JP7021912B2 - Strain gauge - Google Patents

Description

The present invention relates to strain gauges.

Strain gauges that are attached to an object to be measured and detect the strain of the object to be measured are known. The strain gauge includes a resistor that detects strain, and as the material of the resistor, for example, a material containing Cr (chromium) or Ni (nickel) is used. Further, the resistor is formed on, for example, a base material made of an insulating resin (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2016-74934

In recent years, it has been required to increase the resistance of the resistor without increasing the planar shape of the strain gauge. be.

The present invention has been made in view of the above points, and an object of the present invention is to increase the resistance of a resistor without increasing the planar shape of the strain gauge.

The strain gauge has a flexible substrate and a resistor formed of a material containing at least one of chromium and nickel, wherein the resistor is formed on one side of the substrate. The first resistance portion and the second resistance portion formed on an insulating layer provided by covering one side of the base material with the first resistance portion are included, and the first resistance portion and the said The second resistance portion is connected in series via a via hole provided in the insulating layer to form a coil structure .

According to the disclosed technique, it is possible to increase the resistance of the resistor without increasing the planar shape of the strain gauge.

It is a top view which illustrates the strain gauge which concerns on 1st Embodiment. It is a top view which illustrates the pattern of the resistance part 31 in the strain gauge which concerns on 1st Embodiment. It is sectional drawing which illustrates the strain gauge which concerns on 1st Embodiment. It is a figure which illustrates the manufacturing process of the strain gauge which concerns on 1st Embodiment. It is a top view which illustrates the strain gauge which concerns on the modification 1 of 1st Embodiment. It is a top view which illustrates the pattern of the resistance part 33 in the strain gauge which concerns on the modification 1 of 1st Embodiment. It is sectional drawing which illustrates the strain gauge which concerns on the modification 1 of 1st Embodiment. It is sectional drawing which illustrates the strain gauge which concerns on the modification 2 of 1st Embodiment.

Hereinafter, embodiments for carrying out the invention will be described with reference to the drawings. In each drawing, the same components may be designated by the same reference numerals and duplicate explanations may be omitted.

<First Embodiment>
FIG. 1 is a plan view illustrating the strain gauge according to the first embodiment. FIG. 2 is a plan view illustrating the pattern of the resistance portion 31 in the strain gauge according to the first embodiment. FIG. 3 is a cross-sectional view illustrating the strain gauge according to the first embodiment, and shows a cross-sectional view taken along the line AA of FIGS. 1 and 2. Referring to FIGS. 1 to 3, the strain gauge 1 has a base material 10, an insulating layer 11, resistors 30 (resistance portions 31 and 32), and a terminal portion 41.

In the present embodiment, for convenience, in the strain gauge 1, the side of the base material 10 where the resistance portions 31 and 32 are provided is on the upper side or one side, and the side where the resistance portions 31 and 32 are not provided is on the lower side. One side or the other side. Further, the surface on the side where the resistance portions 31 and 32 are provided is one surface or the upper surface, and the surface on the side where the resistance portions 31 and 32 are not provided is the other surface or the lower surface. However, the strain gauge 1 can be used in an upside-down state, or can be arranged at an arbitrary angle. Further, the plan view refers to viewing the object from the normal direction of the upper surface 10a of the base material 10, and the planar shape refers to the shape of the object viewed from the normal direction of the upper surface 10a of the base material 10. And.

The base material 10 is a member that serves as a base layer for forming the resistor 30 and the like, and has flexibility. The thickness of the base material 10 is not particularly limited and may be appropriately selected depending on the intended purpose, but may be, for example, about 5 μm to 500 μm. In particular, when the thickness of the base material 10 is 5 μm to 200 μm, strain transmission from the surface of the strain-causing body bonded to the lower surface of the base material 10 via an adhesive layer or the like and dimensional stability with respect to the environment are taken into consideration. It is preferably 10 μm or more, and more preferably 10 μm or more in terms of insulating property.

The base material 10 is, for example, PI (polyethylene) resin, epoxy resin, PEEK (polyetheretherketone) resin, PEN (polyethylenenaphthalate) resin, PET (polyethylene terephthalate) resin, PPS (polyphenylene sulfide) resin, polyolefin resin and the like. It can be formed from the insulating resin film of. The film is a member having a thickness of about 500 μm or less and having flexibility.

