JP6944477B2 - Magnetic storage device - Google Patents

Description

Embodiments of the present invention relate to magnetic storage devices.

Stable operation is desired in a magnetic storage device.

Japanese Unexamined Patent Publication No. 2018-22545

An embodiment of the present invention provides a magnetic storage device that can obtain stable operation.

According to an embodiment of the present invention, the magnetic storage device includes a conductive member, a first magnetic layer, a first opposed magnetic layer, a first intermediate magnetic layer, a first conductive layer and a first non-magnetic layer. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first opposed magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate magnetic layer is provided between the first opposed magnetic layer and the first magnetic layer. The first conductive layer is provided between the first opposed magnetic layer and the first intermediate magnetic layer. The first non-magnetic layer is provided between the first intermediate magnetic layer and the first magnetic layer. The first conductive layer contains at least one selected from the group consisting of a first material, a second material, a third material and a fourth material. The first material comprises at least one selected from the group consisting of W, Mo, Zr, Nb and V. The second material contains a metal nitride. The third material contains a metal oxide. The fourth material comprises at least one selected from the group consisting of Ru, Ir and Cr. At least a part of the fourth material is amorphous.

FIG. 1 is a schematic diagram illustrating a magnetic storage device according to the first embodiment. FIG. 2 is a schematic view illustrating the magnetic storage device according to the first embodiment. 3A and 3B are schematic views illustrating the operation of the magnetic storage device according to the first embodiment. FIG. 4 is a schematic view illustrating the magnetic storage device according to the second embodiment. FIG. 5 is a schematic view illustrating the magnetic storage device according to the second embodiment. 6 (a) and 6 (b) are schematic views illustrating the magnetic storage device according to the third embodiment. FIG. 7 is a schematic diagram illustrating a circuit included in the magnetic storage device. FIG. 8 is a graph illustrating the characteristics of the magnetic storage device.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between the parts, etc. are not always the same as the actual ones. Even if the same part is represented, the dimensions and ratios of each may be represented differently depending on the drawing.
In the specification of the present application and each of the drawings, the same elements as those described above with respect to the above-described drawings are designated by the same reference numerals, and detailed description thereof will be omitted as appropriate.

(First Embodiment)
FIG. 1 is a schematic diagram illustrating a magnetic storage device according to the first embodiment.
As shown in FIG. 1, the magnetic storage device 110 according to the embodiment includes a conductive member 21, a first magnetic layer 11, a first opposed magnetic layer 11c, a first intermediate magnetic layer 11i, a first conductive layer 11e, and a first non-magnetic layer. Includes a magnetic layer 11n. For example, the first magnetic layer 11, the first intermediate magnetic layer 11i, and the first non-magnetic layer 11n are included in the first structure SB1. In this example, the first structure SB1 further includes a first opposed magnetic layer 11c and a first conductive layer 11e.

As will be described later, the electrical resistance of the first structure SB1 can be changed. The change in electrical resistance depends on, for example, the state of magnetization of the magnetic layer contained in the first structure SB1. At least a part of the first structure SB1 functions as, for example, an MTJ (Tunnel Magneto Resistance Effect) element. The first structure SB1 functions as, for example, one memory cell (memory element). As will be described later, a plurality of structures may be provided.

The conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b. The third portion 21c is continuous with the first portion 21a and the second portion 21b.

The first opposed magnetic layer 11c is provided between the third portion 21c and the first magnetic layer 11. The first intermediate magnetic layer 11i is provided between the first opposed magnetic layer 11c and the first magnetic layer 11. The first conductive layer 11e is provided between the first opposed magnetic layer 11c and the first intermediate magnetic layer 11i. The first non-magnetic layer 11n is provided between the first intermediate magnetic layer 11i and the first magnetic layer 11.

The first magnetic layer 11 and the first opposed magnetic layer 11c include, for example, a ferromagnet. The first intermediate magnetic layer 11i contains, for example, a soft magnetic material.

The first conductive layer 11e includes at least one selected from the group consisting of the first material, the second material, the third material, and the fourth material. The first material comprises, for example, at least one selected from the group consisting of W, Mo, Zr, Nb and V. The second material contains a metal nitride. The second material comprises, for example, TiN, ZrN, NbN, TaN, at least one selected from the group consisting of Cr ₂ N and VN. The third material contains a metal oxide. The third material may comprise, for example, ZnO, at least one selected from the group consisting of _In 2 _{O 3} and SnO _3. The fourth material comprises at least one selected from the group consisting of Ru, Ir and Cr. At least a part of the fourth material is amorphous.

At least a part of the first material may be amorphous. At least a part of the second material may be amorphous. At least a part of the third material may be amorphous.

The direction from the first opposed magnetic layer 11c to the first magnetic layer 11 is defined as the first direction D1. The first direction D1 is the Z-axis direction. The direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction. For example, the second direction D2 from the first portion 21a to the second portion 21b is, for example, along the X-axis direction.

In one example, the thickness te (see FIG. 1) of the first conductive layer 11e is 2 nm or more and 10 nm or less. The thickness te is a length along the first direction D1.

By providing such a first conductive layer 11e between the first opposed magnetic layer 11c and the first intermediate magnetic layer 11i, for example, the magnetic field leaked from the first opposed magnetic layer 11c is generated by the first intermediate magnetic layer. It becomes easier to act on 11i.

As shown in FIG. 1, the magnetic storage device 110 may further include a control unit 70. The control unit 70 is electrically connected to the first portion 21a and the second portion 21b. In this example, the control unit 70 is further electrically connected to the first magnetic layer 11. For example, the connection between the control unit 70 and the first portion 21a is performed by the wiring 71a. For example, the connection between the control unit 70 and the second portion 21a is made by the wiring 71b. For example, the control unit 70 and the first magnetic layer 11 are connected by the wiring 70a. A switch or the like may be provided in the middle of these wirings. For example, the switch sw21 is provided in the current path between the control circuit 75 provided in the control unit 70 and the first portion 21a. For example, the switch sw1 is provided in the current path between the control circuit 75 and the first magnetic layer 11. The switch may be provided in the current path between the control circuit 75 and the second portion 21b.

For example, the control unit 70 can perform the first operation and the second operation. In the first operation, the control unit 70 supplies the conductive member 21 with the first current from the first portion 21a to the second portion 21b. In the second operation, the control unit 70 supplies the conductive member 21 with a second current from the second portion 21b to the first portion 21a.

