JP6754946B2 - Wavelength converters, projectors and luminaires - Google Patents

Description

The present disclosure relates to a wavelength conversion member, and a projector and a lighting device including the wavelength conversion member.

Conventionally, in projectors and lighting devices, excitation light emitted from a solid-state light source such as a semiconductor laser or a light emitting diode is wavelength-converted by a phosphor layer of a wavelength conversion member to obtain light of a desired color. ing.

Further, in such a wavelength conversion member, a metal reflection layer made of a metal such as Ag (silver) or Al (aluminum) is provided between the phosphor layer and the substrate to improve the light extraction efficiency of the wavelength conversion member. Is being done.

Japanese Unexamined Patent Publication No. 2016-58638

However, if the wavelength conversion member is provided with the metal reflection layer, there may be a problem that the reflection efficiency of the metal reflection layer is lowered due to migration. When such a decrease in reflection efficiency occurs, the light extraction efficiency of the wavelength conversion member decreases.

An object of the present disclosure is to provide a wavelength conversion member in which the reflection efficiency of the metal reflective layer is less likely to decrease due to migration. It is also an object of the present disclosure to provide a highly durable projector and lighting device equipped with such a wavelength conversion member.

In the wavelength conversion member according to one aspect of the present disclosure, a metal reflective layer, a brightening reflective layer, a phosphor layer, and an antireflection layer are formed in this order on a substrate. The hyperrefractive layer is formed in the entire region where the metal reflective layer is formed, and has a low refractive index layer and a high refractive index layer in order from the substrate side. The phosphor layer is formed in a part of the region where the metal reflection layer is formed. The antireflection layer is formed in the entire region where the metal reflection layer is formed, and has a first low refractive index layer, a high refractive index layer, and a second low refractive index layer in order from the substrate side.

The projector according to one aspect of the present disclosure includes the wavelength conversion member.

The lighting device according to one aspect of the present disclosure includes the wavelength conversion member.

In the wavelength conversion member according to the present disclosure, since the antireflection layer and the antireflection layer are formed in the entire region where the metal reflection layer is formed, the reflection efficiency of the metal reflection layer is unlikely to decrease due to migration.

Further, since the projector and the lighting device according to the present disclosure include the wavelength conversion member, the durability is high.

Perspective view which shows the wavelength conversion member which concerns on Embodiment 1. 2-2 sectional view in FIG. 1 showing a wavelength conversion member according to the first embodiment. Configuration diagram showing the projector according to the first embodiment Perspective view which shows the wavelength conversion member which concerns on Embodiment 2. Configuration diagram showing the lighting device according to the second embodiment

Hereinafter, embodiments of the wavelength conversion member, projector, and lighting device according to the present disclosure will be described with reference to the drawings. It should be noted that all the embodiments disclosed below are examples, and there is no intention of imposing restrictions on the wavelength conversion member, the projector, and the lighting device according to the present disclosure.

Further, in the embodiment disclosed below, more detailed description than necessary may be omitted. For example, a detailed description of a well-known matter or a duplicate description of a substantially identical configuration may be omitted. This is to facilitate the understanding of those skilled in the art by avoiding unnecessarily redundant explanations.

[Embodiment 1]
(Wavelength conversion member)
FIG. 1 is a perspective view showing a wavelength conversion member according to the first embodiment. The wavelength conversion member 10 according to the first embodiment shown in FIG. 1 is a phosphor wheel for a projector, and has an arcuate phosphor layer 15 on one main surface (upper surface) side of a disk-shaped substrate 11. To be equipped. The substrate 11 is provided with an arcuate opening 11a, and the opening 11a and the phosphor layer 15 form an annular silhouette. Since the substrate 11 is provided with the opening 11a, a part of the excitation light emitted from the solid-state light source 111a described later toward the wavelength conversion member 10 passes through the substrate 11 through the opening 11a.

FIG. 2 is a sectional view taken along line 2-2 in FIG. 1 showing a wavelength conversion member according to the first embodiment. As shown in FIG. 2, the wavelength conversion member 10 includes a substrate 11, an adhesive layer 12, a metal reflective layer 13, a brightening layer 14, a phosphor layer 15, and an antireflection layer 16. The adhesive layer 12, the metal reflective layer 13, the brightening reflective layer 14, the phosphor layer 15, and the antireflection layer 16 are formed on the substrate 11 in that order.

