JP6564506B2 - LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - Google Patents

Description

One embodiment of the present invention relates to a light-emitting element in which an organic compound that can emit light by applying an electric field is sandwiched between a pair of electrodes, and a light-emitting device, an electronic device, and a lighting device each having such a light-emitting element.

A light-emitting element using an organic compound having characteristics such as thin and light weight, high-speed response, and direct current low-voltage driving as a light emitter is expected to be applied to a next-generation flat panel display. In particular, a display device in which light emitting elements are arranged in a matrix is considered to be superior to a conventional liquid crystal display device in that it has a wide viewing angle and excellent visibility.

The light-emitting mechanism of the light-emitting element is such that an electron injected from the cathode and a hole injected from the anode are regenerated at the emission center of the EL layer by applying a voltage with the EL layer including a light emitter sandwiched between a pair of electrodes. The molecular excitons are combined to form molecular excitons, and when the molecular excitons relax to the ground state, they are said to emit energy and emit light. Singlet excitation and triplet excitation are known as excited states, and light emission is considered to be possible through either excited state.

With respect to such a light emitting element, improvement of the element structure, material development, and the like have been actively performed in order to improve the element characteristics (for example, see Patent Document 1).

JP 2010-182699 A

However, it is said that the light extraction efficiency of a light emitting element at present is about 20% to 30%, and the external quantum efficiency of a light emitting element using a phosphorescent compound is considered even if light absorption by a reflective electrode or a transparent electrode is taken into consideration. The limit is considered to be about 25%.

Thus, according to one embodiment of the present invention, a light-emitting element with high external quantum efficiency is provided. Another embodiment of the present invention provides a light-emitting element with a long lifetime.

One embodiment of the present invention includes a light-emitting layer between a pair of electrodes (anode and cathode), and the light-emitting layer has a first light-emitting substance (guest material) that changes triplet excitation energy into light emission, and has an electron-transport property. A first organic compound (host material) having at least a second organic compound having hole transportability (assist material) and a first light-emitting layer formed on the anode side, and triplet excitation energy It includes at least a second light-emitting substance (guest material) to be converted into light emission, a third organic compound (host material) having an electron transporting property, and a second organic compound (assist material) having a hole transporting property. In the first light-emitting layer, the first organic compound (host material) and the second organic compound (assist material) are a combination that forms an exciplex. , Second light emission In the third organic compound (host material) and the second organic compound (assist material) but is a light-emitting element which is a combination of forming an exciplex.

Another embodiment of the present invention includes a light-emitting layer between an anode and a cathode, a hole transport layer between the anode and the light-emitting layer, and electron transport between the cathode and the light-emitting layer. The light-emitting layer includes at least a first light-emitting substance that converts triplet excitation energy into light emission, a first organic compound having an electron transporting property, and a second organic compound having a hole transporting property A first light-emitting layer that is formed in contact with the hole-transporting layer, a second light-emitting substance that converts triplet excitation energy into light emission, a third organic compound having an electron-transport property, and hole transport And a second light emitting layer formed in contact with the electron transport layer, and the first light emitting layer includes a first organic compound (host material). And the second organic compound (assist material)
It is a combination that forms an exciplex, and in the second light emitting layer, the third organic compound (host material) and the second organic compound (assist material) are a combination that forms an exciplex. It is the light emitting element which does.

Note that in each of the above structures, the emission wavelength of the exciplex formed by the first organic compound (host material) and the second organic compound (assist material) of the first light emitting layer is the first organic compound (host). Material) and second organic compound (assist material) emission wavelength (fluorescence wavelength)
Compared to the above, the presence of the exciplex makes the fluorescence spectrum of the first organic compound (host material) and the fluorescence spectrum of the second organic compound (assist material) longer. It can convert into the emission spectrum located in the wavelength side. The emission wavelength of the exciplex formed by the third organic compound (host material) and the second organic compound (assist material) of the second light-emitting layer is the same as that of the third organic compound (host material) and the second organic compound (host material). Organic compounds (
Since the light emission wavelength (fluorescence wavelength) of each assist material is present on the longer wavelength side, the fluorescence spectrum of the third organic compound (host material) or the second organic compound is formed by forming an exciplex. The fluorescence spectrum of the compound (assist material) can be converted into an emission spectrum located on the longer wavelength side.

Note that in each of the above structures, the first light-emitting layer includes the anion of the first organic compound and the second
An exciplex is formed from the cation of the organic compound, and an exciplex is formed from the anion of the third organic compound and the cation of the second organic compound in the second light-emitting layer.

In the above structure, the first light-emitting layer and the second light-emitting layer each include the same second organic compound (assist material), and the first organic compound (host material) included in the first light-emitting layer ) Is characterized in that the lowest unoccupied orbital level (LUMO level) is higher than that of the third organic compound (host material) contained in the second light emitting layer.

Furthermore, in the above structure, the first light-emitting substance included in the first light-emitting layer is a substance that emits light having a shorter wavelength than the second light-emitting substance included in the second light-emitting layer. And

In the above structure, the first light-emitting substance and the second light-emitting substance are light-emitting substances that change triplet excitation energy into light emission, such as phosphorescent compounds such as organometallic complexes, and thermally activated delayed fluorescence. That is, a thermally activated delayed fluorescence (TADF: Thermally A)
Activated Delayed Fluorescence) material can be used. Further, the first organic compound and the third organic compound are mainly 10 ⁻⁶ cm ² / V.
An electron transporting material having an electron mobility of s or higher, specifically a π-deficient heteroaromatic compound, and the second organic compound mainly has a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. It is characterized by being a hole transporting material, specifically, a π-excess type heteroaromatic compound or aromatic amine compound.

One embodiment of the present invention includes not only a light-emitting device having a light-emitting element but also an electronic device and a lighting device each having the light-emitting device. Therefore, a light-emitting device in this specification refers to an image display device, a light-emitting device, or a light source (including a lighting device). Also,
A connector such as an FPC (Flexible printed circuit) is connected to the light emitting device
it) or a module with a TCP (Tape Carrier Package) attached, a module with a printed wiring board provided at the end of the TCP, or a light emitting element with C
All modules in which an IC (integrated circuit) is directly mounted by an OG (Chip On Glass) method are also included in the light emitting device.

Note that the light-emitting element which is one embodiment of the present invention can form an exciplex in each of the first light-emitting layer and the second light-emitting layer included in the light-emitting layer; A highly efficient light-emitting element can be realized.

In the light-emitting element which is one embodiment of the present invention, the excitation complex formed in the first light-emitting layer with the above-described element structure has higher excitation energy than the exciplex formed in the second light-emitting layer. Therefore, the triplet excitation energy contained in the second light-emitting layer is emitted as the first light-emitting substance (guest material) that changes the triplet excitation energy contained in the first light-emitting layer into light emission. By using a substance that emits light having a shorter wavelength than the second light-emitting substance (guest material) to be changed, light emission from the first light-emitting layer and the second light-emitting layer can be obtained at the same time. A second luminescent substance that converts a part of the excitation energy of the exciplex formed in the light emitting layer of the exciplex, which has not contributed to light emission, into light emitted from triplet excitation energy in the second light emitting layer ( It is possible to use as excitation energy to strike the material), it is possible to enhance the luminous efficiency of the light emitting element.

FIG. 6 illustrates a concept of one embodiment of the present invention. FIG. 6 illustrates a concept of one embodiment of the present invention. FIG. 14 shows calculation results according to one embodiment of the present invention. FIG. 14 shows calculation results according to one embodiment of the present invention. 4A and 4B illustrate a structure of a light-emitting element. 4A and 4B illustrate a structure of a light-emitting element. FIG. 6 illustrates a light-emitting device. FIG. 6 illustrates a light-emitting device. 6A and 6B illustrate electronic devices. 6A and 6B illustrate electronic devices. The figure explaining an illuminating device. 3A and 3B illustrate a light-emitting element. FIG. 14 shows current density-luminance characteristics of Light-emitting Element 1. FIG. 6 shows voltage-luminance characteristics of the light-emitting element 1. FIG. 11 shows luminance-current efficiency characteristics of the light-emitting element 1. FIG. 6 shows voltage-current characteristics of the light-emitting element 1. FIG. 9 shows an emission spectrum of the light-emitting element 1. FIG. 6 shows an emission spectrum of a substance used for the light-emitting element 1. FIG. 6 shows an emission spectrum of a substance used for the light-emitting element 1.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and various changes can be made in form and details without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

(About elementary processes of light emission in light-emitting elements)
First, a general elementary process of light emission in a light-emitting element using a light-emitting substance (including a phosphorescent compound or a thermally activated delayed fluorescence (TADF) material) that converts triplet excitation energy into light emission will be described. Here, a molecule on the side that gives excitation energy is referred to as a host molecule, and a molecule that receives the excitation energy is referred to as a guest molecule.

(1) When electrons and holes (holes) are recombined in the guest molecule, and the guest molecule is in an excited state (direct recombination process).

(1-1) When the excited state of the guest molecule is a triplet excited state, the guest molecule emits phosphorescence.

(1-2) When the excited state of the guest molecule is a singlet excited state The guest molecule in the singlet excited state crosses the triplet excited state and emits phosphorescence.

That is, in the direct recombination process of (1) above, as long as the intersystem crossing efficiency of the guest molecule and the phosphorescence quantum yield are high, high luminous efficiency can be obtained. The host molecule T1
The level is preferably higher than the T1 level of the guest molecule.

(2) When electrons and holes (holes) recombine in the host molecule, and the host molecule is in an excited state (energy transfer process).

(2-1) When the excited state of the host molecule is a triplet excited state When the T1 level of the host molecule is higher than the T1 level of the guest molecule, the excitation energy is transferred from the host molecule to the guest molecule. It becomes a triplet excited state. A guest molecule in a triplet excited state emits phosphorescence. The energy transfer from the T1 level of the host molecule to the level of the singlet excitation energy of the guest molecule (S1 level) is forbidden unless the host molecule emits phosphorescence, and is not likely to be the main energy transfer process. It is omitted here. That is, as shown in the following formula (2-1), energy transfer from the triplet excited state (3H *) of the host molecule to the triplet excited state (3G *) of the guest molecule is important (where 1G is the guest The singlet ground state of the molecule, 1H represents the singlet ground state of the host molecule).

  3H * + 1G → 1H + 3G * (2-1)

(2-2) When the excited state of the host molecule is a singlet excited state When the S1 level of the host molecule is higher than the S1 level and T1 level of the guest molecule, the excitation energy is transferred from the host molecule to the guest molecule. The guest molecule is in a singlet excited state or a triplet excited state. A guest molecule in a triplet excited state emits phosphorescence. In addition, the guest molecule in the singlet excited state crosses the triplet excited state and emits phosphorescence.

That is, as shown in the following formula (2-2A), energy is transferred from the singlet excited state (1H *) of the host molecule to the singlet excited state (1G *) of the guest molecule, and then the triplet of the guest molecule is caused by intersystem crossing. The process of generating the excited state (3G *) and the energy transfer directly from the singlet excited state (1H *) of the host molecule to the triplet excited state (3G *) of the guest molecule as shown in the following formula (2-2B) A process can be considered.

1H * + 1G → 1H + 1G * → (intersection crossing) → 1H + 3G * (2-2A)
1H * + 1G → 1H + 3G * (2-2B)

If all the energy transfer processes described in (2) above occur efficiently, both the triplet excitation energy and the singlet excitation energy of the host molecule are efficiently converted into the triplet excited state (3G *) of the guest molecule. Therefore, highly efficient light emission is possible. On the other hand, if the host molecule itself deactivates by releasing the excitation energy as light or heat before the excitation energy is transferred from the host molecule to the guest molecule, the light emission efficiency is lowered.

Next, the governing factors of the energy transfer process between the host molecule and the guest molecule described above will be described. The following two mechanisms have been proposed as the mechanism of energy transfer between molecules.

First, the Forster mechanism (dipole-dipole interaction), which is the first mechanism, does not require direct contact between molecules for energy transfer, and resonance of dipole vibration between host and guest molecules. It is a mechanism that causes energy transfer through phenomena. Due to the resonance phenomenon of dipole vibration, the host molecule transfers energy to the guest molecule, the host molecule becomes the ground state, and the guest molecule becomes the excited state. In addition, the rate constant k _{h * → g} of the Forster mechanism is shown in Formula (1).

In Equation (1), ν represents the frequency, and f ′ _h (ν) is the normalized emission spectrum of the host molecule (fluorescence spectrum, triplet excitation when discussing energy transfer from the singlet excited state). (Phosphorescence spectrum when discussing energy transfer from state) and ε _g (
ν) represents the molar extinction coefficient of the guest molecule, N represents the Avogadro number, n represents the refractive index of the medium, R represents the intermolecular distance between the host molecule and the guest molecule, and τ represents the actual measurement Represents the lifetime of the excited state (fluorescence lifetime or phosphorescence lifetime), c represents the speed of light, φ represents the emission quantum yield (fluorescence quantum yield, triplet when discussing energy transfer from the singlet excited state) (Phosphorescent quantum yield when discussing energy transfer from an excited state), and K ² is a coefficient (0 to 4) representing the orientation of the transition dipole moment of the host molecule and the guest molecule. In the case of random orientation, K ² = 2/3.

Next, in the second mechanism, Dexter mechanism (electron exchange interaction), the host molecule and guest molecule approach the effective contact distance at which orbital overlap occurs, and the excited host molecule electrons and ground state guest molecules Energy transfer occurs through the exchange of electrons. Note that the speed constant k _{h * → g} of the Dexter mechanism is shown in Equation (2).

