JP6996857B2 - Measurement method for semiconductor processing equipment and semiconductor processing fluids - Google Patents

Description

The present invention relates to a semiconductor processing apparatus for detecting the state of a fluid such as a processing liquid inside a tank containing a semiconductor material, and a method for measuring the properties of the treated fluid in the tank.

When a fluid such as a treatment liquid is stored inside the tank and the processed material is housed inside the tank to manufacture or process the processed material, light is irradiated from the outside of the tank into the tank to scatter the light. A technique for inspecting and measuring the state of a processed material inside a tank by imaging light is known. As these devices, for example, Patent Document 1 (Japanese Patent Laid-Open No. 5928146), Patent Document 2 (Japanese Patent Laid-Open No. 2007-1710112), Patent Document 3 (Japanese Patent Laid-Open No. 2015-195270) and the like are known. ..

Patent Document 1 uses the photoreflectance method as a semiconductor manufacturing technique. While etching a semiconductor device, light is applied to the semiconductor inside the tank from outside the tank to determine the reflectance of the probe light, which is the reflected light. A device for measuring various detailed information such as a surface recombination rate with respect to a semiconductor surface by measuring and measuring a vibration waveform of the energy of the probe light and the amount of change in the reflected light is disclosed.

Further, in Patent Document 2, in order to remotely and in real time measure the number of lasers composed of a specific substance floating in a limited space in the atmosphere, the number of aerosols containing a specific substance, or the amount contained in the aerosols. Laser irradiation of the aerosol, and as a result, identification of fluorescence, phosphorescence, photoluminescence, etc. emitted by laser light excitation whose wavelength is different from the laser light emitted by the specific substance due to the interaction between the laser light and the specific substance. A technique for visualizing the peculiar light generated by the substance of the above, measuring an image, and counting by image processing is disclosed.

Patent Document 3 includes a phosphoric acid concentration measuring unit provided with a Raman spectroscope in the middle of a supply path for supplying a phosphoric acid solution to a processing tank for measuring the phosphoric acid concentration in a phosphoric acid solution which is a semiconductor processing liquid. The substrate processing apparatus is disclosed.

Japanese Patent No. 5928146 Japanese Unexamined Patent Publication No. 2007-171012 JP-A-2015-195270

However, although the technique of Patent Document 1 inspects and measures the surface texture of a semiconductor, there is a problem that the state of a fluid in a tank cannot be measured. That is, when the fluid is stored in the tank and the semiconductor material is immersed in the fluid for processing, it is important to detect the state of the fluid as in the case of measuring the properties of the semiconductor surface. There is a problem that it is impossible to measure the properties of a fluid with the first technique.

The technique of Patent Document 2 detects the emission of aerosol by laser irradiation when a specific substance is added to a group of particles suspended in air to measure the concentration, and the specific substance is specified for the semiconductor material in the tank. There is also a problem that a substance has an influence, and there is a problem that it is difficult to use it in a semiconductor processing apparatus because a semiconductor material interferes with laser irradiation.

Further, in the technique of Patent Document 3, since the phosphoric acid concentration measuring unit is provided in the pipe for supplying or discharging the phosphoric acid solution to the phosphoric acid solution bath which is the processing tank for etching, the processing liquid in the processing tank is provided. There was a problem that it was not possible to directly measure the state of.

Therefore, the technical problem to be solved by the present invention is to provide a semiconductor processing apparatus capable of directly measuring the properties of the fluid stored in the tank in real time without affecting the semiconductor material. That is.

The present invention provides a semiconductor processing apparatus having the following configuration in order to solve the above technical problems.

According to the first aspect of the present invention, a processing tank capable of immersing a wafer in an internal fluid and a treatment tank.
A laser oscillator that irradiates the fluid with a planar laser beam from the outside of the processing tank.
A moving unit that moves the laser oscillator in a direction intersecting the surface of the laser beam, and
The laser light receives the scattered light generated by being scattered by the scattered particles in the fluid, and depends on the type of the scattered light determined by the relationship between the particle size of the scattered particles and the wavelength of the laser light. An optical detector that can acquire data and
A measurement calculation unit that measures and calculates the properties of a fluid in a specific region in the processing tank based on the data according to the type of scattered light acquired by the photodetector and the information on the irradiation position of the laser light.
Provided is a semiconductor processing apparatus comprising the above.