By these operations, for example, the electric resistance of the first structure SB1 changes. For example, in the first state after the first operation, the first electrical resistance of the first current path cp1 between the first portion 21a and the first magnetic layer 11 is the first current path after the second operation. It is different from the second electrical resistance of cp1.

This change in electrical resistance is considered to correspond to, for example, a change in the angle between the direction of magnetization of the first intermediate magnetic layer 11i and the direction of magnetization of the first magnetic layer 11. An example of such an operation will be described below.

In the first operation, when the first current flows through the conductive member 21, the magnetization of the first opposed magnetic layer 11c is oriented according to the direction of the first current. On the other hand, in the second operation, when the second current in the direction opposite to the direction of the first current flows through the conductive member 21, the magnetization of the first opposing magnetic layer 11c is changed to the direction corresponding to the direction of the second current. Become. In these operations, the magnetizations of the first opposed magnetic layer 11c are oriented in different directions. It is considered that the change in the direction of magnetization of the first opposed magnetic layer 11c according to the direction of the current is due to, for example, the SO (spin obit) effect.

In the embodiment, for example, the leakage magnetic field of the first opposed magnetic layer 11c acts on the first intermediate magnetic layer 11i. Due to the leakage magnetic field, the direction of magnetization of the first intermediate magnetic layer 11i changes according to the direction of magnetization of the first opposed magnetic layer 11c.

On the other hand, the direction of magnetization of the first magnetic layer 11 does not change substantially. Therefore, the angle between the magnetization direction of the first intermediate magnetic layer 11i and the magnetization direction of the first magnetic layer 11 changed by the first operation and the second operation changes. This causes the above-mentioned change in electrical resistance.

In the embodiment, a plurality of states having different electrical resistances correspond to a plurality of storage states.

In the embodiment, the first conductive layer 11e is provided between the first opposed magnetic layer 11c and the first intermediate magnetic layer 11i. In the first conductive layer 11e, the SO effect is substantially not generated. Alternatively, the sign of the spin Hall angle θSH in the first conductive layer 11e is opposite to the sign of the spin Hall angle θSH in the conductive member 21. Such a first conductive layer 11e suppresses the reduction of the SO effect.

When the first conductive layer 11e contains any of the first to fourth materials as described above, the reduction of the SO effect can be suppressed.

By such new magnetization control (writing operation), a stable storage state can be obtained. According to the embodiment, it is possible to provide a magnetic storage device that can obtain stable operation.

Spin Transfer Torque (STT) is suppressed in the laminated structure of the first opposed magnetic layer 11c, the first conductive layer 11e, and the first intermediate magnetic layer 11i. By using the first conductive layer 11e as described above, the STT via the first conductive layer 11e can be substantially ignored.

As will be described later, the storage state of the first structure SB1 may be detected by, for example, the Self-Reference Sensing Scheme. In this case, as described above, the STT in the laminated structure of the first opposed magnetic layer 11c, the first conductive layer 11e, and the first intermediate magnetic layer 11i does not substantially occur, so that the direction of magnetization of the first intermediate magnetic layer 11i Is easy to change. As a result, the sensitivity of detection by the self-reference method can be increased. The self-referencing method may include a non-destructive self-referencing method. An example of the self-referencing method will be described later.

In the embodiment, high sensitivity detection (reading operation) can be obtained. For example, the disturb that the read operation gives to the storage state can be suppressed. It becomes easier to obtain more stable operation.

For example, there is a reference example in which the first opposed magnetic layer 11c and the first intermediate magnetic layer 11i are magnetically coupled. In this reference example, Ru, Cu, or the like is provided as a layer provided between these magnetic layers 11. The thickness of this layer is then set to a thickness that provides good magnetic coupling (eg, a thickness corresponding to the peak of the RKKY (Ruderman-Kittel-Kasuya-Yosida) bond).

On the other hand, in the embodiment, the first opposed magnetic layer 11c and the first intermediate magnetic layer 11i are not substantially magnetically coupled. As a result, the magnetization of the first intermediate magnetic layer 11i is likely to change in the detection by the self-reference method described above. As a result, high sensitivity can be obtained.

For example, by setting the thickness te of the first conductive layer 11e to 2 nm or more and 10 nm or less, the leakage magnetic field acts effectively while suppressing the magnetic coupling.

In the embodiment, it is based on the idea of using a leaking magnetic field rather than the usual idea of using a magnetic coupling. This enables efficient writing. Efficient reading becomes possible.

In the embodiment, the magnetic volume of the first intermediate magnetic layer 11i is preferably smaller than the magnetic volume of the first opposed magnetic layer 11c. The magnetic volume of the first intermediate magnetic layer 11i is the product of the saturation magnetization of the first intermediate magnetic layer 11i and the volume of the first intermediate magnetic layer 11i. The magnetic volume of the first opposed magnetic layer 11c is the product of the saturation magnetization of the first opposed magnetic layer 11c and the volume of the first opposed magnetic layer 11c. As a result, the direction of magnetization of the first intermediate magnetic layer 11i is more likely to change than the direction of magnetization of the first opposed magnetic layer 11c. High sensitivity can be easily obtained.

For example, in the embodiment, in the formation of the first structure SB1, the first intermediate magnetic layer 11i and the first opposed magnetic layer 11c may be formed collectively. In this case, the sizes of these layers along the XY plane are substantially the same. Therefore, the difference in volume between these layers may substantially correspond to the difference in thickness.

For example, the thickness ti (see FIG. 1) of the first intermediate magnetic layer 11i along the first direction D1 (direction from the first opposed magnetic layer 11c to the first magnetic layer 11) is the first along the first direction D1. It is preferably thinner than the thickness tk (see FIG. 1) of the opposing magnetic layer 11c. High sensitivity can be easily obtained.

In one example, the thickness ti of the first intermediate magnetic layer 11i is, for example, 0.5 nm or more and 1.5 nm or less. In one example, the thickness tc of the first opposed magnetic layer 11c is, for example, 1.5 nm or more and 10 nm or less.

