JP6701628B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor device and its manufacturing method.

Conventionally, when mounting an LED on a substrate such as a ceramic, flip-chip mounting has been adopted in which the electrodes of the LED chip are mounted toward the ceramic substrate side.
Generally, in an LED chip, an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are stacked, a part of these semiconductor layers is removed in the thickness direction, and a negative electrode connected to the n-type semiconductor layer on the same surface side. And a positive electrode connected to the p-type semiconductor layer. Therefore, there is a difference in height between the upper surface of the negative electrode and the upper surface of the positive electrode. This height difference causes tilting of the LED with respect to the substrate in flip-chip mounting.
Therefore, in order to prevent the inclination of the LED, when the LED is flip-mounted, a method of forming bumps of different heights on the n-electrode and the p-electrode (for example, Patent Document 1), n is formed on the substrate itself. A method of providing a step corresponding to the electrode and the p electrode (for example, Patent Document 2) has been proposed.

JP, 2012-49296, A JP, 2002-171022, A

In order to meet the widespread demand for LEDs in recent years, there is a demand for a structure and a method for realizing flip-chip mounting on the base body of LEDs with high reliability.
An object of the present disclosure is to provide a semiconductor device that can be flip-chip mounted on a base body of an LED with high reliability, and a manufacturing method thereof.

A semiconductor device according to an embodiment of the present invention includes a semiconductor stack in which a second semiconductor layer is stacked on a first semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second semiconductor layer. A semiconductor element that is electrically connected and covers a side surface of the second electrode and the second semiconductor layer that are arranged on the same surface side as the first electrode and includes a protective film that exposes at least a part of the side surface of the first semiconductor layer. And a base body having a first wiring pattern and a second wiring pattern, a first joining member and a second joining member, and the first wiring pattern is a first connection that extends in a convex shape toward the second wiring pattern side. And a second wiring pattern, which has a second connection portion that has a larger area than the first connection portion, extends in a convex shape toward the first connection portion, and the first electrode is connected to the first connection portion. The second electrode faces the first connecting member and is connected to the first connecting portion by the first connecting member, and the second electrode faces the second connecting portion and is connected to the second connecting member having a maximum thickness larger than that of the first connecting member. It is connected to the connection part.
A semiconductor device according to another embodiment of the present invention is a semiconductor stack in which a second semiconductor layer is stacked on a first semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second semiconductor layer. A semiconductor that is electrically connected to the first electrode and covers the side surface of the second electrode and the second semiconductor layer that are arranged on the same side as the first electrode and that exposes at least a part of the side surface of the first semiconductor layer. An element, a base body having a first wiring pattern and a second wiring pattern, a first bonding member and a second bonding member, and the first wiring pattern is a first wiring pattern that extends in a convex shape toward the second wiring pattern side. The second wiring pattern has a connecting portion, the second wiring pattern extends in a convex shape toward the first connecting portion side, and has a second connecting portion having a larger area than the first connecting portion, and the first electrode is the first connecting portion. And a second electrode facing the second connecting portion and having a maximum thickness greater than that of the first joining member. The shortest distance between the side surface of the first semiconductor layer exposed from the protective film and the second bonding member is the shortest distance between the side surface of the first semiconductor layer exposed from the protective film and the first bonding member. Longer than distance.
A method for manufacturing a semiconductor device according to an embodiment of the present invention includes (a) a first wiring pattern and a second wiring pattern, and the first wiring pattern extends in a convex shape toward the second wiring pattern side. A substrate having a connecting portion and a second wiring pattern, which extends toward the first connecting portion side and has a convex second connecting portion having an edge longer than the edge of the first connecting portion, is prepared. b) preparing a semiconductor element having a first electrode and a second electrode on the same surface side, and (c) the semiconductor element having the first electrode facing the first wiring pattern via the first bonding member, and the second element The electrode is arranged on the base so that the electrode faces the second wiring pattern via the second joining member, and (d) the first joining member and the second joining member are melted to form the first connecting portion and the second connecting portion. The connection includes connecting the first bonding member and the first wiring pattern so that the bonding area between the first bonding member and the first wiring pattern is larger than the bonding area between the second bonding member and the second wiring pattern by the surface tension of the edge.

  According to the semiconductor device and the method of manufacturing the same of the present disclosure, flip-chip mounting on the base body of the LED can be realized with high reliability.

It is a top view which shows one Embodiment of the semiconductor device of this invention. It is an enlarged view in the dotted-line frame C of FIG. 1A. FIG. 2 is a cross-sectional view showing an embodiment of a semiconductor device corresponding to a cross section taken along line B-B′ of FIG. 1B. FIG. 2B is a sectional view taken along line B-B′ of FIG. 1B. It is an enlarged view in the dotted-line frame E of FIG. 1D. It is an enlarged view in the dotted-line frame F of FIG. 1D. It is a schematic plan view for explaining the shape of still another wiring pattern in the semiconductor device of the present invention.

  Hereinafter, a semiconductor device and a method of manufacturing the same according to embodiments of the present invention will be described with reference to the drawings. The sizes and positional relationships of members shown in each drawing may be exaggerated for clarity of explanation. Further, in the following description, the same name and reference numeral basically indicate members of the same, same quality or same function, and detailed description thereof will be appropriately omitted. Further, each element constituting the present disclosure may be configured such that a plurality of elements are configured by the same member and one member also serves as a plurality of elements, or conversely, the function of one member is performed by a plurality of members. It can be shared and realized. The contents described in some of the examples and embodiments may be applicable to other examples and embodiments.

