JP6544093B2 - Power supply circuit and voltage control method - Google Patents

Description

  The present invention relates to a power supply circuit and a voltage control method.

  There is known a semiconductor integrated circuit device having a controlled circuit having one or more MOSFETs formed on a substrate and a substrate bias control circuit for controlling a substrate bias supplied from the output end to the substrate of the controlled circuit (see FIG. Patent Document 1). The substrate bias control circuit includes a first MOSFET and a second MOSFET. The first MOSFET has the same current-voltage characteristics as the MOSFET of the controlled circuit, and converts subthreshold leakage current into a voltage signal. One end of the second MOSFET is connected to the output end of the substrate bias control circuit, and controls the substrate bias below the ground potential according to the voltage signal.

  Further, a MOS transistor circuit used in a semiconductor integrated device is known, which has a first conductivity type MOS type semiconductor element, a resistance element, and an adjustment unit (see Patent Document 2). The resistance element is inserted between the source of the first conductivity type MOS semiconductor device and the substrate of the first conductivity type MOS semiconductor device. The adjustment unit adjusts the amount of current flowing through the resistance element in accordance with the voltage drop value of the source of the first conductivity type MOS semiconductor device.

  Further, a power supply circuit operated by a power supply voltage supplied from an external terminal and forming an internal voltage different from the voltage supplied from the external terminal, and an internal circuit to which an internal voltage formed by the power supply circuit is applied BACKGROUND A semiconductor integrated circuit device is known (see Patent Document 3). The power supply circuit includes a charge pump circuit that forms a voltage that is larger than the internal voltage in an absolute value, variable impedance means provided between the output voltage formed by the charge pump circuit and the internal voltage, and differential amplification And a circuit. The differential amplifier circuit uses an output voltage formed by the charge pump circuit as an operating voltage, compares the reference voltage corresponding to the required internal voltage with the internal voltage, and controls the variable impedance means so that both match. The power supply circuit includes: a first power supply circuit that generates a voltage having the same absolute polarity as a voltage supplied from an external terminal and a second power supply circuit that generates a voltage different in polarity from a voltage supplied from an external terminal; Have. The output voltage formed by the charge pump circuit of the first power supply circuit is applied to an N-type well region in which a P-type well region in which elements constituting the internal circuit are formed. The output voltage formed by the charge pump circuit of the second power supply circuit is also used as a substrate back bias voltage applied to a P-type well region in which elements constituting the internal circuit are formed.

  In addition, a constant voltage circuit including a charge pump circuit unit that switches pulses to charge a capacitor and raises or lowers a voltage, an output voltage detection unit for detecting an output of the charge pump circuit unit, and a boosted voltage control unit. Is known (see Patent Document 4). The boosted voltage control unit outputs a control command according to the input value. The inverter in the charge pump circuit unit is responsible for boosting operation of the charge pump circuit unit, and the output of the charge pump circuit is fed back to the power supply voltage of the inverter to control the output amplitude of the inverter, thereby making the voltage constant. Plan.

JP, 2011-239185, A Unexamined-Japanese-Patent No. 2006-140228 JP, 2006-351173, A Unexamined-Japanese-Patent No. 2000-262043

It is desirable to reduce the number of elements of the power supply circuit and to reduce the size of the power supply circuit.
An object of the present invention is to provide a power supply circuit and a voltage control method capable of suppressing voltage fluctuation with a small number of elements.

The power supply circuit is connected between a load and a first transistor connected in series between the first power supply voltage node and the second power supply voltage node, and a third power supply voltage node and a voltage output terminal. A gate of the first transistor is connected to a node at which the first transistor and the load are connected, and a back gate of the first transistor is the voltage output terminal The gate of the second transistor is connected to the gate of the first transistor, the back gate of the second transistor is connected to the second power supply voltage node, and the third power supply is connected The voltage of the voltage node is higher than the voltage of the second power supply voltage node, and the voltage of the first power supply voltage node is equal to or higher than the voltage of the third power supply voltage node .

  It is possible to suppress the voltage fluctuation of the voltage output terminal with a small number of elements and a small size.

FIG. 1A is a view showing a configuration example of the power supply circuit and the logic circuit according to the first embodiment, and FIG. 1B is a view showing voltage waveforms. FIG. 2 is a cross-sectional view showing a configuration example of the power supply circuit according to the first embodiment. FIG. 3 is a view showing a configuration example of a power supply circuit and a logic circuit according to the second embodiment. FIG. 4 is a view showing a configuration example of a power supply circuit and a logic circuit according to the third embodiment. FIG. 5 is a diagram showing a configuration example of a power supply circuit and a logic circuit according to the fourth embodiment. FIGS. 6A and 6B are diagrams showing simulation results of voltage waveforms of the power supply circuit according to the first to fourth embodiments. FIG. 7 is a diagram showing a configuration example of the first power supply domain and the second power supply domain according to the fifth embodiment. FIG. 8 is a view showing an example of the layout of the semiconductor chip according to the fifth embodiment.

