JP6524860B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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JP6524860B2
JP6524860B2 JP2015166148A JP2015166148A JP6524860B2 JP 6524860 B2 JP6524860 B2 JP 6524860B2 JP 2015166148 A JP2015166148 A JP 2015166148A JP 2015166148 A JP2015166148 A JP 2015166148A JP 6524860 B2 JP6524860 B2 JP 6524860B2
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phosphor
light emitting
emitting device
fluorescent
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JP2016072614A (en
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真規子 岩浅
真規子 岩浅
幸治 梶川
幸治 梶川
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Nichia Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Description

本開示は、発光装置に関する。   The present disclosure relates to a light emitting device.

発光ダイオード(Light emitting diode:LED)と蛍光体とを組合せて白色、電球色等に発光する発光装置が種々開発されている。このような発光装置として、青色を発光する半導体発光素子及び黄色等を発光する蛍光体を用いる方式がよく知られている。このような半導体発光素子及び蛍光体を用いる発光装置は、蛍光ランプ等の照明、車載照明、ディスプレイ、液晶用バックライト等の幅広い分野への適用が求められている。特に、照明用途では発光効率とともに、照射物の色の見え方の指数である演色性が高いものが求められている。演色性について、1986年にCIE(国際照明委員会)は蛍光ランプ等が具備すべき演色性の指針を公表している。その指針によれば、使用される場所に応じた好ましい平均演色評価数(Ra)は、一般作業を行う工場では60以上80未満、住宅、ホテル、レストラン、店舗、オフィス、学校、病院、精密作業を行う工場などでは80以上90未満、臨床検査を行う場所、美術館などでは90以上とされている。   Various light emitting devices have been developed which emit white light, bulb color and the like by combining a light emitting diode (LED) and a phosphor. As such a light emitting device, a system using a semiconductor light emitting element emitting blue light and a phosphor emitting yellow or the like is well known. Light emitting devices using such semiconductor light emitting elements and phosphors are required to be applied to a wide range of fields such as illuminations such as fluorescent lamps, vehicle illuminations, displays, and backlights for liquid crystals. In particular, in illumination applications, those having high color rendering, which is an index of how the color of an irradiated object is seen, are required together with luminous efficiency. Regarding color rendering, in 1986 the CIE (International Commission on Illumination) published guidelines on color rendering that fluorescent lamps etc should have. According to the guidelines, the preferred average color rendering index (Ra) according to the location to be used is 60 or more and less than 80 for factories that carry out general work, housing, hotels, restaurants, stores, offices, schools, hospitals, precision work In factories that do 80 or more and less than 90, places where clinical examinations are performed, and 90 or more in museums and the like.

上記に関連して、赤色発光蛍光体として、青色域に励起帯を有し、発光ピークの半値幅の狭いKSiF:Mn等の組成を有するMn4+で賦活されたフッ化物蛍光体が知られている(例えば、特許文献1参照)。また、Mn4+で賦活された赤色蛍光体とEu2+で賦活された赤色蛍光体とを含む白色発光装置が開示され(例えば、特許文献2参照)、発光効率に優れるとされている。 In relation to the above, as a red light emitting phosphor, an Mn 4+ activated fluoride phosphor having a composition such as K 2 SiF 6 : Mn having an excitation band in the blue region and a narrow half width of the light emission peak is It is known (for example, refer to patent documents 1). In addition, a white light emitting device including a red phosphor activated with Mn 4+ and a red phosphor activated with Eu 2+ is disclosed (see, for example, Patent Document 2), and is considered to be excellent in luminous efficiency.

特開2010−209311号公報Unexamined-Japanese-Patent No. 2010-209311 特開2012−104814号公報JP 2012-104814 A

しかしながら、特開2012−104814号公報に記載された白色発光装置では、充分な演色性と充分な光束とを両立させることが困難な場合があった。本開示の一実施形態は、演色性と光束とを高いレベルで両立することができる発光装置を提供することを課題とする。   However, in the white light emitting device described in Japanese Patent Application Laid-Open No. 2012-104814, it has been difficult in some cases to achieve both sufficient color rendering and sufficient luminous flux. An embodiment of the present disclosure is to provide a light emitting device capable of achieving both color rendering and luminous flux at a high level.

前記課題を解決するための具体的手段は以下の通りである。
本開示の態様は、430nm以上470nm以下の波長範囲に極大発光波長を有する半導体発光素子と、620nm以上650nm未満の波長範囲に極大発光波長を有する赤色蛍光体である第一蛍光体と、600nm以上620nm未満の波長範囲に極大発光波長を有する赤色蛍光体である第二蛍光体と、650nm以上の波長範囲に極大発光波長を有する赤色蛍光体である第三蛍光体と、500nm以上565nm以下の波長範囲に極大発光波長を有する第四蛍光体と、を備え、第一蛍光体は、その組成が下記式(I)
[M1−aMn4+ ]・・・(I)
(Aは、K、Li、Na、Rb、Cs及びNH からなる群から選ばれる少なくとも1種であり、Mは、第4族元素及び第14族元素からなる群から選ばれる少なくとも1種の元素であり、aは0<a<0.2を満たす数を示す。)で表される発光装置である。
The specific means for solving the said subject are as follows.
According to an aspect of the present disclosure, a semiconductor light emitting device having a maximum emission wavelength in a wavelength range of 430 nm to 470 nm, a first phosphor that is a red phosphor having a maximum emission wavelength in a wavelength range of 620 nm to less than 650 nm, and 600 nm or more A second phosphor which is a red phosphor having a maximum emission wavelength in a wavelength range of less than 620 nm, a third phosphor which is a red phosphor having a maximum emission wavelength in a wavelength range of 650 nm or more, and a wavelength of 500 nm to 565 nm A fourth phosphor having a maximum emission wavelength in the range, and the first phosphor has a composition represented by the following formula (I):
A 2 [M 1-a Mn 4+ a F 6 ] (I)
(A is at least one member selected from the group consisting of K + , Li + , Na + , Rb + , Cs + and NH 4 + , and M is a group consisting of a Group 4 element and a Group 14 element At least one element selected, and a represents a number satisfying 0 <a <0.2.

本開示の一実施形態によれば、演色性と光束とを高いレベルで両立することができる発光装置を提供することができる。   According to one embodiment of the present disclosure, it is possible to provide a light emitting device capable of achieving both color rendering and luminous flux at a high level.

本実施形態に係る発光装置の一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the light-emitting device which concerns on this embodiment. 本実施形態に係る発光装置の別の一例を示す概略断面図である。It is a schematic sectional drawing which shows another example of the light-emitting device which concerns on this embodiment. 本実施形態に係る発光装置の別の一例を示す概略断面図である。It is a schematic sectional drawing which shows another example of the light-emitting device which concerns on this embodiment. 本実施形態に係る発光装置の別の一例を示す概略断面図である。It is a schematic sectional drawing which shows another example of the light-emitting device which concerns on this embodiment. 本実施形態に係る発光装置の別の一例を示す概略断面図である。It is a schematic sectional drawing which shows another example of the light-emitting device which concerns on this embodiment. 本実施形態に係る発光装置の別の一例を示す概略断面図である。It is a schematic sectional drawing which shows another example of the light-emitting device which concerns on this embodiment. 比較例1及び2に係る発光装置の発光スペクトルである。It is an emission spectrum of the light-emitting device which concerns on the comparative example 1 and 2. FIG. 実施例1から4及び比較例1に係る発光装置の発光スペクトルである。FIG. 6 shows emission spectra of light emitting devices according to Examples 1 to 4 and Comparative Example 1. FIG.

以下、本発明の実施の形態について詳細に説明する。ただし、以下に示す実施の形態は、本発明の技術思想を例示するものであって、本発明は以下に限定されない。以下の実施の形態に記載されている構成部材の寸法、材質、形状、数量、その相対的配置等は特に特定的な記載がない限りは、本発明の範囲をそれのみに限定する趣旨ではなく、単なる説明例にすぎない。なお、各図面が示す部材の大きさ、数量、位置関係等は、説明を明確にするため誇張していることがある。また、色名と色度座標との関係、光の波長範囲と単色光の色名との関係等は、JIS Z8110に従う。また、本明細書において「工程」との語は、独立した工程だけではなく、他の工程と明確に区別できない場合であってもその工程の所期の目的が達成されれば、本用語に含まれる。また、組成物中の各成分の含有量は、組成物中に各成分に該当する物質が複数存在する場合、特に断らない限り、組成物中に存在する当該複数の物質の合計量を意味する。   Hereinafter, embodiments of the present invention will be described in detail. However, the embodiments shown below illustrate the technical concept of the present invention, and the present invention is not limited to the following. The dimensions, materials, shapes, numbers, relative arrangements, etc. of constituent members described in the following embodiments are not intended to limit the scope of the present invention thereto unless specifically described otherwise. , Is just an illustrative example. Note that the size, number, positional relationship, etc. of members shown in each drawing may be exaggerated for the sake of clarity. Further, the relationship between the color name and the chromaticity coordinates, the relationship between the light wavelength range and the color name of the monochromatic light, etc. conform to JIS Z8110. In addition, in the present specification, the term "process" is not limited to an independent process, and can be used as the term if the intended purpose of the process is achieved even if it can not be clearly distinguished from other processes. included. In addition, when there are a plurality of substances corresponding to each component in the composition, the content of each component in the composition means the total amount of the plurality of substances present in the composition unless otherwise specified. .

