JP6888231B2 - Optical control device and its manufacturing method, optical integrated circuit and electromagnetic wave detection device - Google Patents

Description

The present invention relates to an optical control device, a method for manufacturing the same, an optical integrated circuit, and an electromagnetic wave detection device.

An optical control device including an electro-optical polymer layer in a two-dimensional photonic crystal slot waveguide is known (see Non-Patent Document 1). Forming the electro-optic polymer layer involves filling the slot waveguide with the electro-optic polymer material and orienting the electro-optic polymer material by applying a polling electric field to the electro-optic polymer material.

Che-Yun Lin, 7 outsiders, "Electro-optic polymer infiltrated silicon photonic crystal slot waveguide modulator with 23 dB slow light enhancement", Applied Physics Letters, September 2010, Vol. 97, p.093304

However, the slot waveguide of the optical control device disclosed in Non-Patent Document 1 has a narrow slot width such as 75 nm. Since the slot waveguide has a narrow slot width, when a polling electric field is applied to the electro-optic polymer material to orient the electro-optic polymer material, a leak current is generated between the side walls on both sides of the slot to generate a high polling electric field. Cannot be applied to optical polymer materials. Therefore, the electro-optical polymer material is not sufficiently oriented, and it is difficult to increase the second-order nonlinear susceptibility of the electro-optical polymer layer.

Further, since the slot waveguide has a narrow slot width, it is difficult to fabricate a slot waveguide having little fluctuation in the slot width. Therefore, the slot waveguide has a high optical loss. Further, in the slot waveguide, the slot width is narrow and the slot width fluctuates. Therefore, when a polling electric field is applied to the electro-optical polymer material, a leak current is locally generated in the portion where the slot width is locally narrowed. It is easy to occur. Therefore, it is difficult to uniformly orient the electro-optical polymer material in the slot. It is difficult to manufacture the optical control device disclosed in Non-Patent Document 1 with a high yield.

The present invention has been made in view of the above problems, and an object of the present invention is an optical control device including an optical resin layer having a large second-order nonlinear sensitivity, and having a low light loss and a high yield, and an optical control device thereof. To provide a manufacturing method. Another object of the present invention is to provide an optical integrated circuit and an electromagnetic wave detection device including the above optical control device.

The optical control device of one aspect of the present invention includes a substrate having a main surface, a waveguide, an optical resin layer, a first electrode, and a second electrode. The waveguide is formed on the main surface and includes a one-dimensional photonic crystal part. The optical resin layer is formed on the main surface and covers the one-dimensional photonic crystal portion. The first electrode and the second electrode are formed on the main surface. The first electrode and the second electrode are optical resins in a second direction that intersects the first direction in which the one-dimensional photonic crystal portion extends and the third direction parallel to the normal of the main surface. It is arranged so as to sandwich at least a part of the layer and the one-dimensional photonic crystal portion. The optical resin layer has the maximum second-order nonlinear susceptibility in the second direction. The first thermo-optical coefficient of the one-dimensional photonic crystal portion is compensated by the second thermo-optical coefficient of the optical resin layer.

The optical control device of one aspect of the present invention includes a substrate having a main surface, a waveguide, an optical resin layer, a first electrode, and a second electrode. The waveguide is formed on the main surface and includes a one-dimensional photonic crystal part. The optical resin layer is formed on the main surface and covers the one-dimensional photonic crystal portion. The first electrode and the second electrode are formed on the main surface. The first electrode and the second electrode are optical resins in a second direction that intersects the first direction in which the one-dimensional photonic crystal portion extends and the third direction parallel to the normal of the main surface. It is arranged so as to sandwich at least a part of the layer and the one-dimensional photonic crystal portion. The optical resin layer has the maximum second-order nonlinear susceptibility in the second direction. The one-dimensional photonic crystal portion includes a first one-dimensional photonic crystal portion. The first periodic structure of the first one-dimensional photonic crystal portion gradually changes as it moves away from the center of the first one-dimensional photonic crystal portion in the first direction.

The optical integrated circuit of one aspect of the present invention includes the above-mentioned optical control device. The electromagnetic wave detection device of one aspect of the present invention includes the above-mentioned optical control device.

A method for manufacturing an optical control device according to one aspect of the present invention is to form a waveguide including a one-dimensional photonic crystal portion on a main surface of a substrate, and to form a first electrode and a second electrode. And. The first electrode and the second electrode are one-dimensional photo in the second direction intersecting the first direction in which the one-dimensional photonic crystal portion extends and the third direction parallel to the normal of the main surface. It is arranged so as to sandwich the nick crystal part. The method for manufacturing an optical control device of the present invention further comprises forming an optical resin layer. Forming the optical resin layer includes selectively providing an optical resin material having a second-order nonlinear susceptibility between the first electrode and the second electrode by an inkjet method. The optical resin layer covers the one-dimensional photonic crystal portion. The method for manufacturing an optical control device of the present invention further comprises applying a voltage between the first electrode and the second electrode to orient the optical resin material in the second direction.

The optical control device of one aspect of the present invention has a structure capable of increasing the secondary nonlinear susceptibility of the optical resin layer. The optical control device of one aspect of the present invention has a structure capable of reducing the optical loss in the optical control device and increasing the yield of the optical control device. According to the optical control device of the present invention, an optical control device including an optical resin layer having a large second-order nonlinear susceptibility and having a low optical loss and a high yield can be provided.

The optical integrated circuit of one aspect of the present invention includes an optical resin layer having a large second-order nonlinear susceptibility, and includes an optical control device having a low optical loss and a high yield. The electromagnetic wave detection device of one aspect of the present invention includes an optical resin layer having a large second-order nonlinear sensitivity, and includes an optical control device having a low light loss and a high yield.

The method for manufacturing an optical control device according to one aspect of the present invention can increase the secondary nonlinear susceptibility of the optical resin layer. The method for manufacturing an optical control device according to one aspect of the present invention can reduce the optical loss in the optical control device and increase the yield of the optical control device. According to the method for manufacturing an optical control device of the present invention, an optical control device including an optical resin layer having a large second-order nonlinear sensitivity and having a low light loss and a high yield can be manufactured.

It is a schematic plan view of the optical control device which concerns on Embodiment 1 of this invention. FIG. 5 is a schematic partially enlarged plan view of region II shown in FIGS. 1 and 25 of the optical control device according to the first embodiment and the electromagnetic wave detection device according to the sixth embodiment of the present invention. FIG. 5 is a schematic partially enlarged plan view of the optical control device according to the first embodiment and the electromagnetic wave detection device according to the sixth embodiment in the cross-sectional lines III-III shown in FIGS. 1 and 25. It is a figure which shows the graph which shows the voltage dependence of the transmission wavelength spectrum of the optical control device which concerns on Embodiment 1 of this invention. It is a figure which shows the temperature dependence of the transmission peak wavelength of the optical control device which concerns on Embodiment 1 of this invention, and the optical control device of a comparative example. It is a schematic plan view which shows one step of the manufacturing method of the optical control device which concerns on Embodiment 1 of this invention. It is a schematic partial enlarged sectional view in the sectional line VII-VII shown in FIG. 6 of one step of the manufacturing method of the optical control device which concerns on Embodiment 1 of this invention. FIG. 5 is a schematic plan view showing the next step of the steps shown in FIGS. 6 and 7 in the method for manufacturing an optical control device according to the first embodiment of the present invention. FIG. 5 is a schematic partially enlarged cross-sectional view taken along the cross-sectional line IX-IX shown in FIG. 8 of one step of the method for manufacturing an optical control device according to the first embodiment of the present invention. FIG. 5 is a schematic plan view showing the next step of the steps shown in FIGS. 8 and 9 in the method for manufacturing an optical control device according to the first embodiment of the present invention. It is a schematic partial enlarged sectional view in the sectional line XI-XI shown in FIG. 10 of one step of the manufacturing method of the optical control device which concerns on Embodiment 1 of this invention. FIG. 5 is a schematic plan view showing the next step of the steps shown in FIGS. 10 and 11 in the method for manufacturing an optical control device according to the first embodiment of the present invention. It is a schematic partial enlarged sectional view in sectional line XIII-XIII shown in FIG. 12 of one step of the manufacturing method of the optical control device which concerns on Embodiment 1 of this invention. FIG. 5 is a schematic partially enlarged cross-sectional view showing the next step of the steps shown in FIGS. 12 and 13 in the method for manufacturing an optical control device according to the first embodiment of the present invention. It is a schematic plan view of the optical integrated circuit which concerns on Embodiment 1 of this invention. It is a schematic plan view of the optical integrated circuit which concerns on Embodiment 2 of this invention. It is a schematic plan view which shows one step of the manufacturing method of the optical integrated circuit which concerns on Embodiment 2 of this invention. It is a schematic plan view of the optical control device which concerns on Embodiment 3 of this invention. FIG. 5 is a schematic partial enlarged plan view of a region XIX shown in FIGS. 18 and 21 of the optical control device according to the third and fourth embodiments of the present invention. FIG. 5 is a schematic partial enlarged plan view of the optical control device according to the third and fourth embodiments of the present invention in the cross-sectional lines XX-XX shown in FIGS. 18 and 21. It is a schematic plan view of the optical control device which concerns on Embodiment 4 of this invention. It is a schematic plan view of the optical control device which concerns on Embodiment 5 of this invention. FIG. 5 is a schematic partial enlarged plan view of region XXIII shown in FIGS. 22 and 26 of the optical control device according to the fifth embodiment of the present invention and the electromagnetic wave detection device according to the modified example of the sixth embodiment. FIG. 5 is a schematic partially enlarged cross-sectional view taken along the cross-sectional line XXIV-XXIV shown in FIGS. 22 and 26 of the optical control device according to the fifth embodiment of the present invention and the electromagnetic wave detection device according to the modified example of the sixth embodiment. It is a schematic plan view of the electromagnetic wave detection device which concerns on Embodiment 6 of this invention. It is a schematic plan view of the electromagnetic wave detection device which concerns on the modification of Embodiment 6 of this invention.

Hereinafter, embodiments of the present invention will be described. The same reference number will be assigned to the same configuration, and the description will not be repeated.

