JP6834547B2 - Sensor sheet and sensor system - Google Patents

Description

The present disclosure relates to sensor sheets and sensor systems that sensitively detect both pressure and temperature.

In recent years, sensors that detect physical quantities such as pressure, strain, temperature, and light and convert them into electrical signals have been attempted to be applied to all devices. For example, Patent Document 1 discloses a pressure sensor device using a pressure-sensitive member containing an insulating resin and conductive particles. Further, Patent Document 1 discloses a sheet-shaped pressure sensor device using a thin film transistor. Hereinafter, the sheet-shaped sensor device will be referred to as a sensor sheet.
Further, Patent Document 2 discloses a technique for detecting a light distribution using an active matrix.

Japanese Unexamined Patent Publication No. 2012-053050 International Publication No. 2012/029403

In recent years, it has been studied to mount a plurality of types of sensors having different physical quantities to be detected on one device. On the other hand, as in the sensor sheet exemplified in Patent Document 1, in one sensor sheet, the physical quantity to be detected is often one type. Therefore, for example, when trying to detect two different physical quantities of pressure and temperature, it is assumed that two sensor sheets are laminated and used, but there is a concern that sufficient sensitivity cannot be obtained. Therefore, there is a demand for a sensor sheet capable of detecting both pressure and temperature with high sensitivity.
The present disclosure has been made in view of the above circumstances, and an object of the present disclosure is to provide a sensor sheet and a sensor system capable of detecting both pressure and temperature with high sensitivity.

In order to achieve the above object, the present disclosure is a sensor sheet in which a substrate, a plurality of thin film transistors, and a sensor member are laminated in this order and further have a common electrode. The sensor member includes a pressure sensitive member and a temperature sensitive member. The pressure-sensitive member and the temperature-sensitive member are arranged adjacent to each other in a plan view, and the common electrode is the thin film transistor and the first common electrode electrically connected to the pressure-sensitive member. Provided is a sensor sheet having the thin film transistor and a second common electrode electrically connected to the temperature sensitive member.

The present disclosure is a sensor system having the above-mentioned sensor sheet and the control unit, and the control unit independently applies potential to the first common electrode and the second common electrode of the sensor sheet. Provided is a sensor system characterized in that it can be set.

The sensor sheet and sensor system of the present disclosure have the effect of being able to detect both pressure and temperature with high sensitivity.

It is a schematic plan view and a schematic sectional view which shows an example of the sensor sheet of this disclosure. It is the schematic sectional drawing which shows an example of the pressure sensitive member in this disclosure. It is the schematic sectional drawing which shows an example of the temperature sensitive member in this disclosure. It is the schematic sectional drawing which shows the other example of the sensor sheet of this disclosure. It is a schematic plan view and sectional view which shows an example of the TFT and the 2nd common electrode in this disclosure, and another example of the sensor sheet of this disclosure. It is the schematic plan view which shows an example of the TFT and the 2nd common electrode in this disclosure, and another example of the sensor sheet of this disclosure. It is the schematic plan view and schematic sectional view which shows the other example of the sensor sheet of this disclosure. It is the schematic sectional drawing which shows the other example of the sensor sheet of this disclosure. It is a figure explaining the sensor electrode and the sensor member in an Example.

Hereinafter, the sensor sheet and the sensor system of the present disclosure will be described in detail.

A. Sensor sheet The sensor sheet of the present disclosure is a sensor sheet in which a substrate, a plurality of thin films, and a sensor member are laminated in this order and further has a common electrode. The sensor member has a pressure-sensitive member and a temperature-sensitive member. In a plan view, the pressure-sensitive member and the temperature-sensitive member are arranged adjacent to each other, and the common electrode includes the thin film, the first common electrode electrically connected to the pressure-sensitive member, and the thin film. It is characterized by having a second common electrode electrically connected to the temperature sensor.
Hereinafter, in the present specification, a thin film transistor may be referred to as a TFT.
Further, "electrically connected" means that the members are electrically connected by being in direct contact with each other, and that the members are electrically connected by being continuously configured by using the same material. That is, it means that other members are arranged between the members to be electrically connected. In addition, in this specification, "electrically connected" may be described simply as "connecting".

The sensor sheet of the present disclosure will be described with reference to the drawings. 1 (a) is a schematic plan view showing an example of the sensor sheet of the present disclosure, FIG. 1 (b) is a sectional view taken along line AA of FIG. 1 (a), and FIG. 1 (c) is a diagram ( It is sectional drawing of BB line of a). The sensor sheet 10 shown in FIGS. 1 (a) to 1 (c) is laminated with a substrate 1, a plurality of TFTs 2, and a sensor member 3 in this order, and further has a common electrode 4. The sensor member 3 has a pressure-sensitive member 31 and a temperature-sensitive member 32, and the pressure-sensitive member 31 and the temperature-sensitive member 32 are arranged adjacent to each other in a plan view. The common electrode 4 has a first common electrode 41 electrically connected to the TFT 2 and the pressure sensitive member 31, and a second common electrode 42 electrically connected to the TFT 2 and the temperature sensitive member 32. In FIG. 1A, the substrate is omitted for ease of explanation, and the first common electrode 41 is shown by a alternate long and short dash line.
The TFT 2 typically has at least a first electrode 21, a first insulating layer 22, a second electrode 23, a third electrode 24, and a semiconductor layer 25. The first electrode 21 is electrically connected to the first wiring 5, and the second electrode 23 is electrically connected to the second wiring 6. Further, the third electrode 24 is electrically connected to the sensor member 3 and the common electrode 4.
In FIGS. 1A to 1C, the first electrode 21 is the gate electrode, the first insulating layer 22 is the gate insulating layer, the second electrode 23 is the source electrode, and the third electrode 24 is the drain. The electrodes, the first wiring 5 is the scan wiring, the second wiring 6 is the data wiring, and the substrate 1, the first electrode 21 (gate electrode), the first insulating layer 22 (gate insulating layer), and the second electrode The TFT 2 having a bottom gate structure in which 23 (source electrode), third electrode 24 (drain electrode), semiconductor layer 25, and second insulating layer (passion layer 26) are laminated in this order is illustrated. Further, as shown in FIG. 2, the TFT 2 in the present disclosure includes a substrate 1, a second electrode 23 (source electrode), a third electrode 24 (drain electrode), a first insulating layer 22 (gate insulating layer), and a first. The TFT 2 may have a top gate structure in which one electrode 21 (gate electrode) and a second insulating layer (overcoat layer 27) are laminated in this order. 2 is a schematic cross-sectional view showing another example of the sensor sheet of the present disclosure, FIG. 2A corresponds to a cross section in FIG. 1B, and FIG. 2B corresponds to FIG. 1C. Corresponds to the cross section in. The reference numerals not described are the same as those in FIG. The reference numerals not described in the following drawings are the same as those in the drawings described above.

According to the present disclosure, the sensor member has a configuration in which the pressure-sensitive member and the temperature-sensitive member are adjacent to each other in a plan view, and the common electrode is the first common electrode connected to the pressure-sensitive member and the temperature-sensitive member. By having the second common electrode connected to the member, it is possible to obtain a sensor sheet capable of detecting both pressure and temperature with high sensitivity.

Here, in many cases, the conventional sensor sheet has only a sensor member that detects one type of physical quantity. Therefore, for example, in order to detect two types of physical quantities, pressure and temperature, two sensor sheets are a pressure sensor sheet having a pressure-sensitive member as a sensor member and a temperature sensor sheet having a temperature-sensitive member as a sensor member. Must be used. Further, as a specific usage mode, it is assumed that the pressure sensor sheet and the temperature sensor sheet are laminated and used.
However, when two sensor sheets are laminated, pressure and heat to be detected by each sensor member are applied from one sensor sheet side, so that the thickness of one sensor sheet is equivalent to the sensor member in the other sensor sheet. There is a concern that the pressure or heat to be detected will be difficult to transfer and the sensitivity will decrease.

On the other hand, in the sensor sheet of the present disclosure, the sensor member has a pressure-sensitive member and a temperature-sensitive member, and the pressure-sensitive member and the temperature-sensitive member are arranged adjacent to each other in a plan view. It is possible to easily transfer pressure and heat to the pressure member and the temperature sensitive member, respectively. Furthermore, since the sensor sheet of the present disclosure has two common electrodes, a first common electrode and a second common electrode, the sensor sheet is applied to the first common electrode according to the sensitivity required for the pressure sensitive member and the temperature sensitive member. The potential applied to the second common electrode and the potential applied to the second common electrode can be adjusted separately. Therefore, both pressure and heat can be detected with high sensitivity.

