JP6415486B2 - High voltage electrode insulation structure, ion source device, and ion implanter for ion implanter - Google Patents

Description

  The present invention relates to an insulating structure of a high voltage electrode suitable for an ion implantation apparatus.

  An apparatus is known that includes a first metal electrode, a second metal electrode, and an insulator disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface that is exposed to a vacuum between the first metal electrode and the second metal electrode. The apparatus includes a first conductive layer disposed between a first metal electrode and an insulator, and a second metal electrode and an insulator opposite the first conductive layer. And a second conductive layer disposed thereon. The first conductive layer prevents triple junction breakdown from occurring at the interface of the first electrode, insulator, and vacuum. The second conductive layer prevents triple junction breakdown from occurring at the interface of the second electrode, insulator, and vacuum.

  The first and second conductive layers are bonded to the insulator at the atomic level without forming a minute gap. For example, the conductive layer is formed by doping an insulator with metal particles such as aluminum.

Special table 2010-53529

  One exemplary object of one aspect of the present invention is to provide a high voltage electrode insulation structure suitable for an ion implanter.

  According to an aspect of the present invention, an insulating structure of a high voltage electrode for an ion implantation apparatus includes two conductor portions that are electrodes and an insulator interposed between the two conductor portions. The two conductor portions are each connected to the insulator. The insulator includes a surface exposed to a vacuum space. Each of the two conductor portions includes a conductor body including a junction region in contact with the insulator, an exposure region to the vacuum space, and a boundary zone between the junction region and the exposure region. At least one of the two conductor portions includes at least one conductor element disposed on the conductor body, and the conductor element is at least part of the boundary zone adjacent to the exposed surface of the insulator. It is provided and is made of a conductive material having a melting point higher than that of the conductor portion.

  According to an aspect of the present invention, an insulating structure of a high voltage electrode for an ion implanter is provided with an insulator having an exposed surface, a junction region in contact with the insulator, and adjacent to the exposed surface of the insulator. And a heat-resistant part provided along at least a part of the edge of the joining region. The heat-resistant portion is disposed with a gap between the exposed surface of the insulator. The heat-resistant part is formed of a conductive material having a melting point higher than that of the conductor part.

  According to an aspect of the present invention, a high voltage insulation method for an ion implanter includes forming a heat-resistant portion adjacent to the exposed surface on a conductor portion supported by an insulator having an exposed surface; Applying a high voltage to the conductor portion. The heat-resistant part is formed of a conductive material having a melting point higher than that of the conductor part.

  According to an aspect of the present invention, an insulating structure of a high voltage electrode for an ion implantation apparatus includes two conductor portions that are electrodes and an insulator interposed between the two conductor portions. The two conductor portions are each connected to the insulator. The insulator includes a surface exposed to the atmospheric space. Each of the two conductor portions includes a conductor main body including a bonding region in contact with the insulator, an exposure region to the atmospheric space, and a boundary zone between the bonding region and the exposure region. At least one of the two conductor portions includes at least one conductor element disposed on the conductor body, and the conductor element is at least part of the boundary zone adjacent to the exposed surface of the insulator. It is provided and is made of a conductive material having a melting point higher than that of the conductor portion.

  According to an aspect of the present invention, an insulating structure of a high voltage electrode for an ion implantation apparatus includes two conductor portions that are electrodes and an insulator interposed between the two conductor portions. The two conductor portions are each connected to the insulator. The insulator includes a first exposed surface to the vacuum space and a second exposed surface to the atmospheric space. Each of the two conductor portions includes a junction region in contact with the insulator, a first exposure region to the vacuum space, a second exposure region to the atmospheric space, the junction region, and the first exposure region. A conductor body comprising a first boundary zone between and a second boundary zone between the junction region and the second exposed region. At least one of the two conductor portions comprises at least one conductor element disposed in the conductor body, the conductor element being adjacent to the exposed surface of the insulator and the first boundary zone and / or It is provided in at least a part of the second boundary zone and is formed of a conductive material having a melting point higher than that of the conductor portion.

