JP6882721B2 - Electroless plating base material containing highly branched polymer and metal fine particles - Google Patents
Electroless plating base material containing highly branched polymer and metal fine particles Download PDFInfo
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- JP6882721B2 JP6882721B2 JP2018504520A JP2018504520A JP6882721B2 JP 6882721 B2 JP6882721 B2 JP 6882721B2 JP 2018504520 A JP2018504520 A JP 2018504520A JP 2018504520 A JP2018504520 A JP 2018504520A JP 6882721 B2 JP6882721 B2 JP 6882721B2
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- base material
- metal
- fine particles
- photosensitive
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- 239000000463 material Substances 0.000 title claims description 140
- 229910052751 metal Inorganic materials 0.000 title claims description 137
- 239000002184 metal Substances 0.000 title claims description 137
- 239000010419 fine particle Substances 0.000 title claims description 65
- 238000007772 electroless plating Methods 0.000 title claims description 52
- 229920000642 polymer Polymers 0.000 title claims description 36
- 238000007747 plating Methods 0.000 claims description 91
- 229920000587 hyperbranched polymer Polymers 0.000 claims description 85
- 150000001875 compounds Chemical class 0.000 claims description 76
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 41
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 40
- 125000003277 amino group Chemical group 0.000 claims description 33
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 31
- 125000004432 carbon atom Chemical group C* 0.000 claims description 31
- 150000003573 thiols Chemical class 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 125000005702 oxyalkylene group Chemical group 0.000 claims description 16
- 125000002947 alkylene group Chemical group 0.000 claims description 15
- 238000000206 photolithography Methods 0.000 claims description 15
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- 125000004122 cyclic group Chemical group 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 13
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
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- 239000004332 silver Substances 0.000 claims description 9
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- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- SVOOVMQUISJERI-UHFFFAOYSA-K rhodium(3+);triacetate Chemical compound [Rh+3].CC([O-])=O.CC([O-])=O.CC([O-])=O SVOOVMQUISJERI-UHFFFAOYSA-K 0.000 description 1
- SONJTKJMTWTJCT-UHFFFAOYSA-K rhodium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Rh+3] SONJTKJMTWTJCT-UHFFFAOYSA-K 0.000 description 1
- OJLCQGGSMYKWEK-UHFFFAOYSA-K ruthenium(3+);triacetate Chemical compound [Ru+3].CC([O-])=O.CC([O-])=O.CC([O-])=O OJLCQGGSMYKWEK-UHFFFAOYSA-K 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- BHRZNVHARXXAHW-UHFFFAOYSA-N sec-butylamine Chemical compound CCC(C)N BHRZNVHARXXAHW-UHFFFAOYSA-N 0.000 description 1
- 150000003333 secondary alcohols Chemical class 0.000 description 1
- QZAYGJVTTNCVMB-UHFFFAOYSA-N serotonin Chemical compound C1=C(O)C=C2C(CCN)=CNC2=C1 QZAYGJVTTNCVMB-UHFFFAOYSA-N 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- ODZPKZBBUMBTMG-UHFFFAOYSA-N sodium amide Chemical class [NH2-].[Na+] ODZPKZBBUMBTMG-UHFFFAOYSA-N 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 229940035044 sorbitan monolaurate Drugs 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000001570 sorbitan monopalmitate Substances 0.000 description 1
- 235000011071 sorbitan monopalmitate Nutrition 0.000 description 1
- 229940031953 sorbitan monopalmitate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 239000001589 sorbitan tristearate Substances 0.000 description 1
- 235000011078 sorbitan tristearate Nutrition 0.000 description 1
- 229960004129 sorbitan tristearate Drugs 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- AOCSUUGBCMTKJH-UHFFFAOYSA-N tert-butyl n-(2-aminoethyl)carbamate Chemical compound CC(C)(C)OC(=O)NCCN AOCSUUGBCMTKJH-UHFFFAOYSA-N 0.000 description 1
- POHWAQLZBIMPRN-UHFFFAOYSA-N tert-butyl n-(3-aminopropyl)carbamate Chemical compound CC(C)(C)OC(=O)NCCCN POHWAQLZBIMPRN-UHFFFAOYSA-N 0.000 description 1
- ZFQWJXFJJZUVPI-UHFFFAOYSA-N tert-butyl n-(4-aminobutyl)carbamate Chemical compound CC(C)(C)OC(=O)NCCCCN ZFQWJXFJJZUVPI-UHFFFAOYSA-N 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- IFXORIIYQORRMJ-UHFFFAOYSA-N tribenzylphosphane Chemical compound C=1C=CC=CC=1CP(CC=1C=CC=CC=1)CC1=CC=CC=C1 IFXORIIYQORRMJ-UHFFFAOYSA-N 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- DANYXEHCMQHDNX-UHFFFAOYSA-K trichloroiridium Chemical compound Cl[Ir](Cl)Cl DANYXEHCMQHDNX-UHFFFAOYSA-K 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- KCTAHLRCZMOTKM-UHFFFAOYSA-N tripropylphosphane Chemical compound CCCP(CCC)CCC KCTAHLRCZMOTKM-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F12/02—Monomers containing only one unsaturated aliphatic radical
- C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
- C08F12/26—Nitrogen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
Description
本発明は、ハイパーブランチポリマー、金属微粒子、重合性化合物及び光重合開始剤を含む感光性下地剤に関する。 The present invention relates to a photosensitive base material containing a hyperbranched polymer, metal fine particles, a polymerizable compound and a photopolymerization initiator.
近年、パソコン、携帯電話、ウェアラブル端末などのデバイスの小型化に伴い、パターンの高密度化や、透過率や視認性が高い配線を透明基板上に形成するために、微細配線パターンを容易に形成する手法が求められている。 In recent years, with the miniaturization of devices such as personal computers, mobile phones, and wearable terminals, fine wiring patterns can be easily formed in order to increase the density of patterns and to form wiring with high transmittance and visibility on a transparent substrate. There is a need for a method to do this.
微細配線を形成する手段の一つに、フォトリソグラフィーにより無電解めっき触媒をパターニングした後、無電解めっきを施す方法が開示されている(特許文献1)。具体的には、無電解めっきの触媒となる金属錯体、金属イオン又は金属コロイドなどを感光性樹脂に混合した材料が用いられ、フォトマスクを介したUV露光、現像により、格子状などの任意のパターンの下地を形成し、これに無電解めっきを施すことにより導電性パターンを得る方法が開示されている。 As one of the means for forming fine wiring, a method of patterning an electroless plating catalyst by photolithography and then performing electroless plating is disclosed (Patent Document 1). Specifically, a material in which a metal complex, a metal ion, a metal colloid, etc., which is a catalyst for electroless plating, is mixed with a photosensitive resin is used, and UV exposure through a photomask, development, and any arbitrary shape such as a grid pattern are used. A method for obtaining a conductive pattern by forming a base of a pattern and applying electroless plating to the base is disclosed.
また、無電解めっき下地剤として、アンモニウム基を有するハイパーブランチポリマー及びPd微粒子を含む組成物を使用することで、塗布後活性化工程を経ずに直接無電解めっき液へ浸漬させるだけで無電解めっきが形成される例が開示されている(特許文献2)。 Further, by using a composition containing a hyperbranched polymer having an ammonium group and Pd fine particles as an electroless plating base material, it is electroless by simply immersing it directly in an electroless plating solution without going through an activation step after application. An example in which plating is formed is disclosed (Patent Document 2).
上記特許文献1では、金属コロイドの安定化剤として、PVPなどの保護コロイドやドデシルベンゼンスルホン酸等の界面活性剤などが用いられるが、保護コロイドの分解や金属コロイドの凝集などによるワニスの安定性が懸念されるだけでなく、プロセスにおいては、現像時に触媒の洗浄が困難である場合が多い。また、無電解めっきの際に、目的部分以外にもめっきが析出することも問題となる。さらに、水溶性のレジストや金属安定剤を用いるため、パターンのにじみ、線太りなどのパターン形状の保持が問題となる。該特許文献では、得られた透明導電膜の透過率と抵抗値について議論されるのみであり、得られたパターンの線幅(形状)については詳細に言及されていない。 In Patent Document 1, a protective colloid such as PVP and a surfactant such as dodecylbenzenesulfonic acid are used as a stabilizer for the metal colloid, but the stability of the varnish due to decomposition of the protective colloid and aggregation of the metal colloid. Not only is there a concern, but in the process, it is often difficult to clean the catalyst during development. Another problem is that during electroless plating, plating is deposited in areas other than the target portion. Further, since a water-soluble resist or a metal stabilizer is used, there is a problem in maintaining the pattern shape such as pattern bleeding and line thickening. In the patent document, only the transmittance and the resistance value of the obtained transparent conductive film are discussed, and the line width (shape) of the obtained pattern is not mentioned in detail.
また液晶表示素子等に使用する透明電極には、画像の視認性が要求される。しかし、無電解めっきにより金属配線を形成した場合、形成された金属被膜が金属光沢を有し、それが外部光を反射するため、金属配線が目立たず画像視認性の高い明瞭な表示装置を製造することが難しいという問題がある。そのため、無電解めっきにより透明電極を形成する技術にあっては、形成した金属めっき被膜の裏面(透明基材面)における黒色化による金属光沢の抑制が求められる。 Further, the transparent electrode used for a liquid crystal display element or the like is required to have visibility of an image. However, when metal wiring is formed by electroless plating, the formed metal coating has a metallic luster, which reflects external light, so that the metal wiring is inconspicuous and a clear display device with high image visibility is manufactured. There is a problem that it is difficult to do. Therefore, in the technique of forming a transparent electrode by electroless plating, it is required to suppress metallic luster by blackening the back surface (transparent base material surface) of the formed metal plating film.
そこで本発明はこうした課題に着目し、環境に配慮し、少ない工程数で簡便に処理でき、かつフォトリソグラフィーにより容易に幅数μmといった微細な配線を形成可能な、無電解めっきの前処理工程として用いられる新たな無電解めっき下地剤の提供を目的とする。 Therefore, the present invention focuses on these problems, and as a pretreatment step for electroless plating, which is environmentally friendly, can be easily processed with a small number of steps, and can easily form fine wiring having a width of several μm by photolithography. An object of the present invention is to provide a new electroless plating base material to be used.
本発明者らは、上記目的を達成するために鋭意検討した結果、アンモニウム基を分子末端に有するハイパーブランチポリマーと金属微粒子、そしてここに特定の重合性化合物と光重合開始剤並びにアミノ基を有する化合物及び多官能チオールとを組み合わせて感光性下地剤を得、これを基材上に塗布して得られる層が、フォトリソグラフィーによりパターニング可能であり、パターン化された無電解金属めっきの下地層を得られること、該下地層がめっき性に優れ、金属めっき膜と被めっき基材との密着性の向上に有用な層となることを見出した。さらに、該パターン化された無電解金属めっきの下地層をガラス等の透明基材上に形成し、その上に金属めっき被膜を形成した際、めっき被膜形成部分の裏面が黒色を呈することを見出した。特に、上記感光剤下地剤において、アミノ基を有する化合物とチオール化合物の配合により、金属微粒子の分散性や反応性を向上できるとともに、高感度なパターニングが可能となることを見出し、本発明を完成させた。 As a result of diligent studies to achieve the above object, the present inventors have a hyperbranched polymer having an ammonium group at the molecular end and metal fine particles, and a specific polymerizable compound, a photopolymerization initiator, and an amino group. A photosensitive base material is obtained by combining a compound and a polyfunctional thiol, and the layer obtained by applying this on the base material can be patterned by photolithography, and a patterned base layer of electroless metal plating can be obtained. It has been found that the base layer is excellent in platenability and is a useful layer for improving the adhesion between the metal plating film and the base material to be plated. Further, it was found that when the patterned electroless metal plating base layer is formed on a transparent base material such as glass and a metal plating film is formed on the transparent base material, the back surface of the plating film forming portion is black. It was. In particular, in the above-mentioned photosensitive agent base material, it has been found that the dispersibility and reactivity of metal fine particles can be improved and highly sensitive patterning becomes possible by blending a compound having an amino group and a thiol compound, and the present invention has been completed. I let you.
すなわち、本発明は、第1観点として、基材上に無電解めっき処理により金属めっき膜を形成するための下地剤であって、
(a)アンモニウム基を分子末端に有し且つ重量平均分子量が1,000〜5,000,000であるハイパーブランチポリマー、
(b)金属微粒子、
(c)分子内に1個以上の末端が重合性不飽和結合である側鎖を有し、オキシアルキレン基を全繰り返し単位の100モルあたり15〜50モル有し且つ重量平均分子量が10,000〜100,000である高分子化合物、
(d)光重合開始剤、
(e)アミノ基を有する化合物、及び
(f)多官能チオール
を含む感光性下地剤に関する。
第2観点として、前記(c)高分子化合物が、分子内に3個以上の(メタ)アクリロイル基を有する化合物である、第1観点に記載の感光性下地剤に関する。
第3観点として、前記(c)高分子化合物のオキシアルキレン基がポリ(オキシアルキレン)基である、第1観点又は第2観点のうち何れか一つに記載の感光性下地剤に関する。
第4観点として、前記(c)高分子化合物の重量平均分子量が20,000〜50,000である、第1観点乃至第4観点のうちいずれか一つに記載の感光性下地剤に関する。
第5観点として、前記(f)多官能チオールが4官能チオールである、第1観点乃至第4観点のうち何れか一つに記載の感光性下地剤に関する。
第6観点として、前記(e)アミノ基を有する化合物がアミノ基を有するアルコキシシラン化合物である、第1観点乃至第5観点のうち何れか一つに記載の感光性下地剤に関する。
第7観点として、前記(a)ハイパーブランチポリマーが、式[1]で表されるハイパーブランチポリマーである、第1観点乃至第6観点のうち何れか一つに記載の感光性下地剤に関する。
(式中、R1はそれぞれ独立して水素原子又はメチル基を表し、R2乃至R4はそれぞれ独立して水素原子、炭素原子数1乃至20の直鎖状、枝分かれ状若しくは環状のアルキル基、炭素原子数7乃至20のアリールアルキル基又は−(CH2CH2O)mR5(式中、R5は水素原子又はメチル基を表し、mは2乃至100の整数を表す。)を表す(該アルキル基及びアリールアルキル基は、アルコキシ基、ヒドロキシ基、アンモニウム基、カルボキシ基又はシアノ基で置換されていてもよい。)か、R2乃至R4のうちの2つの基が一緒になって、直鎖状、枝分かれ状又は環状のアルキレン基を表すか、又はR2乃至R4はそれらが結合する窒素原子と一緒になって環を形成してもよく、X−は陰イオンを表し、nは繰り返し単位構造の数であって、5乃至100,000の整数を表し、A1は式[2]で表される構造を表す。)
(式中、A2はエーテル結合又はエステル結合を含んでいてもよい炭素原子数1乃至30の直鎖状、枝分かれ状又は環状のアルキレン基を表し、Y1乃至Y4はそれぞれ独立して水素原子、炭素原子数1乃至20のアルキル基、炭素原子数1乃至20のアルコキシ基、ニトロ基、ヒドロキシ基、アミノ基、カルボキシ基又はシアノ基を表す。)
第8観点として、前記(a)ハイパーブランチポリマーが、式[3]で表されるハイパーブランチポリマーである、第7観点に記載の感光性下地剤に関する。
(式中、R1乃至R4及びnは前記と同じ意味を表す。)
第9観点として、前記(b)金属微粒子が、鉄(Fe)、コバルト(Co)、ニッケル(Ni)、銅(Cu)、パラジウム(Pd)、銀(Ag)、スズ(Sn)、白金(Pt)及び金(Au)からなる群より選択される少なくとも一種の金属の微粒子である、第1観点乃至第8観点のうち何れか一つに記載の感光性下地剤に関する。
第10観点として、前記(b)金属微粒子が、パラジウム微粒子である、第9観点に記載の感光性下地剤に関する。
第11観点として、前記(b)金属微粒子が、1〜100nmの平均粒径を有する微粒子である、第1観点乃至第10観点のうち何れか一つに記載の感光性下地剤に関する。
第12観点として、フォトリソグラフィーによりパターン形成が可能である、第1観点乃至第11観点のうち何れか一つに記載の感光性下地剤に関する。
第13観点として、第1観点乃至第12観点のうち何れか一つに記載の感光性下地剤からなる、フォトリソグラフィーによるパターン化層である、無電解めっき下地層に関する。
第14観点として、第13観点に記載の無電解めっき下地層上に形成された無電解めっき層からなる、金属めっき膜に関する。
第15観点として、基材と、該基材上に形成された第13観点に記載の無電解めっき下地層と、該無電解めっき下地層上に形成された第14観点に記載の金属めっき膜とを具備する、金属被膜基材に関する。
第16観点として、下記A工程乃至C工程を含む、金属被膜基材の製造方法に関する。
A工程:第1観点乃至第12観点のうち何れか一つに記載の感光性下地剤を基材上に塗布し、下地層を具備する工程、
B工程:フォトリソグラフィーにより所望のパターンの下地層を形成する工程、
C工程:パターニングされた下地層を具備した基材を無電解めっき浴に浸漬し、金属めっき膜を形成する工程。That is, the present invention is, as a first aspect, a base material for forming a metal plating film on a base material by electroless plating.
(A) A hyperbranched polymer having an ammonium group at the end of the molecule and having a weight average molecular weight of 1,000 to 5,000,000.
(B) Metal fine particles,
(C) It has one or more side chains in the molecule that are polymerizable unsaturated bonds, has 15 to 50 mol of oxyalkylene groups per 100 mol of all repeating units, and has a weight average molecular weight of 10,000. 100,000 high molecular weight compounds,
(D) Photopolymerization initiator,
It relates to (e) a compound having an amino group, and (f) a photosensitive base material containing a polyfunctional thiol.
The second aspect relates to the photosensitive base material according to the first aspect, wherein the polymer compound (c) is a compound having three or more (meth) acryloyl groups in the molecule.
The third aspect relates to the photosensitive base material according to any one of the first aspect and the second aspect, wherein the oxyalkylene group of the polymer compound (c) is a poly (oxyalkylene) group.
As a fourth aspect, the photosensitive base material according to any one of the first to fourth aspects, wherein the weight average molecular weight of the polymer compound (c) is 20,000 to 50,000.
As a fifth aspect, the photosensitive base material according to any one of the first to fourth aspects, wherein the polyfunctional thiol (f) is a tetrafunctional thiol.
The sixth aspect is the photosensitive base material according to any one of the first to fifth aspects, wherein the compound having an amino group (e) is an alkoxysilane compound having an amino group.
As a seventh aspect, the photosensitive base material according to any one of the first to sixth aspects, wherein the hyperbranched polymer (a) is a hyperbranched polymer represented by the formula [1].
(In the formula, R 1 independently represents a hydrogen atom or a methyl group, and R 2 to R 4 independently represent a hydrogen atom and a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, respectively. , An arylalkyl group having 7 to 20 carbon atoms or-(CH 2 CH 2 O) m R 5 (in the formula, R 5 represents a hydrogen atom or a methyl group, and m represents an integer of 2 to 100). Represent (the alkyl group and arylalkyl group may be substituted with an alkoxy group, a hydroxy group, an ammonium group, a carboxy group or a cyano group), or two groups of R 2 to R 4 are combined together. Representing a linear, branched or cyclic alkylene group, or R 2 to R 4 may be combined with the nitrogen atom to which they are attached to form a ring, where X − represents an anion. Represented, n is the number of repeating unit structures, represents an integer of 5 to 100,000, and A 1 represents the structure represented by the equation [2].)
(In the formula, A 2 represents a linear, branched or cyclic alkylene group having 1 to 30 carbon atoms which may contain an ether bond or an ester bond, and Y 1 to Y 4 are independently hydrogen. Represents an atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, a nitro group, a hydroxy group, an amino group, a carboxy group or a cyano group).
As an eighth aspect, the photosensitive base material according to the seventh aspect, wherein the hyperbranched polymer (a) is a hyperbranched polymer represented by the formula [3].
(In the formula, R 1 to R 4 and n are as defined above.)
As a ninth viewpoint, the metal fine particles (b) are iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), tin (Sn), platinum ( The photosensitive base material according to any one of the first to eighth aspects, which is at least one kind of metal fine particles selected from the group consisting of Pt) and gold (Au).
The tenth aspect relates to the photosensitive base material according to the ninth aspect, wherein the metal fine particles (b) are palladium fine particles.
The eleventh viewpoint relates to the photosensitive base material according to any one of the first to tenth viewpoints, wherein the metal fine particles (b) are fine particles having an average particle size of 1 to 100 nm.
The twelfth aspect relates to the photosensitive base material according to any one of the first aspect to the eleventh aspect, which can form a pattern by photolithography.
As a thirteenth viewpoint, the present invention relates to an electroless plating base layer, which is a patterned layer by photolithography, which comprises the photosensitive base material according to any one of the first to twelfth viewpoints.
As the 14th viewpoint, the present invention relates to a metal plating film composed of an electroless plating layer formed on the electroless plating base layer according to the 13th viewpoint.
As the fifteenth viewpoint, the base material, the electroless plating base layer according to the thirteenth viewpoint formed on the base material, and the metal plating film according to the fourteenth viewpoint formed on the electroless plating base layer. The present invention relates to a metal-coated base material.
As a sixteenth viewpoint, the present invention relates to a method for producing a metal film base material, which comprises the following steps A to C.
Step A: A step of applying the photosensitive base material according to any one of the first to twelfth viewpoints onto a base material to provide a base layer.
Step B: A step of forming a base layer of a desired pattern by photolithography,
Step C: A step of immersing a base material having a patterned base layer in an electroless plating bath to form a metal plating film.
