JP6966110B2 - Electrical path switcher - Google Patents

Electrical path switcher Download PDF

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JP6966110B2
JP6966110B2 JP2020074618A JP2020074618A JP6966110B2 JP 6966110 B2 JP6966110 B2 JP 6966110B2 JP 2020074618 A JP2020074618 A JP 2020074618A JP 2020074618 A JP2020074618 A JP 2020074618A JP 6966110 B2 JP6966110 B2 JP 6966110B2
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electrical path
diode
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JP2021175006A (en
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悦郎 河田
智則 津田
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株式会社アドテックプラズマテクノロジー
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Description

本発明は、入力端子から入力される交流電力を複数の出力端子のいずれかから出力する電気経路切替器に関する。 The present invention relates to an electric path switcher that outputs AC power input from an input terminal from any of a plurality of output terminals.

従来、電気経路を比較的高速に切り替えるために、真空リレーやＰＩＮダイオードを用いた電気経路切替器が利用されている。表１に示すように、真空リレーおよびＰＩＮダイオードには一長一短がある。例えば、真空リレーは、大電力を通電することができるが、応答性が悪く、切替回数（寿命）が短い。一方、ＰＩＮダイオードは、大電力の通電には不向きであるが、応答性に優れ、寿命も長い。

Figure 0006966110
Conventionally, in order to switch an electric path at a relatively high speed, an electric path switch using a vacuum relay or a PIN diode has been used. As shown in Table 1, vacuum relays and PIN diodes have advantages and disadvantages. For example, a vacuum relay can energize a large amount of electric power, but has poor responsiveness and a short switching frequency (life). On the other hand, the PIN diode is not suitable for energizing a large amount of electric power, but has excellent responsiveness and a long life.
Figure 0006966110

なお、ＰＩＮダイオードを用いた電気経路切替器は、例えば、特許文献１に開示されている。 An electric path switch using a PIN diode is disclosed in Patent Document 1, for example.

特開平３−４５０２２号公報Japanese Unexamined Patent Publication No. 3-45022

本発明は、上記の状況に鑑みてなされたものであって、真空リレーを用いた場合に得られる利点とＰＩＮダイオードを用いた場合に得られる利点とを併せ持った電気経路切替器を提供することを課題とする。 The present invention has been made in view of the above circumstances, and provides an electric path switcher having both the advantages obtained when a vacuum relay is used and the advantages obtained when a PIN diode is used. Is the subject.

上記課題を解決するために、本発明に係る電気経路切替器は、入力端子と複数の出力端子とを備え、入力端子から入力される所定周波数の交流電力を複数の出力端子のいずれかから出力するものであって、入力端子を複数の出力端子のそれぞれに接続する複数の電気経路と、電気経路のそれぞれに設けられた、接地電位を基準として動作する９０度移相器と、９０度移相器と出力端子との間において電気経路のそれぞれに設けられた地絡手段とをさらに備え、地絡手段は、電気経路と接地電位との間に設けられた少なくとも１つの半導体スイッチ素子を含み、交流電力を出力すべきではない出力端子のための電気経路の地絡手段が当該出力端子を地絡させると、当該電気経路の９０度移相器の入力端子から見た所定周波数におけるインピーダンスが地絡させていないときの１０倍以上になることを特徴とする。
In order to solve the above problems, the electric path switch according to the present invention includes an input terminal and a plurality of output terminals, and outputs AC power of a predetermined frequency input from the input terminals from any of the plurality of output terminals. A plurality of electric paths for connecting input terminals to each of a plurality of output terminals, a 90-degree phase shifter provided in each of the electric paths and operating with reference to the ground potential, and a 90-degree shift. Further comprising ground fault means provided in each of the electrical paths between the phase unit and the output terminal, the ground fault means includes at least one semiconductor switch element provided between the electrical path and the ground potential. When the ground fault means of the electric path for the output terminal that should not output AC power grounds the output terminal, the impedance at the predetermined frequency seen from the input terminal of the 90 degree phase shifter of the electric path is increased. It is characterized in that it is 10 times or more that when it is not grounded.

