JP6752914B2 - Membrane structure manufacturing method and membrane structure - Google Patents

Description

The present invention relates to a film structure having a three-dimensional shape configured by a vapor deposition type film formation technique.

Due to its excellent environmental resistance and high chemical stability, especially in the field of semiconductor device manufacturing, SiC is used as a jig or product used under ultra-high temperatures such as wafer boats, tubes, and dummy wafers during semiconductor manufacturing. The demand for a structure composed of a single film is increasing.

A structure composed of such a SiC film (hereinafter, referred to as a SiC film structure) is configured as disclosed in, for example, Patent Document 1. That is, it is a method of forming a SiC film on the outer surface of a base material made of graphite or the like by using a vapor phase growth method such as a CVD (Chemical Vapor Deposition) method, and then removing the base material.

Japanese Unexamined Patent Publication No. 2001-158666

Certainly, according to the method disclosed in Patent Document 1, a SiC film structure having a three-dimensional shape can be obtained. However, the structure manufactured by the method disclosed in Patent Document 1 is limited to the structure having only the outer shell structure. For this reason, there is a problem that the size and use are limited due to strength and morphological reasons.

Therefore, an object of the present invention is to provide a film structure manufacturing method and a film structure capable of having an internal structure even if the film structure is manufactured by using a vapor-phase growth type film forming method. To do.

In the method for producing a film structure according to the present invention for achieving the above object, a film is formed on the outer periphery of a base material by a vapor-phase growth type film forming method, and the film is removed after the film formation. It is a method of forming a structure, in which a step of forming a film forming a film forming the nth film structure on the outer periphery of the nth base material and at least a part of the film forming the nth film structure are included. The step of forming the n + 1 base material is repeated m times (n is a positive number sequentially carried up from 1 to m) to form the m + 1 base material, and then the m + 1 film structure is formed on the outer periphery thereof. form a deposition film, in the step of obtaining a membrane structure by removing up to the (m + 1) -th substrate from the first substrate, was perforated to form the first n + 1 substrate, the n-th layer It is characterized in that at least a part of the structure is exposed on the outer surface of the n + 1 base material .

Further, in the method for producing a film structure according to the present invention for achieving the above object, a film is formed on the outer periphery of the base material by a vapor phase growth type film forming method, and the base material is removed after the film formation. A method of forming a film structure in the above method, wherein a film forming the nth film structure is formed on the outer periphery of the nth base material, and at least a part of the film forming the nth film structure. The step of forming the n + 1 base material containing the above is repeated m times (n is a positive number sequentially carried up from 1 to m) to form the m + 1 base material, and then the m + 1 film structure is formed on the outer periphery thereof. It comprises a step of forming a film of a constituent film and removing from the first base material to the m + 1 base material through an opening formed in each film structure to obtain a film structure. It is characterized in that the projected area of the n-th film structure is made larger than the opening area of the opening formed in the n + 1 film structure.

Further, the membrane structure according to the present invention for achieving the above object is an inner membrane structure having a surface intersecting a constituent surface of the outer membrane structure inside the outer membrane structure forming the outer shell. The intima structure is partially exposed inside the outer membrane structure and is exposed to the outside of the outer membrane structure through an opening provided in the constituent surface. The portion having a portion and arranged inside is covered with the outer membrane structure and is not exposed to the outside, and the outer membrane structure and the inner membrane structure are made of SiC. It may be characterized in that.

Further, the membrane structure according to the present invention for achieving the above object includes an inner membrane structure that is encapsulated in an outer membrane structure forming an outer shell and is configured as a separate body from the outer membrane structure. The outer membrane structure covers the inner membrane structure in a non-bonded state, and the inner membrane structure has a projection surface having an area larger than the area of the opening communicating with the internal space of the outer membrane structure. The outer film structure and the inner film structure may be characterized in that they are made of SiC.

According to the method for producing a film structure having the above-mentioned characteristics, a film structure capable of having an internal structure can be produced even if the film structure is produced by using a vapor-phase growth type film forming method. can do.

It is a figure which shows an example of the membrane structure which has the internal structure which concerns on embodiment. It is a figure for demonstrating the manufacturing method of the membrane structure provided with the internal structure which concerns on embodiment. It is a figure which shows the structural example when the internal structure is a solid member. It is a figure which shows the example of the case where the outer membrane structure and the inner membrane structure are configured as separate bodies.

Hereinafter, a method for producing the membrane structure of the present invention and an embodiment relating to the membrane structure will be described in detail with reference to the drawings. It should be noted that the embodiments shown below are a part of a suitable embodiment for carrying out the present invention, and even if a part of the configuration is changed within the scope of the invention-specific matters, a part of the present invention is provided. Can be regarded as.