First Embodiment
FIG. 1A is a view showing a configuration example of the power supply circuit 101 and the logic circuit 102 according to the first embodiment, and FIG. 2 is a cross-sectional view showing a configuration example of the power supply circuit 101 according to the first embodiment. The power supply circuit 101 includes a load 103, a first n-channel field effect transistor M1, and a second n-channel field effect transistor M2. The load 103 is a first resistor R. The first resistor R and the first n-channel field effect transistor M1 are connected in series between the first power supply voltage node VDDE and the second power supply voltage node VDD. The second n-channel field effect transistor M2 is connected between the third power supply voltage node VDDα and the voltage output terminal Vout.

  The gate G1 of the first n-channel field effect transistor M1 is connected to the node to which the first n-channel field effect transistor M1 and the first resistor R are connected. The back gate BG1 of the first n-channel field effect transistor M1 is connected to the voltage output terminal Vout. The gate G2 of the second n-channel field effect transistor M2 is connected to the gate G1 of the first n-channel field effect transistor M1. The back gate BG2 of the second n-channel field effect transistor M2 is connected to the second power supply voltage node VDD.

  The first resistor R is connected between the first power supply voltage node VDDE and the drain D1 of the first n-channel field effect transistor M1. The gate G1 of the first n-channel field effect transistor M1 is connected to the drain D1 of the first n-channel field effect transistor M1. The source S1 of the first n-channel field effect transistor M1 is connected to the second power supply voltage node VDD. The drain D2 of the second n-channel field effect transistor M2 is connected to the third power supply voltage node VDDα. The source S2 of the second n-channel field effect transistor M2 is connected to the voltage output terminal Vout.

  The current I1 is the drain current of the first n-channel field effect transistor M1. The current I2 is the drain current of the second n-channel field effect transistor M2. The voltage V1 is the voltage of the drain D1 of the first n-channel field effect transistor M1. The voltage V2 is the voltage of the voltage output terminal Vout. The power supply circuit 101 generates a voltage V2 and outputs the voltage V2 from a voltage output terminal Vout.

  The logic circuit 102 has a power supply voltage terminal Vd and a reference potential terminal Vs. The power supply voltage terminal Vd of the logic circuit 102 is connected to the voltage output terminal Vout of the power supply circuit 101. The reference potential terminal Vs of the logic circuit 102 is connected to the reference potential node VSS. The power supply circuit 101 supplies the voltage V2 as a power supply voltage to the power supply voltage terminal Vd of the logic circuit 102. The logic circuit 102 receives the supply of the voltage V2 from the power supply circuit 101 and operates. The operation of the logic circuit 102 causes the current flowing inside the logic circuit 102 to fluctuate.

  Without the power supply circuit 101, when the current flowing inside the logic circuit 102 increases, the voltage of the power supply voltage terminal Vd decreases, and when the current flowing inside the logic circuit 102 decreases, the voltage of the power supply voltage terminal Vd rises . As a result, the voltage of the power supply voltage terminal Vd fluctuates according to the current of the logic circuit 102, as shown by the voltage V2a in FIG. 1B, resulting in undershoot and overshoot. If the voltage fluctuation of the power supply voltage terminal Vd is large, the logic circuit 102 may not operate normally.

  In the present embodiment, the power supply circuit 101 is connected to the power supply voltage terminal Vd of the logic circuit 102. As illustrated in FIG. 1B, the power supply circuit 101 can suppress the fluctuation of the voltage V2 of the power supply voltage terminal Vd of the logic circuit 102, and can suppress the undershoot and the overshoot. The reason will be described later.

  Next, the cross-sectional structure of the power supply circuit 101 will be described with reference to FIG. An n-well diffusion region 202 is provided on the surface of the p-type silicon substrate 201. A back gate BG1 of the first n-channel field effect transistor M1 and a back gate BG2 of the second n-channel field effect transistor M2 are provided on the surface of the n-well diffusion region 202. The back gates BG1 and BG2 are p-well diffusion regions, respectively, and are separated from each other.

First, the structure of the first n-channel field effect transistor M1 will be described. The first n-channel field effect transistor M1 has a gate G1, a source S1, a drain D1 and a back gate BG1. A source S1 and a drain D1 are provided on the surface of the back gate BG1. The source S1 and the drain D1 are n ⁺ regions respectively and separated from each other. An insulating film 204 is provided on the channel region between the source S1 and the drain D1. The insulating film 204 is a silicon oxide film. A gate G1 is provided on the insulating film 204. The gate G1 is polysilicon.

Next, the structure of the second n-channel field effect transistor M2 will be described. The second n-channel field effect transistor M2 has a gate G2, a source S2, a drain D2 and a back gate BG2. A source S2 and a drain D2 are provided on the surface of the back gate BG2. The source S2 and the drain D2 are n ⁺ regions respectively and separated from each other. An insulating film 205 is provided on the channel region between the source S2 and the drain D2. The insulating film 205 is a silicon oxide film. A gate G2 is provided on the insulating film 205. The gate G2 is polysilicon.

