JP6520101B2 - Electronic device and method of manufacturing electronic device - Google Patents

Description

  The present invention relates to an electronic device and a method of manufacturing the electronic device.

  There is known a technique in which electronic components such as semiconductor elements and circuit boards are opposed to each other and terminals of each other are joined. Further, for the purpose of improving reliability and the like, there is known a technique of sealing between electronic components in which terminals are joined to each other with a sealing material (also referred to as an underfill or the like). As the sealing material, a resin such as epoxy, or a resin in which a filler such as silica is contained in such a resin is known.

Unexamined-Japanese-Patent No. 2004-312051

  In the electronic device which seals between the electronic parts which made it face and join as mentioned above with a sealing material, the heat of the electronic parts which generates heat at the time of operation is transferred between the electronic parts, and becomes electronic parts and electronic parts The heat may be dissipated to the outside of the electronic device from the thermally connected heat dissipation member. In this case, if the thermal conductivity of the sealing material is low and the heat conduction between the electronic components is insufficient, the electronic components may overheat, thereby causing the performance deterioration or failure of the electronic components or the electronic devices including the electronic components. There is.

According to an aspect of the present invention, it has a first melting point for bonding a first electronic component, a second electronic component facing the first electronic component, and the first electronic component and the second electronic component. A second bonding portion having a first bonding portion and a second melting point, and provided between the first bonding portion and the second bonding portion and extending from the first electronic component to the second electronic component ; 1 and the conductor portion that melting point and having a high third melting point than the second melting point, the electronic device comprising a sealing member for sealing between said second electronic component and the first electronic component is provided Ru.

Further, according to one aspect of the present invention, a step of causing a first electronic component and a second electronic component to face each other, a first terminal and a second terminal of the first electronic component, and a third of the second electronic component. A terminal and a fourth terminal are respectively joined, and a first joint portion having a first melting point of the first terminal and the third terminal, and a second melting point of the second terminal and the fourth terminal are provided . A step of forming a second bonding portion; and a conductor material having a first melting point and a third melting point higher than the second melting point, between the formed first bonding portion and the second bonding portion. Using the step of forming a conductor extending from the first electronic component to the second electronic component, and sealing the space between the first electronic component and the second electronic component with a sealing material A method of manufacturing an electronic device is provided.

According to the disclosed technology, the conductive portion provided between junction, increasing the thermal conductivity between the electronic components, it is possible to suppress the overheating of the electronic components, performance, excellent electron device reliability It is possible to realize

It is a figure showing an example of the electronic device concerning a 1st embodiment. It is explanatory drawing (the 1) of an example of the electronic device which concerns on another form. It is a figure showing an example of the electronic device concerning a 2nd embodiment. It is explanatory drawing (the 2) of an example of the electronic device which concerns on another form. It is a figure showing an example of the electronic device concerning a 3rd embodiment. It is explanatory drawing (the 1) of an example of the electronic device manufacturing method which concerns on 3rd Embodiment. It is explanatory drawing (the 2) of an example of the electronic device manufacturing method which concerns on 3rd Embodiment. It is a figure which shows another example of the electronic device which concerns on 3rd Embodiment. It is a figure which shows an example of the electronic device which concerns on another form. It is explanatory drawing (the 1) of an example of the electronic component joining method which concerns on 4th Embodiment. It is explanatory drawing (the 2) of an example of the electronic component joining method which concerns on 4th Embodiment. It is explanatory drawing (the 3) of an example of the electronic component joining method which concerns on 4th Embodiment. It is explanatory drawing (the 4) of an example of the electronic component joining method which concerns on 4th Embodiment. It is explanatory drawing (the 5) of an example of the electronic component joining method which concerns on 4th Embodiment. It is explanatory drawing (the 6) of an example of the electronic component joining method which concerns on 4th Embodiment. It is explanatory drawing (the 7) of an example of the electronic component joining method which concerns on 4th Embodiment. It is explanatory drawing (the 8) of an example of the electronic component joining method which concerns on 4th Embodiment. It is explanatory drawing (the 9) of an example of the electronic component joining method which concerns on 4th Embodiment. It is explanatory drawing (the 1) of an example of the electronic component joining method which concerns on 5th Embodiment. It is explanatory drawing (the 2) of an example of the electronic component joining method which concerns on 5th Embodiment. It is explanatory drawing (the 3) of an example of the electronic component joining method which concerns on 5th Embodiment. It is explanatory drawing (the 4) of an example of the electronic component joining method which concerns on 5th Embodiment. It is explanatory drawing (the 5) of an example of the electronic component joining method which concerns on 5th Embodiment. It is explanatory drawing (the 6) of an example of the electronic component joining method which concerns on 5th Embodiment. It is a figure which shows the example of 1st structure of the convex part which concerns on 6th Embodiment. It is a figure which shows the example of 2nd structure of the convex part which concerns on 6th Embodiment. It is a figure which shows an example of the electronic device which concerns on 7th Embodiment. It is a figure which shows the structural example of a semiconductor chip. It is a figure (the 1) showing an example of composition of a semiconductor package. It is a figure (the 2) showing an example of composition of a semiconductor package. It is a figure which shows the structural example of a circuit board.

First, the first embodiment will be described.
FIG. 1 is a view showing an example of the electronic device according to the first embodiment. FIG. 1 schematically shows a cross section of an essential part of an example of the electronic device according to the first embodiment.

An electronic device 1 illustrated in FIG. 1 includes an electronic component 10, an electronic component 20, a bonding portion 30 (a bonding portion 31 and a bonding portion 32), a conductor portion 40, and a sealing material 50.
The electronic component 20 is disposed above the electronic component 10 so as to face the electronic component 10. The electronic component 10 and the electronic component 20 are, for example, a semiconductor element (semiconductor chip), a semiconductor package (semiconductor device) including a semiconductor chip, or a circuit board. The details of configuration examples of the semiconductor chip, the semiconductor package, and the circuit board will be described later (FIGS. 28 to 31). The electronic component 10 and the electronic component 20 include circuit elements such as wirings, vias, or transistors provided inside.

  The bonding portion 30 is provided between the electronic component 10 and the electronic component 20. The electronic component 10 and the electronic component 20 are electrically connected through the bonding portion 30. Here, as an example, two adjacent junctions 31 and junctions 32 are illustrated. For the bonding portion 31 and the bonding portion 32, various conductor materials such as solder, copper (Cu), nickel (Ni), and gold (Au) are used.

  The conductor portion 40 is provided between the joint portion 31 and the joint portion 32 adjacent to each other between the electronic component 10 and the electronic component 20. Conductor portion 40 is provided to extend from one electronic component 10 (or electronic component 20) to the other electronic component 20 (or electronic component 10). For the conductor portion 40, various conductor materials, such as solder, exhibiting a certain thermal conductivity are used.

  The sealing material 50 is provided between the electronic component 10 and the electronic component 20 joined at the joining portion 31 and the joining portion 32. For the sealing material 50, a resin material such as an epoxy resin, a phenol resin, or a polyimide is used. The sealing material 50 improves the bonding strength between the electronic component 10 and the electronic component 20. The sealing material 50 is also referred to as an underfill material, an underfill resin, or simply an underfill.

  In the electronic device 1 having the above configuration, a device that generates heat during operation can be used for at least one of the electronic component 10 and the electronic component 20. In this case, the heat of the heat-generating electronic component 10 or the electronic component 20 is transferred between the electronic component 10 and the electronic component 20. Then, heat is dissipated to the outside of the electronic device 1 from the electronic component 10 and the electronic component 20 or from a heat dissipation member (not shown) such as a cooling plate thermally connected to the electronic component 10 or the electronic component 20. Ru.

  In the electronic device 1, the heat transfer between the electronic component 10 and the electronic component 20 is performed by the bonding portion 31 and the bonding portion 32 that electrically and mechanically bond the electronic component 10 and the electronic component 20. Conductor materials are used for the bonding portions 31 and 32 and the heat conductivity is relatively good. Furthermore, in the electronic device 1, the heat transfer between the electronic component 10 and the electronic component 20 is performed by the conductor portion 40 provided between the adjacent bonding portion 31 and the bonding portion 32. Similar to the bonding portion 31 and the bonding portion 32, a conductive material is also used for the conductor portion 40, and the heat conductivity is relatively good.

  In the electronic device 1, the heat transfer between the electronic component 10 and the electronic component 20 is efficiently performed by the joint 31 and the joint 32 adjacent to each other and the conductor 40 provided between them. It is supposed to be done. By providing the conductor portion 40, the number of heat conduction paths is increased as compared with the case where the conductor portion 40 is not provided (when the electronic component 10 and the electronic component 20 are joined only by the joining portion 30), and more efficient Then, the heat transfer between the electronic component 10 and the electronic component 20 is performed. Therefore, a sealing material 50 such as epoxy resin having a thermal conductivity lower than that of the bonding portion 30 (31, 32) and the conductor portion 40 is provided between the electronic component 10 and the electronic component 20 to improve bonding strength. Even if it is, efficient heat conduction between the electronic component 10 and the electronic component 20 is possible.

  By enabling efficient heat conduction between the electronic component 10 and the electronic component 20, it is possible to enhance the heat dissipation to the outside and suppress the overheating of the electronic component 10 and the overheating of the electronic component 20. Become. As a result, it is possible to suppress the performance degradation and the failure due to the heat of the electronic component 10 and the electronic component 20 or the electronic device 1 including these.

  By the way, there is a technique of providing a sealing material containing an insulating filler such as silica between the electronic component 10 and the electronic component 20. An electronic device using such a technology will be described with reference to the following FIG.

  FIG. 2 is an explanatory view of an example of an electronic device according to another embodiment. FIG. 2A schematically shows the cross section of the main part of the manufacturing process of an example of the electronic device according to another embodiment, and FIG. 2B shows the main part cross section of an example of the electronic device according to another embodiment. Is schematically illustrated.

  In FIG. 2A, the electronic component 10 and the electronic component 20 are made to face each other by interposing the sealing material 50A containing the insulating filler 52A in a resin 51A such as an epoxy resin, and the terminals 11 and the mutual terminals 11 are made. The process which joins the terminal 21, the terminal 12, and the terminal 22 by thermocompression bonding is illustrated.