<発光装置>
本実施形態の発光装置は、430nm以上470nm以下の波長範囲に極大発光波長を有する半導体発光素子と、620nm以上650nm未満の波長範囲に極大発光波長を有する赤色蛍光体である第一蛍光体と、600nm以上620nm未満の波長範囲に極大発光波長を有する赤色蛍光体である第二蛍光体と、650nm以上の波長範囲に極大発光波長を有する赤色蛍光体である第三蛍光体と、500nm以上565nm以下の波長範囲に極大発光波長を有する第四蛍光体と、を備え、第一蛍光体は、その組成が下記式(I)で表される発光装置である。
[M1−aMn4+ ]・・・(I)
式(I)中、Aは、K、Li、Na、Rb、Cs及びNH からなる群から選ばれる少なくとも1種であり、Mは、第4族元素及び第14族元素からなる群から選ばれる少なくとも1種の元素であり、aは0<a<0.2を満たす数を示す。
<Light-emitting device>
The light emitting device of the present embodiment includes: a semiconductor light emitting element having a maximum emission wavelength in a wavelength range of 430 nm to 470 nm; a first phosphor which is a red phosphor having a maximum emission wavelength in a wavelength range of 620 nm to less than 650 nm; A second phosphor which is a red phosphor having a maximum emission wavelength in a wavelength range of 600 nm to less than 620 nm, a third phosphor which is a red phosphor having a maximum emission wavelength in a wavelength range of 650 nm or more, And a fourth phosphor having a maximum light emission wavelength in the wavelength range of (1), wherein the first phosphor is a light emitting device whose composition is represented by the following formula (I).
A 2 [M 1-a Mn 4+ a F 6 ] (I)
In the formula (I), A is at least one member selected from the group consisting of K + , Li + , Na + , Rb + , Cs + and NH 4 + , and M is a Group 4 element and Group 14 At least one element selected from the group consisting of elements, a represents a number satisfying 0 <a <0.2.

発光装置が、500nm以上565nm以下の波長範囲に極大発光波長を有し、緑から黄緑色に発光する第四蛍光体に加えて、620nm以上650nm未満の波長範囲に極大発光波長を有し、赤色に発光し、特定の化学組成である第一蛍光体、600nm以上620nm未満の波長範囲に極大発光波長を有し、赤色にする第二蛍光体及び650nm以上の波長範囲に極大発光波長を有し、赤色に発光する第三蛍光体の少なくとも3種の赤色蛍光体を含むことで、優れた演色性と優れた光束とを両立することができる。
さらに第一蛍光体は、視感度の低い長波域の深赤色成分が少ないため、優れた発光効率を達成可能で、照明用途に用いる場合は発光効率と演色性のバランスにも優れる。また、第一蛍光体に加えて、第二蛍光体及び第三蛍光体である赤色蛍光体を少なくとも2種含むことで、発光装置を製造する際に、蛍光体が分散された樹脂の流動性が低下することを抑制することができ、効率的に発光装置を製造することができる。
The light emitting device has a maximum emission wavelength in the wavelength range of 500 nm to 565 nm and has a maximum emission wavelength in the wavelength range of 620 nm to less than 650 nm in addition to the fourth phosphor emitting green to yellowish green; The first phosphor with a specific chemical composition, the maximum emission wavelength in the wavelength range of 600 nm to less than 620 nm, the second phosphor to be red, and the maximum emission wavelength in the wavelength range of 650 nm or more By including at least three types of red phosphors of the third phosphor that emits red, it is possible to achieve both excellent color rendering properties and excellent luminous flux.
Furthermore, since the first phosphor has less deep red components in a long wave region with low visibility, excellent luminous efficiency can be achieved, and when used for lighting applications, the first phosphor is also excellent in the balance between luminous efficiency and color rendering. In addition to the first phosphor, by including at least two types of red phosphors, which are the second phosphor and the third phosphor, the fluidity of the resin in which the phosphor is dispersed when the light emitting device is manufactured. Can be suppressed, and the light emitting device can be manufactured efficiently.

本実施形態の発光装置は、平均演色性評価数Raが80以上であることが好ましく、82以上であることがより好ましい。なお、平均演色性評価数RaはJIS Z 8726 光源の演色性評価方法の規定に準じて測定される。
また発光装置の色温度は特に制限されず、目的等に応じて適宜選択される。発光装置の色温度は、例えば、2500K以上3500K以下が好ましい。発光装置の色温度は、例えば、第一蛍光体、第二蛍光体、第三蛍光体及び第四蛍光体(以下、まとめて単に「蛍光体」ともいう。)の種類及び含有量を適宜選択することで調整することができる。
In the light emitting device of the present embodiment, the average color rendering index Ra is preferably 80 or more, and more preferably 82 or more. The average color rendering index Ra is measured in accordance with JIS Z 8726, the definition of the color rendering evaluation method of a light source.
Further, the color temperature of the light emitting device is not particularly limited, and is appropriately selected according to the purpose and the like. The color temperature of the light emitting device is preferably, for example, 2500 K or more and 3500 K or less. The color temperature of the light emitting device is appropriately selected from, for example, the type and the content of the first phosphor, the second phosphor, the third phosphor and the fourth phosphor (hereinafter collectively referred to simply as "phosphor"). It can be adjusted by doing.

(半導体発光素子)
発光装置は430nm以上470nm以下の波長範囲に極大発光波長を有する半導体発光素子(以下、単に「発光素子」ともいう。)を備える。半導体発光素子を励起光源として用いることによって、高効率で入力に対する出力のリニアリティが高く、機械的衝撃にも強い安定した発光装置を得ることができる。
(Semiconductor light emitting device)
The light emitting device includes a semiconductor light emitting element (hereinafter, also simply referred to as “light emitting element”) having a maximum light emission wavelength in a wavelength range of 430 nm to 470 nm. By using a semiconductor light emitting element as an excitation light source, it is possible to obtain a stable light emitting device that is highly efficient, has high output linearity with respect to an input, and is resistant to mechanical shock.

半導体発光素子は、可視光の短波長領域である430nm以上470nm以下の光を発するもの、すなわち、430nm以上470nm以下の波長範囲に発光ピーク波長(極大発光波長)を有するものを使用する。半導体発光素子は、発光ピーク波長を好ましくは440nm以上460nm以下の波長範囲に有する。これにより、発光装置に含まれる蛍光体を効率よく励起し、可視光を有効活用することができる。また当該波長範囲の励起光源を用いることにより、発光強度が高い発光装置を提供することができる。   As the semiconductor light emitting element, one emitting light of 430 nm or more and 470 nm or less which is a short wavelength region of visible light, that is, one having an emission peak wavelength (maximum emission wavelength) in a wavelength range of 430 nm or more and 470 nm or less is used. The semiconductor light emitting device preferably has an emission peak wavelength in a wavelength range of 440 nm or more and 460 nm or less. Thereby, the fluorescent substance contained in a light-emitting device can be excited efficiently, and visible light can be used effectively. In addition, by using an excitation light source in the above wavelength range, a light emitting device with high emission intensity can be provided.

半導体発光素子としては、例えば、青色から緑色の発光素子として、窒化物系半導体(InAlGa1−X−YN、0≦X、0≦Y、X+Y≦1)を用いたものを用いることができる。 As the semiconductor light-emitting device, for example, as a green light emitting element from the blue, that using a nitride semiconductor (In X Al Y Ga 1- X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) It can be used.