  Next, the structure of the first resistor R1 will be described. An insulating film 203 is provided on the surface of the n-well diffusion region 202. The insulating film 203 is a silicon oxide film. A first resistor R is provided on the insulating film 203. The first resistor R is polysilicon.

  Next, a connection method of the first n-channel field effect transistor M1, the second n-channel field effect transistor M2, and the first resistor R will be described. The p-type silicon substrate 201 is connected to the reference potential node VSS. The n-well diffusion region 202 is connected to the first power supply voltage node VDDE. The first resistor R is connected between the first power supply voltage node VDDE and the drain D1 of the first n-channel field effect transistor M1.

  The gate G1 of the first n-channel field effect transistor M1 is connected to the drain D1 of the first n-channel field effect transistor M1. The source S1 of the first n-channel field effect transistor M1 is connected to the second power supply voltage node VDD. The back gate BG1 of the first n-channel field effect transistor M1 is connected to the voltage output terminal Vout.

  The drain D2 of the second n-channel field effect transistor M2 is connected to the third power supply voltage node VDDα. The gate G2 of the second n-channel field effect transistor M2 is connected to the gate G1 of the first n-channel field effect transistor M1. The source S2 of the second n-channel field effect transistor M2 is connected to the voltage output terminal Vout. The back gate BG2 of the second n-channel field effect transistor M2 is connected to the second power supply voltage node VDD.

  Next, an example of design conditions of the power supply circuit 101 will be described. For example, an example in which the voltage V2 is designed to be the same as the voltage of the second power supply voltage node VDD will be described. The potential of the reference potential node VSS is a ground potential and is 0V. The voltage of the third power supply voltage node VDDα is higher than the voltage of the second power supply voltage node VDD, and has a relationship of VDDα> VDD. The voltage of the first power supply voltage node VDDE is equal to or higher than the voltage of the third power supply voltage node VDDα, and has a relationship of VDDE ≧ VDDα. That is, they have a relationship of VDDE ≧ VDDα> VDD. For example, the voltage of the first power supply voltage node VDDE is 2.5 V, the voltage of the third power supply voltage node VDDα is 1.2 V, and the voltage of the second power supply voltage node VDD is 0.9 V.

  The voltage V2 is set to be equal to the voltage of the second power supply voltage node VDD, and thus is 0.9V. The threshold voltage Vth2 of the second n-channel field effect transistor M2 is 0.4 V, for example.

Next, the voltage V1 is determined so as to satisfy the condition of the following equation.
V2 + Vth2 ≦ V1 <VDDα + Vth2
0.9 + 0.4 ≦ V1 <1.2 + 0.4
1.3 ≦ V1 <1.6

  The voltage V1 is, for example, 1.3V. The voltage V2 may not be the same as the voltage of the second power supply voltage node VDD. The voltage V2 can be, for example, 0.9V to 1.2V.

  Next, the reason why the power supply circuit 101 can suppress the fluctuation of the voltage V2 will be described. When the current in the logic circuit 102 increases, the voltage V2 of the voltage output terminal Vout decreases. In the power supply circuit 101, the following first suppression operation and second suppression operation are performed in parallel to suppress a drop in the voltage V2 of the voltage output terminal Vout.

  First, the first suppression operation will be described. When the voltage V2 of the voltage output terminal Vout decreases, the voltage of the back gate BG1 of the first n-channel field effect transistor M1 decreases. Then, the threshold voltage Vth1 of the first n-channel field effect transistor M1 increases, and the resistance between the source S1 and the drain D1 of the first n-channel field effect transistor M1 increases, and the first n-channel field effect transistor The drain current I1 of M1 decreases. Then, the voltage V1 of the gate G2 of the second n-channel field effect transistor M2 rises, the drain current I2 of the second n-channel field effect transistor M2 increases, and the voltage V2 of the voltage output terminal Vout rises. As a result, a drop in the voltage V2 of the voltage output terminal Vout is suppressed, and the voltage V2 is controlled to maintain a constant value (0.9 V).

  Next, the second suppression operation will be described. When the voltage V2 of the voltage output terminal Vout decreases, the voltage of the source S2 of the second n-channel field effect transistor M2 decreases. Then, the voltage of the back gate BG2 of the second n-channel field effect transistor M2 relatively increases, and the threshold voltage Vth2 of the second n-channel field effect transistor M2 decreases. Then, the resistance between the source S2 and the drain D2 of the second n-channel field effect transistor M2 decreases, the drain current I2 of the second n-channel field effect transistor M2 increases, and the voltage V2 of the voltage output terminal Vout To rise. As a result, a drop in the voltage V2 of the voltage output terminal Vout is suppressed, and the voltage V2 is controlled to maintain a constant value (0.9 V).

  Next, the suppression operation of the rise of the voltage V2 will be described. When the current in the logic circuit 102 decreases, the voltage V2 of the voltage output terminal Vout rises. In the power supply circuit 101, the following third suppression operation and fourth suppression operation are performed in parallel to suppress a rise in the voltage V2 of the voltage output terminal Vout.

