JP6842029B2 - Abrasive pad - Google Patents

Abrasive pad Download PDF

Info

Publication number
JP6842029B2
JP6842029B2 JP2016067386A JP2016067386A JP6842029B2 JP 6842029 B2 JP6842029 B2 JP 6842029B2 JP 2016067386 A JP2016067386 A JP 2016067386A JP 2016067386 A JP2016067386 A JP 2016067386A JP 6842029 B2 JP6842029 B2 JP 6842029B2
Authority
JP
Japan
Prior art keywords
polishing
polished
weft
polishing pad
warp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016067386A
Other languages
Japanese (ja)
Other versions
JP2017177274A (en
Inventor
直哉 田實
直哉 田實
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujibo Holdins Inc
Original Assignee
Fujibo Holdins Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujibo Holdins Inc filed Critical Fujibo Holdins Inc
Priority to JP2016067386A priority Critical patent/JP6842029B2/en
Publication of JP2017177274A publication Critical patent/JP2017177274A/en
Application granted granted Critical
Publication of JP6842029B2 publication Critical patent/JP6842029B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

本発明は研磨パッドに関し、織物構造からなる研磨層を有した研磨パッドに関する。 The present invention relates to a polishing pad, and relates to a polishing pad having a polishing layer made of a woven fabric structure.

従来、ガラス、金属、プラスチック、半導体基板、SiCやサファイヤ、化合物半導体等の被研磨物の表面を研磨するため、樹脂製の研磨層を有する研磨パッドの他、複数の繊維からなる布状の研磨層を有する研磨パッドが用いられている。
上記研磨パッドとして、特に一本の繊維または束ねた複数本の繊維からなる経糸および緯糸を規則的に織った織物構造からなる研磨層を有した研磨パッドが知られている(例えば特許文献1)。
Conventionally, in order to polish the surface of an object to be polished such as glass, metal, plastic, semiconductor substrate, SiC, sapphire, compound semiconductor, etc., in addition to a polishing pad having a resin polishing layer, cloth-like polishing composed of a plurality of fibers A polishing pad with a layer is used.
As the polishing pad, a polishing pad having a polishing layer having a woven structure in which warp threads and weft threads composed of one fiber or a plurality of bundled fibers are regularly woven is known (for example, Patent Document 1). ..

特開2002−86348号公報Japanese Unexamined Patent Publication No. 2002-86348

ここで、上記被研磨物を研磨した際に発生するスクラッチ傷について、近年はこれをより低減しようとする要請がある。
スクラッチ傷を低減するためには、被研磨物の研磨の際に用いるスラリーを研磨パッドの研磨面によって適度に保持することができれば、研磨性能を損なわずにスクラッチ傷の低減を図ることが考えられる。
そこで本発明は、被研磨物との間でスラリーを適度に保持してスクラッチ傷を抑制することが可能な研磨パッドを提供するものである。
Here, in recent years, there has been a demand for further reduction of scratch scratches generated when the object to be polished is polished.
In order to reduce scratches, if the slurry used for polishing the object to be polished can be appropriately held by the polishing surface of the polishing pad, it is conceivable to reduce scratches without impairing the polishing performance. ..
Therefore, the present invention provides a polishing pad capable of appropriately holding a slurry with an object to be polished and suppressing scratches.

すなわち請求項1の発明にかかる研磨パッドは、織物構造からなる研磨層を有した研磨パッドにおいて、
上記織物構造が5枚朱子または8枚朱子からなる朱子織であって、
経糸および緯糸は公定水分率が4〜10%であって、酢化度が45%以上60%未満であるアセテートのみからなる繊維によって構成され、かつ経糸と緯糸との繊度を異ならせたことを特徴とする。
That is, the polishing pad according to the invention of claim 1 is a polishing pad having a polishing layer made of a woven fabric structure.
The woven structure is a satin weave consisting of 5 satin or 8 satin.
The warp and weft are composed of only acetate fibers having an official moisture content of 4 to 10% and a vinegarization degree of 45% or more and less than 60% , and the warp and weft have different fineness. It is a feature.

上記構成によれば、公定水分率が4〜10%の繊維によって経糸および緯糸を規則的に織った織物構造とすることで、研磨面に良好な保水性を得ることができ、研磨面と被研磨物との間で適度にスラリーを保持することが可能となることから、スクラッチ傷の発生を抑えることが可能となる。 According to the above configuration, by forming a woven structure in which warp and weft are regularly woven with fibers having an official moisture content of 4 to 10%, good water retention can be obtained on the polished surface, and the polished surface and the cover can be obtained. Since it is possible to appropriately hold the slurry between the polished material and the polished material, it is possible to suppress the occurrence of scratches.

本実施例にかかる研磨パッドを備えた研磨装置の側面図。FIG. 5 is a side view of a polishing apparatus provided with a polishing pad according to this embodiment. 研磨パッドの研磨面の一部を示す拡大平面図。An enlarged plan view showing a part of the polished surface of the polishing pad. 他の実施例にかかる研磨パッドの研磨面の拡大平面図。An enlarged plan view of the polished surface of the polishing pad according to another embodiment.

