JP6531263B2 - Surface treatment apparatus and surface treatment method - Google Patents
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Description
本発明は、鋳鉄または炭素鋼などの鉄鋼からなる被加工物の表面を処理するための装置および方法に関する。 The present invention relates to an apparatus and method for treating the surface of a workpiece made of steel such as cast iron or carbon steel.
摺動部品であるタペットの摩耗特性向上のため、そのカム摺動面をチル鋳鉄で構成し、このチル鋳鉄に対して比較的低温度のＰＶＤ処理によりＴｉＮなどからなる硬質皮膜を成形する技術的手法が提案されている（たとえば、特許文献１参照）。 In order to improve the wear characteristics of the tappet, which is a sliding part, its cam sliding surface is made of chilled iron, and this chilled iron is technically formed with a relatively low temperature PVD process to form a hard coating made of TiN etc. A method has been proposed (see, for example, Patent Document 1).
本発明は、被加工物の耐摩耗性の向上を図りうるように当該被加工物の表面を処理する装置および方法を提供することを目的とする。 An object of the present invention is to provide an apparatus and method for treating the surface of a workpiece so as to improve the wear resistance of the workpiece.
本発明の表面処理装置は、Ｔｉ、Ｖ、Ｚｒ、Ｎｂ、Ｍｏ、ＴａおよびＷからなる群から選ばれる少なくとも１つの金属またはその炭化物を含むチップと、前記チップと鉄鋼からなる被加工物とを相対的に運動させる第１駆動装置と、前記チップと前記被加工物との間に導電性ナノパーティクルが水または水溶液に分散されている加工液を供給する加工液供給装置と、前記チップと前記被加工物との間に前記加工液を介してアーキングを発生させる高周波パルス電圧を出力する高周波電源装置と、前記チップを前記被加工物に対して相対的に振動または運動させることにより、前記加工液に含まれている水の電気分解により発生する気泡をナノバブルに変化させる第２駆動装置と、を備えていることを特徴とする。
The surface treatment apparatus of the present invention comprises: a chip containing at least one metal selected from the group consisting of Ti, V, Zr, Nb, Mo, Ta, and W, or a carbide thereof; A first driving device to move relatively, a working fluid supply device for supplying a working fluid in which conductive nanoparticles are dispersed in water or an aqueous solution between the tip and the workpiece, the tip and the tip A high frequency power supply device for outputting a high frequency pulse voltage generating arcing between the workpiece and the workpiece via the working fluid, and the processing by vibrating or moving the chip relative to the workpiece. And a second driving device configured to change bubbles generated by electrolysis of water contained in the liquid into nano bubbles .
本発明の表面処理方法は、Ｔｉ、Ｖ、Ｚｒ、Ｎｂ、Ｍｏ、ＴａおよびＷからなる群から選ばれる少なくとも１つの金属またはその炭化物を含むチップと、鉄鋼からなる被加工物とを対向配置する工程と、前記チップと前記被加工物との間に導電性ナノパーティクルが水または水溶液に分散されている加工液を供給する工程と、前記チップを前記被加工物に対して相対的に振動または運動させることにより前記チップと前記被加工物との間隙に存在する前記加工液に含まれている水の電気分解により発生する気泡をナノバブルに変化させる工程と、前記チップと前記被加工物との間に高周波パルス電圧を印加してアーキングを発生させて、前記チップを構成する金属またはその炭化物と前記加工液に分散されている前記導電性ナノパーティクルとのうち少なくとも一方に由来する粒子を前記被加工物の表面にドーピングすることによりその局所的な加工表面に耐摩耗性を向上させた改質層を生成する工程と、を含んでいることを特徴とする。
In the surface treatment method of the present invention, a chip containing at least one metal selected from the group consisting of Ti, V, Zr, Nb, Mo, Ta and W or a carbide thereof is placed opposite to a workpiece made of steel. And supplying a working fluid in which conductive nanoparticles are dispersed in water or an aqueous solution between the chip and the work, and vibrating or vibrating the chip relative to the work. Changing the bubbles generated by the electrolysis of the water contained in the working fluid present in the gap between the chip and the workpiece by moving into nano bubbles, and the chip and the workpiece The high frequency pulse voltage is applied between them to generate arcing, and the conductive nano particles dispersed in the metal or its carbide constituting the chip and the working fluid Forming a modified layer with improved wear resistance on the locally processed surface by doping particles derived from at least one of the above into the surface of the workpiece. I assume.
