JP6839554B2 - High frequency circuit board - Google Patents

Description

The present invention relates to a high frequency circuit board.

When designing a high-frequency circuit board for a base station or an amplifier module such as a microwave heating device, it is necessary to sufficiently attenuate the high-frequency signal flowing into the power supply side. If the high-frequency signal flowing into the power supply side cannot be sufficiently attenuated, the gain becomes unstable due to the influence of the returned high-frequency signal, and in the worst case, problems such as oscillation occur.

Generally, as shown in Patent Document 1, from a high-frequency circuit, by installing a capacitor having a self-resonant frequency close to the frequency to be amplified at the position of λ / 4 on the bias feeding line side, the high-frequency circuit can be used. The impedance on the bias feeding line side as seen is increased to attenuate the high frequency signal flowing into the power supply side.

However, when handling a modulated wave signal with a bandwidth of several tens of MHz or more, it is necessary to design the parasitic inductance component of the bias feeding line as low as possible with respect to the frequency of the bandwidth from the viewpoint of linearity, so bias The power supply line is designed to have a wide line width, a short line width, and a low impedance. Further, when a large current flows, the bias feeding line is designed to have a large line width from the viewpoint of current capacity.

When an attempt is made to attenuate a high frequency signal by the method of Patent Document 1 for such a thick bias feeding line, the high frequency signal is attenuated only about 40 to 50 dB, and therefore, for example, it has a high amplification factor of 50 to 60 dB or more. In the amplifier module, the high frequency signal flowing into the power supply side cannot be sufficiently attenuated, and the above-mentioned problems occur.

Further, in a bias feeding line in which a current of several to several tens of A flows, it is difficult to use an inductor having excellent high frequency characteristics in terms of performance and cost. In such a case, a high frequency signal exceeding several GHz is particularly difficult. In, it becomes difficult to sufficiently attenuate the high frequency signal flowing into the power supply side.

Therefore, as shown in Patent Document 2, there is a technique for attenuating a high frequency signal flowing into the power supply side by using not only a capacitor but also a stub in an appropriate arrangement.

Japanese Unexamined Patent Publication No. 2006-013857 Japanese Unexamined Patent Publication No. 09-238001

However, in the technique disclosed in Patent Document 2, it is assumed that a stub is formed or connected on the bias feed line. Therefore, for example, in a substrate having a relative permittivity of 3.5, at 2 GHz. , Λ / 4 is close to about 20 mm, the stub significantly squeezes the circuit area, and there is a problem that it is difficult to miniaturize the module.

Further, when an attempt is made to form a stub without pressing the circuit area, there is a problem that the current capacity cannot be secured and the invention of Patent Document 2 cannot be carried out because the width of the bias feeding line needs to be narrowed.

The present invention has been made in view of the above points, and an object of the present invention is to provide a high-frequency circuit board that can be miniaturized while ensuring a current capacity.

In order to solve the above problems, the present invention comprises a first conductor layer having the bias feeding line and the first conductor layer having the bias feeding line in a high frequency circuit board having at least a circuit pattern for propagating a high frequency signal and a circuit pattern of the bias feeding line. It has at least one conductor layer and a second conductor layer that is arranged with a dielectric layer sandwiched between the first conductor layer and a second conductor layer that is cut off in a direct current manner. It is characterized in that a slot that resonates at a predetermined frequency corresponding to the high frequency signal is formed by electromagnetically coupling with the high frequency signal.
According to such a configuration, it is possible to provide a high-frequency circuit board that can be miniaturized while ensuring the current capacity.

Further, in the present invention, when the wavelength of the predetermined frequency is λ, a standing wave node is generated at a position λ / 4 away from the circuit pattern propagating the high frequency signal on the bias feeding line side. The slot is arranged as described above.
According to such a configuration, the high frequency signal flowing into the power supply side can be attenuated by increasing the impedance of the bias feeding line as seen from the circuit pattern.

Further, in the present invention, when the wavelength of the predetermined frequency is λ, the power supply is supplied from the capacitor connected to the bias feeding line side at a position λ / 4 away from the circuit pattern propagating the high frequency signal. The slot is arranged so that a standing wave node is generated at a position separated by λ / 4 to 5λ / 12 on the side.
According to such a configuration, the high frequency signal flowing into the power supply side can be more reliably attenuated by using the capacitor and the slot.

