JP6928437B2 - Manufacturing method of sealed optical semiconductor device - Google Patents

Description

The present invention relates to a method for manufacturing a sealed optical semiconductor device.

Conventionally, it is known that a plurality of LEDs are coated with a coating layer such as a phosphor layer to produce a coated LED.

For example, a method of preparing a support sheet provided with a hard support plate, arranging the semiconductor element on the upper surface of the support sheet, covering the semiconductor element with a sealing layer, and then cutting the sealing layer corresponding to the semiconductor element. Has been proposed (see, for example, Patent Document 1).

In Patent Document 1, a reference mark is provided on the support plate, and the sealing layer is cut with the reference mark as a reference.

Japanese Unexamined Patent Publication No. 2014-168036

However, there are times when you want to reuse the support plate. However, since the support plate is provided with a mark, there is a problem that such a support plate cannot be reused.

Further, since the support plate is hard, there is a problem that it is not easy to provide a mark.

An object of the present invention is to provide a method for manufacturing a sealed optical semiconductor device, which can reuse carriers and easily form an alignment mark on a support layer.

The present invention [1] includes a plurality of steps (1) of preparing a temporary fixing member including a hard carrier, a support layer supported by the carrier and made of a synthetic resin, and a fixing layer supported by the support layer. After the step (2) of temporarily fixing the element aggregate in which the optical semiconductor elements of the above are aligned and arranged to the fixed layer and the step (2), a plurality of the optical semiconductor elements are coated with a sealing layer to obtain the above-mentioned After the step (3) of obtaining the element assembly and the sealing element assembly including the sealing layer and the step (3), the sealing layer is formed so as to individualize the sealing optical semiconductor element. A step (4) for cutting and a step (5) for peeling the sealing element assembly from the fixed layer after the step (4) are provided, and an alignment mark is provided on the support layer, and the support layer is provided with the alignment mark. In the step (2), the element assembly is temporarily fixed to the fixed layer with reference to the alignment mark, and / or, in the step (4), the sealing layer is referred to from the alignment mark. This is a method for manufacturing a sealed optical semiconductor device, which is characterized by cutting.

According to this method, since the alignment mark is provided on the support layer made of synthetic resin instead of the hard carrier, the carrier can be reused if the carrier is separated from the support layer.

Further, since the alignment mark is provided on the support layer made of synthetic resin, the alignment mark can be easily formed on the support layer.

The present invention [2] comprises a temporary fixing member including a hard carrier, a support layer supported by the carrier and made of a synthetic resin, a fixing layer supported by the support layer, and a mark layer supported by the carrier. After the step (1) of preparing, the step (2) of temporarily fixing the element aggregate in which a plurality of optical semiconductor elements are aligned and arranged to the fixed layer, and the step (2), the plurality of said devices are provided by a sealing layer. After the step (3) of coating the optical semiconductor element to obtain the element assembly and the sealing element assembly including the sealing layer, and the step (3), the sealing optical semiconductor element is fragmented. The mark layer is provided with a step (4) of cutting the sealing layer and a step (5) of peeling the sealing element aggregate from the fixed layer after the step (4). Is provided with an alignment mark, and in the step (2), the element assembly is temporarily fixed to the fixed layer with reference to the alignment mark, and / or, in the step (4), the alignment mark is provided. This is a method for manufacturing a sealed optical semiconductor device, which comprises cutting the sealing layer with reference to the above.

According to this method, since the alignment mark is provided on the mark layer instead of the hard carrier, the carrier can be reused if the carrier is separated from the mark layer.

In addition, the alignment mark can be easily formed on the support layer.

The present invention [3] includes a plurality of steps (1) of preparing a temporary fixing member including a hard carrier, a support layer supported by the carrier and made of a synthetic resin, and a fixing layer supported by the support layer. After the step (2) of temporarily fixing the element aggregate in which the optical semiconductor elements of the above are aligned and arranged to the fixed layer and the step (2), the plurality of the optical semiconductor elements are covered with a sealing layer to obtain the above-mentioned A step (3) of obtaining an element assembly and a sealing element assembly including the sealing layer, and a step (5) of peeling the sealing element assembly from the fixed layer after the step (3). An alignment mark is provided on the support layer, and in the step (2), the element assembly is temporarily fixed to the fixed layer with reference to the alignment mark. This is a method for manufacturing a semiconductor element.

According to this method, since the alignment mark is provided on the support layer made of synthetic resin instead of the hard carrier, the carrier can be reused if the carrier is separated from the support layer.

Further, since the alignment mark is provided on the support layer made of synthetic resin, the alignment mark can be easily formed on the support layer.

The present invention [4] comprises a temporary fixing member including a hard carrier, a support layer supported by the carrier and made of a synthetic resin, a fixing layer supported by the support layer, and a mark layer supported by the carrier. After the step (1) of preparing, the step (2) of temporarily fixing the element aggregate in which a plurality of optical semiconductor elements are aligned and arranged to the fixed layer, and the step (2), the plurality of said devices are provided by a sealing layer. After the step (3) of coating the optical semiconductor element to obtain the sealing element assembly including the element assembly and the sealing element assembly and the step (3), the sealing element assembly is formed into the fixed layer. The mark layer is provided with an alignment mark, and in the step (2), the element assembly is temporarily fixed to the fixed layer with reference to the alignment mark. This is a method for manufacturing a sealed optical semiconductor device.

According to this method, since the alignment mark is provided on the mark layer instead of the hard carrier, the carrier can be reused if the carrier is separated from the mark layer.

Further, the alignment mark can be easily formed on the mark layer.

In the present invention [5], the temporary fixing member further includes a first pressure-sensitive adhesive layer, and the temporary fixing member includes the carrier, the first pressure-sensitive adhesive layer, the support layer, and the fixing layer in this order. The method for manufacturing a sealed optical semiconductor device according to any one of [1] to [4], which is characterized by the above.

According to this method, the support layer can be reliably and easily supported via the carrier.

In the present invention [6], the element assembly includes a plurality of the optical semiconductor elements and a second pressure-sensitive adhesive layer for temporarily fixing the plurality of the optical semiconductor elements, and in the step (5), the said first. 2. The method for manufacturing a sealed optical semiconductor device according to any one of [1] to [4], which comprises peeling the pressure-sensitive adhesive layer from the carrier.

According to this method, the support layer can be reliably and easily supported by the carrier.

According to the method of the present invention, the carrier can be reused.

1A to 1E are process diagrams of the first embodiment of the method for manufacturing a sealed optical semiconductor device of the present invention. FIG. , A step of temporarily fixing a plurality of optical semiconductor elements to an element assembly temporary fixing sheet, FIG. 1C is a step of sealing a plurality of optical semiconductor elements with a sealing layer, and FIG. 1D is a step of cutting the sealing layer. FIG. 1E shows a step of peeling the sealing optical semiconductor element from the element assembly temporary fixing sheet, and FIG. 1E shows a step of flip-chip mounting the sealing optical semiconductor element on a substrate. FIG. 2 shows a plan view of the element assembly temporary fixing sheet used in the first embodiment. FIG. 3 shows a cross-sectional view of the element assembly temporary fixing sheet shown in FIG. 2 along the line AA. 4A to 4C are process diagrams of a method of providing an alignment mark using photolithography. FIG. 4A is a process of preparing a support layer with a photosensitive layer including a support layer and a photosensitive layer, and FIG. 4B is a process of preparing a support layer with a photosensitive layer. FIG. 4C shows a step of developing the photosensitive layer. 5A to 5E are modified examples of the method for manufacturing the device assembly temporary fixing sheet of the first embodiment. FIG. 5A shows a step of providing a carrier under the device assembly temporary fixing sheet, and FIG. 5B shows a plurality of steps. The step of temporarily fixing the optical semiconductor element to the element assembly temporary fixing sheet, FIG. 5C is a step of sealing a plurality of optical semiconductor elements with a sealing layer, and FIG. 5D is a step of cutting and sealing the sealing layer. FIG. 5E shows a step of peeling the optical semiconductor element from the element assembly temporary fixing sheet, and FIG. 5E shows a step of flip-chip mounting the sealed optical semiconductor element on the substrate. 6A and 6B are modified examples of the manufacturing method of the sealed optical semiconductor device of the first embodiment, and FIG. 6A shows a step of peeling from the element assembly temporary fixing sheet without cutting the sealing layer. FIG. 6B shows a step of flip-chip mounting the sealing element assembly on the substrate. 7A-7C are process diagrams of the second embodiment of the method for manufacturing a sealed optical semiconductor device of the present invention. FIG. 7A shows a mark layer and a carrier provided under a temporary fixing sheet for an element assembly. FIG. 7B shows a step of preparing a temporary fixing member, FIG. 7B shows a step of temporarily fixing a plurality of optical semiconductor elements to an element assembly temporary fixing sheet, and FIG. 7C shows a step of sealing a plurality of optical semiconductor elements with a sealing layer. .. 8D and 8E are process diagrams of a second embodiment of the method for manufacturing a sealing optical semiconductor device of the present invention, following FIG. 7C. FIG. 8D shows a sealing optical semiconductor obtained by cutting the sealing layer. FIG. 8E shows a step of peeling the element from the element assembly temporary fixing sheet, and FIG. 8E shows a step of flip-chip mounting the sealing optical semiconductor element on the substrate. FIG. 9 shows a plan view of the element assembly temporary fixing sheet used in the second embodiment. FIG. 10 shows a cross-sectional view of a laminated body including the mark layer and the third release layer shown in FIG. 8A. FIG. 11 shows a cross-sectional view of a modified example of the laminated body shown in FIG. 12A to 12F are process diagrams of a third embodiment of the method for manufacturing a sealed optical semiconductor device of the present invention. FIG. 12A shows a carrier provided on an element assembly temporary fixing sheet and a second feeling. A step of providing a pressure-bonding layer on a carrier to prepare a temporary fixing sheet for an element assembly, FIG. 12B is a step of temporarily fixing a plurality of optical semiconductor elements to a second pressure-sensitive adhesive layer, and FIG. 12C is a sealing. A step of sealing a plurality of optical semiconductor elements by a layer, FIG. 12D is a step of cutting the sealing layer, FIG. 12E is a step of peeling the sealing optical semiconductor element from the second pressure-sensitive adhesive layer, and FIG. 12F is a step. The process of flip-chip mounting a sealing optical semiconductor element on a substrate is shown. FIG. 13 shows a cross-sectional view of the element assembly temporary fixing sheet used in the third embodiment. 14A to 14F are modified examples of the method for manufacturing a sealed optical semiconductor device according to the third embodiment. FIG. 14A shows a carrier provided on an element assembly temporary fixing sheet and a second pressure-sensitive adhesive layer. 14B shows a step of temporarily fixing a plurality of optical semiconductor elements to the second pressure-sensitive adhesive layer, and FIG. 14C shows a plurality of steps of preparing a temporary fixing sheet for the element assembly. 14D is a step of cutting the sealing layer, FIG. 14E is a step of peeling the sealing optical semiconductor element from the second pressure-sensitive adhesive layer, and FIG. 14F is a step of peeling the sealing light. The process of flip-chip mounting a semiconductor element on a substrate is shown. 15A to 15C are process diagrams of a modification of the method for manufacturing a sealed optical semiconductor device according to the third embodiment. FIG. 15A shows a second pressure-sensitive adhesive layer as an element without cutting the sealing layer. FIG. 15B shows a step of peeling the optical semiconductor element and the sealing layer from the second pressure-sensitive adhesive layer, and FIG. 15C shows a step of flip-chip mounting the optical semiconductor element on the substrate. show.