当該構成の表面処理装置および表面処理方法によれば、Ｔｉ、Ｖ、Ｚｒ、Ｎｂ、Ｍｏ、ＴａおよびＷからなる群から選ばれる少なくとも１つの金属またはその炭化物（ＴｉＣ、ＶＣ、ＺｒＣ、ＮｂＣ、Ｍｏ2Ｃ、ＴａＣおよびＷＣのうち少なくとも１つ）の粒子が、鉄鋼からなる被加工物の表面にドーピングされることで、当該被加工物の耐摩耗性の向上が図られる。 According to the surface treatment apparatus and the surface treatment method of the configuration, at least one metal selected from the group consisting of Ti, V, Zr, Nb, Mo, Ta and W or a carbide thereof (TiC, VC, ZrC, NbC, Mo By doping particles of at least one of 2 C, TaC and WC on the surface of a workpiece made of steel, the wear resistance of the workpiece can be improved.
（表面処理装置の構成）
図１に概要的に示されている本発明の一実施形態としての表面処理装置は、チップ１と、加工液供給装置１０と、第１駆動装置１１と、第２駆動装置１２と、高周波電源装置１３と、制御装置２と、を備えている。
(Configuration of surface treatment device)
The surface treatment apparatus as one embodiment of the present invention schematically shown in FIG. 1 comprises a chip 1, a working fluid supply device 10, a first drive device 11, a second drive device 12, and a high frequency power supply. A device 13 and a control device 2 are provided.
チップ１は、Ｔｉ、Ｖ、Ｚｒ、Ｎｂ、Ｍｏ、ＴａおよびＷからなる群から選ばれる少なくとも１つの金属またはその炭化物（ＴｉＣ、ＶＣ、ＺｒＣ、ＮｂＣ、Ｍｏ2Ｃ、ＴａＣおよびＷＣのうち少なくとも１つ）を表面に含んでいる。例えば、チップ１のうち、被加工物Ｗ（鋳鉄または炭素鋼などの鉄鋼からなる。）に対向する領域のみが当該金属またはその炭化物からなっていてもよい。 The tip 1 is made of at least one metal or its carbide selected from the group consisting of Ti, V, Zr, Nb, Mo, Ta and W (at least one of TiC, VC, ZrC, NbC, Mo 2 C, TaC and WC) H) on the surface. For example, only the area of the chip 1 facing the workpiece W (made of cast iron or steel such as carbon steel) may be made of the metal or its carbide.
加工液供給装置１０は、チップ１による被加工物Ｗの加工領域に加工液Ｑを供給する。例えば、加工液Ｑは、チップ１の内部に形成された経路（図示略）を通じて、チップ１の外部に供給されてもよい。加工液Ｑは、溶媒（たとえば水またはアルコール水溶液などの水溶液）に導電性ナノパーティクル（ナノカーボンなど、１〜１００ナノオーダーの大きさを有する導電性粒子）を分散させたものである。加工液Ｑには、分散剤または増粘剤（たとえばグリコール系添加剤）のほか、防錆剤および金属（銅など）の腐食抑制剤が添加されていてもよい。加工液Ｑには、活性化ガスが混入されていてもよい。 The processing liquid supply device 10 supplies the processing liquid Q to the processing area of the workpiece W by the chip 1. For example, the working fluid Q may be supplied to the outside of the chip 1 through a path (not shown) formed inside the chip 1. The working fluid Q is one in which conductive nanoparticles (conductive particles having a size of about 1 to 100 nano order, such as nano carbon) are dispersed in a solvent (for example, an aqueous solution such as water or an aqueous alcohol solution). In the processing fluid Q, in addition to a dispersant or a thickener (for example, a glycol additive), a rust inhibitor and a metal (such as copper) corrosion inhibitor may be added. The processing fluid Q may be mixed with an activation gas.