Further, the present invention is characterized in that a plurality of the slots are arranged along the bias feeding line.
According to such a configuration, the high frequency signal flowing into the power supply side can be more reliably attenuated by the plurality of slots.

Further, in the present invention, when the wavelength of the predetermined frequency is λ, a standing wave is located at an odd multiple of λ / 4 on the bias feeding line side from the circuit pattern propagating the high frequency signal. It is characterized in that a plurality of the above slots are arranged so as to generate the knots of
According to such a configuration, by increasing the impedance of the bias feeding line seen from the circuit pattern, the high frequency signal flowing into the power supply side can be attenuated more reliably.

Further, the present invention is characterized in that the plurality of the slots have different resonance frequencies.
According to such a configuration, the bandwidth of the attenuated high frequency signal can be widened.

In the present invention, the slot has a first gap portion and a second gap portion provided along the bias feeding line in the second conductor layer, and the first gap portion and the second gap portion in the second conductor layer. It is characterized by having a third void portion connecting the gap portions.
According to such a configuration, the stub can be configured by a simple configuration.

Further, the present invention is characterized in that the third gap is formed at the end of the first gap and the second gap in the direction along the bias feeding line.
According to such a configuration, the stub can be configured by a simple configuration.

Further, in the present invention, the first gap portion, the second gap portion, and the third gap portion form a stub connecting the ends thereof, and the bias feeding line is at least one of the stubs. It is characterized by lining the part.
According to such a configuration, the stub can be configured by a simple configuration.

Further, the present invention is characterized in that the width of the stub substantially coincides with the width of the bias feeding line in the direction orthogonal to the bias feeding line.
According to such a configuration, the high frequency signal can be further attenuated.

According to the present invention, it is possible to provide a high-frequency circuit board that can be miniaturized while ensuring a current capacity.

It is a schematic diagram which shows the structural example of the high frequency circuit board which concerns on 1st Embodiment of this invention. It is a figure which shows the detailed structural example of the high frequency circuit board which concerns on 1st Embodiment of this invention. It is a figure which shows the electric field distribution of the 1st Embodiment shown in FIG. It is a figure which shows the frequency characteristic of the 1st Embodiment shown in FIG. It is a figure which shows the application example to the circuit pattern of the resonance circuit shown in FIG. It is a figure which shows the structural example of the high frequency circuit board which concerns on 2nd Embodiment of this invention. It is a figure which shows the state of the standing wave in the slot shown in FIG. It is a figure which shows the structural example of the high frequency circuit board which concerns on 3rd Embodiment of this invention. It is a figure for demonstrating the operation of the 3rd Embodiment shown in FIG. It is a figure which shows the structural example of the high frequency circuit board which concerns on 4th Embodiment of this invention. It is a figure for demonstrating the operation of the 4th Embodiment shown in FIG. It is a figure for demonstrating the operation of the 4th Embodiment shown in FIG. It is a figure which shows the structural example of the high frequency circuit board which concerns on 5th Embodiment of this invention. It is a figure for demonstrating the operation of the 5th Embodiment shown in FIG. It is a figure for demonstrating the modified embodiment of this invention. It is a figure for demonstrating the modified embodiment of this invention. It is a figure for demonstrating the characteristic of FIG.

Next, an embodiment of the present invention will be described.

(A) Description of First Embodiment of the Present Invention FIG. 1 is a schematic view showing a configuration example of a high-frequency circuit board according to the first embodiment of the present invention. As shown in FIG. 1, the high-frequency circuit board 1 according to the first embodiment has a GND layer 20, a dielectric layer 30, and a bias feeding line 40, and is arranged on the housing 10.

Here, the housing 10 is made of, for example, a metal member, and a counterbore portion 11 is formed along the X axis at the central portion of the upper surface (the upper surface in the Z axis direction in FIG. 1), and the YY cross section is formed. It has a concave shape. The width of the counterbore portion 11 is W1 and the depth is D1.

