JP6999122B2 - Magnetic storage devices including vertical magnetic tunnel junctions - Google Patents

Description

The present invention relates to a magnetic storage element, and more particularly to a magnetic storage element provided with a vertical magnetic tunnel junction.

Due to the increase in speed and / or low power consumption of electronic devices, there is an increasing demand for high speed and / or low operating voltage of semiconductor storage elements included in electronic devices. In order to satisfy such a requirement, a magnetic storage element has been proposed as a semiconductor storage element. Since the magnetic storage element has characteristics such as high-speed operation and / or non-volatility, it is in the limelight as a next-generation semiconductor storage element.

Generally, the magnetic storage element includes a magnetic tunnel junction pattern (MTJ). The magnetic tunnel junction pattern includes two magnetic bodies and an insulating film interposed between them. The resistance value of the magnetic tunnel junction pattern differs depending on the magnetization direction of the two magnetic materials. For example, the magnetic tunnel junction pattern has a large resistance value when the magnetization directions of the two magnetic materials are antiparallel, and the magnetic tunnel junction pattern has a small resistance value when the magnetization directions of the two magnetic materials are parallel. .. Data can be written / read by using such a difference in resistance value.

With the high development of the electronics industry, the demand for high integration and / or low power consumption for magnetic storage devices is deepening. Therefore, much research is underway to meet these demands.

U.S. Pat. No. 8,363,459 U.S. Pat. No. 8,194,364 U.S. Pat. No. 8,345,390 U.S. Pat. No. 8,530,887 U.S. Patent Publication No. 2009/0057654 U.S. Patent Publication No. 2007/01/64336 U.S. Patent Publication No. 2010/01091111

A technical problem to be achieved by the present invention is to provide a magnetic storage element having excellent reliability by improving the tunnel magnetoresistive (TMR) characteristics and the like of a magnetic tunnel junction (MTJ).

The magnetic storage element according to the present invention is a first magnetic structure on a substrate, a second magnetic structure between the substrate and the first magnetic structure, and a second magnetic structure between the first magnetic structure and the second magnetic structure. Can include tunnel barriers. At least one of the first magnetic structure and the second magnetic structure comprises a vertical magnetic layer on the tunnel barrier and a polarization strengthening layer intervening between the tunnel barrier and the vertical magnetic layer and containing cobalt and iron. Can include. The polarization-enhancing layer can further contain at least one of the Group 4 elements. The polarization-enhancing layer can have a magnetization direction perpendicular to the top surface of the substrate.

The magnetic storage element according to the present invention is a first magnetic structure on a substrate, a second magnetic structure between the substrate and the first magnetic structure, and a second magnetic structure between the first magnetic structure and the second magnetic structure. Can include tunnel barriers. At least one of the first magnetic structure and the second magnetic structure is in contact with one surface of the tunnel barrier and may include a polarization strengthening layer containing cobalt and iron. The polarization-enhancing layer can further contain at least one of the Group 4 elements. The polarization-enhancing layer can have a magnetization direction perpendicular to the top surface of the substrate.

According to the concept of the present invention, a magnetic tunnel junction can include a polarization-enhanced layer in contact with one surface of the tunnel barrier. The polarization strengthening layer contains cobalt (Co) and iron (Fe) and can further contain at least one of the Group 4 elements.

The polarization-enhanced layer has a crystal structure having a (100) crystal plane parallel to the (100) crystal plane of the tunnel barrier at the time of vapor deposition. Therefore, even when the subsequent heat treatment step performed on the magnetic tunnel junction is performed at a low temperature of 300 ° C. or lower, the (100) crystal plane of the polarization strengthening layer is parallel to the (100) crystal plane of the tunnel barrier. Can be easily maintained. The (100) crystal plane of the polarization strengthening layer and the (100) crystal plane of the tunnel barrier can be in contact with each other to form an interface, and the matching of the crystal planes at the interface between the polarization strengthening layer and the tunnel barrier is the tunnel magnetism of the magnetic tunnel junction. The resistance can be improved.

Further, during the heat treatment step, at least one of the Group 4 elements in the polarization strengthening layer can be segregated at the grain boundaries in the polarization strengthening layer. Therefore, it is possible to minimize the diffusion of magnetic elements in the magnetic layer constituting the magnetic tunnel junction during the heat treatment step to the interface between the polarization strengthening layer and the tunnel barrier, and improve the tunnel magnetoresistance of the magnetic tunnel junction. can.

In addition, the polarization-enhanced layer can have a tetragonal deformed crystal structure induced by at least one of the Group 4 elements. Therefore, the vertical magnetic anisotropy of the polarization strengthening layer can be improved.

Therefore, it is possible to provide a magnetic storage element having excellent reliability.

It is a block diagram of the magnetic memory element by embodiment of this invention. It is a circuit diagram of the memory cell array of the magnetic storage element by embodiment of this invention. It is a circuit diagram which shows the unit memory cell of the magnetic memory element by embodiment of this invention. It is a drawing for demonstrating the magnetic tunnel junction by embodiment of this invention. It is a drawing for demonstrating the magnetic tunnel junction by embodiment of this invention. It is sectional drawing which shows the magnetic memory element by embodiment of this invention. It is sectional drawing for demonstrating an example of the 1st magnetic structure which constitutes a part of the magnetic tunnel junction by embodiment of this invention. It is sectional drawing for demonstrating an example of the 2nd magnetic structure which constitutes a part of the magnetic tunnel junction by embodiment of this invention. It is sectional drawing for demonstrating another example of the 1st magnetic structure which constitutes a part of the magnetic tunnel junction by embodiment of this invention. It is sectional drawing for demonstrating another example of the 2nd magnetic structure which constitutes a part of the magnetic tunnel junction by embodiment of this invention. It is a drawing for schematically explaining the electronic device including the semiconductor device according to the embodiment of this invention. It is a drawing for schematically explaining the electronic device including the semiconductor device according to the embodiment of this invention.

Hereinafter, the present invention will be described in detail by describing desirable embodiments of the present invention with reference to the accompanying drawings.

FIG. 1 is a block diagram of a magnetic storage element according to an embodiment of the present invention.

Referring to FIG. 1, the magnetic storage element includes a memory cell array 10, a row decoder 20, a column selection circuit 30, a read and write circuit 40, and a control logic 50.

The memory cell array 10 includes a plurality of word lines and a plurality of bit lines, and the memory cells are connected to the points where the word lines and the bit lines intersect. The configuration of the memory cell array 10 will be described in detail with reference to FIG.

The row decoder 20 is connected to the memory cell array 10 through a word line. The row decoder 20 decodes the address input from the outside and selects one among a plurality of word lines.

The column selection circuit 30 is connected to the memory cell array 10 through a bit line, decodes an address input from the outside, and selects one among a plurality of bit lines. The bit line selected by the column selection circuit 30 is connected to the read and write circuit 40.

The read and write circuit 40 provides a bitline bias for accessing selected memory cells under the control of control logic 50. The read and write circuit 40 writes the input data to a memory cell or provides a bitline voltage to the bitline selected for reading.

The control logic 50 outputs a control signal for controlling the semiconductor memory device according to a command signal provided from the outside. The control signal output by the control logic 50 controls the read / write circuit 40.