According to the second aspect of the present invention, the processing tank provides the semiconductor processing apparatus of the first aspect, characterized in that a transparent wall for transmitting laser light is provided over the moving range of the laser light. ..

According to the third aspect of the present invention, the moving unit is equipped with a guide member provided outside the processing tank and the laser oscillator, and is guided by the guide member and can move along the guide member. The first or second aspect of the semiconductor processing apparatus is provided, which comprises one drive unit.

According to a fourth aspect of the present invention, the moving unit includes a second drive unit that is equipped with the photodetector and is guided by the guide member and can move along the guide member. The semiconductor processing apparatus of three aspects is provided.

According to the fifth aspect of the present invention, the guide member of the moving unit is an annular rail provided around the processing tank.
The first drive unit and the second drive unit provide the semiconductor processing apparatus of the fourth aspect, characterized in that the rail can be moved independently.

According to the sixth aspect of the present invention, the semiconductor processing apparatus of the fifth aspect is characterized in that the first drive unit and the second drive unit can change the angle formed by each other at the position on the rail. I will provide a.

According to the seventh aspect of the present invention, the processing tank has a cylindrical shape.
The semiconductor processing apparatus according to any one of the fourth to sixth aspects, wherein the laser oscillator is provided so that the laser light passes through the center point of the processing tank. ..

According to the eighth aspect of the present invention, in the method of measuring the properties of the fluid stored inside the processing tank and capable of immersing the wafer.
A laser oscillator arranged outside the processing tank is moved in a direction intersecting the surface of the laser beam while irradiating the fluid with a planar laser beam.
At each position of the laser oscillator, the laser light receives the scattered light generated by being scattered by the scattered particles in the fluid, and is determined by the relationship between the particle size of the scattered particles and the wavelength of the laser light. Using an optical detector capable of acquiring data according to the type of the scattered light , the data corresponding to the type of the scattered light is acquired .
A semiconductor-processed fluid, characterized in that the properties of the fluid in a specific region in the processing tank are calculated based on data according to the type of scattered light at each position detected by the photodetector. Provides a measurement method.

According to the present invention, by irradiating a laser beam and detecting the scattered light generated by the laser beam with a photodetector, the properties of a fluid such as a cleaning liquid can be measured in real time. In addition, since the laser oscillator is moved in the direction of intersection along the surface of the laser beam and the measurement is performed by the photodetector, the inside of the processing tank can be scanned and measured, and the three-dimensional space inside the processing tank can be measured. It is possible to predict the properties of the fluid inside.

It is a perspective view which shows typically the structure of the wafer cleaning apparatus which concerns on 1st Embodiment of the semiconductor processing apparatus of this invention. It is a figure explaining the measurement of the scattered light generated by the irradiation of a laser beam. It is a figure explaining the principle of the generation of scattered light by tracer particles in a cleaning liquid. It is a figure which shows typically the example of the change of Raman spectrum with the change of the property of a treatment liquid film, (a) shows the case where the concentration becomes high, and (b) shows the case where the temperature becomes high. It is a flow chart which shows the measurement procedure of the cleaning liquid performed by the semiconductor processing apparatus of FIG. It is a perspective view which shows typically the structure of the wafer cleaning apparatus which concerns on 2nd Embodiment of the semiconductor processing apparatus of this invention. It is a schematic diagram which shows the moving state of a photodetector and a laser oscillator. It is a schematic diagram which shows the optical path of the scattered light detected by a photodetector. It is a schematic diagram explaining the change of the angle between a photodetector and a laser oscillator. It is a flow chart which shows the measurement procedure of the cleaning liquid performed by the semiconductor processing apparatus of FIG. It is a flowchart.

Hereinafter, the semiconductor processing apparatus according to the embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a perspective view schematically showing a configuration of a wafer cleaning device according to an embodiment of the semiconductor processing device of the present invention.