(Embodiment 1)
The optical control device 1 according to the first embodiment will be described with reference to FIGS. 1 to 3. The optical control device 1 of the present embodiment includes a substrate 6, a waveguide 12 including a one-dimensional photonic crystal portion 15, an optical resin layer 30, a first electrode 27, and a second electrode 28. .. The optical control device 1 of the present embodiment may further include a first base layer 23 and a second base layer 24.

The substrate 6 has a main surface 7. The substrate 6 is not particularly limited, but may include a _{silicon dioxide (SiO 2) layer.} This silicon dioxide layer may have a main surface 7. The thickness of the silicon dioxide layer is not particularly limited, but may be, for example, 2 μm or more, or 3 μm or more.

The waveguide 12 extends in the first direction (for example, the x direction). The waveguide 12 is formed on the main surface 7. The waveguide 12 is not particularly limited, but may be a semiconductor waveguide such as a silicon (Si) waveguide. The waveguide 12 may be formed by patterning the silicon layer (8) (see FIG. 7) contained in the silicon on insulator (SOI) wafer.

With reference to FIG. 2, the one-dimensional photonic crystal portion 15 extends in the first direction (for example, the x direction). The one-dimensional photonic crystal portion 15 includes a plurality of island-shaped regions arranged in the first direction with a gap. The plurality of island-shaped regions are arranged at a first pitch P along the first direction. The first pitch P is not particularly limited, but may be, for example, 200 nm or more, or 300 nm or more. The first pitch P is not particularly limited, but may be, for example, 600 nm or less, or 450 nm or less. The plurality of island-shaped regions are not particularly limited, but may be composed of a semiconductor material such as silicon (Si).

The one-dimensional photonic crystal portion 15 may be configured so as not to shield the voltage applied between the first electrode 27 and the second electrode 28. The electric field between the first electrode 27 and the second electrode 28 can be applied to the optical resin layer 30 without being shielded by the plurality of island-shaped regions. Specifically, each of the plurality of island-shaped regions is a rectangle having a pair of sides parallel to a second direction (for example, the y direction) in which the first electrode 27 and the second electrode 28 are separated from each other. May have the shape of.

Each of the plurality of island-shaped regions may have a first width. The first width is defined as the length of each of the plurality of island regions in the first direction. The first width of the first island-like region located at the center of the one-dimensional photonic crystal portion 15 in the first direction _{is defined as W 1} (0). The first width of the island-shaped region separated from the first island-shaped region by i times the first pitch P in the + x direction _{is defined as W 1} (i). The first width of the island region farthest from the first island region in the + x direction is defined as _{W 1} ( _imax). The first width of the island region, which is i times the first pitch P in the −x direction from the first island region, _{is defined as W 1} (−i). The first width of the island region farthest from the first island region in the −x direction is defined as _{W 1} (−i _max). The first width W ₁ (i) (i = -i _max , ..., 0, ..., I _max ) is not particularly limited, but may be, for example, 100 nm or more, or 150 nm or more. You may. The first width W ₁ (i) (i = -i _max , ..., 0, ..., I _max ) is not particularly limited, but may be, for example, 400 nm or less, or 300 nm or less. You may.

The one-dimensional photonic crystal portion 15 includes a first one-dimensional photonic crystal portion (15). In the present embodiment, the one-dimensional photonic crystal portion 15 is composed of only the first one-dimensional photonic crystal portion (15). The first one-dimensional photonic crystal portion (15) includes a plurality of island-like regions arranged in the first direction with a gap. The first periodic structure of the first one-dimensional photonic crystal portion (15) gradually changes as it moves away from the center of the first one-dimensional photonic crystal portion (15) in the first direction. _{At least one of the first width W 1} (i) of each of the plurality of island regions in the first direction and the second width of each of the gaps in the first direction is the first width in the first direction. It gradually changes as it moves away from the center of the one-dimensional photonic crystal portion (15).

Specifically, the proportion of one of the plurality of island regions contained within the first pitch P gradually increases as it moves away from the center of the first one-dimensional photonic crystal portion (15) in the first direction. You may. _{The first width W 1} (i) of one of the plurality of island-shaped regions contained in the first pitch P increases as the distance from the center of the first one-dimensional photonic crystal portion (15) in the first direction increases. It may increase gradually. The second width of one of the plurality of gaps contained in the first pitch P may gradually decrease as it moves away from the center of the first one-dimensional photonic crystal portion (15) in the first direction. ..

More specifically, one of the plurality of island-shaped regions is N times the first pitch P away from the first island-shaped region located at the center of the first one-dimensional photonic crystal portion (15). _{Then, one first width W 1} (i) of the plurality of island-shaped regions may increase in proportion to the square of N. That is, the first width W ₁ (i) may be given by the following formula (I).

W ₁ (0) is not particularly limited, but may be 0.25P or more, or 0.6P or less. W ₁ (i _max ) and W ₁ (-i _max ), which are not particularly limited, may be 0.3 P or more, and may be 0.8 P or less. _imax is not particularly limited, but may be 2 or more, 5 or more, 10 or more, 20 or more, or 30 or more.

In the present embodiment, the one-dimensional photonic crystal portion 15 is within the photonic band gap (PBG) of the one-dimensional photonic crystal structure (15, 30) composed of the one-dimensional photonic crystal portion 15 and the optical resin layer 30. It is configured so that a resonance mode is formed in. Only light coupled to this resonant mode can propagate the one-dimensional photonic crystal structure (15, 30). The light coupled to the resonance mode in the photonic band gap (PBG) of the one-dimensional photonic crystal structure (15, 30) strongly interacts with the optical resin layer 30 covering the one-dimensional photonic crystal portion 15. The interaction between the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 covering the one-dimensional photonic crystal portion 15 can be enhanced. The one-dimensional photonic crystal structure (15, 30) is not particularly limited, but may have a Q value of 500 or more, may have a Q value of 1,000 or more, and may have a Q value of 10,000 or more. It may have a value, may have a Q value of 40,000 or more, and may have a Q value of 80,000 or more.

Each of the plurality of island-shaped regions included in the one-dimensional photonic crystal portion 15 has a _{third width W 3 in the second direction (for example, the y direction).} The third width W ₃ is not particularly limited, but may be, for example, 250 nm or more, or 450 nm or more. The third width W ₃ is not particularly limited, but may be, for example, 1000 nm or less, or 650 nm or less.

The waveguide 12 may include a first tapered waveguide 17 and a second tapered waveguide 18 at both ends thereof. The first tapered waveguide 17 may be covered with a first layer 20. The second tapered waveguide 18 may be covered with a second layer 21. In a cross section perpendicular to the first direction in which the waveguide 12 extends (for example, the yz plane), the first layer 20 and the second layer 21 have a larger cross-sectional area than the waveguide 12. There is. The first tapered waveguide 17 and the first layer 20 constitute a first spot size converter (17, 20). The first spot size converter (17, 20) can efficiently couple the light output from the optical fiber (not shown) to the waveguide 12 having a cross-sectional area smaller than that of the optical fiber. it can. The second tapered waveguide 18 and the second layer 21 form a second spot size transducer (18, 21). The second spot size converter (18, 21) can efficiently couple the light output from the waveguide 12 to an optical fiber (not shown) having a cross-sectional area larger than that of the waveguide 12. it can. The first layer 20 and the second layer 21 are not particularly limited, but may be a resin layer.

The optical resin layer 30 covers the one-dimensional photonic crystal portion 15. The optical resin layer 30 fills the gap contained in the one-dimensional photonic crystal portion 15. The optical resin layer 30 is filled between the first electrode 27 and the second electrode 28. The optical resin layer 30 contains an optical resin material. Specifically, the optical resin material has a second-order nonlinear susceptibility. The optical resin material may be an electro-optical polymer, and the optical resin layer 30 may be an electro-optical polymer layer. The optical resin material having a second-order nonlinear susceptibility is not particularly limited, but may include a π-conjugated chromophore containing either or both of an electron donor group and an electron acceptor group. An example of this chromophore is represented by the following formula (II).

In formula (II), O represents an oxygen atom and TBDMS represents a tert-butyldimethylsilyl group.

The optical resin material may be dispersed in the host material. Dispersing the optical resin material in the host material can prevent the optical resin material from aggregating. The optical resin material may be bonded to the side chain or main chain of the host material. The host material is not particularly limited, but may be a transparent resin such as polymethylmethacrylate (PMMA) or amorphous polycarbonate.

The optical resin layer 30 has a second direction (for example, the z direction) that intersects the first direction in which the one-dimensional photonic crystal portion 15 extends and the third direction parallel to the normal of the main surface 7. For example, it has the maximum quadratic non-linear sensitivity in the y direction). The optical resin material may be oriented in the second direction. The chromophore contained in the optical resin material may be oriented in the second direction. The optical resin layer 30 may be an electro-optical resin material having the maximum primary electro-optical constant in the second direction. The optical resin layer 30 may have a primary electro-optical constant greater than 40 pm / V in the second direction. For example, the optical resin layer 30 containing the optical resin material containing the chromophore represented by the formula (I) has a primary electro-optical constant larger than 50 pm / V. The optical resin layer 30 may have a primary electro-optical constant larger than the primary electro-optical constant (32 pm / V) of _{lithium niobate (LiNbO 3).} An optical resin material having a second-order nonlinear susceptibility is suitable for realizing an optical control device having higher performance than an inorganic material. The optical resin layer 30 having a second-order nonlinear susceptibility is suitable for realizing an optical control device having higher performance than the inorganic material layer.

The first electrode 27 is formed on the main surface 7. In the present specification, the fact that the first electrode 27 is formed on the main surface 7 means that the first electrode 27 is in direct contact with the main surface 7, and that the first electrode 27 and the main surface 7 are in direct contact with each other. It is included that the first base layer 23 is interposed between the two. In the present embodiment, the first base layer 23 is interposed between the first electrode 27 and the main surface 7. The first base layer 23 may be made of a conductive material or an insulating material. The first base layer 23 made of the insulating material can further reduce the loss of light propagating through the one-dimensional photonic crystal portion 15. The first base layer 23 may be made of the same material as the waveguide 12. The first base layer 23 is not particularly limited, but may be made of a semiconductor material such as silicon (Si). The first electrode 27 is not particularly limited, but may be made of a conductive material such as gold (Au). The first electrode 27 is not particularly limited, but may be a traveling wave electrode.