以下図示実施例について説明すると、図1は被研磨物1を研磨する研磨装置2の概略図を示し、当該研磨装置2は上方に位置して被研磨物1を保持する保持定盤3と、下方に位置して研磨パッド8を固定する研磨定盤5と、上記被研磨物1と研磨パッド8との間にスラリーを供給するスラリー供給手段6とを備えている。
上記被研磨物1としては、シリコンウエハや光学用レンズ、SiCやサファイヤ、化合物半導体を対象とすることができ、その他金属、プラスチック、セラミック、ガラスによって構成された被研磨物1であってもよい。
Hereinafter, the illustrated embodiment will be described. FIG. 1 shows a schematic view of a polishing device 2 for polishing the object to be polished 1. The polishing device 2 is located above and holds a holding surface plate 3 for holding the object to be polished 1. A polishing surface plate 5 for fixing the polishing pad 8 located below and a slurry supply means 6 for supplying a slurry between the object to be polished 1 and the polishing pad 8 are provided.
The object to be polished 1 may be a silicon wafer, an optical lens, SiC, a sapphire, or a compound semiconductor, and may be an object 1 to be polished made of other metals, plastics, ceramics, or glass. ..

上記保持定盤3および研磨定盤5はそれぞれ略円盤状を有しており、それぞれ図示しない駆動手段によって回転するようになっており、また上記保持定盤3は昇降可能に設けられている。
上記保持定盤3の下面には上記被研磨物1が保持具やワックス(図示せず)により保持され、上記研磨定盤5の上面には両面テープ(図示せず)を介して上記研磨パッド8が接着固定されている。
上記研磨パッド8は、以下に説明する布状の研磨層4と、当該研磨層4に図示しない両面テープを介して接着されたクッション層7とから構成されており、上記クッション層7が両面テープによって研磨定盤に接着固定されるようになっている。
そして研磨加工を行う際、上記保持定盤3は上記研磨定盤5上面の研磨パッド8に上記被研磨物1を押し当てながら相対的に回転し、上記スラリー供給手段6がスラリーを上記被研磨物1と研磨パッド8との間に供給される。
上記スラリー供給手段6が供給する上記スラリーとしては、研磨する被研磨物1および求められる加工精度に応じて従来公知の物を使用することができ、例えばダイヤモンド砥粒を含んだものを使用することができる。
The holding surface plate 3 and the polishing surface plate 5 each have a substantially disk shape, and each of them is rotated by a driving means (not shown), and the holding surface plate 3 is provided so as to be able to move up and down.
The object to be polished 1 is held on the lower surface of the holding surface plate 3 by a holder or wax (not shown), and the polishing pad is placed on the upper surface of the polishing surface plate 5 via double-sided tape (not shown). 8 is adhesively fixed.
The polishing pad 8 is composed of a cloth-shaped polishing layer 4 described below and a cushion layer 7 bonded to the polishing layer 4 via a double-sided tape (not shown), and the cushion layer 7 is a double-sided tape. It is fixed to the polishing surface plate by adhesive.
Then, when performing the polishing process, the holding surface plate 3 rotates relatively while pressing the object 1 to be polished against the polishing pad 8 on the upper surface of the polishing surface plate 5, and the slurry supply means 6 polishes the slurry. It is supplied between the object 1 and the polishing pad 8.
As the slurry supplied by the slurry supply means 6, conventionally known ones can be used depending on the object to be polished 1 and the required processing accuracy, and for example, one containing diamond abrasive grains is used. Can be done.

本実施例の研磨層4は布状を有しており、上記研磨定盤5と略同径の円形を有している。また研磨層4は図2や図3に示すような黒色で示す経糸Lvおよび白色で示す緯糸Lhを規則的に織った織物構造を有している。
上記経糸Lvおよび緯糸Lhは公定水分率が4〜10%の繊維によって構成される。公定水分率が4%以上とすることで、その保水性から研磨面上のスラリーによって適度に膨潤し、スラリーを均一に分散させやすくなる。また公定水分率が10%以下とすることで、過度の膨潤を抑えることができる。
このような公定水分率を有する繊維素材としては、セルロース系繊維のうち、適度に水酸基をアシル化等によって疎水化処理したもの(例えば、アセテート)、強撚によって公定水分率を抑えたもの(例えば、レーヨン、ポリノジック、キュプラ)を挙げることができる。
なお、公定水分率の高い素材と低い素材を混繊して水分率を上記範囲とすることもできるが、膨潤斑を生じやすくなるので好ましくない。また、公定水分率としてはナイロンも範囲内といえるが、融点や軟化点が低い熱可塑性のものは、研磨時の摩擦熱に弱いため、耐熱性の高いセルロース系素材が好ましく用いられる。中でも、アセテートからなる繊維は、強撚にしなくても、過度の膨潤を抑えることができ、研磨物の面品位に優れるため好ましい。
The polishing layer 4 of this embodiment has a cloth shape and has a circular shape having substantially the same diameter as the polishing surface plate 5. Further, the polishing layer 4 has a woven structure in which the warp Lv shown in black and the weft Lh shown in white are regularly woven as shown in FIGS. 2 and 3.
The warp Lv and weft Lh are composed of fibers having an official moisture content of 4 to 10%. When the official moisture content is 4% or more, the slurry on the polished surface appropriately swells due to its water retention, and the slurry can be easily dispersed uniformly. Further, by setting the official water content to 10% or less, excessive swelling can be suppressed.
As the fiber material having such an official moisture content, among the cellulosic fibers, those in which the hydroxyl groups are appropriately hydrophobized by acylation or the like (for example, acetate) and those in which the official moisture content is suppressed by strong twisting (for example). , Rayon, Polynosic, Cupra).
It is also possible to mix a material having a high official moisture content and a material having a low official moisture content to set the moisture content within the above range, but this is not preferable because swelling spots are likely to occur. Nylon can be said to be within the range of the official moisture content, but thermoplastic materials having a low melting point and softening point are vulnerable to frictional heat during polishing, so a cellulosic material having high heat resistance is preferably used. Above all, the fiber made of acetate is preferable because it can suppress excessive swelling without being strongly twisted and has excellent surface quality of the polished material.

