JP6578801B2 - Manufacturing method of semiconductor laser device - Google Patents

Description

  The present disclosure relates to a method for manufacturing a semiconductor laser device.

  2. Description of the Related Art A method for manufacturing a semiconductor laser device is known in which a cleavage introduction groove or a laser processing groove is formed on the upper side of a wafer, and the wafer is cleaved from the upper side along these grooves (see Patent Documents 1 to 3). .

JP 2009-200688 A JP 2010-199482 A JP 2011-2111244 A

  However, when a split groove is formed on the upper side of the wafer, a part of the upper side of the wafer is altered by laser processing or the like performed at the time of forming the split groove. For this reason, in particular, when the semiconductor laser element is subjected to junction down mounting (mounting with the upper surface side of the semiconductor laser element as a mounting surface), the altered portion may come into contact with solder or the like used for mounting and cause a short circuit. Therefore, it is preferable to form the split groove on the lower side of the wafer. In this way, when the wafer is cleaved, the cleavage that has progressed from the split groove on the lower surface side of the wafer is introduced for cleavage introduction on the upper side of the wafer. There is a risk that an end surface abnormality such as a streak or a step may occur on the cleaved end surface without matching with the groove.

  Such an end surface abnormality does not occur when a groove for cleaving introduction is not formed on the upper side of the wafer, but in this case, each semiconductor is marked with the groove for cleaving introduction before the wafer is separated. The outer edge of the laser element cannot be specified. Therefore, even if a defect is found before separation, it becomes difficult to grasp which of the individual semiconductor laser elements manufactured from the wafer affects it, and the individual is determined based on the result of the non-defective product inspection before separation. It becomes difficult to remove defective products after separation.

  The above problem can be solved by, for example, the following means.

  A step of preparing a wafer having a substrate and a semiconductor laminate disposed on the upper surface of the substrate; and a first separation distance and a second separation distance shorter than the first separation distance above the semiconductor laminate. Forming a plurality of recesses so as to be alternately repeated along the first direction, forming a ridge extending in the first direction on the upper side of the semiconductor stacked body, and forming an electrode in a region including the upper surface of the ridge A straight line passing through one of the two recesses formed at the second separation distance in parallel to the second direction intersecting the first direction, and the two recesses A step of arranging a part of the electrode in a region sandwiched between a straight line passing through the other in parallel to the second direction, and a wafer along the second direction in the region sandwiched between the two straight lines Cleaving and cleaving Method for producing a body laser element.

  According to the above manufacturing method, the outer edge of each semiconductor laser element can be specified from a relatively early stage of the manufacturing process. This makes it possible to accurately grasp which of the individual semiconductor laser elements manufactured from the wafer will be affected by defects found before singulation, even when the cleavage introduction groove is not formed on the upper side of the wafer. In addition, the defective product can be appropriately removed after the separation based on the result of the non-defective product inspection before the separation.

FIG. 6 is a schematic top view illustrating the method for manufacturing the semiconductor laser element according to the first embodiment. It is AA sectional drawing in FIG. 1A. FIG. 6 is a schematic top view illustrating the method for manufacturing the semiconductor laser element according to the first embodiment. It is BB sectional drawing in FIG. 2A. It is CC sectional drawing in FIG. 2A. FIG. 6 is a schematic top view illustrating the method for manufacturing the semiconductor laser element according to the first embodiment. FIG. 6 is a schematic top view illustrating the method for manufacturing the semiconductor laser element according to the first embodiment. FIG. 6 is a schematic top view illustrating the method for manufacturing the semiconductor laser element according to the first embodiment. FIG. 10 is a schematic top view illustrating a method for manufacturing a semiconductor laser element according to Embodiment 2. 6 is a schematic top view of a semiconductor laser element obtained by the manufacturing method according to Embodiment 1. FIG. It is DD sectional drawing in FIG. 7A. It is EE sectional drawing in FIG. 7A. It is a conceptual diagram (the 1) which shows an example of cleavage. It is a conceptual diagram which shows an example of cleavage (the 2).