９０度移相器の具体的な構成としては、例えば、（１）π型のフィルタ回路を含んだものや、（２）入力端子から入力される交流電力の波長の１／４の長さの同軸ケーブルを含んだものが考えられる Specific configurations of the 90-degree phase shifter include, for example, (1) one including a π-type filter circuit, and (2) a length of 1/4 of the wavelength of the AC power input from the input terminal. Possible one including coaxial cable

また、地絡手段の具体的な構成としては、例えば、（１）電気経路にアノードが接続された第１ダイオードと、電気経路にカソードが接続された第２ダイオードと、ドレインが第１ダイオードのカソードに接続されるとともにソースが接地電位に接続されたＮチャネル型のＭＯＳＦＥＴと、ドレインが第２ダイオードのアノードに接続されるとともにソースが接地電位に接続されたＰチャネル型のＭＯＳＦＥＴとを含んだものや、（２）電気経路にアノードが接続された第１ダイオードと、電気経路にカソードが接続された第２ダイオードと、コレクタが第１ダイオードのカソードに接続されるとともにエミッタが接地電位に接続されたＮＰＮ型のトランジスタと、コレクタが第２ダイオードのアノードに接続されるとともにエミッタが接地電位に接続されたＰＮＰ型のトランジスタとを含んだものや、（３）カソードが電気経路に接続されるとともにアノードが接地電位に接続された第１サイリスタと、アノードが電気経路に接続されるとともにカソードが接地電位に接続された第２サイリスタとを含んだものや、（４）一方の端子が電気経路に接続されるとともに他方の端子が接地電位に接続されたトライアックを含んだものが考えられる。 Specific configurations of the ground fault means include, for example, (1) a first diode having an anode connected to an electric path, a second diode having a cathode connected to an electric path, and a first diode having a drain. including the N-channel MOSFET having a source connected to a ground potential is connected to the cathode, the drain of P-channel type having a source connected to a ground potential is connected to the anode of the second diode and a MOSFET (2) The first diode with the anode connected to the electrical path, the second diode with the cathode connected to the electrical path, the collector connected to the cathode of the first diode, and the emitter connected to the ground potential . A PNP type transistor in which the collector is connected to the anode of the second diode and the emitter is connected to the ground potential , and (3) the cathode is connected to the electric path. A first thyristor whose anode is connected to the ground potential and a second thylister whose anode is connected to the electrical path and whose cathode is connected to the ground potential are included, and (4) one terminal is the electrical path. It is conceivable that the other terminal includes a triac connected to the ground potential.

本発明によれば、真空リレーを用いた場合に得られる利点とＰＩＮダイオードを用いた場合に得られる利点とを併せ持った電気経路切替器、すなわち、大電力の通電が可能で、応答性に優れ、かつ長寿命な電気経路切替器を提供することができる。 According to the present invention, an electric path switch having both the advantages obtained when a vacuum relay is used and the advantages obtained when a PIN diode is used, that is, a high-power energization is possible and the responsiveness is excellent. Moreover, it is possible to provide an electric path switch having a long life.

本発明の実施例に係る電気経路切替器の回路図である。It is a circuit diagram of the electric path switcher which concerns on embodiment of this invention. 図１に示した電気経路切替器の動作を示すタイミングチャートである。It is a timing chart which shows the operation of the electric path switcher shown in FIG. 図１に示した９０度移相器の変形例を示す図である。It is a figure which shows the modification of the 90 degree phase shifter shown in FIG. 図１に示した地絡手段の変形例を示す図である。It is a figure which shows the modification of the ground fault means shown in FIG. 本発明の変形例に係る電気経路切替器の回路図である。It is a circuit diagram of the electric path switch which concerns on the modification of this invention.

以下、添付図面を参照しながら、本発明に係る電気経路切替器の実施例について説明する。 Hereinafter, examples of the electric circuit switch according to the present invention will be described with reference to the accompanying drawings.