(第一蛍光体)
第一蛍光体は赤色蛍光体であり、その蛍光スペクトルのピーク(極大発光波長)を620nm以上650nm未満の波長範囲に有し、式(I)で表される化学組成を有する。
[M1−aMn4+ ]・・・(I)
Aは、K、Li、Na、Rb、Cs及びNH からなる群から選択される少なくとも1種の陽イオンであり、Mは、第4族元素及び第14族元素からなる群から選択される少なくとも1種の元素を示し、aは0<a<0.2を満たす数を示す。
(First phosphor)
The first phosphor is a red phosphor, has a peak (maximum emission wavelength) of its fluorescence spectrum in a wavelength range of 620 nm or more and less than 650 nm, and has a chemical composition represented by the formula (I).
A 2 [M 1-a Mn 4+ a F 6 ] (I)
A is at least one cation selected from the group consisting of K + , Li + , Na + , Rb + , Cs + and NH 4 + , and M is a group 4 element or group 14 element And at least one element selected from the group consisting of: a represents a number satisfying 0 <a <0.2;

第一蛍光体は、Mn4+で賦活された赤色蛍光体であり、可視光の短波長領域の光を吸収して赤色に発光可能である。可視光の短波長領域の光である励起光は、主に青色領域の光であることが好ましい。 The first phosphor is a red phosphor activated with Mn 4+ and is capable of absorbing light in the short wavelength region of visible light to emit red light. It is preferable that the excitation light which is the light of the short wavelength region of visible light is mainly the light of a blue region.

また第一蛍光体の発光スペクトルの半値幅は、狭いことが好ましく、具体的には10nm以下であることが好ましい。   The half width of the emission spectrum of the first phosphor is preferably narrow, and specifically 10 nm or less.

式(I)におけるAは、リチウムイオン(Li)、ナトリウムイオン(Na)、カリウムイオン(K)、ルビジウムイオン(Rb)、セシウムイオン(Cs)及びアンモニウムイオン(NH )からなる群から選択される少なくとも1種の陽イオンである。中でもAは、Li、Na、K、Rb及びCsからなる群から選択され、かつNa及びKの少なくとも一方を含む少なくとも1種の陽イオンであることが好ましい。またAは、Li、Na、K、Rb、Cs及びNH からなる群から選択され、Kを含む少なくとも1種の陽イオンであることもまた好ましく、Kを主成分とするアルカリ金属等の陽イオンであることがより好ましい。ここで「Kを主成分とする」とは、一般式(I)のAにおけるKの含有率が80モル%以上であることを意味し、90モル%以上であることが好ましく、95モル%以上であることがより好ましい。 A in the formula (I) is lithium ion (Li + ), sodium ion (Na + ), potassium ion (K + ), rubidium ion (Rb + ), cesium ion (Cs + ) and ammonium ion (NH 4 + ) And at least one cation selected from the group consisting of Among them, A is preferably at least one cation selected from the group consisting of Li + , Na + , K + , Rb + and Cs + and containing at least one of Na + and K + . The A is, Li +, Na +, K +, Rb +, is selected from Cs + and the group consisting of NH 4 +, it is also preferably at least one cation containing K +, mainly K + It is more preferable that it is a cation such as an alkali metal as a component. Here, “having K + as the main component” means that the content of K + in A of the general formula (I) is 80 mol% or more, and is preferably 90 mol% or more, 95 It is more preferable that it is mol% or more.

式(I)におけるMは、第4族元素及び第14族元素からなる群から選択される少なくとも1種であり、Mは、発光特性の観点から、チタン(Ti)、ジルコニウム(Zr)、ハフニウム(Hf)、ケイ素(Si)、ゲルマニウム(Ge)及びスズ(Sn)からなる群から選択される少なくとも1種であることが好ましく、ケイ素(Si)、又はケイ素(Si)及びゲルマニウム(Ge)を含むことがより好ましく、ケイ素(Si)、又はケイ素(Si)及びゲルマニウム(Ge)であることが更に好ましい。
Mがケイ素(Si)、又はケイ素(Si)及びゲルマニウム(Ge)を含む場合、Si及びGeの少なくとも一方の一部が、Ti、Zr及びHfを含む第4族元素、並びにC及びSnを含む第14族元素からなる群から選択される少なくとも1種で置換されていてもよい。
第一蛍光体は、1種単独でも、2種以上を組合せて用いてもよい。
M in the formula (I) is at least one selected from the group consisting of Group 4 elements and Group 14 elements, and M is titanium (Ti), zirconium (Zr), hafnium from the viewpoint of light emission characteristics. (Hf), silicon (Si), germanium (Ge) and tin (Sn) are preferably at least one selected from the group consisting of silicon (Si) or silicon (Si) and germanium (Ge) It is more preferable to include, and more preferable to be silicon (Si) or silicon (Si) and germanium (Ge).
When M contains silicon (Si) or silicon (Si) and germanium (Ge), part of at least one of Si and Ge contains a group 4 element including Ti, Zr and Hf, and C and Sn It may be substituted by at least one selected from the group consisting of Group 14 elements.
The first phosphor may be used alone or in combination of two or more.

(第二蛍光体)
第二蛍光体は赤色蛍光体であり、その蛍光スペクトルの発光ピーク波長(極大発光波長)を600nm以上620nm未満の波長範囲に有する。第二蛍光体は、可視光の短波長領域の光を吸収して赤色に発光可能であることが好ましく、可視光の短波長領域の光である励起光は、主に青色領域の光であることがより好ましい。第二蛍光体における励起光の好ましい範囲は第一蛍光体と同様である。
第二蛍光体の極大発光波長は、演色性と光束の観点から、600nm以上610nm以下であることが好ましい。
(Second phosphor)
The second phosphor is a red phosphor and has an emission peak wavelength (maximum emission wavelength) of its fluorescence spectrum in a wavelength range of 600 nm or more and less than 620 nm. The second phosphor preferably absorbs light in the short wavelength range of visible light and can emit red light, and the excitation light which is light in the short wavelength range of visible light is mainly light in the blue range Is more preferred. The preferable range of the excitation light in the second phosphor is the same as that of the first phosphor.
The maximum emission wavelength of the second phosphor is preferably 600 nm or more and 610 nm or less from the viewpoint of color rendering and luminous flux.

第二蛍光体は、Eu2+で賦活されたアルカリ土類ケイ窒化物蛍光体であることが好ましく、その化学組成が下記式(II)で表されることがより好ましい。
(Ba,Sr,Ca)Si:Eu・・・(II)
第二蛍光体は、1種単独でも、2種以上を組合せて用いてもよい。なお、この蛍光体の詳細については、例えば、特開2006−152296号公報を参照できる。
The second phosphor is preferably an alkaline earth silicon nitride phosphor activated with Eu 2+ , and more preferably the chemical composition is represented by the following formula (II).
(Ba, Sr, Ca) 2 Si 5 N 8: Eu ··· (II)
The second phosphor may be used alone or in combination of two or more. In addition, about the detail of this fluorescent substance, Unexamined-Japanese-Patent No. 2006-152296 can be referred, for example.

(第三蛍光体)
第三蛍光体は赤色蛍光体であり、その蛍光スペクトルの発光ピーク波長(極大発光波長)を650nm以上の波長範囲に有する。第三蛍光体の極大発光波長は、発光効率の観点から、650nm以上670nm以下であることが好ましい。第三蛍光体は、可視光の短波長領域の光を吸収して赤色に発光可能であることが好ましく、可視光の短波長領域の光である励起光は、主に青色領域の光であることがより好ましい。第三蛍光体における励起光の好ましい範囲は第一蛍光体と同様である。
第三蛍光体の極大発光波長は、演色性と光束の観点から、650nm以上660nm以下であることもまた好ましい。
(Third phosphor)
The third phosphor is a red phosphor, and has a light emission peak wavelength (maximum light emission wavelength) of its fluorescence spectrum in a wavelength range of 650 nm or more. The maximum emission wavelength of the third phosphor is preferably 650 nm or more and 670 nm or less from the viewpoint of light emission efficiency. The third phosphor preferably absorbs light in the short wavelength range of visible light and can emit red light, and the excitation light which is light in the short wavelength range of visible light is mainly light in the blue range Is more preferred. The preferred range of excitation light in the third phosphor is the same as in the first phosphor.
The maximum emission wavelength of the third phosphor is also preferably 650 nm or more and 660 nm or less from the viewpoint of color rendering and luminous flux.

第三蛍光体は、Eu2+で賦活されたアルカリ土類ケイ窒化物蛍光体であることが好ましく、その化学組成が下記式(III)で表されることがより好ましい。
CaAlSiN:Eu・・・(III)
第三蛍光体は、1種単独でも、2種以上を組合せて用いてもよい。なお、この蛍光体の詳細については、例えば、国際公開WO2006/077740号を参照できる。
The third phosphor is preferably an alkaline earth silicon nitride phosphor activated with Eu 2+ , and more preferably the chemical composition is represented by the following formula (III).
CaAlSiN 3 : Eu (III)
The third phosphor may be used alone or in combination of two or more. For details of this phosphor, for example, International Publication WO2006 / 077740 can be referred to.