第１駆動装置１１は、チップ１と被加工物Ｗとを相対的に運動させるように構成されている。第１駆動装置１１は、例えば、チップ１を昇降する昇降装置と、被加工物Ｗが載置されたＹテーブルおよび当該Ｙテーブルが載置されたＸテーブルと、により構成される。 The first drive device 11 is configured to move the chip 1 and the workpiece W relative to each other. The first drive device 11 is configured of, for example, a lifting and lowering device that lifts and lowers the chip 1, a Y table on which the workpiece W is placed, and an X table on which the Y table is loaded.
第２駆動装置１２は、チップ１と被加工物Ｗとを相対的に振動または運動させるように構成されている。第２駆動装置１２が、チップ１を被加工物Ｗの表面に平行な方向に超音波振動（例えば２０ｋＨｚ以上の周波数での振動）させる超音波振動子（圧電素子）を備えていてもよい。第２駆動装置１２が、チップ１が略円柱状である場合、チップ１をその軸線回りに回転させるスピンドル等の回動装置を備えていてもよい。 The second drive device 12 is configured to relatively vibrate or move the tip 1 and the workpiece W. The second drive device 12 may include an ultrasonic transducer (piezoelectric element) that ultrasonically vibrates (for example, vibrates at a frequency of 20 kHz or more) in a direction parallel to the surface of the workpiece W. When the tip 1 has a substantially cylindrical shape, the second drive device 12 may be provided with a pivoting device such as a spindle that rotates the tip 1 about its axis.
高周波電源装置１３は、対向配置されているチップ１と被加工物Ｗとの間に高周波パルス電圧を印加する。 The high frequency power supply device 13 applies a high frequency pulse voltage between the chip 1 and the workpiece W which are disposed opposite to each other.
制御装置２は、コンピュータ（ＣＰＵ（演算処理装置）、ＲＯＭまたはＲＡＭなどのメモリ（記憶装置）およびＩ／Ｆ回路等により構成されている。）により構成されている。制御装置２は、加工液供給装置１０、第１駆動装置１１、第２駆動装置１２および高周波電源装置１３のそれぞれの動作を制御する。制御装置２による制御は、その構成要素である演算処理装置が、記憶装置から必要なデータおよびソフトウェア（プログラム）を読み取り、当該読み取りデータおよびソフトウェアにしたがって演算処理を実行することにより、当該制御処理が実行される。 The control device 2 is configured by a computer (composed of a CPU (arithmetic processing unit), a memory (storage device) such as a ROM or a RAM, an I / F circuit, etc.). The control device 2 controls the operations of the machining fluid supply device 10, the first drive device 11, the second drive device 12, and the high frequency power supply device 13. The control processing by the control device 2 is performed by the arithmetic processing device which is the constituent element reading necessary data and software (program) from the storage device and executing arithmetic processing in accordance with the read data and software. To be executed.
（表面処理方法）
前記構成の表面処理装置を用いて実行される表面処理方法に関して説明する。
(Surface treatment method)
The surface treatment method implemented using the surface treatment apparatus of the said structure is demonstrated.
まず、第１駆動装置１１の動作が制御されることによって、チップ１を被加工物Ｗに対して対向配置させる（図２／ＳＴＥＰ０２）。チップ１と被加工物Ｗとの間隔Ｄは、たとえば０．００２〜０．０２［ｍｍ］の範囲に調節される。 First, by controlling the operation of the first drive device 11, the chip 1 is disposed to face the workpiece W (FIG. 2 / STEP 02). The distance D between the tip 1 and the workpiece W is adjusted, for example, in the range of 0.002 to 0.02 [mm].
次に、加工液供給装置１０の動作が制御されることによって、チップ１および被加工物Ｗの間隙に加工液Ｑが供給される（図２／ＳＴＥＰ０４）。 Next, by controlling the operation of the working fluid supply device 10, the working fluid Q is supplied to the gap between the chip 1 and the workpiece W (FIG. 2 / STEP 04).
