JP7046251B2 - Display device - Google Patents

Description

One aspect of the present invention relates to a semiconductor device. One aspect of the invention relates to display devices, display modules, and electronic devices.

Attention has been paid to a technique for forming a transistor (also referred to as a field effect transistor (FET) or a thin film transistor (TFT)) using a semiconductor layer formed on a substrate having an insulating surface. The transistor is widely applied to electronic devices such as integrated circuits (ICs) and image display devices (display devices). A semiconductor material typified by silicon is widely known as a semiconductor layer applicable to a transistor, but a technique using an oxide semiconductor as another material is drawing attention.

For example, a technique for manufacturing a transistor using an amorphous oxide containing In, Zn, Ga, Sn and the like as an oxide semiconductor is disclosed (see Patent Document 1). Further, a technique for manufacturing a transistor having an oxide semiconductor layer having a self-aligned top gate structure is disclosed (see Patent Document 2). Further, in order to increase the field effect mobility, a technique for producing a transistor having a structure that electrically surrounds an oxide semiconductor layer in which a channel is formed by the electric fields of the upper and lower gate electrodes is disclosed (see Patent Document 3).

Further, by using an insulating layer that releases oxygen by heating as the underlying insulating layer of the oxide semiconductor layer forming the channel and reducing the oxygen deficiency of the oxide semiconductor layer, the shift of the threshold voltage in long-term use is small. A technique for manufacturing a transistor having improved electrical reliability is disclosed (see Patent Document 4).

Japanese Unexamined Patent Publication No. 2006-165529 Japanese Unexamined Patent Publication No. 2009-278115 Japanese Unexamined Patent Publication No. 2014-241404 Japanese Unexamined Patent Publication No. 2012-09836

Transistors having an oxide semiconductor layer are expected to be applied to display devices. Capacitance elements that make up the pixel circuit of a display device have a small area and a large capacitance (hereinafter referred to as capacitance).
Is required. When the capacity for holding the data voltage becomes small, charge injection and feedthrough (Feedthrough)
This is to avoid the problem that the influence of gh) becomes large.

A capacitive element in which a thin gate insulating film is sandwiched between a gate electrode and a semiconductor layer to obtain a large capacitance in a small area, a so-called MOS (Metal-Oxide-Semicond).
octor) capacity (or MIS (Metal-Isultor-Semicond)
octor) capacity) is effective. However, the MOS capacity is small when a low voltage near 0 V is held, and it is difficult to hold a low gradation data voltage.

One aspect of the present invention is to provide a display device or the like having a novel configuration capable of obtaining a large capacity even with a small area. Alternatively, one aspect of the present invention is to provide a display device or the like having a new configuration capable of obtaining a large capacity even when a gradation display is performed while maintaining a low voltage.

The problems of one aspect of the present invention are not limited to the problems listed above. The issues listed above do not preclude the existence of other issues. Other issues are issues not mentioned in this item, which are described below. Issues not mentioned in this item can be derived from the description of the description, drawings, etc. by those skilled in the art, and can be appropriately extracted from these descriptions. In addition, one aspect of the present invention solves at least one of the above-listed descriptions and / or other problems.

One aspect of the present invention has a pixel having a first wiring, a first transistor, a first capacitive element, and a light emitting element, and the first wiring is for passing a current through the light emitting element. The first transistor has a function of a current supply line of, a first gate electrode, a first insulating layer on the first gate electrode, an oxide semiconductor layer on the first insulating layer, and the like. A source electrode and a drain electrode on the oxide semiconductor layer, a source electrode and a drain electrode, and a second insulating layer on the oxide semiconductor layer.
It has a second gate electrode on a second insulating layer, and the first capacitive element has a first electrode and a second.
The electrode has an insulating layer provided in the same layer as the second insulating layer between the first electrode and the second electrode, and the first electrode is the same as the second gate electrode. It has a conductive layer provided in the layer, the second electrode has an oxide semiconductor layer provided in the same layer as the oxide semiconductor layer, and the first capacitive element is the same as the first insulating layer. A display having a third electrode layer electrically connected to the first wiring via an insulating layer provided on the layer, the third electrode layer being provided on the same layer as the first gate electrode. It is a device.

In one aspect of the invention, the second gate electrode and the first electrode are oxygen, In, and Z.
A display device having n and M (M is Al, Ga, Y, or Sn) is preferable.

In one aspect of the present invention, the second gate electrode and the first electrode are preferably a display device having a higher carrier density than the oxide semiconductor and the second electrode.

In one aspect of the present invention, a display device in which the film thickness of the second insulating layer is larger than the film thickness of the first insulating layer is preferable.

In one aspect of the present invention, the pixel has a second transistor, a second capacitive element, and a liquid crystal element, and the liquid crystal element has a reflecting electrode provided with an opening and emits light from the light emitting element. The area is
A display device having a region overlapping the region provided with the opening is preferable.

Further, another aspect of the present invention is described in the description and drawings of the embodiments described below.

One aspect of the present invention can provide a display device or the like having a novel configuration capable of obtaining a large capacity even with a small area. Alternatively, one aspect of the present invention can provide a display device having a novel configuration and the like, which can obtain a large capacity even when a gradation display is performed while maintaining a low voltage.

A circuit diagram and a timing chart for explaining the display device of one aspect of the present invention. A cross-sectional view and a graph for explaining the display device of one aspect of the present invention. Top view and sectional view for explaining the display device of one aspect of this invention. A cross-sectional view and a circuit diagram for explaining the display device of one aspect of the present invention. The circuit diagram for demonstrating the display device of one aspect of this invention. The circuit diagram for demonstrating the display device of one aspect of this invention. The top view for demonstrating the display device of one aspect of this invention. The schematic diagram for demonstrating the display device of one aspect of this invention. The sectional view for demonstrating the display device of one aspect of this invention. The circuit diagram for demonstrating the display device of one aspect of this invention. The circuit diagram for demonstrating the display device of one aspect of this invention. A circuit diagram and a schematic cross-sectional view for explaining the display device of one aspect of the present invention. A configuration example of a display device according to an embodiment. A configuration example of a display device according to an embodiment. A configuration example of a display device according to an embodiment. An example of a touch panel configuration according to an embodiment. The figure explaining the manufacturing method of the display device which concerns on embodiment. The figure explaining the manufacturing method of the display device which concerns on embodiment. The figure explaining the manufacturing method of the display device which concerns on embodiment. The figure explaining the manufacturing method of the display device which concerns on embodiment. The figure explaining the manufacturing method of the display device which concerns on embodiment. An electronic device according to an embodiment. An electronic device according to an embodiment. An electronic device according to an embodiment. An electronic device according to an embodiment. An electronic device according to an embodiment.

The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details of the present invention can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to the description of the embodiments shown below.

In the configuration of the invention described below, the same reference numerals are commonly used between different drawings for the same parts or parts having similar functions, and the repeated description thereof will be omitted. Further, when referring to the same function, the hatching pattern may be the same and no particular reference numeral may be added.

In addition, in each figure described in this specification, the size of each structure, the thickness of a layer, or a region is referred to as a region.
May be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

It should be noted that the ordinal numbers such as "first" and "second" in the present specification and the like are added to avoid confusion of the components, and are not limited numerically.

A transistor is a kind of semiconductor element, and can realize amplification of current and voltage, switching operation for controlling conduction or non-conduction, and the like. The transistor in the present specification is an IGBT (Insulated Gate Field Effect Transistor).
(istor) and thin film transistor (TFT: Thin Film Transistor)
)including.

Further, the functions of "source" and "drain" may be interchanged when transistors having different polarities are adopted or when the direction of current changes in circuit operation. Therefore, in the present specification, the terms "source" and "drain" may be used interchangeably.

(Embodiment 1)
In the present embodiment, a configuration example of the display device according to one aspect of the present invention will be described.

[Circuit diagram configuration example]
FIG. 1A is a circuit diagram of pixels included in the display device.

The pixel PIX includes a transistor M1, a transistor M2, a transistor M3, a capacitive element MC, and a light emitting element EL. The pixel PIX is connected to the scanning line GL, the signal line SL, the current supply line anode, the wiring V0, and the common wiring CATHODE. The pixel PIX corresponds to a sub-pixel included in a pixel that performs color display. The transistors M1, M2 and M3
Will be described below as an n-channel type transistor, but may be a p-channel type.

The scanning line GL is a wiring that supplies a scanning signal to the pixels. The scanning signal is a signal that controls the conduction state of the supplied transistor. The signal line SL is a wiring that supplies a data voltage corresponding to the image data to the pixels. The current supply line anode and the common wiring CATHODE are wirings for passing a current through the light emitting element EL. The wiring V0 is a wiring to which a constant voltage is applied.

The capacitive element MC is a capacitive element composed of transistors having gate electrodes above and below the oxide semiconductor layer. The gate electrode made of a metal material under the oxide semiconductor layer of the capacitive element MC is referred to as a first gate electrode (also referred to as a bottom gate electrode). The gate electrode made of the metal oxide material on the upper side of the oxide semiconductor layer is referred to as a second gate electrode (also referred to as a top gate electrode). The metal oxide material is a material having a metal element and oxygen.

The capacitive element MC is a so-called MOS capacitance composed of a second gate electrode, an insulating layer provided in contact with the second electrode, and an oxide semiconductor layer. The second gate electrode, which is one electrode of the capacitive element MC, is connected to the gate electrode of the transistor M3. The source electrode and the drain electrode, which are the other electrodes of the capacitive element MC, are connected to the source electrode of the transistor M3. The first gate electrode is connected to the current supply line anode, in other words the other of the source or drain of the transistor M3.

Although the transistor M1, the transistor M2, and the transistor M3 are shown as a single-gate transistor, they may be a transistor having a structure in which gate electrodes are provided above and below the oxide semiconductor layer, similarly to the capacitive element MC. Configuration examples applicable to the capacitive element MC, the transistors M1, M2, and M3 will be described later.

The gate electrode of the transistor M1 is connected to the scanning line GL. One of the source and drain of the transistor M1 is connected to the signal line SL. The other of the source or drain of the transistor M1 is connected to the gate electrode of the transistor M3 and one electrode of the capacitive element MC.

The gate electrode of the transistor M2 is connected to the scanning line GL. One of the source and drain of the transistor M2 is connected to the wiring V0. The other of the source or drain of the transistor M2 is connected to one of the source or drain of the transistor M3, the other electrode of the capacitive element MC, and one electrode of the light emitting element EL.

The gate electrode of the transistor M3 is the source or drain of the transistor M1.
And is connected to one of the electrodes of the capacitive element MC. One of the source or drain of the transistor M3 is connected to the other of the source or drain of the transistor M2, the other electrode of the capacitive element MC, and one electrode of the light emitting element EL. The other of the source or drain of the transistor M3 is connected to the current supply line anode.

One electrode of the light emitting device EL is connected to the other electrode of the source or drain of the transistor M2, one of the source or drain of the transistor M3, and the other electrode of the capacitive element MC. The other electrode of the light emitting element EL is connected to the common wiring Cathode.

FIG. 1B shows a timing chart for explaining the simple operation of FIG. 1A. FIG. 1B illustrates the one-scan selection period (PSCAN) at the scan line _{GL_m} on the m-th row. Further, the voltage V _ANODE applied to the current supply line ANODE, the voltage of the wiring V0, and the image signal of the signal line SL are illustrated.

As shown in FIG. 1 (B), the image signal of the signal line SL is (m-1) in one scan selection period.
The signal DATA_m-1 on the line is switched to the signal DATA_m on the mth line. During this time, the voltage V _ANODE applied to the current supply line anode is the wiring V because the current flows through the light emitting element EL.
The voltage is higher than the voltage of O.

In the configurations of FIGS. 1A and 1B, the first gate electrode is formed of a conductive layer made of a metal material, and the second gate electrode is formed of a conductive layer made of a metal oxide material. can. The conductive layer made of a metal oxide material can supply oxygen to the insulating layer which is the surface to be filmed at the time of film formation. The insulating layer to which oxygen is supplied can be released to the semiconductor layer having an oxide semiconductor by heating. Therefore, by adopting a conductive layer made of a metal oxide material for the second gate electrode, the reliability of the transistors M1, M2, and M3 can be improved.

In the configurations of FIGS. 1A and 1B, the shift of the threshold voltage is reduced by reducing the reliability of the transistors M1, M2, and M3, that is, the oxygen deficiency of the semiconductor layer having the oxide semiconductor, as described above. be able to. On the other hand, when the transistor functions as a MOS capacitance, if the threshold voltage of the transistor is close to 0V, the capacitance is small when the low voltage is maintained, and it becomes difficult to hold the low gradation data voltage.

In FIG. 2A, the voltages of the first gate electrode, the second gate electrode, and the electrodes functioning as the source and drain of the transistor to function as the MOS capacitance shown in the circuit diagram are shown as “Vb” and “Vg”, respectively. , "Vs". FIG. 2B shows a capacitive element MC having a MOS capacitance with the voltage “Vg—Vs” between the second gate electrode and the source electrode as the horizontal axis.
It is a graph with the capacity of.

As shown in FIG. 2 (B), a transistor having a transistor threshold voltage near 0 V is M.
In the case of OS capacity, when Vb given to the first gate electrode and Vb given to the source electrode are equipotential (Vb-Vs = 0), when a low voltage is applied to the second gate electrode, the holding capacity is small. ..

On the other hand, as shown in FIG. 2B, even when a transistor having a transistor threshold voltage near 0V has a MOS capacitance, Vb given to the first gate electrode is larger than Vb given to the source electrode. When this is done (Vb-Vs> 0), the threshold voltage of the transistor can be negatively shifted. Specifically, as shown in FIGS. 1A and 1B, the wiring VO
The voltage V _ANODE applied to the current supply line ANODE, which is higher than the voltage of ANODE, is made to function as Vb applied to the first gate electrode. Therefore, even when a low voltage is applied to the second gate electrode, the holding capacity can be increased.

Further, in the configurations of FIGS. 1A and 1B, the insulating layer between the second gate electrode and the oxide semiconductor layer releases oxygen by heating to reduce the oxygen deficiency of the oxide semiconductor layer. Therefore, the film thickness is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer. Therefore, the capacitive element MC can have a large capacitance in a small area.

Although the transistors M1, M2, and M3 have been described as a single gate structure in FIG. 1 (A), they have a first gate electrode and a second gate electrode like the pixel PIX_A shown in FIG. 3 (A). , The gate electrodes may be connected to each other. In the case of this configuration, the transistors M1, M2 and M3 are transistors having a structure in which gate electrodes are provided above and below the oxide semiconductor layer, similarly to the capacitive element MC.

