JP6562241B2 - Non-contact voltage sensor and power measuring device - Google Patents

Description

  The present invention measures the applied voltage to the core wire in a state where the electrode of the detection probe is not in contact with the core wire via a coupling capacitance generated between the core wire of the electric wire to which an AC voltage is applied and the electrode of the detection probe. The present invention relates to a non-contact voltage sensor and a power measurement device using the voltage sensor. In addition, the non-contact voltage sensor of this invention includes both the case where a detection probe contacts the insulation coating of an electric wire, and the case where it does not contact.

In this type of non-contact voltage sensor, the coupling capacitance changes due to the difference in dielectric constant due to the influence of the surrounding environment such as the positional relationship of the detection probe with respect to the wire, the insulation coating material of the wire, and the temperature and humidity. Therefore, there is a case where the voltage applied to the electric wire (core wire) cannot be detected with high accuracy.
Conventional techniques described in Patent Documents 1 to 3 are known as non-contact voltage sensors for solving the above problems.

First, the voltage measuring apparatus described in Patent Documents 1 and 2 is a variable capacitance circuit composed of a detection electrode, a capacitance changing function body such as a diode or a capacitor, and a driving circuit thereof, a current detector, an amplifier circuit, a synchronous detection circuit, an integration circuit. The circuit includes a circuit, a voltage generation circuit, and the like.
In these voltage measurement devices, by changing the capacitance of the capacitance change function body and changing the impedance, the current flowing through the coupling capacitance between the measurement object and the detection electrode changes according to the frequency of the capacitance change function body. . The current is converted into a voltage through a current detector, and a signal corresponding to the voltage to be measured is generated through a synchronous detection circuit, an amplifier circuit, and an integration circuit, and this signal is amplified by the voltage generation circuit. .

A detection electrode, a current detector, a capacitance change function body, and a voltage generation circuit are connected in series, and the output of the voltage generation circuit is fed back so that the current flowing through the current detector is reduced. Is feedback-controlled so as to be equal to the voltage of the measurement object, and the voltage applied to the measurement object is detected using the feedback voltage as a measurement signal.
According to this prior art, since the voltage of the measurement object is controlled to be equal to the voltage generated by the voltage generation circuit, the influence when the coupling capacitance between the measurement object and the detection electrode changes is suppressed. Can do.

Next, the prior art described in Patent Document 3 will be described.
This non-contact voltage detection device has a detection probe and a voltage measuring unit connected to an auxiliary capacitor by attaching a detection probe formed with an auxiliary capacitor having a predetermined capacitance to an electric wire having an insulation coating on a core wire. A voltage applied to the core wire is measured by a measuring unit. The detection probe includes the first electrode having a large area on the electric wire side and the second electrode for voltage detection partially facing the first electrode in an insulating member wound around the insulating coating of the electric wire. An auxiliary capacitor is formed and a measurement line connected to the second electrode is drawn out.

  Here, the capacitance of the auxiliary capacitor is set to be sufficiently smaller than the capacitance between the core wire of the electric wire and the first electrode. By using such a detection probe, the input voltage of the voltage measurement unit is almost determined by the ratio of the capacitance between the first electrode and the second electrode and the capacitance of the detection capacitor, so The influence of the change in the coupling capacity between the two can be suppressed.

JP 2007-163415 A (paragraphs [0038] to [0046], FIG. 1, etc.) JP 2009-162608 A (paragraphs [0039] to [0051], FIG. 1 etc.) JP 2012-163394 A (paragraphs [0023] to [0031], FIG. 3 etc.)

  In the prior arts described in Patent Documents 1 and 2, feedback control has a characteristic that an error (deviation between the measurement voltage and the feedback voltage) occurs. This error is caused by the magnitude of the detection signal by the current detector ( Sensitivity) and the gain of the amplifier circuit at the subsequent stage. Here, the larger the detection signal from the current detector and the larger the gain of the subsequent amplifier circuit, the smaller the error. Therefore, in this type of measuring apparatus, an allowable error is determined in consideration of measurement accuracy and the like, and the gain of the amplifier circuit is determined so as to correspond to the error.