  In addition, with the miniaturization of devices in recent years, the terminal pitch of the electronic component group to be joined has become narrow, whereby the size of the junction between the terminals becomes smaller and the gap between the electronic components to be joined becomes narrower. . It may be difficult to introduce a liquid resin as a sealing material between electronic components after terminal bonding between electronic components having narrow gaps. In such a case, a method as shown in FIG. 2A, that is, a method of performing terminal bonding by thermocompression bonding from the state where the sealing material 50 is interposed can be employed. As the sealing material 50A to be interposed between the electronic component 10 and the electronic component 20 in advance before joining the terminals 11 and 21 and the terminals 12 and 22 to each other, a liquid or film is used. Can.

  From the state as shown in FIG. 2A, for example, while heating, the electronic component 20 is pressed to the electronic component 10 side, and the terminal 11 and the terminal 21 of the electronic component 10 and the electronic component 20 are joined together. , And mutually connect the terminal 12 and the terminal 22. Then, the resin 51A of the sealing material 50A is cured. Thus, as shown in FIG. 2B, the electronic component 10 and the electronic component 20 are electrically and mechanically connected by the joint 31A between the terminal 11 and the terminal 21 and the joint 32A between the terminal 12 and the terminal 22. An electronic device 1A bonded to the

  In such an electronic device 1A, a heat transfer between the electronic component 10 and the electronic component 20 is mainly performed by the bonding portion 31A and the bonding portion 32A, which use a conductor material and have relatively good thermal conductivity (FIG. 2). (B) is performed by a dotted arrow). Although heat transfer between the electronic component 10 and the electronic component 20 can be performed also through the sealing material 50A, the heat conductivity is relatively low because the heat conductivity of the resin 51A, in particular, the resin 51A is relatively low. Low.

  In order to increase the thermal conductivity of the sealing material 50A, the content of silica which is one of the fillers 52A is increased, alumina or boron nitride having a thermal conductivity higher than that of silica is used for the filler 52A, or There is also a method of increasing the content of alumina, boron nitride or the like. Although any method can achieve a certain improvement in thermal conductivity, its thermal conductivity is lower than that of the conductor portion 40 as described above, and the content of the filler 52A has an upper limit. It is difficult to further improve the thermal conductivity. When the content of the filler 52A is increased, the viscosity of the liquid sealing material 50A is increased. Therefore, in the case of the method of introducing the sealing material between the electronic components after the terminal bonding as in the prior art, the viscosity is high. It is difficult to introduce the liquid sealant 50A between the narrow gap electronic components.

  On the other hand, in the electronic device 1 shown in FIG. 1, a conductor material is used between the adjacent bonding portion 31 and the bonding portion 32 similarly to the bonding portion 31 and the bonding portion 32, and the heat conductivity is relatively good. The conductor portion 40 is provided. Thus, the sealing material 50 is provided between the electronic component 10 and the electronic component 20 to improve the bonding strength thereof, and to improve the thermal conductivity between the electronic component 10 and the electronic component 20. Is possible.

  Between the joints as close as possible with narrow pitches, the joints which electrically connect between the electronic components or the electrical connections between the electronic components for the purpose of heat conduction between the electronic components. It is impossible to provide another joint such as a dummy joint which does not contribute to In the electronic device 1 described above, the conductor portion 40 also forms a heat conduction path between the electronic component 10 and the electronic component 20 between the bonding portion 31 and the bonding portion 32 in the case where they are adjacent to each other at such a narrow pitch. The thermal conductivity between the electronic component 10 and the electronic component 20 can be improved.

  The conductor portion 40 of the electronic device 1 shown in FIG. 1 uses, for example, a liquid sealing material containing a filler containing a conductor on the entire surface or the surface in a predetermined resin, and the electronic component 10 and the electronic component 20 are used. It can form by heating in the state which intervened between these. At that time, heating is performed under the condition that the resin of the sealing material is not cured, and at a temperature at which the conductor of the filler including the conductor is melted. By this heating, the filler is condensed so as to extend from the electronic component 10 to the electronic component 20 (or from the electronic component 20 to the electronic component 10), and the conductor is melted to form the conductor portion 40. In this case, although not shown here, the electronic component 10 and the electronic component 20 have a structure in which a filler including a conductor is easily aggregated so as to extend from the electronic component 10 to the electronic component 20, for example, There may be provided projections or depressions which exhibit wettability when the conductor is molten.

Next, a second embodiment will be described.
FIG. 3 is a view showing an example of the electronic device according to the second embodiment. FIG. 3 schematically shows the cross section of the main part of an example of the electronic device according to the second embodiment.

  The electronic device 2 shown in FIG. 3 is characterized in that the insulating portion 60 (insulating portion 61 and insulating portion 62) covering the bonding portion 30 (the bonding portion 31 and the bonding portion 32) is provided. This is different from the electronic device 1 according to.

  For example, a resin material is used for the insulating unit 60. The insulating portion 61 is provided to cover the outer surface of the bonding portion 31 for bonding the electronic component 10 and the electronic component 20, and the insulating portion 62 is provided to cover the outer surface of the bonding portion 32 for bonding the electronic component 10 and the electronic component 20. Is provided. Thus, between the adjacent joint portion 31 and the joint portion 32 respectively covered by the insulating portion 61 and the insulating portion 62, from one electronic component 10 (or the electronic component 20) to the other electronic component 20 (or the electronic component 20) Conductor portion 40 is provided to extend to component 10).

  In the electronic device 2 having the above configuration, in addition to the effect of improving the thermal conductivity between the electronic component 10 and the electronic component 20 by the conductor portion 40, a short circuit between the adjacent bonding portion 31 and the bonding portion 32 is insulated. It becomes possible to suppress by 61 and the insulating part 62.

  Here, FIG. 4 is an explanatory view of an example of the electronic device according to another embodiment. FIG. 4A schematically shows the cross section of the main part of the manufacturing process of an example of the electronic device according to another embodiment, and FIG. 4B shows the main part cross section of an example of the electronic device according to another embodiment. Is schematically illustrated.

  As a sealing material to be interposed between the electronic component 10 and the electronic component 20, there is a technique using a resin such as an epoxy resin in which a conductive filler is contained. In FIG. 4A, a sealing material 50B in which a conductive filler 52B is contained in a resin 51B such as an epoxy resin is interposed, and the electronic component 10 and the electronic component 20 are opposed to each other, and the terminals 11 and each other are made. The process which joins the terminal 21, the terminal 12, and the terminal 22 by thermocompression bonding is illustrated. In addition, in the sealing material 50B to be interposed between the electronic component 10 and the electronic component 20 in advance before joining the terminals 11 and 21 and the terminals 12 and 22 to each other, a liquid containing conductive filler 52B Alternatively, film-like ones, so-called anisotropic conductive adhesives can be used.

  From the state as shown in FIG. 4A, for example, while heating, the electronic component 20 is pressed to the electronic component 10 side, and the terminal 11 and the terminal 21 of the electronic component 10 and the electronic component 20 are joined together. , And mutually connect the terminal 12 and the terminal 22. Then, the resin 51B of the sealing material 50B is cured. Thus, as shown in FIG. 4B, the electronic component 10 and the electronic component 20 are electrically and mechanically connected by the joint portion 31B between the terminal 11 and the terminal 21 and the joint portion 32B between the terminal 12 and the terminal 22. An electronic device 1B bonded to the

  In such an electronic device 1B, the conductive material 50B between the electronic component 10 and the electronic component 20 has conductivity with a thermal conductivity higher than that of the insulating filler 52A such as the electronic device 1A (FIG. 2). Filler 52B is contained. In the electronic device 1B, since the conductive material 52B contains the conductive filler 52B, the electronic component 10 and the electronic component 20 are compared with the electronic device 1A using the insulating filler 52A. It is possible to improve the thermal conductivity between

  However, in the electronic device 1B, when the electronic component 10 and the electronic component 20 are bonded, the conductive filler 52B may be aggregated. After bonding, shorting may occur between the adjacent bonding portion 31B and the bonding portion 32B (indicated by a dotted arrow in FIG. 4B) by the filler 52B aggregated in this manner.

  On the other hand, in the electronic device 2 shown in FIG. 3, the outer surface of the bonding portion 31 is covered with the insulating portion 61, and the outer surface of the bonding portion 32 adjacent to the bonding portion 31 is covered with the insulating portion 62. Thereby, even when the conductive portion 40 is provided between the adjacent bonding portion 31 and the bonding portion 32, a short circuit between the bonding portion 31 and the bonding portion 32 via such a conductor portion 40 Can be effectively suppressed.

  The conductor portion 40 of the electronic device 2 shown in FIG. 3 uses, for example, a liquid sealing material containing a filler containing a conductor on the entire surface or the surface in a predetermined resin, and the electronic component 10 and the electronic component 20 are used. It can form by heating in the state which intervened between these. At that time, heating is performed under the condition that the resin of the sealing material is not cured, and at a temperature at which the conductor of the filler including the conductor is melted. By this heating, the filler is condensed so as to extend from the electronic component 10 to the electronic component 20 (or from the electronic component 20 to the electronic component 10), and the conductor is melted to form the conductor portion 40. In this case, although not shown here, the electronic component 10 and the electronic component 20 have a structure in which a filler including a conductor is easily aggregated so as to extend from the electronic component 10 to the electronic component 20, for example, There may be provided projections or depressions which exhibit wettability when the conductor is molten.

  For example, even in the case of obtaining the electronic device 2 in this manner, the bonding portion 31 and the bonding portion 32 are provided by providing the insulating portion 61 and the insulating portion 62 which respectively cover the bonding portion 31 and the bonding portion 32 adjacent to each other. And the short circuit between them is effectively suppressed.

Next, a third embodiment will be described.
FIG. 5 is a view showing an example of the electronic device according to the third embodiment. FIG. 5 schematically shows the cross section of the main part of an example of the electronic device according to the third embodiment.

  The electronic device 3 shown in FIG. 5 has an inner layer (inner layer) 61a covering the side surface of the bonding portion 31 and an outer layer (outer layer) 61b covering the same as the insulating portion 61 covering the bonding portion 31. Similarly, an insulating layer 62 covering the bonding portion 32 adjacent to the bonding portion 31 includes an inner layer (inner layer) 62 a covering the side surface of the bonding portion 32 and an outer layer (outer layer) 62 b covering the same.