In FIG. 1A, the first gate electrode of the capacitive element MC is connected to the current supply line anode, but any wiring that can provide a voltage capable of negatively shifting the threshold voltage of the transistor is used. The configuration may be. For example, as in the pixel PIX_B shown in FIG. 3B, the first gate electrode may be connected to a wiring V1 different from the current supply line anode. It is preferable to apply a voltage higher to the wiring V1 than the voltage applied to the wiring V0, similarly to the current supply line anode.

In FIG. 2A, the transistors M1, M2, and M3 are configured to connect two gate electrodes, but the first gate electrode and the second gate electrode may be configured to give different signals. For example, as in the pixel PIX_C shown in FIG. 4A, the first gate electrode of the transistors M1 and M2 may be connected to the scanning line GL, and the second gate electrode may be connected to the wiring V0. With this configuration, in the transistors M1 and M2, the first
The scanning line GL made of a metal material can be arranged on the same layer as the gate electrode of the above. Therefore, even if the configuration in which the first gate electrode is formed of a conductive layer made of a metal material and the second gate electrode is formed of a conductive layer made of a metal oxide material is adopted, the scanning line GL is adopted. It is possible to avoid the problem that the resistance of the metal becomes high. Further, in order to reduce the resistance of the scanning line GL, it is possible to reduce the manufacturing cost by providing an extra wiring made of a metal material.

Although FIG. 2A shows a configuration in which the current supply line anode is arranged in a direction parallel to the signal line SL and the wiring V0, other configurations may be used. For example, the pixel PI shown in FIG. 4 (B).
As in the case of X_D, the current supply line anode may be arranged in a direction parallel to the scanning line GL.

[Transistor configuration example]
Here, a configuration example of a transistor or MOS capacitance applicable to the transistors M1, M2, M3, and the capacitive element MC will be described with reference to FIGS. 5A, 5B, and 5C.

FIGS. 5A, 5B, and 5C show an example of a semiconductor device having a transistor. Note that FIG. 5
The transistors shown in (A), (B) and (C) have a structure in which gate electrodes are provided above and below the semiconductor layer.

5 (A) is a top view of the transistor 100, FIG. 5 (B) is a cross-sectional view between the alternate long and short dash lines X1-X2 of FIG. 5 (A), and FIG. 5 (C) is FIG. 5 (A). It is sectional drawing between one-dot chain line Y1-Y2. In FIG. 5A, components such as the insulating layer 110 are omitted for clarity. In addition, in the top view of the transistor, FIG. 5 (
Similar to A), some of the components may be omitted in the illustration. Also, alternate long and short dash line X1-X
The two directions may be referred to as the channel length (L) direction, and the alternate long and short dash line Y1-Y2 direction may be referred to as the channel width (W) direction.

The transistors 100 shown in FIGS. 5A, 5B and C have a conductive layer 106 formed on the substrate 102, an insulating layer 104 on the conductive layer 106, and an oxide semiconductor layer 108 on the insulating layer 104.
The insulating layer 110 on the oxide semiconductor layer 108, the metal oxide layer 112 on the insulating layer 110, the insulating layer 104, the oxide semiconductor layer 108, and the insulating layer 116 on the metal oxide layer 112.
Have. Further, the oxide semiconductor layer 108 has a channel region 108i in contact with the insulating layer 110.
And the source region 108s in contact with the insulating layer 116 and the drain region 1 in contact with the insulating layer 116.
It has 08d and.

Further, the transistor 100 is connected to the conductive layer 120a electrically connected to the source region 108s via the opening 141a provided in the insulating layer 116, and the drain region 108d via the opening 141b provided in the insulating layer 116. May have a conductive layer 120b, which is electrically connected to the.

The conductive layer 106 has a function as a first gate electrode and is made of a metal material. The metal oxide layer 112 has a function as a second gate electrode and is made of a metal oxide material. Further, the insulating layer 104 has a function as a first gate insulating layer, and the insulating layer 110 has a function as a first gate insulating layer.
Has a function as a second gate insulating layer.

Further, the insulating layer 116 has either one or both of nitrogen and hydrogen. Insulation layer 1
By configuring 16 to have either or both of nitrogen and hydrogen, either one or both of nitrogen and hydrogen can be supplied to the oxide semiconductor layer 108 and the metal oxide layer 112.

Examples of the insulating layer 116 include a nitride insulating layer. The nitride insulating layer can be formed by using silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride or the like. The hydrogen concentration contained in the insulating layer 116 is 1 × 10 ²² atoms.
It is preferably / cm ³ or more.

Further, the metal oxide layer 112 has a function of supplying oxygen to the insulating layer 110. Since the metal oxide layer 112 has a function of supplying oxygen to the insulating layer 110, it is possible to include excess oxygen in the insulating layer 110. When the insulating layer 110 has an excess oxygen region, the excess oxygen can be supplied into the oxide semiconductor layer 108, more specifically, the channel region 108i. Therefore, it is possible to provide a highly reliable semiconductor device.

As the insulating layer 110, an oxide insulating layer or a nitride insulating layer can be formed as a single layer or laminated. As the insulating layer 110, for example, silicon oxide, silicon nitriding, silicon nitride, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide or G.
A—Zn oxide or the like may be used, and it can be provided in a single layer or in a laminated manner.

By configuring the insulating layer 110 formed above the oxide semiconductor layer 108 to have excess oxygen, it is possible to selectively supply excess oxygen only to the channel region 108i.
Alternatively, after supplying excess oxygen to the channel region 108i, the source region 108s, and the drain region 108d, the carrier densities of the source region 108s and the drain region 108d may be selectively increased.

The metal oxide layer 112 is supplied with either or both of nitrogen and hydrogen from the insulating layer 116, so that the carrier density is increased. In other words, the metal oxide layer 112 also has a function as an oxide conductor (OC). Therefore, the metal oxide layer 112 has a higher carrier density than the oxide semiconductor layer 108.

The source region 108s and the drain region 108d of the oxide semiconductor layer 108, and the metal oxide layer 112 may each have an element forming an oxygen deficiency. Typical examples of the element forming the oxygen deficiency include hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, and noble gas. Helium is a typical example of a rare gas element.
There are neon, argon, krypton, xenon and the like.

When the impurity element is added to the oxide semiconductor layer, the bond between the metal element and oxygen in the oxide semiconductor layer is broken, and an oxygen deficiency is formed. Alternatively, when the impurity element is added to the oxide semiconductor layer, the oxygen bonded to the metal element in the oxide semiconductor layer is bonded to the impurity element, oxygen is desorbed from the metal element, and an oxygen deficiency is formed. To. As a result, the carrier density increases in the oxide semiconductor layer and the conductivity becomes high.

In the transistor 100, it is preferable that the side end portion of the insulating layer 110 and the side end portion of the metal oxide layer 112 have a aligned region. In other words, in the transistor 100, the upper end portion of the insulating layer 110 and the lower end portion of the metal oxide layer 112 are substantially aligned. For example, the above structure can be obtained by processing the insulating layer 110 using the metal oxide layer 112 as a mask.

The oxide semiconductor layer 108 and the metal oxide layer 112 are made of In—M—Zn oxide (M is Al,
It is formed of an oxide semiconductor such as Ga, Y, or Sn). Further, In—Ga oxide and In—Zn oxide may be used as the oxide semiconductor layer 108 and the metal oxide layer 112. In particular, when the oxide semiconductor layer 108 and the metal oxide layer 112 are formed of an oxide semiconductor made of the same constituent elements, it is preferable because the manufacturing cost can be reduced.

When the oxide semiconductor layer 108 and the metal oxide layer 112 are In—M—Zn oxides, In
The atomic number ratio of the metal element of the sputtering target used for forming the —M—Zn oxide preferably satisfies In ≧ M and Zn ≧ M. In: M: Zn = 1: 1: 1 and In: M: Zn = 1: 1 as the atomic number ratio of the metal element of such a sputtering target.
: 1.2, In: M: Zn = 2: 1: 1.5, In: M: Zn = 2: 1: 2.3, In:
M: Zn = 2: 1: 3, In: M: Zn = 3: 1: 2, In: M: Zn = 4: 2: 4.1
, In: M: Zn = 5: 1: 7 and the like are preferable. The oxide semiconductor layer 108, which is formed into a film,
The atomic number ratio of the metal oxide layer 112 and the metal oxide layer 112 may fluctuate by about plus or minus 40% of the atomic number ratio of the metal element contained in the sputtering target. For example, when the atomic number ratio of In: Ga: Zn = 4: 2: 4.1 is used as the sputtering target, the atomic number ratio of the oxide semiconductor layer to be formed is In: Ga: Zn = 4: 2. : May be near 3.

By using an oxide semiconductor layer having a low impurity concentration and a low defect level density as the channel region 108i, a transistor having further excellent electrical characteristics can be manufactured.
Here, a low impurity concentration and a low defect level density (less oxygen deficiency) is referred to as high-purity intrinsic or substantially high-purity intrinsic. Alternatively, it is called true or substantially true. Oxide semiconductors with high-purity intrinsics or substantially high-purity intrinsics have few carrier sources, and therefore
It may be possible to reduce the carrier density. Therefore, the transistor in which the channel region is formed in the oxide semiconductor layer tends to have an electric characteristic (also referred to as a normally-off characteristic) in which the threshold voltage is positive. Further, since the oxide semiconductor layer having high purity intrinsicity or substantially high purity intrinsicity has a low defect level density, the trap level density may also be low.
Further, the oxide semiconductor layer having high-purity intrinsicity or substantially high-purity intrinsicity can obtain the property that the off-current is remarkably small. Therefore, a transistor in which a channel region is formed in the oxide semiconductor layer may be a highly reliable transistor with small fluctuations in electrical characteristics.

On the other hand, the source region 108s, the drain region 108d, and the metal oxide layer 112 are in contact with the insulating layer 116. Source region 108s, drain region 108d, and metal oxide layer 1
When the 12 is in contact with the insulating layer 116, hydrogen and / or nitrogen are added from the insulating layer 116 to the source region 108s, the drain region 108d, and the metal oxide layer 112, so that the carrier density is increased.

The carrier density of the oxide semiconductor layer will be described below.

Factors that affect the carrier density of the oxide semiconductor layer include oxygen deficiency (Vo) in the oxide semiconductor layer, impurities in the oxide semiconductor layer, and the like.

When the oxygen deficiency in the oxide semiconductor layer increases, hydrogen is bonded to the _oxygen deficiency (this state is called VO).
(Also referred to as H), the defect level density becomes high. Alternatively, when the amount of impurities in the oxide semiconductor layer increases, the defect level density increases due to the impurities. Therefore, the carrier density of the oxide semiconductor layer can be controlled by controlling the defect level density in the oxide semiconductor layer.

As shown in FIG. 5C, the oxide semiconductor layer 108 faces each of the conductive layer 106 functioning as the first gate electrode and the metal oxide layer 112 functioning as the second gate electrode. It is located and sandwiched between a conductive layer or an oxide semiconductor layer that functions as two gate electrodes.

With the configuration of FIG. 5C, when the transistor 100 functions as a transistor, the oxide semiconductor layer 108 included in the transistor 100 is used as an electric field due to the scanning signal of the conductive layer 106 that functions as the first gate electrode. , And an electric field with a constant voltage of the metal oxide layer 112 that functions as a second gate electrode, can be electrically surrounded.

Although not shown in FIG. 5C, the transistor 100 has openings provided in the insulating layer 110 and the insulating layer 104 for connecting the first gate electrode and the second gate electrode. It may be configured. By having such a configuration, the oxide semiconductor layer 108 contained in the transistor 100 is used as a first gate electrode, a conductive layer 106, and a second.
The metal oxide layer 112, which functions as a gate electrode of the above, can be electrically surrounded by the electric fields of both.

Further, by the configuration of FIG. 5C, when the transistor 100 functions as a MOS capacitance, a voltage for negatively shifting the threshold voltage of the transistor can be applied to the conductive layer 106 functioning as the first gate electrode. .. The MOS capacity can be composed of an oxide semiconductor layer 108, an insulating layer 110, and a metal oxide layer 112 that functions as a second gate electrode.

When the transistor 100 functions as a MOS capacitance, the capacitance can be formed by the oxide semiconductor layer 108, the insulating layer 110, and the metal oxide layer 112 shown in the cross-sectional view of FIG. 6A. That is, it is possible to form a MOS capacitance corresponding to the capacitive element MC in the circuit diagram of FIG. 5 (B). In addition, in FIG. 6A and FIG. 6B, “Vg”, “Vs”, “V”
“B” represents the corresponding voltage in the circuit diagram and the cross-sectional view, as in FIG. 2 (A).

In the configurations of FIGS. 6A and 6B, a voltage that negatively shifts the threshold voltage of the transistor is applied as the voltage Vg applied to the conductive layer 106. Insulation layer 110 constituting the MOS capacity
The film thickness of 110t is smaller than the film thickness of the insulating layer 104, 104t. Therefore, a small voltage is applied to the metal oxide layer 112, and even when a capacity is formed between the metal oxide layer 112 and the metal oxide layer 112 with the insulating layer 110 in between, a high capacity can be secured and a small area can be secured. It can be a large capacity.

[Structure example of top view]
Next, FIG. 7 shows an example of a top view applicable to the circuit configuration of the pixel PIX_D of FIG. 4B, excluding the configuration of the light emitting element and the like. Further, FIG. 8 shows a state in which the conductive layer, the semiconductor layer, and the like which are vertically related in the top view of FIG. 7 are divided into layers and connected through an opening.
9A is a cross-sectional view taken along the dotted line P1-P2 of FIG. 7, and FIG. 9B is a cross-sectional view taken along the dotted line Q1-Q2 of FIG. Further, FIG. 10 is a circuit diagram in which a plurality of pixels corresponding to the arrangement of the transistors in the top view of FIG. 7 are arranged side by side.

In the top view of FIG. 7, the scanning line GL, the signal line SL, the wiring V0, and the current supply line anode are shown.
, Transistor M1, transistor M2, transistor M3, capacitive element MC,
Is illustrated. In the layer structure of the conductive layer, the metal oxide layer, and the oxide semiconductor layer, the insulating layer and the like are not shown.