The GND layer 20 is made of, for example, copper foil or the like, and a U-shaped slot 21 is formed along the X axis in the central portion of the GND layer 20. The slot 21 forms a stub 22 having a rectangular shape. The width of the slot 21 in the Y-axis direction is W2, and the width of the stub 22 in the Y-axis direction is W3. The slot 21 and the stub 22 are formed so as to be located directly above the counterbore portion 11. Further, the width W1 of the counterbore portion 11 in the Y-axis direction is formed so as to be wider than the width W2 of the slot 21 (so that W1> W2). Further, the slot 21 is arranged so as to be located substantially in the center of the counterbore portion 11. In the present embodiment, the central portion of the GND layer 20 is cut out in a U shape, and the gap portions 21a, 21b, and 21c are provided to form the slot 21, but the slot 21 is formed by using another configuration. May be formed.

The dielectric layer 30 is arranged between the GND layer 20 and the bias feeding line 40 so as to electrically insulate them.

The bias feeding line 40 is made of copper foil or the like, and a DC voltage for bias is applied. The width of the bias feeding line 40 in the Y-axis direction is W4, and the width W4 is set to be substantially equal to the width W3 of the stub 22. In addition, W4> W3 or W4 <W3 may be satisfied. The resonance circuit 50 is formed by the bias feeding line 40 and the stub 22. As will be described later, when W4 = W3, the high frequency signal can be attenuated most efficiently.

FIG. 2 is a diagram showing an actual configuration example of the high frequency circuit board 1 according to the first embodiment of the present invention. As shown in FIG. 2, the GND layer 20 of the high-frequency circuit board 1 is composed of, for example, a copper foil having a thickness of 35 μm. The dielectric layer 30 is composed of, for example, a dielectric having a thickness of 0.762 mm and a relative permittivity of 3.6. The bias feeding line 40 is composed of, for example, a copper foil having a thickness of 35 μm. The length of the stub 22 surrounded by the slot 21 is set to about 18 to 20 mm corresponding to λ / 4 of 2.3 GHz. Further, as described above, the bias feeding line 40 and the GND layer 20 are not electrically conductive. Needless to say, the dimensions illustrated above are examples, and dimensions other than those illustrated may be used.

FIG. 3A shows the electric field distribution when a high frequency voltage of 10 MHz is applied to the bias feeding line 40 of the embodiment shown in FIG. 2, and FIG. 3B shows 2 GHz in the embodiment shown in FIG. The electric field distribution when the high frequency voltage of is applied is shown. As shown in FIG. 3A, the electric field distribution is uniform at 10 MHz, but at 2.3 GHz, the electric field is concentrated in the slot 21, and it can be confirmed that resonance occurs.

FIG. 4 shows the frequency characteristics of the embodiment shown in FIG. As shown in FIG. 4, the embodiment shown in FIG. 2 has an attenuation characteristic of about 16 dB at a resonance frequency of 2.3 GHz.

FIG. 5 shows an application example of the resonance circuit 50 shown in FIG. As shown in FIG. 5, the resonance circuit 50 is arranged between the bias feeding line 70 that supplies the DC voltage for bias to the circuit pattern on the output side of the amplifier 61 included in the circuit pattern 60 and the DC power supply. The amplifier 61 amplifies and outputs a signal having a center frequency of, for example, 2.3 GHz and a bandwidth of, for example, 60 to 120 MHz. As described above, since the resonance circuit 50 is set so that the resonance frequency is 2.3 GHz, the signal having the center frequency of 2.3 GHz amplified by the amplifier 61 is attenuated and leaks to the power supply side. Suppress that.

Although not shown in the example of FIG. 5, by connecting a short-circuit capacitor between the bias feeding line 70 and the GND layer 20, for example, an attenuation amount of about 40 dB is applied to a 2.3 GHz signal. Can be obtained with a capacitor. Therefore, since the attenuation circuit 50 and the short-circuit capacitor shown in FIG. 5 can obtain an attenuation amount of about 56 dB, for example, even if the gain of the amplifier 61 is 50 dB, it leaks to the power supply side at 2.3 GHz. Attenuates the high frequency signal of. As a result, it is possible to prevent the gain characteristics from becoming unstable or oscillating.