［実施例］
図１に、本発明の実施例に係る電気経路切替器１０を示す。電気経路切替器１０は、高周波電源装置２０が出力する所定周波数ｆｉｎ［Ｈｚ］の高周波電力を２つの負荷装置３０Ａ，３０Ｂのいずれかに選択的に供給するためのもので、高周波電源装置２０に接続される入力端子１１と、第１の負荷装置３０Ａに接続される第１の出力端子１２Ａと、第２の負荷装置３０Ｂに接続される第２の出力端子１２Ｂとを備えている。 [Example]
FIG. 1 shows an electric path switch 10 according to an embodiment of the present invention. Electrical path switch 10 is for selectively supplying a high frequency power of a predetermined frequency f in [Hz] of the high-frequency power supply 20 outputs two load devices 30A, in any of 30B, the high-frequency power supply device 20 The input terminal 11 connected to the first load device 30A, the first output terminal 12A connected to the first load device 30A, and the second output terminal 12B connected to the second load device 30B are provided.

電気経路切替器１０は、入力端子１１を第１の出力端子１２Ａに接続する第１の電気経路１３Ａと、第１の電気経路１３Ａの途中に設けられたＧＮＤ基準の第１の９０度移相器１４Ａと、第１の９０度移相器１４Ａと第１の出力端子１２Ａとの間において第１の電気経路１３Ａに設けられた第１の地絡手段１５Ａとを備えている。 The electric circuit switch 10 has a first electric path 13A for connecting the input terminal 11 to the first output terminal 12A and a first 90-degree phase shift of the GND reference provided in the middle of the first electric path 13A. It includes a device 14A and a first ground fault means 15A provided in a first electrical path 13A between the first 90 degree phase shifter 14A and the first output terminal 12A.

電気経路切替器１０は、入力端子１１を第２の出力端子１２Ｂに接続する第２の電気経路１３Ｂと、第２の電気経路１３Ｂの途中に設けられたＧＮＤ基準の第２の９０度移相器１４Ｂと、第２の９０度移相器１４Ｂと第２の出力端子１２Ｂとの間において第２の電気経路１３Ｂに設けられた第２の地絡手段１５Ｂとを備えている。 The electric circuit switch 10 has a second electric circuit 13B that connects the input terminal 11 to the second output terminal 12B, and a second 90-degree phase shift of the GND reference provided in the middle of the second electric circuit 13B. It includes a device 14B and a second ground fault means 15B provided in a second electrical path 13B between the second 90 degree phase shifter 14B and the second output terminal 12B.

第１の９０度移相器１４Ａは、第１の電気経路１３Ａに介装された第１のインダクタＬ１と、第１のインダクタＬ１の一端とＧＮＤとの間に設けられた第１のコンデンサＣ１と、第１のインダクタＬ１の他端とＧＮＤとの間に設けられた第２のコンデンサＣ２とからなるπ型のフィルタ回路を含んでいる。 The first 90-degree phase shifter 14A is a first capacitor C1 provided between the first inductor L1 interposed in the first electric path 13A, one end of the first inductor L1 and the GND. A π-type filter circuit including the other end of the first inductor L1 and the second capacitor C2 provided between the GND is included.

第１のインダクタＬ１のインダクタンスをＬ［Ｈ］、第１のコンデンサＣ１のキャパシタンスをＣ［Ｆ］とすると、上記所定周波数ｆｉｎ、インダクタンスＬおよびキャパシタンスＣの間には、次式の関係がある。

Figure 0006966110
すなわち、第１のインダクタＬ１のインダクタンスＬおよび第１のコンデンサＣ１のキャパシタンスＣは、第１のインダクタＬ１と第１のコンデンサＣ１とを並列に接続した回路の共振周波数が、高周波電源装置２０が出力する高周波電力の周波数ｆｉｎに一致するように設計されている。第２のコンデンサＣ２のキャパシタンスは、第１のコンデンサＣ１のキャパシタンスＣと同一であってもよいし、異なっていてもよい。 L [H] the inductance of the first inductor L1, the capacitance of the first capacitor C1 and C [F], the predetermined frequency f in, between the inductance L and capacitance C are related by the following equation ..
Figure 0006966110
 That is, the inductance L of the first inductor L1 and the capacitance C of the first capacitor C1 are such that the resonance frequency of the circuit in which the first inductor L1 and the first capacitor C1 are connected in parallel is output by the high frequency power supply device 20. It is designed to match the frequency f in of the high-frequency power. The capacitance of the second capacitor C2 may be the same as or different from the capacitance C of the first capacitor C1.