FIG. 2 is a circuit diagram of a memory cell array of a magnetic storage element according to an embodiment of the present invention, and FIG. 3 is a circuit diagram showing a unit memory cell of a magnetic storage element according to an embodiment of the present invention.

Referring to FIG. 2, the memory cell array 10 includes a plurality of first conductive lines, second conductive lines, and unit memory cell MC. The first conductive line is the word line WL0 to WL3, and the second conductive line is the bit line BL0 to BL3. The unit memory cells MC can be arranged two-dimensionally or three-dimensionally. The unit memory cell MC is connected between the word line WL and the bit line BL that intersect each other. Each of the word lines WL concatenates a plurality of unit memory cells MC. The unit memory cell MC connected by the word line WL is connected to the bit line BL, respectively. Each of the bit lines BL is concatenated to each of the unit memory cells MC connected by the word line WL. Therefore, each of the unit memory cell MCs connected by the wordline WL is connected by each of the bitlines BL to the read and write circuit 40 described with reference to FIG.

Referring to FIG. 3, each of the unit memory cell MCs includes a memory element ME (memory element) and a selection element SE (select element). The memory element ME is connected between the bit line BL and the selection element SE, and the selection element SE is connected between the memory element ME and the word line WL. The memory element ME is a variable resistance element that can be switched into two resistance states by an electric pulse applied to the memory element ME.

According to one embodiment, the memory element ME is formed to have a thin film structure in which its electrical resistance changes by utilizing a spin transmission process by a current passing through the memory element ME. The memory element ME has a thin film structure configured to exhibit magnetoresistive properties and comprises at least one ferromagnetic material and / or at least one antiferromagnetic material.

The selection element SE is configured to selectively control the flow of charge through the memory element ME. For example, the selection element SE is one of a diode, a PNP bipolar transistor, an NPN bipolar transistor, an MIMO field effect transistor, and a polyclonal field effect transistor. When the selection element SE is composed of a bipolar transistor or a MOS field effect transistor which is a three-terminal element, additional wiring (not shown) is connected to the selection element SE.

Specifically, the memory element ME includes a first magnetic structure MS1, a second magnetic structure MS2, and a tunnel barrier TBR between them. The first magnetic structure MS1, the second magnetic structure MS2, and the tunnel barrier TBR are defined as a magnetic tunnel junction MJT. Each of the first and second magnetic structures MS1 and MS2 contains at least one magnetic layer formed of a magnetic material. The memory element ME includes a lower electrode BE interposed between the second magnetic structure MS2 and the selection element SE, and an upper electrode TE interposed between the first magnetic structure MS1 and the bit line BL.

4 and 5 are drawings for explaining magnetic tunnel junction according to the embodiment of the present invention.

Referring to FIGS. 4 and 5, a magnetic tunnel junction MTJ is provided on the substrate 100. The magnetic tunnel junction MTJ includes a first magnetic structure MS1 and a second magnetic structure MS2 stacked on the substrate 100 in order, and a tunnel barrier TBR between them. The second magnetic structure MS2 is provided between the substrate 100 and the tunnel barrier TBR, and the first magnetic structure MS1 is separated from the second magnetic structure MS2 via the tunnel barrier TBR.

One of the magnetization directions in the magnetic layer of the first magnetic structure MS1 and the magnetic layer of the second magnetic structure MS2 is fixed under a normal usage environment regardless of an external magnetic field. .. In the following, a magnetic layer having such a fixed magnetization property is defined as a fixed layer (PNL). The other magnetization direction in the magnetic layer of the first magnetic structure MS1 and the magnetic layer of the second magnetic structure MS2 is switched by the external magnetic field applied to it. In the following, a magnetic layer having such a variable magnetization property is defined as a free layer (FRL). The magnetic tunnel junction MTJ comprises at least one free layer FRL and at least one fixed layer PNL separated by a tunnel barrier TBR.

The electrical resistance of the magnetic tunnel junction MTJ depends on the magnetization direction of the free layer FRL and the fixed layer PNL. As an example, the electrical resistance of a magnetic tunnel junction MTJ is much higher when they are antiparallel than when the magnetization directions of the free layer FRL and the fixed layer PNL are parallel. As a result, the electrical resistance of the magnetic tunnel junction MTJ can be adjusted by changing the magnetization direction of the free layer FRL, which is utilized as the principle of data storage in the magnetic memory device according to the present invention.

Each of the first and second magnetic structures MS1 and MS2 includes at least one magnetic layer having a magnetization direction substantially perpendicular to the upper surface of the substrate 100. In this case, the magnetic tunnel junction MTJ is classified into the following two types according to the relative arrangement between the free layer FRL and the substrate 100 constituting the magnetic tunnel junction MTJ and / or the formation order of the free layer FRL and the fixed layer PNL. Will be done.

As an example, as illustrated in FIG. 4, the magnetic tunnel junction MTJ is a type 1 magnetic structure in which the first magnetic structure MS1 and the second magnetic structure MS2 are configured to include a fixed layer PNL and a free layer FRL, respectively. It is a tunnel junction MTJ1. As another example, as illustrated in FIG. 5, the magnetic tunnel junction MTJ is a second type in which the first magnetic structure MS1 and the second magnetic structure MS2 are configured to include a free layer FRL and a fixed layer PNL, respectively. Magnetic tunnel junction MTJ2.

FIG. 6 is a cross-sectional view showing a magnetic storage element according to an embodiment of the present invention.

Referring to FIG. 6, the first dielectric film 102 is arranged on the substrate 100, and the lower contact plug 104 penetrates the first dielectric film 102. The lower surface of the lower contact plug 104 is electrically connected to one terminal of the selection element SE described with reference to FIG.

The substrate 100 is one of a substance having semiconductor characteristics, an insulating substance, and a semiconductor or a conductor covered with an insulating substance. As an example, the substrate 100 is a silicon wafer. The first dielectric film 102 contains oxides, nitrides, and / or oxide nitrides. The lower contact plug 104 contains a conductive material. As an example, conductive materials include dopant-doped semiconductors (eg, doped silicon, doped germanium, doped silicon-germanium, etc.), metals (eg, titanium, tantalum, tungsten, etc.) and conductive metals. At least one of the nitrides (eg, titanium nitride, tantalum nitride, etc.).

The lower electrode BE, the magnetic tunnel junction MTJ, and the upper electrode TE are laminated in this order on the first dielectric film 102. The lower electrode BE is electrically connected to the upper surface of the lower contact plug 104. The side walls of the lower electrode BE, the magnetic tunnel junction MTJ, and the upper electrode TE are aligned with each other.

The lower electrode BE contains a conductive material. As an example, the lower electrode BE contains a conductive metal nitride such as titanium nitride and / or tantalum nitride.

The magnetic tunnel junction MTJ has a first magnetic structure MS1 on the lower electrode BE, a second magnetic structure MS2 between the lower electrode BE and the first magnetic structure MS1, and a first magnetic structure MS1 and a second magnetic structure. Includes a tunnel barrier TBR to and from body MS2. Specifically, the second magnetic structure MS2 is arranged between the lower electrode BE and the tunnel barrier TBR, and the first magnetic structure MS1 is arranged between the upper electrode TE and the tunnel barrier TBR. The first magnetic structure MS1 and the second magnetic structure MS2 will be described later with reference to FIGS. 7 to 10.