[First Embodiment]
As shown in FIGS. 1A to 1D, the semiconductor device 10 of the first embodiment is a semiconductor in which a p-type semiconductor layer 5 which is a second semiconductor layer is stacked on an n-type semiconductor layer 3 which is a first semiconductor layer. Of the laminated body 6, the first electrode electrically connected to the first semiconductor layer, the second electrode electrically connected to the second semiconductor layer and disposed on the same surface side as the first electrode, and the second semiconductor layer. The light emitting element 1 that is a semiconductor element that covers the side surface and has a protective film (for example, 8 and 12 in FIG. 1C) that exposes at least a part of the side surface of the first semiconductor layer, the first wiring pattern 15, and the first wiring pattern 15. It is configured to have a base 13 having two wiring patterns 16, a first joining member 17 and a second joining member 18.
In addition, the first wiring pattern 15 has a first connecting portion 15a that is convexly extended toward the second wiring pattern 16 side, and the second wiring pattern 16 is convexly extended toward the first connecting portion 15a side. The second connecting portion 16a has an area larger than that of the first connecting portion 15a. The first electrode faces the first connecting portion 15a and is connected to the first connecting portion 15a by the first joining member 17. The second electrode faces the second connecting portion 16a and is connected to the second connecting portion 16a by a second joining member 18 having a maximum thickness larger than that of the first joining member 17.

(Base)
As described above, the base body includes at least the first wiring pattern and the second wiring pattern. It is preferable that the first wiring pattern and the second wiring pattern are arranged so as to be separated from each other and face each other. It is preferable that the first wiring pattern and the second wiring pattern are arranged on the front surface of the base material made of glass, resin, ceramics or the like, optionally inside and/or on the back surface. Further, a flexible member (for example, a member having a film or sheet shape) may be used as the base material 14. It is preferable to use a flexible member because the substrate can be wound up during manufacturing and shipping, cut into a desired size and used. As the flexible member, it is preferable to use materials such as PET (polyethylene terephthalate), polyimide and glass epoxy. The first wiring pattern and the second wiring pattern may be any as long as they can supply a current to the semiconductor element, and are preferably formed of a material, a thickness and the like which are usually used in the relevant field.

  The first wiring pattern has a first connecting portion that is a portion that extends in a convex shape toward the second wiring pattern side. The second wiring pattern has a second connecting portion that is a portion that extends in a convex shape toward the first connecting portion. By making these connecting portions extend in a convex shape, most of the outer circumference of the connecting portion can be located at the edge of the wiring pattern. This makes it possible to effectively utilize the surface tension of the joining member, which will be described later. As a result, the joining member can be arranged in a proper place and in an appropriate form, and the intended joining form can be secured.

  The second connecting portion preferably has a larger area than the first connecting portion. In this way, by increasing the area of the second connecting portion, the length of the edge of the second connecting portion can be maintained longer, so that the surface tension of the second joining member can be utilized more. Becomes Thereby, the joining member can be further stopped in the second connection portion, the thickness thereof can be increased, and the semiconductor element can be easily inclined so that the first connection portion side becomes lower. The area of the second connecting portion is not particularly limited, but in order to incline, it is preferably about 105 to 150% of the area of the first connecting portion, and more preferably about 105 to 130%. ..

  The convexly extending length of the second connecting portion (the length in the arrow L direction in FIG. 1B) is greater than the convexly extending length of the first connecting portion (the length in the arrow L direction in FIG. 1B). It is preferably long. By doing so, the second joining member can be further stopped in the second connecting portion. This is because the second connecting portion extends in a convex shape toward the first connecting portion. That is, in the direction in which the second connecting portion extends, a part of the second wiring pattern having a width larger than the width of the second connecting portion is formed on the side opposite to the first connecting portion side. Therefore, in order to further stop the second joining member in the second connecting portion, it is preferable that the convex length of the second connecting portion be long.

  The width of the second connecting portion (the length in the direction of the arrow W in FIG. 1B) is preferably equal to or narrower than the width of the first connecting portion. This is because the second connecting portion extends to the first connecting portion side in a convex shape, and thus the edges of the second connecting portion on both sides in the width direction of the second connecting portion (length in the direction of arrow W in FIG. 1B). Is formed. Therefore, the narrower the width of the second connecting portion, the more easily the surface tension can be used.

  The shapes of the first connecting portion and the second connecting portion that extend in a convex shape include, for example, a polygon such as a triangle or a quadrangle, an irregular shape such as T and L, or a curve such as a semicircle and a semi-ellipse. Shape etc. are mentioned. In particular, since the semiconductor element is usually quadrangular, it is preferable that the shapes of the first connecting portion and the second connecting portion are also quadrangular. In particular, the second connecting portion is the tip portion, that is, the first connecting portion. It is more preferable that the width is wide on the side. In other words, it is more preferable that the second connecting portion extends in a T or L shape. By doing so, the second joining member can be further stopped in the second connecting portion.

  The length and width of the convexly extending portion that is the first connecting portion can be appropriately set depending on the size of the semiconductor element to be mounted, the size of the electrode of the semiconductor element, and the like. For example, the size of the electrode On the other hand, the width (direction perpendicular to W in FIG. 1B) is 0.5 to 2 times, and the length (direction W in FIG. 1B) is about 0.5 to 3 times.