[Method of Manufacturing Semiconductor Laser Device According to Embodiment 1]
1A to 5 are schematic views for explaining the method for manufacturing a semiconductor laser device according to the first embodiment. 1A, 2A, and FIGS. 3 to 5 are top views of the wafer, FIG. 1B is a cross-sectional view taken along the line AA in FIG. 1A, and FIG. 2B is a cross-sectional view taken along the line BB in FIG. 2C is a cross-sectional view taken along the line CC in FIG. 2A. As shown in FIGS. 1A to 5, the method for manufacturing a semiconductor laser device according to the first embodiment includes a step of preparing a wafer 1 having a substrate 10 and a semiconductor stacked body 20 disposed on the upper surface of the substrate 10. The plurality of recesses 22 are formed on the upper side of the semiconductor stacked body 20 so that the first separation distance L1 and the second separation distance L2 shorter than the first separation distance L1 are alternately repeated along the first direction Y. A step of forming, a step of forming a ridge 24 extending in the first direction Y on the upper side of the semiconductor stacked body 20, and a step of forming an electrode 44 in a region including the upper surface of the ridge 24, the second separation distance A straight line S1 passing through one of the two recesses 22 formed by L2 in parallel to the second direction X intersecting the first direction Y, and the other of the two recesses 22 in the second direction X. Sandwiched between the straight line S2 that passes parallel to With that placing a portion of the electrode 44 in the region, a step of cleaving along the wafer 1 in the second direction X in the region between two straight lines S1, S2, and. Details will be described below.

(First step)
First, as shown in FIGS. 1A and 1B, a wafer 1 having a substrate 10 and a semiconductor stacked body 20 is prepared. For the substrate 10, for example, a nitride semiconductor such as GaN can be used. The semiconductor stacked body 20 is disposed on the upper surface of the substrate 10. The semiconductor stacked body 20 includes, for example, an n-side semiconductor layer 20c, an active layer 20b, and a p-side semiconductor layer 20a in order from the substrate 10 side. Each of these layers is formed using a nitride semiconductor, for example. The n-side semiconductor layer 20c is usually composed of a plurality of n-type semiconductor layers, but some layers may be undoped layers. The p-side semiconductor layer 20a is usually composed of a plurality of p-type semiconductor layers, but some of the layers may be undoped layers. The active layer 20b can have a multiple quantum well structure or a single quantum well structure.

(Second step)
Next, as shown in FIGS. 2A to 2C, a plurality of first separation distances L <b> 1 and second separation distances L <b> 2 are alternately repeated along the first direction Y on the upper side of the semiconductor stacked body 20. A recess 22 is formed. Further, a ridge 24 extending in the first direction Y is formed on the upper side of the semiconductor stacked body 20. The order of forming the plurality of recesses 22 and ridges 24 is not limited, and any of them may be formed first. The plurality of concave portions 22 and the ridge 24 are formed so as to be separated from each other.

  After the recess 22 formation step, it is possible to specify the entire outer periphery (an example of the outer edge) of each semiconductor laser element with the recess 22 as a mark. Specifically, in advance, the recess 22 is positioned away from the outer edge of each semiconductor laser element in the first direction Y (the extending direction of the ridge 24) and the second direction X (the direction parallel to the cleavage end surface). It is decided whether to form. Thereby, after forming the recess 22, it is possible to grasp that the outer edge of each semiconductor laser element exists in a predetermined direction and distance from the recess 22 with the recess 22 as a reference. More specifically, for example, the image recognition apparatus captures an image of the wafer 1 and compares the obtained actual image with the model image so that the concave portion 22 and the open shape appearing in the actual image are displayed in the model image. Match with the recess 22. Thereby, the recess 22 is specified in the actual image, and the outer edge of the semiconductor laser element is specified in the actual image with the specified recess 22 as a reference.

  The plurality of recesses 22 are arranged so as to repeat a first separation distance L1 and a second separation distance L2 shorter than the first separation distance L1. In this way, since the first separation distance L1 and the second separation distance L2 are different in length, it is possible to distinguish each of them when an image of the wafer 1 is taken by the image recognition apparatus. . Further, by disposing the concave portion 22 relatively close to the cleavage end surface, the specific accuracy can be improved by forming the concave portion 22 near the outer edge of each semiconductor laser element. The separation distance L1 is longer than the second separation distance L2.

  The sum of the first separation distance L1 and the second separation distance L2 (first separation distance L1 + second separation distance L2) is the total length of one semiconductor laser element (light from the light emitting surface of one semiconductor laser element). Equal to (or nearly equal to) the length to the reflecting surface).