  First, the third suppression operation will be described. When the voltage V2 of the voltage output terminal Vout rises, the voltage of the back gate BG1 of the first n-channel field effect transistor M1 rises. Then, the threshold voltage Vth1 of the first n-channel field effect transistor M1 decreases, the resistance between the source S1 and the drain D1 of the first n-channel field effect transistor M1 decreases, and the first n-channel field effect transistor The drain current I1 of M1 increases. Then, the voltage V1 of the gate G2 of the second n-channel field effect transistor M2 decreases, the drain current I2 of the second n-channel field effect transistor M2 decreases, and the voltage V2 of the voltage output terminal Vout decreases. Thereby, the rise of the voltage V2 of the voltage output terminal Vout is suppressed, and the voltage V2 is controlled to maintain a constant value (0.9 V).

  Next, the fourth suppression operation will be described. When the voltage V2 of the voltage output terminal Vout rises, the voltage of the source S2 of the second n-channel field effect transistor M2 rises. Then, the voltage of the back gate BG2 of the second n-channel field effect transistor M2 relatively decreases, and the threshold voltage Vth2 of the second n-channel field effect transistor M2 increases. Then, the resistance between the source S2 and the drain D2 of the second n-channel field effect transistor M2 is increased, the drain current I2 of the second n-channel field effect transistor M2 is decreased, and the voltage V2 of the voltage output terminal Vout is descend. Thereby, the rise of the voltage V2 of the voltage output terminal Vout is suppressed, and the voltage V2 is controlled to maintain a constant value (0.9 V).

  According to the present embodiment, the power supply circuit 101 suppresses the fluctuation of the voltage V2 with the three elements of the first n-channel field effect transistor M1, the second n-channel field effect transistor M2 and the first resistor R. can do. That is, the power supply circuit 101 can suppress the fluctuation of the voltage V2 of the voltage output terminal Vout with a small number of elements and a small size. By suppressing the fluctuation of the voltage V2, the operation margin of the logic circuit 102 can be secured.

  Next, a power supply circuit having an operational amplifier will be described for comparison of the present embodiment. The operational amplifier has, for example, seven transistors. Therefore, since the power supply circuit having the operational amplifier has at least seven transistors, the number of elements is large and the size is large.

  On the other hand, since the power supply circuit 101 of the present embodiment has three elements, the fluctuation of the voltage V2 of the voltage output terminal Vout can be suppressed with a small number of elements and a small size.

Second Embodiment
FIG. 3 is a diagram showing a configuration example of the power supply circuit 101 and the logic circuit 102 according to the second embodiment. In FIG. 3, a third n-channel field effect transistor 301 is provided as the load 103 in place of the first resistor R in FIG. 1A. The differences between the present embodiment and the first embodiment will be described below.

  The load 103 is a third n-channel field effect transistor 301. The third n-channel field effect transistor 301 has a gate and a drain connected to the first power supply voltage node VDDE, and a source and a back gate connected to the drain D1 of the first n-channel field effect transistor M1. The power supply circuit 101 is composed of three transistors M1, M2 and 301.

  The third n-channel field effect transistor 301 can promote the first suppression operation described above. In the first suppression operation described above, it has been described that when the voltage V2 of the voltage output terminal Vout decreases, the voltage V1 of the gate G2 of the second n-channel field effect transistor M2 increases. When the voltage V1 rises, the voltage of the back gate of the third n-channel field effect transistor 301 rises, and the threshold voltage Vth3 of the third n-channel field effect transistor M3 decreases. Then, the resistance value between the source and the drain of the third n-channel field effect transistor 301 is reduced. As a result, the voltage V1 of the gate G2 of the second n-channel field effect transistor M2 further rises. That is, the third n-channel field effect transistor 301 can promote the rise of the voltage V1, and can speed up the first suppression operation. Thus, the power supply circuit 101 can quickly return the voltage V2 to a constant value (0.9 V) even if the voltage V2 of the voltage output terminal Vout decreases.

  Similarly, the third n-channel field effect transistor 301 can promote the third suppression operation described above. In the third suppression operation described above, it has been described that when the voltage V2 of the voltage output terminal Vout rises, the voltage V1 of the gate G2 of the second n-channel field effect transistor M2 decreases. When the voltage V1 decreases, the voltage of the back gate of the third n-channel field effect transistor 301 decreases, and the threshold voltage Vth3 of the third n-channel field effect transistor M3 increases. Then, the resistance value between the source and the drain of the third n-channel field effect transistor 301 is increased. As a result, the voltage V1 of the gate G2 of the second n-channel field effect transistor M2 is further reduced. That is, the third n-channel field effect transistor 301 can promote the reduction of the voltage V1 and can speed up the third suppression operation. Thus, the power supply circuit 101 can quickly return the voltage V2 to a constant value (0.9 V) even if the voltage V2 of the voltage output terminal Vout rises.

  As described above, according to the present embodiment, since the third n-channel field effect transistor 301 can promote the fluctuation of the voltage V1 as compared with the first embodiment, the speed can be increased even if the voltage V2 fluctuates. The voltage V2 can be returned to a constant value (0.9 V).