The substrate 11 has a function of supporting the phosphor layer 15 and a function of dissipating the heat generated in the phosphor layer 15 to the outside. Examples of the material of the substrate 11 include glass, quartz, GaN (gallium nitride), sapphire, silicon, and resin. Examples of the resin include PEN (polyethylene terephthalate) and PET (polyethylene terephthalate).

The adhesive layer 12 has a function of enhancing the adhesiveness of the metal reflective layer 13 to the substrate 11. The adhesive layer 12 is made of, for example, Ti (titanium) and is formed over the entire upper surface of the substrate 11. The adhesive layer 12 is not an essential layer in the present embodiment.

The metal reflective layer 13 has a function of reflecting the excitation light transmitted through the phosphor layer 15 and the fluorescence emitted from the phosphor layer 15 to the substrate 11 side (lower side) to the opposite side (upper side) of the substrate 11. Has. In the present embodiment, the metal reflective layer 13 is made of Ag and is formed over the entire upper surface of the adhesive layer 12. The metal reflective layer 13 is not limited to Ag and may be formed of another metal such as Al. However, Ag is particularly suitable because it has a high reflectance.

The hyperreflective layer 14 has a function of reducing light scattering loss generated at the interface between the metal reflective layer 13 and the antireflection layer 16 and a function of preventing a decrease in reflectance due to the angle dependence of incident light. The hyperreflective layer 14 is formed over the entire region where the metal reflective layer 13 is formed, specifically, the entire upper surface of the metal reflective layer 13.

The high-refractive-index layer 14 is a multilayer film in which low-refractive-index layers and high-refractive-index layers are alternately laminated in multiple layers. It is composed of two layers of 14b. The refractive index of each layer is, for example, 1.5 or less for the low refractive index layer 14a at the d line (587.6 nm) and 1.5 or more for the high refractive index layer 14b at the d line (587.6 nm). The reflective layer 14 is not limited to the one composed of two layers, and if it is a multilayer film in which low refractive index layers and high refractive index layers are alternately laminated in multiple layers, the low refractive index layer 14a and A layer other than the high refractive index layer 14b may be included.

Examples of the material of the low refractive index layer 14a include oxides of relatively light elements such as SiO ₂ (silicon dioxide) and Al ₂ O ₃ (aluminum oxide). Further, the material of the low refractive index layer 14a may be a nitride such as AlN (aluminum nitride), AlGaN (aluminum nitride gallium), and AlInN (aluminum nitride indium).

Examples of the material of the high refractive index layer 14b include Nb ₂ O ₅ (niobium pentoxide), TiO ₂ (titanium dioxide), Ti ₃ O ₅ (titanium pentoxide), ZnO (zirconium oxide), and ZrO ₂ (zirconium dioxide). , Ta ₂ O ₅ (tantalum pentoxide), CeO ₂ (cerium oxide) and other oxides of relatively heavy elements. Further, the material of the high refractive index layer 14b may be a nitride such as AlON (aluminum nitride) or GaN.

As a preferred example, in the present embodiment, the low refractive index layer 14a is formed of SiO ₂ , and the high refractive index layer 14b is formed of Nb ₂ O ₅ .

The low refractive index layer 14a and the high refractive index layer 14b can be formed by a known method. Known methods include, for example, electron beam deposition, resistance heating vapor deposition, reactive plasma deposition, ion-assisted deposition, sputtering, metalorganic vapor phase growth, molecular beam epitaxy, pulsed laser deposition or ions. Plating etc.

The phosphor layer 15 has a function of converting the excitation light emitted from the solid-state light source 111a toward the wavelength conversion member into fluorescence. The phosphor layer 15 is formed only in a part of the region where the metal reflection layer 13 is formed. Specifically, it is formed on the upper surface of the reflective layer 14 in an arc shape along the outer peripheral edge of the substrate 11.