In Equation (2), h is a Planck constant, K ′ is a constant having an energy dimension, ν represents a frequency, and f ′ _h (ν) is a normalized host molecule. Emission spectrum (fluorescence spectrum when discussing energy transfer from the singlet excited state, phosphorescence spectrum when discussing energy transfer from the triplet excited state), and ε ' _g (ν) is the normalized of the guest molecule L represents the effective molecular radius, and R represents the intermolecular distance between the host molecule and the guest molecule.

Here, the energy transfer efficiency [Phi _ET from the host molecule to the guest molecule is believed to be expressed by Equation (3). k _r is (in energy transfer from a singlet excited state fluorescence and phosphorescence if the energy transfer from a triplet excited state) emission process of the host molecule represents the rate constant, k _n, the host molecule Represents the rate constant of the non-luminescence process (thermal deactivation or intersystem crossing), and τ represents the lifetime of the excited state of the measured host molecule.

From Equation (3), in order to increase the energy transfer efficiency [Phi _ET is the rate constant of the energy transfer _{k h * → g} increased, the rate constants other competing _{k r + k n (= 1} / τ) relative It can be seen that it should be smaller.

(About energy transfer efficiency of (2-1))
First, let us consider the energy transfer process (2-1). In this case, since the Forster type (Formula (1)) is forbidden, only the Dexter type (Formula (2)) needs to be considered.
According to Equation (2), in order to increase the rate constant k _{h * → g} , the emission spectrum of the host molecule (the phosphorescence spectrum since energy transfer from the triplet excited state is discussed) and the absorption spectrum of the guest molecule (single It can be seen that the larger the overlap with the absorption corresponding to the direct transition from the term ground state to the triplet excited state) is better.

In one embodiment of the present invention, a light-emitting substance (including a phosphorescent compound and a thermally activated delayed fluorescence (TADF) material) that changes triplet excitation energy to light emission is used as a guest material. In the absorption spectrum of the phosphorescent compound, In some cases, absorption corresponding to a direct transition from a singlet ground state to a triplet excited state is observed, which is an absorption band appearing on the longest wavelength side. In particular, in a luminescent iridium complex, the absorption band on the longest wavelength side often appears as a broad absorption band in the vicinity of 500 to 600 nm (of course, depending on the emission wavelength, it appears on the shorter wavelength side or the longer wavelength side). In some cases). This absorption band mainly consists of triplet MLCT (Metal t
o Ligand Charge Transfer) transition. However, the absorption band includes a part of absorption derived from the triplet π-π * transition and the singlet MLCT transition, which overlap to form a broad absorption band on the longest wavelength side of the absorption spectrum. It is thought that there is. In other words, it is considered that the difference between the lowest singlet excited state and the lowest triplet excited state is small, and absorption derived from these overlaps to form a broad absorption band on the longest wavelength side of the absorption spectrum. Therefore, when an organometallic complex (especially an iridium complex) is used as the guest material, the broad absorption band present on the longest wavelength side and the phosphorescence spectrum of the host material greatly overlap with each other, so that the rate constant k _{h * → g} can be increased to increase energy transfer efficiency.

Further, usually, since the host material used fluorescent compound, phosphorescence lifetime (tau) is (small k r ₊ k _n) or more milliseconds and very long. This is because the transition from the triplet excited state to the ground state (singlet) is a forbidden transition. From equation (3), this is the energy transfer efficiency Φ
Works in favor of _ET .

Considering the above, the energy transfer from the triplet excited state of the host material to the triplet excited state of the guest material, that is, the process of the formula (2-1), the phosphorescence spectrum of the host material and the singlet of the guest material As long as the absorption spectrum corresponding to the direct transition from the ground state to the triplet excited state is overlapped, it generally tends to occur.

(About energy transfer efficiency of (2-2))
Next, consider the energy transfer process (2-2). The process of the formula (2-2A) is affected by the intersystem crossing efficiency of the guest material. Therefore, in order to increase the luminous efficiency to the limit, it is considered that the process of the formula (2-2B) is important. In this case, Dexter type (formula (
2)) is forbidden, so only the Förster type (Equation (1)) needs to be considered.

When Equation (1) to erase τ from equation (3), the energy transfer efficiency [Phi _ET is (since discusses energy transfer from a singlet excited state, the fluorescence quantum yield) quantum yield φ it is higher It ’s good. In practice, however, the emission spectrum of the host molecule (fluorescence spectrum since energy transfer from the singlet excited state is discussed) and the absorption spectrum of the guest molecule (directly from the singlet ground state to the triplet excited state) are more important factors. It is also necessary to have a large overlap with the absorption corresponding to the transition) (note that it is preferable that the molar extinction coefficient of the guest molecule is also high). This means that the fluorescence spectrum of the host material and the absorption band appearing on the longest wavelength side of the phosphorescent compound that is the guest material overlap.

However, this has been very difficult to achieve in the past. because,
If both the above-described processes (2-1) and (2-2) are to be performed efficiently, the above discussion shows that not only the phosphorescence spectrum of the host material but also the fluorescence spectrum has the longest wavelength of the guest material. This is because it must be designed to overlap with the side absorption band. In other words, the host material must be designed so that the fluorescence spectrum of the host material is in the same position as the phosphorescence spectrum.

However, in general, the S1 level and the T1 level are greatly different (S1 level> T1 level).
The emission wavelength of fluorescence and the emission wavelength of phosphorescence are also very different (fluorescence emission wavelength <phosphorescence emission wavelength).
For example, in a light emitting device using a phosphorescent compound,
4′-di (N-carbazolyl) biphenyl (abbreviation: CBP) has a phosphorescence spectrum around 500 nm, while the fluorescence spectrum is around 400 nm, with a gap of 100 nm. Considering this example, it is extremely difficult to design the host material so that the fluorescence spectrum of the host material is in the same position as the phosphorescence spectrum. Therefore, improvement of the energy transfer efficiency from the singlet excited state of the host material to the guest material is very important.

Accordingly, one embodiment of the present invention provides a useful technique that can overcome the problems related to the efficiency of energy transfer from a singlet excited state of a host material to a guest material. Below, the specific aspect is demonstrated.

(Embodiment 1)
In this embodiment, a concept for forming a light-emitting element which is one embodiment of the present invention and a specific structure of the light-emitting element will be described. Note that the light-emitting element which is one embodiment of the present invention is formed by sandwiching an EL layer including a light-emitting layer between a pair of electrodes (anode and cathode), and the light-emitting layer is a first element that changes triplet excitation energy into light emission. 1 luminescent substance (guest material), first organic compound having electron transporting property (host material), and second organic compound having hole transporting property (assist material) at least, and formed on the anode side First light-emitting layer, second light-emitting substance (guest material) that changes triplet excitation energy into light emission, third organic compound (host material) having electron transport property, and hole transport property It has a laminated structure with a second light emitting layer formed to contain at least the second organic compound (assist material).

Note that the first organic compound (host material) included in the first light-emitting layer has a lowest orbital level (LUMO level) than the third organic compound (host material) included in the second light-emitting layer. Is high. Accordingly, the excitation energy (E _A ) of the exciplex formed in the first light emitting layer.
Can be designed to be larger than the excitation energy (E _B ) of the exciplex formed in the second light emitting layer.

In addition, the first light-emitting substance included in the first light-emitting layer is a substance that emits light having a shorter wavelength than the second light-emitting substance included in the second light-emitting layer.

  First, an element structure of a light-emitting element which is an example of the present invention will be described with reference to FIG.

1A has a light emitting layer 10 between a pair of electrodes (anode 101 and cathode 102).
6 is sandwiched between the anode layer 101, the hole injection layer 104, the hole transport layer 105, the light emitting layer 106 (106a, 106b),
An electron transport layer 107, an electron injection layer 108, and the like are sequentially stacked.

In addition, the light-emitting layer 106 according to one embodiment of the present invention includes a first light-emitting substance (guest material) 109a that changes triplet excitation energy into light emission as illustrated in FIG. Organic compound (host material) 110 and second organic compound having hole transportability (
Assist material) 111 and at least the first light emitting layer 106a formed on the anode side
A second light-emitting substance (guest material) 109b that converts triplet excitation energy into light emission, a third organic compound (host material) 112 having an electron transporting property, and a second organic compound having a hole transporting property (Assist material) second light emitting layer 10 formed including at least 111
6b is stacked, and as the first organic compound 110 and the third organic compound 112, an electron transporting material mainly having an electron mobility of 10 ⁻⁶ cm ² / Vs or more is used. As the organic compound 111, a hole-transporting material having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher is mainly used. In this specification, the first organic compound 110 and the third organic compound 112 are referred to as host materials, and the second organic compound 1
11 is called an assist material.

The combination of the first organic compound (host material) 110 and the second organic compound (assist material) 111 in the first light-emitting layer 106a is a combination that forms an exciplex (also referred to as an exciplex). It is characterized by being. Further, the emission wavelength of the exciplex formed by the first organic compound (host material) 110 and the second organic compound (assist material) 111 is the first organic compound (host material) 110 and the second organic compound. (Assist material) Since it exists on the longer wavelength side than the respective emission wavelengths (fluorescence wavelengths) of 111, the fluorescence spectrum of the first organic compound (host material) 110 and the second organic compound (assist material) The 111 fluorescence spectrum can be converted into an emission spectrum located on the longer wavelength side.

The same applies to the second light emitting layer 106b. Therefore, the second light emitting layer 10
The combination of the third organic compound (host material) 112 and the second organic compound (assist material) 111 in 6b is a combination that forms an exciplex (also referred to as exciplex). Furthermore, the emission wavelength of the exciplex formed by the third organic compound (host material) 112 and the second organic compound (assist material) 111 is determined by the third organic compound (host material) 112 and the second organic compound. (Assist material) 1
11, the fluorescence spectrum of the third organic compound (host material) 112, and the fluorescence of the second organic compound (assist material) 111. The spectrum can be converted into an emission spectrum located on the longer wavelength side.

Note that in the above structure, the triplet excitation energy level (T1 level) of each of the first organic compound (host material) 110 and the second organic compound (assist material) 111 emits triplet excitation energy. It is preferably higher than the T1 level of the first light-emitting substance (guest material) 109a to be changed into When the T1 level of the first organic compound 110 (or the second organic compound 111) is lower than the T1 level of the first light-emitting substance (guest material) 109a, the first light-emitting substance that contributes to light emission This is because the first organic compound 110 (or the second organic compound 111) is quenched by the triplet excitation energy of the (guest material) 109a, resulting in a decrease in light emission efficiency.

Similarly, the triplet excitation energy level (T1 level) of each of the third organic compound (host material) 112 and the second organic compound (assist material) 111 changes the triplet excitation energy to light emission. It is preferably higher than the T1 level of the second light-emitting substance (guest material) 109b. If the T1 level of the third organic compound 112 (or the second organic compound 111) is lower than the T1 level of the second light-emitting substance (guest material) 109b, the second light-emitting substance that contributes to light emission (Guest material) The triplet excitation energy of 109b is changed to the third organic compound 112 (
Alternatively, the second organic compound 111) is quenched (quenched), leading to a decrease in light emission efficiency.

Further, in the first light emitting layer 106 a constituting the light emitting layer 106, the ratio of the first organic compound (host material) 110 and the second organic compound (assist material) 111 included, and the first light emitting layer 106 constituting the light emitting layer 106. The ratio of the third organic compound (host material) 112 and the second organic compound (assist material) 111 included in the light emitting layer 106b of the second light emitting layer 106b may be larger, and the present invention includes both cases. I will do it.

Note that the light-emitting layer 106 having the above structure (the first light-emitting layer 106a and the second light-emitting layer 106b).
First organic compound (host material) 110, second organic compound (assist material)
FIG. 1B shows a band diagram for explaining the energy relationship between 111 and the third organic compound (host material) 112.

In the first light-emitting layer 106a, as shown in FIG. 1 (B), the first organic compound (host material) 110 and the excitation energy _{(E A} exciplex formed by the second organic compound (assist material) 111 ) Is the HOMO level of the second organic compound (assist material) 111,
It depends on the LUMO level of the first organic compound (host material) 110. In the second light-emitting layer 106b, the excitation energy (E _B ) of the exciplex formed by the third organic compound (host material) 112 and the second organic compound (assist material) 111 is the second organic compound (host material) 112. HOMO level of compound (assist material) 111 and third organic compound (host material) 1
Determined by 12 LUMO levels. Note that the first organic compound (host material) 110 included in the first light-emitting layer 106a has a higher LUMO level than the third organic compound (host material) 112 included in the second light-emitting layer 106b. Therefore, the excitation energy (E _A ) of the exciplex formed in the first light emitting layer 106a can be designed to be larger than the excitation energy (E _B ) of the exciplex formed in the second light emitting layer 106b. I understand.

Note that with the above-described element structure, the exciplex formed by the first light-emitting layer 106a has a higher excitation energy than the exciplex formed by the second light-emitting layer 106b. The triplet excitation energy contained in the light emitting layer 106a of the first is changed to light emission.
As the light-emitting substance (guest material) 109a, a substance that emits light having a shorter wavelength than the second light-emitting substance (guest material) 109b that changes triplet excitation energy contained in the second light-emitting layer 106b into light emission is used. Thus, at the same time, the first light emitting layer 106a and the second light emitting layer 10
Light emission from 6b can be obtained. In addition, a part of the excitation energy of the exciplex formed in the first light-emitting layer 106a that could not contribute to light emission is converted into light emitted from the triplet excitation energy in the second light-emitting layer 106b. Since it can utilize as excitation energy to the luminescent substance (guest material) 109b, the light emission efficiency in a light emitting element can be improved more.