  The second separation distance L2 is preferably less than half of the first separation distance L1, and the first separation distance L1 is an approximate total length of one semiconductor laser element (the light of one semiconductor laser element). It is more preferable that the length be short enough to be equal to the length from the exit surface to the light reflection surface. In this way, since the concave portion 22 can be disposed near the cleavage end face, the accuracy of specifying the outer edge of each semiconductor laser element can be further improved.

  The plurality of recesses 22 preferably have sides parallel to the second direction X (direction parallel to the cleaved end face) in the top view of the semiconductor stacked body 20. Specifically, the recess 22 preferably has a shape such as a rectangular shape having such parallel sides or a so-called U-shape obtained by removing one side from the rectangle. This is because the parallel sides are straight lines, so that image recognition is easier compared to curves. In the case of having parallel sides, the front and back of each semiconductor laser element in the length direction of each semiconductor laser element (that is, the position of the cleaved end face and an example of the outer edge) can be specified with high accuracy. As will be described later, since the cleavage is performed in the fourth step, the cleavage end surface referred to here means a position where the cleavage end surface is formed by the fourth step. The first direction Y is a direction that intersects the second direction X, and is typically a direction perpendicular to the second direction X.

  The plurality of recesses 22 are preferably located at the left and right side edges (on both sides of the ridge 24) of the region to be the semiconductor laser element in the top view of the semiconductor stacked body 20. By doing this, it is possible to identify the left and right side edges (an example of the outer edge) of the semiconductor laser element by recognizing the image of the recess 22. As will be described later, since the singulation is performed in the fifth step, the term “side edge” as used herein refers to the position where the side edge is formed by the fifth step.

  In the present embodiment, the recess 22 is formed in a recess shape that is recessed toward the ridge 24 from the left and right side edges of the region to be the semiconductor laser element in the top view of the semiconductor stacked body 20. Instead of this, a protrusion formed on the opposite side of the ridge 24 may be used. However, since it is necessary to increase the width of each semiconductor laser element when forming it into a convex shape, it is more necessary to form a concave shape without increasing the width from a single wafer 1. Can be produced.

  The plurality of recesses 22 are preferably located in the vicinity of the four corners of the region that becomes the semiconductor laser element in the top view of the semiconductor stacked body 20. In this way, the positions of the recess 22 and the four corners (an example of the outer edge) of the semiconductor laser element are close to each other, so that the four corners (an example of the outer edge) of each semiconductor laser element can be specified with high accuracy.

  The area of each recess 22 (more preferably, the total area of all recesses 22 formed above one semiconductor laser element) is 1 of the total area of one semiconductor laser element when the semiconductor stacked body 20 is viewed from above. 0.5% or less is preferable, and 0.3% or less is more preferable. In this way, it is possible to secure a sufficient area where electrodes can be formed on the upper surface of the semiconductor stacked body 20.

  The total area of the region from which a part of the semiconductor stacked body 20 is removed in a top view of the semiconductor stacked body 20 including the area of the recess 22 is preferably 35% or less of the entire area of one semiconductor laser element. More preferably, it is 15% or less (however, the removal region does not include a region removed when the ridge 24 is formed). In this way, it is possible to further sufficiently secure a region where an electrode can be formed on the upper surface of the semiconductor stacked body 20.

The area of each recess 22 is preferably 25 μm ² or more in the top view of the semiconductor stacked body 20. Moreover, when the top view shape of the recessed part 22 is a rectangle as shown to FIG. 2A, it is preferable that the length of one side is 5 micrometers or more. In this way, it is possible to recognize the image of the recess 22 satisfactorily.

The plurality of recesses 22 are formed, for example, by removing the p-side semiconductor layer 20a and part of the active layer 20b by etching or the like to expose the n-side semiconductor layer 20c. For example, after a SiO ₂ film is formed on the wafer 1, a photoresist is applied, and exposure is performed using a mask on which a predetermined pattern is drawn. Thereafter, the exposed photoresist is developed, the SiO ₂ film is etched using a resist mask, and the resist is removed. Then, the p-side semiconductor layer 20a and a part of the active layer 20b are etched using the SiO ₂ film remaining without being etched.