第１の地絡手段１５Ａは、第１の電気経路１３Ａにアノードが接続された第１のダイオードＤ１と、第１の電気経路１３Ａにカソードが接続された第２のダイオードＤ２と、ドレインが第１のダイオードＤ１のカソードに接続されるとともにソースがＧＮＤに接続されたＮチャネル型のＭＯＳＦＥＴからなる第１の半導体スイッチ素子Ｓ１と、ドレインが第２のダイオードＤ２のアノードに接続されるとともにソースがＧＮＤに接続されたＰチャネル型のＭＯＳＦＥＴからなる第２の半導体スイッチ素子Ｓ２とを含んでいる。 The first ground fault means 15A has a first diode D1 having an anode connected to the first electric path 13A, a second diode D2 having a cathode connected to the first electric path 13A, and a drain. The first semiconductor switch element S1 composed of an N-channel type MOSFET connected to the cathode of the diode D1 and the source connected to the GND, and the drain connected to the anode of the second diode D2 and the source It includes a second semiconductor switch element S2 made of a P-channel type MOSFET connected to a diode.

外部からのゲート制御信号により第１の半導体スイッチ素子Ｓ１をＯＮさせると、第１の電気経路１３Ａ→第１のダイオードＤ１→第１の半導体スイッチ素子Ｓ１→ＧＮＤの電流経路が形成される。また、外部からのゲート制御信号により第２の半導体スイッチ素子Ｓ２をＯＮさせると、ＧＮＤ→第２の半導体スイッチ素子Ｓ２→第２のダイオードＤ２→第１の電気経路１３Ａの電流経路が形成される。このため、２つの半導体スイッチ素子Ｓ１，Ｓ２の両方をＯＮさせれば、第１の電気経路１３Ａの電位がＧＮＤ電位よりも高い場合および低い場合の両方において、第１の電気経路１３Ａ（および第１の出力端子１２Ａ）を地絡させることができる。 When the first semiconductor switch element S1 is turned on by a gate control signal from the outside, a current path of the first electric path 13A → the first diode D1 → the first semiconductor switch element S1 → GND is formed. Further, when the second semiconductor switch element S2 is turned on by the gate control signal from the outside, the current path of GND → the second semiconductor switch element S2 → the second diode D2 → the first electric path 13A is formed. .. Therefore, if both of the two semiconductor switch elements S1 and S2 are turned on, the first electric path 13A (and the first electric path 13A) (and the first electric path 13A) are used in both cases where the potential of the first electric path 13A is higher and lower than the GND potential. The output terminal 12A) of 1 can be grounded.

第１の地絡手段１５Ａが第１の電気経路１３Ａを地絡させると、第１の９０度移相器１４Ａの第２のコンデンサＣ２が短絡され、第１の９０度移相器１４Ａは、第１のインダクタＬ１と第１のコンデンサＣ１との並列回路となる。また、前述の通り、この並列回路の共振周波数は、高周波電源装置２０が出力する高周波電力の周波数ｆｉｎに一致している。すなわち、第１の地絡手段１５Ａが第１の電気経路１３Ａを地絡させると、第１の９０度移相器１４Ａが周波数ｆｉｎにおける並列共振回路として機能するようになる。そして、その結果、入力端子１１から見た第１の９０度移相器１４Ａのインピーダンスは無限大となり、高周波電力は第１の出力端子１２Ａから出力されなくなる。 When the first ground fault means 15A grounds the first electric path 13A, the second capacitor C2 of the first 90 degree phase shifter 14A is short-circuited, and the first 90 degree phase shifter 14A is moved to the first 90 degree phase shifter 14A. It is a parallel circuit of the first inductor L1 and the first capacitor C1. Further, as described above, the resonance frequency of this parallel circuit is consistent with the frequency f in of the high frequency power high-frequency power supply device 20 outputs. That is, when the first ground unit 15A causes the ground fault the first electrical path 13A, the first 90 degree phase shifter 14A comes to function as a parallel resonance circuit at the frequency f in. As a result, the impedance of the first 90-degree phase shifter 14A seen from the input terminal 11 becomes infinite, and the high-frequency power is not output from the first output terminal 12A.