The light-emitting element described in this embodiment has a structure in which an exciplex is formed in each of the light-emitting layers 106 (the first light-emitting layer 106a and the second light-emitting layer 106b). ) Converting the fluorescence spectrum of 110, the fluorescence spectrum of the third organic compound (host material) 112, or the fluorescence spectrum of the second organic compound (assist material) 111 into an emission spectrum located on the longer wavelength side. As shown in FIG. 2, the first organic compound 110, the second organic compound 111, or the third organic compound 112 can be used.
The fluorescence spectrum of the light-emitting substance 109 (first light-emitting substance (guest material) 109a and second light-emitting substance (guest material) 109, which converts triplet excitation energy into light emission)
b) a light-emitting substance 109 (first light-emitting substance (guest material) 109a, which is located on the short wavelength side and changes triplet excitation energy into light emission, compared to the absorption band located on the longest wavelength side of b) Even if there is no overlap with the absorption band located on the longest wavelength side of the light emitting substance (guest material) 109b), it means that the overlap can be increased by forming an exciplex. Thereby, the energy transfer efficiency of the formula (2-2B) described above can be increased.

Furthermore, the exciplex is considered to have a very small difference between singlet excitation energy and triplet excitation energy. In other words, the emission spectrum from the singlet state of the exciplex and the emission spectrum from the triplet state are very close to each other. Therefore, as described above, the emission spectrum of the exciplex (generally, the emission spectrum from the singlet state of the exciplex) is the absorption band located on the longest wavelength side of the luminescent substance 109 that changes triplet excitation energy into luminescence. The emission spectrum from the triplet state of the exciplex (which is not observed at normal temperature and often not observed at low temperature) is also the longest wavelength of the luminescent substance 109 that changes the triplet excitation energy into luminescence. It will overlap the absorption band located on the side. That is, not only the energy transfer from the singlet excited state ((2-2)) but also the efficiency of the energy transfer from the triplet excited state ((2-1)) is increased, resulting in a singlet / triplet. Energy from both excited states can be efficiently converted into light emission.

Therefore, in the following, whether or not the exciplex has such characteristics was verified using molecular orbital calculation. In general, a combination of a heteroaromatic compound and an aromatic amine is a combination of the lowest unoccupied molecular orbital (LUMO) of the aromatic amine.
Compared to the Molecular Orbital level, the LUMO level of a heteroaromatic compound that is deeper (a property that electrons can easily enter) and the highest occupied orbit of the heteroaromatic compound (HOMO: High)
In many cases, an exciplex is formed due to the influence of the HOMO level (property of entering holes) of a shallow aromatic amine as compared to the est Occupied Molecular Orbital level. Thus, as a model of the first organic compound 110 (or the third organic compound 112) in one embodiment of the present invention, a typical skeleton dibenzo [f, h] quinoxaline constituting the LUMO level of a heteroaromatic compound (Abbreviation: DBq), and using a typical skeleton triphenylamine (abbreviation: TPA) constituting the HOMO level of an aromatic amine as a model of the second organic compound 111 in one embodiment of the present invention, these The calculation was performed in combination.

First, the optimal molecular structure and excitation energy in the lowest excited singlet state (S1) and lowest excited triplet state (T1) of one molecule of DBq (abbreviation) and one molecule of TPA (abbreviation) are expressed by time-dependent density functional method (TD -DFT). DBq (abbreviation) and TPA (abbreviation)
The excitation energy was also calculated for the dimer of.

The total energy of DFT (Density Functional Method) is represented by the sum of potential energy, electrostatic energy between electrons, kinetic energy of electrons, and exchange correlation energy including all complex interactions between electrons. In DFT, the exchange correlation interaction is approximated by a functional (meaning function function) of a one-electron potential expressed in electron density, so that the calculation is fast and accurate. Here, the weight of each parameter related to exchange and correlation energy is defined using B3LYP which is a mixed functional.

Moreover, 6-311 (basic function of triple split valence basis set using three shortening functions for each valence orbit) was applied to all atoms as a basis function.

For example, in the case of a hydrogen atom, the orbits of 1 s to 3 s are considered, and in the case of a carbon atom, the orbits of 1 s to 4 s and 2 p to 4 p are considered by the above-described basis functions. Furthermore, in order to improve calculation accuracy, as a polarization basis set, a p function is applied to a hydrogen atom, and d is applied to other than a hydrogen atom.
Added a function.

Note that Gaussian 09 was used as the quantum chemistry calculation program. The calculation was performed using a high performance computer (manufactured by SGI, Altix 4700).

First, DBq (abbreviation) single molecule, TPA (abbreviation) single molecule, DBq (abbreviation) and TPA (
The HOMO level and the LUMO level were calculated for the dimer of (abbreviation). HOMO level and L
FIG. 3 shows the UMO level, and FIG. 4 shows the distribution of the HOMO level and the LUMO level.

FIG. 4 (A1) shows the distribution of LUMO levels of one molecule of DBq (abbreviation), FIG. 4 (A2) shows the distribution of HOMO levels of one molecule of DBq (abbreviation), and FIG. 4 (B1) , TPA (abbreviation)
FIG. 4 (abbreviation) (B2) shows the distribution of HOMO levels of one molecule, FIG. 4 (C1) shows DBq (abbreviation) and TPA (abbreviation). The distribution of LUMO levels of the dimer of (abbreviation) is shown, and FIG. 4 (C2) shows the distribution of the HOMO levels of the dimer of DBq (abbreviation) and TPA (abbreviation).

As shown in FIG. 3, the dimer of DBq (abbreviation) and TPA (abbreviation) is the L of TPA (abbreviation).
A deep (lower) DBq (abbreviation) LUMO level (−1.99 eV) compared to the UMO level;
Compared to the HOMO level of DBq (abbreviation), the HOMO level of shallow (high) TPA (abbreviation) (-
5.21 eV), suggesting that an exciplex of DBq (abbreviation) and TPA (abbreviation) is formed. As can be seen from FIG. 4, the LUMO levels of the DBq (abbreviation) and TPA (abbreviation) dimers are distributed on the DBq (abbreviation) side, and the HOMO levels are distributed on the TPA (abbreviation) side.

Next, the excitation energy obtained from the optimal molecular structure in the S1 level and the T1 level of one molecule of DBq (abbreviation) is shown. Here, the excitation energies of the S1 level and the T1 level correspond to the wavelengths of fluorescence and phosphorescence emitted by one DBq (abbreviation) molecule, respectively. The excitation energy of the S1 level of one molecule of DBq (abbreviation) was 3.294 eV, and the fluorescence wavelength was 376.4 nm.
The excitation energy at the T1 level of one molecule of DBq (abbreviation) was 2.460 eV, and the phosphorescence wavelength was 504.1 nm.

In addition, the excitation energy obtained from the optimal molecular structure in the S1 level and the T1 level of one molecule of TPA (abbreviation) is shown. Here, the excitation energy of the S1 level and the T1 level correspond to the wavelengths of fluorescence and phosphorescence emitted by one molecule of TPA (abbreviation), respectively. The excitation energy of the S1 level of one molecule of TPA (abbreviation) was 3.508 eV, and the fluorescence wavelength was 353.4 nm.
Further, the excitation energy of the T1 level of one molecule of TPA (abbreviation) was 2.610 eV, and the phosphorescence wavelength was 474.7 nm.

Furthermore, the excitation energy obtained from the optimal molecular structure in the S1 level and T1 level of the dimer of DBq (abbreviation) and TPA (abbreviation) is shown. The excitation energy of the S1 level and the T1 level is
It corresponds to the wavelengths of fluorescence and phosphorescence emitted by the DBq (abbreviation) and TPA (abbreviation) dimers, respectively. The excitation energy of the S1 level of the dimer of DBq (abbreviation) and TPA (abbreviation) is 2.036.
eV, and the fluorescence wavelength was 609.1 nm. The excitation energy of the T1 level of the DBq (abbreviation) and TPA (abbreviation) dimer is 2.030 eV, and the phosphorescence wavelength is 61
It was 0.0 nm.

From the above, in either DBq (abbreviation) single molecule or TPA (abbreviation) single molecule,
It can be seen that the phosphorescence wavelength is shifted by a long wavelength near 100 nm. This is the CBP mentioned above
(Abbreviation) This is the same tendency as (measured value), and the result supports the validity of the calculation.

On the other hand, it can be seen that the fluorescence wavelength of the dimer of DBq (abbreviation) and TPA (abbreviation) is longer than that of one molecule of DBq (abbreviation) or one molecule of TPA (abbreviation). In addition, the difference between the fluorescence wavelength and phosphorescence wavelength of the dimer of DBq (abbreviation) and TPA (abbreviation) is only 0.9n.
m, and it can be seen that the wavelengths are substantially the same.

From this result, it can be said that the singlet excitation energy and the triplet excitation energy of the exciplex are substantially the same energy. Thus, as mentioned above, the exciplex is in its singlet state,
From both the triplet state and the triplet state, it was suggested that energy can be efficiently transferred to the light-emitting substance (the guest material including the first light-emitting substance and the second light-emitting substance described above) that changes the triplet excitation energy to light emission. .

As described above, the light-emitting element of one embodiment of the present invention includes a light-emitting substance that converts the emission spectrum and triplet excitation energy of the exciplex formed in the light-emitting layer into light emission (the first light-emitting substance and the second light-emitting substance described above). Utilizing the overlap with the absorption spectrum of the guest material containing a luminescent substance)
Energy transfer efficiency is high because of energy transfer. Therefore, a light emitting element with high external quantum efficiency can be realized.

In addition, since the exciplex exists only in an excited state, there is no ground state capable of absorbing energy. Therefore, a luminescent substance (guest material) that converts triplet excitation energy into light emission
Phenomenon in which a light-emitting substance (guest material) that changes triplet excitation energy into light emission by energy transfer from the singlet excited state and triplet excited state to the exciplex is deactivated before light emission (ie, the light emission efficiency is impaired). Is not considered to occur in principle. This is also a factor that can increase the external quantum efficiency.

Note that the above-described exciplex is formed by interaction between different types of molecules in an excited state. Further, it is generally known that an exciplex is easily formed between a material having a relatively deep LUMO level and a material having a shallow HOMO level.

The emission wavelength of the exciplex depends on the energy difference between the HOMO level and the LUMO level. As a general tendency, the emission wavelength is shortened when the energy difference is large, and the emission wavelength is lengthened when the energy difference is small.

Therefore, the HOMO levels and LUMO levels of the first organic compound (host material) 110, the second organic compound (assist material) 111, and the third organic compound (host material) 112 in this embodiment are shown in FIG. As shown in FIG. Specifically, the HOMO level of the first organic compound 110 and the HOMO level of the third organic compound 112 <the HOMO level of the second organic compound 111 <the LUMO level of the third organic compound 112 <the first. The energy levels differ in the order of the LUMO level of the first organic compound 110 <the LUMO level of the second organic compound 111.

In each light-emitting layer, two organic compounds (the first organic compound 110 and the second organic compound 111 in the first light-emitting layer 106a, and the third organic compound 112 in the second light-emitting layer 106b) are used. When the exciplex is formed by the second organic compound 111), the HOMO level of the exciplex in the first light-emitting layer 106a and the second light-emitting layer 106b is the same as that of the second organic compound (assist material) 111. The LUMO level of the exciplex in the first light-emitting layer 106a is derived from the first organic compound (host material) 110, and the second light-emitting layer 1
The LUMO level of the exciplex in 06b is L of the third organic compound (host material) 112.
Derived from the UMO level. Therefore, the excitation energy (E _A ) of the exciplex in the first light-emitting layer 106a is larger than the excitation energy (E _B ) of the exciplex in the second light-emitting layer 106b. That is, as the first light-emitting substance 109a that converts triplet excitation energy contained in the first light-emitting layer into light emission, the second light-emitting substance 109b that changes triplet excitation energy contained in the second light-emitting layer into light emission. By using a substance that emits light having a shorter wavelength than that, a light-emitting element with high emission efficiency can be formed. In addition, luminescent materials having different emission wavelengths can be efficiently emitted at the same time.

Note that the following two processes are conceivable as the formation process of the exciplex in one embodiment of the present invention.

The first formation process is a formation process in which an exciplex is formed from a state in which the second organic compound (assist material) has a carrier (specifically, a cation).

In general, when electrons and holes are recombined in the host material, excitation energy is transferred from the excited host material to the guest material, the guest material reaches the excited state, and emits light. Before the excitation energy moves to the guest material, the host material itself emits light, or the excitation energy becomes thermal energy, so that a part of the excitation energy is deactivated. In particular, when the host material is in a singlet excited state, energy transfer hardly occurs as described in (2-2). Such deactivation of excitation energy is one of the factors that lead to a reduction in the lifetime of the light emitting element.

However, in one embodiment of the present invention, the first organic compound (or the third organic compound) (
First organic compound (or third organic compound) (host material) for forming an exciplex from a state in which the host material) and the second organic compound (assist material) have carriers (cation or anion) Formation of singlet excitons can be suppressed. That is, there can be a process of directly forming an exciplex without forming singlet excitons. Thereby, the deactivation of the singlet excitation energy can also be suppressed. Therefore, a light-emitting element with a long lifetime can be realized.