When two sensor sheets are laminated, it is assumed that each sensor sheet is thinned as a method of suppressing a decrease in sensitivity. However, there is a limit to thinning the sensor sheet.
Further, in the case where two thin-film sensor sheets are laminated, particularly when the pressure-sensitive member and the temperature-sensitive member have a structure in which they overlap in a plan view, the change in the electrical resistance of the sensor member in one sensor sheet becomes large. There is also concern that malfunctions may occur due to changes in the electrical resistance of the sensor members on the other sensor sheet. Further, in the two sensor sheets, when the pressure-sensitive member and the temperature-sensitive member are formed so as not to overlap in a plan view and the two are bonded together, the manufacturing process may be complicated and the cost may increase.

On the other hand, in the present disclosure, since the pressure-sensitive member and the temperature-sensitive member are arranged adjacent to each other in a plan view, the electric resistances of the pressure-sensitive member and the temperature-sensitive member are respectively. Changes in the above are less likely to affect each other, and malfunctions can be suppressed. Further, in the present disclosure, since both the pressure-sensitive member and the temperature-sensitive member can be directly formed on one substrate, the manufacturing process can be simplified as compared with the case where two sensor sheets are bonded together. , Cost can be suppressed.

Further, in the present disclosure, the first common electrode and the second common electrode are arranged so as to be connected to one substrate and adjacent pressure-sensitive members and temperature-sensitive members in a plan view, respectively. .. By having such a structure, it is possible to further suppress the influence of the electric resistance of the pressure-sensitive member and the electric resistance of the temperature-sensitive member on each other.

In recent years, since sensors have been tried to be applied to various devices, it is desired that the sensor sheet is thinner and lighter.
In the sensor sheet of the present disclosure, since the pressure-sensitive member and the temperature-sensitive member can be arranged on one substrate, the thin film and the weight can be reduced as compared with the case where the two sensor sheets are laminated.

Hereinafter, the sensor sheet of the present disclosure will be described for each configuration.

1. 1. Sensor member The sensor member in the present disclosure is a member arranged on the side opposite to the substrate side of the TFT. In the present disclosure, one TFT, a sensor member corresponding to one TFT, and a common electrode constitute one sensor unit. The sensor members in the present disclosure are arranged so as to correspond to individual TFTs.

Further, the sensor member in the present disclosure has a pressure-sensitive member and a temperature-sensitive member, and the pressure-sensitive member and the temperature-sensitive member are arranged adjacent to each other in a plan view.
Here, "the pressure-sensitive member and the temperature-sensitive member are arranged adjacent to each other in a plan view" means that the sensor member corresponding to one of the adjacent TFTs is felt at at least one of the plurality of TFTs. It is a pressure member, and the sensor member corresponding to the other is a temperature sensitive member. Further, in this case, one TFT is usually electrically connected to one of the temperature-sensitive member or the pressure-sensitive member, and is not electrically connected to the other.

(1) Pressure-sensitive member A pressure-sensitive member is a member whose electrical resistance changes by applying pressure. Further, the pressure sensitive member is arranged so as to be electrically connected to the TFT and the first common electrode. In the present disclosure, the TFT, the pressure sensitive member, and the first common electrode function as a pressure sensor, and for example, a current value at a reference pressure, that is, a current value at the time of calibration and a current when a pressure to be detected is applied. The pressure can be detected by comparing with the value and processing. In the following description, a portion of the sensor sheet that functions as a pressure sensor may be referred to as a pressure sensor portion.

(A) Structure of pressure-sensitive member The pressure-sensitive member is not particularly limited as long as it is a member whose electrical resistance changes by applying pressure, but for example, the pressure-sensitive member may be a member whose electrical resistance is reduced by applying pressure. preferable. Examples of the pressure-sensitive member include a member having an insulating resin 31a and conductive particles 31b dispersed in the insulating resin 31a, as shown in FIGS. 3A and 3B. .. In the pressure-sensitive member 31 shown in FIGS. 3A and 3B, when the pressure P is applied, the insulating resin 31a bends, and the conductive particles 31b in the insulating resin 31a come into contact with each other to generate electricity. It is a member that reduces resistance.

The insulating resin used for the pressure-sensitive member is not particularly limited as long as it can disperse conductive particles and has elasticity that deforms in response to pressure, and is a resin used in a general pressure sensor device. Can be used.
Examples of the insulating resin include silicon resin, fluororesin, polyamide resin, acrylic resin, polyurethane resin, polyester resin, epoxy resin, butyral resin, styrene-ethylene-olefin copolymer and styrene-butylene-olefin copolymer. In addition, olefin-ethylene copolymers, olefin-butylene copolymers, olefin-olefin copolymers and the like can be mentioned. Above all, it is preferable to use a silicon resin. This is because it has excellent insulating properties and is excellent in stability over time. Further, the insulating resin may be used by mixing two or more kinds of materials.

The conductive particles used in the pressure-sensitive member may be any as long as they have desired conductivity, and conductive particles used in a general pressure sensor device can be used.
Examples of the material constituting the conductive particles include graphite, conductive carbon, copper, aluminum, nickel, iron, conductive tin oxide which is a metal oxide, and conductive titanium oxide. Further, as the conductive particles, for example, carbon-based particles such as carbides of an organic resin can be used. In the present disclosure, it is preferable to use graphite.

The average particle size of the conductive particles is appropriately selected according to the type of the conductive particles and the sensitivity required for the pressure sensor unit, but the average particle size used in a general pressure sensor device can be adopted. .. The average particle size of the conductive particles may be, for example, 0.1 μm or more and 500 μm or less.
The average particle size is the average particle size obtained by microscopic observation. The average particle size obtained by microscopic observation can be obtained, for example, by performing microscopic observation at 100 times, measuring 100 particle sizes of arbitrary conductive particles with image processing software, and averaging the number of particles. The particle size refers to the average value of the major axis diameter and the minor axis diameter of the conductive particles.

The ratio of the conductive particles in the pressure-sensitive member is appropriately selected according to the type of the conductive particles and the sensitivity required for the pressure sensor unit, but the ratio used in a general pressure sensor device can be adopted. .. The proportion of the conductive particles in the pressure-sensitive member may be, for example, 1% by mass or more, 10% by mass or more, or 20% by mass or more. Further, the proportion of the conductive particles may be 99% by mass or less, 70% by mass or less, or 60% by mass or less.

The pressure-sensitive member contains an insulating resin and conductive particles, but may also contain a hardness adjusting agent such as a silica-based powder filler, if necessary.

The thickness of the pressure-sensitive member is not particularly limited as long as it can exhibit a desired sensitivity, and a pressure sensor device generally used can be used. Specifically, the thickness of the pressure-sensitive member is preferably 1 μm or more, particularly preferably 5 μm or more. The thickness of the pressure-sensitive member is preferably 10 mm or less, particularly preferably 1 mm or less, particularly 500 μm or less. The thickness of the pressure-sensitive member means the maximum value of the distance between the surface of the pressure-sensitive member on the substrate side and the surface on the side opposite to the substrate side. In the present disclosure, the thickness of the pressure-sensitive member is preferably thicker than the thickness of the temperature-sensitive member described later.

The plan-view shape of the pressure-sensitive member is not particularly limited as long as it can electrically connect the TFT and the first common electrode, and even if it is a rectangular shape such as a quadrangle, it is a circular shape. Is also good. Further, the plan-view shape of the pressure-sensitive member may be, for example, a line shape such as a linear shape or a strip shape. The line width can be appropriately selected according to the application, size, and the like of the sensor sheet.

(B) Arrangement of pressure-sensitive members The pressure-sensitive members are arranged so as to electrically connect the TFT and the first common electrode. "The pressure-sensitive member is electrically connected to the TFT" means that the electrode connected to the first common electrode in the TFT and the pressure-sensitive member are electrically connected, and the TFT is the first electrode. , When having a second electrode and a third electrode, it means that the pressure sensitive member is electrically connected to the third electrode in the TFT. Further, in this case, the pressure sensitive member is usually arranged so as not to be connected to the first electrode and the second electrode in the TFT.

As shown in FIG. 3A, the pressure-sensitive member may be arranged so as to electrically connect the TFT 2 and the first common electrode 41 in the thickness direction Y of the TFT 2, and FIG. 3B may be arranged. As shown in the above, the TFT 2 and the first common electrode 41 may be arranged so as to be electrically connected in the plane direction X, but the former is more preferable. As described above, as the pressure-sensitive member, a member containing an insulating resin and conductive particles can be preferably used. Since the pressure-sensitive member lowers the electric resistance by bending the insulating resin, the electric resistance tends to be changed more easily in the thickness direction of the thickness direction and the surface direction. Therefore, by arranging the pressure-sensitive member to electrically connect the TFT and the first common electrode in the thickness direction of the TFT, it is easy to detect the pressure with better sensitivity.