The layer structure of the conductive layer, the metal oxide layer, and the oxide semiconductor layer constituting each wiring or the like in FIG. 7 is understood from FIGS. 8 and 9. A conductive layer 151, a conductive layer 152, and a conductive layer 153 that function as a first gate electrode are provided on the substrate SUB. Next, the oxide semiconductor layer 161 and the oxide semiconductor layer 162 are provided via the insulating layer 154 that functions as the first gate insulating layer. Next, the insulating layer 163 that functions as the second gate insulating layer.
A metal oxide layer 171, a metal oxide layer 172, and a metal oxide layer 173 that function as a second gate electrode are provided. Next, the carrier densities in a part of the oxide semiconductor layer 161 and a part of the oxide semiconductor layer 162, and the metal oxide layer 171 and the metal oxide layer 172 and the metal oxide layer 173 are selectively increased to be conductive. A conductive layer 181, a conductive layer 182, a conductive layer 183, a conductive layer 184, and a conductive layer 185 that function as source electrodes, drain electrodes, or various wirings of a transistor are provided via an insulating layer 174. Next, the insulating layer 186, the insulating layer 187, and the insulating layer 18 functioning as the interlayer insulating layer
8 is provided. Further, the insulating layer 186, the insulating layer 187 and the insulating layer 188 have a conductive layer 1
There is an opening 190 that reaches 85. The opening 190 is an opening for forming a pixel electrode and connecting to a light emitting element provided on the pixel electrode.

Further, in FIGS. 7 and 8, the structure in which the squares are marked with a cross represents an opening formed in the insulating layer. The openings connect the conductive layer, the metal oxide layer, and the oxide semiconductor layer of each layer as indicated by the arrows in FIG. Further, in FIG. 8, the conductive layer 151 serving as the scanning line GL and the current supply line A are shown.
Conductive layer 152 as a node, conductive layer 181 as a wiring V0, conductive layer 1 as a signal line SL
82 is illustrated.

As can be seen from the figures of FIGS. 7, 8 and 9, the transistors M1, M2 and M3 are configured to connect the first gate electrode and the second gate electrode. With this configuration, the amount of current flowing through the transistor can be increased as compared with the case where the gate electrodes are not connected to each other.

Further, as can be seen from the figures of FIGS. 7, 8 and 9, the current supply line anode is below the metal oxide layer 171, the insulating layer 163, and the oxide semiconductor layer 161 forming the capacitive element MC.
The conductive layer 152 connected to the above is arranged. In this configuration, the voltage of the current supply line anode applied to the conductive layer 152 negatively shifts the threshold voltage of the transistor, and the film thickness of the insulating layer 163 is smaller than the film thickness of the insulating layer 154, so that a high capacity can be secured. Therefore, it is possible to have a large capacity in a small area.

The conductive layer 152 connected to the current supply line anode and the conductive layer 151 serving as the scanning line GL.
Has a function as a light-shielding layer by being composed of a metal material having light-shielding property and conductivity. Therefore, fluctuations in the MOS capacity and the electrical characteristics of the transistor can be reduced.

Further, FIG. 10 shows a circuit diagram corresponding to the top view of the pixels described with reference to FIG. 7 with 2 × 2 pixels PIX_.
It is a circuit diagram illustrated as UL, pixel PIX_UR, pixel PIX_LL and pixel PIX_LR. In FIG. 10, pixels arranged in rows m, rows (m + 1), columns n, and columns (n + 1) are illustrated. In FIG. 10, the scanning line GL_m in the m-th row, the scanning line GL_m + 1 in the (m + 1) row, the signal line SL_n in the n-th column, the signal line SL_n + 1 in the (n + 1) column, the wiring V0, and the current supply. The line ANODE is illustrated.

As shown in FIG. 10, the pixel PIX_UL and the pixel PIX_UR are configured such that the transistors M1, M2, M3 and the capacitive element MC constituting the pixel with the wiring V0 interposed therebetween are arranged line-symmetrically and connected to the same wiring V0. .. Similarly, the pixel PIX_LL and the pixel PIX_LR also include the transistors M1, M2, M3 and the capacitive element MC that constitute the pixel with the wiring V0 interposed therebetween.
Are arranged line-symmetrically and connected to the same wiring V0.

Further, as shown in FIG. 10, the pixels PIX_UL and the pixels PIX_LL are the transistors M1, M2, M3 and the capacitive element MC that constitute the pixels with the current supply line anode sandwiched between them.
Are arranged line-symmetrically and connected to the same current supply line anode. Also pixel PIX_
Similarly, in the UR and the pixel PIX_LR, the transistors M1, M2, M3 and the capacitive element MC constituting the pixel are arranged line-symmetrically with the current supply line anode sandwiched between them, and the same current supply line AN is used.
It is configured to connect to ODE.

By arranging the elements and wirings shown in FIG. 10, the number of wirings and the like arranged between the pixels for connecting to each pixel can be reduced. The configuration of FIG. 10 is preferable because the area of the pixels can be reduced by the amount that the number of wirings and the like is reduced when the design is made to increase the definition of the pixels.

[Modification example]
The circuit configuration applicable to one aspect of the present invention is the transistors M1 and M2 of FIG. 1 (A).
And it is not limited to the pixel configuration having M3. For example, as shown in FIG. 11A, a pixel configuration having two or less transistors is also applicable.

The pixel configuration of the pixel PIX_E shown in FIG. 11A includes a transistor M1, a transistor M3, a capacitive element MC, and a light emitting element EL. That is, it corresponds to the circuit configuration in which the transistor M2 in FIG. 1A is omitted.

Also in the configuration shown in FIG. 11A, the voltage of the current supply line anode is applied to the first gate electrode in the capacitive element MC in which the transistor functions as a MOS capacitance. Then, when a voltage for negatively shifting the threshold voltage of the transistor is applied and a low voltage is applied in the MOS capacity composed of the metal oxide layer which is the second gate electrode, the insulating layer, and the oxide semiconductor layer. The capacity of the can be increased. The insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer, and a high capacity can be secured, so that the area is small. It can be a large capacity.

The circuit configuration applicable to one aspect of the present invention is not limited to the pixel configuration of FIG. 11A.
For example, as shown in FIG. 11B, a pixel configuration having four or more transistors can also be applied.

The pixel configuration of the pixel PIX_F shown in FIG. 11A includes a transistor M1, a transistor M2, a transistor M3, a transistor M4, a transistor M5, and a capacitive element MC.
And a light emitting element EL. Further, the pixel configuration includes a signal line SL and a current supply line anode.
It is operated by scanning lines GL1, GL2 and GL3 in addition to E, wiring V0 and common wiring cathode.

Also in the configuration shown in FIG. 11B, in the capacitive element MC in which the transistor functions as a MOS capacitance, the voltage of the current supply line anode is applied to the first gate electrode. Then, when a voltage for negatively shifting the threshold voltage of the transistor is applied and a low voltage is applied in the MOS capacity composed of the metal oxide layer which is the second gate electrode, the insulating layer, and the oxide semiconductor layer. The capacity of the can be increased. The insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer, and a high capacity can be secured, so that the area is small. It can be a large capacity.

Further, the circuit configuration applicable to one aspect of the present invention is not limited to the pixel configuration having a light emitting element, and can also be applied to a pixel having a liquid crystal element and a light emitting element.

The pixel configuration of the pixel PIX_G shown in FIG. 12A, which is illustrated as an example, includes a transistor M1, a transistor M2, a transistor M3, a capacitive element MC, a transistor M6, a capacitive element MC1, and a liquid crystal element LC. Have. Further, the pixel configuration is the signal line SL_LC,
Signal line SL_EL, current supply line anode, wiring V0, scanning line GL_EL, scanning line GL_
It operates by LC and common wiring cathode.

In the pixel PIX_G, the video signal given to the gate electrode of the transistor M3 is given from the signal line SL_EL by controlling the scanning signal given to the scanning line GL_EL. Pixel P
In IX_G, the video signal given to one electrode of the liquid crystal element LC is the scanning line GL_LC.
It is given from the signal line SL_LC by the control of the scanning signal given to. That is, pixel PIX
The gradation display of the liquid crystal element LC and the light emitting element EL can be controlled separately for each _G.
In such a configuration, unlike the control of the backlight that lights uniformly by a plurality of pixels, the light emission of the light emitting element EL according to the image to be displayed can be controlled in the smallest unit such as the pixel level, which is extra. The light emission can be suppressed. Therefore, the display device having the pixel PIX_G can reduce the power consumption.

Further, in the configuration of the pixel PIX_G, the intensity of the reflected light using the external light can be adjusted by the liquid crystal layer by the reflective electrode of the liquid crystal element LC to display the gradation. Therefore pixel PIX_
The display device having G can improve the visibility outdoors.

Further, in the configuration of the pixel PIX_G, the intensity of the light emitted by the light emitting element EL is adjusted to display the gradation. Therefore, the display device having the pixel PIX_G can improve the visibility indoors where the intensity of the outside light is small.

The configuration for controlling and displaying the liquid crystal element LC outdoors or the configuration for controlling and displaying the light emitting element EL indoors may be such that the display device is provided with a sensor capable of measuring the illuminance.

Further, also in the configuration shown in FIG. 12A, the voltage of the current supply line anode is applied to the first gate electrode in the capacitive elements MC and MC1 in which the transistor functions as a MOS capacitance. Then, when a voltage for negatively shifting the threshold voltage of the transistor is applied and a low voltage is applied in the MOS capacity composed of the metal oxide layer which is the second gate electrode, the insulating layer, and the oxide semiconductor layer. The capacity of the can be increased. The insulating layer between the second gate electrode and the oxide semiconductor layer is thinner than the insulating layer between the first gate electrode and the oxide semiconductor layer, and a high capacity can be secured, so that the area is small. It can be a large capacity.

The display device having the pixel PIX_G shown in FIG. 12A can be provided with the light emitting element EL and the liquid crystal element LC overlapped with each other as shown in the schematic cross-sectional view shown in FIG. 12B. In FIG. 12B, a layer 191 having a transistor is provided between the light emitting element EL and the liquid crystal element LC. The layer 191 having a transistor includes a transistor M1, a transistor M2, a transistor M3, a capacitive element MC, a transistor M6, and a capacitive element MC1. The liquid crystal element LC of FIG. 12B is an electrode 1 capable of reflecting external light (L _REF ).
Has 92. The electrode 192 has an opening 193 for transmitting light (L _EL ) from the light emitting element.
Is provided.

In a display device in which the schematic cross-sectional view shown in FIG. 12B is applied to the pixel PIX_G described with reference to FIG. 12A, it is effective to switch between the light emitting element EL and the liquid crystal element LC according to the illuminance. be. For example, when the illuminance is high, the liquid crystal element LC is driven to obtain a desired gradation, and when the illuminance is low, the light emitting element EL is driven to obtain a desired gradation. With this configuration, it is possible to obtain a display device having low power consumption and excellent visibility.

This embodiment can be carried out in combination with at least a part thereof as appropriate in combination with other embodiments described in the present specification.

(Embodiment 2)
In the present embodiment, an example of cross-sectional configuration of the display device according to one aspect of the present invention will be described.

[Display device configuration example]
FIG. 13 shows a schematic top view of the display device 10 described below. The display device 10 includes a pixel unit 11, a scanning line drive circuit 12, a signal line drive circuit 13, a terminal unit 15, a plurality of wirings 16a, a plurality of wirings 16b, and the like.

[Cross-section configuration example 1]
FIG. 14 is a schematic cross-sectional view of the display device 10. FIG. 14 shows, for example, the cutting line A1 in FIG.
-Corresponds to the cross section along A2.

The display device 10 has a configuration in which the first substrate 201 and the second substrate 202 are bonded to each other by an adhesive layer 220.

On the first substrate 201, a terminal portion 15, wiring 16b, a transistor 252 constituting a signal line drive circuit 13, a transistor 251 constituting a pixel portion 11, a transistor 252, a capacitance element 253, a light emitting element 254, and the like are provided. ing. Further, on the first substrate 201, an insulating layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, a spacer 215 and the like are provided.

On the first substrate 201 side of the second substrate 202, an insulating layer 221, a light shielding layer 231 and a colored layer 2 are provided.
32, structure 230a, structure 230b and the like are provided.

A light emitting element 254 is provided on the insulating layer 213. The light emitting element 254 has a pixel electrode 225, an EL layer 222, and a second electrode 223 that function as a first electrode. Further, an optical adjustment layer 224 is provided between the pixel electrode 225 and the EL layer 222. Insulation layer 214
Is provided so as to cover the ends of the pixel electrode 225 and the optical adjustment layer 224.

The transistor 251 is a transistor that functions as the transistor M1 or M2 described in FIG. 1 (A) of the first embodiment. The transistor 252 is the embodiment 1 described above.
It is a transistor functioning as the transistor M3 described with reference to FIG. 1 (A).

Transistors 251, 252, 255 have a conductive layer 2 that functions as a first gate electrode.
75 and a conductive layer 272 that functions as a second gate electrode are provided. That is, the semiconductor in which the channel is formed is sandwiched between the two gate electrodes. Conductive layer 275
Corresponds to the conductive layer 106 that functions as the first gate electrode described in FIG. 2 of the first embodiment. The conductive layer 272 corresponds to the metal oxide layer 112 that functions as the second gate electrode described in FIG. 2 of the first embodiment.

By using the conductive layer 275 as an electrode capable of repairing the oxygen deficiency of the semiconductor layer 271 by releasing oxygen, it is possible to stabilize the electrical characteristics of the transistor.

Further, in a transistor connected to a light emitting element such as a transistor 252, it is preferable to electrically connect two gate electrodes to give the same signal to them. Such a transistor can increase the field effect mobility as compared with other transistors, and can increase the on-current. As a result, it is possible to manufacture a circuit capable of high-speed operation.

The capacitive element 253 is composed of a part of the conductive layer 275, a part of the insulating layer 211, and a part of the semiconductor layer 271, but as shown in FIG. 14, a part of the conductive layer 274 and an insulating layer. It may be composed of a part of 217 and a part of the conductive layer 273.

FIG. 14 shows an example in which the light emitting element 254 is a light emitting element having a top emission structure. The light emitted from the light emitting element 254 is emitted to the second substrate 202 side. With such a configuration, a transistor, a capacitive element, and a transistor, a capacitive element, can be placed on the lower side (first substrate 201 side) of the light emitting element 254.
Since the circuit, wiring, and the like can be arranged, the aperture ratio of the pixel portion 11 can be increased.

On the surface of the second substrate 202 on the first substrate 201 side, the colored layer 23 overlapping the light emitting element 254 is formed.
2 is provided. Further, a light-shielding layer 231 may be provided in a portion where the colored layer 232 is not provided. As shown in FIG. 14, the light-shielding layer 231 may be provided at a position overlapping with the signal line drive circuit 13. Further, a translucent overcoat layer may be provided so as to cover the colored layer 232 and the light-shielding layer 231.