  According to an aspect of the present invention, an insulating structure of a high voltage electrode for an ion implantation apparatus includes two conductor portions that are electrodes and an insulator interposed between the two conductor portions. The two conductor portions are each connected to the insulator. The insulator includes a surface exposed to the fluid space. Each of the two conductor portions includes a conductor body including a joining region in contact with the insulator, an exposed region to the fluid space, and a boundary zone between the joining region and the exposed region. At least one of the two conductor portions includes at least one conductor element disposed on the conductor body, and the conductor element is at least part of the boundary zone adjacent to the exposed surface of the insulator. It is provided and is made of a conductive material having a melting point higher than that of the conductor portion.

  Note that any combination of the above-described constituent elements and the constituent elements and expressions of the present invention replaced with each other among methods, apparatuses, systems, and the like are also effective as an aspect of the present invention.

  ADVANTAGE OF THE INVENTION According to this invention, the insulation structure of the high voltage electrode suitable for an ion implantation apparatus can be provided.

1 is a diagram schematically showing an ion implantation apparatus according to an embodiment of the present invention. FIG. 2A is a diagram schematically illustrating an ion source device according to an embodiment of the present invention, and FIG. 2B is a schematic diagram illustrating an insulating structure of a high voltage electrode according to an embodiment of the present invention. FIG. 3A is a cross-sectional view schematically showing an insulating structure of a high voltage electrode according to an embodiment of the present invention, and FIG. 3B is a cross-sectional view of the high voltage electrode according to an embodiment of the present invention. It is a top view which shows an insulating structure schematically. FIG. 4 (a) is a cross-sectional view schematically showing an insulating structure of a high voltage electrode according to another embodiment of the present invention, and FIG. 4 (b) is a high voltage according to a further embodiment of the present invention. It is sectional drawing which shows the insulating structure of an electrode roughly. It is sectional drawing which shows schematically the insulation structure of the high voltage electrode which concerns on other embodiment of this invention. It is sectional drawing which shows schematically the insulation structure of the high voltage electrode which concerns on other embodiment of this invention. It is sectional drawing which shows schematically the insulation structure of the high voltage electrode which concerns on other embodiment of this invention. It is sectional drawing which shows schematically the insulation structure of the high voltage electrode which concerns on other embodiment of this invention. It is a top view which shows roughly the insulation structure of the high voltage electrode which concerns on other embodiment of this invention.

  Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and repeated descriptions are omitted as appropriate. Moreover, the structure described below is an illustration and does not limit the scope of the present invention at all.

  FIG. 1 is a diagram schematically showing an ion implantation apparatus 100 according to an embodiment of the present invention. The ion implantation apparatus 100 is configured to perform ion implantation processing on the surface of the workpiece W. The workpiece W is, for example, a substrate, for example, a wafer. Therefore, in the following description, the workpiece W may be referred to as a substrate W for convenience of explanation, but this is not intended to limit the target of the implantation process to a specific object.

  The ion implantation apparatus 100 includes an ion source device 102, a beam line device 104, and an implantation processing chamber 106. The ion implantation apparatus 100 is configured to irradiate the ion beam B over the entire substrate W by at least one of a beam scan and a mechanical scan.

  The ion source device 102 is configured to provide an ion beam B to the beam line device 104. The ion source device 102 will be described later with reference to FIG.

  The beam line device 104 is configured to transport ions from the ion source device 102 to the implantation processing chamber 106. A mass spectrometer 108 is provided downstream of the ion source device 102 and is configured to select necessary ions from the ion beam B.

  The beam line device 104 performs operations including, for example, deflection, acceleration, deceleration, shaping, scanning, etc., on the ion beam B that has passed through the mass spectrometer 108. The beam line device 104 may include, for example, a beam scanning device 110 that scans the ion beam B by applying an electric field or a magnetic field (or both) to the ion beam B. In this way, the beam line device 104 supplies the ion beam B to be irradiated to the substrate W to the implantation processing chamber 106.

