JP6799956B2 - Display devices, display modules and electronic devices - Google Patents

Description

One aspect of the present invention relates to a display device, a driving method thereof, a display module, and an electronic device.

One aspect of the present invention is not limited to the above technical fields. The technical field of one aspect of the invention disclosed in the present specification and the like relates to a product, a method, or a manufacturing method. Alternatively, one aspect of the invention relates to a process, machine, manufacture, or composition (composition of matter). Therefore, the technical fields of one aspect of the present invention disclosed more specifically in the present specification and the like include semiconductor devices, display devices, light emitting devices, power storage devices, storage devices, their driving methods, or methods for manufacturing them. , Can be given as an example.

A liquid crystal display device that uses a light source that emits surface light as a backlight and is combined with a transmissive liquid crystal display device to achieve both reduction in power consumption and suppression of deterioration in display quality is known (see Patent Document 1). ..

Japanese Unexamined Patent Publication No. 2011-248351

One aspect of the present invention is to provide a display device that can be driven by a simple procedure and a method for driving the display device. Alternatively, one aspect of the present invention is to provide a display device having reduced power consumption and a method for driving the display device. One aspect of the present invention is to provide a display device capable of displaying a high-luminance image and a method for driving the display device. Alternatively, one aspect of the present invention is to provide a display device having high display quality and a method for driving the display device. Alternatively, one aspect of the present invention is to provide a novel display device and a driving method thereof, which are excellent in convenience or reliability. Alternatively, one aspect of the present invention is to provide a novel display device and a method for driving the display device.

The description of these issues does not prevent the existence of other issues. It should be noted that one aspect of the present invention does not need to solve all of these problems. Issues other than these are naturally clarified from the description of the description, drawings, claims, etc., and it is possible to extract issues other than these from the description of the description, drawings, claims, etc. Is.

One aspect of the present invention includes a first pixel and a first circuit, wherein the first pixel includes a first display area, a second display area, a third display area, and the like. A display having a fourth display area and a fifth display area, the first to fourth display areas have a display element having a light emitting layer, and the fifth display area has a liquid crystal layer. The fourth and fifth display regions have an element, the first circuit has a function of emitting white light, the first circuit has a function of generating the first display data, and the first circuit has a function of generating the first display data. The first circuit has a function of generating a second display data based on the first display data, and the first circuit has a function of generating a third display data based on the second display data. The first display data has information on the gradation of the brightness of the light emitted from the first display area, and the first display data is the gradation of the brightness of the light emitted from the second display area. The first display data has information on the gradation of the brightness of the light emitted from the third display area, and the second display data is emitted from the fourth display area. The third display data is a display device having information on the gradation of the brightness of the light and having information on the gradation of the brightness of the light emitted from the fifth display region.

Further, in the above aspect, the first display area has a function of emitting blue light, the second display area has a function of emitting green light, and the third display area is red. It may have a function of emitting light of.

Further, in the above aspect, the gradation of the brightness of the light emitted from the fourth display area is the gradation of the brightness of the light emitted from the first display area and the light emitted from the second display area. It may be calculated by the NTSC weighted averaging method based on the luminance gradation of the above and the luminance gradation of the light emitted from the third display region.

Further, in the above aspect, the gradation of the brightness of the light emitted from the fifth display region may be equal to the gradation of the brightness of the light emitted from the fourth display region.

Further, one aspect of the present invention includes a first pixel, a second pixel, a third pixel, and a first circuit, and the first pixel has a first display area and a first display area. It has a second display area, a third display area, and a fourth display area, and the second pixel has a fifth display area, a sixth display area, and a seventh display area. And an eighth display area, and the third pixel has a ninth display area, a tenth display area, an eleventh display area, and a twelfth display area. The first to third, fifth to seventh, and ninth to eleventh display regions have display elements having a light emitting layer, and the fourth, eighth, and twelfth display regions have a liquid crystal layer. It has a display element, the first to third display areas have a function of emitting light of different colors, and the fourth, fifth and ninth display areas are emitted by the first display area. It has a function of emitting light of the same color as the color light, and the sixth, eighth, and tenth display areas emit light of the same color as the light of the color emitted by the second display area. The seventh, eleventh, and twelfth display areas have a function of emitting light of the same color as the light of the color emitted by the third display area, and the first circuit has a first circuit. The first circuit has a function of generating the second display data based on the first display data, and the first display data is the first to the first display data. It has information on the gradation of the brightness of the light emitted from the third, fifth to seventh and ninth to eleventh display regions, and the second display data is the first display data possessed by the first display data. The second display data has information on the gradation of the brightness of the light emitted from the fourth display area, which is calculated based on the information on the gradation of the brightness of the light emitted from the display area of. , Regarding the gradation of the brightness of the light emitted from the eighth display area, which is calculated based on the information on the gradation of the brightness of the light emitted from the sixth display area of the first display data. The second display data has information, and the second display data is a twelfth display area calculated based on the information regarding the gradation of the brightness of the light emitted from the eleventh display area of the first display data. It is a display device having information on the gradation of the brightness of the light emitted from.

Further, in the above aspect, the first display area has a function of emitting blue light, the second display area has a function of emitting green light, and the third display area is red. It may have a function of emitting light of.

Further, in the above aspect, the luminance gradation of the light emitted from the fourth display region is equal to the luminance gradation of the light emitted from the first display region, and is emitted from the eighth display region. The gradation of the brightness of the light is equal to the gradation of the brightness of the light emitted from the sixth display area, and the gradation of the brightness of the light emitted from the twelfth display area is emitted from the eleventh display area. It may be equal to the gradation of the brightness of the light.

A display module having a display device according to an aspect of the present invention and a touch sensor is also an aspect of the present invention.

An electronic device having a display device according to an aspect of the present invention, or a display module according to an aspect of the present invention, and an operation key or a battery is also an aspect of the present invention.

One aspect of the present invention can provide a display device that can be driven by a simple procedure and a method for driving the display device. Alternatively, one aspect of the present invention can provide a display device with reduced power consumption and a method for driving the display device. One aspect of the present invention can provide a display device capable of displaying a high-luminance image and a driving method thereof. Alternatively, one aspect of the present invention can provide a display device having high display quality and a method for driving the display device. Alternatively, one aspect of the present invention can provide a novel display device and a driving method thereof, which are excellent in convenience or reliability. Alternatively, one aspect of the present invention can provide a novel display device and a method of driving the same.

The description of these effects does not preclude the existence of other effects. It should be noted that one aspect of the present invention does not necessarily have to have all of these effects. It should be noted that the effects other than these are naturally clarified from the description of the description, drawings, claims, etc., and it is possible to extract the effects other than these from the description of the description, drawings, claims, etc. Is.

A block diagram illustrating a display device. A circuit diagram illustrating a pixel. A timing chart that explains the operation of pixels. The top view explaining the display area of a display element. The top view explaining the display area of a display element. A flowchart illustrating the operation of the display device. A circuit diagram illustrating a pixel. The top view explaining the display area of a display element. The top view explaining the display area of a display element. The figure explaining the upper surface and cross section of the pixel which a display device has. The figure explaining the cross section of the pixel which a display device has. The figure explaining the upper surface and cross section of the pixel which a display device has. The figure explaining the cross section of the pixel which a display device has. The figure explaining the frame structure. A block diagram illustrating a gate driver. A timing chart that explains the operation of the gate driver. A block diagram illustrating a gate driver. A timing chart that explains the operation of the gate driver. The perspective view which shows an example of a touch panel. FIG. 5 is a cross-sectional view showing an example of a touch sensor. FIG. 5 is a cross-sectional view showing an example of a touch panel. FIG. 5 is a cross-sectional view showing an example of a touch panel. Block diagram and timing chart diagram of the touch sensor. The figure explaining the range of the atomic number ratio of the metal oxide film which concerns on this invention. Band diagram of the laminated structure of the metal oxide film. The figure explaining the display module. The figure explaining the electronic device. The perspective view explaining the display device. A photograph showing the display result of the display device. A photograph showing the display result of the display device.

Hereinafter, embodiments will be described with reference to the drawings. However, it is easily understood by those skilled in the art that the embodiments can be implemented in many different embodiments and that the embodiments and details can be variously modified without departing from the spirit and scope thereof. .. Therefore, the present invention is not construed as being limited to the description of the following embodiments.

Also, in the drawings, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. The drawings schematically show ideal examples, and are not limited to the shapes or values shown in the drawings.

In addition, the ordinal numbers "first", "second", and "third" used in the present specification are added to avoid confusion of the components, and are not limited numerically. I will add it.

Further, in the present specification, terms indicating the arrangement such as "above" and "below" are used for convenience in order to explain the positional relationship between the configurations with reference to the drawings. Further, the positional relationship between the configurations changes appropriately depending on the direction in which each configuration is depicted. Therefore, it is not limited to the words and phrases explained in the specification, and can be appropriately paraphrased according to the situation.

Further, in the present specification and the like, a transistor is an element having at least three terminals including a gate, a drain, and a source. Then, a channel region is provided between the drain (drain terminal, drain region or drain electrode) and the source (source terminal, source region or source electrode), and a current flows through the drain, the channel region and the source. Can be done. In the present specification and the like, the channel region means a region in which a current mainly flows.

Further, the functions of the source and the drain may be interchanged when transistors having different polarities are adopted or when the direction of the current changes in the circuit operation. Therefore, in the present specification and the like, the terms source and drain can be used interchangeably.

Further, in the present specification and the like, "electrically connected" includes a case where they are connected via "something having some kind of electrical action". Here, the "thing having some kind of electrical action" is not particularly limited as long as it enables the exchange of electric signals between the connection targets. For example, "things having some kind of electrical action" include electrodes, wirings, switching elements such as transistors, resistance elements, inductors, capacitors, and other elements having various functions.

Further, in the present specification and the like, the term "membrane" and the term "layer" can be interchanged with each other. For example, it may be possible to change the term "conductive layer" to the term "conductive layer". Alternatively, for example, it may be possible to change the term "insulating film" to the term "insulating layer".

In the present specification and the like, a metal oxide film (metal oxide) is a metal oxide in a broad expression. The metal oxide film is classified into an oxide insulating film, an oxide conductive film (including a transparent oxide conductive film), an oxide semiconductor film (also referred to as an oxide semiconductor or simply OS) and the like. For example, when a metal oxide film is used for the semiconductor layer of a transistor, the metal oxide film may be referred to as an oxide semiconductor film. That is, when the metal oxide film has at least one of an amplification action, a rectifying action, and a switching action, the metal oxide film can be referred to as a metal oxide semiconductor semiconductor, or OS for short. .. Further, when the term "OS FET" is used, it can be rephrased as a transistor having a metal oxide film or an oxide semiconductor film.

Further, in the present specification and the like, a metal oxide film having nitrogen may also be collectively referred to as a metal oxide film (metal oxide). Further, the metal oxide film having nitrogen may be referred to as a metal oxynitride.

Further, in the present specification and the like, it may be described as CAAC (c-axis aligned complementary) and CAC (cloud aligned complementary). In addition, CAAC represents an example of a crystal structure, and CAC represents an example of a function or a composition of a material.

Further, in the present specification and the like, the CAC-OS or the CAC-metal oxide has a conductive function in a part of the material and an insulating function in a part of the material, and the material as a whole has a semiconductor function. Has the function of. When CAC-OS or CAC-metal oxide is used for the semiconductor layer of a transistor, the conductive function is a function of flowing electrons (or holes) serving as carriers, and the insulating function is a function of flowing electrons (or holes) serving as carriers. It is a function that does not shed. By making the conductive function and the insulating function act in a complementary manner, a switching function (on / off function) can be imparted to the CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating each function, both functions can be maximized.

Further, in the present specification and the like, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. Further, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. Further, the conductive region and the insulating region may be unevenly distributed in the material. In addition, the conductive region may be observed with the periphery blurred and connected in a cloud shape.

Further, in the CAC-OS or CAC-metal oxide, when the conductive region and the insulating region are dispersed in the material in a size of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively. There is.

Further, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide is composed of a component having a wide gap due to an insulating region and a component having a narrow gap due to a conductive region. In the case of this configuration, when the carriers flow, the carriers mainly flow in the components having a narrow gap. Further, the component having a narrow gap acts complementarily to the component having a wide gap, and the carrier flows to the component having a wide gap in conjunction with the component having a narrow gap. Therefore, when the CAC-OS or CAC-metal oxide is used in the channel region of the transistor, a high current driving force, that is, a large on-current and a high field effect mobility can be obtained in the ON state of the transistor.

That is, the CAC-OS or CAC-metal oxide can also be referred to as a matrix composite (matrix composite) or a metal matrix composite (metal matrix composite).

(Embodiment 1)
In the present embodiment, the display device according to one aspect of the present invention and the method for manufacturing the display device will be described with reference to FIGS. 1 to 13.

<1-1. Display device configuration example>
First, a configuration example of the display device will be described with reference to FIG. The display device 500 shown in FIG. 1 includes a pixel unit 502, gate driver circuit units 504a and 504b arranged outside the pixel unit 502, and source driver circuit units 506a and 506b arranged outside the pixel unit 502. Has. The display device 500 shown in FIG. 1 has an arithmetic circuit unit 20 that is electrically connected to the source driver circuit units 506a and 506b. Further, the display device 500 shown in FIG. 1 is electrically connected to the gate driver circuit unit 504a via the wiring CL_L, and is electrically connected to the gate driver circuit unit 504b via the wiring CL_E. Has.

[Pixel part]
The pixel unit 502 has pixels 10 (X, Y) arranged in the X row (X is a natural number of 2 or more) and in the Y column (Y is a natural number of 2 or more). Further, the pixel 10 (X, Y) has two types of display elements, and the two types of display elements have different functions. One of the two types of display elements has, for example, a function of reflecting incident light, thereby having a function of displaying an image. The other of the two types of display elements has, for example, a function of emitting light, thereby having a function of displaying an image. For example, one of the two types of display elements has a liquid crystal layer, and the other of the two types of display elements has a light emitting layer. The details of the two types of display elements will be described later.

Although details will be described later, one pixel 10 (X, Y) has one of two types of display elements. On the other hand, one pixel 10 (X, Y) has a plurality of other of two types of display elements. For example, one pixel 10 (X, Y) has three or four other of the two types of display elements.

[Calculation circuit section]
It is desirable that a part or all of the arithmetic circuit unit 20, the control circuit unit 21, the gate driver circuit units 504a and 504b, and the source driver circuit units 506a and 506b are formed on the same substrate as the pixel unit 502. As a result, the number of parts and the number of terminals can be reduced. COG (Chip On) when a part or all of the arithmetic circuit unit 20, the control circuit unit 21, the gate driver circuit units 504a and 504b, and the source driver circuit units 506a and 506b are not formed on the same substrate as the pixel unit 502. A drive circuit board (for example, a drive circuit board formed of a single crystal semiconductor film or a polycrystalline semiconductor film) separately prepared may be formed on the display device 500 by Glass) or TAB (Tape Automated Bonding).

The arithmetic circuit unit 20 has digital data having information such as a gradation of the brightness of an image displayed by one of the two types of display elements and a gradation of the brightness of an image displayed by the other of the two types of display elements ( It has a function to generate display data). Of the display data generated by the arithmetic circuit unit 20, data having information about an image displayed by one of the two types of display elements can be transmitted to the source driver circuit unit 506a, and the other of the two types of display elements. Data having information about the image displayed by can be transmitted to the source driver circuit unit 506b.

In the present specification and the like, the gradation means the digital value when the brightness of the image displayed by each display element is represented by a digital value. For example, when the brightness of the image displayed by each display element is expressed in 256 steps, the lowest brightness is, for example, 0, and the highest brightness is, for example, 255. Even if the gradation is the same, the brightness of the displayed image may be different. For example, one of the two types of display elements and the other of the two types of display elements may have different brightness of the displayed image even if the gradation is the same.

As the arithmetic circuit unit 20, for example, a CPU (Central Processing Unit), a DSP (Digital Signal Processor) GPU (Graphics Processing Unit), or the like can be used. Further, these may be realized by PLD (Programmable Logic Device) such as FPGA (Field Programmable Gate Array) or FPAA (Field Programmable Analog Array).

[Source driver circuit section]
The source driver circuit units 506a and 506b perform D / A conversion of the display data transmitted from the arithmetic circuit unit 20 to generate an analog signal (data signal) for driving the display element of the pixel 10 (X, Y). Has the function of

The source driver circuit unit 506a has a function of generating a data signal to be written to the pixels 10 (X, Y) based on the display data, wiring (signal line SL_L [n], signal line SL_L [n + 1] and a signal to which the data signal is given. It has a function of controlling the potential of the line SL_L [Y]) or a function of supplying an initialization signal. The source driver circuit unit 506b has a function of generating a data signal to be written to the pixel 10 (X, Y) based on the display data, a wiring to which the data signal is given (signal line SL_E1 [n], signal line SL_E1 [n + 1], signal. It has a function of controlling the potential of the line SL_E1 [Y], the signal line SL_E2 [n], the signal line SL_E2 [n + 1], and the signal line SL_E2 [Y]), or a function of supplying an initialization signal. In the above, n represents a natural number less than or equal to Y.

However, the source driver circuit units 506a and 506b are not limited to the above functions, and may have a function of generating, controlling, or supplying another signal.

Further, the source driver circuit units 506a and 506b are configured by using a plurality of analog switches and the like. The source driver circuit units 506a and 506b output a signal generated by time-dividing the display data and performing D / A conversion by turning on a plurality of analog switches in sequence.

Although FIG. 1 illustrates a configuration in which two source driver circuit units are provided, the present invention is not limited to this, and one source driver circuit unit or three or more source driver circuit units may be provided. For example, only one source driver circuit unit is provided, and the signal line SL_L [n], signal line SL_L [n + 1], signal line SL_L [Y], signal line SL_E1 [n], and signal line SL_E1 [n] are provided by the source driver circuit unit. n + 1], signal line SL_E1 [Y], signal line SL_E2 [n], signal line SL_E2 [n + 1], and signal line SL_E2 [Y] may be controlled.

[Gate driver circuit section]
The gate driver circuit units 504a and 504b have a function of outputting a signal (scanning signal) for selecting the pixel 10 (X, Y).