Further, on the side of the first substrate 201 of the second substrate 202, the structure 230a is provided in the region inside the adhesive layer 220, and the structure 230b is provided in the region outside the adhesive layer 220. .. The structure 230a and the structure 230b have a function of suppressing the progress of cracks in the insulating layer 221 and the second substrate 202 at the ends of the second substrate 202. FIG. 14 shows an example in which the structure 230a and the structure 230b have a laminated structure of a layer made of the same film as the light-shielding layer 231 and a layer made of the same film as the colored layer 232a. By forming a laminated structure of two or more layers in this way, the effect of suppressing the progress of cracks can be further enhanced. Here, the structure 230 is sandwiched between the adhesive layer 220 and the structure 230 on both sides.
Although the configuration for arranging a and the structure 230b is shown, either one may be suitable. Further, when there is no possibility of cracking (for example, when the rigidity of the second substrate 202 or the like is high), the structure 230a and the structure 230b may not be provided.

The spacer 215 is provided on the insulating layer 214. The spacer 215 has a function as a gap spacer that controls the distance between the first substrate 201 and the second substrate 202 so as not to be shortened more than necessary. The angle between a part of the side surface of the spacer 215 and the surface to be formed is preferably 45 degrees or more and 120 degrees or less, more preferably 60 degrees or more and 100 degrees or less, and further preferably 75 degrees or more and 90 degrees or less. It is preferable to have a portion that is. By doing so, it becomes easy to form a region where the thickness of the EL layer 222 is thin on the side surface of the spacer 215. Therefore, it is possible to suppress the phenomenon of issuance due to the current flowing through the EL layer 222 between the adjacent light emitting elements. In particular, when the pixel portion 11 has high definition, the distance between adjacent light emitting elements becomes small, so it is effective to provide the spacer 215 having such a shape between the light emitting elements. Further, it is particularly effective when the EL layer 222 has a layer containing a highly conductive material.

Further, the spacer 215 has a function as a mask gapper to prevent the formed surface from being scratched by the shielding mask when a shielding mask is used when forming the EL layer 222, the second electrode 223, or the like. You may.

The spacer 215 is preferably provided so as to overlap with the wiring intersecting the scanning line.

FIG. 14 shows an example of the display device 10 using the color filter method. For example, as the colored layer 232, one color may be expressed by sub-pixels of three colors to which any one of red (R), green (G), and blue (B) is applied. In addition to this, white (W)
It is preferable to apply a sub-pixel of yellow (Y) or yellow (Y) because the color reproducibility can be improved and the power consumption can be reduced.

In the light emitting element 254, light having high color purity can be taken out from the display device 10 by the combination of the microcavity structure by the coloring layer 232 and the optical adjustment layer 224.
The thickness of the optical adjustment layer 224 may be different depending on the color of each sub-pixel. Further, depending on the sub-pixel, a configuration having no optical adjustment layer may be used.

Further, it is preferable to apply an EL layer that emits white light as the EL layer 222 included in the light emitting element 254. By applying such a light emitting element 254, the EL layer 222 is applied to each sub-pixel.
Since it is not necessary to paint the pixels separately, it is possible to reduce the cost and improve the yield, and it is easy to improve the definition of the pixel unit 11. Further, by providing optical adjustment layers having different thicknesses to each sub-pixel, the EL layer 222 may be painted separately for each sub-pixel, in which case either the optical adjustment layer or the colored layer may be applied. , Or both may not be provided. Further, at this time, at least the light emitting layer of the EL layer 222 may be formed separately in each sub-pixel, and the other layers may be formed without being painted separately.

FIG. 14 shows an example in which an FPC 242 electrically connected to the terminal portion 15 is provided. Therefore, the display device 10 shown in FIG. 14 can also be called a display module.
Further, a display device in a state where an FPC or the like is not provided can also be called a display panel.

The terminal portion 15 is electrically connected to the FPC 242 via the connection layer 243.

In FIG. 14, the terminal portion 15 shows a structure having a laminated structure of a wiring 16b and a conductive layer made of the same conductive film as the pixel electrode 225. As described above, it is preferable that the terminal portion 15 is configured by laminating a plurality of conductive layers because not only the electric resistance can be reduced but also the mechanical strength can be increased.

For the insulating layer 211 and the insulating layer 221, it is preferable to use a material in which impurities such as water and hydrogen are difficult to diffuse. That is, the insulating layer 211 and the insulating layer 221 can function as barrier membranes. With such a configuration, even if a moisture-permeable material is used for the first substrate 201 and the second substrate 202, impurities can be prevented from entering the light emitting element 254 and the like and the transistor and the like from the outside. It is possible to effectively suppress it, and a highly reliable display device can be realized.

FIG. 14 shows a case where a hollow sealing structure having a space 250 between the first substrate 201 and the second substrate 202 is provided. For example, the space 250 may be filled with an inert gas such as nitrogen or a noble gas. Further, the space 250 may be filled with a liquid crystal material or a fluid material such as oil. Alternatively, the space 250 may be depressurized. The sealing method is not limited to this, and solid sealing filled with a resin or the like may be used.

[Cross-section configuration example 2]
FIG. 15 shows a configuration example of a display device suitable for use when the pixel unit 11 and the signal line drive circuit 13 are bent.

The display device 10 shown in FIG. 15 shows an example in which the first substrate 201 and the second substrate 202 have a solid encapsulation structure bonded by the encapsulant 260.

Further, an adhesive layer 261 is provided on the first substrate 201, an insulating layer 216 is provided on the adhesive layer 261, and a transistor, a light emitting element, or the like is provided on the insulating layer 216. The insulating layer 216 is the insulating layer 2.
Similar to 21, it is possible to use a material in which impurities such as water and hydrogen are difficult to diffuse.

Further, an adhesive layer 262 is provided between the second substrate 202 and the insulating layer 221.

Further, as shown in FIG. 15, the insulating layer 213 is provided with an opening on the outer peripheral side of the first substrate 201 with respect to the pixel portion 11 and the signal line drive circuit 13. For example, when a resin material is used as the insulating layer 213, it is preferable to provide an opening surrounding the pixel portion 11 and the signal line drive circuit 13. With such a configuration, the vicinity of the side surface in contact with the outside of the insulating layer 213 and
Since the portion overlapping with the pixel portion 11 and the signal line drive circuit 13 and the like is not continuous, it is possible to suppress the diffusion of impurities such as water and hydrogen from the outside through the insulating layer 213.

By adopting a solid-state sealing structure as shown in FIG. 15, the first substrate 201 and the second substrate 202
It becomes easy to keep the distance uniform. Therefore, the first substrate 201 and the second substrate 2
As 02, a flexible substrate can be preferably used. Therefore, the pixel unit 11
, A part or all of the scanning line driving circuit 12 and the signal line driving circuit 13 can be bent and used. For example, various forms of electronic devices can be realized by attaching the display device 10 to a curved surface or folding the pixel portion of the display device 10.
[Modification example]
Hereinafter, an example of a touch panel having a touch sensor will be described.

FIG. 16 shows an example of a touch panel in which an on-cell type touch sensor is applied to the configuration illustrated in FIG.

A conductive layer 291 and a conductive layer 292 are provided on the outer surface of the second substrate 202, and an insulating layer 294 is provided so as to cover them. Further, a conductive layer 293 is provided on the insulating layer 294. The conductive layer 293 is electrically connected to two conductive layers 292 provided with the conductive layer 291 interposed therebetween through an opening provided in the insulating layer 294. Further, the insulating layer 294 and the substrate 296 are bonded to each other by the adhesive layer 295.

The capacitance formed between the conductive layer 291 and the conductive layer 292 changes as the object to be detected approaches. As a result, it is possible to detect that the object to be detected approaches or comes into contact with the object to be detected. By arranging the plurality of conductive layers 291 and the plurality of conductive layers 292 in a grid pattern, position information can be acquired.

Further, a terminal portion 299 is provided in a region near the outer periphery of the second substrate 202. Terminal part 2
The 99 is electrically connected to the FPC 297 via the connection layer 298.

Here, the substrate 296 can also be used as a substrate that a detector such as a finger or a stylus directly touches. In that case, it is preferable to provide a protective layer (ceramic coat or the like) on the substrate 296. The protective layer is, for example, silicon oxide, aluminum oxide, yttrium oxide,
Inorganic insulating materials such as yttria-stabilized zirconia (YSZ) can be used. Further, tempered glass may be used for the substrate 296. As the tempered glass, one that has been physically or chemically treated by an ion exchange method, an air-cooled tempering method, or the like and whose surface is subjected to compressive stress can be used. By providing the touch sensor on one surface of the tempered glass and providing the opposite surface on the outermost surface of the electronic device, for example, as the touch surface, the thickness of the entire device can be reduced.

As the touch sensor, for example, a capacitive touch sensor can be applied. As the capacitance method, there are a surface type capacitance method, a projection type capacitance method and the like. Further, as the projection type capacitance method, there are a self-capacitance method, a mutual capacitance method and the like. It is preferable to use the mutual capacitance method because simultaneous multipoint detection is possible. In the following, a case where a projection type capacitance type touch sensor is applied will be described.

Not limited to this, various sensors capable of detecting the approach or contact of the object to be detected such as a finger or a stylus can also be applied.

Here, the configuration of a so-called on-cell type touch panel in which wiring or the like constituting a touch sensor is formed on the outer surface of the second substrate 202 is shown, but the present invention is not limited to this. For example, the configuration of an external type (out-cell type) touch panel and an in-cell type touch panel may be applied. By using the on-cell type or in-cell type touch panel configuration, the thickness can be reduced even if the touch panel function is added to the display panel.

The above is the description of the cross-sectional configuration example.

[For each component]
Hereinafter, each component shown above will be described.

〔substrate〕
A material having a flat surface can be used for the substrate of the display device. A material that transmits the light is used for the substrate on the side that extracts the light from the light emitting element. For example, materials such as glass, quartz, ceramics, sapphire, and organic resins can be used.

By using a thin substrate, it is possible to reduce the weight and thickness of the display device. Further, by using a substrate having a thickness sufficient to have flexibility, a display device having flexibility can be realized.

As the glass, for example, non-alkali glass, barium borosilicate glass, aluminoborosilicate glass and the like can be used.

Examples of the material having flexibility and transparency to visible light include glass having a thickness sufficient to have flexibility, polyester resin such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), and polyacrylonitrile resin. , Polyimide resin, Polymethylmethacrylate resin, Polycarbonate (PC) resin, Polyester sulfone (PE)
S) Resins, polyamide resins, cycloolefin resins, polystyrene resins, polyamideimide resins, polyvinyl chloride resins, polytetrafluoroethylene (PTFE) resins and the like can be mentioned. In particular, it is preferable to use a material having a low coefficient of thermal expansion, and for example, a polyamide-imide resin, a polyimide resin, PET and the like can be preferably used. Further, a substrate in which glass fiber is impregnated with an organic resin or a substrate in which an inorganic filler is mixed with an organic resin to lower the coefficient of thermal expansion can also be used. Since the weight of the substrate using such a material is light, the display device using the substrate can also be made lightweight.

Further, since the substrate on the side that does not emit light does not have to have translucency, a metal substrate or the like can be used in addition to the substrates listed above. Since the metal substrate has high thermal conductivity and can easily conduct heat to the entire sealed substrate, it is possible to suppress a local temperature rise of the display device, which is preferable.

The material constituting the metal substrate is not particularly limited, but for example, a metal such as aluminum, copper, or nickel, or an alloy such as an aluminum alloy or stainless steel can be preferably used.

Further, a substrate that has been subjected to an insulating treatment by oxidizing the surface of the metal substrate or forming an insulating film on the surface may be used. For example, an insulating film may be formed by a coating method such as a spin coating method or a dip method, an electrodeposition method, a vapor deposition method, a sputtering method, or the like, or the insulating film may be left in an oxygen atmosphere or heated, or may be anodized. An oxide film may be formed on the surface of the substrate by such means.

On a flexible substrate, a hard coat layer that protects the surface of the display device from scratches (for example, a silicon nitride layer) or a layer made of a material that can disperse the pressure (for example, an aramid resin layer).
Etc. may be laminated. Further, in order to suppress a decrease in the life of the light emitting element due to moisture or the like, an insulating film having low water permeability may be laminated on the flexible substrate. For example, an inorganic insulating material such as silicon nitride, silicon oxide, aluminum oxide, or aluminum nitride can be used.

The substrate can also be used by stacking a plurality of layers. In particular, if the configuration has a glass layer, the barrier property against water and oxygen can be improved, and a highly reliable display device can be obtained.
For example, a substrate in which a glass layer, an adhesive layer, and an organic resin layer are laminated can be used from the side close to the light emitting element. By providing such an organic resin layer, it is possible to suppress cracks and cracks in the glass layer and improve the mechanical strength. By applying such a composite material of a glass material and an organic resin to a substrate, an extremely reliable and flexible display device can be obtained.

[Transistor]
The transistors of the display device include a conductive layer that functions as a gate electrode, a conductive layer that functions as a back gate electrode, a semiconductor layer, a conductive layer that functions as a source electrode, a conductive layer that functions as a drain electrode, and gate insulation. It has an insulating layer that functions as a layer.

That is, the transistor included in the display device of one aspect of the present invention has a structure in which gate electrodes are provided above and below the channel.

The crystallinity of the semiconductor material used for the transistor is also not particularly limited, and the amorphous semiconductor,
Any semiconductor having crystallinity (semiconductor, polycrystalline semiconductor, single crystal semiconductor, or semiconductor having a partially crystalline region) may be used. It is preferable to use a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.

Further, as the semiconductor material used for the transistor, for example, an oxide semiconductor can be used for the semiconductor layer. In particular, it is preferable to apply an oxide semiconductor having a bandgap larger than that of silicon. It is preferable to use a semiconductor material having a wider bandgap and a smaller carrier density than silicon because the current in the off state of the transistor can be reduced.

For example, the oxide semiconductor is at least indium (In) or zinc (Zn).
) Is preferably included. More preferably, In—M—Zn-based oxides (M is Al, Ti,
Contains oxides represented by (metals such as Ga, Ge, Y, Zr, Sn, La, Ce or Hf).

In particular, the semiconductor layer has a plurality of crystal portions, in which the c-axis is oriented substantially perpendicular to the surface to be formed of the semiconductor layer or the upper surface of the semiconductor layer, and grains are formed between adjacent crystal portions. It is preferable to use an oxide semiconductor layer in which no boundary is observed.