The arrangement of the pressure-sensitive member in a plan view is not particularly limited as long as the TFT and the first common electrode can be electrically connected, but it is preferably formed so as not to overlap the TFT in a plan view. This is because the change in the electric resistance of the pressure-sensitive member can suppress the malfunction due to the influence on the TFT. Here, the "position where the pressure sensitive member does not overlap the TFT in the plan view" specifically means a position where the portion of the TFT that functions as a transistor and the pressure sensitive member do not overlap in the plan view. Typically, it refers to a position where the channel portion provided between the second electrode and the third electrode of the TFT and the pressure sensitive member do not overlap at least in a plan view. Further, the pressure-sensitive member may be arranged in a plan view at a position where the laminated portion of the first electrode, the second electrode, the third electrode, and the semiconductor layer in the TFT and the pressure-sensitive member do not overlap in the plan view. ..

The pressure-sensitive member may be arranged so as to electrically connect one TFT and the first common electrode, for example, or may be arranged so as to electrically connect a plurality of TFTs and the first common electrode. Is also good. When the plurality of TFTs and the first common electrode are arranged so as to be electrically connected, the pressure sensitive member can be arranged, for example, along the line direction of the first wiring or the second wiring.

(C) Other methods for forming the pressure-sensitive member are not particularly limited as long as the pressure-sensitive member having a desired shape can be formed. Examples of the pressure-sensitive member forming method include various printing methods such as an inkjet printing method, a gravure printing method, a screen printing method, and a flexographic printing method. As a specific example of the method for forming the pressure-sensitive member, for example, a paste-like composition obtained by mixing carbon particles with thermosetting silicon rubber is formed into dots by a screen printing method, and then heat-treated at, for example, about 150 ° C. By curing the composition, a pressure-sensitive member can be obtained.

(2) Temperature-sensitive member The temperature-sensitive member is a member whose electrical resistance changes with a change in temperature. Further, the temperature sensitive member is arranged so as to electrically connect the TFT and the second common electrode. The TFT, temperature sensitive member and common electrode function as a temperature sensor. In the following description, a portion of the sensor sheet that functions as a temperature sensor may be referred to as a temperature sensor unit.

(A) Structure of the temperature-sensitive member The temperature-sensitive member is not particularly limited as long as it is a member whose electrical resistance changes due to a temperature change, but for example, a member whose electrical resistance increases by raising the temperature from a reference temperature by heating. Is preferable. Examples of such a temperature-sensitive member include a member containing a polymer PTC (positive temperature coefficient) as shown in FIGS. 4 (a) and 4 (b). The polymer PTC is a material containing an insulating material 32a having thermal expansion properties and conductive particles 32b. In the temperature-sensitive member 32 shown in FIGS. 4A and 4B, the insulating material 32a thermally expands by applying heat T, and the conductive particles 32b in the insulating material 32a are separated from each other. It is a member that increases electrical resistance.

The insulating material used for the polymer PTC is not particularly limited as long as it can disperse conductive particles and has a property of thermal expansion, and is known as an insulating material used for a general polymer PTC. Can be used. As an example, a polymer of octadecyl acrylate and butyl acrylate (acrylic polymer) can be mentioned. The acrylic polymer can adjust the temperature at which the insulating material thermally expands by adjusting the synthesis ratio of octadecyl acrylate and butyl acrylate, and can adjust the temperature at which the electrical resistance of the pressure-sensitive member changes. it can.
Further, as another example of the insulating material, a thermosetting silicone rubber can be mentioned.

Examples of the material constituting the conductive particles include carbon-based particles such as graphite and conductive carbon.

The average particle size of the conductive particles is appropriately selected according to the type of the conductive particles and the sensitivity required for the temperature sensor unit, but the average particle size used in a general temperature sensor device can be adopted. .. The average particle size of the conductive particles may be, for example, 0.1 μm or more and 500 μm or less.
Since the method for measuring the average particle size can be the same as that described in the section "(1) Pressure-sensitive member (a) Configuration of pressure-sensitive member" described above, the description thereof is omitted here. ..

The proportion of the conductive particles in the temperature sensitive member is appropriately selected according to the type of the conductive particles and the sensitivity required for the temperature sensor unit, and the proportion used in a general temperature sensor device can be adopted. The proportion of conductive particles in the temperature sensitive member is, for example, 1% by mass or more and 99% by mass or less.

The temperature-sensitive member is a member containing an insulating resin and conductive particles, but may also contain a hardness adjusting agent such as a silica-based powder filler, if necessary.

The thickness of the temperature-sensitive member is not particularly limited as long as it can exhibit a desired sensitivity, and a member generally used for a temperature sensor device can be used. The thickness of the temperature sensitive member is, for example, preferably 1 μm or more, particularly preferably 10 μm or more, particularly 15 μm or more. Further, the thickness of the temperature sensitive member is preferably 1 mm or less, particularly preferably 500 μm or less, particularly 200 μm or less. The thickness of the temperature-sensitive member means the maximum value of the distance between the surface of the temperature-sensitive member on the substrate side and the surface on the side opposite to the substrate side. The thickness of the temperature-sensitive member is preferably thinner than the thickness of the pressure-sensitive member described above.

The plan-view shape of the temperature-sensitive member is not particularly limited as long as it can electrically connect the TFT and the second common electrode, and even if it is a rectangular shape such as a quadrangle, it is a circular shape. Is also good. Further, the plan-view shape of the temperature-sensitive member may be, for example, a line shape such as a linear shape or a strip shape. The line width can be appropriately selected according to the application, size, and the like of the sensor sheet.

(B) Arrangement of the temperature-sensitive member The temperature-sensitive member is arranged so as to electrically connect the TFT and the second common electrode. "The temperature-sensitive member is electrically connected to the TFT" means that the electrode connected to the second common electrode in the TFT and the temperature-sensitive member are electrically connected, and the TFT is the first electrode. , When having a second electrode and a third electrode, it means that the temperature sensitive member is electrically connected to the third electrode in the TFT. Further, in this case, the temperature sensitive member is usually arranged so as not to be connected to the first electrode and the second electrode in the TFT.

As shown in FIG. 4 (a), the temperature sensitive member may be arranged so as to electrically connect the TFT 2 and the second common electrode 42 in the thickness direction Y of the TFT 2, and FIG. 4 (b) shows. As shown, the TFT 2 and the second common electrode 42 may be arranged so as to be electrically connected in the plane direction X, but the latter is more preferable. As described above, as the temperature sensitive member, a member containing a polymer PTC can be preferably used. Since such a temperature-sensitive member increases the electric resistance by expanding the insulating material by applying heat, the electric resistance tends to be easily changed in the surface direction of the thickness direction and the surface direction. .. Therefore, by arranging the temperature sensitive member to electrically connect the TFT and the second common electrode in the plane direction of the TFT, it is easy to detect the temperature with better sensitivity.

The arrangement of the temperature sensing member in a plan view is not particularly limited as long as the TFT and the second common electrode can be electrically connected, but it is preferably formed so as not to overlap the TFT in a plan view. This is because the change in the electric resistance of the temperature-sensitive member can suppress the malfunction due to the influence on the TFT.
Here, the "position where the temperature sensitive member does not overlap with the TFT in plan view" specifically means a position where the portion of the TFT that functions as a transistor and the temperature sensitive member do not overlap in plan view. Typically, it refers to a position where the channel portion provided between the second electrode and the third electrode of the TFT and the temperature sensing member do not overlap at least in a plan view. Further, the arrangement of the temperature sensitive member in the plan view may be a position where the laminated portion of the first electrode, the second electrode, the third electrode and the semiconductor layer in the TFT and the temperature sensitive member do not overlap in the plan view. ..

The temperature sensitive member may be arranged so as to electrically connect one TFT and the second common electrode, for example, or may be arranged so as to electrically connect a plurality of TFTs and the second common electrode. Is also good. When the plurality of TFTs and the second common electrode are arranged so as to be electrically connected, the temperature sensitive member can be arranged, for example, along the line direction of the first wiring or the second wiring.

(C) Others The method for forming the temperature-sensitive member is not particularly limited as long as the temperature-sensitive member having a desired shape can be formed. Examples of the method for forming the temperature-sensitive member include an inkjet method and a dispenser method. As a specific example of the method for forming the temperature-sensitive member, for example, the composition containing the precursor of the insulating material and the conductive particles described above is formed into dots by using a dispenser adjusted to a temperature of, for example, about 80 ° C. A method of obtaining a temperature-sensitive member by forming the member can be mentioned.

(3) Sensor member The sensor member in the present disclosure includes the pressure-sensitive member described above and the temperature-sensitive member. In the present disclosure, in the sensor sheet, it is sufficient that the pressure-sensitive member and the temperature-sensitive member are arranged adjacent to each other in a plan view, and the ratio (number ratio) of the pressure-sensitive member and the temperature-sensitive member in the sensor member is Can be appropriately selected depending on the use of the sensor sheet, and is not particularly limited.

Further, it is preferable that the sensor member in the present disclosure is arranged at a position where it does not overlap with the TFT in a plan view, for example. More specifically, it is particularly preferable that the TFT and both the pressure-sensitive member and the temperature-sensitive member are arranged at positions where they do not overlap in a plan view. This is because it is possible to suppress malfunction due to the change in the electrical resistance of the sensor member affecting the thin film transistor.