以下本実施例に使用するアセテート繊維の製造方法の一例を説明する。
最初に、高純度の木材パルプを無水酢酸と反応させ、これによりほぼすべての水酸基がアセチル化されたアセテートフレークを得る。
続いて、得られたアセテートのアセチル基を酸により部分的に加水分解させることにより、所要の酢化度を有したアセテートフレークを得、これを溶剤に溶解させて紡糸原液を作製する。
次いで当該紡糸原液を微小な吐出孔より高温雰囲気中に吐出させるなどにより、溶剤成分を除去させる。これにより上記アセテート成分が凝固するため、これを巻き取ることにより、上記アセテート繊維を得ることができる。
その際、上記吐出孔に対してモノフィラメントのまま巻き取っても良いし、複数の吐出孔から吐出されるフィラメントを必要に応じて仮撚りしながら束ねるマルチフィラメントとして巻き取っても良い。
巻き取ったアセテート繊維は、更にクリンプ加工を施しても良いし、38mm〜51mm程度に切断し、紡績糸にして用いることも可能だが、紡績糸の場合は、研磨時の摩擦によって脱落しやすいため、繊維長の長いモノフィラメントまたはマルチフィラメントの状態で用いる方が好ましい。
本実施例では、特に酢化度(ASTM:D−817−91「セルロースアセテート等の試験方法」により測定された値)が45%以上60%未満のアセテート繊維を用いることが望ましい。
このようなアセテート繊維は保水性が良好であり、当該繊維を使用した研磨パッド8を用いることで、上記スラリーを被研磨物1との間で良好に保持することが可能となり、スクラッチ傷の低減を図ることができる。
これに対し、酢化度が45%よりも低いアセテート繊維を用いた場合、保水性が過大となって繊維が膨潤し、研磨面の平坦性が損なわれるため、研磨性能が低下してしまう。
一方、酢化度が60%を超えたアセテート繊維を用いた場合、保水性が低くなって被研磨物1との間に十分なスラリーを保持することができなくなるため、スクラッチ傷を発生させる原因となる。
Hereinafter, an example of the method for producing the acetate fiber used in this example will be described.
First, high-purity wood pulp is reacted with acetic anhydride, which gives acetate flakes with almost all hydroxyl groups acetylated.
Subsequently, the acetyl group of the obtained acetate is partially hydrolyzed with an acid to obtain acetate flakes having a required degree of vinegarization, which is dissolved in a solvent to prepare a spinning stock solution.
Next, the solvent component is removed by discharging the spinning stock solution from a minute discharge hole into a high temperature atmosphere. As a result, the acetate component solidifies, and by winding this, the acetate fiber can be obtained.
At that time, the monofilament may be wound around the discharge holes as it is, or the filaments discharged from the plurality of discharge holes may be wound as a multifilament which is bundled while falsely twisting as necessary.
The wound acetate fiber may be further crimped or cut to about 38 mm to 51 mm and used as a spun yarn, but in the case of a spun yarn, it easily falls off due to friction during polishing. , It is preferable to use it in the state of monofilament or multifilament having a long fiber length.
In this example, it is particularly desirable to use acetate fibers having a vinegarization degree (a value measured by ASTM: D-817-91 "Test method for cellulose acetate or the like") of 45% or more and less than 60%.
Such acetate fibers have good water retention, and by using the polishing pad 8 using the fibers, the slurry can be well held between the abrasive fibers and the object to be polished 1, and scratch scratches can be reduced. Can be planned.
On the other hand, when an acetate fiber having a vinegarization degree of less than 45% is used, the water retention becomes excessive, the fiber swells, and the flatness of the polished surface is impaired, so that the polishing performance deteriorates.
On the other hand, when an acetate fiber having a vinegarization degree of more than 60% is used, the water retention property becomes low and a sufficient slurry cannot be held between the vinegared object 1 and the object to be polished, which causes scratches. It becomes.