Third Embodiment
FIG. 4 is a diagram showing a configuration example of the power supply circuit 101 and the logic circuit 102 according to the third embodiment. In FIG. 4, a third n-channel field effect transistor 401 is provided as the load 103 in place of the first resistor R in FIG. 1A. The differences between the present embodiment and the first embodiment will be described below.

  The load 103 is a third n-channel field effect transistor 401. The gate of the third n-channel field effect transistor 401 is connected to the gate G1 of the first n-channel field effect transistor M1. The drain of the third n-channel field effect transistor 401 is connected to the first power supply voltage node VDDE. The source of the third n-channel field effect transistor 401 is connected to the drain D1 of the first n-channel field effect transistor M1. The back gate of the third n-channel field effect transistor 401 is connected to the second power supply voltage node VDD. The power supply circuit 101 is composed of three transistors M1, M2 and 401.

  The third n-channel field effect transistor 401 can promote the first suppression operation described above. In the first suppression operation described above, it has been described that when the voltage V2 of the voltage output terminal Vout decreases, the voltage V1 of the gate G2 of the second n-channel field effect transistor M2 increases. When the voltage V1 rises, the voltage of the gate of the third n-channel field effect transistor 401 rises. As a result, the voltage V1 of the gate G2 of the second n-channel field effect transistor M2 further rises. That is, the third n-channel field effect transistor 401 can promote the rise of the voltage V1, and can speed up the first suppression operation. Thus, the power supply circuit 101 can quickly return the voltage V2 to a constant value (0.9 V) even if the voltage V2 of the voltage output terminal Vout decreases.

  Similarly, the third n-channel field effect transistor 401 can promote the third suppression operation described above. In the third suppression operation described above, it has been described that when the voltage V2 of the voltage output terminal Vout rises, the voltage V1 of the gate G2 of the second n-channel field effect transistor M2 decreases. When the voltage V1 decreases, the voltage at the gate of the third n-channel field effect transistor 401 decreases. As a result, the voltage V1 of the gate G2 of the second n-channel field effect transistor M2 is further reduced. That is, the third n-channel field effect transistor 401 can promote the reduction of the voltage V1, and can speed up the third suppression operation. Thus, the power supply circuit 101 can quickly return the voltage V2 to a constant value (0.9 V) even if the voltage V2 of the voltage output terminal Vout rises.

  As described above, according to the present embodiment, the third n-channel field effect transistor 401 can promote the fluctuation of the voltage V1 compared to the first embodiment, so that the speed can be increased even if the voltage V2 fluctuates. The voltage V2 can be returned to a constant value (0.9 V).

Fourth Embodiment
FIG. 5 is a diagram showing a configuration example of the power supply circuit 101 and the logic circuit 102 according to the fourth embodiment. FIG. 5 is the one in which a second resistor 501 is added to FIG. 1 (A). The differences between the present embodiment and the first embodiment will be described below.

  The power supply circuit 101 includes a first n-channel field effect transistor M1, a second n-channel field effect transistor M2, a first resistor R, and a second resistor 501. The second resistor 501 is connected between the voltage output terminal Vout and the reference potential node VSS.

  By providing the second resistor 501, the value of the first resistor R in the present embodiment (FIG. 5) is smaller than the value of the first resistor R in the first embodiment (FIG. 1A). can do. As a result, compared with the first embodiment, the present embodiment can speed up the first suppression operation and the third suppression operation, and even if the voltage V2 fluctuates, the voltage V2 can be fixed at a high speed. It can be returned to (0.9 V).

  FIG. 6A shows a simulation result of the waveform of the voltage V1 of the power supply circuit 101 according to the first to fourth embodiments. The voltage 601 is the voltage V1 of the power supply circuit 101 according to the first embodiment. The voltage 602 is the voltage V1 of the power supply circuit 101 according to the second embodiment. The voltage 603 is the voltage V1 of the power supply circuit 101 according to the third embodiment. The voltage 604 is the voltage V1 of the power supply circuit 101 according to the fourth embodiment.

  FIG. 6B is a diagram showing simulation results of the waveform of the voltage V2 of the power supply circuit 101 according to the first to fourth embodiments. The voltage 611 is the voltage V2 of the power supply circuit 101 according to the first embodiment. The voltage 612 is the voltage V2 of the power supply circuit 101 according to the second embodiment. The voltage 613 is the voltage V2 of the power supply circuit 101 according to the third embodiment. The voltage 614 is the voltage V2 of the power supply circuit 101 according to the fourth embodiment.

  At the time of 0 [sec], the logic circuit 102 operates and the voltage V2 decreases. Thereafter, the comparison of the speed at which the power supply circuit 101 returns the voltage V2 to a constant value is shown. The convergence value of the voltage 611 of the first embodiment, the voltage 613 of the third embodiment, and the voltage 614 of the fourth embodiment is set to 0.9V. On the other hand, the convergence value of the voltage 612 of the second embodiment is set to 1.2V.