2. 2. Common electrode The common electrode in the present disclosure is a member that is electrically connected to the TFT and the sensor member. Further, the common electrode has a first common electrode electrically connected to the TFT and the pressure sensitive member, and a second common electrode electrically connected to the TFT and the temperature sensitive member.

(1) Arrangement of common electrodes In the present disclosure, the arrangement of the first common electrode and the second common electrode is such that the first common electrode is connected to the pressure sensitive member and the second common electrode is connected to the temperature sensitive member. If possible, there is no particular limitation. For example, both the first common electrode and the second common electrode may be arranged on the side opposite to the substrate side of the sensor member, or may be arranged on the substrate side. Further, for example, of the first common electrode and the second common electrode, even if the first common electrode is arranged on the side opposite to the substrate side of the sensor member and the second common electrode is arranged on the substrate side of the sensor member. good. Further, for example, of the first common electrode and the second common electrode, even if the first common electrode is arranged on the substrate side of the sensor member and the second common electrode is arranged on the side opposite to the substrate side of the sensor member. good.

In the present disclosure, it is preferable that one of the first common electrode and the second common electrode is arranged on the side opposite to the substrate side of the sensor member and the other is arranged on the substrate side of the sensor member. This is because it is easy to arrange the first common electrode and the second common electrode according to the arrangement of the temperature-sensitive member and the pressure-sensitive member.
In the present disclosure, it is particularly preferable that the first common electrode is arranged on the side opposite to the substrate side of the sensor member, and the second common electrode is arranged on the substrate side of the sensor member. As described above, the pressure sensitive member tends to change the electric resistance in the thickness direction of the TFT, and the temperature sensitive member tends to change the electric resistance in the surface direction of the TFT. Therefore, the first common electrode and the second common electrode can be arranged in a manner suitable for the characteristics of the sensor member, that is, the pressure-sensitive member and the temperature-sensitive member.

(2) First common electrode The first common electrode is a member electrically connected to the TFT and the pressure sensitive member. Further, the first common electrode is usually a member that is not electrically connected to the temperature-sensitive member and the TFT connected to the temperature-sensitive member. As described in the section "(1) Arrangement of common electrodes" described above, the first common electrode may be arranged on the side opposite to the substrate side of the sensor member, or may be arranged on the substrate side of the sensor member. Is also good. That is, the first common electrode may be arranged on the side opposite to the substrate side of the pressure sensitive member, or may be arranged on the substrate side of the pressure sensitive member. In the present disclosure, the former is more preferable. This is because the pressure sensor unit can detect the pressure with better sensitivity.

The plan-view shape of the first common electrode is not particularly limited, and can be appropriately selected depending on the arrangement of the first common electrode.
For example, when the first common electrode is arranged on the side opposite to the substrate side of the sensor member, the plan view shape of the first common electrode may be, for example, a line shape such as a linear shape or a strip shape. When the plan view shape of the first common electrode is a line shape, the first common electrode can be arranged along the line direction of the first wiring or the second wiring. Further, the plan view shape of the first common electrode may be, for example, a solid shape (one electrode shape that overlaps all TFTs in a plan view). Above all, the plan view shape of the first common electrode is preferably a solid shape. For example, since a substrate and a substrate with a metal layer having a metal layer can be used as the first common electrode, the first common electrode can be easily arranged without aligning with individual TFTs and pressure-sensitive members. Because it can be done.
On the other hand, for example, when the first common electrode is arranged on the substrate side of the sensor member, the plan view shape of the first common electrode is preferably a line shape such as a linear shape or a strip shape. When the plan view shape of the first common electrode is a line shape, the first common electrode can be arranged along the line direction of the first wiring or the second wiring. Further, since the first common electrode can be formed at the same time as either the first wiring or the second wiring, the manufacturing process can be reduced and the cost can be suppressed.
When the first common electrode has a line-shaped plan view shape, for example, it may have a connecting portion for increasing the area of the connecting portion with the sensor member. The first common electrode may have, for example, an external connection unit for connecting to the control unit described in "B. Sensor system" described later.

When the first common electrode is arranged on the substrate side of the sensor member, the TFT and the first common electrode may be arranged in the same pattern in a plan view. The form, arrangement, and effect of each TFT and the first common electrode when "the TFT and the first common electrode are arranged in the same pattern in a plan view" will be described in "TFT and the second common electrode" described later. The description here is the same as that described in the section on the morphology, arrangement, and effects of each TFT and the second common electrode when the common electrodes are arranged in the same pattern in plan view. Omit.

The material used for the first common electrode is not particularly limited as long as it is a conductive material, and for example, a conductive material generally used for a TFT can be used. Specific conductive materials include, for example, inorganic materials such as Ta, Ti, Al, Zr, Cr, Nb, Hf, Mo, Au, Ag, Pt, Mo-Ta alloy, W-Mo alloy, ITO, and IZO. , And conductive organic materials such as PEDOT / PSS.

The thickness of the first common electrode can be appropriately selected depending on the type of conductive material, the application of the sensor sheet, and the like. Further, when the common electrode is formed in a line shape, the line width of the common electrode can be appropriately adjusted.

Further, as the first common electrode, for example, a substrate with a metal layer having a support substrate and a conductive material layer can be used. Since the support substrate can be the same as the substrate used in "7. Substrate" described later, the description thereof is omitted here.

The method for forming the first common electrode is not particularly limited as long as it can form a common electrode having a desired shape, and examples thereof include the method of arranging the above-mentioned substrate with a metal layer. Further, when the first common electrode is arranged on the substrate side of the pressure sensitive member, a method of forming the first common electrode at the same time as the gate electrode or the source electrode and the drain electrode in the TFT described later can be mentioned. Above all, as a method for forming the first common electrode, a method of arranging a substrate with a metal layer is preferable.

(3) Second common electrode The second common electrode is a member electrically connected to the TFT and the temperature sensitive member. Further, the second common electrode is usually a member that is not electrically connected to the pressure-sensitive member and the TFT connected to the pressure-sensitive member. As described in the section "(1) Arrangement of common electrodes" described above, the second common electrode may be arranged on the side opposite to the substrate side of the sensor member, or may be arranged on the substrate side of the sensor member. Is also good. That is, the second common electrode may be arranged on the side opposite to the substrate side of the temperature sensitive member, or may be arranged on the substrate side of the temperature sensitive member. In the present disclosure, the latter is more preferable. This is because the temperature sensor unit can detect the temperature with better sensitivity.

In the present disclosure, it is preferable that the TFT and the second common electrode are arranged in the same pattern in a plan view. Here, "the TFTs and the second common electrode are arranged in the same pattern in the plan view" means that the shapes of the plurality of TFTs in the plan view are the same in the sensor sheet, and the size of each TFT is the first. A plurality of TFTs are arranged so that the error between the TFTs in the line direction of one wiring and the distance between the TFTs in the second wiring is within the range of ± 10%, and the planes of the plurality of second common electrodes are arranged. The visual shape is the same, and the error in the line width of the second common electrode, the line direction of the first wiring, or the distance between the second common electrodes in the line direction of the second wiring is within ± 10%. It means that a plurality of second common electrodes are arranged.
Since the first electrode, the first wiring, and the second common electrode in the TFT, or the second electrode, the second wiring, and the second common electrode in the TFT can be formed at the same time, the manufacturing process can be simplified. Further, in the present disclosure, the pressure-sensitive member and the temperature-sensitive member, which are sensor members, are arranged adjacent to each other on the side opposite to the substrate side of the TFT. Therefore, even if the TFT and the second common electrode are arranged in the same pattern in plan view, the pressure-sensitive member and the temperature-sensitive member can be measured by designing the design of the second insulating layer (position of the contact hole) in the TFT described later. The arrangement of the members can be appropriately selected, and the number and density of the pressure sensor unit and the temperature sensor unit can be adjusted.