The second electrode 28 is formed on the main surface 7. In the present specification, the fact that the second electrode 28 is formed on the main surface 7 means that the second electrode 28 is in direct contact with the main surface 7, and that the second electrode 28 and the main surface 7 are in contact with each other. A second base layer 24 is interposed between the two. In the present embodiment, the second base layer 24 is interposed between the second electrode 28 and the main surface 7. The second base layer 24 may be made of a conductive material or an insulating material. The second base layer 24 made of the insulating material can further reduce the loss of light propagating through the one-dimensional photonic crystal portion 15. The second base layer 24 may be made of the same material as the waveguide 12. The second base layer 24 is not particularly limited, but may be made of a semiconductor material such as silicon (Si). The second electrode 28 is not particularly limited, but may be made of a conductive material such as gold (Au). The second electrode 28 is not particularly limited, but may be a traveling wave electrode.

As shown in FIG. 1, the first electrode 27 and the second electrode 28 have a length L along the first direction (for example, the x direction) in which the one-dimensional photonic crystal portion 15 extends. Have. The length L of the first electrode 27 and the second electrode 28 is not particularly limited, but may be 10 μm or more, or 100 μm or more. The length L of the first electrode 27 and the second electrode 28 is not particularly limited, but may be 3 mm or less, or may be 1 mm or less.

The first electrode 27 and the second electrode 28 are arranged so as to sandwich at least a part of the optical resin layer 30 and the one-dimensional photonic crystal portion 15 in the second direction. As shown in FIG. 3, the second electrode 28 is separated from the first electrode 27 by the electrode spacing G in the second direction (for example, the y direction). The electrode spacing G between the first electrode 27 and the second electrode 28 is not particularly limited, but may be 1.0 μm or more, 2.0 μm or more, or 3.0 μm or more. There may be. The electrode spacing G between the first electrode 27 and the second electrode 28 may be larger than 10 times the slot width (75 nm) of the slot waveguide disclosed in Non-Patent Document 1. The electrode spacing G between the first electrode 27 and the second electrode 28 is not particularly limited, but may be 10 μm or less, or 5.0 μm or less. When the first base layer 23 and the second base layer 24 have conductivity, the electrode spacing G is the first electrode portion composed of the first electrode 27 and the first base layer 23, and the second electrode. It can be defined as the shortest distance between the second electrode portion consisting of 28 and the second base layer 24.

The operation of the optical control device 1 of the present embodiment will be described. Light is input to the optical control device 1 from an optical fiber (not shown). The light may have a TE mode. The first spot size converter (17, 20) reduces the size of the light and outputs it to the waveguide 12. The light is input to the waveguide 12 including the one-dimensional photonic crystal portion 15. The one-dimensional photonic crystal portion 15 includes a first one-dimensional photonic crystal portion (15).

A voltage is applied between the first electrode 27 and the second electrode 28. By changing the voltage applied between the first electrode 27 and the second electrode 28, the refractive index of the optical resin layer 30 changes. Therefore, the frequency or wavelength of the resonance mode in the photonic band gap (PBG) of the one-dimensional photonic crystal structure (15, 30) changes. By changing the voltage applied between the first electrode 27 and the second electrode 28, the frequency or wavelength of the light transmitted through the one-dimensional photonic crystal structure (15, 30) can be changed. Thus, as shown in FIG. 4, the frequency or wavelength of the light transmitted through the optical control device 1 is changed by changing the voltage applied between the first electrode 27 and the second electrode 28. obtain.

For example, the optical control device 1 may be an optical modulator that modulates the intensity of light incident on the optical control device 1. When light having one wavelength is incident on the optical control device 1, as shown in FIG. 4, the voltage applied between the first electrode 27 and the second electrode 28 is changed by changing the voltage applied. The intensity of the light transmitted through the optical control device 1 can change. The optical control device 1 can modulate the intensity of the light output from the optical control device 1 only by changing the voltage applied between the first electrode 27 and the second electrode 28 by about 10 mV. .. According to the optical control device 1 of the present embodiment, an optical modulator having a low operating voltage can be realized.

The optical control device 1 may be a tunable wavelength filter that changes the wavelength of light transmitted through the optical control device 1. When wavelength division multiplexing light is incident on the optical control device 1, as shown in FIG. 4, the optical control device is changed by changing the voltage applied between the first electrode 27 and the second electrode 28. The wavelength of the light transmitted through 1 can change. Since the one-dimensional photonic crystal structure (15, 30) has a high Q value, the optical control device 1 has a high wavelength selection characteristic. As shown in FIG. 4, the optical control device 1 may have a narrow spectral half width, such as less than 20 pm. The optical control device 1 can change the wavelength of the light transmitted through the optical control device 1 only by changing the voltage applied between the first electrode 27 and the second electrode 28 by about 10 mV. According to the optical control device 1 of the present embodiment, a variable wavelength filter having a low operating voltage can be realized.

The light propagating in the waveguide 12 including the one-dimensional photonic crystal portion 15 is output to the second spot size converter (18, 21). The second spot size converter (18, 21) increases the size of the light and outputs the light to the outside of the optical control device 1. In this way, by changing the voltage applied to the first electrode 27 and the second electrode, the optical control device 1 has the state of light output from the optical control device 1 (light intensity, light wavelength, etc.). Can be changed.

The optical control device 1 of the present embodiment is an electro-optical device that utilizes the electro-optical effect of the optical resin layer 30 having a second-order nonlinear sensitivity. In the optical control device 1 of the present embodiment, the light is controlled by utilizing the electro-optical effect of the optical resin layer 30 having the second-order nonlinear susceptibility. The electro-optical effect of the optical resin layer 30 has a higher response rate than the carrier plasma effect that can occur in the silicon (Si) layer.

The first thermo-optical coefficient of the one-dimensional photonic crystal portion 15 is compensated by the second thermo-optical coefficient of the optical resin layer 30. In the present specification, the fact that the first thermo-optical coefficient of the one-dimensional photonic crystal portion 15 is compensated by the second thermo-optical coefficient of the optical resin layer 30 means that the one-dimensional photonic crystal portion 15 and the optical resin layer It means that the thermo-optical coefficient of the optically active medium consisting of 30 is less than half of the first thermo-optical coefficient of the one-dimensional photonic crystal portion 15. The thermo-optical coefficient of the optically active medium composed of the one-dimensional photonic crystal portion 15 and the optical resin layer 30 may be less than one-fourth of the first thermo-optical coefficient of the one-dimensional photonic crystal portion 15. .. The thermo-optical coefficient of the optically active medium composed of the one-dimensional photonic crystal portion 15 and the optical resin layer 30 may be less than one-eighth of the first thermo-optical coefficient of the one-dimensional photonic crystal portion 15. .. In one embodiment of this embodiment, the one-dimensional photonic crystal portion 15 may ^{have a first thermo-optical coefficient of 2.0 × 10 -4} (/ ° C), and the optical resin layer 30 may have a first thermo-optical coefficient. It may have a second thermo-optical coefficient of -1.8 x 10 ^{-4 (/ ° C).}

The optical control device 1 of the present embodiment is a temperature-independent optical control device 1. In the present specification, in the temperature-independent optical control device 1, the temperature change of the output of the optical control device 1 including the optical resin layer 30 is the temperature change of the output of the optical control device of the comparative example not including the optical resin layer 30. Means less than half of. The temperature change in the output of the temperature-independent optical control device 1 may be less than one-fourth of the temperature change in the output of the optical control device of the comparative example that does not include the optical resin layer 30. The temperature change in the output of the temperature-independent optical control device 1 may be less than one-eighth of the temperature change in the output of the optical control device of the comparative example that does not include the optical resin layer 30. As shown in FIG. 5, the temperature change of the transmission peak wavelength of the optical control device 1 of the present embodiment is reduced to less than 30% of the temperature change of the transmission peak wavelength of the optical control device of the comparative example.

The manufacturing method of the optical control device 1 of the present embodiment will be described with reference to FIGS. 1 to 3 and 6 to 14.

As shown in FIGS. 6 to 9, in the method of manufacturing the optical control device 1 of the present embodiment, a waveguide 12 including a one-dimensional photonic crystal portion 15 is formed on the main surface 7 of the substrate 6. To be equipped. Specifically, as shown in FIGS. 6 and 7, a patterned resist layer 33 is formed on the waveguide material layer 8 provided on the main surface 7 of the substrate 6. For example, the waveguide material layer 8 may be a silicon (Si) layer, and the substrate 6 and the waveguide material layer 8 may form an SOI wafer. Forming the patterned resist layer 33 may include forming the resist layer 33 on the waveguide material layer 8 and patterning the resist layer 33. The patterning of the resist layer 33 is not particularly limited, but the resist layer 33 may be etched or the resist layer 33 may be imprinted.

As shown in FIGS. 8 and 9, by patterning the waveguide material layer 8 with the patterned resist layer 33, the waveguide 12 including the one-dimensional photonic crystal portion 15 is formed. The waveguide material layer 8 may be patterned by dry etching or the like. By patterning the waveguide material layer 8, the first base layer 23 and the second base layer 24 may be further formed.

In the method for manufacturing the optical control device 1 of the present embodiment, the one-dimensional photonic crystal portion 15 may include the first one-dimensional photonic crystal portion (15). Forming the waveguide 12 including the one-dimensional photonic crystal portion 15 means that the first periodic structure of the first one-dimensional photonic crystal portion (15) is the first one-dimensional photonic crystal in the first direction. It may include forming a first one-dimensional photonic crystal portion (15) such that it gradually changes as it moves away from the center of the portion (15). Specifically, forming the waveguide 12 including the one-dimensional photonic crystal portion 15 means that one of the plurality of island-shaped regions is located at the center of the first one-dimensional photonic crystal portion (15). A first one-dimensional photo so that when one island region is N times the first pitch P, the first width of one of the plurality of island regions increases in proportion to the square of N. It may include forming a nick crystal portion (15).