  However, when the gain of the amplifier circuit is increased too much, there is a problem that the stability and noise resistance of the feedback circuit are lowered, and sufficient measurement accuracy and reliability cannot be obtained. As another method for obtaining the desired accuracy by reducing the gain of the amplifier circuit as much as possible, there is a method of increasing the detection signal by the current detector, but the coupling capacitance between the core wire and the detection electrode is small. For this reason (approximately several [pF]), the current flowing through the current detector is almost determined by the coupling capacitance. This coupling capacitance is proportional to the electrode area and dielectric constant, and inversely proportional to the distance between the core wire and the electrode. Therefore, in order to increase the current flowing through the current detector, the distance between the core wire and the electrode should be as short as possible. Moreover, it is necessary to increase the electrode area and the dielectric constant.

In this regard, for example, in the prior art described in Patent Document 3, the detection probe is configured by using a flexible insulating member, so that the detection probe is brought into close contact with the insulating coating even if the diameter of the electric wire changes. It is possible to shorten the distance between the core wire and the electrode. However, in this prior art, there is a concern that the manufacturing cost increases because a plurality of electrodes must be built in the detection probe.
Moreover, in the prior art described in Patent Documents 1 and 2, the detection electrode is housed in a case having a predetermined shape with a through hole. For example, when the diameter of the through hole is set in accordance with a thick electric wire, For electric wires, the distance between the core wire and the electrode becomes longer, and the air intervening between the electrode and the electric wire lowers the dielectric constant of the space, reducing the coupling capacity and providing sufficient measurement accuracy. There is no problem.

  Further, in Patent Documents 1 and 2, since the capacitance changing function body that changes the impedance in order to modulate the detection signal is connected in series with the detection electrode and the current detector, the drive signal (drive current) of this function body May be detected as a noise component by the current detector, which may affect the measurement accuracy. As a countermeasure, in Patent Documents 1 and 2, the structure is configured as a bridge so that a drive signal component is not detected by a current detector. However, the equilibrium state of the bridge must be strictly controlled and manufactured. There is a risk that the cost of up or adjustment will increase.

In the prior art described in Patent Document 3, since the detection signal is determined by the ratio between the capacity of the auxiliary capacitor and the capacity of the detection capacitor, it is necessary to always maintain the ratio of both capacities with high accuracy. However, the capacities of the auxiliary capacitor and the detection capacitor created in the insulating member change due to the influence of ambient temperature and humidity, etc., and it is difficult to always maintain high accuracy. Furthermore, the positional relationship of the electrodes is shifted due to the stress applied to the flexible detection probe during mounting, and the capacitance of the auxiliary capacitor, which is particularly required to have a small capacitance, is likely to change, making it difficult to measure the voltage with high accuracy. was there.

  Therefore, the main problem to be solved by the present invention is to provide a voltage sensor capable of measuring an AC voltage applied to an electric wire with high accuracy in a non-contact manner, and a power measurement device using the non-contact voltage sensor. There is.

In order to solve the above-mentioned problem, the invention according to claim 1 is configured such that an AC voltage applied to the core wire of the electric wire is not contacted with the core wire by using a detection probe arranged in an external measurement of an insulating coating surrounding the core wire. In the non-contact voltage sensor that can be measured in the state of
The detection probe is
Comprising a electrodes you face the core wire via the insulating coating,
The detection circuit connected to the electrode is
A modulation circuit that modulates a current flowing through a coupling capacitor formed between the core wire and the electrode into a current having a frequency higher than the frequency of the AC voltage by turning on / off a semiconductor switching element;
A drive circuit for driving the semiconductor switching element;
Current detection means for detecting the current modulated by the modulation circuit;
An amplification circuit for amplifying the output of the current detection means;
A demodulation circuit for detecting an original frequency component from the output of the amplification circuit;
A voltage generation circuit for generating a voltage based on the output of the demodulation circuit;
A measurement circuit for measuring the output voltage of the voltage generation circuit as the AC voltage;
Equipped with a,
The modulation circuit is connected in parallel to the current detection means .

The invention according to claim 2 is the non-contact voltage sensor according to claim 1, characterized in that the semiconductor switching element is a junction FET, MOSFET, IGBT, or bipolar transistor .