[Constitution]
First, the membrane structure 10 according to the present embodiment will be described with reference to FIG. The membrane structure 10 according to the present embodiment has an outer membrane structure 12 and an inner membrane structure 14. The outer film structure 12 is a structure forming the outer shell of the film structure 10, and is composed of a film formed by a vapor deposition type film formation method. The film is a film formed by techniques such as the CVD method, PVD (Physical Vapor Deposition) method, and MBE (Molecular Beam Epitaxy) method, and has at least self-sustaining strength. It is preferable to have.

The constituent material of the film may be any material that can be formed by a vapor phase growth type film forming method such as SiC (Silicon Carbide). The specific form of the outer membrane structure 12 does not matter, and any form may be used as long as it covers at least a part of the inner membrane structure 14. As an example, the one shown in FIG. 1 has end plates 12a and 12b at both ends of the tubular body, and one end plate 12b has an opening.

The intima structure 14 is a structure that forms a three-dimensional shape inside the outer membrane structure 12. Similar to the outer film structure 12, the structure may be a film formed by a vapor deposition type film forming method. Further, the constituent material of the film is preferably the same material as that of the outer membrane structure 12, but may be composed of different materials. In the case of a contact structure having a surface where the outer membrane structure 12 and the inner membrane structure 14 intersect, when the outer membrane structure 12 and the inner membrane structure 14 are made of different materials, heat is applied. It is advisable to select a material with an approximate expansion coefficient (linear expansion coefficient). This is to prevent the occurrence of strain during heating or cooling.

As with the outer membrane structure 12, the specific form of the inner membrane structure 14 is not a question. As an example, the one shown in FIG. 1 is a tubular body, and a part thereof is arranged in the internal space of the outer membrane structure 12. The exposed portion of the inner membrane structure 14 has a structure that is exposed to the outside of the outer membrane structure 12 through an opening provided in one end plate 12b of the outer membrane structure 12. Therefore, the intima structure 14 has a surface inside the outer membrane structure 12 that intersects with the constituent surface of the outer membrane structure 12.

[Production method]
Next, a method for producing the film structure 10 having the above-mentioned characteristics will be described with reference to FIG. First, the first base material 20 which is the base material of the intima structure 14 is formed. In the case of the example shown in FIG. 1, the first base material 20 has a columnar shape, and masking 22 is applied to the end portion where the film is not formed. It is desirable that the constituent material of the first base material 20 is one that can be easily removed by heating, a chemical solution, or the like. As an example, graphite can be mentioned, but it may be composed of tungsten, molybdenum, silicon or the like.

Next, a film constituting the inner film structure 14 is formed on the surface of the first base material 20 by a vapor deposition type film formation method such as a CVD method (see FIG. 2B). The constituent material of the film can be selected depending on the raw material, and the film can be formed of, for example, SiC or the like.

After the film formation is completed, as shown in FIG. 2C, the second base material 24 to be the base material of the outer film structure 12 is formed so as to cover the inclusion range of the inner film structure 14. Regarding the formation of the second base material 24, as long as it can cover the inclusion range in the intima structure 14, the specific method is not questioned. For example, a method may be used in which paste-like carbon is attached to the outer periphery of the inner film structure 14, cured, and then molded. In addition, a method may be used in which the second base material 24 formed in a shape capable of including the intima structure 14 is divided into half and sandwiched by the second base material 24. After forming the second base material 24, masking 26 is applied to a range where film formation is not desired, as in the case of the first base material 20. In the case of the example shown in FIG. 2C, masking 26 is applied to the end portion of the intima structure 14 exposed to the outside of the second base material 24.

After forming the second base material 24 and applying masking 26 as necessary, as shown in FIG. 2 (D), the surface of the second base material 24 and one of the exposed intimal structure 14 A film is formed on the part. The film to be molded may be made of the same raw material as the intima structure 14, but may also be made of a different raw material.

After the outer film structure 12 is formed by film formation, as shown in FIG. 2 (E), the inner film structure 14 and the base materials (first base material 20 and the first base material 20) located inside the outer film structure 12 are formed. 2 The base material 24) is removed. The removal of the first base material 20 and the second base material 24 may be performed by a method suitable for the constituent material of the base material used and the constituent material of the film. For example, when graphite is used as a constituent material of the first base material 20 and the second base material 24 and the inner film structure 14 and the outer film structure 12 are made of SiC, a method of heating in an oxidizing atmosphere is performed. Just take it.

[effect]
The film structure 10 having the above-mentioned characteristics has an internal structure composed of the intima structure 14 even if the film structure is manufactured by using the vapor deposition type film forming method. .. In the form shown in FIG. 1, since the hollow portion of the inner membrane structure 14 and the hollow portion of the outer membrane structure 12 communicate with each other, one opening connected to the hollow portion (inner membrane structure). (Through hole composed of 14). However, when the hollow portion of the inner membrane structure 14 and the hollow portion of the outer membrane structure 12 are separated, it is necessary to provide an opening connected to each hollow portion in order to remove the base material. is there.