As shown in FIGS. 10 and 11, the method of manufacturing the optical control device 1 of the present embodiment includes forming the first electrode 27 and the second electrode 28 on the main surface 7. For example, the first electrode 27 and the second electrode 28 may be formed by depositing a conductive material such as gold (Au) on the main surface 7. For example, the first electrode 27 and the second electrode 28 are formed by depositing a conductive material such as gold (Au) on the first base layer 23 and the second base layer 24, respectively. May be good.

The first electrode 27 and the second electrode 28 have a first direction in which the one-dimensional photonic crystal portion 15 extends (for example, the x direction) and a third direction parallel to the normal of the main surface 7 (for example). , Z direction) and is arranged so as to sandwich the one-dimensional photonic crystal portion 15 in the second direction (for example, the y direction). The electrode spacing G (see FIG. 3) between the first electrode 27 and the second electrode 28 is not particularly limited, but may be 1.0 μm or more, or 2.0 μm or more. , 3.0 μm or more. The electrode spacing G between the first electrode 27 and the second electrode 28 may be larger than 10 times the slot width (75 nm) of the slot waveguide disclosed in Non-Patent Document 1. The electrode spacing G between the first electrode 27 and the second electrode 28 is not particularly limited, but may be 10 μm or less, or 5.0 μm or less.

As shown in FIGS. 12 and 13, the method for manufacturing the optical control device 1 of the present embodiment includes forming an optical resin layer 30. Forming the optical resin layer 30 may include selectively providing an optical resin material having a second-order nonlinear susceptibility between the first electrode 27 and the second electrode 28 by an inkjet method. .. The optical resin material may be dispersed in a solvent. The liquid 35 containing the optical resin material may be selectively dropped from the nozzle 34 between the first electrode 27 and the second electrode 28 by an inkjet method. The optical resin layer 30 covers the one-dimensional photonic crystal portion 15. The optical resin layer 30 fills the gap contained in the one-dimensional photonic crystal portion 15. Forming the optical resin layer 30 may include evaporating the solvent in which the optical resin material is dispersed. Specifically, the solvent may be evaporated by heat-treating the liquid 35 containing the optical resin material dropped between the first electrode 27 and the second electrode 28 using the heater 37.

As shown in FIG. 14, in the method of manufacturing the optical control device 1 of the present embodiment, a polling voltage is applied between the first electrode 27 and the second electrode 28 to obtain a second optical resin material. It is provided to be oriented in the direction of. Specifically, first, the optical resin layer 30 is heated by using the heater 39. For example, when the optical resin layer 30 contains an optical resin material and a host material in which the optical resin material is dispersed, the optical resin layer 30 is heated so as to have a temperature of _{(T g-60) ° C. or higher.} You may. T _g represents the glass transition temperature of the host material. Specifically, the optical resin layer 30 may be heated so as to have a temperature of _{(T g-40) ° C. or higher.} More specifically, the optical resin layer 30 may be heated to have a temperature of _{(T g-20) ° C. or higher.} Next, while the optical resin layer 30 is being heated, the first electrode 27 and the second electrode 28 are connected to the power supply 38, and a polling voltage is generated between the first electrode 27 and the second electrode 28. It is applied. Finally, while the polling voltage is applied between the first electrode 27 and the second electrode 28, the heating of the optical resin layer 30 by the heater 39 is stopped, and the temperature of the optical resin layer 30 is lowered to room temperature. .. In this way, the optical resin material is oriented in the second direction, and the optical resin layer 30 having the maximum quadratic nonlinear susceptibility in the second direction (for example, the y direction) is obtained.

The method for manufacturing the optical control device 1 of the present embodiment may include forming the first layer 20 and the second layer 21. The first layer 20 and the second layer 21 may be formed after the optical resin material is oriented in the second direction. The first layer 20 and the second layer 21 may be formed by using the inkjet method when the liquid 35 containing the optical resin material is dropped by the inkjet method. In this way, the optical control device 1 of the present embodiment is obtained.

With reference to FIG. 15, the optical control device 1 of the present embodiment may further include a drive circuit unit 40 on the main surface 7. The drive circuit unit 40 is configured to control the optical control device 1. The drive circuit unit 40 generates an electric signal for operating the optical control device 1. The drive circuit unit 40 may be, for example, a silicon (Si) -based LSI. The optical control device 1 of the present embodiment may further include a first electrical wiring 41. The optical control device 1 may be connected to the drive circuit unit 40 via the first electrical wiring 41. A plurality of optical control devices 1 may be arranged in an array on the main surface 7. Any of the optical control devices 1b, 1c, and 1f according to the third to fifth embodiments may further include a drive circuit unit 40 on the main surface 7.

The optical integrated circuit 2 according to the first embodiment will be described with reference to FIG. The optical integrated circuit 2 of the present embodiment includes an optical control device 1 and a light emitting unit 42 formed on the main surface 7. The optical integrated circuit 2 of the present embodiment may further include a first optical wiring 43, a second electrical wiring 44, a combiner 45, and a second optical wiring 46.

The light emitting unit 42 is optically coupled to the optical control device 1. Specifically, the light emitting unit 42 may be optically coupled to the optical control device 1 via the first optical wiring 43. The drive circuit unit 40 may be configured to control the light emitting unit 42. The drive circuit unit 40 generates an electric signal for operating the light emitting unit 42. The light emitting unit 42 may be connected to the drive circuit unit 40 via the second electric wiring 44. The light emitting unit 42 is not particularly limited, but may be a semiconductor laser. A plurality of light emitting units 42 may be arranged in an array on the main surface 7. The light emitting unit 42 outputs light based on the electric signal output from the drive circuit unit 40.

The light output from the light emitting unit 42 is input to the optical control device 1 through the first optical wiring 43. The optical control device 1 controls a state of light (intensity of light, wavelength of light, etc.). The optical integrated circuit 2 may further include a combiner 45 and a second optical wiring 46. The light output from the optical control device 1 is output to the first optical fiber 47 through the combiner 45 and the second optical wiring 46.

The optical integrated circuit 2 of the present embodiment includes a third optical wiring 52, a demultiplexer 53, a fourth optical wiring 54, a light receiving unit 55, a third electrical wiring 56, and a receiving circuit unit 57. And may be further provided. The light output from the second optical fiber 51 is input to the light receiving unit 55 through the third optical wiring 52, the demultiplexer 53, and the fourth optical wiring 54. The light receiving unit 55 is not particularly limited, but may be a photodiode. A plurality of light receiving units 55 may be arranged in an array on the main surface 7. The light receiving unit 55 converts the optical signal input to the light receiving unit 55 into an electric signal. The electric signal generated by the light receiving unit 55 is output to the receiving circuit unit 57 through the third electric wiring 56. The receiving circuit unit 57 processes the electric signal generated by the light receiving unit 55. The receiving circuit unit 57 may be, for example, a silicon (Si) -based LSI.

When the drive circuit unit 40 and the reception circuit unit 57 operate, the drive circuit unit 40 and the reception circuit unit 57 generate heat. The optical control device 1 of the present embodiment is a temperature-independent optical control device 1. Therefore, even if the optical control device 1 is arranged on the main surface 7 of the substrate 6 together with the drive circuit unit 40 and the reception circuit unit 57, the optical control device 1 is generated by the heat dissipated from the drive circuit unit 40 and the reception circuit unit 57. Changes in the characteristics of the can be suppressed. The optical integrated circuit 2 of the present embodiment may include any of the optical control devices 1b, 1c, and 1f of the third to fifth embodiments instead of the optical control device 1 of the present embodiment. ..

The effects of the optical control device 1 of the present embodiment and the manufacturing method thereof will be described.
The optical control device 1 of the present embodiment includes a substrate 6 having a main surface 7, a waveguide 12, an optical resin layer 30, a first electrode 27, and a second electrode 28. The waveguide 12 is formed on the main surface 7 and includes a one-dimensional photonic crystal portion 15. The optical resin layer 30 is formed on the main surface 7 and covers the one-dimensional photonic crystal portion 15. The first electrode 27 and the second electrode 28 are formed on the main surface 7. The first electrode 27 and the second electrode 28 have a second direction that intersects the first direction in which the one-dimensional photonic crystal portion 15 extends and the third direction parallel to the normal of the main surface 7. Is arranged so as to sandwich at least a part of the optical resin layer 30 and the one-dimensional photonic crystal portion 15. The optical resin layer 30 has the maximum second-order nonlinear susceptibility in the second direction. The first thermo-optical coefficient of the one-dimensional photonic crystal portion 15 is compensated by the second thermo-optical coefficient of the optical resin layer 30.

In the optical control device 1 of the present embodiment, even if the electrode distance G between the first electrode 27 and the second electrode 28 is widened, the light is confined in the one-dimensional photonic crystal portion 15 and its vicinity. Even if the electrode spacing G between the first electrode 27 and the second electrode 28 is widened, the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 covering the one-dimensional photonic crystal portion 15 It can be prevented that the interaction between them is reduced. In the optical control device 1 of the present embodiment, the electrode distance G between the first electrode 27 and the second electrode 28 can be widened.

Therefore, it is possible to prevent the polling electric field from leaking between the first electrode 27 and the second electrode 28. By applying a polling electric field between the first electrode 27 and the second electrode 28, the optical resin material can be sufficiently oriented, and the second-order nonlinear susceptibility of the optical resin layer 30 can be increased. it can. Specifically, the second-order nonlinear susceptibility of the optical resin layer 30 can be maximized to near the second-order nonlinear susceptibility of the bulk made of the optical resin material. The optical control device 1 of the present embodiment includes an optical resin layer having a large second-order nonlinear susceptibility.

In the optical control device 1 of the present embodiment, the electrode distance G between the first electrode 27 and the second electrode 28 can be widened, and the light propagates through the one-dimensional photonic crystal portion 15. Therefore, the light loss in the light control device 1 can be reduced. The optical control device 1 of this embodiment has a low optical loss.

In the optical control device 1 of the present embodiment, since the electrode spacing G between the first electrode 27 and the second electrode 28 can be widened, the fluctuation of the electrode spacing G can be suppressed. Since the polling voltage is uniformly applied to the electro-optical polymer material, the electro-optic polymer material can be uniformly oriented. The optical control device 1 of the present embodiment has a structure capable of increasing the yield of the optical control device 1. According to the optical control device 1 of the present embodiment, an optical control device 1 including an optical resin layer having a large second-order nonlinear susceptibility and having a low optical loss and a high yield can be provided.