Here, "forming from an insulating resin film" does not prevent the base material 10 from containing a filler, impurities, or the like in the insulating resin film. The base material 10 may be formed of, for example, an insulating resin film containing a filler such as silica or alumina.

The resistor 30 is formed on the base material 10 and is a sensitive portion that undergoes strain to cause a change in resistance. The resistor 30 includes a resistance portion 31 and a resistance portion 32 laminated via an insulating layer 11. That is, the resistor 30 is a general term for the resistance portions 31 and 32, and is referred to as a resistor 30 when it is not necessary to particularly distinguish the resistance portions 31 and 32. In addition, in FIGS. 1 and 2, for convenience, the resistance portion 31 and the resistance portion 32 are shown in a satin pattern.

The resistance portion 31 is a thin film formed in a predetermined pattern on the upper surface 10a side of the base material 10. The resistance portion 31 is connected in series with the resistance portion 32 to form the resistor 30 as a whole. The resistance portion 31 may be formed directly on the upper surface 10a of the base material 10 or may be formed on the upper surface 10a of the base material 10 via another layer.

The insulating layer 11 is formed so as to cover the upper surface 10a of the base material 10 with the resistance portion 31. The thickness of the insulating layer 11 is not particularly limited and may be appropriately selected depending on the intended purpose, but may be, for example, about 5 μm to 500 μm. The material of the insulating layer 11 can be appropriately selected from the materials exemplified as the material of the base material 10, for example. However, the insulating layer 11 does not necessarily have to be formed of the same material as the base material 10, and for example, the base material 10 may be a polyimide resin, the insulating layer 11 may be an epoxy resin, or the like.

The resistance portion 32 is a thin film formed in a predetermined pattern on the upper surface 11a side of the insulating layer 11. The resistance portion 32 may be formed directly on the upper surface 11a of the insulating layer 11 or may be formed on the upper surface 11a of the insulating layer 11 via another layer.

One end of the resistance portion 32 is electrically connected to one of the terminal portions 41. The other end of the resistance portion 32 is electrically connected to one end of the resistance portion 31 exposed in the via hole 11x via the via hole 11x penetrating the insulating layer 11. The other end of the resistance portion 32 is continuously formed on, for example, from the upper surface 11a of the insulating layer 11 to the side wall of the via hole 11x and the upper surface of one end of the resistance portion 31 exposed in the via hole 11x, and one end of the resistance portion 31. Is electrically connected to. The resistance portion 32 may be filled with the via hole 11x. The position of the via hole 11x is indicated by a solid circle in FIG. 1 and a broken line circle in FIG. 2 for convenience.

The resistor 30 (resistance portion 31 and resistance portion 32) can be formed from, for example, a material containing Cr (chromium), a material containing Ni (nickel), or a material containing both Cr and Ni. That is, the resistor 30 can be formed from a material containing at least one of Cr and Ni. Examples of the material containing Cr include a Cr mixed phase film. Examples of the material containing Ni include Ni—Cu (nickel copper). Examples of the material containing both Cr and Ni include Ni—Cr (nickel chromium).

Here, the Cr mixed phase film is a film in which Cr, CrN, Cr 2N and the like _are mixed. The Cr mixed phase film may contain unavoidable impurities such as chromium oxide.

The thickness of the resistor 30 is not particularly limited and may be appropriately selected depending on the intended purpose, but may be, for example, about 0.05 μm to 2 μm. In particular, when the thickness of the resistor 30 is 0.1 μm or more, the crystallinity of the crystals constituting the resistor 30 (for example, the crystallinity of α-Cr) is improved, and when it is 1 μm or less, the resistor is preferable. It is more preferable in that cracks in the film and warpage from the base material 10 due to the internal stress of the film constituting 30 can be reduced.

For example, when the resistor 30 is a Cr mixed phase film, the stability of the gauge characteristics can be improved by using α-Cr (alpha chromium), which is a stable crystal phase, as a main component. Further, since the resistor 30 contains α-Cr as a main component, the gauge ratio of the strain gauge 1 is 10 or more, and the gauge coefficient temperature coefficient TCS and the resistance temperature coefficient TCR are within the range of −1000 ppm / ° C. to + 1000 ppm / ° C. Can be. Here, the main component means that the target substance occupies 50% by mass or more of all the substances constituting the resistor, but from the viewpoint of improving the gauge characteristics, the resistor 30 contains 80% by weight of α-Cr. It is preferable to include the above. In addition, α-Cr is Cr of a bcc structure (body-centered cubic lattice structure).