The tunnel barrier TBR is magnesium (Mg) oxide, titanium (Ti) oxide, aluminum (Al) oxide, magnesium-zinc (MgZn) oxide, magnesium-boron (MgB) oxide, titanium (Ti) nitride, And at least one of the vanadium (V) nitrides. As an example, the tunnel barrier TBR is a magnesium oxide (MgO) film. In contrast, the tunnel barrier TBR contains multiple layers, each of which is a magnesium (Mg) oxide, a titanium (Ti) oxide, an aluminum (Al) oxide, a magnesium-zinc (MgZn) oxide. , Magnesium-boron (MgB) oxide, titanium (Ti) nitride, and vanadium (V) nitride. The thickness T1 of the tunnel barrier TBR is, for example, about 5 Å to about 15 Å.

The upper electrode TE contains a conductive substance. As an example, the upper electrode TE includes metals such as tantalum (Ta), aluminum (Al), copper (Cu), gold (Au), silver (Ag), and titanium (Ti), and tantalum nitride (TaN) and titanium nitride (Titanium nitride). It contains at least one of conductive metal nitrides such as TiN).

The second dielectric film 108 is arranged on the entire surface of the substrate 100 to cover the lower electrode BE, the magnetic tunnel junction MTJ, and the upper electrode TE. The upper contact plug 106 penetrates the second dielectric film 108 and is connected to the upper electrode TE. The second dielectric film 108 contains oxides, nitrides and / or oxide nitrides, etc., and the upper contact plug 106 is a metal (eg, titanium, tantalum, copper, aluminum, tungsten, etc.) and a conductive metal nitride (eg, eg, titanium, tantalum, aluminum, tungsten, etc.). It contains at least one of titanium nitride, tantalum nitride, etc.). The wiring 109 is arranged on the second dielectric film 108. The wiring 109 is connected to the upper contact plug 106. Wiring 109 comprises at least one of a metal (eg, titanium, tantalum, copper, aluminum, or tungsten, etc.) and a conductive metal nitride (eg, titanium nitride, tantalum nitride, etc.). According to one embodiment, the wiring 109 is a bit line.

FIG. 7 is a cross-sectional view for explaining an example of the first magnetic structure constituting a part of the magnetic tunnel junction according to the embodiment of the present invention.

Referring to FIG. 7, the first magnetic structure MS1 has a first Polarization Enhancement Layer 110, a first exchange coupling layer 120, and a first exchange coupling layer 120, which are sequentially laminated between the tunnel barrier TBR and the upper electrode TE. 1 Includes a vertical magnetic layer 130. The first magnetic structure MS1 according to the present embodiment is a multi-layered magnetic structure including a fixed layer PNL constituting a part of the first type magnetic tunnel junction MTJ1 described with reference to FIG.

Specifically, the first polarization strengthening layer 110 is arranged between the tunnel barrier TBR and the upper electrode TE, and the first vertical magnetic layer 130 is arranged between the first polarization strengthening layer 110 and the upper electrode TE. The first exchange coupling layer 120 is arranged between the first polarization strengthening layer 110 and the first vertical magnetic layer 130. Each of the first polarization strengthening layer 110 and the first vertical magnetic layer 130 has a magnetization direction substantially perpendicular to the upper surface of the substrate 100.

The first polarization strengthening layer 110 is adopted to increase the tunnel magnetoresistance (TMR) of the magnetic tunnel junction MTJ. The first polarization strengthening layer 110 contains a magnetic substance. As an example, the first polarization strengthening layer 110 contains cobalt (Co) and iron (Fe) and further contains at least one of the Group 4 elements. As an example, the first polarization strengthening layer 110 contains cobalt (Co) and iron (Fe), and further contains carbon (C). As an example, the first polarization strengthening layer 110 contains cobalt iron carbon (CoFeC). In this case, the first polarization strengthening layer 110 comprises (Co _x Fe _100-x ) _100-z C _z , where x is greater than about 0%, less than about 50%, or identical, z. Is about 2% to about 8%. The first polarization strengthening layer 110 further contains boron (B). As an example, the first polarization strengthening layer 110 contains cobalt iron carbon boron (CoFeCB). In this case, the first polarization strengthening layer 110 contains (Co _x Fe _100-x ) _{100-z-a Cz Ba} , where x is greater than about 0%, less than about 50%, or identical. Z + a is about 2% to about 8%.

The first polarization strengthening layer 110 is in direct contact with the upper surface of the tunnel barrier TBR. The tunnel barrier TBR and the first polarization strengthening layer 110 have a crystalline structure, and as an example, the tunnel barrier TBR and the first polarization strengthening layer 110 have a polycrystalline structure. As an example, the tunnel barrier TBR has a NaCl-type crystal structure, and the first polarization-enhanced layer 110 has a BCT (Body-Centered Catalyst) crystal structure similar in lattice arrangement to the NaCl-type crystal structure. The (100) crystal plane of the first polarization strengthening layer 110 is parallel to the (100) crystal plane of the tunnel barrier TBR. According to one embodiment, the (100) crystal planes of the first polarization strengthening layer 110 and the tunnel barrier TBR are substantially parallel to the top surface of the substrate 100. The (100) crystal plane of the first polarization strengthening layer 110 and the (100) crystal plane of the tunnel barrier TBR are in contact with each other to form an interface. Matching the crystal planes at the interface between the first polarization strengthening layer 110 and the tunnel barrier TBR can improve the tunnel magnetoresistance of the magnetic tunnel junction MTJ.

In the first polarization strengthening layer 110, a magnetic element (for example, Pt) in a magnetic layer (for example, the first vertical magnetic layer 130) adjacent to the first polarization strengthening layer 110 is an interface between the first polarization strengthening layer 110 and the tunnel barrier TBR. It can be prevented from spreading to the magnetism. Specifically, when the subsequent heat treatment step is performed on the magnetic tunnel junction MTJ, the magnetic element in the magnetic layer adjacent to the first polarization strengthening layer 110 becomes the first polarization strengthening layer 110 and the tunnel barrier TBR by the heat treatment step. Diffuse at the interface between. When the first polarization strengthening layer 110 contains CoFeC, carbon (C) is segregated at the grain boundaries in the first polarization strengthening layer 110 during the heat treatment step, and accordingly, the magnetic element is first. Diffuse at the interface between the polarization-enhanced layer 110 and the tunnel barrier TBR can be minimized. Therefore, the tunnel magnetoresistance of the magnetic tunnel junction MTJ can be improved.

The first polarization-enhanced layer 110 has a tetragonal-distorted crystal structure. As an example, when the first polarization strengthening layer 110 contains CoFeC, the carbon (C) bonded to CoFe induces a tetragonal distortion of the CoFe crystal structure (for example, the BCC crystal structure). As an example, the first polarization strengthening layer 110 has a BCT crystal structure. The tetragonal deformation induced by carbon (C) can improve the vertical magnetic anisotropy of the first polarization strengthening layer 110.