  From this simulation result, it can be seen that the voltages 603 and 613 of the third embodiment return to a fixed value faster than the voltages 601 and 611 of the first embodiment. Also, it can be seen that the voltages 604 and 614 of the fourth embodiment return to a constant value faster than the voltages 601 and 611 of the first embodiment. Also, it can be seen that the voltages 604 and 614 of the fourth embodiment return to a constant value faster than the voltages 603 and 613 of the third embodiment.

Fifth Embodiment
FIG. 7 is a diagram showing a configuration example of the first power supply domain 701 and the second power supply domain 702 according to the fifth embodiment. The first power supply domain 701 has domains 703a and 703b. The second power supply domain 702 has domains 703c and 703d.

  The domain 703a includes a power supply unit 101a and a logic circuit 102a. The power supply unit 101a corresponds to the power supply circuit 101 in FIG. 1A, and the logic circuit 102a corresponds to the logic circuit 102 in FIG. 1A. The power supply unit 101a has the same configuration as the power supply circuit 101 of FIG. 1A, and includes a first n-channel field effect transistor M1a, a second n-channel field effect transistor M2a, and a first resistor Ra. The transistor M1a, the transistor M2a, and the resistor Ra correspond to the transistor M1, the transistor M2, and the resistor R in FIG. 1A, respectively. The power supply voltage terminal Vda corresponds to the power supply voltage terminal Vd of FIG. The reference potential terminal Vsa corresponds to the reference potential terminal Vs of FIG. The second power supply voltage node VDD1 corresponds to the second power supply voltage node VDD of FIG. 1 (A). The third power supply voltage node VDDα1 corresponds to the third power supply voltage node VDDα in FIG. The logic circuit 102a is, for example, a low speed operation circuit.

  The domain 703 b includes a power supply unit 101 b and a logic circuit 102 b. The power supply unit 101 b corresponds to the power supply circuit 101 in FIG. 1A, and the logic circuit 102 b corresponds to the logic circuit 102 in FIG. The power supply unit 101b has the same configuration as the power supply circuit 101 of FIG. 1A, and includes a first n-channel field effect transistor M1b, a second n-channel field effect transistor M2b, and a first resistor Rb. The transistor M1 b, the transistor M2 b, and the resistor Rb correspond to the transistor M1, the transistor M2, and the resistor R in FIG. 1A, respectively. The power supply voltage terminal Vdb corresponds to the power supply voltage terminal Vd of FIG. The reference potential terminal Vsb corresponds to the reference potential terminal Vs of FIG. The logic circuit 102 b is, for example, a high-speed operation circuit.

  The resistors Ra and Rb are commonly connected to the first power supply voltage node VDDE. The drains of the second n-channel field effect transistors M2a and M2b are commonly connected to the third power supply voltage node VDDα1. The sources of the first n-channel field effect transistors M1a and M1b are commonly connected to the second power supply voltage node VDD1. The reference potential terminals Vsa and Vsb are commonly connected to the reference potential node VSS.

  The domain 703 c includes a power supply unit 101 c and a logic circuit 102 c. The power supply unit 101c corresponds to the power supply circuit 101 in FIG. 1A, and the logic circuit 102c corresponds to the logic circuit 102 in FIG. 1A. The power supply unit 101c has the same configuration as the power supply circuit 101 of FIG. 1A, and includes a first n-channel field effect transistor M1c, a second n-channel field effect transistor M2c, and a first resistor Rc. The transistor M1c, the transistor M2c, and the resistor Rc correspond to the transistor M1, the transistor M2, and the resistor R in FIG. 1A, respectively. The power supply voltage terminal Vdc corresponds to the power supply voltage terminal Vd of FIG. The reference potential terminal Vsc corresponds to the reference potential terminal Vs of FIG. The second power supply voltage node VDD2 corresponds to the second power supply voltage node VDD of FIG. 1 (A). The third power supply voltage node VDDα2 corresponds to the third power supply voltage node VDDα in FIG. The logic circuit 102c is, for example, a constantly operating circuit.

  The domain 703 d includes a power supply unit 101 d and a logic circuit 102 d. The power supply unit 101 d corresponds to the power supply circuit 101 in FIG. 1A, and the logic circuit 102 d corresponds to the logic circuit 102 in FIG. The power supply unit 101 d includes a first n-channel field effect transistor M 1 d, a second n-channel field effect transistor M 2 d, a first resistor Rd, and a p-channel field effect transistor 704. The transistor M1 d, the transistor M2 d, and the resistor Rd respectively correspond to the transistor M1, the transistor M2, and the resistor R in FIG. In the p-channel field effect transistor 704, the source is connected to the third power supply voltage node VDDα2, the gate is connected to the control node PSW, and the drain is connected to the drain of the second n-channel field effect transistor M2d. The power supply voltage terminal Vdd corresponds to the power supply voltage terminal Vd of FIG. The reference potential terminal Vsd corresponds to the reference potential terminal Vs of FIG. The logic circuit 102d is, for example, an emergency operation circuit.

  When the p-channel field effect transistor 704 is turned on, the power supply unit 101d supplies a power supply voltage to the power supply voltage terminal Vdd of the logic circuit 102d, and the logic circuit 102d becomes operable. A logical product (AND) circuit 705 outputs a signal corresponding to the output signal of the logic circuit 102 d to the logic circuit 102 c.