The terminal portion 41 is formed on the upper surface 11a side of the insulating layer 11. The terminal portion 41 may be formed directly on the upper surface 11a of the insulating layer 11 or may be formed on the upper surface 11a of the insulating layer 11 via another layer. The terminal portion 41 is a pair of electrodes for outputting a change in the resistance value of the resistor 30 caused by strain to the outside, and for example, a lead wire for external connection is joined.

One of the terminal portions 41 is electrically connected to one end of the resistance portion 32. Further, the other end of the terminal portion 41 is electrically connected to the other end portion of the resistance portion 31 via the via hole 11y. The other end of the terminal portion 41 is continuously formed from the upper surface 11a of the insulating layer 11 to the side wall of the via hole 11y and the upper surface of the other end portion of the resistance portion 31 exposed in the via hole 11y, and is electrically connected to the other end portion of the resistance portion 31. Is connected. The terminal portion 41 may be filled with the via hole 11y. The position of the via hole 11y is indicated by a solid circle in FIG. 1 and a broken line circle in FIG. 2 for convenience.

In a plan view, the terminal portion 41 is wider than the resistance portion 31 and the resistance portion 32 and is formed in a substantially rectangular shape. The resistance portion 32 extends in a zigzag manner and is connected in series.

Although the resistance portion 32 and the terminal portion 41 have different reference numerals for convenience, both can be integrally formed of the same material in the same process. The upper surface of the terminal portion 41 may be coated with a metal having better solderability than the terminal portion 41.

A cover layer 60 (insulating resin layer) may be provided on the upper surface 11a of the insulating layer 11 so as to cover the resistance portion 32 and expose the terminal portion 41. By providing the cover layer 60, it is possible to prevent the resistor 30 from being mechanically damaged or the like. Further, by providing the cover layer 60, the resistor 30 can be protected from moisture and the like. The cover layer 60 may be provided so as to cover the entire portion excluding the terminal portion 41.

The cover layer 60 can be formed of, for example, an insulating resin such as PI resin, epoxy resin, PEEK resin, PEN resin, PET resin, PPS resin, and composite resin (for example, silicone resin and polyolefin resin). The cover layer 60 may contain a filler or a pigment. The thickness of the cover layer 60 is not particularly limited and may be appropriately selected depending on the intended purpose, but may be, for example, about 2 μm to 30 μm.

FIG. 4 is a diagram illustrating the manufacturing process of the strain gauge according to the first embodiment, and shows a cross section corresponding to FIG.

In order to manufacture the strain gauge 1, first, in the step shown in FIG. 4A, the base material 10 is prepared, and the planar resistance portion 31 shown in FIG. 2 is formed on the upper surface 10a of the base material 10. The material and thickness of the resistance portion 31 are as described above.

The resistance portion 31 can be formed, for example, by forming a film by a magnetron sputtering method targeting a raw material capable of forming the resistance portion 31 and patterning it by photolithography. The resistance portion 31 may be formed into a film by using a reactive sputtering method, a vapor deposition method, an arc ion plating method, a pulsed laser deposition method, or the like, instead of the magnetron sputtering method.

From the viewpoint of stabilizing the gauge characteristics, before forming the resistance portion 31, a functional layer having a film thickness of about 1 nm to 100 nm is vacuum-formed on the upper surface 10a of the base material 10 as a base layer by, for example, a conventional sputtering method. It is preferable to form a film. The functional layer is patterned in the planar shape shown in FIG. 2 together with the resistance portion 31 by photolithography after forming the resistance portion 31 on the entire upper surface of the functional layer.

In the present application, the functional layer refers to a layer having a function of promoting crystal growth of at least the upper resistance portion (resistance portion 31 or resistance portion 32). The functional layer further has a function of preventing oxidation of the upper resistance portion due to oxygen and moisture contained in the base material 10 and the like, and a function of improving the adhesion between the base material 10 and the like and the upper resistance portion. Is preferable. The functional layer may further have other functions.

Since the insulating resin film constituting the base material 10 contains oxygen and water, particularly when the resistance portion 31 contains Cr, Cr forms a self-oxidizing film, so that the functional layer has a function of preventing oxidation of the resistance portion 31. It is effective to prepare.