The phosphor layer 15 has a sealing layer 15a made of a transparent material and a phosphor (fluorescent particle) 15b dispersed in the sealing layer 15a. Examples of the transparent material of the sealing layer 15a include glass resin, glass, resin, and the like, and glass resin is used in the present embodiment. The phosphor layer 15 is not limited to a transparent material in which a phosphor is dispersed, and may be a glass in which a light emitting center is doped, a ceramic phosphor, or the like.

The phosphor 15b is composed of at least one type of phosphor that absorbs excitation light in the blue light region from ultraviolet light and emits fluorescence having a longer wavelength than the excitation light. In the present embodiment, the solid-state light source 111a is a semiconductor laser that emits blue excitation light, and the phosphor 15b is composed of a yellow phosphor. The phosphor 15b irradiated with the blue excitation light emits yellow fluorescence. The phosphor constituting the phosphor 15b is not limited to the yellow phosphor, and may be a red phosphor or a green phosphor. Further, the phosphor 15b may be composed of a plurality of types of phosphors having different central wavelengths in the emission spectrum.

Examples of the yellow phosphor include Y ₃ Al ₅ O ₁₂ : Ce ³⁺ , (Sr, Ba) ₂ SiO ₄ : Eu ²⁺ , Cax (Si, Al) ₁₂ (O, N) ₁₆ : Eu ^{2+, and the} like. .. Examples of the red phosphor include CaAlSiN ₃ : Eu ²⁺ , (Ca, Sr) AlSiN ₃ : Eu ²⁺ , Ca ₂ Si ₅ N ₈ : Eu ²⁺ , (Ca, Sr) ₂ Si ₅ N ₈ : Eu ²⁺ , KSiF. ₆ : Mn ⁴⁺ , KTiF ₆ : Mn ^{4+ and the} like can be mentioned. Examples of the green phosphor include Lu ₃ Al ₅ O ₁₂ : Ce ³⁺ , Y ₃ (Ga, Al) ₅ O ₁₂ : Ce ³⁺ , Ca ₃ Sc ₂ Si ₃ O ₁₂ : Ce ³⁺ , CaSc ₂ O ₄ : Eu. ²⁺ , (Ba, Sr) ₂ SiO ₄ : Eu ²⁺ , Ba ₃ Si ₆ O ₁₂ N ₂ : Eu ²⁺ , (Si, Al) ₆ (O, N) ₈ : Eu ²⁺ , (Y, Lu) ₃ Al ₅ O ₁₂ : Ce ^{3+ and the} like can be mentioned.

The antireflection layer 16 has a function of improving the incident efficiency of the excitation light on the phosphor layer 15 by reducing the reflection of the excitation light incident on the phosphor layer 15. Further, the antireflection layer 16 has a function of reducing the reflection of the fluorescence emitted from the phosphor 15b on the surface of the sealing layer 15a, thereby improving the efficiency of extracting the fluorescence from the phosphor layer 15. ..

The antireflection layer 16 is formed over the entire region where the metal reflection layer 13 is formed. Further, the antireflection layer 16 is in contact with the antireflection layer 14 in a region on the substrate 11 where the phosphor layer 15 is not formed. In particular, in the present embodiment, the antireflection layer 16 is in contact with the antireflection layer 14 over the entire circumference of the region surrounding the phosphor layer 15 on the substrate 11. Therefore, not only the upper surface 15c of the phosphor layer 15 but also the side surface 15d is covered with the antireflection layer 16. The regions surrounding the phosphor layer 15 are the regions 11b outside the arc of the arc-shaped phosphor layer 15, the regions 11c inside the arc, and the regions 11d and 11e between the phosphor layer 15 and the openings 11a. And.

The antireflection layer 16 is a multilayer film in which high refractive index layers and low refractive index layers are alternately laminated in multiple layers. In the present embodiment, the antireflection layer 16 is composed of three layers, a first low refractive index layer 16a, a high refractive index layer 16b, and a second low refractive index layer 16c, in this order from the substrate 11 side. The refractive index of each layer is, for example, 1.5 for the first low refractive index layer 16a, 1.9 for the high refractive index layer 16b, and 1.5 for the second low refractive index layer 16c. The antireflection layer 16 is not limited to the one composed of three layers, and if it is a multilayer film in which high refractive index layers and low refractive index layers are alternately laminated with three or more layers, the first low refractive index layer 16 A layer other than the rate layer 16a, the high refractive index layer 16b, and the second low refractive index layer 16c may be included.