For example, the first organic compound (or the third organic compound) is an electron-trapping compound having a property of easily capturing electrons (carriers) among electron transporting materials (deep LUMO level), In the case where the organic compound 2 is a hole trapping compound having a property of easily capturing holes (carriers) among the hole transporting materials (shallow HOMO level), the first organic compound (or A direct exciplex is formed from the anion of the third organic compound) and the cation of the second organic compound. The exciplex formed in such a process is particularly referred to as an electroplex. In this way, the first organic compound (or the third organic compound) (host material) suppresses the generation of a singlet excited state and changes the triplet excitation energy from the electroplex to light emission (guest material). Thus, a light emitting element with high luminous efficiency can be obtained. In this case, generation of a triplet excited state of the first organic compound (or third organic compound) (host material) is similarly suppressed, and a direct exciplex is formed. It is considered that energy is transferred to a luminescent substance (guest material) that changes energy into light emission.

In the second formation process, after the first organic compound (host material), the second organic compound (assist material), or the third organic compound (host material) forms singlet excitons. It is an elementary process that interacts with the other ground state to form an exciplex. Unlike the electroplex, in this case, the first organic compound (host material), the second organic compound (
Assist material) or a third organic compound (host material) singlet excited state is generated, but this is quickly converted to an exciplex, thus also suppressing the deactivation of singlet excitation energy. Can do. Accordingly, it is possible to suppress the excitation energy of the first organic compound (host material), the second organic compound (assist material), or the third organic compound (host material) from being deactivated. In this case, it is considered that the triplet excited state of the host material is also quickly converted into an exciplex, and energy is transferred from the exciplex to a luminescent substance (guest material) that changes triplet excitation energy into light emission.

Note that the first organic compound (or third organic compound) (host material) is an electron trapping compound, while the second organic compound (assist material) is a hole trapping compound, and these compounds When the difference between the HOMO levels and the LUMO levels of the two is large (specifically, the difference is 0.3 eV or more), the electrons are selectively used in the first organic compound (or the third organic compound) (host material). ) And the holes selectively enter the second organic compound (assist material).
In this case, it is considered that the process of forming an electroplex is given priority over the process of forming an exciplex via singlet excitons.

A luminescent substance that changes the emission spectrum and triplet excitation energy of the exciplex into luminescence (
In order to sufficiently overlap the absorption spectrum of the guest material), the difference between the energy value of the peak of the emission spectrum and the energy value of the peak of the absorption band on the lowest energy side of the absorption spectrum should be within 0.3 eV. preferable. More preferably, it is within 0.2 eV, and most preferably is within 0.1 eV.

In the light-emitting element of one embodiment of the present invention, the excitation energy of the exciplex is sufficiently transferred to a light-emitting substance (guest material) that changes triplet excitation energy to light emission, and light emission from the exciplex is substantially reduced. Preferably it is not observed. Therefore, it is preferable that the luminescent substance that changes the triplet excitation energy to luminescence by transferring the energy to the luminescent substance that changes the triplet excitation energy to luminescence through the exciplex emits light. Note that the light-emitting substance that converts triplet excitation energy into light emission is preferably a phosphorescent compound (such as an organometallic complex) or a thermally activated delayed fluorescence (TADF) material.

In the first light-emitting layer 106a of the light-emitting element which is one embodiment of the present invention, triplet excitation is generated in the first organic compound (the third organic compound in the case of the second light-emitting layer 106b) (host material). When a light-emitting substance that changes energy into light emission is used, the first organic compound (second light-emitting layer 10) is used.
In the case of 6b, the third organic compound) (host material) itself easily emits light, and it is difficult for energy to be transferred to the light-emitting substance (guest material) that changes triplet excitation energy into light emission.
In this case, the first organic compound (the third organic compound in the case of the second light-emitting layer 106b) only needs to emit light efficiently, but the host material has a problem of concentration quenching. It is difficult to achieve. Therefore, at least one of the first organic compound (third organic compound in the case of the second light-emitting layer 106b) (host material) and the second organic compound (assist material) is a fluorescent compound (that is, a singlet). It is effective if the compound is a compound that easily emits light or deactivates heat from an excited state. Therefore, at least one of the first organic compound (the third organic compound in the case of the second light-emitting layer 106b) (host material) and the second organic compound (assist material) is a fluorescent compound, and the exciplex Is preferably used for an energy transfer medium.

Note that the structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

(Embodiment 2)
In this embodiment, an example of a light-emitting element which is one embodiment of the present invention will be described with reference to FIGS.

The light-emitting element described in this embodiment includes a pair of electrodes (first electrode (anode) 2) as illustrated in FIG.
01 and the second electrode (cathode) 202), an EL layer 203 including a light emitting layer 206 is sandwiched between the EL layer 203 and the EL layer 203. The EL layer 203 has a stacked structure of a first light emitting layer 206a and a second light emitting layer 206b. In addition to the light-emitting layer 206, the hole (or hole) injection layer 204, the hole (or hole) transport layer 205, the electron transport layer 207, the electron injection layer 208, and the like are formed.

Note that the light-emitting layer 206 described in this embodiment includes the first light-emitting layer 206a and the second light-emitting layer 20.
In the light-emitting layer 206, the first light-emitting layer 206a includes a first light-emitting substance (guest material) 209a that changes triplet excitation energy into light emission, and a first light-emitting layer 206a having an electron transporting property. 1 organic compound (host material) 210 and a second organic compound (assist material) 211 having a hole transporting property, and the second light emitting layer 206b changes triplet excitation energy into light emission. Second light-emitting substance (guest material) 209b, third organic compound (host material) 212 having an electron transporting property, and second organic compound having a hole transporting property (host material)
Assist material) 211 is included.

Note that the first organic compound (host material) included in the first light-emitting layer has a lowest orbital level (LUMO level) than the third organic compound (host material) included in the second light-emitting layer. Is high. Accordingly, the excitation energy (E _A ) of the exciplex formed in the first light emitting layer.
Can be designed to be larger than the excitation energy (E _B ) of the exciplex formed in the second light emitting layer.

Note that in the light-emitting layer 206 (the first light-emitting layer 206a and the second light-emitting layer 206b),
In the case of the first light-emitting layer 206 a, the first light-emitting substance 209 a that changes triplet excitation energy into light emission is included in the first organic compound (host material) 210 and the second organic compound (assist material) 211. In the case of the second light-emitting layer 206b, the second light-emitting substance 209b that changes triplet excitation energy to light emission is dispersed into the third organic compound (host material) 212 and the second organic compound (assist material). ) 211 is dispersed in the light emitting layer 20.
6 (first light emitting layer 206a and second light emitting layer 206b) can be suppressed from being crystallized. Further, concentration quenching due to a high concentration of the light-emitting substance 209 (209a, 209b) can be suppressed, and the light emission efficiency of the light-emitting element can be increased.

In addition, the first organic compound 210, the second organic compound 211, and the third organic compound 2
Each of the twelve triplet excitation energy levels (T1 level) is preferably higher than the T1 level of the light-emitting substance 209 (209a, 209b) that changes the triplet excitation energy into light emission. First organic compound 210, second organic compound 211, and third organic compound 21
The T1 level of 2 emits a luminescent substance 209 (209a, 20) that changes triplet excitation energy into light emission.
When lower than the T1 level of 9b), the triplet excitation energy of the luminescent substance 209 (209a, 209b) that changes the triplet excitation energy contributing to light emission to light emission is changed to the first organic compound 21.
This is because 0 (or the second organic compound 211 or the third organic compound 212) is quenched (quenched), leading to a decrease in light emission efficiency.

In this embodiment mode, in the light emitting layer 206, the first light emitting layer 206a has the first organic compound 210 in recombination of carriers (electrons and holes) injected from both electrodes.
An exciplex is formed from the second organic compound 211, and an exciplex is formed from the third organic compound 212 and the second organic compound 211 in the second light-emitting layer 206b. Accordingly, the fluorescence spectrum of the first organic compound 210 and the fluorescence spectrum of the second organic compound 211 in the first light-emitting layer 206a can be converted into the emission spectrum of the exciplex located on the longer wavelength side. , The fluorescence spectrum of the third organic compound 212 and the fluorescence spectrum of the second organic compound 211 in the second light-emitting layer 206b are:
It can convert into the emission spectrum of the exciplex located in the longer wavelength side. Therefore, in order to maximize the energy transfer from the singlet excited state, the overlap between the emission spectrum of the exciplex and the absorption spectrum of the luminescent substance (guest material) 209 that changes the triplet excitation energy into light emission is increased. The first organic compound 210 and the second organic compound 211 are selected in the first light emitting layer 206a, and the third organic compound 212 and the second organic compound 211 are selected in the second light emitting layer 206b, respectively. And That is, here, even in the triplet excited state, it is considered that energy transfer occurs not from the host material but from the exciplex.

Note that a light-emitting substance 209 that converts triplet excitation energy into light emission (first light-emitting substance 20
9a and the second light-emitting substance 209b) are preferably a phosphorescent compound (such as an organometallic complex) or a thermally activated delayed fluorescence (TADF) material. Further, as the first organic compound (host material) 210 and the third organic compound (host material) 212, it is preferable to use an electron transporting material. In addition, as the second organic compound (assist material) 211,
It is preferable to use a hole transporting material.

Note that examples of the organometallic complex include bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) tetrakis (1-pyrazolyl) borate (abbreviation: FIr6), Bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) picolinate (abbreviation: FIrpic), bis [2-
(3 ′, 5′-bistrifluoromethylphenyl) pyridinato-N, C ^{2 ′} ] iridium (III) picolinate (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), bis [2- (4
', 6'-difluorophenyl) pyridinato-N, C2 ^' ] iridium (III) acetylacetonate (abbreviation: FIracac), tris (2-phenylpyridinato) iridium (III) (abbreviation: Ir (ppy) ₃ ), Bis (2-phenylpyridinato) iridium (III) acetylacetonate (abbreviation: Ir (ppy) ₂ (acac)), bis (benzo [h] quinolinato) iridium (III) acetylacetonate (abbreviation: Ir (Bzq
) ₂ (acac)), bis (2,4-diphenyl-1,3-oxazolate-N, C ^{2 ′} )
Iridium (III) acetylacetonate (abbreviation: Ir (dpo) ₂ (acac)),
Bis {2- [4 ′-(perfluorophenyl) phenyl] pyridinato-N, C ^{2 ′} } Iridium (III) acetylacetonate (abbreviation: Ir (p-PF-ph) ₂ (acac)
), Bis (2-phenylbenzothiazolate-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (bt) ₂ (acac)), bis [2- (2′-benzo [4,
5-α] thienyl) pyridinato-N, C ^{3 ′} ] iridium (III) acetylacetonate (abbreviation: Ir (btp) ₂ (acac)), bis (1-phenylisoquinolinato-N,
C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (piq) ₂ (aca
c)), (acetylacetonato) bis [2,3-bis (4-fluorophenyl) quinoxalinato] iridium (III) (abbreviation: Ir (Fdpq) ₂ (acac)), (acetylacetonato) bis (2, 3,5-triphenylpyrazinato) iridium (III) (abbreviation: Ir (tppr) ₂ (acac)), 2,3,7,8,12,13,17,18-octaethyl-21H, 23H-porphyrin Platinum (II) (abbreviation: PtOEP), Tris (
Acetylacetonato) (monophenanthroline) terbium (III) (abbreviation: Tb (a
cac) ₃ (Phen)), tris (1,3-diphenyl-1,3-propanedionate)
(Monophenanthroline) europium (III) (abbreviation: Eu (DBM) ₃ (Phen
)), Tris [1- (2-thenoyl) -3,3,3-trifluoroacetonato] (monophenanthroline) europium (III) (abbreviation: Eu (TTA) ₃ (Phen)) and the like.

The electron transporting material is preferably a π-deficient heteroaromatic compound such as a nitrogen-containing heteroaromatic compound. For example, 2- [3- (dibenzothiophen-4-yl) phenyl] dibenzo [f, h] Quinoxaline (abbreviation: 2mDBTPDBq-II), 2- [3′-
(Dibenzothiophen-4-yl) biphenyl-3-yl] dibenzo [f, h] quinoxaline (abbreviation: 2mDBTBPDBq-II), 2- [4- (3,6-diphenyl-9H-
Carbazol-9-yl) phenyl] dibenzo [f, h] quinoxaline (abbreviation: 2CzP
DBq-III), 7- [3- (Dibenzothiophen-4-yl) phenyl] dibenzo [
f, h] quinoxaline (abbreviation: 7mDBTPDBq-II) and 6- [3- (dibenzothiophen-4-yl) phenyl] dibenzo [f, h] quinoxaline (abbreviation: 6mDB)
And quinoxaline or dibenzoquinoxaline derivatives such as TPDBq-II).