  The implantation processing chamber 106 includes an object holding unit 107 that holds one or a plurality of substrates W. The object holding unit 107 is configured to provide relative movement (so-called mechanical scan) with respect to the ion beam B to the substrate W as necessary.

  The ion implantation apparatus 100 also includes a vacuum exhaust system (not shown) for providing a desired vacuum environment to the ion source apparatus 102, the beam line apparatus 104, and the implantation processing chamber 106. The evacuation system is used to evacuate an internal space 118 (see FIGS. 2A and 2B) of an ion source chamber 116 described later.

  The ion implantation apparatus 100 includes a power supply device 111 for the ion source device 102 and other components. The power supply device 111 is configured to apply a DC voltage of, for example, 1 kV or more (for example, several kV to several hundred kV) to the electrodes. The power supply device 111 is used to apply high voltages having different potentials to the ion source chamber 116 and the ion source support 120 (see FIG. 2A). Further, when required, the power supply device 111 may be configured to apply an AC voltage having an effective value of, for example, 1 kV or more to the electrodes.

  FIG. 2A is a diagram schematically showing an ion source device 102 according to an embodiment of the present invention. The ion source device 102 includes an ion source 112, an extraction electrode part 114 for extracting the ion beam B from the ion source 112, and an ion source chamber 116 for accommodating the ion source 112 and the extraction electrode part 114. The ion source chamber 116 is a vacuum container that surrounds an internal space 118 that is evacuated to vacuum.

  The ion source device 102 includes an ion source support 120 that supports the ion source 112 so that the ion source 112 is disposed in the internal space 118. The ion source support unit 120 includes a support plate 122 and a support body 124. One side of the support plate 122 faces the internal space 118 and the opposite side faces the atmospheric pressure environment or the external environment. The support 124 is accommodated in the internal space 118 and connects the ion source 112 to the support plate 122.

  The ion source device 102 includes a bushing 126 for connecting the ion source chamber 116 and the ion source support 120. The bushing 126 is an insulator formed of an insulating material such as ceramic or resin. The bushing 126 is a hollow cylindrical member having a bushing inner wall surface 128 that surrounds the internal space 118. The bushing inner wall surface 128 is exposed to the internal space 118. The bushing 126 includes a bushing outer wall surface 129 exposed to the external space 119. The bushing outer wall surface 129 faces an atmospheric pressure environment or an external environment.

  One end of the bushing 126 is fixed to the first conductor flange 130, and the other end of the bushing 126 is fixed to the second conductor flange 132. The first conductor flange 130 is a part of the ion source chamber 116 and is formed at a portion of the ion source chamber 116 that faces the support plate 122. When the wall portion of the ion source chamber 116 has an outer wall and an inner wall (so-called liner), the first conductor flange 130 may be formed continuously with the inner wall. The second conductor flange 132 is formed on the outer peripheral portion of the support plate 122. Thus, the first conductor flange 130 and the second conductor flange 132 face each other with the bushing 126 interposed therebetween.

  The ion source chamber 116 and the ion source support 120 are formed of a conductive material such as metal (for example, aluminum or aluminum alloy). The first DC voltage is applied to the ion source chamber 116 and the second DC voltage higher than the first DC voltage is applied to the ion source support portion 120 by the above-described power supply device 111 (see FIG. 1). A positive high voltage is applied to each of the ion source chamber 116 and the ion source support 120. Alternatively, a negative high voltage may be applied to the ion source chamber 116 and the ion source support unit 120, respectively. The ion source chamber 116 (or the first conductor flange 130) is referred to as a first conductor part or a first electrode body to which a low voltage is applied, and the ion source support part 120 (or the second conductor flange 132) is applied with a high voltage. It can also be called a second conductor part or a second electrode body.

  In this manner, the ion source chamber 116 (or the first conductor flange 130) is attached to one side of the bushing 126. A connecting portion between the ion source chamber 116 and the bushing 126 (bushing inner wall surface 128) faces the vacuum internal space 118. The ion source support 120 (or the second conductor flange 132) is attached to the other side of the bushing 126. A connection portion between the ion source support portion 120 and the bushing 126 (bushing inner wall surface 128) also faces the internal space 118.