[Modification example]
Further, in the above embodiment, both the outer membrane structure 12 and the inner membrane structure 14 are described as having a hollow structure. However, the intima structure 14 does not necessarily have to have a hollow structure. For example, as shown in FIG. 3A, the columnar member may be the intima structure 14. That is, the inner film structure 14 may have a solid structure as long as it is a member configured by a vapor deposition type film formation method.

When such a member is used as the intima structure 14, as shown in FIG. 3A, a plurality of intima structures are fitted into through holes 28a of the base material 28 configured as a perforated block, and then the figure is shown. As shown in 3 (B), a film constituting the outer film structure 12 is formed on the outer periphery of the base material 28. Then, the base material 28 may be removed as shown in FIG. 3C. The film structure 10 thus formed can be provided with columns inside, and overload resistance can be improved.

Further, in the above embodiment, it is described that the intima structure 14 has a surface inside the outer membrane structure 12 that intersects with the constituent surface of the outer membrane structure 12. However, while the inner membrane structure 14 is included in the outer membrane structure 12, both may be configured as completely separate bodies as shown in FIG. In this case, the inner film structure 14 may have a structure having a projection surface larger than the opening area of the opening 12c formed in the outer film structure 12 in order to remove the second base material 24. This is to prevent the inner membrane structure 14 from being discharged from the opening 12c formed in the outer membrane structure 12. In FIG. 4, FIG. 4A is a diagram showing a cross-sectional structure of the membrane structure 10, and FIG. 4B is a diagram showing a bottom surface configuration.

Further, in the above embodiment, the base materials are the first base material 20 and the second base material 24, and a film is formed on the outer periphery of each base material to remove the first base material 20 and the second base material 24. It was described that the membrane structure 10 was obtained. However, the film structure 10 according to the present invention can be manufactured by repeating the same steps a plurality of times to produce a film structure having a multi-layer structure.

That is, when n is a positive number from 1 to m, a film forming the nth film structure is formed on the outer periphery of the nth base material, and the film forming the nth film structure is formed on the outer periphery of the film forming the nth structure. The n + 1th substrate is formed. Then, a film forming the n + 1 film structure is formed on the outer periphery of the n + 1 substrate. After repeating such a step to form a film constituting the m + 1 structure, the first to m + 1 base materials are removed. By repeating the formation and film formation of the base material in this way, it is possible to form a film structure having a complicated internal structure.

10 ……… Membrane structure, 12 ……… Outer membrane structure, 12a, 12b ……… End plate, 12c ……… Opening, 14 ……… Inner membrane structure, 20 ……… First base material , 22 ……… Masking, 24 ……… Second base material, 26 ……… Masking, 28 ……… Base material, 28a ……… Through hole.

Claims (4)

A method of forming a film structure on the outer periphery of a base material by a vapor phase growth type film forming method and removing the base material after the film formation to form a film structure.
The process of forming a film forming the nth film structure on the outer periphery of the nth base material, and
The step of forming the n + 1 base material containing at least a part of the film constituting the nth film structure was repeated m times (n is a positive number sequentially carried up from 1 to m).
After forming the m + 1 base material, a film forming the m + 1 film structure is formed on the outer periphery thereof, and the first base material is removed from the m + 1 base material to obtain a film structure. Have,
A method for producing a film structure, which comprises exposing at least a part of the nth film structure to the outer surface of the n + 1 base material in the step of forming the n + 1 base material. A method of forming a film structure on the outer periphery of a base material by a vapor phase growth type film forming method and removing the base material after the film formation to form a film structure.
The process of forming a film forming the nth film structure on the outer periphery of the nth base material, and
The step of forming the n + 1 base material containing at least a part of the film constituting the nth film structure was repeated m times (n is a positive number sequentially carried up from 1 to m).
After forming the first m + 1 base material, a film forming the m + 1 film structure is formed on the outer periphery thereof, and the first m + 1 base material is formed from the first base material through the openings formed in each film structure. It has a process of removing up to the material to obtain a film structure.
A method for producing a film structure, wherein the projected area of the n-th film structure is made larger than the opening area of the opening formed in the n + 1 film structure. Inside the outer membrane structure forming the outer shell, there is an inner membrane structure having a surface that intersects with the constituent surface of the outer membrane structure.
The inner membrane structure has a part thereof arranged inside the outer membrane structure and an exposed portion protruding to the outside of the outer membrane structure through an opening provided in the constituent surface. And
The portion arranged inside is covered with the outer membrane structure and is not exposed to the outside.
A membrane structure characterized in that the outer membrane structure and the inner membrane structure are made of SiC. It is contained in an outer membrane structure forming an outer shell, and has an inner membrane structure configured as a separate body from the outer membrane structure.
The outer membrane structure covers the inner membrane structure in a non-bonded state.
The intima structure has a projection surface having an area larger than the area of the opening communicating with the internal space of the outer membrane structure.
A membrane structure characterized in that the outer membrane structure and the inner membrane structure are made of SiC.

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