Further, the gate driver circuit unit 504a has a function of controlling or initializing the potential of the wiring to which the scanning signal is given (hereinafter, scanning line GL_L [m], scanning line GL_L [m + 1], and scanning line GL_L [X]). It has a function of supplying a signal. Further, the gate driver circuit unit 504b includes wiring to which a scanning signal is given (hereinafter, scanning line GL_E1 [m], scanning line GL_E1 [m + 1], scanning line GL_E2 [m], scanning line GL_E2 [m + 1], scanning line GL_E1 [ It has a function of controlling the potential of the scanning line GL_E2 [X]) and a function of supplying an initialization signal. In the above, m represents a natural number of X or less.

However, the gate driver circuit units 504a and 504b are not limited to the above functions, and may have a function of controlling or supplying another signal.

In FIG. 1, two gate driver circuit units, a gate driver circuit unit 504a and a gate driver circuit unit 504b, are provided as the gate driver circuit unit, but the present invention is not limited to this, and one gate driver circuit unit or one gate driver circuit unit or A configuration may be configured in which three or more gate driver circuit units are provided.

[Control circuit section]
The control circuit unit 21 has a function of generating a clock signal. A clock signal is supplied to the gate driver circuit unit 504a via the wiring CL_L, and a clock signal is supplied to the gate driver circuit unit 504b via the wiring CL_E.

[Pixel]
Further, in the pixel 10 (X, Y), a pulse signal is input via one of the scanning line GL_L [m], the scanning line GL_L [m + 1], and the scanning line GL_L [X], and the signal line SL_L [n] , Signal line SL_L [n + 1], Signal line SL_L [Y], Signal line SL_E1 [n], Signal line SL_E1 [n + 1], Signal line SL_E1 [Y], Signal line SL_E2 [n], Signal line SL_E2 [n + 1], And a data signal is input via one of the signal lines SL_E2 [Y]).

For example, the pixel 10 (m, n) in the m-th row and n-th column receives a pulse signal from the gate driver circuit unit 504a via the scanning line GL_L [m], and signals according to the potential of the scanning line GL_L [m]. A data signal is input from the source driver circuit unit 506a via the line SL_L [n].

Further, for the pixel 10 (m, n) in the mth row and nth column, a pulse signal is input from the gate driver circuit unit 504b via the scanning line GL_E1 [m] and the scanning line GL_E2 [m], and the scanning line GL_E1 [m] is input. ] And the data signal is input from the source driver circuit unit 506b via the signal line SL_E1 [n] and the signal line SL_E2 [n] according to the potential of the scanning line GL_E2 [m].

Further, the pixel 10 (m, n) has two types of display elements as described above. The scanning line GL_L [m], the scanning line GL_L [m + 1], and the scanning line GL_L [X] are wirings that control the potential of one of the two types of display elements, and are the scanning line GL_E1 [m], the scanning line GL_E1 [m]. m + 1], scanning line GL_E1 [X], scanning line GL_E2 [m], scanning line GL_E2 [m + 1], and scanning line GL_E2 [X] are wirings that control the potential of the other of the two types of display elements.

Further, the signal lines SL_L [n], SL_L [n + 1], and SL_L [Y] are wirings that control the potential of the data signal given to one of the two types of display elements, and are the signal lines SL_E1 [n], SL_E1. [N + 1], SL_E1 [Y], signal line SL_E2 [n], SL_E2 [n + 1], and SL_E2 [Y] are wirings that control the potential of the data signal given to the other of the two types of display elements.

[External circuit]
An external circuit 508 is connected to the display device 500. The display device 500 may have an external circuit 508.

As shown in FIG. 1, the external circuit 508 is electrically connected to a wiring (hereinafter referred to as ANODE or wiring AONDE) to which an anode potential is given.

<1-2. Pixel circuit configuration>
Next, an example of a circuit configuration of pixel 10 (m, n), pixel 10 (m, n + 1), pixel 10 (m + 1, n) and pixel 10 (m + 1, n + 1) will be described with reference to FIG.

FIG. 2 is a circuit diagram illustrating an example of pixel 10 (m, n), pixel 10 (m, n + 1), pixel 10 (m + 1, n) and pixel 10 (m + 1, n + 1) included in the display device 500.

Pixels 10 (m, n) include scanning line GL_L [m], scanning line GL_E1 [m], scanning line GL_E2 [m], signal line SL_E1 [n], signal line SL_L [n], and signal line SL_E2 [n]. ]. Pixels 10 (m, n + 1) include scanning line GL_L [m], scanning line GL_E1 [m], scanning line GL_E2 [m], signal line SL_E1 [n + 1], signal line SL_L [n + 1], and signal line SL_E2 [n + 1]. ]. Pixels 10 (m + 1, n) include scanning line GL_L [m + 1], scanning line GL_E1 [m + 1], scanning line GL_E2 [m + 1], signal line SL_E1 [n], signal line SL_L [n], and signal line SL_E2 [n]. ]. Pixels 10 (m + 1, n + 1) include scanning line GL_L [m + 1], scanning line GL_E1 [m + 1], scanning line GL_E2 [m + 1], signal line SL_E1 [n + 1], signal line SL_L [n + 1], and signal line SL_E2 [n + 1]. ].

Further, the pixels 10 (m, n), the pixels 10 (m, n + 1), the pixels 10 (m + 1, n) and the pixels 10 (m + 1, n + 1) are the transistors MA1 to MA4, the transistors MA5, and the transistors MB1 to MB4, respectively. , A capacitance element Cs_L, a display element 12, and a display element 14. In FIG. 2, pixel 10 (m, n), pixel 10 (m, n + 1), pixel 10 (m + 1, n) and pixel 10 (m + 1, n + 1) each have one display element 12. It has four display elements 14 each (display element 14B, display element 14G, display element 14R, display element 14W). Further, in FIG. 2 and the like, the display element 12 included in the pixel 10 (m, n) is referred to as a display element 12B, the display element 12 included in the pixel 10 (m, n + 1) is referred to as a display element 12G, and the pixel 10 ( The display element 12 included in m + 1, n) is referred to as a display element 12R, and the display element 12 included in the pixel 10 (m + 1, n + 1) is referred to as a display element 12W.

The display element 12 corresponds to one of two types of display elements, and has a function of displaying an image by, for example, reflecting incident light. The display element 14 corresponds to the other of the two types of display elements, and has a function of displaying an image by emitting light, for example. For example, the display element 12 has a liquid crystal layer, and the display element 14 has a light emitting layer. The display element 14 has a function of emitting white light, for example.

The wiring TCOM in which the pixel 10 (m, n), the pixel 10 (m, n + 1), the pixel 10 (m + 1, n) and the pixel 10 (m + 1, n + 1) are electrically connected to the display element 12 and the display element 14, respectively. It has a wiring CSCOM that is electrically connected to the display element 12, and a wiring anode and a wiring CATHODE that are electrically connected to the display element 14.

The scanning line GL_L [m], the scanning line GL_L [m + 1], the signal line SL_L [n], the signal line SL_L [n + 1], the wiring CSCOM, and the wiring TCOM are wirings for driving the display element 12, respectively. Further, scanning line GL_E1 [m], scanning line GL_E1 [m + 1], scanning line GL_E2 [m], scanning line GL_E2 [m + 1], signal line SL_E1 [n], signal line SL_E1 [n + 1], signal line SL_E2 [n]. , Signal line SL_E2 [n + 1], wiring ANODE, wiring CATHODE, and wiring CSCOM are wirings for driving the display element 14, respectively.

The positional relationship between the display element 12B, the display element 12G, the display element 12R, and the pixel 10 having the display element 12W shown in FIG. 2 is merely an example, and any pixel 10 can be used as long as the object of one aspect of the present invention can be achieved. Can be provided with a display element 12B, a display element 12G, a display element 12R, and a display element 12W. For example, the display element 12R may be provided on the pixel 10 (m, n), and the display element 12B may be provided on the pixel 10 (m + 1, n).

<1-3. Configuration example of display element 12>
The display element 12 has a function of controlling light reflection or light transmission. In particular, it is preferable that the display element 12 is a so-called reflection type display element that controls the reflection of light. By making the display element 12 a reflective display element, it is possible to perform display using external light, so that the power consumption of the display device can be suppressed. For example, the display element 12 may have a configuration in which a reflective film, a liquid crystal element, and a polarizing plate are combined, or a configuration in which a micro-electromechanical system (MEMS) is used. The display element 12 may be a transmissive display element having no reflective film.

<1-4. Configuration example of display element 14>
The display element 14 has a function of emitting light, that is, a function of emitting light. Therefore, the display element 14 may be read as a light emitting element. For example, the display element 14 may be configured to use a self-luminous light emitting element such as an OLED (Organic Light Emitting Diode), an LED (Light Emitting Diode), a QLED (Quantum-dot Light Emitting Diode), or a semiconductor laser. Good.

As described above, in the display device of one aspect of the present invention, as shown in the display element 12 and the display element 14, display elements having different functions are used. For example, by using one of the display elements as a liquid crystal element and the other as an EL element, it is possible to provide a new display device having excellent convenience or reliability. Further, by using a liquid crystal element in an environment where the outside light is bright and using an EL element in an environment where the outside light is dark, it is possible to provide a display device having low power consumption and high display quality. ..

<1-5. Display element drive method>
Next, the driving method of the display element 12 and the display element 14 will be described with reference to FIGS. 2 and 3. In the following description, a liquid crystal element is used for the display element 12, and a light emitting element is used for the display element 14 (display element 14B, display element 14G, display element 14R, and display element 14W).

[Driving method of display element 12]
At pixel 10 (m, n), the gate electrode of transistor MA5 is electrically connected to scanning line GL_L [m]. Further, one of the source electrode and the drain electrode of the transistor MA5 is electrically connected to the signal line SL_L [n], and the other is electrically connected to one of the pair of electrodes of the display element 12. The transistor MA5 has a function of controlling data writing of a data signal by switching between an on state and an off state.

In the present specification and the like, turning on the transistor means applying a high potential to the gate of the transistor, and turning off the transistor means applying a low potential to the gate of the transistor. The low potential can be, for example, a ground potential.

Further, the other of the pair of electrodes of the display element 12 is electrically connected to the wiring TCOM.

Further, one of the pair of electrodes of the capacitive element Cs_L is electrically connected to the other of the source electrode or the drain electrode of the transistor MA5 and one of the pair of electrodes of the display element 12, and the other of the pair of electrodes of the capacitive element Cs_L. Is electrically connected to the wiring CSCOM. The capacitive element Cs_L has a function of holding the data written in the pixels 10 (m, n).

For example, the gate driver circuit unit 504a shown in FIG. 1 sequentially selects the pixels 10 (m, n) in each row, and the transistor MA5 is turned on to write the data of the data signal. The pixel 10 (m, n) to which the data is written is put into a holding state when the transistor MA5 is turned off. By doing this sequentially line by line, the image can be displayed.

[Driving method of display element 14]
At pixel 10 (m, n), the gate electrode of transistor MA1 is electrically connected to scanning line GL_E1 [m]. Further, one of the source electrode and the drain electrode of the transistor MA1 is electrically connected to the signal line SL_E1 [n], and the other is electrically connected to the gate electrode and the wiring TCOM of the transistor MB1. The transistor MA1 has a function of controlling data writing of a data signal by switching between an on state and an off state.

Further, one of the source electrode and the drain electrode of the transistor MB1 is electrically connected to one of the pair of electrodes of the display element 14B, and the other of the source electrode and the drain electrode of the transistor MB1 is electrically connected to the wiring anode. To. Further, the other of the pair of electrodes of the display element 14B is electrically connected to the wiring Cathode. The transistor MB1 has a function as a so-called drive transistor that controls the current applied to the display element 14B.

Further, a capacitive element is formed between the other of the source electrode and the drain electrode of the transistor MA1 and the wiring anode. The capacitive element has a function of holding data written in pixels 10 (m, n). Further, the transistor MB1 has a back gate electrode, and the back gate electrode is electrically connected to one of the source electrode and the drain electrode of the transistor MB1.

Further, in the pixel 10 (m, n), the gate electrode of the transistor MA2 is electrically connected to the scanning line GL_E2 [m]. Further, one of the source electrode and the drain electrode of the transistor MA2 is electrically connected to the signal line SL_E2 [n], and the other is electrically connected to the gate electrode and the wiring TCOM of the transistor MB2. The transistor MA2 has a function of controlling data writing of a data signal by switching between an on state and an off state.

Further, one of the source electrode and the drain electrode of the transistor MB2 is electrically connected to one of the pair of electrodes of the display element 14G, and the other of the source electrode and the drain electrode of the transistor MB2 is electrically connected to the wiring anode. To. The transistor MB2 has a function as a so-called drive transistor that controls the current applied to the display element 14G.

Further, a capacitive element is formed between the other of the source electrode and the drain electrode of the transistor MA2 and the wiring anode. The capacitive element has a function of holding data written in pixels 10 (m, n). Further, the transistor MB2 has a back gate electrode, and the back gate electrode is electrically connected to one of the source electrode and the drain electrode of the transistor MB2.

Further, in the pixel 10 (m, n), the gate electrode of the transistor MA3 is electrically connected to the scanning line GL_E1 [m]. Further, one of the source electrode and the drain electrode of the transistor MA3 is electrically connected to the signal line SL_E1 [n], and the other is electrically connected to the gate electrode and the wiring TCOM of the transistor MB3. The transistor MA3 has a function of controlling data writing of a data signal by switching between an on state and an off state.

Further, one of the source electrode and the drain electrode of the transistor MB3 is electrically connected to one of the pair of electrodes of the display element 14R, and the other of the source electrode and the drain electrode of the transistor MB3 is electrically connected to the wiring anode. To. The transistor MB3 has a function as a so-called drive transistor that controls the current applied to the display element 14R.

Further, a capacitive element is formed between the other of the source electrode and the drain electrode of the transistor MA3 and the wiring anode. The capacitive element has a function of holding data written in pixels 10 (m, n). Further, the transistor MB3 has a back gate electrode, and the back gate electrode is electrically connected to one of the source electrode and the drain electrode of the transistor MB2.

Further, in the pixel 10 (m, n), the gate electrode of the transistor MA4 is electrically connected to the scanning line GL_E1 [m]. Further, one of the source electrode and the drain electrode of the transistor MA4 is electrically connected to the signal line SL_E2 [n], and the other is electrically connected to the gate electrode and the wiring TCOM of the transistor MB4. The transistor MA4 has a function of controlling data writing of a data signal by switching between an on state and an off state.

Further, one of the source electrode and the drain electrode of the transistor MB4 is electrically connected to one of the pair of electrodes of the display element 14W, and the other of the source electrode and the drain electrode of the transistor MB4 is electrically connected to the wiring anode. To. The transistor MB4 has a function as a so-called drive transistor that controls the current applied to the display element 14W.

Further, a capacitive element is formed between the other of the source electrode and the drain electrode of the transistor MA4 and the wiring anode. The capacitive element has a function of holding data written in pixels 10 (m, n). Further, the transistor MB3 has a back gate electrode, and the back gate electrode is electrically connected to one of the source electrode and the drain electrode of the transistor MB4.

For example, the gate driver circuit unit 504b shown in FIG. 1 sequentially selects the pixels 10 (m, n) in each row, turns on the transistors MA1 to MA4, and writes the data of the data signal. The pixel 10 (m, n) to which the data is written is put into a holding state when the transistors MA1 to MA4 are turned off. Further, the amount of current flowing between the source electrode and the drain electrode of the transistor MB1 is controlled according to the potential of the written data signal, and the display element 14 emits light with brightness corresponding to the amount of flowing current. By doing this sequentially line by line, the image can be displayed.

As described above, in the display device of one aspect of the present invention, the two display elements can be controlled independently by using different transistors. Therefore, it is possible to provide a display device having high display quality.

Further, as shown in FIG. 2, the driving transistors (transistors MB1 to MB4) of the display element 14 have a back gate electrode, that is, the transistor has a plurality of gate electrodes, so that the reliability of the transistor is increased. Alternatively, the driving ability can be improved. For example, as shown in FIG. 2, the potential on the back channel side of the transistor can be fixed by connecting the back gate electrode to either the source electrode or the drain electrode. Further, although not shown in the drawings, the current drive capability of the transistor can be improved by connecting the back gate electrode to the gate electrode (also referred to as the first gate electrode or the front gate electrode).

Further, the transistors (transistors MA1 to MA5 and transistors MB1 to MB4) used in the display device of one aspect of the present invention preferably have a metal oxide film. A transistor having a metal oxide film can be driven at high speed because a relatively high field effect mobility can be obtained. Further, the off-current of the transistor having the metal oxide film is extremely small. Therefore, even if the refresh rate of the display device is lowered, the brightness of the display device can be maintained and the power consumption can be suppressed.

The display device 500 can perform gradation display using at least one of the display element 12 and the display element 14. For example, since the display element 12 is a liquid crystal element, visibility can be improved in an environment where the intensity of external light is strong. On the other hand, since the display element 14 is a so-called light emitting element, visibility can be improved in an environment where the intensity of external light is weak.

The display device 500 may perform gradation display using both the display element 12 and the display element 14. By performing gradation display using both the display element 12 and the display element 14, visibility can be improved as compared with the case where gradation display is performed using either the display element 12 or the display element 14. it can.

The display element of the pixel 10 (m, n + 1), the pixel 10 (m + 1, n) and the pixel 10 (m + 1, n + 1) can be driven by the same method as the display element of the pixel 10 (m, n). it can.

FIG. 3 is a timing chart showing the operation of each element of the pixel 10 (m, n). In the timing chart shown in FIG. 3, the potential of the wiring SL_L [n], the potential of the wiring SL_E1 [n], the potential of the wiring SL_E2 [n], the potential of the wiring GL_L [m], the potential of the wiring GL_E1 [m], and the potential of the wiring GL_E2 The potential of [m], the potential of the wiring CL_L, and the potential of the wiring CL_E are shown. Regarding the wiring SL_E1 [n], B indicates that the data corresponding to the image displayed by the display element 14B is written in the pixel 10 (m, n), and R indicates the image displayed by the display element 14R. It is shown that the data corresponding to is written in the pixel 10 (m, n). Further, regarding the wiring SL_E2 [n], G indicates that the data corresponding to the image displayed by the display element 14G is written in the pixel 10 (m, n), and W is the image displayed by the display element 14W. It is shown that the data corresponding to is written in the pixel 10 (m, n).