Generally, in order to increase the tunnel magnetoresistance of the magnetic tunnel junction MTJ, the magnetic tunnel junction MTJ includes a tunnel barrier TBR and a polarization strengthening layer in contact with one surface of the tunnel barrier TBR. The polarization strengthening layer contains CoFeB as an example. In this case, at the time of vapor deposition of the polarization strengthening layer, at least a part of the polarization strengthening layer has an amorphous structure and is transitioned to a crystal structure through a subsequent heat treatment step. The heat treatment step is required to be carried out at a high temperature of about 400 ° C. or higher. When the heat treatment step is carried out at a high temperature, the magnetic elements in the magnetic layer constituting the magnetic tunnel junction MTJ are easily diffused to the polarization strengthening layer and / or the interface between the polarization strengthening layer and the tunnel barrier TBR, and accordingly. Magnetic tunnel junction The tunnel magnetoresistance of the MTJ can be low.

According to the present embodiment, the first polarization strengthening layer 110 contains cobalt (Co) and iron (Fe), and further contains at least one of Group 4 elements. As an example, the first polarization strengthening layer 110 contains cobalt iron carbon (CoFeC). The first polarization strengthening layer 110 has a crystal structure having a (100) crystal plane parallel to the (100) crystal plane of the tunnel barrier TBR at the time of vapor deposition. Therefore, even when the subsequent heat treatment step performed on the magnetic tunnel junction MTJ is performed at a low temperature of 300 ° C. or lower, the (100) crystal plane of the first polarization strengthening layer 110 is the (100) crystal plane of the tunnel barrier TBR. Can be easily maintained in parallel with. The (100) crystal plane of the first polarization strengthening layer 110 and the (100) crystal plane of the tunnel barrier TBR are in contact with each other to form an interface, and the matching of the crystal planes at the interface between the first polarization strengthening layer 110 and the tunnel barrier TBR is magnetic. The tunnel magnetoresistance of the tunnel junction MTJ can be improved.

Further, when the first polarization strengthening layer 110 contains CoFeC, carbon (C) can be segregated at the grain boundaries in the first polarization strengthening layer 110 during the heat treatment step. Therefore, during the heat treatment step, the diffusion of magnetic elements in the magnetic layer constituting the magnetic tunnel junction MTJ to the interface between the first polarization strengthening layer 110 and the tunnel barrier TBR is minimized, and the tunnel of the magnetic tunnel junction MTJ is minimized. The magnetic resistance can be improved.

Further, when the first polarization strengthening layer 110 contains CoFeC, the first polarization strengthening layer 110 has a tetragonal deformed crystal structure induced by carbon (C), and accordingly, the first polarization strengthening layer 110. The vertical magnetic anisotropy of the layer 110 can be improved.

Therefore, it is possible to provide a magnetic storage element having excellent reliability.

The first exchange bond layer 120 contains a non-magnetic metal substance. The non-magnetic metallic material is, for example, Hf, Zr, Ti, Ta, and at least one of these alloys. The first polarization strengthening layer 110 is exchange-bonded with the first vertical magnetic layer 130 by the first exchange coupling layer 120, and accordingly, the magnetization direction of the first polarization strengthening layer 110 is the same as the magnetization direction of the first vertical magnetic layer 130. Is. According to the present embodiment, each of the first polarization strengthening layer 110 and the first vertical magnetic layer 130 has a magnetization direction fixed in one direction.

The first perpendicular magnetic layer 130 is formed of a magnetic substance having an intrinsic perpendicular magnetization property (hereinafter referred to as a perpendicular magnetic substance). Here, the intrinsic perpendicular magnetization property means a property in which the magnetic layer has a magnetization direction parallel to the thickness direction of the magnetic layer in the absence of an external factor. As an example, when a magnetic layer having perpendicular magnetization characteristics is formed on a substrate, the magnetization direction of the magnetic layer is substantially perpendicular to the upper surface of the substrate.

The intrinsic perpendicular magnetization property can be embodied through a single-layer or multi-layer structure containing at least one of the perpendicular magnetic materials containing cobalt. In some embodiments, the first vertical magnetic layer 130 is an alloy of cobalt platinum or an alloy of cobalt platinum comprising component X, where component X is at least one of boron, ruthenium, chromium, tantalum, or an oxide. It is a single-layer or multi-layer structure including one). In another embodiment, the first vertical magnetic layer 130 can be provided as a multilayer structure including a cobalt-containing film and a noble metal film laminated alternately and repeatedly. In this case, the cobalt-containing film can be formed of one of cobalt, cobalt iron, cobalt nickel, and cobalt chromium, and the noble metal film can be formed of one of platinum and palladium. In another embodiment, the first vertical magnetic layer 130 is provided as a multilayer film structure including one thin film according to the above-described embodiment.

The above-mentioned material is only mentioned as an example of the above-mentioned material having the above-mentioned intrinsic perpendicular magnetization property of the first perpendicular magnetic layer 130 in order to facilitate the understanding of the technical idea of the present invention. The embodiment is not limited to this. As an example, in the first vertical magnetic layer 130, a) terbium (Tb) content ratio of 10% or more is cobalt iron terbium (CoFeTb), b) gadolinium (Gd) content ratio is 10% or more. Gadolinium (CoFeGd), c) Cobalt iron dysprosium (CoFeDy), d) L10 structure FePt, e) L10 structure FePd, f) L10 structure CoPd, g) L10 or L11 structure CoPt, h) Dense hexagonal lattice ( CoPt of the Hexagonal Close Packed Lattice) structure, i) an alloy containing at least one of the above-mentioned a) to h) substances, and j) a structure in which magnetic and non-magnetic layers are laminated alternately and repeatedly. It is one of them. The structure in which the magnetic layer and the non-magnetic layer are alternately and repeatedly laminated is (Co / Pt) n, (CoFe / Pt) n, (CoFe / Pd) n, (Co / Pd) n, (Co / Ni). ) N, (CoNi / Pt) n, (CoCr / Pt) n or (CoCr / Pd) n (n is the number of layers). In some embodiments, the first vertical magnetic layer 130 may further include a cobalt or cobalt-rich layer in contact with the first exchange bond layer 120.

FIG. 8 is a cross-sectional view for explaining an example of a second magnetic structure constituting a part of the magnetic tunnel junction according to the embodiment of the present invention.

Referring to FIG. 8, the second magnetic structure MS2 has a second Polarization Enchantment Layer 140, a second exchange coupling layer 160, and a second, which are sequentially laminated between the tunnel barrier TBR and the lower electrode BE. 2 Includes a vertical magnetic layer 170. The second magnetic structure MS2 further includes a seed layer 180 between the lower electrode BE and the second vertical magnetic layer 170, and a non-magnetic metal layer 150 between the second polarization strengthening layer 140 and the second exchange bonding layer 160. include. The second magnetic structure MS2 according to the present embodiment is a multi-layered magnetic structure including a free layer FRL that constitutes a part of the first type magnetic tunnel junction MTJ1 described with reference to FIG.