In the embodiment, the first intermediate magnetic layer 11i includes, for example, at least one selected from the group consisting of the following first magnetic material and second magnetic material. The first magnetic material has a bcc structure and comprises at least one selected from the group consisting of Fe, Co and Ni, and B. The second magnetic material includes a laminated film containing a first layer containing Ni and Fe and a second layer containing Fe, Co and B. When the first intermediate magnetic layer 11i contains such a material, for example, in the first intermediate magnetic layer 11i, it becomes easy to obtain appropriate controllability regarding the direction of magnetization.

In the magnetic storage device 110, the electrical resistivity of the first conductive layer 11e is preferably higher than the electrical resistivity of the conductive member 21. It is possible to suppress the current flowing through the conductive member 21 from being diverted to the first conductive layer 11e. As a result, the SO effect can be obtained more effectively.

In the embodiment, the first non-magnetic layer 11n contains, for example, MgO and the like. The thickness nt of the first non-magnetic layer 11n (see FIG. 1) is, for example, 0.8 nm or more and 4 nm or less.

In the embodiment, the first magnetic layer 11 includes, for example, at least one selected from the group consisting of Fe, Co and Ni.

In an embodiment, the conductive member 21 includes, for example, at least one selected from the group consisting of W, Ta, and Pt.

The above materials relating to the first non-magnetic layer 11n, the first magnetic layer 11 and the conductive member 21 are examples, and other materials may be used.

In embodiments, at least a portion of the fourth material is amorphous. At least a part of the first material may be amorphous. At least a part of the second material may be amorphous. At least a part of the third material may be amorphous. For example, at least a part of the first conductive layer 11e is amorphous. In this case, good crystallinity can be easily obtained in a layer close to the first conductive layer 11e (for example, the first non-magnetic layer 11, for example, the MgO layer). For example, it becomes easy to obtain good magnetic characteristics.

FIG. 2 is a schematic view illustrating the magnetic storage device according to the first embodiment.
As shown in FIG. 2, the magnetic storage device 111 according to the embodiment includes the second structure SB2 in addition to the conductive member 21 and the first structure SB1. In this example, a third structure SB3 is further provided. In this way, a plurality of structures (memory cells) may be provided on one conductive member 21. The number of a plurality of structures provided in one conductive member 21 is arbitrary. Hereinafter, the magnetic storage device 111 will be described as being different from the magnetic storage device 110.

The magnetic storage device 111 further includes a second magnetic layer 12, a second opposed magnetic layer 12c, a second intermediate magnetic layer 12i, a second conductive layer 12e, and a second non-magnetic layer 12n.

The conductive member 21 further includes a fourth portion 21d and a fifth portion 21e in addition to the first to third portions 21a to 21c. There is a third portion 21c between the first portion 21a and the fourth portion 21d. There is a second portion 21b between the third portion 21c and the fourth portion 21d. There is a fifth portion 21e between the second portion 21b and the fourth portion 21d. The conductive member 21 may include an end portion 21x. For example, the first portion 21a is one end and the other end is the end 21x. For example, the above portion is provided between the first portion 21a and the end portion 21x.

The second opposed magnetic layer 12c is provided between the fifth portion 21e and the second magnetic layer 12. The second intermediate magnetic layer 12i is provided between the second opposed magnetic layer 12c and the second magnetic layer 12. The second conductive layer 12e is provided between the second opposed magnetic layer 12c and the second intermediate magnetic layer 12i. The second non-magnetic layer 12n is provided between the second intermediate magnetic layer 12i and the second magnetic layer 12.

For example, the second magnetic layer 12, the second intermediate magnetic layer 12i, and the second non-magnetic layer 12n are included in the second structure SB2. In this example, the second structure SB2 further includes a second opposed magnetic layer 12c and a second conductive layer 12e. Since the configurations and materials in the plurality of layers included in the second structure SB2 are the same as those of the first structure SB1, the description thereof will be omitted.

The magnetic storage device 111 may further include a third magnetic layer 13, a third opposed magnetic layer 13c, a third intermediate magnetic layer 13i, a third conductive layer 13e, and a third non-magnetic layer 13n. For example, the third magnetic layer 13, the third intermediate magnetic layer 13i, and the third non-magnetic layer 13n are included in the third structure SB3. In this example, the third structure SB3 further includes a third opposed magnetic layer 13c and a third conductive layer 13e. Since the configurations and materials in the plurality of layers included in the third structure SB3 are the same as those of the first structure SB1, the description thereof will be omitted.

The control unit 70 is electrically connected to the first portion 21a by the wiring 71a. The control unit 70 is electrically connected to the fourth portion 21d (in this example, the end portion 21x) by the wiring 71b. The control unit 70 is electrically connected to the first magnetic layer 11 by the wiring 70a. The control unit 70 is electrically connected to the second magnetic layer 12 by the wiring 70b. For example, the switch sw2 is provided in the current path between the control circuit 75 and the second magnetic layer 12.

In the writing operation when a plurality of structures are provided on the conductive member 21, the selected state or the non-selected state can be controlled by the voltage applied to the plurality of structures. In the selected state, the electrical resistance of the structure changes depending on the current flowing through the conductive member 21. In the non-selected state, the electrical resistance of the structure does not substantially change due to the current flowing through the conductive member 21.

Control unit 70 For example, the following third and fourth operations can be performed.
In the third operation, the control unit 70 supplies the first current from the first portion 21a to the fourth portion 21d to the conductive member 21, and sets the potential of the first magnetic layer 11 as the first potential, and sets the second magnetic potential. The potential of the layer 12 is defined as this first potential. The first potential is, for example, a selective potential. The electric potential is, for example, an electric potential based on the electric potential of the conductive member 21.

In the fourth operation, the control unit 70 sets the potential of the first magnetic layer 11 as the first potential while supplying the second current from the fourth portion 21d to the first portion 21a to the conductive member 21, and sets the second magnetic layer. Let the potential of 12 be the second potential. The second potential is different from the first potential. The second potential is, for example, a non-selective potential.

For example, when the first potential of the selective potential is applied, the magnetization of the opposing magnetic layer and the magnetization of the intermediate magnetic layer change according to the direction of the current flowing through the conductive member 21.

For example, when the second potential of the non-selective potential is applied, the magnetization of the opposing magnetic layer and the magnetization of the intermediate magnetic layer change according to the direction of the current flowing through the conductive member 21.

For example, in the third operation, the same magnetization state (same electrical resistance state) can be obtained in the first structure SB1 and the second structure SB2. On the other hand, in the fourth operation, the information is rewritten in the first structure SB1 and the information is not rewritten in the second structure SB2.