As shown in FIG. 3, during the period when the high potential is applied to the wiring GL_L [m], the high potential is also applied to the wiring GL_E1 [m] and the wiring GL_E2 [m]. That is, while the data corresponding to the image displayed by the display element 12 is written in the pixel 10 (m, n), not only the wiring GL_L [m] but also the wiring GL_E1 [m] and the wiring GL_E2 [m]. High potential is also applied to. As a result, it is possible to prevent the data corresponding to the image displayed by the display element 12 from affecting the image displayed by the display element 14. Thereby, the display quality of the image displayed by the display device of one aspect of the present invention can be improved.

<1-6. Display area of display element>
Next, the display areas of the display element 12 and the display element 14 in pixel 10 (m, n), pixel 10 (m, n + 1), pixel 10 (m + 1, n) and pixel 10 (m + 1, n + 1) are shown in FIG. This will be described with reference to FIG.

FIG. 4 is a top view illustrating a display area of pixel 10 (m, n), pixel 10 (m, n + 1), pixel 10 (m + 1, n) and pixel 10 (m + 1, n + 1).

Pixel 10 (m, n), pixel 10 (m, n + 1), pixel 10 (m + 1, n) and pixel 10 (m + 1, n + 1) have a display area 12d that functions as a display area of the display element 12. Further, the pixel 10 (m, n), the pixel 10 (m, n + 1), the pixel 10 (m + 1, n) and the pixel 10 (m + 1, n + 1) are displayed as a display area 14Bd that functions as a display area of the display element 14B. It has a display area 14Gd that functions as a display area of the element 14G, a display area 14Rd that functions as a display area of the display element 14R, and a display area 14Wd that functions as a display area of the display element 14W.

The display region 12d has a region that reflects incident light. For example, the display region 12d is provided with a conductive film having a function as a reflective electrode described later.

The display area 14Bd has a region for transmitting the light emitted by the display element 14B, the display area 14Gd has a region for transmitting the light emitted by the display element 14G, and the display area 14Rd has a region for transmitting the light emitted by the display element 14R. It has a transmitting region, and the display region 14Wd has a region that transmits the light emitted by the display element 14W.

A colored film that transmits light of a specific color can be provided in the display area 14Bd, the display area 14Gd, and the display area 14Rd. For example, a colored film that transmits blue light (wavelength 450 nm or more and less than 500 nm) can be provided in the display region 14Bd. For example, a colored film that transmits green light (wavelength 500 nm or more and less than 570 nm) can be provided in the display region 14 Gd. For example, a colored film that transmits red light (wavelength 620 nm or more and less than 750 nm) can be provided in the display region 14Rd.

As described above, the display area 14Bd has a function of emitting, for example, blue light, the display area 14Gd has a function of emitting, for example, green light, and the display area 14Rd has a function of emitting, for example, red light. No coloring film is provided in the display area 12d and the display area 14Wd. Therefore, the display region 12d has a function of emitting white light emitted by the display element 12. Further, the display area 14Wd has a function of emitting white light emitted by the display element 14W. In addition, for example, a region that emits light such as purple (380 nm or more and less than 450 nm), yellow (570 nm or more and less than 590 nm), or orange (590 nm or more and less than 620 nm) is defined as a display area 14Bd, a display area 14Gd, a display area 14Rd, and a display area 14Wd. It may be provided in place of any of the above, or may be provided in addition to the above display area.

In the top view for explaining the display area of the pixel 10 such as FIG. 4, the display area with the same hatching has a function of emitting light of the same color.

The case where the display element 14 has a function of emitting white light has been described. For example, the display element 14B has a function of emitting blue light, and the display element 14G has a function of emitting green light. The 14R may have a function of emitting red light, and the display element 14W may have a function of emitting white light. In this case, the display area 14Bd, the display area 14Gd, the display area 14Rd, and the display area 14Wd may not be provided with the coloring film.

In FIG. 4, the display region 12d is not provided with the colored layer, but a colored layer may be provided. For example, a colored film that transmits blue light can be provided in the display region 12d of the pixels 10 (m, n) in the same manner as the display region 14Bd. Further, in the display area 12d of the pixel 10 (m, n + 1), a colored film that transmits green light can be provided as in the display area 14Gd. Further, in the display area 12d of the pixel 10 (m + 1, n), a colored film that transmits red light can be provided as in the display area 14Rd. The schematic diagram explaining the display area of pixel 10 (m, n), pixel 10 (m, n + 1), pixel 10 (m + 1, n) and pixel 10 (m + 1, n + 1) in the above-described configuration is illustrated. Shown in 5.

In the present specification and the like, the display area 12d provided with the display element 12B may be referred to as a display area 12Bd. Further, the display area 12d provided with the display element 12G may be referred to as a display area 12Gd. Further, the display area 12d provided with the display element 12R may be referred to as a display area 12Rd. Further, the display area 12d provided with the display element 12W may be referred to as a display area 12Wd.

By configuring the pixels 10 as shown in FIG. 5, the display area 12Bd can have a function of emitting blue light in the same manner as the display area 14Bd. Further, the display area 12Gd can have a function of emitting green light in the same manner as the display area 14Gd. Further, the display area 12Rd can have a function of emitting red light in the same manner as the display area 14Rd. The display area 12Wd can have a function of emitting white light in the same manner as the display area 14Wd. Further, similarly to the display area 14Bd, the display area 14Gd, the display area 14Rd, and the display area 14Wd, the area that emits light such as purple, yellow, and orange is defined as the display area 12Bd, the display area 12Gd, the display area 12Rd, and the display area. It may be provided in place of any of 12 Wd, or may be provided in addition to the above display area.

When the pixel 10 has the configuration shown in FIG. 5, the display element 12 having a function of reflecting incident light expresses one color with one pixel 10. For example, pixel 10 (m, n) represents blue, pixel 10 (m, n + 1) represents green, pixel 10 (m + 1, n) represents red, and pixel 10 (m + 1, n + 1) represents white. To express. On the other hand, in the display element 14 having a function of emitting light, one pixel 10 expresses a plurality of colors (here, blue, green, red, and white). That is, all the pixels 10 can express blue, green, red and white. By configuring the pixels 10 as shown in FIG. 5, the display area 12Bd, the display area 12Gd, the display area 12Rd, and the display area 12Rd can be compared with the case where the display element 12 expresses a plurality of colors with one pixel 10 like the display element 14. The area of the display area 12 Wd can be increased. Therefore, the efficiency of extracting the light emitted by the display element 12 can be improved, and a high-luminance image can be displayed. Further, since the display element 12 only needs to express one color with one pixel 10, the display device 500 is more than the case where the display element 12 expresses a plurality of colors with one pixel 10 like the display element 14. The driving method of the above can be simplified. Therefore, the power consumption of the display device 500 can be reduced.

<1-7. Display element drive method>

Next, an example of the driving method of the display device 500 having the configuration shown in FIG. 1 will be described with reference to the flowcharts shown in FIGS. 6A and 6B.

One aspect of the present invention relates to a method of driving a display device 500 in which the number of colors represented by one pixel 10 by the display element 12 and the number of colors represented by one pixel 10 by the display element 14 are different. .. In the driving method of one aspect of the present invention, display data corresponding to the image displayed by the display element 12 is generated based on the display data corresponding to the image displayed by the display element 14. That is, it is not necessary to independently generate the display data corresponding to the image displayed by the display element 12 and the display data displayed by the display element 14. As a result, the driving method of the arithmetic circuit unit 20 can be simplified, and the power consumption of the display device 500 can be reduced.

FIG. 6A is a flowchart showing an example of a method of driving the display device 500 when the pixel 10 has the configuration shown in FIG. 4, that is, the display area 12d does not have a colored film. First, the arithmetic circuit unit 20 generates display data V1 having information on the gradation of the brightness of the image displayed by the display element 14B, the display element 14G, and the display element 14R. That is, display data V1 having information regarding the gradation of the brightness of the light emitted from the display area 14Bd, the display area 14Gd, and the display area 14Rd is generated (step S1).

In the present specification and the like, the gradation of the brightness of light emitted from the display area is emitted from the display area when the display element provided in the display area displays an image having the brightness of a predetermined gradation. It means the brightness of the light. For example, when the gradation of the brightness of the light emitted from the display area is 100, the gradation of the brightness of the image displayed by the display element provided in the display area is 100. Represents the brightness of the light emitted from.

Next, the arithmetic circuit unit 20 generates display data V2 having information on the gradation of the brightness of the image displayed by the display element 14W based on the display data V1 and the like. That is, display data V2 having information on the gradation of the brightness of the light emitted from the display area 14 Wd is generated (step S2).

The gradation of the brightness of the image displayed by the display element 14W, that is, the gradation of the brightness of the light emitted from the display area 12d is provided in, for example, the same pixel 10 as the pixel 10 in which the display element 14W is provided. NTSC based on the luminance gradation of the image displayed by the display element 14B, the display element 14G and the display element 14R, that is, the luminance gradation of the light emitted from the display area 14Bd, the display area 14Gd and the display area 14Rd. It can be calculated by the weighted averaging method. In this case, the gradation W of the brightness of the image displayed by the display element 14W can be calculated by, for example, the equation (1) and rounded off to the first decimal place. The brightness gradation of the image displayed by the display element 14B is B, the brightness gradation of the image displayed by the display element 14G is G, and the brightness gradation of the image displayed by the display element 14R is R. To do.

For example, when the gradation of the brightness of the image displayed by each display element is expressed in 256 steps (gradation 0 to 255), for example, if B = 200, G = 150, and R = 100, the equation (2) As shown in, W = 141.

In the equation (2), the calculated value of the gradation W is rounded off to the first decimal place, but the calculated value of the gradation W may be rounded down to the first decimal place or rounded up to the first decimal place. You may. For example, in the case of the equation (2), when the calculated value of the gradation W is rounded up to the first decimal place or less, the gradation W becomes 140.

Further, the gradation of the brightness of the image displayed by the display element 14W may be calculated without using the NTSC weighted average method. For example, the gradation of the brightness of the image displayed by the display element 14W can be calculated by the equation (3).

Next, the arithmetic circuit unit 20 generates display data V3 having information on the gradation of the brightness of the image displayed by the display element 12 based on the display data V2 and the like. That is, display data V3 having information on the gradation of the brightness of the light emitted from the display area 12d is generated (step S3a). In other words, as shown by the arrow in FIG. 4, the gradation of the brightness of the light emitted from the display area 12d is calculated based on the gradation of the brightness of the light emitted from the display area 14Wd.

The luminance gradation of the image displayed by the display element 12 is equal to, for example, the luminance gradation of the image displayed by the display element 14W provided on the same pixel 10 as the pixel 10 provided with the display element 12. can do. That is, the gradation of the brightness of the light emitted from the display area 12d is, for example, the gradation of the brightness of the light emitted from the display area 14Wd provided in the same pixel 10 as the pixel 10 in which the display area 12d is provided. Can be equal to.

Alternatively, for example, the gradation of the brightness of the image displayed by the display element 12 is the order of the brightness of the image displayed by the display element 14W provided in the same pixel 10 as the pixel 10 in which the display element 12 is provided. It can be assumed that a predetermined value is subtracted from the key. That is, the gradation of the brightness of the light emitted from the display area 12d is, for example, the gradation of the brightness of the light emitted from the display area 14Wd provided in the same pixel 10 as the pixel 10 in which the display area 12d is provided. It can be assumed that a predetermined value is subtracted from.

Alternatively, for example, the illuminance of external light is detected by a sensor or the like, and the gradation of the brightness of the image displayed by the display element 14W calculated by the above method and / or the display element 12 calculated by the above method. The gradation of the brightness of the resulting image may be adjusted. That is, for example, the illuminance of the outside light is detected by a sensor or the like, and the gradation of the brightness of the light emitted from the display area 14Wd calculated by the above method and / or the emission from the display area 12d calculated by the above method. The gradation of the brightness of the light to be generated may be adjusted.

For example, when the illuminance of the outside light is high, the gradation of the brightness of the image displayed by the display element 14W can be lowered, and / or the gradation of the brightness of the image displayed by the display element 12 can be increased. That is, the gradation of the brightness of the light emitted from the display area 14Wd can be lowered, and / or the gradation of the brightness of the light emitted from the display area 12d can be increased. Alternatively, for example, the illuminance of the external light is detected by a sensor or the like, and when the illuminance of the external light is low, for example, the gradation of the brightness of the image displayed by the display element 14W is increased and / or displayed by the display element 12. The gradation of the brightness of the image can be lowered. That is, the gradation of the brightness of the light emitted from the display area 14Wd can be increased, and / or the gradation of the brightness of the light emitted from the display area 12d can be decreased. As described above, the display device 500 can display a high-brightness image even when the illuminance of the external light is low, and the power consumption of the display device 500 can be reduced when the illuminance of the external light is high.

Next, the arithmetic circuit unit 20 transmits the display data V1 and the display data V2 to the source driver circuit unit 506b shown in FIG. 1, and transmits the display data V3 to the source driver circuit unit 506a shown in FIG. After that, the images corresponding to the display data V1, the display data V2, and the display data V3 are displayed (step S4). The above is an example of a configuration in which the pixel 10 is shown in FIG. 4, that is, a method of driving the display device 500 when the display area 12d does not have a coloring film.

By driving the display device 500 having the pixel 10 having the configuration shown in FIG. 4 in the procedure shown in FIG. 6 (A), the brightness of the image displayed by the display element 14 is low, that is, the light emission intensity of the display element 14 is low. Even in this case, a high-luminance image can be displayed by the display element 12 having a function of reflecting incident light. As a result, the display device 500 can display a high-luminance image with low power consumption.

FIG. 6B shows the display device 500 in the case where the pixel 10 has the configuration shown in FIG. 5, that is, the display area 12d (display area 12Bd, display area 12Gd, display area 12Rd) excluding the display area 12Wd has a colored film. It is a flowchart which shows an example of the driving method. First, the same operation as in step S1 shown in FIG. 6A is performed, and then the same operation as in step S2 shown in FIG. 6A is performed.

Next, the arithmetic circuit unit 20 determines the brightness gradation of the image displayed by the display element 12 according to the color of the light emitted from the display area 12d based on the display data V1 and the display data V2. Generate display data V3 having information about. That is, display data V3 having information on the gradation of the brightness of the light emitted from the display area 12d is generated (step S3b).

The brightness gradation of the image displayed by the display element 12B also includes, for example, the brightness gradation of the image displayed by the display element 14B provided on the same pixel 10 as the pixel 10 provided with the display element 12B. And, for example, both can be the same. The brightness gradation of the image displayed by the display element 12G is, for example, the brightness gradation of the image displayed by the display element 14G provided on the same pixel 10 as the pixel 10 provided with the display element 12G. It can be calculated based on, for example, both can be the same. Further, the luminance gradation of the image displayed by the display element 12R is, for example, the luminance gradation of the image displayed by the display element 14R provided on the same pixel 10 as the pixel 10 provided with the display element 12R. It can be calculated based on, for example, both can be the same. The brightness gradation of the image displayed by the display element 12W is, for example, the brightness gradation of the image displayed by the display element 14W provided on the same pixel 10 as the pixel 10 provided with the display element 12W. It can be calculated based on, for example, both can be the same.

That is, as shown by the arrow in FIG. 5, the gradation of the brightness of the light emitted from the display area 12Bd is, for example, from the display area 14Bd provided in the same pixel 10 as the pixel 10 in which the display area 12Bd is provided. It can be calculated based on the gradation of the brightness of the emitted light, and for example, both can be the same. Further, for example, the gradation of the brightness of the light emitted from the display area 12Gd is the order of the brightness of the light emitted from the display area 14Gd provided in the same pixel 10 as the pixel 10 provided with the display area 12Gd. It can be calculated based on the key, for example, both can be the same. Further, for example, the gradation of the brightness of the light emitted from the display area 12Rd is the order of the brightness of the light emitted from the display area 14Rd provided in the same pixel 10 as the pixel 10 in which the display area 12Rd is provided. It can be calculated based on the key, for example, both can be the same. Further, for example, the gradation of the brightness of the light emitted from the display area 12Wd is the order of the brightness of the light emitted from the display area 14Wd provided in the same pixel 10 as the pixel 10 in which the display area 12Wd is provided. It can be calculated based on the key, for example, both can be the same.

Further, the luminance gradation of the image displayed by the display element 12B is, for example, the gradation of the image displayed by the display element 14B and the display element 14W provided in the same pixel 10 as the pixel 10 in which the display element 12B is provided. It can be calculated based on the luminance gradation. For example, it is possible to subtract the luminance gradation of the image displayed by the display element 14W from the luminance gradation of the image displayed by the display element 14B. it can. Further, the luminance gradation of the image displayed by the display element 12G is, for example, the gradation of the image displayed by the display element 14G and the display element 14W provided in the same pixel 10 as the pixel 10 in which the display element 12G is provided. It can be calculated based on the luminance gradation. For example, it is possible to subtract the luminance gradation of the image displayed by the display element 14W from the luminance gradation of the image displayed by the display element 14G. it can. Further, the luminance gradation of the image displayed by the display element 12R is, for example, the gradation of the image displayed by the display element 14R and the display element 14W provided in the same pixel 10 as the pixel 10 in which the display element 12R is provided. It can be calculated based on the luminance gradation. For example, it is possible to subtract the luminance gradation of the image displayed by the display element 14W from the luminance gradation of the image displayed by the display element 14R. it can.

That is, the gradation of the brightness of the light emitted from the display area 12Bd is, for example, the gradation of the light emitted from the display area 14Bd and the display area 14Wd provided in the same pixel 10 as the pixel 10 in which the display area 12Bd is provided. It can be calculated based on the luminance gradation. For example, it is possible to subtract the luminance gradation of the light emitted from the display area 14Wd from the luminance gradation of the light emitted from the display area 14Bd. it can. Further, the gradation of the brightness of the light emitted from the display area 12Gd is, for example, the gradation of the light emitted from the display area 14Gd and the display area 14Wd provided in the same pixel 10 as the pixel 10 in which the display area 12Gd is provided. It can be calculated based on the luminance gradation. For example, it is possible to subtract the luminance gradation of the light emitted from the display area 14Wd from the luminance gradation of the light emitted from the display area 14Gd. it can. Further, the gradation of the brightness of the light emitted from the display area 12Rd is, for example, the gradation of the light emitted from the display area 14Rd and the display area 14Wd provided in the same pixel 10 as the pixel 10 in which the display area 12Rd is provided. It can be calculated based on the gradation of brightness. For example, it is possible to subtract the gradation of the brightness of the light emitted from the display area 14Wd from the gradation of the brightness of the light emitted from the display area 14Rd. it can.