  The ridge 24 is formed by removing a part of the p-side semiconductor layer 20a, for example. The region where the ridge 24 is formed becomes an optical waveguide region.

(Third step)
Next, as shown in FIG. 3, an electrode 44 is formed in a region including the upper surface of the ridge 24. Here, a part of the electrode 44 includes a straight line S1 passing through one of the two concave portions 22 formed at the second separation distance L2 in parallel with the second direction X, and the two concave portions 22 Is disposed in a region sandwiched between a straight line S2 that passes in parallel with the second direction X. In this way, in the semiconductor laser element after separation, the concave portion 22 is arranged farther from the cleaved end face (light emitting face and light reflecting face) than the end of the electrode 44. On the cleaved end face side, the concave portion 22 can be suppressed from affecting the near-field image (NFP) and far-field image (FFP) of the laser light.

  More specifically, in this embodiment, as shown in FIG. 3, the second direction (the direction parallel to the cleavage end face) is the X direction, and the first direction (the extending direction of the ridge 24) is the Y direction. When the Y coordinate of the recess 22 is Y1, the Y coordinate of the other recess 22 is Y2, and the Y coordinate of the end of the electrode 44 is Y3, Y3 is located between Y1 and Y2. That is, the cleavage is set between two adjacent Y3 (that is, between the ends of the electrode 44). Thus, by not positioning the electrode 44 in a region located directly above the cleavage end surface in the upper surface of the semiconductor stacked body 20, it is possible to prevent the electrode 44 from dripping and adhering to the cleavage end surface during cleavage. Therefore, the influence of the electrode 44 on the shape of the laser beam can be suppressed. In the present embodiment, the end of the electrode 44 is positioned on a straight line connecting a pair of recesses 22 separated by a second separation distance L2.

  As shown in FIG. 3, the electrode 44 is preferably formed at a position away from the recess 22 in the top view of the semiconductor stacked body 20. In the recess 22, since the layer (eg, n-side semiconductor layer 20 c) on the lower side of the semiconductor stacked body 20 is exposed, the electrode 44 overlaps the recess 22 in the top view of the semiconductor stacked body 20. Even if an insulating film is interposed between the two, a layer on the upper side of the semiconductor stacked body 20 (eg, p-side semiconductor layer 20a) and a layer on the lower side (eg, n-side semiconductor layer 20c) This is because they are easily short-circuited.

  As shown in an enlarged manner in FIG. 3, the electrode 44 preferably has a trapezoidal recess in a top view of the semiconductor stacked body 20, and the recess 22 is preferably disposed at a position surrounded by the recess. In this way, it is possible to avoid the overlapping of the electrode 44 and the recess 22 in the top view of the semiconductor stacked body 20. In addition, compared with the case where the recess of the electrode 44 is rectangular, the electrode 44 can be brought close to the recess 22 in the top view of the semiconductor stacked body 20, and the reduction in the area of the electrode 44 can be suppressed. The trapezoidal depression is preferably a shape in which the longer side of the pair of parallel sides of the trapezoid is removed. Furthermore, it is preferable to form the electrode 44 so that the concave portion 22 enters the position where the removed side is located.

  A groove 26 extending in the first direction Y may be formed between the semiconductor laser elements. In this way, for example, the wafer 1 is divided in the vicinity of the center line F (position indicated by the broken line in the drawing) of the groove 26 extending in the first direction Y, and separated into individual semiconductor laser elements. Can do. As shown in an enlarged manner in FIG. 3, the recesses 22 of the two semiconductor laser elements adjacent to the left and right may be connected by the groove 26 described above. In the present embodiment, the grooves 26 and the recesses 22 extending in the first direction Y are formed in a lump, but the order of formation of both is not particularly limited.

(4th process)
Next, as shown in FIG. 4, the wafer 1 is cleaved along the second direction X within a region sandwiched between the two straight lines S <b> 1 and S <b> 2 described above. Specifically, for example, a broken groove P along the cleavage surface of the wafer 1 is formed on the lower side of the substrate 10 by laser irradiation, and then the pressing member 60 is pressed to press the upper surface of the semiconductor stacked body 20. As a result (see FIG. 8A), the wafer 1 is cleaved (see FIG. 8B). The “cleavage surface” of the wafer 1 is not a “cleavage end surface” of the semiconductor laser element formed after singulation, but a surface that is easy to cleave in the wafer 1. For example, a crystal cleavage plane (eg, GaN M-plane) constituting the substrate 10 and a crystal cleavage plane constituting the semiconductor laminate 20 correspond to the “cleavage plane” of the wafer 1. A blade (blade) or the like can be used for the pressing member 60. In addition, the shape of the dividing groove P is not limited to a broken line shape, and the pressing method is not limited to the method using the pressing member 60.