第２の９０度移相器１４Ｂは、第１の９０度移相器１４Ａと同一の構成を有している。また、第２の地絡手段１５Ｂは、第１の地絡手段１５Ａと同一の構成を有している。 The second 90-degree phase shifter 14B has the same configuration as the first 90-degree phase shifter 14A. Further, the second ground fault means 15B has the same configuration as the first ground fault means 15A.

図２に示すように、第１の地絡手段１５Ａの２つの半導体スイッチ素子Ｓ１，Ｓ２がＯＦＦし、かつ第２の地絡手段１５Ｂの２つの半導体スイッチ素子Ｓ１，Ｓ２がＯＮしているとき、入力端子１１から見た第１の９０度移相器１４Ａのインピーダンスは通常のインピーダンス（例えば、５０［Ω］）のままで、入力端子１１から見た第２の９０度移相器１４Ｂのインピーダンスは無限大なので、入力端子１１から入力される高周波電力は第１の出力端子１２Ａのみから出力される。反対に、第１の地絡手段１５Ａの２つの半導体スイッチ素子Ｓ１，Ｓ２がＯＮし、かつ第２の地絡手段１５Ｂの２つの半導体スイッチ素子Ｓ１，Ｓ２がＯＦＦしているとき、入力端子１１から見た第２の９０度移相器１４Ｂのインピーダンスは通常のインピーダンス（例えば、５０［Ω］）のままで、入力端子１１から見た第１の９０度移相器１４Ａのインピーダンスは無限大なので、入力端子１１から入力される高周波電力は第２の出力端子１２Ｂのみから出力される。なお、半導体スイッチ素子Ｓ１，Ｓ２のＯＮ／ＯＦＦは、高周波電力の休止期間Ｔoff中に切り替えられることが好ましい。 As shown in FIG. 2, when the two semiconductor switch elements S1 and S2 of the first ground fault means 15A are OFF and the two semiconductor switch elements S1 and S2 of the second ground fault means 15B are ON. , The impedance of the first 90-degree phase shifter 14A seen from the input terminal 11 remains the normal impedance (for example, 50 [Ω]), and the impedance of the second 90-degree phase shifter 14B seen from the input terminal 11 remains. Since the impedance is infinite, the high frequency power input from the input terminal 11 is output only from the first output terminal 12A. On the contrary, when the two semiconductor switch elements S1 and S2 of the first ground fault means 15A are ON and the two semiconductor switch elements S1 and S2 of the second ground fault means 15B are OFF, the input terminal 11 The impedance of the second 90-degree phase shifter 14B seen from the above remains the normal impedance (for example, 50 [Ω]), and the impedance of the first 90-degree phase shifter 14A seen from the input terminal 11 is infinite. Therefore, the high frequency power input from the input terminal 11 is output only from the second output terminal 12B. It is preferable that the semiconductor switch elements S1 and S2 are turned on / off during the high frequency power pause period T off.

表２に示すように、半導体スイッチ素子は、大電力の通電が可能で、応答性に優れ、かつ長寿命である。このため、半導体スイッチ素子により電気経路を切り替えることとした本実施例によれば、真空リレーを用いた場合に得られる利点とＰＩＮダイオードを用いた場合に得られる利点とを併せ持った電気経路切替器を実現することができる。

Figure 0006966110
As shown in Table 2, the semiconductor switch element can be energized with a large amount of electric power, has excellent responsiveness, and has a long life. Therefore, according to this embodiment in which the electric path is switched by the semiconductor switch element, the electric path switcher has both the advantages obtained when the vacuum relay is used and the advantages obtained when the PIN diode is used. Can be realized.
Figure 0006966110

［変形例］
以上、本発明の実施例について説明してきたが、本発明の構成はこれに限定されるものではない。 [Modification example]
Although the examples of the present invention have been described above, the configuration of the present invention is not limited to this.