In the optical control device 1 of the present embodiment, the interaction between the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 having a second-order nonlinear susceptibility can be enhanced. First, in the optical control device 1 of the present embodiment, even if the electrode distance G between the first electrode 27 and the second electrode 28 is widened, the light propagating through the one-dimensional photonic crystal portion 15 is emitted. It is confined to the one-dimensional photonic crystal portion 15 and its vicinity. Even if the electrode spacing G between the first electrode 27 and the second electrode 28 is widened, the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 covering the one-dimensional photonic crystal portion 15 It can be prevented that the interaction between them is reduced. Further, the second-order nonlinear susceptibility of the optical resin layer 30 can be increased. Secondly, in the optical control device 1 of the present embodiment, only the light coupled to the resonance mode formed in the photonic band gap (PBG) of the one-dimensional photonic crystal structure (15, 30) is one-dimensional. It can propagate through the photonic crystal portion 15. Therefore, the interaction between the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 having a second-order nonlinear susceptibility can be enhanced.

Third, in the optical control device 1 of the present embodiment, the optical resin layer 30 having a second-order nonlinear susceptibility covers the one-dimensional photonic crystal portion 15. The one-dimensional photonic crystal portion 15 can be formed without patterning the optical resin layer 30. By patterning the optical resin layer 30, it is possible to prevent the optical resin material from deteriorating and the secondary nonlinear susceptibility of the optical resin layer 30 from decreasing. Fourth, in the optical control device 1 of the present embodiment, the optical resin layer 30 is adopted as the layer having the second-order nonlinear susceptibility. Resins are more likely to obtain a larger second-order nonlinear susceptibility than inorganic materials. Therefore, the interaction between the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 having a second-order nonlinear susceptibility can be enhanced.

As described above, in the optical control device 1 of the present embodiment, the interaction between the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 having a second-order nonlinear sensitivity can be enhanced. Therefore, even if the size of the optical control device 1 is reduced, the optical control device 1 can sufficiently control the state of light (light intensity, light wavelength, etc.) input to the optical control device 1. According to the optical control device 1 of the present embodiment, the size of the optical control device 1 can be reduced.

The optical control device 1 of the present embodiment includes an optical resin layer 30 having a second-order nonlinear susceptibility. According to the optical control device 1 of the present embodiment, the light can be controlled at a high speed such as exceeding 100 GHz.

In the optical control device 1 of the present embodiment, the first thermo-optical coefficient of the one-dimensional photonic crystal portion 15 is compensated by the second thermo-optical coefficient of the optical resin layer 30. According to the optical control device 1 of the present embodiment, even if the temperature of the optical control device 1 changes, the change in the characteristics of the optical control device 1 can be suppressed.

The optical control device 1 of the present embodiment may further include a drive circuit unit 40 on the main surface 7. The drive circuit unit 40 is configured to control the optical control device 1. When the drive circuit unit 40 operates, the drive circuit unit 40 generates heat. The optical control device 1 of the present embodiment is a temperature-independent optical control device 1. Therefore, even if the optical control device 1 is arranged on the main surface 7 of the substrate 6 together with the drive circuit unit 40, it is possible to suppress the change in the characteristics of the optical control device 1 due to the heat dissipated from the drive circuit unit 40. ..

The optical control device 1 of the present embodiment includes a substrate 6 having a main surface 7, a waveguide 12, an optical resin layer 30, a first electrode 27, and a second electrode 28. The waveguide 12 is formed on the main surface 7 and includes a one-dimensional photonic crystal portion 15. The optical resin layer 30 is formed on the main surface 7 and covers the one-dimensional photonic crystal portion 15. The first electrode 27 and the second electrode 28 are formed on the main surface 7. The first electrode 27 and the second electrode 28 have a second direction that intersects the first direction in which the one-dimensional photonic crystal portion 15 extends and the third direction parallel to the normal of the main surface 7. Is arranged so as to sandwich at least a part of the optical resin layer 30 and the one-dimensional photonic crystal portion 15. The optical resin layer 30 has the maximum second-order nonlinear susceptibility in the second direction. The one-dimensional photonic crystal portion 15 includes a first one-dimensional photonic crystal portion (15). The first periodic structure of the first one-dimensional photonic crystal portion (15) gradually changes as it moves away from the center of the first one-dimensional photonic crystal portion (15) in the first direction.

In the optical control device 1 of the present embodiment, it is coupled to the resonance mode formed in the photonic band gap (PBG) of the one-dimensional photonic crystal structure (15, 30) having such a first periodic structure. Only light can propagate through the first one-dimensional photonic crystal portion (15). Therefore, the interaction between the light propagating in the first one-dimensional photonic crystal portion (15) and the optical resin layer 30 covering the first one-dimensional photonic crystal portion (15) can be enhanced. Even if the size of the optical control device 1 is reduced, the optical control device 1 can sufficiently control the state of light (light intensity, light wavelength, etc.) input to the optical control device 1. According to the optical control device 1 of the present embodiment, the size of the optical control device 1 can be reduced.

In the optical control device 1 of the present embodiment, the first periodic structure of the first one-dimensional photonic crystal portion (15) is the center of the first one-dimensional photonic crystal portion (15) in the first direction. It is gradually changing as we move away from. The one-dimensional photonic crystal structure (15, 30) having such a first periodic structure has a high Q value, so that the optical control device 1 has a narrow spectral half width. According to the optical control device 1 of the present embodiment, the operating voltage of the optical control device 1 can be reduced. Further, according to the optical control device 1 of the present embodiment, the wavelength selection characteristic of the optical control device 1 can be improved.

In the optical control device 1 of the present embodiment, the first one-dimensional photonic crystal portion (15) includes a plurality of island-shaped regions arranged in the first direction with a gap. Each of the plurality of island regions has a first width in the first direction. The plurality of island-shaped regions are formed at a first pitch P along the first direction. When one of the plurality of island-shaped regions is N times the first pitch P away from the first island-shaped region located at the center of the first one-dimensional photonic crystal portion (15), the plurality of island-shaped regions One first width W ₁ (i) of the region increases in proportion to the square of N.

Only the light coupled to the resonance mode formed in the photonic band gap (PBG) of the one-dimensional photonic crystal structure (15, 30) having such a first periodic structure is the first one-dimensional photonic. It can propagate through the crystal portion (15). Therefore, the interaction between the light propagating in the first one-dimensional photonic crystal portion (15) and the optical resin layer 30 covering the first one-dimensional photonic crystal portion (15) can be enhanced. According to the optical control device 1 of the present embodiment, the size of the optical control device 1 can be reduced. Further, the one-dimensional photonic crystal structure (15, 30) having such a first periodic structure has a high Q value, so that the optical control device 1 has a narrow spectral half width. According to the optical control device 1 of the present embodiment, the operating voltage of the optical control device 1 can be reduced. Further, according to the optical control device 1 of the present embodiment, the wavelength selection characteristic of the optical control device 1 can be improved.

The method for manufacturing the optical control device 1 of the present embodiment is to form a waveguide 12 including a one-dimensional photonic crystal portion 15 on the main surface 7 of the substrate 6, and to form a first on the main surface 7. It includes forming an electrode 27 and a second electrode 28. The first electrode 27 and the second electrode 28 have a second direction that intersects the first direction in which the one-dimensional photonic crystal portion 15 extends and the third direction parallel to the normal of the main surface 7. Is arranged so as to sandwich the one-dimensional photonic crystal portion 15. The method for manufacturing the optical control device 1 of the present embodiment further comprises forming an optical resin layer 30. Forming the optical resin layer 30 may include selectively providing an optical resin material having a second-order nonlinear susceptibility between the first electrode 27 and the second electrode 28 by an inkjet method. .. The optical resin layer 30 covers the one-dimensional photonic crystal portion 15. The method for manufacturing the optical control device 1 of the present embodiment further comprises applying a polling voltage between the first electrode 27 and the second electrode 28 to orient the optical resin material in the second direction. Be prepared.

In the optical control device 1 manufactured by the manufacturing method of the optical control device 1 of the present embodiment, even if the electrode distance G between the first electrode 27 and the second electrode 28 is widened, a one-dimensional photonic crystal is formed. The light propagating in the portion 15 is confined in the one-dimensional photonic crystal portion 15 and its vicinity. Even if the electrode spacing G between the first electrode 27 and the second electrode 28 is widened, the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 covering the one-dimensional photonic crystal portion 15 It can be prevented that the interaction between them is reduced. In the method for manufacturing the optical control device 1 of the present embodiment, the electrode distance G between the first electrode 27 and the second electrode 28 can be widened.

Therefore, it is possible to prevent the polling electric field from leaking between the first electrode 27 and the second electrode 28. By applying a polling electric field between the first electrode 27 and the second electrode 28, the optical resin material can be sufficiently oriented, and the second-order nonlinear susceptibility of the optical resin layer 30 can be increased. it can. Specifically, the second-order nonlinear susceptibility of the optical resin layer 30 can be maximized to near the second-order nonlinear susceptibility of the bulk made of the optical resin material. According to the manufacturing method of the optical control device 1 of the present embodiment, it is possible to form an optical resin layer having a large second-order nonlinear susceptibility.

In the optical control device 1 manufactured by the manufacturing method of the optical control device 1 of the present embodiment, the electrode distance G between the first electrode 27 and the second electrode 28 can be widened, and the light is emitted. It propagates through the one-dimensional photonic crystal portion 15. Therefore, the light loss in the light control device 1 can be reduced. According to the method for manufacturing the optical control device 1 of the present embodiment, the optical control device 1 having a low light loss can be manufactured.

In the optical control device 1 manufactured by the manufacturing method of the optical control device 1 of the present embodiment, the electrode spacing G between the first electrode 27 and the second electrode 28 can be widened, so that the electrode spacing G can be increased. Fluctuations can be suppressed. Since the polling voltage is uniformly applied to the electro-optical polymer material, the electro-optic polymer material can be uniformly oriented. The method for manufacturing the optical control device 1 of the present embodiment can increase the yield of the optical control device 1. According to the method for manufacturing the optical control device 1 of the present embodiment, the optical control device 1 including an optical resin layer having a large second-order nonlinear susceptibility and having a low light loss and a high yield can be manufactured.