  The electronic device 3 shown in FIG. 5 further has a convex portion 13 and a convex portion 23 respectively provided on the electronic component 10 and the electronic component 20, and the convex portion 13 to the convex portion 23 (or the convex portion 23 to the convex portion 13) And the conductor portion 40 is provided to extend. At least one protrusion 13 of the electronic component 10 is disposed between the adjacent bonding portion 31 and the bonding portion 32, and the protrusion 23 of the electronic component 20 is between the adjacent bonding portion 31 and the bonding portion 32. At least one is arranged. The convex portion 13 and the convex portion 23 are disposed, for example, at mutually corresponding positions.

  In the electronic device 3 having the above configuration, the electronic component 10 and the electronic component 20 are compared with the case where the conductor portion 40 is not provided by the conductor portion 40 extending from the convex portion 13 of the electronic component 10 to the convex portion 23 of the electronic component 20. Heat transfer can be performed efficiently. In addition, a short circuit between the adjacent bonding portion 31 and the bonding portion 32 can be suppressed by the insulating portion 61 (61a, 61b) and the insulating portion 62 (62a, 62b).

Subsequently, an example of a method of manufacturing the electronic device 3 will be described with reference to FIGS. 6 and 7 below.
6 and 7 are explanatory views of an example of the method of manufacturing the electronic device according to the third embodiment. FIG. 6 schematically shows the cross section of the main part of an example of the electronic component preparation step according to the third embodiment. FIG. 7 schematically shows the cross section of the main part of an example of the electronic component bonding step according to the third embodiment.

Here, for the sake of convenience, an electronic component 100 corresponding to the electronic component 10 or the electronic component 20 before bonding will be described.
First, an electronic component 100 as shown in FIG. 6A is prepared. The electronic component 100 has terminals 110 provided adjacent to each other at a predetermined pitch, which project from the main body 100a. The terminal 110 is electrically connected to a circuit element (a wire, a via, a transistor, or the like not shown) provided in the main body portion 100 a of the electronic component 100.

  For the terminal 110, solder, for example, solder containing tin (Sn) can be used. The terminal 110 may be formed by providing the above-described solder on a conductor material such as a film of Cu, Ni, Au or the like, or a column. The terminal 110 can be formed, for example, on the main body portion 100 a (an electrode pad or the like not shown) using a plating technique.

  The electronic component 100 has at least one protrusion 130 between the adjacent terminals 110. The convex portion 130 is provided, for example, such that the height projecting from the main body portion 100 a is lower than that of the terminal 110.

  For the convex portion 130, a material that exhibits wettability when a conductive filler such as particles using a solder described later melts is used. For the convex portion 130, for example, a conductor material such as Cu, Ni, Au or the like can be used. The convex portion 130 using such a conductive material can be formed on the main body portion 100 a using, for example, a plating technique. In addition, for the convex portion 130, for example, one in which a conductor material such as Cu, Ni, Au or the like is provided on the surface of an insulator such as a projecting resin can be used. Such a convex portion 130 is formed, for example, by forming a projecting insulator on the main body portion 100a using a photolithography technique, and forming a conductor material on the surface of the projecting insulator using a plating technique. , Can be formed.

  As shown in FIG. 6B, the insulating film 160 is formed on the surface of such an electronic component 100. For the insulating film 160, for example, a resin material can be used. For the insulating film 160, for example, a resin material which is hardened or semi-hardened at a low temperature as compared with a resin material used for the insulating film 170 described later can be used.

As a material of the insulating film 160, for example, a material containing a main agent component and a curing agent component such as aliphatic amine, aromatic amine, polyaminoamide, polythiol, ketimine can be used.
The material of the insulating film 160 can be supplied to the surface of the electronic component 100 using a technique such as a spin coating method, a spray method, or a doctor blade method. After supplying a material using such a technique, it is cured by heating or semi-cured to form an insulating film 160.

  After the formation of the insulating film 160, as shown in FIG. 6C, the insulating film 160 formed on the portion other than the side surface of the terminal 110 is removed. For removal of the insulating film 160, an etch back method, a polishing method, a plasma treatment method, or the like can be used. For example, the insulating film 160 formed on the portion other than the side surface of the terminal 110 is removed using an etch back method. If the insulating film 160 remains on the upper surface of the terminal 110, the insulating film 160 remaining on the upper surface is removed using a polishing method or a plasma treatment method.

  After the insulating film 160 is formed on the side surface of the terminal 110 in this manner, as shown in FIG. 6D, the upper surface of the terminal 110 and the insulating film 160 formed on the side surface of the terminal 110 are covered. An insulating film 170 is formed. For example, a resin material can be used for the insulating film 170. For the insulating film 170, for example, a resin material which is cured or semi-cured at a high temperature as compared with the resin material used for the insulating film 160 described above can be used. Furthermore, for the insulating film 170, for example, a material that is cured at a temperature higher than the melting point of the terminal 110 described above can be used. The insulating film 170 can also be made of a material that is cured at a temperature lower than the melting point of the terminal 110 described above.

  The material of the insulating film 170 may contain a flux component that exhibits a reducing action of a conductor material such as solder used for the terminal 110 in a bonding step described later. As a material of the insulating film 170, for example, a material containing a main component such as an epoxy resin and a curing agent such as an organic acid anhydride can be used.

  The material of the insulating film 170 can be supplied to the surface of the electronic component 100 using a technique such as a dispensing method or a transfer method. After supplying a material using such a technique, the material is semi-cured by heating to form an insulating film 170. For example, the insulating film 170 is semi-cured by heating at 40 ° C. to 80 ° C.

  Thus, when the insulating film 160 is provided on the side surface of the terminal 110 and the insulating film 170 is provided to cover the upper surface of the terminal 110 and the insulating film 160, at least the insulating film 170 of the insulating film 160 and the insulating film 170 is completely Into a semi-cured (so-called B-stage) state without curing.

  By the method as shown in FIGS. 6A to 6D, the protrusion 130, the terminal 110, the insulating film 160 covering the side surface of the terminal 110, and the insulating film covering the upper surface of the terminal 110 on the main body 100a. An electronic component 100 having 170 is obtained.

According to the example of the preparation process of such an electronic component 100, as shown to FIG. 7 (A), the electronic component 10 and the electronic component 20 to join are prepared.
As shown in FIG. 7A, one electronic component 10 has a main body 10a (corresponding to the main body 100a in FIG. 6), and terminals 11 and 12 provided at a predetermined height on the main body 10a. It has (It corresponds to the terminal 110 of FIG. 6), and the convex part 13 (equivalent to the convex part 130 of FIG. 6). Furthermore, the electronic component 10 includes the inner layer 61a and the inner layer 62a (corresponding to the insulating film 160 in FIG. 6) covering the side surfaces of the terminal 11 and the terminal 12, and the upper surface and the inner layer 61a and the inner layer 62a of the terminal 11 and the terminal 12, respectively. And an outer layer 62b (corresponding to the insulating film 170 in FIG. 6).

  Similarly, the other electronic component 20 to be joined to the electronic component 10 has a main body 20a (corresponding to the main body 100a in FIG. 6), and a terminal 21 and a terminal provided at a predetermined height on the main body 20a. 22 (corresponding to the terminal 110 in FIG. 6) and the convex portion 23 (corresponding to the convex portion 130 in FIG. 6). Furthermore, the electronic component 20 includes the inner layer 61a and the inner layer 62a (corresponding to the insulating film 160 in FIG. 6) covering the side surfaces of the terminal 21 and the terminal 22, and the upper surface and the inner layer 61a and the inner layer 62a of the terminal 21 and the terminal 22, respectively. And an outer layer 62b (corresponding to the insulating film 170 in FIG. 6).

  As shown in FIG. 7A, the electronic component 10 and the electronic component 20 having such a configuration are interposed with the sealing material 50a, and the positions of the terminals 11 and 21 and the terminals 12 and 22 are aligned with each other. And arrange them facing each other.

As the sealing material 50a, a so-called anisotropic conductive adhesive is used, in which a filler 52a containing a conductor on the whole or the surface is contained in a predetermined resin 51a.
The resin 51a of the sealing material 50a contains components of a main agent and a curing agent. For example, an epoxy resin is used as the main agent. As the curing agent, for example, one or more of dicyandiamide, phenol novolac and imidazole is used. Such curing agents may further contain one or more of amine, polyamine, hydrazine, acid anhydride, onium salt, polythiol, phenol and ketimine.

For the resin 51a, for example, a material that is cured at a temperature higher than the curing temperature of the inner layer 61a and the inner layer 62a and the outer layer 61b and the outer layer 62b is used.
The conductor used for the filler 52a of the sealing material 50a is, for example, solder. As the solder used for the filler 52a, a solder containing Sn can be used. For example, a solder having a melting point of 260 ° C. or less can be used, and as such a solder, Sn-Ag-Cu solder (Ag: 3 wt%, Cu: 0.5 wt%) containing Sn, Ag and Cu is mentioned. be able to.

  As the filler 52a, a solder powder containing particles of the solder as described above can be used. In addition, it is also possible to use, as the filler 52a, a powder including one in which the above-described solder is provided on at least a part of the surface of core particles formed using an inorganic material, an organic material or a metal material.

For the resin 51a, a material that is cured at a temperature higher than the melting point of the solder used for the filler 52a is used.
For example, the sealing material 50a containing such a filler 52a in the resin 51a is supplied onto the electronic component 10, and the electronic component 20 is mounted on the electronic component 10 above the electronic component 10 supplied with the sealing material 50a. By arranging them so as to face each other, a state as shown in FIG. 7A can be obtained.

From the state as shown in FIG. 7A, for example, the electronic component 20 is pressed to the electronic component 10 while heating (heating).
During the heating and pressing, the outer layer 61 b and the outer layer 62 b do not cure first, and the terminals 11 and 21, and the terminals 12 and 22 do not melt. The outer layers 61b are in contact with each other, and the semi-cured outer layers 62b are in contact with each other. When heating and pressing further progress, the semi-cured outer layer 61 b is pushed out from between the terminals 11 and 21, and the semi-cured outer layer 62 b is pushed out from between the terminals 12 and 22.