As described above, according to the first embodiment of the present invention, the bias feeding line 40 and the electromagnetic wave are provided to the GND layer 20 which is not electrically (correctly, direct current) conducting with the bias feeding line 40. By forming a resonance circuit 50 that resonates at a specific frequency by coupling, the high-frequency signal flowing into the power supply side is attenuated without expanding the circuit area while securing the current capacity of the bias feeding line 40. it can. As a result, it is possible to prevent the gain characteristics from becoming unstable or oscillating.

(B) Explanation of Second Embodiment of the Present Invention FIG. 6 is a diagram showing a configuration example of the second embodiment of the present invention. In FIG. 6, the same reference numerals are given to the portions corresponding to those in FIG. 5, and the description thereof will be omitted. In FIG. 6, as compared with FIG. 5, the resonance circuit 50 is arranged at a position λ / 4 wavelength away from the feeding point P of the amplifier 61 so that the node of the standing wave comes.

FIG. 7 is a diagram showing voltage amplitudes of each portion of the resonant circuit 50. As shown in FIG. 7, when a high-frequency signal having a resonance frequency (for example, a signal of 2.3 GHz) is supplied to the resonance circuit 50, the voltage amplitude of the node indicated by the black circle in the figure becomes 0, and the tip portion of the stub 22 A standing wave with the maximum amplitude is generated. When such a standing wave is generated, the nodes indicated by black circles in the figure are in a state close to a short circuit with the GND layer 20 at the resonance frequency.

In the second embodiment, the resonance circuit 50 is arranged so that the resonance circuit node is generated at the position of λ / 4 from the feeding point P of the amplifier 61, so that the portion corresponding to the node is short-circuited with the GND layer 20. Since the impedance of the bias feeding line 40 seen from the high frequency circuit can be increased, the high frequency signal flowing into the power supply side can be attenuated. Further, in the second embodiment, since a sufficient amount of attenuation can be secured, the number of short-circuit capacitors can be reduced, which can contribute to miniaturization and cost reduction.

As described above, in the second embodiment of the present invention, the gain characteristic is unstable because the node of the resonance circuit 50 at the time of resonance is arranged at the position of λ / 4 from the feeding point P of the amplifier 61. Not only can it be prevented from becoming or oscillating, but it is also possible to reduce the number of short-circuit capacitors. This can contribute to further miniaturization and cost reduction.

(C) Explanation of Third Embodiment of the Present Invention FIG. 8 is a diagram showing a configuration example of the third embodiment of the present invention. In FIG. 8, the parts corresponding to those in FIG. 6 are designated by the same reference numerals, and the description thereof will be omitted. In FIG. 8, as compared with FIG. 6, the capacitor 63 is connected to the bias feeding line 70 which is λ / 4 away from the feeding point P. Further, the resonance circuit 50 is connected at a position of λ / 4 to 5λ / 12 from the connection point of the capacitor 63. The configuration other than these is the same as in FIG.

FIG. 9 shows the frequency characteristics of the third embodiment shown in FIG. In FIG. 9, the straight line shown by the thick solid line shows the frequency characteristics when only the capacitor 63 is added and the resonance circuit 50 is not added. As shown in this straight line, when only the capacitor 63 is added, it has a substantially flat attenuation characteristic of about -40 dB in the band of 2.1 to 2.5 GHz. The curve shown by the thick broken line with a narrow interval shows the frequency characteristics when the resonant circuit 50 is connected so that the node of the standing wave comes to the position of 2λ / 12 (= λ / 6) from the connection point of the capacitor 63. Shown. The curve shown by the thick broken line with a wide interval shows the frequency characteristics when the resonance circuit 50 is connected so that the node of the standing wave comes to the position of 3λ / 12 (= λ / 4) from the connection point of the capacitor 63. There is. The curve shown by the thick alternate long and short dash line shows the frequency characteristics when the resonance circuit 50 is connected so that the node of the standing wave comes to the position of 4λ / 12 (= λ / 3) from the connection point of the capacitor 63. The curve shown by the thick two-dot chain line shows the frequency characteristics when the resonance circuit 50 is connected so that the node of the standing wave comes to the position of 5λ / 12 from the connection point of the capacitor 63. The curve shown by the thin solid line shows the frequency characteristics when the resonance circuit 50 is connected so that the node of the standing wave comes to the position of 6λ / 12 (= λ / 2) from the connection point of the capacitor 63. The curve shown by the narrow broken line with a narrow interval shows the frequency characteristics when the resonance circuit 50 is connected so that the node of the standing wave comes to the position of 7λ / 12 from the connection point of the capacitor 63. The curve shown by a thin broken line with a wide interval shows the frequency characteristics when the resonance circuit 50 is connected so that the node of the standing wave comes to the position of 8λ / 12 from the connection point of the capacitor 63.