Alternatively, for example, the luminance gradation of the image displayed by the display element 14B, the display element 14G, the display element 14R and / or the display element 14W calculated by the above method by detecting the illuminance of the outside light by a sensor or the like, and / Or the gradation of the brightness of the image displayed by the display element 12B, the display element 12G, the display element 12R and / or the display element 12W calculated by the above method may be adjusted. That is, for example, the illuminance of the outside light is detected by a sensor or the like, and the gradation of the brightness of the light emitted from the display area 14Bd, the display area 14Gd, the display area 14Rd and / or the display area 14Wd calculated by the above method, and / Or the gradation of the brightness of the light emitted from the display area 12Bd, the display area 12Gd, the display area 12Rd and / or the display area 12Wd calculated by the above method may be adjusted.

For example, when the illuminance of external light is high, the gradation of the brightness of the image displayed by the display element 14B, the display element 14G, the display element 14R and / or the display element 14W is lowered, and / or the display element 12B, the display element 12G. , The gradation of the brightness of the image displayed by the display element 12R and / or the display element 12W can be increased. That is, the gradation of the brightness of the light emitted from the display area 14Bd, the display area 14Gd, the display area 14Rd and / or the display area 14Wd is lowered, and / or the display area 12Bd, the display area 12Gd, the display area 12Rd and the display area. The gradation of the brightness of the light emitted from 12 Wd can be increased. Alternatively, for example, the illuminance of the external light is detected by a sensor or the like, and when the illuminance of the external light is low, for example, the gradation of the brightness of the image displayed by the display element 14B, the display element 14G, the display element 14R and / or the display element 14W. And / or the gradation of the brightness of the image displayed by the display element 12B, the display element 12G, the display element 12R and / or the display element 12W can be lowered. That is, the gradation of the brightness of the light emitted from the display area 14Bd, the display area 14Gd, the display area 14Rd and / or the display area 14Wd is increased, and / or the display area 12Bd, the display area 12Gd, the display area 12Rd and / or The gradation of the brightness of the light emitted from the display area 12 Wd can be lowered. As described above, the display device 500 can display a high-brightness image even when the illuminance of the external light is low, and the power consumption of the display device 500 can be reduced when the illuminance of the external light is high.

After the end of step S3b, the same operation as in step S4 shown in FIG. 6A is performed. The above is an example of a method of driving the display device 500 when the pixel 10 has the configuration shown in FIG. 5, that is, when the display area 12Bd, the display area 12Gd, and the display area 12Rd have a colored film.

By driving the display device 500 having the pixel 10 having the configuration shown in FIG. 5 in the procedure shown in FIG. 6B, the display element 12 provides, for example, the gradation of the brightness of the image displayed by the display element 12. It can be calculated based only on the gradation of the brightness of the image displayed by the display element 14 provided in the same pixel 10 as the pixel 10. That is, for example, the luminance gradation of the image displayed by the display element 12B of the pixel 10 (m, n) is only the luminance gradation of the image displayed by the display element 14 of the pixel 10 (m, n). Can be calculated based on, and the gradation of the brightness of the image displayed by the display element 14 of the pixel 10 (m, n + 1), the pixel 10 (m + 1, n), the pixel 10 (m + 1, n + 1), etc. There is no need to take into consideration. As a result, the display device 500 can be driven by a simple procedure, and the power consumption of the display device 500 can be reduced.

Further, in the display device 500, the number of colors represented by one pixel 10 by the display element 12 and the number of colors represented by one pixel 10 by the display element 14 are different. For example, the display element 12 expresses one color with one pixel 10, while the display element 14 expresses a plurality of colors (for example, blue, green, red, and white) with one pixel 10. .. Even in this case, by driving the display device 500 according to the procedure shown in FIGS. 6A and 6B, the arithmetic circuit unit 20 can obtain the display data corresponding to the image displayed by the display element 12 and the display data. It is not necessary to independently generate the display data displayed by the display element 14. That is, it is possible to generate display data corresponding to the image displayed by the display element 12 based on the display data corresponding to the image displayed by the display element 14. As a result, the driving method of the arithmetic circuit unit 20 can be simplified, and the power consumption of the display device 500 can be reduced.

The driving method of the display device 500 shown in FIGS. 6A and 6B is merely an example, and any driving method can be used as long as the object of one aspect of the present invention can be achieved.

Although the configuration in which the display element 12W and the display element 14W are provided is shown in FIGS. 2, 4 and 5, the display element 12W and the display element 14W may be omitted. FIG. 7 is a circuit diagram illustrating an example of the pixel 10 in a configuration in which the display element 12W and the display element 14W are omitted. As shown in FIG. 4, for example, pixel 10 (m, n) has a display element 12B, pixel 10 (m, n + 1) has a display element 12G, and pixel 10 (m, n + 2) has a display element 12R. It can be configured to have. The pixels 10 (m, n + 2) include scanning line GL_L [m], scanning line GL_E1 [m], scanning line GL_E2 [m], signal line SL_E1 [n + 2], signal line SL_L [n + 2], and signal line SL_E2. It has [n + 2].

The positional relationship between the display element 12B, the display element 12G, and the pixel 10 having the display element 12R shown in FIG. 7 is merely an example, and the display element 12B can be attached to any pixel 10 within the range in which the object of one aspect of the present invention can be achieved. , Display element 12G and display element 12R can be provided. For example, the display element 12R may be provided on the pixel 10 (m, n), and the display element 12B may be provided on the pixel 10 (m, n + 2).

FIG. 8 shows the configuration in which the pixel 10 is shown in FIG. 7, and the pixel 10 (m, n), the pixel 10 (m, n + 1) and the pixel 10 (m, n + 2) when the coloring film is not provided in the display area 12d. It is a schematic diagram explaining the display area of. The configuration of the pixel 10 (m, n) and the configuration of the pixel 10 (m, n + 1) are the same as those in FIG. Further, the configuration of the pixel 10 (m, n + 2) is the same as the configuration of the pixel 10 (m + 1, n) shown in FIG.

6 (A) can be referred to for the driving method of the display device 500 having the pixel 10 having the configuration shown in FIG. For example, step S2 can be omitted, and step S3a can be performed after the end of step S1. Further, in step S3a, the arithmetic circuit unit 20 can generate display data V3 having information on the gradation of the brightness of the image displayed by the display element 12 based on, for example, display data V1. For example, the display data V3 can be generated based on the equation (1) or the equation (3). That is, the brightness of the image displayed by the display element 12 is measured by the same procedure as the procedure for calculating the gradation of the brightness of the image displayed by the display element 14W in the display device 500 having the pixel 10 having the configuration shown in FIG. The gradation can be calculated.

Further, in step S4, for example, the arithmetic circuit unit 20 can transmit the display data V1 to the source driver circuit unit 506b shown in FIG. 1 and the display data V3 to the source driver circuit unit 506a shown in FIG. After that, for example, an image corresponding to the display data V1 and the display data V3 can be displayed.

FIG. 9 shows the configuration in which the pixel 10 is shown in FIG. 7, and the pixel 10 (m, n), the pixel 10 (m, n + 1), and the pixel 10 (m, n + 2) when the coloring film is provided in the display area 12d. It is a schematic diagram explaining a display area. The configuration of the pixel 10 (m, n) and the configuration of the pixel 10 (m, n + 1) are the same as those in FIG. Further, the configuration of the pixel 10 (m, n + 2) is the same as the configuration of the pixel 10 (m + 1, n) shown in FIG.

6 (B) can be referred to for the driving method of the display device 500 having the pixel 10 having the configuration shown in FIG. For example, step S2 can be omitted, and step S3b can be performed after the end of step S1. Further, in step S4, for example, the arithmetic circuit unit 20 can transmit the display data V1 to the source driver circuit unit 506b shown in FIG. 1 and the display data V3 to the source driver circuit unit 506a shown in FIG. After that, for example, an image corresponding to the display data V1 and the display data V3 can be displayed.

By configuring the pixels 10 as shown in FIGS. 7 to 9, the area occupied by each pixel 10 can be reduced. As a result, the display device 500 can display a high-resolution image.

The pixel 10 may have, for example, a display element 12W and may not have a display element 14W. Further, the pixel 10 may have, for example, a display element 14W and may not have a display element 12W.

<1-8. Display device configuration example (cross section)>
Next, an example of the cross-sectional structure of the pixel 10 included in the display device 500 will be described with reference to FIGS. 10 to 13.

Note that FIG. 10A shows an example of a top view of the pixel 10 having the configuration shown in FIGS. 4 and 8, and FIG. 10B shows the alternate long and short dash line A1-A2 shown in FIG. 10A. , A3-A4, and A5-A6 correspond to the cross-sectional views of the cut surfaces. In the top view of the pixel 10 shown in FIG. 10A, some of the components are omitted in order to avoid complication.

The pixel 10 shown in FIGS. 10A and 10B has a display element 12, a display element 14, a transistor Tr1, a transistor Tr2, and a transistor Tr3 between the substrate 80 and the substrate 90.

The transistor Tr1 corresponds to the transistor MA5 shown above. Further, the transistor Tr2 corresponds to any one of the transistors MA1 to MA4 shown above. Further, the transistor Tr3 corresponds to any one of the transistors MB1 to MB4 shown above.

Further, the display element 12 has a liquid crystal layer 96, and the display element 14 has an EL layer 76. Further, the transistor Tr1 has a function of selecting the display element 12, the transistor Tr2 has a function of selecting the display element 14, and the transistor Tr3 has a function of controlling the drive of the display element 14. Further, the transistor Tr1 and the transistor Tr2 are formed on the same surface, the transistor Tr3 is formed above the transistor Tr1 and the transistor Tr2, and either the source electrode or the drain electrode of the transistor Tr2 is gated. It has as an electrode.

The display element 12 has a conductive film 36 and a conductive film 38 that function as the first pixel electrode. Further, the transistor Tr1 is electrically connected to the conductive film 36 and has a function of selecting the display element 12. Further, the transistor Tr3 is electrically connected to the conductive film 70 and has a function of selecting the display element 14.

Further, the pixel 10 has a capacitance element 16. The capacitive element 16 has a pair of electrodes, one of the pair of electrodes has a conductive film 42 that functions as a capacitive electrode, and the other of the pair of electrodes has a conductive film 36. The conductive film 42 is arranged below either one or both of the transistor Tr1 and the transistor Tr2.

The capacitive element 16 corresponds to the capacitive element Cs_L described above.

By arranging the conductive film 42 that functions as a capacitive electrode below either one or both of the transistor Tr1 and the transistor Tr2, noise due to rewriting of the display element 12, in other words, noise due to rewriting of liquid crystal pixels can be generated. It can be reduced.

Further, as shown in FIG. 10B, the transistor Tr1 and the transistor Tr2 are formed on the same surface, and the transistor Tr3 is formed above the transistor Tr1 and the transistor Tr2 to increase the circuit area. It can be reduced. Further, since the transistor Tr3 has a configuration in which either the source electrode or the drain electrode of the transistor Tr2 is provided as a gate electrode, the manufacturing process can be shortened.

Further, as shown in FIG. 10B, the transistor Tr1, the transistor Tr2, and the transistor Tr3 are preferably transistors having an inverted staggered structure (also referred to as a bottom gate structure), respectively. By using a transistor having a bottom gate structure, the transistor can be manufactured by a relatively simple process. However, one aspect of the present invention is not limited to this, and a transistor having a top gate structure may be used.

Further, the display element 12 has a function of reflecting incident light. The display element 12 is a so-called liquid crystal element, and has a liquid crystal layer 96 between the pair of electrodes. One of the pair of electrodes has a conductive film 36, and the other of the pair of electrodes has a conductive film 92. Further, as shown in FIG. 10B, the display element 12 may have alignment films 94 and 98 in contact with the liquid crystal layer 96. Further, the conductive film 36 has a function as a reflective electrode. By reflecting the light incident from the outside by the conductive film 36 as shown by the broken line arrow in FIG. 10B, the light can be reflected to the visual recognition side. That is, it has a function of reflecting the light incident on the display element 12 in the direction in which the display element 12 displays.

The display element 14 has a function of emitting light. The display element 14 is a so-called light emitting element, and has a light emitting layer between the pair of electrodes. As the light emitting layer, for example, EL layer 76 can be used. One of the pair of electrodes has a conductive film 70, and the other of the pair of electrodes has a conductive film 78. Further, the conductive film 78 has a function as a reflective electrode. The light emitted by the EL layer 76 as shown by the arrow of the alternate long and short dash line in FIG. 10B is reflected by the conductive film 78, passes through the conductive film 70, and is taken out to the liquid crystal layer 96 side. Further, the light emitted from the display element 14 passes through the opening provided in the conductive film 36 and is taken out to the substrate 90 side. In FIG. 10B, the opening is clearly indicated as a display area 14d.

The colored film 69 is provided so as to overlap the display region 14d, and the light from the display element 14 passes through the colored film 69 and is taken out to the outside. As a result, only the light of the color transmitted through the coloring film 69 is taken out to the outside. Further, as shown in FIG. 10B, it is preferable that the colored film 69 has a configuration that covers a part of the transistor Tr1. In particular, by covering the channel region of the transistor Tr1, the amount of light entering the channel region can be reduced. By reducing the amount of light entering the channel region, it is possible to improve the light resistance of the transistor Tr1.

FIG. 11 is a cross-sectional view of the configuration in which the colored film 69 is omitted from the pixel 10 shown in FIG. 10 (B). In the pixel 10 having this configuration, the display element 14 may be a light emitting element on which an EL layer 76 that emits light such as blue, green, red, and white is formed. Further, even when the display element 14 is the display element 14W, the pixel 10 has the configuration shown in FIG. The EL layer 76 can be produced by using, for example, FFM (Fine Metal Mask).

Note that FIG. 12A shows an example of a top view of the pixel 10 having the configuration shown in FIGS. 5 and 9, and FIG. 12B shows the alternate long and short dash line A1-A2 shown in FIG. 12A. , A3-A4, and A5-A6 correspond to the cross-sectional views of the cut surfaces. In the top view of the pixel 10 shown in FIG. 12A, some of the components are omitted in order to avoid complication.

The pixel 10 having the configuration shown in FIG. 12B has a coloring film 100 and an overcoat film 104 in addition to the components of the pixel 10 having the configuration shown in FIG. 10B. The coloring film 100 is provided in contact with the substrate 90. Further, the colored film 100 is provided so as to have a region overlapping with the conductive film 36. With this configuration, the light reflected by the conductive film 36 passes through the colored film 100 and is taken out to the outside. As a result, only the light of the color transmitted through the coloring film 100 is taken out to the outside. Further, the coloring film 100 is provided so as not to overlap with the display area 14d. That is, it is provided so as not to overlap with the display element 14. As a result, the light emitted from the display element 14 is absorbed by the coloring film 100, and it is possible to suppress changes in hue and the like. Therefore, the display quality of the image displayed by the display device of one aspect of the present invention can be improved.

The overcoat film 104 is provided in contact with the substrate 90 and the colored film 100. The overcoat film 104 has a function as a flattening film. Further, the overcoat film 104 is in contact with the conductive film 92. As the overcoat film 104, for example, a polyimide resin, an epoxy resin, an acrylic resin, or the like can be used.

FIG. 13 is a cross-sectional view of the configuration in which the colored film 69 is omitted from the pixel 10 shown in FIG. 12 (B). Similar to the case shown in FIG. 11, in the pixel 10 having the configuration, the display element 14 may be a light emitting element on which an EL layer 76 that emits light such as blue, green, red, and white is formed. Further, even when the display element 14 is the display element 14W, the pixel 10 has the configuration shown in FIG. The EL layer 76 can be produced by using, for example, FFM (Fine Metal Mask).

<1-9. Display device components>
Next, each component of the display device 500 illustrated in FIGS. 1 to 13 will be described below.

[substrate]
As the substrates 30, 80, 90, materials having heat resistance sufficient to withstand the heat treatment during the manufacturing process can be used.

Specifically, non-alkali glass, soda-lime glass, potash glass, crystal glass, quartz, sapphire and the like can be used. Moreover, you may use an inorganic insulating film. Examples of the inorganic insulating film include a silicon oxide film, a silicon nitride film, a silicon nitride film, and an aluminum oxide film.

Further, the non-alkali glass may have a thickness of, for example, 0.2 mm or more and 0.7 mm or less. Alternatively, the above thickness may be obtained by polishing the non-alkali glass.

In addition, as non-alkali glass, 6th generation (1500 mm × 1850 mm), 7th generation (1870 mm × 2200 mm), 8th generation (2200 mm × 2400 mm), 9th generation (2400 mm × 2800 mm), 10th generation (2950 mm × 3400 mm). ) Etc., a glass substrate having a large area can be used. As a result, a large display device can be manufactured.

Further, as the substrates 30, 80 and 90, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate or the like may be used.

Further, as the substrates 30, 80 and 90, an inorganic material such as metal may be used. Examples of the inorganic material such as metal include stainless steel and aluminum.

Further, as the substrates 30, 80 and 90, an organic material such as resin, resin film or plastic may be used. Examples of the resin film include polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES). , Or a resin having a siloxane bond.

Further, as the substrates 30, 80 and 90, a composite material in which an inorganic material and an organic material are combined may be used. As the composite material, a material obtained by laminating a metal plate or a thin plate-shaped glass plate and a resin film, a fibrous metal, a particulate metal, a fibrous glass, or a granular glass is dispersed in a resin film. Examples thereof include a material obtained by dispersing a fibrous resin and a particulate resin in an inorganic material.

Further, the substrates 30, 80, 90 may be any one or a plurality of an insulating film, a semiconductor film, and a conductive film as long as they can support at least a film or a layer formed above or below. Good.