The first connecting portion faces the first electrode of the semiconductor element and is connected by the first joining member. The second connecting portion faces the second electrode of the semiconductor element and is connected by the second joining member.
Here, the first joining member and the second joining member are solder such as tin-bismuth-based, tin-copper-based, tin-silver-based, gold-tin-based solder, Au and Sn, Au and Si, Au and Ge, Au. And Cu, eutectic alloys such as alloys containing Ag and Cu as main components, conductive pastes such as silver, gold, and palladium, conductive materials such as bumps, anisotropic conductive materials, and low melting point metal brazing materials. Members. Among them, solder and eutectic alloy are preferable, and solder is more preferable. The first joining member and the second joining member are preferably made of the same material, but may be made of different materials. At this time, it is preferable to select a material for the first joining member that has better wettability and spread than the second joining member. By doing so, the spread of the first bonding member on the surface of the first wiring pattern can be made larger than the spread of the second bonding member on the surface of the second wiring pattern.

  It is preferable that the second joining member has a maximum thickness larger than that of the first joining member and connects the connecting portion and the electrode of the semiconductor element. The maximum thickness difference between the first joining member and the second joining member is, for example, a range in which the upper surface of the semiconductor element has an inclination of about 10 degrees or smaller in consideration of the size and inclination of the semiconductor element. Specifically, in the case of a semiconductor element having one side of 600 μm, the thickness is about 100 μm or less, preferably about 80 μm or less, and more preferably about 60 μm or less.

In other words, as described above, in the semiconductor stacked body exposed from the protective film, the shortest distance between the exposed side surface of the first semiconductor layer and the second bonding member is the exposed side surface of the first semiconductor layer and the first bonding member. It is preferable that the maximum thickness of the second joining member is set to be thicker than that of the first joining member so that the second joining member is longer than the shortest distance.
By satisfying such a thickness relationship of the joining member and/or a distance relationship with the first semiconductor layer, it is possible to effectively prevent the first semiconductor layer exposed from the protective film from being short-circuited with the second wiring pattern. Therefore, the reliability of mounting the semiconductor element on the substrate can be ensured. Note that even if the first semiconductor layer exposed from the protective film and the first wiring pattern are in contact with each other, the polarity is the same, so that a short circuit does not occur. Since the first wiring pattern and the second wiring pattern have different polarities, a short circuit occurs.

In other words, in order to secure the thickness relationship of the above-mentioned joining member, the spread of the first joining member over the surface of the first wiring pattern should be larger than the spread of the second joining member over the surface of the second wiring pattern. Is preferred. That is, it is preferable that the joint area between the first joint member and the first wiring pattern is larger than the joint area between the second joint member and the second wiring pattern.
However, the first joining member and the second joining member that connect one semiconductor element may be arranged in the same amount, but the difference between the two may be within 50 to 200% by weight of one or the other. Above all, it is preferable that the amount of the second joining member is smaller than the amount of the first joining member. Here, the same amount means that the difference between the first joining member and the second joining member is within ±10 wt% of one or the other.

  In addition, it is preferable that the bonding area between the first bonding member and the first electrode is set to be equal to the bonding area between the second bonding member and the second electrode. This is because the thickness of the joining member changes depending on the joining area between the joining member and the electrode. However, when the bonding area between the first bonding member and the first electrode and the bonding area between the second bonding member and the second electrode are made equal to each other, the difference in thickness between the first bonding member and the second bonding member causes The bonding area between the bonding member and the electrode has almost no effect. That is, the thickness of the first joining member and the thickness of the second joining member are controlled by controlling the joining area between the first joining member and the first wiring pattern and the joining area between the second joining member and the second wiring pattern. Can be controlled. Here, “equal size” means that the difference in the joint area between the first joint member and the first electrode and the joint area between the second joint member and the second electrode is within ±20% of one or the other. To do.

  It is preferable to incline the semiconductor element so as to be closer to the first connection portion side than to the second connection portion side. From another perspective, it is preferable that the semiconductor element is arranged such that the surface opposite to the surface provided with the electrodes is inclined with respect to the surface of the base body. In other words, in the semiconductor element, the surface opposite to the surface including the first electrode is preferably closer to the surface of the base body than the surface opposite to the surface including the second electrode. In other words, the semiconductor element is connected by the first bonding member and the second bonding member such that the upper surface (opposite surface) of the semiconductor element is closer to the surface of the base body from the second wiring pattern side toward the first wiring pattern side. It is preferable. The degree of inclination is not particularly limited, but is preferably about 2 to 10° in consideration of stability of mounting. Due to such an inclination, the joining member, which is connected to the wiring pattern and to which the same electric charge as that of the wiring pattern is applied, is moved away from the semiconductor layer to which the opposite electric charge is applied, in combination with the thickness and the joining area of the joining member described above. Therefore, the short circuit can be effectively prevented.

(Semiconductor element)
The semiconductor element is preferably a light emitting element such as a laser element or a light emitting diode, but may be a transistor, an integrated circuit, a resistor, a memory or the like. Among them, the light emitting element is preferable.
The semiconductor element may have only one semiconductor element or a plurality of semiconductor elements.
The semiconductor element includes at least a semiconductor stack, a first electrode and a second electrode, and a protective film.

(Semiconductor laminate)
The semiconductor laminated body may be a laminated body of a plurality of semiconductor layers. Specifically, the first semiconductor layer (for example, an n-type semiconductor layer), the light emitting layer, and the second semiconductor layer (for example, a p-type semiconductor layer) are arranged in this order on a substrate for semiconductor growth such as a sapphire substrate. The thing laminated|stacked is mentioned. However, in the semiconductor device, the substrate for semiconductor growth may be removed.