  Therefore, a conductor, an insulator, and a vacuum boundary line (so-called triple point, also referred to as a triple junction) are formed at a connection portion between the ion source chamber 116 and the bushing 126 (bushing inner wall surface 128). Hereinafter, the vicinity of the boundary line may be referred to as a first triple point region 134 for convenience of explanation. Similarly, the boundary between the ion source support 120 and the bushing 126 (bushing inner wall surface 128) is also formed with a conductor, insulator, and vacuum boundary line. Sometimes referred to as a two triple point region 136. The first triple point region 134 and the second triple point region 136 are each formed in an annular shape along the end of the bushing inner wall surface 128. In FIG. 2A and FIG. 2B, the first triple point region 134 and the second triple point region 136 are indicated by broken-line circles.

  The first conductor flange 130 includes a first joining region 138 in contact with the bushing 126 on one side (outside) with the first triple point region 134 as a boundary. The first conductor flange 130 includes a first exposed region 140 exposed in the internal space 118 on the opposite side (inner side) from the first joint region 138 with the first triple point region 134 as a boundary. The first conductor flange 130 includes a first boundary zone 142 between the first joint region 138 and the first exposed region 140. The first boundary zone 142 extends along the boundary portion between the first exposed region 140 and the bushing inner wall surface 128.

  Similarly, the second conductor flange 132 includes a second joint region 144 in contact with the bushing 126 on one side (outside) with the second triple point region 136 as a boundary. The second conductor flange 132 includes a second exposed region 146 exposed in the internal space 118 on the opposite side (inner side) from the second joint region 144 with the second triple point region 136 as a boundary. The second conductor flange 132 includes a second boundary zone 148 between the second joint region 144 and the second exposed region 146. The second boundary zone 148 extends along a boundary portion between the second exposed region 146 and the bushing inner wall surface 128.

  A triple point is also formed on the atmosphere side. The first conductor flange 130 (or the second conductor flange 132) includes an exposed area to the external space 119. In addition, the first conductor flange 130 (or the second conductor flange 132) includes another boundary zone between the area exposed to the external space 119 and the first bonding area 138 (or the second bonding area 144). Between the boundary zone and the bushing outer wall surface 129, a boundary line between the conductor, the insulator, and the atmospheric space is formed.

  FIG. 2B is a diagram schematically showing an insulating structure of a high voltage electrode according to an embodiment of the present invention. FIG. 2B is a diagram schematically showing a positional relationship between the first conductor flange 130, the second conductor flange 132, the bushing 126, and the conductor element 150, and other components (for example, for example) Illustration of the ion source 112 and the like is omitted. FIG. 3A is a cross-sectional view schematically showing an insulating structure of a high voltage electrode formed in the first triple point region 134 according to an embodiment of the present invention, and FIG. It is a top view which shows roughly the insulation structure of the high voltage electrode which concerns on one embodiment of this invention.

  As will be described in detail later, in this high voltage electrode insulation structure, a heat-resistant portion adjacent to the bushing inner wall surface 128 is formed in the first conductor flange 130. The heat-resistant portion is provided along the edge of the joint region between the bushing 126 and the first conductor flange 130. The heat-resistant part is a conductive region having heat resistance.

  As shown in FIGS. 2 (b) and 3 (a), the first conductor flange 130 includes a conductor element 150. The first conductor flange 130 is a conductor body that supports the conductor element 150 on the surface thereof. The conductor element 150 is an additional annular member that is separate from the first conductor flange 130. Since the conductor element 150 is supported by the first conductor flange 130, the conductor element 150 has the same potential as the first conductor flange 130.