Examples of the material of the first low refractive index layer 16a and the second low refractive index layer 16c include oxides of relatively light elements such as SiO ₂ and Al ₂ O ₃ . Further, the material of the first low refractive index layer 16a and the second low refractive index layer 16c may be a nitride such as AlN, AlGaN, or AlInN. The first low refractive index layer 16a and the second low refractive index layer 16c may be formed of the same material or may be formed of different materials. Further, the first low refractive index layer 16a and the second low refractive index layer 16c may be formed of the same material as the low refractive index layer 14a of the brightening reflection layer 14, or may be formed of different materials. ..

Examples of the material of the high refractive index layer 16b include oxides of relatively heavy elements such as TiO ₂ , Nb ₂ O ₅ , Ti ₃ O ₅ , ZnO, ZrO ₂ , Ta ₂ O ₅ , and CeO ₂ . Further, the material of the high refractive index layer 16b may be a nitride such as AlON or GaN. The high refractive index layer 16b of the antireflection layer 16 may be formed of the same material as the high refractive index layer 14b of the antireflection layer 14, or may be formed of a different material.

As a preferred example, in the present embodiment, the first low refractive index layer 16a and the second low refractive index layer 16c are formed of SiO ₂ , and the high refractive index layer 16b is formed of TiO ₂ .

The first low refractive index layer 16a, the high refractive index layer 16b, and the second low refractive index layer 16c can be formed by a known method. Known methods include, for example, electron beam deposition, resistance heating vapor deposition, reactive plasma deposition, ion-assisted deposition, sputtering, metalorganic vapor phase growth, molecular beam epitaxy, pulsed laser deposition or ions. Plating etc.

As described above, in the present embodiment, the antireflection layer 14 and the antireflection layer 16 are formed in the entire region where the metal reflection layer 13 is formed. _Therefore, corrosive gases such as _H 2 S (hydrogen sulfide) or SO ₂ (sulfur dioxide) is less likely to reach the metal reflective layer 13. In particular, in the present embodiment, since the antireflection layer 16 is formed in the region where the phosphor layer 15 is not formed, the antireflection layer 16 is formed not only on the upper surface 15c but also on the side surface 15d of the phosphor layer 15. Covered by. Therefore, it is difficult for the corrosive gas to reach the metal reflective layer 13. As a result, migration is unlikely to occur in the metal reflective layer 13, and it is unlikely that the upper surface of the metal reflective layer 13 is roughened by the migration and the reflection efficiency of the metal reflective layer 13 is lowered. As a result, the wavelength conversion member 10 has improved passivation as compared with the conventional case.

Moreover, in the present embodiment, the antireflection layer 14 and the antireflection layer 16 are in contact with each other in the region on the substrate 11 where the phosphor layer 15 is not formed. Therefore, it is more difficult for the corrosive gas to reach the metal reflective layer 13. Further, in the present embodiment, the antireflection layer 14 and the antireflection layer 16 are in contact with each other over the entire circumference of the region surrounding the phosphor layer 15 on the substrate 11. Therefore, the corrosive gas is less likely to penetrate into the metal reflective layer 13. Therefore, it is particularly unlikely that the upper surface of the metal reflective layer 13 is roughened by migration and the reflection efficiency of the metal reflective layer 13 is lowered.

In addition, when the metal reflective layer 13 is made of silver, migration due to corrosive gas is more likely to occur in the metal reflective layer 13. However, in the present embodiment, since the wavelength conversion member 10 has the above configuration, migration due to corrosive gas is unlikely to occur even though the metal reflective layer 13 is made of silver.

Further, in the present embodiment, the sealing layer 15a of the phosphor layer 15 contains glass and resin. Therefore, it is possible to directly form the antireflection layer 16 on the upper surface 15c of the phosphor layer 15. Therefore, in the wavelength conversion member 10, both the improvement of the light extraction efficiency from the phosphor layer 15 and the prevention of migration in the metal reflecting layer 13 are achieved.