  On the upper side of the semiconductor stacked body 20 (specifically, the position at which the cleaved end face is formed on the upper side of the semiconductor stacked body 20), grooves for cleaving are introduced (recesses recessed from the left and right ends of the semiconductor laser element toward the ridge 24). ) Is preferably not formed. In this case, there is no problem that the cleavage proceeding from the split groove P on the lower surface side of the wafer does not coincide with the cleavage introduction groove on the upper side of the wafer, so that vertical stripes are formed on the cleavage end face of each semiconductor laser element. It is possible to prevent the occurrence of an end surface abnormality such as a step or a step. In addition, as shown in FIG. 4, the groove | channel 26 extended | stretched to the 1st direction Y may exist. For the same reason, it is preferable that there are no various irregularities including grooves for cleaving at the position where the cleavage end face is formed, except for the ridge 24.

  The cleavage end face (light emitting surface, light reflecting surface) of each semiconductor laser element is preferably formed at a position separated from the recess 22, and specifically, the cleavage end face is formed at a position separated from the recess 22 by 50 μm or more. It is preferable to do. If it does in this way, the influence which crevice 22 has on cleavage can be controlled effectively. The cleavage plane may be formed in the middle of the second separation distance L2, but may be formed in a position shifted from the middle of the second separation distance L2.

(5th process)
Next, as shown in FIG. 5, a piece of the wafer 1 obtained by cleavage is divided along a direction (first direction Y) perpendicular to the cleavage end face, and is divided into individual semiconductor laser elements. Such division is performed by, for example, laser scribe or cutter scribe to break a piece of the wafer 1. Note that the order of the fourth step and the fifth step may be interchanged. That is, the cleavage along the second direction X can be performed after the division along the first direction Y.

  According to the manufacturing method according to the present embodiment described above, the outer edge of each semiconductor laser element can be specified from a relatively early stage of the manufacturing process. Therefore, even when the cleavage introduction groove is not formed on the upper side of the wafer 1 (semiconductor laminate 20), for example, in the form of “elements in which rows and columns in the wafer 1”, before the separation. Accurately grasp which semiconductor laser device on the wafer 1 is affected by the found defects (eg, formation defects, dust adhesion), and identify defective products after separation based on the results of good product inspection before separation. Can be removed properly.

  According to the present embodiment, if the outer edge of the semiconductor laser element is specified using a set of recesses 22 as a clue, the individual laser diode elements can be identified as compared to the case where the outer edge of the semiconductor laser element is specified using a single recess 22 as a clue. The direction can be correctly specified, and the outer edge can be specified with high accuracy. In general, since the range (field of view) that can be photographed by the image recognition apparatus is limited, two semiconductor laser elements adjacent to the extending direction (first direction) Y of the ridge 24 are completely contained in one field of view. It is difficult. Therefore, an image is taken so that each of the recesses 22 formed on the upper side of the two adjacent semiconductor laser elements can be accommodated in one field of view, and the shape of each recess 22 appearing in the taken image and the rough shape are displayed on the model image. It is not practical to specify the direction of the semiconductor laser element by matching the two recesses.

  The pair of recesses 22 that are separated by the first separation distance L1 are separated only by the approximate total length of one semiconductor laser element at most. Therefore, according to the present embodiment, even when the outer edge of the semiconductor laser element is specified by using a set of recesses 22 as a clue, the imaging range is narrowed to about the cavity length of one semiconductor laser element, Photography can be performed at a magnification. Therefore, since the image can be recognized even with a fine pattern, the size of the recess 22 can be reduced. In addition, the image taken at a high magnification can be used to check not only the recesses 22 but also the formation defects of each member, so that the formation defects can be detected reliably and efficiently from the initial stage of the manufacturing process. can do. That is, the image used for the image recognition of the recess 22 can be used for an appearance inspection for inspecting a formation defect or the like (the appearance inspection and the image recognition of the recess 22 can be performed with one image). Shooting for image recognition and shooting for appearance inspection do not need to be performed separately at different magnifications, and are more efficient than performing image recognition and appearance inspection of the recess 22 using different images shot separately. Is good.