Therefore, in the first state after the third operation, the first electrical resistance of the first current path cp1 (see FIG. 2) between the first portion 21a and the first magnetic layer 11 and the first portion 21a and the first. The second electrical resistance of the second current path cp2 (see FIG. 2) between the two magnetic layers 12 is substantially the same. For example, both the first electric resistance and the second electric resistance at this time are high resistance (magnetization is "antiparallel"). Alternatively, both the first and second electrical resistances are low resistance (magnetization is "parallel").

On the other hand, the fourth operation is performed after the first state, and in the second state thereafter, the third electric resistance of the first current path cp1 is different from the fourth electric resistance of the second current path cp2. The third electric resistance is the electric resistance after being rewritten. On the other hand, the fourth electrical resistance is not rewritten and is substantially the same as the electrical resistance before the fourth operation.

As described above, the absolute value of the difference between the first electric resistance and the second electric resistance is smaller than the absolute value of the difference between the third electric resistance and the fourth electric resistance.

Such selected state or non-selected state control is possible. Such control can be obtained, for example, by the following operations.

3A and 3B are schematic views illustrating the operation of the magnetic storage device according to the first embodiment.
FIG. 3A corresponds to a state in which the second voltage (non-selective voltage) is applied to the first magnetic layer 11. FIG. 3B corresponds to a state in which the above-mentioned first voltage (selective voltage) is applied to the first magnetic layer 11.

As shown in FIG. 3 (b), STT operates when a selective voltage is applied. As a result, fluctuations in the magnetization 11im of the first intermediate magnetic layer 11i are suppressed. A magnetic action occurs between the first intermediate magnetic layer 11i and the first opposed magnetic layer 11c in this state. As a result, the magnetization of the first intermediate magnetic layer 11i is likely to be reversed. As a result, selective writing (reversal of magnetization) can be performed.

As shown in FIG. 3A, STT does not act when a non-selective voltage is applied. In this case, the fluctuation of the magnetization 11im of the first intermediate magnetic layer 11i is relatively large as compared with the case of FIG. 3B. Therefore, oscillation is suppressed by the magnetic action between the first intermediate magnetic layer 11i and the first opposed magnetic layer 11c. Therefore, in this state, the change in magnetization is suppressed. As a result, a non-selected state is obtained.

Due to such an action, the above-mentioned difference in electrical resistance (difference between the absolute value of the difference between the first electric resistance and the second electric resistance and the absolute value of the difference between the third electric resistance and the fourth electric resistance). Occurs.

(Second Embodiment)
Hereinafter, the second embodiment will be described with respect to parts different from the first embodiment.

FIG. 4 is a schematic view illustrating the magnetic storage device according to the second embodiment.
As shown in FIG. 4, the magnetic storage device 120 according to the embodiment includes a conductive member 21, a first magnetic layer 11, a first opposed magnetic layer 11c, a first intermediate magnetic layer 11i, and a first non-magnetic layer 11n. For example, the first magnetic layer 11, the first intermediate magnetic layer 11i, and the first non-magnetic layer 11n are included in the first structure SB1.

Between the first magnetic layer 11c and the first magnetic layer 11, there is a third portion 21c of the conductive member 21. The first intermediate magnetic layer 11i is provided between the third portion 21c and the first magnetic layer 11. The first non-magnetic layer 11n is provided between the first intermediate magnetic layer 11i and the first magnetic layer 11.

In the magnetic storage device 120, for example, the magnetization of the first opposed magnetic layer 11c is controlled by the current flowing through the conductive member 21. For example, the magnetization of the first intermediate magnetic layer 11i is controlled by the leakage magnetic field from the first opposed magnetic layer 11c.

In the magnetic storage device 120, for example, the magnetization of the first opposed magnetic layer 11c based on the current flowing through the conductive member 21 is magnetic in the structures of the first intermediate magnetic layer 11i, the first non-magnetic layer 11n, and the first magnetic layer 11. It becomes easy to control independently of the characteristics. For example, STT is suppressed. For example, a stable storage state can be obtained by controlling stable magnetization (writing operation). It is possible to provide a magnetic storage device that can obtain stable operation.

In the magnetic storage device 120, for example, STT can be suppressed. For example, high sensitivity can be obtained in detection (reading) by a self-reference method or the like. For example, high-sensitivity detection (reading operation) can be obtained. The disturb that the read operation gives to the storage state can be suppressed. It becomes easier to obtain more stable operation.

For example, the thickness t21 of the conductive member 21 along the first direction D1 from the first opposed magnetic layer 11c to the first magnetic layer 11 is preferably 1 nm or more and 15 nm or less. As a result, the leakage magnetic field from the first opposed magnetic layer 11c is effectively applied to the first intermediate magnetic layer 11i. For example, high writing efficiency can be easily obtained.

In the magnetic storage device 120, the magnetic volume of the first intermediate magnetic layer 11i is preferably smaller than the magnetic volume of the first opposed magnetic layer 11c. As a result, the direction of magnetization of the first intermediate magnetic layer 11i is more likely to change than the direction of magnetization of the first opposed magnetic layer 11c. High sensitivity can be easily obtained.

For example, the thickness ti of the first intermediate magnetic layer 11i along the first direction D1 is preferably thinner than the thickness tc of the first opposing magnetic layer 11c along the first direction D1. High sensitivity can be easily obtained.

In the magnetic storage device 120 as well, the control unit 70 is electrically connected to, for example, the first portion 21a and the second portion 21b. In this case as well, the control unit 70 can perform the first operation and the second operation. In the first operation, the control unit 70 supplies the conductive member 21 with the first current from the first portion 21a to the second portion 21b. In the second operation, the control unit 70 supplies the conductive member 21 with a second current from the second portion 21b to the first portion 21a. In the first state after the first operation, the first electrical resistance of the first current path cp1 between the first portion 21a and the first magnetic layer 11 is the first electrical resistance of the first current path cp1 after the second operation. It is different from the second electrical resistance.

FIG. 5 is a schematic view illustrating the magnetic storage device according to the second embodiment.
As shown in FIG. 5, the second structure SB2 and the third structure SB3 may be further included as in the magnetic storage device 121 according to the embodiment. Hereinafter, the second structure SB2 in the magnetic storage device 121 will be described.