From the comparison of the graphs shown in FIG. 9, it can be seen that the amount of attenuation deteriorates sharply at the positions of λ / 6 and 2λ / 3. Further, it can be seen that a sufficient amount of attenuation can be secured between λ / 4 and 5λ / 12. From the above, a larger effect can be obtained by installing the resonance circuit 50 so that the node of the standing wave comes at the position of λ / 4 to 5λ / 12 from the capacitor 63 on the power supply side.

As described above, in the third embodiment of the present invention, the capacitor 63 is connected at the position of λ / 4 from the feeding point P of the amplifier 61, and the connection point of the capacitor 63 is λ / 4 to 5λ / 12. Since the resonance circuit 50 is installed at the position so that the node of the standing wave comes, it is possible not only to prevent the gain characteristics from becoming unstable or oscillating, but also to efficiently attenuate the high frequency signal. be able to.

(D) Explanation of Fourth Embodiment of the Present Invention FIG. 10 is a diagram showing a configuration example of the fourth embodiment of the present invention. In the fourth embodiment, a plurality of resonance circuits 50 are connected in series for use. More specifically, in the fourth embodiment, a plurality of slots 21 are provided along the bias feeding line 70. When connected in series, the distance between the nodes of the adjacent resonance circuits 50 is set to be (2n + 1) λ / 4 (n = 0, 1, 2, ...).

FIG. 11 is a diagram showing a change in frequency characteristics depending on the number of resonance circuits 50 connected in series. In FIG. 11, the solid line shows the frequency characteristic when one resonance circuit 50 is used, the broken line with a short interval shows the frequency characteristic when two resonance circuits 50 are connected in series, and the broken line with a long interval shows the resonance circuit. The frequency characteristics when three 50s are connected in series are shown. As shown in FIG. 11, the larger the number of resonant circuits 50 connected in series, the larger the amount of attenuation.

FIG. 12 is a diagram showing a change in frequency characteristics depending on the connection interval (internode interval) when two resonant circuits 50 are connected in series. The solid line in FIG. 12 shows the frequency characteristics when the spacing between the nodes of the two resonant circuits 50 is set to λ / 4, and the broken line with a short spacing indicates the spacing between the nodes of the two resonant circuits 50 is λ / 2. The frequency characteristic when set to 3 is shown, the broken line with a long interval shows the frequency characteristic when the interval between the nodes of the two resonant circuits 50 is set to 3λ / 4, and the one-point chain line is the frequency characteristic of the two resonant circuits 50. The frequency characteristics when the spacing between nodes is set to λ are shown. As shown in FIG. 12, a larger amount of attenuation can be obtained when the interval between the nodes of the standing wave generated in the resonance circuit 50 is an odd multiple of λ / 4.

As described above, in the fourth embodiment of the present invention, a plurality of (two or more) resonance circuits 50 are connected in series, and the interval between the nodes of the adjacent resonance circuits 50 is an odd multiple of λ / 4. Since it is set to be, not only can it prevent the gain characteristics from becoming unstable or oscillating, but also when a plurality of resonance circuits 50 are connected in series, the high frequency signal is efficiently attenuated. can do. When a plurality of resonance circuits 50 are connected in series, the amount of attenuation is larger than that of one, so that the capacitor 63 can be omitted. The capacitor 63 is generally expensive because it needs to be able to handle high frequencies and have high withstand voltage characteristics. Therefore, the cost can be reduced by omitting the capacitor 63.