Specifically, the second polarization strengthening layer 140 is arranged between the tunnel barrier TBR and the lower electrode BE, and the second vertical magnetic layer 170 is arranged between the second polarization strengthening layer 140 and the lower electrode BE. The second exchange bond layer 160 is arranged between the second polarization strengthening layer 140 and the second vertical magnetic layer 170. The seed layer 180 is arranged between the second vertical magnetic layer 170 and the lower electrode BE, and the non-magnetic metal layer 150 is arranged between the second polarization strengthening layer 140 and the second exchange coupling layer 160. Each of the second polarization strengthening layer 140 and the second vertical magnetic layer 170 has a magnetization direction substantially perpendicular to the upper surface of the substrate 100.

The second polarization strengthening layer 140 is adopted to increase the tunnel magnetoresistance of the magnetic tunnel junction MTJ. The second polarization strengthening layer 140 contains a magnetic substance. As an example, the second polarization strengthening layer 140 contains cobalt (Co) and iron (Fe) and further contains at least one of the Group 4 elements. The second polarization strengthening layer 140 contains the same substance as the first polarization strengthening layer 110 described with reference to FIG. 7. As an example, the second polarization strengthening layer 140 contains cobalt iron carbon (CoFeC). In this case, the second polarization strengthening layer 140 contains (Co _x Fe _100-x ) _100-z C _z , where x is greater than about 0%, less than about 50%, or identical, z. Is about 2% to about 8%. The second polarization strengthening layer 140 further contains boron (B). As an example, the second polarization strengthening layer 140 contains cobalt iron carbon boron (CoFeCB). In this case, the second polarization strengthening layer 140 contains (Co _x Fe _100-x ) _{100-z-a Cz Ba} , where x is greater than about 0%, less than about 50%, or identical. Z + a is about 2% to about 8%.

The second polarization strengthening layer 140 is in direct contact with the lower surface of the tunnel barrier TBR and is in direct contact with the upper surface of the non-magnetic metal layer 150. The tunnel barrier TBR, the second polarization strengthening layer 140, and the non-magnetic metal layer 150 have a crystal structure, and as an example, the tunnel barrier TBR, the second polarization strengthening layer 140, and the non-magnetic metal layer 150 have a polycrystalline structure. have. As an example, the tunnel barrier TBR and the non-magnetic metal layer 150 have a NaCl-type crystal structure, and the second polarization-enhanced layer 140 has a BCT (Body-Centered Tetragonal) crystal structure similar in lattice arrangement to the NaCl-type crystal structure. The (100) crystal plane of the second polarization strengthening layer 140 is parallel to the (100) crystal plane of the non-magnetic metal layer 150 and the (100) crystal plane of the tunnel barrier TBR. According to one embodiment, the (100) crystal planes of the second polarization strengthening layer 140, the tunnel barrier TBR, and the non-magnetic metal layer 150 are substantially parallel to the top surface of the substrate 100. The (100) crystal plane of the second polarization strengthening layer 140 and the (100) crystal plane of the tunnel barrier TBR are in contact with each other to form an interface, and the matching of the crystal planes at the interface between the second polarization strengthening layer 140 and the tunnel barrier TBR is a magnetic tunnel. The tunnel magnetoresistance of the junction MTJ can be improved.

In the second polarization strengthening layer 140, the magnetic element (Pt, for example) in the magnetic layer (for example, the second vertical magnetic layer 170) adjacent thereto is the interface between the second polarization strengthening layer 140 and the tunnel barrier TBR. It can be minimized to spread to. As an example, when a subsequent heat treatment step is performed on the magnetic tunnel junction MTJ, the magnetic elements in the magnetic layer adjacent to the second polarization strengthening layer 140 are transferred to the second polarization strengthening layer 140 and the tunnel barrier TBR during the heat treatment step. Can be diffused to the interface between and. As an example, when the second polarization strengthening layer 140 contains CoFeC, carbon (C) is segregated at the grain boundaries in the second polarization strengthening layer 140 during the heat treatment step, and accordingly, the magnetic element. Can be minimized to diffuse to the interface between the second polarization strengthening layer 140 and the tunnel barrier TBR. Therefore, the tunnel magnetoresistance of the magnetic tunnel junction MTJ can be improved.

The second polarization-enhanced layer 140 has a tetragonal-distorted crystal structure. As an example, when the second polarization strengthening layer 140 contains CoFeC, the carbon (C) bonded to CoFe can induce a tetragonal distortion of the CoFe crystal structure (for example, the BCC crystal structure). .. As an example, the second polarization strengthening layer 140 has a BCT crystal structure. The tetragonal deformation induced by carbon (C) can improve the vertical magnetic anisotropy of the second polarization strengthening layer 140.

The non-magnetic metal layer 150 is adopted to facilitate the crystal growth of the second polarization strengthening layer 140. As an example, the (100) crystal plane of the non-magnetic metal layer 150 is substantially parallel to the top surface of the substrate 100. When the second polarization strengthening layer 140 is vapor-deposited on the upper surface of the non-magnetic metal layer 150, the second polarization strengthening layer 140 is a crystal having a (100) crystal plane parallel to the (100) crystal plane of the non-magnetic metal layer 150. It is vaporized to have a structure. The (100) crystal plane of the tunnel barrier TBR is also substantially parallel to the top surface of the substrate 100. Therefore, even when the subsequent heat treatment step performed on the magnetic tunnel junction MTJ is performed at a low temperature of 300 ° C. or lower, the (100) crystal plane of the second polarization strengthening layer 140 is the (100) crystal plane of the tunnel barrier TBR. Can be easily maintained in parallel with.

The non-magnetic metal layer 150 includes magnesium (Mg) oxide, titanium (Ti) oxide, aluminum (Al) oxide, magnesium-zinc (MgZn) oxide, magnesium-boron (MgB) oxide, and titanium (Ti) nitride. Containing at least one of the material and vanadium (V) nitride. The non-magnetic metal layer 150 contains the same material as the tunnel barrier TBR. As an example, the non-magnetic metal layer 150 is a magnesium oxide (MgO) film. According to one embodiment, the thickness T2 of the non-magnetic metal layer 150 is smaller than the thickness T1 of the tunnel barrier TBR.

The second exchange bond layer 160 contains a non-magnetic metal substance. The non-magnetic metallic material is, for example, Hf, Zr, Ti, Ta, and at least one of these alloys. The second polarization-enhanced layer 140 is exchange-bonded to the second vertical magnetic layer 170 by the second exchange-bonded layer 160, whereby the second polarization-enhanced layer 140 is vertical parallel to the magnetization direction of the second vertical magnetic layer 170. Has magnetization. According to the present embodiment, each of the second polarization strengthening layer 140 and the second vertical magnetic layer 170 has a changeable magnetization direction. According to some embodiments, the second exchange coupling layer 160 can be omitted.