Further, as the hole transporting material, a π-excess type heteroaromatic compound (for example, a carbazole derivative or an indole derivative) or an aromatic amine compound is preferable.
Phenyl-4 ′-(9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation: PCBA1BP), 4,4′-di (1-naphthyl) -4 ″-(9-phenyl-
9H-carbazol-3-yl) triphenylamine (abbreviation: PCBNBB), 3- [N
-(1-naphthyl) -N- (9-phenylcarbazol-3-yl) amino] -9-phenylcarbazole (abbreviation: PCzPCN1), 4,4 ′, 4 ″ -tris [N- (1-naphthyl) -N-phenylamino] triphenylamine (abbreviation: 1'-TNATA), 2,
7-bis [N- (4-diphenylaminophenyl) -N-phenylamino] -spiro-9
, 9′-bifluorene (abbreviation: DPA2SF), N, N′-bis (9-phenylcarbazol-3-yl) -N, N′-diphenylbenzene-1,3-diamine (abbreviation: PCA2)
B), N- (9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)
Diphenylamine (abbreviation: DPNF), N, N ′, N ″ -triphenyl-N, N ′, N
'' -Tris (9-phenylcarbazol-3-yl) benzene-1,3,5-triamine (abbreviation: PCA3B), 2- [N- (9-phenylcarbazol-3-yl) -N-phenylamino] Spiro-9,9′-bifluorene (abbreviation: PCASF), 2- [N- (4
-Diphenylaminophenyl) -N-phenylamino] spiro-9,9'-bifluorene (abbreviation: DPASF), N, N'-bis [4- (carbazol-9-yl) phenyl]-
N, N′-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA)
2F), 4,4′-bis [N- (3-methylphenyl) -N-phenylamino] biphenyl (abbreviation: TPD), 4,4′-bis [N- (4-diphenylaminophenyl) -N— Phenylamino] biphenyl (abbreviation: DPAB), N- (9,9-dimethyl-9H-fluoren-2-yl) -N- {9,9-dimethyl-2- [N′-phenyl-N ′-(9 , 9-
Dimethyl-9H-fluoren-2-yl) amino] -9H-fluoren-7-yl} phenylamine (abbreviation: DFALDFL), 3- [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA1), 3
-[N- (4-diphenylaminophenyl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-bis [N- (4-diphenylaminophenyl) -N-phenylamino]- 9-phenylcarbazole (abbreviation: PCzDPA2), 4
, 4′-bis (N- {4- [N ′-(3-methylphenyl) -N′-phenylamino] phenyl} -N-phenylamino) biphenyl (abbreviation: DNTPD), 3,6-bis [N −
(4-diphenylaminophenyl) -N- (1-naphthyl) amino] -9-phenylcarbazole (abbreviation: PCzTPN2), 3,6-bis [N- (9-phenylcarbazole-
3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2
).

However, a light-emitting substance (guest material) 209 that changes the above-described triplet excitation energy into light emission.
(First luminescent substance 209a, second luminescent substance 209b), first organic compound (host material) 210, second organic compound (assist material) 211, and third organic compound (host material) The materials that can be used for each of 212 are not limited to these,
This is a combination capable of forming an exciplex, and the emission spectrum of the exciplex is that of a luminescent substance (guest material) 209 (first luminescent substance 209a or second luminescent substance 209b) that changes triplet excitation energy into luminescence. The peak of the emission spectrum of the exciplex overlaps with the absorption spectrum, and the luminescent substance (guest material) 209 (first material) that changes the triplet excitation energy into luminescence.
The light emitting material 209a or the second light emitting material 209b) may have any wavelength longer than the peak of the absorption spectrum.

When an electron transporting material is used for the first organic compound 210 and a hole transporting material is used for the second organic compound 211, the carrier balance can be controlled by the mixing ratio. Specifically, first organic compound 210: second organic compound 211 = 1: 9
A range of ˜9: 1 is preferred.

  Specific examples for manufacturing the light-emitting element described in this embodiment will be described below.

For the first electrode (anode) 201 and the second electrode (cathode) 202, a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like can be used. Specifically, indium tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide, indium zinc oxide (Indium Zi).
nc Oxide), indium oxide containing tungsten oxide and zinc oxide, gold (A
u), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), titanium ( In addition to Ti, elements belonging to Group 1 or Group 2 of the periodic table of elements, that is, lithium (L
i) alkali metals such as cesium (Cs), magnesium (Mg), calcium (
Ca), alkaline earth metals such as strontium (Sr), and alloys containing them (Mg
Rare earth metals such as Ag, AlLi), europium (Eu), ytterbium (Yb), alloys containing these, and other graphene can be used. Note that the first electrode (anode) 201 and the second electrode (cathode) 202 can be formed by, for example, a sputtering method, an evaporation method (including a vacuum evaporation method), or the like.

As a substance having a high hole-transport property used for the hole-injection layer 204 and the hole-transport layer 205, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB) Or α-NPD), N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD), 4,4 ',
4 ″ -tris (carbazol-9-yl) triphenylamine (abbreviation: TCTA), 4
, 4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TD)
ATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis [N- (spiro-9) ,
9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB)
Aromatic amine compounds such as 3- [N- (9-phenylcarbazol-3-yl) -N-
Phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3 -[N- (1-naphthyl) -N- (9-phenylcarbazol-3-yl) amino] -9-phenylcarbazole (abbreviation: PCzPC
N1) and the like. In addition, 4,4′-di (N-carbazolyl) biphenyl (abbreviation:
CBP), 1,3,5-tris [4- (N-carbazolyl) phenyl] benzene (abbreviation:
TCPB), carbazole derivatives such as 9- [4- (10-phenyl-9-anthracenyl) phenyl] -9H-carbazole (abbreviation: CzPA), and the like can be used. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used.

Further, poly (N-vinylcarbazole) (abbreviation: PVK), poly (4-vinyltriphenylamine) (abbreviation: PVTPA), poly [N- (4- {N ′-[4- (4-diphenylamino)] Phenyl] phenyl-N′-phenylamino} phenyl) methacrylamide]
A high molecular compound such as (abbreviation: PTPDMA) or poly [N, N′-bis (4-butylphenyl) -N, N′-bis (phenyl) benzidine] (abbreviation: Poly-TPD) can also be used.

Examples of the acceptor substance that can be used for the hole-injection layer 204 include transition metal oxides and oxides of metals belonging to Groups 4 to 8 in the periodic table. Specifically, molybdenum oxide is particularly preferable.

The light emitting layer 206 (206a, 206b) is as described above, and the first light emitting layer 206a.
Includes at least a first light-emitting substance 209a, a first organic compound (host material) 210, and a second organic compound (assist material) 211, and the second light-emitting layer 206b has a second light-emitting property. A substance 209 b, a third organic compound (host material) 212, and a second organic compound (assist material) 211 are formed at least.

The electron transport layer 207 is a layer containing a substance having a high electron transport property. The electron transport layer 207 includes
Alq ₃ , tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ )
, Bis (10-hydroxybenzo [h] quinolinato) beryllium (abbreviation: BeBq _2),
Metal complexes such as BAlq, Zn (BOX) ₂ , and bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) ₂ ) can be used. Also, 2- (
4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (p-tert-butylphenyl) -1,
3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-te
rt-butylphenyl) -4-phenyl-5- (4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2,4-triazole (abbreviation: p-EtT)
AZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP)
), 4,4′-bis (5-methylbenzoxazol-2-yl) stilbene (abbreviation: B)
Heteroaromatic compounds such as zOs) can also be used. In addition, poly (2,5-pyridinediyl) (abbreviation: PPy), poly [(9,9-dihexylfluorene-2,7-diyl)
-Co- (pyridine-3,5-diyl)] (abbreviation: PF-Py), poly [(9,9-dioctylfluorene-2,7-diyl) -co- (2,2'-bipyridine-6, 6'-diyl)] (abbreviation: PF-BPy) can also be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that any substance other than the above substances may be used for the electron-transport layer 207 as long as it has a property of transporting more electrons than holes.

Further, the electron-transport layer 207 is not limited to a single layer, and two or more layers including the above substances may be stacked.

The electron injection layer 208 is a layer containing a substance having a high electron injection property. The electron injection layer 208 includes
Lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ )
Alkali metals such as lithium oxide (LiOx), alkaline earth metals, or compounds thereof can be used. Alternatively, a rare earth metal compound such as erbium fluoride (ErF ₃ ) can be used. In addition, a substance constituting the electron transport layer 207 described above can be used.

Alternatively, a composite material obtained by mixing an organic compound and an electron donor (donor) may be used for the electron injection layer 208. Such a composite material is excellent in electron injecting property and electron transporting property because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material excellent in transporting the generated electrons. Specifically, for example, a substance (metal complex, heteroaromatic compound, etc.) constituting the electron transport layer 207 described above is used. Can be used. The electron donor may be any substance that exhibits an electron donating property to the organic compound. Specifically, alkali metals, alkaline earth metals, and rare earth metals are preferable, and lithium, cesium, magnesium, calcium, erbium, ytterbium, and the like can be given. Alkali metal oxides and alkaline earth metal oxides are preferable, and lithium oxide, calcium oxide, barium oxide, and the like can be given. A Lewis base such as magnesium oxide can also be used. Alternatively, an organic compound such as tetrathiafulvalene (abbreviation: TTF) can be used.

Note that the hole injection layer 204, the hole transport layer 205, and the light emitting layer 206 (206a, 20) described above are used.
6b), the electron transport layer 207, and the electron injection layer 208 can each be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), an ink jet method, or a coating method.

Light emission obtained from the light-emitting layer 206 of the light-emitting element described above is extracted outside through one or both of the first electrode 201 and the second electrode 202. Therefore, one or both of the first electrode 201 and the second electrode 202 in this embodiment is a light-transmitting electrode.

The light-emitting element described in this embodiment increases energy transfer efficiency by energy transfer using an overlap between an emission spectrum of an exciplex and an absorption spectrum of a light-emitting substance (guest material) that changes triplet excitation energy into light emission. Therefore, a light-emitting element with high external quantum efficiency can be realized.

Note that the light-emitting element described in this embodiment is one embodiment of the present invention and is particularly characterized by the structure of the light-emitting layer. Therefore, by applying the structure described in this embodiment mode, a passive matrix light-emitting device, an active matrix light-emitting device, or the like can be manufactured, which are all included in the present invention. .

Note that there is no particular limitation on the structure of the TFT in the case of manufacturing the active matrix light-emitting device. For example, a staggered or inverted staggered TFT can be used as appropriate. T
The driving circuit formed on the FT substrate may be composed of N-type and P-type TFTs, or may be composed of only one of N-type TFTs and P-type TFTs. Further, the crystallinity of a semiconductor film used for the TFT is not particularly limited. For example, an amorphous semiconductor film, a crystalline semiconductor film, an oxide semiconductor film, or the like can be used.

Note that the structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

(Embodiment 3)
In this embodiment, as one embodiment of the present invention, a light-emitting element having a plurality of EL layers with a charge generation layer interposed therebetween (hereinafter referred to as a tandem light-emitting element) will be described.

The light-emitting element described in this embodiment includes a pair of electrodes (a first electrode 30 as illustrated in FIG. 6A).
1 and the second electrode 304), a plurality of EL layers (a first EL layer 302 (1), a second E
A tandem light-emitting element including the L layer 302 (2)).

In this embodiment, the first electrode 301 is an electrode that functions as an anode, and the second electrode 304 is an electrode that functions as a cathode. Note that the first electrode 301 and the second electrode 304 can have a structure similar to that in Embodiment 1. In addition, a plurality of EL layers (first
The EL layer 302 (1) and the second EL layer 302 (2) may have a structure similar to that of the EL layer described in Embodiment 1 or 2, but one of them is similar. It may be a configuration. That is, the first EL layer 302 (1) and the second EL layer 302 (2) may have the same structure or different structures, and the structure is different from that in Embodiment Mode 1 or Embodiment Mode 2. Similar ones can be applied.

In addition, a charge generation layer (I) 305 is provided between the plurality of EL layers (the first EL layer 302 (1) and the second EL layer 302 (2)). The charge generation layer (I) 305 has a function of injecting electrons into one EL layer and injecting holes into the other EL layer when a voltage is applied to the first electrode 301 and the second electrode 304. Have. In the case of this embodiment mode, when a voltage is applied to the first electrode 301 so that the potential is higher than that of the second electrode 304, the charge generation layer (I) 30
5, electrons are injected into the first EL layer 302 (1), and holes are injected into the second EL layer 302 (2).

Note that the charge generation layer (I) 305 has a light-transmitting property with respect to visible light in terms of light extraction efficiency (specifically, the visible light transmittance with respect to the charge generation layer (I) 305 is 40% or more). The charge generation layer (I) 305 includes the first electrode 301 and the second electrode 3.
Even a conductivity lower than 04 works.

Even when the charge generation layer (I) 305 has a structure in which an electron acceptor is added to an organic compound having a high hole-transport property, an electron donor (donor) is added to the organic compound having a high electron-transport property. It may be a configured. Moreover, both these structures may be laminated | stacked.

In the case where an electron acceptor is added to an organic compound having a high hole transporting property, examples of the organic compound having a high hole transporting property include NPB, TPD, TDATA, and MTDATA.
An aromatic amine compound such as 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB) can be used. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than the above substances, any organic compound that has a property of transporting more holes than electrons may be used.

Examples of the electron acceptor include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, and the like.
Moreover, a transition metal oxide can be mentioned. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be given. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are preferable because of their high electron accepting properties. Among these, molybdenum oxide is especially preferable because it is stable in the air, has a low hygroscopic property, and is easy to handle.

On the other hand, in the case where an electron donor is added to an organic compound having a high electron transporting property, examples of the organic compound having a high electron transporting property include Alq, Almq ₃ , BeBq ₂ , B
A metal complex having a quinoline skeleton or a benzoquinoline skeleton such as Alq can be used. In addition, a metal complex having an oxazole-based or thiazole-based ligand such as Zn (BOX) ₂ or Zn (BTZ) ₂ can also be used. In addition to metal complexes, PBD, OXD-7, TAZ, BPhen, BCP, and the like can also be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than the above substances, any organic compound that has a property of transporting more electrons than holes may be used.

As the electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, a metal belonging to Group 13 of the periodic table, or an oxide or carbonate thereof can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, or the like is preferably used. An organic compound such as tetrathianaphthacene may be used as an electron donor.

Note that by forming the charge generation layer (I) 305 using the above-described material, an increase in driving voltage in the case where an EL layer is stacked can be suppressed.