In FIG. 1, the vertical direction of the paper surface is the vertical direction (first direction, thickness direction), the upper side of the paper surface is the upper side (one side in the first direction, one side in the thickness direction), and the lower side of the paper surface is the lower side (the other side in the first direction). , The other side in the thickness direction). In FIG. 1, the left-right direction of the paper surface is the left-right direction (second direction orthogonal to the first direction, width direction), the right side of the paper surface is the right side (one side of the second direction, one side of the width direction), and the left side of the paper surface is the left side (one side in the width direction). The other side in the second direction and the other side in the width direction). In FIG. 1, the paper thickness direction is the front-back direction (third direction orthogonal to the first and second directions), the front side of the paper surface is the front side (one side of the third direction), and the back side of the paper surface is the rear side (third direction). On the other side). Specifically, it conforms to the direction arrows in each figure.

1. 1. First Embodiment In the first embodiment of the method for manufacturing a sealed optical semiconductor device of the present invention, a carrier 10, a first pressure-sensitive adhesive layer 4, a support layer 2, and an element assembly fixed layer 3 as an example of a fixed layer are provided. A step of preparing the temporary fixing members 30 to be provided in order (1) (see FIG. 1A) and a step of temporarily fixing the element assembly 16 in which a plurality of optical semiconductor elements 11 are aligned and arranged to the element assembly fixing layer 3 (2). (See FIG. 1B) and after the step (2), a plurality of optical semiconductor devices 11 are coated with the sealing layer 12 to obtain a sealing element assembly 19 including the element assembly 16 and the sealing layer 12. (3) (see FIG. 1C), and after the step (3), a step (4) (see FIG. 1D) of cutting the sealing layer 12 so as to separate the sealing optical semiconductor element 13 into pieces, and a step. After (4), a step (5) (see FIG. 1D) of peeling the sealing element assembly 19 from the element assembly fixing layer 3 is provided. Hereinafter, each step will be described.

1-1. Process (1)
As shown in FIG. 1A, in the step (1), the temporary fixing member 30 is prepared.

The temporary fixing member 30 includes an element assembly temporary fixing sheet 1 and a carrier 10 provided under the element assembly temporary fixing sheet 1.

1-1. (1) Element assembly temporary fixing sheet As shown in FIGS. 2 and 3, the element assembly temporary fixing sheet 1 has a flat plate shape, specifically, has a predetermined thickness, and is orthogonal to the thickness direction. It extends in the direction of the surface (horizontal direction and front-back direction), and has a flat front surface and a flat back surface. The element assembly temporary fixing sheet 1 has a flat plate shape in which the length in the front-rear direction is longer than the length (width) in the left-right direction. Alternatively, the element assembly temporary fixing sheet 1 has a long shape that is long in the front-rear direction.

Further, as shown in FIG. 1A, the element assembly temporary fixing sheet 1 is located at the upper part of the temporary fixing member 30. The element assembly temporary fixing sheet 1 forms the upper surface of the temporary fixing member 30.

As shown in FIG. 3, the element assembly temporary fixing sheet 1 includes an element assembly fixing layer 3, a support layer 2, and a first pressure-sensitive adhesive layer 4 in this order. Specifically, the element assembly temporary fixing sheet 1 includes a support layer 2, an element assembly fixing layer 3 provided on the support layer 2, and a first pressure-sensitive adhesive layer 4 provided under the support layer 2. And. Further, in the element assembly temporary fixing sheet 1, the element assembly fixing layer 3 includes an alignment mark 7. Hereinafter, each member will be described.

1-1. (1) A. Support layer The support layer 2 is located at the center of the element assembly temporary fixing sheet 1 in the thickness direction. That is, the support layer 2 is interposed between the element assembly fixing layer 3 and the first pressure-sensitive adhesive layer 4. The element assembly temporary fixing sheet 1 has a flat plate shape, specifically, has a predetermined thickness, extends in the left-right direction and the front-back direction, and has a flat front surface and a flat back surface. Further, the support layer 2 has flexibility. The support layer 2 supports the element assembly fixing layer 3 and the first pressure-sensitive adhesive layer 4.

The support layer 2 is made of a synthetic resin. Examples of the synthetic resin include polyethylene (for example, low density polyethylene, medium density polyethylene, high density polyethylene, linear low density polyethylene, etc.), polypropylene, ethylene-propylene copolymer, and α-olefin copolymer weight of ethylene-C4 or higher. Olefin polymers such as coalescing, eg ethylene- (meth) acrylate copolymers such as ethylene-ethyl acrylate copolymers, ethylene-methyl methacrylate copolymers, ethylene-n-butyl acrylate copolymers, eg polyethylene terephthalates. (PET), polyesters such as polyethylene naphthalate, eg, polymers such as polycarbonate, eg polyurethane, eg polymers such as polyimide. The copolymer may be either a random copolymer or a block copolymer. The synthetic resin may be used alone or in combination of two or more. Further, the support layer 2 may be made of the above-mentioned synthetic resin porous.

The support layer 2 is preferably made of PET or polycarbonate.

Further, the support layer 2 may be composed of a single layer or a plurality of layers.

Further, the above-mentioned synthetic resin is, for example, transparent. That is, the support layer 2 is transparent. Specifically, the total light transmittance of the support layer 2 is, for example, 80% or more, preferably 90% or more, more preferably 95% or more, and for example, 99.9% or less.

The coefficient of linear expansion of the support layer 2 is, for example, 500 × 10 ^-6 K ^-1 or less, preferably 300 × 10 ^-6 K ^-1 or less, and for example, 2 × 10 ^-6 K ^-1 or more. Preferably, it is 10 × 10 ^-6 K ^-1 or more. When the degree of shrinkage of the support layer 2 is not more than the above-mentioned upper limit, the arrangement of the optical semiconductor elements 11 with respect to the alignment mark 7 and / or the cutting of the sealing layer 12 can be achieved. The coefficient of linear expansion of the support layer 2 is measured by a coefficient of linear expansion measuring device (TMA). The coefficient of linear expansion of each of the following members is also measured by the same method.

The tensile elastic modulus E of the support layer 2 at 25 ° C. is, for example, 200 MPa or less, preferably 100 MPa or less, more preferably 80 MPa or less, and for example, 50 MPa or more. If the tensile elastic modulus E of the support layer 2 at 25 ° C. is equal to or lower than the above-mentioned upper limit, flexibility can be ensured and the alignment mark 7 can be easily provided.

The thickness of the support layer 2 is, for example, 10 μm or more, preferably 30 μm or more, and for example, 350 μm or less, preferably 100 μm or less.

1-1. (1) B. Element assembly fixing layer The element assembly fixing layer 3 is located at the upper end of the element assembly temporary fixing sheet 1. The element assembly fixing layer 3 is arranged on the upper surface of the support layer 2. That is, the element assembly fixing layer 3 forms the upper surface of the element assembly temporary fixing sheet 1. The element assembly fixing layer 3 is supported by the support layer 2. The element assembly fixing layer 3 has a flat plate shape, specifically, has a predetermined thickness, extends in the left-right direction and the front-back direction, and corresponds to a flat front surface and a flat back surface (corresponding to an alignment mark 7 described later). (Excluding the part).

The element assembly fixing layer 3 is configured to temporarily fix the element assembly 16 (described later, see FIGS. 1B and 2) in which a plurality of optical semiconductor elements 11 are aligned and arranged.

Further, the element assembly fixing layer 3 has pressure-sensitive adhesiveness (adhesiveness).