発光装置は、赤色蛍光体として少なくとも第一蛍光体、第二蛍光体及び第三蛍光体を含むが、必要に応じてその他の赤色蛍光体を含んでいてもよい。その他の赤色蛍光体としては、例えば、620nm以上650nm未満の波長範囲に極大発光波長を有し、化学組成が式(I)以外の化合物を挙げることができる。その他の赤色蛍光体として具体的には、(Ca,Sr,Ba)S:Eu、Sr(Si,Al)10(O,N)14:Eu等を挙げることができる。
発光装置がその他の赤色蛍光体を含む場合、その含有率は赤色蛍光体の総質量中に20質量%以下であり、10質量%以下が好ましい。その他の赤色蛍光体の含有率の下限値は特に制限されず、例えば0.5質量%である。
The light emitting device includes at least a first phosphor, a second phosphor and a third phosphor as a red phosphor, but may include other red phosphors as needed. Examples of other red phosphors include compounds having a maximum emission wavelength in the wavelength range of 620 nm or more and less than 650 nm, and having a chemical composition other than that of formula (I). Specifically Other red phosphor, (Ca, Sr, Ba) S: can be exemplified Eu or the like: Eu, Sr 2 (Si, Al) 10 (O, N) 14.
When the light emitting device contains other red phosphors, the content thereof is 20% by mass or less in the total mass of the red phosphors, and preferably 10% by mass or less. The lower limit of the content of the other red phosphors is not particularly limited, and is, for example, 0.5% by mass.

発光装置に含まれる第一蛍光体、第二蛍光体及び第三蛍光体の含有量は特に制限されない。例えば、赤色蛍光体の総質量中における第一蛍光体の含有率は、演色性の観点から、80質量%以上99質量%以下が好ましく、85質量%以上99質量%以下がより好ましく、90質量%以上99質量%以下がより好ましく、95質量%以上99質量%以下が更に好ましい。
また、第二蛍光体の第三蛍光体に対する質量比は、演色性と光束の観点から、30:70以上70:30以下が好ましい。
特に、赤色蛍光体の総質量中における第一蛍光体の含有率が90質量%以上99質量%以下である場合には、第二蛍光体の第三蛍光体に対する質量比が30:70以上70:30以下であることが好ましい。
また、赤色蛍光体の総質量中における第一蛍光体の含有率が85質量%以上90質量%未満である場合には、第二蛍光体の第三蛍光体に対する質量比が30:70以上50:50未満であることが好ましい。
The content of the first phosphor, the second phosphor and the third phosphor contained in the light emitting device is not particularly limited. For example, from the viewpoint of color rendering, the content of the first phosphor in the total mass of the red phosphor is preferably 80% by mass to 99% by mass, more preferably 85% by mass to 99% by mass, and 90% by mass. % Or more and 99 mass% or less is more preferable, and 95 mass% or more and 99 mass% or less is more preferable.
The mass ratio of the second phosphor to the third phosphor is preferably 30:70 or more and 70:30 or less from the viewpoint of color rendering and luminous flux.
In particular, when the content of the first phosphor in the total mass of the red phosphor is 90% by mass to 99% by mass, the mass ratio of the second phosphor to the third phosphor is 30:70 to 70. It is preferable that it is: 30 or less.
When the content of the first phosphor in the total mass of the red phosphor is 85% by mass or more and less than 90% by mass, the mass ratio of the second phosphor to the third phosphor is 30: 70 or more and 50 Preferably less than 50.

それぞれの赤色蛍光体の粒径及び粒度分布は特に制限されないが、発光強度の観点から、単一ピークの粒度分布を示すことが好ましく、分布幅の狭い単一ピークの粒度分布であることがより好ましい。
赤色蛍光体の粒径は例えば、それぞれ体積平均粒子径として1μm以上100μm以下であり、5μm以上70μm以下であることが好ましい。
Although the particle size and particle size distribution of each red phosphor are not particularly limited, it is preferable to show a single peak particle size distribution from the viewpoint of emission intensity, and it is preferable that the particle size distribution of a single peak is narrow in distribution width. preferable.
The particle diameter of the red phosphor is, for example, 1 μm to 100 μm as volume average particle diameter, and preferably 5 μm to 70 μm.

(第四蛍光体)
第四蛍光体は、その蛍光スペクトルのピーク(極大発光波長)を500nm以上565nm以下の波長範囲に有する。第四蛍光体の極大発光波長は、演色性と光束の観点から、550nm以上560nm以下であることが好ましい。第四蛍光体は、可視光の短波長領域の光を吸収して黄色から緑色に発光可能である。可視光の短波長領域の光である励起光は、主に青色領域の光であることが好ましい。
(Fourth phosphor)
The fourth phosphor has a peak of the fluorescence spectrum (maximum emission wavelength) in a wavelength range of 500 nm or more and 565 nm or less. The maximum emission wavelength of the fourth phosphor is preferably 550 nm or more and 560 nm or less from the viewpoint of color rendering and luminous flux. The fourth phosphor absorbs light in the short wavelength region of visible light and can emit yellow to green light. It is preferable that the excitation light which is the light of the short wavelength region of visible light is mainly the light of a blue region.

第四蛍光体は、Ce 3+ で賦活された複合金属酸化物であることが好ましく、その化学組成が下記式(IV)から(VI)のいずれかで表される化合物からなる群から選択される少なくとも1種であることがより好ましく、化学組成が式(VI)で表される化合物からなる群から選択される少なくとも1種であることがさらに好ましく、化学組成が式(VIa)で表される化合物からなる群から選択される少なくとも1種であることが特に好ましい。
LuAl12:Ce・・・(IV)
(Al,Ga)12:Ce・・・(V)
(Lu,Y,Gd,Tb)(Al,Ga)12:Ce・・・(VI)
(Al,Ga)12:Ce・・・(VIa)
第四蛍光体は、1種単独でも、2種以上を組合せて用いてもよい。
The fourth phosphor is preferably a composite metal oxide activated with Ce 3+ , and its chemical composition is selected from the group consisting of compounds represented by any of the following formulas (IV) to (VI) It is more preferably at least one kind, further preferably at least one kind selected from the group consisting of compounds represented by formula (VI), and the chemical composition is expressed by formula (VIa) It is particularly preferable that it is at least one selected from the group consisting of compounds.
Lu 3 Al 5 O 12 : Ce (IV)
Y 3 (Al, Ga) 5 O 12 : Ce (V)
(Lu, Y, Gd, Tb) 3 (Al, Ga) 5 O 12 : Ce (... (VI)
Y 3 (Al, Ga) 5 O 12 : Ce ... (VIa)
The fourth phosphor may be used alone or in combination of two or more.

発光装置に含まれる第四蛍光体の含有量は特に制限されず、発光装置の色温度等の諸特性が所望の値となるように適宜選択すればよい。   The content of the fourth phosphor contained in the light emitting device is not particularly limited, and may be appropriately selected so that various characteristics such as the color temperature of the light emitting device have desired values.

第四蛍光体の粒径及び粒度分布は特に制限されないが、発光強度の観点から、単一ピークの粒度分布を示すことが好ましい。
第四蛍光体の粒径は例えば、体積平均粒子径として1μm以上100μm以下であり、5μm以上70μm以下であることが好ましい。
The particle size and particle size distribution of the fourth phosphor are not particularly limited, but it is preferable to exhibit a single peak particle size distribution from the viewpoint of emission intensity.
The particle diameter of the fourth phosphor is, for example, 1 μm or more and 100 μm or less as a volume average particle diameter, and preferably 5 μm or more and 70 μm or less.

発光装置に含まれる蛍光体は、例えば半導体発光素子を被覆する蛍光材料に含有させればよい。蛍光材料は蛍光体と樹脂とを含むことができる。蛍光材料中の蛍光体の含有量は特に制限されず、発光装置としての諸特性に応じて適宜選択することができる。蛍光体の総含有量は蛍光材料に含まれる樹脂100質量部に対して、例えば、50質量部以上170質量部以下とすることができる。   The phosphor contained in the light emitting device may be contained, for example, in a fluorescent material that covers the semiconductor light emitting element. The fluorescent material can include a phosphor and a resin. The content of the phosphor in the fluorescent material is not particularly limited, and can be appropriately selected according to the various characteristics of the light emitting device. The total content of the phosphor can be, for example, 50 parts by mass or more and 170 parts by mass or less with respect to 100 parts by mass of the resin contained in the fluorescent material.