なお、上記ジアセテート繊維は、当該ジアセテート繊維をそのままモノフィラメント糸として用いるか、もしくは当該繊維を束ねたマルチフィラメント糸として経糸Lvおよび緯糸Lhに用いてこれを規則的に織ることで、織物構造を有した研磨層4を得ることができる。
本実施例では複数本のジアセテート繊維を束ねた75〜160デシテックスのマルチフィラメント糸を使用している。繊度を75デシテックス以上とすることで、スラリーとしてダイヤモンド砥粒を用いた場合であっても耐摩耗性を確保することができ、反対に繊度を160デシテックス以下とすることで、糸の剛性が高くなりすぎず、これを研磨層4にした場合にスクラッチ傷が発生しにくくなる。
なお、経糸Lvおよび緯糸Lhには同じ繊度の糸を用いることも可能であるが、繊度を異ならせるようにしてもよい。
In the diacetate fiber, the diacetate fiber is used as it is as a monofilament yarn, or the fiber is used as a bundled multifilament yarn for the warp yarn Lv and the weft yarn Lh and weaved regularly to form a woven structure. The polished layer 4 can be obtained.
In this embodiment, a 75 to 160 decitex multifilament yarn in which a plurality of diacetate fibers are bundled is used. By setting the fineness to 75 decitex or more, wear resistance can be ensured even when diamond abrasive grains are used as the slurry, and conversely, by setting the fineness to 160 decitex or less, the rigidity of the yarn is high. It does not become too much, and when this is made into the polishing layer 4, scratch scratches are less likely to occur.
It is possible to use yarns having the same fineness for the warp Lv and the weft Lh, but the fineness may be different.

図2は上記研磨層4における研磨面側からみた織物構造を説明するものであり、本実施例では織物構造として朱子織を採用し、図2では研磨面に現れる経糸Lvを黒色で、緯糸Lhを白色でそれぞれ示している。
このように、経糸Lvと緯糸Lhとを規則的に織って研磨層4を得ることで、研磨層4を不織布によって構成した場合に比べて、その表面をより平滑にすることができ、より高いスクラッチ傷の低減効果を図ることができる。
FIG. 2 illustrates the woven fabric structure seen from the polished surface side of the polishing layer 4, and in this embodiment, satin weave is adopted as the woven fabric structure, and in FIG. 2, the warp Lv appearing on the polished surface is black and the weft Lh. Are shown in white.
By regularly weaving the warp Lv and the weft Lh in this way to obtain the polishing layer 4, the surface of the polishing layer 4 can be made smoother and higher than when the polishing layer 4 is made of a non-woven fabric. The effect of reducing scratch scratches can be achieved.

図2に示す朱子織からなる織物構造について説明すると、朱子織では同本数の経糸Lvおよび緯糸Lhを用いて一定のパターンを形成するようになっており、縦方向において、研磨面に現れる経糸Lvは4本の緯糸Lh糸を飛び越えるように位置し、また研磨面に現れた緯糸Lhが斜め方向に連続しないようになっている。
また図2に示す朱子織はいわゆる5枚朱子と呼ばれる織物構造であって、8枚朱子と呼ばれる、縦方向において、研磨面に現れる経糸Lvは7本の緯糸Lh糸を飛び越えるように位置した朱子織も知られ、このような織物構造も採用することができる。
このような朱子織を織物構造に採用した場合、図2においては緯糸Lhが研磨面に均一に分散するようになり、研磨面のうねりが低減される。
Explaining the woven structure made of satin weave shown in FIG. 2, the satin weave uses the same number of warp threads Lv and weft threads Lh to form a certain pattern, and the warp threads Lv appearing on the polished surface in the vertical direction. Is positioned so as to jump over the four weft Lh threads, and the weft threads Lh appearing on the polished surface are not continuous in the diagonal direction.
Further, the satin weave shown in FIG. 2 has a so-called five-sheet satin structure, and the warp Lv appearing on the polished surface in the vertical direction, which is called eight-sheet satin, is located so as to jump over the seven weft Lh threads. Weaving is also known, and such a woven structure can also be adopted.
When such a satin weave is adopted for the woven fabric structure, the weft Lh is uniformly dispersed on the polished surface in FIG. 2, and the waviness of the polished surface is reduced.

さらに、研磨層4を構成する織物構造としては、図3(a)に示すような綾織りや、図3(b)に示すような平織りも採用可能である。
上記綾織りでは、研磨面に現れる緯糸Lhが斜め方向に連続するようになっており、経糸Lvと緯糸Lhの繊度が同じ場合には上記緯糸Lhの現れる傾きが経糸の長手方向に対して45°となる。
また上記平織りでは、経糸Lvと緯糸Lhとを一本ごとに交差させて、研磨面に経糸Lvと緯糸Lhとが市松模様のように現れるようになっている。
ただし、綾織りでは研磨面の斜め方向に規則的な段差が生じやすく、また平織りでは研磨面に凹凸が数多く存在しやすいため、研磨パッドの性能としては上記朱子織を採用したものの方が好ましいこととなる。
なお、上記朱子織、綾織り、平織りといった織物構造の他にも、従来公知の方法で経糸Lvと緯糸Lhを規則的に織った織物構造も採用することができる。
Further, as the woven fabric structure constituting the polishing layer 4, a twill weave as shown in FIG. 3A and a plain weave as shown in FIG. 3B can be adopted.
In the above twill weave, the weft Lh appearing on the polished surface is continuous in the diagonal direction, and when the warp Lv and the weft Lh have the same fineness, the inclination at which the weft Lh appears is 45 with respect to the longitudinal direction of the warp. It becomes °.
Further, in the above plain weave, the warp Lv and the weft Lh are crossed one by one so that the warp Lv and the weft Lh appear like a checkerboard pattern on the polished surface.
However, in twill weave, regular steps are likely to occur in the diagonal direction of the polished surface, and in plain weave, many irregularities are likely to exist on the polished surface. Therefore, it is preferable to use the satin weave as the performance of the polishing pad. It becomes.
In addition to the woven fabric structures such as satin weave, twill weave, and plain weave, a woven fabric structure in which the warp Lv and the weft Lh are regularly woven by a conventionally known method can also be adopted.