In this embodiment mode, a light-emitting element having two EL layers is described; however, as shown in FIG. 6B, a light-emitting element in which an EL layer of n layers (where n is 3 or more) is stacked is also used. Can be applied as well. In the case where a plurality of EL layers are provided between a pair of electrodes as in the light-emitting element according to this embodiment, by disposing the charge generation layer (I) between the EL layers and the EL layers,
Light emission in a high luminance region is possible with the current density kept low. Since the current density can be kept low, a long-life element can be realized. Further, when illumination is used as an application example, the voltage drop due to the resistance of the electrode material can be reduced, so that uniform light emission over a large area is possible. Further, a light-emitting device that can be driven at a low voltage and consumes low power can be realized.

Further, by making the light emission colors of the respective EL layers different, light emission of a desired color can be obtained as the whole light emitting element. For example, in a light-emitting element having two EL layers, a light-emitting element that emits white light as a whole of the light-emitting element by making the emission color of the first EL layer and the emission color of the second EL layer have a complementary relationship It is also possible to obtain The complementary color refers to a relationship between colors that become achromatic when mixed. In other words, white light emission can be obtained when mixed with light obtained from a substance that emits a complementary color.

The same applies to a light-emitting element having three EL layers. For example, the emission color of the first EL layer is red, the emission color of the second EL layer is green, and the third EL layer. When the emission color of is blue, the entire light emitting element can emit white light.

Note that the structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

(Embodiment 4)
In this embodiment, a light-emitting device which is one embodiment of the present invention will be described.

The light-emitting device described in this embodiment has a minute optical resonator (microcavity) structure using a light resonance effect between a pair of electrodes, and a pair of electrodes (reflection) as illustrated in FIG. Electrode 4
01 and a semi-transmissive / semi-reflective electrode 402), a plurality of light-emitting elements having a structure having at least an EL layer 405 are provided. The EL layer 405 includes at least the light emitting layer 4 that serves as a light emitting region.
04 (404R, 404G, 404B), and in addition, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer (E), and the like may be included. The light emitting layer 404
(404R, 404G, 404B) can include the structure of the light-emitting layer which is one embodiment of the present invention as described in Embodiments 1 and 2.

In this embodiment mode, as shown in FIG. 7, light-emitting elements having different structures (first light-emitting elements (R) 4)
A light-emitting device including 10R, the second light-emitting element (G) 410G, and the third light-emitting element (B) 410B) will be described.

The first light emitting element (R) 410R includes a first transparent conductive layer 403a on the reflective electrode 401,
First light emitting layer (B) 404B, second light emitting layer (G) 404G, third light emitting layer (R) 404
It has a structure in which an EL layer 405 partially containing R and a semi-transmissive / semi-reflective electrode 402 are sequentially laminated. In addition, the second light emitting element (G) 410G has the second transparent conductive layer 4 on the reflective electrode 401.
03b, an EL layer 405, and a semi-transmissive / semi-reflective electrode 402 are sequentially stacked. The third light-emitting element (B) 410B has a structure in which an EL layer 405 and a semi-transmissive / semi-reflective electrode 402 are sequentially stacked on the reflective electrode 401.

Note that the light emitting elements (first light emitting element (R) 410R, second light emitting element (G) 410G).
In the third light emitting element (B) 410B), the reflective electrode 401, the EL layer 405, the semi-transmissive
The semi-reflective electrode 402 is common. The first light emitting layer (B) 404B emits light (λ _B ) having a peak in a wavelength region of 420 nm or more and 480 nm or less, and the second light emitting layer (G).
404G emits light (λ _G ) having a peak in a wavelength region of 500 nm to 550 nm, and the third light emitting layer (R) 404R has light (λ _R ) having a peak in a wavelength region of 600 nm to 760 nm. To emit light. Accordingly, in any of the light emitting elements (the first light emitting element (R) 410R, the second light emitting element (G) 410G, and the third light emitting element (B) 410B), the first light emitting layer (B) 404B, The second light emitting layer (G) 404G and the third light emitting layer (R
) The light emitted from 404R is superimposed, that is, broad light over the visible light region can be emitted. From the above, it is assumed that the wavelength length has a relationship of λ _B <λ _G <λ _R.

Each light-emitting element described in this embodiment includes a reflective electrode 401 and a semi-transmissive / semi-reflective electrode 40.
The EL layer 405 is sandwiched between the EL layer 405 and the light emitted from each light emitting layer included in the EL layer 405 in all directions functions as a micro optical resonator (microcavity). Is resonated by the reflective electrode 401 and the semi-transmissive / semi-reflective electrode 402. Note that the reflective electrode 401 is formed of a conductive material having reflectivity, and has a visible light reflectance of 40% to 100%, preferably 70% to 100%, and a resistivity of 1 ×. 10
It is assumed that the film is ⁻² Ωcm or less. The semi-transmissive / semi-reflective electrode 402 is formed of a conductive material having reflectivity and a conductive material having light transmittance, and the reflectance of visible light to the film is 20% to 80%, preferably 40. % To 70%, and the resistivity is 1 × 10 ⁻
It is assumed that the film is ² Ωcm or less.

In this embodiment mode, each light-emitting element includes a transparent conductive layer (a first transparent conductive layer 403a, a first transparent conductive layer 403a, a first light-emitting element (R) 410R and a second light-emitting element (G) 410G). 2
By changing the thickness of the transparent conductive layer 403b, the optical distance between the reflective electrode 401 and the semi-transmissive / semi-reflective electrode 402 is changed for each light emitting element. That is, the broad light emitted from each light emitting layer of each light emitting element is between the reflective electrode 401 and the semi-transmissive / semi-reflective electrode 402.
Since light with a wavelength that resonates can be strengthened and light with a wavelength that does not resonate can be attenuated, light of different wavelengths can be obtained by changing the optical distance between the reflective electrode 401 and the semi-transmissive / semi-reflective electrode 402 for each element. It can be taken out.

The optical distance (also referred to as the optical path length) is obtained by multiplying the actual distance by the refractive index, and in the present embodiment, represents the actual film thickness multiplied by n (refractive index). . That is, "
Optical distance = actual film thickness × n ”.

In the first light emitting element (R) 410R, the reflective electrode 401 and the semi-transmissive / semi-reflective electrode 4 are used.
The total thickness up to 02 is mλ _R / 2 (where m is a natural number), and in the second light emitting element (G) 410G, the total thickness from the reflective electrode 401 to the semi-transmissive / semi-reflective electrode 402 is mλ _G / 2 ( Where m
Is a natural number), and in the third light emitting element (B) 410B, the total thickness from the reflective electrode 401 to the semi-transmissive / semi-reflective electrode 402 is mλ _B / 2 (where m is a natural number).

As described above, light (λ _R ) emitted from the third light-emitting layer (R) 404R mainly included in the EL layer 405 is extracted from the first light-emitting element (R) 410R, and the second light-emitting element (G) 4)
From 10G, light (λ _G ) emitted from the second light emitting layer (G) 404G mainly included in the EL layer 405 is extracted, and mainly from the third light emitting element (B) 410B, the EL layer 405 is extracted.
The light (λ _B ) emitted from the first light emitting layer (B) 404B included in the light is extracted. The light extracted from each light emitting element is emitted from the semi-transmissive / semi-reflective electrode 402 side.

In the above configuration, the total thickness from the reflective electrode 401 to the semi-transmissive / semi-reflective electrode 402 is strictly the total thickness from the reflective region of the reflective electrode 401 to the reflective region of the semi-transmissive / semi-reflective electrode 402. it can. However, the reflective electrode 401 and the semi-transmissive / semi-reflective electrode 40
Since it is difficult to determine the position of the reflection region in 2 exactly, the above effect can be sufficiently obtained by assuming any position of the reflection electrode 401 and the semi-transmissive / semi-reflective electrode 402 as the reflection region. It shall be possible.

Next, in the first light emitting element (R) 410R, the reflective electrode 401 to the third light emitting layer (R)
) Amplifying light emitted from the third light emitting layer (R) 404R by adjusting the optical distance to 404R to a desired film thickness ((2m ′ + 1) λ _R / 4 (where m ′ is a natural number)) Can be made. Of the light emitted from the third light emitting layer (R) 404R, the light reflected by the reflective electrode 401 and returned (first reflected light) is transflective and semi-reflective from the third light emitting layer (R) 404R. In order to cause interference with the light directly incident on the electrode 402 (first incident light), the optical distance from the reflective electrode 401 to the third light emitting layer (R) 404R is set to a desired value ((2m ′ + 1) λ _R / 4 (where m ′ is a natural number)), the phases of the first reflected light and the first incident light are matched to amplify the light emission from the third light emitting layer (R) 404R. be able to.

Note that the optical distance between the reflective electrode 401 and the third light emitting layer (R) 404R is strictly the optical distance between the reflective region in the reflective electrode 401 and the light emitting region in the third light emitting layer (R) 404R. Can do. However, the reflective region in the reflective electrode 401 and the third light emitting layer (R)
Since it is difficult to precisely determine the position of the light emitting region in 404R, the reflective electrode 40
Assuming that an arbitrary position of 1 is a reflection region and an arbitrary position of the third light emitting layer (R) 404R is a light emitting region, the above-described effects can be sufficiently obtained.

Next, in the second light-emitting element (G) 410G, the second light-emitting layer (G
) Light emission from the second light emitting layer (G) 404G by adjusting the optical distance to 404G to a desired film thickness ((2m ″ +1) λ _G / 4 (where m ″ is a natural number)) Can be amplified. Of the light emitted from the second light emitting layer (G) 404G, the light reflected by the reflective electrode 401 and returned (second reflected light) is transflective and semi-reflective from the second light emitting layer (G) 404G. In order to cause interference with the light directly incident on the electrode 402 (second incident light), the reflective electrode 401
The optical distance from the second light emitting layer (G) 404G to a desired value ((2m ″ +1) λ _G / 4 (
However, by adjusting m ″ to be a natural number)), the phases of the second reflected light and the second incident light are matched to amplify the light emission from the second light emitting layer (G) 404G. Can do.

Note that the optical distance between the reflective electrode 401 and the second light emitting layer (G) 404G is strictly an optical distance between the reflective region in the reflective electrode 401 and the light emitting region in the second light emitting layer (G) 404G. Can do. However, the reflective region in the reflective electrode 401 and the second light emitting layer (G)
Since it is difficult to precisely determine the position of the light emitting region in 404G, the reflective electrode 40
Assuming that an arbitrary position of 1 is a reflection region and an arbitrary position of the second light emitting layer (G) 404G is a light emitting region, the above-described effects can be sufficiently obtained.

Next, in the third light-emitting element (B) 410B, the first light-emitting layer (B
) The optical distance to 404B is set to a desired film thickness ((2m ′ ″ + 1) λ _B / 4 (where m ′ ″)
Is a natural number)), light emission from the first light-emitting layer (B) 404B can be amplified. Of the light emitted from the first light-emitting layer (B) 404B, the light reflected by the reflective electrode 401 and returned (third reflected light) is transflective and semi-reflective from the first light-emitting layer (B) 404B. In order to cause interference with the light directly incident on the electrode 402 (third incident light), the reflective electrode 4
The optical distance from 01 to the first light emitting layer (B) 404B is set to a desired value ((2m ′ ″ + 1) λ _B
/ 4 (where m ′ ″ is a natural number)), the third reflected light and the third
The phase with the incident light can be matched to amplify the light emission from the first light emitting layer (B) 404B.

Note that in the third light-emitting element, the optical distance between the reflective electrode 401 and the first light-emitting layer (B) 404B is strictly the light emission in the reflective region of the reflective electrode 401 and the first light-emitting layer (B) 404B. It can be said that the optical distance to the region. However, since it is difficult to precisely determine the position of the reflective region in the reflective electrode 401 and the light emitting region in the first light emitting layer (B) 404B, the arbitrary position of the reflective electrode 401 is set as the reflective region, the first light emitting layer. The above effect can be sufficiently obtained by assuming an arbitrary position of the layer (B) 404B as the light emitting region.

Note that in the above structure, each light-emitting element has a structure including a plurality of light-emitting layers in an EL layer; however, the present invention is not limited to this, for example, the tandem type described in Embodiment 3 Combined with the structure of the light-emitting element, a plurality of EL elements with a charge generation layer interposed between the light-emitting elements
A layer may be provided, and one or a plurality of light-emitting layers may be formed in each EL layer.

The light-emitting device described in this embodiment has a microcavity structure, and the same EL
Even if it has a layer, it is possible to extract light of different wavelengths for each light emitting element, so that it is not necessary to separate RGB. Therefore, it is advantageous in realizing full color because it is easy to realize high definition. A combination with a colored layer (color filter) is also possible. In addition, since it is possible to increase the emission intensity in the front direction of the specific wavelength, it is possible to reduce power consumption. This configuration is particularly useful when applied to a color display (image display device) using pixels of three or more colors, but may be used for purposes such as illumination.

(Embodiment 5)
In this embodiment, a light-emitting device including a light-emitting element which is one embodiment of the present invention will be described.

The light-emitting device may be a passive matrix light-emitting device or an active matrix light-emitting device. Note that the light-emitting element described in any of the other embodiments can be applied to the light-emitting device described in this embodiment.

In this embodiment, an active matrix light-emitting device is described with reference to FIGS.