  If the laser processing groove P for cleavage is formed on the lower side of the wafer 1, unlike the case where the groove is formed on the upper side of the wafer 1, a portion that has been altered by laser processing when the semiconductor laser element is mounted junction-down. However, there is no possibility of causing a short circuit between the electrode of the external substrate and the semiconductor laminate 20 due to contact with solder or the like. Therefore, this embodiment is particularly suitable for manufacturing a semiconductor laser device to be mounted with junction down.

(Two-dimensional code)
A two-dimensional code can be formed on the upper surface of the semiconductor stacked body 20. As the two-dimensional code, a predetermined shape that can have position information of each semiconductor laser element on the wafer 1 can be used. By using such a two-dimensional code, it becomes easy to select the semiconductor laser elements whose appearance abnormality has been detected before the singulation after the wafer 1 is singulated (after the fifth step). The two-dimensional code is formed using, for example, a metal material at a position separated from the electrode on the upper surface of the semiconductor stacked body 20.

(Groove for suppressing ripples in FFP)
A groove for suppressing ripple generation of a far field image (FFP) can be formed on the upper surface of the semiconductor stacked body 20. The ripple for suppressing the ripple generation of the FFP is a groove that absorbs unnecessary light, and is formed in the vicinity of the light emitting surface from which laser light is emitted (near the cleavage end surface), specifically, between the electrode 44 and the cleavage end surface. .

(Other)
Members such as the insulating film 30, the upper electrode (eg, p electrode), and the lower electrode (eg, n electrode) 50 can be formed on the surface of the semiconductor stacked body 20. The upper electrode (eg, p-electrode) can include a first upper electrode 42 that contacts the upper surface of the ridge 24 and a second upper electrode (pad electrode) 44 that contacts the first upper electrode 42. In this case, the electrode formed in the third step corresponds to the second upper electrode (pad electrode) 44. Note that the first upper electrode 42 is also preferably formed such that its end is closer to the cleaved end surface than the recess 22.

(Visual inspection)
The appearance inspection is performed after forming the plurality of recesses 22 and then at various stages before separation (for example, after forming the two-dimensional code, forming the insulating film 30, then forming the upper electrodes 42 and 44, After the lower electrode 50 is formed). Therefore, from a relatively early stage of the manufacturing process, formation defects on the wafer 1 and adhesion of dust are detected at an early stage, and the semiconductor laser element affected by the defects is recorded. It can be removed as a defective product after conversion.

[Method of Manufacturing Semiconductor Laser Element According to Embodiment 2]
FIG. 6 is a schematic top view illustrating the method for manufacturing the semiconductor laser device according to the second embodiment. As shown in FIG. 6, in the method for manufacturing a semiconductor laser device according to the second embodiment, two concave portions 22 are formed at two corners (upper right and lower left, Alternatively, the method is different from the manufacturing method of the semiconductor laser device according to the first embodiment in which the four concave portions 22 are positioned in the vicinity of the four corners of each semiconductor laser device. Also by the semiconductor laser device manufacturing method according to the second embodiment, the entire outer periphery (an example of the outer edge) of the semiconductor laser device can be specified. According to the manufacturing method of the semiconductor laser device according to the second embodiment, the total area of the recesses 22 can be made smaller than that of the manufacturing method of the semiconductor laser device according to the first embodiment. be able to.

  In FIG. 6, when one of the four corners of the semiconductor laser element is set as the center of symmetry, the plurality of recesses 22 are arranged so that the positional relationship of the recesses 22 is 180-degree rotationally symmetric when the wafer 1 is viewed from above. The form formed is shown. However, the plurality of recesses 22 can also be arranged so that the positional relationship of the recesses 22 is axisymmetric when the target axis is the direction X parallel to the cleavage end face in the top view of the semiconductor stacked body 20.