In the present disclosure, the case where "the TFT and the second common electrode are arranged in the same pattern in a plan view" will be described with reference to the drawings. 5 (a), 5 (c) and 6 (a) are schematic plan views showing an example of the TFT and the second common electrode in the present disclosure, and FIGS. 5 (f) and 6 (b) are the present disclosure. FIG. 5 (b) is a schematic plan view showing another example of the sensor sheet, FIG. 5 (b) is a sectional view taken along line AA of FIG. 5 (a), and FIGS. 5 (d) and 5 (e) are shown in FIG. 5 (c). AA line sectional view and BB line sectional view, FIGS. 5 (g) and 5 (h) are AA line sectional view and BB line sectional view of FIG. 5 (f). In FIGS. 5 (a) to 5 (e), FIGS. 6 (a) and 6 (b), the TFT 2 and the second common electrodes 42a to 42c are arranged on the substrate in the same pattern in a plan view. In this example, for example, as shown in FIGS. 5 (c) to 5 (e), the design of the second insulating layer (passivation layer 26) in the TFT 2 is overlapped with the third electrode 24 of each TFT 2 in a plan view. The contact hole h is designed to be arranged at a position where it overlaps with the connecting portion of the second common electrodes 42a, 42b, 42c intersecting with the second wiring 6b in a plan view. By designing the second insulating layer (passivation layer 26) to the above-mentioned design, in the sensor sheets 10 shown in FIGS. 5 (f) to 5 (h), the TFT 2 connected to the second wirings 6a and 6c feels good. The pressure sensitive member 31 and the temperature sensitive member 32 can be arranged so that the temperature sensitive member 32 is connected to the TFT 2 to which the pressure member 31 is connected and connected to the second wiring 6b.
On the other hand, for example, as shown in FIG. 6A, the design of the second insulating layer (passivation layer) in the TFT 2 is arranged at a position where it overlaps with the third electrode of each TFT in a plan view, and the second wirings 6a and 6c. The contact hole h is designed to be arranged at a position where it overlaps with the connecting portions of the intersecting second common electrodes 42a, 42b, and 42c in a plan view. By designing the second insulating layer (passivation layer) to the above-mentioned design, in the sensor sheet shown in FIG. 6B, the pressure sensitive member 31 is connected to the TFT 2 connected to the second wiring 6b. The pressure sensitive member 31 and the temperature sensitive member 32 can be arranged so that the temperature sensitive member 32 is connected to the TFT 2 connected to the second wirings 6a and 6c.

Regarding the plan view shape, material, thickness, forming method, etc. of the second common electrode, the plan view shape, material, thickness, etc. of the first common electrode described in the above-mentioned "(2) First common electrode" section. Since the contents can be the same as those of the forming method and the like, the description here is omitted.

(3) Sensor Insulation Layer In the present disclosure, one of the first common electrode and the second common electrode is arranged on the side opposite to the substrate side of the sensor member, and the other is arranged on the substrate side of the sensor member. Usually, a sensor insulating layer that electrically insulates the first common electrode and the second common electrode is further arranged. The sensor insulating layer is a member that electrically insulates the first common electrode and the second common electrode, and more specifically, the pressure sensitive member and the second common electrode, and the temperature sensitive member and the first common electrode. Is a member that electrically insulates.

The sensor insulating layer is not particularly limited as long as it can electrically insulate between the pressure sensitive member and the second common electrode and between the temperature sensitive member and the first common electrode. For example, as shown in FIGS. 1 (b) and 1 (c), the sensor insulating layer 7 is arranged on the side of the sensor member 3 opposite to the substrate 1 side, and is arranged so as to cover the temperature sensitive member 32. A configuration having a contact hole at a position where it overlaps with the pressure member 31 in a plan view can be mentioned.
Since the sensor insulating layer has the above configuration, the pressure sensitive member can be arranged so as to electrically connect the TFT and the first common electrode in the thickness direction of the TFT, and the TFT and the second common electrode can be arranged in the plane direction of the TFT. This is because the temperature sensitive member can be arranged so as to electrically connect the common electrodes.

The material used for the sensor insulating layer is not particularly limited as long as it can have a desired insulating property. As an example of the material used for the sensor insulating layer, parerin can be mentioned. Further, as another example of the material used for the sensor insulating layer, fluororesin can be mentioned.

The thickness of the sensor insulating layer is not particularly limited as long as it can impart desired insulating properties, and can be appropriately selected depending on the material of the sensor insulating layer, the sensitivity required for the pressure sensor unit and the temperature sensor unit. .. The thickness of the sensor insulating layer is, for example, preferably 0.1 μm or more, particularly preferably 1 μm or more, particularly 10 μm or more. The thickness of the sensor insulating layer is, for example, preferably 100 μm or less, particularly preferably 50 μm or less, particularly 20 μm or less.
When the sensor insulating layer covers the temperature-sensitive member, it is preferable that the minimum value of the distance from the surface of the sensor insulating layer on the pressure-sensitive material side to the surface on the opposite side is included in the above numerical range.

As a method for forming the sensor insulating layer, a desired insulating property and material and a form of the sensor insulating layer can be appropriately selected, and a known method for producing an insulating layer can be used. As an example, a sensor insulating layer that covers a temperature-sensitive member by covering a pressure-sensitive sensor unit, a take-out electrode described later, and other parts requiring exposure with a protective tape, depositing parerin, and then peeling off the protective tape. Can be formed.
The vapor deposition of parerin is typically performed using a dedicated vacuum deposition apparatus. Specifically, the solid granular raw material of dimer dipara-xylene is heated by vacuum to vaporize it. The vaporized dimer gas is thermally decomposed, and the dimer is cleaved into a para-xylene state which is a monomer. Next, a polymer poly (para-xylene) is formed by polymerizing the gas of the above-mentioned monomer on the surface of the substrate in a vapor deposition chamber at room temperature of, for example, about 25 ° C.

Further, as another example of the method for forming the sensor insulating layer, for example, a method of applying a solution of a fluororesin dissolved in a fluorine solvent so as to cover the pressure-sensitive member by using a discharge method such as a dispenser can be mentioned. Can be done.

3. 3. TFT, 1st Wiring and 2nd Wiring The TFT in the present disclosure is a member arranged on a substrate and functions as a transistor. The structure of the TFT is not particularly limited, but typically includes a first electrode, a first insulating layer, a second electrode, a third electrode, and a semiconductor layer. Further, the first electrode is connected to the first wiring, and the second electrode is connected to the second wiring. Also, the semiconductor layer is typically arranged between the second and third electrodes. Hereinafter, the first electrode, the second electrode, and the third electrode in the TFT may be collectively referred to as each electrode in the TFT.
The TFT in the present disclosure is preferably driven by an active matrix method.

In the present disclosure, a plurality of TFTs are usually arranged at a plurality of intersections of the plurality of first wirings and the plurality of second wirings intersecting the first wirings, respectively. The plurality of TFTs are arranged in a matrix. Further, in the present disclosure, at least one of the plurality of TFTs, one of the adjacent TFTs is electrically connected to the pressure sensitive member, and the other is connected to the temperature sensitive member.
The “adjacent TFT” refers to a TFT adjacent to the first wiring side or the second wiring side among a plurality of TFTs arranged at the intersection of the first wiring and the second wiring.

In the present disclosure, the first electrode, the second electrode, and the third electrode in one TFT are electrically connected to one first wiring and one second wiring. Here, one TFT, one first wiring, and one second wiring refer to the TFT, the first wiring, and the second wiring arranged so as to specify one region in the sensor sheet of the present disclosure. Say. In other words, in the present disclosure, if one region can be specified in the sensor sheet, each electrode, one first wiring and one second wiring in one TFT are apparently arranged in one region. However, it may be apparently divided into a plurality of areas and arranged.

The case where each electrode, one first wiring, and one second wiring in one TFT are apparently arranged in one region will be described with reference to the drawings. In the sensor sheet 10 shown in FIG. 1A, for example, the area X is connected to the first wiring 5a, the second wiring 6c, and the first wiring 5a and the second wiring 6c which are apparently arranged in one area. It can be specified by the TFT 2 provided. Further, in FIG. 1A, the first electrode, the second electrode, and the third electrode of the TFT 2 are apparently arranged in one region.

A case where one TFT, one first wiring, and one second wiring are apparently divided into a plurality of regions will be described with reference to the drawings.
7 (a) is a schematic plan view showing an example of the sensor sheet of the present disclosure, FIG. 7 (b) is an enlarged view of the region X1 of FIG. 7 (a), and FIG. 7 (c) is FIG. 7 (b). 7 (d) is an enlarged view of the region X2 of FIG. 7 (a), and FIG. 7 (e) is a sectional view taken along line BB of FIG. 7 (d). In the sensor sheet shown in FIG. 7A, for example, the region X1 can be identified by the first wiring 5a, the second wiring 6c, and the TFT 2 connected to the first wiring 5a and the second wiring 6c. .. Further, the region X2 can be specified by the first wiring 5a and the TFT 2 connected to the first wiring 5a and the second wiring 6b. The first wiring 5a, the second wiring 6b, and 6c are apparently arranged in a plurality of regions (apparently two), but for example, by electrically connecting them at the end portion, one first wiring is provided. Configure the wiring and the second wiring. Further, in FIGS. 7A, 7B, and 7D, an example in which the first electrode, the second electrode, and the third electrode are divided into eight regions Xa to Xh in one TFT2. Is shown. Further, the second electrode and the third electrode are arranged so as to be further divided into two regions in each region Xa to Xh. The first electrode, each second electrode, and each third electrode arranged in the eight regions Xa to Xh are electrically connected and function as one TFT 2. In FIGS. 7A, 7B, and 7D, for the sake of simplicity, the substrate and the first common electrode are omitted, and the first wiring 5a (5), the first electrode in the TFT, and the first electrode are omitted. The common electrode 42 is shown by a broken line.