The magnetic storage device 121 includes a second magnetic layer 12, a second opposed magnetic layer 12c, a second intermediate magnetic layer 12i, and a second non-magnetic layer 12n. On the other hand, the conductive member 21 includes the first to fifth portions 21a to 21e. The fifth portion 21e is between the second opposed magnetic layer 12c and the second magnetic layer 11. The second intermediate magnetic layer 12i is provided between the fifth portion 21e and the second magnetic layer 12. The second non-magnetic layer 12n is provided between the second intermediate magnetic layer 12i and the second magnetic layer 12.

Also in the magnetic storage device 121, a selected state and a non-selected state can be obtained. For example, the control unit 70 is electrically connected to the first portion 21a, the fourth portion 21d (in this example, the end portion 21x), the first magnetic layer 11, and the second magnetic layer 12.

The control unit can perform the third operation and the fourth operation. In the third operation, the control unit 70 sets the potential of the first magnetic layer 11 as the first potential while supplying the first current from the first portion 21a to the fourth portion 21d to the conductive member 21, and sets the second magnetic layer. Let the potential of 12 be the first potential. In the fourth operation, the control unit 70 sets the potential of the first magnetic layer 11 as the first potential while supplying the second current from the fourth portion 21d to the first portion 21a to the conductive member 21, and sets the second magnetic layer. Let the potential of 12 be a second potential different from the first potential.

Also in the magnetic storage device 121, the first electric resistance of the first current path cp1 between the first portion 21a and the first magnetic layer 11 in the first state after the third operation, and the first portion 21a and the first The absolute value of the difference between the second electrical resistance of the second current path cp2 and the second magnetic layer 12 is that of the first current path cp1 in the second state after the fourth operation after the first state. It is smaller than the absolute value of the difference between the third electric resistance and the fourth electric resistance of the second current path cp2. For example, in the third operation, the first structure SB1 and the second structure SB2 are in the selected state. For example, in the fourth operation, the first structure SB1 is in the selected state, and the second structure SB2 is in the non-selected state.

(Third Embodiment)
Hereinafter, the parts of the third embodiment that are different from those of the first embodiment will be described.

6 (a) and 6 (b) are schematic views illustrating the magnetic storage device according to the third embodiment.
FIG. 6A is a plan view. FIG. 6B is a cross-sectional view taken along the line A1-A2 of FIG. 6A.

As shown in FIGS. 6 (a) and 6 (b), the magnetic storage device 130 according to the embodiment includes a conductive member 21, a first magnetic layer 11, a first opposed magnetic layer 11c, and a first intermediate magnetic layer 11i. The first conductive layer 11e and the first non-magnetic layer 11n are included. Also in this case, the conductive member 21, the first magnetic layer 11, the first opposed magnetic layer 11c, the first intermediate magnetic layer 11i, the first conductive layer 11e, and the first non-magnetic layer 11n are the first structure SB1 (memory cell). )include.

In this case as well, the conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c between the first portion 21a and the second portion 21b. The first opposed magnetic layer 11c faces the third portion 21c. The direction from the first portion 21a to the second portion 21b is defined as the second direction D2.

As shown in FIG. 6B, the first direction D1 from the first intermediate magnetic layer 11i to the first magnetic layer 11 intersects the second direction D2 (X-axis direction). The third direction D3 from the first opposed magnetic layer 11c to the first intermediate magnetic layer intersects the plane including the first direction D1 and the second direction D2.

The first direction D1 is, for example, the Z-axis direction. The second direction D2 is, for example, the X-axis direction. The third direction D3 is, for example, the Y-axis direction.

The first conductive layer 11e is provided between the first opposed magnetic layer 11c and the first intermediate magnetic layer 11i. The first non-magnetic layer 11n is provided between the first intermediate magnetic layer 11i and the first magnetic layer 11.

In the magnetic storage device 130, the materials of the conductive member 21, the first magnetic layer 11, the first opposed magnetic layer 11c, the first intermediate magnetic layer 11i, the first conductive layer 11e, and the first non-magnetic layer 11n are magnetically stored. The description of the device 110 is applicable. For example, a control unit 70 (see FIG. 1) that is electrically connected to the first portion 21a, the second portion 21b, and the first magnetic layer 11 may be provided.

For example, the first conductive layer 11e includes at least one selected from the group consisting of the first material, the second material, the third material, and the fourth material. The first material comprises, for example, at least one selected from the group consisting of W, Mo, Zr, Nb and V. The second material contains a metal nitride. The second material comprises, for example, TiN, ZrN, NbN, TaN, at least one selected from the group consisting of Cr ₂ N and VN. The third material contains a metal oxide. The third material may comprise, for example, ZnO, at least one selected from the group consisting of _In 2 _{O 3} and SnO _3. The fourth material comprises at least one selected from the group consisting of Ru, Ir and Cr. At least a part of the fourth material is amorphous.

Also in this example, for example, the magnetic field leaked from the first opposed magnetic layer 11c can act on the first intermediate magnetic layer 11i.

For example, the thickness te of the first conductive layer 11e along the third direction D3 is, for example, 2 nm or more and 10 nm or less. With such a thickness, the action of the leaked magnetic field can be obtained more effectively.

Even in the magnetic storage device 130, more stable operation can be obtained.

A plurality of structures having the same structure as the first structure SB1 may be provided. Each of the multiple structures functions as a memory cell.

Hereinafter, an example of the read operation by the self-reference method will be described.
FIG. 7 is a schematic diagram illustrating a circuit included in the magnetic storage device.
FIG. 7 illustrates the first detection circuit 77A. The first detection circuit 77A is, for example, a read-out circuit. The first detection circuit 77A may be included in the control unit 70, for example. As shown in FIG. 7, one end of the first structure SB1 is connected to the wiring 70a. The wiring 70a is, for example, a bit wire. The other end of the first structure SB1 is connected to the conductive member 21. The conductive member 21 is connected to the switch sw21.

The wiring 70a (for example, a bit wire) is connected to one end of the first selection switch 76a and one end of the second selection switch 76b. These select switches are connected in parallel. The other end of the first selection switch 76a is connected to the first input of the amplifier 76A. A capacitor 76c is provided at a connection point between the other end of the first selection switch 76a and the first input of the amplifier 76A. On the other hand, the other end of the second selection switch 76b is connected to one end of the resistance element 76d. The other end of the resistance element 76d is connected to the second input of the amplifier 76A. The amplifier 76A outputs an output signal 76o according to the difference between the first input and the second input. A precharge circuit 76P is connected to the wiring 70a.