Such semiconductor layers, such as the first semiconductor layer, the light emitting layer, and the second semiconductor layer, are not particularly limited in kind, material, etc., and include III-V group compound semiconductors, II-VI group compound semiconductors, etc. , Can be formed of various semiconductors. Specific examples thereof include nitride-based semiconductor materials such as In _X Al _Y Ga _1-XY N (0≦X, 0≦Y, X+Y≦1), and InN, AlN, GaN, InGaN, AlGaN, InGaAlN. Etc. can be used. As the film thickness and layer structure of each layer, those known in the art can be used.
The substrate may have irregularities on its surface, or may have an off angle of about 10° or less.

  The planar shape of the semiconductor laminated body is not particularly limited, and examples thereof include polygons such as quadrangle and hexagon, circles, ellipses, and shapes similar to these. Among them, the rectangular shape is preferable. The semiconductor laminated body is preferably removed in the thickness direction in a partial region. Specifically, it is preferable that the second semiconductor layer, the light emitting layer, and optionally a part of the n-type semiconductor layer are removed in a predetermined region, and the n-type semiconductor layer is exposed on the second semiconductor layer side. . Part of the region here may be one end side, the other end side, the inner side, one region, or a plurality of regions of the semiconductor stacked body. But it's okay. For example, one or a plurality of regions are preferably provided inside the semiconductor stacked body.

(First electrode and second electrode)
The first electrode is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer. These first electrode and second electrode are arranged on the upper surface side of the semiconductor stacked body (that is, on the side opposite to the semiconductor growth substrate). The first electrode and the second electrode are electrically connected not only to the ohmic layer arranged in contact with the first semiconductor layer and the second semiconductor layer, but also to the ohmic layer, such as a reflective layer and a pad layer. It includes one or more layers having other functions and is exposed on the surface of the semiconductor device. The first electrode and the second electrode may have a laminated structure of different conductive layers.

For example, the ohmic layer is preferably formed of a translucent conductive film in order to efficiently extract light from the semiconductor stacked body. Here, the light-transmitting property means a property of transmitting 50% or more, 60% or more, 70% or more, 80% or more of light emitted from the light emitting layer. For example, the ohmic layer is not particularly limited, and any electrode material capable of making ohmic contact with the semiconductor layer can be used. For example, metals such as nickel, titanium, tungsten, platinum, rhodium, palladium, vanadium, chromium, niobium, zinc, tantalum, molybdenum, hafnium, aluminum, silver and copper or alloys thereof, zinc, indium, tin, gallium and magnesium. Examples thereof include conductive oxides containing at least one element selected from the group consisting of Examples of the conductive oxide include ITO, ZnO, IZO, GZO, In ₂ O ₃ and SnO ₂ . The ohmic layer can be formed by a method known in the art. Further, the thickness of the ohmic layer is not particularly limited and can be appropriately adjusted depending on the intended characteristics and the like.

  The ohmic layer is usually the same size as or slightly smaller than the top surface of the semiconductor stack, and has the same shape or similar shape as the top surface of the semiconductor stack in order to uniformly supply current to the entire surface of the semiconductor layer. The shape is preferable.

  Examples of the reflective layer include a layer containing silver or a silver alloy. As the silver alloy, any material known in the art may be used. The thickness of the reflective layer is not particularly limited and may be a thickness that can effectively reflect the light emitted from the light emitting element, for example, about 20 nm to 1 μm. The larger the contact area of the reflective layer with the first semiconductor layer or the second semiconductor layer, the more preferable. For example, 50% or more, 60% or more, and 70% or more of the plane area of the semiconductor laminated body can be mentioned.

  When a reflective layer is used as the conductive layer, its upper surface (preferably the upper surface and the side surface) is covered with a single layer or a laminated layer containing a metal such as aluminum, copper or nickel in order to prevent migration of silver. It is preferable to form a covered electrode that The thickness of the coated electrode is, for example, about several hundred nm to several μm.

  The pad layer is made of, for example, a metal such as Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Al or Cu, or an alloy thereof, or a single layer film or a laminated film of the conductive layer exemplified as the ohmic layer. Can be formed. Specifically, these electrodes are Ti/Rh/Au, Ti/Pt/Au, W/Pt/Au, Rh/Pt/Au, Ni/Pt/Au, Al-Cu alloy/Ti/from the semiconductor layer side. It can be formed by a laminated film of Pt/Au, Al-Si-Cu alloy/Ti/Pt/Au, Ti/Rh, or the like. The film thickness may be any of film thicknesses used in the field. The size can be appropriately set depending on the characteristics required for the semiconductor element.

The shapes of the first electrode and the second electrode are not particularly limited, and are preferably quadrangular, for example, corresponding to the shape of the semiconductor stacked body.
It is preferable that the first electrode and the second electrode are respectively arranged on one end side and the other end side in the semiconductor laminated body in plan view.

(Protective film)
The semiconductor element preferably includes a protective film that covers at least a part of the side surface of the semiconductor stacked body. The protective film preferably exposes at least a part of the side surface of the semiconductor stacked body. In particular, the protective film more preferably covers the side surface of the second semiconductor layer and exposes a part of the side surface of the first semiconductor layer. The protective film may be one of the above-mentioned insulating films that extends to the side surface of the semiconductor stacked body. Thereby, the side surface of the semiconductor laminated body can be protected and the insulating property can be secured.

  The protective film can be formed in a single-layer or multi-layer structure using an oxide or a nitride containing one or more elements selected from the group consisting of Ti, Zr, Nb, Ta, and Al.