本発明の感光性下地剤は、基材上に塗布し、マスクを介してフォトリソグラフィーを実施することで容易にパターン化された無電解金属めっきの下地層を形成することができる。
また、本発明の感光性下地剤は、従来、金属めっき膜との密着性を高めるために基材上に形成されていたプライマー層を形成せずとも、基材との密着性に優れる下地層を形成することができる。さらに、本発明の感光性下地剤は、μmオーダーのパターン化されためっき下地層を形成することができ、各種配線技術にも好適に使用することができる。
特に本発明の感光性下地剤は、パラジウム等の金属微粒子に配位結合してアンミン錯体を形成し得るアミノ基を有する化合物の配合により、下地剤中の金属微粒子の分散安定性を向上でき、さらに、同時に添加した多官能チオールが架橋剤としてだけでなく連鎖移動剤としての役割をも担うことで、フォトリソグラフィー時に高感度で優れた現像性を有するパターン化された無電解金属めっきの下地層を形成することができる。
また本発明の感光性下地剤から形成された無電解金属めっきの下地層は、無電解めっき浴に浸漬するだけで、容易に金属めっき膜を形成でき、基材と下地層、そして金属めっき膜とを備える金属被膜基材を容易に得ることができる。
そして上記金属めっき膜は、下層の下地層との密着性に優れる。
すなわち、本発明の感光性下地剤を用いて基材上に下地層を形成することにより、いわば基材との密着性に優れた金属めっき膜を形成することができる。
さらに、本発明の上記感光性下地剤上に金属めっき膜を形成した際、その裏面は黒色を呈するため、これらをガラス基板等の透明基材上に形成した際に、画像視認性の高い透明電極としての使用を期待できる。The photosensitive base material of the present invention can be easily formed into a patterned electroless metal plating base layer by applying it on a base material and performing photolithography through a mask.
Further, the photosensitive base material of the present invention has an excellent adhesion to the base material without forming a primer layer which was conventionally formed on the base material in order to improve the adhesion to the metal plating film. Can be formed. Further, the photosensitive base material of the present invention can form a patterned plating base layer on the order of μm, and can be suitably used for various wiring techniques.
In particular, the photosensitive base material of the present invention can improve the dispersion stability of the metal fine particles in the base material by blending a compound having an amino group capable of coordinating and bonding to metal fine particles such as palladium to form an ammine complex. Furthermore, the polyfunctional thiol added at the same time plays a role not only as a cross-linking agent but also as a chain transfer agent, so that a patterned electroless metal plating base layer having high sensitivity and excellent developability during photolithography. Can be formed.
Further, the electroless metal plating base layer formed from the photosensitive base material of the present invention can easily form a metal plating film simply by immersing it in an electroless plating bath, and the base material, the base layer, and the metal plating film can be easily formed. A metal-coated base material comprising the above can be easily obtained.
The metal plating film has excellent adhesion to the underlying layer.
That is, by forming the base layer on the base material using the photosensitive base material of the present invention, it is possible to form a metal plating film having excellent adhesion to the base material, so to speak.
Furthermore, when a metal plating film is formed on the photosensitive substrate of the present invention, the back surface thereof is black, so that when these are formed on a transparent substrate such as a glass substrate, the image is highly visible and transparent. Expected to be used as an electrode.
[下地剤]
<(a)ハイパーブランチポリマー>
本発明の感光性下地剤に用いられる(a)ハイパーブランチポリマーは、アンモニウム基を分子末端に有し且つ重量平均分子量が1,000〜5,000,000であるポリマーであり、具体的には下記式[1]で表されるハイパーブランチポリマーが挙げられる。
前記式[1]中、R1は、それぞれ独立して水素原子又はメチル基を表す。
また、R2乃至R4は、それぞれ独立して、水素原子、炭素原子数1乃至20の直鎖状、枝分かれ状又は環状のアルキル基、炭素原子数7乃至20のアリールアルキル基、又は−(CH2CH2O)mR5(式中、R5は水素原子又はメチル基を表し、mは2乃至100の任意の整数を表す。)を表す。上記アルキル基及びアリールアルキル基は、アルコキシ基、ヒドロキシ基、アンモニウム基、カルボキシ基又はシアノ基で置換されていてもよい。また、R2乃至R4のうちの2つの基が一緒になって、直鎖状、枝分かれ状又は環状のアルキレン基を表すか、又はR2乃至R4並びにそれらが結合する窒素原子が一緒になって環を形成してもよい。
またX−は陰イオンを表し、nは繰り返し単位構造の数であって、5乃至100,000の整数を表す。[Base material]
<(A) Hyperbranched polymer>
The (a) hyperbranched polymer used in the photosensitive base material of the present invention is a polymer having an ammonium group at the molecular terminal and having a weight average molecular weight of 1,000 to 5,000,000, specifically. Examples thereof include hyperbranched polymers represented by the following formula [1].
In the above formula [1], R 1 independently represents a hydrogen atom or a methyl group.
Further, R 2 to R 4 are independently hydrogen atoms, linear, branched or cyclic alkyl groups having 1 to 20 carbon atoms, arylalkyl groups having 7 to 20 carbon atoms, or-(. CH 2 CH 2 O) m R 5 (in the formula, R 5 represents a hydrogen atom or a methyl group, and m represents an arbitrary integer from 2 to 100). The alkyl group and arylalkyl group may be substituted with an alkoxy group, a hydroxy group, an ammonium group, a carboxy group or a cyano group. Also, two groups of R 2 to R 4 together represent a linear, branched or cyclic alkylene group, or R 2 to R 4 and the nitrogen atom to which they are attached together. May form a ring.
Further, X − represents an anion, n is the number of repeating unit structures, and represents an integer of 5 to 100,000.
上記R2乃至R4における炭素原子数1乃至20の直鎖状のアルキル基としては、メチル基、エチル基、n−プロピル基、n−ブチル基、n−ペンチル基、n−ヘキシル基、n−ヘプチル基、n−オクチル基、n−ノニル基、n−デシル基、n−ウンデシル基、n−ドデシル基、n−トリデシル基、n−テトラデシル基、n−ペンタデシル基、n−ヘキサデシル基、n−ヘプタデシル基、n−オクタデシル基、n−ノナデシル基、n−エイコシル基等が挙げられ、下地剤が無電解めっき液に溶出しにくい点で、炭素原子数8以上の基が好ましく、特にn−オクチル基が好ましい。枝分かれ状のアルキル基としては、イソプロピル基、イソブチル基、sec−ブチル基、tert−ブチル基等が挙げられる。環状のアルキル基としては、シクロペンチル環、シクロヘキシル環構造を有する基等が挙げられる。
またR2乃至R4における炭素原子数7乃至20のアリールアルキル基としては、ベンジル基、フェネチル基等が挙げられる。
さらに、R2乃至R4のうちの2つの基が一緒になった直鎖状のアルキレン基としては、メチレン基、エチレン基、トリメチレン基、テトラメチレン基、ヘキサメチレン基等が挙げられる。枝分かれ状のアルキレン基としては、メチルエチレン基、ブタン−1,3−ジイル基、2−メチルプロパン−1,3−ジイル基等が挙げられる。環状のアルキレン基としては、炭素原子数3乃至30の単環式、多環式、架橋環式の環状構造の脂環式脂肪族基が挙げられる。具体的には、炭素原子数4以上のモノシクロ、ビシクロ、トリシクロ、テトラシクロ、ペンタシクロ構造等を有する基を挙げることができる。これらアルキレン基は基中に窒素原子、硫黄原子又は酸素原子を含んでいてもよい。
そして、式[1]で表される構造でR2乃至R4並びにそれらと結合する窒素原子が一緒になって形成する環は、環中に窒素原子、硫黄原子又は酸素原子を含んでいてもよく、例えばピリジン環、ピリミジン環、ピラジン環、キノリン環、ビピリジル環等が挙げられる。
これらR2乃至R4の組合せとしては、例えば、[メチル基、メチル基、メチル基]、[メチル基、メチル基、エチル基]、[メチル基、メチル基、n−ブチル基]、[メチル基、メチル基、n−ヘキシル基]、[メチル基、メチル基、n−オクチル基]、[メチル基、メチル基、n−デシル基]、[メチル基、メチル基、n−ドデシル基]、[メチル基、メチル基、n−テトラデシル基]、[メチル基、メチル基、n−ヘキサデシル基]、[メチル基、メチル基、n−オクタデシル基]、[エチル基、エチル基、エチル基]、[n−ブチル基、n−ブチル基、n−ブチル基]、[n−ヘキシル基、n−ヘキシル基、n−ヘキシル基]、[n−オクチル基、n−オクチル基、n−オクチル基]等が挙げられ、中でも[メチル基、メチル基、n−オクチル基]、[n−オクチル基、n−オクチル基、n−オクチル基]の組合せが好ましい。
またX−の陰イオンとして好ましくはハロゲン原子、PF6 −、BF4 −又はパーフルオロアルカンスルホナートが挙げられる。Examples of the linear alkyl group having 1 to 20 carbon atoms in R 2 to R 4 include a methyl group, an ethyl group, an n-propyl group, an n-butyl group, an n-pentyl group, an n-hexyl group and n. -Heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group, n-dodecyl group, n-tridecyl group, n-tetradecyl group, n-pentadecyl group, n-hexadecyl group, n -Heptadecyl group, n-octadecyl group, n-nonadecil group, n-eicosyl group and the like can be mentioned, and a group having 8 or more carbon atoms is preferable, and n- is particularly preferable in that the base material is difficult to elute into the electroless plating solution. An octyl group is preferred. Examples of the branched alkyl group include an isopropyl group, an isobutyl group, a sec-butyl group, a tert-butyl group and the like. Examples of the cyclic alkyl group include a cyclopentyl ring and a group having a cyclohexyl ring structure.
Examples of the arylalkyl group having 7 to 20 carbon atoms in R 2 to R 4 include a benzyl group and a phenethyl group.
Further, examples of the linear alkylene group in which two groups of R 2 to R 4 are combined include a methylene group, an ethylene group, a trimethylene group, a tetramethylene group, a hexamethylene group and the like. Examples of the branched alkylene group include a methylethylene group, a butane-1,3-diyl group, a 2-methylpropane-1,3-diyl group and the like. Examples of the cyclic alkylene group include alicyclic aliphatic groups having a cyclic structure having a monocyclic, polycyclic, or crosslinked cyclic structure having 3 to 30 carbon atoms. Specifically, a group having a monocyclo, bicyclo, tricyclo, tetracyclo, pentacyclo structure or the like having 4 or more carbon atoms can be mentioned. These alkylene groups may contain a nitrogen atom, a sulfur atom or an oxygen atom in the group.
Then, the ring nitrogen atom bonded with R 2 to R 4 as well as their a structure represented by the formula [1] is formed together, the nitrogen atom in the ring, also contain sulfur atom or oxygen atom Frequently, for example, a pyridine ring, a pyrimidine ring, a pyrazine ring, a quinoline ring, a bipyridyl ring and the like can be mentioned.
Examples of the combination of R 2 to R 4 include [methyl group, methyl group, methyl group], [methyl group, methyl group, ethyl group], [methyl group, methyl group, n-butyl group], and [methyl group]. Group, methyl group, n-hexyl group], [methyl group, methyl group, n-octyl group], [methyl group, methyl group, n-decyl group], [methyl group, methyl group, n-dodecyl group], [Methyl group, methyl group, n-tetradecyl group], [methyl group, methyl group, n-hexadecyl group], [methyl group, methyl group, n-octadecyl group], [ethyl group, ethyl group, ethyl group], [N-butyl group, n-butyl group, n-butyl group], [n-hexyl group, n-hexyl group, n-hexyl group], [n-octyl group, n-octyl group, n-octyl group] Etc., and among them, a combination of [methyl group, methyl group, n-octyl group], [n-octyl group, n-octyl group, n-octyl group] is preferable.
The X - is preferably a halogen atom anion, PF 6 -, BF 4 - or perfluoroalkane sulfonate and the like.
上記式[1]中、A1は下記式[2]で表される構造を表す。
上記式[2]中、A2はエーテル結合又はエステル結合を含んでいてもよい炭素原子数1乃至30の直鎖状、枝分かれ状又は環状のアルキレン基を表す。
Y1乃至Y4は、それぞれ独立して、水素原子、炭素原子数1乃至20のアルキル基、炭素原子数1乃至20のアルコキシ基、ニトロ基、ヒドロキシ基、アミノ基、カルボキシ基又はシアノ基を表す。In the above formula [1], A 1 represents a structure represented by the following formula [2].
In the above formula [2], A 2 represents a linear, branched or cyclic alkylene group having 1 to 30 carbon atoms which may contain an ether bond or an ester bond.
Y 1 to Y 4 independently have a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, a nitro group, a hydroxy group, an amino group, a carboxy group or a cyano group. Represent.
上記A2のアルキレン基の具体例としては、メチレン基、エチレン基、トリメチレン基、テトラメチレン基、ヘキサメチレン基等の直鎖状アルキレン基、メチルエチレン基、ブタン−1,3−ジイル基、2−メチルプロパン−1,3−ジイル基等の枝分かれ状アルキレン基が挙げられる。また環状アルキレン基としては、炭素原子数3乃至30の単環式、多環式及び架橋環式の環状構造の脂環式脂肪族基が挙げられる。具体的には、炭素原子数4以上のモノシクロ、ビシクロ、トリシクロ、テトラシクロ、ペンタシクロ構造等を有する基を挙げることができる。例えば、下記に脂環式脂肪族基のうち、脂環式部分の構造例(a)乃至(s)を示す。
Specific examples of the alkylene group of A 2 include linear alkylene groups such as methylene group, ethylene group, trimethylene group, tetramethylene group and hexamethylene group, methylethylene group, butane-1,3-diyl group and 2 Examples thereof include branched alkylene groups such as −methylpropane-1,3-diyl group. Examples of the cyclic alkylene group include alicyclic aliphatic groups having a cyclic structure having a monocyclic, polycyclic or crosslinked cyclic structure having 3 to 30 carbon atoms. Specifically, a group having a monocyclo, bicyclo, tricyclo, tetracyclo, pentacyclo structure or the like having 4 or more carbon atoms can be mentioned. For example, structural examples (a) to (s) of the alicyclic portion of the alicyclic aliphatic group are shown below.
また上記式[2]中のY1乃至Y4の炭素原子数1乃至20のアルキル基としては、メチル基、エチル基、イソプロピル基、n−ペンチル基、シクロヘキシル基等が挙げられる。炭素原子数1乃至20のアルコキシ基としては、メトキシ基、エトキシ基、イソプロポキシ基、n−ペンチルオキシ基、シクロヘキシルオキシ基等が挙げられる。Y1乃至Y4としては、水素原子又は炭素原子数1乃至20のアルキル基が好ましい。Examples of the alkyl group of the formula [2] in the Y 1 to Y 4 of 1 to 20 carbon atoms, a methyl group, an ethyl group, an isopropyl group, n- pentyl group, a cyclohexyl group and the like. Examples of the alkoxy group having 1 to 20 carbon atoms include a methoxy group, an ethoxy group, an isopropoxy group, an n-pentyloxy group, a cyclohexyloxy group and the like. The Y 1 to Y 4, a hydrogen atom or an alkyl group having 1 to 20 carbon atoms are preferred.
好ましくは、本発明に用いられるハイパーブランチポリマーとしては、下記式[3]で表されるハイパーブランチポリマーが挙げられる。
前記式[3]中、R1、R2乃至R4及びnは上記と同じ意味を表す。Preferably, the hyperbranched polymer used in the present invention includes a hyperbranched polymer represented by the following formula [3].
In the above formula [3], R 1 , R 2 to R 4 and n have the same meanings as described above.
本発明で用いる上記アンモニウム基を分子末端に有するハイパーブランチポリマーは、例えば、分子末端にハロゲン原子を有するハイパーブランチポリマーにアミン化合物を反応させることによって得ることができる。
なお、分子末端にハロゲン原子を有するハイパーブランチポリマーは、国際公開第2008/029688号パンフレットの記載に従い、ジチオカルバメート基を分子末端に有するハイパーブランチポリマーより製造することができる。該ジチオカルバメート基を分子末端に有するハイパーブランチポリマーは、市販品を用いることができ、日産化学工業(株)製のハイパーテック(登録商標)HPS−200等を好適に使用可能である。The hyperbranched polymer having the ammonium group at the molecular end used in the present invention can be obtained, for example, by reacting an amine compound with the hyperbranched polymer having a halogen atom at the molecular end.
The hyperbranched polymer having a halogen atom at the molecular end can be produced from the hyperbranched polymer having a dithiocarbamate group at the molecular end in accordance with the description in Pamphlet No. 2008/029688. As the hyperbranched polymer having the dithiocarbamate group at the molecular terminal, a commercially available product can be used, and Hypertech (registered trademark) HPS-200 manufactured by Nissan Chemical Industries, Ltd. can be preferably used.
本反応で使用できるアミン化合物は、第一級アミンとしては、メチルアミン、エチルアミン、n−プロピルアミン、イソプロピルアミン、n−ブチルアミン、イソブチルアミン、sec−ブチルアミン、tert−ブチルアミン、n−ペンチルアミン、n−ヘキシルアミン、n−ヘプチルアミン、n−オクチルアミン、n−ノニルアミン、n−デシルアミン、n−ウンデシルアミン、n−ドデシルアミン、n−トリデシルアミン、n−テトラデシルアミン、n−ペンタデシルアミン、n−ヘキサデシルアミン、n−ヘプタデシルアミン、n−オクタデシルアミン、n−ノナデシルアミン、n−エイコシルアミン等の脂肪族アミン;シクロペンチルアミン、シクロヘキシルアミン等の脂環式アミン;ベンジルアミン、フェネチルアミン等のアラルキルアミン;アニリン、p−n−ブチルアニリン、p−tert−ブチルアニリン、p−n−オクチルアニリン、p−n−デシルアニリン、p−n−ドデシルアニリン、p−n−テトラデシルアニリンなどのアニリン類、1−ナフチルアミン、2−ナフチルアミンなどのナフチルアミン類、1−アミノアントラセン、2−アミノアントラセンなどのアミノアントラセン類、1−アミノアントラキノンなどのアミノアントラキノン類、4−アミノビフェニル、2−アミノビフェニルなどのアミノビフェニル類、2−アミノフルオレン、1−アミノ−9−フルオレノン、4−アミノ−9−フルオレノンなどのアミノフルオレン類、5−アミノインダンなどのアミノインダン類、5−アミノイソキノリンなどのアミノイソキノリン類、9−アミノフェナントレンなどのアミノフェナントレン類等の芳香族アミンが挙げられる。更に、N−(tert−ブトキシカルボニル)−1,2−エチレンジアミン、N−(tert−ブトキシカルボニル)−1,3−プロピレンジアミン、N−(tert−ブトキシカルボニル)−1,4−ブチレンジアミン、N−(tert−ブトキシカルボニル)−1,5−ペンタメチレンジアミン、N−(tert−ブトキシカルボニル)−1,6−ヘキサメチレンジアミン、N−(2−ヒドロキシエチル)アミン、N−(3−ヒドロキシプロピル)アミン、N−(2−メトキシエチル)アミン、N−(2−エトキシエチル)アミン等のアミン化合物が挙げられる。 The amine compounds that can be used in this reaction include methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, n-pentylamine, and n as primary amines. -Hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine, n-undecylamine, n-dodecylamine, n-tridecylamine, n-tetradecylamine, n-pentadecylamine , N-Hexadecylamine, n-heptadecylamine, n-octadecylamine, n-nonadecilamine, n-eicosylamine and other aliphatic amines; cyclopentylamine, cyclohexylamine and other alicyclic amines; benzylamine, phenethylamine and the like. Aralkylamines; aniline, pn-butylaniline, p-tert-butylaniline, pn-octylaniline, pn-decylaniline, pn-dodecylaniline, pn-tetradecylaniline, etc. Anilines, naphthylamines such as 1-naphthylamine and 2-naphthylamine, aminoanthracenes such as 1-aminoanthracene and 2-aminoanthracene, aminoanthraquinones such as 1-aminoanthraquinone, 4-aminobiphenyl, 2-aminobiphenyl and the like. Aminobiphenyls, 2-aminofluorene, 1-amino-9-fluorenone, 4-amino-9-fluorenone and other aminofluorenes, 5-aminoindane and other aminoindans, 5-aminoisoquinolin and other aminoisoquinolins. , Aromatic amines such as aminophenanthrenes such as 9-aminophenanthrene, and the like. Furthermore, N- (tert-butoxycarbonyl) -1,2-ethylenediamine, N- (tert-butoxycarbonyl) -1,3-propylenediamine, N- (tert-butoxycarbonyl) -1,4-butylenediamine, N -(Tart-butoxycarbonyl) -1,5-pentamethylenediamine, N- (tert-butoxycarbonyl) -1,6-hexamethylenediamine, N- (2-hydroxyethyl) amine, N- (3-hydroxypropyl) ) Amines, N- (2-methoxyethyl) amines, N- (2-ethoxyethyl) amines and other amine compounds can be mentioned.
第二級アミンとしては、ジメチルアミン、ジエチルアミン、ジ−n−プロピルアミン、ジイソプロピルアミン、ジ−n−ブチルアミン、ジイソブチルアミン、ジ−sec−ブチルアミン、ジ−n−ペンチルアミン、エチルメチルアミン、メチル−n−プロピルアミン、メチル−n−ブチルアミン、メチル−n−ペンチルアミン、エチルイソプロピルアミン、エチル−n−ブチルアミン、エチル−n−ペンチルアミン、メチル−n−オクチルアミン、メチル−n−デシルアミン、メチル−n−ドデシルアミン、メチル−n−テトラデシルアミン、メチル−n−ヘキサデシルアミン、メチル−n−オクタデシルアミン、エチルイソプロピルアミン、エチル−n−オクチルアミン、ジ−n−ヘキシルアミン、ジ−n−オクチルアミン、ジ−n−ドデシルアミン、ジ−n−ヘキサデシルアミン、ジ−n−オクタデシルアミン等の脂肪族アミン;ジシクロヘキシルアミン等の脂環式アミン;ジベンジルアミン等のアラルキルアミン;ジフェニルアミン等の芳香族アミン;フタルイミド、ピロール、ピペリジン、ピペラジン、イミダゾール等の窒素含有複素環式化合物が挙げられる。更に、ビス(2−ヒドロキシエチル)アミン、ビス(3−ヒドロキシプロピル)アミン、ビス(2−エトキシエチル)アミン、ビス(2−プロポキシエチル)アミン等が挙げられる。 Secondary amines include dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, di-n-pentylamine, ethylmethylamine, and methyl-. n-propylamine, methyl-n-butylamine, methyl-n-pentylamine, ethylisopropylamine, ethyl-n-butylamine, ethyl-n-pentylamine, methyl-n-octylamine, methyl-n-decylamine, methyl- n-dodecylamine, methyl-n-tetradecylamine, methyl-n-hexadecylamine, methyl-n-octadecylamine, ethylisopropylamine, ethyl-n-octylamine, di-n-hexylamine, di-n- Aliper amines such as octylamine, di-n-dodecylamine, di-n-hexadecylamine, di-n-octadecylamine; alicyclic amines such as dicyclohexylamine; aralkylamines such as dibenzylamine; Aromatic amines; nitrogen-containing heterocyclic compounds such as phthalimide, pyrrole, piperidine, piperazine, imidazole and the like can be mentioned. Further, bis (2-hydroxyethyl) amine, bis (3-hydroxypropyl) amine, bis (2-ethoxyethyl) amine, bis (2-propoxyethyl) amine and the like can be mentioned.