For example, the first detection circuit 77A applies a bias voltage to the first structure SB1 to obtain a signal corresponding to the electrical resistance of the current path including the first structure SB1 at that time. The first detection circuit 77A changes the bias voltage to obtain a signal corresponding to the electrical resistance at different bias voltages. For example, in the first structure SB1, the bias voltage dependence of the electrical resistance differs between the low resistance state (magnetization is “parallel” state) and the high resistance state (magnetization is “antiparallel” state). The storage state can be detected by utilizing this characteristic.

FIG. 8 is a graph illustrating the characteristics of the magnetic storage device.
The horizontal axis of FIG. 8 corresponds to the bias voltage Vb1 applied to the first structure SB1 in the read operation. The vertical axis corresponds to the electric resistance R1 of the first structure SB1. FIG. 8 illustrates the characteristics of the magnetic storage device (for example, the magnetic storage device 110) according to the embodiment. As described above, in the magnetic storage device 110, the first opposed magnetic layer 11c, the first conductive layer 11e, and the first intermediate magnetic layer 11i are provided. The first intermediate magnetic layer 11i is affected by the leakage magnetic field from the first opposed magnetic layer 11c. The first intermediate magnetic layer 11i is greatly affected by the spin torque. The first conductive layer 11e suppresses STT. Therefore, the magnetization of the first intermediate magnetic layer 11i is easily changed. The first intermediate magnetic layer 11i has, for example, a small retention and functions as a “light sensitive layer”.

FIG. 8 illustrates the characteristics of the magnetic storage device 119 of the reference example. In the magnetic storage device 119, the first conductive layer 11e and the first intermediate magnetic layer 11i are not provided. In the magnetic storage device 119, the influence of the spin torque has a large effect on the first opposed magnetic layer 11c. The first intermediate magnetic layer 11i functions as, for example, a “memory layer” having a large retention.

As shown in FIG. 8, in the magnetic storage device 110, the electric resistance R1 changes significantly with respect to the change in the bias voltage Vb1 as compared with the magnetic storage device 119. High sensitivity can be obtained.

Also in the magnetic storage device 130, high sensitivity can be obtained by the first conductive layer 11e and the first intermediate magnetic layer 11i. In the magnetic storage device 120, since the conductive member 21 is provided between the first opposed magnetic layer 11c and the first intermediate magnetic layer 11i, the first intermediate magnetic layer 11i functions as a “light sensitive layer”. As a result, high sensitivity can be obtained.

The magnetic storage device according to the embodiment may further include a first detection circuit 77A (see FIG. 7). Alternatively, the control unit 70 may further include a first detection circuit 77A.

The first detection circuit 77A is electrically connected to the first magnetic layer 11 via, for example, the wiring 70a. The first storage element ME1 (see FIG. 7) including the first intermediate magnetic layer 11i, the first non-magnetic layer 11n, and the first magnetic layer 11 has a first storage state and a second storage state.

The first change in the electrical resistance of the first storage element ME1 in the first storage state with respect to the change in the voltage applied to the first storage element ME1 (for example, the bias voltage Vb1) is applied to the first storage element ME1. It is different from the second change of the electric resistance of the first storage element ME1 in the second storage state with respect to the change of the voltage. The first detection circuit 77A detects the difference between the first change and the second change.

For example, in the first detection circuit 77A, the current flowing through the first magnetic layer 11 when the first voltage VE1 is applied to the first magnetic layer 11 and the second voltage different from the first voltage VE1 are applied to the first magnetic layer 11. The difference between the current flowing through the first magnetic layer 11 when VE2 is applied and the current can be detected (see FIG. 8). Based on this difference, the first detection circuit 77A can read out the storage state of the storage element ME1 including the first intermediate magnetic layer 11i, the first non-magnetic layer 11n, and the first magnetic layer 11.

By applying the first intermediate magnetic layer 11i to a read operation using such a first detection circuit 77A, high-sensitivity detection (read) becomes easy. Stable read operation can be obtained.

The embodiments include, for example, the following configurations (eg, technical proposals).
(Structure 1)
A conductive member including a first portion, a second portion, and a third portion between the first portion and the second portion.
The first magnetic layer and
A first opposed magnetic layer provided between the third portion and the first magnetic layer,
A first intermediate magnetic layer provided between the first opposed magnetic layer and the first magnetic layer,
A first conductive layer provided between the first opposed magnetic layer and the first intermediate magnetic layer,
A first non-magnetic layer provided between the first intermediate magnetic layer and the first magnetic layer,
With
The first conductive layer contains at least one selected from the group consisting of a first material, a second material, a third material and a fourth material.
The first material comprises at least one selected from the group consisting of W, Mo, Zr, Nb and V.
The second material contains a metal nitride and contains
The third material contains a metal oxide and contains
A magnetic storage device, wherein the fourth material comprises at least one selected from the group consisting of Ru, Ir and Cr, and at least a part of the fourth material is amorphous.

(Structure 2)
The magnetic storage device according to configuration 1, wherein the thickness of the first conductive layer along the first direction from the first opposed magnetic layer to the first magnetic layer is 2 nm or more and 10 nm or less.

(Structure 3)
The thickness of the first intermediate magnetic layer along the first direction from the first opposed magnetic layer to the first magnetic layer is thinner than the thickness of the first opposed magnetic layer along the first direction. The magnetic storage device described.

(Structure 4)
The magnetic storage device according to any one of configurations 1 to 3, wherein at least a part of the first material is amorphous.

(Structure 5)
The magnetic storage device according to any one of configurations 1 to 4, wherein the electrical resistivity of the first conductive layer is higher than the electrical resistivity of the conductive member.

(Structure 6)
A control unit electrically connected to the first portion and the second portion is further provided.
The control unit supplies the conductive member with a first operation of supplying a first current from the first portion to the second portion and a second current from the second portion to the first portion to the conductive member. It is possible to carry out the second operation of supplying,
In the first state after the first operation, the first electrical resistance of the first current path between the first portion and the first magnetic layer is the first current path after the second operation. The magnetic storage device according to any one of configurations 1 to 5, which is different from the second electrical resistance of the above.