例えば、９０度移相器１４Ａ，１４Ｂは、電気経路１３Ａ，１３Ｂに介装された第３のコンデンサＣ３と、第３のコンデンサＣ３の一端とＧＮＤとの間に設けられた第２のインダクタＬ２と、第３のコンデンサＣ３の他端とＧＮＤとの間に設けられた第３のインダクタＬ３とからなるπ型のフィルタ回路を含んでいてもよいし（図３（Ａ）参照）、入力される高周波電力の波長の１／４の長さを有する同軸ケーブルＣＣであってもよい（図３（Ｂ）参照）。ただし、いずれの構成を採用する場合においても、９０度移相器１４Ａ，１４Ｂは、地絡手段１５Ａ，１５Ｂが電気経路１３Ａ，１３Ｂ（出力端子１２Ａ，１２Ｂ）を地絡させたときに、入力端子１１から見たインピーダンスが周波数ｆｉｎにおいてＨｉｇｈインピーダンス（例えば、通常の１０倍以上、好ましくは１００倍以上のインピーダンス）になる必要がある。 For example, the 90-degree phase shifters 14A and 14B have a third capacitor C3 interposed in the electric paths 13A and 13B, and a second inductor L2 provided between one end of the third capacitor C3 and GND. A π-type filter circuit including the other end of the third capacitor C3 and the third inductor L3 provided between the GND may be included (see FIG. 3A), and the input is input. It may be a coaxial cable CC having a length of 1/4 of the wavelength of the high frequency power (see FIG. 3B). However, regardless of which configuration is adopted, the 90-degree phase shifters 14A and 14B are input when the ground fault means 15A and 15B ground fault the electric paths 13A and 13B (output terminals 12A and 12B). High impedance impedance viewed from the terminal 11 at a frequency f in (e.g., normal 10 times or more, preferably at least 100 times the impedance) the need for.

また、地絡手段１５Ａ，１５Ｂは、電気経路１３Ａ，１３Ｂにアノードが接続された第３のダイオードＤ３と、電気経路１３Ａ，１３Ｂにカソードが接続された第４のダイオードＤ４と、コレクタが第３のダイオードＤ３のカソードに接続されるとともにエミッタがＧＮＤに接続されたＮＰＮ型のトランジスタからなる第３の半導体スイッチ素子Ｓ３と、コレクタが第４のダイオードＤ４のアノードに接続されるとともにエミッタがＧＮＤに接続されたＰＮＰ型のトランジスタからなる第４の半導体スイッチ素子Ｓ４とを含んでいてもよい（図４（Ａ）参照）。あるいは、地絡手段１５Ａ，１５Ｂは、一方の端子が電気経路１３Ａ，１３Ｂに接続されるとともに他方の端子がＧＮＤに接続されたトライアックからなる第５の半導体スイッチ素子Ｓ５を含んでいてもよい（同図（Ｂ）参照）。あるいは、地絡手段１５Ａ，１５Ｂは、カソードが電気経路１３Ａ，１３Ｂに接続されるとともにアノードがＧＮＤに接続されたサイリスタからなる第６の半導体スイッチ素子Ｓ６と、アノードが電気経路１３Ａ，１３Ｂに接続されるとともにカソードがＧＮＤに接続されたサイリスタからなる第７の半導体スイッチ素子Ｓ７とを含んでいてもよい（同図（Ｃ）参照）。いずれの構成を採用する場合においても、外部からの制御信号により半導体スイッチ素子Ｓ３，Ｓ４，Ｓ５，Ｓ６，Ｓ７をＯＮさせることにより、地絡状態を作り出すことができる。 Further, in the ground fault means 15A and 15B, the third diode D3 in which the anode is connected to the electric paths 13A and 13B, the fourth diode D4 in which the cathode is connected to the electric paths 13A and 13B, and the collector are the third. A third semiconductor switch element S3 consisting of an NPN-type transistor connected to the cathode of the diode D3 and the emitter connected to the GND, and a collector connected to the anode of the fourth diode D4 and the emitter connected to the GND. A fourth semiconductor switch element S4 composed of a connected PNP type transistor may be included (see FIG. 4A). Alternatively, the ground fault means 15A, 15B may include a fifth semiconductor switch element S5 consisting of a triac in which one terminal is connected to the electrical paths 13A, 13B and the other terminal is connected to the GND (. (B) in the figure). Alternatively, in the ground fault means 15A and 15B, the cathode is connected to the electric paths 13A and 13B and the anode is connected to the sixth semiconductor switch element S6 composed of a thyristor connected to the GND and the anode is connected to the electric paths 13A and 13B. It may also include a seventh semiconductor switch element S7 consisting of a thyristor whose cathode is connected to the GND (see FIG. 3C). Regardless of which configuration is adopted, a ground fault state can be created by turning on the semiconductor switch elements S3, S4, S5, S6, and S7 by a control signal from the outside.