なお、上記経糸Lvまたは緯糸Lhのうち、いずれか一方の研磨面に露出する面積が、研磨面の面積に対して50〜80%の範囲とすることで、経糸Lvと緯糸Lhとが交差する際の糸の変形により発生する研磨面のうねりが抑制され、研磨面の平坦性が確保されて上記効果を得やすくなると推察される。
上記面積の割合については、経糸Lvと緯糸Lhとの繊度を異ならせることによって調整することが可能である。
The warp Lv and the weft Lh intersect with each other by setting the area exposed on the polished surface of either of the warp Lv or the weft Lh to be in the range of 50 to 80% with respect to the area of the polished surface. It is presumed that the waviness of the polished surface generated by the deformation of the yarn is suppressed, the flatness of the polished surface is ensured, and the above effect can be easily obtained.
The ratio of the area can be adjusted by making the fineness of the warp Lv and the weft Lh different.

以下、本発明の実施例および比較例を用いて以下の実験を行った。なお本発明は以下の実施例によって何ら限定されるものではない。
まず、実施例および比較例にかかる研磨パッド8について、それぞれ厚さ、密度、圧縮率、圧縮弾性率、A硬度、公定水分率、経糸または緯糸の研磨面での面積率を、それぞれ以下の方法を用いて測定した。
<厚さ>
日本工業規格(JIS K6550)に記載された厚さ測定方法に準じて、研磨パッドの厚さを測定した。
すなわち、研磨パッドに厚さ方向に初荷重として1cmあたり100gの荷重を付与した際の研磨パッドの厚さを測定した。具体的には、研磨パッドを縦10cm×横10cmの3ピースに切り分け、各ピースの四隅および中心部の厚さをダイヤルゲージ(最小目盛り0.01mm)を使用して最小目盛りまで読み取り計測し、5点の平均値を1ピースの厚さとした。そして研磨パッドの平均厚さは、3ピースについてそれぞれ測定した厚みの平均値とした。
<密度>
密度(g/cm)は所定サイズの大きさに切り出した研磨パッドの重量(g)を測定して、サイズから体積(cm)を求めることにより算出した。
<圧縮率および圧縮弾性率>
圧縮率及び圧縮弾性率は、日本工業規格(JIS L1021)に従い、ショッパー型厚さ測定器(加圧面:直径1cmの円形)を使用して求めた。具体的には、無荷重状態から初荷重を30秒間かけた後の厚さt0を測定し、次に、厚さt0の状態から最終圧力を5分間かけた後の厚さt1を測定した。
さらに、厚さt1の状態から全ての荷重を除き、5分間放置(無荷重状態とした)後、再び初荷重を30秒間かけた後の厚さt0’を測定した。これらから、圧縮率及び圧縮弾性率を下記式を用いて算出する。
圧縮率(%)=(t0−t1)/t0×100
圧縮弾性率(%)=(t0’−t1)/(t0−t1)
このとき、初荷重は100g/cm、最終圧力は1120g/cmとした。
<ショアA硬度>
ショアA硬度の測定は、研磨パッドから試料片(10cm×10cm)を切り出し、複数枚の試料片を厚さが4.5mm以上となるように重ね、A型硬度計(日本工業規格、JIS K7311)にて測定した。例えば、1枚の試料片の厚さが1.1mmの場合は、5枚を重ねて測定した。なお、試料片を固定するために、それぞれの試料片の両面テープの離形紙を剥離させ、試料片を一体化させた状態での測定を行った。
<公定水分率>
研磨層4に使用するアセテート繊維を50℃窒素雰囲気下で24時間乾燥した乾燥質量と、65%相対湿度、20℃の雰囲気で24時間後の吸湿重量を測定した。これらの測定値から、公定水分率は下記式を用いて算出する。
公定水分率(%)=(吸湿重量―乾燥重量)/乾燥重量×100
<研磨面に現れる経糸または緯糸の面積率>
マイクロスコープ(VH−5500、KEYENCE社製)でパッド表面の約1.3mm四方の範囲を100倍に拡大して観察し、得られた画像を画像処理ソフト(WinRooF、三谷商事株式会社製)により二値化処理することで、表面に多く露出している糸とそれ以外の部分とを区別した。そして、区別した表面に露出した糸とそれ以外の部分の各々の面積比率から、表面に多く露出した糸の面積率を算出した。
Hereinafter, the following experiments were carried out using the examples and comparative examples of the present invention. The present invention is not limited to the following examples.
First, for the polishing pads 8 according to the examples and the comparative examples, the thickness, density, compressibility, compressibility, A hardness, official moisture content, and area ratio of the warp or weft on the polished surface are determined by the following methods, respectively. Was measured using.
<Thickness>
The thickness of the polishing pad was measured according to the thickness measuring method described in Japanese Industrial Standards (JIS K6550).
That is, the thickness of the polishing pad when a load of 100 g per 1 cm 2 was applied to the polishing pad as an initial load in the thickness direction was measured. Specifically, the polishing pad is cut into 3 pieces of 10 cm in length and 10 cm in width, and the thickness of the four corners and the center of each piece is read and measured to the minimum scale using a dial gauge (minimum scale 0.01 mm). The average value of 5 points was taken as the thickness of 1 piece. The average thickness of the polishing pad was the average value of the thickness measured for each of the three pieces.
<Density>
The density (g / cm 3 ) was calculated by measuring the weight (g) of the polishing pad cut out to the size of a predetermined size and obtaining the volume (cm 3 ) from the size.
<Compression modulus and compressive elastic modulus>