第三級アミンとしては、トリメチルアミン、トリエチルアミン、トリ−n−プロピルアミン、トリ−n−ブチルアミン、トリ−n−ペンチルアミン、トリ−n−ヘキシルアミン、トリ−n−オクチルアミン、トリ−n−ドデシルアミン、ジメチルエチルアミン、ジメチル−n−ブチルアミン、ジメチル−n−ヘキシルアミン、ジメチル−n−オクチルアミン、ジメチル−n−デシルアミン、ジエチル−n−デシルアミン、ジメチル−n−ドデシルアミン、ジメチル−n−テトラデシルアミン、ジメチル−n−ヘキサデシルアミン、ジメチル−n−オクタデシルアミン、ジメチル−n−エイコシルアミン等の脂肪族アミン;ピリジン、ピラジン、ピリミジン、キノリン、1−メチルイミダゾール、4,4’−ビピリジル、4−メチル−4,4’−ビピリジル等の窒素含有複素環式化合物が挙げられる。 Examples of tertiary amines include trimethylamine, triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-pentylamine, tri-n-hexylamine, tri-n-octylamine, and tri-n-dodecyl. Amine, dimethylethylamine, dimethyl-n-butylamine, dimethyl-n-hexylamine, dimethyl-n-octylamine, dimethyl-n-decylamine, diethyl-n-decylamine, dimethyl-n-dodecylamine, dimethyl-n-tetradecyl Aliphatic amines such as amines, dimethyl-n-hexadecylamines, dimethyl-n-octadecylamines, dimethyl-n-eicosylamines; pyridine, pyrazine, pyrimidine, quinoline, 1-methylimidazole, 4,4'-bipyridyl, Examples thereof include nitrogen-containing heterocyclic compounds such as 4-methyl-4,4'-bipyridyl.
これらの反応で使用できるアミン化合物の使用量は、分子末端にハロゲン原子を有するハイパーブランチポリマーのハロゲン原子1モルに対して0.1〜20モル当量、好ましくは0.5〜10モル当量、より好ましくは1〜5モル当量であればよい。 The amount of the amine compound that can be used in these reactions is 0.1 to 20 molar equivalents, preferably 0.5 to 10 molar equivalents, with respect to 1 mol of the halogen atom of the hyperbranched polymer having a halogen atom at the molecular terminal. It may be preferably 1 to 5 molar equivalents.
分子末端にハロゲン原子を有するハイパーブランチポリマーとアミン化合物との反応は、水又は有機溶媒中で、塩基の存在下又は非存在下で行なうことができる。使用する溶媒は、分子末端にハロゲン原子を有するハイパーブランチポリマーとアミン化合物を溶解可能なものが好ましい。さらに、分子末端にハロゲン原子を有するハイパーブランチポリマーとアミン化合物を溶解可能であるが、分子末端にアンモニウム基を有するハイパーブランチポリマーを溶解しない溶媒であれば、単離が容易となりさらに好適である。
本反応で使用できる溶媒としては、本反応の進行を著しく阻害しないものであればよく、水;イソプロパノール等のアルコール類;酢酸等の有機酸類;ベンゼン、トルエン、キシレン、エチルベンゼン、1,2−ジクロロベンゼン等の芳香族炭化水素類;テトラヒドロフラン(THF)、ジエチルエーテル等のエーテル類;アセトン、メチルエチルケトン(MEK)、メチルイソブチルケトン(MIBK)、シクロヘキサノン等のケトン類;クロロホルム、ジクロロメタン、1,2−ジクロロエタン等のハロゲン化物;n−ヘキサン、n−ヘプタン、シクロヘキサン等の脂肪族炭化水素類;N,N−ジメチルホルムアミド(DMF)、N,N−ジメチルアセトアミド、N−メチル−2−ピロリドン(NMP)等のアミド類が使用できる。これらの溶媒は1種を用いてもよいし、2種以上を混合して用いてもよい。また、使用量は、分子末端にハロゲン原子を有するハイパーブランチポリマーの質量に対して0.2〜1,000倍質量、好ましくは1〜500倍質量、より好ましくは5〜100倍質量、最も好ましくは5〜50倍質量の溶媒を使用することが好ましい。The reaction between the hyperbranched polymer having a halogen atom at the end of the molecule and the amine compound can be carried out in water or an organic solvent in the presence or absence of a base. The solvent used is preferably one capable of dissolving a hyperbranched polymer having a halogen atom at the molecular terminal and an amine compound. Further, a hyperbranched polymer having a halogen atom at the molecular end and an amine compound can be dissolved, but a solvent that does not dissolve the hyperbranched polymer having an ammonium group at the molecular end is more preferable because isolation is easy.
The solvent that can be used in this reaction may be any solvent that does not significantly inhibit the progress of this reaction, and is water; alcohols such as isopropanol; organic acids such as acetic acid; benzene, toluene, xylene, ethylbenzene, 1,2-di. Aromatic hydrocarbons such as chlorobenzene; ethers such as tetrahydrofuran (THF) and diethyl ether; ketones such as acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK) and cyclohexanone; chloroform, dichloromethane, 1,2-dichloroethane Halogens such as n-hexane, n-heptane, cyclohexane and other aliphatic hydrocarbons; N, N-dimethylformamide (DMF), N, N-dimethylacetamide, N-methyl-2-pyrrolidone (NMP) and the like. Amids can be used. One of these solvents may be used, or two or more of these solvents may be mixed and used. The amount used is 0.2 to 1,000 times by mass, preferably 1 to 500 times by mass, more preferably 5 to 100 times by mass, most preferably, with respect to the mass of the hyperbranched polymer having a halogen atom at the molecular terminal. It is preferable to use a solvent having a mass of 5 to 50 times.
好適な塩基としては一般に、アルカリ金属水酸化物及びアルカリ土類金属水酸化物(例えば水酸化ナトリウム、水酸化カリウム、水酸化カルシウム)、アルカリ金属酸化物及びアルカリ土類金属酸化物(例えば酸化リチウム、酸化カルシウム)、アルカリ金属水素化物及びアルカリ土類金属水素化物(例えば水素化ナトリウム、水素化カリウム、水素化カルシウム)、アルカリ金属アミド(例えばナトリウムアミド)、アルカリ金属炭酸塩及びアルカリ土類金属炭酸塩(例えば炭酸リチウム、炭酸ナトリウム、炭酸カリウム、炭酸カルシウム)、アルカリ金属重炭酸塩(例えば重炭酸ナトリウム)等の無機化合物、並びにアルカリ金属アルキル、アルキルマグネシウムハロゲン化物、アルカリ金属アルコキシド、アルカリ土類金属アルコキシド、ジメトキシマグネシウム等の有機金属化合物が使用される。特に好ましいのは、炭酸カリウム及び炭酸ナトリウムである。また、使用量は、分子末端にハロゲン原子を有するハイパーブランチポリマーのハロゲン原子1モルに対して0.2〜10モル当量、好ましくは0.5〜10モル当量、最も好ましくは1〜5モル当量の塩基を使用することが好ましい。 Suitable bases are generally alkali metal hydroxides and alkaline earth metal hydroxides (eg sodium hydroxide, potassium hydroxide, calcium hydroxide), alkali metal oxides and alkaline earth metal oxides (eg lithium oxide). , Calcium oxide), alkali metal hydrides and alkaline earth metal hydrides (eg sodium hydride, potassium hydride, calcium hydride), alkali metal amides (eg sodium amides), alkali metal carbonates and alkaline earth metal carbonates. Inorganic compounds such as salts (eg lithium carbonate, sodium carbonate, potassium carbonate, calcium carbonate), alkali metal bicarbonates (eg sodium bicarbonate), as well as alkali metal alkyls, alkylmagnesium halides, alkali metal alkoxides, alkaline earth metals. Organic metal compounds such as alkoxides and dimethoxymagnesium are used. Particularly preferred are potassium carbonate and sodium carbonate. The amount used is 0.2 to 10 molar equivalents, preferably 0.5 to 10 molar equivalents, most preferably 1 to 5 molar equivalents, relative to 1 mol of the halogen atom of the hyperbranched polymer having a halogen atom at the molecular terminal. It is preferable to use the base of.
この反応では反応開始前に反応系内の酸素を十分に除去することが好ましく、窒素、アルゴン等の不活性気体で系内を置換するとよい。反応条件としては、反応時間は0.01〜100時間、反応温度は0〜300℃から、適宜選択される。好ましくは反応時間が0.1〜72時間で、反応温度が20〜150℃である。 In this reaction, it is preferable to sufficiently remove oxygen in the reaction system before the start of the reaction, and it is preferable to replace the inside of the system with an inert gas such as nitrogen or argon. As the reaction conditions, the reaction time is appropriately selected from 0.01 to 100 hours and the reaction temperature is 0 to 300 ° C. The reaction time is preferably 0.1 to 72 hours and the reaction temperature is 20 to 150 ° C.
第三級アミンを用いた場合、塩基の存在/非存在に関わらず、式[1]で表されるハイパーブランチポリマーを得ることができる。
塩基の非存在下で、第一級アミン又は第二級アミン化合物と分子末端にハロゲン原子を有するハイパーブランチポリマーを反応させた場合、それぞれに対応するハイパーブランチポリマーの末端第二級アミン及び第三級アミンがプロトン化されたアンモニウム基末端のハイパーブランチポリマーが得られる。また、塩基を用いて反応を行った場合においても、有機溶媒中で塩化水素、臭化水素、ヨウ化水素等の酸の水溶液と混合することにより、対応するハイパーブランチポリマーの末端第二級アミン及び第三級アミンがプロトン化されたアンモニウム基末端のハイパーブランチポリマーが得られる。When a tertiary amine is used, a hyperbranched polymer represented by the formula [1] can be obtained regardless of the presence / absence of a base.
When a primary amine or secondary amine compound is reacted with a hyperbranched polymer having a halogen atom at the molecular terminal in the absence of a base, the corresponding hyperbranched polymer's terminal secondary amine and tertiary are used. An ammonium group-terminated hyperbranched polymer in which a primary amine is protonated is obtained. In addition, even when the reaction is carried out using a base, the terminal secondary amine of the corresponding hyperbranched polymer can be mixed with an aqueous solution of an acid such as hydrogen chloride, hydrogen bromide, or hydrogen iodide in an organic solvent. And an ammonium group-terminated hyperbranched polymer in which a tertiary amine is protonated is obtained.
前記ハイパーブランチポリマーは、ゲル浸透クロマトグラフィーによるポリスチレン換算で測定される重量平均分子量Mwが1,000〜5,000,000であり、より好ましくは2,000〜200,000であり、最も好ましくは3,000〜100,000である。また、分散度Mw(重量平均分子量)/Mn(数平均分子量)としては1.0〜7.0であり、好ましくは1.1〜6.0であり、より好ましくは1.2〜5.0である。 The hyperbranched polymer has a weight average molecular weight Mw measured by gel permeation chromatography in terms of polystyrene of 1,000 to 5,000,000, more preferably 2,000 to 200,000, and most preferably 2,000 to 200,000. It is 3,000 to 100,000. The dispersity Mw (weight average molecular weight) / Mn (number average molecular weight) is 1.0 to 7.0, preferably 1.1 to 6.0, and more preferably 1.2 to 5. It is 0.
<(b)金属微粒子>
本発明の感光性下地剤に用いられる(b)金属微粒子としては特に限定されず、金属種としては鉄(Fe)、コバルト(Co)、ニッケル(Ni)、銅(Cu)、パラジウム(Pd)、銀(Ag)、スズ(Sn)、白金(Pt)及び金(Au)並びにこれらの合金が挙げられ、これらの金属の1種類でもよいし2種以上の併用でも構わない。中でも好ましい金属微粒子としてはパラジウム微粒子が挙げられる。なお、金属微粒子として、前記金属の酸化物を用いてもよい。<(B) Metal fine particles>
The (b) metal fine particles used in the photosensitive base material of the present invention are not particularly limited, and the metal species include iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and palladium (Pd). , Silver (Ag), Tin (Sn), Platinum (Pt) and Gold (Au) and alloys thereof, and one kind of these metals may be used, or two or more kinds thereof may be used in combination. Among them, palladium fine particles are mentioned as preferable metal fine particles. The metal oxide may be used as the metal fine particles.
前記金属微粒子は、例えば金属塩の水溶液を高圧水銀灯により光照射する方法や、該水溶液に還元作用を有する化合物(所謂還元剤)を添加する方法等により、金属イオンを還元することによって得られる。例えば、上記ハイパーブランチポリマーを溶解した溶液に金属塩の水溶液を添加してこれに紫外線を照射する、又は、該ハイパーブランチポリマー溶液に金属塩の水溶液及び還元剤を添加するなどして、金属イオンを還元することにより、ハイパーブランチポリマーと金属微粒子の複合体を形成させながら、ハイパーブランチポリマー及び金属微粒子を含む下地剤を調製することができる。 The metal fine particles can be obtained by reducing metal ions by, for example, a method of irradiating an aqueous solution of a metal salt with light by a high-pressure mercury lamp, a method of adding a compound having a reducing action (so-called reducing agent) to the aqueous solution, or the like. For example, a metal ion is added by adding an aqueous solution of a metal salt to the solution in which the hyperbranched polymer is dissolved and irradiating the solution with ultraviolet rays, or by adding an aqueous solution of the metal salt and a reducing agent to the hyperbranched polymer solution. By reducing the above, a base material containing the hyperbranched polymer and the metal fine particles can be prepared while forming a complex of the hyperbranched polymer and the metal fine particles.
前記金属塩としては、塩化金酸、硝酸銀、硫酸銅、硝酸銅、酢酸銅、塩化スズ、塩化第一白金、塩化白金酸、Pt(dba)2[dba=ジベンジリデンアセトン]、Pt(cod)2[cod=1,5−シクロオクタジエン]、Pt(CH3)2(cod)、塩化パラジウム、酢酸パラジウム(Pd(OC(=O)CH3)2)、硝酸パラジウム、Pd2(dba)3・CHCl3、Pd(dba)2、塩化ロジウム、酢酸ロジウム、塩化ルテニウム、酢酸ルテニウム、Ru(cod)(cot)[cot=シクロオクタトリエン]、塩化イリジウム、酢酸イリジウム、Ni(cod)2等が挙げられる。
前記還元剤としては、特に限定されるものではなく、種々の還元剤を用いることができ、得られる下地剤に含有させる金属種等により還元剤を選択することが好ましい。用いることができる還元剤としては、例えば、水素化ホウ素ナトリウム、水素化ホウ素カリウム等の水素化ホウ素金属塩;水素化アルミニウムリチウム、水素化アルミニウムカリウム、水素化アルミニウムセシウム、水素化アルミニウムベリリウム、水素化アルミニウムマグネシウム、水素化アルミニウムカルシウム等の水素化アルミニウム塩;ヒドラジン化合物;クエン酸及びその塩;コハク酸及びその塩;アスコルビン酸及びその塩;メタノール、エタノール、イソプロパノール、ポリオール等の第一級又は第二級アルコール類;トリメチルアミン、トリエチルアミン、ジイソプロピルエチルアミン、ジエチルメチルアミン、テトラメチルエチレンジアミン(TMEDA)、エチレンジアミン四酢酸(EDTA)等の第三級アミン類;ヒドロキシルアミン;トリ−n−プロピルホスフィン、トリ−n−ブチルホスフィン、トリシクロヘキシルホスフィン、トリベンジルホスフィン、トリフェニルホスフィン、トリエトキシホスフィン、1,2−ビス(ジフェニルホスフィノ)エタン(DPPE)、1,3−ビス(ジフェニルホスフィノ)プロパン(DPPP)、1,1’−ビス(ジフェニルホスフィノ)フェロセン(DPPF)、2,2’−ビス(ジフェニルホスフィノ)−1,1’−ビナフチル(BINAP)等のホスフィン類などが挙げられる。Examples of the metal salt include gold chloride acid, silver nitrate, copper sulfate, copper nitrate, copper acetate, tin chloride, first platinum chloride, platinum chloride acid, Pt (dba) 2 [dba = dibenzylidene acetone], Pt (cod). 2 [cod = 1,5-cyclooctadiene], Pt (CH 3 ) 2 (cod), palladium chloride, palladium acetate (Pd (OC (= O) CH 3 ) 2 ), palladium nitrate, Pd 2 (dba) 3. CHCl 3 , Pd (dba) 2 , rhodium chloride, rhodium acetate, ruthenium chloride, ruthenium acetate, Ru (cod) (cot) [cot = cyclooctatriene], iridium chloride, iridium acetate, Ni (cod) 2, etc. Can be mentioned.
The reducing agent is not particularly limited, and various reducing agents can be used, and it is preferable to select the reducing agent according to the metal species and the like contained in the obtained base material. Examples of the reducing agent that can be used include boron hydride metal salts such as sodium boron hydride and potassium boron hydride; aluminum lithium hydride, potassium aluminum hydride, aluminum cesium hydride, aluminum berylium hydride, and hydrogenation. Aluminum hydride salts such as aluminum magnesium and aluminum calcium hydride; hydrazine compounds; citric acid and its salts; succinic acid and its salts; ascorbic acid and its salts; primary or secondary such as methanol, ethanol, isopropanol and polyols. Class alcohols; tertiary amines such as trimethylamine, triethylamine, diisopropylethylamine, diethylmethylamine, tetramethylethylenediamine (TMEDA), ethylenediaminetetraacetic acid (EDTA); hydroxylamine; tri-n-propylphosphine, tri-n- Butylphosphine, tricyclohexylphosphine, tribenzylphosphine, triphenylphosphine, triethoxyphosphine, 1,2-bis (diphenylphosphino) ethane (DPPE), 1,3-bis (diphenylphosphino) propane (DPPP), 1 , 1'-bis (diphenylphosphino) ferrocene (DPPF), 2,2'-bis (diphenylphosphino) -1,1'-binaphthyl (BINAP) and other phosphines.
前記金属微粒子の平均粒径は1〜100nmが好ましい。該金属微粒子の平均粒径を100nm以下とすることで、表面積の減少が少なく十分な触媒活性が得られる。平均粒径としては、75nm以下が更に好ましく、1〜30nmが特に好ましい。 The average particle size of the metal fine particles is preferably 1 to 100 nm. By setting the average particle size of the metal fine particles to 100 nm or less, the surface area is not reduced and sufficient catalytic activity can be obtained. The average particle size is more preferably 75 nm or less, and particularly preferably 1 to 30 nm.
本発明の感光性下地剤における上記(a)ハイパーブランチポリマーの添加量は、上記(b)金属微粒子100質量部に対して50〜2,000質量部が好ましい。50質量部以上とすることで、上記金属微粒子を十分に分散させることができ、また2,000質量部以下とすることで、有機物含有量の増加に因る物性等の不具合を抑制することができる。より好ましくは、100〜1,000質量部である。 The amount of the (a) hyperbranched polymer added to the photosensitive base material of the present invention is preferably 50 to 2,000 parts by mass with respect to 100 parts by mass of the (b) metal fine particles. When the amount is 50 parts by mass or more, the metal fine particles can be sufficiently dispersed, and when the amount is 2,000 parts by mass or less, problems such as physical properties due to an increase in the organic matter content can be suppressed. it can. More preferably, it is 100 to 1,000 parts by mass.
<(c)末端が重合性不飽和結合である側鎖を有する高分子化合物>
本発明の感光性下地剤に用いられる(c)成分は、分子内に1個以上の末端が重合性不飽和結合である側鎖を有し、オキシアルキレン基を全繰り返し単位の100モルあたり15〜50モル有し且つ重量平均分子量が10,000〜100,000である重合性高分子化合物である。
このような末端が重合性不飽和結合である側鎖を有する高分子化合物としては、好ましくは分子内の2個以上の側鎖に(メタ)アクリロイル基を有する高分子化合物が挙げられ、中でも好ましくは分子内の3個以上の側鎖に(メタ)アクリロイル基を有し且つオキシアルキレン基を有する高分子化合物が挙げられる。
上記オキシアルキレン基としては、炭素原子数2乃至4のオキシアルキレン基が好ましく、中でもオキシエチレン基[−OCH2CH2−]又はオキシプロピレン基[−OCH2C(CH3)H−]が好ましい。オキシアルキレン基は複数個が連結したポリ(オキシアルキレン)基であってもよく、その場合、一種のオキシアルキレン基を単独で有していてもよく、或いは二種以上を組み合わせて有していてもよい。複数種のオキシアルキレン基を有する場合、それらの結合はブロック結合及びランダム結合の何れであってもよい。
なお、本発明では(メタ)アクリレート化合物とは、アクリレート化合物とメタクリレート化合物の両方をいう。例えば(メタ)アクリル酸は、アクリル酸とメタクリル酸をいう。<(C) Polymer compound having a side chain whose terminal is a polymerizable unsaturated bond>
The component (c) used in the photosensitive base material of the present invention has one or more side chains having a polymerizable unsaturated bond at the end in the molecule, and contains 15 oxyalkylene groups per 100 mol of all repeating units. It is a polymerizable polymer compound having ~ 50 mol and having a weight average molecular weight of 10,000 to 100,000.
Examples of such a polymer compound having a side chain having a polymerizable unsaturated bond at the end include a polymer compound having two or more side chains in the molecule having a (meth) acryloyl group, and among them are preferable. Examples of the polymer compound having a (meth) acryloyl group and an oxyalkylene group in three or more side chains in the molecule.
As the oxyalkylene group, an oxyalkylene group having 2 to 4 carbon atoms is preferable, and an oxyethylene group [-OCH 2 CH 2- ] or an oxypropylene group [-OCH 2 C (CH 3 ) H-] is preferable. .. The oxyalkylene group may be a poly (oxyalkylene) group in which a plurality of oxyalkylene groups are linked, and in that case, it may have one kind of oxyalkylene group alone, or it may have two or more kinds in combination. May be good. When having a plurality of types of oxyalkylene groups, the bond may be either a block bond or a random bond.
In the present invention, the (meth) acrylate compound refers to both an acrylate compound and a methacrylate compound. For example, (meth) acrylic acid refers to acrylic acid and methacrylic acid.