(Insulating film, etc.)
In order to realize the arrangement of the first electrode and the second electrode as described above, a desired conductivity and/or insulation property is secured at an arbitrary position such as between the ohmic layer and the pad layer or on the pad layer. Therefore, it is preferable that one or more insulating films are formed. Above all, it is more preferable that an insulating film is formed between the ohmic layer and the pad layer and on the pad layer. By arranging the insulating film in this manner, the first electrode can be routed over the second semiconductor layer through the insulating film regardless of the exposed position of the first semiconductor layer. Further, regardless of the position of the second semiconductor layer, the second electrode can be routed over the first semiconductor layer and/or the second semiconductor layer via these insulating films. As a result, it is possible to avoid a height difference on the upper surfaces of the first electrode and the second electrode due to a height difference of the semiconductor layer. In other words, the first electrode and the second electrode are the surface of the second semiconductor layer. It is possible to arrange them at the same height with respect to, and as will be described later, when the semiconductor element is flip-chip mounted on the substrate, reliable and high reliability can be secured. Here, the same height of the first electrode and the second electrode means that a height difference within about 0.5 μm is allowed.

  Like the protective film, the insulating film can be formed to have a single-layer structure or a multi-layer structure using an oxide or a nitride containing one or more elements selected from the group consisting of Ti, Zr, Nb, Ta, and Al. . The above-mentioned reflective layer may be formed in this insulating film in a shape, position, and size that ensure insulation.

The distributed Bragg reflector (hereinafter, referred to as “the distributed Bragg reflector” (hereinafter, referred to as “between the first electrode and the second electrode” and between the first semiconductor layer and the second semiconductor layer) does not hinder the electrical connection therebetween. (Also referred to as “DBR”).
The DBR is, for example, a multi-layer structure in which a plurality of sets of one set of a low-refractive index layer and a high-refractive index layer are laminated on an underlayer made of an oxide film or the like, and a predetermined wavelength light is selected. Reflected. Specifically, by alternately laminating films having different refractive indexes with a thickness of ¼ wavelength, it is possible to reflect a predetermined wavelength with high efficiency. The material can be formed by including one or more oxides or nitrides selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al. When the DBR is formed of an oxide film, the low refractive index layer may be, for example, SiO ₂ , and the high refractive index layer may be, for example, Nb ₂ O ₅ , TiO ₂ , ZrO ₂ , Ta ₂ O ₅ or the like. Specifically, (Nb ₂ O ₅ /SiO ₂ )n and n are 2 to _{5 in} order from the underlayer side. The total film thickness of DBR is preferably about 0.2 to 1 μm.

  With such a configuration, at the time of reflow of the joining member, the surface tension of the second joining member acts more than that of the first joining member due to the difference in area between the first connecting portion and the second connecting portion. Thereby, the bonding area between the second bonding member and the second wiring pattern becomes smaller than the bonding area between the first bonding member and the first wiring pattern, and the thickness of the second bonding member can be increased. Thereby, the shortest distance s between the exposed side surface of the n-type semiconductor layer 3 and the second bonding member 18 is arranged longer than the shortest distance q between the exposed side surface of the n-type semiconductor layer 3 and the first bonding member 17. be able to. As a result, a short circuit between the second wiring pattern 16 electrically connected to the p-type semiconductor layer 5 and the n-type semiconductor layer 3 can be effectively prevented, and a highly reliable semiconductor device can be obtained. it can.

[Method of manufacturing semiconductor device]
The manufacturing method of the semiconductor device of the present disclosure,
(A) A first wiring pattern and a second wiring pattern are provided, the first wiring pattern has a first connecting portion that extends in a convex shape toward the second wiring pattern side, and the second wiring pattern is the first wiring pattern. Preparing a base body having a second connecting portion extending toward the connecting portion side and having an edge longer than the edge of the first connecting portion,
(B) preparing a semiconductor element having a first electrode and a second electrode on the same surface side,
(C) The semiconductor element is mounted on the substrate such that the first electrode faces the first wiring pattern via the first bonding member and the second electrode faces the second wiring pattern via the second bonding member. Placed in
(D) The first joint member and the second joint member are melted, and the surface area of the edges of the first joint portion and the second joint portion causes surface tension of the first joint member and the first wiring pattern to be the second joint. A method of manufacturing a semiconductor device, which comprises connecting a member and a second wiring pattern so as to be larger than a bonding area.

  In the steps (a) and (b), the above-mentioned substrate and semiconductor element are prepared, respectively.

  In the step (c), the semiconductor element is arranged such that the first electrode of the semiconductor element faces the first wiring pattern via the first bonding member and the second electrode forms the second wiring pattern via the second bonding member. On the substrate so as to face the substrate.

  In the step (d), the first joining member and the second joining member are melted. As the melting method here, a method known in the art, such as a method of heating the substrate itself, a method of placing the substrate and the semiconductor element in a high temperature atmosphere, can be used. The temperature for melting can be appropriately adjusted depending on the joining member used, but for example, about 150 to 300°C is preferable, and about 220 to 260°C is more preferable. The time required for melting is not particularly limited, but in order to prevent damage/deterioration of other members due to heat, it is preferably about 10 to 90 seconds, more preferably about 20 to 60 seconds.