(E) Description of the Fifth Embodiment of the Present Invention FIG. 13 is a diagram showing a configuration example of the fifth embodiment of the present invention. In the fifth embodiment, a plurality of resonance circuits 50-1, 50-2 having different resonance frequencies are connected in series and used. The resonance circuits 50-1 and 50-2 have the same configuration as that of FIG. 2, but are configured so that the resonance frequencies are different. Further, when connecting in series, the distance between the nodes of the resonant circuits 50-1, 50-2 is set to be (2n + 1) λ / 4 (n = 0, 1, 2, ...). To. Further, the resonance frequency of the resonance circuit 50-1 is set to f1, and the resonance frequency of the resonance circuit 50-2 is set to f2. As an example, f1> f2 can be set.

FIG. 14 is a diagram showing frequency characteristics when the resonance frequencies f1 and f2 of the resonance circuits 50-1 and 50-2 connected in series are changed. In FIG. 14, the solid line shows the frequency characteristics when f1 = f2 = 2.3 GHz is set, and the broken line shows the frequency characteristics when f1 = 2.2 GHz and f2 = 2.3 GHz are set. As shown in FIG. 14, when f1 = 2.2 GHz and f2 = 2.3 GHz are set, the characteristics can be widened.

In the example of FIG. 14, two resonance circuits 50-1 and 50-2 are connected in series, but three or more resonance circuits may be connected in series.

As described above, in the fourth embodiment of the present invention, a plurality of resonance circuits 50 having different resonance frequencies are connected in series, and the interval between nodes of adjacent resonance circuits 50 is an odd multiple of λ / 4. Since the setting is made so as to be, not only the gain characteristics can be prevented from becoming unstable or oscillating, but also when the high frequency signal has a bandwidth, f1 and f2 are set according to the bandwidth. By setting, the high frequency signal can be reliably attenuated.

(F) Description of Modified Embodiments It goes without saying that each of the above embodiments is an example, and the present invention is not limited to the cases described above. For example, as the resonance circuit 50, those having the structures shown in FIGS. 15A to 15I may be used.

More specifically, in FIG. 15A, the width of the stub 22 is set narrower than in the case of FIG. Even with such a configuration, it is possible to prevent the gain characteristics from becoming unstable or oscillating by attenuating the high-frequency signal leaking to the power supply side. Further, FIG. 15B is a configuration example in which the slot 21 and the stub 22 are bent to the right in the middle. FIG. 15C shows a configuration example in which the widthwise half (right half) of the slot 21 and the stub 22 overlaps with the bias feeding line 40, and the other half (left half) is arranged in a non-overlapping positional relationship. is there. FIG. 15D is a configuration example in which the slot 21 and the stub 22 are arranged in a positional relationship substantially orthogonal to the bias feeding line 40. FIG. 15 (E) is a configuration example in which the slot 21 and the stub 22 are arranged in a positional relationship that diagonally intersects the bias feeding line 40. FIG. 15F is a configuration example in which two stubs extend from the vertical direction with respect to the slot 21. FIG. 15 (G) shows a configuration example in which two stubs extend from the vertical direction with respect to the slot 21, and the slot 21 and the two stubs and the bias feeding line 40 are substantially orthogonal to each other. is there. FIG. 15H is a configuration example in which the node of the standing wave generated in the resonance circuit 50 is located on the power supply side. FIG. 15 (I) is a configuration example in which only the slot 21 is formed and the stub 22 is not formed.

Even when the configuration examples shown in FIGS. 15A to 15I are used, the high frequency signal can be attenuated, so that the gain characteristics can be prevented from becoming unstable or oscillating.