The compressibility and compressive elastic modulus were determined using a shopper type thickness measuring instrument (pressurized surface: circular with a diameter of 1 cm) in accordance with Japanese Industrial Standards (JIS L1021). Specifically, the thickness t0 after applying the initial load for 30 seconds from the unloaded state was measured, and then the thickness t1 after applying the final pressure for 5 minutes from the state of the thickness t0 was measured.
Further, all the loads were removed from the state of the thickness t1 and left for 5 minutes (in the no-load state), and then the initial load was applied again for 30 seconds, and then the thickness t0'was measured. From these, the compressibility and compressive elastic modulus are calculated using the following formulas.
Compression rate (%) = (t0-t1) / t0 × 100
Compressive modulus (%) = (t0'-t1) / (t0-t1)
At this time, the initial load was 100 g / cm 2 and the final pressure was 1120 g / cm 2 .
<Shore A hardness>
To measure the shore A hardness, a sample piece (10 cm x 10 cm) is cut out from the polishing pad, and multiple sample pieces are stacked so that the thickness is 4.5 mm or more, and an A type hardness tester (Japanese Industrial Standards, JIS K7311) is used. ). For example, when the thickness of one sample piece was 1.1 mm, five pieces were stacked and measured. In order to fix the sample pieces, the release paper of the double-sided tape of each sample piece was peeled off, and the measurement was performed in a state where the sample pieces were integrated.
<Official moisture content>
The dry mass of the acetate fiber used for the polishing layer 4 dried in a nitrogen atmosphere at 50 ° C. for 24 hours, and the moisture absorption weight after 24 hours in an atmosphere of 65% relative humidity and 20 ° C. were measured. From these measured values, the official moisture content is calculated using the following formula.
Official moisture content (%) = (moisture absorption weight-dry weight) / dry weight x 100
<Area ratio of warp or weft appearing on the polished surface>
With a microscope (VH-5500, manufactured by KEYENCE), the area of about 1.3 mm square on the pad surface was magnified 100 times and observed, and the obtained image was observed by image processing software (WinRooF, manufactured by Mitani Shoji Co., Ltd.). By the binarization treatment, the threads exposed on the surface and the other parts were distinguished. Then, the area ratio of the yarn exposed to a large amount on the surface was calculated from the area ratio of each of the yarn exposed on the distinguished surface and the other portion.

そして、実施例および比較例にかかる研磨パッド8のそれぞれについて、以下の条件で研磨加工を行い、スクラッチの評価を行った。ここで被研磨物としては、SiCを用い、またスラリーとしてはダイヤモンド砥粒(砥粒径:3μm)分散液を用いた。
スクラッチの評価には、下記研磨装置を用いて25枚の被研磨物を研磨し、各被研磨物のスクラッチを目視にて確認した。スクラッチの評価は、スクラッチが全く確認できなかった場合を○、1枚以上確認されたものの製品の品質として許容できる程度であった場合が△、1枚以上確認され、かつ、製品として使用出来ないものを含んでいた場合を×をして評価した。
使用研磨装置:片面研磨装置
研磨速度(定盤回転数):80rpm
加工応力:330gf/cm
スラリー供給量:3mL/分
研磨時間:60分
Then, each of the polishing pads 8 according to the examples and the comparative examples was polished under the following conditions to evaluate scratches. Here, SiC was used as the object to be polished, and a diamond abrasive grain (abrasive particle size: 3 μm) dispersion was used as the slurry.
In the evaluation of scratches, 25 pieces of objects to be polished were polished using the following polishing device, and scratches on each object to be polished were visually confirmed. In the evaluation of scratches, if scratches could not be confirmed at all, ○, if one or more sheets were confirmed, but the quality of the product was acceptable, △, one or more sheets were confirmed, and the product could not be used. The case where the product was included was evaluated as x.
Polishing device used: Single-sided polishing device Polishing speed (surface plate rotation speed): 80 rpm
Machining stress: 330 gf / cm 2
Slurry supply: 3 mL / min Polishing time: 60 minutes