上記高分子化合物としては、ウレタンアクリル系、エポキシアクリル系、各種(メタ)アクリレート系等の(メタ)アクリロイル基を1個以上含有する高分子化合物、特に前記(メタ)アクリロイル基を3個以上含有する多官能高分子化合物等が挙げられる。
これら重合性高分子化合物の中でも、(メタ)アクリロイル基を3個以上有し且つオキシアルキレン基を側鎖に有する化合物が好ましい。Examples of the polymer compound include polymer compounds containing one or more (meth) acryloyl groups such as urethane acrylics, epoxy acrylics, and various (meth) acrylates, and particularly three or more (meth) acryloyl groups. Examples thereof include polyfunctional polymer compounds.
Among these polymerizable polymer compounds, a compound having three or more (meth) acryloyl groups and an oxyalkylene group in the side chain is preferable.
(c)成分の高分子化合物の重量平均分子量は、好ましくは10,000〜100,000であり、より好ましくは20,000〜50,000である。分子量が10,000未満であると、本発明の効果を奏さない。一方、分子量が100,000を超えて過大であると、組成物に溶解しない場合がある。 The weight average molecular weight of the polymer compound of the component (c) is preferably 10,000 to 100,000, more preferably 20,000 to 50,000. If the molecular weight is less than 10,000, the effect of the present invention will not be exhibited. On the other hand, if the molecular weight exceeds 100,000 and is excessive, it may not dissolve in the composition.
(c)成分の高分子化合物としては、2つ以上の側鎖に重合性不飽和二重結合を有するポリエチレンオキサイド変性ポリマーが好ましい。その際の変性率としては、15%〜50%が好ましく、20%〜40%がさらに好ましい。変性率が15%未満であると、現像液への溶解性が低下するために、現像性が低下する場合がある。変性率が50%を超えて過大であると、現像時、パターンが流れる場合がある。
そのような(c)成分である化合物としては、例えば、大成ファインケミカル株式会社製の8KX−078H等のEO変性アクリルポリマーが挙げられる。As the polymer compound of the component (c), a polyethylene oxide-modified polymer having a polymerizable unsaturated double bond in two or more side chains is preferable. The modification rate at that time is preferably 15% to 50%, more preferably 20% to 40%. If the modification rate is less than 15%, the solubility in the developing solution is lowered, so that the developability may be lowered. If the denaturation rate exceeds 50% and is excessive, a pattern may flow during development.
Examples of the compound as the component (c) include an EO-modified acrylic polymer such as 8KX-078H manufactured by Taisei Fine Chemicals Co., Ltd.
本発明の感光性下地剤における(c)重合性化合物の添加量は、後述する前記ハイパーブランチポリマーと金属微粒子より形成された複合体(又は前記ハイパーブランチポリマーと金属微粒子の合計質量)100質量部に対して、10〜10,000質量部が好ましい。より好ましくは100〜2,000質量部である。(c)重合性化合物の添加量が上記10質量部未満であると、後述するフォトリソグラフィーによるめっき下地層のパターン形成が困難になり、また10,000質量部を超えて添加した場合、該下地剤により形成した下地層の上に金属めっき被膜が形成しない虞がある。 The amount of the (c) polymerizable compound added to the photosensitive base material of the present invention is 100 parts by mass of a composite (or the total mass of the hyperbranched polymer and the metal fine particles) formed of the hyperbranched polymer and the metal fine particles described later. On the other hand, 10 to 10,000 parts by mass is preferable. More preferably, it is 100 to 2,000 parts by mass. (C) If the amount of the polymerizable compound added is less than 10 parts by mass, it becomes difficult to form a pattern of the plating base layer by photolithography described later, and if it is added in excess of 10,000 parts by mass, the base is said. There is a risk that the metal plating film will not be formed on the base layer formed by the agent.
<(d)光重合開始剤>
本発明の感光性下地剤に用いられる(d)光重合開始剤としては、公知のものが使用することが可能であり、例えば、アルキルフェノン類、ベンゾフェノン類、アシルホスフィンオキシド類、ミヒラーのベンゾイルベンゾエート類、オキシムエステル類、テトラメチルチウラムモノスルフィド類、チオキサントン類等が挙げられる。
特に、光開裂型の光ラジカル重合開始剤が好ましい。光開裂型の光ラジカル重合開始剤については、最新UV硬化技術(159頁、発行人:高薄一弘、発行所:(株)技術情報協会、1991年発行)に記載されているものが挙げられる。
市販されている光ラジカル重合開始剤としては、例えば、IRGACURE(登録商標)184、同369、同500、同651、同784、同819、同907、同1000、同1300、同1700、同1800、同1850、同2959、同CGI1700、同CGI1750、同CGI1850、同CG24−61、同TPO、Darocur(登録商標)1116、同1173、同OXE 01[以上、BASFジャパン(株)製]、ESACURE KIP150、同KIP65LT、同KIP100F、同KT37、同KT55、同KTO46、同KIP75[以上、ランベルティ社製]等が挙げられるが、これらに限定されるものではない。これら重合開始剤は複数種を組み合わせて用いることもできる。<(D) Photopolymerization initiator>
As the (d) photopolymerization initiator used in the photosensitive base material of the present invention, known ones can be used, and for example, alkylphenones, benzophenones, acylphosphine oxides, and Michler's benzoylbenzoates can be used. , Oxime esters, tetramethylthium monosulfides, thioxanthones and the like.
In particular, a photocleavable photoradical polymerization initiator is preferable. Examples of the photocleavable photoradical polymerization initiator are those described in the latest UV curing technology (page 159, publisher: Kazuhiro Takausu, publisher: Technical Information Association, 1991). ..
Examples of commercially available photoradical polymerization initiators include IRGACURE (registered trademark) 184, 369, 500, 651, 784, 819, 907, 1000, 1300, 1700, and 1800. , 1850, 2959, CGI1700, CGI1750, CGI1850, CG24-61, TPO, Darocur® 1116, 1173, OXE 01 [above, manufactured by BASF Japan Ltd.], ESACURE KIP150 , KIP65LT, KIP100F, KT37, KT55, KTO46, KIP75 [all manufactured by Lamberti] and the like, but are not limited thereto. A plurality of types of these polymerization initiators can be used in combination.
本発明の感光性下地剤における(d)重合開始剤の添加量は、前記(c)重合性化合物に対して、例えば0.1〜100質量%であり、好ましくは1〜50質量%、より好ましくは10〜30質量%である。 The amount of the (d) polymerization initiator added to the photosensitive base material of the present invention is, for example, 0.1 to 100% by mass, preferably 1 to 50% by mass, based on the (c) polymerizable compound. It is preferably 10 to 30% by mass.
<(e)アミノ基を有する化合物>
本発明の感光性下地剤に用いられる(e)アミノ基を有する化合物としては、公知のものが使用することが可能であり、例えば、アルキルアミン類、ヒドロキシアルキルアミン類等の脂肪族アミン類、環状置換基を有するアミン類、芳香族アミン(アリールアミン)類、そしてアミノ基を有するアルコキシシラン化合物等が挙げられる。これらアミノ基を有する化合物の中でもアミノ基を有するアルコキシシラン化合物が好ましい。
また、めっき下地剤の保存安定性を向上させる観点から、アミン化合物のアミノ基はケトン類により保護(アルキリデン基による保護)されていることが好ましく、本発明において、当該アミノ基がアルキリデン基により保護されたアミン化合物もアミン化合物も(e)成分に含まれる。なお、(e)成分としてこのアルキリデン基により保護されたアミン化合物を用いる場合、後述する下地剤の溶媒としては、前記アルキリデン基による保護を外すこととなるアルコール溶媒ではなく、ケトン類、エーテル類、エステル類の溶媒を用いることが好ましい。
本発明では、アミノ基を含有する化合物を感光性下地剤に配合することにより、金属微粒子、詳細には後述する金属微粒子とアンモニウム基を有するハイパーブランチポリマーよりなる複合体の下地剤中の分散安定性向上の効果が得られ、また微細なめっきパターン形成に寄与する。<(E) Compound having an amino group>
As the compound having an amino group (e) used in the photosensitive base material of the present invention, known compounds can be used, for example, aliphatic amines such as alkylamines and hydroxyalkylamines. Examples thereof include amines having a cyclic substituent, aromatic amines (arylamines), and alkoxysilane compounds having an amino group. Among these compounds having an amino group, an alkoxysilane compound having an amino group is preferable.
Further, from the viewpoint of improving the storage stability of the plating base material, it is preferable that the amino group of the amine compound is protected by ketones (protection by the alkylidene group), and in the present invention, the amino group is protected by the alkylidene group. Both the amine compound and the amine compound are included in the component (e). When the amine compound protected by the alkylidene group is used as the component (e), the solvent of the base material described later is not an alcohol solvent that removes the protection by the alkylidene group, but ketones, ethers, etc. It is preferable to use an ester solvent.
In the present invention, by blending a compound containing an amino group with a photosensitive base material, dispersion stability in the base material of a composite composed of metal fine particles, specifically, a hyperbranched polymer having metal fine particles and an ammonium group, which will be described later, is stable. The effect of improving the properties can be obtained, and it also contributes to the formation of fine plating patterns.
上記アルキルアミン類としては、エチルアミン(CH3CH2NH2)、プロピルアミン(CH3(CH2)2NH2)、ブチルアミン(CH3(CH2)3NH2)、ペンチルアミン(CH3(CH2)4NH2)、ヘキシルアミン(CH3(CH2)5NH2)、ヘプチルアミン(CH3(CH2)6NH2)、オクチルアミン(CH3(CH2)7NH2)、ノニルアミン(CH3(CH2)8NH2)、デシルアミン(CH3(CH2)9NH2)、ウンデシルアミン(CH3(CH2)10NH2)、ドデシルアミン(CH3(CH2)11NH2)、トリデシルアミン(CH3(CH2)12NH2)、テトラデシルアミン(CH3(CH2)13NH2)、ペンタデシルアミン(CH3(CH2)14NH2)、ヘキサデシルアミン(CH3(CH2)15NH2)、ヘプタデシルアミン(CH3(CH2)16NH2)、オクタデシルアミン(CH3(CH2)17NH2)、ノナデシルアミン(CH3(CH2)18NH2)、イコシルアミン(CH3(CH2)19NH2)、及びこれらの構造異性体等の第一級アミン類;N,N−ジメチルアミン、N,N−ジエチルアミン、N,N−ジプロピルアミン、N,N−ジブチルアミン等の第二級アミン類;トリメチルアミン、トリエチルアミン、トリプロピルアミン、トリブチルアミン等の第三級アミン類が挙げられる。Examples of the alkylamines include ethylamine (CH 3 CH 2 NH 2 ), propylamine (CH 3 (CH 2 ) 2 NH 2 ), butylamine (CH 3 (CH 2 ) 3 NH 2 ), and pentylamine (CH 3 (CH 3). CH 2 ) 4 NH 2 ), hexylamine (CH 3 (CH 2 ) 5 NH 2 ), heptylamine (CH 3 (CH 2 ) 6 NH 2 ), octylamine (CH 3 (CH 2 ) 7 NH 2 ), Nonylamine (CH 3 (CH 2 ) 8 NH 2 ), decylamine (CH 3 (CH 2 ) 9 NH 2 ), undecylamine (CH 3 (CH 2 ) 10 NH 2 ), dodecylamine (CH 3 (CH 2 )) 11 NH 2 ), tridecylamine (CH 3 (CH 2 ) 12 NH 2 ), tetradecylamine (CH 3 (CH 2 ) 13 NH 2 ), pentadecylamine (CH 3 (CH 2 ) 14 NH 2 ), Hexadecylamine (CH 3 (CH 2 ) 15 NH 2 ), heptadecylamine (CH 3 (CH 2 ) 16 NH 2 ), octadecylamine (CH 3 (CH 2 ) 17 NH 2 ), nonadesylamine (CH 3 (CH 2)) 2 ) 18 NH 2 ), icosylamines (CH 3 (CH 2 ) 19 NH 2 ), and primary amines such as structural isomers of these; N, N-dimethylamine, N, N-diethylamine, N, N Secondary amines such as −dipropylamine, N, N-dibutylamine; tertiary amines such as trimethylamine, triethylamine, tripropylamine, tributylamine and the like can be mentioned.
上記ヒドロキシアルキルアミン類(アルカノールアミン類)としては、メタノールアミン(OHCH2NH2)、エタノールアミン(OH(CH2)2NH2)、プロパノールアミン(OH(CH2)3NH2)、ブタノールアミン(OH(CH2)4NH2)、ペンタノールアミン(OH(CH2)5NH2)、ヘキサノールアミン(OH(CH2)6NH2)、ヘプタノールアミン(OH(CH2)7NH2)、オクタノールアミン(OH(CH2)8NH2)、ノナノールアミン(OH(CH2)9NH2)、デカノールアミン(OH(CH2)10NH2)、ウンデカノールアミン(OH(CH2)11NH2)、ドデカノールアミン(OH(CH2)12NH2)、トリデカノールアミン(OH(CH2)13NH2)、テトラデカノールアミン(OH(CH2)14NH2)、ペンタデカノールアミン(OH(CH2)15NH2)、ヘキサデカノールアミン(OH(CH2)16NH2)、ヘプタデカノールアミン(OH(CH2)17NH2)、オクタデカノールアミン(OH(CH2)18NH2)、ノナデカノールアミン(OH(CH2)19NH2)、エイコサデカノールアミン(OH(CH2)20NH2)等の第一級アミン類;N−メチルメタノールアミン、N−エチルメタノールアミン、N−プロピルメタノールアミン、N−ブチルメタノールアミン、N−メチルエタノールアミン、N−エチルエタノールアミン、N−プロピルエタノールアミン、N−ブチルエタノールアミン、N−メチルプロパノールアミン、N−エチルプロパノールアミン、N−プロピルプロパノールアミン、N−ブチルプロパノールアミン、N−メチルブタノールアミン、N−エチルブタノールアミン、N−プロピルブタノールアミン、N−ブチルブタノールアミン等の第二級アミン類などが挙げられる。Examples of the hydroxyalkylamines (alkanolamines) include methanolamine (OHCH 2 NH 2 ), ethanolamine (OH (CH 2 ) 2 NH 2 ), propanol amine (OH (CH 2 ) 3 NH 2 ), and butanol amine. (OH (CH 2 ) 4 NH 2 ), Pentanolamine (OH (CH 2 ) 5 NH 2 ), Hexanolamine (OH (CH 2 ) 6 NH 2 ), Heptanolamine (OH (CH 2 ) 7 NH 2) ), Octanolamine (OH (CH 2 ) 8 NH 2 ), Nonanolamine (OH (CH 2 ) 9 NH 2 ), Decanolamine (OH (CH 2 ) 10 NH 2 ), Undecanolamine (OH (OH (CH 2)) CH 2 ) 11 NH 2 ), dodecanolamine (OH (CH 2 ) 12 NH 2 ), tridecanolamine (OH (CH 2 ) 13 NH 2 ), tetradecanolamine (OH (CH 2 ) 14 NH 2) ), Pentadecanolamine (OH (CH 2 ) 15 NH 2 ), Hexadecanolamine (OH (CH 2 ) 16 NH 2 ), Heptadecanolamine (OH (CH 2 ) 17 NH 2 ), Octadecanol Primary amines such as amines (OH (CH 2 ) 18 NH 2 ), nonadecanol amines (OH (CH 2 ) 19 NH 2 ), ecosadecanol amines (OH (CH 2 ) 20 NH 2); N-methylmethanolamine, N-ethylmethanolamine, N-propylmethanolamine, N-butylmethanolamine, N-methylethanolamine, N-ethylethanolamine, N-propylethanolamine, N-butylethanolamine, N- Secondary such as methylpropanolamine, N-ethylpropanolamine, N-propylpropanolamine, N-butylpropanolamine, N-methylbutanolamine, N-ethylbutanolamine, N-propylbutanolamine, N-butylbutanolamine and the like. Examples include amines.
またその他の脂肪族アミン類としては、メトキシメチルアミン、メトキシエチルアミン、メトキシプロピルアミン、メトキシブチルアミン、エトキシメチルアミン、エトキシエチルアミン、エトキシプロピルアミン、エトキシブチルアミン、プロポキシメチルアミン、プロポキシエチルアミン、プロポキシプロピルアミン、プロポキシブチルアミン、ブトキシメチルアミン、ブトキシエチルアミン、ブトキシプロピルアミン、ブトキシブチルアミン等のアルコキシアルキルアミンが挙げられる。 Other aliphatic amines include methoxymethylamine, methoxyethylamine, methoxypropylamine, methoxybutylamine, ethoxymethylamine, ethoxyethylamine, ethoxypropylamine, ethoxybutylamine, propoxymethylamine, propoxyethylamine, propoxypropylamine, and propoxy. Examples thereof include alkoxyalkylamines such as butylamine, butoxymethylamine, butoxyethylamine, butoxypropylamine and butoxybutylamine.
環状置換基を有するアミン類の例としては、式R11−R12−NH2で表されるアミン化合物が好ましい。
上記式中、R11は炭素原子数3乃至10、好ましくは炭素原子数3乃至12の一価の環状基であり、脂環式基、芳香族基、並びにそれらの組み合わせのいずれであってもよい。これらの環状基は任意の置換基、例えば炭素原子1乃至10のアルキル基等で置換されていてもよい。R12は単結合又は炭素原子数1乃至17、好ましくは炭素原子数1乃至3のアルキレン基を表す。As an example of amines having a cyclic substituent, an amine compound represented by the formula R 11- R 12- NH 2 is preferable.
In the above formula, R 11 is a monovalent cyclic group having 3 to 10 carbon atoms, preferably 3 to 12 carbon atoms, and may be an alicyclic group, an aromatic group, or a combination thereof. Good. These cyclic groups may be substituted with any substituent, for example, an alkyl group having 1 to 10 carbon atoms. R 12 represents a single bond or an alkylene group having 1 to 17 carbon atoms, preferably 1 to 3 carbon atoms.
本発明において、式R11−R12−NH2で表されるアミン化合物の好ましい具体例としては、下記の式(A−1)乃至(A−10)で表される化合物などが挙げられる。
In the present invention, preferred specific examples of the amine compound represented by the formula R 11- R 12- NH 2 include compounds represented by the following formulas (A-1) to (A-10).
芳香族アミン類(アリールアミン類)の具体例として、アニリン、N−メチルアニリン、o−,m−,又はp−アニシジン、o−,m−,又はp−トルイジン、o−,m−,又はp−クロロアニリン、o−,m−,又はp−ブロモアニリン、o−,m−,又はp−ヨードアニリンなどが挙げられる。 Specific examples of aromatic amines (arylamines) include aniline, N-methylaniline, o-, m-, or p-anisidine, o-, m-, or p-toluidine, o-, m-, or. Examples thereof include p-chloroaniline, o-, m-, or p-bromoaniline, o-, m-, or p-iodoaniline.
アミノ基を有するアルコキシシラン化合物の具体例としてはN,N’−ビス[3−(トリメトキシシリル)プロピル]−1,2−エタンジアミン、N,N’−ビス[3−(トリエトキシシリル)プロピル]−1,2−エタンジアミン、N−[3−(トリメトキシシリル)プロピル]−1,2−エタンジアミン、N−[3−(トリエトキシシリル)プロピル]−1,2−エタンジアミン、ビス−[3−(トリメトキシシリル)プロピル]アミン、ビス−[3−(トリエトキシシリル)プロピル]アミン、3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリエトキシシラン、3−アミノプロピルメチルジメトキシシラン、3−アミノプロピルメチルジエトキシシラン、トリメトキシ[3−(メチルアミノ)]プロピルシラン、3−(N−アリルアミノ)プロピルトリメトキシシラン、3−(N−アリルアミノ)プロピルトリエトキシシラン、3−(ジエチルアミノ)プロピルトリメトキシシラン、3−(ジエチルアミノ)プロピルトリエトキシシラン、3−(フェニルアミノ)プロピルトリメトキシシラン、3−(フェニルアミノ)プロピルトリエトキシシラン等の化合物が挙げられる。 Specific examples of the alkoxysilane compound having an amino group include N, N'-bis [3- (trimethoxysilyl) propyl] -1,2-ethanediamine and N, N'-bis [3- (triethoxysilyl). Propyl] -1,2-ethanediamine, N- [3- (trimethoxysilyl) propyl] -1,2-ethanediamine, N- [3- (triethoxysilyl) propyl] -1,2-ethanediamine, Bis- [3- (trimethoxysilyl) propyl] amine, bis- [3- (triethoxysilyl) propyl] amine, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropylmethyldimethoxy Silane, 3-aminopropylmethyldiethoxysilane, trimethoxy [3- (methylamino)] propylsilane, 3- (N-allylamino) propyltrimethoxysilane, 3- (N-allylamino) propyltriethoxysilane, 3-( Examples thereof include compounds such as diethylamino) propyltrimethoxysilane, 3- (diethylamino) propyltriethoxysilane, 3- (phenylamino) propyltrimethoxysilane, and 3- (phenylamino) propyltriethoxysilane.
また上記に具体例を挙げたアルキルアミン類、ヒドロキシアルキルアミン類、その他の脂肪族アミン類、環状置換基を有するアミン類、芳香族アミン(アリールアミン)類、アルコキシシリル基を有するアミン化合物において、アミノ基が、例えばメチルエチルケトンやメチルイソブチルケトン等のケトン類により、アルキリデン基保護されたアミノ化合物が挙げられる。
本発明の感光性下地剤における(e)アミノ基を有する化合物の含有量は、後述する前記ハイパーブランチポリマーと金属微粒子より形成された複合体(又は前記ハイパーブランチポリマーと金属微粒子の合計質量)100質量部に対して1質量部〜100質量部であることが好ましく、より好ましくは5質量部〜50質量部であり、特に10質量部〜15質量部である。
(e)アミノ基を有する化合物の含有量が上記数値範囲より過少である場合、後述する前記ハイパーブランチポリマーと金属微粒子より形成された複合体やさらには後述する(f)多官能チオールの分散性・溶解性安定化効果が得られず、また上記範囲を大きく超えて添加した場合(例えば上記複合体の10質量倍量など)、めっき被膜に外観不良を起こすことがある。Further, in the alkylamines, hydroxyalkylamines, other aliphatic amines, amines having a cyclic substituent, aromatic amines (arylamines), and amine compounds having an alkoxysilyl group, which are specifically mentioned above, Examples thereof include amino compounds in which the amino group is protected by an alkylidene group by ketones such as methyl ethyl ketone and methyl isobutyl ketone.