The element assembly fixing layer 3 is made of a pressure-sensitive adhesive. Examples of the pressure-sensitive adhesive include acrylic pressure-sensitive adhesives, rubber-based pressure-sensitive adhesives, SIS (styrene-isoprene-styrene block copolymer) -based pressure-sensitive adhesives, silicone-based pressure-sensitive adhesives, and vinyl. Alkyl ether-based pressure-sensitive adhesive, polyvinyl alcohol-based pressure-sensitive adhesive, polyvinylpyrrolidone-based pressure-sensitive adhesive, polyacrylamide-based pressure-sensitive adhesive, cellulose-based pressure-sensitive adhesive, urethane-based pressure-sensitive adhesive, polyester-based pressure-sensitive adhesive Examples thereof include adhesives, polyamide-based pressure-sensitive adhesives, and epoxy-based pressure-sensitive adhesives. Preferably, a silicone-based pressure-sensitive adhesive is used.

Further, the element assembly fixing layer 3 is transparent. The total light transmittance of the device assembly fixed layer 3 is, for example, 80% or more, preferably 90% or more, more preferably 95% or less, and for example, 99.9% or less.

The coefficient of linear expansion of the element assembly fixed layer 3 is, for example, 500 × 10 ^-6 K ^-1 or less, preferably 300 × 10 ^-6 K ^-1 or less, and for example, 2 × 10 ^-6 K ^{−. 1} or more, preferably 10 × 10 ^-6 K ^-1 or more.

The peeling force when the element assembly fixing layer 3 is pressure-sensitively adhered to the silicon plate and the element assembly fixing layer 3 is peeled from the silicon plate at 180 degrees at 25 ° C. is, for example, 0.1 N / mm or more. It is preferably 0.3 N / mm or more, and for example, 1 N / mm or less. When the peeling force of the element assembly fixing layer 3 is equal to or greater than the above-mentioned lower limit, the plurality of optical semiconductor elements 11 can be reliably temporarily fixed.

The thickness of the device assembly fixing layer 3 is, for example, 5 μm or more, preferably 10 μm or more, and for example, less than 120 μm, preferably less than 100 μm, more preferably 80 μm or less, still more preferably 60 μm or less. be. When the thickness of the element assembly fixing layer 3 exceeds the above-mentioned lower limit, pressure-sensitive adhesiveness can be reliably imparted to the upper surface of the element assembly temporary fixing sheet 1. Therefore, the element assembly temporary fixing sheet 1 can be easily manufactured. When the thickness of the element assembly fixing layer 3 is less than the above-mentioned upper limit, the handleability of the element assembly fixing layer 3 can be improved.

1-1. (1) C.I. First Pressure-Sensitive Adhesive Layer The first pressure-sensitive adhesive layer 4 is located at the lower end of the element assembly temporary fixing sheet 1. Further, the first pressure-sensitive adhesive layer 4 is arranged on the lower surface of the support layer 2. That is, the first pressure-sensitive adhesive layer 4 forms the lower surface of the element assembly temporary fixing sheet 1. The first pressure-sensitive adhesive layer 4 is supported by the support layer 2. Further, the first pressure-sensitive adhesive layer 4 sandwiches the support layer 2 together with the element assembly fixing layer 3 in the thickness direction. The first pressure-sensitive adhesive layer 4 has a flat plate shape, specifically, has a predetermined thickness, extends in the left-right direction and the front-back direction, and has a flat front surface and a flat back surface.

The first pressure-sensitive adhesive layer 4 has pressure-sensitive adhesiveness (adhesiveness).

The first pressure-sensitive adhesive layer 4 is made of the same pressure-sensitive adhesive as the element assembly fixing layer 3.

The first pressure-sensitive adhesive layer 4 is transparent. The total light transmittance of the first pressure-sensitive adhesive layer 4 is, for example, 80% or more, preferably 90% or more, more preferably 95% or less, and for example, 99.9% or less.

The coefficient of linear expansion of the first pressure-sensitive adhesive layer 4 is, for example, 500 × 10 ^-6 K ^-1 or less, preferably 300 × 10 ^-6 K ^-1 or less, and for example, 2 × 10 ^-6 K. ^-1 or more, preferably 10 × 10 ^-6 K ^-1 or more.

The thickness of the first pressure-sensitive adhesive layer 4 is, for example, 5 μm or more, preferably 10 μm or more, and for example, less than 100 μm, preferably 80 μm or less, more preferably 60 μm or less.

1-1. (1) D. Alignment mark As shown in FIG. 3, the alignment mark 7 is provided on the upper surface of the support layer 2.

As shown in FIGS. 2 and 3, specifically, a plurality of alignment marks 7 are provided at the right end portion on the upper surface of the support layer 2. Specifically, the alignment mark 7 is provided in the mark forming region 18 defined on the right side (an example of one side in the width direction) of the element assembly forming region 17 in which the element assembly 16 described later is provided. The mark forming region 18 is arranged along the front-rear direction at the right end portion of the element assembly temporary fixing sheet 1.

The alignment mark 7 is a reference mark for temporarily fixing the element assembly 16 to the element assembly fixing layer 3 and for cutting the sealing layer 12 that seals the element assembly 16. Specifically, the alignment mark 7 includes an arrangement mark 8 and a cutting mark 9. The arrangement mark 8 and the cutting mark 9 are arranged one by one corresponding to a plurality of optical semiconductor elements 11 (described later) arranged in a row in the left-right direction, and they are arranged so as to be spaced apart from each other in the left-right direction. There is.

The arrangement marks 8 are marks located on the left side of the alignment mark 7, and a plurality of arrangement marks 8 are arranged at intervals in the front-rear direction. Each of the plurality of array marks 8 has, for example, a substantially circular shape.

The cut marks 9 are marks located on the right side of the alignment mark 7, and a plurality of cut marks 9 are arranged at intervals in the front-rear direction. Specifically, each of the plurality of cutting marks 9 is arranged so as not to overlap with each of the plurality of array marks 8 when projected in the left-right direction. That is, the plurality of arrangement marks 8 and the plurality of cutting marks 9 are arranged in a staggered pattern, that is, when projected in the left-right direction, they are alternately arranged in the front-rear direction. Each of the plurality of cutting marks 9 is arranged on the right diagonally front side at intervals with respect to each of the plurality of array marks 8. Each of the plurality of cutting marks 9 has, for example, a substantially rod (straight line) shape extending in the left-right direction.

The alignment mark 7 is opaque.

Therefore, the alignment mark 7 is made of an opaque (described later) material. Examples of such a material include a metal material such as silver (metal silver) and a carbon material such as carbon black.

As the metal material, silver is preferable. If it is silver, the visibility of the alignment mark 7 can be further improved.

Moreover, as a carbon material, carbon black is preferable. If it is carbon black, the visibility of the alignment mark 7 can be further improved.

The dimensions of the alignment mark 7 are set as appropriate. The diameter (maximum length) of the sequence mark 8 is, for example, 0.05 mm or more, preferably 0.1 mm or more, and, for example, 1 mm or less, preferably 0.5 mm or less. The distance (that is, pitch) between the centers of the adjacent arrangement marks 8 is, for example, 0.05 mm or more, preferably 0.1 mm or more, and for example, 1.0 mm or less, preferably 0.8 mm or less. ..

The length of the cutting mark 9 in the left-right direction is, for example, 0.05 mm or more, preferably 0.1 mm or more, and for example, 1 mm or less, preferably 0.5 mm or less. The width (length in the front-rear direction) of the cutting mark 9 is, for example, 0.05 mm or more, preferably 0.1 mm or more, and for example, 1 mm or less, preferably 0.25 mm or less. When projected in the front-rear direction, the distance between the array marks 8 and the cutting marks 9 adjacent to each other in the left-right direction is, for example, 0.1 mm or more, preferably 0.2 mm or more, and for example, 1 mm or less, preferably 1 mm or less. , 0.8 mm or less. The pitch between the centers of the cutting marks 9 is, for example, 0.05 mm or more, preferably 0.1 mm or more, and for example, 1.0 mm or less, preferably 0.8 mm or less.

The thickness of the alignment mark 7 is, for example, 0.5 μm or more, preferably 1 μm or more, and for example, 10 μm or less, preferably 5 μm or less.

The total light transmittance of the alignment mark 7 is, for example, 40% or less, preferably 20% or less, more preferably 10% or less, and for example, 0.1% or more.

1-1. (2) Method for Manufacturing Element Assembly Temporary Fixing Sheet Next, a method for manufacturing the element assembly temporary fixing sheet 1 will be described.

In this method, as shown in FIG. 3, the support layer 2 is first prepared, and then the alignment mark 7 is provided.

The method of providing the alignment mark 7 is not particularly limited, and for example, a method using photolithography, heat-sensitive transfer (see, for example, Japanese Patent Application Laid-Open No. 2000-135871), stamp, letterpress printing, intaglio printing, stencil printing (screen printing). , Inkjet printing (see, for example, Japanese Patent Application Laid-Open No. 2014-10823) and the like. From the viewpoint of arranging the alignment mark 7 with high accuracy, a method using photolithography and screen printing are preferable, and a method using photolithography is more preferable.

In the method using photolithography, specifically, as shown in FIGS. 4A to 4C, the step (a) (see FIG. 4A) of preparing the support layer 2 provided with the photosensitive layer 21 and the photolithography are performed. The steps (b) (see FIGS. 4B and 4C) of forming the alignment mark 7 from the photosensitive layer 21 as the development pattern 23 are sequentially performed.

In the step (a), as shown in FIG. 4A, a support layer 22 with a photosensitive layer including a support layer 2 and a photosensitive layer 21 provided on the upper surface thereof is prepared.