The material of the functional layer is not particularly limited as long as it has a function of promoting crystal growth of at least the upper resistance portion 31, and can be appropriately selected depending on the intended purpose. For example, Cr (chromium), Ti ( Titanium), V (vanadium), Nb (niobium), Ta (tantal), Ni (nickel), Y (ittrium), Zr (zylonium), Hf (hafnium), Si (silicon), C (carbon), Zn ( Zinc), Cu (copper), Bi (bismas), Fe (iron), Mo (molybdenum), W (tungsten), Ru (lutenium), Rh (lodium), Re (renium), Os (osmium), Ir ( One or more selected from the group consisting of iridium), Pt (platinum), Pd (palladium), Ag (silver), Au (gold), Co (cobalt), Mn (manganese), Al (aluminum). Examples include metals, alloys of any of the metals in this group, or compounds of any of the metals in this group.

Examples of the above alloy include FeCr, TiAl, FeNi, NiCr, CrCu and the like. Examples of the above _{-mentioned compound include TiN, TaN, Si 3N 4, TiO 2, Ta 2 O 5, SiO 2 , and the like .}

The functional layer can be formed into a vacuum by, for example, a conventional sputtering method in which Ar (argon) gas is introduced into a chamber, targeting a raw material capable of forming the functional layer. By using the conventional sputtering method, the functional layer is formed while etching the upper surface 10a of the base material 10 with Ar, so that the film forming amount of the functional layer can be minimized and the adhesion improving effect can be obtained.

However, this is an example of a method for forming a functional layer, and the functional layer may be formed by another method. For example, the effect of improving adhesion is obtained by activating the upper surface 10a of the base material 10 by plasma treatment using Ar or the like before the film formation of the functional layer, and then the functional layer is vacuum-deposited by the magnetron sputtering method. You may use the method of

The combination of the material of the functional layer and the material of the resistance portion 31 is not particularly limited and may be appropriately selected depending on the intended purpose. For example, Ti is used as the functional layer and α-Cr (alpha chromium) is used as the resistance portion 31. It is possible to form a Cr mixed-phase film as a main component.

In this case, for example, the resistance portion 31 can be formed by a magnetron sputtering method in which Ar gas is introduced into the chamber, targeting a raw material capable of forming a Cr mixed phase film. Alternatively, pure Cr may be targeted, an appropriate amount of nitrogen gas may be introduced into the chamber together with Ar gas, and the resistance portion 31 may be formed by a reactive sputtering method.

In these methods, the growth surface of the Cr mixed-phase film is defined by the functional layer made of Ti, and a Cr mixed-phase film containing α-Cr as a main component, which has a stable crystal structure, can be formed. Further, the gauge characteristics are improved by diffusing Ti constituting the functional layer into the Cr mixed phase film. For example, the gauge ratio of the strain gauge 1 can be 10 or more, and the gauge ratio temperature coefficient TCS and the resistance temperature coefficient TCR can be in the range of −1000 ppm / ° C. to + 1000 ppm / ° C. When the functional layer is formed of Ti, the Cr mixed phase film may contain Ti or TiN (titanium nitride).

When the resistance portion 31 is a Cr mixed phase film, the functional layer made of Ti has a function of promoting crystal growth of the resistance portion 31 and a function of preventing oxidation of the resistance portion 31 by oxygen and moisture contained in the base material 10. , And all the functions of improving the adhesion between the base material 10 and the resistance portion 31. The same applies when Ta, Si, Al, or Fe is used instead of Ti as the functional layer.

By providing the functional layer under the resistance portion 31 in this way, it becomes possible to promote the crystal growth of the resistance portion 31, and the resistance portion 31 made of a stable crystal phase can be produced. As a result, in the strain gauge 1, the stability of the gauge characteristics can be improved. Further, the material constituting the functional layer diffuses into the resistance portion 31, so that the gauge characteristics of the strain gauge 1 can be improved.

Next, in the step shown in FIG. 4B, the insulating layer 11 covering the resistance portion 31 is formed on the upper surface 10a of the base material 10. The material and thickness of the insulating layer 11 are as described above. The insulating layer 11 can be produced, for example, by laminating a thermosetting insulating resin film in a semi-cured state on the upper surface 10a of the base material 10 so as to cover the resistance portion 31 and heating and curing the insulating layer 11. The insulating layer 11 may be produced by applying a liquid or paste-like thermosetting insulating resin to the upper surface 10a of the base material 10 so as to cover the resistance portion 31 and heating and curing the insulating layer 11.