  Then, when the heating temperature is higher than the melting point of the solder used for the terminals 11 and 21 and the terminals 12 and 22 in a state where the terminals 11 and 21 are in contact and the terminals 12 and 22 are in contact. The terminal 11 and the terminal 21 are joined, and the terminal 12 and the terminal 22 are joined. For example, by heating at 140 ° C., the terminal 11 and the terminal 21 are joined, and the terminal 12 and the terminal 22 are joined. Thereby, as shown in FIG. 7B, a joint 31 between the terminal 11 and the terminal 21 and a joint 32 between the terminal 12 and the terminal 22 are formed. The joint 31 and the joint 32 at this time are in a molten state.

  When the heating proceeds further, the inner layers 61a of the terminals 11 and 21 and the inner layers 62a of the terminals 12 and 22 are joined, and the outer layers 61b of the terminals 11 and 21 have higher curing temperature than those. The outer layers 62b of the terminals 22 are joined together. For example, by heating at 160 ° C. to 180 ° C., the inner layers 61 a and the inner layers 62 a are joined, and the outer layers 61 b and the outer layers 62 b are joined. Thus, as shown in FIG. 7B, the insulating portion 61 having the joined inner layer 61a and the joined outer layer 61b, and the insulator having the joined inner layer 62a and the joined outer layer 62b. The portion 62 is formed. The insulating portion 61 and the insulating portion 62 suppress the outflow of the solder of the bonding portion 31 and the bonding portion 32.

  The inner layer 61 a of the terminal 11 and the inner layer 61 a of the terminal 21 may be joined via a part of the outer layer 61 b pushed out from between the terminal 11 and the terminal 21. The inner layer 62 a of the terminal 12 and the inner layer 62 a of the terminal 22 may be joined via a part of the outer layer 62 b pushed out from between the terminal 12 and the terminal 22. Thus, even when a part of the outer layer 61b is interposed between the inner layers 61a facing each other in the vertical direction and a part of the outer layer 62b is interposed between the inner layers 62a, these and the remaining portions of the outer layer 61b and the outer layer 62b Then, it is possible to suppress the outflow of the solder of the joint part 31 and the joint part 32.

  Further, in this case, a material which is cured at a temperature higher than the melting point of the solder used for the terminals 11 and 21, the terminals 12 and the terminals 22 is used for the inner layer 61a and the outer layer 61b and the inner layer 62a and the outer layer 62b. Said about. Therefore, after the terminals 11 and 21 are joined by melting the solder and the terminals 12 and 22 are joined, the inner layers 61a and the inner layers 62a are joined as described above, the outer layers 61b and the outer layers 62b. They are joined together.

  Besides, for the inner layer 61a and the outer layer 61b, and the inner layer 62a and the outer layer 62b, it is also possible to use a material which is cured at a temperature lower than the melting point of the solder used for the terminals 11 and 21 and the terminals 12 and 22. In this case, the outer layer 61b and the outer layer 62b are pushed out by pressure, and the inner layer 61a and the inner layer 62a are joined to each other, and the outer layer 61b and the outer layer 62b are joined to each other. The terminal 21 is joined, and the terminal 12 and the terminal 22 are joined. Even with such a method, it is possible to form a junction structure as shown in FIG. 7 (B).

  After or together with the formation of the bonding portion 31 and the bonding portion 32 and the insulating portion 61 and the insulating portion 62 as described above, in the uncured resin 51a of the sealing material 50a (FIG. 7A), The heating causes aggregation of the filler 52a. When the heating temperature is equal to or higher than the melting point of the solder used for the filler 52a, bonding between the fillers 52a occurs. For example, in the case of causing aggregation and bonding of the filler 52a after the formation of the bonding portion 31, the bonding portion 32, the insulating portion 61, and the insulating portion 62, Sn-Ag-Cu solder (Ag: 3 wt%, Cu: 0.5 wt) In the case of the filler 52a using%), aggregation and bonding of the filler 52a are caused by heating to 220 ° C. or higher.

  At the time of aggregation and bonding of the filler 52a, the convex 13 and the convex 23 are provided on the electronic component 10 and the electronic component 20, respectively, to provide the solder of the filler 52a with wettability. Aggregation and bonding of the filler 52 a also occur in the portion 23. As a result, an aggregate of the filler 52a extending from the convex portion 13 to the convex portion 23 is formed, and the electronic component 10 as shown in FIG. 7B is made electronic by joining the fillers 52a to each other by melting the solder. The conductor portion 40 extending to the component 20 is effectively formed.

  Even when the convex portion 13 and the convex portion 23 are not provided, it is possible to form an aggregate of the filler 52 a having such a height as to extend from the electronic component 10 to the electronic component 20 by heating. By adjusting the heating conditions (time, temperature, etc.), the material of the resin 51a, the content of the filler 52a, etc., an aggregate of the filler 52a of such height is formed, and it extends from the electronic component 10 to the electronic component 20. It is also possible to form the conductor portion 40.

  After the formation of the bonding portion 31 and the bonding portion 32, the insulating portion 61 and the insulating portion 62, and the conductor portion 40, the resin 51a is cured by heating to the curing temperature of the resin 51a covering the periphery thereof. The stopper 50 is formed. For example, the resin 51 a is cured by heating at 250 ° C. to form the sealing material 50. Thereby, the electronic device 3 as shown in FIG. 7B is obtained.

  In the step of bonding the electronic component 10 and the electronic component 20, the temperature at which the bonding portion 31 and the bonding portion 32, the insulating portion 61 and the insulating portion 62, the conductor portion 40, and the sealing material 50 as described above are formed. By raising the temperature by the profile, it is possible to obtain the electronic device 3.

The electronic device 3 can be provided with a heat dissipation member in at least one of the electronic component 10 and the electronic component 20 contained therein.
FIG. 8 is a view showing another example of the electronic device according to the third embodiment. FIG. 8 schematically shows the cross section of the main part of another example of the electronic device according to the third embodiment.

  The electronic device 3a shown in FIG. 8 includes adjacent bonding portions 31 and 32 connecting the electronic component 10 and the electronic component 20, an insulating portion 61 and an insulating portion 62 covering them, and the adjacent bonding portion 31. A conductor portion 40 provided between the joint portion 32 and the joint portion 32 is provided. The conductor portion 40 is provided to extend from the electronic component 10 to the electronic component 20. A sealing material 50 is provided between the electronic component 10 and the electronic component 20. Then, the heat dissipation member 70 is provided on one of the electronic components 20.

  As the heat radiating member 70, for example, a cooling plate or a lid formed using a conductor material such as Cu or aluminum (Al) can be used. The heat dissipation member 70 may be provided with a needle-like or plate-like fin. The heat dissipation member 70 is provided directly on the electronic component 20 or via a material (not shown) such as a thermal interface material (TIM) and is thermally connected to the electronic component 20. There is.

  In the electronic device 3a having the above configuration, for example, when the electronic component 20 is a heat generating component such as a semiconductor chip, the heat generated by the electronic component 20 is transferred to the heat dissipation member 70, and from the heat dissipation member 70 to the electronic device 3a. The heat is dissipated to the outside of the Furthermore, the heat generated in the electronic component 20 is also transferred to the electronic component 10 joined by the junction part 31 and the junction part 32, and is dissipated from the electronic component 10 to the outside of the electronic device 3a.

  In the electronic device 3 a, in addition to the bonding portion 31 and the bonding portion 32, the conductor portion 40 is provided between the electronic component 20 and the electronic component 10, so that the conductor portion 40 can also be manufactured from the electronic component 20. Act as a heat transfer path to 10 Thereby, the heat conduction efficiency from the electronic component 20 to the electronic component 10 is enhanced, the heat radiation efficiency from the electronic component 10 and the electronic component 20 and the cooling efficiency of the electronic component 20 are enhanced, and the overheating of the electronic component 20 is effectively suppressed. It is possible to By providing the conductor portion 40, it is possible to suppress the performance deterioration due to the overheating of the electronic component 20 that generates heat, and to improve the reliability of the electronic component 20 that generates heat and the electronic device 3a including such an electronic component 20. .

  In the electronic device 3a (as an example) having the configuration as shown in FIG. 8, the insulation between the adjacent joint 31 and the joint 32, and the temperature difference between the electronic component 10 and the electronic component 20. The evaluation results of are shown in Table 1 below.

  In Table 1, for comparison, an electronic device 3A as illustrated in FIG. 9A (referred to as comparative example 1) and an electronic device 3B as illustrated in FIG. 9B as comparative example 2 (comparative example 2) The results obtained by carrying out the same evaluation with respect to) are shown together.

  FIG. 9A and FIG. 9B are views showing an example of the electronic device according to another embodiment (comparative examples 1 and 2), and schematically showing the cross section of the main part. The electronic device 3A of FIG. 9A is different from the electronic device 3a in that the insulating portion 61, the insulating portion 62, and the conductor portion 40 are not provided. The electronic device 3B in FIG. 9B is different from the electronic device 3a in that the above-described conductor portion 40 is not provided. Between the electronic component 10 and the electronic component 20 of the electronic device 3A and the electronic device 3B, the sealing material 50 in which the resin 51a as described above is cured and the filler 52a included therein are provided. There is.

  Here, as the electronic component 20, a semiconductor chip having a planar size of 10 mm × 10 mm and 1000 terminals provided with solder on a Cu electrode on the periphery thereof is used. In addition, as the electronic component 10, a circuit board having a planar size of 20 mm × 20 mm and provided with a Cu electrode terminal at a position corresponding to the terminal of the electronic component 20 is used.

In Table 1, the case where the short circuit did not occur between the adjacent junctions 31 and the junction 32 is represented by “o”, and the case where the short circuit occurs is represented by “x”.
From Table 1, in the electronic device 3a (example) having the configuration as shown in FIG. 8, conduction was achieved at all the junctions 30, and no short circuit occurred between the adjacent junctions 31 and the junctions 32. The temperature difference between the electronic component 10 and the electronic component 20 was measured to be 1.1 ° C.

  Further, in the electronic device 3A (comparative example 1) having the configuration as shown in FIG. 9A, conduction is achieved at all the bonding portions 30, but a short circuit occurs between the adjacent bonding portion 31 and the bonding portion 32. Was confirmed. In the electronic device 3A, in the process of bonding the electronic component 10 with the electronic component 20 via the resin 51a containing the conductive filler 52a, the conductive filler 52a includes the adjacent bonding portion 31 and the bonding portion 32. It is considered that cohesion, bonding, and a short circuit have occurred to connect the two. The temperature difference between the electronic component 10 and the electronic component 20 was 0.6.degree.