Since such an oxide semiconductor does not have a crystal grain boundary, it is possible to prevent cracks from being generated in the oxide semiconductor layer due to stress when the display panel is curved. therefore,
Such an oxide semiconductor can be suitably used for a display device having flexibility and being curved and used.

Further, by using an oxide semiconductor having such crystallinity as the semiconductor layer, fluctuations in electrical characteristics are suppressed, and a highly reliable transistor can be realized.

Transistors using oxide semiconductors with a bandgap larger than that of silicon are also available.
Due to its low off-current, it is possible to retain the charge stored in the capacitance connected in series with the transistor for a long period of time. By applying such a transistor to a pixel,
It is also possible to stop the drive circuit while maintaining the gradation of the image displayed in each display area.
As a result, it is possible to realize a display device with extremely reduced power consumption. Alternatively, it is also possible to switch between a drive mode that operates at a normal frame frequency and a drive mode that operates at a low frame frequency. In the drive mode that operates at a low frame frequency, the power consumption required for writing the image data during that period is reduced by writing the image data once and then extending the interval until the next image data is written. be able to.

[Conductive layer]
Materials that can be used for conductive layers such as transistor gates, sources and drains, as well as various wiring and electrodes that make up display devices include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, and silver. Examples thereof include a metal such as tantalum or tungsten, or an alloy containing this as a main component. Further, a film containing these materials can be used as a single layer or as a laminated structure. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which an aluminum film is laminated on a titanium film, a two-layer structure in which an aluminum film is laminated on a tungsten film, and a copper film on a copper-magnesium-aluminum alloy film. Two-layer structure for laminating, two-layer structure for laminating a copper film on a titanium film, two-layer structure for laminating a copper film on a tungsten film, a titanium film or a titanium nitride film, and an aluminum film or a copper film on top of it. A three-layer structure, a molybdenum film or a molybdenum nitride film, on which a titanium film or a titanium nitride film is formed, and an aluminum film or a copper film laminated on the film, and a molybdenum film or a molybdenum film or There is a three-layer structure that forms a molybdenum nitride film. Oxides such as indium oxide, tin oxide, and zinc oxide may be used. Further, it is preferable to use copper containing manganese because the controllability of the shape by etching is improved.

Further, as a translucent material that can be used for conductive layers such as various wirings and electrodes constituting the display device, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and gallium-added oxidation Conductive oxides such as zinc or graphene can be used. Alternatively, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy material containing the metal material can be used. Alternatively, a nitride of the metal material (for example, titanium nitride) may be used. When a metal material or an alloy material (or a nitride thereof) is used, it may be made thin enough to have translucency. Further, the laminated film of the above material can be used as the conductive layer. For example, it is preferable to use a laminated film of an alloy of silver and magnesium and an indium tin oxide because the conductivity can be enhanced.

[Insulation layer]
Insulating materials that can be used for each insulating layer, overcoat, spacer, etc. include, for example, resins such as acrylic and epoxy, resins having a siloxane bond such as silicone resin, silicon oxide, silicon oxide, and silicon nitride. , Silicon nitride, aluminum oxide and other inorganic insulating materials can also be used.

Further, it is preferable that the light emitting element is provided between a pair of insulating films having low water permeability. As a result, impurities such as water can be suppressed from entering the light emitting element, and deterioration of the reliability of the device can be suppressed.

Examples of the insulating film having low water permeability include a film containing nitrogen and silicon such as a silicon nitride film and a silicon nitride film, and a film containing nitrogen and aluminum such as an aluminum nitride film. again,
A silicon oxide film, a silicon nitride film, an aluminum oxide film, or the like may be used.

For example, the amount of water vapor permeation of an insulating film having low water permeability is 1 × ^10-5 [g / ( ^m2 · day).
] Or less, preferably 1 × 10 ^-6 [g / (m ² · day)] or less, more preferably 1 × 1
^0-7 [g / ( ^m2 · d)] or less, more preferably 1 × ^10-8 [g / ( ^m2 · d)]
ay)] The following.

[Adhesive layer, encapsulant]
As the adhesive layer and the sealing material, various curable adhesives such as a photocurable adhesive such as an ultraviolet curable type, a reaction curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used. Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, and PVB (polyvinyl butyral).
Examples thereof include a resin and an EVA (ethylene vinyl acetate) resin. In particular, a material having low moisture permeability such as an epoxy resin is preferable. Further, a two-component mixed type resin may be used. Further, an adhesive sheet or the like may be used.

Further, the resin may contain a desiccant. For example, a substance that adsorbs water by chemisorption, such as an oxide of an alkaline earth metal (calcium oxide, barium oxide, etc.), can be used. Alternatively, a substance that adsorbs water by physical adsorption, such as zeolite or silica gel, may be used. It is preferable that a desiccant is contained because impurities such as moisture can be suppressed from entering the functional element and the reliability of the display panel is improved.

Further, by mixing the resin with a filler having a high refractive index or a light scattering member, the efficiency of light extraction from the light emitting element can be improved. For example, titanium oxide, barium oxide,
Zeolites, zirconium and the like can be used.

[Light emitting element]
As the light emitting element, an element capable of self-luminous light can be used, and an element whose brightness is controlled by a current or a voltage is included in the category. For example, a light emitting diode (LED), an organic EL element, an inorganic EL element, or the like can be used.

The light emitting element may be any of a top emission type, a bottom emission type, and a dual emission type. A conductive film that transmits visible light is used for the electrode on the side that extracts light. Further, it is preferable to use a conductive film that reflects visible light for the electrode on the side that does not take out light.

The EL layer has at least a light emitting layer. The EL layer is a layer other than the light emitting layer, which is a substance having a high hole injecting property, a substance having a high hole transporting property, a hole blocking material, a substance having a high electron transporting property, a substance having a high electron injecting property, or a bipolar substance. It may further have a layer containing a substance (a substance having high electron transport property and hole transport property) and the like.

Either a low molecular weight compound or a high molecular weight compound can be used for the EL layer, and an inorganic compound may be contained. Each layer constituting the EL layer is a thin-film deposition method (including a vacuum-film deposition method).
, Transfer method, printing method, inkjet method, coating method and the like.

When a voltage higher than the threshold voltage of the light emitting element is applied between the cathode and the anode, holes are injected into the EL layer from the anode side and electrons are injected from the cathode side. The injected electrons and holes are recombined in the EL layer, and the luminescent substance contained in the EL layer emits light.

When a white light emitting element is applied as the light emitting element, it is preferable that the EL layer contains two or more kinds of light emitting substances. For example, white light emission can be obtained by selecting a light emitting substance so that the light emission of each of two or more light emitting substances has a complementary color relationship. for example,
Luminescent substances that emit light such as R (red), G (green), B (blue), Y (yellow), O (orange), respectively.
Or, among luminescent substances exhibiting luminescence containing spectral components of two or more colors among R, G, and B.
It is preferable to include 2 or more. Further, it is preferable to apply a light emitting element having two or more peaks in the spectrum of light emitted from the light emitting element within the wavelength range of the visible light region (for example, 350 nm or more and 750 nm or less). Further, the emission spectrum of the material having a peak in the yellow wavelength region is preferably a material having a spectral component also in the green and red wavelength regions.

The EL layer preferably has a structure in which a light emitting layer containing a light emitting material that emits one color and a light emitting layer containing a light emitting material that emits another color are laminated. For example, a plurality of light emitting layers in the EL layer may be laminated so as to be in contact with each other, or may be laminated via a region that does not contain any of the light emitting materials. For example, a region is provided between the fluorescent light emitting layer and the phosphorescent light emitting layer, which contains the same material as the fluorescent light emitting layer or the phosphorescent light emitting layer (for example, a host material or an assist material) and does not contain any light emitting material. May be good. This facilitates the fabrication of the light emitting element and reduces the drive voltage.

Further, the light emitting element may be a single element having one EL layer, or may be a tandem element in which a plurality of EL layers are laminated via a charge generation layer.

The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide (ITO:
Indium Tin Oxide), indium zinc oxide, zinc oxide, zinc oxide added with gallium, and the like can be used. Also, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, alloys containing these metal materials, or nitrides of these metal materials (eg,). Titanium nitride) or the like can also be used by forming it thin enough to have translucency. again,
The laminated film of the above material can be used as a conductive layer. For example, it is preferable to use a laminated film of an alloy of silver and magnesium and ITO because the conductivity can be enhanced. Further, graphene or the like may be used.

As the conductive film that reflects visible light, for example, a metal material such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy containing these metal materials shall be used. Can be done. Further, lanthanum, neodymium, germanium or the like may be added to the above metal materials or alloys. Also, alloys containing aluminum (aluminum alloys) such as alloys of aluminum and titanium, alloys of aluminum and nickel, alloys of aluminum and neodym, alloys of silver and copper, alloys of silver and palladium and copper,
An alloy containing silver, such as an alloy of silver and magnesium, can be used. Alloys containing silver and copper
It is preferable because of its high heat resistance. Further, by laminating a metal film or an oxide semiconductor film in contact with the aluminum alloy film, oxidation of the aluminum alloy film can be suppressed. The metal film,
Examples of the material of the oxide semiconductor film include titanium and titanium oxide. Further, the conductive film that transmits the visible light and the film made of a metal material may be laminated. For example, a laminated film of silver and ITO, a laminated film of an alloy of silver and magnesium and ITO can be used.

The conductive layer may be formed by a thin-film deposition method or a sputtering method, respectively. others,
It can be formed by using a ejection method such as an inkjet method, a printing method such as a screen printing method, or a plating method.

The above-mentioned light emitting layer and the layer containing a substance having a high hole injecting property, a substance having a high hole transporting property, a substance having a high electron transporting property, a substance having a high electron injecting property, a bipolar substance, and the like are included. Each may have an inorganic compound such as a quantum dot or a polymer compound (oligoform, dendrimer, polymer, etc.). For example, by using quantum dots in the light emitting layer, it can be made to function as a light emitting material.

The quantum dot materials include colloidal quantum dot materials, alloy-type quantum dot materials, and the like.
A core-shell type quantum dot material, a core type quantum dot material, or the like can be used. Further, a material containing an element group of Group 12 and Group 16, Group 13 and Group 15, or Group 14 and Group 16 may be used. Or cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium,
Quantum dot materials containing elements such as lead, gallium, arsenide, and aluminum may be used.

[Colored layer]
Examples of the material that can be used for the colored layer include a metal material, a resin material, a resin material containing a pigment or a dye, and the like.

[Shading layer]
Examples of the material that can be used for the light-shielding layer include carbon black, oxide semiconductors, and composite oxides containing solid solutions of a plurality of oxide semiconductors. Further, as the light-shielding layer, a laminated film of a film containing a material of a colored layer can also be used. For example, a laminated structure of a film containing a material used for a colored layer that transmits light of a certain color and a film containing a material used for a colored layer that transmits light of another color can be used. By using the same material for the colored layer and the light-shielding layer, it is preferable because the device can be shared and the process can be simplified.

[Connection layer]
Anisotropic conductive film (ACF: Anise) is applied to the connection layer that connects the FPC or IC to the terminal.
optical Conducive Film) and anisotropic conductive paste (ACP:
Anisotropic Conducive Paste) and the like can be used.

The above is a description of each component.

This embodiment can be carried out in combination with at least a part thereof as appropriate in combination with other embodiments described in the present specification.

(Embodiment 3)
In this embodiment, an example of a method for manufacturing a display device using a flexible substrate will be described.

Here, a layer including a display element, a circuit, wiring, electrodes, an insulating layer, an optical member such as a colored layer and a light-shielding layer, and the like are collectively referred to as an element layer. For example, the element layer includes a light emitting element, and may include an element such as a wiring electrically connected to the light emitting element, a pixel, or a transistor used in a circuit, in addition to the light emitting element.

Further, here, a member that supports the element layer and has flexibility at the stage when the light emitting element is completed (the manufacturing process is completed) is referred to as a substrate. For example, the substrate also includes an extremely thin film having a thickness of 10 nm or more and 300 μm or less.

As a method of forming an element layer on a substrate having flexibility and having an insulating surface, there are typically two methods listed below. One is a method of forming a device layer directly on a flexible substrate. The other is a method in which the element layer is formed on a support substrate different from the flexible substrate, the element layer and the support base material are peeled off, and the element layer is transposed to the substrate. Although not described in detail here, in addition to the above two methods, a method of forming an element layer on a non-flexible substrate and thinning the substrate by polishing or the like to give flexibility. There is also.

When the material constituting the substrate has heat resistance to the heat applied to the element layer forming step, it is preferable to form the element layer directly on the substrate because the process is simplified. At this time, it is preferable to form the element layer in a state where the substrate is fixed to the supporting base material because the transfer between the devices and the device is facilitated.

When the method of forming the element layer on the supporting base material and then transposing it to the substrate is used, first, the release layer and the insulating layer are laminated on the supporting base material, and the element layer is formed on the insulating layer. Subsequently, it is peeled off between the support base material and the element layer, and the element layer is transposed to the substrate. At this time, a material that causes peeling may be selected at the interface between the support base material and the peeling layer, the interface between the peeling layer and the insulating layer, or in the peeling layer.
In this method, by using a material having high heat resistance for the supporting base material and the release layer, it is possible to raise the upper limit of the temperature applied when forming the element layer when forming the element layer, and the upper limit of the temperature applied when forming the element layer can be increased, which is more reliable. It is preferable because an element layer having an element can be formed.

For example, as the release layer, a layer containing a refractory metal material such as tungsten and a layer containing an oxide of the metal material are laminated and used. Further, as the insulating layer on the release layer, it is preferable to use a layer in which a plurality of silicon oxide, silicon nitride, silicon oxide, silicon nitride and the like are laminated. In the present specification, the oxidative nitride refers to a material having a higher oxygen content than oxygen as its composition, and the nitride oxide refers to a material having a higher nitrogen content than oxygen as its composition. Point to.

Examples of the method of peeling the element layer and the supporting base material include applying a mechanical force, etching the peeling layer, and infiltrating a liquid into the peeling interface. Alternatively, the peeling may be performed by heating or cooling by utilizing the difference in thermal expansion of the two layers forming the peeling interface.

When starting the peeling, it is preferable to first form the starting point of the peeling and then proceed with the peeling from the starting point. The starting point of peeling is formed by locally heating a part of the insulating layer or the peeling layer with a laser beam or the like, or physically cutting or penetrating a part of the insulating layer or the peeling layer with a sharp member. be able to.

Further, if peeling is possible at the interface between the supporting base material and the insulating layer, it is not necessary to provide the peeling layer.

For example, by using glass as the supporting base material and using an organic resin such as polyimide as the insulating layer, the glass can be peeled off at the interface between the glass and the organic resin. Further, the remaining organic resin such as polyimide can be used as a substrate.