  When the p-channel field effect transistor 704 is turned off, the power supply unit 101d does not supply the power supply voltage to the power supply voltage terminal Vdd of the logic circuit 102d, and the logic circuit 102d is stopped. Since the output signal of the logic circuit 102d has an indefinite value, the AND circuit 705 outputs a fixed value to the logic circuit 102c.

  The resistors Rc and Rd are commonly connected to the first power supply voltage node VDDE. When the p-channel field effect transistor 704 is on, the drains of the second n-channel field effect transistors M2c and M2d are commonly connected to the third power supply voltage node VDDα2. The sources of the first n-channel field effect transistors M1c and M1d are commonly connected to a second power supply voltage node VDD2. The reference potential terminals Vsc and Vsd are commonly connected to the reference potential node VSS.

  Next, power supply voltage nodes of the power supply units 101a and 101b will be described. The first power supply voltage node VDDE of the power supply unit 101a and the first power supply voltage node VDDE of the power supply unit 101b are connected to each other. The second power supply voltage node VDD1 of the power supply unit 101a and the second power supply voltage node VDD1 of the power supply unit 101b are mutually connected. The third power supply voltage node VDDα1 of the power supply unit 101a and the third power supply voltage node VDDα1 of the power supply unit 101b are connected to each other.

  Next, power supply voltage nodes of the power supply units 101a and 101c will be described. The first power supply voltage node VDDE of the power supply unit 101a and the first power supply voltage node VDDE of the power supply unit 101c are connected to each other. The second power supply voltage node VDD1 of the power supply unit 101a and the second power supply voltage node VDD2 of the power supply unit 101c are separated from each other. The third power supply voltage node VDDα1 of the power supply unit 101a and the third power supply voltage node VDDα2 of the power supply unit 101c are separated from each other.

  Power supply units 101a to 101d are provided in the logic circuits 102a to 102d, respectively. The second power supply voltage node VDD1 and the third power supply voltage node VDDα1 supply a voltage to the first power supply domain 701. The second power supply voltage node VDD2 and the third power supply voltage node VDDα2 supply a voltage to the second power supply domain 702. As a result, power supply noise generated in the logic circuits 102 a and 102 b in the first power supply domain 701 is not propagated to the logic circuits 102 c and 102 d in the second power supply domain 702. Similarly, power supply noise generated in the logic circuits 102 c and 102 d in the second power supply domain 702 does not propagate to the logic circuits 102 a and 102 b in the first power supply domain 701. Also, within the same power supply domain, it becomes possible to design a combination of IP macros supplied from different companies, and design assurance with the same power supply domain becomes possible.

  FIG. 8 is a view showing an example of the layout of the semiconductor chip 801 according to the present embodiment. The semiconductor chip 801 includes domains 703a to 703d, row blocks ROW1 to ROW4, and the like. As shown in FIG. 7, the domains 703a to 703d respectively include power supply units 101a to 101d. The row blocks ROW1 to ROW4 each include a power supply circuit 101 and a logic circuit 102. Since the power supply units 101a to 101d and the power supply circuit 101 can be realized with a small size, the power supply units 101a to 101d and the power supply circuit 101 can be provided in the domains 703a to 703d and the row blocks ROW1 to ROW4, respectively. Thus, power supply noise can be suppressed in units of the domains 703a to 703d and the row blocks ROW1 to ROW4.

  As shown in FIG. 7, the power supply unit 101a includes a first n-channel field effect transistor M1a and a second n-channel field effect transistor M2a. The power supply unit 101 b includes a first n-channel field effect transistor M 1 b and a second n-channel field effect transistor M 2 b.

  The back gates of the first n-channel field effect transistors M1a and M1b need to be isolated from one another. Thus, the power supply voltage terminal Vda of the logic circuit 102a and the power supply voltage terminal Vdb of the logic circuit 102b can be separated from each other.

  The back gates of the second n-channel field effect transistors M2a and M2b may be separated from each other or may be shared with each other. In the case of common use, it is preferable that the power supply units 101a and 101b be disposed close to each other.

  For example, since the power supply circuits 101 of the row blocks ROW1 and ROW2 are arranged close to each other, the back gates of the second n-channel field effect transistors M2 of both power supply circuits 101 can be made common. it can. The back gates of the first n-channel field effect transistors M1 of both power supply circuits 101 are separated from each other.

  Further, since the power supply units 101a and 101b are arranged at positions far from each other, the back gates of the second n-channel field effect transistors M2a and M2b are separated from each other. Also, the back gates of the first n-channel field effect transistors M1a and M1b are also separated from each other.

  In addition, the said embodiment only shows the example of embodiment in the case of implementing this invention, and the technical scope of this invention should not be limitedly interpreted by these. That is, the present invention can be implemented in various forms without departing from the technical concept or the main features thereof.