The second perpendicular magnetic layer 170 is formed of a magnetic substance having an intrinsic perpendicular magnetization property (hereinafter referred to as a perpendicular magnetic substance). The intrinsic perpendicular magnetization property can be embodied through a single-layer or multi-layer structure containing at least one of the perpendicular magnetic materials containing cobalt. In some embodiments, the second vertical magnetic layer 170 is an alloy of cobalt platinum or an alloy of cobalt platinum comprising component X, where component X is at least one of boron, ruthenium, chromium, tantalum, or an oxide. It is a single-layer or multi-layer structure including one). In another embodiment, the second vertical magnetic layer 170 can be provided as a multilayer structure including a cobalt-containing film and a noble metal film laminated alternately and repeatedly. In this case, the cobalt-containing film is formed of one of cobalt, cobalt iron, cobalt nickel, and cobalt chromium, and the noble metal film is formed of one of platinum and palladium. In another embodiment, the second vertical magnetic layer 170 is provided as a multilayer film structure including one thin film according to the above-described embodiment.

The seed layer 180 contains a substance useful for crystal growth of the magnetic layer constituting the magnetic tunnel junction MTJ. According to one embodiment, the seed layer 180 contains metal atoms that make up a dense hexagonal lattice (HCP). As an example, the seed layer 180 contains ruthenium (Ru), titanium (Ti), and / or tantalum (Ta). However, according to other embodiments, the seed layer 180 may contain metal atoms that make up a face-centered cubic lattice (FCC). As an example, the seed layer 180 may contain at least one of platinum (Pt), palladium (Pd), gold (Au), silver (Ag), copper (Cu) and aluminum (Al). The seed layer 180 may include a single layer or a plurality of layers having different crystal structures from each other.

FIG. 9 is a cross-sectional view for explaining another example of the first magnetic structure constituting a part of the magnetic tunnel junction according to the embodiment of the present invention.

Referring to FIG. 9, the first magnetic structure MS1 has a second Polarization Enhancement Layer 140, a second exchange coupling layer 160, and a second exchange coupling layer 160, which are sequentially laminated between the tunnel barrier TBR and the upper electrode TE. 2 Includes a vertical magnetic layer 170. The first magnetic structure MS1 further includes a sub-layer 190 between the upper electrode TE and the second vertical magnetic layer 170. The first magnetic structure MS1 according to the present embodiment is a multi-layered magnetic structure including a free layer FRL that constitutes a part of the second type magnetic tunnel junction MTJ2 described with reference to FIG.

Specifically, the second polarization strengthening layer 140 is arranged between the tunnel barrier TBR and the upper electrode TE, and the second vertical magnetic layer 170 is arranged between the second polarization strengthening layer 140 and the upper electrode TE. The second exchange bond layer 160 is arranged between the second polarization strengthening layer 140 and the second vertical magnetic layer 170. The sub-layer 190 is arranged between the upper electrode TE and the second vertical magnetic layer 170. Each of the second polarization strengthening layer 140 and the second vertical magnetic layer 170 has a magnetization direction substantially perpendicular to the upper surface of the substrate 100.

The second polarization strengthening layer 140 is in direct contact with the upper surface of the tunnel barrier TBR. The tunnel barrier TBR and the second polarization strengthening layer 140 have a crystalline structure, and as an example, the tunnel barrier TBR and the second polarization strengthening layer 140 have a polycrystalline structure. As an example, the tunnel barrier TBR has a NaCl type crystal structure, and the second polarization strengthening layer 140 has a BCT crystal structure. The (100) crystal plane of the second polarization strengthening layer 140 is parallel to the (100) crystal plane of the tunnel barrier TBR. According to one embodiment, the (100) crystal planes of the second polarization strengthening layer 140 and the tunnel barrier TBR are substantially parallel to the top surface of the substrate 100.

The second polarization-enhanced layer 140 is exchange-bonded to the second vertical magnetic layer 170 by the second exchange-bonded layer 160, whereby the second polarization-enhanced layer 140 is vertical parallel to the magnetization direction of the second vertical magnetic layer 170. Has magnetization. According to the present embodiment, each of the second polarization strengthening layer 140 and the second vertical magnetic layer 170 has a changeable magnetization direction. According to some embodiments, the second exchange coupling layer 160 can be omitted.

The second polarization strengthening layer 140, the second exchange bond layer 160, and the second vertical magnetic layer 170 are the second polarization strengthening layer 140 and the second exchange bond described with reference to FIG. 8, except for their positional differences. Since it is substantially the same as the layer 160 and the second vertical magnetic layer 170, detailed description thereof will be omitted.

According to this embodiment, the sub-layer 190 helps the second vertical magnetic layer 170 to have a magnetization that is perpendicular to the top surface of the substrate 100. Sublayer 190 includes magnesium (Mg) oxide, titanium (Ti) oxide, aluminum (Al) oxide, magnesium-zinc (MgZn) oxide, magnesium-boron (MgB) oxide, titanium (Ti) nitride, And at least one of the vanadium (V) nitrides. Sublayer 190 contains the same material as the tunnel barrier TBR. As an example, the sublayer 190 can be a magnesium oxide (MgO) film. The thickness T3 of the sublayer 190 is smaller than the thickness T1 of the tunnel barrier TBR.

FIG. 10 is a cross-sectional view for explaining another example of the second magnetic structure constituting a part of the magnetic tunnel junction according to the embodiment of the present invention.

Referring to FIG. 10, the second magnetic structure MS2 has a first polarization strengthening layer 110, a first exchange coupling layer 120, and a first vertical magnetic layer 130 laminated in this order between the tunnel barrier TBR and the lower electrode BE. including. The second magnetic structure MS2 further includes a seed layer 180 between the lower electrode BE and the first vertical magnetic layer 130, and a non-magnetic metal layer 150 between the first polarization strengthening layer 110 and the first exchange bonding layer 120. include. The second magnetic structure MS2 according to the present embodiment is a multi-layered magnetic structure including a fixed layer PNL constituting a part of the second type magnetic tunnel junction MTJ2 described with reference to FIG.

Specifically, the first polarization strengthening layer 110 is arranged between the tunnel barrier TBR and the lower electrode BE, and the first vertical magnetic layer 130 is arranged between the first polarization strengthening layer 110 and the lower electrode BE. The first exchange-bonded layer 120 is arranged between the first polarization-reinforced layer 110 and the first vertical magnetic layer 130, and the non-magnetic metal layer 150 is located between the first polarization-reinforced layer 110 and the first exchange-bonded layer 120. Be placed. The seed layer 180 is arranged between the lower electrode BE and the first vertical magnetic layer 130. Each of the first polarization strengthening layer 110 and the first vertical magnetic layer 130 has a magnetization direction substantially perpendicular to the upper surface of the substrate 100.

The first polarization strengthening layer 110 is in direct contact with the lower surface of the tunnel barrier TBR and is in direct contact with the upper surface of the non-magnetic metal layer 150. The tunnel barrier TBR, the first polarization strengthening layer 110, and the non-magnetic metal layer 150 have a crystalline structure, and as an example, the tunnel barrier TBR, the first polarization strengthening layer 110, and the non-magnetic metal layer 150 have a polycrystalline structure. have. As an example, the tunnel barrier TBR and the non-magnetic metal layer 150 have a NaCl type crystal structure, and the first polarization strengthening layer 110 has a BCT crystal structure. The (100) crystal plane of the first polarization strengthening layer 110 is parallel to the (100) crystal plane of the non-magnetic metal layer 150 and the (100) crystal plane of the tunnel barrier TBR. According to one embodiment, the (100) crystal planes of the first polarization strengthening layer 110, the tunnel barrier TBR, and the non-magnetic metal layer 150 are substantially parallel to the top surface of the substrate 100.