When one TFT, one first wiring, and one second wiring are apparently divided into a plurality of regions, for example, when electrodes, wirings, etc. are broken in some regions. However, the function as a TFT can be ensured by other regions. Specifically, in FIG. 7B, even when the electrodes, wiring, etc. are broken in a part of the regions X1a, the function as a TFT can be ensured in the other regions X1b to X1h.
In particular, in the case of a large sensor sheet, it may be difficult to form a large TFT. By arranging the gate electrode, the source electrode, and the drain electrode corresponding to one TFT in a plurality of regions in a plan view, it is easy to form and the reliability can be improved.

(1) TFT
The TFT in the present disclosure typically has at least a first electrode, a first insulating layer, a second electrode, a third electrode and a semiconductor layer. Hereinafter, regarding the details of the structure of the TFT, the first electrode is the gate electrode, the first insulating layer is the gate insulating layer, the second electrode is the source electrode, the third electrode is the drain electrode, and the first wiring. Is the scan wiring, and the case where the second wiring is the data wiring will be described.

(A) Structure of TFT The structure of the TFT may be a bottom gate type in which a substrate, a gate electrode, a gate insulating layer, and a source electrode and a drain electrode are arranged in this order, and the substrate, the source electrode, and the TFT structure may be used. A top gate type in which the drain electrode, the gate insulating layer, and the gate electrode are arranged in this order may be used.

(B) Gate Electrode, Source Electrode and Drain Electrode The source electrode and drain electrode in the present disclosure are members formed via the gate electrode and the gate insulating layer. Hereinafter, the gate electrode, the source electrode, and the drain electrode may be abbreviated as electrodes.

The plan-view shapes of the gate electrode, the source electrode, and the drain electrode can be appropriately selected depending on the application, size, and the like of the sensor sheet, and can be the same as the pattern used for a general TFT substrate.

The material constituting the gate electrode, the source electrode, and the drain electrode is not particularly limited as long as it is a member having a desired conductivity, and a conductive material generally used for a TFT can be used. Specific conductive materials include, for example, inorganic materials such as Ta, Ti, Al, Zr, Cr, Nb, Hf, Mo, Au, Ag, Pt, Mo-Ta alloy, W-Mo alloy, ITO, and IZO. , And conductive organic materials such as PEDOT / PSS.

Further, the gate electrode, the source electrode and the drain electrode may be made of different materials, or all of them may be made of the same material, but usually the source electrode and the drain electrode are made of the same material. .. Further, the gate electrode, the source electrode and the drain electrode may be made of the same material as the electrically connected data wiring, scan wiring and common electrode, respectively, or may be made of different materials. Usually, the gate electrode, the source electrode and the drain electrode are made of the same material as the electrically connected data wiring, scan wiring and common electrode, respectively.

The thickness of the electrode in the present disclosure is not particularly limited as long as it can be an electrode having desired electrode characteristics, but it is preferably 50 nm or more and 500 nm or less, respectively.

The width of the electrode is not particularly limited as long as it can be an electrode having desired electrode characteristics, and is appropriately set according to the application of the electronic device of the present disclosure and the like.

The method for forming the electrode is not particularly limited as long as it is possible to form the electrode so as to have the desired electrode characteristics, pattern shape, and thickness, and is the same as a general electrode forming method. be able to. Specifically, a metal mask is used to directly form a pattern by a vapor deposition method, a sputtering method, or the like, or a conductive material film is formed by a vapor deposition method, a sputtering method, or the like, and the conductive material film is formed on the conductive material film. Examples thereof include a method in which the photosensitive resin layer is patterned by a photolithography method and then etched to form a pattern, a method in which a printing method is used, and the like.

(C) Semiconductor layer The semiconductor layer in the present disclosure is a member arranged between the source electrode and the drain electrode.

The material constituting the semiconductor layer is not particularly limited as long as it exhibits desired switching characteristics, and for example, silicon, an oxide semiconductor, or an organic semiconductor can be used. Above all, it is preferable that it is an organic semiconductor, that is, the semiconductor layer is an organic semiconductor layer. This is because the pressure sensor unit in the sensor sheet of the present disclosure can suppress the problem of being damaged by the applied pressure, and can be made highly reliable.

Examples of the organic semiconductor include π-electron conjugated aromatic compounds, chain compounds, organic pigments, and organic silicon compounds. More specifically, pentacene, tetracene, thiophene oligoma derivative, phenylene derivative, phthalocyanine compound, polyacetylene derivative, polythiophene derivative, cyanine pigment and the like can be mentioned.
As silicon, polysilicon and amorphous silicon can be used.
Examples of the oxide semiconductor include zinc oxide (ZnO), titanium oxide (TIO), magnesium oxide zinc (MgxZn1-xO), cadmium oxide zinc (CdxZn1-xO), cadmium oxide (CdO), and indium oxide (In ₂ O). ₃ ), gallium oxide (Ga ₂ O ₃ ), tin oxide (SnO ₂ ), magnesium oxide (MgO), tungsten oxide (WO), InGaZnO series, InGaSnO series, InGaZnmMGO series, InAlZNO series, InFeZnO series, InGaO series, ZnGaO A system or InZNO system can be used.

The thickness of the semiconductor layer is not particularly limited as long as it can exhibit desired switching characteristics, and varies depending on the type of material constituting the semiconductor layer and the like. For example, a semiconductor. When the layer is an organic semiconductor layer, it can be 1 nm or more and 1000 nm or less. The thickness of the semiconductor layer means the maximum distance from the surface of the semiconductor layer on the substrate side to the surface of the semiconductor layer on the opposite side of the substrate.

The method for forming the semiconductor layer can be the same as the general method for forming the semiconductor layer, and differs depending on the type of material constituting the semiconductor layer and the like. For example, the semiconductor layer is an organic semiconductor layer. In this case, various printing methods such as an inkjet printing method, a gravure printing method, a screen printing method, and a flexo printing method can be mentioned.

(D) Gate Insulating Layer The gate insulating layer in the present disclosure is formed between a gate electrode and a source electrode, a drain electrode, and a semiconductor layer.

The material constituting the gate insulating layer is not particularly limited as long as it has a desired insulating property, and can be the same as a general method for forming a semiconductor layer. Specifically, insulating inorganic materials such as silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, barium strontium titanate (BST), lead zirconate titanate (PZT), and acrylic resins and phenolic resins. Examples thereof include insulating organic materials such as fluorine-based resin, epoxy-based resin, cardo-based resin, vinyl-based resin, imide-based resin, and novolac-based resin. Above all, it is preferable to use an insulating organic material. This is because the pressure sensor unit in the sensor sheet of the present disclosure can suppress the problem of being damaged by the applied pressure, and can be made highly reliable.

The thickness of the gate insulating layer may be as long as it can stably insulate between the gate electrode and the source electrode, etc., and is the same as the general semiconductor layer forming method. Can be done.

As a method for forming the gate insulating layer, a method used in a general method for manufacturing a TFT can be adopted, and the method is not particularly limited. For example, a method of depositing the above-mentioned insulating inorganic material can be mentioned. Further, for example, a coating liquid for a gate insulating layer containing the above-mentioned insulating organic material or its raw material is applied by a method such as spin coating, roll coating, or cast coating to form a film, and the above material is a photocurable resin. In the case of, a method of photocuring as necessary after irradiation with ultraviolet rays, and in the case of a thermosetting resin, a method of thermosetting as it is after film formation can be mentioned.

(E) TFT
The TFT in the present disclosure has a gate electrode, a gate insulating layer, a source electrode, a drain electrode, and a semiconductor layer, but may have other configurations if necessary. Specifically, it may have a second insulating layer arranged on the side opposite to the substrate side of the first insulating layer in the TFT. Specifically, when the TFT in the present disclosure has a bottom gate structure, the second insulating layer is formed so as to cover the semiconductor layer and prevents deterioration of the semiconductor layer due to the action of moisture and oxygen existing in the air. Examples thereof include a passivation layer formed on the substrate and an overcoat layer having a flat surface on the surface of the substrate on which the electrodes are formed. The second insulating layer may be arranged on the side opposite to the substrate side of the first insulating layer in the TFT, and may be one layer or a plurality of layers.

(I) Passivation layer The material constituting the passivation layer is not particularly limited as long as it does not easily permeate moisture and oxygen in the air and can prevent deterioration of the semiconductor layer to a desired degree.
For example, the insulating organic material described in the section "(d) Gate insulating layer" described above can be used.

The passivation layer preferably has a light-shielding property. This is because malfunction due to light incident on the semiconductor layer can be suppressed, and the switch characteristics of the TFT can be improved.

The thickness of the passivation layer is determined depending on the material and the like constituting the passivation layer, and can be, for example, 0.1 μm or more and 100 μm or less.