The wafer cleaning device 1 according to the present embodiment includes a cleaning tank 2 containing a cleaning liquid 100 for cleaning the wafer 30, a laser oscillator 3 that irradiates the cleaning tank 2 with laser light L, and the inside of the cleaning tank 2. It includes a light detector 4 capable of detecting the light emitted from the light detector, and a control calculation unit 5 that performs calculation processing based on the information detected by the light detector and the irradiation position of the laser beam L described later.

The cleaning tank 2 is preferably a material that does not affect the wafer 30 to be cleaned, and is a rectangular parallelepiped-shaped tank made of transparent materials such as quartz and Teflon (registered trademark). The cleaning tank 2 is at least referred to as a side wall 2a (hereinafter referred to as a first side wall) on the side irradiated with the laser beam L and a side wall 2b (hereinafter referred to as a second side wall) for detecting the inside of the tank facing the photodetector 4. ) Is composed of a transparent wall, and the inside of the tank can be optically confirmed from the outside.

The cleaning liquid 100 used for cleaning the wafer 30 is stored in the cleaning tank. The cleaning liquid 100 is prepared by mixing pure water and a chemical solution to adjust the concentration to a predetermined concentration. For example, the cleaning liquid 100 is supplied into the tank from the bottom surface of the cleaning tank 2 and has a side surface where the laser oscillator 3 and the photodetector 4 do not face each other. By overflowing from such things, it circulates inside and outside the tank. The cleaning liquid can be heated inside or outside the cleaning tank as needed.

The wafer 30 to be cleaned is arranged in a tank so that a single wafer or a plurality of wafers are immersed in the cleaning liquid 100. To arrange the wafer 30 in the tank, a wafer support member (not shown) is used.

The laser oscillator 3 provided on the outside of the washing tank 2 irradiates the planar laser beam L. In the present embodiment, the laser beam L is irradiated from a direction orthogonal to the first side wall 2a, which spreads in the height direction of the cleaning tank facing the laser oscillator 3.

The laser oscillator 3 may be configured by providing an optical member such as a lens in the light emitting portion 3a of the laser light so that the laser light spreads in a plane, or the linear laser light is reciprocated at high speed. It may be configured to be a planar laser beam. In this case, the output of the planar laser light is weakened, so that the level of scattered light described later may be low. On the other hand, a plurality of laser oscillators may be arranged in parallel to form a planar laser beam, and according to this configuration, it is possible to prevent a decrease in the output of the laser beam.

The laser oscillator 3 can be moved by the moving unit 6. The moving unit 6 includes a guide rail 7 extending in parallel with the first side wall 2a irradiated with the laser beam L, and a drive unit 8 guided by the guide rail 7 and movable along the guide rail 7. The drive unit 8 has a built-in drive source such as a motor, and its operation is controlled by the control calculation unit 5 as described later, and the movement, stop, movement speed, position on the guide rail 7, and the like are controlled. There is.

A laser oscillator 3 is mounted on the drive unit 8, and when the drive unit 8 moves along the guide rail 7, the laser oscillator 3 moves on the first side wall 2a of the processing tank 2 as shown by an arrow 90. Move along. That is, the laser beam L moves in a direction orthogonal to the plane direction thereof.

The guide rail 7 corresponds to an example of the guide member of the present invention, so that the laser light L emitted from the laser oscillator 3 as the laser oscillator 3 moves can reach the entire area of the first side wall 2a. It is preferable that it is configured in.

The laser beam L emitted from the laser oscillator 3 passes through the first side wall 2a, is guided into the cleaning tank 2, and passes through the cleaning liquid 100 stored in the tank.

As shown in FIG. 2, the laser light L that has reached the inside of the tank is scattered by the scattered particles in the cleaning liquid 100, and the scattered light R is generated. The scattered light R varies depending on the wavelength of the laser light and the scattered particles in the cleaning liquid 100. Specifically, geometric scattering, Rayleigh scattering, Mie scattering, Raman scattering and the like are included. These scatterings are determined by the relationship between the particle size of the scattered particles in the cleaning liquid 100 and the wavelength of the laser beam L.