Further, in FIG. 16, the portion of the slot 21 and the length L2 of the stub 22 is arranged at a position overlapping with the bias feeding line 40, and the portion of the length (L1-L2) of the slot 21 and the stub 22 is the bias feeding line 40. This is a configuration example that is arranged at a position that does not overlap with. FIG. 17 is a diagram showing the frequency characteristics of the resonance circuit 50 when L2 / L1 is changed in the configuration example shown in FIG. As shown in FIG. 17, when L2 / L1 is 0%, that is, when the slot 21 and the stub 22 do not overlap with the bias feeding line 40, the attenuation amount is about -3 dB, but L2 / L1 is 7. The amount of attenuation increases as it increases to%, 14%, 23%, 47%, and 90%. As a result, in the configuration example shown in FIG. 16, a desired attenuation amount can be obtained by adjusting the ratio of L2 / L1. Further, from the results shown in FIG. 17, it can be seen that the larger the overlapping area between the slot 21 and the stub 22 and the bias feeding line 40, the larger the amount of attenuation. From this, it is preferable to design the slot 21 and the stub 22 so that W3 = W4.

Further, in each of the above embodiments, the GND layer 20 and the bias feeding line 40 are made of copper foil, but if it is a conductive metal, a metal foil other than copper may be used. For example, foils such as gold, silver, and aluminum may be used, or platings thereof may be used. Further, instead of plating, a conductive metal may be vapor-deposited. Alternatively, a conductive paste (for example, copper paste) may be applied to the surface.

Further, in the first embodiment shown in FIG. 1, the counterbore portion 11 is provided in the housing 10, but when the housing 10 is not conductive (for example, when it is composed of a resin or the like), the counterbore portion is provided. 11 does not necessarily have to be provided.

1 High-frequency circuit board 10 Housing 11 Counterbore 20 GND layer (second conductor layer)
21 Slot 21a Void part (1st gap part)
21b gap (second gap)
21c gap (third gap)
22 Stub 30 Dielectric layer 40 Bias feeding line (1st conductor layer)
50 Resonant circuit 60 Circuit pattern 61 Amplifier 62 Matching circuit 63 Capacitor 70 Bias feeding line

Claims (7)

In a high-frequency circuit board having at least a circuit pattern for propagating a high-frequency signal and a circuit pattern for a bias feeding line.
The first conductor layer having the bias feeding line and
It has at least a first conductor layer and a second conductor layer that is arranged so as to sandwich the dielectric layer and that is shielded from the first conductor layer in a direct current manner.
The second conductor layer is formed with a slot that is electromagnetically coupled to the bias feeding line and resonates at a predetermined frequency corresponding to the high frequency signal .
When the wavelength of the predetermined frequency is λ, the capacitor connected to the bias feeding line side at a position λ / 4 away from the circuit pattern propagating the high frequency signal is λ / 4 to the power supply side. A high-frequency circuit board characterized in that the slots are arranged so that a standing wave node is generated at a position separated by 5λ / 12. In a high-frequency circuit board having at least a circuit pattern for propagating a high-frequency signal and a circuit pattern for a bias feeding line.
The first conductor layer having the bias feeding line and
It has at least a first conductor layer and a second conductor layer that is arranged so as to sandwich the dielectric layer and that is shielded from the first conductor layer in a direct current manner.
The second conductor layer is formed with a slot that is electromagnetically coupled to the bias feeding line and resonates at a predetermined frequency corresponding to the high frequency signal.
A plurality of the slots are arranged along the bias feeding line, and the slots are arranged along the bias feeding line .
When the wavelength of the predetermined frequency is λ, a plurality of standing wave nodes are generated on the bias feeding line side at an odd multiple of λ / 4 from the circuit pattern propagating the high frequency signal. high frequency circuit board you wherein slots are arranged. The high-frequency circuit board according to claim 2 , wherein the plurality of slots have different resonance frequencies. The slot includes a first gap portion and a second gap portion provided along the bias feeding line in the second conductor layer, and a second gap portion.
In the second conductor layer, the first gap portion and the third gap portion connecting the second gap portion and the third gap portion are
The high frequency circuit board according to any one of claims 1 to 3 , wherein the high frequency circuit board has. The high-frequency circuit board according to claim 4 , wherein the third gap is formed at the end of the first gap and the second gap in a direction along the bias feeding line. The first gap, the second gap, and the third gap form a stub that connects the ends of each other.
The high-frequency circuit board according to claim 4 or 5 , wherein the bias feeding line covers at least a part of the stub. The high frequency circuit board according to claim 6 , wherein the width of the stub substantially matches the width of the bias feeding line in a direction orthogonal to the bias feeding line.

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