JP6544149B2 - 脆性材料基板における傾斜クラックの形成方法および脆性材料基板の分断方法 - Google Patents

脆性材料基板における傾斜クラックの形成方法および脆性材料基板の分断方法 Download PDF

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Publication number
JP6544149B2
JP6544149B2 JP2015170437A JP2015170437A JP6544149B2 JP 6544149 B2 JP6544149 B2 JP 6544149B2 JP 2015170437 A JP2015170437 A JP 2015170437A JP 2015170437 A JP2015170437 A JP 2015170437A JP 6544149 B2 JP6544149 B2 JP 6544149B2
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JP
Japan
Prior art keywords
crack
brittle material
material substrate
line
trench line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2015170437A
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English (en)
Japanese (ja)
Other versions
JP2017047546A (ja
Inventor
佑磨 岩坪
佑磨 岩坪
曽山　浩
浩 曽山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsuboshi Diamond Industrial Co Ltd
Original Assignee
Mitsuboshi Diamond Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuboshi Diamond Industrial Co Ltd filed Critical Mitsuboshi Diamond Industrial Co Ltd
Priority to JP2015170437A priority Critical patent/JP6544149B2/ja
Priority to TW105121922A priority patent/TWI625211B/zh
Priority to CN201610556619.XA priority patent/CN106477866B/zh
Priority to KR1020160091188A priority patent/KR101851453B1/ko
Publication of JP2017047546A publication Critical patent/JP2017047546A/ja
Application granted granted Critical
Publication of JP6544149B2 publication Critical patent/JP6544149B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/225—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising for scoring or breaking, e.g. tiles
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033—Apparatus for opening score lines in glass sheets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/10—Glass-cutting tools, e.g. scoring tools
    • C03B33/105—Details of cutting or scoring means, e.g. tips
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/10—Glass-cutting tools, e.g. scoring tools
    • C03B33/105—Details of cutting or scoring means, e.g. tips
    • C03B33/107—Wheel design, e.g. materials, construction, shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Dicing (AREA)
JP2015170437A 2015-08-31 2015-08-31 脆性材料基板における傾斜クラックの形成方法および脆性材料基板の分断方法 Expired - Fee Related JP6544149B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015170437A JP6544149B2 (ja) 2015-08-31 2015-08-31 脆性材料基板における傾斜クラックの形成方法および脆性材料基板の分断方法
TW105121922A TWI625211B (zh) 2015-08-31 2016-07-12 脆性材料基板中之傾斜裂痕之形成方法及脆性材料基板之分斷方法
CN201610556619.XA CN106477866B (zh) 2015-08-31 2016-07-14 脆性材料基板中倾斜裂纹的形成方法和基板断开方法
KR1020160091188A KR101851453B1 (ko) 2015-08-31 2016-07-19 취성 재료 기판에 있어서의 경사 크랙의 형성 방법 및 취성 재료 기판의 분단 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015170437A JP6544149B2 (ja) 2015-08-31 2015-08-31 脆性材料基板における傾斜クラックの形成方法および脆性材料基板の分断方法

Publications (2)

Publication Number Publication Date
JP2017047546A JP2017047546A (ja) 2017-03-09
JP6544149B2 true JP6544149B2 (ja) 2019-07-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015170437A Expired - Fee Related JP6544149B2 (ja) 2015-08-31 2015-08-31 脆性材料基板における傾斜クラックの形成方法および脆性材料基板の分断方法

Country Status (4)

Country Link
JP (1) JP6544149B2 (zh)
KR (1) KR101851453B1 (zh)
CN (1) CN106477866B (zh)
TW (1) TWI625211B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6955754B2 (ja) * 2017-07-25 2021-10-27 三星ダイヤモンド工業株式会社 ダイヤモンド刃先および基板分断方法
WO2020040482A2 (ko) 2018-08-24 2020-02-27 김보언 전문가 플랫폼의 제어 방법, 장치 및 프로그램

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4962075A (zh) * 1972-09-21 1974-06-15
US4498451A (en) * 1983-08-05 1985-02-12 At&T Technologies, Inc. Cutting articles along known planes
JP2785906B2 (ja) * 1994-02-14 1998-08-13 日本板硝子株式会社 ガラス板の切断方法
JP4342039B2 (ja) * 1999-06-15 2009-10-14 三星ダイヤモンド工業株式会社 ガラススクライバー及びスクライブ方法
WO2006011608A1 (ja) * 2004-07-30 2006-02-02 Mitsuboshi Diamond Industrial Co., Ltd. 基板の垂直クラック形成方法および垂直クラック形成装置
CN102284797B (zh) * 2005-07-06 2015-01-07 三星钻石工业股份有限公司 脆性材料用划线轮的制造方法
KR101228959B1 (ko) * 2008-05-30 2013-02-01 미쓰보시 다이야몬도 고교 가부시키가이샤 취성 재료 기판의 모따기 방법
JP5832064B2 (ja) * 2009-01-30 2015-12-16 三星ダイヤモンド工業株式会社 カッター及びそれを用いた脆性材料基板の分断方法
KR101247571B1 (ko) * 2010-06-14 2013-03-26 미쓰보시 다이야몬도 고교 가부시키가이샤 취성 재료 기판의 스크라이브 방법
JP5244202B2 (ja) * 2011-01-27 2013-07-24 三星ダイヤモンド工業株式会社 脆性材料基板のスクライブ方法
TWI483911B (zh) * 2011-09-28 2015-05-11 Mitsuboshi Diamond Ind Co Ltd 劃線裝置
KR101421353B1 (ko) * 2012-11-30 2014-07-18 (주)제일로닉 취성 재료 판부재의 절단 장치
JP6201608B2 (ja) * 2013-10-08 2017-09-27 三星ダイヤモンド工業株式会社 スクライブ方法
WO2015063960A1 (ja) * 2013-10-30 2015-05-07 坂東機工株式会社 ガラス板のスクライブ装置

Also Published As

Publication number Publication date
KR101851453B1 (ko) 2018-04-23
TW201707914A (zh) 2017-03-01
CN106477866B (zh) 2019-08-23
KR20170026118A (ko) 2017-03-08
TWI625211B (zh) 2018-06-01
CN106477866A (zh) 2017-03-08
JP2017047546A (ja) 2017-03-09

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