(projector)
Next, as the projector according to the first embodiment, the projector provided with the wavelength conversion member 10 according to the first embodiment will be described.

FIG. 3 is a configuration diagram showing a projector according to the first embodiment. As shown in FIG. 3, the projector 100 includes a light emitting device 110, an optical unit 120, and a control unit 130.

The light emitting device 110 is a device that operates as a light source of the projector 100. The light emitting device 110 includes a wavelength conversion member 10, an irradiation unit 111, a dichroic mirror 112, a first reflection mirror 113, a second reflection mirror 114, and a third reflection mirror 115.

The wavelength conversion member 10 is attached to the motor 116 and rotated. The motor 116 is driven based on a drive control signal from the control unit 130.

The irradiation unit 111 irradiates the wavelength conversion member 10 with excitation light for exciting the phosphor 15b from the phosphor layer 15 side. More specifically, the irradiation unit 111 includes a plurality of solid-state light sources 111a, a collimating lens 111b that collimates the excitation light emitted from the solid-state light source 111a, and a heat sink 111c.

The solid-state light source 111a is, for example, a semiconductor laser or a light emitting diode, and is driven by a driving current to emit excitation light of a predetermined color (wavelength). In the present embodiment, as the solid-state light source 111a, a semiconductor laser that emits blue light having a wavelength of 360 nm or more and 480 nm or less is used. The light emission control of the solid-state light source 111a is performed by the control unit 130. Although a plurality of solid-state light sources 111a are provided, one may be used.

The dichroic mirror 112 has a property of transmitting blue light (blue excitation light) emitted from the irradiation unit 111 and reflecting light having a wavelength longer than that of the blue light. That is, the dichroic mirror 112 reflects yellow light (yellow fluorescence) from the wavelength conversion member 10.

The optical unit 120 includes a condenser lens 121, a rod integrator 122, a lens group 123, a projection lens 124, and a display element 125.

The condensing lens 121 condenses the light from the light emitting device 110 on the incident end surface of the rod integrator 122.

The rod integrator 122 receives the light collected by the condensing lens 121 at the incident end face and emits the light with a uniform brightness distribution. The rod integrator 122 is, for example, a quadrangular prism, and the light incident on the rod integrator 122 is emitted with a uniform brightness distribution by repeating total internal reflection in the medium.

The lens group 123 causes the light emitted from the rod integrator 122 to enter the display element 125. The lens group 123 is a lens unit composed of a plurality of lenses, and includes, for example, a condenser lens and a relay lens.

The projection lens 124 is a lens that projects the light output from the display element 125 to the outside of the projector 100. The projection lens 124 is a projection lens group (projection unit) composed of one or a plurality of lenses, and is composed of, for example, a biconvex lens, an aperture, and a plano-concave lens.

The display element 125 controls the light emitted from the lens group 123 and outputs it as an image. Specifically, the display element 125 is a DMD (digital mirror device) used as a video element.

The control unit 130 controls the light emitting device 110 (irradiation unit 111 and the motor 116) and the display element 125. Specifically, the control unit 130 is realized by a microcomputer, a processor, a dedicated circuit, or the like.

In the projector 100 as described above, the blue light emitted from the irradiation unit 111 passes through the dichroic mirror 112 and is incident on the wavelength conversion member 10. At this time, in the wavelength conversion member 10, a part of the blue light passes through the substrate 11 through the opening 11a, and the other part of the blue light is converted into yellow light by the phosphor layer 15. At this time, the wavelength conversion member 10 is rotated by the motor 116.

The yellow light emitted from the phosphor layer 15 is reflected by the dichroic mirror 112 and guided to the optical unit 120. On the other hand, the blue light that has passed through the substrate 11 through the opening 11a is sequentially reflected by the first reflection mirror 113, the second reflection mirror 114, and the third reflection mirror 115. Then, the blue light reflected by the third reflection mirror 115 passes through the dichroic mirror 112 and is guided to the optical unit 120. That is, white light, which is a mixture of blue light and yellow light, is incident on the optical unit 120.

The white light incident on the optical unit 120 enters the display element 125 through the condensing lens 121, the rod integrator 122, and the lens group 123. Then, it is formed into an image (video light) based on the video signal from the control unit 130, and is output from the display element 125. The image output from the display element 125 is projected from the projection lens 124 onto an object such as a screen.