  Further, in the electronic device 3B (comparative example 2) having the configuration as shown in FIG. 9B, all the junctions 30 were conducted, and no short circuit occurred between the adjacent junctions 31 and the junction 32. . The temperature difference between the electronic component 10 and the electronic component 20 was 0.6.degree. In the electronic device 3B, the conductor portion 40 serving as a heat conduction path connecting the electronic component 10 and the electronic component 20 is not formed, whereby sufficient thermal conductivity and heat dissipation to the outside (from the electronic component 10) can be obtained. It is considered that heat dissipation can not be obtained.

In the electronic device 3a, the heat generated by the electronic component 20 can be dissipated from the heat dissipation member 70, efficiently transferred to the electronic component 10, and also dissipated from the electronic component 10.
In the electronic device 3a, the short circuit between the adjacent joint portion 31 and the joint portion 32 is suppressed by the insulating portion 61 and the insulating portion 62, and the thermal conductivity between the electronic component 10 and the electronic component 20 to the outside, It is possible to improve the heat dissipation by the conductor portion 40.

Next, a fourth embodiment will be described.
Here, an example of the method of joining the electronic component 10 and the electronic component 20 described in the third embodiment will be described in more detail as a fourth embodiment.

  10 to 18 are explanatory diagrams of an example of the electronic component bonding method according to the fourth embodiment. FIGS. 10 to 18 schematically show the cross-sections of relevant parts in each step in an example of the method of bonding electronic components according to the fourth embodiment. Hereinafter, each process will be described in order.

FIG. 10 is a schematic sectional view of an essential part of an example of the sealing material disposing step according to the fourth embodiment.
First, the electronic component 10 is prepared according to the example of the method of FIG. As shown in FIG. 10, the electronic component 10 has a terminal 11, a terminal 12 and a projection 13 on the main body 10a. The electronic component 10 further includes an inner layer 61a and an inner layer 62a covering the side surfaces of the terminals 11 and 12, and an outer layer 61b and an outer layer 62b covering the upper surfaces of the terminals 11 and 12 and the inner layers 61a and 62a.

  As shown in FIG. 10, on the prepared electronic component 10, the sealing material 50a including the resin 51a containing the filler 52a is supplied by a coating method or the like, and the electronic component 10 is supplied with the sealing material 50a. It is placed on the bonding stage 200.

FIG. 11 is a schematic sectional view of an essential part of an example of the electronic component disposing step according to the fourth embodiment.
Similar to the electronic component 10, the electronic component 20 to be bonded to the electronic component 10 is prepared according to the example of the method of FIG. As shown in FIG. 11, the electronic component 20 has a terminal 21, a terminal 22 and a protrusion 23 on the main body 20 a. The electronic component 20 further includes an inner layer 61a and an inner layer 62a covering the side surfaces of the terminal 21 and the terminal 22, and an outer layer 61b and an outer layer 62b covering the upper surface of the terminal 21 and the terminal 22, and the inner layer 61a and the inner layer 62a.

  As shown in FIG. 11, using the bonding head 210 of the flip chip bonder, the prepared electronic components 20 are aligned with the terminals 11 and 21 and the terminals 12 and 22 above the electronic components 10 (see FIG. They are arranged opposite to each other in FIG.

FIG.12 and FIG.13 is a principal part cross-sectional schematic diagram of an example of the 1st heating process which concerns on 4th Embodiment.
As shown in FIG. 12, using the bonding head 210, the electronic component 20 is pressed to the electronic component 10 while heating 220 (shown by thick arrows in FIG. 12). In that case, first, the outer layer 61b is heated by heating (heating 220) at a temperature at which the semi-cured outer layer 61b and the outer layer 62b are not cured and the terminals 11 and 21 and the terminals 12 and 22 do not melt. The outer layers 62b are brought into contact with each other.

  When heating and pressing further progress, the semi-cured outer layer 61b is pushed out from the gap, the terminals 11 and the terminals 21 contact, and the semi-cured outer layer 62b is extruded from the gap, and the terminals 12 and 22 are It comes in contact. In a state in which the terminals 11 and 21 are in contact and the terminals 12 and 22 are in contact, as shown in FIG. 13, heating 221 is performed at a temperature higher than the melting point of the solder used for them, for example 140.degree. The terminal 11 and the terminal 21 are joined, and the terminal 12 and the terminal 22 are joined. Thus, the bonding portion 31 between the terminal 11 and the terminal 21 and the bonding portion 32 between the terminal 12 and the terminal 22 are formed.

FIG. 14 is a schematic cross-sectional view of main parts of an example of the second heating process according to the fourth embodiment, and FIG. 15 is a schematic cross-sectional view of main parts of an example of the third heating process according to the fourth embodiment.
As shown in FIG. 14, heating 222 is further performed at a high temperature, for example, 160 ° C. to 170 ° C., and the inner layers 61 a provided on the side surfaces of the terminals 11 and 21 and the inner layers 62 a provided on the side surfaces of the terminals 12 and 22 are Join. When the inner layer 61a and the inner layer 62a are in a semi-cured state in the preparation step of the electronic component 10 and the electronic component 20, the inner layers 61a and the inner layers 62a facing each other are integrated without breaks as shown in FIG. It becomes easy to do. However, the inner layers 61a facing each other and the inner layers 62a facing each other do not necessarily have to be integrally integrated in this manner, and the inner layers 61a facing each other and the inner layers 62a contacting each other are integrated. It may be a structured structure. By integrating and curing the inner layers 61a facing each other and the inner layers 62a facing each other, outflow of the solder of the bonding portion 31 and the bonding portion 32 when heating is performed at a higher temperature thereafter is suppressed.

  As shown in FIG. 15, by performing heating 223 at a high temperature, for example, 170 to 180 ° C., the outer layers 61 b of the terminals 11 and 21 have higher curing temperatures than the inner layer 61 a and the inner layer 62 a, and the terminals 12 and 22 The outer layers 62b of the The outer layer 61b and the outer layer 62b are in a semi-hardened state at the preparation stage of the electronic component 10 and the electronic component 20, so that the outer layers 61b and the outer layers 62b facing each other are integrally integrated without breaks as shown in FIG. It is easy to The solders of the bonding portion 31 and the bonding portion 32 when heating is performed at a higher temperature thereafter by the outer layer 61b, the outer layer 62b, and the inner layer 62a, which are previously cured, are integrated and cured. Outflow is effectively suppressed. Further, the diffusion of the solder component from the bonding portion 31 and the bonding portion 32 after bonding is suppressed.

By the steps shown in FIGS. 14 and 15, the insulating portion 61 covering the bonding portion 31 and the insulating portion 62 covering the bonding portion 32 are formed.
FIG.16 and FIG.17 is a principal part cross-section schematic diagram of an example of the 4th heating process which concerns on 4th Embodiment.

  As shown in FIG. 16, heating 224 is performed at a higher temperature, for example, 220 ° C., which is a temperature higher than the melting point of the solder contained in the filler 52a. Thereby, as shown in FIG. 16, the filler 52a is coagulated in the uncured resin 51a, and as shown in FIG. 17, the solder contained in the filler 52a is melted to join the fillers 52a.

  The aggregation and bonding of the filler 52a also occur in the convex portion 13 and the convex portion 23 provided to the electronic component 10 and the electronic component 20, respectively, which show wettability to the solder of the filler 52a. As a result, an aggregate of fillers 52a extending from the convex portions 13 to the convex portions 23 is formed (FIG. 16), and the electronic components 10 to the electronic components 20 are joined by joining the fillers 52a to each other by melting the solder (FIG. 17). Are effectively formed.

  When the filler 52a is provided with a solder that is melted by the heating 224 on the surface of the core particle that is not melted by the heating 224 at the above temperature, the filler 52a is as shown in FIG. In the state, the conductor portion 40 which is aggregated and joined is formed.

FIG. 18 is a schematic sectional view of an essential part of an example of a fifth heating step according to the fourth embodiment.
After the formation of the conductor portion 40 as described above, as shown in FIG. 18, heating 225 is performed at a temperature at which the resin 51a (FIG. 16, FIG. 17 etc.) cures, for example 250.degree. The material is cured to form a sealing material 50. As a result, adjacent junctions 31 and junctions 32 joining the electronic component 10 and the electronic component 20, the insulators 61 and insulators 62 covering them respectively, and the junctions 31 and 32 disposed adjacent to each other are provided. Thus, the electronic device 3 including the sealed conductor portion 40 and the sealing material 50 is obtained.

  As described above, the electronic device 3 is heated (heated) to a temperature at which the resin 51a, which is a material of the sealing material 50 interposed between the electronic component 10 and the electronic component 20, is cured (ie, the above heating 221 to 225). Thus, the bonding portion 30, the insulating portion 60, and the conductor portion 40 can be formed and obtained. As the temperature conditions, the temperature conditions such as the temperature of heating 221 <the temperature of heating 222 <the temperature of heating 223 <the temperature of heating 224 <the temperature of heating 225 can be adopted.

If the electronic device 3 having the configuration as shown in FIG. 18 is finally obtained, the order of the steps of performing the heating 221 to 225 is not necessarily limited to this example.
The fifth embodiment will now be described.

Here, another example of a method of bonding the electronic component 10 and the electronic component 20 will be described as a fifth embodiment.
FIGS. 19-24 is explanatory drawing of an example of the electronic component joining method based on 5th Embodiment. FIGS. 19 to 24 schematically show the cross-sections of relevant parts in each step in an example of the electronic component bonding method according to the fifth embodiment. Hereinafter, each process will be described in order.

FIG. 19 is a schematic cross-sectional view of main parts of an example of the electronic component arranging step according to the fifth embodiment, and FIG. 20 is a schematic cross-sectional view of main parts of an example of a terminal bonding step according to the fifth embodiment.
In this method, first, an electronic component 10 and an electronic component 20 as shown in FIG. 19 are prepared. The electronic component 10 has a terminal 11 and a terminal 12 and a protrusion 13 provided on the main body 10 a. The electronic component 20 has a terminal 21 and a terminal 22 provided on the main body 20a and a convex portion 23, and further, an outer layer 61b and an outer layer 62b of a semi-cured resin formed on the surface of the terminal 21 and the terminal 22 respectively. Have.