In the method for manufacturing the optical control device 1 of the present embodiment, the interaction between the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 having a second-order nonlinear susceptibility in the optical control device 1 is exhibited. Can be augmented. First, in the optical control device 1 manufactured by the manufacturing method of the optical control device 1 of the present embodiment, even if the electrode distance G between the first electrode 27 and the second electrode 28 is widened, 1 The light propagating through the one-dimensional photonic crystal portion 15 is confined in the one-dimensional photonic crystal portion 15 and its vicinity. Even if the electrode spacing G between the first electrode 27 and the second electrode 28 is widened, it is possible to prevent the interaction between the light and the optical resin layer 30 covering the one-dimensional photonic crystal portion 15 from being reduced. It can come off. Further, the second-order nonlinear susceptibility of the optical resin layer 30 can be increased. Secondly, in the optical control device 1 manufactured by the manufacturing method of the optical control device 1 of the present embodiment, it is formed in the photonic band gap (PBG) of the one-dimensional photonic crystal structure (15, 30). Only the light coupled to the resonance mode can propagate through the one-dimensional photonic crystal portion 15. Therefore, the interaction between the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 having a second-order nonlinear susceptibility can be enhanced.

Third, in the optical control device 1 manufactured by the manufacturing method of the optical control device 1 of the present embodiment, the optical resin layer 30 having a second-order nonlinear sensitivity covers the one-dimensional photonic crystal portion 15. .. The one-dimensional photonic crystal portion 15 can be formed without patterning the optical resin layer 30. By patterning the optical resin layer 30, it is possible to prevent the optical resin material from deteriorating and the secondary nonlinear susceptibility of the optical resin layer 30 from decreasing. Therefore, it is possible to prevent the interaction between the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 having the second-order nonlinear susceptibility from being reduced. Fourth, in the optical control device 1 manufactured by the manufacturing method of the optical control device 1 of the present embodiment, the optical resin layer 30 is adopted as a layer having a second-order nonlinear susceptibility. Resins are more likely to obtain a larger second-order nonlinear susceptibility than inorganic materials. Therefore, the interaction between the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 having a second-order nonlinear susceptibility can be enhanced.

As described above, according to the manufacturing method of the optical control device 1 of the present embodiment, the interaction between the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 having a second-order nonlinear sensitivity. An optical control device 1 that can be enhanced can be manufactured. Therefore, even if the size of the optical control device 1 is reduced, the optical control device 1 can sufficiently control the state of light (light intensity, light wavelength, etc.) input to the optical control device 1. According to the method for manufacturing the optical control device 1 of the present embodiment, the size of the optical control device 1 can be reduced.

In the method for manufacturing the optical control device 1 of the present embodiment, the optical resin layer 30 is formed by using an inkjet method to obtain an optical resin material having a second-order nonlinear susceptibility with the first electrode 27 and the second electrode. It may be included that it is selectively provided between 28 and 28. According to the method for manufacturing the optical control device 1 of the present embodiment, the amount of the optical resin material used can be significantly reduced, and the manufacturing cost of the optical control device 1 can be reduced.

The method for manufacturing the optical control device 1 of the present embodiment includes forming an optical resin layer 30 having a second-order nonlinear susceptibility. According to the method for manufacturing the optical control device 1 of the present embodiment, the optical control device 1 capable of controlling light at a high speed exceeding, for example, 100 GHz can be manufactured.

In the method for manufacturing the optical control device 1 of the present embodiment, the first thermo-optical coefficient of the one-dimensional photonic crystal portion 15 is compensated by the second thermo-optical coefficient of the optical resin layer 30. According to the method for manufacturing the optical control device 1 of the present embodiment, the temperature-independent optical control device 1 can be manufactured.

In the method for manufacturing the optical control device 1 of the present embodiment, the one-dimensional photonic crystal portion 15 includes the first one-dimensional photonic crystal portion (15). Forming the waveguide 12 including the one-dimensional photonic crystal portion 15 means that the first periodic structure of the first one-dimensional photonic crystal portion (15) is the first one-dimensional photonic crystal in the first direction. It may include forming a first one-dimensional photonic crystal portion (15) that gradually changes as it moves away from the center of the portion (15). Only the light coupled to the resonance mode formed in the photonic band gap (PBG) of the one-dimensional photonic crystal structure (15, 30) having such a first periodic structure is the first one-dimensional photonic. It can propagate through the crystal portion (15). Therefore, the interaction between the light propagating in the first one-dimensional photonic crystal portion (15) and the optical resin layer 30 covering the first one-dimensional photonic crystal portion (15) can be enhanced. According to the method for manufacturing the optical control device 1 of the present embodiment, the size of the optical control device 1 can be reduced.

Further, the one-dimensional photonic crystal structure (15, 30) having such a first periodic structure has a high Q value, so that the optical control device 1 has a narrow spectral half width. According to the method for manufacturing the optical control device 1 of the present embodiment, the optical control device 1 whose operating voltage can be reduced can be manufactured. Further, according to the method for manufacturing the optical control device 1 of the present embodiment, the optical control device 1 capable of improving the wavelength selection characteristic can be manufactured.

The effect of the optical integrated circuit 2 of the present embodiment will be described. The optical integrated circuit 2 of the present embodiment includes the optical control device 1 of the present embodiment and a light emitting unit 42 formed on the main surface 7. The light emitting unit 42 is optically coupled to the optical control device 1. According to the optical integrated circuit 2 of the present embodiment, the optical integrated circuit 2 includes an optical resin layer having a large second-order nonlinear sensitivity, and includes an optical control device 1 having a low optical loss and a high yield. Can be done. Further, in the optical control device 1 of the present embodiment, the interaction between the light propagating in the one-dimensional photonic crystal portion 15 and the optical resin layer 30 having a second-order nonlinear susceptibility can be enhanced. According to the optical integrated circuit 2 of the present embodiment, the size of the optical control device 1 can be reduced, and the size of the optical integrated circuit 2 can also be reduced.

(Embodiment 2)
The optical integrated circuit 2b according to the second embodiment will be described with reference to FIG. The optical integrated circuit 2b of the present embodiment has the same configuration as the optical integrated circuit 2 of the first embodiment and exhibits the same effect, but is mainly different in the following points.

The optical integrated circuit 2b of the present embodiment includes the optical control device 1 of the first embodiment and a light emitting unit 60 formed on the main surface 7. The light emitting unit 60 is optically coupled to the optical control device 1. The waveguide 12 may be covered with a light emitting unit 60. Specifically, the first tapered waveguide 17 may be covered with a light emitting unit 60. The light emitting unit 60 may include, for example, a laser dye or an organic electroluminescence material. The optical integrated circuit 2b of the present embodiment may include any of the optical control devices 1b, 1c, and 1f of the third to fifth embodiments instead of the optical control device 1 of the first embodiment. ..

A method of manufacturing the optical integrated circuit 2b of the present embodiment will be described. The manufacturing method of the optical integrated circuit 2b of the present embodiment includes the same steps as the manufacturing method of the optical control device 1 of the first embodiment, but is mainly different in the following points.

As shown in FIG. 17, the method of manufacturing the optical integrated circuit 2b of the present embodiment includes forming a light emitting unit 60. Forming the light emitting unit 60 includes selectively providing a material constituting the light emitting unit 60 on a part of the main surface 7 by an inkjet method. The material constituting the light emitting unit 60 may be dispersed in a solvent. The liquid containing the material constituting the light emitting unit 60 may be selectively dropped from the nozzle 64 onto a part of the main surface 7 by an inkjet method. Forming the light emitting unit 60 may include evaporating a solvent in which the material constituting the light emitting unit 60 is dispersed. Specifically, even if the solvent is evaporated by heat-treating the liquid containing the material constituting the light emitting portion 60 dropped on a part of the main surface 7 using the heater 37 (see FIG. 12). Good. The light emitting portion 60 may be formed by the inkjet method while the optical resin layer 30 is formed by the inkjet method. According to the method for manufacturing the optical integrated circuit 2b of the present embodiment, the amount of the material used for the light emitting unit 60 can be significantly reduced, and the manufacturing cost of the optical integrated circuit 2b can be reduced.

(Embodiment 3)
The optical control device 1b according to the third embodiment will be described with reference to FIGS. 18 to 20. The optical control device 1b of the present embodiment has the same configuration as the optical control device 1 of the first embodiment, but is mainly different in the following points.

The optical control device 1b of the present embodiment is an optical phase modulator. By changing the voltage applied to the first electrode 27 and the second electrode 28, the phase of the light output from the optical control device 1b can be modulated.

The waveguide 12 includes a one-dimensional photonic crystal portion 15b. The one-dimensional photonic crystal portion 15b includes a first one-dimensional photonic crystal portion (15b). The one-dimensional photonic crystal portion 15b and the first one-dimensional photonic crystal portion (15b) of the present embodiment are the one-dimensional photonic crystal portion 15 and the first one-dimensional photonic crystal of the first embodiment, respectively. The arrangement pattern of the portion (15) and the plurality of island-shaped regions is different. In this embodiment, the plurality of island-shaped regions may have a first width equal to each other. W ₁ (i) (i = -i _max , ...- 1, 1, ..., I _max ) is _{equal to W 1} (0). The plurality of gaps may have a second width equal to each other.

One-dimensional photonic crystal portion 15b is configured to reduce the group velocity v _g of the light propagating through the one-dimensional photonic crystal structure (15b, 30). One-dimensional photonic crystal structure (15b, 30) the group velocity v _g of the propagating light the the slope of the dispersion curve of the one-dimensional photonic crystal structure (15b, 30) ω (k ), i.e., ∂ω (k) Given by / ∂k. ω and k represent the frequency and wave number of light propagating in the one-dimensional photonic crystal structure (15b, 30), respectively. In other words, the one-dimensional photonic crystal portion 15b is configured so that _{the group refractive index ng of the one-dimensional photonic crystal structure (15b, 30) is large.} Specifically, the one-dimensional photonic crystal structure (15b, 30) may have _{a group refractive index of ng of 5 or more.} The one-dimensional photonic crystal structure (15b, 30) may have _{a group refractive index of ng of 10 or more.} One-dimensional photonic crystal structure (15b, 30) may have 20 or more of the group refractive index n _g.