さらに、第２駆動装置１２の動作が制御されることによって、チップ１を被加工物Ｗに対して間隔Ｄを変化させないように振動または運動させる（図２／ＳＴＥＰ０６）。これにより、チップ１および被加工物Ｗの間隙に存在する加工液Ｑに含まれている水が電気分解されること等に応じて、当該間隙にナノバブルが発生する。 Furthermore, by controlling the operation of the second drive device 12, the tip 1 is vibrated or moved so as not to change the distance D with respect to the workpiece W (FIG. 2 / STEP 06). Thereby, in response to the water contained in the working fluid Q present in the gap between the chip 1 and the workpiece W being electrolyzed, nano bubbles are generated in the gap.
そして、高周波電源装置１３の動作が制御されることによって、チップ１および被加工物Ｗの間に高周波パルス電圧が印可される（図２／ＳＴＥＰ０８）。これにより、チップ１および被加工物Ｗの間に断続的または周期的にアーキングが発生する。パルス電圧の振幅は、たとえば１００〜２００［Ｖ］の範囲に調節される。パルス電圧の周波数は、たとえば１［ＭＨｚ］に調節される。チップ１および被加工物Ｗの間への電圧印加時間は、たとえば５［ｍｉｎ］以上、１０［ｍｉｎ］以上など、任意に調節される。 Then, by controlling the operation of the high frequency power supply device 13, a high frequency pulse voltage is applied between the chip 1 and the workpiece W (FIG. 2 / STEP 08). Thereby, arcing occurs intermittently or periodically between the chip 1 and the workpiece W. The amplitude of the pulse voltage is adjusted, for example, in the range of 100 to 200 [V]. The frequency of the pulse voltage is adjusted to, for example, 1 [MHz]. The voltage application time between the chip 1 and the workpiece W is arbitrarily adjusted, for example, 5 [min] or more, 10 [min] or more.
その結果、Ｔｉ、Ｖ、Ｚｒ、Ｎｂ、Ｍｏ、ＴａおよびＷからなる群から選ばれる少なくとも１つの金属またはその炭化物（ＴｉＣ、ＶＣ、ＺｒＣ、ＮｂＣ、Ｍｏ2Ｃ、ＴａＣおよびＷＣのうち少なくとも１つ）の粒子が、被加工物Ｗの表面に５ｗｔ％以上、好ましくは１０ｗｔ％、さらに好ましくは１５ｗｔ％以上ドーピングされる。被加工物の表面に対する当該金属またはその炭化物のドープ量は、パルス電圧の印可回数が多くなるほど（さらにパルス電圧が大きくなるほど）多くなる。 As a result, at least one metal or its carbide selected from the group consisting of Ti, V, Zr, Nb, Mo, Ta and W (TiC, VC, ZrC, NbC, NbC, Mo 2 C, TaC and WC) ) Are doped in the surface of the workpiece W by 5 wt% or more, preferably 10 wt%, more preferably 15 wt% or more. The doping amount of the metal or its carbide on the surface of the workpiece increases as the number of times of application of the pulse voltage increases (and as the pulse voltage increases).
（実施例）
Ｔｉからなるチップ１と、鋳鉄からなる被加工物Ｗとが間隔Ｄ＝０．０１［ｍｍ］で対向配置された。ナノカーボン粒子（粒径：３００〜８００［ｎｍ］）を溶媒である水に０．１〜１．０％の範囲に含まれる量（ここでは０．５％）だけ分散させることにより加工液Ｑが調整された。加工液Ｑの動粘度が２〜５［ｍｍ2／ｓ］の範囲に含まれるように（ここでは２．５［ｍｍ2／ｓ］になるように）、適当な増粘剤（ＰＥＧ（ポリエチレングリコール）など）が加工液Ｑに添加された。高周波電源装置１３によってチップ１および被加工物Ｗの間に１０［ｍｉｎ］にわたって最大値２００［Ｖ］のパルス電圧（パルス周波数１［ＭＨｚ］）が形成された。
(Example)
The tip 1 made of Ti and the workpiece W made of cast iron were disposed to face each other at a distance D = 0.01 [mm]. The processing fluid Q is dispersed by dispersing nanocarbon particles (particle size: 300 to 800 nm) in water as a solvent in an amount (0.5% in this case) included in the range of 0.1 to 1.0%. Was adjusted. An appropriate thickener (PEG (polyethylene) so that the kinematic viscosity of the working fluid Q is included in the range of 2 to 5 [mm 2 / s] (here, 2.5 [mm 2 / s]) Glycol) etc. were added to the processing fluid Q. A pulse voltage (pulse frequency 1 [MHz]) having a maximum value of 200 [V] was formed between the chip 1 and the workpiece W by the high frequency power supply device 13 for 10 [min].