For example, in the cleaning liquid 100, in order to generate the scattered light R, as shown in FIG. 3, the tracer particles 40 as the scattered particles have a particle diameter larger than the wavelength of the laser light L, and thus reach the particles. Laser light causes geometric scattering.

Further, when the wavelength of the laser beam L is about the same as the molecular particles of the cleaning liquid 100 which is a scattering particle, Mie scattering is generated, and when the molecular particle size is smaller than the wavelength, Rayleigh scattering is generated.

Furthermore, when the particle size of a molecule that is a scattered particle is smaller than the wavelength, the incident light collides with a vibrating molecule, and a part of the energy of the incident light is transferred to and from the vibration energy of the molecule. Raman scattering occurs, which is scattered light with a different wavelength. The Raman spectrum includes anti-Stoke scattered light having a shorter wavelength and stalk scattered light having a longer wavelength. By analyzing this Raman spectrum, the concentration and temperature of the cleaning liquid 100 can be measured. The Raman spectrum is increased by using a laser beam L having a wavelength close to the spectral wavelength of the molecular particles of the cleaning liquid 100.

In order to enhance the intensity of the Raman spectrum, two laser beams (pump light and Stokes light) having different angular frequencies may be used in combination, or the laser oscillator 3 may be provided with an auxiliary light source.

These scattered lights R pass through the second side wall 2b of the cleaning tank 2 and reach the photodetector 4 provided outside the cleaning tank 2 to be detected. The photodetector 4 is a detector capable of receiving the scattered light R to be detected and detecting its brightness, wavelength, and the like, and any one according to the characteristics of the scattered light can be used. For example, when it is desired to detect geometric scattering, a visible light camera can be preferably used, and by focusing on the gap and using the camera, scattered light by the cleaning liquid 100 in the gap can be detected. Further, when it is desired to detect a Raman spectrum, a detector for Raman scattering or the like can be used. In Raman scattering, there is a detection wavelength peculiar to the substance to be measured, and the property of the substance can be measured by measuring the wavelength peculiar to the substance to be measured.

Further, the photodetector 4 may include a plurality of types according to the characteristics of the scattered light. For example, it is possible to provide a detector for Raman scattering and a visible light camera, respectively.

In this embodiment, the photodetector is arranged in a direction orthogonal to the side wall 2b of the cleaning liquid. That is, the scattered light R is detected from the direction orthogonal to the laser light L.

The scattered light detected by the photodetector 4 is used by the control calculation unit 5 to identify the properties of the cleaning liquid 100. The detected scattered light differs depending on the photodetector 4 used. For example, in the case of geometric scattering, the captured image data or the like corresponds, and in the case of Raman scattering, the detected raw spectrum or position information corresponds. do. Further, the properties of the cleaning liquid 100 that can be measured are also determined by the characteristics of the scattered light. For example, in the case of image data, the flow velocity of the cleaning liquid 100 can be measured by comparing a plurality of sheets over time.

When the detector detects the raw spectrum, the Raman spectrum obtained by calibrating the raw spectrum is used, and the cleaning liquid 100 uses characteristics such as a change in the intensity of the spectrum and a shift in the spectrum depending on the concentration of the cleaning liquid 100 and the temperature of the cleaning liquid 100. It is possible to measure the concentration and temperature of. Furthermore, those properties can be mapped using location information.

FIG. 4 is a diagram schematically showing an example of a change in the Raman spectrum due to a change in the properties of the liquid film, and (a) shows a case where the concentration is high and (b) shows a case where the temperature is high. In the graphs of FIG. 5, the solid line shows the state before the change, and the broken line shows the state where the Raman spectrum changes due to the change in properties.

For these Raman spectrum shifts, wavelengths and intensities that change with temperature and concentration are specified. In FIG. 4, the peak of the spectrum indicated by reference numeral 50 is derived from water, and the peak of the spectrum indicated by reference numerals 51 and 52 is derived from the chemical solution.

When the concentration is high, as shown in FIG. 4A, the ratio of the chemical solution in the treatment liquid film is large and the ratio of water is small, so that the peak 50 derived from water decreases and the peak derived from the chemical solution is reduced. 51 and 52 increase. On the contrary, when the concentration is low, the peak 50 derived from water increases and the peaks 51 and 52 derived from the chemical solution decrease.