  The prepared electronic component 10 is placed on the bonding stage 200 as shown in FIG. Then, as shown in FIG. 19, the prepared electronic component 20 is made to face each other with the positions of the terminals 11 and 21 and the terminals 12 and 22 above the electronic component 10 by using the bonding head 210. It arrange | positions and it pressurizes to the electronic component 10 side (it illustrates by the thick arrow in FIG. 19).

  By pressing the electronic component 20 to the electronic component 10 side, as shown in FIG. 20, the semi-cured outer layer 61b is pushed out from the gap, the terminal 11 and the terminal 21 are in contact, and the semi-cured outer layer 62b is The terminal 12 and the terminal 22 come in contact with each other by being pushed out from the gap. The resin of the outer layer 61b extruded from between the terminals 11 and 21 flows downward, covers the side surface of the lower terminal 11, and the resin of the outer layer 62b extruded from between the terminals 21 and 22 is , Flows downward and covers the side surface of the lower terminal 21 (shown by a dotted arrow in FIG. 20).

  In such a state, heating 230 is performed at a temperature equal to or higher than the melting point of the solder used for the terminals 11 and 21 and the terminals 12 and 22, and the bonding portion 31 between the terminals 11 and 21, the terminals 12 and the terminals A junction 32 with 22 is formed. Furthermore, heating 230 is performed at a temperature at which the outer layer 61 b and the outer layer 62 b are cured, thereby forming a single-layer insulating portion 61 covering the bonding portion 31 and a single-layer insulating portion 62 covering the bonding portion 32. The heating temperature when forming the bonding portion 31 and the bonding portion 32 may be the same as or different from the heating temperature when forming the insulating portion 61 and the insulating portion 62.

FIG. 21 is a schematic cross-sectional view of main parts of an example of the sealing material supply step according to the fifth embodiment.
As shown in FIG. 21, after forming the bonding portion 31 and the bonding portion 32 and the insulating portion 61 and the insulating portion 62, the resin 51 a containing the conductive filler 52 a is included between the electronic component 10 and the electronic component 20. The sealing material 50a is supplied. Supply of the sealing material 50a is performed using a dispenser or the like. For example, based on the gap between the electronic component 10 and the electronic component 20, the viscosity of the sealing material 50a, the content of the filler 52a, and the like are adjusted.

FIG. 22 is a schematic cross-sectional view of main parts of an example of the filler aggregation process according to the fifth embodiment, and FIG. 23 is a schematic cross-sectional view of main parts of an example of the filler bonding process according to the fifth embodiment.
In a state where the sealing material 50a is supplied between the electronic component 10 and the electronic component 20, as shown in FIG. 22, at a temperature at which the resin 51a is not cured and at a temperature above the melting point of the solder contained in the filler 52a. Heating 231 is performed. Thus, as shown in FIG. 22, the filler 52a is coagulated in the uncured resin 51a, and as shown in FIG. 23, the solder contained in the filler 52a is melted to join the fillers 52a.

  The aggregation and bonding of the fillers 52 a also occur in the convex portions 13 and the convex portions 23 showing wettability of the solder of the filler 52 a of the electronic component 10 and the electronic component 20. As a result, an aggregate of fillers 52a extending from the convex portions 13 to the convex portions 23 is formed (FIG. 22), and the electronic components 10 to the electronic components 20 are joined by joining the fillers 52a to each other by melting the solder (FIG. 23). Are effectively formed.

  When the filler 52a is provided with a solder that is melted by the heating 231 on the surface of the core particle that is not melted by the heating 231 at the above temperature, the filler 52a is as shown in FIG. In the state, the conductor portion 40 which is aggregated and joined is formed.

FIG. 24 is a schematic cross-sectional view of main parts of an example of the resin curing step according to the fifth embodiment.
After the formation of the conductor portion 40 as described above, as shown in FIG. 24, heating 232 is performed at a temperature at which the resin 51 a cures, the resin 51 a is cured, and the sealing material 50 is formed. As a result, adjacent junctions 31 and junctions 32 joining the electronic component 10 and the electronic component 20, the insulators 61 and insulators 62 covering them respectively, and the junctions 31 and 32 disposed adjacent to each other are provided. Thus, the electronic device 3 b including the sealed conductor portion 40 and the sealing material 50 is obtained.

  Although the electronic component 10 in which the terminals 11 and 12 project from the main body 10a is described as an example here, the method as described in the fifth embodiment includes the terminals 11 and 12 from the main body 10a. The same applies to the electronic component 10 in which the In this case, the outer layer 61b and the outer layer 62b are used to press the electronic component 20 to the electronic component 10 side. 10a)). The subsequent steps can be performed according to the examples of FIGS.

Next, a sixth embodiment will be described.
Here, a configuration example of the convex portion 13 and the convex portion 23 provided on the electronic component 10 and the electronic component 20 will be described as a sixth embodiment.

  FIG. 25 is a view showing a first configuration example of the convex portion according to the sixth embodiment, and FIG. 26 is a view showing a second configuration example of the convex portion according to the sixth embodiment. FIGS. 25 (A) and 25 (B) schematically show principal planes of an electronic component provided with the convex portion of the first configuration example according to the sixth embodiment. FIGS. 26 (A) and 26 (B) schematically show principal planes of electronic parts provided with the convex portion of the second configuration example according to the sixth embodiment.

Here, for the sake of convenience, an electronic component 100 corresponding to the electronic component 10 or the electronic component 20 before bonding will be described.
The electronic component 100 shown in FIGS. 25 (A) and 25 (B) and FIGS. 26 (A) and 26 (B) corresponds to the electronic component 10 or the electronic component 20 described above. The terminals 110 shown in FIGS. 25A and 25B and FIGS. 26A and 26B correspond to the terminal 11 and the terminal 12 described above, or the terminal 21 and the terminal 22 described above. The convex portion 130 shown in FIGS. 25 (A) and 25 (B), 26 (A) and 26 (B) corresponds to the convex portion 13 or the convex portion 23 described above.

  For example, as shown in FIG. 25A, in the electronic component 100, the adjacent ones of the terminals 110 arranged in the longitudinal direction P and the adjacent ones of the terminals 110 arranged in the lateral direction Q are adjacent to each other. The protruding portions 130 can be provided between the terminals 110. Further, in the electronic component 100, for example, as shown in FIG. 25B, the convex portions 130 can be provided between the adjacent terminals 110 of the group of the terminals 110 arranged in the oblique direction R, respectively. In this manner, the projections 130 can be interspersed between the adjacent terminals 110. The planar shape of the convex portion 130 to be scattered is not limited to a circle, but may be an ellipse, a polygon, or a substantially polygonal shape with rounded corners. The protrusions 130 to be scattered are not limited to a pyramidal shape, but may be a columnar shape, a substantially conical shape having a rounded tip, or a substantially columnar shape. Further, a plurality of convex portions 130 may be interspersed between the adjacent terminals 110.

  Besides, as shown in FIG. 26A, the electronic component 100 can be provided with a linear protrusion 130 extending in the longitudinal direction P between the array of the terminals 110 in the longitudinal direction P adjacent to each other. . The electronic component 100 may be provided with a line-shaped convex portion 130 extending in the lateral direction Q between the arrangement of the terminals 110 in the lateral direction Q adjacent to each other. Further, as shown in FIG. 26B, for example, grid-like convex portions 130 extending in the vertical direction P and the horizontal direction Q can be provided in the electronic component 100. Thus, the convex portion 130 can be extended to pass between the adjacent terminals 110. The protruding portion 130 to be extended is not limited to one in which the cross-sectional shape in the thickness direction of the electronic component 100 (the depth direction in FIG. 26) becomes a triangle, but may be a polygon or a substantially polygon with rounded corners. it can. Also, a plurality of rows of projections 130 may be extended between the adjacent terminals 110.

  When electronic parts 100 provided with such a convex part 130 are joined, the position of terminal 110 like FIGS. 25 (A) and 25 (B) and 26 (A) and 26 (B) etc. The junctions 30 are formed on the Furthermore, the conductor part 40 is formed in the position of the convex part 130 like FIG. 25 (A) and FIG. 25 (B) and FIG. 26 (A) and FIG. 26 (B).

  By forming the conductor portion 40, the thermal conductivity between the electronic components 100 to be joined is enhanced. The arrangement of the projections 130 makes it possible to adjust the arrangement of the conductor portions 40 between the electronic components 100 to be joined, the volume of the conductor portion 40 occupied in the gap between the electronic components 100 to be joined, and the like.

Next, a seventh embodiment will be described.
In the above description, the convex portion 130 protruding from the main body portion 100a of the electronic component 100, the convex portion 13 protruding from the main body portion 10a of the electronic component 10, and the convex portion 23 protruding from the main body portion 20a of the electronic component 20 are illustrated. did. Besides, in the electronic component 100, the electronic component 10 and the electronic component 20, instead of the convex portion 130, the convex portion 13 and the convex portion 23, respectively, the main portion 100a, the main portion 10a and the main portion 20a are recessed toward the inside A recess can also be provided. An electronic device provided with such a recess will be described as a seventh embodiment.

FIG. 27 is a view showing an example of the electronic device according to the seventh embodiment. FIG. 27 schematically shows the cross section of the main part of an example of the electronic device according to the seventh embodiment.
The electronic device 4 shown in FIG. 27 includes the electronic component 10 and the electronic component 20 joined at the junction 30, the insulating unit 60 covering the junction 30, the conductor 40 extending from the electronic component 10 to the electronic component 20, and the electronic component A sealing material 50 is provided between the electronic component 10 and the electronic component 20. In the electronic device 4, the electronic component 10 and the electronic component 20 are respectively provided with the recess 14 and the recess 24 between the adjacent bonding portions 30. The conductor portion 40 is provided so as to extend from the recess 14 to the recess 24 (or from the recess 24 to the recess 14).

  Also when the recess 14 and the recess 24 are provided in the electronic component 10 and the electronic component 20, respectively, the filler 52a using solder of the sealing material 50a to be interposed at the time of bonding is Cohesion can be made between the recess 14 and the recess 24. For the inner surfaces of the recess 14 and the recess 24, a material that is wetted when the solder of the filler 52a is melted is used.

  Even in the electronic device 4 provided with such a recess 14 and a recess 24, when the electronic component 10 and the electronic component 20 are joined, the conductor portion 40 extending between them can be formed, and the thermal conductivity can be improved. .