The content of the compound having an amino group (e) in the photosensitive base material of the present invention is 100, which is a composite formed from the hyperbranched polymer and the metal fine particles described later (or the total mass of the hyperbranched polymer and the metal fine particles) 100. It is preferably 1 part by mass to 100 parts by mass, more preferably 5 parts by mass to 50 parts by mass, and particularly 10 parts by mass to 15 parts by mass.
(E) When the content of the compound having an amino group is less than the above numerical range, the dispersibility of the complex formed from the hyperbranched polymer and the metal fine particles described later and further (f) the polyfunctional thiol described later. -If the solubility stabilizing effect cannot be obtained and the amount is added far beyond the above range (for example, 10 mass times the amount of the above composite), the plating film may have a poor appearance.
<(f)多官能チオール>
本発明の感光性下地剤に用いられる(f)成分である多官能チオールとしては、2個以上のメルカプト基を有する化合物である限り特に限定されるものではないが、例えば、置換基として2個以上のメルカプト基を有する炭化水素類、またその他の多官能の化合物として、多価アルコールのメルカプトカルボン酸エステル、例えば多価アルコールのポリ(メルカプトアセテート)類、多価アルコールのポリ(3−メルカプトプロピオネート)類、多価アルコールのポリ(2−メルカプトプロピオネート)類、多価アルコールのポリ(3−メルカプトブチレート)類、多価アルコールのポリ(3−メルカプトイソブチレート)類、等を挙げることができる。
本発明の感光性下地剤において、多官能チオールは、架橋剤としてだけでなく連鎖移動剤としての役割をも担い、フォトリソグラフィー時に高感度で優れた現像性の実現に寄与するといえる。<(F) Polyfunctional thiol>
The polyfunctional thiol which is the component (f) used in the photosensitive base material of the present invention is not particularly limited as long as it is a compound having two or more mercapto groups, but for example, two as substituents. As the above hydrocarbons having a mercapto group and other polyfunctional compounds, mercaptocarboxylic acid esters of polyhydric alcohols, for example, polyhydric alcohols (mercaptoacetate), polyhydric alcohols (3-mercaptopro) Pionates), polyhydric alcohol polys (2-mercaptopropionates), polyhydric alcohol polys (3-mercaptobutyrate), polyhydric alcohol polys (3-mercaptoisobutyrate), etc. Can be mentioned.
In the photosensitive base material of the present invention, the polyfunctional thiol plays a role not only as a cross-linking agent but also as a chain transfer agent, and can be said to contribute to the realization of high sensitivity and excellent developability during photolithography.
上記置換基として2個以上のメルカプト基を有する炭化水素類の具体例としては、ヘキサン−1,6−ジチオール、デカン−1,10−ジチオール、1,4−ベンゼンジチオール、1,4−ビス(メルカプトメチル)ベンゼン等を挙げることができる。 Specific examples of hydrocarbons having two or more mercapto groups as the substituents include hexane-1,6-dithiol, decane-1,10-dithiol, 1,4-benzenedithiol, and 1,4-bis (). Mercaptomethyl) benzene and the like can be mentioned.
また他の2官能の化合物としては、エチレングリコールビス(メルカプトアセテート)、プロピレングリコールビス(メルカプトアセテート)、エチレングリコールビス(3−メルカプトプロピオネート)、プロピレングリコールビス(3−メルカプトプロピオネート)、エチレングリコールビス(2−メルカプトプロピオネート)、プロピレングリコールビス(2−メルカプトプロピオネート)、ジエチレングリコールビス(2−メルカプトプロピオネート)、ブタンジオールビス(2−メルカプトプロピオネート)、オクタンジオールビス(2−メルカプトプロピオネート)、エチレングリコールビス(3−メルカプトブチレート)、ジエチレングリコールビス(3−メルカプトブチレート)、ブタンジオールビス(3−メルカプトブチレート)、トリメチロールプロパントリス(3−メルカプトブチレート)、ペンタエリスリトールテトラキス(3−メルカプトブチレート)、ジペンタエリスリトールヘキサキス(3−メルカプトブチレート)、エチレングリコールビス(3−メルカプトイソブチレート)、ジエチレングリコールビス(3−メルカプトイソブチレート)、ブタンジオールビス(3−メルカプトイソブチレート)、オクタンジオールビス(3−メルカプトイソブチレート)等を挙げることができる。 Examples of other bifunctional compounds include ethylene glycol bis (mercaptoacetate), propylene glycol bis (mercaptoacetate), ethylene glycol bis (3-mercaptopropionate), propylene glycol bis (3-mercaptopropionate), and the like. Ethylene glycol bis (2-mercaptopropionate), propylene glycol bis (2-mercaptopropionate), diethylene glycol bis (2-mercaptopropionate), butanediol bis (2-mercaptopropionate), octanediol bis (2-Mercaptopropionate), Ethylene Glycolbis (3-Mercaptobutyrate), Diethylene Glycolbis (3-Mercaptobutyrate), Butanediolbis (3-Mercaptobutyrate), Trimethylol Propantris (3-Mercaptobutyrate) Rate), pentaerythritol tetrakis (3-mercaptobutyrate), dipentaerythritol hexakis (3-mercaptobutyrate), ethylene glycol bis (3-mercaptoisobutyrate), diethylene glycol bis (3-mercaptoisobutyrate), Butanediol bis (3-mercaptoisobutyrate), octanediolbis (3-mercaptoisobutyrate) and the like can be mentioned.
3官能の化合物としては、グリセリントリス(メルカプトアセテート)、トリメチロールプロパントリス(メルカプトアセテート)、グリセリントリス(3−メルカプトプロピオネート)、トリメチロールプロパントリス(3−メルカプトプロピオネート)、トリメチロールプロパントリス(2−メルカプトプロピオネート)、トリメチロールプロパントリス(3−メルカプトイソブチレート)、等を挙げることができる。 Trifunctional compounds include glycerintris (mercaptoacetate), trimethylolpropanetris (mercaptoacetate), glycerintris (3-mercaptopropionate), trimethylolpropanetris (3-mercaptopropionate), and trimethylolpropane. Tris (2-mercaptopropionate), trimethylolpropane tris (3-mercaptoisobutyrate), and the like can be mentioned.
4官能の化合物としては、ペンタエリスリトールテトラキス(メルカプトアセテート)、ペンタエリスリトールテトラキス(3−メルカプトプロピオネート)、ペンタエリスリトールテトラキス(2−メルカプトプロピオネート)、ペンタエリスリトールテトラキス(3−メルカプトイソブチレート)、等を挙げることができる。 Examples of the tetrafunctional compound include pentaerythritol tetrakis (mercaptoacetate), pentaerythritol tetrakis (3-mercaptopropionate), pentaerythritol tetrakis (2-mercaptopropionate), and pentaerythritol tetrakis (3-mercaptoisobutyrate). , Etc. can be mentioned.
6官能の化合物としては、ジペンタエリスリトールヘキサキス(メルカプトアセテート)、ジペンタエリスリトールヘキサキス(3−メルカプトプロピオネート)、ジペンタエリスリトールヘキサキス(2−メルカプトプロピオネート)、ジペンタエリスリトールヘキサキス(3−メルカプトイソブチレート)、オクタンジオールビス(3−メルカプトブチレート)等を挙げることができる。 As the hexafunctional compound, dipentaerythritol hexakis (mercaptoacetate), dipentaerythritol hexakis (3-mercaptopropionate), dipentaerythritol hexakis (2-mercaptopropionate), dipentaerythritol hexakis (3-Mercaptoisobutyrate), octanediolbis (3-mercaptobutyrate) and the like can be mentioned.
これらの多官能チオールの中でも、感光性下地剤の現像性の向上の観点から、4官能のチオール化合物を用いることが好ましい。
本発明において、(f)多官能チオールは、単独で又は2種以上を混合して使用することができる。Among these polyfunctional thiols, it is preferable to use a tetrafunctional thiol compound from the viewpoint of improving the developability of the photosensitive base material.
In the present invention, (f) polyfunctional thiol can be used alone or in combination of two or more.
本発明の感光性下地剤における(f)多官能チオールの配合量は、後述する前記ハイパーブランチポリマーと金属微粒子より形成された複合体(又は前記ハイパーブランチポリマーと金属微粒子の合計質量)の総質量に対して0.01質量%〜200質量%であることが好ましく、0.05質量%〜50質量%であることが望ましい。配合比率が上記範囲以下であると所望の効果が得られず、一方、上記範囲を超えて添加すると、感光性下地剤の安定性、臭気、感度、解像性、現像性、密着性、めっきの析出性等が悪化する虞がある。 The blending amount of (f) polyfunctional thiol in the photosensitive base material of the present invention is the total mass of the complex (or the total mass of the hyperbranched polymer and the metal fine particles) formed from the hyperbranched polymer and the metal fine particles described later. It is preferably 0.01% by mass to 200% by mass, and preferably 0.05% by mass to 50% by mass. If the blending ratio is less than the above range, the desired effect cannot be obtained, while if it is added beyond the above range, the stability, odor, sensitivity, resolution, developability, adhesion, and plating of the photosensitive base material are obtained. There is a risk that the precipitation property and the like will deteriorate.
<感光性下地剤>
本発明の感光性下地剤は、前記(a)アンモニウム基を分子末端に有するハイパーブランチポリマー、(b)金属微粒子、(c)重合性化合物、(d)光重合開始剤、(e)アミノ基を有する化合物、及び(f)多官能チオールを含み、所望により、さらにはその他成分を含むものであり、このとき、前記ハイパーブランチポリマーと前記金属微粒子が複合体を形成していることが好ましい。
ここで複合体とは、前記ハイパーブランチポリマーの末端のアンモニウム基の作用により、金属微粒子に接触又は近接した状態で両者が共存し、粒子状の形態を為すものであり、言い換えると、前記ハイパーブランチポリマーのアンモニウム基が金属微粒子に付着又は配位した構造を有する複合体であると表現される。
従って、本発明における「複合体」には、上述のように金属微粒子とハイパーブランチポリマーが結合して一つの複合体を形成しているものだけでなく、金属微粒子とハイパーブランチポリマーが結合部分を形成することなく、夫々独立して存在しているものも含まれていてもよい。<Photosensitive base material>
The photosensitive base material of the present invention comprises the above-mentioned (a) hyperbranched polymer having an ammonium group at the molecular terminal, (b) metal fine particles, (c) polymerizable compound, (d) photopolymerization initiator, and (e) amino group. It contains the compound having (f) polyfunctional thiol and, if desired, other components, and at this time, it is preferable that the hyperbranched polymer and the metal fine particles form a complex.
Here, the complex is a composite in which both coexist in contact with or in close contact with metal fine particles due to the action of the ammonium group at the end of the hyperbranched polymer to form a particulate form, in other words, the hyperbranched polymer. It is expressed as a composite having a structure in which the ammonium group of the polymer is attached or coordinated to the metal fine particles.
Therefore, the "complex" in the present invention includes not only the one in which the metal fine particles and the hyperbranched polymer are bonded to form one complex as described above, but also the metal fine particles and the hyperbranched polymer in the bonded portion. Those that exist independently without forming may also be included.
アンモニウム基を有するハイパーブランチポリマーと金属微粒子の複合体の形成は、ハイパーブランチポリマーと金属微粒子を含む下地剤の調製時に同時に実施され、その方法としては、低級アンモニウム配位子によりある程度安定化した金属微粒子を製造した後にハイパーブランチポリマーにより配位子を交換する方法や、アンモニウム基を有するハイパーブランチポリマーの溶液中で、金属イオンを直接還元することにより複合体を形成する方法がある。例えば、上記ハイパーブランチポリマーを溶解した溶液に金属塩の水溶液を添加してこれに紫外線を照射する、又は、該ハイパーブランチポリマー溶液に金属塩の水溶液及び還元剤を添加するなどして、金属イオンを還元することによっても複合体を形成できる。 The formation of a complex of a hyperbranched polymer having an ammonium group and metal fine particles was carried out at the same time as the preparation of the base material containing the hyperbranched polymer and the metal fine particles, and the method was as follows: a metal stabilized to some extent by a lower ammonium ligand. There are a method of exchanging a ligand with a hyperbranched polymer after producing fine particles, and a method of forming a complex by directly reducing metal ions in a solution of a hyperbranched polymer having an ammonium group. For example, a metal ion is added by adding an aqueous solution of a metal salt to the solution in which the hyperbranched polymer is dissolved and irradiating it with ultraviolet rays, or by adding an aqueous solution of the metal salt and a reducing agent to the hyperbranched polymer solution. Complexes can also be formed by reducing.
配位子交換法において、原料となる低級アンモニウム配位子によりある程度安定化した金属微粒子は、Jounal of Organometallic Chemistry 1996,520,143−162等に記載の方法で製造することができる。得られた金属微粒子の反応混合溶液に、アンモニウム基を有するハイパーブランチポリマーを溶解し、室温(およそ25℃)又は加熱撹拌することにより目的とする金属微粒子複合体を得ることができる。
使用する溶媒としては、金属微粒子とアンモニウム基を有するハイパーブランチポリマーとを必要濃度以上に溶解できる溶媒であれば特に限定はされないが、具体的には、エタノール、n−プロパノール、イソプロパノール等のアルコール類;塩化メチレン、クロロホルム等のハロゲン化炭化水素類;テトラヒドロフラン(THF)、2−メチルテトラヒドロフラン、テトラヒドロピラン等の環状エーテル類;アセトニトリル、ブチロニトリル等のニトリル類など及びこれらの溶媒の混合液が挙げられ、好ましくは、テトラヒドロフランが挙げられる。
金属微粒子の反応混合液と、アンモニウム基を有するハイパーブランチポリマーを混合する温度は、通常0℃乃至溶媒の沸点の範囲を使用することができ、好ましくは、室温(およそ25℃)乃至60℃の範囲である。
なお、配位子交換法において、アミン系分散剤(低級アンモニウム配位子)以外にホスフィン系分散剤(ホスフィン配位子)を用いることによっても、あらかじめ金属微粒子をある程度安定化することができる。In the ligand exchange method, metal fine particles stabilized to some extent by a lower ammonium ligand as a raw material can be produced by the method described in Journal of Organometallic Chemistry 1996, 520, 143-162 and the like. The desired metal fine particle composite can be obtained by dissolving a hyperbranched polymer having an ammonium group in the reaction mixed solution of the obtained metal fine particles and stirring at room temperature (about 25 ° C.) or heating.
The solvent used is not particularly limited as long as it is a solvent capable of dissolving the metal fine particles and the hyperbranched polymer having an ammonium group in a required concentration or more, but specifically, alcohols such as ethanol, n-propanol and isopropanol are used. Halogenized hydrocarbons such as methylene chloride and chloroform; cyclic ethers such as tetrahydrofuran (THF), 2-methyltetrahydrofuran and tetrahydropyran; nitriles such as acetonitrile and butyronitrile and mixed solutions of these solvents can be mentioned. Preferred is tetrahydrofuran.
The temperature at which the reaction mixture of the metal fine particles and the hyperbranched polymer having an ammonium group are mixed can usually be in the range of 0 ° C. to the boiling point of the solvent, preferably at room temperature (approximately 25 ° C.) to 60 ° C. The range.
In the ligand exchange method, the metal fine particles can be stabilized to some extent in advance by using a phosphine-based dispersant (phosphine ligand) in addition to the amine-based dispersant (lower ammonium ligand).
直接還元方法としては、金属イオンとアンモニウム基を有するハイパーブランチポリマーを溶媒に溶解し、メタノール、エタノール、イソプロパノール、ポリオール等の第一級又は第二級アルコール類で還元させることにより、目的とする金属微粒子複合体を得ることができる。
ここで用いられる金属イオン源としては、上述の金属塩が使用できる。
使用する溶媒としては、金属イオンとアンモニウム基を有するハイパーブランチポリマーを必要濃度以上に溶解できる溶媒であれば特に限定はされないが、具体的には、メタノール、エタノール、プロパノール、イソプロパノール等のアルコール類;塩化メチレン、クロロホルム等のハロゲン化炭化水素類;テトラヒドロフラン(THF)、2−メチルテトラヒドロフラン、テトラヒドロピラン等の環状エーテル類;アセトニトリル、ブチロニトリル等のニトリル類;N,N−ジメチルホルムアミド(DMF)、N−メチル−2−ピロリドン(NMP)等のアミド類;ジメチルスルホキシド等のスルホキシド類など及びこれらの溶媒の混合液が挙げられ、好ましくは、アルコール類、ハロゲン化炭化水素類、環状エーテル類が上げられ、より好ましくは、エタノール、イソプロパノール、クロロホルム、テトラヒドロフランなどが挙げられる。
還元反応の温度は、通常0℃乃至溶媒の沸点の範囲を使用することができ、好ましくは、室温(およそ25℃)乃至60℃の範囲である。As a direct reduction method, a hyperbranched polymer having a metal ion and an ammonium group is dissolved in a solvent and reduced with primary or secondary alcohols such as methanol, ethanol, isopropanol and polyol to obtain the desired metal. A fine particle composite can be obtained.
As the metal ion source used here, the above-mentioned metal salt can be used.
The solvent used is not particularly limited as long as it is a solvent capable of dissolving a hyperbranched polymer having a metal ion and an ammonium group in a required concentration or more, but specifically, alcohols such as methanol, ethanol, propanol and isopropanol; Halogenated hydrocarbons such as methylene chloride and chloroform; cyclic ethers such as tetrahydrofuran (THF), 2-methyl tetrahydrofuran and tetrahydropyran; nitriles such as acetonitrile and butyronitrile; N, N-dimethylformamide (DMF), N- Examples thereof include amides such as methyl-2-pyrrolidone (NMP); sulfoxides such as dimethylsulfonate and the like, and a mixed solution of these solvents, preferably alcohols, halogenated hydrocarbons, cyclic ethers and the like. More preferably, ethanol, isopropanol, chloroform, tetrahydrofuran and the like can be mentioned.
The temperature of the reduction reaction can usually be in the range of 0 ° C. to the boiling point of the solvent, preferably in the range of room temperature (approximately 25 ° C.) to 60 ° C.
他の直接還元方法としては、金属イオンとアンモニウム基を有するハイパーブランチポリマーを溶媒に溶解し、水素ガス雰囲気下で反応させることにより、目的とする金属微粒子複合体を得ることができる。
ここで用いられる金属イオン源としては、上述の金属塩や、ヘキサカルボニルクロム[Cr(CO)6]、ペンタカルボニル鉄[Fe(CO)5]、オクタカルボニルジコバルト[Co2(CO)8]、テトラカルボニルニッケル[Ni(CO)4]等の金属カルボニル錯体が使用できる。また金属オレフィン錯体や金属ホスフィン錯体、金属窒素錯体等の0価の金属錯体も使用できる。
使用する溶媒としては、金属イオンとアンモニウム基を有するハイパーブランチポリマーを必要濃度以上に溶解できる溶媒であれば特に限定はされないが、具体的には、エタノール、プロパノール等のアルコール類;塩化メチレン、クロロホルム等のハロゲン化炭化水素類;テトラヒドロフラン、2−メチルテトラヒドロフラン、テトラヒドロピラン等の環状エーテル類;アセトニトリル、ブチロニトリル等のニトリル類など及びこれらの溶媒の混合液が挙げられ、好ましくは、テトラヒドロフランが挙げられる。
金属イオンとアンモニウム基を有するハイパーブランチポリマーを混合する温度は、通常0℃乃至溶媒の沸点の範囲を使用することができる。As another direct reduction method, a desired metal fine particle composite can be obtained by dissolving a hyperbranched polymer having a metal ion and an ammonium group in a solvent and reacting the mixture in a hydrogen gas atmosphere.
Examples of the metal ion source used here include the above-mentioned metal salt, hexacarbonyl chromium [Cr (CO) 6 ], pentacarbonyl iron [Fe (CO) 5 ], and octacarbonyl dicobalt [Co 2 (CO) 8 ]. , Tetracarbonyl nickel [Ni (CO) 4 ] and other metal carbonyl complexes can be used. Further, zero-valent metal complexes such as metal olefin complexes, metal phosphine complexes, and metal nitrogen complexes can also be used.
The solvent used is not particularly limited as long as it is a solvent capable of dissolving a hyperbranched polymer having a metal ion and an ammonium group in a required concentration or more, but specifically, alcohols such as ethanol and propanol; methylene chloride and chloroform. Halogenated hydrocarbons such as, etc .; cyclic ethers such as tetrahydrofuran, 2-methyltetrahydrofuran, tetrahydropyran; nitriles such as acetonitrile and butyronitrile and a mixed solution of these solvents are mentioned, and tetrahydrofuran is preferable.
The temperature at which the metal ion and the hyperbranched polymer having an ammonium group are mixed can usually be in the range of 0 ° C. to the boiling point of the solvent.
また、直接還元方法として、金属イオンとアンモニウム基を有するハイパーブランチポリマーを溶媒に溶解し、熱分解反応させることにより、目的とする金属微粒子複合体を得ることができる。
ここで用いられる金属イオン源としては、上述の金属塩や金属カルボニル錯体やその他の0価の金属錯体、酸化銀等の金属酸化物が使用できる。
使用する溶媒としては、金属イオンとアンモニウム基を有するハイパーブランチポリマーを必要濃度以上に溶解できる溶媒であれば特に限定はされないが、具体的には、メタノール、エタノール、n−プロパノール、イソプロパノール、エチレングリコール等のアルコール類;塩化メチレン、クロロホルム等のハロゲン化炭化水素類;テトラヒドロフラン(THF)、2−メチルテトラヒドロフラン、テトラヒドロピラン等の環状エーテル類;アセトニトリル、ブチロニトリル等のニトリル類;ベンゼン、トルエン等の芳香族炭化水素類など及びこれらの溶媒の混合液が挙げられ、好ましくはトルエンが挙げられる。
金属イオンとアンモニウム基を有するハイパーブランチポリマーを混合する温度は、通常0℃乃至溶媒の沸点の範囲を使用することができ、好ましくは溶媒の沸点近傍、例えばトルエンの場合は110℃(加熱還流)である。Further, as a direct reduction method, a desired metal fine particle composite can be obtained by dissolving a hyperbranched polymer having a metal ion and an ammonium group in a solvent and causing a thermal decomposition reaction.
As the metal ion source used here, the above-mentioned metal salt, metal carbonyl complex, other zero-valent metal complex, and metal oxide such as silver oxide can be used.