(Structure 7)
The second magnetic layer and
The second opposed magnetic layer and
The second intermediate magnetic layer and
With the second conductive layer
The second non-magnetic layer and
With more
The conductive member further includes a fourth portion and a fifth portion, the third portion is located between the first portion and the fourth portion, and the third portion is located between the third portion and the fourth portion. There is a second part, and there is the fifth part between the second part and the fourth part.
The second opposed magnetic layer is provided between the fifth portion and the second magnetic layer.
The second intermediate magnetic layer is provided between the second opposed magnetic layer and the second magnetic layer.
The second conductive layer is provided between the second opposed magnetic layer and the second intermediate magnetic layer.
The magnetic storage device according to any one of configurations 1 to 5, wherein the second non-magnetic layer is provided between the second intermediate magnetic layer and the second magnetic layer.

(Structure 8)
A control unit electrically connected to the first portion, the fourth portion, the first conductive layer, and the second conductive layer is further provided.
The control unit
While supplying the first current from the first portion to the fourth portion to the conductive member, the potential of the first magnetic layer is set to the first potential, and the potential of the second magnetic layer is set to the first potential. Third operation and
While supplying a second current from the fourth portion to the first portion to the conductive member, the potential of the first magnetic layer is set as the first potential, and the potential of the second magnetic layer is set as the first potential. The fourth operation, which uses a second potential different from the potential,
Is feasible and
Between the first electrical resistance of the first current path between the first portion and the first magnetic layer and between the first portion and the second magnetic layer in the first state after the third operation. The absolute value of the difference between the second electric resistance of the second current path and the third electric resistance of the first current path in the second state after the fourth operation after the first state is The magnetic storage device according to the configuration 7, which is smaller than the absolute value of the difference between the fourth electric resistance of the second current path and the fourth electric resistance.

(Structure 9)
A conductive member including a first portion, a second portion, and a third portion between the first portion and the second portion.
The first magnetic layer and
The first opposed magnetic layer, which is the first opposed magnetic layer and has the third portion between the first opposed magnetic layer and the first magnetic layer.
A first intermediate magnetic layer provided between the third portion and the first magnetic layer,
A first non-magnetic layer provided between the first intermediate magnetic layer and the first magnetic layer,
Magnetic storage device equipped with.

(Structure 10)
9. The magnetic storage device according to configuration 9, wherein the thickness of the conductive member along the first direction from the first opposed magnetic layer to the first magnetic layer is 1 nm or more and 15 nm or less.

(Structure 11)
The thickness of the first intermediate magnetic layer along the first direction from the first opposed magnetic layer to the first magnetic layer is thinner than the thickness of the first opposed magnetic layer along the first direction. The magnetic storage device described.

(Structure 12)
A control unit electrically connected to the first portion and the second portion is further provided.
The control unit supplies the conductive member with a first operation of supplying a first current from the first portion to the second portion and a second current from the second portion to the first portion to the conductive member. It is possible to carry out the second operation of supplying,
In the first state after the first operation, the first electrical resistance of the first current path between the first portion and the first magnetic layer is the first current path after the second operation. The magnetic storage device according to any one of configurations 9 to 11, which is different from the second electrical resistance of the above.

(Structure 13)
The second magnetic layer and
The second opposed magnetic layer and
The second intermediate magnetic layer and
The second non-magnetic layer and
With more
The conductive member further includes a fourth portion and a fifth portion, the third portion is located between the first portion and the fourth portion, and the third portion is located between the third portion and the fourth portion. There is a second part, and there is the fifth part between the second part and the fourth part.
The fifth portion is between the second opposed magnetic layer and the second magnetic layer.
The second intermediate magnetic layer is provided between the fifth portion and the second magnetic layer.
The magnetic storage device according to any one of configurations 9 to 11, wherein the second non-magnetic layer is provided between the second intermediate magnetic layer and the second magnetic layer.

(Structure 14)
A control unit electrically connected to the first portion, the fourth portion, the first magnetic layer, and the second magnetic layer is further provided.
The control unit
While supplying the first current from the first portion to the fourth portion to the conductive member, the potential of the first magnetic layer is set to the first potential, and the potential of the second magnetic layer is set to the first potential. Third operation and
While supplying a second current from the fourth portion to the first portion to the conductive member, the potential of the first magnetic layer is set as the first potential, and the potential of the second magnetic layer is set as the first potential. The fourth operation, which uses a second potential different from the potential,
Is feasible and
Between the first electrical resistance of the first current path between the first portion and the first magnetic layer and between the first portion and the second magnetic layer in the first state after the third operation. The absolute value of the difference between the second electric resistance of the second current path and the third electric resistance of the first current path in the second state after the fourth operation after the first state is The magnetic storage device according to configuration 13, which is smaller than the absolute value of the difference between the fourth electrical resistance of the second current path and the fourth electric resistance.

(Structure 15)
A conductive member including a first portion, a second portion, and a third portion between the first portion and the second portion.
The first opposed magnetic layer facing the third portion and
The first magnetic layer and
In the first intermediate magnetic layer, the first direction from the first intermediate magnetic layer toward the first magnetic layer intersects the second direction from the first portion to the second portion and faces the first. The third direction from the magnetic layer to the first intermediate magnetic layer is the first intermediate magnetic layer that intersects the plane including the first direction and the second direction.
A first conductive layer provided between the first opposed magnetic layer and the first intermediate magnetic layer,
A first non-magnetic layer provided between the first intermediate magnetic layer and the first magnetic layer,
Magnetic storage device equipped with.

(Structure 16)
The first conductive layer includes at least one selected from the group consisting of a first material, a second material, a third material, and a fourth material.
The first material comprises at least one selected from the group consisting of W, Mo, Zr, Nb and V.
The second material contains a metal nitride and contains
The third material contains a metal oxide and contains
The magnetic storage device according to the configuration 15, wherein the fourth material contains at least one selected from the group consisting of Ru, Ir and Cr, and at least a part of the fourth material is amorphous.

(Structure 17)
The magnetic storage device according to the configuration 15 or 16, wherein the thickness of the first conductive layer along the third direction is 2 nm or more and 10 nm or less.

(Structure 18)
The magnetic storage device according to any one of configurations 1 to 17, wherein the magnetic volume of the first intermediate magnetic layer is smaller than the magnetic volume of the first opposed magnetic layer.

