JP7002542B2 - 化学蒸着反応器の中にガスを搬送するための装置 - Google Patents
化学蒸着反応器の中にガスを搬送するための装置 Download PDFInfo
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32908—Utilities
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Description
- 連続する導電性部分を非等距離に配置することによって、又は言い換えれば、導電性部分間に可変若しくは異なる長さの絶縁部分を挿入することによって、及び/又は
- 異なる絶縁部分に対して異なる電位差を発生させるように導電性部分に電位を印加することによって
変調されることができる。この目的のために、例えば、分圧器は、異なる値の連続する電気インピーダンスモジュールと共に使用されることができる。
- 導管の全部又は一部において同じ長さを有する絶縁部分、及び/又は
- 導管の全部又は一部に亘って同じ値の連続する電気インピーダンスモジュール
で実施されることができる。
- ガス流の方向(すなわち反対でない方向)に対して(少なくとも)オフセットされたガス入口及びガス出口
- ガス流の方向に対して(少なくとも)オフセットされたガス入口及びガス出口を有する円筒形の断面(又は他の任意の種類の断面)を有する空洞
を含むことができる。図2に示される別の実施形態によれば、導電性部分11は、例えば1つ以上の顕著な屈曲部を備え、且つガス流の方向に対してオフセットされたガス入口及びガス出口を接続する、非直線110貫通チャネルの形態の貫通チャンバを備える。当然ながら、言及された幾何学形状、特に図2に提示される幾何学形状は、特定の実施形態にのみ対応し、当業者は、注入条件及びプラズマ発生の危険性に従ってガス経路を調整することができる。
Claims (15)
- 化学蒸着反応器の中にガスを搬送するためのガス流装置(1)であって、
無線周波数電位(V5)で分極されながら前記反応器の中に開口する第1の端部(4)と、基準電位(V0)で電気的に分極された第2の端部(3)とを有する導管(2)を備え、
前記導管は、少なくとも1つの導電性部分(11)及び電気絶縁部分(12)を備え、前記少なくとも1つの導電性部分(11)及び前記電気絶縁部分(12)は、前記導管の異なる区分を形成し、導電性部分の両側に電気絶縁部分があるように配置され、前記少なくとも1つの導電性部分は、前記導管を流れる前記ガスと接触するように配置され、
前記装置は、前記無線周波数電位と前記基準電位との間の中間電位で前記導管における前記ガスを局所的に分極するように、前記第1の端部と前記第2の端部との間で前記導管(2)に少なくとも1つの決定された電位を局所的に印加するための電位印加手段(10a~10e)を更に備えることを特徴とする、装置。 - 前記電位印加手段は、前記導管の一部に電位を課すように配置された少なくとも1つの電圧源を備えることを特徴とする、請求項1に記載の装置。
- 前記電位印加手段は、2つの端子に従って前記導管の前記第1の端部及び前記第2の端部の電位にそれぞれ電気的に接続された分圧器を備え、前記分圧器は、直列に接続された複数の電気インピーダンスモジュールを備え、2つの連続する電気インピーダンスモジュール間の少なくとも1つの接合部は、前記導管に電気的に接続されていることを特徴とする、請求項1に記載の装置。
- 前記装置は、抵抗、インダクタ、コイル、キャパシタという構成要素のうちの少なくとも1つを有する電気インピーダンスモジュールを備えることを特徴とする、請求項3に記載の装置。
- 前記導管は、前記導管の断面の形状を有する電気絶縁部分を備えることを特徴とする、請求項1に記載の装置。
- 前記導管は、前記導管の断面の形状を有する導電性部分を備えることを特徴とする、請求項1~5の何れか一項に記載の装置。
- 前記導管は、実質的に均一の内側断面を有することを特徴とする、請求項1~6の何れか一項に記載の装置。
- 前記導管は、管断面の形状を有する電気絶縁部分を備えることを特徴とする、請求項1~7の何れか一項に記載の装置。
- 前記導管は、ガス流のための少なくとも1つの貫通チャンバ(110)を有する、導電性材料から作られた部品の形状を有する少なくとも1つの導電性部分を備えることを特徴とする、請求項1~8の何れか一項に記載の装置。
- 前記貫通チャンバは、前記導電性部分において非直線ガス経路を画定することを特徴とする、請求項9に記載の装置。
- 前記導管は、ガス流を可能にする複数の開口を有する、導電性材料から作られた部品の形状を有する少なくとも1つの導電性部分を備えることを特徴とする、請求項1~10の何れか一項に記載の装置。
- 化学蒸着法を実施するための反応器であって、反応チャンバと少なくとも1つの請求項1~11の何れか一項に記載のガス流装置とを備えることを特徴とする反応器。
- 前記反応器は2つの電極を備え、その第1の電極が無線周波数源に接続され、且つその第2の電極が接地されて、前記第1の電極と前記第2の電極との間の電位差が、前記反応器の中に注入された前記ガスのプラズマを形成することを可能にすることを特徴とする、請求項12に記載の反応器。
- 化学蒸着反応器にガスを搬送するためのガス流装置におけるプラズマ形成を防止するための方法であって、前記ガス流装置は、無線周波数電位(V5)で分極されながら前記反応器の中に開口する第1の端部と、基準電位(V0)で電気的に分極された第2の端部とを有する導管を備え、
前記導管は、少なくとも1つの導電性部分(11)及び電気絶縁部分(12)を備え、前記少なくとも1つの導電性部分(11)及び前記電気絶縁部分(12)は、前記導管の異なる区分を形成し、導電性部分の両側に電気絶縁部分があるように配置され、前記少なくとも1つの導電性部分は、前記導管を流れる前記ガスと接触するように配置され、
前記方法は、前記無線周波数電位と前記基準電位との間の中間電位に前記導管における前記ガスを局所的に分極するように、前記第1の端部と前記第2の端部との間で前記導管に少なくとも1つの決定された電位を局所的に印加するステップを含むことを特徴とする、方法。 - 化学蒸着のための方法であって、前記方法は、請求項12又は13に記載の反応器において実施され、請求項1~11の何れか一項に記載のガス流装置を介して、前記反応器の反応チャンバに予め位置決めされた基板の表面における反応のためのガスを注入するステップを含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1659559 | 2016-10-04 | ||
FR1659559A FR3056993B1 (fr) | 2016-10-04 | 2016-10-04 | Dispositif pour amener un gaz dans un reacteur de depot chimique en phase gazeuse |
PCT/EP2017/074799 WO2018065315A1 (fr) | 2016-10-04 | 2017-09-29 | Dispositif pour amener un gaz dans un reacteur de depot chimique en phase gazeuse |
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JP2019533085A JP2019533085A (ja) | 2019-11-14 |
JP2019533085A5 JP2019533085A5 (ja) | 2020-07-30 |
JP7002542B2 true JP7002542B2 (ja) | 2022-02-21 |