[Conducting film]
Conductive films 31, 36, 38, 42, 46a, 46b, 46c, 52a, 52b, 52c, 52d, 52e, 58a, 58b, 64, 70, 78, 92 include conductive metal films and visible light. A conductive film having a function of reflecting or a conductive film having a function of transmitting visible light may be used.

As the conductive metal film, a material containing a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium or manganese can be used. it can. Alternatively, an alloy containing the above-mentioned metal element may be used.

Specific examples of the above-mentioned conductive metal film include a two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a titanium nitride film, and a copper film on a tantalum nitride film. A two-layer structure to be laminated, a three-layer structure in which a copper film is laminated on a titanium film and a titanium film is further formed on the copper film may be used. In particular, it is preferable to use a conductive film containing a copper element because the resistance can be lowered. Moreover, as a conductive film containing a copper element, or an alloy film containing copper and manganese can be mentioned. The alloy film is suitable because it can be processed by a wet etching method.

Further, as the conductive film having the above-mentioned conductivity, a conductive polymer or a conductive polymer may be used.

Further, as the conductive film having the function of reflecting visible light described above, a material containing a metal element selected from gold, silver, copper, or palladium can be used. In particular, it is preferable to use a conductive film containing a silver element because the reflectance in visible light can be increased.

Further, as the conductive film having the function of transmitting visible light described above, a material containing an element selected from indium, tin, zinc, gallium, or silicon can be used. Specifically, In oxide, Zn oxide, In-Sn oxide (also referred to as ITO), In-Sn-Si oxide (also referred to as ITSO), In-Zn oxide, In-Ga-Zn oxide. And so on.

Further, as the conductive film having the above-mentioned function of transmitting visible light, a film containing graphene or graphite may be used. As the film containing graphene, a film containing graphene can be formed, and a film containing graphene can be formed by reducing the film containing graphene oxide. Examples of the method of reduction include a method of applying heat and a method of using a reducing agent.

Further, the conductive films 31, 36, 38, 42, 46a, 46b, 46c, 52a, 52b, 52c, 52d, 52e, 58a, 58b, 64, 70, 78, 92 can be formed by the electroless plating method. it can. As the material that can be formed by the electroless plating method, for example, any one or a plurality selected from Cu, Ni, Al, Au, Sn, Co, Ag, and Pd can be used. In particular, Cu or Ag is preferable because the resistance of the conductive film can be lowered.

Further, when the conductive film is formed by the electroless plating method, a diffusion prevention film may be formed under the conductive film so that the constituent elements of the conductive film do not diffuse to the outside. Further, a seed film capable of growing the conductive film may be formed between the diffusion prevention film and the conductive film. The diffusion prevention film can be formed, for example, by using a sputtering method. Further, as the diffusion prevention film, for example, a tantalum nitride film or a titanium nitride film can be used. Further, the seed film can be formed by an electroless plating method. Further, as the sheet film, the same material as the material of the conductive film that can be formed by the electroless plating method can be used.

Further, the above-mentioned conductive film having a function of reflecting visible light and a conductive film having a function of transmitting visible light may be combined to form a conductive film having a function of reflecting and a function of transmitting visible light. For example, there is a configuration in which one of the pair of electrodes of the display element 14 is a conductive film having a function of reflecting, and the other is a conductive film having a function of reflecting and a function of transmitting. With this configuration, a micro-optical resonator (microcavity) structure that utilizes the resonance effect of light between a pair of electrodes is formed, so that the light intensity at a specific wavelength can be increased.

The other of the pair of electrodes (for example, the conductive film 70) of the display element 14 can have a laminated structure of an In—Sn—Si oxide and an alloy containing silver. The silver-containing alloy may be a thin film (for example, 50 nm or less, more preferably 30 nm or less) in order to transmit visible light.

[Insulating film]
The insulating films 32, 34, 40, 44, 48, 54, 60, 62, 68, 72 include an insulating inorganic material, an insulating organic material, or an insulating inorganic material and an insulating organic material. Insulating composite materials including can be used.

Examples of the above-mentioned insulating inorganic material include a silicon oxide film, a silicon nitride film, a silicon nitride film, a silicon nitride film, and an aluminum oxide film. Further, a plurality of the above-mentioned inorganic materials may be laminated.

Further, as the above-mentioned insulating organic material, for example, a material containing polyester, polyolefin, polyamide (nylon, aramid, etc.), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, or resin having a siloxane bond is used. Can be mentioned. Further, as the above-mentioned insulating organic material, a material having photosensitivity may be used.

[Metal oxide film]
The metal oxide films 50a, 50b, 56 are In-M-Zn oxides (M is gallium, aluminum, silicon, titanium, germanium, boron, yttrium, copper, vanadium, beryllium, iron, nickel, zirconium, molybdenum, lantern. , Cerium, neodymium, hafnium, tantalum, tungsten, or gallium). Further, In-Ga oxide and In-Zn oxide may be used as the metal oxide films 50a, 50b and 56. The metal oxide using the substance has a larger bandgap than silicon. Therefore, it is preferable because the current in the off state of the transistors Tr1, Tr2, and Tr3 can be reduced. The metal oxide films that can be used for the metal oxide films 50a, 50b, and 56 will be described in detail in the third and fourth embodiments.

[Liquid crystal layer]
Examples of the liquid crystal layer 96 include a thermotropic liquid crystal, a low molecular weight liquid crystal, a polymer liquid crystal, a polymer dispersion type liquid crystal, a strong dielectric liquid crystal, and an anti-strong dielectric liquid crystal. Alternatively, a liquid crystal material exhibiting a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, or the like may be used. Alternatively, a liquid crystal material showing a blue phase may be used.

Further, as a driving method of the liquid crystal layer 96, an IPS (In-Plane-Switching) mode, a TN (Twisted Nematic) mode, an FFS mode, an ASM (Axially Symmetrically named Micro-cell) mode, an OCB (Optical symmetry) mode FLC (Ferroelectric Liquid Crystal) mode, AFLC (Antiferroelectric Liquid Crystal) mode and the like can be mentioned. In addition, a vertical orientation (VA) mode, specifically, an MVA (Multi-Domain Vertical Alignment) mode, a PVA (Partnered Vertical Alignment) mode, an ECB (Electrically Controlled Birefringence) mode, a CPA mode. A driving method such as an Advanced Super-View) mode may be used.

[EL layer]
The EL layer 76 has at least a light emitting material. Examples of the light emitting material include organic compounds and inorganic compounds such as quantum dots.

The above-mentioned organic compound and inorganic compound can be formed by using, for example, a vapor deposition method (including a vacuum vapor deposition method), an inkjet method, a coating method, a gravure printing method, or the like.

Examples of the material that can be used for the organic compound include a fluorescent material and a phosphorescent material. From the viewpoint of life, a fluorescent material may be used, and from the viewpoint of efficiency, a phosphorescent material may be used. A fluorescent material and a phosphorescent material may be appropriately selected and used according to the emission color in consideration of efficiency and life. Alternatively, the configuration may include both a fluorescent material and a phosphorescent material.

The quantum dots are semiconductor nanocrystals having a size of several nanometers and are composed of about 1 × 10 ³ to 1 × 10 ⁶ atoms. Since quantum dots shift energy depending on their size, even quantum dots composed of the same substance have different emission wavelengths depending on their size, and the emission wavelength can be easily adjusted by changing the size of the quantum dots used. be able to.

Further, since the quantum dot has a narrow peak width in the emission spectrum, it is possible to obtain emission with good color purity. Furthermore, the theoretical external quantum efficiency of quantum dots is said to be approximately 100%, which greatly exceeds 25% of organic compounds exhibiting fluorescence emission and is equivalent to that of organic compounds exhibiting phosphorescence emission. From this, it is possible to obtain a light emitting device having high luminous efficiency by using quantum dots as a light emitting material. Moreover, since the quantum dots, which are inorganic compounds, are also excellent in their intrinsic stability, it is possible to obtain a light emitting device that is preferable from the viewpoint of life.

Materials constituting the quantum dots include elements of Group 14 of the periodic table, elements of Group 15 of the periodic table, elements of Group 16 of the periodic table, compounds composed of multiple elements of Group 14 of the periodic table, and groups 4 to 14 of the periodic table. A compound of an element belonging to Group 14 and an element of Group 16 of the periodic table, a compound of an element of Group 2 of the periodic table and an element of Group 16 of the periodic table, and a compound of an element of Group 13 of the periodic table and an element of Group 15 of the periodic table. , Compounds of Group 13 of the Periodic Table and Group 17 of the Periodic Table, Compounds of Group 14 of the Periodic Table and Elements of Group 15 of the Periodic Table, Elements of Group 11 of the Periodic Table and Elements of Group 17 of the Periodic Table Examples include compounds, iron oxides, titanium oxides, chalcogenide spinels, and various semiconductor clusters.

Specifically, cadmium selenium, cadmium sulfide, cadmium tellurate, zinc serene, zinc oxide, zinc sulfide, zinc tellurate, mercury sulfide, mercury serene, mercury tellurate, indium arsenide, indium phosphate, gallium arsenide. , Gallium phosphate, indium nitride, gallium nitride, indium antimonized, gallium antimonized, aluminum phosphate, aluminum arsenide, aluminum antimonized, lead serene, lead tellurated, lead sulfide, indium serene, indium tellurated, sulfide Indium, gallium selenium, arsenic sulfide, arsenide selenium, arsenide tellurium, antimony sulfide, antimony selenium, antimony tellurium, bismuth sulfide, bismuth serene, bismuth tellurium, silicon, silicon carbide, germanium, tin, selenium, Tellurium, boron, carbon, phosphorus, boron nitride, boron phosphate, boron arsenide, aluminum nitride, aluminum sulfide, barium sulfide, barium selenium, barium tellurium, calcium sulfide, calcium selenium, calcium tellurium, berylium sulfide, selenium Berylium b, tellurium, tellurium, magnesium sulfide, magnesium selenium, germanium sulfide, germanium selenium, germanium tellurate, tin sulfide, tin selenium, tin tellurate, lead oxide, copper fluoride, copper chloride, copper bromide, Copper iodide, copper oxide, copper selenium, nickel oxide, cobalt oxide, cobalt sulfide, triiron tetroxide, iron sulfide, manganese oxide, molybdenum sulfide, vanadium oxide, tungsten oxide, tellurium oxide, titanium oxide, zirconium oxide, nitride Silicon, germanium nitride, aluminum oxide, barium titanate, selenium, zinc and cadmium compounds, indium, arsenic and phosphorus compounds, cadmium, selenium and sulfur compounds, cadmium, selenium and tellurium compounds, indium, gallium and arsenic Examples include, but are not limited to, compounds, indium-gallium-selenium compounds, indium-selenium-sulfur compounds, copper-indium-sulfur compounds and combinations thereof. Further, so-called alloy-type quantum dots whose composition is represented by an arbitrary ratio may be used. For example, cadmium-selenium-sulfur alloy quantum dots are one of the effective means for obtaining blue light emission because the emission wavelength can be changed by changing the element content ratio.

The structure of the quantum dots includes a core type, a core-shell type, a core-multishell type, and any of them may be used, but the shell is made of another inorganic material that covers the core and has a wider bandgap. By forming, the influence of defects and dangling bonds existing on the surface of the nanocrystal can be reduced. As a result, it is preferable to use core-shell type or core-multi-shell type quantum dots because the quantum efficiency of light emission is greatly improved. Examples of shell materials include zinc sulfide and zinc oxide.

In addition, since quantum dots have a high proportion of surface atoms, they are highly reactive and easily aggregate. Therefore, it is preferable that a protective agent is attached or a protecting group is provided on the surface of the quantum dot. By attaching the protective agent or providing a protecting group, aggregation can be prevented and solubility in a solvent can be enhanced. It is also possible to reduce reactivity and improve electrical stability. Examples of the protective agent (or protective group) include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether, tripropylphosphine, tributylphosphine, trihexylphosphine, and tri. Trialkylphosphines such as octylphosphine, polyoxyethylene alkylphenyl ethers such as polyoxyethylene n-octylphenyl ether and polyoxyethylene n-nonylphenyl ether, tri (n-hexyl) amine, tri (n-octyl) Tertiary amines such as amines and tri (n-decyl) amines, organic phosphorus compounds such as tripropylphosphine oxide, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, tridecylphosphine oxide, polyethylene glycol dilaurate, Polyethylene glycol diesters such as polyethylene glycol distearate, organic nitrogen compounds such as nitrogen-containing aromatic compounds such as pyridine, lutidine, colidin, and quinoline, hexylamine, octylamine, decylamine, dodecylamine, tetradecylamine, Amino alkanes such as hexadecylamine and octadecylamine, dialkyl sulfides such as dibutyl sulfide, dialkyl sulfoxides such as dimethyl sulfoxide and dibutyl sulfoxide, organic sulfur compounds such as sulfur-containing aromatic compounds such as thiophene, palmitic acid, stearic acid. , Higher fatty acids such as oleic acid, alcohols, sorbitan fatty acid esters, fatty acid-modified polyesters, tertiary amine-modified polyurethanes, polyethyleneimines and the like.

Since the band gap of quantum dots increases as the size decreases, the size of the quantum dots is appropriately adjusted so that light having a desired wavelength can be obtained. As the crystal size decreases, the emission of quantum dots shifts to the blue side, that is, to the high energy side. Therefore, by changing the size of the quantum dots, the wavelengths of the spectra in the ultraviolet region, visible region, and infrared region The emission wavelength can be adjusted over the region. The size (diameter) of the quantum dots is usually in the range of 0.5 nm to 20 nm, preferably 1 nm to 10 nm. The narrower the size distribution of the quantum dots, the narrower the emission spectrum becomes, and it is possible to obtain emission with good color purity. Further, the shape of the quantum dot is not particularly limited, and may be spherical, rod-shaped, disk-shaped, or other shape. Since a quantum rod, which is a rod-shaped quantum dot, exhibits light having directivity polarized in the c-axis direction, a light emitting element having better external quantum efficiency can be obtained by using the quantum rod as a light emitting material. ..

Further, in the EL element, in many cases, the luminous efficiency is improved by dispersing the light emitting material in the host material, but the host material needs to be a substance having a singlet excitation energy or a triplet excitation energy equal to or higher than that of the light emitting material. is there. In particular, when a blue phosphorescent material is used, it is extremely difficult to develop a host material that has more triplet excitation energy and is excellent in terms of lifetime. On the other hand, since the quantum dots can maintain the luminous efficiency even if the light emitting layer is formed only by the quantum dots without using the host material, a preferable light emitting element can be obtained from the viewpoint of the life. When the light emitting layer is formed only by the quantum dots, the quantum dots preferably have a core-shell structure (including a core-multishell structure).

[Alignment film]
As the alignment films 94 and 98, a material containing a polyimide resin or the like can be used. For example, the rubbing treatment or the photo-alignment treatment may be performed so that the material containing the polyimide resin or the like is oriented in a predetermined direction.

[Colored film]
The coloring films 69 and 100 have a function as a so-called color filter. The colored films 69 and 100 include materials that transmit light of a predetermined color (for example, materials that transmit blue light, materials that transmit green light, materials that transmit red light, and materials that transmit yellow light. A material or a material that transmits white light, etc.) may be used.

[Structure]
As the structure 74, an insulating material including an organic material, an inorganic material, or a composite material of the organic material and the inorganic material can be used. As the insulating material, the materials listed in the insulating films 32, 34, 40, 44, 48, 54, 60, 62, 68 and 72 can be used.

[Encapsulant]
As the sealing material 82, an inorganic material, an organic material, or a composite material of an inorganic material and an organic material can be used. Examples of the above-mentioned organic material include an organic material containing a thermosetting resin or a thermosetting resin. Further, as the sealing material 82, an adhesive containing a resin material (reaction-curable adhesive, photocurable adhesive, thermosetting adhesive, anaerobic adhesive, etc.) may be used. Examples of the above-mentioned resin materials include epoxy-based resins, acrylic-based resins, silicone-based resins, phenol-based resins, polyimide-based resins, imide-based resins, PVC (polyvinyl chloride) -based resins, and PVB (polyvinyl butyral) -based resins. Examples include EVA (ethylene vinyl acetate) -based resins.

Further, although not explicitly shown in FIGS. 1 to 13, the display device 500 may have the following components.

[Functional membrane]
The display device 500 may have a functional film in contact with either or both of the substrate 80 and the substrate 90. As the functional film, a polarizing plate, a retardation plate, a diffusion film, an antireflection film, a light collecting film and the like can be used. Further, as the functional film, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches due to use, and the like can be used.

[Shading film]
The display device 500 may have a light-shielding film that suppresses the transmission of light between adjacent pixels. Examples of the light-shielding film include a metal material, an organic resin material containing a black pigment, and the like.

As described above, in the display device of one aspect of the present invention, two types of display elements can be independently controlled by using different transistors. Therefore, it is possible to provide a display device having high display quality.

The configuration shown in this embodiment can be used in combination with the configurations shown in other embodiments as appropriate.

(Embodiment 2)
In the present embodiment, an example of the frame configuration, an example of the configuration of the gate driver circuit units 504a and 504b, and an example of the driving method will be described with reference to FIGS. 14 to 18. In the present embodiment, it is assumed that the pixel portion 502 shown in FIG. 1 has 1920 rows of pixels 10.
<2-1. Frame configuration example>

FIG. 14 is an example of a frame configuration diagram. In the frame configuration diagram shown in FIG. 14, the portion described as B indicates the blanking interval.

In the present specification and the like, the wiring GL_E1 [a] and the wiring GL_E2 [a] may be collectively referred to as the wiring GL_E [a]. For example, applying a high potential to the wiring GL_E [a] means applying a high potential to both the wiring GL_E1 [a] and the wiring GL_E2 [a]. Further, for example, applying a high potential to the wiring GL_E [a] means applying a low potential to both the wiring GL_E1 [a] and the wiring GL_E2 [a].

The upper frame configuration diagram shows the wiring to which the high potential is applied in the wiring GL_L [1] to the wiring GL_L [1920]. The numbers shown in the upper frame configuration diagram indicate the line of wiring GL_L to which a high potential is applied. That is, for example, when it is described as 2, it means that a high potential is applied to the wiring GL_L [2].