According to a third aspect of the present invention, in the non-contact voltage sensor according to the first or second aspect, the modulation circuit can pass a current bidirectionally by connecting the two semiconductor switching elements in anti-series. It is characterized by being.

According to a fourth aspect of the present invention, in the non-contact voltage sensor according to any one of the first to third aspects, the detection probe has a metal thin film built in an insulating member and has flexibility as a whole. The detection probe can be mounted by being wound in close contact with the outer peripheral surface of the insulating coating .

Power measuring apparatus according to claim 5, a voltage measuring device using a non-contact voltage sensor according to any one of claims 1 to 4, a current measuring device for measuring the current flowing before Symbol wire, the provided, it characterized that you measure the power on the basis of the current measurement signal voltage measurement signal by the voltage measuring device and by the current measuring device.

  ADVANTAGE OF THE INVENTION According to this invention, the voltage sensor which can measure an alternating voltage with high precision with respect to the various electric wires from which a wire diameter differs, and the electric power measuring apparatus using this voltage sensor can be provided. In addition, since the electrode structure of the detection probe is simpler than the prior art described in Patent Document 3, the cost can be reduced.

It is a circuit block diagram of the non-contact voltage sensor which concerns on the basic form of this invention. It is sectional drawing which showed the structure of the detection probe in a basic form with the electric wire. It is a figure which shows the relationship between the coupling capacity | capacitance and detection error in a basic form. It is a circuit block diagram of the non-contact voltage sensor which concerns on 1st Embodiment of this invention. It is a block diagram of the electric power measurement apparatus which concerns on 2nd Embodiment of this invention. It is a schematic block diagram of the non-contact voltage sensor which concerns on 2nd Embodiment. It is a circuit block diagram of the non-contact voltage sensor which concerns on 2nd Embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a circuit configuration diagram of a non-contact voltage sensor according to a basic form of the present invention. This voltage sensor is composed of a detection probe 2 wound so as to be in close contact with the insulated coated electric wire 1 and a voltage detection circuit 3 connected to the detection probe 2, and an AC voltage V applied to the electric wire 1. ₁ is measured.

FIG. 2 is a cross-sectional view showing the configuration of the detection probe 2 together with the electric wire 1.
As shown in FIG. 2, the electric wire 1 is configured by covering a core wire 1a with an insulating coating 1b. The detection probe 2 includes an electrode 2a made of a metal thin film in an insulating member 2b, has flexibility and flexibility as a whole, and is wound around the surface of the insulating coating 1b of the electric wire 1 and attached.
In FIG. 1 and FIG. 2, C ₀ indicates a coupling capacitance formed between the core wire 1a and the electrode 2a.

The voltage detection circuit 3 shown in FIG. 1 includes a modulation circuit 4, a drive circuit 5, a detection transformer 6, filter circuits 7, 10, 12, an amplifier circuit 8, a demodulation circuit 9, an oscillation circuit 11, a high voltage generation circuit 13, and a voltage divider. The resistor 14 is configured.
The modulation circuit 4 is configured by serially connecting semiconductor switching elements 4 a and 4 b such as junction FETs whose gates are commonly connected in the reverse direction, and the gates of these switching elements 4 a and 4 b are connected via a filter circuit 10. Are connected to the drive circuit 5. The drain of one switching element 4a is connected to the electrode 2a of the detection probe 2, and the drain of the other switching element 4b is connected to the output side of the high voltage generation circuit 13 via a transformer 6 as current detection means. .
The switching elements 4a and 4b may be MOSFETs or IGBTs as well as the junction type FETs shown.

The switching elements 4 a and 4 b of the modulation circuit 4 are turned on / off by a drive signal input from the drive circuit 5 via the filter circuit 10. Switching elements 4a, the ON / OFF of 4b, the current flowing through the core 1a of the electric wire 1 is modulated into a current of higher frequency than the frequency of the AC voltage V _1, the transformer 6 detects the modulated current. The filter circuit 7 extracts a modulated high frequency component from the output signal of the transformer 6, and the amplifier circuit 8 amplifies the output signal of the filter circuit 7.