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US (1) | US20200347500A1 (ja) |
EP (1) | EP3523457B1 (ja) |
JP (1) | JP7002542B2 (ja) |
KR (1) | KR102430407B1 (ja) |
CN (1) | CN109844173B (ja) |
FR (1) | FR3056993B1 (ja) |
WO (1) | WO2018065315A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007077502A (ja) | 2005-09-06 | 2007-03-29 | Applied Materials Inc | 基板堆積装置において高周波数チョークを使用するための装置および方法 |
US20090151636A1 (en) | 2007-11-16 | 2009-06-18 | Applied Materials, Inc. | Rpsc and rf feedthrough |
US20090324847A1 (en) | 2006-05-09 | 2009-12-31 | Applied Materials, Inc. | Method of avoiding a parasitic plasma in a plasma source gas supply conduit |
JP2010534390A (ja) | 2007-07-20 | 2010-11-04 | アプライド マテリアルズ インコーポレイテッド | プラズマ処理装置内のrf駆動型電極へのガス配送用のrfチョーク |
WO2011149615A2 (en) | 2010-05-24 | 2011-12-01 | Applied Materials, Inc. | Hybrid hotwire chemical vapor deposition and plasma enhanced chemical vapor deposition method and apparatus |
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Publication number | Priority date | Publication date | Assignee | Title |
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US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US5755886A (en) * | 1986-12-19 | 1998-05-26 | Applied Materials, Inc. | Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing |
US6170430B1 (en) | 1999-04-13 | 2001-01-09 | Applied Materials, Inc. | Gas feedthrough with electrostatic discharge characteristic |
FR2930561B1 (fr) | 2008-04-28 | 2011-01-14 | Altatech Semiconductor | Dispositif et procede de traitement chimique en phase vapeur. |
WO2010058560A1 (ja) * | 2008-11-20 | 2010-05-27 | 株式会社エバテック | プラズマ処理装置 |
-
2016
- 2016-10-04 FR FR1659559A patent/FR3056993B1/fr active Active
-
2017
- 2017-09-29 JP JP2019518071A patent/JP7002542B2/ja active Active
- 2017-09-29 EP EP17784580.7A patent/EP3523457B1/fr active Active
- 2017-09-29 WO PCT/EP2017/074799 patent/WO2018065315A1/fr unknown
- 2017-09-29 US US16/295,256 patent/US20200347500A1/en not_active Abandoned
- 2017-09-29 KR KR1020197012206A patent/KR102430407B1/ko active IP Right Grant
- 2017-09-29 CN CN201780059532.4A patent/CN109844173B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007077502A (ja) | 2005-09-06 | 2007-03-29 | Applied Materials Inc | 基板堆積装置において高周波数チョークを使用するための装置および方法 |
US20090324847A1 (en) | 2006-05-09 | 2009-12-31 | Applied Materials, Inc. | Method of avoiding a parasitic plasma in a plasma source gas supply conduit |
JP2010534390A (ja) | 2007-07-20 | 2010-11-04 | アプライド マテリアルズ インコーポレイテッド | プラズマ処理装置内のrf駆動型電極へのガス配送用のrfチョーク |
US20090151636A1 (en) | 2007-11-16 | 2009-06-18 | Applied Materials, Inc. | Rpsc and rf feedthrough |
WO2011149615A2 (en) | 2010-05-24 | 2011-12-01 | Applied Materials, Inc. | Hybrid hotwire chemical vapor deposition and plasma enhanced chemical vapor deposition method and apparatus |
Also Published As
Publication number | Publication date |
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KR102430407B1 (ko) | 2022-08-05 |
CN109844173A (zh) | 2019-06-04 |
US20200347500A1 (en) | 2020-11-05 |
EP3523457B1 (fr) | 2020-02-12 |
JP2019533085A (ja) | 2019-11-14 |
FR3056993A1 (fr) | 2018-04-06 |
CN109844173B (zh) | 2022-02-22 |
WO2018065315A1 (fr) | 2018-04-12 |
EP3523457A1 (fr) | 2019-08-14 |
KR20190059945A (ko) | 2019-05-31 |
FR3056993B1 (fr) | 2018-10-12 |
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