As described above, the present disclosure can be realized as a projector 100 provided with a wavelength conversion member 10. That is, by using the wavelength conversion member 10, the projector 100 with improved light extraction efficiency and durability can be realized.

The projector 100 according to the present embodiment is an example, and the wavelength conversion member according to the present disclosure exemplified for the wavelength conversion member 10 can be used for a projector using various existing optical systems.

[Embodiment 2]
(Wavelength conversion member)
FIG. 4 is a perspective view showing a wavelength conversion member according to the second embodiment. The wavelength conversion member 20 according to the second embodiment shown in FIG. 4 is a wavelength conversion member for a lighting device, and includes a rectangular phosphor layer 25 on one main surface side of a rectangular plate-shaped substrate 21.

Since the sectional view taken along line 2-2 in FIG. 4 is the same as the sectional view taken along line 2-2 in FIG. 1, the sectional view taken along line 2-2 in FIG. 4 will be described with reference to FIG.

As shown in FIG. 2, the wavelength conversion member 20 includes a substrate 21, an adhesive layer 22, a metal reflective layer 23, a reflective layer 24, a phosphor layer 25, and an antireflection layer 26. The components 21 to 26 constituting the wavelength conversion member 20 are substantially the same as the components 11 to 16 having the same name constituting the wavelength conversion member 10 according to the first embodiment, except for matters relating to the shape. Therefore, the description of each component 21 to 26 will be omitted.

The high-refractive index layer 24 is composed of a low refractive index layer 24a and a high refractive index layer 24b. The components 24a and 24b constituting the reflective layer 24 are substantially the same as the components 14a and 14b having the same name constituting the reflective layer 14 according to the first embodiment, except for matters relating to the shape. Therefore, the description of each component 24a and 24b will be omitted.

The phosphor layer 25 is composed of a sealing layer 25a and a phosphor 25b. The components 25a and 25b constituting the phosphor layer 25 are substantially the same as the components 15a and 15b having the same name constituting the phosphor layer 15 according to the first embodiment, except for matters relating to the shape. Therefore, the description of each component 25a and 25b will be omitted.

The antireflection layer 26 is composed of a first low refractive index layer 26a, a high refractive index layer 26b, and a second low refractive index layer 26c. The components 26a to 26c constituting the antireflection layer 26 are substantially the same as the components 16a to 16c having the same name constituting the antireflection layer 16 according to the first embodiment, except for matters relating to the shape. Therefore, the description of each component 26a to 26c will be simplified.

The antireflection layer 26 is formed over the entire region where the metal reflection layer 23 is formed. Further, the antireflection layer 26 is in contact with the antireflection layer 24 in a region on the substrate 21 where the phosphor layer 25 is not formed. In particular, in the present embodiment, the antireflection layer 26 is in contact with the antireflection layer 24 over the entire circumference of the region surrounding the phosphor layer 25 on the substrate 21. Therefore, not only the upper surface 25c of the phosphor layer 25 but also the side surface 25d is covered with the antireflection layer 26. The region surrounding the phosphor layer 25 is specifically, regions 21b to 21e on all sides of the phosphor layer 25.

As described above, the wavelength conversion member 20 has substantially the same configuration as the wavelength conversion member 10 according to the first embodiment. Therefore, the wavelength conversion member 20 exerts all the same effects as those of the wavelength conversion member 10 described above.

(Lighting device)
FIG. 5 is a configuration diagram showing a lighting device according to the second embodiment. As shown in FIG. 5, the lighting device 200 includes a wavelength conversion member 20 according to the second embodiment, a solid-state light source 210, and an optical system 220.

Examples of the solid-state light source 210 include a semiconductor laser and a light emitting diode that emit excitation light in the blue light region from ultraviolet light. In the present embodiment, the solid-state light source 210 is a semiconductor laser that emits blue light of about 460 nm using a GaN-based material.