Light slowly propagates through the one-dimensional photonic crystal structure (15b, 30). The light propagating the one-dimensional photonic crystal structure (15b, 30) propagates the one-dimensional photonic crystal structure (15b, 30) as a so-called slow light. The light propagating with the one-dimensional photonic crystal structure (15b, 30) as a slow light strongly interacts with the optical resin layer 30 covering the one-dimensional photonic crystal portion 15b. The interaction between the light propagating in the one-dimensional photonic crystal portion 15b and the optical resin layer 30 covering the one-dimensional photonic crystal portion 15b can be enhanced.

The operation of the optical control device 1b of the present embodiment will be described. Light is input to the optical control device 1b from an optical phi (not shown). The light input to the optical control device 1b may have a TE mode. The first spot size converter (17, 20) reduces the size of the light and outputs the light to the waveguide 12 including the one-dimensional photonic crystal portion 15b.

A voltage is applied between the first electrode 27 and the second electrode 28. By changing the voltage applied between the first electrode 27 and the second electrode 28, the refractive index of the optical resin layer 30 changes. Therefore, the phase of the light propagating in the one-dimensional photonic crystal portion 15b also changes. The optical control unit including the first electrode 27, the second electrode 28, the one-dimensional photonic crystal unit 15b, and the optical active medium including the optical resin layer 30 can function as a phase control unit.

The light propagating in the waveguide 12 is output to the second spot size converter (18, 21). The second spot size converter (18, 21) increases the size of the light and outputs the light to the outside of the optical control device 1b.

The optical control device of the modified example of the present embodiment is optically active composed of the first electrode 27, the second electrode 28, the one-dimensional photonic crystal portion 15b, and the optical resin layer 30 of the present embodiment. It may be any of an optical modulator, an optical switch, and a variable wavelength filter including a phase control unit including a medium. In any of the light modulators, optical switches and tunable wavelength filters, the waveguide 12 may be configured as a symmetric Machzenda waveguide or an asymmetric Machzenda waveguide, although not particularly limited.

In the optical control device 1b of the present embodiment and its modification, the light propagating through the waveguide 12 is the first electrode 27, the second electrode 28, the one-dimensional photonic crystal portion 15b, and the optical resin layer 30. In the phase control unit including the optically active medium composed of the above, the phase is changed. Therefore, by changing the voltage between the first electrode 27 and the second electrode 28, the optical control device 1b of the present embodiment and its modified example can be used for optical control of the present embodiment and its modified example. The state of light output from the device 1b (light intensity, light phase, light wavelength, etc.) can be changed.

The method for manufacturing the optical control device 1b of the present embodiment includes the same steps as the method for manufacturing the optical control device 1 of the first embodiment, but includes a plurality of island-shaped regions included in the one-dimensional photonic crystal portion 15b. The arrangement pattern is different.

The optical control device 1b and the manufacturing method thereof of the present embodiment and its modifications have the same effects as the optical control device 1 of the first embodiment and the manufacturing method thereof, but are mainly different in the following points.

In the optical control device 1b of the present embodiment and its modification, the light incident on the optical control device 1b propagates through the one-dimensional photonic crystal portion 15b. The light propagating in the one-dimensional photonic crystal portion 15b propagates the one-dimensional photonic crystal structure (15b, 30) as a so-called slow light. Therefore, the interaction between the light propagating in the one-dimensional photonic crystal portion 15b and the optical resin layer 30 having a second-order nonlinear susceptibility can be enhanced. According to the optical control device 1b of this embodiment and its modifications, the size of the optical control device 1b can be reduced.

In the optical control device 1b manufactured by the method for manufacturing the optical control device 1b of the present embodiment and its modification, the light incident on the optical control device 1b propagates through the one-dimensional photonic crystal portion 15b. The light propagating in the one-dimensional photonic crystal portion 15b propagates the one-dimensional photonic crystal structure (15b, 30) as a so-called slow light. Therefore, the interaction between the light propagating in the one-dimensional photonic crystal portion 15b and the optical resin layer 30 having a second-order nonlinear susceptibility can be enhanced. According to the method of manufacturing the optical control device 1b of the present embodiment and its modification, the size of the optical control device 1b can be reduced.

(Embodiment 4)
The optical control device 1c according to the fourth embodiment will be described with reference to FIGS. 19 to 21. The optical control device 1c of the present embodiment has the same configuration as the optical control device 1b of the second embodiment, but is mainly different in the following points. The optical control device 1c of the present embodiment is a second-order nonlinear optical device such as a second harmonic generation (SHG) device, a sum frequency generation device, a difference frequency generation device, or an optical parametric oscillation (OPO) device. By changing the voltage between the first electrode 27 and the second electrode 28, the wavelength of the light output from the optical control device 1c can be changed.

(Embodiment 5)
The optical control device 1f according to the fourth embodiment will be described with reference to FIGS. 22 to 24. The optical control device 1f of the present embodiment has the same configuration as the optical control device 1 of the first embodiment, but differs mainly in the following points.

In the optical control device 1f of the present embodiment, the one-dimensional photonic crystal portion 15f includes a first one-dimensional photonic crystal portion 77 and a second one-dimensional photonic crystal portion 78. The first one-dimensional photonic crystal portion 77 of the present embodiment has the same configuration as the first one-dimensional photonic crystal portion (15) of the first embodiment.

The second one-dimensional photonic crystal portion 78 may be provided at one or more of both ends of the first one-dimensional photonic crystal portion 77. The second one-dimensional photonic crystal portion 78 may be continuously provided on the first one-dimensional photonic crystal portion 77. The second periodic structure of the second one-dimensional photonic crystal portion 78 is a constant periodic structure. The second one-dimensional photonic crystal portion 78 includes a plurality of island-like regions arranged in the first direction with a gap. The plurality of island-shaped regions are arranged at a second pitch along the first direction. The second pitch is a constant pitch.

The plurality of island-shaped regions contained in the second one-dimensional photonic crystal portion 78 have a fourth width equal to each other. The fourth width is defined as the length of each of the plurality of island regions contained in the second one-dimensional photonic crystal portion 78 in the first direction. The plurality of gaps in the second one-dimensional photonic crystal portion 78 have a fifth width equal to each other. The fifth width is defined as the length of each of the plurality of gaps contained in the second one-dimensional photonic crystal portion 78 in the first direction. Each of the plurality of island-shaped regions contained in the second one-dimensional photonic crystal portion 78 has a sixth width in the second direction (for example, the y direction).

The second periodic structure in the second one-dimensional photonic crystal portion 78 is the same as the periodic structure at the end of the first one-dimensional photonic crystal portion 77 in which the second one-dimensional photonic crystal portion 78 is adjacent. There may be. Specifically, the fourth width may _{be equal to W 1} (i _max ) or equal to W ₁ (-i _max ). The second pitch may be equal to the first pitch P. The sixth width may be equal to the third width W _3.

The method for manufacturing the optical control device 1f of the present embodiment includes the same steps as the method for manufacturing the optical control device 1 of the first embodiment, but when forming the first one-dimensional photonic crystal portion 77, It differs in that it also forms a second one-dimensional photonic crystal portion 78.

The optical control device 1f of the present embodiment has the same effect as the optical control device 1 of the first embodiment, but is mainly different in the following points.

In the optical control device 1f of the present embodiment, it is formed in the photonic band gap (PBG) of the one-dimensional photonic crystal structure (15f, 30) composed of the one-dimensional photonic crystal portion (15f) and the optical resin layer 30. Only light coupled to the resulting resonance mode can propagate the one-dimensional photonic crystal structure (15f, 30). Therefore, the interaction between the light propagating in the one-dimensional photonic crystal portion 15f and the optical resin layer 30 having a second-order nonlinear susceptibility can be enhanced.

In the optical control device 1f of the present embodiment, the one-dimensional photonic crystal portion 15f includes a second one-dimensional photonic crystal portion 78. The second periodic structure of the second one-dimensional photonic crystal portion 78 is a constant periodic structure. Therefore, the optical control device 1f of the present embodiment has a higher Q value and a narrower spectrum full width at half maximum. According to the optical control device 1f of the present embodiment, the operating voltage of the optical control device 1f can be reduced. Further, according to the optical control device 1f of the present embodiment, the wavelength selection characteristic of the optical control device 1f can be improved.

(Embodiment 6)
The electromagnetic wave detection device 3 according to the sixth embodiment will be described with reference to FIGS. 2, 3 and 25. The electromagnetic wave detection device 3 of the present embodiment has the same configuration as the optical control device 1 of the first embodiment, but differs mainly in the following points.

The electromagnetic wave detection device 3 of the present embodiment includes an optical control device 1 and a first antenna 70 connected to the first electrode 27. The electromagnetic wave detection device 3 of the present embodiment may include a second antenna 71 connected to the second electrode 28. The electromagnetic wave detection device 3 of the present embodiment may include a photodetector 75. The second electrode 28 is not particularly limited, but may be grounded.

The first antenna 70 may be arranged on the main surface 7 of the substrate 6. Specifically, the first antenna 70 may be arranged on the first base layer 23. The first antenna 70 receives an electromagnetic wave such as a terahertz wave or a millimeter wave. The electromagnetic wave is input to the first electrode 27 and changes the refractive index of the optical resin layer 30. Therefore, the electromagnetic wave received by the first antenna 70 can change the state of light (light intensity, light wavelength, etc.) emitted from the optical control device 1. By detecting this change in the state of light using the photodetector 75, the electromagnetic wave received by the first antenna 70 can be detected. The first antenna 70 is not particularly limited, but may be, for example, a conductive layer made of a conductive material such as gold (Au).

The second antenna 71 may be arranged on the main surface 7 of the substrate 6. Specifically, the second antenna 71 may be arranged on the second base layer 24. The second antenna 71 receives an electromagnetic wave such as a terahertz wave or a millimeter wave. The electromagnetic wave is input to the second electrode 28 and changes the refractive index of the optical resin layer 30. Therefore, the electromagnetic wave received by the second antenna 71 can change the state of light (light intensity, light wavelength, etc.) emitted from the optical control device 1. By detecting this change in the state of light using the photodetector 75, the electromagnetic wave received by the second antenna 71 can be detected. The second antenna 71 is not particularly limited, but may be, for example, a conductive layer made of a conductive material such as gold (Au).