The photosensitive layer 21 is provided on the entire upper surface of the support layer 2. The photosensitive layer 21 is made of a photosensitive material capable of forming a development pattern 23 by photolithography. Examples of the photosensitive material include a silver salt emulsion. The silver salt emulsion contains, for example, a silver salt. Examples of the silver salt include an inorganic silver salt such as silver halide, for example, an organic silver salt such as silver acetate, and preferably an inorganic silver salt having an excellent response to light.

The thickness of the photosensitive layer 21 is, for example, 0.5 μm or more, preferably 1 μm or more, and for example, 10 μm or less, preferably 5 μm or less.

In step (b), as shown in FIG. 4B, the photosensitive layer 21 is irradiated with active energy rays via a photomask (not shown). Specifically, the photosensitive layer 21 is partially covered with a metal mask made of a metal such as stainless steel, and then laser light (peak wavelength 150 nm or more, 250 nm or less) is applied to the photosensitive layer 21 exposed from the metal mask. ) Is irradiated.

Then, as shown in FIG. 4C, the photosensitive layer 21 is immersed in a developing solution to leave an exposed portion and remove an unexposed portion (development). As a result, the alignment mark 7 is formed as the development pattern 23.

After that, as shown in FIG. 3, the element assembly fixing layer 3 is provided on the support layer 2, and the first pressure-sensitive adhesive layer 4 is provided under the support layer 2.

In order to provide each of the element assembly fixing layer 3 and the first pressure-sensitive adhesive layer 4 on the support layer 2, first, the element assembly fixing layer 3 and the first pressure-sensitive adhesive layer 4 are prepared, respectively.

The element assembly fixing layer 3 is provided, for example, on the surface of the first release layer 5 (see the virtual line in FIG. 3).

The first pressure-sensitive adhesive layer 4 is provided, for example, on the surface of the second release layer 6 (see the virtual line in FIG. 3).

Next, the element assembly fixing layer 3 is arranged on the upper surface of the support layer 2. At that time, the element assembly fixing layer 3 is arranged on the upper surface of the support layer 2 so as to embed the alignment mark 7.

Further, the first pressure-sensitive adhesive layer 4 is arranged on the lower surface of the support layer 2.

As a result, the support layer 2, the element assembly fixing layer 3 and the first pressure-sensitive adhesive layer 4 arranged above and below them, and the first release layer 5 and the second release layer 6 arranged on them, respectively. A temporary fixing sheet 1 for an assembly of elements including the above is obtained.

The thickness of the element assembly temporary fixing sheet 1 is, for example, 15 μm or more, preferably 40 μm or more, and for example, 550 μm or less, preferably 260 μm or less.

Further, the element assembly temporary fixing sheet 1 has flexibility.

1-2. Carrier The carrier 10 is a support plate for supporting the device assembly temporary fixing sheet 1 (support layer 2) from below. As a result, the carrier 10 supports the support layer 2. The carrier 10 is formed in a substantially flat plate shape extending in the front-rear direction and the left-right direction. As shown in FIG. 1A, the carrier 10 has the same shape as the element assembly temporary fixing sheet 1 in a plan view.

Further, the carrier 10 is located at the lower part of the temporary fixing member 30. The carrier 10 is in direct contact with the lower surface of the element assembly temporary fixing sheet 1. Specifically, the carrier 10 is pressure-sensitively adhered to the lower surface of the element assembly fixing layer 3. The carrier 10 forms the lower surface of the temporary fixing member 30.

The carrier 10 is made of a hard material. Examples of the hard material include a transparent material such as glass, and an opaque material such as ceramic and stainless steel. The Vickers hardness of the hard material is, for example, 0.5 GPa or more, preferably 1 GPa or more, more preferably 1.2 GPa or more, and for example, 10 GPa or less. If the carrier 10 is made of a hard material, specifically, if the Vickers hardness of the hard material is at least the above-mentioned lower limit, the element assembly temporary fixing sheet 1 can be reliably supported.

The thickness of the carrier 10 is, for example, 100 μm or more, preferably 350 μm or more, and for example, 1000 μm or less, preferably 600 μm or less.

1-3. Method for Manufacturing Temporary Fixing Member In order to manufacture the temporary fixing member 30, first, as shown in FIG. 1A, an element assembly temporary fixing sheet 1 and a carrier 10 are prepared, respectively.

Specifically, first, the carrier 10 is arranged on the lower surface of the first pressure-sensitive adhesive layer 4.

Specifically, first, the second release layer 6 shown by the virtual line in FIG. 3 is peeled from the first pressure-sensitive adhesive layer 4, and then, as shown in FIG. 1A, the carrier 10 is attached to the lower surface of the first pressure-sensitive adhesive layer 4. In direct contact with. As a result, the carrier 10 is pressure-sensitively adhered to the first pressure-sensitive adhesive layer 4.

As a result, the temporary fixing member 30 including the carrier 10 and the element assembly temporary fixing sheet 1 in sequence is obtained. Further, the temporary fixing member 30 includes an alignment mark 7 provided on the support layer 2 of the element assembly temporary fixing sheet 1.

The thickness of the temporary fixing member 30 is, for example, 115 μm or more, preferably 390 μm or more, and for example, 1550 μm or less, preferably 860 μm or less.

1-4. Process (2)
Step (2) is carried out after step (1).

In the step (2), as shown by the imaginary line arrow in FIG. 1A, the first release layer 5 is first separated from the upper surface of the element assembly fixing layer 3, and then a plurality of optical semiconductor devices are formed as shown in FIG. 1B. 11 is temporarily fixed to the upper surface of the element assembly fixing layer 3. At this time, a plurality of optical semiconductor elements 11 are arranged (arranged) on the upper surface of the element assembly fixing layer 3 with reference to the arrangement mark 8. Further, a plurality of optical semiconductor elements 11 are provided in the element aggregate forming region 17 in the element aggregate fixed layer 3.

Specifically, the plurality of optical semiconductor elements 11 are brought into direct contact with the upper surface of the element assembly fixing layer 3 while visually recognizing the arrangement mark 8 and positioning the plurality of optical semiconductor elements 11 in the left-right direction and the front-rear direction.

In order to visually recognize the arrangement mark 8, the arrangement mark 8 is visually recognized from above the arrangement mark 8 by a camera or the like provided above the temporary fixing member 30. At this time, since the element assembly fixing layer 3 is transparent, the array mark 8 can be visually recognized from above the element assembly fixing layer 3.

The optical semiconductor element 11 has an upper surface, a lower surface arranged to face the upper surface in the thickness direction, and a peripheral side surface connecting the upper surface and the lower surface. Electrodes are formed on the lower surface.

The plurality of optical semiconductor elements 11 form the element assembly 16 by being aligned and arranged on the upper surface of the element assembly fixing layer 3.

The distance between adjacent optical semiconductor elements 11 (distance in the front-rear direction and / or left-right direction) is, for example, 0.05 mm or more, preferably 0.1 mm or more, and for example, 1.0 mm or less, preferably 1.0 mm or less. Is 0.8 mm or less. The thickness (height) of each of the plurality of optical semiconductor elements 11 is, for example, 0.1 μm or more, preferably 0.2 μm or more, and for example, 500 μm or less, preferably 200 μm or less. The length of each of the plurality of optical semiconductor elements 11 in the left-right direction and / or the length in the front-rear direction is, for example, 0.05 mm or more, preferably 0.1 mm or more, and for example, 1.0 mm or less, preferably 1.0 mm or less. , 0.8 mm or less.

1-5. Process (3)
In step (3), as shown by the solid line in FIG. 1C and the alternate long and short dash line in FIG. 2, the device assembly 16 is then sealed by the sealing layer 12.

For example, the device assembly 16 is sealed with a sealing sheet made of a semi-solid or solid sealing composition. Alternatively, the device assembly 16 is sealed by potting a liquid sealing composition. The sealing composition contains a transparent resin such as a silicone resin or an epoxy resin. If necessary, the sealing composition may contain particles such as a filler, a phosphor, and light-reflecting particles in an appropriate ratio.

The sealing layer 12 covers the upper surface and the side surface of each of the plurality of optical semiconductor elements 11 and the upper surface of the element assembly fixing layer 3 exposed from each of the plurality of optical semiconductor elements 11. The sealing layer 12 is provided on the upper surface of the element assembly fixing layer 3 in the element assembly forming region 17 so as to expose the upper surface of the element assembly fixing layer 3 in the mark forming region 18.

As a result, a sealing element assembly 19 including a plurality of optical semiconductor elements 11 (element assembly 16) and one sealing layer 12 can be obtained. That is, the sealing element assembly 19 is obtained in a state of being temporarily fixed to the element assembly temporary fixing sheet 1.

The thickness of the sealing layer 12 is, for example, 40 μm or more, preferably 50 μm or more, and for example, 500 μm or less, preferably 300 μm or less.

1-6. Process (4)
As shown by the one-dot dashed line in FIG. 1D and the two-dot dashed line in FIG. 2, the sealing layer 12 is then cut so that the optical semiconductor element 11 is fragmented. That is, the sealing element assembly 19 (sealing optical semiconductor element 13 described later) is individualized.

To cut the sealing layer 12, for example, a cutting device provided with a cutting blade, for example, a cutting device provided with a laser irradiation source is used.

Examples of the cutting device including a cutting blade include a dicing device including a disk-shaped dicing saw (dicing blade), for example, a cutting device including a cutter.

A cutting device including a cutting blade, more preferably a dicing device is used.

In the cutting of the sealing layer 12 by the cutting device described above, the sealing layer 12 is cut with reference to the cutting mark 9 of the alignment mark 7. Further, the sealing layer 12 is cut while visually recognizing the cut mark 9 of the alignment mark 7 from above by the same camera as the camera used for visually recognizing the array mark 8.