The demodulating circuit 9 extracts the original frequency component from the output signal of the amplifying circuit 8, and the subsequent filter circuit 12 removes the high frequency component from the demodulated signal. Here, the oscillation circuit 11 sends a synchronization signal to the demodulation circuit 9 and the drive circuit 5.
The high voltage generation circuit 13 generates a high voltage based on the output signal of the filter circuit 12, and feeds back the high voltage to the transformer 6 to perform feedback control. Note that the voltage dividing resistor 14 divides the output voltage of the high voltage generation circuit 13 and outputs it as a detection signal of the AC voltage V _{1 to be} measured. Here, the high voltage generation circuit 13 generates a signal having a level equivalent to the AC voltage V ₁ applied to the electric wire 1 (for example, several tens [V] to several hundred [V]) and outputs the signal to the voltage dividing resistor 14 side. And returns to the primary side of the transformer 6.
Here, the transformer 6 is used as the current detection means, but it is sufficient that the primary side (the side through which the current from the electrode 2a flows) and the secondary side (the side from which the detection signal is output) are insulated. As the current detection means, for example, an insulating photocoupler may be used instead of the transformer 6.

  Moreover, in this voltage sensor, since the voltage to be measured is alternating current, the direction of the current flowing through the switching elements 4a and 4b is both positive and negative (up and down in the figure). Junction FETs, MOSFETs, and IGBTs as switching elements using a semiconductor are in a conductive state through a diode (body diode) inside the element, so that the switching elements are connected in series in the reverse direction as shown in FIG. By connecting and using, current in both directions can be turned ON / OFF. In FIG. 1, when a current flows from the top to the bottom, the upper switching element 4a is turned off, and when a current flows from the bottom to the top, the lower switching element 4b is turned off.

Further, the processing order of the output signal of the transformer 6 is not limited to the order of the transformer 6 → the filter circuit 7 → the amplification circuit 8 → the demodulation circuit 9 as shown in FIG. 1, but the transformer 6 → the amplification circuit 8 → the filter circuit 7 → Processing may be performed in the order of the demodulation circuit 9.
Further, the shape condition of this prevents the input of the feedback voltage to the driving circuit 5 (e.g. 100 [Hz] or less), the switching elements 4a to be sent from the drive circuit 5, 4b of the drive signal (e.g. several hundred [kHz] In order to pass only a few [MHz]), the filter circuit 10 which consists of a capacitor | condenser and resistance is used. However, the filter circuit 10 may be configured such that an insulation photocoupler or an insulation transformer is used to send a drive signal to the switching elements 4a and 4b while no feedback voltage is input to the drive circuit 5. .

Next, the detection operation of the present form state.
By winding the detection probe 2 in close contact with the electric wire 1, a coupling capacitance C ₀ is formed between the core wire 1 a of the electric wire 1 and the electrode 2 a of the detection probe 2. Thus, through the coupling capacitor C _0, a current flows to the detection circuit 3.

The oscillation circuit 11 generates a drive signal for driving the switching elements 4a and 4b at a frequency f ₁ (several hundred [kHz] to several [MHz]) sufficiently higher than the commercial frequency (50 to 60 [Hz]). . The ON / OFF operation of the switching element according to this drive signal modulates the current flowing through the coupling capacitor C ₀ to the frequency f ₁ . In this way, by increasing the frequency of the detection signal and extracting only the high frequency component by the filter circuit 7 subsequent to the transformer 6, it is possible to remove the noise component derived from the commercial frequency. Further, since the form status of this is detecting the current by transformer 6, it is possible to reduce the size of the transformer 6 by high frequency signal components.

The detection signal from the transformer 6 passes only a signal in a frequency band (f ₁ ± measurement frequency (50 to 60 [Hz])) in the vicinity of the modulation frequency component f ₁ by the filter circuit 7. Thereafter, the signal is amplified to a predetermined voltage value by the amplifier circuit 8, and the demodulating circuit 9 performs synchronous detection processing of the detection signal, and demodulates it to the measurement target frequency component (50 to 60 [Hz]). At this time, synchronous detection is performed by f ₁ which is the frequency of the ON / OFF operation of the switching elements 4a and 4b.