After forming the insulating layer 11, a via hole 11x that penetrates the insulating layer 11 and exposes the upper surface of one end of the resistance portion 31 and a via hole 11y that penetrates the insulating layer 11 and exposes the upper surface of the other end of the resistance portion 31 are formed. do. The via holes 11x and 11y can be formed by, for example, a laser processing method. A photosensitive resin may be used as the insulating layer 11, and via holes 11x and 11y may be formed by photolithography. Alternatively, the insulating resin film having the via holes 11x and 11y formed in advance may be laminated and heated to be cured to form the insulating layer 11 having the via holes 11x and 11y.

Next, in the step shown in FIG. 4C, the resistance portion 32 and the terminal portion 41 are formed on the upper surface 11a of the insulating layer 11. The resistance portion 32 is continuously formed from the upper surface 11a of the insulating layer 11 to the side wall of the via hole 11x and the upper surface of one end of the resistance portion 31 exposed in the via hole 11x, and is electrically connected to one end of the resistance portion 31. To. The resistance portion 32 may be filled with the via hole 11x. Similarly, the terminal portion 41 is continuously formed from the upper surface 11a of the insulating layer 11 to the side wall of the via hole 11y and the upper surface of the other end of the resistance portion 31 exposed in the via hole 11y, and is formed with the other end of the resistance portion 31. It is electrically connected. The terminal portion 41 may be filled with the via hole 11y.

The materials and thicknesses of the resistance portion 32 and the terminal portion 41 are as described above. The resistance portion 32 and the terminal portion 41 can be formed by the same method as the resistance portion 31. For the same reason as the resistance portion 31, before the resistance portion 32 and the terminal portion 41 are formed into a film, the upper surface 11a of the insulating layer 11 has a function of having a film thickness of about 1 nm to 100 nm by, for example, a conventional sputter method as a base layer. It is preferable to form the layer in a vacuum. The functional layer is formed with a resistance portion 32 and a terminal portion 41 on the entire upper surface of the functional layer, and then patterned in a planar shape shown in FIG. 1 together with the resistance portion 32 and the terminal portion 41 by photolithography.

After forming the resistance portion 32 and the terminal portion 41, the strain gauge 1 is completed by providing a cover layer 60 that covers the resistance portion 32 and exposes the terminal portion 41 on the upper surface 11a of the insulating layer 11 as needed. The cover layer 60 is, for example, laminated with a thermosetting insulating resin film in a semi-cured state so as to cover the resistance portion 32 and expose the terminal portion 41 on the upper surface 11a of the insulating layer 11, and heat and cure the cover layer 60. Can be made. The cover layer 60 is produced by coating the upper surface 11a of the insulating layer 11 with a liquid or paste-like thermosetting insulating resin so as to cover the resistance portion 32 and expose the terminal portion 41, and heating and curing the cover layer 60. You may.

In this way, by forming the resistor 30 into a multi-layer structure including the resistance portions 31 and the resistance portions 32 laminated via the insulating layer 11, the resistor 30 can be formed without enlarging the planar shape of the strain gauge 1. High resistance can be achieved. Further, by increasing the resistance of the resistor 30, the power consumption of the strain gauge 1 can be reduced. That is, a compact strain gauge 1 can be realized with low power consumption provided with the resistor 30 having high resistance.

Further, since the strain gauge 1 is small, even if the resistor 30 has a high resistance, it is not easily affected by a high frequency from the outside.

Further, for example, when the resistance portion 31 and the resistance portion 32 are connected in series on the same plane, the planar shape of the strain gauge becomes large, so that only the average strain of the object to be measured can be measured. In the strain gauge 1, the resistance is increased by forming the resistor 30 in a multilayer structure in which a plurality of resistance portions are laminated, and the planar shape is not expanded (when the resistor has only one layer of resistance portions). Because it has the same planar shape as), it is possible to measure the strain in a relatively narrow range of the object to be measured.

Further, since the strain gauge 1 is small, it is possible to increase the number of sheets taken from the same sheet, and it is possible to improve productivity.

<Modification 1 of the first embodiment>
Modification 1 of the first embodiment shows an example of a strain gauge having a different resistance pattern from that of the first embodiment. In the first modification of the first embodiment, the description of the same component as that of the above-described embodiment may be omitted.