A part of the blue light (blue excitation light) emitted from the solid-state light source 210 toward the wavelength conversion member 20 is converted into yellow light (yellow fluorescence) by the phosphor layer 25. The metal reflective film 23 reflects the yellow light emitted from the phosphor layer 25 and the blue light not converted by the phosphor layer 25 toward the optical system 220. As a result, the reflected blue light and yellow light are mixed, white light is output from the wavelength conversion member 10, and this white light is diverged by the optical system 220 to become illumination light.

As described above, the present disclosure can be realized as a lighting device 200 including a wavelength conversion member 20. That is, by using the wavelength conversion member 20, it is possible to realize the lighting device 200 having improved light extraction efficiency and durability.

[Modification example]
Although the wavelength conversion members 10, 20, the projector 100 and the lighting device 200 according to the first and second embodiments have been described above, the present disclosure is not limited to the above-described embodiment. As long as it does not deviate from the gist of the present disclosure, various modifications that can be conceived by those skilled in the art are also included in the scope of the present disclosure.

For example, in the above-described embodiment, the wavelength conversion members for projectors and lighting devices have been described, but the applications of the wavelength conversion members are not limited thereto. For example, the wavelength conversion member according to the present disclosure may be used for other purposes such as a display.

Further, in the above embodiment, the laminated structure of the wavelength conversion member is illustrated with reference to FIG. 2, but the laminated structure of the present disclosure is not limited to the laminated structure shown in FIG. For example, another layer may be provided between the layers of the laminated structure shown in FIG. 2 as long as the same function as that of the laminated structure shown in FIG. 2 can be realized.

In the above embodiment, the main materials constituting each layer of the laminated structure are illustrated, but other materials may be contained in each layer as long as the same functions as those of the laminated structure can be realized.

The wavelength conversion member according to the present disclosure can be widely used in devices that utilize wavelength-converted light, such as projectors and lighting devices.

10,20 Wavelength conversion member 11,21 Substrate 11a Aperture 11b Area outside the arc 11c Area inside the arc 11d, 11e Area between the opening 12,22 Adhesive layer 13,23 Metal reflection layer 14,24 Reflective layer 14a, 24a Low refractive index layer 14b, 24b High refractive index layer 15,25 Fluorescent material layer 15a, 25a Encapsulating layer 15b, 25b Fluorescent material 15c, 25c Top surface 15d, 25d Side surface 16,26 Antireflection layer 16a, 26a First low reflectance Rate layer 16b, 26b High refractive index layer 16c, 26c Second low refractive index layer 21b to 21e Square outer region 100 Projector 110 Light emitting device 111 Irradiating part 111a, 210 Solid light source 111b Collimating lens 111c Heat sink 112 Dycroic mirror 113 First reflection Mirror 114 2nd reflection mirror 115 3rd reflection mirror 116 Motor 120 Optical unit 121 Condensing lens 122 Rod integrator 123 Lens group 124 Projection lens 125 Display element 130 Control unit 200 Lighting device 220 Optical system

Claims (7)

A metal reflective layer, a brightening layer, a phosphor layer, and an antireflection layer are formed on the substrate in this order.
The hyperrefractive layer is formed in the entire region where the metal reflective layer is formed, and has a low refractive index layer and a high refractive index layer in order from the substrate side.
The phosphor layer is formed in a part of the region where the metal reflection layer is formed, and the phosphor layer is formed.
The antireflection layer is formed in the entire region where the metal reflection layer is formed, and has a first low refractive index layer, a high refractive index layer, and a second low refractive index layer in this order from the substrate side. Wavelength conversion member. The wavelength conversion member according to claim 1, wherein the antireflection layer is in contact with the brightening reflection layer in a region on the substrate where the phosphor layer is not formed. The wavelength conversion member according to claim 1 or 2, wherein the antireflection layer is in contact with the antireflection layer over the entire circumference of a region surrounding the phosphor layer on the substrate. The wavelength conversion member according to any one of claims 1 to 3, wherein the metal reflective layer is made of silver. The wavelength conversion according to any one of claims 1 to 4, wherein the phosphor layer has a sealing layer containing glass and a resin, and a phosphor dispersed in the sealing layer. Element. A projector comprising the wavelength conversion member according to any one of claims 1 to 5. A lighting device comprising the wavelength conversion member according to any one of claims 1 to 5.

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