JP6553266B2 - Metal oxide film and semiconductor device - Google Patents

Description

One aspect of the present invention relates to a metal oxide film. Further, the present invention relates to a semiconductor device using the metal oxide film.

In this specification and the like, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics, and includes a transistor, a semiconductor circuit, a memory device, an imaging device, an electro-optical device, a power generation device (thin film solar cell, Organic thin film solar cells and the like) and electronic devices can also be referred to as semiconductor devices.

A technique for forming a transistor using a semiconductor film formed over a substrate having an insulating surface has attracted attention. The transistor is widely applied to electronic devices such as integrated circuits (ICs) and image display devices (also simply referred to as display devices). Silicon-based semiconductor materials are widely known as semiconductor films applicable to transistors, but metal oxides (oxide semiconductors) exhibiting semiconductor characteristics are attracting attention as other materials.

For example, Patent Document 1 discloses a technique for manufacturing a transistor using an amorphous oxide containing In, Zn, Ga, Sn, or the like as an oxide semiconductor.

JP, 2006-165529, A

An object of one embodiment of the present invention is to provide a metal oxide film having a novel structure.

Another object of one embodiment of the present invention is to provide a metal oxide film with high physical stability.

Alternatively, an object of one embodiment of the present invention is to provide a highly reliable semiconductor device to which the above metal oxide is applied.

Note that the descriptions of these objects do not disturb the existence of other objects. Note that one embodiment of the present invention does not have to solve all of these problems. Problems other than these will become apparent from the description, drawings, claims, etc., and the description,
Other problems can be extracted from the description of the drawings, claims, and the like.

One embodiment of the present invention is a first layer in which In atoms are periodically arrayed, and a second layer in which Ga atoms or Zn atoms are periodically arrayed in a cross-sectional observation image. , And a first region having n second layers (n is a natural number) between the pair of first layers;
It is a metal oxide film having a second region having an m (m is a natural number other than n) layer as a second layer between another pair of first layers.

In the metal oxide film, the first region and the second region are vertically adjacent to a plane parallel to the first layer, and the boundary between the first region and the second region In the one said first
It is preferable to share the layer of

Alternatively, the first region and the second region are adjacent in a direction parallel to the plane parallel to the first layer, and one first region is formed at the boundary between the first region and the second region. It is preferred that the layers of

In the first region or the second region of the metal oxide film, the first layer is preferably parallel to the formation surface.

In addition, it is preferable that no grain boundary is observed between the first region and the second region in the metal oxide film.

One embodiment of the present invention is a source electrically connected to any of the above metal oxide films, a gate electrode, a gate insulating layer between the metal oxide film and the gate electrode, and the metal oxide film. A semiconductor device having an electrode and a drain electrode and having a channel formed in a metal oxide film.

In the present specification and the like, that the A-plane is parallel to the B-plane means a state in which the angle between the normal to the A-plane and the normal to the B-plane is -20 ° or more and 20 ° or less. Further, in the present specification and the like, the fact that the C-plane is perpendicular to the B-plane refers to a state in which the angle between the normal to the C-plane and the normal to the B-plane is 70 ° to 110 °. Further, in the present specification and the like, that the C-line is substantially perpendicular to the B-plane refers to a state in which the angle between the C-line and the normal to the B-plane is -20 ° or more and 20 ° or less.

According to the present invention, a metal oxide film having a novel structure can be provided. Alternatively, a metal oxide film with high physical properties can be provided. Alternatively, a highly reliable semiconductor device to which the above metal oxide is applied can be provided.

FIG. 6 illustrates a metal oxide film according to an embodiment. FIG. 6 illustrates a metal oxide film according to an embodiment. 4A and 4B each illustrate a crystal structure of a metal oxide according to Embodiment. 6A and 6B illustrate a crystal structure included in a metal oxide film according to an embodiment. 5A to 5C illustrate a structural example of a transistor according to an embodiment. 10A to 10D illustrate an example of a method for manufacturing a transistor according to an embodiment. 5A to 5C illustrate a structural example of a transistor according to an embodiment. 5A to 5C illustrate a structure of a display panel according to an embodiment. 8A and 8B each illustrate a block diagram of an electronic device according to an embodiment. 5A and 5B illustrate an external view of an electronic device according to an embodiment.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it can be easily understood by those skilled in the art that various changes can be made in the form and details without departing from the spirit and the scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated. In addition, in the case where the same function is indicated, the hatch pattern is the same, and there is a case where no reference numeral is given.

Note that in each drawing described in this specification, the size of each component, the thickness of a layer, or a region is
May be exaggerated for clarity. Therefore, it is not necessarily limited to the scale.

Embodiment 1
In this embodiment mode, a metal oxide film of one embodiment of the present invention will be described with reference to the drawings.

[Crystal structure of metal oxide film]
The metal oxide film of one embodiment of the present invention includes a metal oxide containing two or more different metal elements. Further, as the metal oxide, an oxide whose crystal structure can take a layered structure, and an oxide which can express different periodic structure due to a difference in composition can be used.

The various periodic structures that develop due to differences in composition are also called homologous phases. For example, when a crystal structure has a layered structure in which an A layer containing metal A and a B layer containing metal B are arranged in layers, the number of B layers sandwiched between a pair of A layers depends on the composition. It changes continuously. As a result, different periodic structures are realized depending on the composition. In the present specification and the like, a structure that can have a different periodic structure due to a difference in composition as described above is referred to as a homologous structure.

For example, an In—Ga—Zn-based oxide can have a homologous structure represented by InGaO ₃ (ZnO) _m (m is a natural number). FIG. 3 shows an example of a crystal structure of an In—Ga—Zn-based oxide. The crystal structure illustrated in FIG. 3A is a crystal structure represented by InGaO_ ₃ (ZnO) _m (m = 1). The crystal structure illustrated in FIG. 3B is InGaO_ ₃ (ZnO) _m
This is a crystal structure represented by (m = 2). In addition, the crystal structure illustrated in FIG.
It is a crystal structure represented by O_ ₃ (ZnO) _m (m = 3).

The metal oxide film of one embodiment of the present invention is characterized in that regions having different crystal structures (periodic structures) are mixed in the film.

As for example, a metal oxide, an In-Ga-Zn-based in the case where oxide was used, a layer made of InO ₂ (both InO ₂ layers denoted), Ga and a layer of an oxide of Zn ((Ga, Zn
2) (also referred to as O layer) has a layered structure in which the two layers are arranged in layers.

Furthermore, the number of (Ga, Zn) O layers sandwiched between a pair of InO ₂ layers can take various values. For example, in the structure shown in FIG. 4A, one layer of (Ga, Zn) is formed between a pair of InO ₂ layers.
) It has an O layer. The structure shown in FIG. 4 (B), the two layers between a pair of InO _two layers (Ga
, Zn) O layer (also referred to as a (Ga, Zn) ₂ O ₂ layer). The structure illustrated in FIG. 4C includes three (Ga, Zn) O layers (also referred to as (Ga, Zn) ₃ O ₃ layers) between a pair of InO ₂ layers.

As described above, when an In—Ga—Zn-based oxide is used as the metal oxide film of one embodiment of the present invention, the metal oxide film exists between the pair of InO ₂ layers in the metal oxide film (Ga, Two or more crystal regions having different numbers of Zn) O layers are included.

The crystal region included in the metal oxide is, for example, a transmission electron microscope (TEM: Transmi).
(Section Electron Microscopy). Moreover, the crystal structure can be specified by further analyzing the crystal region observed by TEM using a technique such as electron beam diffraction.

Here, as a cross-sectional observation of the metal oxide film, for example, a scanning transmission electron microscope (STEM: S
canning Transmission Electron Microscopy
Therefore, when high-resolution observation is performed, it is difficult to observe oxygen atoms, which are light elements, and only the arrangement of metal atoms can be confirmed.

  Next, FIG. 1 shows a cross-sectional observation image of the metal oxide film of one embodiment of the present invention.