  After melting the bonding member, it is preferable to expose the substrate and the semiconductor element to room temperature. Thereby, for example, the second joining member can be solidified so that the maximum thickness thereof becomes thicker than that of the first joining member or the joining area with the wiring pattern becomes larger. Thereby, the shortest distance between the side surface of the first semiconductor layer exposed from the protective film and the second bonding member is made longer than the shortest distance between the side surface of the first semiconductor layer exposed from the protective film and the first bonding member. You can That is, even when the semiconductor laminated body is exposed without being covered with the protective film, the semiconductor element is electrically connected to the base without contacting the n or p type semiconductor layer in the semiconductor laminated body with the wiring pattern of the reverse conductivity type. It is possible to obtain a highly reliable semiconductor device which can be connected to the semiconductor device and does not cause a short circuit.

  As a result, the semiconductor laminated body is exposed without being covered with the protective film, and for example, the semiconductor element is tilted in the direction of L in FIG. 1B so that a part of the exposed semiconductor laminated body approaches the wiring pattern. Also in this case, the semiconductor element can be electrically connected to the base without contacting the n-type or p-type semiconductor layer in the semiconductor laminated body with the wiring pattern of the opposite conductivity type, and a short circuit does not occur, and reliability is high. A semiconductor device can be manufactured.

The semiconductor device and the manufacturing method thereof according to the first embodiment will be specifically described below with reference to the drawings.
As shown in FIGS. 1A and 1B, a semiconductor device 10 of this embodiment is configured by mounting a light emitting element 1 as a semiconductor element on a base 13. In FIGS. 1A and 1B, a joining member for connecting the light emitting element 1 to the base 13 is omitted.

  As shown in FIG. 1C, the light emitting element 1 includes a semiconductor laminate 6 in which an n-type semiconductor layer 3, a light emitting layer 4, and a p-type semiconductor layer 5 are sequentially laminated, and an upper surface of the semiconductor laminate 6, that is, On the upper surface of the p-type semiconductor layer 5, the p electrode connected to the p-type semiconductor layer 5 and a part of the p-type semiconductor layer 5 on the upper surface of the semiconductor stacked body 6 are removed in a groove shape inside the semiconductor stacked body 6. Then, the n-type semiconductor layer 3 is exposed, and the exposed upper surface of the n-type semiconductor layer 3 has an n-electrode connected to the n-type semiconductor layer 3. The planar shape of the light emitting element 1 is, for example, a substantially square having a side of 600 μm.

The n-electrode is an n-side ohmic electrode layer through an n-side ohmic electrode layer 7a that makes ohmic contact with the upper surface of the n-type semiconductor layer 3 and an insulating multilayer structure film 8 that covers a part of the n-side ohmic electrode layer 7a. 7a and an n-side internal electrode layer 9a electrically connected to the n-side external electrode layer 11a.
The p-electrode is a p-side ohmic electrode layer via a p-side ohmic electrode layer 7b which is in ohmic contact with the upper surface of the p-type semiconductor layer 5 and an insulating multilayer structure film 8 which covers a part of the p-side ohmic electrode layer 7b. 7b, and a p-side internal electrode layer 9b electrically connected to 7b and a p-side external electrode layer 11b.

  A plurality of through holes are formed in the insulating multilayer structure film 8, and the n-side ohmic electrode layer 7a and the n-side internal electrode layer 9a are electrically connected through the through holes, and the p-side ohmic electrode is formed. The layer 7b and the p-side internal electrode layer 9b are electrically connected. Further, the multilayer structure film 8 functions as a protective film that covers a part of the side surface of the semiconductor laminated body 6 and exposes a part thereof.

On top of the n-side internal electrode layer 9a and the p-side internal electrode layer 9b, the second insulating layer 12 having an opening 12a on the n-side internal electrode layer 9a and the n-side internal electrode layer 9b, respectively (SiO _2, thickness: About 1 μm) is formed. An n-side external electrode layer 11a connected to the n-side internal electrode layer 9a is formed on the second insulating layer 12 through an opening 12a arranged on the n-side internal electrode layer 9a. A p-side external electrode layer 11b connected to the p-side internal electrode layer 9b is formed via an opening 12a arranged on the p-side internal electrode layer 9b.

The n-side external electrode layer 11a is arranged from above the n-side internal electrode layer 9a to above the p-side internal electrode layer 9b arranged above the p-type semiconductor layer 5. The p-side external electrode layer 11b is arranged from above the p-side internal electrode layer 9b to above the n-side internal electrode layer 9a arranged above the n-type semiconductor layer 3.
The upper surfaces of the n-electrode and the p-electrode, that is, the upper surfaces of the n-side external electrode layer 11a and the p-side external electrode layer 11b are arranged at the same height as the surface of the p-type semiconductor layer 5.

  As shown in FIGS. 1A, 1B, and 1D, the base 13 has a first wiring pattern 15 and a second wiring pattern 16 formed on the surface of the base material 14. A pair of external wirings 19 are connected to the first wiring pattern 15 and the second wiring pattern 16, and electric power is supplied. The pair of external wirings 19 may be connected to a known connector or the like provided on the base 13. 1E and 1F show enlarged views of the dotted frame in FIG. 1D.

  The first wiring pattern 15 has a first connecting portion 15a that extends in a convex shape toward the second wiring pattern 16 side, and the second wiring pattern 16 extends in a convex shape toward the first connecting portion 15a side, It has the 2nd connection part 16a whose area is larger than the connection part 15a. Each of the first connecting portion 15a and the second connecting portion 16a has a quadrangular shape in plan view.