The lower frame configuration diagram shows the wiring to which a high potential is applied in the wiring GL_E1 [1] to the wiring GL_E1 [1920] and the wiring GL_E2 [1] to the wiring GL_E2 [1920]. In the lower frame configuration diagram, when a-1 (a is an integer of 1 or more and 1920 or less) is described, it indicates that a high potential is applied to GL_E1 [a], and is described as a-2. If it is, it indicates that a high potential is applied to GL_E2 [a].

As shown in FIG. 14, while the high potential is applied to the wiring GL_L [p] (p is an integer of 2 or more and 1920 or less), the high potential is applied to the wiring GL_E2 [p-1] or the wiring GL_E1 [p]. It is applied.

<2-2. Configuration example of gate driver circuit unit 504a>
FIG. 15 is a block diagram showing a configuration example of the gate driver circuit unit 504a shown in FIG. As shown in the first embodiment, the gate driver circuit unit 504a has a function of controlling the potential of the wiring GL_L [1] to the wiring GL_L [1922]. The wiring GL_L [1921] and the wiring GL_L [1922] are dummy wirings that are not electrically connected to the pixel 10.

The gate driver circuit unit 504a includes a shift register circuit unit 22 [1] to a shift register circuit unit 22 [1922]. The shift register circuit unit 22 [1921] and the shift register circuit unit 22 [1922] can be referred to as a dummy shift register circuit unit 22.

In FIGS. 15 to 18 and the like, (DUM) is added to the dummy wiring and the dummy shift register circuit section.

The wiring GL_L [q] is electrically connected to the shift register circuit unit 22 [q] (q is an integer of 1 or more and 1922 or less). Any one of wiring PL1_L, wiring PL2_L, wiring PL3_L, and wiring PL4_L is electrically connected to the shift register circuit unit 22 [q]. Any three of wiring CL1_L, wiring CL2_L, wiring CL3_L, and wiring CL4_L are electrically connected to the shift register circuit unit 22 [q]. The wiring SPL_L is electrically connected to the shift register circuit unit 22 [1].

The wiring PL1_L to the wiring PL4_L have a function of supplying a pulse width control signal to the shift register circuit unit 22 [1] to the shift register circuit unit 22 [1922]. The wiring CL1_L to the wiring CL4_L have a function of supplying a clock signal to the shift register circuit unit 22 [1] to the shift register circuit unit 22 [1922]. The wiring SPL_L has a function of supplying a start pulse to the shift register circuit unit 22 [1].

<2-3. How to drive the gate driver circuit section 504a>
FIG. 16 is a timing chart showing an example of the potentials of wiring CL1_L to wiring CL4_L, wiring PL1_L to wiring PL4_L, wiring SPL_L, wiring GL_L [1] to wiring GL_L [4], and wiring GL_L [1919] to wiring GL_L [1922]. Is. Since any one of the wiring PL1_L to the wiring PL4_L has a high potential, any one of the wiring GL_L [1] to the wiring GL_L [1922] has a high potential. Further, the high-potential wiring in the wiring PL1_L to the wiring PL4_L is switched to the low potential, so that the high-potential wiring in the wiring GL_L [1] to the wiring GL_L [1922] is switched to the low potential.

<2-4. Configuration example of gate driver circuit unit 504b>
FIG. 17 is a block diagram showing a configuration example of the gate driver circuit unit 504b shown in FIG. As shown in the first embodiment, the gate driver circuit unit 504b has a function of controlling the potentials of the wiring GL_E1 [1] to the wiring GL_E1 "1922" and the wiring GL_E2 [1] to the wiring GL_E2 "1922". The wiring GL_E1 [1921], the wiring GL_E1 [1922], the wiring GL_E2 [1921], and the wiring GL_E2 [1922] are dummy wirings that are not electrically connected to the pixel 10.

The gate driver circuit unit 504b includes a shift register circuit unit 23 [1] to a shift register circuit unit 23 [1922]. The shift register circuit unit 23 [1921] and the shift register circuit unit 23 [1922] can be referred to as a dummy shift register circuit unit 23.

Wiring GL_E1 [q] and wiring GL_E2 [q] are electrically connected to the shift register circuit unit 23 [q]. Any one of wiring PL1_E1, wiring PL2_E1, wiring PL3_E1 and wiring PL4_E1 is electrically connected to the shift register circuit unit 23 [q]. Any one of wiring PL1_E2, wiring PL2_E2, wiring PL3_E2, and wiring PL4_E2 is electrically connected to the shift register circuit unit 23 [q]. Any three of wiring CL1_E, wiring CL2_E, wiring CL3_E, and wiring CL4_E are electrically connected to the shift register circuit unit 23 [q]. The wiring SPL_E is electrically connected to the shift register circuit unit 23 [1].

The wiring PL1_E1 to wiring PL4_E1 and the wiring PL1_E2 to wiring PL4_E2 have a function of supplying a pulse width control signal to the shift register circuit unit 23 [1] to the shift register circuit unit 23 [1922]. The wiring CL1_E to the wiring CL4_E have a function of supplying a clock signal to the shift register circuit unit 23 [1] to the shift register circuit unit 23 [1922]. The wiring SPL_E has a function of supplying a start pulse to the shift register circuit unit 23 [1].
<2-5. How to drive the gate driver circuit section 504b>

FIG. 18 shows wiring CL1_E to wiring CL4_E, wiring PL1_E1 to wiring PL4_E1, wiring PL1_E2 to wiring PL4_E2, wiring SPL_E, wiring GL_E1 [1] to wiring GL_E1 [4], wiring GL_E2 [1] to wiring GL_E2 [4], and wiring. It is a timing chart which shows the potential of wiring GL_E1 [1919] to wiring GL_E1 [1922] and wiring GL_E2 [1919] to wiring GL_E2 [1922].

When any one of the wiring PL1_E1 to the wiring PL4_E1 becomes high potential, any one of the wiring GL_E1 [1] to the wiring GL_E1 [1922] becomes high potential, and the high potential in the wiring PL1_E1 to the wiring PL4_E1 becomes high. When the wiring is switched to the low potential, the high potential wiring in the wiring GL_E1 [1] to the wiring GL_E1 [1922] is switched to the low potential. Further, since any one of the wiring PL1_E2 to the wiring PL4_E2 has a high potential, any one of the wiring GL_E2 [1] to the wiring GL_E2 [1922] has a high potential, and the height in the wiring PL1_E2 to the wiring PL4_E2 becomes high. When the wiring of the potential is switched to the low potential, the wiring of the high potential in the wiring GL_E2 [1] to the wiring GL_E2 [1922] is switched to the low potential.

The configuration shown in this embodiment can be used in combination with the configurations shown in other embodiments as appropriate.

(Embodiment 3)
In the present embodiment, the configuration in which the input device is attached to the display device of one aspect of the present invention will be described with reference to FIGS. 19 to 23.

<3-1. Explanation about input / output device>
In the present embodiment, the touch panel 2000 in which the display device 500 and the input device are combined will be described. Further, as an example of the input device, a case where a touch sensor is used will be described.

19 (A) and 19 (B) are perspective views of the touch panel 2000. Note that, in FIGS. 19A and 19B, typical components of the touch panel 2000 are shown for clarity.

The touch panel 2000 has a display device 500 and a touch sensor 2595 (see FIG. 19B). Further, the touch panel 2000 has a substrate 80, a substrate 90, and a substrate 2590.

The display device 500 has a plurality of pixels on the substrate 80 and a plurality of wirings 2511 capable of supplying signals to the pixels. The plurality of wirings 2511 are routed to the outer peripheral portion of the substrate 80, and a part thereof constitutes the terminal 2519. Terminal 2519 is electrically connected to FPC2509 (1).

The substrate 2590 has a touch sensor 2595 and a plurality of wires 2598 that are electrically connected to the touch sensor 2595. The plurality of wirings 2598 are routed around the outer peripheral portion of the substrate 2590, and a part thereof constitutes a terminal. Then, the terminal is electrically connected to the FPC2509 (2). In FIG. 19B, for clarity, the electrodes, wiring, and the like of the touch sensor 2595 provided on the back surface side (the surface side facing the substrate 80) of the substrate 2590 are shown by solid lines.

As the touch sensor 2595, for example, a capacitance type touch sensor can be applied. Examples of the capacitance method include a surface type capacitance method and a projection type capacitance method.

The projection type capacitance method includes a self-capacitance method and a mutual capacitance method mainly due to the difference in the drive method. It is preferable to use the mutual capacitance method because simultaneous multipoint detection is possible. The touch sensor 2595 shown in FIG. 19B has a configuration in which a projection type capacitance type touch sensor is applied.

Further, various sensors capable of detecting the proximity or contact of a detection target such as a finger can be applied to the touch sensor 2595.

The projection type capacitance type touch sensor 2595 has an electrode 2591 and an electrode 2592. The electrode 2591 is electrically connected to any one of the plurality of wires 2598, and the electrode 2592 is electrically connected to any other of the plurality of wires 2598.

As shown in FIGS. 19A and 19B, the electrode 2592 has a shape in which a plurality of quadrilaterals repeatedly arranged in one direction are connected at a corner.

The electrode 2591 is a quadrilateral and is repeatedly arranged in a direction intersecting the extending direction of the electrode 2592.

The wiring 2594 is electrically connected to two electrodes 2591 that sandwich the electrode 2592. At this time, it is preferable that the area of the intersection between the electrode 2592 and the wiring 2594 is as small as possible. As a result, the area of the region where the electrodes are not provided can be reduced, and the variation in transmittance can be reduced. As a result, it is possible to reduce the variation in the brightness of the light transmitted through the touch sensor 2595.

The shapes of the electrode 2591 and the electrode 2592 are not limited to this, and various shapes can be taken. For example, a plurality of electrodes 2591 may be arranged so as not to form a gap as much as possible, and a plurality of electrodes 2592 may be provided at intervals so as to form a region that does not overlap with the electrode 2591 via an insulating layer. At this time, it is preferable to provide a dummy electrode electrically insulated from the two adjacent electrodes 2592 because the area of regions having different transmittances can be reduced.

In addition, a conductive conductive film such as an electrode 2591, an electrode 2592, and a wiring 2598, that is, a transparent conductive film having indium oxide, tin oxide, zinc oxide, or the like as a material that can be used for the wiring or the electrode constituting the touch panel (for example, ITO). Etc.). Further, as a material that can be used for wiring and electrodes constituting the touch panel, for example, a material having a low resistance value is preferable. As an example, silver, copper, aluminum, carbon nanotubes, graphene, metal halides (silver halide and the like) and the like may be used. In addition, metal nanowires may be used that are constructed using a plurality of very thin (eg, a few nanometers in diameter) conductors. Alternatively, a metal mesh in which the conductor is meshed may be used. As an example, Ag nanowires, Cu nanowires, Al nanowires, Ag mesh, Cu mesh, Al mesh and the like may be used. For example, when Ag nanowires are used for the wiring and electrodes constituting the touch panel, the transmittance can be 89% or more and the sheet resistance value can be 40Ω / □ or more and 100Ω / □ or less in visible light. Further, metal nanowires, metal meshes, carbon nanotubes, graphene, etc., which are examples of materials that can be used for the wiring and electrodes constituting the touch panel described above, have high transmittance in visible light, and therefore, electrodes used for display elements ( For example, it may be used as a pixel electrode or a common electrode).

<3-2. Explanation about touch sensor>
Next, the details of the touch sensor 2595 will be described with reference to FIG. FIG. 20 corresponds to a cross-sectional view between the alternate long and short dash lines X1-X2 shown in FIG. 19 (B).

The touch sensor 2595 has electrodes 2591 and 2592 arranged in a staggered manner on the substrate 2590, an insulating layer 2593 covering the electrodes 2591 and 2592, and wiring 2594 that electrically connects adjacent electrodes 2591.

The electrode 2591 and the electrode 2592 are formed by using a conductive material having translucency. As the conductive material having translucency, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide added with gallium can be used. A membrane containing graphene can also be used. The graphene-containing film can be formed by reducing, for example, a film-like film containing graphene oxide. Examples of the method of reduction include a method of applying heat.

For example, a conductive material having translucency is formed on a substrate 2590 by a sputtering method, and then unnecessary parts are removed by various patterning techniques such as a photolithography method to form electrodes 2591 and 2592. be able to.

Further, as the material used for the insulating layer 2593, for example, an acrylic resin, an epoxy resin, a resin material having a siloxane bond, or an inorganic insulating material such as silicon oxide, silicon nitride nitride, or aluminum oxide can be used.

Further, an opening reaching the electrode 2591 is provided in the insulating layer 2593, and the wiring 2594 is electrically connected to the adjacent electrode 2591. Since the translucent conductive material can increase the aperture ratio of the touch panel, it can be suitably used for wiring 2594. Further, a material having a higher conductivity than the electrode 2591 and the electrode 2592 can be suitably used for the wiring 2594 because the electric resistance can be reduced.

The electrode 2592 extends in one direction, and a plurality of electrodes 2592 are provided in a stripe shape. Further, the wiring 2594 is provided so as to intersect with the electrode 2592.

A pair of electrodes 2591 are provided so as to sandwich one electrode 2592. Further, the wiring 2594 electrically connects the pair of electrodes 2591.

The plurality of electrodes 2591 do not necessarily have to be arranged in a direction orthogonal to one electrode 2592, and may be arranged so as to form an angle of more than 0 degrees and less than 90 degrees.

Further, the wiring 2598 is electrically connected to the electrode 2591 or the electrode 2592. Further, a part of the wiring 2598 functions as a terminal. As the wiring 2598, for example, a metal material such as aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy material containing the metal material can be used. it can.

The touch sensor 2595 may be protected by providing an insulating layer that covers the insulating layer 2593 and the wiring 2594.

Further, the connection layer 2599 electrically connects the wiring 2598 and the FPC2509 (2).

As the connecting layer 2599, an anisotropic conductive film (ACF: Anisotropic Conducive Film), an anisotropic conductive paste (ACP: Anisotropic Conducive Paste), or the like can be used.

<3-3. Explanation about touch panel>
Next, the details of the touch panel 2000 will be described with reference to FIGS. 21 and 22. 21 and 22 correspond to a cross-sectional view between the alternate long and short dash lines X3-X4 shown in FIG. 19 (A).

The touch panel 2000 shown in FIG. 21 has a configuration in which the display device 500 having the pixel 10 described in FIG. 10B and the touch sensor 2595 described in FIG. 20 are bonded together. The touch panel 2000 shown in FIG. 22 has a configuration in which the display device 500 having the pixel 10 described in FIG. 12B and the touch sensor 2595 described in FIG. 20 are bonded together.

Further, the touch panel 2000 shown in FIG. 21 includes an adhesive layer 2597 and an antireflection layer 2569, in addition to the display device 500 having the pixel 10 described in FIG. 10B and the touch sensor 2595 described in FIG. Have. Further, the touch panel 2000 shown in FIG. 22 includes an adhesive layer 2597 and an antireflection layer 2569, in addition to the display device 500 having the pixel 10 described in FIG. 12B and the touch sensor 2595 described in FIG. Have.

The adhesive layer 2597 is provided in contact with the wiring 2594. In the adhesive layer 2597, the substrate 2590 is attached to the substrate 90 so that the touch sensor 2595 overlaps the display device 500. Further, the adhesive layer 2597 is preferably translucent. Further, as the adhesive layer 2597, a thermosetting resin or an ultraviolet curable resin can be used. For example, an acrylic resin, a urethane resin, an epoxy resin, or a siloxane resin can be used.

The antireflection layer 2569 is provided at a position overlapping the pixel 10. As the antireflection layer 2569, for example, a circularly polarizing plate can be used.

Further, the touch panel 2000 is a so-called out-cell type touch panel. However, one aspect of the present invention is not limited to the above configuration, and may be an in-cell type touch panel or an on-cell type touch panel.

<2-4. Explanation of touch panel drive method>
Next, an example of the touch panel driving method will be described with reference to FIG. 23.

FIG. 23 (A) is a block diagram showing a configuration of a mutual capacitance type touch sensor. FIG. 23A shows a pulse voltage output circuit 2601 and a current detection circuit 2602. In FIG. 23A, the electrode 2621 to which the pulse voltage is applied is designated as X1-X6, and the electrode 2622 that detects the change in current is designated as Y1-Y6. Further, FIG. 23A shows a capacitance 2603 formed by overlapping the electrode 2621 and the electrode 2622. The functions of the electrode 2621 and the electrode 2622 may be interchanged with each other.

The pulse voltage output circuit 2601 is a circuit for sequentially applying pulses to the wiring of X1-X6. By applying a pulse voltage to the wiring of X1-X6, an electric field is generated between the electrode 2621 and the electrode 2622 forming the capacitance 2603. The proximity or contact of the object to be detected can be detected by utilizing the fact that the electric field generated between the electrodes causes a change in the mutual capacitance of the capacitance 2603 due to shielding or the like.

The current detection circuit 2602 is a circuit for detecting a change in the current in the wiring of Y1-Y6 due to a change in the mutual capacitance in the capacitance 2603. In the wiring of Y1-Y6, there is no change in the current value detected when there is no proximity or contact of the detected object, but the current value when the mutual capacitance decreases due to the proximity or contact of the detected object to be detected. Detects a decreasing change. The current may be detected by using an integrator circuit or the like.

Next, FIG. 23 (B) shows a timing chart of input / output waveforms in the mutual capacitance type touch sensor shown in FIG. 23 (A). In FIG. 23B, it is assumed that the detected object is detected in each matrix in one frame period. Further, FIG. 23B shows two cases, a case where the detected object is not detected (non-touch) and a case where the detected object is detected (touch). The wiring of Y1-Y6 shows a waveform with a voltage value corresponding to the detected current value.

A pulse voltage is sequentially applied to the wirings of X1-X6, and the waveform in the wirings of Y1-Y6 changes according to the pulse voltage. When there is no proximity or contact of the object to be detected, the waveform of Y1-Y6 changes uniformly according to the change of the voltage of the wiring of X1-X6. On the other hand, since the current value decreases at the location where the object to be detected is close or in contact with the object to be detected, the corresponding voltage value waveform also changes.

By detecting the change in mutual capacitance in this way, the proximity or contact of the object to be detected can be detected.

The configuration shown in this embodiment can be used in combination with the configurations shown in other embodiments as appropriate.