When the temperature of the treatment liquid film becomes high, as shown in FIG. 4 (b), the peak position shifts according to the temperature, and the intensity of the spectrum increases. Also, when the temperature is low, the opposite behavior is exhibited and the intensity of the spectrum is reduced.

For these concentrations and spectral shifts due to temperature, wavelengths and intensities that change with temperature and concentration are specified, so it is necessary to prepare calibration data created in advance based on these known data. is necessary. Then, the concentration and temperature of the cleaning liquid are calculated by comparing the Raman spectrum with the calibration data.

FIG. 5 is a flow chart showing a procedure for measuring a cleaning liquid performed by a semiconductor processing apparatus. As shown in FIG. 5, first, a chemical solution and pure water are supplied to the cleaning tank 2 to start circulation of the cleaning solution (S1). Next, the cleaning conditions are set (S2). Examples of the cleaning conditions include the temperature and concentration of the cleaning liquid. Further, the drive unit 8 is moved to the initial position along the guide rail 7 (S3). The initial position can be determined based on the measurement range of the washing tank 2.

Next, the wafer is moved into the cleaning tank 2 and cleaning is started (S4). During cleaning, the properties of the cleaning liquid are measured by measuring the laser light L and the scattered light R as described above in order to measure in real time whether the cleaning liquid 100 satisfies the predetermined conditions (S5, S6).

The control calculation unit 5 calculates the properties of the cleaning liquid based on the scattered light R by the above-mentioned photodetector 4 for each emission position of the laser light L moved by the moving unit 6. That is, the control calculation unit controls the position of the drive unit 8 of the mobile unit 6, and can calculate the properties of the cleaning liquid for each emission position of the laser beam L determined by the laser oscillator 3.

Specifically, until the irradiation position of the laser beam L reaches the final position, the irradiation of the laser beam L, the measurement of the scattered light R, and the movement of the drive unit 8 are performed at each predetermined position (S5 to S5). S8). The movement width of the drive unit 8 is not particularly limited, and can be appropriately determined according to the accuracy of measurement.

In the semiconductor processing apparatus according to the present embodiment, the cleaning tank 2 is irradiated with the planar laser light L, and the properties of the cleaning liquid 100 can be measured for the portion irradiated with the laser light L. Further, since the laser light L is moved in the direction orthogonal to the surface of the laser light by the moving unit 6, the properties of the cleaning liquid in the washing tank at the irradiation position of the laser light L can be measured.

Further, since both the first side wall 2a, which is the transmission surface of the laser light L, and the side wall 2b, which is the transmission surface of the scattered light R by the light detector, are configured to be orthogonal to these lights, the light is transmitted through the washing tank. , There is no influence of refraction, and it is possible to facilitate the calculation by the control calculation unit 5.

By repeating these operations, the state of the cleaning liquid 100 existing in a specific region in the cleaning tank 2 is measured by mapping the irradiation position of the laser beam L and the properties of the cleaning liquid at the position in association with each other. Can be done (S9).

When the cleaning conditions are changed and the cleaning liquid is measured again, the drive unit 8 can be moved to the initial position (S11), and the operations S5 to S8 can be repeated.

According to the semiconductor processing apparatus according to the present embodiment, the properties of the cleaning liquid on the surface irradiated with the laser light L can be measured by measuring the scattered light R in which the surface-shaped laser light L is scattered by the cleaning liquid. .. Further, by moving the laser beam L in a direction orthogonal to the plane direction thereof, it is possible to predict the properties of the cleaning liquid in the three-dimensional space inside the treatment tank.

(Second Embodiment)
FIG. 6 is a perspective view schematically showing the configuration of the wafer cleaning device according to the second embodiment of the semiconductor processing device of the present invention. Since the wafer cleaning device according to the second embodiment has many common configurations with the wafer cleaning device 1 according to the first embodiment, the differences will be mainly described by comparing the two.