Here, as an example of the metal oxide film, a sample in which an In—Ga—Zn-based oxide film was formed to a thickness of about 50 nm on a quartz glass substrate was used. The deposition conditions for the metal oxide film shown in FIG.
: Ga: Zn = 1: 1: 1 (atomic ratio) by sputtering using an oxide target, under an oxygen atmosphere (flow rate 45 sccm), pressure 0.4 Pa, direct current (DC) power supply power 0.5 kW, The substrate temperature at the time of film formation was set to room temperature. Furthermore, the temperature is 650.degree.
Heat treatment for time was performed. Further, the metal oxide film after the heat treatment was thinned by an ion milling method to prepare a sample for cross-sectional observation.

Cross-sectional observation was performed using a transmission electron microscope (HD-2700 manufactured by Hitachi High-Technologies Corporation) at an acceleration voltage of 200 kV and a magnification of 12,000,000 times, HAADF-STEM (High-Angle)
Annual Dark-Field Scanning Transmissio
n Electron Microscopy image was observed.

As shown in FIG. 1, in the metal oxide film, a layer in which atoms (specifically, electrons) observed with high luminance are periodically arranged, and atoms observed with low luminance are arranged periodically. Multiple layers are observed. Here, the atom observed with high luminance is an In atom, and the atom observed with low luminance is a Ga atom or a Zn atom.

The figure which expanded the area | region 1 enclosed with the broken line in FIG. 1 (A) is shown in FIG. 1 (B). It can be confirmed that there are two layers in which Ga atoms or Zn atoms are periodically arranged between a pair of In atoms periodically arranged.

Here, as described above, since it is difficult to directly observe the O atoms constituting the metal oxide in the cross-sectional observation image, the composition of the O atoms and the bonding state between the O atoms and the metal atoms are It is difficult to know. Therefore, in the following, a layer of periodically arranged atoms (specifically, electrons) obtained by a cross-sectional observation image is distinguished from a layer such as an InO ₂ layer or a (Ga, Zn) O layer in an actual crystal structure. It shall be written.

Specifically, in the cross-sectional observation image, one layer in which a pair of In atoms is periodically arranged is referred to as an In layer or a first layer. In the cross-sectional observation image, Ga atoms or Zn
One layer in which atoms are periodically arranged is referred to as a (Ga, Zn) layer or a second layer.

In addition, in the case of using a metal oxide other than the In-Ga-Zn-based oxide, an atom having the highest luminance (the luminance is equal among the plurality of periodically arranged layers observed in the cross-sectional observation image) First layer, second layer, third layer, in order from the one containing the highest atomic number).
It shall be written as a layer of

Next, FIG. 1C shows an enlarged view of the region 2 surrounded by a broken line in FIG. It can be confirmed that there are three (Ga, Zn) layers between the pair of In layers.

As described above, the metal oxide film of one embodiment of the present invention includes a pair of first oxide films in a cross-sectional observation image.
Of the first region having the second layer between n layers (n is a natural number) and the second layer between the other pair of first layers m (m is a natural number other than n) It is characterized in that it has a mixed second region.

The type of crystal structure in the crystal region included in the metal oxide film is not limited to two, and three or more crystal regions having crystal structures of different types may be included.

Further, in FIG. 1A, it can be confirmed that the regions 1 and 2 are stacked in the direction perpendicular to the direction parallel to the In layer. Further, focusing on the boundary between region 1 and region 2, one In
It can be confirmed that the layers are shared.

By thus stacking the regions having different crystal structures and providing two regions so as to share one In layer, no grain boundary is generated between these regions, and high structural stability is realized. Has been. Furthermore, defects in the metal oxide film due to the presence of grain boundaries can be reduced.

Furthermore, as shown in FIG. 1, in the upper layer of the region 1, as in the region 2, there is a region in which three (Ga, Zn) layers exist between a pair of In layers, and Even one In
It can be confirmed that the layers are shared.

Thus, a plurality of regions having different crystal structures may be stacked while sharing the In layer. As a result, structural stability can be obtained over a wide range in the metal oxide film,
A metal oxide film with reduced defects can be realized.

  FIG. 2 is a cross-sectional observation image of another part of the sample.

In the cross-sectional observation image shown in FIG. 2, a region 3 in which two (Ga, Zn) layers exist between a pair of In layers, and three (Ga, Zn) layers between another pair of In layers. The region 4 where the layer exists is mixed. The regions 3 and 4 are adjacent to each other in a direction parallel to the plane parallel to the In layer.

Further, in FIG. 2, one In layer constituting region 3 extends to region 4 and I in region 4
It constitutes a part of n layer. That is, one In layer is continuously present in the region 3 and the region 4.

As described above, since the In layers are continuously present between different regions with different crystal structures, grain boundaries do not occur between these regions, and high structural stability is realized. Yes.
Furthermore, defects in the metal oxide film due to the presence of grain boundaries can be reduced.

The metal oxide film of one embodiment of the present invention is a metal oxide film in which high structural stability is realized.
By applying such a metal oxide film to a semiconductor layer in which a channel of a transistor is formed, a highly reliable transistor can be realized.

Furthermore, the metal oxide film according to one embodiment of the present invention is a metal oxide film in which defects in the film are reduced because crystal regions continuously exist and grain boundaries do not exist between the regions. . By applying such a metal oxide film to the semiconductor layer of the transistor, trapping of carriers due to defects is suppressed, high field-effect mobility can be realized, and a transistor whose variation in electrical characteristics is suppressed can be realized. Can do.

Note that an example of a structure of a transistor to which the metal oxide film of one embodiment of the present invention is applied will be described later.

[Method of forming metal oxide film]
The method of forming the metal oxide film of this embodiment will be described below.

The metal oxide film of this embodiment can be formed by a sputtering method in an atmosphere containing oxygen and then subjected to heat treatment. By setting the film formation atmosphere to an atmosphere containing oxygen, oxygen vacancies in the metal oxide film can be reduced, and a film including a crystal region can be obtained by heat treatment performed later.

By reducing oxygen vacancies in the metal oxide film of this embodiment, a film with stable physical properties can be obtained. In particular, in the case of manufacturing a semiconductor device by applying a metal oxide film (oxide semiconductor film) exhibiting semiconductor characteristics as the metal oxide film of this embodiment, oxygen vacancies in the oxide semiconductor film are the same as in the semiconductor device. It becomes a variable factor of electrical characteristics. Thus, a semiconductor device with high reliability can be obtained by manufacturing a semiconductor device using an oxide semiconductor film in which oxygen vacancies are reduced.

Note that in the metal oxide film of this embodiment, it is preferable to increase the oxygen partial pressure in the film formation atmosphere because oxygen vacancies can be further reduced. More specifically, the partial pressure of oxygen in the deposition atmosphere is preferably 33% or more.

The target used for the sputtering method is not limited to the In—Ga—Zn-based oxide, and a multi-component metal oxide that can have a homologous structure can be used. For example, In-M
A Zn-based oxide (M is Al, Ti, Ga, Y, Zr, La, Ce, Nd, Hf, or the like) can be used.

In addition, the composition of the metal oxide contained in the target used for the sputtering method is not particularly limited as long as the composition can have a homologous structure. For example, in the case of an In—Ga—Zn-based oxide, when the composition of Ga is larger than Zn, it is easy to obtain a spinel structure instead of a layered structure, and therefore, the content of Zn is preferably larger than Ga. In addition, Zn sublimates during film formation by a sputtering method, and the composition of Zn in the formed metal oxide film may be lowered. Therefore, the Zn composition is higher than the desired metal oxide film composition. It is preferable to use a high target of

Further, when the metal oxide film is formed by a sputtering method, the film formation surface may be formed at room temperature without being heated, or may be heated. When heating, for example, 150 ° C or more, 3
What is necessary is just to be 00 degreeC or more, 450 degreeC or more.

After forming the metal oxide film, heat treatment is performed. A crystal region is formed in the metal oxide film by rearranging the atoms in the film by the heat treatment.

At this time, since the degree of dynamic freedom is relatively high in the vicinity of the film surface, rearrangement of atoms in the vicinity of the film surface first occurs in the initial stage, and a layer substantially parallel to the film surface is formed in the vicinity of the film surface. The Thereafter, while crystallization proceeds in the depth direction from the film surface, a crystal region having a laminated structure in which a plurality of layers substantially parallel to the film surface are laminated is formed. That is, the first layer and the second layer included in the crystalline region are arranged in a direction parallel to the film surface.