Note that FIG. 8A is a top view illustrating the light-emitting device, and FIG. 8B illustrates FIG.
It is sectional drawing cut | disconnected by A '. An active matrix light-emitting device according to this embodiment includes a pixel portion 502 provided over an element substrate 501 and a driver circuit portion (source line driver circuit) 50.
3 and a driving circuit portion (gate line driving circuit) 504 (504a and 504b).
The pixel portion 502, the drive circuit portion 503, and the drive circuit portion 504 are sealed with a sealant 505.
It is sealed between the element substrate 501 and the sealing substrate 506.

Further, on the element substrate 501, external input terminals for transmitting signals (eg, a video signal, a clock signal, a start signal, or a reset signal) and a potential from the outside to the driver circuit portion 503 and the driver circuit portion 504 are provided. A lead wiring 507 for connection is provided. here,
An example in which an FPC (flexible printed circuit) 508 is provided as an external input terminal is shown. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.

Next, a cross-sectional structure is described with reference to FIG. A driver circuit portion and a pixel portion are formed over the element substrate 501, but here, a driver circuit portion 503 which is a source line driver circuit.
A pixel portion 502 is shown.

The driver circuit portion 503 shows an example in which a CMOS circuit in which an n-channel TFT 509 and a p-channel TFT 510 are combined is formed. Note that the circuit forming the drive circuit section is
Various CMOS circuits, PMOS circuits, or NMOS circuits may be formed. In this embodiment mode, a driver integrated type in which a driver circuit is formed over a substrate is shown; however, this is not necessarily required, and the driver circuit can be formed outside the substrate.

The pixel portion 502 includes a plurality of pixels including a switching TFT 511 and a first electrode (anode) 513 electrically connected to a wiring (source electrode or drain electrode) of the current control TFT 512 and the current control TFT 512. It is formed by. The first electrode (anode) 5
An insulator 514 is formed so as to cover the end of 13. Here, it is formed by using a positive photosensitive acrylic resin.

In order to improve the covering property of the film formed to be stacked on the upper layer, it is preferable that a curved surface having a curvature be formed at the upper end portion or the lower end portion of the insulator 514. For example, in the case where a positive photosensitive acrylic resin is used as the material of the insulator 514, it is preferable that the upper end portion of the insulator 514 has a curved surface having a curvature radius (0.2 μm to 3 μm). In addition, as the insulator 514, either a negative photosensitive resin or a positive photosensitive resin can be used, and not only an organic compound but also an inorganic compound such as silicon oxide, silicon oxynitride,
Both can be used.

An EL layer 515 and a second electrode (cathode) 516 are stacked over the first electrode (anode) 513. The EL layer 515 is provided with at least a light-emitting layer, and the light-emitting layer has a stacked structure as shown in Embodiment Mode 1. In addition to the light-emitting layer, the EL layer 515 can be provided with a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like as appropriate.

Note that a light-emitting element 517 is formed with a stacked structure of a first electrode (anode) 513, an EL layer 515, and a second electrode (cathode) 516. First electrode (anode) 513, EL layer 515
As a material used for the second electrode (cathode) 516, the material described in Embodiment Mode 2 can be used. Although not shown here, the second electrode (cathode) 516 is electrically connected to an FPC 508 which is an external input terminal.

In the cross-sectional view in FIG. 8B, only one light-emitting element 517 is illustrated; however, in the pixel portion 502, a plurality of light-emitting elements are arranged in a matrix. Pixel unit 5
In 02, three types of light emitting elements (R, G, B) can be selectively formed, respectively,
A light emitting device capable of full color display can be formed. Alternatively, a light emitting device capable of full color display may be obtained by combining with a colored layer (color filter).

Further, the sealing substrate 506 is bonded to the element substrate 501 with the sealant 505, whereby the light-emitting element 517 is provided in the space 518 surrounded by the element substrate 501, the sealing substrate 506, and the sealant 505. ing. Note that the space 518 includes a structure filled with a sealant 505 in addition to a case where the space 518 is filled with an inert gas (such as nitrogen or argon).

Note that an epoxy resin, low-melting glass, or the like is preferably used for the sealant 505. Moreover, it is desirable that these materials are materials that do not transmit moisture and oxygen as much as possible. Further, as a material used for the sealing substrate 506, in addition to a glass substrate and a quartz substrate, FRP (Fiberg
A plastic substrate made of glass-reinforced plastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like can be used.

  As described above, an active matrix light-emitting device can be obtained.

Note that the structure described in this embodiment can be combined with any of the structures described in other embodiments as appropriate.

(Embodiment 6)
In this embodiment, examples of various electronic devices completed using a light-emitting device manufactured using the light-emitting element which is one embodiment of the present invention will be described with reference to FIGS.

As electronic devices to which the light-emitting device is applied, for example, a television set (also referred to as a television or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (a mobile phone, a mobile phone) Also called a telephone device),
A large-sized game machine such as a portable game machine, a portable information terminal, a sound reproduction device, and a pachinko machine can be given. Specific examples of these electronic devices are shown in FIGS.

FIG. 9A illustrates an example of a television device. The television device 7100
A display portion 7103 is incorporated in the housing 7101. Images can be displayed on the display portion 7103, and a light-emitting device can be used for the display portion 7103. Here, a structure in which the housing 7101 is supported by a stand 7105 is shown.

The television device 7100 can be operated with an operation switch included in the housing 7101 or a separate remote controller 7110. Channels and volume can be operated with an operation key 7109 provided in the remote controller 7110, and an image displayed on the display portion 7103 can be operated. The remote controller 7110 may be provided with a display portion 7107 for displaying information output from the remote controller 7110.

Note that the television device 7100 is provided with a receiver, a modem, and the like. A general television broadcast can be received by a receiver, and further connected to a wired or wireless communication network via a modem so that it can be transmitted in one direction (sender to receiver) or two-way (
It is also possible to perform information communication between a sender and a receiver, or between receivers).

FIG. 9B illustrates a computer, which includes a main body 7201, a housing 7202, a display portion 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, and the like. Note that the computer is manufactured by using the light-emitting device for the display portion 7203.

FIG. 9C illustrates a portable game machine, which includes two housings, a housing 7301 and a housing 7302, which are connected with a joint portion 7303 so that the portable game machine can be opened or folded. A display portion 7304 is incorporated in the housing 7301 and a display portion 7305 is incorporated in the housing 7302. In addition, the portable game machine illustrated in FIG. 9C includes a speaker portion 7306, a recording medium insertion portion 7307, and the like.
LED lamp 7308, input means (operation key 7309, connection terminal 7310, sensor 73
11 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, Including a function of measuring inclination, vibration, odor, or infrared light), a microphone 7312), and the like. Of course, the configuration of the portable game machine is not limited to that described above, and at least the display unit 73.
04 and the display portion 7305 may be provided with a light-emitting device for one or both of them, and other accessory equipment may be provided as appropriate. The portable game machine shown in FIG. 9C shares information by reading a program or data recorded in a recording medium and displaying the program or data on a display unit, or by performing wireless communication with another portable game machine. It has a function. Note that the function of the portable game machine illustrated in FIG. 9C is not limited to this, and the portable game machine can have a variety of functions.

FIG. 9D illustrates an example of a mobile phone. A mobile phone 7400 includes a housing 7401.
In addition to the display portion 7402 incorporated in the mobile phone, an operation button 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like are provided. Note that the cellular phone 7400 is manufactured using the light-emitting device for the display portion 7402.

Information can be input to the cellular phone 7400 illustrated in FIG. 9D by touching the display portion 7402 with a finger or the like. In addition, operations such as making a call or creating a mail can be performed by touching the display portion 7402 with a finger or the like.

There are mainly three screen modes of the display portion 7402. The first mode is a display mode mainly for displaying an image. The first is a display mode mainly for displaying images, and the second is an input mode mainly for inputting information such as characters. The third is a display + input mode in which the display mode and the input mode are mixed.

For example, when making a call or creating a mail, the display portion 7402 may be set to a character input mode mainly for inputting characters, and an operation for inputting characters displayed on the screen may be performed. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display portion 7402.

Further, by providing a detection device having a sensor for detecting the inclination of a gyroscope, an acceleration sensor, or the like inside the mobile phone 7400, the orientation (vertical or horizontal) of the mobile phone 7400 is determined,
The screen display of the display portion 7402 can be automatically switched.

Further, the screen mode is switched by touching the display portion 7402 or operating the operation button 7403 of the housing 7401. Further, switching can be performed depending on the type of image displayed on the display portion 7402. For example, if the image signal to be displayed on the display unit is moving image data, the mode is switched to the display mode, and if it is text data, the mode is switched to the input mode.

Further, in the input mode, when a signal detected by the optical sensor of the display unit 7402 is detected and there is no input by a touch operation of the display unit 7402 for a certain period, the screen mode is switched from the input mode to the display mode. You may control.

The display portion 7402 can function as an image sensor. For example, the display unit 7
User authentication can be performed by touching 402 with a palm or a finger and imaging a palm print, fingerprint, or the like.
In addition, if a backlight that emits near-infrared light or a sensing light source that emits near-infrared light is used for the display portion, finger veins, palm veins, and the like can be imaged.

10A and 10B illustrate a tablet terminal that can be folded. FIG.
) Is an open state, and the tablet terminal includes a housing 9630, a display portion 9631a, a display portion 9631b, a display mode change switch 9034, a power switch 9035, a power saving mode change switch 9036, a fastener 9033, and an operation switch 9038. Have. Note that the tablet terminal is manufactured using the light-emitting device for one or both of the display portion 9631a and the display portion 9631b.

Part of the display portion 9631 a can be a touch panel region 9632 a and data can be input when a displayed operation key 9637 is touched. The display unit 96
In FIG. 31a, as an example, a configuration in which half of the area has a display-only function and a configuration in which the other half has a touch panel function is shown, but the configuration is not limited thereto. Display unit 96
All the regions 31a may have a touch panel function. For example, the display unit 9
The entire surface of 631a can be displayed as a keyboard button and used as a touch panel, and the display portion 9631b can be used as a display screen.

Further, in the display portion 9631b, as in the display portion 9631a, part of the display portion 9631b can be a touch panel region 9632b. Further, a keyboard button can be displayed on the display portion 9631b by touching a position where the keyboard display switching button 9539 on the touch panel is displayed with a finger or a stylus.

Touch input can be performed simultaneously on the touch panel region 9632a and the touch panel region 9632b.

A display mode switching switch 9034 can switch the display direction such as vertical display or horizontal display, and can select switching between monochrome display and color display. The power saving mode change-over switch 9036 can optimize the display luminance in accordance with the amount of external light during use detected by an optical sensor built in the tablet terminal. The tablet terminal may include not only an optical sensor but also other detection devices such as a gyroscope, an acceleration sensor, and other sensors that detect inclination.

FIG. 10A illustrates an example in which the display areas of the display portion 9631b and the display portion 9631a are the same, but there is no particular limitation, and one size may be different from the other size, and the display quality may be different. May be different. For example, one display panel may be capable of displaying images with higher definition than the other.

FIG. 10B illustrates a closed state, in which the tablet terminal includes a housing 9630, a solar cell 9
633, a charge / discharge control circuit 9634, a battery 9635, and a DCDC converter 9636. Note that in FIG. 10B, a battery 963 is illustrated as an example of the charge / discharge control circuit 9634.
5 shows a configuration having a DCDC converter 9636.

Note that since the tablet terminal can be folded in two, the housing 9630 can be closed when not in use. Therefore, since the display portion 9631a and the display portion 9631b can be protected,
It is possible to provide a tablet terminal with excellent durability and high reliability from the viewpoint of long-term use.

In addition, the tablet terminal shown in FIGS. 10A and 10B has a function for displaying various information (still images, moving images, text images, etc.), a calendar, a date, or a time. A function for displaying on the display unit, a touch input function for performing touch input operation or editing of information displayed on the display unit, a function for controlling processing by various software (programs), and the like can be provided.

Electric power can be supplied to the touch panel, the display unit, the video signal processing unit, or the like by the solar battery 9633 mounted on the surface of the tablet terminal. Note that the solar cell 9633 can be provided on one or both surfaces of the housing 9630 and the battery 9635 can be charged efficiently. Note that as the battery 9635, when a lithium ion battery is used, there is an advantage that reduction in size can be achieved.

Further, the structure and operation of the charge / discharge control circuit 9634 illustrated in FIG.
A block diagram is shown in FIG. FIG. 10C illustrates a solar battery 9633, a battery 9
635, DCDC converter 9636, converter 9638, switches SW1 to SW3
, A display portion 9631, a battery 9635, a DCDC converter 963
6, the converter 9638, and the switches SW1 to SW3 are portions corresponding to the charge / discharge control circuit 9634 illustrated in FIG.

First, an example of operation in the case where power is generated by the solar battery 9633 using external light is described. The power generated by the solar battery 9633 is boosted or lowered by the DCDC converter 9636 so that the voltage for charging the battery 9635 is obtained. The display portion 9631
When the power from the solar cell 9633 is used for the operation, the switch SW1 is turned on, and the converter 9638 increases or decreases the voltage required for the display portion 9631. When display on the display portion 9631 is not performed, the switch SW1 is turned off and the switch S1 is turned off.
The battery 9635 may be charged by turning on W2.

Note that the solar battery 9633 is shown as an example of the power generation unit, but is not particularly limited.
The battery 9635 may be charged by other power generation means such as a piezoelectric element (piezo element) or a thermoelectric conversion element (Peltier element). For example, a non-contact power transmission module that wirelessly (contactlessly) transmits and receives power for charging and other charging means may be combined.

Needless to say, the electronic device illustrated in FIG. 10 is not particularly limited as long as the display portion described in the above embodiment is included.