[Semiconductor Laser Device Obtained by Manufacturing Method According to Embodiments 1 and 2]
7A is a schematic top view of the semiconductor laser device obtained by the manufacturing method according to Embodiment 1, FIG. 7B is a DD cross-sectional view in FIG. 7A, and FIG. 7C is a cross-sectional view along EE in FIG. 7A. FIG. As shown in FIGS. 7A to 7C, the semiconductor laser device obtained by the manufacturing method according to Embodiment 1 is formed on the substrate 10, the semiconductor stacked body 20 formed on the substrate 10, and the semiconductor stacked body 20. Upper electrodes (p electrodes) 42, 44 and lower electrodes (n electrodes) 50, a ridge 24 formed on the semiconductor stacked body 20, an insulating film 30 formed on the semiconductor stacked body 20, and a semiconductor stacked body 20 and a plurality of recesses 22 formed in 20. Although the semiconductor laser device obtained by the manufacturing method according to the second embodiment is not illustrated, the semiconductor laser device obtained by the manufacturing method according to the second embodiment is also the same as the embodiment except for the position where the plurality of recesses 22 are formed. 1 has the same configuration as the semiconductor laser device obtained by the manufacturing method according to 1.

  Although the embodiments have been described above, these descriptions do not limit the configurations described in the claims.

DESCRIPTION OF SYMBOLS 1 Wafer 10 Substrate 20 Semiconductor laminated body 20a P side semiconductor layer 20b Active layer 20c N side semiconductor layer 22 Recess 24 Ridge 26 Groove 30 Insulating film 42 First upper electrode 44 Second upper electrode (electrode)
50 Lower electrode 60 Pressing member F Center line L1 First separation distance L2 Second separation distance P Split groove S1 Straight line S2 Straight line X Second direction (direction parallel to the cleaved end face)
Y first direction (stretching direction of ridge)
Y1 Y coordinate of one recess Y2 Y coordinate of the other recess Y3 Y coordinate of the end of the electrode

Claims (6)

Preparing a wafer having a substrate and a semiconductor laminate disposed on the upper surface of the substrate;
Forming a plurality of recesses on the upper side of the semiconductor stacked body such that a first separation distance and a second separation distance shorter than the first separation distance are alternately repeated along a first direction;
Forming a ridge extending in the first direction on the semiconductor laminate;
Forming an electrode in a region including the upper surface of the ridge, wherein one of the two recesses formed at the second separation distance is parallel to a second direction intersecting the first direction. Disposing a part of the electrode in a region sandwiched between a straight line passing through and a straight line passing through the other of the two recesses in parallel to the second direction;
Cleaving the wafer along the second direction within a region sandwiched between the two straight lines,
The electrode has a trapezoidal recess in a top view of the semiconductor stack,
The recess is disposed at a position surrounded by the recess,
A method of manufacturing a semiconductor laser device. Preparing a wafer having a substrate and a semiconductor laminate disposed on the upper surface of the substrate;
Forming a plurality of recesses on the upper side of the semiconductor stacked body such that a first separation distance and a second separation distance shorter than the first separation distance are alternately repeated along a first direction;
Forming a ridge extending in the first direction on the semiconductor laminate;
Forming an electrode in a region including the upper surface of the ridge, wherein one of the two recesses formed at the second separation distance is parallel to a second direction intersecting the first direction. A part of the electrode is disposed in a region sandwiched between a straight line passing through and a straight line passing through the other of the two recesses in parallel to the second direction, and an end of the electrode is Positioning the set of recesses separated by the second separation distance on a straight line; and
Have a, a step of cleaving along the wafer in the second direction in the region between the two straight lines,
In the step of forming the electrode in a region including the upper surface of the ridge, the electrode is formed at a position away from the recess in a top view of the semiconductor stacked body .   3. The step of cleaving the wafer includes cleaving the wafer by pressing an upper surface of the semiconductor stacked body after forming a split groove on a lower side of the substrate. Manufacturing method of the semiconductor laser device.   4. The method of manufacturing a semiconductor laser device according to claim 1, wherein the plurality of recesses have sides parallel to the second direction in a top view of the semiconductor stacked body. 5.   5. The method of manufacturing a semiconductor laser device according to claim 1, wherein the plurality of recesses are positioned at left and right side edges of the semiconductor laser device in a top view of the semiconductor stacked body. . 6. The method of manufacturing a semiconductor laser device according to claim 1, wherein the plurality of recesses are positioned near four corners of the semiconductor laser device in a top view of the semiconductor stacked body.

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