Here, in the metal oxide film before the heat treatment, a distribution occurs in the metal element concentration. And
During rearrangement of atoms during heat treatment, it is considered that in a region where the concentration of In atoms in the film is relatively high, a region with a small number of (Ga, Zn) layers existing between a pair of In layers is formed It is done. On the other hand, in a region where the concentration of In atoms in the film is relatively low, it exists between a pair of In layers (Ga, Zn
) A region with a large number of layers is formed. As a result, a metal oxide film having regions having different crystal structures in the film can be formed. Note that such a formation process is In-Ga-Zn.
The same applies to multicomponent metal oxides which can have a homologous structure other than the base oxide.

For example, a metal oxide film having regions with different metal element concentrations can be formed by forming a film at room temperature or a temperature equal to or lower than room temperature without heating a formation surface at the time of film formation.

The heat treatment is performed at 550 ° C. or higher, preferably 600 ° C. or higher, more preferably 650 ° C. or higher. For example, heat treatment may be performed at 650 ° C. for 1 hour. The higher the temperature of the heat treatment and the longer the time, the larger the proportion of crystal regions contained in the metal oxide film.

The heat treatment can be performed, for example, under a nitrogen atmosphere or under a reduced pressure atmosphere. By performing the heat treatment in such an atmosphere, hydrogen in the metal oxide film can be effectively desorbed. In addition, oxygen in the metal oxide film may be desorbed during the heat treatment,
Subsequently, it is preferable to further perform heat treatment in an oxygen atmosphere to reduce oxygen vacancies in the film.

  As described above, the metal oxide film of one embodiment of the present invention can be formed.

This embodiment can be implemented in appropriate combination with the other embodiments described in this specification.

Second Embodiment
In this embodiment, a semiconductor device to which a metal oxide film (oxide semiconductor film) which is a metal oxide film of one embodiment of the present invention and exhibits semiconductor characteristics is described with reference to the drawings. Here, a structural example of a transistor is described as an example of a semiconductor device.

[Example of transistor structure]
FIG. 5A is a schematic cross-sectional view of the transistor 100 described below. The transistor 100 illustrated in this structural example is a bottom gate transistor.

The transistor 100 includes a gate electrode 102 provided over the substrate 101, an insulating layer 103 provided over the substrate 101 and the gate electrode 102, and a gate electrode 102 over the insulating layer 103.
And the pair of electrodes 105 a and 105 b in contact with the top surface of the oxide semiconductor layer 104, and the insulating layer 103 and the oxide semiconductor layer 10.
4. An insulating layer 106 covering the pair of electrodes 105a and 105b, and an insulating layer 10 on the insulating layer 106
7 is provided.

The oxide semiconductor film of one embodiment of the present invention can be applied to the oxide semiconductor layer 104 of the transistor 100.

[Substrate 101]
The material of the substrate 101 and the like are not particularly limited, but at least a material having heat resistance enough to withstand the subsequent heat treatment is used. For example, a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, a YSZ (yttria stabilized zirconia) substrate, or the like may be used as the substrate 101. Alternatively, a single crystal semiconductor substrate such as silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used.

Alternatively, a substrate in which a semiconductor element is provided over a semiconductor substrate or an SOI substrate may be used as the substrate 101. In that case, the transistor 100 is formed over the substrate 101 with the interlayer insulating layer interposed therebetween. At this time, at least one of the gate electrode 102, the electrode 105a, and the electrode 105b of the transistor 100 may be electrically connected to the semiconductor element through the connection electrode embedded in the interlayer insulating layer. A transistor 10 on a semiconductor element through an interlayer insulating layer
By providing 0, an increase in area due to the addition of the transistor 100 can be suppressed.

Alternatively, a flexible substrate such as plastic may be used as the substrate 101, and the transistor 100 may be formed directly on the flexible substrate. Alternatively, a separation layer may be provided between the substrate 101 and the transistor 100. The peeling layer can be used for forming a part or all of the transistor over the upper layer, separating the transistor from the substrate 101, and transferring it to another substrate. As a result, the transistor 100 can be transferred to a substrate having poor heat resistance or a flexible substrate.

[Gate electrode 102]
The gate electrode 102 may be formed using a metal selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten, an alloy containing any of the above metals, or an alloy combining any of the above metals. it can. In addition, a metal selected from one or more of manganese and zirconium may be used. The gate electrode 102 may have a single-layer structure or a stacked structure of two or more layers. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which a titanium film is stacked on an aluminum film, a two-layer structure in which a titanium film is stacked on a titanium nitride film, and a two-layer structure in which a tungsten film is stacked on a titanium nitride film Layer structure, two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a titanium film, and
There is a three-layer structure or the like in which an aluminum film is laminated on the titanium film and a titanium film is further formed thereon. Alternatively, an alloy film in which one or a plurality of metals selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium are combined with aluminum, or a nitride film thereof may be used.

The gate electrode 102 includes indium tin oxide, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide including titanium oxide, and indium zinc oxide. Alternatively, a light-transmitting conductive material such as indium tin oxide to which silicon oxide is added can be used. Alternatively, a stacked structure of the above light-transmitting conductive material and the above metal can be used.

In addition, an In—Ga—Zn-based oxynitride semiconductor film, an In—Sn-based oxynitride semiconductor film, an In—Ga-based oxynitride semiconductor film, and an In—Zn-based film are formed between the gate electrode 102 and the insulating layer 103. Oxynitride semiconductor film, Sn-based oxynitride semiconductor film, In-based oxynitride semiconductor film, metal nitride film (InN
, ZnN etc.) may be provided. These films have a work function of 5 eV, preferably 5.5 eV or more, and have a value larger than the electron affinity of the oxide semiconductor, and thus shift the threshold voltage of the transistor including the oxide semiconductor to a positive value. Thus, a switching element having a so-called normally-off characteristic can be realized. For example, in the case of using an In-Ga-Zn-based oxynitride semiconductor film, an In-Ga-Zn-based oxynitride semiconductor film having a nitrogen concentration higher than that of the oxide semiconductor layer 104, specifically, 7 atomic% or more is used. .

[Insulating layer 103]
The insulating layer 103 functions as a gate insulating film.

For the insulating layer 103, for example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, hafnium oxide, gallium oxide, a Ga—Zn-based metal oxide, silicon nitride, or the like may be used. Provide.

As the insulating layer 103, hafnium silicate (HfSiO _x ), hafnium silicate added with nitrogen (HfSi _x O _y N _z ), hafnium aluminate added with nitrogen (HfAl _x O _y N _z ), hafnium oxide, By using a high-k material such as yttrium oxide, gate leakage of the transistor can be reduced.

[A pair of electrodes 105a, 105b]
The pair of electrodes 105a and 105b functions as a source electrode or a drain electrode of the transistor.

The pair of electrodes 105a and 105b are made of aluminum, titanium, chromium, or the like as a conductive material.
A single metal made of nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or an alloy containing this as a main component can be used as a single-layer structure or a laminated structure. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which a titanium film is stacked on an aluminum film, a two-layer structure in which a titanium film is stacked on a tungsten film, a copper film on a copper-magnesium-aluminum alloy film A two-layer structure to be stacked, a three-layer structure in which an aluminum film or a copper film is stacked on the titanium film or titanium nitride film and the titanium film or titanium nitride film and further a titanium film or a titanium nitride film is formed thereon There is a three-layer structure in which a molybdenum film or a molybdenum nitride film and an aluminum film or a copper film are stacked over the molybdenum film or the molybdenum nitride film and a molybdenum film or a molybdenum nitride film is further formed thereon. Note that a transparent conductive material containing indium oxide, tin oxide, or zinc oxide may be used.

[Insulating layers 106 and 107]
The insulating layer 106 is preferably formed using an oxide insulating film containing more oxygen than that in the stoichiometric composition. Part of oxygen is released by heating from the oxide insulating film containing oxygen in excess of the stoichiometric composition. An oxide insulating film containing more oxygen than that in the stoichiometric composition is formed by temperature-programmed desorption gas spectroscopy (TDS).
In ion spectroscopic analysis, the amount of released oxygen in terms of oxygen atoms is 1
. 0 × 10 ¹⁸ atoms / cm ³ or more, preferably 3.0 × 10 ²⁰ atoms / cm
It is an oxide insulating film which is ³ or more.