The photodetector 75 may be arranged on the main surface 7 of the substrate 6. Specifically, the photodetector 75 may be located on the waveguide 12. More specifically, the photodetector 75 may be located on the second tapered waveguide 18. The photodetector 75 detects the light propagating in the waveguide 12. Specifically, the photodetector 75 may cover the waveguide 12. More specifically, the photodetector 75 may cover the second tapered waveguide 18.

The manufacturing method of the electromagnetic wave detection device 3 of the present embodiment is the same as the manufacturing method of the optical control device 1 of the first embodiment, but is mainly different in the following points.

The method of manufacturing the electromagnetic wave detection device 3 of the present embodiment includes forming a first antenna 70 connected to the first electrode 27. The first antenna 70 may be formed by depositing a conductive material such as gold (Au) on the main surface 7. Specifically, the first antenna 70 may be formed by depositing a conductive material such as gold (Au) on the first base layer 23. The method of manufacturing the electromagnetic wave detection device 3 of the present embodiment may include forming a second antenna 71 connected to the second electrode 28. The second antenna 71 may be formed by depositing a conductive material such as gold (Au) on the main surface 7. Specifically, the second antenna 71 may be formed by depositing a conductive material such as gold (Au) on the second base layer 24.

The method for manufacturing the electromagnetic wave detection device 3 of the present embodiment may include forming a photodetector 75 on the main surface 7. The photodetector 75 may be formed, for example, by depositing the material contained in the photodetector 75 on the main surface 7. Specifically, the photodetector 75 may be formed, for example, by depositing the material contained in the photodetector 75 on the waveguide 12. More specifically, the photodetector 75 may be formed, for example, by depositing the material contained in the photodetector 75 onto the second tapered waveguide 18.

With reference to FIGS. 23, 24 and 26, the electromagnetic wave detection device 3b of the modified example of the present embodiment replaces the optical control device 1 of the first embodiment with the optical control device 1f of the fifth embodiment. Either may be provided. The electromagnetic wave detection device of still another modification of the present embodiment includes any of the optical control devices 1b and 1c of the third embodiment and the fourth embodiment in place of the optical control device 1 of the first embodiment. You may.

The effects of the electromagnetic wave detection devices 3 and 3b of the present embodiment and its modified examples will be described. The electromagnetic wave detection devices 3 and 3b of the present embodiment and its modifications include optical control devices 1, 1b, 1c, 1f and a first antenna 70 connected to the first electrode 27. The electromagnetic wave detection device 3 of the present embodiment includes optical control devices 1, 1b, 1c, 1f that include an optical resin layer having a large second-order nonlinear sensitivity and have a low light loss and a high yield. Electromagnetic wave detection devices 3, 3b may be provided. Further, in the optical control devices 1, 1b, 1c, 1f of the present embodiment, between the light propagating in the one-dimensional photonic crystal portions 15, 15b, 15f and the optical resin layer 30 having a second-order nonlinear sensitivity. Interactions can be enhanced. According to the electromagnetic wave detection devices 3 and 3b of the present embodiment, the sizes of the optical control devices 1, 1b, 1c and 1f can be reduced, and the size of the electromagnetic wave detection devices 3 and 3b can also be reduced. According to the electromagnetic wave detection devices 3 and 3b of the present embodiment, weak electromagnetic waves can be detected with high accuracy.

The electromagnetic wave detection devices 3 and 3b of the present embodiment include an optical resin layer 30 having a second-order nonlinear susceptibility. The electromagnetic wave detection devices 3 and 3b of the present embodiment have a high response speed and can accurately detect an electromagnetic wave such as a terahertz wave or a millimeter wave.

The electromagnetic wave detection devices 3 and 3b of the present embodiment and its modifications include optical control devices 1, 1f and a first antenna 70 connected to the first electrode 27. In the electromagnetic wave detection devices 3 and 3b of the present embodiment and its modifications, only the light coupled to the resonance mode formed in the photonic band gap (PBG) of the one-dimensional photonic crystal structure (15, 15f, 30). Can propagate through the first one-dimensional photonic crystal portion (15,77). In the electromagnetic wave detection device of the modified example of the present embodiment, which includes any of the optical control devices 1b and 1c of the third embodiment and the fourth embodiment instead of the optical control device 1 of the first embodiment, the one-dimensional photo The light propagating through the nick crystal portion 15b propagates through the one-dimensional photonic crystal structure (15b, 30) as slow light. Therefore, the interaction between the light propagating in the one-dimensional photonic crystal portions 15, 15b, 15f and the optical resin layer 30 having a second-order nonlinear susceptibility can be enhanced. According to the electromagnetic wave detection devices 3 and 3b of the present embodiment and its modifications, the sizes of the optical control devices 1, 1b, 1c and 1f can be reduced, and the electromagnetic wave detection devices 3 of the present embodiment and its modifications can be reduced. , 3b size can also be reduced.

In the electromagnetic wave detection devices 3 and 3b of the present embodiment and its modifications, the first periodic structure of the first one-dimensional photonic crystal portion (15,77) is the first one-dimensional photo in the first direction. It gradually changes as it moves away from the center of the nick crystal part (15,77). The one-dimensional photonic crystal structure (15, 15f, 30) has a high Q value, so that the electromagnetic wave detectors 3, 3b have a narrow spectral half width. According to the electromagnetic wave detection devices 3 and 3b of the present embodiment and its modified examples, weak electromagnetic waves can be detected with high accuracy.

It should be considered that the first to sixth embodiments disclosed this time and their variations are exemplary in all respects and not restrictive. As long as there is no contradiction, at least two of the first to sixth embodiments disclosed this time and variations thereof may be combined. The scope of the present invention is shown by the scope of claims rather than the above description, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims.

1,1b, 1c, 1d, 1f optical control device, 2,2b optical integrated circuit, 3,3b electromagnetic wave detector, 6 substrate, 7 main surface, 8 waveguide material layer, 12 waveguide, 15, 15b, 15f 1 Dimensional photonic crystal part, 17 1st tapered waveguide, 18 2nd tapered waveguide, 20 1st layer, 21 2nd layer, 23 1st base layer, 24 2nd base layer, 27th 1 electrode, 28 2nd electrode, 30 optical fiber layer, 33 resist layer, 34,64 nozzles, 35 liquid, 37,39 heater, 38 power supply, 40 drive circuit section, 41 first electrical wiring, 42,60 Light emitting unit, 43 first optical wiring, 44 second electrical wiring, 45 combiner, 46 second optical wiring, 47 first optical fiber, 51 second optical fiber, 52 third optical wiring, 53 Demultiplexer, 54 4th optical wiring, 55 light receiving part, 56 3rd electrical wiring, 57 receiving circuit part, 70 1st antenna, 71 2nd antenna, 75 optical detector, 77 1st 1 Dimensional photonic crystal part, 78 Second one-dimensional photonic crystal part.

Claims (7)

A substrate with a main surface and
A waveguide formed on the main surface and including a one-dimensional photonic crystal portion,
An optical resin layer formed on the main surface and covering the one-dimensional photonic crystal portion, and
The first electrode formed on the main surface and
A second electrode formed on the main surface is provided.
The first electrode and the second electrode have a second direction that intersects a first direction in which the one-dimensional photonic crystal portion extends and a third direction parallel to the normal of the main surface. Is arranged so as to sandwich at least a part of the optical resin layer and the one-dimensional photonic crystal portion.
The one-dimensional photonic crystal portion includes a first one-dimensional photonic crystal portion, and the first periodic structure of the first one-dimensional photonic crystal portion is the first one in the first direction. It gradually changes as it moves away from the center of the one-dimensional photonic crystal part.
The one-dimensional photonic crystal portion is configured such that a resonance mode is formed in a photonic band gap of a one-dimensional photonic crystal structure composed of the one-dimensional photonic crystal portion and the optical resin layer.
The Q value of the one-dimensional photonic crystal structure is 500 or more.
The optical resin layer has the maximum quadratic nonlinear susceptibility in the second direction.
An optical control device in which the first thermo-optical coefficient of the one-dimensional photonic crystal portion is compensated by the second thermo-optical coefficient of the optical resin layer. A drive circuit unit is further provided on the main surface.
The optical control device according to claim 1, wherein the drive circuit unit is configured to control the optical control device. The optical control device according to claim 1 or 2.
It is provided with a light emitting portion formed on the main surface.
The light emitting unit is an optical integrated circuit that is optically coupled to the optical control device. The first one-dimensional photonic crystal portion includes a plurality of island-like regions arranged in the first direction with a gap.
Each of the plurality of island-shaped regions has a first width in the first direction.
The plurality of island-shaped regions are formed at a first pitch along the first direction.
When one of the plurality of island-shaped regions is separated from the first island-shaped region located at the center of the first one-dimensional photonic crystal portion by N times the first pitch, the plurality of islands are formed. The optical control device according to any one of claims 1 to 3, wherein the first width of the one of the shape regions increases in proportion to the square of N. The one-dimensional photonic crystal portion includes a second one-dimensional photonic crystal portion.
It said second periodic structure of the second one-dimensional photonic crystal portion is constant of the periodic structure, the light control device according to any one of claims 1 to 4. The optical control device according to any one of claims 1 to 5.
An electromagnetic wave detection device including a first antenna connected to the first electrode. The method for manufacturing the optical control device according to any one of claims 1 to 5, wherein the manufacturing method for the optical control device is the method.
And that on the main surface of the substrate to form the waveguide including the one-dimensional photonic crystal portion,
And that on the primary surface to form said first electrode and said second electrode,
Wherein a forming an optical resin layer, wherein forming the optical resin layer, by an ink jet method, a liquid containing an optical resin material having a second order nonlinear susceptibility, wherein the first electrode and the second The optical resin layer is not patterned and further comprises being selectively provided between the electrodes.
A method for manufacturing an optical control device, comprising applying a polling voltage between the first electrode and the second electrode to orient the optical resin material in the second direction.

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