101 power supply circuit 102 logic circuit 103 load M1 first n-channel field effect transistor M2 second n-channel field effect transistor R first resistance VDDE first power supply voltage node VDD second power supply voltage node VDDα third power supply Voltage node VSS Reference potential node

Claims (13)

A load and a first transistor connected in series between the first power supply voltage node and the second power supply voltage node;
A second transistor connected between the third power supply voltage node and the voltage output terminal,
The gate of the first transistor is connected to a node at which the first transistor and the load are connected,
The back gate of the first transistor is connected to the voltage output terminal,
The gate of the second transistor is connected to the gate of the first transistor,
The back gate of the second transistor is connected to the second power supply voltage node ,
The voltage of the third power supply voltage node is higher than the voltage of the second power supply voltage node,
A power supply circuit, wherein a voltage of the first power supply voltage node is equal to or higher than a voltage of the third power supply voltage node . The load is connected between the first power supply voltage node and the drain of the first transistor,
The gate of the first transistor is connected to the drain of the first transistor,
The source of the first transistor is connected to the second power supply voltage node,
The drain of the second transistor is connected to the third power supply voltage node,
The power supply circuit according to claim 1, wherein a source of the second transistor is connected to the voltage output terminal. The back gate of the back gate and the second transistor of the first transistor, the power supply circuit of claim 1, wherein it is separated from each other. The power supply circuit according to any one of claims 1 to 3 , wherein the load is a first resistor. The load is a third transistor having a gate and a drain connected to the first power supply voltage node, and a source and a back gate connected to the drain of the first transistor. The power supply circuit according to any one of 3 . The load has a gate connected to the gate of the first transistor, a drain connected to the first power supply voltage node, a source connected to the drain of the first transistor, and a back gate connected to the second transistor. The power supply circuit according to any one of claims 1 to 3 , which is a third transistor connected to the power supply voltage node. 5. The power supply circuit according to claim 4 , further comprising a second resistor connected between the voltage output terminal and a reference potential node. A first power supply unit and a second power supply unit each having the load, the first transistor, and the second transistor;
The first power supply voltage node of the first power supply unit and the first power supply voltage node of the second power supply unit are mutually connected.
The second power supply voltage nodes of the first power supply unit and the second power supply unit are connected to each other.
The power supply circuit according to any one of claims 1 to 7 , wherein the third power supply voltage nodes of the first power supply unit and the second power supply unit are connected to each other. A first power supply unit and a second power supply unit each having the load, the first transistor, and the second transistor;
The first power supply voltage node of the first power supply unit and the first power supply voltage node of the second power supply unit are mutually connected.
The second power supply voltage nodes of the first power supply unit and the second power supply unit are separated from each other,
The power supply circuit according to any one of claims 1 to 7 , wherein the third power supply voltage node of the first power supply unit and the third power supply voltage node of the second power supply unit are separated from each other. Back gates of the first transistors of the first power supply unit and the second power supply unit are mutually separated;
9. The power supply circuit according to claim 8 , wherein back gates of said second transistors of said first power supply unit and said second power supply unit are separated from each other. Back gates of the first transistors of the first power supply unit and the second power supply unit are mutually separated;
9. The power supply circuit according to claim 8 , wherein back gates of the second transistors of the first power supply unit and the second power supply unit are shared with each other. A load and a first transistor connected in series between the first power supply voltage node and the second power supply voltage node;
A voltage control method of a power supply circuit, comprising: a third transistor connected between a third power supply voltage node and a voltage output terminal;
The gate of the first transistor is connected to a node at which the first transistor and the load are connected,
The back gate of the first transistor is connected to the voltage output terminal,
The gate of the second transistor is connected to the gate of the first transistor,
The back gate of the second transistor is connected to the second power supply voltage node,
The voltage of the third power supply voltage node is higher than the voltage of the second power supply voltage node,
The voltage of the first power supply voltage node is equal to or higher than the voltage of the third power supply voltage node,
When the voltage of the voltage output terminal decreases, the drain current of the first transistor decreases, the voltage of the gate of the second transistor increases, and the drain current of the second transistor increases, the voltage output Terminal voltage rises,
When the voltage of the voltage output terminal rises, the drain current of the first transistor increases, the voltage of the gate of the second transistor decreases, and the drain current of the second transistor decreases, the voltage output A voltage control method characterized in that a voltage of a terminal decreases. A load and a first transistor connected in series between the first power supply voltage node and the second power supply voltage node;
A voltage control method of a power supply circuit, comprising: a third transistor connected between a third power supply voltage node and a voltage output terminal;
The gate of the first transistor is connected to a node at which the first transistor and the load are connected,
The back gate of the first transistor is connected to the voltage output terminal,
The gate of the second transistor is connected to the gate of the first transistor,
The back gate of the second transistor is connected to the second power supply voltage node,
The voltage of the third power supply voltage node is higher than the voltage of the second power supply voltage node,
The voltage of the first power supply voltage node is equal to or higher than the voltage of the third power supply voltage node,
When the voltage at the voltage output terminal decreases, the drain current of the second transistor increases, and the voltage at the voltage output terminal increases.
When the voltage of the voltage output terminal is increased, the drain current of the second transistor is decreased, and the voltage of the voltage output terminal is decreased.

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