The length of the cut sealing layer 12 in the front-rear direction and / or the length in the left-right direction is, for example, 20 mm or more, preferably 40 mm or more, and for example, 150 mm or less, preferably 100 mm or less.

As a result, a plurality of sealing optical semiconductor elements 13 including one optical semiconductor element 11 and one sealing layer 12 are obtained in a state of being temporarily fixed to the element assembly fixing layer 3 (temporary fixing member 30). Be done.

1-7. Process (5)
In the step (5), as shown by the arrows in FIG. 1D, each of the plurality of sealing optical semiconductor elements 13 is peeled from the element assembly fixing layer 3.

1-8. Reuse of Carrier and Manufacture of Optical Semiconductor Device After that, in the temporary fixing member 30 from which the plurality of sealing optical semiconductor elements 13 have been peeled off, the carrier 10 is peeled off from the first pressure-sensitive adhesive layer 4 and the carrier 10 is reused. Use. On the other hand, the element assembly temporary fixing sheet 1 (support layer 2, element assembly fixing layer 3 and first pressure-sensitive adhesive layer 4) is discarded. That is, the element assembly temporary fixing sheet 1 is disposable.

Then, as shown in FIG. 1E, the sealing optical semiconductor element 13 is flip-chip mounted on the substrate 14.

The substrate 14 has a flat plate shape extending in the front-rear direction and the left-right direction. Terminals that are electrically connected to the electrodes of the optical semiconductor element 11 are formed on the upper surface of the substrate 14.

As a result, the optical semiconductor device 15 including the sealing optical semiconductor element 13 and the substrate 14 can be obtained.

2. Action and effect of the first embodiment According to this method, the alignment mark 7 is provided on the support layer 2 made of synthetic resin instead of the hard carrier 10. Therefore, if the carrier 10 is peeled off from the support layer 2, the carrier 10 can be removed. Can be reused.

Further, since the alignment mark 7 is provided on the support layer 2 made of synthetic resin, the alignment mark 7 can be easily formed on the support layer 2.

Further, according to this method, the carrier 10 can reliably and easily support the support layer 2 via the first pressure-sensitive adhesive layer 4.

3. 3. Modification Example of First Embodiment In the first embodiment, as shown in FIG. 2, the arrangement mark 8 has a substantially circular shape, and the cutting mark 9 has a substantially linear shape. However, the shape of each of the alignment marks 7 is not particularly limited.

In the first embodiment, the element assembly fixing layer 3 is first formed on the surface of the first release layer 5 (see the virtual line in FIG. 3), and then the element assembly fixing layer 3 is supported from the first release layer 5. Although it is transferred to the layer 2, in the modified example, it can be formed directly on the upper surface of the support layer 2, for example.

In the first embodiment, the first pressure-sensitive adhesive layer 4 is first formed on the surface of the second release layer 6 (see the virtual line in FIG. 3), and then the first pressure-sensitive adhesive layer 4 is formed on the second release layer 6. Is transferred to the support layer 2 from the above, but in the modified example, it can be formed directly on the lower surface of the support layer 2, for example.

Further, in the first embodiment, as shown in FIG. 3, the alignment mark 7 is provided on the upper surface of the support layer 2.

In the modified example, as shown in FIG. 5A, the alignment mark 7 is provided on the lower surface of the support layer 2.

The alignment mark 7 is embedded in the first pressure-sensitive adhesive layer 4.

As shown in FIG. 5B, when a plurality of optical semiconductor elements 11 are arranged on the element assembly fixing layer 3, the element assembly fixing layer 3 and the support layer 2 are arranged by a camera arranged above the temporary fixing member 30. The array mark 8 is visually recognized via.

Further, as shown in FIG. 5D, when the sealing layer 12 is cut, the cutting mark 9 is visually recognized by the above-mentioned camera through the element assembly fixing layer 3 and the support layer 2.

Further, although not shown, alignment marks 7 can be provided on both the upper and lower surfaces of the support layer 2.

Preferably, the alignment mark 7 is provided only on one surface of the support layer 2, that is, only on the upper surface or only on the lower surface. If the alignment mark 7 is provided only on one surface of the support layer 2, the alignment mark 7 can be easily formed as compared with the case where the alignment mark 7 is provided on both the upper and lower surfaces of the support layer 2, and the manufacturing cost is increased accordingly. Can be reduced.

More preferably, as shown in FIG. 3 of the first embodiment, the alignment mark 7 is provided on the upper surface of the support layer 2. According to this configuration, the alignment mark 7 can be more reliably visually recognized from above as compared with the case of FIG. 5A in which the alignment mark 7 is provided on the lower surface of the support layer 2.

Further, in the first embodiment, as shown by the alternate long and short dash line in FIG. 1D, the sealing layer 12 is cut to separate the sealing element assembly 19.

However, in the modified example, as shown in FIG. 6A, the sealing element assembly 19 is peeled off from the element assembly fixing layer 3 without cutting the sealing layer 12, and then the sealing element assembly 19 is sealed as shown in FIG. 6B. The stop element assembly 19 is flip-chip mounted on the substrate 14. That is, this modification does not include the step (4) of the first embodiment, but sequentially includes steps (1) to (3) and (5).

In this modification, since the step (4) for cutting the sealing layer 12 is not performed, the alignment mark 7 may not include the cutting mark 9 and may consist only of the arrangement mark 8, although not shown.

4. Second Embodiment In the second embodiment, the same members and processes as those in the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

In the first embodiment, as shown in FIGS. 1A and 3, an alignment mark 7 is provided on the element assembly temporary fixing sheet 1 (specifically, the support layer 2).

However, any member other than the carrier 10 is not particularly limited, and in the second embodiment, for example, as shown in FIG. 7A, the alignment mark 7 is placed on the mark layer 31 different from the element assembly temporary fixing sheet 1. Can be provided in.

In the step (1), the mark layer 31 is provided under the carrier 10 in the temporary fixing member 30. The mark layer 31 is provided on the temporary fixing member 30. That is, the temporary fixing member 30 includes the element assembly temporary fixing sheet 1, the carrier 10, and the mark layer 31 in this order. The mark layer 31 is supported by the carrier 10.

The mark layer 31 includes a through hole 26 penetrating in the thickness direction. Further, the mark layer 31 includes a mark pressure-sensitive adhesive layer 33 arranged on the lower surface of the carrier 10 and a mark support layer 32 that supports the mark pressure-sensitive adhesive layer 33 in this order. The through hole 26 is provided as an alignment mark 7 by collectively penetrating the mark pressure-sensitive adhesive layer 33 and the mark support layer 32.

The mark pressure-sensitive adhesive layer 33 is made of the same pressure-sensitive adhesive as the element assembly fixing layer 3 described above, and has the same physical properties as the element assembly fixing layer 3. The mark support layer 32 is made of the same synthetic resin as the support layer 2 and has the same physical characteristics as the support layer 2.

In particular, of the mark support layer 32 and the mark pressure-sensitive adhesive layer 33, for example, some layers are colored and the remaining layers are colorless. The total light transmittance of the above-mentioned colored layers is, for example, 80% or less, preferably 65% or less, and more preferably 50% or less, respectively.

On the other hand, the carrier 10 is preferably colorless in order to improve the visibility of the alignment mark 7 from above. The carrier 10 is preferably made of a transparent material. Further, the element assembly fixing layer 3, the support layer 2 and the first pressure-sensitive adhesive layer 4 are preferably colorless. The total light transmittance of the carrier 10, the element assembly fixing layer 3, the support layer 2 and the first pressure-sensitive adhesive layer 4 is, for example, 80% or more, preferably 90% or more, more preferably 95% or more, respectively. And, for example, 99.9% or less.

Therefore, if the carrier 10, the element assembly fixing layer 3, the support layer 2, and the first pressure-sensitive adhesive layer 4 are colorless, and at least one layer in the mark layer 31 is colored, the through hole 26 is colorless. Is visible in plan view. That is, as shown in FIG. 9, the through hole 26 is clearly visible due to the contrast between at least one layer of the colored mark layer 31 and the colorless through hole 26.

In order to manufacture the element assembly temporary fixing sheet 1, as shown in FIG. 7A, in the step (1), the element assembly temporary fixing sheet including the mark layer 31, the carrier 10, and the element assembly temporary fixing sheet 1 is provided in this order. Prepare 1.

As for the mark layer 31, as shown in FIG. 10, first, a laminated body including the third peeling layer 35, the mark pressure-sensitive adhesive layer 33, and the mark support layer 32 is prepared in this order, and then the laminated body (third peeling) is prepared. A through hole 26 that penetrates the layer 35, the mark pressure-sensitive adhesive layer 33, and the mark support layer 32) in the thickness direction is formed as the alignment mark 7.

The through hole 26 is formed by, for example, cutting, punching, laser processing, or the like. Preferably, the through hole 26 is formed by laser processing. Examples of the laser processing include an excimer laser, a YAG laser, a CO ₂ laser, and the like, preferably from the viewpoint of continuously manufacturing the temporary fixing member 30 on a reel-to-reel basis and forming a through hole 26 in a wide area. From this point of view, a YAG laser can be mentioned.

Then, the third release layer 35 is peeled from the mark pressure-sensitive adhesive layer 33, and then the upper surface of the mark pressure-sensitive adhesive layer 33 is pressure-sensitively adhered to the lower surface of the carrier 10.

Separately, the first pressure-sensitive adhesive layer 4 of the element assembly temporary fixing sheet 1 is pressure-sensitively bonded to the upper surface of the carrier 10.

Then, as shown in FIG. 7B, in the step (2), a plurality of optical semiconductor elements 11 are aligned (arranged) on the upper surface of the element assembly fixing layer 3 with reference to the arrangement mark 8.