Thereafter, only the measurement target frequency component (50 to 60 [Hz]) is passed through the filter circuit 12 to remove unnecessary DC offset components and high frequency components, and the high voltage generation circuit 13 amplifies the detection signal. The output of the filter circuit 12 is set to a high signal of several [V], and is amplified to a magnitude corresponding to the voltage to be measured (several tens [V] to several hundred [V]) by the high voltage generation circuit 13. . This signal is negatively fed back as a feedback voltage V _f to the transformer 6.

It will now be described with respect to the detection error of the voltage sensor (measurement voltage (feedback voltage relative to the AC voltage) V ₁ (error rate of the detected voltage) V _f).
In the form status of this, it detects the signal on the basis of the current flowing through the transformer 6. The current flowing through the transformer 6 is proportional to the potential difference between measured voltage V ₁ and the feedback voltage V _f, is the proportionality constant and alpha. Further, in this circuit, since the current flowing on the primary side of the transformer 6 (left side of the transformer 6 in FIG. 1) is converted into voltage on the secondary side of the transformer 6, the output of the demodulation circuit 9 is the current flowing in the transformer 6. Is proportional to This conversion rate (sensitivity) is β, and further, the amplification factor in the high voltage generation circuit 13 is A.

従って、フィードバック電圧Ｖ_ｆは、数式２によって表される。

At this time, the output voltage V ₂ and the feedback voltage V _f of the demodulation circuit 9 are expressed by Equation 1.

Therefore, the feedback voltage V _f is expressed by Equation 2.

Therefore, the error rate of the feedback voltage V _f with respect to the measurement voltage V ₁ is expressed by Equation 3.

The coupling capacitance C ₀ between the core wire 1a of the electric wire 1 and the electrode 2a of the detection probe 2 is a dielectric difference caused by a difference in distance between the electrodes due to a difference in the diameter of the electric wire 1 and a material of the insulating coating 1b. It varies depending on the difference in dielectric constant due to the difference in the rate and the environment such as temperature and humidity. Since the current flowing through the transformer 6 changes due to the change in the coupling capacitance C ₀ , the proportionality constant α described above changes and affects the measured value.

  Here, from Equation 3 indicating the error rate, the larger the detection signal obtained by the current detection means (transformer 6) (the larger the α), and the larger the gain of the subsequent amplifier circuit 8 (the gain) (β The larger the A or A), the smaller the error rate. Therefore, in this type of measurement apparatus, an allowable error is determined in consideration of measurement accuracy and the like, and the gain of the amplifier circuit is determined so as to correspond to the error. However, if the gain of the amplifier circuit is increased too much, the stability and noise resistance of the feedback circuit are lowered, and sufficient measurement accuracy and reliability cannot be obtained.

Therefore, in this form condition for increasing the detection signal obtained by the current detection means (detection transformer), the error rate by increasing the coupling capacitance C _0, that is, a structure to reduce the detection error.
The coupling capacitance C ₀ is proportional to the area of the electrode 2a and the dielectric constant and inversely proportional to the distance between the core wire 1a and the electrode 2a. Therefore, the electrode area and the dielectric constant are increased, and the core wire 1a and the electrode 2a It is effective to make the distance between them as short as possible. For this reason, in this embodiment, the electrode 2a which consists of a metal thin film is built in the perimeter of the insulating member 2b, the detection probe 2 is comprised, and the electric wire 1 is given by giving flexibility and a softness | flexibility as a whole. It is designed to be tightly wound on the wire. For example, a polyimide film having a thickness of 12.5 to 50 [μm] is preferably used for the insulating member 2b.

  By making the detection probe 2 as described above, the electrode 2a is disposed so as to surround the entire circumference of the core wire 1a. For example, compared with a method of disposing a plate electrode facing one side of the core wire 1a, The distance from the core wire 1a can be shortened while increasing the electrode area facing the core wire 1a, and a non-contact voltage sensor with a small detection error can be realized.

Here, FIG. 3 shows an example of an analysis result of the relationship between the coupling capacitance C ₀ and the detection error at the same amplification factor.
As shown in the embodiment, with respect to a flat plate electrode (vertical 1 [cm] × horizontal 2 [cm]) separated from the electric wire 1 having a cross-sectional area of 8 [mm ² ] to 200 [mm ² ] by a certain distance. with cylindrical contact type electrode 2a (width 2 [cm]), it is possible to increase the coupling capacitance C _0, according to FIG. 3, as the detection error larger coupling capacitance C ₀ is the same amplification factor is small I understand that

Next, FIG. 4 is a circuit configuration diagram showing the first embodiment of the present invention.
In the voltage detection circuit 3 </ b> A of this embodiment, a modulation circuit 24 including switching elements 24 a and 24 b is connected in parallel to the primary side of the transformer 6. Other configurations, the same components as FIG. 1 will not be described are denoted by the same reference numerals.