Figure 0006842029
Figure 0006842029

(実施例1)
実施例1にかかる研磨パッド8には、以下のアセテート繊維からなる経糸および緯糸を朱子織にした研磨層4からなるものを用いた。具体的に経糸には酢化度55%のアセテートマルチフィラメントからなる83デシテックスの糸を用い、緯糸には酢化度55%のアセテートマルチフィラメントからなる133デシテックスの糸を用いた。
さらに、クッション層7としては、ショアA硬度32、厚さ0.7mmのポリウレタン樹脂含浸不織布を用いた。
さらに上記研磨層4とクッション層7とを厚さ130μm(中間接着用で基材はポリプロピレンフィルム)の両面テープで接着し、クッション層7と研磨層4と反対側の面には厚さ130μm(定盤接着用で基材はPET)の両面テープで接着することで、上記研磨パッド8を得た。
そして上記表1に示すように、実験結果としては全ての被研磨物にスクラッチ傷が認められず、良好な結果を得ることができた。これは、実施例にかかる研磨パッド8の研磨層4は公定水分率が適度で保水性が良好であることから、研磨面との間でスラリーを良好に保持できたことに起因するものと推察される。
(Example 1)
As the polishing pad 8 according to the first embodiment, a polishing pad 8 made of the following acetate fibers as warp threads and weave threads in a satin weave was used. Specifically, an 83 decitex yarn made of an acetate multifilament having a vinegarization degree of 55% was used as the warp yarn, and a 133 decitex yarn made of an acetate multifilament having a vinegarization degree of 55% was used as the weft yarn.
Further, as the cushion layer 7, a polyurethane resin-impregnated non-woven fabric having a Shore A hardness of 32 and a thickness of 0.7 mm was used.
Further, the polishing layer 4 and the cushion layer 7 are bonded with a double-sided tape having a thickness of 130 μm (for intermediate bonding and the base material is a polypropylene film), and the surface opposite to the cushion layer 7 and the polishing layer 4 has a thickness of 130 μm (). The polishing pad 8 was obtained by adhering the base material with a double-sided tape of PET) for adhering to a platen.
As shown in Table 1 above, as an experimental result, no scratch scratches were observed on all the objects to be polished, and good results could be obtained. It is presumed that this is because the polishing layer 4 of the polishing pad 8 according to the embodiment has an appropriate official moisture content and good water retention, so that the slurry can be well held between the polishing surface and the polishing surface. Will be done.

(実施例2)
次に、実施例2として使用した研磨パッド8は、上記研磨層4の織物構造として図3(a)に示す綾織りを採用した以外は実施例と同様の構成を有している。
実験結果としては、一部の被研磨物にスクラッチ傷が認められたが、製品の品質としては許容できる程度であった。
これは、実施例2にかかる研磨パッド8では、図3(a)に示すように研磨面に斜め方向に緯糸Lhが連続して現れる綾織りを編物構造として採用したことにより、研磨面に斜め方向の段差が発生し、斜め方向の段差による表面の平坦性への影響がスクラッチ傷の原因になったものと推察される。
(Example 2)
Next, the polishing pad 8 used in Example 2 has the same configuration as in Example except that the twill weave shown in FIG. 3A is adopted as the woven structure of the polishing layer 4.
As a result of the experiment, scratches were observed on some of the objects to be polished, but the quality of the product was acceptable.
This is because in the polishing pad 8 according to the second embodiment, as shown in FIG. 3A, a twill weave in which weft threads Lh continuously appear in the polishing surface in the diagonal direction is adopted as the knitting structure, so that the polishing surface is oblique. It is presumed that a step in the direction was generated, and the influence of the step in the diagonal direction on the flatness of the surface was the cause of scratches.

(比較例1)
比較例1として使用した研磨パッド8は、上記研磨層4として経糸に酢化度61%のアセテートマルチフィラメントからなる83デシテックスの糸を使用し、緯糸に酢化度61%のアセテートマルチフィラメントからなる167デシテックスの糸を使用した以外は実施例1と同様の構成を有している。
実験結果としては、複数の被研磨物にスクラッチ傷が認められた。これは、比較例1にかかる研磨パッドの公定水分率が低いため保水性が低くなり、被研磨物1との間に十分なスラリーを保持することができなくなるため、スクラッチ傷を生じさせたものと推察される。
(Comparative Example 1)
The polishing pad 8 used as Comparative Example 1 uses 83 decitex yarns made of acetate multifilament having a vinegarization degree of 61% as the warp yarns as the polishing layer 4, and acetate multifilaments having a vinegarization degree of 61% as the weft yarns. It has the same configuration as that of Example 1 except that 167 decitex yarn is used.
As a result of the experiment, scratches were observed on a plurality of objects to be polished. This is because the official moisture content of the polishing pad according to Comparative Example 1 is low, so that the water retention is low, and it becomes impossible to hold a sufficient slurry between the polishing pad and the object to be polished 1, resulting in scratches. It is inferred that.