The solvent used is not particularly limited as long as it can dissolve a hyperbranched polymer having a metal ion and an ammonium group in a concentration higher than the required concentration, but specifically, methanol, ethanol, n-propanol, isopropanol, and ethylene glycol are used. Alcohols such as: Methylene chloride, halogenated hydrocarbons such as chloroform; cyclic ethers such as tetrahydrofuran (THF), 2-methyltetrahydrofuran, tetrahydropyran; nitriles such as acetonitrile and butyronitrile; aromatics such as benzene and toluene Examples thereof include hydrocarbons and the like, and a mixed solution of these solvents, preferably toluene.
The temperature at which the metal ion and the hyperbranched polymer having an ammonium group are mixed can usually be in the range of 0 ° C. to the boiling point of the solvent, preferably near the boiling point of the solvent, for example, 110 ° C. (heating reflux) in the case of toluene. Is.
こうして得られるアンモニウム基を有するハイパーブランチポリマーと金属微粒子の複合体は、再沈殿等の精製処理を経て、粉末などの固形物の形態とすることができる。 The complex of the hyperbranched polymer having an ammonium group and the metal fine particles thus obtained can be in the form of a solid substance such as powder through a purification treatment such as reprecipitation.
本発明の感光性下地剤は、前記(a)アンモニウム基を有するハイパーブランチポリマーと(b)金属微粒子(好ましくはこれらよりなる複合体)と前記(c)重合性化合物と前記(d)光重合開始剤、(e)アミノ基を有する化合物、及び(f)多官能チオール、さらには所望によりその他成分とを含むものであって、該感光性下地剤は後述する[無電解めっき下地層]の形成時に用いるワニスの形態であってもよい。 The photosensitive base material of the present invention comprises the above-mentioned (a) hyperbranched polymer having an ammonium group, (b) metal fine particles (preferably a composite composed of these), the above-mentioned (c) polymerizable compound, and the above-mentioned (d) photopolymerization. It contains an initiator, (e) a compound having an amino group, (f) a polyfunctional thiol, and, if desired, other components, and the photosensitive base material is described in [Electrolytic Plating Base Layer] described later. It may be in the form of a varnish used at the time of formation.
<その他添加剤>
本発明の感光性下地剤は、本発明の効果を損なわない限りにおいて、さらに界面活性剤、各種表面調整剤等の添加剤や、増感剤、重合禁止剤、重合開始剤等の添加剤を適宜添加してもよい。<Other additives>
The photosensitive base material of the present invention further contains additives such as surfactants and various surface conditioners, and additives such as sensitizers, polymerization inhibitors, and polymerization initiators, as long as the effects of the present invention are not impaired. It may be added as appropriate.
上記界面活性剤としては、例えば、ポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンセチルエーテル、ポリオキシエチレンオレイルエーテル等のポリオキシエチレンアルキルエーテル類;ポリオキシエチレンオクチルフェニルエーテル、ポリオキシエチレンノニルフェニルエーテル等のポリオキシエチレンアルキルアリールエーテル類;ポリオキシエチレン・ポリオキシプロピレンブロックコポリマー類;ソルビタンモノラウレート、ソルビタンモノパルミテート、ソルビタンモノステアレート、ソルビタンモノオレエート、ソルビタントリステアレート、ソルビタントリオレエート等のソルビタン脂肪酸エステル類;ポリオキシエチレンソルビタンモノラウレート、ポリオキシエチレンソルビタンモノパルミテート、ポリオキシエチレンソルビタンモノステアレート、ポリオキシエチレンソルビタントリオレエート等のポリオキシエチレンノニオン系界面活性剤;エフトップ(登録商標)EF−301、同EF−303、同EF−352[以上、三菱マテリアル電子化成(株)製]、メガファック(登録商標)F−171、同F−173、同R−08、同R−30[以上、DIC(株)製]、Novec(登録商標)FC−430、同FC−431[以上、住友スリーエム(株)製]、アサヒガード(登録商標)AG−710[旭硝子(株)製]、サーフロン(登録商標)S−382[AGCセイミケミカル(株)製]等のフッ素系界面活性剤などが挙げられる。 Examples of the surfactant include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether; polyoxyethylene octylphenyl ether and polyoxy. Polyoxyethylene alkylaryl ethers such as ethylene nonylphenyl ether; polyoxyethylene / polyoxypropylene block copolymers; sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan tristearate, Solbitan fatty acid esters such as sorbitan trioleate; polyoxyethylene nonionic surfactants such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, and polyoxyethylene sorbitan trioleate. EF-TOP (registered trademark) EF-301, EF-303, EF-352 [above, manufactured by Mitsubishi Materials Electronics Chemical Co., Ltd.], Megafuck (registered trademark) F-171, F-173, R -08, R-30 [above, manufactured by DIC Co., Ltd.], Novec (registered trademark) FC-430, FC-431 [above, manufactured by Sumitomo 3M Co., Ltd.], Asahi Guard (registered trademark) AG-710 Fluorine-based surfactants such as [manufactured by Asahi Glass Co., Ltd.] and Surflon (registered trademark) S-382 [manufactured by AGC Seimi Chemical Co., Ltd.] can be mentioned.
また、上記表面調整剤としては、信越シリコーン(登録商標)KP−341[信越化学工業(株)製]等のシリコーン系レベリング剤;BYK(登録商標)−302、同307、同322、同323、同330、同333、同370、同375、同378[以上、ビックケミー・ジャパン(株)製]等のシリコーン系表面調整剤などが挙げられる。 Further, as the surface conditioner, a silicone-based leveling agent such as Shin-Etsu Silicone (registered trademark) KP-341 [manufactured by Shin-Etsu Chemical Co., Ltd.]; BYK (registered trademark) -302, 307, 322, 323. , 330, 333, 370, 375, 378 [above, manufactured by Big Chemie Japan Co., Ltd.] and the like.
これら添加剤は一種を単独で使用してもよく、また二種以上を併用してもよい。添加剤の使用量は、前記ハイパーブランチポリマーと金属微粒子より形成された複合体100質量部に対して、0.001〜50質量部が好ましく、0.005〜10質量部がより好ましく、0.01〜5質量部がより一層好ましい。 These additives may be used alone or in combination of two or more. The amount of the additive used is preferably 0.001 to 50 parts by mass, more preferably 0.005 to 10 parts by mass, and 0. 01 to 5 parts by mass is even more preferable.
[無電解めっき下地層]
上述の本発明の感光性下地剤は、基材上に塗布して薄膜を形成し、これをフォトリソグラフィーすることにより、パターン形成された無電解めっき下地層を形成することができる。当該下地層も本発明の対象である。[Electroless plating base layer]
The above-mentioned photosensitive base material of the present invention can be applied onto a base material to form a thin film, which is then photolithographically formed to form a patterned electroless plating base layer. The underlying layer is also the subject of the present invention.
前記基材としては特に限定されないが、非導電性基材又は導電性基材を好ましく使用できる。
非導電性基材としては、例えばガラス、セラミック等;ポリエチレン樹脂、ポリプロピレン樹脂、塩化ビニル樹脂、ナイロン(ポリアミド樹脂)、ポリイミド樹脂、ポリカーボネート樹脂、アクリル樹脂、PEN(ポリエチレンナフタラート)樹脂、PET(ポリエチレンテレフタラート)樹脂、PEEK(ポリエーテルエーテルケトン)樹脂、ABS(アクリロニトリル−ブタジエン−スチレン共重合体)樹脂、エポキシ樹脂、ポリアセタール樹脂等;紙などが挙げられる。これらはシート又はフィルム等の形態にて好適に使用され、この場合の厚さについては特に限定されない。
また導電性基材としては、例えばITO(スズドープ酸化インジウム)や、ATO(アンチモンドープ酸化スズ)、FTO(フッ素ドープ酸化スズ)、AZO(アルミニウムドープ酸化亜鉛)、GZO(ガリウムドープ酸化亜鉛)、また各種ステンレス鋼、アルミニウム並びにジュラルミン等のアルミニウム合金、鉄並びに鉄合金、銅並びに真鍮、燐青銅、白銅及びベリリウム銅等の銅合金、ニッケル並びにニッケル合金、そして、銀並びに洋銀等の銀合金などの金属等が挙げられる。
さらに上記非導電性基材上にこれらの導電性基材で薄膜が形成された基材も使用可能である。
また、上記基材は、三次元成形体であってもよい。The base material is not particularly limited, but a non-conductive base material or a conductive base material can be preferably used.
Examples of the non-conductive base material include glass, ceramic, etc .; polyethylene resin, polypropylene resin, vinyl chloride resin, nylon (polyamide resin), polyimide resin, polycarbonate resin, acrylic resin, PEN (polyethylene naphthalate) resin, PET (polyethylene). Telephthalate) resin, PEEK (polyether ether ketone) resin, ABS (acrylonitrile-butadiene-styrene copolymer) resin, epoxy resin, polyacetal resin, etc .; paper and the like can be mentioned. These are preferably used in the form of a sheet, a film, or the like, and the thickness in this case is not particularly limited.
Examples of the conductive substrate include ITO (tin-doped indium oxide), ATO (antimon-doped tin oxide), FTO (fluorine-doped tin oxide), AZO (aluminum-doped zinc oxide), GZO (gallium-doped zinc oxide), and the like. Various stainless steels, aluminum alloys such as aluminum and duralumin, iron and iron alloys, copper and brass, copper alloys such as phosphor bronze, white copper and beryllium copper, nickel and nickel alloys, and metals such as silver alloys such as silver and western silver. And so on.
Further, a substrate in which a thin film is formed of these conductive substrates on the non-conductive substrate can also be used.
Further, the base material may be a three-dimensional molded product.
上記アンモニウム基を有するハイパーブランチポリマーと金属微粒子、重合性化合物、光重合開始剤、アミノ基を有する化合物及び多官能チオールを含有する感光性下地剤より無電解めっき下地層を形成する具体的な方法としては、まず前記アンモニウム基を有するハイパーブランチポリマーと金属微粒子(好ましくはこれらよりなる複合体)と、重合性化合物、光重合開始剤、アミノ基を有する化合物及び多官能チオールとを適当な溶媒に溶解又は分散させてワニスの形態とし、該ワニスを、金属めっき被膜を形成する基材上にスピンコート法;ブレードコート法;ディップコート法;ロールコート法;バーコート法;ダイコート法;スプレーコート法;インクジェット法;ファウンテンペンナノリソグラフィー(FPN)、ディップペンナノリソグラフィー(DPN)などのペンリソグラフィー;活版印刷、フレキソ印刷、樹脂凸版印刷、コンタクトプリンティング、マイクロコンタクトプリンティング(μCP)、ナノインプリンティングリソグラフィー(NIL)、ナノトランスファープリンティング(nTP)などの凸版印刷法;グラビア印刷、エングレービングなどの凹版印刷法;平版印刷法;スクリーン印刷、謄写版などの孔版印刷法;オフセット印刷法等によって塗布し、その後、溶媒を蒸発・乾燥させることにより、薄層を形成する。
これらの塗布方法の中でもスピンコート法、スプレーコート法、インクジェット法、ペンリソグラフィー、コンタクトプリンティング、μCP、NIL及びnTPが好ましい。スピンコート法を用いる場合には、単時間で塗布することができるために、揮発性の高い溶液であっても利用でき、また、均一性の高い塗布を行うことができるという利点がある。スプレーコート法を用いる場合には、極少量のワニスで均一性の高い塗布を行うことができ、工業的に非常に有利となる。インクジェット法、ペンリソグラフィー、コンタクトプリンティング、μCP、NIL、nTPを用いる場合には、例えば配線などの微細パターンを効率的に形成(描画)することができ、工業的に非常に有利となる。A specific method for forming an electroless plating base layer from the hyperbranched polymer having an ammonium group and a photosensitive base material containing metal fine particles, a polymerizable compound, a photopolymerization initiator, a compound having an amino group and a polyfunctional thiol. First, the hyperbranched polymer having an ammonium group, metal fine particles (preferably a composite composed of these), a polymerizable compound, a photopolymerization initiator, a compound having an amino group, and a polyfunctional thiol are used as appropriate solvents. The varnish is dissolved or dispersed to form a varnish, and the varnish is applied onto a substrate on which a metal plating film is formed by a spin coating method; a blade coating method; a dip coating method; a roll coating method; a bar coating method; a die coating method; Inkjet method; Pen lithography such as fountain pen nanolithography (FPN) and dip pen nanolithography (DPN); typographic printing, flexo printing, resin letterpress printing, contact printing, microcontact printing (μCP), nanoimprinting lithography (NIL) ), Letterpress printing method such as nanotransfer printing (nTP); concave printing method such as gravure printing and engraving; flat plate printing method; stencil printing method such as screen printing and transcript printing; A thin layer is formed by evaporating and drying the solvent.
Among these coating methods, spin coating method, spray coating method, inkjet method, pen lithography, contact printing, μCP, NIL and nTP are preferable. When the spin coating method is used, since it can be applied in a single time, there is an advantage that even a highly volatile solution can be used and a highly uniform application can be performed. When the spray coating method is used, a highly uniform coating can be performed with a very small amount of varnish, which is industrially very advantageous. When the inkjet method, pen lithography, contact printing, μCP, NIL, or nTP is used, it is possible to efficiently form (draw) a fine pattern such as wiring, which is industrially very advantageous.
またここで用いられる溶媒としては、上記複合体(アンモニウム基を有するハイパーブランチポリマーと金属微粒子)、重合性化合物、光重合開始剤、アミノ基を有する化合物及び多官能チオールを溶解又は分散するものであれば特に限定されないが、たとえば、水;ベンゼン、トルエン、キシレン、エチルベンゼン、クロロベンゼン、ジクロロベンゼン等の芳香族炭化水素類;メタノール、エタノール、n−プロパノール、イソプロパノール、n−ブタノール、2−ブタノール、n−ヘキサノール、n−オクタノール、2−オクタノール、2−エチルヘキサノール等のアルコール類;メチルセロソルブ、エチルセロソルブ、ブチルセロソルブ、フェニルセロソルブ等のセロソルブ類;プロピレングリコールモノメチルエーテル(PGME)、プロピレングリコールモノエチルエーテル、プロピレングリコールモノブチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノブチルエーテル、ジプロピレングリコールモノメチルエーテル、トリエチレングリコールモノメチルエーテル、トリプロピレングリコールモノメチルエーテル、エチレングリコールジメチルエーテル、プロピレングリコールジメチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールジブチルエーテル、ジエチレングリコールエチルメチルエーテル、ジエチレングリコールブチルメチルエーテル、ジエチレングリコールイソプロピルメチルエーテル、ジプロピレングリコールジメチルエーテル、トリエチレングリコールジメチルエーテル、トリプロピレングリコールジメチルエーテル等のグリコールエーテル類;エチレングリコールモノメチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート(PGMEA)等のグリコールエステル類;テトラヒドロフラン(THF)、メチルテトラヒドロフラン、1,4−ジオキサン、ジエチルエーテル等のエーテル類;酢酸エチル、酢酸ブチル等のエステル類;アセトン、メチルエチルケトン(MEK)、メチルイソブチルケトン(MIBK)、シクロペンタノン、シクロヘキサノン等のケトン類;n−ヘプタン、n−ヘキサン、シクロヘキサン等の脂肪族炭化水素類;1,2−ジクロロエタン、クロロホルム等のハロゲン化脂肪族炭化水素類;N−メチル−2−ピロリドン(NMP)、N,N−ジメチルホルムアミド(DMF)、N,N−ジメチルアセトアミド等のアミド類;ジメチルスルホキシドなどが使用できる。これら溶媒は単独で使用してもよく、2種類以上の溶媒を混合してもよい。さらに、ワニスの粘度を調整する目的で、エチレングリコール、プロピレングリコール、ブチレングリコール等のグリコール類を添加してもよい。
また上記溶媒に溶解又は分散させる濃度は任意であるが、ワニス中の固形分濃度は0.005〜90質量%であり、好ましくは0.01〜80質量%である。ここで、固形分とは、ワニス中の溶剤を除いた成分のことである。The solvent used here is a solvent that dissolves or disperses the above-mentioned complex (hyperbranched polymer having an ammonium group and metal fine particles), a polymerizable compound, a photopolymerization initiator, a compound having an amino group, and a polyfunctional thiol. If there is, the present invention is not particularly limited, but for example, water; aromatic hydrocarbons such as benzene, toluene, xylene, ethylbenzene, chlorobenzene and dichlorobenzene; methanol, ethanol, n-propanol, isopropanol, n-butanol, 2-butanol, n. Alcohols such as -hexanol, n-octanol, 2-octanol, 2-ethylhexanol; cellosolves such as methyl cellosolve, ethyl cellosolve, butyl cellosolve, phenyl cellosolve; propylene glycol monomethyl ether (PGME), propylene glycol monoethyl ether, propylene Glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, triethylene glycol monomethyl ether, tripropylene glycol monomethyl ether, ethylene glycol dimethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, diethylene glycol Glycol ethers such as ethyl methyl ether, diethylene glycol butyl methyl ether, diethylene glycol isopropyl methyl ether, dipropylene glycol dimethyl ether, triethylene glycol dimethyl ether, tripropylene glycol dimethyl ether; ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate (PGMEA), etc. Glycol esters; ethers such as tetrahydrofuran (THF), methyl tetrahydrofuran, 1,4-dioxane, diethyl ether; esters such as ethyl acetate and butyl acetate; acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), cyclo Ketones such as pentanone and cyclohexanone; aliphatic hydrocarbons such as n-heptane, n-hexane and cyclohexane; halogenated aliphatic hydrocarbons such as 1,2-dichloroethane and chloroform; N-methyl-2-pyrrolidone (NMP), N , N-Dimethylformamide (DMF), N, N-Dimethylacetamide and other amides; dimethyl sulfoxide and the like can be used. These solvents may be used alone or may be a mixture of two or more kinds of solvents. Further, glycols such as ethylene glycol, propylene glycol and butylene glycol may be added for the purpose of adjusting the viscosity of the varnish.
The concentration to be dissolved or dispersed in the solvent is arbitrary, but the solid content concentration in the varnish is 0.005 to 90% by mass, preferably 0.01 to 80% by mass. Here, the solid content is a component in the varnish excluding the solvent.
溶媒の乾燥法としては、特に限定されるものではなく、例えば、ホットプレートやオーブンを用いて、適切な雰囲気下、すなわち大気、窒素等の不活性ガス、真空中等で蒸発させればよい。これにより、均一な成膜面を有する下地層を得ることが可能である。焼成温度は、溶媒を蒸発させることができれば特に限定されないが、40〜250℃で行うことが好ましい。 The method for drying the solvent is not particularly limited, and for example, it may be evaporated using a hot plate or an oven in an appropriate atmosphere, that is, in the atmosphere, an inert gas such as nitrogen, or in a vacuum. This makes it possible to obtain a base layer having a uniform film-forming surface. The firing temperature is not particularly limited as long as the solvent can be evaporated, but it is preferably performed at 40 to 250 ° C.
上述の如く得られた薄膜は、その後、所定のパターンを有するマスクを介して、露光量10〜3,000mJ/cm2程度で露光し、次に現像液を用いて現像することで、露光部が洗い出されることにより、パターン化された無電解めっき下地層が得られる。The thin film obtained as described above is then exposed to an exposure amount of about 10 to 3,000 mJ / cm 2 through a mask having a predetermined pattern, and then developed with a developing solution to obtain an exposed portion. Is washed out to obtain a patterned electroless plating base layer.
前記露光には、例えば水銀ランプ等の紫外線、遠紫外線、電子線、もしくはX線等が用いられる。紫外線照射に用いる光源としては、太陽光線、ケミカルランプ、低圧水銀灯、高圧水銀灯、メタルハライドランプ、キセノンランプ、UV−LED等が使用できる。 For the exposure, for example, ultraviolet rays such as a mercury lamp, far ultraviolet rays, electron beams, X-rays and the like are used. As the light source used for ultraviolet irradiation, sunlight, chemical lamps, low-pressure mercury lamps, high-pressure mercury lamps, metal halide lamps, xenon lamps, UV-LEDs and the like can be used.
また現像方法としては特に制限はなく、液盛り法、パドル法、ディッピング法、スプレー法、揺動浸漬法等の公知の方法により行うことができる。現像温度は20〜50℃の間が好ましく、現像時間は、例えば10秒〜10分間である。 The developing method is not particularly limited, and can be carried out by a known method such as a liquid filling method, a paddle method, a dipping method, a spray method, or a rocking dipping method. The developing temperature is preferably between 20 and 50 ° C., and the developing time is, for example, 10 seconds to 10 minutes.
前記現像液としては、有機溶剤、水又はアルカリ性水溶液などを用いることができる。有機溶剤としては、例えば、メタノール、エタノール、n−プロパノール、イソプロパノール等のアルコール類;メチルセロソルブ、エチルセロソルブ、ブチルセロソルブ、プロピレングリコールモノメチルエーテル(PGME)、3−メトキシ−3−メチル−1−ブタノール等のグリコールエーテル類;ジエチルエーテル、ジイソプロピルエーテル、ジブチルエーテル、テトラヒドロフラン(THF)、1,4−ジオキサン等のエーテル類;プロピレングリコールモノメチルエーテルアセテート(PGMEA)等のエーテルエステル類;酢酸エチル、酢酸ブチル等のエステル類;アセトン、シクロヘキサノン等のケトン類;N−メチル−2−ピロリドン(NMP)、N,N−ジメチルアセトアミド(DMAc)等のアミド類;ジメチルスルホキシド等のスルホキシド類などが挙げられる。
またアルカリ性水溶液としては、例えば、水酸化カリウム、水酸化ナトリウム等のアルカリ金属水酸化物の水溶液;水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、コリン等の水酸化第四級アンモニウムの水溶液;エタノールアミン、プロピルアミン、エチレンジアミン、モルホリン等のアミン水溶液などが挙げられる。
これら現像液は、単独で使用してもよく、2種類以上を混合してもよい。混合溶液としては、例えば、PGME/PGMEA混合溶液(質量比7:3)等が好適に使用できる。
これらの現像液には、現像性を調整するために、水;エチレングリコール、プロピレングリコール、ポリエチレングリコール等のグリコール類が加えられていてもよい。さらに、未露光部の除去性を高めるために、界面活性剤などが加えられていてもよい。
また、上記現像液は市販品を好適に使用でき、例えば、OK73シンナー[東京応化工業(株)]等が挙げられる。As the developing solution, an organic solvent, water, an alkaline aqueous solution, or the like can be used. Examples of the organic solvent include alcohols such as methanol, ethanol, n-propanol and isopropanol; methyl cellosolve, ethyl cellosolve, butyl cellosolve, propylene glycol monomethyl ether (PGME), 3-methoxy-3-methyl-1-butanol and the like. Glycol ethers; ethers such as diethyl ether, diisopropyl ether, dibutyl ether, tetrahydrofuran (THF), 1,4-dioxane; ether esters such as propylene glycol monomethyl ether acetate (PGMEA); esters such as ethyl acetate and butyl acetate Classes; ketones such as acetone and cyclohexanone; amides such as N-methyl-2-pyrrolidone (NMP) and N, N-dimethylacetamide (DMAc); sulfoxides such as dimethyl sulfoxide and the like.