発光装置は、蛍光材料中にフィラーを含んでいてもよい。フィラーとしては、シリカ、チタニア、ジルコニア等を挙げることができる。フィラーは1種単独でも2種以上を組合せて用いてもよい。
発光装置が蛍光材料中にフィラーを含む場合、フィラーの総含有量は蛍光材料に含まれる樹脂100質量部に対して、例えば、0.5質量部以上20質量部以下とすることができる。
The light emitting device may include a filler in the fluorescent material. Examples of the filler include silica, titania, zirconia and the like. The fillers may be used alone or in combination of two or more.
When the light emitting device contains a filler in the fluorescent material, the total content of the filler can be, for example, 0.5 parts by mass or more and 20 parts by mass or less with respect to 100 parts by mass of the resin contained in the fluorescent material.

発光装置の形式は特に制限されず、通常用いられる形式から適宜選択することができる。発光装置の形式としては、ピン貫通型、表面実装型等を挙げることができる。一般にピン貫通型とは、実装基板に設けられたスルーホールに発光装置のリード(ピン)を貫通させて発光装置を固定するものを指す。また表面実装型とは、実装基板の表面において発光装置のリードを固定するものを指す。   The type of the light emitting device is not particularly limited, and can be appropriately selected from commonly used types. As a type of light emitting device, a pin penetration type, a surface mounting type, etc. can be mentioned. In general, the through-pin type refers to one in which a light emitting device is fixed by penetrating a lead (pin) of the light emitting device in a through hole provided in a mounting substrate. The surface mount type refers to one that fixes the leads of the light emitting device on the surface of the mounting substrate.

以下、本実施形態に係る発光装置の一例を図面に基づいて説明する。図1は、本実施形態に係る発光装置の一例を示す概略断面図である。この発光装置は、表面実装型発光装置の一例である。
発光装置100は、可視光の短波長側(例えば380nm以上485nm以下)の光を発し、発光ピーク波長が430nm以上470nm以下である窒化ガリウム系化合物半導体の発光素子10と、発光素子10を載置する成形体40と、を有する。成形体40は第1のリード20と第2のリード30と、熱可塑性樹脂又は熱硬化性樹脂とが一体成形されている。成形体40は底面と側面を持つ凹部を形成しており、凹部の底面に発光素子10が載置されている。発光素子10は一対の正負の電極を有しており、その一対の正負の電極は第1のリード20及び第2のリード30とワイヤ60を介して電気的に接続されている。発光素子10は蛍光部材50により被覆されている。蛍光部材50はエポキシ樹脂やシリコーン樹脂、エポキシ変性シリコーン樹脂、変性シリコーン樹脂等の熱硬化性樹脂を含むことが好ましい。蛍光部材50は発光素子10からの光を波長変換する蛍光体70を含有し、それぞれの蛍光体70は第一蛍光体、第二蛍光体、第三蛍光体又は第四蛍光体であり、これらの蛍光体を所定の含有比率で含んでいる。発光装置100においては、発光素子10からの光と、発光素子10からの光で励起された蛍光体70からの光との混合光が、蛍光部材50の発光面から取り出される。なお、蛍光部材50について、その発光面は、第一のリード20及び第二のリード30が配置された側とは反対側に位置する。
Hereinafter, an example of a light emitting device according to the present embodiment will be described based on the drawings. FIG. 1 is a schematic cross-sectional view showing an example of a light emitting device according to the present embodiment. This light emitting device is an example of a surface mounted light emitting device.
The light emitting device 100 emits the light emitting element 10 and the light emitting element 10 of a gallium nitride based compound semiconductor that emits light on the short wavelength side (for example, 380 nm or more and 485 nm or less) of visible light and has an emission peak wavelength of 430 nm or more and 470 nm or less And a formed body 40. In the molded body 40, the first lead 20 and the second lead 30, and a thermoplastic resin or a thermosetting resin are integrally molded. The molded body 40 forms a recess having a bottom surface and a side surface, and the light emitting element 10 is mounted on the bottom surface of the recess. The light emitting element 10 has a pair of positive and negative electrodes, and the pair of positive and negative electrodes is electrically connected to the first lead 20 and the second lead 30 through the wire 60. The light emitting element 10 is covered by a fluorescent member 50. The fluorescent member 50 preferably contains a thermosetting resin such as an epoxy resin, a silicone resin, an epoxy-modified silicone resin, or a modified silicone resin. The fluorescent member 50 contains the fluorescent substance 70 which wavelength-converts the light from the light emitting element 10, and each fluorescent substance 70 is a 1st fluorescent substance, a 2nd fluorescent substance, a 3rd fluorescent substance, or a 4th fluorescent substance, The phosphor of the above is contained at a predetermined content ratio. In the light emitting device 100, mixed light of the light from the light emitting element 10 and the light from the phosphor 70 excited by the light from the light emitting element 10 is extracted from the light emitting surface of the fluorescent member 50. The light emitting surface of the fluorescent member 50 is located on the side opposite to the side on which the first lead 20 and the second lead 30 are disposed.

蛍光部材50は、発光装置100の凹部内に載置された発光素子10を覆うように透光性の樹脂やガラスで充填されて形成される。製造の容易性を考慮すると、蛍光部材の材料は、透光性樹脂が好ましい。透光性樹脂は、耐光性を考慮してシリコーン樹脂組成物を使用することが好ましいが、エポキシ樹脂組成物、アクリル樹脂組成物等の絶縁樹脂組成物を用いることもできる。また、蛍光部材50には第一蛍光体、第二蛍光体、第三蛍光体及び第四蛍光体を含む蛍光体70が含有されているが、さらに適宜、その他の材料を添加することもできる。例えば、光拡散材を含むことで、発光素子の指向性を緩和させ、視野角(半減角)を増大させることができる。   The fluorescent member 50 is formed by being filled with a translucent resin or glass so as to cover the light emitting element 10 placed in the recess of the light emitting device 100. In consideration of the ease of manufacture, the material of the fluorescent member is preferably a translucent resin. As the light transmitting resin, it is preferable to use a silicone resin composition in consideration of light resistance, but an insulating resin composition such as an epoxy resin composition or an acrylic resin composition can also be used. The fluorescent member 50 contains the fluorescent substance 70 including the first fluorescent substance, the second fluorescent substance, the third fluorescent substance, and the fourth fluorescent substance, but other materials can be added as appropriate. . For example, by including a light diffusion material, directivity of the light-emitting element can be relaxed and a viewing angle (half angle) can be increased.

蛍光部材50は、蛍光体70を含む波長変換部材としてだけではなく、発光素子10や蛍光体70を外部環境から保護するための部材としても機能する。図1では、蛍光体70は蛍光部材50の全体にほぼ均一の割合で分散している。これにより色ムラがより抑制された光を得るようにすることができる。また蛍光体70への発光素子10からの熱の影響を緩和することができる。なお、蛍光体70は蛍光部材50中で偏在していてもよい。蛍光体70が偏在する場合、蛍光体70は発光素子10に接近して配置されていてもよい。これにより、発光効率により優れる発光装置を構成できる。また蛍光体70への熱の影響を考慮して、蛍光部材50中で発光素子10と、蛍光体70との間隔を空けて配置することもできる。   The fluorescent member 50 functions not only as a wavelength conversion member including the fluorescent body 70 but also as a member for protecting the light emitting element 10 and the fluorescent body 70 from the external environment. In FIG. 1, the phosphors 70 are dispersed at a substantially uniform rate throughout the fluorescent member 50. Thereby, it is possible to obtain light in which color unevenness is further suppressed. Further, the influence of heat from the light emitting element 10 on the phosphor 70 can be mitigated. The phosphors 70 may be unevenly distributed in the fluorescent member 50. When the fluorescent substance 70 is localized, the fluorescent substance 70 may be disposed close to the light emitting element 10. Thereby, a light emitting device which is more excellent in light emission efficiency can be configured. Further, in consideration of the influence of heat on the phosphor 70, the light emitting element 10 and the phosphor 70 can be arranged in the fluorescent member 50 with a space.