A concave pattern 15b is formed in the vicinity of a portion of the first connection portion 15a extending from the first wiring pattern 15 along two opposing sides of the first connection portion 15a. The concave pattern 15b is a portion where the first wiring pattern 15 is formed in a concave shape. In the vicinity of the portion of the second connection portion 16a extending from the second wiring pattern 16, a concave pattern 16b is formed along the two opposite sides of the second connection portion 16a. The concave pattern 16b is a portion where the second wiring pattern 16 is formed in a concave shape.
The area difference between the first connecting portion 15a and the second connecting portion 16a is set because the extension length of the second connecting portion 16a extending in a convex shape is longer than that of the first connecting portion 15a. In other words, the length of the concave pattern 15b (the length in the arrow L direction in FIG. 1B) is set to be longer than the length of the concave pattern 16b (the length in the arrow L direction in FIG. 1B).

  As shown in FIG. 1D, the first electrode of the light emitting element 1 faces the first connecting portion 15a and is connected by the first joining member 17, and the second electrode faces the second connecting portion 16a. Are connected by a second joining member 18 having a maximum thickness larger than that of the first joining member 17. In other words, the light emitting element 1 is inclined so as to be closer to the first connecting portion side than the second connecting portion side. Further, in other words, the joint area between the first joint member 17 and the first wiring pattern 15 is larger than the joint area between the second joint member 18 and the second wiring pattern 16. With such a configuration, the shortest distance s between the exposed side surface of the n-type semiconductor layer 3 and the second bonding member 18 is smaller than the shortest distance q between the exposed side surface of the n-type semiconductor layer 3 and the first bonding member 17. It can be placed long (FIGS. 1E, 1F). The first joining member 17 and the second joining member 18 are made of SnCu solder and are arranged in the same amount. The maximum thickness of the first joining member 17 is 40 μm, and the maximum thickness of the second joining member 18 is 60 μm.

  With such an arrangement of the first bonding member 17 and the second bonding member 18, the light emitting element 1 has a surface opposite to the surface provided with the n-electrode and the p-electrode, that is, the upper surface of the substrate 2 with respect to the surface of the base 13. It is arranged at an angle of 3°. In other words, in the light-emitting element 1, the n-electrode side opposite to the surface including the n-electrode and the p-electrode is closer to the surface of the base body 13 than the p-electrode side.

Such a semiconductor device 10 can be formed by the following manufacturing method.
First, the base 13 and the light emitting element 1 described above are prepared.
Next, in the light emitting element 1, the n electrode of the light emitting element 1 faces the first wiring pattern 15 via the first bonding member 17, and the p electrode of the light emitting element 1 faces the second wiring pattern 16 via the second bonding member 18. Is arranged on the base 13 so as to face the substrate.

  Then, the first joining member 17 and the second joining member 18 are melted by reflow. Therefore, the light emitting element 1 arranged on the substrate 13 is inserted into a reflow furnace heated to 240° C. and maintained for 30 seconds. After that, the base 13 is taken out from the reflow furnace so that the first bonding member 17 has a maximum thickness larger than that of the second bonding member 18, and the spreading area to the surface of the second wiring pattern 16 (that is, The first joining member 17 and the second joining member 18 can be solidified so that the joining area) becomes larger than that of the first wiring pattern 15.

[Second Embodiment]
As shown in FIG. 2, the semiconductor device 20 of the second embodiment has a simple shape in which the first wiring pattern 25 and the second wiring pattern 26 only project in a rectangular shape, and the first connection portion 25a and the first connection portion 25a The semiconductor device 10 has the same configuration as the semiconductor device 10 of the first embodiment except that the two-connection portion 26a is formed.
This semiconductor device 20 also has the same effect as the semiconductor device 10.

  The method for manufacturing a semiconductor device according to the embodiment of the present invention makes it possible to easily obtain a semiconductor device which is small and lightweight and has a high light extraction efficiency and a semiconductor device having excellent contrast. These semiconductor devices are widely used in various devices such as various display devices, lighting fixtures, displays, backlight light sources for liquid crystal displays, digital video cameras, facsimiles, copiers, image reading devices such as scanners, and projector devices. be able to.

1 Light emitting element (semiconductor element)
2 substrate 3 n-type semiconductor layer (first semiconductor layer)
4 light emitting layer 5 p-type semiconductor layer (second semiconductor layer)
6 semiconductor laminated body 7a n side ohmic electrode layer 7b p side ohmic electrode layer 8 multilayer structure film 9a n side internal electrode layer 9b p side internal electrode layer 9 internal electrode layer 10 semiconductor device 11a n side external electrode layer 11b p side external electrode Layer 12 Second insulating layer (protective film)
Reference Signs List 13 Base 14 Base 15 First Wiring Pattern 15a First Connection 15b Recessed Pattern 16 Second Wiring Pattern 16a Second Connection 16b Recessed Pattern 17 First Joining Member 18 Second Joining Member 19 External Wiring

Claims (17)