As described above, an electronic device can be obtained by using the light-emitting device which is one embodiment of the present invention. The application range of the light-emitting device is extremely wide and can be applied to electronic devices in various fields.

Note that the structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

(Embodiment 7)
In this embodiment, an example of a lighting device to which a light-emitting device including a light-emitting element which is one embodiment of the present invention is applied will be described with reference to FIGS.

FIG. 11 illustrates an example in which the light-emitting device is used as an indoor lighting device 8001. Note that since the light-emitting device can have a large area, a large-area lighting device can also be formed. In addition, by using a housing having a curved surface, the lighting device 8002 in which the light emitting region has a curved surface can be formed. A light-emitting element included in the light-emitting device described in this embodiment has a thin film shape, and the degree of freedom in designing a housing is high. Therefore, it is possible to form a lighting device with various designs. Further, a large lighting device 8003 may be provided on the wall surface of the room.

Further, by using the light-emitting device on the surface of the table, the lighting device 8004 having a function as a table can be obtained. Note that a lighting device having a function as furniture can be obtained by using a light-emitting device for part of other furniture.

As described above, various lighting devices to which the light-emitting device is applied can be obtained. Note that these lighting devices are included in one embodiment of the present invention.

The structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

In this example, a light-emitting element 1 which is one embodiment of the present invention will be described with reference to FIGS. Note that chemical formulas of materials used in this example are shown below.

<< Production of Light-Emitting Element 1 >>
First, indium tin oxide containing silicon oxide (ITSO) was formed over a glass substrate 1100 by a sputtering method, so that a first electrode 1101 functioning as an anode was formed. The film thickness was 110 nm and the electrode area was 2 mm × 2 mm.

Next, as a pretreatment for forming the light-emitting element 1 over the substrate 1100, the substrate surface was washed with water and baked at 200 ° C. for 1 hour, and then UV ozone treatment was performed for 370 seconds.

Thereafter, the substrate is introduced into a vacuum vapor deposition apparatus whose internal pressure is reduced to about 10 ⁻⁴ Pa, vacuum baking is performed at 170 ° C. for 30 minutes in a heating chamber within the vacuum vapor deposition apparatus, and then the substrate 1100 is subjected to about 30 minutes. Allowed to cool.

Next, the substrate 1100 was fixed to a holder provided in the vacuum evaporation apparatus so that the surface on which the first electrode 1101 was formed faced down. In this embodiment, the EL layer 1 is formed by vacuum deposition.
A case where the hole injection layer 1111, the hole transport layer 1112, the light emitting layer 1113, the electron transport layer 1114, and the electron injection layer 1115 that form the layer 102 are sequentially formed is described.

After reducing the pressure in the vacuum apparatus to 10 ⁻⁴ Pa, 1,3,5-tri (dibenzothiophene-4
-Yl) benzene (abbreviation: DBT3P-II) and molybdenum oxide (VI)
A hole injection layer 1111 was formed over the first electrode 1101 by co-evaporation so that P-II (abbreviation): molybdenum oxide = 4: 2 (mass ratio). The film thickness was 20 nm. Note that co-evaporation is an evaporation method in which a plurality of different substances are simultaneously evaporated from different evaporation sources.

Next, a hole transporting layer 1112 was formed by evaporating 4-phenyl-4 ′-(9-phenylfluoren-9-yl) triphenylamine (abbreviation: BPAFLP) to a thickness of 20 nm.

Next, a light-emitting layer 1113 was formed over the hole-transport layer 1112. 4,6-bis [3- (9H
-Carbazol-9-yl) phenyl] pyrimidine (abbreviation: 4,6mCzP2Pm), N
-(1,1'-biphenyl-4-yl) -N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl] -9,9-dimethyl-9H-fluoren-2-amine (abbreviation) :
PCBBiF), tris (2-phenylpyridinato) iridium (III) (abbreviation: [I
r (ppy) ₃ ]), 4,6mCzP2Pm (abbreviation): PCBBiF (abbreviation): [Ir
(Ppy) ₃ ] (abbreviation) = 0.7: 0.3: 0.05 (mass ratio) is co-evaporated to form a first light-emitting layer 1113a with a thickness of 20 nm, and then 2- [ 3 ′-(Dibenzothiophen-4-yl) biphenyl-3-yl] dibenzo [f, h] quinoxaline (abbreviation: 2 mD
BTBPDBq-II), PCBBiF (abbreviation), bis {4,6-dimethyl-2- [5-
(2,6-Dimethylphenyl) -3- (3,5-dimethylphenyl) -2-pyrazinyl-
κN] phenyl-κC} (2,8-dimethyl-4,6-nonandionato-κ ² O, O ′)
Iridium (III) (abbreviation: [Ir (dmdppr-dmp) ₂ (divm)])
2mDBTBPDBq-II (abbreviation): PCBBiF (abbreviation): [Ir (dmdppr-
dmp) ₂ (divm)] (abbreviation) = 0.9: 0.1: 0.05 (mass ratio) and co-evaporated to form the second light-emitting layer 1113b with a thickness of 20 nm. A light emitting layer 1113 having a stacked structure was formed.

Next, 2 mDBTBBPDBq-II (abbreviation) was deposited on the light-emitting layer 1113 by 15 nm, and then bathophenanthroline (abbreviation: Bphen) was deposited by 10 nm, whereby the electron transport layer 1114 was formed. Further, an electron injection layer 1115 was formed on the electron transport layer 1114 by depositing 1 nm of lithium fluoride.

Finally, aluminum was deposited on the electron injection layer 1115 so as to have a thickness of 200 nm to form a second electrode 1103 serving as a cathode, whereby the light-emitting element 1 was obtained. Note that, in the above-described vapor deposition process, the vapor deposition was all performed by a resistance heating method.

  Table 1 shows an element structure of the light-emitting element 1 obtained as described above.

The produced light-emitting element 1 was sealed in a glove box in a nitrogen atmosphere so as not to be exposed to the atmosphere (a sealing material was applied around the element and heat-treated at 80 ° C. for 1 hour at the time of sealing).

<< Operating Characteristics of Light-Emitting Element 1 >>
The operating characteristics of the manufactured light-emitting element 1 were measured. The measurement was performed at room temperature (atmosphere kept at 25 ° C.).

First, current density-luminance characteristics of the light-emitting element 1 are shown in FIG. Note that in FIG. 13, the vertical axis represents luminance (cd / m ² ) and the horizontal axis represents current density (mA / cm ² ). Further, voltage-luminance characteristics of the light-emitting element 1 are shown in FIG. In FIG. 14, the vertical axis represents luminance (cd / m ² ),
The horizontal axis represents voltage (V). Further, FIG. 15 shows luminance-current efficiency characteristics of the light-emitting element 1. Note that in FIG. 15, the vertical axis represents current efficiency (cd / A) and the horizontal axis represents luminance (cd / m ² ). Further, voltage-current characteristics of the light-emitting element 1 are shown in FIG. In FIG. 16, the vertical axis represents current (mA), and the horizontal axis represents voltage (V).

From FIG. 15, it is found that the light-emitting element 1 which is one embodiment of the present invention is a highly efficient element. In addition, Table 2 below shows main initial characteristic values of the light-emitting element 1 around 1000 cd / m ² .

From the above results, it can be seen that the light-emitting element 1 manufactured in this example exhibits high external quantum efficiency and thus exhibits high light emission efficiency.

Further, FIG. 17 shows an emission spectrum obtained when a current is passed through the light-emitting element 1 at a current density of 25 mA / cm ² . As shown in FIG. 17, the emission spectrum of the light-emitting element 1 is 519 nm and 615 nm.
It has two peaks in the vicinity of nm, and each phosphorescent organometallic iridium complex [Ir (
(pypy) ₃ ] and [Ir (dmdpppr-dmp) ₂ (divm)].

From the cyclic voltammetry measurement, the LUMO level of 4,6mCzP2Pm, which is the first organic compound having an electron transporting property, is -2.88 eV, and 2mDBTBPDBq, which is the third organic compound having an electron transporting property. The LUMO level of -II was estimated to be -2.94 eV. Therefore, the first organic compound is more LUMO than the third organic compound.
The level is high.

Here, FIG. 18 shows 4,6mCzP2Pm, which is a first organic compound having an electron transporting property.
The emission spectrum of the thin film, the emission spectrum of the thin film of PCBBiF which is the second organic compound having a hole transporting property, and the emission spectrum of the mixed film (co-deposited film) of 4,6 mCzP2Pm and PCBBiF are shown. FIG. 19 shows a second organic compound 2 having an electron transporting property.
The emission spectrum of the thin film of mDBTBPDBq-II, the emission spectrum of the thin film of PCBBiF which is the second organic compound having a hole transport property, and 2mDBTBPDBq-II and PC
The emission spectrum of the mixed film (co-deposited film) of BBiF is shown.

From FIG. 18 and FIG. 19, since the emission wavelength of the mixed film is located longer than the emission wavelength of the single film of each material, the first organic compound (4,6 mCzP2Pm) and the second organic compound (P
It can be seen that CBBiF), the third organic compound (2mDBTBPDBq-II), and the second organic compound (PCBBiF) each form an exciplex.

Reference Signs List 101 first electrode 102 second electrode 103 EL layer 104 hole injection layer 105 hole transport layer 106 light emitting layer 106a first light emitting layer 106b second light emitting layer 107 electron transport layer 108 electron injection layer 109 luminescent substance 109a First light-emitting substance 109b that converts triplet excitation energy into light emission 109b Second light-emitting substance 110 that changes triplet excitation energy into light emission 110 First organic compound 111 Second organic compound 112 Third organic compound 201 1st 1 electrode (anode)
202 Second electrode (cathode)
203 EL layer 204 Hole injection layer 205 Hole transport layer 206 Light emitting layer 206a First light emitting layer 206b Second light emitting layer 207 Electron transport layer 208 Electron injection layer 209 Luminescent substance 209a First triplet excitation energy is changed to light emission. 1 luminescent material 209b second luminescent material 210 that converts triplet excitation energy into light emission first organic compound 211 second organic compound 212 third organic compound 301 first electrode 302 (1) first EL layer 302 (2) Second EL layer 302 (n-1) (n-1) EL layer 302 (n) (n) EL layer 304 Second electrode 305 Charge generation layer (I)
305 (1) First charge generation layer (I)
305 (2) Second charge generation layer (I)
305 (n-2) th (n-2) charge generation layer (I)
305 (n-1) th (n-1) charge generation layer (I)
401 Reflective electrode 402 Transflective / semi-reflective electrode 403a First transparent conductive layer 403b Second transparent conductive layer 404B First light emitting layer (B)
404G Second light emitting layer (G)
404R Third light emitting layer (R)
405 EL layer 410R First light emitting element (R)
410G Second light emitting element (G)
410B Third light emitting element (B)
501 Element substrate 502 Pixel portion 503 Drive circuit portion (source line drive circuit)
504a, 504b Drive circuit section (gate line drive circuit)
505 Sealing material 506 Sealing substrate 507 Lead wiring 508 FPC (flexible printed circuit)
509 n-channel TFT
510 p-channel TFT
511 TFT for switching
512 Current control TFT
513 First electrode (anode)
514 Insulator 515 EL layer 516 Second electrode (cathode)
517 Light-emitting element 518 Space 7100 Television apparatus 7101 Case 7103 Display unit 7105 Stand 7107 Display unit 7109 Operation key 7110 Remote controller 7201 Main body 7202 Case 7203 Display unit 7204 Keyboard 7205 External connection port 7206 Pointing device 7301 Case 7302 Case 7303 Connection unit 7304 Display unit 7305 Display unit 7306 Speaker unit 7307 Recording medium insertion unit 7308 LED lamp 7309 Operation key 7310 Connection terminal 7311 Sensor 7312 Microphone 7400 Mobile phone 7401 Case 7402 Display unit 7403 Operation button 7404 External connection port 7405 Speaker 7406 Microphone 8001 Lighting device 8002 Lighting device 8003 Lighting device 8004 Lighting device 9033 Fastener 90 4 Display mode switch 9035 Power switch 9036 Power saving mode switch 9038 Operation switch 9630 Case 9631 Display unit 9631a Display unit 9631b Display unit 9632a Touch panel region 9632b Touch panel region 9633 Solar cell 9634 Charge / discharge control circuit 9635 Battery 9636 DCDC converter 9637 Operation key 9638 Converter 9539 Button

Claims (5)

Having a light emitting layer between the anode and the cathode;
The light emitting layer has a first light emitting layer and a second light emitting layer,
The first light emitting layer is located between the anode and the second light emitting layer,
The first light emitting layer includes a first light emitting substance that converts triplet excitation energy into light emission, a first organic compound, and a second organic compound,
The second light emitting layer includes a second light emitting substance that converts triplet excitation energy into light emission, the second organic compound, and a third organic compound,
The difference between the LUMO level of the first organic compound and the HOMO level of the second organic compound is
Greater than the difference between the LUMO level of the third organic compound and the HOMO level of the second organic compound;
The first luminescent material emits light having a shorter wavelength than the second luminescent material;
The first organic compound and the second organic compound are a combination that forms a first exciplex,
The light emitting element which is a combination in which the second organic compound and the third organic compound form a second exciplex. In claim 1,
The first luminescent material is a phosphorescent compound or a thermally activated delayed fluorescent material,
The light-emitting element, wherein the second light-emitting substance is a phosphorescent compound or a thermally activated delayed fluorescent material.   A light-emitting device comprising the light-emitting element according to claim 1.   An electronic apparatus comprising the light emitting device according to claim 3.   An illumination device comprising the light emitting device according to claim 3.