図1では、蛍光体70に含まれる第一蛍光体、第二蛍光体、第三蛍光体及び第四蛍光体が混合された状態で図示されているが、図2に示すようにそれぞれの蛍光体を配置してもよい。図2は、本実施形態に係る発光装置の別の一例を示す概略断面図である。図2に示される蛍光部材50は、発光素子10に近い方から順に、第四蛍光体74が含まれる部位と、第三蛍光体73及び第二蛍光体72が混合されて含まれる部位と、第一蛍光体71が含まれる部位とを有している。第一蛍光体71が発光素子10から離れて配置されることで、第一蛍光体71の発光素子10からの熱の影響を緩和することができ、第一蛍光体71の熱による劣化を効果的に抑制できる。図2では第二蛍光体72と第三蛍光体73は混合されて配置されているが、第二蛍光体72と第三蛍光体73とが別々の部位に含まれるように分離されて配置されていてもよい。その場合、例えば、第三蛍光体73の上に第二蛍光体72が配置されていてもよい。   In FIG. 1, the first fluorescent substance, the second fluorescent substance, the third fluorescent substance and the fourth fluorescent substance contained in the fluorescent substance 70 are illustrated in a mixed state, but as shown in FIG. You may arrange the body. FIG. 2 is a schematic cross-sectional view showing another example of the light emitting device according to the present embodiment. The fluorescent member 50 shown in FIG. 2 includes, in order from the side closer to the light emitting element 10, a portion where the fourth phosphor 74 is contained, and a portion where the third phosphor 73 and the second phosphor 72 are mixed and contained, And a portion where the first phosphor 71 is included. By arranging the first fluorescent substance 71 away from the light emitting element 10, the influence of the heat from the light emitting element 10 of the first fluorescent substance 71 can be mitigated, and deterioration of the first fluorescent substance 71 due to heat is effective. Can be suppressed. In FIG. 2, the second phosphor 72 and the third phosphor 73 are mixed and arranged, but the second phosphor 72 and the third phosphor 73 are separated and arranged so as to be included in separate portions. It may be In that case, for example, the second phosphor 72 may be disposed on the third phosphor 73.

図3は、本実施形態に係る発光装置の別の一例を示す概略断面図である。図3に示される蛍光部材50は、発光素子10に近い方から順に、第三蛍光体73及び第二蛍光体72が混合されて含まれる部位と、第四蛍光体74が含まれる部位と、第一蛍光体71が含まれる部位とを有している。第一蛍光体71が発光素子10から離れて配置されることで、第一蛍光体71の発光素子10からの熱の影響を緩和することができ、第一蛍光体71の熱による劣化を効果的に抑制できる。図3では第二蛍光体72と第三蛍光体73は混合されて配置されているが、第二蛍光体72と第三蛍光体73とが別々の部位に含まれるように分離されて配置されていてもよい。その場合、例えば、第三蛍光体73の上に第二蛍光体72が配置されていてもよい。   FIG. 3 is a schematic cross-sectional view showing another example of the light emitting device according to the present embodiment. The fluorescent member 50 shown in FIG. 3 includes, in order from the side closer to the light emitting element 10, a portion where the third phosphor 73 and the second phosphor 72 are mixed and contained, and a portion where the fourth phosphor 74 is contained, And a portion where the first phosphor 71 is included. By arranging the first fluorescent substance 71 away from the light emitting element 10, the influence of the heat from the light emitting element 10 of the first fluorescent substance 71 can be mitigated, and deterioration of the first fluorescent substance 71 due to heat is effective. Can be suppressed. In FIG. 3, the second phosphor 72 and the third phosphor 73 are mixed and arranged, but the second phosphor 72 and the third phosphor 73 are separated and arranged so as to be included in separate portions. It may be In that case, for example, the second phosphor 72 may be disposed on the third phosphor 73.

図4は、本実施形態に係る発光装置の別の一例を示す概略断面図である。図4に示される蛍光部材50は、発光素子10に近い方から順に、第三蛍光体73が含まれる部位と、第二蛍光体72が含まれる部位と、第一蛍光体71が含まれる部位と、第四蛍光体74が含まれる部位とを有している。第四蛍光体74が、第一蛍光体71、第二蛍光体72及び第三蛍光体73を含む赤色蛍光体の上に配置されることで、第四蛍光体74からの発光が赤色蛍光体を励起することを抑制でき、第四蛍光体74の発光を発光装置の外へより効率的に取り出すことができる。図4では第二蛍光体72が第三蛍光体73の上に配置されているが、第二蛍光体72の上に第三蛍光体73が配置されていてもよく、第二蛍光体72と第三蛍光体73とが混合されて配置されていてもよい。   FIG. 4 is a schematic cross-sectional view showing another example of the light emitting device according to the present embodiment. The fluorescent member 50 shown in FIG. 4 includes, in order from the side closer to the light emitting element 10, a portion including the third fluorescent body 73, a portion including the second fluorescent body 72, and a portion including the first fluorescent body 71. And a site where the fourth phosphor 74 is included. The fourth phosphor 74 is disposed on the red phosphor including the first phosphor 71, the second phosphor 72, and the third phosphor 73, so that the light emitted from the fourth phosphor 74 is a red phosphor. Can be suppressed, and the light emission of the fourth phosphor 74 can be more efficiently taken out of the light emitting device. Although the second fluorescent substance 72 is disposed on the third fluorescent substance 73 in FIG. 4, the third fluorescent substance 73 may be disposed on the second fluorescent substance 72. The third phosphor 73 may be mixed and disposed.

図5は、本実施形態に係る発光装置の別の一例を示す概略断面図である。図5に示す蛍光部材50は、発光素子10に近い方から順に、第一蛍光体71が含まれる部位と、第三蛍光体73及び第二蛍光体72が混合されて含まれる部位と、第四蛍光体74が含まれる部位とを有している。第一蛍光体71が、発光装置100の最表面から離れて配置されることで、第一蛍光体71に対する最表面から侵入し得る水分の影響を抑制することができ、耐久性のより高い発光装置を構成することができる。また図5では第四蛍光体74が赤色蛍光体の上に配置されることで、第四蛍光体74からの発光が赤色蛍光体を励起することを抑制でき、第四蛍光体74の発光を発光装置の外へより効率的に取り出すことができる。図5では第二蛍光体72と第三蛍光体73は混合されて配置されているが、第二蛍光体72と第三蛍光体73とが別々の部位に含まれるように分離されて配置されていてもよい。その場合、例えば、第三蛍光体73の上に第二蛍光体72が配置されていてもよい。   FIG. 5 is a schematic cross-sectional view showing another example of the light emitting device according to the present embodiment. The fluorescent member 50 shown in FIG. 5 includes, in order from the side closer to the light emitting element 10, a portion where the first phosphor 71 is contained, a portion where the third phosphor 73 and the second phosphor 72 are mixed and contained, and And a site where the four phosphors 74 are included. Since the first phosphor 71 is disposed apart from the outermost surface of the light emitting device 100, the influence of moisture that can penetrate from the outermost surface to the first phosphor 71 can be suppressed, and light emission with higher durability is achieved. The device can be configured. Further, in FIG. 5, by arranging the fourth fluorescent substance 74 on the red fluorescent substance, it is possible to suppress that the light emitted from the fourth fluorescent substance 74 excites the red fluorescent substance, and the light emission of the fourth fluorescent substance 74 It can be more efficiently taken out of the light emitting device. In FIG. 5, the second phosphor 72 and the third phosphor 73 are mixed and arranged, but the second phosphor 72 and the third phosphor 73 are separated and arranged so as to be included in separate portions. It may be In that case, for example, the second phosphor 72 may be disposed on the third phosphor 73.

図6は、本実施形態に係る発光装置の別の一例を示す概略断面図である。図6に示される蛍光部材50は、発光素子10に近い方から順に、第四蛍光体74が含まれる部位と、第一蛍光体71が含まれる部位と、第三蛍光体73及び第二蛍光体72が混合されて含まれる部位とを有している。第一蛍光体71が、発光装置100の最表面との間に第三蛍光体73及び第二蛍光体72が混合されて含まれる部位を介在させて配置されることで、第一蛍光体71に対する最表面から侵入し得る水分の影響を抑制することができ、耐久性のより高い発光装置を構成することができる。図6では第二蛍光体72と第三蛍光体73は混合されて配置されているが、第二蛍光体72と第三蛍光体73とが別々の部位に含まれるように分離されて配置されていてもよい。その場合、例えば、第三蛍光体73の上に第二蛍光体72が配置されていてもよい。   FIG. 6 is a schematic cross-sectional view showing another example of the light emitting device according to the present embodiment. The fluorescent member 50 shown in FIG. 6 includes, in order from the side closer to the light emitting element 10, a portion including the fourth phosphor 74, a portion including the first phosphor 71, the third phosphor 73 and the second fluorescence. Body 72 is mixed and contained. The first fluorescent substance 71 is disposed with the site where the third fluorescent substance 73 and the second fluorescent substance 72 are mixed and contained between the first fluorescent substance 71 and the outermost surface of the light emitting device 100. Thus, the influence of moisture that may intrude from the outermost surface of the light emitting diode can be suppressed, and a light emitting device with higher durability can be configured. In FIG. 6, the second fluorescent substance 72 and the third fluorescent substance 73 are mixed and arranged, but the second fluorescent substance 72 and the third fluorescent substance 73 are separated and arranged so as to be included in separate portions. It may be In that case, for example, the second phosphor 72 may be disposed on the third phosphor 73.