(Embodiment 4)
In the present embodiment, the metal oxide film of one aspect of the present invention will be described with reference to FIGS. 24 and 25.

<4-1. Metal oxide film>
The metal oxide film according to the present invention will be described below.

The metal oxide film preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc. In addition to them, aluminum, gallium, yttrium, tin and the like are preferably contained. Further, one or more kinds selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium and the like may be contained.

Here, consider the case where the metal oxide film is InMZnO having indium, element M, and zinc. The element M is aluminum, gallium, yttrium, tin, or the like. Examples of elements applicable to the other element M include boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. However, as the element M, a plurality of the above-mentioned elements may be combined in some cases.

<4-2. Structure of metal oxide film>
The metal oxide film is divided into a single crystal metal oxide film and other non-single crystal metal oxide films. Examples of the non-monocrystalline metal oxide film include CAAC-OS (c-axis aligned crystal oxide semiconductor), polycrystalline metal oxide film, nc-OS (nanocrystalline oxide semiconductor), and pseudo-amorphous metal oxide film (nanocrystalline oxide semiconductor). There are a-like OS: amorphous-like oxide semiconductor) and an amorphous metal oxide film.

CAAC-OS has a c-axis orientation and has a distorted crystal structure in which a plurality of nanocrystals are connected in the ab plane direction. The strain refers to a region in which a plurality of nanocrystals are connected, in which the orientation of the lattice arrangement changes between a region in which the lattice arrangement is aligned and a region in which another lattice arrangement is aligned.

Although nanocrystals are basically hexagonal, they are not limited to regular hexagons and may have non-regular hexagons. In addition, it may have a lattice arrangement such as a pentagon and a heptagon in distortion. In CAAC-OS, a clear grain boundary (also referred to as grain boundary) cannot be confirmed even in the vicinity of strain. That is, it can be seen that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because CAAC-OS can tolerate distortion due to the fact that the atomic arrangement is not dense in the ab plane direction and that the bond distance between atoms changes due to the substitution of metal elements. Conceivable.

Further, CAAC-OS is a layered crystal in which a layer having indium and oxygen (hereinafter, In layer) and a layer having elements M, zinc, and oxygen (hereinafter, (M, Zn) layer) are laminated. It tends to have a structure (also called a layered structure). Indium and the element M can be replaced with each other, and when the element M of the (M, Zn) layer is replaced with indium, it can be expressed as the (In, M, Zn) layer. Further, when the indium of the In layer is replaced with the element M, it can be expressed as the (In, M) layer.

The nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). In addition, nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film. Therefore, nc-OS may be indistinguishable from a-like OS and amorphous metal oxide film depending on the analysis method.

The a-like OS is a metal oxide film having a structure between nc-OS and an amorphous metal oxide film. The a-like OS has a void or low density region. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS.

The metal oxide film has various structures, and each has different properties. The metal oxide film of one aspect of the present invention has two or more of an amorphous metal oxide film, a polycrystalline metal oxide film, a-like OS, nc-OS, and CAAC-OS. May be good.

<4-3. Atomic number ratio of metal oxide film>
Next, with reference to FIGS. 24 (A), 24 (B), and 24 (C), a preferable range of atomic number ratios of indium, element M, and zinc contained in the metal oxide film according to the present invention will be described. To do. Note that FIGS. 24 (A), 24 (B), and 24 (C) do not describe the atomic number ratio of oxygen. Further, the respective terms of the atomic number ratios of indium, element M, and zinc contained in the metal oxide film are [In], [M], and [Zn].

In FIGS. 24 (A), 24 (B), and 24 (C), the broken line indicates the atomic number ratio of [In]: [M]: [Zn] = (1 + α) :( 1-α): 1. Line where (-1 ≤ α ≤ 1), [In]: [M]: [Zn] = (1 + α): (1-α): Line where the atomic number ratio is 2, [In]: [M] : [Zn] = (1 + α): (1-α): A line having an atomic number ratio of 3, [In]: [M]: [Zn] = (1 + α): (1-α): 4 atomic numbers It represents a line having a ratio and a line having an atomic number ratio of [In]: [M]: [Zn] = (1 + α) :( 1-α): 5.

The one-point chain line is a line having an atomic number ratio of [In]: [M]: [Zn] = 5: 1: β (β ≧ 0), [In]: [M]: [Zn] = 2: Line with an atomic number ratio of 1: β, [In]: [M]: [Zn] = 1: 1: Line with an atomic number ratio of β, [In]: [M]: [Zn] = 1: A line with an atomic number ratio of 2: β, [In]: [M]: [Zn] = 1: 3: a line with an atomic number ratio of β, and [In]: [M]: [Zn] = 1 : Represents a line having an atomic number ratio of 4: β.

Further, the atomic number ratio of [In]: [M]: [Zn] = 0: 2: 1 and its vicinity values shown in FIGS. 24 (A), 24 (B), and 24 (C). The metal oxide film tends to have a spinel-type crystal structure.

In addition, a plurality of phases may coexist in the metal oxide film (two-phase coexistence, three-phase coexistence, etc.). For example, when the atomic number ratio is a neighborhood value of [In]: [M]: [Zn] = 0: 2: 1, two phases of a spinel-type crystal structure and a layered crystal structure tend to coexist. Further, when the atomic number ratio is a neighborhood value of [In]: [M]: [Zn] = 1: 0: 0, two phases of a big bite-type crystal structure and a layered crystal structure tend to coexist. When a plurality of phases coexist in the metal oxide film, grain boundaries may be formed between different crystal structures.

The region A shown in FIG. 24 (A) shows an example of a preferable range of atomic number ratios of indium, element M, and zinc contained in the metal oxide film.

By increasing the content of indium in the metal oxide film, the carrier mobility (electron mobility) of the metal oxide film can be increased. Therefore, the metal oxide film having a high indium content has a higher carrier mobility than the metal oxide film having a low indium content.

On the other hand, when the content of indium and zinc in the metal oxide film is low, the carrier mobility is low. Therefore, when the atomic number ratio is [In]: [M]: [Zn] = 0: 1: 0 and its neighboring values (for example, region C shown in FIG. 24C), the insulating property is high. ..

Therefore, the metal oxide film of one aspect of the present invention may have the atomic number ratio shown in the region A of FIG. 24 (A), which tends to have a layered structure having high carrier mobility and few grain boundaries. preferable.

In particular, in the region B shown in FIG. 24 (B), an excellent metal oxide film that easily becomes CAAC-OS and has high carrier mobility can be obtained even in the region A.

CAAC-OS is a highly crystalline metal oxide film. On the other hand, in CAAC-OS, since a clear crystal grain boundary cannot be confirmed, it can be said that a decrease in electron mobility due to the crystal grain boundary is unlikely to occur. Further, since the crystallinity of the metal oxide film may decrease due to the mixing of impurities or the generation of defects, CAAC-OS can be said to be a metal oxide film having few impurities and defects (oxygen deficiency, etc.). Therefore, the metal oxide film having CAAC-OS has stable physical properties. Therefore, the metal oxide film having CAAC-OS is resistant to heat and has high reliability.

The region B includes [In]: [M]: [Zn] = 4: 2: 3 to 4.1, and values in the vicinity thereof. The neighborhood value includes, for example, [In]: [M]: [Zn] = 5: 3: 4. Further, the region B includes [In]: [M]: [Zn] = 5: 1: 6 and its neighboring values, and [In]: [M]: [Zn] = 5: 1: 7 and its vicinity. Includes neighborhood values.

The properties of the metal oxide film are not uniquely determined by the atomic number ratio. Even if the atomic number ratio is the same, the properties of the metal oxide film may differ depending on the formation conditions. For example, when a metal oxide film is formed by a sputtering apparatus, a film having an atomic number ratio deviating from the target atomic number ratio is formed. Further, depending on the substrate temperature at the time of film formation, the film [Zn] may be smaller than the target [Zn]. Therefore, the illustrated region is a region showing an atomic number ratio in which the metal oxide film tends to have a specific characteristic, and the boundary between the regions A and C is not strict.

<4-4. Transistor with metal oxide film>
Subsequently, a case where the metal oxide film is used for a transistor will be described.

By using the metal oxide film for the transistor, carrier scattering and the like at the grain boundaries can be reduced, so that a transistor with high field effect mobility can be realized. Moreover, a highly reliable transistor can be realized.

Further, it is preferable to use a metal oxide film having a low carrier density for the transistor. When the carrier density of the metal oxide film is lowered, the impurity concentration in the metal oxide film may be lowered to lower the defect level density. In the present specification and the like, a low impurity concentration and a low defect level density is referred to as high-purity intrinsic or substantially high-purity intrinsic. For example, metal oxide films have a carrier density of less than 8 × 10 ¹¹ / cm ³ , preferably less than 1 × 10 ¹¹ / cm ³ , more preferably less than 1 × 10 ¹⁰ / cm ³ , and 1 × ^10-9. It may be / cm ³ or more.

In addition, a metal oxide film having high-purity intrinsicity or substantially high-purity intrinsicity has a low defect level density, so that the trap level density may also be low.

In addition, the charge captured at the trap level of the metal oxide film takes a long time to disappear, and may behave as if it were a fixed charge. Therefore, a transistor in which a channel region is formed on a metal oxide film having a high trap level density may have unstable electrical characteristics.

Therefore, in order to stabilize the electrical characteristics of the transistor, it is effective to reduce the impurity concentration in the metal oxide film. Further, in order to reduce the impurity concentration in the metal oxide film, it is preferable to reduce the impurity concentration in the adjacent film. Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon and the like.

<4-5. Impurities in metal oxide film>
Here, the influence of each impurity in the metal oxide film will be described.

When silicon or carbon, which is one of the Group 14 elements, is contained in the metal oxide film, a defect level is formed in the metal oxide film. Therefore, the concentration of silicon and carbon in the metal oxide film and the concentration of silicon and carbon near the interface with the metal oxide film (concentration obtained by secondary ion mass spectrometry (SIMS)) are determined. 2, 2 × 10 ¹⁸ atoms / cm ³ or less, preferably 2 × 10 ¹⁷ atoms / cm ³ or less.

Further, when the metal oxide film contains an alkali metal or an alkaline earth metal, a defect level may be formed and carriers may be generated. Therefore, a transistor using a metal oxide film containing an alkali metal or an alkaline earth metal tends to have a normally-on characteristic. Therefore, it is preferable to reduce the concentration of alkali metal or alkaline earth metal in the metal oxide film. Specifically, the concentration of the alkali metal or alkaline earth metal in the metal oxide film obtained by SIMS is set to 1 × 10 ¹⁸ atoms / cm ³ or less, preferably 2 × 10 ¹⁶ atoms / cm ³ or less.

Further, hydrogen contained in the metal oxide film reacts with oxygen bonded to a metal atom to become water, which may form an oxygen deficiency. When hydrogen enters the oxygen deficiency, electrons that are carriers may be generated. In addition, a part of hydrogen may be combined with oxygen that is bonded to a metal atom to generate an electron as a carrier. Therefore, a transistor using a metal oxide film containing hydrogen tends to have a normally-on characteristic. Therefore, it is preferable that hydrogen in the metal oxide film is reduced as much as possible. Specifically, in the metal oxide film, the hydrogen concentration obtained by SIMS is less than 1 × 10 ²⁰ atoms / cm ³ , preferably less than 1 × 10 ¹⁹ atoms / cm ³ , more preferably 5 × 10 ¹⁸ atoms /. It is less than cm ³ , more preferably less than 1 × 10 ¹⁸ atoms / cm ³ .

By using a metal oxide film in which impurities are sufficiently reduced in the channel region of the transistor, stable electrical characteristics can be imparted.

<4-6. Band diagram>
Subsequently, a case where the metal oxide film has a two-layer structure or a three-layer structure will be described. The laminated structure of the metal oxide film S1, the metal oxide film S2, and the metal oxide film S3, the band diagram of the insulating film in contact with the laminated structure, the laminated structure of the metal oxide film S2 and the metal oxide film S3, and A band diagram of the insulating film in contact with the laminated structure, a laminated structure of the metal oxide film S1 and the metal oxide film S2, and a band diagram of the insulating film in contact with the laminated structure will be described with reference to FIG.

FIG. 25A is an example of a band diagram in the film thickness direction of a laminated structure having an insulating film I1, a metal oxide film S1, a metal oxide film S2, a metal oxide film S3, and an insulating film I2. Further, FIG. 25B is an example of a band diagram in the film thickness direction of the laminated structure having the insulating film I1, the metal oxide film S2, the metal oxide film S3, and the insulating film I2. Further, FIG. 25C is an example of a band diagram in the film thickness direction of the laminated structure having the insulating film I1, the metal oxide film S1, the metal oxide film S2, and the insulating film I2. In the band diagram, the energy levels (Ec) at the lower ends of the conduction bands of the insulating film I1, the metal oxide film S1, the metal oxide film S2, the metal oxide film S3, and the insulating film I2 are shown for easy understanding. Shown.

The metal oxide film S1 and the metal oxide film S3 have an energy level at the lower end of the conduction band closer to the vacuum level than the metal oxide film S2, and typically, the energy at the lower end of the conduction band of the metal oxide film S2. The difference between the level and the energy level at the lower end of the conduction band of the metal oxide film S1 and the metal oxide film S3 is 0.15 eV or more, 0.5 eV or more, and 2 eV or less, or 1 eV or less. preferable. That is, when the difference between the electron affinity of the metal oxide film S1 and the metal oxide film S3 and the electron affinity of the metal oxide film S2 is 0.15 eV or more, 0.5 eV or more, and 2 eV or less, or 1 eV or less. It is preferable to have.

As shown in FIGS. 25 (A), 25 (B), and 25 (C), in the metal oxide film S1, the metal oxide film S2, and the metal oxide film S3, the energy level at the lower end of the conduction band is It changes gently. In other words, it can also be said to be continuously changing or continuously joining. In order to have such a band diagram, the defect quasi of the mixed layer formed at the interface between the metal oxide film S1 and the metal oxide film S2 or the interface between the metal oxide film S2 and the metal oxide film S3 The density should be low.

Specifically, the metal oxide film S1 and the metal oxide film S2, and the metal oxide film S2 and the metal oxide film S3 have a common element (main component) other than oxygen, so that the defect level is high. A mixed layer with low density can be formed. For example, when the metal oxide film S2 is an In-Ga-Zn metal oxide film, the metal oxide film S1 and the metal oxide film S3 are the In-Ga-Zn metal oxide film and the Ga-Zn metal oxide film. , Gallium oxide or the like may be used.

At this time, the main path of the carrier is the metal oxide film S2. Since the defect level density at the interface between the metal oxide film S1 and the metal oxide film S2 and the interface between the metal oxide film S2 and the metal oxide film S3 can be lowered, carrier conduction due to interfacial scattering can be achieved. The effect is small and a high on-current can be obtained.

When electrons are trapped at the trap level, the trapped electrons behave like a fixed charge, and the threshold voltage of the transistor shifts in the positive direction. By providing the metal oxide film S1 and the metal oxide film S3, the trap level can be kept away from the metal oxide film S2. With this configuration, it is possible to prevent the threshold voltage of the transistor from shifting in the positive direction.

As the metal oxide film S1 and the metal oxide film S3, a material having a sufficiently low conductivity as compared with the metal oxide film S2 is used. At this time, the metal oxide film S2, the interface between the metal oxide film S2 and the metal oxide film S1, and the interface between the metal oxide film S2 and the metal oxide film S3 mainly function as a channel region. For example, as the metal oxide film S1 and the metal oxide film S3, the metal oxide film having the atomic number ratio shown in the region C where the insulating property is high may be used in FIG. 24C. In the region C shown in FIG. 24 (C), [In]: [M]: [Zn] = 0: 1: 0 and its neighboring values, [In]: [M]: [Zn] = 1: It shows the atomic number ratio of 3: 2 and its neighboring values, [In]: [M]: [Zn] = 1: 3: 4, and its neighboring values.

In particular, when a metal oxide film having an atomic number ratio shown in region A is used for the metal oxide film S2, the metal oxide film S1 and the metal oxide film S3 have [M] / [In] of 1 or more. It is preferable to use two or more metal oxide films. Further, as the metal oxide film S3, it is preferable to use a metal oxide film having [M] / ([Zn] + [In]) of 1 or more, which can obtain sufficiently high insulating properties.

The configuration shown in this embodiment can be used in combination with the configurations shown in other embodiments as appropriate.

(Embodiment 5)
In the present embodiment, the configuration of the CAC (Cloud Aligned Company) -OS that can be used for the transistor disclosed in one aspect of the present invention will be described.

The CAC-OS is, for example, a composition of a material in which the elements constituting the metal oxide film are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or a size close thereto. In the following, one or more metal elements are unevenly distributed in the metal oxide film, and the region having the metal elements is 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or in the vicinity thereof. The state of being mixed by size is also called mosaic or patch.

The metal oxide film preferably contains at least indium. In particular, it preferably contains indium and zinc. Also, in addition to them, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lantern, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium, etc. One or more selected from the above may be included.

For example, CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide may be particularly referred to as CAC-IGZO in CAC-OS) is indium oxide (hereinafter, InO). _X1 (X1 is a real number greater than 0), or indium zinc oxide (hereinafter, In _X2 Zn _Y2 O _Z2 (X2, Y2, and Z2 are real numbers greater than 0)) and gallium. With oxide (hereinafter, GaO _X3 (X3 is a real number larger than 0)) or gallium zinc oxide (hereinafter, Ga _X4 Zn _Y4 O _Z4 (X4, Y4, and Z4 are real numbers larger than 0)) The material is separated into a mosaic-like structure, and the mosaic-like InO _X1 or In _X2 Zn _Y2 O _Z2 is uniformly distributed in the film (hereinafter, also referred to as cloud-like). is there.

That is, CAC-OS is a composite metal oxide film having a structure in which a region containing GaO _X3 as a main component and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component are mixed. .. In the present specification, for example, the atomic number ratio of In to the element M in the first region is larger than the atomic number ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that of region 2.

In addition, IGZO is a common name, and may refer to one compound consisting of In, Ga, Zn, and O. As a typical example, it is represented by InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In _{(1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (-1 ≦ x0 ≦ 1, m0 is an arbitrary number). Crystalline compounds can be mentioned.