At this time, while visually recognizing the arrangement mark 8 from above and positioning the plurality of optical semiconductor elements 11 in the left-right direction and the front-rear direction, the plurality of optical semiconductor elements 11 are brought into direct contact with the upper surface of the element assembly fixing layer 3.

Specifically, the array mark 8 (through hole 26) is visually recognized as colorless. The arrangement mark 8 (through hole 26) is clearly visible by the contrast with the color of at least one of the mark pressure-sensitive adhesive layer 33 and the mark support layer 32 (see FIG. 9).

Further, as shown in FIG. 8D, when cutting the sealing layer 12 in the step (4), the cutting mark 9 is used as a reference. Specifically, the cutting mark 9 (through hole 26) is visually recognized by the same method as the visual recognition of the arrangement mark 8 (through hole 26) described above (see FIG. 9).

As shown by the arrows in FIG. 8D, in the step (5), each of the plurality of sealing optical semiconductor elements 13 is peeled off from the element assembly fixing layer 3, and subsequently, in the temporary fixing member 30, the carrier 10 is separated. 1 The carrier 10 is reused by peeling from the pressure-sensitive adhesive layer 4 (element assembly temporary fixing sheet 1) and the mark pressure-sensitive adhesive layer 33 (mark layer 31), respectively. On the other hand, the element assembly temporary fixing sheet 1 (support layer 2, element assembly fixing layer 3 and first pressure-sensitive adhesive layer 4) and the mark layer 31 (mark support layer 32 and mark pressure-sensitive adhesive layer 33) are formed. Discard. That is, the element assembly temporary fixing sheet 1 and the mark layer 31 are disposable.

5. Actions and effects of the second embodiment The same actions and effects as those of the first embodiment can be obtained by the second embodiment.

Further, according to this method, since the alignment mark 7 is provided on the mark layer 31 instead of the hard carrier 10, the carrier 10 can be reused if the carrier 10 is separated from the mark layer 31.

Further, the alignment mark 7 can be easily and easily formed on the mark layer 31.

In the above method, as shown in FIG. 10, a through hole 26 is formed which penetrates the third release layer 35, the mark pressure-sensitive adhesive layer 33, and the mark support layer 32 together. However, for example, as shown in FIG. 11, it is also possible to form a through hole 26 that does not penetrate the third release layer 35 but penetrates only the mark pressure-sensitive adhesive layer 33 and the mark support layer 32.

Further, although not shown, the alignment mark 7 may be provided as a recess in the mark layer 31 that is recessed in the middle in the thickness direction.

Further, although not shown, the alignment mark 7 can be formed from the opaque material exemplified in the first embodiment instead of the through hole 26. For example, the alignment mark 7 is provided on the mark support layer 32.

Preferably, the alignment mark 7 is formed as a through hole 26 penetrating the mark layer 31. If the alignment mark 7 is formed as a through hole 26 penetrating the mark layer 31, the alignment mark 7 can be easily and easily formed.

6. Third Embodiment In the third embodiment, the same members and processes as those in the first and second embodiments are designated by the same reference numerals, and detailed description thereof will be omitted.

6-1. Process (1)
In the step (1), as shown in FIG. 12A, a temporary fixing member 30 including the element assembly temporary fixing sheet 1 and the carrier 10 in this order is prepared.

The element assembly temporary fixing sheet 1 does not include the first pressure-sensitive adhesive layer 4 (see the solid line in FIG. 3), but includes a support layer 2 and an element assembly fixing layer 3. Further, although not shown in FIG. 12A, the element assembly temporary fixing sheet 1 may further include a first release layer 5 (see FIG. 3). Preferably, the element assembly temporary fixing sheet 1 is composed of only the support layer 2 and the element assembly fixing layer 3, and if necessary, preferably, the support layer 2, the element assembly fixing layer 3 and the first release layer 5 are formed. Consists of only.

In order to manufacture the element assembly temporary fixing sheet 1, the support layer 2 is first prepared, and then the alignment mark 7 is provided on the support layer 2 by the above method (methods 4A to 4C). After that, the element assembly fixing layer 3 is provided on the entire upper surface of the support layer 2.

In the step (1), in order to prepare the temporary fixing member 30, first, the first peeling layer 5 (see FIG. 13) is peeled from the device assembly fixing layer 3, and then, as shown in FIG. 12A, the carrier. 10 is arranged on the upper surface of the element assembly fixing layer 3.

The carrier 10 is made of a transparent material such as glass. The total light transmittance of the carrier 10 is, for example, 80% or more, preferably 90% or more, more preferably 95% or more, and for example, 99.9% or less.

As a result, a temporary fixing member 30 including the support layer 2, the element assembly fixing layer 3 and the carrier 10 in that order can be obtained. The temporary fixing member 30 preferably includes only the support layer 2, the element assembly fixing layer 3, and the carrier 10.

The thickness of the temporary fixing member 30 is, for example, 115 μm or more, preferably 390 μm or more, and for example, 1550 μm or less, preferably 860 μm or less.

6-2. Process (2)
In step (2), as shown in FIG. 12B, the element assembly 16 is supported by the carrier 10.

Specifically, first, as shown in FIG. 12A, the second pressure-sensitive adhesive layer 25 is arranged on the upper surface of the carrier 10.

The second pressure-sensitive adhesive layer 25 has a flat plate shape, has a predetermined thickness, extends in the left-right direction and the front-back direction, and has a flat front surface and a flat back surface. The second pressure-sensitive adhesive layer 25 has pressure-sensitive adhesiveness (adhesiveness). The second pressure-sensitive adhesive layer 25 has the same layer structure as the above-mentioned element assembly temporary fixing sheet 1 (support layer 2, element assembly fixing layer 3, first pressure-sensitive adhesive layer 4) shown in FIG. Further, the second pressure-sensitive adhesive layer 25 can also be made of the adhesive layer described in JP-A-2014-168036. The second pressure-sensitive adhesive layer 25 has a smaller dimension than the element assembly temporary fixing sheet 1 in a plan view, and specifically, when projected in the thickness direction, the alignment mark 7 and the alignment mark 7 are formed. They are arranged so that they do not overlap. Specifically, the second pressure-sensitive adhesive layer 25 is arranged in the element assembly forming region 17 of the carrier 10. The thickness of the second pressure-sensitive adhesive layer 25 is, for example, 30 μm or more, preferably 50 μm or more, and for example, 500 μm or less, preferably 300 μm or less.

As shown in FIG. 12B, a plurality of optical semiconductor elements 11 are then pressure-sensitively bonded to the upper surface of the second pressure-sensitive adhesive layer 25.

At this time, while visually recognizing the alignment mark 8 of the alignment mark 7 from above the temporary fixing member 30, a plurality of optical semiconductor elements 11 are aligned and arranged on the upper surface of the second pressure-sensitive adhesive layer 25 with reference to the alignment mark 8. (Arrange). The array mark 8 is visually recognized via the transparent carrier 10 and the device assembly fixing layer 3.

As a result, the element assembly 16 including one second pressure-sensitive adhesive layer 25 and the plurality of optical semiconductor elements 11 is obtained in a state of being supported by the carrier 10. That is, the element assembly 16 is supported by the carrier 10. That is, the element assembly 16 is temporarily fixed to the element assembly temporary fixing sheet 1 (element assembly fixing layer 3) via the carrier 10.

6-3. Process (3)
In the step (3), as shown in FIG. 12C, the sealing layer 12 then seals the plurality of optical semiconductor devices 11 in the element assembly 16.

The sealing layer 12 covers the upper surface and the side surface of each of the plurality of optical semiconductor elements 11 and the upper surface of the second pressure-sensitive adhesive layer 25 exposed from each of the plurality of optical semiconductor elements 11. On the other hand, the sealing layer 12 is not formed on the upper surface of the carrier 10.

As a result, the sealing element assembly 19 including the element assembly 16 and the sealing layer 12 covering the element assembly 16 is obtained. The sealing element assembly 19 sequentially includes one second pressure-sensitive adhesive layer 25, a plurality of optical semiconductor elements 11, and one sealing layer 12. The sealing element assembly 19 preferably comprises only one second pressure-sensitive adhesive layer 25, a plurality of optical semiconductor elements 11, and one sealing layer 12.

6-4. Process (4)
In step (4), the sealing layer 12 is then cut, as shown by the alternate long and short dash line in FIG. 12D.

As a result, a plurality of sealing optical semiconductor elements 13 including one optical semiconductor element 11 and one sealing layer 12 can be obtained in a state of being temporarily fixed to the second pressure-sensitive adhesive layer 25.

6-5. Process (5)
In the step (5), as shown in FIG. 12E, the sealing element assembly 19 is peeled off from the upper surface of the carrier 10.

Subsequently, as shown by the arrows in FIG. 12E, each of the plurality of sealing optical semiconductor elements 13 is peeled from the second pressure-sensitive adhesive layer 25.

6-6. Reuse of Carriers and Manufacture of Optical Semiconductor Devices In the temporary fixing member 30, the carrier 10 is peeled off from the upper surface of the element assembly fixing layer 3 to reuse the carrier 10. On the other hand, the element assembly temporary fixing sheet 1 (support layer 2 and element assembly fixing layer 3) is discarded. That is, the element assembly temporary fixing sheet 1 is disposable.

As shown in FIG. 12F, the sealing optical semiconductor element 13 is then flip-chip mounted on the substrate 14 to obtain the optical semiconductor device 15.

7. Actions and effects of the third embodiment The same actions and effects as those of the first embodiment can be obtained by the third embodiment.

Specifically, the carrier 10 can reliably and easily support the support layer 2 via the second pressure-sensitive adhesive layer 25.