The wafer cleaning device 11 according to the present embodiment includes a cleaning tank 12 containing a cleaning liquid 100 for cleaning the wafer 30, a laser oscillator 13 that irradiates the cleaning tank 12 with laser light L, and the inside of the cleaning tank 12. It is provided with a photodetector 14 capable of detecting the light emitted from the light detector, and a control calculation unit 15 that performs calculation processing based on the information of the light detected by the photodetector and the irradiation position of the laser beam L described later.

The cleaning tank 12 is a bottomed cylindrical container whose side surface 12a is made of a transparent material at least, and is configured so that the cleaning liquid is supplied from the bottom surface or the like and the cleaning liquid 100 can be circulated inside. The wafer 30 to be cleaned is arranged in a tank so that a single wafer or a plurality of wafers are immersed in the cleaning liquid 100.

The laser oscillator 13 and the photodetector 14 provided on the outside of the cleaning tank 12 are movable by the moving unit 16. The moving unit 16 has an annular guide rail 17 concentrically arranged with the washing tank 12, and a first drive unit guided by the guide rail 17 and movable along the guide rail 17, as shown by an arrow 90 in FIG. 18 and a second drive unit 19 are provided.

The guide rail 17 is a rail having the same activation as the circumferential shape of the cleaning tank 12, and is arranged concentrically with the cleaning tank 12. As a result, the first drive unit 18 and the second drive unit 19 that can move along the guide rail 17 always move with the same separation distance as the peripheral wall 12a of the cleaning tank 12.

The first and second drive units 18 and 19 have built-in drive sources such as motors, and their operations are independently controlled by the control calculation unit 15 as described later, and the movement, stop, movement speed, and guide are controlled respectively. The position on the rail 17 is controlled.

The laser oscillator 13 is fixed to the first drive unit 18 and irradiates a planar laser beam L having a spread in the height direction of the cleaning tank 12 toward the center of the cleaning tank 12. As shown in FIG. 7, in the present embodiment, the laser oscillator 13 is arranged so that the laser beam L passes through the center of the cleaning tank 12, whereby the laser beam L covers a wide range in the cleaning tank 12. It is designed to be transparent. As the first drive unit 18 moves along the guide rail 17, the laser oscillator 13 moves around the processing tank 12 as shown by the arrow 91. That is, the laser beam L always passes through the center of the cleaning tank 12.

Further, the photodetector 14 is fixed to the second drive unit 19, and its optical axis is arranged so as to face the center of the cleaning tank 12. As the second drive unit 19 moves along the guide rail 17, the photodetector 14 moves around the processing tank 12. That is, the laser beam L orbits around the center of the cleaning tank 12 as shown by the arrow 92 in FIG.

In the above embodiment, the first drive unit 18 and the second drive unit 19 move on the same guide rail, but they can also be configured to move along independent guide rails.

The laser beam L emitted from the laser oscillator 13 passes through the peripheral wall 12a, is guided into the cleaning tank 12, and passes through the cleaning liquid 100 stored in the tank. The laser light L that has reached the inside of the tank is scattered by the scattered particles in the cleaning liquid 100, and the scattered light R is generated.

These scattered lights R pass through the peripheral wall 12a of the cleaning tank 12 and reach the photodetector 14 provided outside the cleaning tank 12 to be detected. The photodetector 14 is a detector capable of receiving the scattered light R to be detected and detecting its brightness, wavelength, and the like, and any one according to the characteristics of the scattered light can be used.

It is preferable that the photodetector 14 is used in combination with a spectroscopic means of scattered light R, if necessary. As the spectroscopic means, a spectroscope, an interference filter, or the like can be used.

The scattered light R detected by the photodetector 14 is used by the control calculation unit 15 to identify the properties of the cleaning liquid 100. The control calculation unit 15 also corrects the influence of the refraction of the scattered light R. That is, when the light receiving direction of the photodetector 14 is not orthogonal to the peripheral wall 12a of the cleaning tank, it is refracted when the scattered light is transmitted, so it is preferable to correct it in consideration of the influence of the refraction.