1 被研磨物 2 研磨装置
4 研磨パッド Lv 経糸
Lh 緯糸
1 Object to be polished 2 Polishing device 4 Polishing pad Lv Warp Lh Weft

Claims (4)

織物構造からなる研磨層を有した研磨パッドにおいて、
上記織物構造が5枚朱子または8枚朱子からなる朱子織であって、
経糸および緯糸は公定水分率が4〜10%であって、酢化度が45%以上60%未満であるアセテートのみからなる繊維によって構成され、かつ経糸と緯糸との繊度を異ならせたことを特徴とする研磨パッド。
In a polishing pad having a polishing layer made of a woven structure,
The woven structure is a satin weave consisting of 5 satin or 8 satin.
The warp and weft are composed of only acetate fibers having an official moisture content of 4 to 10% and a vinegarization degree of 45% or more and less than 60% , and the warp and weft have different fineness. Characterized polishing pad.
上記経糸または緯糸のうちいずれか一方の研磨面に露出する面積が、研磨面の面積に対して50〜80%であることを特徴とする請求項1に記載の研磨パッド。 The polishing pad according to claim 1 , wherein the area exposed on the polishing surface of either the warp or the weft is 50 to 80% of the area of the polishing surface. 上記経糸および緯糸がモノフィラメントまたはマルチフィラメントであることを特徴とする請求項1または請求項2のいずれかに記載の研磨パッド。 The polishing pad according to claim 1 or 2 , wherein the warp and weft are monofilament or multifilament. 上記経糸および緯糸の繊度が75〜160デシテックスであることを特徴とする請求項1ないし請求項3のいずれかに記載の研磨パッド。 The polishing pad according to any one of claims 1 to 3 , wherein the warp and weft have a fineness of 75 to 160 decitex.
JP2016067386A 2016-03-30 2016-03-30 Abrasive pad Active JP6842029B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016067386A JP6842029B2 (en) 2016-03-30 2016-03-30 Abrasive pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016067386A JP6842029B2 (en) 2016-03-30 2016-03-30 Abrasive pad

Publications (2)

Publication Number Publication Date
JP2017177274A JP2017177274A (en) 2017-10-05
JP6842029B2 true JP6842029B2 (en) 2021-03-17

Family

ID=60008119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016067386A Active JP6842029B2 (en) 2016-03-30 2016-03-30 Abrasive pad

Country Status (1)

Country Link
JP (1) JP6842029B2 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009025A (en) * 2000-06-21 2002-01-11 Toray Ind Inc Polishing pad
US20030013397A1 (en) * 2001-06-27 2003-01-16 Rhoades Robert L. Polishing pad of polymer coating
JP2003089048A (en) * 2001-09-14 2003-03-25 Unitica Fibers Ltd Cloth for polishing magnetic recording disk
JP5233479B2 (en) * 2008-07-30 2013-07-10 東レ株式会社 Polishing pad
JP5222069B2 (en) * 2008-09-12 2013-06-26 富士紡ホールディングス株式会社 Polishing cloth
JP2011143533A (en) * 2009-12-16 2011-07-28 Toray Ind Inc Polishing pad and method for polishing semiconductor wafer

Also Published As

Publication number Publication date
JP2017177274A (en) 2017-10-05

Similar Documents

Publication Publication Date Title
JP5222069B2 (en) Polishing cloth
JP5233479B2 (en) Polishing pad
JP4645361B2 (en) Polishing cloth
JP2010029996A (en) Polishing pad
JP2002172555A (en) Base cloth for polishing and polishing method
JP5602752B2 (en) Polishing pad
JP6842029B2 (en) Abrasive pad
JP5033238B2 (en) Polishing pad and manufacturing method thereof
TWI763675B (en) Polishing pad and method for producing the same, and method for producing polished article
JP2007308843A (en) Abrasive cloth
TW490364B (en) Polishing sheet and its manufacture method
JP2011093083A (en) Polishing pad
JP2011143533A (en) Polishing pad and method for polishing semiconductor wafer
JP3815226B2 (en) Polishing cloth
JP2005334997A (en) Nonwoven fabric for polishing pad, and polishing pad
JPH1190836A (en) Abrasive cloth
JP2005074576A (en) Polishing cloth
CN219359123U (en) Polishing pad
JP2002059358A (en) Polishing pad, polishing device using it and polishing method
JP2006272524A (en) Polishing base fabric, and disk manufacturing method using the same
TWM617168U (en) Two-layer polishing pad made of nonwoven fabric
JP6835517B2 (en) Polishing pad and its manufacturing method, and manufacturing method of polished material
JP4432178B2 (en) Magnetic disk polishing fabric
JP5478956B2 (en) Polishing pad for notch polishing
JP2008103012A (en) Polishing knit fabric

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190228

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200110

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200310

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200424

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200622

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20200813

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201113

C60 Trial request (containing other claim documents, opposition documents)

Free format text: JAPANESE INTERMEDIATE CODE: C60

Effective date: 20201113

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20201126

C21 Notice of transfer of a case for reconsideration by examiners before appeal proceedings

Free format text: JAPANESE INTERMEDIATE CODE: C21

Effective date: 20201201

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210119

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210201

R150 Certificate of patent or registration of utility model

Ref document number: 6842029

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250