For example, as the insulating layer 106, silicon oxide, silicon oxynitride, or the like can be used.

Note that the insulating layer 106 is the oxide semiconductor layer 1 when the insulating layer 107 to be formed later is formed.
It also functions as a film for alleviating damage to 04.

Further, an oxide film which transmits oxygen may be provided between the insulating layer 106 and the oxide semiconductor layer 104.

As an oxide film which transmits oxygen, silicon oxide, silicon oxynitride, or the like can be used. Note that in this specification, a silicon oxynitride film refers to a film having a higher oxygen content than nitrogen as its composition, and a silicon nitride oxide film has a nitrogen content more than oxygen as its composition Refers to a membrane with many

As the insulating layer 107, an insulating film having a blocking effect of oxygen, hydrogen, water, or the like can be used. With the insulating layer 107 provided over the insulating layer 106, diffusion of oxygen from the oxide semiconductor layer 104 to the outside and entry of hydrogen, water, or the like to the oxide semiconductor layer 104 from the outside can be prevented. As an insulating film having a blocking effect of oxygen, hydrogen, water, etc., silicon nitride,
There are silicon nitride oxide, aluminum oxide, aluminum oxide nitride, gallium oxide, gallium oxide nitride, yttrium oxide, yttrium oxide nitride, hafnium oxide, hafnium oxide nitride, and the like.

[Example of manufacturing method of transistor]
Subsequently, an example of a method for manufacturing the transistor 100 illustrated in FIG. 5A will be described.

First, as shown in FIG. 6A, the gate electrode 102 is formed over the substrate 101, and the insulating layer 103 is formed over the gate electrode 102.

  Here, a glass substrate is used as the substrate 101.

[Formation of gate electrode]
The formation method of the gate electrode 102 is shown below. First, sputtering method, CVD method,
A conductive film is formed by evaporation or the like, and a resist mask is formed over the conductive film by a photolithography step using a first photomask. Next, part of the conductive film is etched using the resist mask, so that the gate electrode 102 is formed. Thereafter, the resist mask is removed.

Note that the gate electrode 102 may be formed by an electrolytic plating method, a printing method, an inkjet method, or the like instead of the above formation method.

[Formation of gate insulating layer]
The insulating layer 103 is formed by a sputtering method, a CVD method, an evaporation method, or the like.

In the case of forming a silicon oxide film, a silicon oxynitride film, or a silicon nitride oxide film as the insulating layer 103, a deposition gas containing silicon and an oxidizing gas are preferably used as a source gas. Typical examples of the deposition gas containing silicon include silane, disilane, trisilane, fluorosilane and the like. Examples of the oxidizing gas include oxygen, ozone, dinitrogen monoxide, and nitrogen dioxide.

In the case of forming a silicon nitride film as the insulating layer 103, it is preferable to use a two-step forming method. First, a first silicon nitride film with few defects is formed by plasma CVD using a mixed gas of silane, nitrogen, and ammonia as a source gas. next,
The source gas is switched to a mixed gas of silane and nitrogen to form a second silicon nitride film having a low hydrogen concentration and capable of blocking hydrogen. By such a formation method, a silicon nitride film with few defects and hydrogen blocking can be formed as the insulating layer 103.

When a gallium oxide film is formed as the insulating layer 103, MOCVD (Metal
It can be formed using an Organic Chemical Vapor Deposition) method.

[Formation of Oxide Semiconductor Layer]
Next, as illustrated in FIG. 6B, the oxide semiconductor layer 104 is formed over the insulating layer 103.

The method for forming the oxide semiconductor layer 104 is described below. First, the oxide semiconductor film is formed by the method illustrated in Embodiment 1. Then, a resist mask is formed over the oxide semiconductor film by a photolithography step using a second photomask. Next, part of the oxide semiconductor film is etched using the resist mask to form the oxide semiconductor layer 104. Thereafter, the resist mask is removed.

Note that the heat treatment described in Embodiment 1 may be performed immediately after the oxide semiconductor film is formed or may be performed after part of the oxide semiconductor film is etched.

Here, the oxide semiconductor has a large energy gap of 3.0 eV or more, and is a transistor including an oxide semiconductor film obtained by processing the oxide semiconductor under appropriate conditions and sufficiently reducing the carrier density of the oxide semiconductor. In the transistor, the leakage current (off current) between the source and the drain in the off state can be made extremely low compared to the conventional transistor using silicon.

When the oxide semiconductor film contains a large amount of hydrogen, part of the hydrogen serves as a donor by bonding with the oxide semiconductor, and an electron which is a carrier is generated. Thus, the threshold voltage of the transistor is shifted in the negative direction. Therefore, after the oxide semiconductor film is formed, dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or moisture from the oxide semiconductor film so that impurities are contained as little as possible. preferable.

Note that oxygen may also be reduced from the oxide semiconductor film at the same time due to dehydration treatment (dehydrogenation treatment) of the oxide semiconductor film. Therefore, it is preferable that oxygen which is simultaneously reduced by dehydration treatment (dehydrogenation treatment) to the oxide semiconductor film be added to the oxide semiconductor, or that oxygen be supplied to compensate for oxygen vacancies in the oxide semiconductor film. . In this specification and the like, the case where oxygen is supplied to the oxide semiconductor film may be referred to as oxygenation treatment.

As described above, the oxide semiconductor film is made i-type (intrinsic) or i-type by removing hydrogen or moisture by dehydration treatment (dehydrogenation treatment) and filling oxygen vacancies by oxygenation treatment. An oxide semiconductor film that is substantially i-type (intrinsic) can be obtained.
Note that substantially intrinsic means that the number of carriers derived from a donor in the oxide semiconductor film is extremely small (near zero), and the carrier density is 1 × 10 ¹⁷ / cm ³ or less, 1 × 10 ¹⁶ / cm ³ or less, It means 1 × 10 ¹⁵ / cm ³ or less, 1 × 10 ¹⁴ / cm ³ or less, and 1 × 10 ¹³ / cm ³ or less.

Further, as described above, the transistor including the i-type or substantially i-type oxide semiconductor film can achieve extremely excellent off-state current characteristics. For example, the drain current per channel width 1 μm when the transistor including the oxide semiconductor film is off is 1 × 10 ⁻¹⁸ A or less, preferably 1 × 10 ⁻²¹ A or less at room temperature (about 25 ° C.) , More preferably 1 × 10
^-24 A or less, or 85 ° C. at 1 × ^{10 -15} A or less, preferably 1 × ^{10 -18} A or less, more preferably to less 1 × ^{10 -21} A. Note that an off state of a transistor means a state where a gate voltage is sufficiently lower than a threshold voltage in the case of an n-channel transistor. Specifically, when the gate voltage is 1 V or higher, 2 V or higher, or 3 V or lower than the threshold voltage, the transistor is turned off.

[Formation of a pair of electrodes]
Next, as shown in FIG. 6C, the pair of electrodes 105a and 105b are formed.

The method for forming the pair of electrodes 105a and 105b is described below. First, a conductive film is formed by a sputtering method, a CVD method, an evaporation method, or the like. Next, a resist mask is formed over the conductive film by a photolithography process using a third photomask. Next, part of the conductive film is etched using the resist mask to form the pair of electrodes 105a and 105b. Thereafter, the resist mask is removed.

Note that as illustrated in FIG. 6C, part of the upper portion of the oxide semiconductor layer 104 may be etched and thinned at the time of etching of the conductive film. Therefore, when the oxide semiconductor layer 104 is formed, the thickness of the oxide semiconductor film is preferably set to be thick in advance.

[Formation of Insulating Layer]
Next, as illustrated in FIG. 6D, the oxide semiconductor layer 104 and the pair of electrodes 105 a and 10 are formed.
An insulating layer 106 is formed on 5b, and then an insulating layer 107 is formed on the insulating layer 106.