また、本発明に係る電気経路切替器は、図５に示す電気経路切替器１０’のように、３つ以上の出力端子１２Ａ，１２Ｂ，１２Ｃ・・・と、３つ以上の電気経路１３Ａ，１３Ｂ，１３Ｃ・・・と、３つ以上の９０度移相器１４Ａ，１４Ｂ，１４Ｃ・・・と、３つ以上の地絡手段１５Ａ，１５Ｂ，１５Ｃ・・・とを備えていてもよい。この構成によれば、高周波電源装置２０が出力する高周波電力を３つ以上の負荷装置３０Ａ，３０Ｂ，３０Ｃ・・・のいずれかに選択的に供給することができる。なお、９０度移相器１４Ｃ・・・は、９０度移相器１４Ａ，１４Ｂと同一の構成とすることができる。同様に、地絡手段１５Ｃ・・・は、地絡手段１５Ａ，１５Ｂと同一の構成とすることができる。 Further, the electric circuit switch according to the present invention has three or more output terminals 12A, 12B, 12C ... And three or more electric paths 13A, like the electric path switch 10'shown in FIG. 13B, 13C ..., Three or more 90-degree phase shifters 14A, 14B, 14C ..., And three or more ground fault means 15A, 15B, 15C ... May be provided. According to this configuration, the high-frequency power output by the high-frequency power supply device 20 can be selectively supplied to any of three or more load devices 30A, 30B, 30C, .... The 90-degree phase shifter 14C ... Can have the same configuration as the 90-degree phase shifter 14A, 14B. Similarly, the ground fault means 15C ... Can have the same configuration as the ground fault means 15A and 15B.

また、本発明に係る電気経路切替器の入力端子１１には、高周波とは言えないような周波数の交流電力が入力されてもよい。 Further, AC power having a frequency that cannot be said to be high frequency may be input to the input terminal 11 of the electric path switch according to the present invention.

１０，１０’ 電気経路切替器
１１ 入力端子
１２Ａ，１２Ｂ，１２Ｃ 出力端子
１３Ａ，１３Ｂ，１３Ｃ 電気経路
１４Ａ，１４Ｂ，１４Ｃ ９０度移相器
１５Ａ，１５Ｂ，１５Ｃ 地絡手段
２０ 高周波電源装置
３０Ａ，３０Ｂ，３０Ｃ 負荷装置 10,10'Electrical path switch 11 Input terminal 12A, 12B, 12C Output terminal 13A, 13B, 13C Electrical path 14A, 14B, 14C 90 degree phase shifter 15A, 15B, 15C Ground fault means 20 High frequency power supply device 30A, 30B , 30C load device

Claims (7)