(Structure 19)
The first intermediate magnetic layer contains at least one selected from the group consisting of a first magnetic material and a second magnetic material.
The first magnetic material has a bcc structure and contains at least one selected from the group consisting of Fe, Co and Ni, and B.
The magnetic storage device according to any one of configurations 1 to 18, wherein the second magnetic material includes a first layer containing Ni and Fe and a second layer containing Fe, Co and B.

(Structure 20)
A first detection circuit electrically connected to the first magnetic layer is further provided.
The storage element including the first intermediate magnetic layer, the first non-magnetic layer, and the first magnetic layer has a first storage state and a second storage state.
The first change in the electrical resistance of the first storage element in the first storage state with respect to the change in the voltage applied to the first storage element is the change in the voltage applied to the first storage element. Unlike the second change in the electrical resistance of the first storage element in the second storage state.
The magnetic storage device according to any one of configurations 1 to 19, wherein the first detection circuit detects a difference between the first change and the second change.

(Structure 21)
A first detection circuit electrically connected to the first magnetic layer is further provided.
In the first detection circuit, when a current flowing through the first magnetic layer when a first voltage is applied to the first magnetic layer and a second voltage different from the first voltage are applied to the first magnetic layer. The storage state of the first storage element including the first intermediate magnetic layer, the first non-magnetic layer, and the first magnetic layer is read out based on the difference between the current flowing through the first magnetic layer and the current. The magnetic storage device according to any one of 19 to 19.

According to the embodiment, it is possible to provide a magnetic storage device that can obtain more stable operation.

In the present specification, the "electrically connected state" includes a state in which a plurality of conductors are physically in contact with each other and a current flows between the plurality of conductors. The "electrically connected state" includes a state in which another conductor is inserted between the plurality of conductors and a current flows between the plurality of conductors. The "electrically connected state" forms a state in which an electric element (such as a switch such as a transistor) is inserted between a plurality of conductors and a current flows between the plurality of conductors. Including possible states.

In the present specification, "vertical" and "parallel" include not only strict vertical and strict parallel, but also variations in the manufacturing process, for example, and may be substantially vertical and substantially parallel. ..

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific configuration of each element such as a conductive member, a magnetic layer, a non-magnetic layer, a conductive layer, and a control unit included in a magnetic storage device, the present invention can be obtained by appropriately selecting from a range known to those skilled in the art. It is included in the scope of the present invention as long as it can be carried out in the same manner and the same effect can be obtained.

Further, a combination of any two or more elements of each specific example to the extent technically possible is also included in the scope of the present invention as long as the gist of the present invention is included.

In addition, all magnetic storage devices that can be appropriately designed and implemented by those skilled in the art based on the magnetic storage device described above as an embodiment of the present invention are also within the scope of the present invention as long as the gist of the present invention is included. Belongs to.

In addition, within the scope of the idea of the present invention, those skilled in the art can come up with various modified examples and modified examples, and it is understood that these modified examples and modified examples also belong to the scope of the present invention. ..

Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.

11-13 ... 1st to 3rd magnetic layers, 11c to 13c ... 1st to 3rd opposed magnetic layers, 11e to 13e ... 1st to 3rd conductive layers, 11i to 13i ... 1st to 3rd intermediate magnetic layers, 11n to 13n ... 1st to 3rd non-magnetic layers, 21 ... Conductive members, 21a to 21e ... 1st to 5th parts, 21x ... Ends, 70 ... Control units, 70a, 70b, 71a, 71b ... Wiring, 75 ... control circuit, 76A ... amplifier, 76P ... precharge circuit, 76a, 76b ... first and second selection switches, 76c ... capacitor, 76d ... resistance element, 76o ... output signal, 77A ... first detection circuit, 110, 111, 119, 120, 121, 130 ... Magnetic storage device, D1 to D3 ... First to third directions, ME1 ... First storage element, R1 ... Electrical resistance, SB1 to SB3 ... First to third structures, VE1 , VE2 ... 1st, 2nd voltage, Vb1 ... Bias voltage, cp1, cp2 ... 1st, 2nd current path, sw1, sw2, sw21 ... Switch, t21, ct, te, ti, tun ... Thickness

Claims (5)

A conductive member including a first portion, a second portion, and a third portion between the first portion and the second portion.
The first opposed magnetic layer facing the third portion and
The first magnetic layer and
In the first intermediate magnetic layer, the first direction from the first intermediate magnetic layer toward the first magnetic layer intersects the second direction from the first portion to the second portion and faces the first. The third direction from the magnetic layer to the first intermediate magnetic layer is the first intermediate magnetic layer that intersects the plane including the first direction and the second direction.
A first conductive layer provided between the first opposed magnetic layer and the first intermediate magnetic layer,
A first non-magnetic layer provided between the first intermediate magnetic layer and the first magnetic layer,
Magnetic storage device equipped with. The magnetic volume of the first intermediate magnetic layer is smaller than the magnetic volume of the first opposing magnetic layer, the magnetic memory device according to claim 1 Symbol placement. The first intermediate magnetic layer contains at least one selected from the group consisting of a first magnetic material and a second magnetic material.
The first magnetic material has a bcc structure and contains at least one selected from the group consisting of Fe, Co and Ni, and B.
The magnetic storage device according to claim 1 or 2 , wherein the second magnetic material includes a first layer containing Ni and Fe and a second layer containing Fe, Co and B. A first detection circuit electrically connected to the first magnetic layer is further provided.
The first storage element including the first intermediate magnetic layer, the first non-magnetic layer, and the first magnetic layer has a first storage state and a second storage state.
The first change in the electrical resistance of the first storage element in the first storage state with respect to the change in the voltage applied to the first storage element is the change in the voltage applied to the first storage element. Unlike the second change in the electrical resistance of the first storage element in the second storage state.
The magnetic storage device according to any one of claims 1 to 3 , wherein the first detection circuit detects a difference between the first change and the second change. A first detection circuit electrically connected to the first magnetic layer is further provided.
In the first detection circuit, when a current flowing through the first magnetic layer when a first voltage is applied to the first magnetic layer and a second voltage different from the first voltage are applied to the first magnetic layer. The storage state of the first storage element including the first intermediate magnetic layer, the first non-magnetic layer and the first magnetic layer is read out based on the difference between the current flowing through the first magnetic layer and the current. The magnetic storage device according to any one of 1 to 4.

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