In the first embodiment, a series circuit of a resistor 25 and a primary winding of a transformer 6 is connected in parallel to the modulation circuit 24, and a connection point between the resistor 25 and one switching element 24a is connected to the electrode 2a. The connection point between the other end of the primary winding of the transformer 6 and the other switching element 24 b is connected to the feedback loop from the high voltage generation circuit 13.
The resistor 25 is, for example, several [kΩ] to several hundred [kΩ], and is sufficiently larger than the ON resistance (several [Ω] or less) of the switching elements 24a and 24b, and the OFF resistance of the switching elements 24a and 24b. Set to be sufficiently smaller than (several [MΩ] or more). Therefore, the transformer when the switching element 24a, 24b is ON, the flow switching device side current through the coupling capacitor _{C 0,} if the switching elements 24a, 24b is OFF, through the current coupling capacitance _{C 0} 6 flows through the primary side of 6 and the detection current can be modulated.

Further, since the modulation circuit 24 is connected in parallel to the primary side of the transformer 6, the parasitic capacitance of the switching elements 24a and 24b, for example, the parasitic capacitance between the gate and source of the junction FET as in the present embodiment. It is possible to prevent the signal component of the drive current flowing through the transformer 6 from flowing into the transformer 6. This prevents the signal component from becoming a noise component and reducing the sensitivity of the detection signal or deteriorating accuracy.
Therefore, according to the first embodiment, a non-contact voltage sensor capable of detecting a voltage with higher accuracy can be realized.

Next, a second embodiment of the present invention will be described. This second embodiment is provided with a voltage measuring device using a non-contact voltage sensor of the first embodiment type condition for measuring the voltage applied to the wire, a current measuring device for measuring the current flowing through the electric wire, the The present invention relates to a power measuring apparatus.

FIG. 5 is a configuration diagram of the power measuring device 30 according to the second embodiment.
The power measuring device 30 detects a current flowing through one electric wire 1B and a voltage measuring device including two detection probes 31a and 31b and a voltage detecting circuit 32 in order to measure the line voltage of the electric wires 1A and 1B. A current measuring device such as a current transformer composed of a detection probe 33 and a current detection circuit 34, and a power calculation circuit 35 that calculates power and electric energy based on outputs of the voltage detection circuit 32 and the current detection circuit 34. Is done. The calculation result by the power calculation circuit 35 is displayed on a display unit (not shown).

Detection probes 31a in this embodiment, 31b corresponds to the detection probe 2 definitive to the first embodiment type state, the voltage detection circuit 32 corresponds to the voltage detection circuits 3 A to definitive to the first embodiment form state.
FIG. 6 is a schematic configuration diagram of a non-contact voltage sensor configured by the detection probes 31 a and 31 b and the voltage detection circuit 32.

FIG. 7 shows the configuration of the voltage detection circuit 32 in FIGS. The voltage detection circuit 32 includes a first circuit portion 32a corresponding to the electric wire 1A and the detection probe 31a, and a second circuit portion 32b corresponding to the electric wire 1B and the detection probe 31b.
Here, as the first circuit portion 32a and the second circuit portion 32b, that are using the circuit according to the first embodiment shown in FIG.

In FIG. 7, by inputting the output from the voltage dividing resistor 14a of the first circuit section 32a and the output from the voltage dividing resistor 14b of the second circuit section 32b to the differential amplifier 36, the wires 1A and 1B The line voltage is measured from the voltage (potential). Here, since the first circuit unit 32a and the second circuit unit 32b use the feedback signal as a detection signal, the voltage value reaches several hundreds [V], which is the voltage to be measured.
For this reason, for example, when the differential amplifier 36 is configured by an operational amplifier or the like, the detection signal exceeds the input voltage range and cannot be measured, so that the voltage dividing resistors 14a and 14b enter the input voltage range of the differential amplifier 36. The latter process is performed by adjusting as described above.