The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have a c-axis orientation and are connected without being oriented on the ab plane.

On the other hand, CAC-OS relates to the material composition of the metal oxide film. CAC-OS is a region that is partially observed as nanoparticles containing Ga as a main component and nanoparticles containing In as a main component in a material composition containing In, Ga, Zn, and O. The regions observed in the shape are randomly dispersed in a mosaic pattern. Therefore, in CAC-OS, the crystal structure is a secondary element.

It should be noted that CAC-OS does not include a laminated structure of two or more types of films having different compositions. For example, a structure consisting of two layers, a film containing In as a main component and a film containing Ga as a main component, is not included.

It should be noted that a clear boundary may not be observed between the region containing GaO _X3 as the main component and the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as the main component.

Instead of gallium, select from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lantern, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium. When one or more of these are contained, CAC-OS has a region observed in the form of nanoparticles containing the metal element as a main component and a nano having In as a main component. The regions observed in the form of particles refer to a configuration in which the regions are randomly dispersed in a mosaic pattern.

The CAC-OS can be formed by a sputtering method, for example, under the condition that the substrate is not intentionally heated. When CAC-OS is formed by a sputtering method, one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as the film forming gas. Good. Further, the lower the flow rate ratio of the oxygen gas to the total flow rate of the film-forming gas at the time of film formation is preferable. For example, the flow rate ratio of the oxygen gas is preferably 0% or more and less than 30%, preferably 0% or more and 10% or less. ..

CAC-OS is characterized by the fact that no clear peak is observed when measured using the θ / 2θ scan by the Out-of-plane method, which is one of the X-ray diffraction (XRD) measurement methods. Have. That is, from the X-ray diffraction, it can be seen that the orientation of the measurement region in the ab plane direction and the c-axis direction is not observed.

Further, CAC-OS has a ring-shaped high-brightness region and a plurality of bright regions in the ring region in an electron diffraction pattern obtained by irradiating an electron beam (also referred to as a nanobeam electron beam) having a probe diameter of 1 nm. A point is observed. Therefore, from the electron diffraction pattern, it can be seen that the crystal structure of CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.

Further, for example, in CAC-OS in In-Ga-Zn oxide, a region in which GaO _X3 is a main component is obtained by EDX mapping acquired by using energy dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectroscopy). And, it can be confirmed that In _X2 Zn _Y2 O _Z2 or the region containing InO _X1 as a main component has a structure in which they are unevenly distributed and mixed.

CAC-OS has a structure different from that of the IGZO compound in which metal elements are uniformly distributed, and has properties different from those of the IGZO compound. That is, the CAC-OS is phase-separated into a region containing GaO _X3 or the like as a main component and a region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component, and a region containing each element as a main component. Has a mosaic-like structure.

Here, the region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component is a region having higher conductivity than the region in which GaO _X3 or the like is the main component. That is, the conductivity as a metal oxide film is exhibited by the carrier flowing through the region where In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component. Therefore, a high field effect mobility (μ) can be realized by distributing the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as the main component in the metal oxide film in a cloud shape.

On the other hand, the region in which GaO _X3 or the like is the main component is a region having higher insulating property than the region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component. That is, since the region containing GaO _X3 or the like as the main component is distributed in the metal oxide film, leakage current can be suppressed and good switching operation can be realized.

Therefore, when CAC-OS is used for a semiconductor element, the insulation property caused by GaO _{X3 and the} like and the conductivity caused by In _X2 Zn _Y2 O _Z2 or InO _X1 act in a complementary manner, resulting in high efficiency. On-current ( _Ion ) and high field-effect mobility (μ) can be achieved.

Further, the semiconductor element using CAC-OS has high reliability. Therefore, CAC-OS is most suitable for various semiconductor devices such as displays.

The configuration shown in this embodiment can be used in combination with the configurations shown in other embodiments as appropriate.

(Embodiment 6)
In the present embodiment, the display module and the electronic device having the display device of one aspect of the present invention will be described with reference to FIGS. 26 to 28.

<6-1. Display module>
The display module 8000 shown in FIG. 26 has a touch panel 8004 to which the FPC 8003 is connected, a display panel 8006 to which the FPC 8005 is connected, a frame 8009, a printed circuit board 8010, and a battery 8011 between the upper cover 8001 and the lower cover 8002.

The display device of one aspect of the present invention can be used, for example, on the display panel 8006. As a result, a high-brightness image can be displayed with low power consumption.

The shape and dimensions of the upper cover 8001 and the lower cover 8002 can be appropriately changed according to the sizes of the touch panel 8004 and the display panel 8006.

The touch panel 8004 can be used by superimposing a resistive film type or capacitance type touch panel on the display panel 8006. It is also possible to provide the opposite substrate (sealing substrate) of the display panel 8006 with a touch panel function. Further, it is also possible to provide an optical sensor in each pixel of the display panel 8006 to form an optical touch panel.

In addition to the protective function of the display panel 8006, the frame 8009 has a function as an electromagnetic shield for blocking electromagnetic waves generated by the operation of the printed circuit board 8010. Further, the frame 8009 may have a function as a heat radiating plate.

The printed circuit board 8010 has a power supply circuit, a signal processing circuit for outputting a video signal and a clock signal. The power source for supplying electric power to the power supply circuit may be an external commercial power source or a separately provided battery 8011. The battery 8011 can be omitted when a commercial power source is used.

Further, the display module 8000 may be additionally provided with members such as a polarizing plate, a retardation plate, and a prism sheet.

<6-2. Electronic equipment>
27 (A) to 27 (E) and 28 (A) to 28 (D) are diagrams showing electronic devices. These electronic devices include a housing 9000, a display unit 9001, a camera 9002, a speaker 9003, an operation key 9005 (including a power switch or an operation switch), a connection terminal 9006, and a sensor 9007 (force, displacement, position, speed, acceleration). , Angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell or infrared ), Microphone 9008 and the like.

The electronic devices shown in FIGS. 27 (A) to 27 (E) and 28 (A) to 28 (D) can have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, etc., a function to control processing by various software (programs), Wireless communication function, function to connect to various computer networks using wireless communication function, function to transmit or receive various data using wireless communication function, read and display programs or data recorded on recording media It can have a function of displaying on a unit, and the like. The functions of the electronic devices shown in FIGS. 27 (A) to 27 (E) and 28 (A) to 28 (D) are not limited to these, and may have other functions. ..

Details of the electronic devices shown in FIGS. 27 (A) to 27 (E) and 28 (A) to 28 (D) will be described below.

FIG. 27 (A) is a perspective view showing the television device 9100. The television device 9100 can have a large screen on the display unit 9001. For example, it is possible to incorporate a display unit 9001 of 50 inches or more, 80 inches or more, or 100 inches or more.

By using the display device of one aspect of the present invention for the display unit 9001 included in the television device 9100, a high-brightness image can be displayed with low power consumption.

27 (B) shows a mobile information terminal 9101, FIG. 27 (C) shows a mobile information terminal 9102, FIG. 27 (D) shows a mobile information terminal 9103, and FIG. 27 (E) shows a mobile information terminal 9104. It is a perspective view.

The mobile information terminal 9101 shown in FIG. 27 (B) has one or more functions selected from, for example, a telephone, a notebook, an information browsing device, and the like. Specifically, it can be used as a smartphone. Although not shown, the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. Further, the mobile information terminal 9101 can display character and image information on a plurality of surfaces thereof. For example, three operation buttons 9050 (also referred to as operation icons or simply icons) can be displayed on one surface of the display unit 9001. Further, the information 9051 indicated by the broken line rectangle can be displayed on another surface (for example, a side surface) of the display unit 9001. As an example of information 9051, a display notifying an incoming call of e-mail, SNS (social networking service), telephone, etc., a title of e-mail, SNS, etc., a sender name of e-mail, SNS, etc., date and time, time. , Battery level, received signal strength, etc. Alternatively, the operation button 9050 or the like may be displayed instead of the information 9051 at the position where the information 9051 is displayed. Further, the display unit 9001 included in the mobile information terminal 9101 has a curved surface in part.

By using the display device of one aspect of the present invention for the display unit 9001 included in the portable information terminal 9101, a high-brightness image can be displayed with low power consumption.

The mobile information terminal 9102 shown in FIG. 27 (C) has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, the user of the mobile information terminal 9102 can check the display (here, information 9053) with the mobile information terminal 9102 stored in the chest pocket of the clothes. Specifically, the telephone number or name of the caller of the incoming call is displayed at a position that can be observed from above the mobile information terminal 9102. The user can check the display and determine whether or not to receive the call without taking out the mobile information terminal 9102 from the pocket. Further, the display unit 9001 included in the mobile information terminal 9102 has a curved surface in part.

By using the display device of one aspect of the present invention for the display unit 9001 included in the portable information terminal 9102, a high-brightness image can be displayed with low power consumption.

The mobile information terminal 9103 shown in FIG. 27 (D) has a configuration in which the display unit 9001 does not have a curved surface, unlike the mobile information terminals 9101 and 9102 shown above. By using the display device of one aspect of the present invention for the display unit 9001 included in the portable information terminal 9103, a high-brightness image can be displayed with low power consumption.

Further, in the mobile information terminal 9104 shown in FIG. 27 (E), the display unit 9001 is curved. Further, as shown in FIG. 27 (E), the mobile information terminal 9104 is provided with a camera 9002, which has a function of shooting a still image, a function of shooting a moving image, and a recording medium (external or built in the camera). It is preferable to have a function of saving, a function of displaying the captured image on the display unit 9001, and the like. By using the display device of one aspect of the present invention for the display unit 9001 included in the portable information terminal 9104, a high-brightness image can be displayed with low power consumption.

28 (A) and 28 (B) are perspective views showing a mobile information terminal 9105, and FIG. 28 (C) is a perspective view showing a camera 9106. FIG. 28D is a diagram showing a case where the display device of one aspect of the present invention is mounted as an in-vehicle display.

In the mobile information terminal 9105 shown in FIGS. 28A and 28B, a housing 9000 is connected by a hinge portion 9055. The mobile information terminal 9105 can open the housing 9000 as shown in FIG. 28 (B) from the folded state as shown in FIG. 28 (A). For example, document information can be displayed on the display unit 9001, and it can also be used as an electronic book terminal. It is also possible to display a still image or a moving image on the display unit 9001. As described above, the portable information terminal 9105 is excellent in versatility because it can be folded when it is carried. Although not shown, the mobile information terminal 9105 may be provided with a speaker 9003, an operation key 9005, a connection terminal 9006, a microphone 9008, and the like.

By using the display device of one aspect of the present invention for the display unit 9001 included in the portable information terminal 9105, a high-brightness image can be displayed with low power consumption.

The camera 9106 shown in FIG. 28C is provided with a removable lens 9056, and a still image or a moving image can be captured by pressing the shutter button 9057. The lens 9056 and the housing 9000 may be integrated. Further, the display unit 9001 has a function as a touch panel, and it is possible to take an image by touching the display unit 9001. Further, the camera 9106 can be separately equipped with a strobe device, a viewfinder, and the like. Alternatively, these may be incorporated in the housing 9000.

By using the display device of one aspect of the present invention for the display unit 9001 included in the camera 9106, a high-luminance image can be displayed with low power consumption.

The display unit 9001 shown in FIG. 28D can display navigation information, a speedometer or tachometer, a mileage, a refueling amount, a gear state, an air conditioner setting, and various other information. The display items and layout of the display can be changed as appropriate according to the preference of the user.

By using the display device of one aspect of the present invention in the display unit 9001 having a function as an in-vehicle display, a high-brightness image can be displayed with low power consumption.

The electronic device described in the present embodiment is characterized by having a display unit for displaying some information. However, the semiconductor device according to one aspect of the present invention can also be applied to an electronic device having no display unit.

The configuration shown in this embodiment can be used in combination with the configurations shown in other embodiments as appropriate.

In this embodiment, the display device 500 having the configuration shown in FIG. 1 was manufactured, and the display result of the display device 500 was evaluated. The pixel 10 has the configuration shown in FIG. 4 or the configuration shown in FIG.

For the gate driver circuit units 504a and 504b, the clock frequency was 29.06 kHz and the signal voltage was -5 V to 17 V. For the source driver circuit section 506a, the potential of the video signal was 1 V to 17 V, the horizontal period was 8.6 μs, and the inverting drive method was source line rotation. For the source driver circuit section 506b, the potential of the video signal was 1 V to 8 V, and the horizontal period was 8.6 μs. The potential of the wiring TCOM shown in FIG. 2 was 4.0V, the potential of the wiring CSCOM was 4.0V, the potential of the wiring anode was 10V, and the potential of the wiring CATHODE was −3.0V.

Further, a photograph was taken using Canon's EOS 70D (EF-S18-55 mm F3.5-5.6 IS), and the photograph was displayed as an image on the display device 500. The ISO sensitivity was 400, the shutter speed was 1/30, and the F value was 1 / 5.6V.

29 (A) and 29 (B) show display results when the display device 500 is driven under the above conditions with the pixel 10 as the configuration shown in FIG. FIG. 29 (A) is a display result when the display is performed using the display element 12, and FIG. 29 (B) is a display result when the display is performed using the display element 14.

30 (A) and 30 (B) show display results when the display device 500 is driven under the above conditions with the pixel 10 as the configuration shown in FIG. FIG. 30 (A) is a display result when the display is performed using the display element 12, and FIG. 30 (B) is a display result when the display is performed using the display element 14.

As shown in FIGS. 29 (A) and 29 (B) and FIGS. 30 (A) and 30 (B), it was confirmed that the display device 500 can display an image having good display quality.

10 pixels 12 Display element 12B Display element 12Bd Display area 12d Display area 12G Display element 12Gd Display area 12R Display element 12Rd Display area 12Wd Display area 14 Display element 14B Display element 14Bd Display area 14d Display area 14G Display element 14Gd Display area 14R Display element 14Rd display area 14Wd display area 16 capacitive element 20 arithmetic circuit unit 21 control circuit unit 22 shift register circuit unit 23 shift register circuit unit 30 substrate 31 conductive film 32 insulating film 34 insulating film 36 conductive film 38 conductive film 40 insulating film 42 conductive film 44 Insulation film 48 Insulation film 50a Metal oxide film 50b Metal oxide film 54 Insulation film 60 Insulation film 62 Insulation film 68 Insulation film 69 Colored film 70 Conductive 72 Insulation film 74 Structure 76 EL layer 78 Conductive 80 Substrate 82 Seal Stopper 90 Substrate 92 Conductive 94 Alignment film 96 Liquid crystal layer 98 Alignment film 100 Coloring film 104 Overcoat film 255 Gradation 500 Display device 502 Pixel part 504a Gate driver circuit part 504b Gate driver circuit part 506a Source driver Circuit part 506b Source driver Circuit part 508 External circuit 2000 Touch panel 2509 FPC
2511 Wiring 2519 Terminal 2569 Anti-reflection layer 2590 Board 2591 Electrode 2592 Electrode 2593 Insulation layer 2594 Wiring 2595 Touch sensor 2597 Adhesive layer 2598 Wiring 2599 Connection layer 2601 Pulse voltage output circuit 2602 Current detection circuit 2603 Capacity 2621 Electrode 2622 Electrode 8000 Display module 8001 Upper Cover 8002 Bottom cover 8003 FPC
8004 touch panel 8005 FPC
8006 Display panel 8009 Frame 8010 Print board 8011 Battery 9000 Housing 9001 Display 9002 Camera 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9050 Operation button 9051 Information 9052 Information 9053 Information 9054 Information 9055 Hing part 9056 Lens 9057 Shutter button 9100 Television device 9101 Mobile information terminal 9102 Mobile information terminal 9103 Mobile information terminal 9104 Mobile information terminal 9105 Mobile information terminal 9106 Camera

Claims (5)

It has a first pixel, a second pixel, a third pixel, and a first circuit.
The first pixel has a first display area, a second display area, a third display area, and a fourth display area.
The second pixel has a fifth display area, a sixth display area, a seventh display area, and an eighth display area.
The third pixel has a ninth display area, a tenth display area, an eleventh display area, and a twelfth display area.
The first to third, fifth to seventh, and ninth to eleventh display regions include display elements having a light emitting layer.
The fourth, eighth, and twelfth display regions include display elements having a liquid crystal layer.
The first to third display areas have a function of emitting light of different colors from each other.
The fourth, fifth, and ninth display areas have a function of emitting light of the same color as the light of the color emitted by the first display area.
The sixth, eighth, and tenth display areas have a function of emitting light of the same color as the light of the color emitted by the second display area.
The seventh, eleventh, and twelfth display areas have a function of emitting light of the same color as the light of the color emitted by the third display area.
The first circuit has a function of generating the first display data, and has a function of generating the first display data.
The first circuit has a function of generating a second display data based on the first display data.
The first display data has information on the gradation of the brightness of the light emitted from the first to third, fifth to seventh, and ninth to eleventh display regions.
The second display data is from the fourth display area calculated based on the information regarding the gradation of the brightness of the light emitted from the first display area of the first display data. It has information about the gradation of the brightness of the emitted light,
The second display data is derived from the eighth display area calculated based on the information regarding the gradation of the brightness of the light emitted from the sixth display area of the first display data. It has information about the gradation of the brightness of the emitted light,
The second display data is derived from the twelfth display area calculated based on the information regarding the gradation of the brightness of the light emitted from the eleventh display area of the first display data. A display device having information on the gradation of the brightness of the emitted light. In claim 1 ,
The first display area has a function of emitting blue light and has a function of emitting blue light.
The second display area has a function of emitting green light and has a function of emitting green light.
The third display area is a display device having a function of emitting red light. In claim 1 or 2 ,
The gradation of the brightness of the light emitted from the fourth display area is equal to the gradation of the brightness of the light emitted from the first display area.
The gradation of the brightness of the light emitted from the eighth display area is equal to the gradation of the brightness of the light emitted from the sixth display area.
A display device characterized in that the gradation of the brightness of light emitted from the twelfth display region is equal to the gradation of the brightness of light emitted from the eleventh display region. The display device according to any one of claims 1 to 3 .
With a touch sensor,
A display module that features that. The display device according to any one of claims 1 to 3 , or the display module according to claim 4 .
With an operation key or battery,
An electronic device characterized by that.