Further, as shown in FIG. 13, this element assembly temporary fixing sheet 1 does not include the first pressure-sensitive adhesive layer 4 (see FIG. 3), and therefore, therefore, the first embodiment including the first pressure-sensitive adhesive layer 4. The layer structure can be simplified as compared with the element assembly temporary fixing sheet 1.

8. Modification of the Third Embodiment In the third embodiment, as shown in FIG. 12A, the alignment mark 7 is provided on the upper surface of the support layer 2.

In the modified example, as shown in FIG. 14A, the alignment mark 7 is provided on the lower surface of the support layer 2.

The alignment mark 7 is exposed downward.

As shown in FIG. 14B, when arranging the plurality of optical semiconductor elements 11 on the second pressure-sensitive adhesive layer 25 in the step (2), the carrier 10 is arranged by the camera arranged above the temporary fixing member 30. The array mark 8 is visually recognized via the element assembly fixing layer 3 and the support layer 2.

As shown in FIG. 14D, when the sealing layer 12 is cut in the step (4), the cutting mark 9 is made by the above-mentioned camera via the carrier 10, the element assembly fixing layer 3 and the support layer 2. Visualize.

Further, although not shown, alignment marks 7 can be provided on both the upper and lower surfaces of the support layer 2.

Preferably, the alignment mark 7 is provided only on one surface of the support layer 2, that is, only on the upper surface or only on the lower surface. If the alignment mark 7 is provided only on one surface of the support layer 2, the alignment mark 7 can be easily formed as compared with the case where the alignment mark 7 is provided on both the upper and lower surfaces of the support layer 2, and the manufacturing cost is increased accordingly. Can be reduced.

More preferably, as shown in FIG. 13 of the third embodiment, the alignment mark 7 is provided on the upper surface of the support layer 2. According to this configuration, the alignment mark 7 can be more reliably visually recognized from above as compared with the case of FIG. 14A in which the alignment mark 7 is provided on the lower surface of the support layer 2.

Further, although not shown, the alignment mark 7 may be provided as a through hole or a recess through which the support layer 2 penetrates in the thickness direction.

Further, in the third embodiment, the sealing layer 12 is cut as shown by the alternate long and short dash line in FIG. 12D.

However, in the modified example, as shown in FIG. 15A, the second pressure-sensitive adhesive layer 25 is peeled off from the upper surface of the carrier 10 without cutting the sealing layer 12. That is, the step (4) is not carried out.

Next, as shown in FIG. 15B, the sealing element assembly 19 is peeled off from the lower surface of each of the plurality of optical semiconductor elements 11 and the lower surface of the sealing layer 12.

After that, as shown in FIG. 15C, a plurality of optical semiconductor elements 11 are flip-chip mounted on the substrate 14.

This modification does not include the step (4) of the third embodiment, but sequentially includes steps (1) to (3) and (5).

In this modification, as shown in FIG. 15A, since the step (4) for cutting the sealing layer 12 is not performed, the alignment mark 7 does not have the cutting mark 9 and is composed of only the alignment mark 8, although it is not shown. You may be.

Specific numerical values such as the compounding ratio (content ratio), physical property values, and parameters used in the following description are the compounding ratios (content ratio) corresponding to those described in the above-mentioned "Form for carrying out the invention". ), Physical property values, parameters, etc., can be replaced with the corresponding upper limit value (numerical value defined as "less than or equal to" or "less than") or lower limit value (numerical value defined as "greater than or equal to" or "excess"). can.

Example 1 (Example corresponding to the first embodiment)
1-1. Process (1)
As shown in FIG. 4A, first, a photosensitive layer including a support layer 2 having a thickness of 175 μm made of PET and a photosensitive layer 21 having a thickness of 3 μm made of a silver salt emulsion containing silver halide provided on the upper surface thereof. The attached support layer 22 was prepared (step (a)). The length of the support layer 22 with the photosensitive layer in the front-rear direction was 600 mm, and the length in the left-right direction was 500 mm.

The total light transmittance of the support layer 2 was 95%. The coefficient of linear expansion of the support layer 2 was 70 × 10 ^-6 K ^-1 . The tensile elastic modulus E of the support layer 2 at 25 ° C. was 60 MPa.

The total light transmittance of the device assembly fixed layer 3 was 95%. The coefficient of linear expansion of the element assembly fixed layer 3 was 220 × 10 ^-6 K ^-1 .

Subsequently, as shown in FIG. 4B, the photosensitive layer 21 is partially covered with a metal mask made of stainless steel, and then laser light having a peak wavelength of 193 nm with respect to the photosensitive layer 21 exposed from the metal mask. Was irradiated. As a result, the array mark 8 and the cut mark 9 were formed as an exposure pattern.

Then, the support layer 22 with a photosensitive layer was immersed in a developing solution to leave an exposed portion and remove (developed) an unexposed portion. As a result, as shown in FIGS. 2 and 4C, the alignment mark 7 having the circular arrangement mark 8 and the linear cutting mark 9 was formed as the development pattern 23.

The diameter of the array marks 8 was 0.5 mm, the spacing between the adjacent array marks 8 was 1.14 mm, and the pitch of the adjacent array marks 8 was 1.64 mm. The length of the cutting mark 9 in the left-right direction was 0.5 mm, and the length in the front-rear direction was 0.2 mm. The distance between the adjacent cutting marks 9 was 1.62 mm, and the pitch of the adjacent cutting marks 9 was 1.64 mm.

The alignment mark 7 was opaque and had a total light transmittance of 10%.

Separately, a device assembly fixing layer 3 having a thickness of 25 μm made of a silicone-based adhesive is prepared on the surface of the first release layer 5, while a first feeling having a thickness of 15 μm made of a silicone-based adhesive is prepared on the surface of the second release layer 6. The pressure-bonding layer 4 was prepared.

Next, the element assembly fixing layer 3 was arranged on the upper surface of the support layer 2 so as to include the alignment mark 7, and the first pressure-sensitive adhesive layer 4 was arranged on the lower surface of the support layer 2.

As a result, as shown in FIG. 3, the element assembly temporary fixing sheet 1 including the second release layer 6, the first pressure-sensitive adhesive layer 4, the support layer 2, the element assembly fixing layer 3 and the first release layer 5 in that order. Got

Then, the second peeling layer 6 was peeled from the first pressure-sensitive adhesive layer 4, and then, as shown in FIG. 1A, a carrier 10 having a thickness of 700 μm made of glass was arranged on the lower surface of the first pressure-sensitive adhesive layer 4. ..

As a result, as shown in FIG. 1A, a temporary fixing member 30 including an element assembly temporary fixing sheet 1 and a carrier 10 provided under the element assembly temporary fixing sheet 1 is prepared. The thickness of the temporary fixing member 30 was 790 μm.

1-4. Process (2)
As shown by the virtual line arrow in FIG. 1A, after the first peeling layer 5 is peeled from the upper surface of the element assembly fixing layer 3, as shown in FIG. 1B, a plurality of optical semiconductor elements 11 are arranged with the arrangement mark 8. As a reference, they were aligned and arranged on the element assembly fixed layer 3. At this time, the camera visually recognized the array mark 8 from above.

The thickness of the optical semiconductor element 11 is 150 μm, the left-right length and the front-back direction length of the optical semiconductor element 11 are 1.14 mm, and the distance between adjacent optical semiconductor elements 11 is 0.5 mm or more. Met.

1-5. Process (3)
As shown in FIG. 1C, the device assembly 16 was then sealed with the sealing layer 12. The sealing layer 12 was formed from a sealing composition containing 100 parts by mass of a silicone resin and 15 parts by mass of a phosphor. The thickness of the sealing layer 12 was 400 μm. As a result, a sealing element assembly 19 including a plurality of optical semiconductor elements 11 and one sealing layer 12 was obtained.

1-6. Process (4)
As shown by the alternate long and short dash line in FIG. 1D and FIG. 2, the sealing layer 12 was then cut with a dicing saw with reference to the cutting mark 9, and the sealing element assembly 19 was separated into individual pieces. At this time, the camera visually recognized the cut mark 9 from above. The length of the cut sealing layer 12 in the left-right direction and the length in the front-rear direction were 100 mm, respectively.

As a result, a plurality of sealing optical semiconductor elements 13 including the optical semiconductor element 11 and the sealing layer 12 were obtained in a state of being temporarily fixed to the temporary fixing member 30.

1-7. Process (5)
Subsequently, as shown by the arrows in FIG. 1D, each of the plurality of sealing optical semiconductor elements 13 was separated from the element assembly fixing layer 3.

Then, as shown in FIG. 1E, the sealing optical semiconductor element 13 was flip-chip mounted on the substrate 14.

Example 2 (Example corresponding to the first embodiment)
In step (1), the alignment mark 7 was processed in the same manner as in Example 1 except that the alignment mark 7 was formed by inkjet printing and drying of a coating liquid containing carbon black to obtain a device assembly temporary fixing sheet 1, followed by , The sealing optical semiconductor element 13 was manufactured using the element assembly temporary fixing sheet 1, and subsequently, the optical semiconductor device 15 was manufactured.

Example 3 (Example corresponding to the second embodiment)
In step (1), except for the following changes, the same processing as in Example 1 was performed to obtain a device assembly temporary fixing sheet 1, and subsequently, the device assembly temporary fixing sheet 1 was used for sealing. The light-blocking semiconductor element 13 was manufactured (see FIGS. 7A to 8D), and subsequently, the optical semiconductor device 15 was manufactured (see FIG. 8E).