FIG. 5 is a plan view illustrating the strain gauge according to the first modification of the first embodiment. FIG. 6 is a plan view illustrating the pattern of the resistance portion 33 in the strain gauge according to the first modification of the first embodiment. FIG. 7 is a cross-sectional view illustrating the strain gauge according to the first modification of the first embodiment, and shows a cross-sectional view taken along the line BB of FIGS. 5 and 6. With reference to FIGS. 5 to 7, in the strain gauge 1A, the resistance 30A including the resistance portion 31 and the resistance portion 32 is replaced with the resistor 30A including the resistance portion 33 and the resistance portion 34. It is different from 1 (see FIGS. 1 to 3 and the like).

The resistance portion 33 has seven patterns arranged side by side at predetermined intervals. Further, the resistance portion 34 has six patterns arranged side by side at predetermined intervals. Further, each pattern of the resistance portion 33 has a portion inclined with respect to the longitudinal direction of each pattern of the resistance portion 34.

Both ends of each pattern of the resistance portion 34 are electrically connected to each pattern of the resistance portion 33 at overlapping positions in a plan view via a via hole 11x penetrating the insulating layer 11. The position of the via hole 11x is shown by a solid circle in FIG. 5 and a broken line circle in FIG. 6 for convenience.

The terminal portion 41 is electrically connected to both ends of the resistance portion 33 exposed in the via hole 11y via the via hole 11y penetrating the insulating layer 11. The position of the via hole 11y is indicated by a solid circle in FIG. 5 and a broken line circle in FIG. 6 for convenience.

Both ends of each pattern of the resistance portion 34 are electrically connected to each pattern of the resistance portion 33 at a position overlapping in a plan view via the via hole 11x, and the terminal portion 41 is connected to both ends of the resistance portion 33 via the via hole 11y. By electrically connecting to the portions, a coil structure, which is a three-dimensional pattern, is formed between the pair of terminal portions 41. The number of patterns of the resistance unit 33 and the resistance unit 34 can be appropriately determined as needed.

As described above, the pattern of each resistance portion may be in any form as long as it is connected in series to form one resistor. In the pattern of the resistor 30A forming the coil structure, the folded portion of the pattern is eliminated and the structure is only a linear pattern. Therefore, the pattern is broken due to fatigue as compared with the pattern having the folded portion like the resistor 30. The risk can be reduced.

<Modification 2 of the first embodiment>
Modification 2 of the first embodiment shows an example of a strain gauge having a different laminated structure from that of the first embodiment. In the second modification of the first embodiment, the description of the same component as that of the above-described embodiment may be omitted.

FIG. 8 is a cross-sectional view illustrating the strain gauge according to the modified example 2 of the first embodiment, and shows a cross section corresponding to FIG. Referring to FIG. 8, the strain gauge 1B is different from the strain gauge 1 (see FIGS. 1 to 3 and the like) in that the strain gauge 1B does not have the insulating layer 11.

In the strain gauge 1B, the resistance portion 31 is formed on the lower surface 10b side of the base material 10 in a predetermined pattern (for example, the same pattern as in FIG. 2). The resistance portion 31 is connected in series with the resistance portion 32 to form the resistor 30 as a whole. The resistance portion 31 may be formed directly on the lower surface 10b of the base material 10 or may be formed on the lower surface 10b of the base material 10 via another layer.

The resistance portion 32 is formed on the upper surface 10a side of the base material 10 in a predetermined pattern (for example, the same pattern as in FIG. 1). The resistance portion 32 may be formed directly on the upper surface 10a of the base material 10 or may be formed on the upper surface 10a of the base material 10 via another layer.

Similar to the first embodiment, one end of the resistance portion 32 is electrically connected to one of the terminal portions 41. The other end of the resistance portion 32 is electrically connected to one end of the resistance portion 31 exposed in the via hole 10x via the via hole 10x penetrating the base material 10. The other end of the resistance portion 32 is formed continuously, for example, from the upper surface 10a of the base material 10 to the side wall of the via hole 10x and the upper surface of one end of the resistance portion 31 exposed in the via hole 10x, and the other end of the resistance portion 31 is formed. Is electrically connected to. The resistance portion 32 may be filled with the via hole 10x.

The terminal portion 41 is formed on the upper surface 10a side of the base material 10. The terminal portion 41 may be formed directly on the upper surface 10a of the base material 10 or may be formed on the upper surface 10a of the base material 10 via another layer. Although the resistance portion 32 and the terminal portion 41 have different reference numerals for convenience, both can be integrally formed of the same material in the same process. The upper surface of the terminal portion 41 may be coated with a metal having better solderability than the terminal portion 41.