  As shown in FIG. 5, the power measurement apparatus according to the present embodiment uses the line voltage measurement signal output from the voltage detection circuit 32 and the current measurement signal output from the current detection circuit 34 as a power calculation circuit 35. To calculate the electric power and the electric energy. According to this power measuring device, it is possible to measure the power and the amount of power using the voltage and current measured in a non-contact manner with respect to the conductive portions (core wires) of the electric wires 1A and 1B to be measured.

  In a conventional power measurement device, for voltage measurement, it is necessary to measure a voltage sensor including a detection probe in contact with a conductive part to be measured. In particular, in a power measurement device such as a power monitoring monitor, the voltage sensor is It is required to always be installed in a state of being securely fixed to the conductive part. For example, conventionally, there is a certain restriction on the installation location of the voltage sensor, for example, it is necessary to fix the voltage sensor to the breaker terminal of the distribution board.

However, in the power measuring apparatus according to the second embodiment, since the detection probe may be wound around the insulation coating of the electric wire, there are few restrictions on the installation location of the voltage sensor, and attachment is easy.
In addition, by providing the detection probe with flexibility and flexibility, it can be attached in close contact with an electric wire of any wire diameter, and power can be supplied using an AC voltage measured with high accuracy. It is possible to provide a power measuring device that measures the above.

1, 1A, 1B: Electric wire 1a: Core wire 1b: Insulation coating 2, 31a, 31b: Detection probe 2a: Electrode 2b: Insulation member 3, 3A, 32: Voltage detection circuit 4: Modulation circuits 4a, 4b, 24a, 24b: Semiconductor switching element 5: drive circuit 6: transformer 7, 10, 12: filter circuit 8: amplifier circuit 9: demodulation circuit 11: oscillation circuit 13: high voltage generation circuits 14, 14a, 14b: voltage dividing resistor 25: resistor 30: Power measurement device 32a: first circuit unit 32b: second circuit unit 33: detection probe 34: current detection circuit 35: power calculation circuit 36: differential amplifier V ₁ : AC voltage C ₀ : coupling capacitance

Claims (5)

In a non-contact voltage sensor capable of measuring an AC voltage applied to a core wire of an electric wire in a non-contact state with the core wire by using a detection probe arranged in an external measurement of an insulation coating surrounding the core wire,
The detection probe is
Comprising a electrodes you face the core wire via the insulating coating,
The detection circuit connected to the electrode is
A modulation circuit that modulates a current flowing through a coupling capacitor formed between the core wire and the electrode into a current having a frequency higher than the frequency of the AC voltage by turning on / off a semiconductor switching element;
A drive circuit for driving the semiconductor switching element;
Current detection means for detecting the current modulated by the modulation circuit;
An amplification circuit for amplifying the output of the current detection means;
A demodulation circuit for detecting an original frequency component from the output of the amplification circuit;
A voltage generation circuit for generating a voltage based on the output of the demodulation circuit;
A measurement circuit for measuring the output voltage of the voltage generation circuit as the AC voltage;
Equipped with a,
A non-contact voltage sensor , wherein the modulation circuit is connected in parallel to the current detection means . The non-contact voltage sensor according to claim 1,
The non-contact voltage sensor , wherein the semiconductor switching element is a junction FET, MOSFET, IGBT, or bipolar transistor . The non-contact voltage sensor according to claim 1 or 2,
The non-contact voltage sensor , wherein the modulation circuit is capable of passing a current bidirectionally by connecting the two semiconductor switching elements in anti-series . In the non-contact voltage sensor as described in any one of Claims 1-3,
The detection probe has a metal thin film built in an insulating member so as to be flexible as a whole, and can be mounted by winding the detection probe in close contact with the outer peripheral surface of the insulating coating. non-contact voltage sensor characterized. A voltage measuring device using the non-contact voltage sensor according to any one of claims 1 to 4 ,
A current measuring device for measuring a current flowing through the electric wire;
With
An electric power measurement device that measures electric power based on a voltage measurement signal from the voltage measurement device and a current measurement signal from the current measurement device.

Images