A semiconductor stack in which a second semiconductor layer is stacked on a first semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a first electrode electrically connected to the second semiconductor layer. A second electrode disposed on the same surface as the first electrode, and a semiconductor element including a protective film that covers a side surface of the second semiconductor layer and exposes at least a part of a side surface of the first semiconductor layer;
A base having a first wiring pattern and a second wiring pattern;
A first joint member and a second joint member,
The first wiring pattern has a first connection portion that extends in a convex shape toward the second wiring pattern,
The second wiring pattern has a second connection part that extends in a convex shape toward the first connection part and has a larger area than the first connection part,
The first electrode faces the first connecting portion and is connected to the first connecting portion by the first joining member,
The semiconductor device, wherein the second electrode faces the second connecting portion and is connected to the second connecting portion by the second joining member having a maximum thickness larger than that of the first joining member. .. A semiconductor stack in which a second semiconductor layer is stacked on a first semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a first electrode electrically connected to the second semiconductor layer. A second electrode disposed on the same surface as the first electrode, and a semiconductor element including a protective film that covers a side surface of the second semiconductor layer and exposes at least a part of a side surface of the first semiconductor layer;
A base having a first wiring pattern and a second wiring pattern;
A first joint member and a second joint member,
The first wiring pattern has a first connection portion that extends in a convex shape toward the second wiring pattern,
The second wiring pattern has a second connection part that extends in a convex shape toward the first connection part and has a larger area than the first connection part,
The first electrode faces the first connection portion and is connected to the first connection portion by the first joining member.
The second electrode faces the second connecting portion and is connected to the second connecting portion by the second joining member having a maximum thickness larger than that of the first joining member,
The shortest distance between the side surface of the first semiconductor layer exposed from the protective film and the second bonding member is longer than the shortest distance between the side surface of the first semiconductor layer exposed from the protective film and the first bonding member. A semiconductor device characterized by the above.   The semiconductor device according to claim 1, wherein a bonding area between the first bonding member and the first wiring pattern is larger than a bonding area between the second bonding member and the second wiring pattern.   The semiconductor device according to claim 1, wherein the first bonding member and the second bonding member are arranged in the same amount.   The semiconductor device according to claim 1, wherein the semiconductor element has a surface opposite to a surface including the first electrode closer to the surface of the base than an opposite surface to a surface including the second electrode.   The semiconductor device according to claim 1, wherein the first electrode and the second electrode are arranged at the same height with respect to the surface of the second semiconductor layer.   The joint area of the said 1st joint member and the said 1st electrode is a magnitude|size equivalent to the joint area of the said 2nd joint member and the said 2nd electrode, The any one of Claims 1-6. Semiconductor device.   The semiconductor device according to claim 1, wherein the joining member is solder. (A) A first wiring pattern and a second wiring pattern are provided, the first wiring pattern has a first connecting portion that extends in a convex shape toward the second wiring pattern, and the second wiring pattern is , A convex second connecting portion extending toward the first connecting portion and having an edge longer than the edge of the first connecting portion, and the second connecting portion has an area larger than that of the first connecting portion. Prepare a large substrate,
(B) preparing a semiconductor element having a first electrode and a second electrode on the same surface side,
(C) In the semiconductor element, the first electrode faces the first wiring pattern via the first joining member, and the second electrode faces the second wiring pattern via the second joining member, Placed on the substrate,
(D) The first joining member and the second wiring member are melted, and the surface tension of the edges of the first connecting portion and the second connecting portion causes the joining area between the first joining member and the first wiring pattern. Connecting the second bonding member and the second wiring pattern so as to be larger than the bonding area, so that the semiconductor element is closer to the base on the side of the first connecting portion than on the side of the second connecting portion. the method of manufacturing a semiconductor device including a Rukoto is inclined. (A) A first wiring pattern and a second wiring pattern are provided, the first wiring pattern has a first connecting portion that extends in a convex shape toward the second wiring pattern, and the second wiring pattern is , A convex second connecting portion extending toward the first connecting portion and having an edge longer than an edge of the first connecting portion, and a length of the second connecting portion extending in the convex shape is , Preparing a substrate longer than the length of the first connecting portion extending in the convex shape,
(B) preparing a semiconductor element having a first electrode and a second electrode on the same surface side,
(C) In the semiconductor element, the first electrode faces the first wiring pattern via the first joining member, and the second electrode faces the second wiring pattern via the second joining member, Placed on the substrate,
(D) The first joining member and the second wiring member are melted, and the surface tension of the edges of the first connecting portion and the second connecting portion causes the joining area between the first joining member and the first wiring pattern. Connecting the second bonding member and the second wiring pattern so as to be larger than the bonding area, so that the semiconductor element is closer to the base on the side of the first connecting portion than on the side of the second connecting portion. the method of manufacturing a semiconductor device including a Rukoto is inclined.   In the step (b), a semiconductor stacked body in which a first semiconductor layer and a second semiconductor layer are stacked, a first electrode connected to the first semiconductor layer, a second electrode connected to the second semiconductor layer, and the 11. The method of manufacturing a semiconductor device according to claim 9, wherein a semiconductor element is prepared which includes a protective film which covers the side surface of the second semiconductor layer and exposes at least a part of the side surface of the first semiconductor layer.   The method of manufacturing a semiconductor device according to claim 9, wherein, in the step (c), the first bonding member and the second bonding member have the same amount.   13. The method of manufacturing a semiconductor device according to claim 9, wherein in the step (d), the first joining member and the second joining member are melted by reflow.   14. In the step (a), a substrate having a convexly extending length of the second connecting portion longer than a convexly extending length of the first connecting portion is prepared. A method of manufacturing a semiconductor device according to item 1.   The manufacturing of the semiconductor device according to claim 9, wherein in the step (a), a base is prepared in which the width of the second connecting portion is equal to or narrower than the width of the first connecting portion. Method. In the step (d), the method of manufacturing a semiconductor device according to any one of claims 9 to 15 to be thicker than the maximum thickness of the first joining member the maximum thickness of the second joint member. In step (d), the shortest distance between the side surface of the first semiconductor layer exposed from the protective film and the second bonding member is the side surface of the first semiconductor layer exposed from the protective film and the first bonding member. The method for manufacturing a semiconductor device according to claim 11 , wherein the semiconductor device is made longer than the shortest distance from the semiconductor device.