In the case where a silicon oxide film or a silicon oxynitride film is formed as the insulating layer 106, a deposition gas containing silicon and an oxidizing gas are preferably used as a source gas. Typical examples of the deposition gas containing silicon include silane, disilane, trisilane, fluorosilane and the like. Examples of the oxidizing gas include oxygen, ozone, dinitrogen monoxide, and nitrogen dioxide.

For example, the substrate placed in the evacuated processing chamber of the plasma CVD apparatus is maintained at 180 ° C. or more and 260 ° C. or less, more preferably 200 ° C. or more and 240 ° C. or less, and source gas is introduced into the processing chamber pressure 100Pa or more 250Pa or less in, more preferably not more than 200Pa than 100Pa, the electrode provided in the processing chamber 0.17 W / cm ² or more 0.5 W / cm ² or less, more preferably 0.25 W / cm ² or more 0 .35 W / cm ²
A silicon oxide film or a silicon oxynitride film is formed under the following conditions for supplying high frequency power.

By supplying the RF power of the above power density in the reaction chamber at the above pressure as the film forming condition, the decomposition efficiency of the source gas in the plasma is enhanced, the oxygen radicals are increased, and the oxidation of the source gas proceeds. The oxygen content in the insulating film is higher than the stoichiometric ratio. However, when the substrate temperature is the above temperature, the bonding force between silicon and oxygen is weak, so that part of oxygen is released by heating. As a result, an oxide insulating film which contains oxygen at a higher proportion than the stoichiometric composition and from which part of oxygen is released by heating can be formed.

In the case where an oxide insulating film is provided between the oxide semiconductor layer 104 and the insulating layer 106, the oxide insulating film serves as a protective film of the oxide semiconductor layer 104 in the step of forming the insulating layer 106. As a result, the insulating layer 106 can be formed using high-frequency power with high power density while reducing damage to the oxide semiconductor layer 104.

For example, the substrate placed in the evacuated processing chamber of the plasma CVD apparatus is maintained at 180 ° C. or more and 400 ° C. or less, more preferably 200 ° C. or more and 370 ° C. or less. Pressure in the range from 20 Pa to 250 Pa, more preferably 1
A silicon oxide film or a silicon oxynitride film can be formed as the oxide insulating film under the condition of supplying high-frequency power to an electrode provided in the treatment chamber at a pressure of 00 Pa to 250 Pa. In addition, when the pressure of the treatment chamber is 100 Pa to 250 Pa, damage to the oxide semiconductor layer 104 can be reduced when the oxide insulating layer is formed.

As the source gas for the oxide insulating film, a deposition gas containing silicon and an oxidation gas are preferably used. Typical examples of the deposition gas containing silicon include silane, disilane, trisilane, and fluorinated silane. Examples of the oxidizing gas include oxygen, ozone, dinitrogen monoxide, and nitrogen dioxide.

  The insulating layer 107 can be formed by a sputtering method, a CVD method, or the like.

In the case of forming a silicon nitride film or a silicon nitride oxide film as the insulating layer 107, as a source gas, a deposition gas containing silicon, an oxidizing gas, and a gas containing nitrogen are preferably used. Typical examples of the deposition gas containing silicon include silane, disilane, trisilane, fluorosilane and the like. Examples of the oxidizing gas include oxygen, ozone, dinitrogen monoxide, and nitrogen dioxide. Examples of the gas containing nitrogen include nitrogen and ammonia.

After the formation of the insulating layer 106 and the insulating layer 107, heat treatment is preferably performed. Oxygen released from the insulating layer 106 by the heat treatment is supplied to the oxide semiconductor layer 104, so that the oxide semiconductor layer 1
The oxygen deficiency in 04 can be reduced.

  Through the above steps, the transistor 100 can be formed.

[Modification of Transistor 100]
Hereinafter, a structural example of a transistor which is partially different from the transistor 100 will be described.

[Modification 1]
FIG. 5B is a schematic cross-sectional view of the transistor 110 exemplified below. The transistor 110 is different from the transistor 100 in that the structure of the oxide semiconductor layer is different.

The oxide semiconductor layer 114 included in the transistor 110 is formed by stacking the oxide semiconductor layer 114 a and the oxide semiconductor layer 114 b.

Note that the boundary between the oxide semiconductor layer 114 a and the oxide semiconductor layer 114 b may be unclear; therefore, in the drawings such as FIG. 5B and the like, the boundary is indicated by a broken line.

The oxide semiconductor film of one embodiment of the present invention can be applied to one or both of the oxide semiconductor layer 114 a and the oxide semiconductor layer 114 b.

For example, the oxide semiconductor layer 114a typically includes an In—Ga oxide, an In—Zn oxide, and an In—M—Zn oxide (M is Al, Ti, Ga, Y, Zr, La, Ce, Nd Or Hf) is used. In addition, when the oxide semiconductor layer 114a is an In-M-Zn oxide, I
The atomic ratio of n and M is preferably such that In is less than 50 atomic% and M is 50 atoms.
ic% or more, more preferably, In is less than 25 atomic%, and M is 75 atomic.
% Or more. For example, the oxide semiconductor layer 114a is formed using a material having an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more.

For example, the oxide semiconductor layer 114 b contains In or Ga, typically, In—Ga.
Oxide, In-Zn oxide, In-M-Zn oxide (M is Al, Ti, Ga, Y, Zr,
La, Ce, Nd, or Hf), and the energy at the lower end of the conduction band is closer to the vacuum level than the oxide semiconductor layer 114a, and typically, the energy at the lower end of the conduction band of the oxide semiconductor layer 114b The energy of the lower end of the conduction band of the oxide semiconductor layer 114a is 0.05
It is preferable to set eV or more, 0.07 eV or more, 0.1 eV or more, or 0.15 eV or more, and 2 eV or less, 1 eV or less, 0.5 eV or less, or 0.4 eV or less.

For example, when the oxide semiconductor layer 114 b is an In—M—Zn oxide, the atomic ratio of In to M is preferably 25 atomic% or more of In and less than 75 atomic% of M, more preferably In 34 atomic% or more and M less than 66 atomic%.

As the oxide semiconductor layer 114a, for example, In: Ga: Zn = 1: 1: 1 or 3: 1:
An In-Ga-Zn oxide having an atomic ratio of 2 can be used. In addition, the oxide semiconductor layer 1
For example, In-Ga-Zn oxide having an atomic ratio of In: Ga: Zn = 1: 3: 4, 1: 3: 6, 1: 6: 8, or 1: 6: 10 may be used as 14b. it can. Note that the atomic ratio of the oxide semiconductor layer 114 a and the oxide semiconductor layer 114 b each includes a variation of plus or minus 20% of the atomic ratio described above as an error.

By using an oxide with a higher content of Ga which functions as a stabilizer as compared to the oxide semiconductor layer 114 a in the oxide semiconductor layer 114 b provided in the upper layer, the oxide semiconductor layer 1 can be formed.
The release of oxygen from the oxide semiconductor layer 114b and the oxide semiconductor layer 114b can be suppressed.

Note that the composition is not limited to those described above, and a composition having an appropriate composition may be used depending on the semiconductor characteristics and electrical characteristics (field effect mobility, threshold voltage, variation, and the like) of the required transistor. In addition, in order to obtain semiconductor characteristics of a required transistor, carrier density or impurity concentration of the oxide semiconductor layer 114a or the oxide semiconductor layer 114b, defect density, atomic ratio of metal element to oxygen,
It is preferable to make the interatomic distance, the density, etc. appropriate.

Note that although a structure in which two oxide semiconductor layers are stacked is illustrated as the oxide semiconductor layer 114 in the above, a structure in which three or more oxide semiconductor layers are stacked may be used.

[Modification 2]
FIG. 5C shows a schematic cross-sectional view of the transistor 120 exemplified below. The transistor 120 is different from the transistor 100 and the transistor 1 in that the structure of the oxide semiconductor layer is different.
10 is different.

The oxide semiconductor layer 124 included in the transistor 120 is formed by sequentially stacking an oxide semiconductor layer 124 a, an oxide semiconductor layer 124 b, and an oxide semiconductor layer 124 c.