(Ii) Overcoat layer The overcoat layer forms a flat surface on the substrate. The material constituting the overcoat layer is not particularly limited as long as it can form a desired flat surface, but for example, the insulating organic matter described in the above-mentioned "(d) Gate insulating layer" section. Materials can be used.

The thickness of the overcoat layer may be any thickness as long as it can flatten the steps on the surface of the substrate, and can be, for example, 0.5 μm or more and 100 μm or less. As a method for forming the overcoat layer, for example, a coating liquid for forming an overcoat layer containing the above-mentioned material is applied by a method such as spin coating, roll coating, cast coating or the like to form a film, and the above material is photocured. In the case of a mold resin, a method of photocuring as necessary after irradiation with ultraviolet rays, and in the case of a thermosetting resin, a method of thermosetting as it is after film formation can be mentioned.

(2) Data wiring and scan lines The data wiring and scan lines in the present disclosure are arranged on a substrate and intersect with each other.

Examples of materials for data wiring and scan lines include metal materials such as Al, Cu, Ta, Mo, Ag and Au.

Examples of the data wiring and scan line forming method include a method of forming a metal layer on a substrate by a sputtering method, a vacuum vapor deposition method, a CVD method, or the like, and then etching the metal layer into a desired pattern. Be done. Another example is a method of depositing a metal material on a desired pattern using a mask.

Since the line widths of the data wiring and the scan line can be the same as the line widths of the general data wiring and the scan line, the description here is omitted. The data wiring and the scan wiring may have, for example, an external connection unit for connecting to the control unit described in "B. Sensor system" described later.

6. Sensor Electrodes In the sensor sheet of the present disclosure, sensor electrodes electrically connected to a TFT or a common electrode may be arranged. When the second insulating layer is arranged on the TFT, the sensor electrode is arranged on the sensor side of the second insulating layer and is connected to the third electrode or the common electrode in the TFT through the contact hole provided in the second insulating layer. Is placed in. For example, in FIGS. 1 (b) and 1 (c), the second insulating layer (passivation layer 26) is arranged on the TFT 2, and the second insulating layer (passivation layer 26) is arranged on the sensor member 3 side of the second insulating layer (passivation layer 26). An example is shown in which the second electrode 24 or the second common electrode 42 in the TFT 2 is arranged so as to come into contact with the contact hole provided in the (passivation layer 26).
The material used for the sensor electrode can be the same as the material described in the section of the common electrode described above. In addition, the thickness can be adjusted as appropriate.
The sensor electrode may be, for example, a pixel electrode.

7. Substrate The substrate in the present disclosure is a member that supports a TFT, a sensor member, and a common electrode.
As a material constituting the substrate, a substrate used for a general sensor sheet can be used. Examples of the material constituting the substrate include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polyimide (PI), polyetheretherketone (PEEK), polycarbonate (PC), and polyphenylene. Examples include sulfide (PPS) and polyetherimide (PEI).
The thickness of the substrate can be appropriately selected depending on the intended use of the sensor sheet, and is not particularly limited, but is preferably 50 μm or more and 1000 μm or less, for example.

8. Other Structures The sensor sheet of the present disclosure is not particularly limited as long as it has each of the above-mentioned configurations, and other members can be appropriately selected and added as needed. Examples of other members include a heat adjusting member and a heat interference member.

In the sensor sheet of the present disclosure, for example, as shown in FIG. 8, the temperature adjusting member 91 may be arranged on the side of the substrate 1 opposite to the sensor member 3. The temperature adjusting member is a member that keeps the temperature inside the sensor sheet constant, and is a member that suppresses the accumulation of heat inside the sensor sheet. Since the sensor sheet of the present disclosure has a temperature sensor unit that detects the temperature, heat may be accumulated inside the sensor sheet by repeatedly applying heat, and the sensitivity may decrease. By having the temperature adjusting member, after the applied heat is detected by the temperature sensor unit, the temperature of the sensor sheet can be adjusted to a constant temperature by the next detection. The temperature adjusting member is not particularly limited as long as the temperature of the sensor sheet can be kept constant, and examples thereof include a metal plate and a Peltier element. Further, the shape of the temperature adjusting member may be, for example, a plate shape. The temperature adjusted by the temperature adjusting member is preferably, for example, a reference temperature at the time of detection.

Further, in the sensor sheet of the present disclosure, as shown in FIG. 8, a thermal interference member 92 may be arranged between the temperature adjusting member 91 and the substrate 1 in the sensor sheet. The thermal interference member is a member that adjusts heat conduction inside the sensor sheet and between the temperature adjusting members.
In the present disclosure, the detection temperature, sensitivity, and speed required for the temperature sensor unit are appropriately selected according to the application of the sensor sheet. For example, when the detection speed is to be increased, that is, when the detection is to be performed quickly, the inside of the sensor sheet is used. And it is preferable to increase the heat conduction between the temperature control members. On the other hand, for example, when the temperature difference between the reference temperature and the detection temperature is small, and when it is desired to detect with high sensitivity, it is preferable to slow down the heat conduction inside the sensor sheet and between the temperature adjusting members. By using the heat interference member, the speed of heat conduction inside the sensor sheet and between the temperature adjusting members can be adjusted to a desired speed depending on the application of the sensor sheet. That is, by using the thermal interference member, the thermal conductivity inside the sensor sheet and between the temperature adjusting member can be adjusted.

Examples of the material used for the thermal interference member include general pressure-sensitive adhesives and resins used for adhesives. The thickness of the thermal interference member can be appropriately selected according to the application of the sensor sheet.

9. Other methods for manufacturing the sensor sheet of the present disclosure are not particularly limited as long as the above-mentioned members can be formed. The method for manufacturing the sensor sheet of the present disclosure includes, for example, a thin film transistor arrangement step of arranging a plurality of thin film transistors on a substrate and a sensor member member forming step of arranging a sensor member on the substrate on which the plurality of thin film transistors are arranged. In the sensor member forming step, a pressure-sensitive member and a temperature-sensitive member are used as sensor members, and the pressure-sensitive member and the temperature-sensitive member are arranged in a plan view. They are arranged so as to be adjacent to each other, and in the common electrode arrangement step, the first common electrode is arranged so as to electrically connect the thin film transistor and the pressure sensitive member, and the thin film transistor and the temperature sensitive member are electrically connected. As described above, a manufacturing method in which the second common electrode is arranged can be mentioned.
In the method for manufacturing the sensor sheet, for example, it is preferable that the thin film transistor and at least one of the first common electrode and the second common electrode are arranged in the same pattern in a plan view, and the thin film transistor and the second common electrode are arranged in a plane. It is more preferable to arrange them in the same pattern visually. In the present disclosure, for example, the number, density, and the like of the pressure-sensitive member and the temperature-sensitive member can be adjusted by appropriately selecting the design (position of the contact hole) of the second insulating layer in the thin film transistor. Therefore, it is possible to obtain a sensor sheet having a desired pressure sensor unit and temperature sensor unit without changing the pattern of the pressure-sensitive member and the thin film transistor corresponding to the temperature-sensitive member.
Since the method of forming each member has been described in each item, the description thereof is omitted here.

An example of the use of the sensor sheet of the present disclosure is to design sportswear, work clothes, etc. by installing it on the back side of clothes and measuring the pressure and temperature applied to human skin. Further, as another example of the use of the sensor sheet of the present disclosure, there is an application in which the wearable device worn on the arm or face is installed between the human skin to optimize the wearability of these devices. .. In addition, another example of the use of the sensor sheet of the present disclosure is an application that is installed inside an electronic device to optimize the thermal design and pressure design of the electronic device.
The use of the sensor sheet of the present disclosure is not limited to the above-mentioned use.

B. Sensor system The sensor system of the present disclosure is a sensor system that includes the sensor sheet described in "A. Sensor sheet" and a control unit, and the control unit is the first common electrode of the sensor sheet and the first common electrode. The feature is that the potential can be set independently for each of the two common electrodes.

According to the present disclosure, since the control unit can independently set the potentials for the first common electrode and the second common electrode of the sensor sheet described above, both pressure and heat can be detected with high sensitivity. It can be a sensor system.

The control unit will be described below.
The control unit in the present disclosure is a member capable of independently setting potentials for the first common electrode and the second common electrode of the sensor sheet. Further, the control unit usually independently controls the pressure sensor unit having the first common electrode, the pressure sensitive member and the TFT, and the temperature sensor unit having the second common electrode, the temperature sensitive member and the TFT.

The control unit only needs to be able to set potentials independently for the first common electrode and the second common electrode of the sensor sheet, and the potential applied to each common electrode depends on the sensitivity of the pressure sensitive member and the temperature sensitive member. It can be set as appropriate according to the situation. For example, the same potential may be applied to the first common electrode and the second common electrode, or different potentials may be applied.