FIG. 8 is a schematic diagram showing an optical path of scattered light detected by a photodetector. As described above, since the optical axis of the photodetector 14 is in the direction of the central axis of the cleaning tank 12, the scattered light R1 emitted from the central axis is transmitted orthogonally to the peripheral wall 12a, so that the influence of refraction occurs. do not have. On the other hand, since the incident angle of the scattered light R2 that is emitted toward both ends of the cleaning tank is not a right angle when passing through the peripheral wall 12a, the influence of refraction occurs when the peripheral wall 12a is transmitted. Therefore, the control calculation unit 15 corrects the position of the scattered light located on both ends thereof in consideration of the angle of incidence of the scattered light on the peripheral wall 12a.

To correct the refraction of the scattered light R, the angle at which the scattered light R is incident on the peripheral wall 12a is calculated based on the angle formed by the scattered light R and the light detector 14, and the cleaning liquid 100 and the peripheral wall 12a are corrected according to the angle. It can be calculated based on the refractive index.

FIG. 10 is a flow chart showing a procedure for measuring a cleaning liquid performed by the semiconductor processing apparatus according to the present embodiment. As shown in FIG. 10, first, the chemical solution and pure water are supplied to the cleaning tank 12, the circulation of the cleaning solution is started, and the cleaning conditions are set (S21, S22). In the present embodiment, the guide rail 17 is configured in an annular shape, and it is not necessary to move the first drive unit 18 to the initial position, and the detection can be started from a certain position at the time of measurement. However, the first drive unit 18 may be moved to the initial position prior to the detection.

Next, the wafer is moved into the cleaning tank 2 and cleaning is started (S23). During cleaning, the properties of the cleaning liquid are measured by measuring the laser light L and the scattered light R as described above in order to measure in real time whether the cleaning liquid 100 satisfies the predetermined conditions (S25).

In the present embodiment, the second drive unit 19 is operated to adjust the angle of the photodetector 14 to the position where the light intensity is maximized (S26).

The control calculation unit 15 calculates the properties of the cleaning liquid based on the scattered light R by the above-mentioned photodetector 14 for each emission position of the laser light L irradiated by the first detection unit 18. That is, the control calculation unit 15 controls the position of the first drive unit 18 of the moving unit 6, and specifies the position of the cleaning liquid 100 irradiated by the laser beam L on the guide rail 17 where the first drive unit is located. Can be calculated.

The control calculation unit 15 performs processing such as irradiation of the laser beam L and measurement of the scattered light R at each predetermined position until the irradiation position of the laser beam L reaches the final position for irradiating a specific region set in advance. (S27 to S28).

When the cleaning conditions are changed and the cleaning liquid is measured again, the first drive unit 18 can be moved to the initial position (S31), and the operations of S26 to S28 can be repeated.

As described above, the laser oscillator 13 is provided in the first drive unit 18 that moves along the guide rail 17, so that the position of the cleaning liquid 100 reached by the laser beam L is determined by the movement of the first drive unit 18. Can be changed. Further, since the photodetector 14 is provided in the second drive unit 19 that moves along the guide rail 17, the second drive unit 19 is driven by following the movement of the first drive unit 18. As the laser beam L moves, the light receiving direction of the photodetector 14 can be made constant.

Further, according to the present embodiment, even if the location of the cleaning liquid irradiated by the laser beam L by the laser oscillator 13 changes, the photodetector 14 also moves at the same time, so that the irradiation position by the laser beam L and the photodetector 14 The distance to and from can always be constant. That is, since the distance between the irradiation position and the photodetector 14 does not change, the attenuation of the scattered light R by the cleaning liquid 100 or the like in the optical path is constant, which affects the calculation of the properties of the cleaning liquid 100 by the control calculation unit 15. Can be reduced.

The light receiving direction of the photodetector 14 may be directed to a direction in which the scattered light is largely generated due to the angle dependence of the scattered light R without the laser light L being directly incident. For example, in the case of Rayleigh scattering, since there is little scattered light scattered in the direction perpendicular to the incident light, the phases of both are adjusted so that the angle formed by the first drive unit and the second drive unit is obtuse. can do.

The light receiving direction of the photodetector 14 can be freely changed by changing the angle formed by the first drive unit 18 and the second drive unit 19. That is, as shown in FIG. 9, by making the angle of the second driving unit 19 different from that of the first driving unit 18, the angles α and β formed by the two can be arbitrarily set, and the intensity of the scattered light R can be increased. It can be detected by the photodetector 14 at any position where it comes out most strongly.