The non-magnetic metal layer 150 is adopted to facilitate the crystal growth of the first polarization strengthening layer 110. As an example, the (100) crystal plane of the non-magnetic metal layer 150 is substantially parallel to the top surface of the substrate 100. When the first polarization strengthening layer 110 is vapor-deposited on the upper surface of the non-magnetic metal layer 150, the first polarization strengthening layer 110 has a (100) crystal plane parallel to the (100) crystal plane of the non-magnetic metal layer 150. It is vaporized to have a crystal structure. The (100) crystal plane of the tunnel barrier TBR is also substantially parallel to the top surface of the substrate 100. Therefore, even when the subsequent heat treatment step performed on the magnetic tunnel junction MTJ is performed at a low temperature of 300 ° C. or lower, the (100) crystal plane of the first polarization strengthening layer 110 is the (100) crystal plane of the tunnel barrier TBR. Easily maintain a state parallel to. The thickness T2 of the non-magnetic metal layer 150 is smaller than the thickness T1 of the tunnel barrier TBR.

The first polarization strengthening layer 110 is exchange-bonded with the first vertical magnetic layer 130 by the first exchange coupling layer 120, and accordingly, the magnetization direction of the first polarization strengthening layer 110 is the same as the magnetization direction of the first vertical magnetic layer 130. Is. According to the present embodiment, each of the first polarization strengthening layer 110 and the first vertical magnetic layer 130 has a magnetization direction fixed in one direction.

The first polarization strengthening layer 110, the first exchange bond layer 120, and the first vertical magnetic layer 130 are the first polarization strengthening layer 110 and the first exchange bond described with reference to FIG. 7, except for their positional differences. Since it is substantially the same as the layer 120 and the first vertical magnetic layer 130, detailed description thereof will be omitted. Further, the non-magnetic metal layer 150 and the seed layer 180 are substantially the same as the non-magnetic metal layer 150 and the seed layer 180 described with reference to FIG. 8, except for their positional differences.

According to the concept of the present invention, a magnetic tunnel junction comprises a polarization-enhanced layer in contact with one surface of the tunnel barrier. The polarization-enhancing layer contains cobalt (Co) and iron (Fe) and further contains at least one of the Group 4 elements.

The polarization strengthening layer has a crystal structure having a (100) crystal plane parallel to the (100) crystal plane of the tunnel barrier at the time of vapor deposition. Therefore, even when the subsequent heat treatment step performed on the magnetic tunnel junction is performed at a low temperature of 300 ° C. or lower, the (100) crystal plane of the polarization strengthening layer is parallel to the (100) crystal plane of the tunnel barrier. Can be easily maintained. The (100) crystal plane of the polarization strengthening layer and the (100) crystal plane of the tunnel barrier form an interface in contact with each other, and the matching of the crystal planes at the interface between the polarization strengthening layer and the tunnel barrier improves the tunnel magnetoresistance of the magnetic tunnel junction. Can be made to.

Further, during the heat treatment step, at least one of the Group 4 elements in the polarization strengthening layer can be segregated at the grain boundaries in the polarization strengthening layer. Therefore, during the heat treatment process, the diffusion of magnetic elements in the magnetic layer constituting the magnetic tunnel junction to the interface between the polarization strengthening layer and the tunnel barrier is minimized, and the tunnel magnetoresistance of the magnetic tunnel junction is improved. Can be done.

In addition, the polarization-enhanced layer can have a tetragonal deformed crystal structure induced by at least one of the Group 4 elements. Therefore, the vertical magnetic anisotropy of the polarization strengthening layer can be improved.

Therefore, it is possible to provide a magnetic storage element having excellent reliability.

11 and 12 are drawings for schematically explaining an electronic device including a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 11, the electronic device 1300 including the semiconductor device according to the embodiment of the present invention includes a PDA, a laptop computer, a portable computer, a web tablet, a wireless telephone, a mobile phone, and digital music reproduction. It is one of a digital musical player, a wireless electronic device, or a composite electronic device including at least two of them. The electronic device 1300 includes a controller 1310 coupled to each other through a bus 1350, a keypad, a keyboard, an input / output device 1320 such as a display, a memory 1330, and a wireless interface 1340. The controller 1310 can include, for example, one or more microprocessors, digital signal processors, microcontrollers, or the like. The memory 1330 is used, for example, to store an instruction word executed by the controller 1310. The memory 1330 is used to store user data and may include the semiconductor device according to the embodiment of the present invention described above. The electronic device 1300 uses the radio interface 1340 to transmit data to or receive data from the network using RF signals. For example, the wireless interface 1340 includes an antenna, a wireless transceiver, and the like. The electronic device 1300 includes CDMA, GSM (registered trademark), NADC, E-TDMA, WCDMA (registered trademark), CDMA2000, Wi-Fi, MuniWi-Fi, Bluetooth (registered trademark), DECT, WiMAXUSB, Flash-OFDM, and IEEE802. It can be used to embody communication interface protocols for communication systems such as .20, GPRS, iBurst, WiBro, WiMAX, WiMAX-Advanced, UMTS-TDD, HSPA, EVDO, LTE-Advanced, MMDS and the like.

Referring to FIG. 12, the semiconductor device according to the embodiment of the present invention is used to embody a memory system. The memory system 1400 includes a memory element 1410 and a memory controller 1420 for storing a large amount of data. The memory controller 1420 controls the memory element 1410 to read or write the data stored from the memory element 1410 in response to the read / write request of the host 1430. The memory controller 1420 constitutes an address mapping table for mapping an address provided by a host 1430, for example, a mobile device or a computer system, to the physical address of the memory element 1410. The memory element 1410 includes the semiconductor device according to the embodiment of the present invention described above.

The semiconductor device disclosed in the above-described embodiment can be embodied in various forms of semiconductor packages (semiconductor packages). For example, the semiconductor device according to the embodiment of the present invention includes PoP (Package on Package), Ball grid arrows (BGAs), Chip scale packages (CSPs), Plastic Leaded Chip Carrier (PLCC), and PlasticD. Die in Waffle Pack, Die in Waver Form, Chip On Board (COB), Chemical Dual In-Line Package (CERDIP), Plastic Metal Pack (CRDIP), Plastic Metal Quad FlatPack (MFP) Small Outline Package (SSOP), Thin Small Outline (TOP), Thin Quad Flatpack (TQFP), System In Package (SIP), Multi Chip Package (MCP) It can be packaged in a method such as (WSP).

The package on which the semiconductor device according to the embodiment of the present invention is mounted may further include a controller and / or a logic element for controlling the semiconductor device.

The above description of embodiments of the invention provides examples for illustrating the invention. Therefore, the present invention is not limited to the above-described embodiment, and various modifications and various modifications such as a combination of the above-described embodiments are carried out by a person having ordinary knowledge in the technical field within the technical idea of the present invention. It is clear that changes are possible.