入力端子と複数の出力端子とを備え、前記入力端子から入力される所定周波数の交流電力を前記複数の出力端子のいずれかから出力する電気経路切替器であって、
前記入力端子を前記複数の出力端子のそれぞれに接続する複数の電気経路と、
前記電気経路のそれぞれに設けられた、接地電位を基準として動作する９０度移相器と、
前記９０度移相器と前記出力端子との間において、前記電気経路のそれぞれに設けられた地絡手段と
をさらに備え、
前記地絡手段は、前記電気経路と前記接地電位との間に設けられた少なくとも１つの半導体スイッチ素子を含み、
前記交流電力を出力すべきではない出力端子のための前記電気経路の前記地絡手段が当該出力端子を地絡させると、当該電気経路の前記９０度移相器の前記入力端子から見た前記所定周波数におけるインピーダンスが地絡させていないときの１０倍以上になる
ことを特徴とする電気経路切替器。 An electric path switch having an input terminal and a plurality of output terminals, and outputting AC power of a predetermined frequency input from the input terminal from any of the plurality of output terminals.
A plurality of electric circuits connecting the input terminal to each of the plurality of output terminals,
A 90-degree phase shifter that operates with reference to the ground potential provided in each of the electric paths, and
Between the 90-degree phase shifter and the output terminal, ground fault means provided in each of the electric paths is further provided.
The ground fault means includes at least one semiconductor switch element provided between the electrical path and the ground potential.
When the ground fault means of the electrical path for the output terminal to which the alternating current should not output the power to ground the output terminal, wherein when viewed from the input terminal of said 90-degree phase shifter of the electrical path An electric circuit switch characterized in that the impedance at a predetermined frequency is 10 times or more that when no ground fault is caused. 前記９０度移相器は、π型のフィルタ回路を含んでいる
ことを特徴とする請求項１に記載の電気経路切替器。 The electric path switch according to claim 1, wherein the 90-degree phase shifter includes a π-type filter circuit. 前記９０度移相器は、前記交流電力の波長の１／４の長さの同軸ケーブルを含んでいる
ことを特徴とする請求項１に記載の電気経路切替器。 The electric path switch according to claim 1, wherein the 90-degree phase shifter includes a coaxial cable having a length of 1/4 of the wavelength of the AC power. 前記地絡手段は、
前記電気経路にアノードが接続された第１ダイオードと、
前記電気経路にカソードが接続された第２ダイオードと、
ドレインが前記第１ダイオードのカソードに接続されるとともにソースが前記接地電位に接続されたＮチャネル型のＭＯＳＦＥＴと、
ドレインが前記第２ダイオードのアノードに接続されるとともにソースが前記接地電位に接続されたＰチャネル型のＭＯＳＦＥＴと
を含んでいる
ことを特徴とする請求項１〜３のいずれか一項に記載の電気経路切替器。 The ground fault means
A first diode with an anode connected to the electrical path,
A second diode with a cathode connected to the electrical path,
An N-channel MOSFET in which the drain is connected to the cathode of the first diode and the source is connected to the ground potential.
The invention according to any one of claims 1 to 3, wherein the drain is connected to the anode of the second diode and the source includes a P-channel MOSFET connected to the ground potential. Electrical path switcher. 前記地絡手段は、
前記電気経路にアノードが接続された第１ダイオードと、
前記電気経路にカソードが接続された第２ダイオードと、
コレクタが前記第１ダイオードのカソードに接続されるとともにエミッタが前記接地電位に接続されたＮＰＮ型のトランジスタと、
コレクタが前記第２ダイオードのアノードに接続されるとともにエミッタが前記接地電位に接続されたＰＮＰ型のトランジスタと
を含んでいる
ことを特徴とする請求項１〜３のいずれか一項に記載の電気経路切替器。 The ground fault means
A first diode with an anode connected to the electrical path,
A second diode with a cathode connected to the electrical path,
An NPN-type transistor in which the collector is connected to the cathode of the first diode and the emitter is connected to the ground potential.
The electricity according to any one of claims 1 to 3, wherein the collector is connected to the anode of the second diode and the emitter includes a PNP type transistor connected to the ground potential. Route switcher. 前記地絡手段は、
カソードが前記電気経路に接続されるとともにアノードが前記接地電位に接続された第１サイリスタと、
アノードが前記電気経路に接続されるとともにカソードが前記接地電位に接続された第２サイリスタと
を含んでいる、
ことを特徴とする請求項１〜３のいずれか一項に記載の電気経路切替器。 The ground fault means
A first thyristor with a cathode connected to the electrical path and an anode connected to the ground potential,
Includes a second thyristor with an anode connected to the electrical path and a cathode connected to the ground potential.
The electric circuit switch according to any one of claims 1 to 3. 前記地絡手段は、
一方の端子が前記電気経路に接続されるとともに他方の端子が前記接地電位に接続されたトライアックを含んでいる、
ことを特徴とする請求項１〜３のいずれか一項に記載の電気経路切替器。 The ground fault means
Containing a triac in which one terminal is connected to the electrical path and the other terminal is connected to the ground potential.
The electric circuit switch according to any one of claims 1 to 3.
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