以下、本実施形態を実施例により具体的に説明するが、本実施形態はこれらの実施例に限定されるものではない。   Hereinafter, the present embodiment will be specifically described by way of examples, but the present embodiment is not limited to these examples.

以下の実施例及び比較例においては、以下の材料を用いた。
・半導体発光素子:極大発光波長が455nmであるLEDチップ
・第一蛍光体:K[Si0.97Mn4+ 0.03](以下、「KSF」ともいう)、極大発光波長が630nmの赤色蛍光体。
・第二蛍光体:Ba1.33Sr0.63Si:Eu0.44(以下、「BSESN」ともいう)、極大発光波長607nmの赤色蛍光体。
・第三蛍光体:Ca0.993AlSiN:Eu0.007(以下、「CASN」ともいう)、極大発光波長が650nmの赤色蛍光体。
・第四蛍光体:Y(Al,Ga)12:Ce(以下、「YAG」ともいう)、極大発光波長が556nmの黄色蛍光体。
The following materials were used in the following examples and comparative examples.
Semiconductor light emitting element: LED chip having a maximum emission wavelength of 455 nm First phosphor: K 2 [Si 0.97 Mn 4+ 0.03 F 6 ] (hereinafter also referred to as “KSF”), maximum emission wavelength of 630 nm Red phosphor.
Second phosphor: Ba 1.33 Sr 0.63 Si 5 N 8 : Eu 0.44 (hereinafter, also referred to as “BSESN”), a red phosphor having a maximum emission wavelength of 607 nm.
Third phosphor: Ca 0.993 AlSiN 3 : Eu 0.007 (hereinafter, also referred to as “CASN”), a red phosphor having a maximum emission wavelength of 650 nm.
Fourth phosphor: Y 3 (Al, Ga) 5 O 12 : Ce (hereinafter, also referred to as “YAG”), a yellow phosphor having a maximum emission wavelength of 556 nm.

(発光装置の作製)
シリコーン樹脂(信越化学工業社製)に、赤色蛍光体と黄色蛍光体とを、赤色蛍光体の構成が表1に示すようになり、色温度が3450Kとなるように混合分散して蛍光体含有樹脂組成物を得た。次にこの蛍光体含有樹脂組成物をLEDパッケージ(極大発光波長455nm)の上に注入、充填し、さらに150℃で4時間加熱することで樹脂組成物を硬化させて、発光装置を作製した。
なお、表中の「赤色蛍光体中のKSF含有率(%)」及び「BSESN:CASN」は質量基準である。
(Production of light emitting device)
A red phosphor and a yellow phosphor are mixed and dispersed in a silicone resin (Shin-Etsu Chemical Co., Ltd.) so that the composition of the red phosphor is as shown in Table 1 and the color temperature is 3450 K. A resin composition was obtained. Next, the phosphor-containing resin composition was injected onto the LED package (maximum emission wavelength 455 nm) and filled, and the resin composition was cured by heating at 150 ° C. for 4 hours to produce a light emitting device.
In the table, “KSF content (%) in red phosphor” and “BSESN: CASN” are based on mass.

(発光スペクトル)
得られた発光装置について、発光スペクトルを測定した。得られた発光スペクトルを図7及び図8に示す。
図7は、比較例1及び2に係る発光装置の発光スペクトルである。また、図8は、実施例1から4及び比較例1に係る発光装置の発光スペクトルである。図7および図8とも、各比較例および実施例における発光装置の発光スペクトルのうち、発光強度が最大となるKSFの極大発光波長における発光強度を1として規格化した相対発光強度を示している。
(Emission spectrum)
The emission spectrum of the obtained light emitting device was measured. The emission spectrum obtained is shown in FIG. 7 and FIG.
FIG. 7 is an emission spectrum of the light emitting device according to Comparative Examples 1 and 2. FIG. 8 is an emission spectrum of the light emitting device according to Examples 1 to 4 and Comparative Example 1. Both FIG. 7 and FIG. 8 show relative light emission intensities standardized with the light emission intensity at the maximum light emission wavelength of KSF which is the maximum of the light emission intensity among the light emission spectra of the light emitting devices in each comparative example and example.

(演色性)
得られた発光装置について、JIS Z 8726 光源の演色性評価方法に準じて、平均演色性評価数Raを算出した。
(Color rendering)
About the obtained light-emitting device, the average color rendering index Ra was calculated according to the method of evaluating color rendering of a light source according to JIS Z 8726.

(相対光束)
得られた発光装置について、積分球を用いて光束を測定し、比較例1における光束を100%として相対光束を算出した。
(Relative luminous flux)
The luminous flux of the obtained light emitting device was measured using an integrating sphere, and the relative luminous flux was calculated with the luminous flux in Comparative Example 1 as 100%.

赤色蛍光体として第一蛍光体(KSF)に加えて、第二蛍光体(BSESN)及び第三蛍光体(CASN)の少なくとも一方を組合せることで相対KSF量を減少させることができる。これにより蛍光体を含む樹脂の流動性が向上し、良好な作業性で発光装置を製造することができる。
また、赤色蛍光体として第一蛍光体(KSF)に加えて、第二蛍光体(BSESN)及び第三蛍光体(CASN)を組合せることで、演色性と相対光束とを両立できることが分かる。
一方、赤色蛍光体として第一蛍光体(KSF)に加えて、第二蛍光体(BSESN)のみを組合せた場合、相対光束は大きくなるものの演色性が低下する。また、また赤色蛍光体として第一蛍光体(KSF)に加えて、第三蛍光体(CASN)のみを組合せた場合、良好な演色性が得られるものの十分な相対光束が得られない。
The relative amount of KSF can be reduced by combining at least one of the second phosphor (BSESN) and the third phosphor (CASN) in addition to the first phosphor (KSF) as a red phosphor. Thereby, the fluidity of the resin containing the phosphor is improved, and the light emitting device can be manufactured with good workability.
Further, it is understood that color rendering property and relative luminous flux can be compatible by combining the second phosphor (BSESN) and the third phosphor (CASN) in addition to the first phosphor (KSF) as a red phosphor.
On the other hand, when only the second phosphor (BSESN) is combined with the first phosphor (KSF) as a red phosphor, the relative luminous flux is increased but the color rendering property is lowered. In addition, when only the third phosphor (CASN) is combined with the first phosphor (KSF) as a red phosphor, although sufficient color rendering can be obtained, a sufficient relative luminous flux can not be obtained.

本発明の発光装置は照明用光源として好適であり、照明器具に適用することができる。   The light emitting device of the present invention is suitable as a light source for illumination, and can be applied to a luminaire.

10:発光素子、50:蛍光部材、70:蛍光体、100:発光装置   10: light emitting element, 50: fluorescent member, 70: phosphor, 100: light emitting device

Claims (11)