Examples of the alkaline aqueous solution include an aqueous solution of an alkali metal hydroxide such as potassium hydroxide and sodium hydroxide; an aqueous solution of quaternary ammonium hydroxide such as tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline; ethanolamine. , Aqueous amine solutions such as propylamine, ethylenediamine and morpholine.
These developers may be used alone or in combination of two or more. As the mixed solution, for example, a PGME / PGMEA mixed solution (mass ratio 7: 3) or the like can be preferably used.
Water; glycols such as ethylene glycol, propylene glycol, and polyethylene glycol may be added to these developers in order to adjust the developability. Further, a surfactant or the like may be added in order to improve the removability of the unexposed portion.
Further, as the developer, a commercially available product can be preferably used, and examples thereof include OK73 thinner [Tokyo Ohka Kogyo Co., Ltd.].
現像後、水あるいは一般有機溶剤による洗浄を、例えば20〜90秒程度実施することが好ましい。その後、圧縮空気若しくは圧縮窒素を用いて又はスピニングにより風乾することで基材上の水分を除去する。必要に応じてホットプレート又はオーブンなどを用いて加熱乾燥し、パターニングされた無電解めっき下地層を得る。 After development, washing with water or a general organic solvent is preferably carried out for, for example, about 20 to 90 seconds. The moisture on the substrate is then removed by air drying with compressed air or compressed nitrogen or by spinning. If necessary, heat-dry it using a hot plate or an oven to obtain a patterned electroless plating base layer.
[無電解めっき処理、金属めっき膜、金属被膜基材]
上記のようにして得られた基材上に形成された無電解めっき下地層を無電解めっきすることにより、無電解めっき下地層の上に金属めっき膜が形成される。こうして得られる金属めっき膜、並びに、基材上に無電解めっき下地層、金属めっき膜の順にて具備する金属被膜基材も本発明の対象である。
無電解めっき処理(工程)は特に限定されず、一般的に知られている何れの無電解めっき処理にて行うことができ、例えば、従来一般に知られている無電解めっき液を用い、該めっき液(浴)に基材上に形成された無電解めっき下地層を浸漬する方法が一般的である。[Electroless plating, metal plating film, metal film base material]
By electroless plating the electroless plating base layer formed on the base material obtained as described above, a metal plating film is formed on the electroless plating base layer. The metal plating film thus obtained, and the metal coating base material provided on the base material in the order of the electroless plating base layer and the metal plating film are also the objects of the present invention.
The electroless plating treatment (process) is not particularly limited and can be performed by any generally known electroless plating treatment. For example, the plating is performed using a conventionally known electroless plating solution. A general method is to immerse the electroless plating base layer formed on the substrate in a liquid (bath).
前記無電解めっき液は、主として金属イオン(金属塩)、錯化剤、還元剤を主に含有し、その他用途に合わせてpH調整剤、pH緩衝剤、反応促進剤(第二錯化剤)、安定剤、界面活性剤(めっき膜への光沢付与用途、被処理面の濡れ性改善用途など)などが適宜含まれてなる。
ここで無電解めっきにより形成される金属めっき膜に用いられる金属としては、鉄、コバルト、ニッケル、銅、パラジウム、銀、スズ、白金、金及びそれらの合金が挙げられ、目的に応じて適宜選択される。
また上記錯化剤、還元剤についても金属イオンに応じて適宜選択すればよい。
また無電解めっき液は市販のめっき液を使用してもよく、例えばメルテックス(株)製の無電解ニッケルめっき薬品(メルプレート(登録商標)NIシリーズ)、無電解銅めっき薬品(メルプレート(登録商標)CUシリーズ);奥野製薬工業(株)製の無電解ニッケルめっき液(ICPニコロン(登録商標)シリーズ、トップピエナ650)、無電解銅めっき液(OPC−700無電解銅M−K、ATSアドカッパーIW、同CT、OPCカッパー(登録商標)AFシリーズ、同HFS、同NCA)、無電解スズめっき液(サブスターSN−5)、無電解金めっき液(フラッシュゴールド330、セルフゴールドOTK−IT)、無電解銀めっき液(ムデンシルバー);小島化学薬品(株)製の無電解パラジウムめっき液(パレットII)、無電解金めっき液(ディップGシリーズ、NCゴールドシリーズ);佐々木化学薬品(株)製の無電解銀めっき液(エスダイヤAG−40);日本カニゼン(株)製の無電解ニッケルめっき液(カニゼン(登録商標)シリーズ、シューマー(登録商標)シリーズ、シューマー(登録商標)カニブラック(登録商標)シリーズ)、無電解パラジウムめっき液(S−KPD);ダウケミカル社製の無電解銅めっき液(キューポジット(登録商標)カッパーミックスシリーズ、サーキュポジット(登録商標)シリーズ)、無電解パラジウムめっき液(パラマース(登録商標)シリーズ)、無電解ニッケルめっき液(デュラポジット(登録商標)シリーズ)、無電解金めっき液(オーロレクトロレス(登録商標)シリーズ)、無電解スズめっき液(ティンポジット(登録商標)シリーズ)、上村工業(株)製の無電解銅めっき液(スルカップ(登録商標)ELC−SP、同PSY、同PCY、同PGT、同PSR、同PEA)、アトテックジャパン(株)製の無電解銅めっき液(プリントガント(登録商標)PVE)等を好適に用いることができる。The electroless plating solution mainly contains a metal ion (metal salt), a complexing agent, and a reducing agent, and is a pH adjuster, a pH buffer, and a reaction accelerator (second complexing agent) according to other uses. , Stabilizers, surfactants (for imparting gloss to the plating film, for improving the wettability of the surface to be treated, etc.) and the like are appropriately included.
Examples of the metal used for the metal plating film formed by electroless plating include iron, cobalt, nickel, copper, palladium, silver, tin, platinum, gold and alloys thereof, which are appropriately selected according to the purpose. Will be done.
Further, the complexing agent and the reducing agent may be appropriately selected according to the metal ions.
A commercially available electroless plating solution may be used as the electroless plating solution. For example, an electroless nickel plating chemical (Melplate (registered trademark) NI series) manufactured by Meltex Co., Ltd. and an electroless copper plating chemical (Melplate (Melplate)) (Registered trademark) CU series); Electroless nickel plating solution (ICP Nicolon (registered trademark) series, Top Piena 650), electroless copper plating solution (OPC-700 electroless copper M-K,) manufactured by Okuno Pharmaceutical Co., Ltd. ATS Ad Copper IW, CT, OPC Copper (registered trademark) AF series, HFS, NCA), electroless tin plating solution (Substar SN-5), electroless gold plating solution (flash gold 330, self gold OTK) -IT), electroless silver plating solution (muden silver); electroless palladium plating solution (pallet II) manufactured by Kojima Chemical Co., Ltd., electroless gold plating solution (dip G series, NC gold series); Sasaki Chemical Electroless silver plating solution manufactured by Yakuhin Co., Ltd. (Sdia AG-40); Electroless nickel plating solution manufactured by Nippon Kanizen Co., Ltd. (Kanizen (registered trademark) series, Schumer (registered trademark) series, Schumaer (registered trademark)) Kani Black (registered trademark) series), electroless palladium plating solution (S-KPD); electroless copper plating solution manufactured by Dow Chemical Co., Ltd. (Cuposit (registered trademark) Coppermix series, Circuposit (registered trademark) series), Electroless palladium plating solution (Palamers (registered trademark) series), electroless nickel plating solution (Duraposit (registered trademark) series), electroless gold plating solution (Aurorectores (registered trademark) series), electroless tin plating solution (Tinposit (registered trademark) series), electroless copper plating solution manufactured by Uemura Kogyo Co., Ltd. (Sulcup (registered trademark) ELC-SP, PSY, PCY, PGT, PSR, PEA), Atotech Japan An electroless copper plating solution (Print Gant (registered trademark) PVE) manufactured by Co., Ltd. can be preferably used.
上記無電解めっき工程は、めっき浴の温度、pH、浸漬時間、金属イオン濃度、撹拌の有無や撹拌速度、空気・酸素の供給の有無や供給速度等を調節することにより、金属被膜の形成速度や膜厚を制御することができる。 In the electroless plating step, the formation speed of the metal film is adjusted by adjusting the temperature, pH, immersion time, metal ion concentration, presence / absence of stirring and stirring speed, presence / absence of supply of air / oxygen, supply speed, and the like. And the film thickness can be controlled.
このようにして、本発明の感光性下地剤を用いて得られた下地層上に金属めっき膜を形成した本発明の金属被膜基材は、基材として透明基材を使用した場合、めっき被膜を形成した側とは反対側の面から透明基材を観察した際に見える面が黒色を呈するものとすることができる。
従って、フォトリソグラフィーによりパターニングされた下地層上に金属めっき膜を施すことにより、パターン化されためっき被膜形成部分の裏面が黒色である金属被膜基材を得られることから、該基材を画像視認性の高い透明電極として使用することが可能となる。In this way, the metal coating base material of the present invention in which the metal plating film is formed on the base layer obtained by using the photosensitive base material of the present invention is a plating coating when a transparent base material is used as the base material. The surface that can be seen when the transparent base material is observed from the surface opposite to the side on which the transparent substrate is formed can be black.
Therefore, by applying a metal plating film on the base layer patterned by photolithography, a metal coating base material in which the back surface of the patterned plating film forming portion is black can be obtained. It can be used as a highly transparent transparent electrode.
以下、本発明を実施例によりさらに具体的に説明するが、これによって本発明が限定されるものではない。実施例において、試料の物性測定は、下記の条件のもとで下記の装置を使用して行った。 Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto. In the examples, the physical characteristics of the sample were measured using the following devices under the following conditions.
(1)GPC(ゲル浸透クロマトグラフィー)
装置:東ソー(株)製 HLC−8220GPC
カラム:昭和電工(株)製 Shodex(登録商標)GPC KF−804L + 同KF−803L
カラム温度:40℃
溶媒:テトラヒドロフラン
検出器:UV(254nm)、RI
(2)1H NMRスペクトル
装置:日本電子(株)製 JNM−L400
溶媒:CDCl3
基準ピーク:テトラメチルシラン(0.00ppm)
(3)13C NMRスペクトル
装置:日本電子(株)製 JNM−ECA700
溶媒:CDCl3
緩和試薬:トリスアセチルアセトナートクロム(Cr(acac)3)
基準ピーク:CDCl3(77.0ppm)
(4)ICP発光分析(誘導結合プラズマ発光分析)
装置:(株)島津製作所製 ICPM−8500
(5)TEM(透過型電子顕微鏡)画像
装置:(株)日立ハイテクノロジーズ製 H−8000
(6)パターン露光(マスクアライナ)
装置:ズースマイクロテック社製 MA6
(7)現像
装置:アクテス京三(株)製 小型現像装置ADE−3000S
(8)デジタルマイクロスコープ画像
装置:(株)キーエンス製 VHX−2000(1) GPC (Gel Permeation Chromatography)
Equipment: HLC-8220GPC manufactured by Tosoh Corporation
Column: Showa Denko Corporation Shodex® GPC KF-804L + KF-803L
Column temperature: 40 ° C
Solvent: Tetrahydrofuran Detector: UV (254 nm), RI
(2) 1 1 H NMR spectrum device: JNM-L400 manufactured by JEOL Ltd.
Solvent: CDCl 3
Reference peak: Tetramethylsilane (0.00ppm)
(3) 13 C NMR spectrum device: JNM-ECA700 manufactured by JEOL Ltd.
Solvent: CDCl 3
Relaxation reagent: Trisacetylacetonate chromium (Cr (acac) 3 )
Reference peak: CDCl 3 (77.0 ppm)
(4) ICP emission spectrometry (inductively coupled plasma emission spectrometry)
Equipment: ICPM-8500 manufactured by Shimadzu Corporation
(5) TEM (transmission electron microscope) imaging device: H-8000 manufactured by Hitachi High-Technologies Corporation
(6) Pattern exposure (mask aligner)
Equipment: MA6 manufactured by Susu Microtech
(7) Developing device: Small developing device ADE-3000S manufactured by Actes Kyozo Co., Ltd.
(8) Digital microscope imaging device: VHX-2000 manufactured by KEYENCE CORPORATION
また使用した略号は以下のとおりである。
HPS:ハイパーブランチポリスチレン[日産化学工業(株)製 ハイパーテック(登録商標)HPS−200]
8KX−078:アクリル変性ポリマー[大成ファインケミカル社製アクリット(登録商標)8KX−078]
8KX−078HC:アクリル変性エチレンオキサイドポリマー(分子量35,000)[大成ファインケミカル社製アクリット(登録商標)8KX−078HC]
8KX−078H:アクリル変性ポリマー[大成ファインケミカル社製アクリット(登録商標)8KX−078H]
8KX−128A:アクリル変性ポリマー[大成ファインケミカル社製アクリット(登録商標)8KX−128A]
OXE−01:1,2−オクタンジオン1−[4−(フェニルチオ)−2−(O−ベンゾイルオキシム)](光重合開始剤)[BASFジャパン(株)製 IRGACURE(登録商標)OXE 01]
IPA:イソプロパノール
IPE:ジイソプロピルエーテル
n−PrOH:n−プロパノール
MIBK:メチルイソブチルケトン
KBM−903:3−アミノプロピルトリメトキシシラン[信越化学工業株式会社製 信越シリコーン(登録商標)KBM−903]
カレンズMT PE1:ペンタエリスリトール テトラキス(3−メルカプトブチレート)[昭和電工株式会社製 カレンズMT(登録商標)PE1)The abbreviations used are as follows.
HPS: Hyperbranched polystyrene [Hypertech (registered trademark) HPS-200 manufactured by Nissan Chemical Industries, Ltd.]
8KX-078: Acrylic modified polymer [Acryt (registered trademark) 8KX-078 manufactured by Taisei Fine Chemicals Co., Ltd.]
8KX-078HC: Acrylic-modified ethylene oxide polymer (molecular weight 35,000) [Acryt (registered trademark) 8KX-078HC manufactured by Taisei Fine Chemicals Co., Ltd.]
8KX-078H: Acrylic modified polymer [Acryt (registered trademark) 8KX-078H manufactured by Taisei Fine Chemicals Co., Ltd.]
8KX-128A: Acrylic modified polymer [Acryt (registered trademark) 8KX-128A manufactured by Taisei Fine Chemicals Co., Ltd.]
OXE-01: 1,2-octanedione 1- [4- (phenylthio) -2- (O-benzoyl oxime)] (photopolymerization initiator) [IRGACURE (registered trademark) OXE 01 manufactured by BASF Japan Ltd.]
IPA: Isopropanol IPE: Diisopropyl ether n-PrOH: n-propanol MIBK: Methyl isobutyl ketone KBM-903: 3-Aminopropyltrimethoxysilane [Shin-Etsu Silicone (registered trademark) KBM-903 manufactured by Shin-Etsu Chemical Co., Ltd.]
Karenz MT PE1: Pentaerythritol Tetrakis (3-mercaptobutyrate) [Karens MT (registered trademark) PE1 manufactured by Showa Denko KK)
[製造例1]HPS−Clの製造
500mLの反応フラスコに、塩化スルフリル[キシダ化学(株)製]27g及びクロロホルム50gを仕込み、撹拌して均一に溶解させた。この溶液を窒素気流下0℃まで冷却した。
別の300mLの反応フラスコに、ジチオカルバメート基を分子末端に有するハイパーブランチポリマーHPS15g及びクロロホルム150gを仕込み、窒素気流下均一になるまで撹拌した。
前述の0℃に冷却されている塩化スルフリル/クロロホルム溶液中に、窒素気流下、HPS/クロロホルム溶液が仕込まれた前記300mLの反応フラスコから、送液ポンプを用いて、該溶液を反応液の温度が−5〜5℃となるように60分間かけて加えた。添加終了後、反応液の温度を−5〜5℃に保持しながら6時間撹拌した。
さらにこの反応液へ、シクロヘキセン[東京化成工業(株)製]16gをクロロホルム50gに溶かした溶液を、反応液の温度が−5〜5℃となるように加えた。添加終了後、この反応液をIPA1,200gに添加してポリマーを沈殿させた。この沈殿をろ取して得られた白色粉末をクロロホルム100gに溶解し、これをIPA500gに添加してポリマーを再沈殿させた。この沈殿物を減圧ろ過し、真空乾燥して、塩素原子を分子末端に有するハイパーブランチポリマー(HPS−Cl)8.5gを白色粉末として得た(収率99%)。
得られたHPS−Clの1H NMRスペクトルを図1に示す。ジチオカルバメート基由来のピーク(4.0ppm、3.7ppm)が消失していることから、得られたHPS−Clは、HPS分子末端のジチオカルバメート基がほぼ全て塩素原子に置換されていることが明らかとなった。また、得られたHPS−ClのGPCによるポリスチレン換算で測定される重量平均分子量Mwは14,000、分散度Mw/Mnは2.9であった。[Production Example 1] Production of HPS-Cl
Sulfuryl chloride [manufactured by Kishida Chemical Co., Ltd.] (27 g) and chloroform (50 g) were placed in a 500 mL reaction flask, and the mixture was stirred and uniformly dissolved. The solution was cooled to 0 ° C. under a nitrogen stream.
In another 300 mL reaction flask, 15 g of hyperbranched polymer HPS having a dithiocarbamate group at the end of the molecule and 150 g of chloroform were charged and stirred until uniform under a nitrogen stream.
From the 300 mL reaction flask in which the HPS / chloroform solution was charged under a nitrogen stream in the above-mentioned sulfuryl chloride / chloroform solution cooled to 0 ° C., the solution was subjected to the temperature of the reaction solution using a liquid feed pump. Was added over 60 minutes so that the temperature was -5 to 5 ° C. After completion of the addition, the mixture was stirred for 6 hours while maintaining the temperature of the reaction solution at −5 to 5 ° C.
Further, a solution prepared by dissolving 16 g of cyclohexene [manufactured by Tokyo Chemical Industry Co., Ltd.] in 50 g of chloroform was added to the reaction solution so that the temperature of the reaction solution was −5 to 5 ° C. After completion of the addition, this reaction solution was added to 1,200 g of IPA to precipitate the polymer. The white powder obtained by filtering this precipitate was dissolved in 100 g of chloroform, and this was added to 500 g of IPA to reprecipitate the polymer. The precipitate was filtered under reduced pressure and dried under vacuum to obtain 8.5 g of a hyperbranched polymer (HPS-Cl) having a chlorine atom at the molecular terminal as a white powder (yield 99%).
The 1 H NMR spectrum of the obtained HPS-Cl is shown in FIG. Since the peak derived from the dithiocarbamate group (4.0 ppm, 3.7 ppm) has disappeared, the obtained HPS-Cl has almost all the dithiocarbamate groups at the terminal of the HPS molecule replaced with chlorine atoms. It became clear. The weight average molecular weight Mw of the obtained HPS-Cl measured by GPC in terms of polystyrene was 14,000, and the dispersity Mw / Mn was 2.9.
[製造例2]HPS−N(Me)2OctClの製造
冷却器を設置した100mLの反応フラスコに、製造例1で製造したHPS−Cl4.6g(30mmol)及びクロロホルム15gを仕込み、均一になるまで撹拌した。この溶液へ、ジメチルオクチルアミン[花王(株)製 ファーミン(登録商標)DM0898]5.0g(31.5mmol)をクロロホルム7.5gに溶解させた溶液を加え、さらにIPA7.5gを加えた。この混合物を、窒素雰囲気下65℃で40時間撹拌した。
液温30℃まで冷却後、溶媒を留去した。得られた残渣を、クロロホルム60gに溶解し、この溶液をIPE290gに添加して再沈精製した。析出したポリマーを減圧ろ過し、50℃で真空乾燥して、ジメチルオクチルアンモニウム基を分子末端に有するハイパーブランチポリマー(HPS−N(Me)2OctCl)9.3gを白色粉末として得た。
得られたHPS−N(Me)2OctClの13C NMRスペクトルを図2に示す。ベンゼン環のピークと、オクチル基末端のメチル基のピークから、得られたHPS−N(Me)2OctClは、HPS−Cl分子末端の塩素原子がほぼ定量的にアンモニウム基に置換されていることが明らかとなった。また、HPS−ClのMw(14,000)及びアンモニウム基導入率(100%)から算出されるHPS−N(Me)2OctClの重量平均分子量Mwは28,000となった。[Manufacturing Example 2] Production of HPS-N (Me) 2 OctCl
4.6 g (30 mmol) of HPS-Cl and 15 g of chloroform prepared in Production Example 1 were placed in a 100 mL reaction flask equipped with a cooler, and the mixture was stirred until uniform. To this solution was added a solution in which 5.0 g (31.5 mmol) of dimethyloctylamine [Farmin (registered trademark) DM0898 manufactured by Kao Corporation] was dissolved in 7.5 g of chloroform, and 7.5 g of IPA was further added. The mixture was stirred at 65 ° C. for 40 hours under a nitrogen atmosphere.
After cooling to a liquid temperature of 30 ° C., the solvent was distilled off. The obtained residue was dissolved in 60 g of chloroform, and this solution was added to 290 g of IPE for reprecipitation purification. The precipitated polymer was filtered under reduced pressure and vacuum dried at 50 ° C. to obtain 9.3 g of a hyperbranched polymer (HPS-N (Me) 2 OctCl) having a dimethyloctylammonium group at the molecular terminal as a white powder.
The 13 C NMR spectrum of the obtained HPS-N (Me) 2 OctCl is shown in FIG. In the HPS-N (Me) 2 OctCl obtained from the peak of the benzene ring and the peak of the methyl group at the terminal of the octyl group, the chlorine atom at the terminal of the HPS-Cl molecule is almost quantitatively replaced with the ammonium group. Became clear. The weight average molecular weight Mw of HPS-N (Me) 2 OctCl calculated from the Mw (14,000) of HPS-Cl and the introduction rate of ammonium groups (100%) was 28,000.