  As described above, a semiconductor chip, a semiconductor package including a semiconductor chip, or a circuit board can be used for the electronic component 10 and the electronic component 20 described above. Configuration examples of the semiconductor chip, the semiconductor package, and the circuit board will be described with reference to FIGS. 28 to 31 below.

FIG. 28 is a view showing a configuration example of a semiconductor chip. FIG. 28 schematically shows the cross section of an example of the semiconductor chip.
The semiconductor chip 300 shown in FIG. 28 has a semiconductor substrate 310 provided with circuit elements such as transistors, and a wiring layer 320 provided on the semiconductor substrate 310.

  As the semiconductor substrate 310, in addition to a substrate of silicon (Si), germanium (Ge), silicon germanium (SiGe) or the like, a substrate of gallium arsenide (GaAs), indium phosphide (InP) or the like is used. Such semiconductor substrates 310 are provided with circuit elements such as transistors, capacitors, and resistors. A MOS (Metal Oxide Semiconductor) transistor 330 is illustrated in FIG. 28 as an example of a circuit element.

  The MOS transistor 330 is provided in an element region defined by the element isolation region 310 a provided in the semiconductor substrate 310. MOS transistor 330 has gate electrode 332 formed on semiconductor substrate 310 via gate insulating film 331, and source region 333 and drain region 334 formed in semiconductor substrate 310 on both sides of gate electrode 332. An insulating film spacer 335 (sidewall) is provided on the side wall of the gate electrode 332.

  A wiring layer 320 is provided on a semiconductor substrate 310 provided with such a MOS transistor 330 and the like. The wiring layer 320 has a conductor 321 (wiring and via) electrically connected to the MOS transistor 330 and the like provided on the semiconductor substrate 310, and an insulator 322 covering the conductor 321. As an example, FIG. 28 shows a conductor 321 electrically connected to the source region 333 and the drain region 334 of the MOS transistor 330. For the conductor 321, various conductor materials such as Cu are used. For the insulator 322, an inorganic insulating material such as silicon oxide or an organic insulating material such as a resin is used.

A terminal 340 (corresponding to the above terminals 11, 12, 21, and 22) is provided to be electrically connected to the conductor 321 of the wiring layer 320.
FIG. 29 is a view showing a configuration example of a semiconductor package. 29 (A) and 29 (B) schematically show the cross section of an example of the semiconductor package.

  The semiconductor package 400 shown in FIG. 29A includes a package substrate 410 (circuit substrate), a semiconductor chip 420 mounted on the package substrate 410, and a sealing material 430 for sealing the semiconductor chip 420.

  For the package substrate 410, for example, a printed circuit board is used. The package substrate 410 includes a conductor 411 (wiring and via) and an insulator 412 covering the conductor 411. For the conductor 411, various conductor materials such as Cu are used. For the insulator 412, a resin material such as a phenol resin, an epoxy resin, or a polyimide resin, a composite resin material in which such a resin material is impregnated into glass fiber or carbon fiber, or the like is used.

  The semiconductor chip 420 is adhered and fixed on such a package substrate 410 by a die attach material 440 such as a resin or a conductive paste, and is electrically connected (wire bonding) to the package substrate 410 by a wire 450. The semiconductor chip 420 and the wires 450 on the package substrate 410 are sealed by a sealant 430. For the sealing material 430, a resin material such as an epoxy resin, a material in which such a resin material contains an insulating filler, or the like is used.

  A terminal 460 (corresponding to the above terminals 11, 12, 21 and 22) is provided on the side of the package substrate 410 opposite to the mounting surface of the semiconductor chip 420 so as to be electrically connected to the conductor 411.

  A plurality of semiconductor chips 420 may be mounted on the package substrate 410, and in addition to the semiconductor chip 420, other electronic components such as a chip capacitor may be mounted.

  The semiconductor package 500 shown in FIG. 29B includes a package substrate 510 (circuit substrate), a semiconductor chip 520 mounted over the package substrate 510, and a sealing material 530 covering the semiconductor chip 520.

  For the package substrate 510, for example, a printed circuit board is used. The package substrate 510 includes a conductor 511 (wiring and via) such as Cu and an insulator 512 such as a resin material covering the conductor 511.

  The semiconductor chip 520 is electrically connected (flip chip bonding) to such a package substrate 510 by the solder 540 (bump) provided thereon. An encapsulant 541 is filled between the package substrate 510 and the semiconductor chip 520. The semiconductor chip 520 on the package substrate 510 is sealed by a sealing material 530. For the sealing material 530, a resin material such as an epoxy resin, a material in which such a resin material contains an insulating filler, or the like is used.

  A terminal 550 (corresponding to the above terminals 11, 12, 21 and 22) is provided on the side of the package substrate 510 opposite to the mounting surface of the semiconductor chip 520 so as to be electrically connected to the conductor 511.

  A plurality of semiconductor chips 520 may be mounted on the package substrate 510, and in addition to the semiconductor chip 520, other electronic components such as chip capacitors may be mounted.

Also, a so-called pseudo SoC (System on Chip) as shown in the following FIG. 30 can be used for the semiconductor package.
FIG. 30 is a view showing a configuration example of a semiconductor package. FIG. 30 schematically shows the cross section of the main part of another example of the semiconductor package.

  The semiconductor package 600 shown in FIG. 30 includes a resin layer 610, a plurality of (two as an example here) semiconductor chips 620 embedded in the resin layer 610, and a wiring layer 630 (rewiring provided on the resin layer 610). Layer).

  The semiconductor chip 620 is embedded in the resin layer 610 so that the arrangement surface of the terminal 620a is exposed. The wiring layer 630 includes a conductor 631 (rewiring and via) such as Cu and an insulator 632 such as a resin material covering the conductor 631.

A terminal 640 (corresponding to the above terminals 11, 12, 21 and 22) is provided to be electrically connected to the conductor 631 of the wiring layer 630.
In the resin layer 610, one or more semiconductor chips 620 may be embedded, and in addition to the semiconductor chip 620, another electronic component such as a chip capacitor may be embedded.

FIG. 31 is a view showing a configuration example of a circuit board. 31 (A) and 31 (B) schematically show cross sections of an example of the circuit board.
In FIG. 31A, a multilayer printed circuit board including a plurality of wiring layers is illustrated as the circuit board 700. Similar to the package substrate 410 shown in FIG. 29A and the package substrate 510 shown in FIG. 29B, the circuit substrate 700 is a resin covering the conductor 711 (wiring and via) such as Cu and the conductor 711. And an insulator 712 such as a material.

A terminal 720 (corresponding to the above terminals 11, 12, 21, and 22) is provided to be electrically connected to the conductor 711 of the circuit board 700.
FIG. 31B illustrates a buildup substrate formed using a buildup method as the circuit substrate 800. The circuit substrate 800 includes a core substrate 810, an insulating layer 820 provided on the core substrate 810, a conductor 830 provided on the insulating layer 820, and a via 840 for connecting different conductors 830. For the core substrate 810, a ceramic material, an organic material, or the like is used. For the insulating layer 820, an insulating material such as a prepreg is used. For the conductor 830 and the via 840, a conductor material such as Cu is used.

Terminals 850 (corresponding to the terminals 11, 12, 21 and 22 described above) are provided to be electrically connected to the conductors 830 of the circuit board 800.
For example, using the semiconductor chip 300 as shown in FIG. 28, the semiconductor packages 400, 500, 600 as shown in FIGS. 29 and 30 and the circuit boards 700, 800 as shown in FIG. Is possible.

  The combination of the electronic components to be joined includes, for example, a combination of a semiconductor chip and a circuit board, a combination of a semiconductor package and a circuit board, and a combination of a semiconductor chip and a semiconductor package. In addition to the above, there are combinations of semiconductor chips, combinations of semiconductor packages, and combinations of circuit boards as combinations of electronic components to be joined.

The following appendices will be further disclosed regarding the embodiment described above.
(Supplementary Note 1) The first electronic component,
A second electronic component facing the first electronic component;
Adjacent first joint and second joint joining the first electronic component and the second electronic component,
A conductor portion provided between the first joint portion and the second joint portion and extending from the first electronic component to the second electronic component;
An electronic device comprising: a sealing material for sealing between the first electronic component and the second electronic component.

(Supplementary Note 2) A first insulating portion covering the first bonding portion,
The electronic device according to claim 1, further comprising: a second insulating portion covering the second bonding portion.

(Supplementary Note 3) The first insulating portion includes a first inner layer, and a first outer layer covering the first inner layer,
The electronic device according to claim 2, wherein the second insulating portion includes a second inner layer and a second outer layer covering the second inner layer.

  (Supplementary Note 4) Any one of Supplementary notes 1 to 3 characterized in that the conductor portion extends from a first convex portion provided to the first electronic component to a second convex portion provided to the second electronic component. Electronic device described in.

(Supplementary Note 5) Solder is used for the conductor portion,
The electronic device according to claim 4, wherein a material to which the melted solder gets wet is used for the first convex portion and the second convex portion.

  (Supplementary Note 6) In any one of Supplementary notes 1 to 3, the conductor portion extends from a first recess provided in the first electronic component to a second recess provided in the second electronic component. Electronic device as described.

(Supplementary Note 7) Solder is used for the conductor portion,
The electronic device according to claim 6, wherein a material to which the melted solder gets wet is used for the first recess and the second recess.

(Supplementary Note 8) A step of opposing the first electronic component and the second electronic component
Bonding the adjacent first and second terminals of the first electronic component and the adjacent third and fourth terminals of the second electronic component, respectively;
A conductor portion extending from the first electronic component to the second electronic component between the first joint of the first terminal and the third terminal and the second joint of the second terminal and the fourth terminal. Forming the
Sealing the space between the first electronic component and the second electronic component with a sealing material.

(Supplementary Note 9) Before the step of causing the first electronic component and the second electronic component to face each other, the resin and the resin are contained on the side of the first terminal and the second terminal of the first electronic component. Further comprising the step of providing a resin composition containing the conductive particles.
The step of causing the first electronic component and the second electronic component to face each other includes the step of causing the second electronic component to face the first electronic component provided with the resin composition,
The step of forming the conductor portion includes the step of aggregating the particle group to form the conductor portion between the first bonding portion and the second bonding portion by heating at a first temperature,
The step of sealing with the sealing material includes the step of curing the resin by heating at a second temperature higher than the first temperature to form the sealing material. Method of manufacturing an electronic device as described.