The oxide semiconductor layer 124 a and the oxide semiconductor layer 124 b are provided over the insulating layer 103. The oxide semiconductor layer 124 c is provided in contact with the top surface of the oxide semiconductor layer 124 b and the top and side surfaces of the pair of electrodes 105 a and 105 b.

Among the oxide semiconductor layer 124 a, the oxide semiconductor layer 124 b, and the oxide semiconductor layer 124 c,
The oxide semiconductor film of one embodiment of the present invention can be applied to any one, two, or all.

For example, as the oxide semiconductor layer 124b, the oxide semiconductor layer 11 exemplified in Modification 1 above.
A configuration similar to 4a can be used. For example, the oxide semiconductor layers 124a and 124
The same structure as the oxide semiconductor layer 114b illustrated in the above modification example 1 can be used as c.

For example, by using an oxide with a high content of Ga which functions as a stabilizer for the oxide semiconductor layer 124 a provided in the lower layer of the oxide semiconductor layer 124 b and the oxide semiconductor layer 124 c provided in the upper layer, The release of oxygen from the layer 124a, the oxide semiconductor layer 124b, and the oxide semiconductor layer 124c can be suppressed.

For example, in the case where a channel is mainly formed in the oxide semiconductor layer 124b, an oxide with a high content of In is used for the oxide semiconductor layer 124b and the pair of electrodes 105a and 105b is in contact with the oxide semiconductor layer 124b. By providing, the on-state current of the transistor 120 can be increased.

[Other transistor configuration examples]
Hereinafter, a structural example of a top-gate transistor to which the oxide semiconductor film of one embodiment of the present invention can be applied is described.

In the following, in a component having the same configuration or the same function as above,
The same reference numerals are given, and duplicate contents are omitted.

[Configuration example]
FIG. 7A is a schematic cross-sectional view of a top-gate transistor 150 exemplified below.

The transistor 150 includes the oxide semiconductor layer 10 over the substrate 101 provided with the insulating layer 151.
4, a pair of electrodes 105 a and 105 b in contact with the top surface of the oxide semiconductor layer 104, the oxide semiconductor layer 104, an insulating layer 103 provided over the pair of electrodes 105 a and 105 b, and the insulating layer 1.
The gate electrode 102 which overlaps with the oxide semiconductor layer 104 is provided over 03. Insulating layer 10
3 and the gate electrode 102 are provided and an insulating layer 152 is provided.

  The oxide semiconductor film described in Embodiment 1 can be used for the oxide semiconductor layer 104.

The insulating layer 151 has a function of suppressing diffusion of impurities from the substrate 101 to the oxide semiconductor layer 104. Further, oxygen may be supplied to the oxide semiconductor layer 104 by heating. For example, a structure similar to that of the insulating layer 106 or the insulating layer 107 or a stacked structure thereof can be employed.

The insulating layer 152 is an insulating layer from which oxygen is released by heating and has a function of supplying oxygen to the oxide semiconductor layer 104. For example, a structure similar to that of the insulating layer 106 can be employed.

The insulating layer 153 is an insulating layer having a blocking effect such as oxygen, hydrogen, and water. For example, a structure similar to that of the insulating layer 107 can be employed.

Note that as the insulating layer 152, an insulating layer having a blocking effect of oxygen, hydrogen, water, or the like may be used. In that case, the insulating layer 153 may not be provided.

[Modification 3]
Hereinafter, a structural example of a transistor which is partially different from the transistor 150 will be described.

FIG. 7B is a schematic cross-sectional view of the transistor 160 exemplified below. The transistor 160 is different from the transistor 150 in that the structure of the oxide semiconductor layer is different.

The oxide semiconductor layer 164 included in the transistor 160 is formed by sequentially stacking an oxide semiconductor layer 164 a, an oxide semiconductor layer 164 b, and an oxide semiconductor layer 164 c.

Among the oxide semiconductor layer 164a, the oxide semiconductor layer 164b, and the oxide semiconductor layer 164c,
The oxide semiconductor film described in Embodiment 1 can be applied to any one, or any two or all of them.

For example, as the oxide semiconductor layer 164b, the oxide semiconductor layer 11 exemplified in Modification 1 above.
A configuration similar to 4a can be used. For example, as the oxide semiconductor layer 164a and the oxide semiconductor layer 164c, a structure similar to that of the oxide semiconductor layer 114b exemplified in the above modification example 1 can be used.

For example, by using an oxide with a high content of Ga which functions as a stabilizer for the oxide semiconductor layer 164 a provided in the lower layer of the oxide semiconductor layer 164 b and the oxide semiconductor layer 164 c provided in the upper layer, The release of oxygen from the layer 164a, the oxide semiconductor layer 164b, and the oxide semiconductor layer 164c can be suppressed.

[Modification 4]
Hereinafter, a structural example of a transistor that is partly different from the transistors 150 and 160 will be described.

The transistor 170 illustrated in FIG. 7C is different from the transistor 150 and the transistor 160 in that the structures of an oxide semiconductor layer, a gate insulating layer, and the like are different.

Among the oxide semiconductor layers 164 included in the transistor 170, the oxide semiconductor layer 164c is provided to cover the oxide semiconductor layer 164b and the end portions of the electrodes 105a and 105b.

In addition, the end portions of the oxide semiconductor layer 164 c and the insulating layer 103 are processed using the same photomask so as to substantially coincide with the end portions of the gate electrode 102.

The insulating layer 152 is provided in contact with side surfaces of the insulating layer 103 and the oxide semiconductor layer 164 c.

In the transistor illustrated in this embodiment, the metal oxide film illustrated in Embodiment 1 is applied to a semiconductor layer in which a channel is formed. Therefore, the transistor is a highly reliable transistor in which carrier trapping due to defects is suppressed, high field-effect mobility can be realized, and fluctuations in electrical characteristics are suppressed.

This embodiment can be implemented in appropriate combination with the other embodiments described in this specification.

Third Embodiment
In this embodiment, structural examples of the display panel of one embodiment of the present invention will be described.

[Configuration example]
FIG. 8A is a top view of a display panel of one embodiment of the present invention, and FIG. 8B can be used when a liquid crystal element is applied to a pixel of the display panel of one embodiment of the present invention. It is a circuit diagram for demonstrating a pixel circuit. FIG. 8C is a circuit diagram for describing a pixel circuit which can be used in the case of applying an organic EL element to a pixel of a display panel of one embodiment of the present invention.

The transistor disposed in the pixel portion can be formed according to Embodiment Mode 2. In addition, since the transistor can be easily an n-channel transistor, part of the driver circuit which can be formed using an n-channel transistor is formed over the same substrate as the transistor in the pixel portion. As described above, by using the transistor described in Embodiment 2 for the pixel portion and the driver circuit, a highly reliable display device can be provided.

An example of a block diagram of an active matrix display device is shown in FIG. A pixel portion 501, a first scan line driver circuit 502, a second scan line driver circuit 503, and a signal line driver circuit 504 are provided over a substrate 500 of a display device. In the pixel portion 501, a plurality of signal lines are extended from the signal line driver circuit 504, and a plurality of scan lines are extended from the first scan line driver circuit 502 and the second scan line driver circuit 503. Has been placed. Note that pixels each having a display element are provided in a matrix in a region where the scan line and the signal line intersect. Further, the substrate 500 of the display device is connected to a timing control circuit (also referred to as a controller or a control IC) through a connection portion such as a flexible printed circuit (FPC).

In FIG. 8A, the first scan line driver circuit 502, the second scan line driver circuit 503, and the signal line driver circuit 504 are formed over the same substrate 500 as the pixel portion 501. For this reason, the number of components such as a drive circuit provided outside is reduced, so that cost can be reduced. Also, the substrate 5
When the driving circuit is provided outside 00, it is necessary to extend the wiring, and the number of connections between the wirings increases. When the driver circuit is provided over the same substrate 500, the number of connections between the wirings can be reduced, which can improve the reliability or the yield.

[LCD panel]
In addition, an example of a circuit configuration of a pixel is illustrated in FIG. Here, a pixel circuit which can be applied to a pixel of a VA liquid crystal display panel is shown.