Similar to the first embodiment, one of the terminal portions 41 is electrically connected to one end of the resistance portion 32. Further, the other end of the resistance portion 32 is electrically connected to one end of the resistance portion 31 via the via hole 10x. Further, the other end of the resistance portion 31 is electrically connected to the other end of the terminal portion 41 via the via hole 10y.

The other end of the terminal portion 41 is continuously formed from the upper surface 10a of the base material 10 to the side wall of the via hole 10y and the upper surface of the other end portion of the resistance portion 31 exposed in the via hole 10y, and the other end portion of the resistance portion 31 is formed. Is electrically connected to. The terminal portion 41 may be filled with the via hole 10y.

The material and thickness of the resistance portion 31, the resistance portion 32, and the terminal portion 41, a manufacturing method, a point that it is preferable to form a functional layer as a base layer, and the like are the same as those in the first embodiment.

A cover layer 61 (insulating resin layer) is provided on the upper surface 10a of the base material 10 so as to cover the resistance portion 32 and expose the terminal portion 41, and the cover layer 62 is provided on the lower surface 10b of the base material 10 so as to cover the resistance portion 31. (Insulating resin layer) may be provided. By providing the cover layers 61 and 62, it is possible to prevent mechanical damage or the like from occurring in the resistor 30. Further, by providing the cover layers 61 and 62, the resistor 30 can be protected from moisture and the like. The cover layer 61 may be provided so as to cover the entire portion excluding the terminal portion 41. The materials and thicknesses of the cover layers 61 and 62 can be, for example, the same as those of the cover layer 60. The cover layer 61 and the cover layer 62 may be formed of different materials, or the cover layer 61 and the cover layer 62 may be formed of different thicknesses.

In this way, resistance portions may be provided on the upper and lower surfaces of the base material 10 and connected in series via via holes penetrating the base material 10. In this case, the formation of the insulating layer 11 can be omitted. It is also possible to modify the modification 1 of the first embodiment in the same manner as the modification 2 of the first embodiment.

Although the preferred embodiments and the like have been described in detail above, they are not limited to the above-described embodiments and the like, and various embodiments and the like described above can be applied without departing from the scope of the claims. Modifications and substitutions can be added.

For example, the resistance portions constituting the resistors 30 and 30A are not limited to two layers, and may be three or more layers. In this case, the insulating layer and the resistance portion may be alternately laminated, and the adjacent resistance portions may be connected in series via the via holes provided in the insulating layer. This makes it possible to further increase the resistance of the resistors 30 and 30A without enlarging the planar shape of the strain gauge.

1, 1A, 1B strain gauge, 10 base material, 10a, 11a top surface, 10b bottom surface, 10x, 10y, 11x, 11y via hole, 11 insulation layer, 30, 30A resistor, 31, 32, 33, 34 resistance section, 41 Terminals, 60, 61, 62 Cover layer

Claims (8)

With a flexible substrate,
With a resistor formed from a material containing at least one of chromium and nickel,
The resistor includes a first resistance portion formed on one side of the base material and a first resistance portion.
A second resistance portion formed on an insulating layer provided by covering one side of the first resistance portion with the first resistance portion is included.
The first resistance portion and the second resistance portion are strain gauges that are connected in series via via holes provided in the insulating layer to form a coil structure . With a flexible substrate,
With a resistor formed from a material containing at least one of chromium and nickel,
The resistor includes a first resistance portion formed on one side of the substrate and a second resistance portion formed on the other side of the substrate.
The first resistance portion and the second resistance portion are strain gauges that are connected in series via via holes provided in the base material to form a coil structure . The strain gauge according to claim 1 or 2 , wherein the resistor is mainly composed of alpha chromium. The strain gauge according to claim 3 , wherein the resistor contains 80% by weight or more of alpha chromium. The strain gauge according to claim 3 or 4 , wherein the resistor contains chromium nitride. The strain gauge according to any one of claims 1 to 5 , wherein the lower layer of the resistor has a functional layer formed of a metal, an alloy, or a compound of a metal. The strain gauge according to claim 6 , wherein the functional layer has a function of promoting crystal growth of the resistor. The strain gauge according to any one of claims 1 to 7 , which has an insulating resin layer that covers the resistance portion that is the outermost layer of the resistance portions included in the resistor.

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