In step (1), as shown in FIG. 10, first, a third release layer 35 having a thickness of 50 μm made of polyester, a mark pressure-sensitive adhesive layer 33 having a thickness of 6 μm made of a silicone-based pressure-sensitive adhesive, and polyimide A laminate (trade name "TRM-6250-L", manufactured by Nitto Denko KK) having a mark support layer 32 having a thickness of 25 μm was prepared.

The total light transmittance of the support layer 2 was 95%. The coefficient of linear expansion of the support layer 2 was 70 × 10 ^-6 K ^-1 . The tensile elastic modulus E of the support layer 2 at 25 ° C. was 60 MPa.

The total light transmittance of the device assembly fixed layer 3 was 95%. The coefficient of linear expansion of the element assembly fixed layer 3 was 220 × 10 ^-6 K ^-1 .

Next, as shown in FIG. 10, a through hole 26 was formed by a YAG laser in the same pattern as in Example 1 so as to penetrate the laminated body. The conditions of the YAG laser were as follows.

YAG laser: MODEL5330 (manufactured by ESI)
Beam diameter: 5 μm
Laser power: 2.5W
Pulse repetition frequency: 30 kHz
Scanning speed = 150 mm / sec As a result, a through hole 26 was formed as an alignment mark 7 in the third peeling layer 35 and the mark layer 31 supported by the third peeling layer 35 (the mark pressure-sensitive adhesive layer 33 and the mark support layer 32).

Then, the third release layer 35 was peeled from the mark pressure-sensitive adhesive layer 33, and then, as shown in FIG. 7A, the mark pressure-sensitive adhesive layer 33 was pressure-sensitively adhered to the lower surface of the carrier 10. Separately, the lower surface of the first pressure-sensitive adhesive layer 4 in the element assembly temporary fixing sheet 1 was pressure-sensitively bonded to the upper surface of the carrier 10.

As a result, a temporary fixing member 30 including the carrier 10, the element assembly temporary fixing sheet 1 supported by the carrier 10, and the mark layer 31 supported by the carrier 10 was obtained.

Example 4 (Example corresponding to the third embodiment)
4-1. Process (1)
A device assembly temporary fixing sheet 1 was obtained in the same manner as in Example 1 except that the second release layer 6 and the first pressure-sensitive adhesive layer 4 were not provided. That is, as shown in FIG. 13, the element assembly temporary fixing sheet 1 is sequentially provided with the support layer 2, the element assembly fixing layer 3, and the first release layer 5. The thickness of the element assembly temporary fixing sheet 1 was 100 μm.

Then, the first release layer 5 was separated from the element assembly fixing layer 3, and subsequently, as shown in FIG. 12A, a carrier 10 having a thickness of 700 μm made of glass was arranged on the upper surface of the element assembly fixing layer 3. As a result, the temporary fixing member 30 was prepared. The thickness of the temporary fixing member 30 was 800 μm.

4-2. Process (2)
Separately, a second pressure-sensitive adhesive layer 25 having a thickness of 90 μm made of an element assembly temporary fixing sheet 1 composed of a support layer 2, an element assembly fixing layer 3, and a first pressure-sensitive adhesive layer 4 was arranged on the upper surface of the carrier 10. ..

As shown in FIG. 12B, a plurality of optical semiconductor elements 11 were then aligned and arranged on the upper surface of the second pressure-sensitive adhesive layer 25 with reference to the arrangement mark 8. At this time, the camera visually recognized the array mark 8 from above. The dimensions of the optical semiconductor element 11 and the dimensions between the adjacent optical semiconductor elements 11 were the same as in the first embodiment.

As a result, the element assembly 16 including the second pressure-sensitive adhesive layer 25 and the plurality of optical semiconductor elements 11 was obtained in a state of being supported by the element assembly temporary fixing sheet 1 via the carrier 10.

4-3. Process (3)
As shown in FIG. 12C, the sealing layer 12 then sealed the plurality of optical semiconductor devices 11 in the element assembly 16. The sealing layer 12 was formed from a sealing composition containing 100 parts by mass of a silicone resin and 15 parts by mass of a phosphor. The thickness of the sealing layer 12 was 400 μm.

As a result, a sealing element assembly 19 including an element assembly 16 and a sealing layer 12 covering a plurality of optical semiconductor elements 11 was obtained.

4-4. Process (4)
As shown by the alternate long and short dash line in FIG. 12D, the sealing layer 12 was then cut with a dicing saw with reference to the cutting mark 9. At this time, the camera visually recognized the cut mark 9 from above. The length of the cut sealing layer 12 in the left-right direction and the length in the front-rear direction were 1.62 mm, respectively.

4-5. Process (5)
Then, as shown by the arrow in FIG. 12E, the sealing element assembly 19 was peeled off from the upper surface of the carrier 10. Subsequently, each of the plurality of sealing optical semiconductor elements 13 was peeled off from the second pressure-sensitive adhesive layer 25.

Then, as shown in FIG. 12F, the sealing optical semiconductor element 13 was flip-chip mounted on the substrate 14 to obtain an optical semiconductor device 15.

Example 5 (Example corresponding to the third embodiment)
In step (1), the alignment mark 7 was processed in the same manner as in Example 4 except that the alignment mark 7 was formed by inkjet printing and drying of a coating liquid containing carbon black to obtain a device assembly temporary fixing sheet 1, followed by , The sealing optical semiconductor element 13 was manufactured using the element assembly temporary fixing sheet 1, and subsequently, the optical semiconductor device 15 was manufactured.

2 Support layer 3 Element assembly fixing layer 4 First pressure-sensitive adhesive layer 7 Alignment mark 10 Carrier 11 Optical semiconductor element 12 Encapsulation layer 13 Encapsulation optical semiconductor element 16 Element assembly 19 Encapsulation element assembly 23 Development pattern 25 2 Pressure-sensitive adhesive layer 30 Temporary fixing member 31 Mark layer

Claims (6)

A step (1) of preparing a temporary fixing member having a hard carrier, a support layer supported by the carrier and made of a synthetic resin, a fixing layer supported by the support layer, and a mark layer supported by the carrier. ,
A step (2) of temporarily fixing an element aggregate in which a plurality of optical semiconductor elements are aligned and arranged to the fixed layer, and
After the step (2), a step (3) of coating a plurality of the optical semiconductor elements with a sealing layer to obtain the element assembly and the sealing element assembly including the sealing layer.
After the step (3), a step (4) of cutting the sealing layer so as to separate the sealing optical semiconductor element.
After the step (4), a step (5) of peeling the sealing element assembly from the fixed layer is provided.
A cutting mark is provided on the mark layer.
In the step (4), the sealing layer is cut with reference to the cutting mark, and the sealing layer is cut.
The mark layer is characterized that you have been formed on the side opposite to the side where the supporting layer is formed in the carrier, the manufacturing method of the sealing optical semiconductor elements. The method for manufacturing a sealed optical semiconductor device according to claim 1, wherein the cutting mark is provided by photolithography or printing. The method for manufacturing a sealed optical semiconductor device according to claim 1 or 2 , wherein the cutting mark is formed from a metal material or a carbon material. The temporary fixing member further includes a first pressure-sensitive adhesive layer.
The sealing optical semiconductor according to any one of claims 1 to 3 , wherein the temporary fixing member includes the carrier, the first pressure-sensitive adhesive layer, the support layer, and the fixing layer in this order. Manufacturing method of the element. A temporary fixing member including a hard carrier, a support layer supported by the carrier and made of a synthetic resin, and a fixing layer supported by the support layer, wherein the support layer, the fixing layer, and the carrier are provided. The step (1) of preparing the temporary fixing member provided in order toward one side in the thickness direction, and
A step of arranging the second pressure-sensitive adhesive layer on one surface in the thickness direction of the carrier, and
A step of temporarily fixing a plurality of optical semiconductor elements to one surface in the thickness direction of the second pressure-sensitive adhesive layer to provide the plurality of the optical semiconductor elements and the element assembly including the plurality of the optical semiconductor elements (2). When,
After the step (2), a step (3) of coating a plurality of the optical semiconductor elements with a sealing layer to obtain the element assembly and the sealing element assembly including the sealing layer.
After the step (3), a step (4) of cutting the sealing layer so as to separate the sealing optical semiconductor element.
The step (4) is followed by a step (5) of peeling the second pressure-sensitive adhesive layer from the carrier.
The support layer is provided with an alignment mark.
In the step (2), the optical semiconductor element is temporarily fixed to the second pressure-sensitive adhesive layer with reference to the alignment mark, and / or in the step (4), the alignment mark is used as a reference. , A method for manufacturing a sealed optical semiconductor device, which comprises cutting the sealing layer. A temporary fixing member including a hard carrier, a support layer supported by the carrier and made of a synthetic resin, and a fixing layer supported by the support layer, wherein the support layer, the fixing layer, and the carrier are provided. The step (1) of preparing the temporary fixing member provided in order toward one side in the thickness direction, and
A step of arranging the second pressure-sensitive adhesive layer on one surface in the thickness direction of the carrier, and
A step of temporarily fixing a plurality of optical semiconductor elements to one surface in the thickness direction of the second pressure-sensitive adhesive layer to provide the plurality of the optical semiconductor elements and the element assembly including the plurality of the optical semiconductor elements (2). When,
After the step (2), a step (3) of coating a plurality of the optical semiconductor elements with a sealing layer to obtain the element assembly and the sealing element assembly including the sealing layer.
The step (3) is followed by a step (5) of peeling the second pressure-sensitive adhesive layer from the carrier.
The support layer is provided with an array mark.
The step (2) is a method for manufacturing a sealed optical semiconductor element, which comprises temporarily fixing the optical semiconductor element to the second pressure-sensitive adhesive layer with reference to the arrangement mark.

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