（比較例）
（比較例１）
チップ１および被加工物Ｗの間に加工液Ｑに代えて純水を介在させたほかは実施例と同一の条件下で被加工物Ｗの表面加工が試みられた。
(Comparative example)
(Comparative example 1)
Surface processing of the workpiece W was attempted under the same conditions as in the example except that pure water was interposed between the chip 1 and the workpiece W instead of the processing fluid Q.
（比較例２）
チップ１および被加工物Ｗの間に加工液Ｑに代えて金属加工用の切削油を介在させたほかは実施例と同一の条件下で被加工物Ｗの表面加工が試みられた。
(Comparative example 2)
Surface processing of the workpiece W was attempted under the same conditions as in the example except that a cutting oil for metal processing was interposed between the tip 1 and the workpiece W in place of the working fluid Q.
（評価）
実施例、比較例１および比較例２のそれぞれにおける被加工物Ｗの表面をＥＤＸ（エネルギー分散型Ｘ線分光法）により観察した。観察結果が、図３Ａ〜図３Ｃのそれぞれに示されている。図３Ａ〜図３Ｃから、実施例の表面処理方法により得られた被加工物Ｗの表面には、比較例１および２の表面処理方法により得られた被加工物Ｗの表面と比較して、Ｔｉ粒子（またはＴｉＣ粒子）が多量にドープされていることがわかる。
(Evaluation)
The surface of the workpiece W in each of the example, the comparative example 1 and the comparative example 2 was observed by EDX (energy dispersive X-ray spectroscopy). The observation results are shown in each of FIGS. 3A to 3C. From FIGS. 3A to 3C, the surface of the workpiece W obtained by the surface treatment method of the embodiment is compared with the surface of the workpiece W obtained by the surface treatment methods of Comparative Examples 1 and 2; It can be seen that Ti particles (or TiC particles) are heavily doped.
各被加工物Ｗの表面における主要な元素の質量濃度が、ＥＤＸ分析結果に基づき、ＦＰ法（ファンダメンタルパラメータ法）にしたがって定量分析された。各被加工物の表面層のビッカース硬度がＪＩＳ Ｚ ２２４４に準拠して測定された。表１にはこれらの試験結果がまとめて示されている。 The mass concentration of the main element on the surface of each workpiece W was quantitatively analyzed according to the FP method (fundamental parameter method) based on the EDX analysis result. The Vickers hardness of the surface layer of each workpiece was measured in accordance with JIS Z 2244. Table 1 summarizes these test results.
表１から、次のことがわかる。すなわち、実施例の表面処理方法により得られた被加工物Ｗの表面層（改質層）におけるＴｉ含有量が、比較例１および比較例２の表面処理方法により得られた被加工物Ｗの表面層におけるＴｉ含有量よりも多い。実施例の表面処理方法により得られた被加工物Ｗの表面層のビッカース硬度が、比較例１および比較例２の表面処理方法により得られた被加工物Ｗの表面層のビッカース硬度よりも高い。 Table 1 shows the following. That is, the Ti content of the surface layer (modified layer) of the workpiece W obtained by the surface treatment method of the embodiment is the same as that of the workpiece W obtained by the surface treatment method of Comparative Example 1 and Comparative Example 2. More than the Ti content in the surface layer. The Vickers hardness of the surface layer of the workpiece W obtained by the surface treatment method of the example is higher than the Vickers hardness of the surface layer of the workpiece W obtained by the surface treatment method of Comparative Example 1 and Comparative Example 2 .
（本発明の他の実施形態）
前記実施形態の表面処理装置から第２駆動装置１２が省略され、被加工物Ｗの表面処理に際してチップ１と被加工物Ｗとの間隙におけるナノバブルの形成（図２／ＳＴＥＰ０６参照）が省略されてもよい。
(Other embodiments of the present invention)
The second driving device 12 is omitted from the surface treatment apparatus of the embodiment, and the formation of nanobubbles in the gap between the chip 1 and the workpiece W (see FIG. 2 / STEP 06) is omitted in the surface treatment of the workpiece W. It is also good.