This pixel circuit can be applied to a configuration having a plurality of pixel electrode layers in one pixel. Each pixel electrode layer is connected to a different transistor, and each transistor is configured to be driven by different gate signals. Thus, signals applied to individual pixel electrode layers of multi-domain designed pixels can be independently controlled.

The gate wiring 512 of the transistor 516 and the gate wiring 513 of the transistor 517 are separated so that different gate signals can be given. On the other hand, the source electrode layer or the drain electrode layer 514 which functions as a data line is used in common by the transistor 516 and the transistor 517. As the transistor 516 and the transistor 517, the transistor described in Embodiment 2 can be used as appropriate. Thereby, a highly reliable liquid crystal display panel can be provided.

The shapes of a first pixel electrode layer electrically connected to the transistor 516 and a second pixel electrode layer electrically connected to the transistor 517 are described. The shapes of the first pixel electrode layer and the second pixel electrode layer are separated by slits. The first pixel electrode layer has a V-shaped shape, and the second pixel electrode layer is formed to surround the outer side of the first pixel electrode layer.

The gate electrode of the transistor 516 is connected to the gate wiring 512, and the transistor 517 is
The gate electrode is connected to the gate wiring 513. Gate wiring 512 and gate wiring 51
Different gate signals can be given to 3 to make the operation timings of the transistor 516 and the transistor 517 different and control the alignment of the liquid crystal.

In addition, a storage capacitor may be formed of the capacitor wiring 510, a gate insulating film functioning as a dielectric, and a capacitor electrode electrically connected to the first pixel electrode layer or the second pixel electrode layer.

The multi-domain structure includes a first liquid crystal element 518 and a second liquid crystal element 519 in one pixel. The first liquid crystal element 518 is composed of a first pixel electrode layer, a counter electrode layer, and a liquid crystal layer in between, and the second liquid crystal element 519 is a second pixel electrode layer, a counter electrode layer, and a liquid crystal layer in between Consists of.

Note that the pixel circuit illustrated in FIG. 8B is not limited to this. For example, a switch, a resistor, a capacitor, a transistor, a sensor, a logic circuit, or the like may be added to the pixel illustrated in FIG. 8B.

[Organic EL panel]
Another example of the circuit configuration of the pixel is shown in FIG. Here, a pixel structure of a display panel using an organic EL element is shown.

In the organic EL element, when a voltage is applied to the light-emitting element, electrons are injected from one of the pair of electrodes and holes from the other into the layer containing the light-emitting organic compound, and a current flows. Then, due to the recombination of electrons and holes, the light emitting organic compound forms an excited state,
Light is emitted when the excited state returns to the ground state. Due to such a mechanism, such a light-emitting element is referred to as a current-excitation light-emitting element.

FIG. 8C is a diagram showing an example of an applicable pixel circuit. Here, an example in which two n-channel transistors are used for one pixel is shown. Note that the metal oxide film of one embodiment of the present invention can be used for a channel formation region of an n-channel transistor. Further, digital time gray scale driving can be applied to the pixel circuit.

An applicable pixel circuit configuration and pixel operation when digital time gray scale driving is applied will be described.

The pixel 520 includes a switching transistor 521, a driving transistor 522, a light emitting element 524, and a capacitor 523. The switching transistor 521 has a gate electrode layer connected to the scanning line 526, a first electrode (one of the source electrode layer and the drain electrode layer) connected to the signal line 525, and a second electrode (the source electrode layer and the drain electrode layer). And the other is connected to the gate electrode layer of the driving transistor 522. Driving transistor 522
The gate electrode layer is connected to the power supply line 527 through the capacitor 523, the first electrode is connected to the power supply line 527, and the second electrode is connected to the first electrode (pixel electrode) of the light emitting element 524. . The second electrode of the light emitting element 524 corresponds to the common electrode 528. The common electrode 528 is electrically connected to a common potential line formed over the same substrate.

As the switching transistor 521 and the driving transistor 522, the transistors described in Embodiment 2 can be used as appropriate. Thereby, an organic EL display panel with high reliability can be provided.

The potential of the second electrode (common electrode 528) of the light-emitting element 524 is set to a low power supply potential. Note that
The low power supply potential is a potential lower than the high power supply potential set to the power supply line 527, for example, GN
D, 0 V, etc. can be set as the low power supply potential. The high power supply potential and the low power supply potential are set to be equal to or higher than the threshold voltage of the light emitting element 524 in the forward direction, and the potential difference is set to the light emitting element 52
4, current is caused to flow through the light emitting element 524 to emit light. The light emitting element 5
The forward voltage of 24 refers to a voltage at which a desired luminance is obtained, and includes at least a forward threshold voltage.

Note that the capacitor 523 can be omitted by substituting the gate capacitance of the driving transistor 522. The gate capacitance of the driving transistor 522 may be a capacitance formed between the channel formation region and the gate electrode layer.

Next, signals input to the driving transistor 522 are described. In the case of a voltage input voltage driving method, video signals are input to the driving transistor 522 such that the driving transistor 522 is fully turned on or off. Note that in order to operate the driving transistor 522 in a linear region, a voltage higher than the voltage of the power supply line 527 is applied to the gate electrode layer of the driving transistor 522. Further, a voltage of a value obtained by adding the threshold voltage Vth of the driving transistor 522 to the power supply line voltage is applied to the signal line 525.

When analog gradation driving is performed, the light emitting element 5 is formed on the gate electrode layer of the driving transistor 522.
A voltage equal to or greater than the value obtained by adding the threshold voltage Vth of the driving transistor 522 to the forward voltage of 24 is applied. Note that a video signal is input such that the driving transistor 522 operates in a saturation region, and current flows to the light emitting element 524. Further, in order to operate the driving transistor 522 in the saturation region, the potential of the power supply line 527 is set higher than the gate potential of the driving transistor 522. When the video signal is analog, current corresponding to the video signal can be supplied to the light-emitting element 524 to perform analog grayscale driving.

Note that the structure of the pixel circuit is not limited to the pixel structure illustrated in FIG. For example, FIG.
A switch, a resistor, a capacitor, a sensor, a transistor, a logic circuit, or the like may be added to the pixel circuit shown in C).

This embodiment can be implemented in appropriate combination with the other embodiments described in this specification.

Embodiment 4
In this embodiment, structural examples of a semiconductor device and an electronic device using the metal oxide film of one embodiment of the present invention will be described.

FIG. 9 is a block diagram of an electronic device including a semiconductor device to which the metal oxide film of one embodiment of the present invention is applied.

FIG. 10 is an external view of an electronic device including a semiconductor device to which the metal oxide film of one embodiment of the present invention is applied.

The electronic device illustrated in FIG. 9 includes an RF circuit 901, an analog baseband circuit 902, a digital baseband circuit 903, a battery 904, a power supply circuit 905, an application processor 906, a flash memory 910, a display controller 911, a memory circuit 91.
2, display 913, touch sensor 919, audio circuit 917, keyboard 918 and the like.

The application processor 906 includes a CPU 907, a DSP 908, and an interface (IF) 909. In addition, the memory circuit 912 can be configured by SRAM or DRAM.

By applying the transistor described in Embodiment 2 to the memory circuit 912, a highly reliable electronic device that can write and read information can be provided.

In addition, by applying the transistor described in Embodiment 2 to a register or the like included in the CPU 907 or the DSP 908, a highly reliable electronic device which can write and read information can be provided.

Note that when the off-leakage current of the transistor described in Embodiment 2 is extremely small,
A memory circuit 912 capable of holding memory for a long time, holding memory for a long time, and with sufficiently reduced power consumption can be provided. In addition, the CPU 907 or DSP 90 can store the state before power gating in a register or the like during the power gating period.
8 can be provided.

The display 913 includes a display unit 914, a source driver 915, and a gate driver 9.
16.

The display portion 914 includes a plurality of pixels arranged in a matrix. The pixel includes a pixel circuit, and the pixel circuit is electrically connected to the gate driver 916.

The transistor described in Embodiment 2 can be used as appropriate for the pixel circuit or the gate driver 916. Thereby, a highly reliable display can be provided.

As the electronic device, for example, a television device (also referred to as a television or a television receiver), a monitor for a computer, a camera such as a digital camera or a digital video camera, a digital photo frame, a mobile phone (mobile phone, mobile phone These include large-sized game machines such as portable game machines, portable information terminals, sound reproduction devices, and pachinko machines.