Alternatively, a heat generating layer may be provided between the supporting base material and the insulating layer made of an organic resin, and the heat generating layer may be heated to perform peeling at the interface between the heat generating layer and the insulating layer. As the heat generating layer, various materials such as a material that generates heat by passing an electric current, a material that generates heat by absorbing light, and a material that generates heat by applying a magnetic field can be used. For example, as the heat generating layer, a semiconductor, a metal, or an insulator can be selected and used.

Hereinafter, an example of a more specific manufacturing method will be described. In the manufacturing method described below, an input / output device having flexibility according to one aspect of the present invention can also be manufactured by changing the layer formed as the layer to be peeled off.

First, an island-shaped peeling layer 303 is formed on the fabrication substrate 301, and the peeled layer 3 is formed on the peeling layer 303.
05 is formed (FIG. 17 (A)). Separately from this, an island-shaped peeling layer 323 is formed on the production substrate 321 and a peeled layer 325 is formed on the peeling layer 323 (FIG. 17B).

Here, an example of forming an island-shaped peeling layer is shown, but the present invention is not limited to this. In this step, when the peeled layer is peeled from the manufactured substrate, a material that causes peeling at the interface between the manufactured substrate and the peeled layer, the interface between the peeled layer and the peeled layer, or the peeled layer is selected. In the present embodiment, a case where peeling occurs at the interface between the peeled layer and the peeled layer is exemplified, but the present invention is not limited to this depending on the combination of the peeled layer and the material used for the peeled layer. When the layer to be peeled has a laminated structure, the layer in contact with the peeled layer is particularly referred to as a first layer.

For example, when the peeling layer has a laminated structure of a tungsten film and a tungsten oxide film, peeling occurs at the interface (or near the interface) between the tungsten film and the tungsten oxide film, so that a part of the peeling layer is on the peeled layer side. (Tungsten oxide film here) may remain. Further, the peeling layer remaining on the peeling layer side may be subsequently removed.

For example, when the peeling layer has a laminated structure of a tungsten film and a tungsten oxide film, peeling occurs at the interface (or near the interface) between the tungsten film and the tungsten oxide film, so that a part of the peeling layer is on the peeled layer side. (Tungsten oxide film here) may remain. Further, the peeling layer remaining on the peeling layer side may be subsequently removed.

As the manufacturing substrate, a substrate having heat resistance that can withstand at least the processing temperature during the manufacturing process is used. As the manufacturing substrate, for example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, a metal substrate, a resin substrate, a plastic substrate, or the like can be used.

When a glass substrate is used as the manufacturing substrate, an insulating film such as a silicon oxide film, a silicon nitride film, a silicon nitride film, or a silicon nitride film is formed as a base film between the manufacturing substrate and the release layer to form a glass substrate. It is preferable because it can prevent contamination from silicon.

The release layer is an element selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, and silicon, an alloy material containing the element, or the element. It can be formed by using a compound material containing it. The crystal structure of the layer containing silicon may be amorphous, microcrystal, or polycrystal. Further, oxide semiconductors such as aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, indium oxide, indium tin oxide, indium zinc oxide, and In—Ga—Zn oxide may be used. It is preferable to use a refractory metal material such as tungsten, titanium, or molybdenum for the peeling layer because the degree of freedom in the process of forming the peeling layer is increased.

The release layer can be formed by, for example, a sputtering method, a plasma CVD method, a coating method (including a spin coating method, a droplet ejection method, a dispensing method, etc.), a printing method, or the like. The thickness of the release layer is, for example, 10 nm or more and 200 nm or less, preferably 20 nm or more and 100 nm or less.

When the release layer has a single layer structure, it is preferable to form a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum. Further, a layer containing a tungsten oxide or an oxide nitride, a layer containing a molybdenum oxide or an oxide nitride, or a layer containing an oxide or an oxide of a mixture of tungsten and molybdenum may be formed. note that,
The mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

Further, when forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as a release layer, a layer containing tungsten is formed, and an insulating film formed of an oxide is formed on the layer above the layer. It may be utilized that a layer containing a tungsten oxide is formed at the interface between the tungsten layer and the insulating film. Further, the surface of the layer containing tungsten is subjected to thermal oxidation treatment, oxygen plasma treatment, nitrous oxide ₍ N2O) plasma treatment, treatment with a solution having strong oxidizing power such as ozone water, etc. to obtain the oxide of tungsten. The containing layer may be formed. Further, the plasma treatment and the heat treatment may be performed by oxygen, nitrogen, nitrous oxide alone, or in a mixed gas atmosphere of the gas and another gas. By changing the surface state of the peeling layer by the plasma treatment or the heat treatment, it is possible to control the adhesion between the peeling layer and the insulating film formed later.

If peeling is possible at the interface between the manufactured substrate and the layer to be peeled off, the peeling layer may not be provided. For example, glass is used as a manufacturing substrate, and an organic resin such as polyimide, polyester, polyolefin, polyamide, polycarbonate, or acrylic is formed in contact with the glass. Next, laser irradiation and heat treatment are performed to improve the adhesion between the production substrate and the organic resin. Then, an insulating film, a transistor, or the like is formed on the organic resin. After that, the laser irradiation is performed at a higher energy density than the previous laser irradiation, or the heat treatment is performed at a temperature higher than the previous heat treatment, so that the material can be peeled off at the interface between the manufactured substrate and the organic resin. Also, at the time of peeling,
The liquid may be impregnated into the interface between the production substrate and the organic resin to separate them.

In this method, since an insulating film, a transistor, or the like is formed on an organic resin having low heat resistance, it is not possible to apply a high temperature to the substrate in the manufacturing process. Here, a transistor using an oxide semiconductor can be suitably formed on an organic resin because a high-temperature manufacturing step is not essential.

The organic resin may be used as a substrate constituting the apparatus, or the organic resin may be removed and another substrate may be attached to the exposed surface of the layer to be peeled off using an adhesive. Further, another substrate (support film) may be attached to the organic resin by using an adhesive.

Alternatively, a metal layer may be provided between the production substrate and the organic resin, the metal layer may be heated by passing an electric current through the metal layer, and peeling may be performed at the interface between the metal layer and the organic resin.

The insulating layer (first layer) formed in contact with the release layer is preferably formed as a single layer or a multilayer by using a silicon nitride film, a silicon nitride film, a silicon oxide film, a silicon nitride oxide film, or the like. .. Not limited to this, the optimum material can be selected according to the material used for the release layer.

The insulating layer can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. For example, the film formation temperature is set to 250 ° C. or higher by the plasma CVD method.
By forming the temperature below ° C, a dense and extremely moisture-proof film can be obtained. note that,
The thickness of the insulating layer is preferably 10 nm or more and 3000 nm or less, more preferably 200 nm or more and 1500 nm or less.

Next, the manufacturing substrate 301 and the manufacturing substrate 321 are bonded together using the adhesive layer 307 so that the surfaces on which the layers to be peeled are formed face each other, and the adhesive layer 307 is cured (FIG. 17 (FIG. 17).
C)).

It is preferable that the production substrate 301 and the production substrate 321 are bonded together in a reduced pressure atmosphere.

Although FIG. 17C shows a case where the peeling layer 303 and the peeling layer 323 have different sizes, as shown in FIG. 17D, peeling layers having the same size may be used.

The adhesive layer 307 is arranged so as to overlap the peeling layer 303, the peeling layer 305, the peeling layer 325, and the peeling layer 323. Then, the end portion of the adhesive layer 307 is the release layer 303 or the release layer 323.
It is preferable that it is located inside at least one of the ends (the one that is desired to be peeled off first). As a result, it is possible to prevent the production substrate 301 and the production substrate 321 from being strongly adhered to each other, and it is possible to suppress a decrease in the yield in the subsequent peeling step.

For the adhesive layer 307, for example, various curable adhesives such as a photocurable adhesive such as an ultraviolet curable type, a reaction curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used. Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC resin, PVB resin, EVA resin and the like. In particular, a material having low moisture permeability such as an epoxy resin is preferable. As the adhesive, it is preferable to use a material having low fluidity so that it can be arranged only in a desired region. For example, an adhesive sheet, an adhesive sheet, a sheet-like or film-like adhesive may be used. For example, OCA (optica)
1 Clear adhesive) film can be preferably used.

The adhesive may have adhesiveness before bonding, or may develop adhesiveness by heating or light irradiation after bonding.

Further, the resin may contain a desiccant. For example, a substance that adsorbs water by chemisorption, such as an oxide of an alkaline earth metal (calcium oxide, barium oxide, etc.), can be used. Alternatively, a substance that adsorbs water by physical adsorption, such as zeolite or silica gel, may be used. It is preferable that a desiccant is contained because deterioration of the functional element due to the intrusion of moisture in the atmosphere can be suppressed and the reliability of the apparatus is improved.

Next, the starting point of peeling is formed by irradiation with a laser beam (FIGS. 18A and 18B).

The production substrate 301 and the production substrate 321 may be peeled from either side. When the sizes of the peeling layers are different, they may be peeled off from the substrate on which the large peeling layer is formed, or may be peeled off from the substrate on which the small peeling layer is formed. When an element such as a semiconductor element or a light emitting element is manufactured only on one substrate, it may be peeled off from the substrate on the side on which the element is formed, or may be peeled off from the other substrate.
Here, an example in which the manufactured substrate 301 is peeled off first is shown.

The laser beam irradiates the region where the cured adhesive layer 307, the peeled layer 305, and the peeled layer 303 overlap (see arrow P1 in FIG. 18A).

By removing a part of the first layer, a starting point of peeling can be formed (see the area surrounded by the dotted line in FIG. 18B). At this time, not only the first layer but also other layers of the layer to be peeled 305 and the peeling layer 3
03, a part of the adhesive layer 307 may be removed.

It is preferable to irradiate the laser beam from the substrate side on which the peeling layer to be peeled is provided. When irradiating the region where the peeling layer 303 and the peeling layer 323 overlap with laser light, cracks are formed only in the peeling layer 305 of the peeling layer 305 and the peeling layer 325 to selectively produce the substrate 301 and The peeling layer 303 can be peeled off (see the region surrounded by the dotted line in FIG. 18B. Here, an example of removing a part of each layer constituting the peeled layer 305 is shown).

Then, the layer to be peeled 305 and the manufactured substrate 301 are separated from the starting point of the formed peeling (FIGS. 18C and 18D). As a result, the layer to be peeled 305 is formed from the manufacturing substrate 301 to the manufacturing substrate 321.
Can be transposed to.

For example, the layer to be peeled 305 and the substrate 301 to be peeled may be separated from the starting point of peeling by a physical force (a process of peeling with a human hand or a jig, a process of separating while rotating a roller, etc.).

Further, the manufacturing substrate 3 is made by infiltrating a liquid such as water into the interface between the peeling layer 303 and the peeled layer 305.
01 and the layer to be peeled 305 may be separated. The liquid permeates between the peeling layer 303 and the peeled layer 305 due to the capillary phenomenon, so that the liquid can be easily separated. Further, it is possible to suppress that the static electricity generated at the time of peeling adversely affects the functional element contained in the peeled layer 305 (such as the semiconductor element being destroyed by the static electricity).

Next, the exposed layer to be peeled 305 and the substrate 331 are bonded together using the adhesive layer 333.
The adhesive layer 333 is cured (FIG. 19 (A)).

It is preferable that the layer to be peeled 305 and the substrate 331 are bonded together in a reduced pressure atmosphere.

Next, the starting point of peeling is formed by irradiation with a laser beam (FIGS. 19B and 19C).

The laser beam irradiates the region where the cured adhesive layer 333, the peeled layer 325, and the peeled layer 323 overlap (see arrow P2 in FIG. 19B). A starting point of peeling can be formed by removing a part of the first layer (see the area surrounded by the dotted line in FIG. 19C. Here, an example of removing a part of each layer constituting the peeled layer 325. Shows.). At this time, not only the first layer but also
Other layers of the layer to be peeled 325, a part of the peeling layer 323, and the adhesive layer 333 may be removed.

The laser beam is preferably emitted from the side of the fabrication substrate 321 provided with the release layer 323.

Then, the layer to be peeled 325 and the manufactured substrate 321 are separated from the starting point of the formed peeling (FIG. 19 (D)). As a result, the peelable layer 305 and the peelable layer 325 can be transposed to the substrate 331.

After that, the substrate can be further attached to the layer to be peeled 325.

The exposed layer to be peeled 325 and the substrate 341 are bonded together by the adhesive layer 343, and the adhesive layer 3 is bonded.
43 is cured (FIG. 20 (A)). Here, an example in which the substrate 341 is provided with an opening in advance is shown.

As described above, the layer to be peeled can be sandwiched between the pair of flexible substrates.

After that, as shown in FIG. 20B, unnecessary ends of the substrate 331, the substrate 341, etc. may be cut and removed. At this time, a part of the end portions of the layer to be peeled 305 and the layer 325 to be peeled may be cut at the same time.

By the above method, a flexible device can be manufactured. By using the configuration exemplified in the above embodiment for the layer to be peeled off, a flexible display device can be manufactured.

In the method for producing a light emitting device according to one aspect of the present invention shown above, a pair of production substrates provided with a peeling layer and a layer to be peeled are bonded together, and then a starting point of peeling is formed by irradiation with a laser beam. After making each peeling layer and the layer to be peeled into a state where they can be easily peeled off, peeling is performed. This makes it possible to improve the yield of the peeling process.

In addition, after the pair of production boards on which the layers to be peeled are formed are bonded in advance,
It is possible to peel off and bond the substrate constituting the device to be manufactured to the layer to be peeled off. Therefore, when the layers to be peeled off are bonded to each other, the manufactured substrates having low flexibility can be bonded to each other, and the alignment accuracy of the bonding is improved as compared with the case where the flexible substrates are bonded to each other. Can be done.

As shown in FIG. 21 (A), the end portion of the peeled region 351 of the peeled layer 305 is
It is preferably located inside the end of the release layer 303. As a result, the yield of the peeling process can be increased. When there are a plurality of regions 351, a release layer 303 may be provided for each region 351 as shown in FIG. 21 (B), or 1 as shown in FIG. 21 (C).
A plurality of regions 351 may be provided on one peeling layer 303.

The above is a description of a method for manufacturing a flexible display device.

This embodiment can be carried out in combination with at least a part thereof as appropriate in combination with other embodiments described in the present specification.

(Embodiment 4)
In the present embodiment, an example of an electronic device to which the display device of one aspect of the present invention can be applied will be described.