[製造例3]HBP−Pd−1の製造
冷却器を設置した100mLの反応フラスコに、酢酸パラジウム[川研ファインケミカル(株)製]4.2g及びクロロホルム40gを仕込み、均一になるまで撹拌した。この溶液へ、製造例2で製造したHPS−N(Me)2OctCl8.0gをクロロホルム100gに溶解させた溶液を、滴下ロートを使用して加えた。この滴下ロート内を、クロロホルム20g及びエタノール40gを使用して前記反応フラスコへ洗い込んだ。この混合物を、窒素雰囲気下60℃で8時間撹拌した。
液温30℃まで冷却後、この溶液をIPE/ヘキサン溶液(質量比10:1)2,000gに添加して再沈精製した。析出したポリマーを減圧ろ過し、50℃で真空乾燥して、アンモニウム基を分子末端に有するハイパーブランチポリマーとPd粒子の複合体(Pd[HPS−N(Me)2OctCl])8.9gを黒色粉末として得た(HBP−Pd−1)。
ICP発光分析の結果から、得られたPd[HPS−N(Me)2OctCl](HBP−Pd−1)のPd含有量は20質量%であった。また、TEM(透過型電子顕微鏡)画像から、そのPd粒子径はおよそ2〜4nmであった。[Production Example 3] Production of HBP-Pd-1 4.2 g of palladium acetate [manufactured by Kawaken Fine Chemicals Co., Ltd.] and 40 g of chloroform were placed in a 100 mL reaction flask equipped with a condenser and stirred until uniform. To this solution, a solution prepared by dissolving 8.0 g of HPS-N (Me) 2 OctCl produced in Production Example 2 in 100 g of chloroform was added using a dropping funnel. The inside of the dropping funnel was washed into the reaction flask using 20 g of chloroform and 40 g of ethanol. The mixture was stirred at 60 ° C. for 8 hours under a nitrogen atmosphere.
After cooling to a liquid temperature of 30 ° C., this solution was added to 2,000 g of an IPE / hexane solution (mass ratio 10: 1) for reprecipitation purification. The precipitated polymer is filtered under reduced pressure and vacuum dried at 50 ° C. to blacken 8.9 g of a complex (Pd [HPS-N (Me) 2 OctCl]) of a hyperbranched polymer having an ammonium group at the molecular end and Pd particles. Obtained as a powder (HBP-Pd-1).
From the result of ICP emission analysis, the Pd content of the obtained Pd [HPS-N (Me) 2 OctCl] (HBP-Pd-1) was 20% by mass. Further, from the TEM (transmission electron microscope) image, the Pd particle size was about 2 to 4 nm.
[製造例4]HBP−Pd−2の製造
冷却器を設置した100mLの反応フラスコに、酢酸パラジウム[川研ファインケミカル(株)製]2.1g及びクロロホルム20gを仕込み、均一になるまで撹拌した。この溶液へ、製造例2で製造したHPS−N(Me)2OctCl9.0gをクロロホルム120gに溶解させた溶液を、滴下ロートを使用して加えた。この滴下ロート内を、クロロホルム20g及びエタノール40gを使用して前記反応フラスコへ洗い込んだ。この混合物を、窒素雰囲気下60℃で8時間撹拌した。
液温30℃まで冷却後、この溶液をIPE/ヘキサン溶液(質量比10:1)2,000gに添加して再沈精製した。析出したポリマーを減圧ろ過し、50℃で真空乾燥して、アンモニウム基を分子末端に有するハイパーブランチポリマーとPd粒子の複合体(Pd[HPS−N(Me)2OctCl])9.3gを黒色粉末として得た(HBP−Pd−2)。
ICP発光分析の結果から、得られたPd[HPS−N(Me)2OctCl](HBP−Pd−2)のPd含有量は10質量%であった。また、TEM(透過型電子顕微鏡)画像から、そのPd粒子径はおよそ2〜4nmであった。[Production Example 4] Production of HBP-Pd-2 2.1 g of palladium acetate [manufactured by Kawaken Fine Chemicals Co., Ltd.] and 20 g of chloroform were placed in a 100 mL reaction flask equipped with a condenser, and the mixture was stirred until uniform. A solution prepared by dissolving 9.0 g of HPS-N (Me) 2 OctCl prepared in Production Example 2 in 120 g of chloroform was added to this solution using a dropping funnel. The inside of the dropping funnel was washed into the reaction flask using 20 g of chloroform and 40 g of ethanol. The mixture was stirred at 60 ° C. for 8 hours under a nitrogen atmosphere.
After cooling to a liquid temperature of 30 ° C., this solution was added to 2,000 g of an IPE / hexane solution (mass ratio 10: 1) for reprecipitation purification. The precipitated polymer is filtered under reduced pressure and vacuum dried at 50 ° C. to blacken 9.3 g of a complex (Pd [HPS-N (Me) 2 OctCl]) of a hyperbranched polymer having an ammonium group at the end of the molecule and Pd particles. Obtained as a powder (HBP-Pd-2).
From the result of ICP emission analysis, the Pd content of the obtained Pd [HPS-N (Me) 2 OctCl] (HBP-Pd-2) was 10% by mass. Further, from the TEM (transmission electron microscope) image, the Pd particle size was about 2 to 4 nm.
[参考例1]無電解ニッケルめっき液の調製
2Lのビーカーに、カニゼン(登録商標)ブルーシューマー[日本カニゼン(株)製]40mLを仕込み、さらに純水を加えて溶液の総量を200mLとした。この溶液を撹拌し無電解ニッケルめっき液とした。[Reference Example 1] Preparation of electroless nickel plating solution 40 mL of Kanigen (registered trademark) Blue Schumer [manufactured by Japan Kanigen Co., Ltd.] was charged in a 2 L beaker, and pure water was further added to bring the total amount of the solution to 200 mL. This solution was stirred to obtain an electroless nickel plating solution.
[実施例1]
[感光性下地剤の調製]
Pd触媒として製造例3で製造したHBP−Pd−1 8質量部、アミノ基を有する化合物としてKBM−903 1質量部、重合性高分子化合物として表1に記載した8KX−078H 86質量部、多官能チオール(RSHとも称する)としてカレンズMT PE1 0.45質量部、重合開始剤としてOXE−01 4.54質量部、及び溶媒としてn−PrOHとMIBKを8:1で混合し非溶媒成分(混合物中の溶媒を除く全成分)濃度5質量%の無電解めっき用の感光性下地剤を調製した。なお、各成分を均一に混合しやすいように、n−PrOH:MIBK=8:1の一部で予め各成分をそれぞれ溶解させたものを混合した。
なお、上記で使用したHBP−Pd−1は以下の手順にて事前にアミノ基を有する化合物と混合してアンミン錯体を形成させ、これを感光性下地剤の他の成分と混合した。
<アンミン錯体形成>
上記製造例3で製造したHBP−Pd−1 500mgをn−PrOH:MIBK=8:1に溶解し(溶液1)、溶液総量を5gとした後、30分間ミックスローターで攪拌した。
一方、アミノ基を有する化合物としてKBM−903 1.25gをn−PrOH:MIBK=8:1に溶解し(溶液2)、この溶液総量を5gとし、ミックスローターで攪拌した。さらにこの溶液2をn−PrOH:MIBK=8:1にて10倍希釈した。
溶液1(HBP−PD−1)に希釈した溶液2(アミノ基含有化合物)を1g添加し、さらにn−PrOH:MIBK=8:1を加えて、総量を10gとした。
本手順により得られたHBP−PD−1 5.625質量%溶液を160mg用いた。[Example 1]
[Preparation of photosensitive base material]
8 parts by mass of HBP-Pd-1 produced in Production Example 3 as a Pd catalyst, 1 part by mass of KBM-903 as a compound having an amino group, 86 parts by mass of 8KX-078H shown in Table 1 as a polymerizable polymer compound, many 0.45 parts by mass of Karenz MT PE1 as a functional thiol (also called RSH), 4.54 parts by mass of OXE-01 as a polymerization initiator, and n-PrOH and MIBK as a solvent are mixed at a ratio of 8: 1 to form a non-solvent component (mixture). A photosensitive substrate for electroless plating having a concentration of 5% by mass (all components excluding the solvent inside) was prepared. In order to facilitate uniform mixing of each component, a part of n-PrOH: MIBK = 8: 1 in which each component was dissolved in advance was mixed.
The HBP-Pd-1 used above was previously mixed with a compound having an amino group to form an ammine complex according to the following procedure, and this was mixed with other components of the photosensitive base material.
<Ammonia complex formation>
500 mg of HBP-Pd-1 produced in Production Example 3 was dissolved in n-PrOH: MIBK = 8: 1 (solution 1), the total amount of the solution was 5 g, and the mixture was stirred with a mix rotor for 30 minutes.
On the other hand, 1.25 g of KBM-903 as a compound having an amino group was dissolved in n-PrOH: MIBK = 8: 1 (solution 2), the total amount of this solution was 5 g, and the mixture was stirred with a mix rotor. Further, this solution 2 was diluted 10-fold with n-PrOH: MIBK = 8: 1.
1 g of diluted solution 2 (amino group-containing compound) was added to solution 1 (HBP-PD-1), and n-PrOH: MIBK = 8: 1 was further added to bring the total amount to 10 g.
160 mg of the HBP-PD-1 5.625 mass% solution obtained by this procedure was used.
[塗布]
上記感光性下地剤2.5mLを、液厚25μmのバーを用い、バーコーターでPETフィルム(東洋紡(株)製、A4100)の裏面(易接着未処理面)に塗布した。この基材を2分静置後、80℃のオーブンで5分間乾燥し、基材上全面に下地層を具備した基材を得た。[Application]
2.5 mL of the above photosensitive base material was applied to the back surface (easily adhesive untreated surface) of a PET film (A4100 manufactured by Toyobo Co., Ltd.) with a bar coater using a bar having a liquid thickness of 25 μm. This base material was allowed to stand for 2 minutes and then dried in an oven at 80 ° C. for 5 minutes to obtain a base material having a base layer on the entire surface of the base material.
[パターニング(露光及び現像)]
得られた下地層を、3μm、5μm、7μm、9μm幅のパターンが描かれたフォトマスクを設置したマスクアライナで、空気雰囲気下、照度11.6mW/cm2のi線を露光量600mJ/cm2となるように照射し露光した。
露光した基材を、シャワーノズルを設置した現像装置を使用して現像した。現像は、基材を300rpmで回転させながら、水で60秒間洗浄した後、回転数を1,500rpmに上げて水を振り切ることで基材上にパターニングされた無電解めっき下地層を具備した基材を得た。[Patterning (exposure and development)]
The obtained base layer was exposed to i-line with an illuminance of 11.6 mW / cm 2 and an exposure amount of 600 mJ / cm in an air atmosphere with a mask aligner on which a photomask having a width of 3 μm, 5 μm, 7 μm, and 9 μm was drawn. It was irradiated and exposed so as to be 2.
The exposed substrate was developed using a developing apparatus equipped with a shower nozzle. In the development, the base material is rotated at 300 rpm, washed with water for 60 seconds, and then the rotation speed is increased to 1,500 rpm to shake off the water to provide a group having an electroless plating base layer patterned on the base material. I got the wood.
[無電解めっき]
得られた基材を、80℃に加熱した参考例1で調製した無電解ニッケルめっき液中に2分間浸漬した。その後、取り出した基材を水洗し、100℃のホットプレートで3分間乾燥することでめっき基材を得た。[Electroless plating]
The obtained substrate was immersed in the electroless nickel plating solution prepared in Reference Example 1 heated to 80 ° C. for 2 minutes. Then, the removed base material was washed with water and dried on a hot plate at 100 ° C. for 3 minutes to obtain a plated base material.
[比較例1乃至3]
重合性高分子化合物を表1に記載したものに変更した以外は実施例1と同様に操作した。
実施例1ならびに比較例1乃至3から得られた各めっき基材を、以下の基準に基づき評価した。[Comparative Examples 1 to 3]
The operation was carried out in the same manner as in Example 1 except that the polymerizable polymer compound was changed to that shown in Table 1.
Each plating substrate obtained from Example 1 and Comparative Examples 1 to 3 was evaluated based on the following criteria.
<現像性評価基準>
○ 現像された
△ 部分的に現像された
× 現像されない
<めっき形成状態評価基準>
○ マスクパターンどおりに下地層のパターンが得られ下地層パターン部にめっきが析出(パターン化されためっき被膜が形成)
× パターン化されためっき被膜が形成されない
結果を表1に示す。<Developability evaluation criteria>
○ Developed △ Partially developed × Not developed <Plating formation condition evaluation criteria>
○ The pattern of the base layer is obtained according to the mask pattern, and the plating is deposited on the base layer pattern (a patterned plating film is formed).
× Table 1 shows the results of not forming a patterned plating film.
また、上記実施例1及び比較例1乃至比較例3の無電解めっき下地剤を使用して得られた各めっき基材上の金属めっき膜について、透明な基材の裏側から観察しためっき被膜形成部分の黒色化状態を、以下の基準に従って目視で評価した。結果を表2に示す。 Further, with respect to the metal plating film on each plating base material obtained by using the electroless plating base materials of Example 1 and Comparative Examples 1 to 3, the plating film formation observed from the back side of the transparent base material. The blackened state of the portion was visually evaluated according to the following criteria. The results are shown in Table 2.
<裏面黒色化評価基準>
A:十分に黒色化されている
B:褐色にみえる
C:効果がみられない<Evaluation criteria for blackening the back side>
A: Sufficiently blackened B: Looks brown C: No effect
さらに、めっき基材として、PETフィルム(東洋紡(株)製、A4100)の表面(易接着処理面)およびPETフィルム(帝人デュポンフィルム(株)製、HB3)の易接着処理面を用い、実施例1及び比較例1乃至比較例3の無電解めっき下地剤を使用して上記と同様の手法で各めっき基材上に金属めっき膜を作成した。得られた金属めっき膜部分に、幅18mmのセロテープ(登録商標)[ニチバン(株)製 CT−18S]を貼り、手の指で強く擦りつけてしっかり密着させた後、密着させたセロテープ(登録商標)を一気に剥がし、金属めっき膜の状態を以下の基準に従って目視で評価した。結果を表2に併せて示す。 Further, as the plating base material, the surface (easy-adhesion-treated surface) of the PET film (manufactured by Toyo Boseki Co., Ltd., A4100) and the easily-adhesion-treated surface of the PET film (manufactured by Teijin DuPont Film Co., Ltd., HB3) are used. A metal plating film was prepared on each plating substrate by the same method as described above using the electroless plating base material of No. 1 and Comparative Examples 1 to 3. A cellophane tape (registered trademark) [CT-18S manufactured by Nichiban Co., Ltd.] with a width of 18 mm was attached to the obtained metal-plated film portion, and the cellophane tape (registered) was adhered after being firmly rubbed with the fingers of the hand. The trademark) was peeled off at once, and the state of the metal plating film was visually evaluated according to the following criteria. The results are also shown in Table 2.
<基材密着性の評価基準>
○:金属めっき膜の剥離が確認できず基材上に密着
△:部分的に金属めっき膜が剥離
×:大部分(およそ5割以上)の金属めっき膜が剥離しセロテープ(登録商標)に付着
◯: Metal plating film peeled off and adhered to the base material △: Metal plating film partially peeled off ×: Most (about 50% or more) metal plating film peeled off and adhered to cellophane tape (registered trademark)
表1に示すように、上記感光性下地剤を用いて下地層を形成し、これをマスクを介して露光後、現像することにより得られたパターン化された無電解めっき下地層上にめっき膜を形成する場合において、親水部を持たない重合性高分子化合物を含む下地剤を用いた場合、現像されず、めっきが析出しなかった(比較例1)。また、親水部を10%有する重合性高分子化合物を含む下地剤を用いた場合、部分的に現像されるが、ほぼ全面がめっきされる結果となった(比較例2)。さらに親水部を30%有する重合性高分子化合物を含む下地剤を用いた場合であっても、該化合物が低分子量である場合は太線部分でめっきが析出し、細線パターン部でめっきは析出しなかった(比較例3)。
これに対し、高分子量でかつ親水部を30%有する重合性高分子化合物を含む本発明の感光性下地剤を用いた場合では細線部へのめっきが確認された(実施例1)。
以上の結果より、本発明の感光性下地剤は、フォトリソグラフィーによりパターン化されためっき下地層を形成可能であり、微細な金属めっき膜を得る上で有利であることが明らかとなった。
また、表2に示すように、本発明の感光性下地剤を使用して得られる金属めっき膜は基材との密着性に優れるとともに、金属めっき膜の裏面は十分な黒色を呈するため、これらをガラス基板等の透明基材上に形成した際に、画像視認性の高い透明電極としての使用が期待できる。As shown in Table 1, a plating film is formed on a patterned electroless plating base layer obtained by forming a base layer using the above photosensitive base material, exposing the base layer through a mask, and then developing the base layer. When a base material containing a polymerizable polymer compound having no hydrophilic portion was used, the plating was not developed and the plating was not precipitated (Comparative Example 1). Further, when a base material containing a polymerizable polymer compound having a hydrophilic portion of 10% was used, it was partially developed, but almost the entire surface was plated (Comparative Example 2). Further, even when a base material containing a polymerizable polymer compound having a hydrophilic portion of 30% is used, if the compound has a low molecular weight, plating is precipitated in the thick line portion and plating is precipitated in the thin line pattern portion. There was no (Comparative Example 3).
On the other hand, when the photosensitive base material of the present invention containing a polymerizable polymer compound having a high molecular weight and 30% hydrophilic portion was used, plating on the fine wire portion was confirmed (Example 1).
From the above results, it has been clarified that the photosensitive base material of the present invention can form a plating base layer patterned by photolithography and is advantageous in obtaining a fine metal plating film.
Further, as shown in Table 2, the metal plating film obtained by using the photosensitive base material of the present invention has excellent adhesion to the substrate, and the back surface of the metal plating film exhibits a sufficient black color. Can be expected to be used as a transparent electrode with high image visibility when it is formed on a transparent substrate such as a glass substrate.
Claims (16)
(a)アンモニウム基を分子末端に有し且つ重量平均分子量が1,000〜5,000,000であるハイパーブランチポリマー、
(b)金属微粒子、
(c)分子内に1個以上の末端が重合性不飽和結合である側鎖を有し、オキシアルキレン基を全繰り返し単位の100モルあたり15〜50モル有し且つ重量平均分子量が10,000〜100,000である高分子化合物、
(d)光重合開始剤、
(e)アミノ基を有する化合物、及び
(f)多官能チオール
を含む感光性下地剤。A base material for forming a metal plating film on a base material by electroless plating.
(A) A hyperbranched polymer having an ammonium group at the end of the molecule and having a weight average molecular weight of 1,000 to 5,000,000.
(B) Metal fine particles,
(C) It has one or more side chains in the molecule that are polymerizable unsaturated bonds, has 15 to 50 mol of oxyalkylene groups per 100 mol of all repeating units, and has a weight average molecular weight of 10,000. 100,000 high molecular weight compounds,
(D) Photopolymerization initiator,
A photosensitive base material containing (e) a compound having an amino group and (f) a polyfunctional thiol.
(式中、R1はそれぞれ独立して水素原子又はメチル基を表し、R2乃至R4はそれぞれ独立して水素原子、炭素原子数1乃至20の直鎖状、枝分かれ状若しくは環状のアルキル基、炭素原子数7乃至20のアリールアルキル基又は−(CH2CH2O)mR5(式中、R5は水素原子又はメチル基を表し、mは2乃至100の整数を表す。)を表す(該アルキル基及びアリールアルキル基は、アルコキシ基、ヒドロキシ基、アンモニウム基、カルボキシ基又はシアノ基で置換されていてもよい。)か、R2乃至R4のうちの2つの基が一緒になって、直鎖状、枝分かれ状又は環状のアルキレン基を表すか、又はR2乃至R4はそれらが結合する窒素原子と一緒になって環を形成してもよく、X−は陰イオンを表し、nは繰り返し単位構造の数であって、5乃至100,000の整数を表し、A1は式[2]で表される構造を表す。)
(式中、A2はエーテル結合又はエステル結合を含んでいてもよい炭素原子数1乃至30の直鎖状、枝分かれ状又は環状のアルキレン基を表し、Y1乃至Y4はそれぞれ独立して水素原子、炭素原子数1乃至20のアルキル基、炭素原子数1乃至20のアルコキシ基、ニトロ基、ヒドロキシ基、アミノ基、カルボキシ基又はシアノ基を表す。)The photosensitive base material according to any one of claims 1 to 6, wherein the hyperbranched polymer (a) is a hyperbranched polymer represented by the formula [1].
(In the formula, R 1 independently represents a hydrogen atom or a methyl group, and R 2 to R 4 independently represent a hydrogen atom and a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, respectively. , An arylalkyl group having 7 to 20 carbon atoms or-(CH 2 CH 2 O) m R 5 (in the formula, R 5 represents a hydrogen atom or a methyl group, and m represents an integer of 2 to 100). Represent (the alkyl group and arylalkyl group may be substituted with an alkoxy group, a hydroxy group, an ammonium group, a carboxy group or a cyano group), or two groups of R 2 to R 4 are combined together. Representing a linear, branched or cyclic alkylene group, or R 2 to R 4 may be combined with the nitrogen atom to which they are attached to form a ring, where X − represents an anion. Represented, n is the number of repeating unit structures, represents an integer of 5 to 100,000, and A 1 represents the structure represented by the equation [2].)
(In the formula, A 2 represents a linear, branched or cyclic alkylene group having 1 to 30 carbon atoms which may contain an ether bond or an ester bond, and Y 1 to Y 4 are independently hydrogen. Represents an atom, an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, a nitro group, a hydroxy group, an amino group, a carboxy group or a cyano group).
(式中、R1乃至R4及びnは前記と同じ意味を表す。)The photosensitive base material according to claim 7, wherein the hyperbranched polymer (a) is a hyperbranched polymer represented by the formula [3].
(In the formula, R 1 to R 4 and n are as defined above.)
A工程:請求項1乃至請求項12のうち何れか一項に記載の感光性下地剤を基材上に塗布し、下地層を具備する工程
B工程:フォトリソグラフィーにより所望のパターンの下地層を形成する工程
C工程:パターニングされた下地層を具備した基材を無電解めっき浴に浸漬し、金属めっき膜を形成する工程。A method for producing a metal film base material, which comprises the following steps A to C.
Step A: The photosensitive base material according to any one of claims 1 to 12 is applied onto a base material to provide a base layer. Step B: A base layer having a desired pattern is formed by photolithography. Step C: A step of immersing a base material having a patterned base layer in an electrolytic plating bath to form a metal plating film.
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