１‥チップ、２‥制御装置、１０‥加工液供給装置、１１‥第１駆動装置、１２‥第２駆動装置、１３‥高周波電源装置、Ｑ‥加工液、Ｗ‥被加工物。 1. chip, 2. control device, 10. working fluid supply device, 11. first drive device, 12. second drive device, 13. high frequency power supply device, Q working fluid, W. workpiece.
Claims (2)
前記チップと鉄鋼からなる被加工物とを相対的に運動させる第１駆動装置と、
前記チップと前記被加工物との間に導電性ナノパーティクルが水または水溶液に分散されている加工液を供給する加工液供給装置と、
前記チップと前記被加工物との間に前記加工液を介してアーキングを発生させる高周波パルス電圧を出力する高周波電源装置と、
前記チップを前記被加工物に対して相対的に振動または運動させることにより、前記加工液に含まれている水の電気分解により発生する気泡をナノバブルに変化させる第２駆動装置と、を備えていることを特徴とする表面処理装置。 A tip comprising at least one metal selected from the group consisting of Ti, V, Zr, Nb, Mo, Ta and W or a carbide thereof
A first drive device for relatively moving the tip and a workpiece made of steel;
A processing fluid supply device for supplying a processing fluid in which conductive nanoparticles are dispersed in water or an aqueous solution between the chip and the workpiece;
A high frequency power supply device for outputting a high frequency pulse voltage that generates arcing between the chip and the workpiece via the working fluid;
And a second driving device that changes bubbles generated by electrolysis of water contained in the processing fluid into nano bubbles by vibrating or moving the chip relative to the workpiece. Surface treatment apparatus characterized in that
前記チップと前記被加工物との間に導電性ナノパーティクルが水または水溶液に分散されている加工液を供給する工程と、
前記チップを前記被加工物に対して相対的に振動または運動させることにより前記チップと前記被加工物との間隙に存在する前記加工液に含まれている水の電気分解により発生する気泡をナノバブルに変化させる工程と、
前記チップと前記被加工物との間に高周波パルス電圧を印加してアーキングを発生させて、前記チップを構成する金属またはその炭化物と前記加工液に分散されている前記導電性ナノパーティクルとのうち少なくとも一方に由来する粒子を前記被加工物の表面にドーピングすることによりその局所的な加工表面に耐摩耗性を向上させた改質層を生成する工程と、を含んでいることを特徴とする表面処理方法。
Oppositely arranging a chip containing at least one metal or its carbide selected from the group consisting of Ti, V, Zr, Nb, Mo, Ta and W, and a workpiece made of steel;
Supplying a working fluid in which conductive nanoparticles are dispersed in water or an aqueous solution between the chip and the workpiece;
The bubbles generated by the electrolysis of the water contained in the working fluid present in the gap between the tip and the workpiece by vibrating or moving the tip relative to the workpiece are nanobubbles Changing to
A high frequency pulse voltage is applied between the chip and the workpiece to generate arcing, and of the metal or its carbide constituting the chip and the conductive nanoparticles dispersed in the processing fluid And D. producing a modified layer with improved wear resistance on the locally processed surface by doping particles derived from at least one on the surface of the object to be processed. Surface treatment method.
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| CH670785A5 (en) * | 1987-04-03 | 1989-07-14 | Charmilles Technologies | |
| JP3376174B2 (en) * | 1995-07-04 | 2003-02-10 | 三菱電機株式会社 | Surface treatment method and apparatus by electric discharge machining |
| JP2000160361A (en) * | 1998-11-30 | 2000-06-13 | Mitsubishi Electric Corp | Surface treatment by discharge and surface treating device by discharge |
| JP2004237413A (en) * | 2003-02-07 | 2004-08-26 | Mitsubishi Electric Corp | Electric discharge machine |
| JP4144669B2 (en) * | 2004-03-05 | 2008-09-03 | 独立行政法人産業技術総合研究所 | Method for producing nanobubbles |
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