430nm以上470nm以下の波長範囲に極大発光波長を有する半導体発光素子と、
620nm以上650nm未満の波長範囲に極大発光波長を有する赤色蛍光体である第一蛍光体と、
600nm以上620nm未満の波長範囲に極大発光波長を有する赤色蛍光体である第二蛍光体と、
650nm以上の波長範囲に極大発光波長を有する赤色蛍光体である第三蛍光体と、
500nm以上565nm以下の波長範囲に極大発光波長を有する第四蛍光体と、を備え、
前記第一蛍光体は、その組成が下記式(I)
[M1−aMn4+ ]・・・(I)
(Aは、K、Li、Na、Rb、Cs及びNH からなる群から選ばれる少なくとも1種であり、Mは、第4族元素及び第14族元素からなる群から選ばれる少なく
とも1種の元素であり、aは0<a<0.2を満たす数を示す。)で表され、
前記第二蛍光体は、その組成が、
(Ba,Sr,Ca) Si :Eu
で表され、
前記第三蛍光体は、その組成が、
CaAlSiN :Eu
で表され、
赤色蛍光体の総質量中における前記第一蛍光体の含有率が80質量%以上99質量%未満であり、前記第二蛍光体の第三蛍光体に対する質量比が30:70以上70:30以下であり、色温度が2500K以上3500K以下である発光装置。
A semiconductor light emitting device having a maximum emission wavelength in a wavelength range of 430 nm to 470 nm;
A first phosphor which is a red phosphor having a maximum emission wavelength in a wavelength range of 620 nm or more and less than 650 nm;
A second phosphor which is a red phosphor having a maximum emission wavelength in a wavelength range of 600 nm or more and less than 620 nm;
A third phosphor which is a red phosphor having a maximum emission wavelength in a wavelength range of 650 nm or more;
And a fourth phosphor having a maximum emission wavelength in a wavelength range of 500 nm to 565 nm,
The composition of the first phosphor is represented by the following formula (I)
A 2 [M 1-a Mn 4+ a F 6 ] (I)
(A is at least one member selected from the group consisting of K + , Li + , Na + , Rb + , Cs + and NH 4 + , and M is a group consisting of a Group 4 element and a Group 14 element at least one element selected, a is represented by.) indicating a number satisfying 0 <a <0.2,
The composition of the second phosphor is
(Ba, Sr, Ca) 2 Si 5 N 8: Eu
Represented by
The composition of the third phosphor is
CaAlSiN 3 : Eu
Represented by
The content ratio of the first phosphor in the total mass of the red phosphor is 80% by mass or more and less than 99% by mass, and the mass ratio of the second phosphor to the third phosphor is 30:70 or more and 70:30 or less And a light emitting device whose color temperature is 2500 K or more and 3500 K or less .
前記第四蛍光体は、その組成が
LuAl12:Ce、
(Al,Ga)12:Ce及び
(Lu,Y,Gd,Tb)(Al,Ga)12:Ce
のいずれかで表される化合物からなる群から選択される少なくとも1種である、請求項1に記載の発光装置。
The fourth phosphor has a composition of Lu 3 Al 5 O 12 : Ce,
Y 3 (Al, Ga) 5 O 12 : Ce and (Lu, Y, Gd, Tb) 3 (Al, Ga) 5 O 12 : Ce
The light-emitting device according to claim 1, wherein the light-emitting device is at least one selected from the group consisting of compounds represented by any one of the above.
赤色蛍光体の総質量中における前記第一蛍光体の含有率が90質量%以上99質量%以下であり、
前記第二蛍光体の第三蛍光体に対する質量比が30:70以上70:30以下である、
請求項1または2に記載の発光装置。
The content of the first phosphor in the total mass of the red phosphor is 90% by mass to 99% by mass,
The mass ratio of the second phosphor to the third phosphor is 30:70 or more and 70:30 or less,
A light emitting device according to claim 1 or 2 .
赤色蛍光体の総質量中における前記第一蛍光体の含有率が85質量%以上90質量%未満であり、
前記第二蛍光体の第三蛍光体に対する質量比が30:70以上50:50未満である、請求項1からのいずれか1項に記載の発光装置。
The content of the first phosphor in the total mass of the red phosphor is 85% by mass or more and less than 90% by mass,
The light emitting device according to any one of claims 1 to 3 , wherein a mass ratio of the second phosphor to the third phosphor is 30:70 or more and less than 50:50.
前記第一蛍光体、第二蛍光体、第三蛍光体及び第四蛍光体は、前記半導体発光素子を被覆し、樹脂を含む蛍光部材に含まれ、蛍光体の総含有量が、樹脂100質量部に対して、50質量部以上170質量部以下である請求項1から4のいずれか1項に記載の発光装置 The first phosphor, the second phosphor, the third phosphor, and the fourth phosphor cover the semiconductor light emitting element and are contained in a fluorescent member containing a resin, and the total content of the phosphor is 100% resin. It is 50 mass parts or more and 170 mass parts or less with respect to part, The light-emitting device of any one of Claim 1 to 4 . 前記第一蛍光体、第二蛍光体、第三蛍光体及び第四蛍光体は、前記半導体発光素子を被覆する蛍光部材に含まれ、蛍光部材は、半導体発光素子に近い方から順に、第四蛍光体が含まれる部位と、第三蛍光体及び第二蛍光体が混合されて含まれる部位と、第一蛍光体が含まれる部位とを有している請求項1から5のいずれか1項に記載の発光装置。The first fluorescent material, the second fluorescent material, the third fluorescent material and the fourth fluorescent material are included in the fluorescent member covering the semiconductor light emitting device, and the fluorescent members are arranged in order from the one closer to the semiconductor light emitting device The method according to any one of claims 1 to 5, comprising a portion in which the fluorescent substance is contained, a portion in which the third fluorescent substance and the second fluorescent substance are mixed and contained, and a portion in which the first fluorescent substance is contained. The light emitting device according to claim 1. 前記第一蛍光体、第二蛍光体、第三蛍光体及び第四蛍光体は、前記半導体発光素子を被覆する蛍光部材に含まれ、蛍光部材は、半導体発光素子に近い方から順に、第三蛍光体及び第二蛍光体が混合されて含まれる部位と、第四蛍光体が含まれる部位と、第一蛍光体が含まれる部位とを有している請求項1から5のいずれか1項に記載の発光装置。The first fluorescent material, the second fluorescent material, the third fluorescent material and the fourth fluorescent material are included in the fluorescent member covering the semiconductor light emitting device, and the fluorescent members are arranged in order from the one closer to the semiconductor light emitting device The method according to any one of claims 1 to 5, comprising a portion in which the phosphor and the second phosphor are mixed and contained, a portion in which the fourth phosphor is contained, and a portion in which the first phosphor is contained. The light emitting device according to claim 1. 前記第一蛍光体、第二蛍光体、第三蛍光体及び第四蛍光体は、前記半導体発光素子を被覆する蛍光部材に含まれ、蛍光部材は、半導体発光素子に近い方から順に、第四蛍光体が含まれる部位と、第三蛍光体及び第二蛍光体が混合されて含まれる部位と、第一蛍光体が含まれる部位とを有している請求項1から5のいずれか1項に記載の発光装置。The first fluorescent material, the second fluorescent material, the third fluorescent material and the fourth fluorescent material are included in the fluorescent member covering the semiconductor light emitting device, and the fluorescent members are arranged in order from the one closer to the semiconductor light emitting device The method according to any one of claims 1 to 5, comprising a portion in which the fluorescent substance is contained, a portion in which the third fluorescent substance and the second fluorescent substance are mixed and contained, and a portion in which the first fluorescent substance is contained. The light emitting device according to claim 1. 前記第一蛍光体、第二蛍光体、第三蛍光体及び第四蛍光体は、前記半導体発光素子を被覆する蛍光部材に含まれ、蛍光部材は、半導体発光素子に近い方から順に、第三蛍光体が含まれる部位と、第二蛍光体が含まれる部位と、第一蛍光体が含まれる部位と、第四蛍光体が含まれる部位とを有している請求項1から5のいずれか1項に記載の発光装置。The first fluorescent material, the second fluorescent material, the third fluorescent material and the fourth fluorescent material are included in the fluorescent member covering the semiconductor light emitting device, and the fluorescent members are arranged in order from the one closer to the semiconductor light emitting device The method according to any one of claims 1 to 5, comprising a portion in which the fluorescent substance is contained, a portion in which the second fluorescent substance is contained, a portion in which the first fluorescent substance is contained, and a portion in which the fourth fluorescent substance is contained. The light emitting device according to item 1. 前記第一蛍光体、第二蛍光体、第三蛍光体及び第四蛍光体は、前記半導体発光素子を被覆する蛍光部材に含まれ、蛍光部材は、半導体発光素子に近い方から順に、第一蛍光体が含まれる部位と、第三蛍光体及び第二蛍光体が混合されて含まれる部位と、第四蛍光体が含まれる部位とを有している請求項1から5のいずれか1項に記載の発光装置。The first fluorescent material, the second fluorescent material, the third fluorescent material and the fourth fluorescent material are included in the fluorescent member covering the semiconductor light emitting device, and the fluorescent members are arranged in order from the one closer to the semiconductor light emitting device The method according to any one of claims 1 to 5, comprising a portion in which the fluorescent substance is contained, a portion in which the third fluorescent substance and the second fluorescent substance are mixed and contained, and a portion in which the fourth fluorescent substance is contained. The light emitting device according to claim 1. 前記第一蛍光体、第二蛍光体、第三蛍光体及び第四蛍光体は、前記半導体発光素子を被覆する蛍光部材に含まれ、蛍光部材は、半導体発光素子に近い方から順に、第四蛍光体が含まれる部位と、第一蛍光体が含まれる部位と、第三蛍光体及び第二蛍光体が混合されて含まれる部位とを有している請求項1から5のいずれか1項に記載の発光装置。The first fluorescent material, the second fluorescent material, the third fluorescent material and the fourth fluorescent material are included in the fluorescent member covering the semiconductor light emitting device, and the fluorescent members are arranged in order from the one closer to the semiconductor light emitting device The method according to any one of claims 1 to 5, comprising a portion in which the fluorescent substance is contained, a portion in which the first fluorescent substance is contained, and a portion in which the third fluorescent substance and the second fluorescent substance are mixed and contained. The light emitting device according to claim 1.
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