As described above, according to the semiconductor processing apparatus according to the present embodiment, by irradiating a laser beam and detecting the scattered light generated by the laser beam with a photodetector, the properties of a fluid such as a cleaning liquid can be detected in real time. Can be measured. In addition, since the laser oscillator is moved in the direction of intersection along the surface of the laser beam and the measurement is performed by the photodetector, the inside of the processing tank can be scanned and measured, and the three-dimensional space inside the cleaning tank can be measured. It is possible to predict the properties of the fluid inside. Further, since the properties of these cleaning liquids 100 can directly measure the state in the tank, they can be used for controlling the state of the washing tank and the like.

The present invention is not limited to the above embodiment, and can be implemented in various other embodiments. For example, although the above embodiment is a wafer cleaning device, it can also be applied to a semiconductor manufacturing device for performing processing such as etching and plating. Further, the fluid is not limited to a liquid, and can be applied to a case where a gas is used as a fluid, for example, in a vapor deposition process or a sputtering process.

Further, in all of the above embodiments, the laser beam L is irradiated from the side, but it may be configured to irradiate from the upper position or the lower position of the washing tank.

1 Wafer cleaning device 2,12 Cleaning tank 2a, 2b, 12a Tank wall 3,13 Laser oscillator 4,14 Photodetector 5,15 Control calculation unit 6,16 Mobile unit 7,17 Guide rail 8 Drive unit 18 First drive Unit 19 Second drive unit 30 Wafer L Laser light R Scattered light 100 Cleaning liquid

Claims (8)

A processing tank that can immerse the wafer in the internal fluid,
A laser oscillator that irradiates the fluid with a planar laser beam from the outside of the processing tank.
A moving unit that moves the laser oscillator in a direction intersecting the surface of the laser beam, and
The laser light receives the scattered light generated by being scattered by the scattered particles in the fluid, and depends on the type of the scattered light determined by the relationship between the particle size of the scattered particles and the wavelength of the laser light. An optical detector that can acquire data and
A measurement calculation unit that measures and calculates the properties of a fluid in a specific region in the processing tank based on the data according to the type of scattered light acquired by the photodetector and the information on the irradiation position of the laser light.
A semiconductor processing apparatus, characterized in that it is provided with. The semiconductor processing apparatus according to claim 1, wherein the processing tank is provided with a transparent wall for transmitting laser light over a moving range of the laser light. The moving unit is characterized by including a guide member provided outside the processing tank and a first drive unit on which the laser oscillator is mounted and guided by the guide member and movable along the guide member. The semiconductor processing apparatus according to claim 1 or 2. The semiconductor processing apparatus according to claim 3, wherein the moving unit includes a second drive unit that is equipped with the photodetector and is guided by the guide member and can move along the guide member. The guide member of the moving unit is an annular rail provided around the processing tank.
The semiconductor processing apparatus according to claim 4, wherein the first drive unit and the second drive unit can move the rail independently. The semiconductor processing apparatus according to claim 5 , wherein the first drive unit and the second drive unit can change the angle formed by each other at a position on the rail. The processing tank has a cylindrical shape and has a cylindrical shape.
The semiconductor processing apparatus according to any one of claims 4 to 6, wherein the laser oscillator is provided so that the laser light passes through a center point of the processing tank. In the method of measuring the properties of the fluid stored inside the processing tank and capable of immersing the wafer.
A laser oscillator arranged outside the processing tank is moved in a direction intersecting the surface of the laser beam while irradiating the fluid with a planar laser beam.
At each position of the laser oscillator, the laser light receives the scattered light generated by being scattered by the scattered particles in the fluid, and is determined by the relationship between the particle size of the scattered particles and the wavelength of the laser light. Using an optical detector capable of acquiring data according to the type of the scattered light , the data corresponding to the type of the scattered light is acquired .
A semiconductor-processed fluid, characterized in that the properties of the fluid in a specific region in the processing tank are calculated based on the data corresponding to the type of scattered light at each position acquired by the photodetector. Measurement method.

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