(Supplementary Note 10) The first electronic component has a first convex portion provided between the first terminal and the second terminal,
The second electronic component has a second convex portion provided between the third terminal and the fourth terminal,
The method of manufacturing the electronic device according to claim 8, wherein the step of forming the conductor portion includes the step of forming the conductor portion extending from the first convex portion to the second convex portion.

(Supplementary Note 11) The first electronic component to be opposed includes a first insulating layer covering the first terminal and a second insulating layer covering the second terminal,
The second electronic component to be opposed has a third insulating layer covering the third terminal and a fourth insulating layer covering the fourth terminal.
In the step of bonding the first terminal and the second terminal, and the third terminal and the fourth terminal, respectively,
Pressing the second electronic component toward the first electronic component, and causing the first insulating layer and the third insulating layer to flow out from between the first terminal and the third terminal to form the first terminal; The second terminal and the fourth terminal are brought into contact with the third terminal, and the second insulating layer and the fourth insulating layer are made to flow out from between the second terminal and the fourth terminal. Contacting,
Bonding the first terminal and the third terminal in contact by heating at a third temperature, and bonding the second terminal and the fourth terminal;
And a step of bonding the first insulating layer and the third insulating layer by heating at a predetermined temperature, and bonding the second insulating layer and the fourth insulating layer. A method of manufacturing an electronic device according to any one of 8 to 10.

(Supplementary Note 12) The method according to Supplementary Note 11, wherein the predetermined temperature is higher than the third temperature.
(Supplementary Note 13) The first insulating layer includes a first inner layer covering a side surface of the first terminal, and a first outer layer covering an upper surface of the first terminal and the first inner layer.
The second insulating layer includes a second inner layer covering a side surface of the second terminal, and a second outer layer covering an upper surface of the second terminal and the second inner layer.
The third insulating layer includes a third inner layer covering a side surface of the third terminal, and a third outer layer covering an upper surface of the third terminal and the third inner layer.
The fourth insulating layer includes a fourth inner layer covering a side surface of the fourth terminal, and a fourth outer layer covering an upper surface of the fourth terminal and the fourth inner layer.
In the process of bringing the first terminal and the third terminal into contact with each other and bringing the second terminal and the fourth terminal into contact,
The first outer layer and the third outer layer are made to flow out from between the first terminal and the third terminal to bring the first terminal and the third terminal into contact, and the second terminal and the fourth terminal. Including the step of causing the second outer layer and the fourth outer layer to flow out from between the terminal and the second terminal to bring the second terminal into contact with the fourth terminal;
In the step of bonding the first insulating layer and the third insulating layer by heating at the predetermined temperature, and bonding the second insulating layer and the fourth insulating layer,
Bonding the first inner layer and the third inner layer by heating at a fourth temperature, and bonding the second inner layer and the fourth inner layer;
Supplementary note 11 or 12 including the steps of: bonding the first outer layer and the third outer layer by heating at a fifth temperature; and bonding the second outer layer and the fourth outer layer. The manufacturing method of the electronic device as described in-.

(Supplementary Note 14) A resin between the first electronic component and the second electronic component after the step of bonding the first terminal and the second terminal, and the third terminal and the fourth terminal, respectively. Further comprising the step of providing a resin composition comprising: and the conductive particles contained in the resin,
The step of forming the conductor portion includes the step of aggregating the particle group to form the conductor portion between the first bonding portion and the second bonding portion by heating at a first temperature,
The step of sealing with the sealing material includes the step of curing the resin by heating at a second temperature higher than the first temperature to form the sealing material. The manufacturing method of the electronic device as described.

(Supplementary Note 15) The second electronic component to be opposed has a third insulating layer covering the third terminal, and a fourth insulating layer covering the fourth terminal.
In the step of causing the first electronic component and the second electronic component to face each other,
Disposing the first electronic component with the first terminal and the second terminal facing upward;
Disposing the second electronic component above the first electronic component with the third terminal and the fourth terminal facing the first electronic component.
In the step of bonding the first terminal and the second terminal, and the third terminal and the fourth terminal, respectively,
The second electronic component is pressed toward the first electronic component, and the third insulating layer is made to flow out from between the first terminal and the third terminal to make the first terminal and the third terminal The side face of the first terminal is covered with the third insulating layer which is brought into contact with the second terminal, and the fourth insulating layer is caused to flow out from between the second terminal and the fourth terminal to make the second terminal Contacting the second terminal with the fourth terminal and covering the side surface of the second terminal with the fourth insulating layer that has flowed out;
Additional step of bonding the first terminal and the third terminal in contact by heating at a third temperature, and bonding the second terminal and the fourth terminal. The manufacturing method of the electronic device as described in-.

1, 1A, 1B, 2, 3, 3a, 3b, 3A, 3B, 4 electronic devices 10, 20, 100 electronic parts 10a, 20a, 100a main body parts 11, 12, 21, 22, 110, 340, 460, 550 , 620a, 640, 720, 850 Terminals 13, 23, 130 Protrusions 14, 24 Recesses 30, 31, 31A, 31B, 32, 32A, 32B Junctions 40 Conductors 50, 50A, 50B, 430, 530, 541 Seals Stopper 50a Sealing material 51a, 51A, 51B Resin 52a, 52A, 52B Filler 60, 61, 62 Insulating part 61a, 62a Inner layer 61b, 62b Outer layer 70 Heat dissipation member 160, 170 Insulating film 200 Bonding stage 210 Bonding head 220, 221 , 222, 223, 224, 225, 230, 231, 232 heating 300, 420, 520, 620 Semiconductor chip 310 Semiconductor substrate 310a Element isolation region 320, 630 Wiring layer 321, 411, 511, 631, 711, 830 Conductor 322, 412, 512, 632, 712 Insulator 330 MOS transistor 331 Gate insulation Film 332 gate electrode 333 source region 334 drain region 335 spacer 400, 500, 600 semiconductor package 410, 510 package substrate 440 die attach material 450 wire 540 solder 610 resin layer 700, 800 circuit substrate 810 core substrate 820 insulating layer 840 via

Claims (10)

The first electronic component,
A second electronic component facing the first electronic component;
A first joint portion having a first melting point and a second joint portion having a second melting point , which joins the first electronic component and the second electronic component;
It is provided between the first joint portion and the second joint portion, extends from the first electronic component to the second electronic component, and has a third melting point higher than the first melting point and the second melting point. Conductor portion,
An electronic device comprising: a sealing material for sealing between the first electronic component and the second electronic component. A first insulating portion covering the first bonding portion;
The electronic device according to claim 1, further comprising: a second insulating portion covering the second bonding portion. The first insulating portion includes a first inner layer and a first outer layer covering the first inner layer,
The electronic device according to claim 2, wherein the second insulating portion includes a second inner layer and a second outer layer covering the second inner layer.   The said conductor part is extended in the 2nd convex part provided in the said 2nd electronic component from the 1st convex part provided in the said 1st electronic component, It is characterized by the above-mentioned. Electronic devices.   The said conductor part is extended in the 2nd recessed part provided in the said 2nd electronic component from the 1st recessed part provided in the said 1st electronic component, The electronic as described in any one of the Claims 1 thru | or 3 characterized by the above-mentioned. apparatus. Opposing the first electronic component and the second electronic component;
The first terminal and the second terminal of the first electronic component and the third terminal and the fourth terminal of the second electronic component are respectively joined, and the first melting point of the first terminal and the third terminal is made a first joint portion having, of the second terminal and the fourth terminal, a step of forming a second junction having a second melting point,
By using a conductor material having a first melting point and a third melting point higher than the second melting point between the formed first bonding portion and the second bonding portion, the first electronic component is 2) forming a conductor extending to the electronic component;
Sealing the space between the first electronic component and the second electronic component with a sealing material. Before the step of causing the first electronic component and the second electronic component to face each other, the conductive material is contained in the resin and the resin on the side of the first terminal and the second terminal of the first electronic component. The method further includes the step of providing a resin composition containing the conductive particles used .
The step of causing the first electronic component and the second electronic component to face each other includes the step of causing the second electronic component to face the first electronic component provided with the resin composition,
The step of forming the conductor portion includes the step of aggregating the particle group to form the conductor portion between the first bonding portion and the second bonding portion by heating at a first temperature,
The step of sealing with the sealing material includes a step of curing the resin by heating at a second temperature higher than the first temperature to form the sealing material. The manufacturing method of the electronic device as described in-. The first electronic component has a first convex portion provided between the first terminal and the second terminal,
The second electronic component has a second convex portion provided between the third terminal and the fourth terminal,
The method of manufacturing an electronic device according to claim 6, wherein the step of forming the conductor portion includes the step of forming the conductor portion extending from the first convex portion to the second convex portion. The first electronic component to be opposed includes a first insulating layer covering the first terminal and a second insulating layer covering the second terminal,
The second electronic component to be opposed has a third insulating layer covering the third terminal and a fourth insulating layer covering the fourth terminal.
In the step of bonding the first terminal and the second terminal, and the third terminal and the fourth terminal, respectively,
Pressing the second electronic component toward the first electronic component, and causing the first insulating layer and the third insulating layer to flow out from between the first terminal and the third terminal to form the first terminal; The second terminal and the fourth terminal are brought into contact with the third terminal, and the second insulating layer and the fourth insulating layer are made to flow out from between the second terminal and the fourth terminal. Contacting,
Bonding the first terminal and the third terminal in contact by heating at a third temperature, and bonding the second terminal and the fourth terminal;
Bonding the first insulating layer and the third insulating layer by heating at a predetermined temperature, and bonding the second insulating layer and the fourth insulating layer. Item 9. A method of manufacturing an electronic device according to any one of items 6 to 8. A resin and a resin are provided between the first electronic component and the second electronic component after the step of bonding the first terminal and the second terminal, and the third terminal and the fourth terminal, respectively. And b. Providing a resin composition containing conductive particles containing the conductive material .
The step of forming the conductor portion includes the step of aggregating the particle group to form the conductor portion between the first bonding portion and the second bonding portion by heating at a first temperature,
The step of sealing with the sealing material includes a step of curing the resin by heating at a second temperature higher than the first temperature to form the sealing material. The manufacturing method of the electronic device as described in-.

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