FIG. 10A illustrates a portable information terminal, which includes a main body 1001, a housing 1002, and a display portion 10.
03a, 1003b, and the like. The display unit 1003 b is a touch panel, and by touching a keyboard button 1004 displayed on the display unit 1003 b, screen operation and character input can be performed. Of course, the display unit 1003a may be configured as a touch panel. When a liquid crystal panel or an organic light emitting panel is manufactured using the transistor described in Embodiment 2 as a switching element and applied to the display portions 1003 a and 1003 b, the highly reliable portable information terminal can be obtained.

The portable information terminal illustrated in FIG. 10A has a function of displaying various information (a still image, a moving image, a text image, and the like), a calendar, a function of displaying a date, time, and the like on a display portion, and a display portion It is possible to have a function of operating or editing the information, a function of controlling processing by various software (programs), and the like. In addition, external connection terminals (e.g., an earphone terminal and a USB terminal), a recording medium insertion portion, and the like may be provided on the back surface and the side surface of the housing.

The portable information terminal illustrated in FIG. 10A may be configured to transmit and receive data wirelessly. It is also possible to purchase and download desired book data and the like from the electronic book server by wireless.

FIG. 10B shows a portable music player, and a main body 1021 is provided with a display portion 1023, a fixing portion 1022 to be attached to the ear, a speaker, an operation button 1024, an external memory slot 1025 and the like. By using the transistor described in Embodiment 2 as a switching element and manufacturing a liquid crystal panel or an organic light-emitting panel and applying it to the display portion 1023,
It can be a more reliable portable music player.

Furthermore, if the portable music player shown in FIG. 10B is provided with an antenna, a microphone function and a wireless function and cooperated with a mobile phone, hands-free conversation can be performed wirelessly while driving a passenger car or the like.

FIG. 10C illustrates a mobile phone, which includes two housings, a housing 1030 and a housing 1031. The housing 1031 is provided with a display panel 1032, a speaker 1033, a microphone 1034, a pointing device 1036, a camera lens 1037, an external connection terminal 1038, and the like. The housing 1030 is provided with a solar battery cell 1040 for charging the mobile phone, an external memory slot 1041, and the like. The antenna is the housing 1
031 is built in. The transistor described in Embodiment 2 is replaced with the display panel 103.
By applying to 2, the mobile phone can be made highly reliable.

In addition, the display panel 1032 is provided with a touch panel, and a plurality of operation keys 1035 displayed as images are illustrated by dashed lines in FIG. Note that a booster circuit for boosting the voltage output from the solar battery cell 1040 to a voltage required for each circuit is also mounted.

For example, a power transistor used in a power supply circuit such as a booster circuit can also be formed by setting the thickness of the metal oxide film of the transistor described in Embodiment 2 to 2 μm to 50 μm.

The display direction of the display panel 1032 changes as appropriate in accordance with the use mode. In addition, since the camera lens 1037 is provided on the same surface as the display panel 1032, a videophone can be used. The speaker 1033 and the microphone 1034 can be used for videophone calls, recording, and playback as well as voice calls. Further, the housing 1030 and the housing 1031 slide,
As shown in FIG. 10C, the developed state can be overlapped with one another, which makes it possible to reduce the size suitable for carrying.

The external connection terminal 1038 can be connected to various cables such as an AC adapter and a USB cable, and can charge and communicate data with a personal computer or the like. In addition, a recording medium can be inserted into the external memory slot 1041 to cope with a larger amount of data storage and movement.

Further, in addition to the above functions, an infrared communication function, a television reception function, and the like may be provided.

FIG. 10D illustrates an example of a television set. In the television device 1050, a display portion 1053 is incorporated in a housing 1051. An image can be displayed by the display portion 1053. In addition, a CPU is incorporated in a stand 1055 that supports the housing 1051. By applying the transistor described in Embodiment 2 to the display portion 1053 and the CPU, the television set 1050 can have high reliability.

The television set 1050 can be operated by an operation switch of the housing 1051 or a separate remote controller. Further, the remote controller may be provided with a display unit that displays information output from the remote controller.

Note that the television set 1050 is provided with a receiver, a modem, and the like. Receivers can receive general television broadcasts, and by connecting to a wired or wireless communication network via a modem, one-way (sender to receiver) or two-way (sender and receiver) It is also possible to perform information communication between receivers or between receivers.

In addition, the television device 1050 includes an external connection terminal 1054 and a storage medium playback / recording unit 1.
052 has an external memory slot. The external connection terminal 1054 can be connected to various types of cables such as a USB cable, and data communication with a personal computer or the like is possible. The storage medium playback and recording unit 1052 can insert a disc-shaped storage medium, read data stored in the storage medium, and write data to the storage medium. In addition, it is also possible to display on the display portion 1053 an image or video stored in the external memory 1056 inserted into the external memory slot.

Further, in the case where the off leak current of the transistor described in the second embodiment is extremely small,
By applying the transistor to the external memory 1056 or the CPU, the television set 1050 can have high reliability and sufficiently reduced power consumption.

100 transistor 101 substrate 102 gate electrode 103 insulating layer 104 oxide semiconductor layer 105 a electrode 105 b electrode 106 insulating layer 107 insulating layer 110 transistor 114 oxide semiconductor layer 114 a oxide semiconductor layer 114 b oxide semiconductor layer 120 transistor 124 oxide semiconductor layer 124 a The oxide semiconductor layer 124b The oxide semiconductor layer 124c The oxide semiconductor layer 150 The transistor 151 The insulating layer 152 The insulating layer 153 The insulating layer 160 The transistor 164 The oxide semiconductor layer 164a The oxide semiconductor layer 164b The oxide semiconductor layer 164c The oxide semiconductor layer 170 The transistor 500 Substrate 501 Pixel portion 502 Scanning line drive circuit 503 Scanning line drive circuit 504 Signal line drive circuit 510 Capacitance wiring 512 Gate wiring 513 Gate wiring 514 Drain electrode layer 516 Transistor 517 Transistor 518 Liquid crystal element 519 Liquid crystal element 520 Pixel 521 Switching transistor 522 Driving transistor 523 Capacitance element 524 Light emitting element 525 Signal line 526 Scan line 527 Power line 528 Common electrode 901 RF circuit 902 Analog baseband circuit 903 Digital baseband circuit 904 Battery 905 Power supply circuit 906 Application processor 907 CPU
908 DSP
910 Flash memory 911 Display controller 912 Memory circuit 913 Display 914 Display unit 915 Source driver 916 Gate driver 917 Audio circuit 918 Keyboard 919 Touch sensor 1001 Main body 1002 Housing 1003a Display unit 1003b Display unit 1004 Keyboard button 1021 Main unit 1022 Fixed unit 1023 Display unit 1024 Operation button 1025 External memory slot 1030 Case 1031 Case 1032 Display panel 1033 Speaker 1034 Microphone 1035 Operation key 1036 Pointing device 1037 Camera lens 1038 External connection terminal 1040 Solar cell 1041 External memory slot 1050 Television device 1051 Case 1052 Storage medium playback / recording unit 1053 Display unit 054 external connection terminal 1055 stand 1056 external memory

Claims (2)

A metal oxide film having a first crystal region and a second crystal region,
In the HAADF-STEM image of the metal oxide film,
The first crystalline region comprises a first layer, a second layer, and a first region between the first layer and the second layer,
The second crystalline region comprises a third layer, a fourth layer, and a second region between the third layer and the fourth layer,
The first region has an arrangement of atoms of n (n is a natural number of 2 or more) layers;
The second region has an arrangement of atoms of m (m is a natural number of 2 or more and a natural number other than n) layers,
The luminance of the atoms contained in the first layer and the luminance of the atoms contained in the second layer are greater than the luminance of the atoms contained in the first region,
The metal oxide film , wherein the luminance of the atoms contained in the third layer and the luminance of the atoms contained in the fourth layer are greater than the luminance of the atoms contained in the second region . In claim 1,
A semiconductor device comprising: the metal oxide film; and a gate electrode overlapping with the metal oxide film .