An electronic device or a lighting device can be manufactured by using the display device of one aspect of the present invention. By using the display device of one aspect of the present invention, it is possible to manufacture an electronic device or a lighting device capable of obtaining a large capacity even in a small area. Using the display device of one aspect of the present invention, it is possible to manufacture an electronic device or a lighting device capable of obtaining a large capacity even when a gradation display is performed while maintaining a low voltage.

Examples of electronic devices include television devices, desktop or notebook personal computers, monitors for computers, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and acoustic devices. Examples include a playback device and a large game machine such as a pachinko machine.

The electronic device or lighting device of one aspect of the present invention is an inner wall or an outer wall of a house or a building.
Alternatively, it can be incorporated along the curved surface of the interior or exterior of an automobile.

The electronic device of one aspect of the present invention may have a secondary battery, and it is preferable that the secondary battery can be charged by using non-contact power transmission.

Examples of the secondary battery include a lithium ion secondary battery such as a lithium polymer battery (lithium ion polymer battery) using a gel-like electrolyte, a nickel hydrogen battery, a nicad battery, an organic radical battery, a lead storage battery, an air secondary battery, and nickel. Examples include zinc batteries and silver-zinc batteries.

The electronic device of one aspect of the present invention may have an antenna. By receiving the signal with the antenna, the display unit can display images, information, and the like. Further, when the electronic device has an antenna and a secondary battery, the antenna may be used for non-contact power transmission.

The electronic device of one aspect of the present invention includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, It may have the ability to measure voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays).

The electronic device of one aspect of the present invention can have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function to display a date or time, a function to execute various software (programs), wireless communication. It can have a function, a function of reading a program or data recorded on a recording medium, and the like.

Further, in an electronic device having a plurality of display units, a function of mainly displaying image information on one display unit and mainly displaying character information on another display unit, or parallax is considered on a plurality of display units. By displaying an image, it is possible to have a function of displaying a three-dimensional image or the like. Further, in an electronic device having an image receiving unit, a function of shooting a still image or a moving image, a function of automatically or manually correcting the shot image, and a function of saving the shot image in a recording medium (external or built in the electronic device). , It is possible to have a function of displaying the captured image on the display unit and the like. The functions of the electronic device of one aspect of the present invention are not limited to these, and can have various functions.

22 (A), (B), (C), (D), and (E) show an example of an electronic device having a curved display unit 7000. The display unit 7000 is provided with a curved display surface, and can display along the curved display surface. The display unit 7000 may have flexibility.

The display unit 7000 is manufactured by using the display device or the like according to one aspect of the present invention. According to one aspect of the present invention, it is possible to provide an electronic device having reduced power consumption, a curved display unit, and high reliability.

22 (A) and 22 (B) show an example of a mobile phone. Mobile phone 71 shown in FIG. 22 (A)
The mobile phone 7110 shown in 00 and FIG. 22B has a housing 7101 and a display unit 7, respectively.
000, operation button 7103, external connection port 7104, speaker 7105, microphone 71
It has 06 and the like. The mobile phone 7110 shown in FIG. 22B further has a camera 7107.

Each mobile phone has a touch sensor on the display unit 7000. All operations such as making a phone call or inputting characters can be performed by touching the display unit 7000 with a finger or a stylus.

In addition, by operating the operation button 7103, the power can be turned on and off, and the display unit 7000 can be operated.
You can switch the type of image displayed in. For example, you can switch from the mail composition screen to the main menu screen.

In addition, by providing a detection device such as a gyro sensor or an acceleration sensor inside the mobile phone, the orientation (vertical or horizontal) of the mobile phone is determined, and the orientation of the screen display of the display unit 7000 is automatically switched. Can be. Further, the orientation of the screen display can be switched by touching the display unit 7000, operating the operation button 7103, voice input using the microphone 7106, or the like.

22 (C) and 22 (D) show an example of a mobile information terminal. The mobile information terminal 7200 shown in FIG. 22C and the mobile information terminal 7210 shown in FIG. 22D each have a housing 7201 and a display unit 7000, respectively. Further, it may have an operation button, an external connection port, a speaker, a microphone, an antenna, a camera, a battery, or the like. The display unit 7000 is provided with a touch sensor. The mobile information terminal can be operated by touching the display unit 7000 with a finger or a stylus.

The portable information terminal exemplified in this embodiment has one or more functions selected from, for example, a telephone, a notebook, an information browsing device, and the like. Specifically, they can be used as smartphones. The mobile information terminal exemplified in this embodiment can execute various applications such as mobile phone, e-mail, text viewing and creation, music playback, Internet communication, and computer game.

The mobile information terminal 7200 and the mobile information terminal 7210 can display characters, image information, and the like on a plurality of surfaces thereof. For example, as shown in FIGS. 22C and 22D, three operation buttons 7202 can be displayed on one surface, and information 7203 indicated by a rectangle can be displayed on the other surface. FIG. 22C shows an example in which information is displayed on the upper side of the mobile information terminal, and FIG. 22D shows an example.
Will show an example in which information is displayed on the side of a mobile information terminal. Further, the information may be displayed on three or more sides of the mobile information terminal.

Examples of information include SNS (social networking service) notifications, displays notifying incoming calls such as e-mails and telephones, titles or senders of e-mails, date and time, time, remaining battery level, and antennas. There is reception strength and so on. Alternatively, an operation button, an icon, or the like may be displayed instead of the information at the position where the information is displayed.

For example, a user of a mobile information terminal 7200 can put a mobile information terminal 7200 in the chest pocket of clothes.
The display (here, information 7203) can be confirmed in the state where the information is stored.

Specifically, the telephone number or name of the caller of the incoming call can be input to the mobile information terminal 7200.
Display at a position that can be observed from above. The user can check the display and determine whether or not to receive the call without taking out the mobile information terminal 7200 from the pocket.

FIG. 22 (E) shows an example of a television device. The television device 7300 has a housing 7.
A display unit 7000 is incorporated in 301. Here, the housing 7 is provided by the stand 7303.
The configuration which supported 301 is shown.

The operation of the television device 7300 shown in FIG. 22 (E) can be performed by the operation switch provided in the housing 7301 or the remote control operation machine 7311 separately. Or, the display unit 70
The 00 may be provided with a touch sensor, or may be operated by touching the display unit 7000 with a finger or the like. The remote control operation machine 7311 may have a display unit for displaying information output from the remote control operation machine 7311. The channel and volume can be operated by the operation keys or the touch panel provided in the remote controller 7311, and the image displayed on the display unit 7000 can be operated.

The television device 7300 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts. In addition, by connecting to a wired or wireless communication network via a modem, information communication is performed in one direction (sender to receiver) or two-way (sender and receiver, or between receivers, etc.). It is also possible.

FIG. 22F shows an example of a lighting device having a curved light emitting portion.

The light emitting portion of the lighting device shown in FIG. 22F is manufactured by using the display device or the like according to one aspect of the present invention. According to one aspect of the present invention, it is possible to provide a highly reliable lighting device having a curved light emitting portion with reduced power consumption.

The light emitting portion 7411 included in the lighting device 7400 shown in FIG. 22F has a configuration in which two light emitting portions curved in a convex shape are symmetrically arranged. Therefore, it is possible to illuminate in all directions centering on the lighting device 7400.

Further, the light emitting portion included in the lighting device 7400 may have flexibility. The light emitting portion may be fixed by a member such as a plastic member or a movable frame, and the light emitting surface of the light emitting portion may be freely curved according to the application.

The lighting device 7400 has a base portion 7401 including an operation switch 7403 and a light emitting portion supported by the base portion 7401.

Although the lighting device in which the light emitting portion is supported by the base portion is illustrated here, the housing provided with the light emitting portion can also be fixed to the ceiling or hung from the ceiling.
Since the light emitting surface can be curved and used, the light emitting surface can be curved in a concave shape to illuminate a specific area brightly, or the light emitting surface can be curved in a convex shape to illuminate the entire room brightly.

From FIG. 23 (A) to FIG. 23 (I), a flexible and bendable display unit 70.
An example of a portable information terminal having 01 is shown.

The display unit 7001 is manufactured by using the display device or the like according to one aspect of the present invention. For example, a display device or the like that can be bent with a radius of curvature of 0.01 mm or more and 150 mm or less can be applied. Further, the display unit 7001 may be provided with a touch sensor, and the portable information terminal can be operated by touching the display unit 7001 with a finger or the like. According to one aspect of the present invention, it is possible to provide a highly reliable electronic device provided with a flexible display unit.

23 (A) and 23 (B) are perspective views showing an example of a mobile information terminal. Mobile information terminal 75
00 has a housing 7501, a display unit 7001, a drawer member 7502, an operation button 7503, and the like.

The mobile information terminal 7500 has a flexible display unit 7001 wound in a roll shape in the housing 7501. The display unit 7001 can be pulled out by using the drawer member 7502.

Further, the mobile information terminal 7500 can receive a video signal by the built-in control unit, and the received video can be displayed on the display unit 7001. Further, the mobile information terminal 7500 has a built-in battery. Further, the housing 7501 may be provided with a terminal portion for connecting the connector, and the video signal and the electric power may be directly supplied from the outside by wire.

In addition, the operation button 7503 can be used to turn the power on and off, switch the image to be displayed, and the like. Note that FIGS. 23 (A) and 23 (B) show an example in which the operation button 7503 is arranged on the side surface of the mobile information terminal 7500, but the present invention is not limited to this, and the mobile information terminal 7500 is not limited to this.
It may be arranged on the same surface (front surface) as the display surface of the above, or on the back surface.

FIG. 23B shows a mobile information terminal 7500 with the display unit 7001 pulled out.
In this state, the image can be displayed on the display unit 7001. Further, as a configuration in which the mobile information terminal 7500 displays differently depending on the state of FIG. 23 (A) in which a part of the display unit 7001 is wound in a roll shape and the state of FIG. 23 (B) in which the display unit 7001 is pulled out. May be good. For example, FIG. 23
By hiding the roll-shaped portion of the display unit 7001 in the state of (A), the power consumption of the mobile information terminal 7500 can be reduced.

In addition, in order to fix the display surface of the display unit 7001 so as to be flat when the display unit 7001 is pulled out, a frame for reinforcement may be provided on the side portion of the display unit 7001.

In addition to this configuration, a speaker may be provided in the housing to output audio by an audio signal received together with the video signal.

23 (C) to 23 (E) show an example of a foldable mobile information terminal.
23 (C) shows the unfolded state, FIG. 23 (D) shows the state in the process of changing from one of the unfolded state or the folded state to the other, and FIG. 23 (E) shows the folded state of the mobile information terminal. 7600 is shown. The mobile information terminal 7600 is excellent in portability in the folded state, and is excellent in listability due to the wide seamless display area in the unfolded state.

The display unit 7001 is supported by three housings 7601 connected by a hinge 7602. By bending between the two housings 7601 via the hinge 7602, the mobile information terminal 7600 can be reversibly deformed from the unfolded state to the folded state.

23 (F) and 23 (G) show an example of a foldable mobile information terminal. FIG. 23 (F)
23 (G) shows a mobile information terminal 7650 in a state in which the display unit 7001 is folded so as to be inside, and FIG. 23 (G) shows a state in which the display unit 7001 is folded so as to be outside. The mobile information terminal 7650 has a display unit 7001 and a non-display unit 7651. By folding the display unit 7001 so that it is inside when the mobile information terminal 7650 is not used, the display unit 7001
It is possible to suppress stains and scratches on the surface.

FIG. 23 (H) shows an example of a flexible portable information terminal. The mobile information terminal 7700 has a housing 7701 and a display unit 7001. Furthermore, the button 7703a, which is an input means,
, 7703b, speakers 7704a, 7704b, which are audio output means, external connection port 7.
It may have 705, a microphone 7706, and the like. Further, the portable information terminal 7700 can be equipped with a flexible battery 7709. The battery 7709 is, for example, the display unit 7.
It may be arranged so as to overlap with 001.

The housing 7701, the display 7001, and the battery 7709 are flexible. for that reason,
It is easy to bend the mobile information terminal 7700 into a desired shape and to twist the mobile information terminal 7700. For example, the mobile information terminal 7700 can be used by bending the display unit 7001 so as to be inside or outside. Or, mobile information terminal 7700
Can also be used in a rolled state. In this way, the housing 7701 and the display unit 7
Since the 001 can be freely deformed, the portable information terminal 7700 has an advantage that it is not easily damaged even when it is dropped or an unintended external force is applied.

Further, since the portable information terminal 7700 is lightweight, it is used in various situations such as holding the upper part of the housing 7701 with a clip or the like and hanging it, or fixing the housing 7701 to a wall surface with a magnet or the like. Can be conveniently used in.

FIG. 23 (I) shows an example of a wristwatch-type personal digital assistant. The mobile information terminal 7800 has a band 7801, a display unit 7001, an input / output terminal 7802, an operation button 7803, and the like. The band 7801 has a function as a housing. Further, the portable information terminal 7800 can be equipped with a flexible battery 7805. The battery 7805 is, for example, the display unit 70.
It may be arranged so as to overlap with 01 or band 7801 or the like.

The band 7801, the display 7001 and the battery 7805 are flexible. Therefore, it is easy to bend the portable information terminal 7800 into a desired shape.

In addition to setting the time, the operation button 7803 can have various functions such as power on / off operation, wireless communication on / off operation, execution / cancellation of manner mode, execution / cancellation of power saving mode, and the like. .. For example, the function of the operation button 7803 can be freely set by the operating system incorporated in the mobile information terminal 7800.

Further, the application can be started by touching the icon 7804 displayed on the display unit 7001 with a finger or the like.

Further, the mobile information terminal 7800 can execute short-range wireless communication conforming to the communication standard. For example, by communicating with a headset capable of wireless communication, it is possible to make a hands-free call.

Further, the mobile information terminal 7800 may have an input / output terminal 7802. Input / output terminal 7
If you have 802, you can exchange data directly with other information terminals via the connector. It is also possible to charge via the input / output terminal 7802. The charging operation of the mobile information terminal illustrated in this embodiment may be performed by non-contact power transmission without going through the input / output terminals.

FIG. 24A shows the appearance of the automobile 7900. FIG. 24B shows the driver's seat of the automobile 7900. The automobile 7900 has a vehicle body 7901, wheels 7902, a windshield 7903, a light 7904, a fog lamp 7905, and the like.

The display device of one aspect of the present invention can be used for a display unit of an automobile 7900 or the like. For example, the display device 7910 to the display unit 7917 shown in FIG. 24B can be provided with the display device of one aspect of the present invention.