The control unit uses, for example, the current value of the pressure sensor unit and the current value of the temperature sensor unit at the time of calibration as a reference, and compares the detected current value with the reference current value to convert it into a unit amount. It may be.

Further, the control unit may control, for example, so that the pressure detected in each pressure sensor unit becomes constant, and the temperature detected in each temperature sensor unit becomes constant.
In the present disclosure, since a plurality of pressure sensor units and temperature sensor units are provided, the pressure and current values applied to each pressure sensor unit may vary, and the individual temperatures may vary. The heat and current values applied to each sensor may vary.
Therefore, the control unit controls the pressure detected in each pressure sensor unit to be constant, and the temperature detected in each temperature sensor unit is controlled to be constant, so that the pressure and temperature are more sensitive. Can be detected.
As the control method by the control unit, for example, the following method can be used.
First, a calibration curve that measures the current value with respect to pressure is created for each pressure sensor unit, and a calibration curve that measures the current value with respect to temperature is created for each temperature sensor unit. Based on the obtained calibration curve data, the control unit controls the pressure detected in each pressure sensor unit to be constant, and controls the temperature detected in each temperature sensor unit to be constant. Can be done.

Since the configuration used for the control unit can be the same as the configuration used for a general sensor system, the description here will be omitted.
The control unit may be connected to, for example, the first wiring, the second wiring, the common electrode, and the like connected to the TFT by using a flexible printed circuit board (FPC).

The present disclosure is not limited to the above embodiment. The above embodiment is an example, and any object having substantially the same structure as the technical idea described in the claims of the present disclosure and exhibiting the same effect and effect is the present invention. Included in the technical scope of the disclosure.

Examples are shown below, and the present disclosure will be described in more detail.

[Example]
<Manufacturing of TFT>
A TFT having a top gate structure was produced by the following procedure.
A glass substrate was prepared as the substrate. Gold was vacuum-deposited on the entire surface of the substrate to a thickness of 40 nm to prepare a gold film. Next, a positive photoresist was applied to the gold film by spin coating to form a resist layer. Next, the resist layer was patterned through an exposure and development step using a photomask. Next, an etching treatment was performed to etch the gold film at the portion where the resist layer was not formed, and then the resist layer was removed. As a result, the source electrode, the drain electrode, and the data wiring were formed.

Next, the thiophene-based polymer was dissolved in xylene at a solid content concentration of 1% by mass to prepare a xylene solution of an organic semiconductor. The obtained xylene solution was added dropwise to the source electrode and the drain electrode using an inkjet method. As a result, an organic semiconductor layer was formed between the source electrode and the drain electrode.

Next, an ultraviolet photosensitive acrylic resin was spin-coated to form a coating film. Next, an exposure and alkali development step via a photomask was performed, and the coating film was patterned so that a contact hole of 30 μm × 30 μm was formed at a position where it overlapped with the drain electrode in a plan view. The patterned coating film was heat-cured in an oven at 150 ° C. As a result, a gate insulating layer having a thickness of 1 μm was formed.

Aluminum (Al) was sputter-deposited on the obtained gate insulating layer to a thickness of 200 nm to form an Al sputtered film. A positive photoresist was applied to the obtained Al sputtered film by spin coating to form a resist layer. An exposure and development process using a photomask was performed to pattern the resist layer. Next, an etching treatment was performed to etch the Al sputtered film at the portion where the resist layer was not formed, and then the resist layer was removed. As a result, a gate electrode, a scan electrode, and a line-shaped second common electrode were formed.

Next, an ultraviolet photosensitive acrylic resin was spin-coated to form a coating film. An exposure through a photomask and an alkali development step were performed to pattern the coating film. At this time, the coating film was patterned so that a contact hole of 30 μm × 30 μm was formed at a position where the drain electrode and the second common electrode overlap in the plan view. Next, the patterned coating film was heat-cured in an oven at 150 ° C. to form an overcoat layer having a thickness of 4 μm.
Through the above steps, a TFT having a top gate structure was produced.

<Manufacturing of sensor electrodes>
Next, silver paste was screen-printed on the overcoat layer to form a sensor electrode for connecting the sensor member and the TFT, or the sensor member and the second common electrode.
The size and plan view shape of the sensor electrode for the pressure-sensitive member were 100 μm square. Specifically, the sensor electrode 8 shown in FIG. 9A has a square shape with a distance S1 of 100 μm. Further, the sensor electrode for the pressure sensitive member was connected to the drain electrode.
On the other hand, as the sensor electrode for the temperature sensitive member, electrodes having a width of 400 μm in the long side direction are arranged facing each other with an interval of 50 μm, and one is connected to the drain electrode and the other is connected to the second common electrode. .. Specifically, the sensor electrode 8 shown in FIG. 9B has a T-shape having a distance T1 of 400 μm and a distance T2 of 50 μm, one of which is connected to the drain electrode 24 and the other of which is connected to the second common electrode 42. It was. 9 (a) and 9 (b) are diagrams for explaining the sensor electrode and the sensor member in the embodiment. Further, for ease of explanation, the sensor member 3 is indicated by a alternate long and short dash line, and an arrow indicates that the sensor electrode 8 and the drain electrode 24, or the sensor electrode 8 and the second common electrode 42 are connected.

<Manufacturing of pressure sensitive member>
Next, a paste in which 50% by mass of carbon particles were kneaded into a thermosetting silicone resin was printed by screen printing and heat-cured at 150 ° C. to form a pressure-sensitive member. The size and plan view shape of the pressure-sensitive member were 400 μm square. Specifically, the pressure-sensitive member 31 shown in FIG. 9A has a square shape with a distance S2 of 400 μm. The height of the pressure sensitive member was 100 μm.

<Manufacturing of temperature sensitive member>
Next, a paste obtained by kneading 10% by weight of carbon particles into a polymer (acrylic polymer) obtained by polymerizing octadecyl acrylate and butyl acrylate at a ratio of 1: 1 while heating at 80 ° C. was prepared. The prepared paste was printed on the TFT side (on the TFT substrate) of the substrate using a dispenser adjusted to a temperature of 80 ° C. to form a temperature-sensitive member. The size and plan view of the temperature sensitive member were circular with a diameter of 500 μm. Specifically, the temperature-sensitive member 32 shown in FIG. 9B has a circular shape with a distance S3 of 500 μm. The height of the temperature sensitive member was 50 μm.

<Manufacturing of sensor insulation layer>
Next, as a sensor insulating layer, a fluororesin was formed by dissolving it in a fluorine solvent so as to cover the temperature-sensitive member with a dispenser. The combined height of the temperature sensor and the fluororesin was 70 μm.

<Making the first common electrode>
A film in which aluminum (Al) was sputter-deposited at a thickness of 100 nm was prepared on a polyethylene naphthalate (PEN) substrate having a thickness of 100 μm. The above film was used as the first common electrode. Next, the first common electrode was arranged on the side of the sensor insulating layer opposite to the TFT side.
A sensor sheet was obtained by the above steps.

<Connection to control circuit>
Two common electrodes, gate wiring, and data wiring were connected to the control circuit via the FPC.

[Evaluation]
The obtained sensor sheet was placed on a Peltier temperature control stage. The output current value from the temperature sensor unit at each temperature was measured. Further, the obtained sensor sheet was sandwiched between a rubber balloon and a flat stage, and the output current value from the pressure sensor unit at each pressure was measured. These measurement results were used to correct the sensor sheet.

When pressing and applying temperature to the corrected sensor sheet, it was confirmed that both pressure and temperature were detected well.

1 ... Substrate 2 ... TFT (thin film transistor)
3 ... Sensor member 31 ... Pressure sensitive member 32 ... Temperature sensitive member 4 ... Common electrode 41 ... First common electrode 42 ... Second common electrode 10 ... Sensor sheet

Claims (5)

A sensor sheet in which a substrate, a plurality of thin film transistors, and a sensor member are laminated in this order and further has a common electrode.
The sensor member has a pressure-sensitive member and a temperature-sensitive member, and the pressure-sensitive member and the temperature-sensitive member are arranged adjacent to each other in a plan view.
The common electrode is characterized by having a first common electrode electrically connected to the thin film transistor and the pressure sensitive member, and a second common electrode electrically connected to the thin film transistor and the temperature sensitive member. Sensor sheet to do. The first common electrode is arranged on the side of the sensor member opposite to the substrate side.
The sensor sheet according to claim 1, wherein the second common electrode is arranged on the substrate side of the sensor member. The sensor sheet according to claim 1 or 2 , wherein a plurality of the second common electrodes are arranged, and the thin film transistor and the second common electrode are arranged in the same pattern in a plan view. The sensor sheet according to any one of claims 1 to 3, wherein the thin film transistor and the sensor member are arranged at positions where they do not overlap in a plan view. A sensor system comprising the sensor sheet according to any one of claims 1 to 4 and a control unit.
The control unit is a sensor system characterized in that potentials can be set independently for the first common electrode and the second common electrode of the sensor sheet.