MTJ, MTJ1, MTJ2 Magnetic tunnel junction 100 Substrate MS1 First magnetic structure MS2 Second magnetic structure TBR Tunnel barrier BE Lower electrode TE Upper electrode 102 First dielectric film 104 Lower contact plug 108 Second dielectric film 106 Upper contact plug 109 Wiring 110, 140 Polarization strengthening layer 120, 160 Exchange bond layer 130, 170 Vertical magnetic layer 150 Non-magnetic metal layer 180 Seed layer 190 Sub-layer

Claims (12)

The first magnetic structure including the first surface and
The second magnetic structure including the second surface and
Includes a tunnel barrier between the first surface of the first magnetic structure and the second surface of the second magnetic structure.
At least one of the first magnetic structure and the second magnetic structure is
With a vertical magnetic layer,
Includes a polarization-enhancing layer interposed between the tunnel barrier and the vertical magnetic layer.
The polarization-enhanced layer comprises a cobalt iron carbon layer having a tetragonal deformed crystal structure with a crystal plane parallel to the crystal plane of the tunnel barrier.
The polarization strengthening layer is perpendicular to at least one of the first surface and the second surface .
At least one of the first magnetic structure and the second magnetic structure further includes an exchange bond layer between the polarization strengthening layer and the vertical magnetic layer.
It further comprises a first electrode isolated from the tunnel barrier via the first magnetic structure.
The first magnetic structure includes the polarization strengthening layer, the exchange bond layer, the vertical magnetic layer, and an upper non-magnetic layer between the vertical magnetic layer and the first electrode.
The tunnel barrier includes one surface, and the polarization strengthening layer is in direct contact with the one surface of the tunnel barrier.
The upper non-magnetic layer is a magnetic storage element having a magnetization direction, which contains the same substance as the tunnel barrier . The first magnetic structure including the first surface and
The second magnetic structure including the second surface and
Includes a tunnel barrier between the first surface of the first magnetic structure and the second surface of the second magnetic structure.
At least one of the first magnetic structure and the second magnetic structure is
With a vertical magnetic layer,
Includes a polarization-enhancing layer interposed between the tunnel barrier and the vertical magnetic layer.
The polarization-enhanced layer comprises a cobalt iron carbon layer having a tetragonal deformed crystal structure with a crystal plane parallel to the crystal plane of the tunnel barrier.
The polarization strengthening layer is perpendicular to at least one of the first surface and the second surface.
At least one of the first magnetic structure and the second magnetic structure further includes an exchange coupling layer between the polarization strengthening layer and the vertical magnetic layer.
A substrate separated from the tunnel barrier via the second magnetic structure,
Further comprising a second electrode between the substrate and the second magnetic structure.
The second magnetic structure includes the polarization strengthening layer, the exchange bond layer, the vertical magnetic layer, and a non-magnetic metal layer between the polarization strengthening layer and the exchange bond layer.
The tunnel barrier includes one surface, and the polarization strengthening layer is a magnetic storage element having a magnetization direction that is in direct contact with the one surface of the tunnel barrier. The polarization-enhanced layer comprises (Co _x Fe _100-x ) _100-z C _z .
The magnetic storage element according to claim 1 or 2 , wherein x is greater than 0%, less than 50%, or the same, and z is 2% to 8%. The polarization strengthening layer contains (Co _x Fe _100-x ) _{100-z-a Cz Ba} .
The magnetic storage element according to claim 1 or 2 , wherein x is greater than 0%, less than 50%, or the same, and z + a is 2% to 8%. The tunnel barrier and the polarization strengthening layer include (100) crystal planes.
The magnetic storage element according to claim 1 or 2 , wherein the (100) crystal plane of the polarization strengthening layer is parallel to the (100) crystal plane of the tunnel barrier. The magnetic storage element according to claim 5 , wherein the polarization-enhanced layer has a tetragonal-distorted crystal structure. The vertical magnetic layer comprises at least one magnetic layer that is perpendicular to at least one of the first surface and the second surface and has a changeable magnetization direction.
The magnetic storage element according to claim 1 or 2 , wherein the magnetization direction of the polarization strengthening layer can be changed in parallel with the magnetization direction of the vertical magnetic layer. The first magnetic structure and
The second magnetic structure and
Includes a tunnel barrier between the first magnetic structure and the second magnetic structure.
The first magnetic structure, the second magnetic structure, and the tunnel barrier are aligned in the first direction.
At least one of the first magnetic structure and the second magnetic structure is
With a vertical magnetic layer,
Includes a polarization-enhancing layer interposed between the tunnel barrier and the vertical magnetic layer.
The polarization-enhanced layer comprises a cobalt iron carbon layer having a tetragonal deformed crystal structure with a crystal plane parallel to the crystal plane of the tunnel barrier.
The polarization strengthening layer has a magnetization direction parallel to or antiparallel to the first direction.
It further comprises a first electrode isolated from the tunnel barrier via the first magnetic structure.
The first magnetic structure includes the polarization strengthening layer, the vertical magnetic layer, the exchange coupling layer between the polarization strengthening layer and the vertical magnetic layer, and the upper portion between the vertical magnetic layer and the first electrode. Including non-magnetic layer,
The tunnel barrier includes one surface, and the polarization strengthening layer is in direct contact with the one surface of the tunnel barrier.
The upper non-magnetic layer is a magnetic storage element containing the same substance as the tunnel barrier . The first magnetic structure and
The second magnetic structure and
Includes a tunnel barrier between the first magnetic structure and the second magnetic structure.
The first magnetic structure, the second magnetic structure, and the tunnel barrier are aligned in the first direction.
At least one of the first magnetic structure and the second magnetic structure is
With a vertical magnetic layer,
Includes a polarization-enhancing layer interposed between the tunnel barrier and the vertical magnetic layer.
The polarization-enhanced layer comprises a cobalt iron carbon layer having a tetragonal deformed crystal structure with a crystal plane parallel to the crystal plane of the tunnel barrier.
The polarization strengthening layer has a magnetization direction parallel to or antiparallel to the first direction.
A substrate separated from the tunnel barrier via the second magnetic structure,
Further comprising a second electrode between the substrate and the second magnetic structure.
The second magnetic structure includes the polarization strengthening layer, the vertical magnetic layer, the exchange bond layer between the polarization strengthening layer and the vertical magnetic layer, and the non-between the polarization strengthening layer and the exchange bond layer. Contains a magnetic metal layer,
The tunnel barrier includes one surface, and the polarization strengthening layer is a magnetic storage element that is in direct contact with the one surface of the tunnel barrier . The polarization-enhanced layer comprises (Co _x Fe _100-x ) _100-z C _z .
The magnetic storage element according to claim 8 or 9 , wherein x is greater than 0%, less than 50%, or the same, and z is 2% to 8%. The polarization strengthening layer contains (Co _x Fe _100-x ) _{100-z-a Cz Ba} .
The magnetic storage element according to claim 8 or 9 , wherein x is greater than 0%, less than 50%, or the same, and z + a is 2% to 8%. The vertical magnetic layer has a magnetization direction that is parallel to or antiparallel to the first direction.
The magnetic storage element according to claim 8 or 9 , wherein the magnetization direction of the polarization strengthening layer can be changed in parallel with the magnetization direction of the vertical magnetic layer.

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