The display unit 7910 and the display unit 7911 are provided on the windshield of an automobile. In one aspect of the present invention, the electrode of the display device is made of a translucent conductive material, so that the display device in a so-called see-through state in which the opposite side can be seen through can be obtained. If the display device is in a see-through state, the visibility will not be obstructed even when the automobile 7900 is driven. Therefore, the display device of one aspect of the present invention can be installed on the windshield of the automobile 7900. When a transistor or the like is provided in the display device, it is preferable to use a transistor having translucency, such as an organic transistor using an organic semiconductor material or a transistor using an oxide semiconductor.

The display unit 7912 is provided on the pillar portion. The display unit 7913 is provided on the dashboard portion. For example, the view blocked by the pillars can be complemented by projecting the image from the image pickup means provided on the vehicle body on the display unit 7912. Similarly, the display unit 7
In 913, the view blocked by the dashboard can be complemented, and in the display unit 7914, the view blocked by the door can be complemented. That is, by projecting an image from an image pickup means provided on the outside of the automobile, the blind spot can be supplemented and the safety can be enhanced.
In addition, by projecting an image that complements the invisible part, it is possible to confirm safety more naturally and without discomfort.

Further, the display unit 7917 is provided on the handle. Display unit 7915, display unit 791
6. Or the display unit 7917 can provide various other information such as navigation information, speedometer, tachometer, mileage, refueling amount, gear state, air conditioner setting, and the like. In addition, the display items and layout displayed on the display unit can be appropriately changed according to the user's preference. The above information can also be displayed on the display unit 7910 to the display unit 7914.

The display unit 7910 to the display unit 7917 can also be used as a lighting device.

The display unit to which the display device of one aspect of the present invention is applied may be a flat surface. In this case, the display device according to one aspect of the present invention may have a curved surface and a configuration that does not have flexibility.

24 (C) and 24 (D) show an example of digital signage (electronic signage). The digital signage has a housing 8000, a display unit 8001, a speaker 8003, and the like. Further, it may have an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

FIG. 24D is a digital signage attached to a columnar pillar.

The wider the display unit 8001, the more information can be provided at one time. Further, the wider the display unit 8001, the easier it is for people to see, and for example, the advertising effect of the advertisement can be enhanced.

By applying the touch panel to the display unit 8001, not only the image or moving image can be displayed on the display unit 8001, but also the user can intuitively operate the display unit 8001, which is preferable. In addition, when used for the purpose of providing information such as route information or traffic information, usability can be improved by intuitive operation.

The portable game machine shown in FIG. 24E has a housing 8101, a housing 8102, and a display unit 8103.
, Display unit 8104, microphone 8105, speaker 8106, operation key 8107, stylus 8108, and the like.

The portable game machine shown in FIG. 24 (E) has two display units (display unit 8103 and display unit 810).
4). The number of display units included in the electronic device according to one aspect of the present invention is not limited to two, and may be one or three or more. When the electronic device has a plurality of display units, at least one display unit may have the display device of one aspect of the present invention.

FIG. 24F is a notebook personal computer, which has a housing 8111 and a display unit 811.
2. It has a keyboard 8113, a pointing device 8114, and the like.

A display device according to one aspect of the present invention can be applied to the display unit 8112.

FIG. 25A shows the appearance of the camera 8400 with the finder 8500 attached.

The camera 8400 has a housing 8401, a display unit 8402, an operation button 8403, a shutter button 8404, and the like. A detachable lens 8406 is attached to the camera 8400.

Here, the camera 8400 has a configuration in which the lens 8406 can be removed from the housing 8401 and replaced, but the lens 8406 and the housing may be integrated.

The camera 8400 can take an image by pressing the shutter button 8404. Further, the display unit 8402 has a function as a touch panel, and it is possible to take an image by touching the display unit 8402.

The housing 8401 of the camera 8400 has a mount with electrodes and a finder 850.
In addition to 0, a strobe device or the like can be connected.

The finder 8500 has a housing 8501, a display unit 8502, a button 8503, and the like.

The housing 8501 has a mount that engages with the mount of the camera 8400, and the finder 8500 can be attached to the camera 8400. Further, the mount has an electrode, and an image or the like received from the camera 8400 via the electrode can be displayed on the display unit 8502.

Button 8503 has a function as a power button. With the button 8503, the display of the display unit 8502 can be switched on / off.

The display device of one aspect of the present invention can be applied to the display unit 8402 of the camera 8400 and the display unit 8502 of the finder 8500.

In FIG. 25A, the camera 8400 and the finder 8500 are separate electronic devices, and these are detachable. However, the housing 8401 of the camera 8400 is provided with a display device of one aspect of the present invention. A finder may be built-in.

FIG. 25B shows the appearance of the head-mounted display 8200.

The head-mounted display 8200 has a mounting portion 8201, a lens 8202, and a main body 82.
It has 03, a display unit 8204, a cable 8205, and the like. Further, the battery 8206 is built in the mounting portion 8201.

The cable 8205 supplies electric power from the battery 8206 to the main body 8203. Body 82
03 is provided with a wireless receiver or the like, and can display video information such as received image data on the display unit 8204. Further, the camera provided on the main body 8203 captures the movement of the user's eyeball and eyelids, and the coordinates of the user's viewpoint are calculated based on the information, so that the user's viewpoint can be used as an input means. can.

Further, the mounting portion 8201 may be provided with a plurality of electrodes at positions where it touches the user. The main body 8203 detects the current flowing through the electrodes with the movement of the user's eyeball, thereby.
It may have a function of recognizing the viewpoint of the user. Further, it may have a function of monitoring the pulse of the user by detecting the current flowing through the electrode. In addition, the mounting unit 820
1 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function of displaying the biometric information of the user on the display unit 8204. Further, the movement of the head of the user may be detected and the image displayed on the display unit 8204 may be changed according to the movement.

A display device according to one aspect of the present invention can be applied to the display unit 8204.

25 (C) and 25 (D) show the appearance of the head-mounted display 8300.

The head-mounted display 8300 has a housing 8301, two display units 8302, an operation button 8303, and a band-shaped fixture 8304.

The head-mounted display 8300 includes two display units in addition to the functions of the head-mounted display 8200.

By having two display units 8302, the user can see one display unit per eye. As a result, a high-resolution image can be displayed even when performing a three-dimensional display using parallax or the like. Further, the display unit 8302 is curved in an arc shape centered substantially on the user's eyes. As a result, the distance from the user's eyes to the display surface of the display unit becomes constant, so that the user can see a more natural image. Further, even if the brightness and chromaticity of the light from the display unit change depending on the viewing angle, the user's eyes are positioned in the normal direction of the display surface of the display unit, so that the user's eyes are substantially located. Since the influence can be ignored, a more realistic image can be displayed.

The operation button 8303 has a function such as a power button. Further, it may have a button in addition to the operation button 8303.

Further, as shown in FIG. 25 (E), the lens 8305 may be provided between the display unit 8302 and the position of the user's eyes. The lens 8305 allows the user to magnify the display unit 8302, which further enhances the sense of presence. At this time, as shown in FIG. 25 (E), the dial 8306 may be provided to change the position of the lens for diopter adjustment.

A display device according to one aspect of the present invention can be applied to the display unit 8302. Since the display device of one aspect of the present invention has extremely high definition, even if the display device is magnified using the lens 8305 as shown in FIG. 25 (E), the pixels are not visually recognized by the user, and the display device has a more realistic feeling. It is possible to display high-quality images.

26 (A) to 26 (C) show an example in which one display unit 8302 is provided. With such a configuration, the number of parts can be reduced.

The display unit 8302 can display two images, one for the right eye and the other for the left eye, side by side in the two left and right areas, respectively. This makes it possible to display a stereoscopic image using binocular parallax.

Further, one image that can be visually recognized by both eyes may be displayed over the entire area of the display unit 8302. This makes it possible to display a panoramic image over both ends of the field of view.
Reality increases.

Further, as shown in FIG. 26 (C), the lens 8305 may be provided. The display unit 8302
Two images may be displayed side by side, or one image may be displayed on the display unit 8302 so that the same image can be seen by both eyes through the lens 8305.

This embodiment can be carried out in combination with at least a part thereof as appropriate in combination with other embodiments described in the present specification.

GL scanning line SL signal line V0 wiring ANODE current supply line M1 transistor M2 transistor M3 transistor M4 transistor M5 transistor MC capacitance element EL light emitting element CATHODE common wiring 100 transistor 102 substrate 104 insulation layer 106 conductive layer 108 oxide semiconductor layer 110 insulation layer 110t Film thickness 104t Thickness 112 Metal oxide layer 116 Insulation layer 108i Channel area 108s Source area 108d Drain area 141a Opening 141b Opening 120a Conductive layer 120b Conductive layer PIX pixel PIX_A pixel PIX_B pixel PIX_C pixel PIX_D pixel PIX_E pixel PIX_F pixel PIX_UL PIX_LL pixel PIX_LR pixel SUB substrate 151 conductive layer 152 conductive layer 153 conductive layer 154 insulating layer 161 oxide semiconductor layer 162 oxide semiconductor layer 163 insulating layer 171 metal oxide layer 172 metal oxide layer 173 metal oxide layer 174 insulating layer 181 Conductive layer 182 Conductive layer 183 Conductive layer 184 Conductive layer 186 Insulation layer 187 Insulation layer 188 Insulation layer 190 Opening GL_LC Scanning line GL_EL Scanning line SL_LC Signal line SL_EL Signal line M6 Transistor LC Liquid crystal element 191 Layer 192 Electrode 193 Opening 10 Device 11 Pixel unit 12 Scan line drive circuit 13 Signal line drive circuit 15 Terminal 16a Wiring 16b Wiring GL1 Scan line GL2 Scan line GL3 Scan line V1 Wiring 201 Board 202 Board 211 Insulation layer 212 Insulation layer 213 Insulation layer 214 Insulation layer 215 Spacer 216 Insulation layer 217 Insulation layer 218 Insulation layer 220 Adhesion layer 221 Insulation layer 222 EL layer 223 Electron 224 Optical adjustment layer 225 Pixel electrode 230a Structure 230b Structure 231 Light-shielding layer 232 Colored layer 242 FPC
243 Connection layer 250 Space 251 Transistor 252 Transistor 253 Capacitive element 254 Light emitting element 255 Transistor 260 Encapsulant 261 Adhesive layer 262 Adhesive layer 271 Semiconductor layer 272 Conductive layer 273 Conductive layer 274 Conductive layer 275 Conductive layer 276 Insulation layer 291 Conductive layer 292 Conductive Layer 293 Conductive layer 294 Insulation layer 295 Adhesive layer 296 Substrate 297 FPC
298 Connection layer 299 Terminal part 301 Fabrication board 303 Peeling layer 305 Peeling layer 307 Adhesive layer 321 Fabrication board 323 Peeling layer 325 Peeling layer 331 Board 333 Adhesive layer 341 Board 343 Adhesion layer 351 Area 7000 Display unit 7001 Display unit 7100 Mobile phone 7101 Housing 7103 Operation button 7104 External connection port 7105 Speaker 7106 Mike 7107 Camera 7110 Mobile phone 7200 Mobile information terminal 7201 Housing 7202 Operation button 7203 Information 7210 Mobile information terminal 7300 Television device 7301 Housing 7303 Stand 7311 Remote control operation device 7400 Lighting Device 7401 Base 7403 Operation switch 7411 Light emitting unit 7500 Portable information terminal 7501 Housing 7502 Member 7503 Operation button 7600 Mobile information terminal 7601 Housing 7602 Hinge 7650 Mobile information terminal 7651 Non-display unit 7700 Mobile information terminal 7701 Housing 7703a Button 7703b button 7704a Speaker 7704b Speaker 7705 External connection port 7706 Mike 7709 Battery 7800 Mobile information terminal 7801 Band 7802 Input / output terminal 7803 Operation button 7804 Icon 7805 Battery 7900 Car 7901 Body 7902 Wheel 7903 Front glass 7904 Light 7905 Fog lamp 7910 Display 7911 Display 7912 Display Unit 7913 Display unit 7914 Display unit 7915 Display unit 7916 Display unit 7917 Display unit 8000 Housing 8001 Display unit 8003 Speaker 8101 Housing 8102 Housing 8103 Display unit 8104 Display unit 8105 Microphone 8106 Speaker 8107 Operation key 8108 Stylus 8111 Housing 8112 Display Part 8113 Keyboard 8114 Pointing device 8200 Head mount display 8201 Mounting part 8202 Lens 8203 Main body 8204 Display part 8205 Cable 8206 Battery 8300 Head mount display 8301 Housing 8302 Display part 8303 Operation button 8304 Fixture 8305 Lens 8306 Dial 8400 Camera 8401 Housing 8402 Display 8403 Operation button 8404 Shutter button 8406 Lens 8500 Finder 8501 Housing 8502 Display Part 8503 button

Claims (2)

Light emitting element and
A first transistor having a function of controlling the input of an image signal to a pixel,
A second transistor having a function of controlling the supply of current to the light emitting element according to the image signal, and
With a capacitive element,
The second transistor is a display device in which one of the source and the drain is electrically connected to the first wiring and the other of the source and the drain is electrically connected to the light emitting element.
The second transistor has a first gate electrode, a semiconductor layer on the first gate electrode, and a second gate electrode on the semiconductor layer.
The capacitive element has a first electrode, a second electrode, and a third electrode.
The first conductive layer having a function as the first electrode has a function as the second gate electrode and has a function as the second gate electrode.
The semiconductor layer has a function as the second electrode and has a function as the second electrode.
The second conductive layer having a function as the third electrode has a function as the first wiring and is provided on the same layer as the first gate electrode. Light emitting element and
A first transistor having a function of controlling the input of an image signal to a pixel,
A second transistor having a function of controlling the supply of current to the light emitting element according to the image signal, and
With the third transistor,
With a capacitive element,
In the second transistor, one of the source and the drain is electrically connected to the first wiring, and the other of the source and the drain is electrically connected to the light emitting element.
The third transistor is a display device in which one of the source and the drain is electrically connected to the second wiring and the other of the source and the drain is electrically connected to the light emitting element.
The second transistor has a first gate electrode, a semiconductor layer on the first gate electrode, and a second gate electrode on the semiconductor layer.
The capacitive element has a first electrode, a second electrode, and a third electrode.
The first conductive layer having a function as the first electrode has a function as the second gate electrode and has a function as the second gate electrode.
The semiconductor layer has a function as the second electrode and has a channel forming region of the third transistor.
The second conductive layer having a function as the third electrode has a function as the first wiring and is provided on the same layer as the first gate electrode.

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