  The conductor element 150 is disposed on the first boundary zone 142 so as to be adjacent to the first joining region 138 and adjacent to the bushing inner wall surface 128. Conductive element 150 is also adjacent to first exposed region 140. The first boundary zone 142 is a part of the surface of the first conductor flange 130 covered by the conductor element 150. In the figure, the inner wall surface 128 of the bushing is located above the conductor element 150, the first joint region 138 is adjacent to the left side of the conductor element 150, and the first exposed region 140 is adjacent to the right side of the conductor element 150. The conductor element 150 is provided along a boundary portion between the first exposed region 140 and the bushing inner wall surface 128.

  FIG. 3B shows an end face of the bushing 126 in contact with the first conductor flange 130. This end face is an electrode bonding surface of the bushing 126 that connects the bushing 126 to the first conductor flange 130. A portion corresponding to the conductor element 150 is indicated by a broken line in FIG. As shown in the figure, the conductor element 150 is provided along the entire circumference of the bushing inner wall surface 128.

  The entire conductor element 150 is accommodated in the recess 152 of the first conductor flange 130. The recess 152 is formed in the first conductor flange 130 and is between the first boundary zone 142 and the facing portion 154. The facing portion 154 is a portion of the bushing 126 that faces the first boundary zone 142.

  A part (for example, half) of the upper surface 156 of the conductor element 150 is exposed to the inner space 118 with the inner wall surface 128 of the bushing as a boundary. To form a triple point on the conductor element 150, in practice, the width of the portion of the top surface 156 exposed in the interior space 118 may be, for example, within about 5 mm to about 10 mm, or greater. Another portion (eg, the other half) of the top surface 156 is covered by the opposing portion 154 of the bushing 126. Similarly, the width of the other portion of the top surface 156 covered by the opposing portion 154 may be, for example, within about 5 mm to about 10 mm, or greater. The facing portion 154 is not exposed to the internal space 118.

  Further, the depth of the recess 152 is substantially equal to the thickness D of the conductor element 150. Therefore, the upper surface 156 of the conductor element 150 adjacent to the bushing inner wall surface 128 forms a plane that is substantially the same as the first joint region 138 (and the first exposed region 140) of the first conductor flange 130.

  The thickness D of the conductor element 150 (or the depth of the recess 152) is determined such that the upper surface 156 is positioned slightly below the first bonding region 138 (and the first exposed region 140) (eg, about a dimensional tolerance). It may be done. The height difference between the top surface 156 and the first bonding region 138 (and the first exposed region 140) may be within about 1 mm, or within about 0.5 mm. In this case, a gap is formed between the upper surface 156 of the conductor element 150 and the bushing inner wall surface 128. This gap helps to avoid interference between the conductor element 150 and the bushing 126.

  Conversely, the thickness D of the conductor element 150 (or the depth of the recess 152) is determined such that the upper surface 156 is positioned slightly above the first bonding region 138 (and the first exposed region 140). Also good. In this case, the conductor element 150 is flexible and / or flexible so that the upper surface 156 of the conductor element 150 is pressed against the opposing portion 154 of the bushing 126 so that the upper surface 156 and the first joining region 138 form substantially the same plane. Or you may have elasticity.

  The conductor element 150 is formed of a material different from that of the first conductor flange 130, specifically, a conductive material having a melting point higher than that of the first conductor flange 130. The entirety of the conductor element 150 forms a heat resistant part. This conductive material has, for example, a lower conductivity than the first conductor flange 130.

  The conductor element 150 is, for example, a graphite plate or sheet. Use of a graphite plate or a graphite sheet as the conductor element 150 is advantageous in terms of cost and ease of handling.

  Actually, the first bonding region 138 (or the second bonding region 144) and the surface of the bushing 126 (electrode bonding surface) in contact with the first bonding region 138 (or the second bonding region 144) have microscopic irregularities (for example, microprojections). Such unevenness is formed, for example, by machining for manufacturing the bushing 126 and the first conductor flange 130 (or the second conductor flange 132). As a result, a minute gap may be generated between the first bonding region 138 (or the second bonding region 144) and the bushing 126. Residual gas may exist in the minute gap. Further, when a high voltage is applied to the first conductor flange 130 (or the second conductor flange 132), an electric field stronger than the surroundings is generated in the vicinity of the first triple point region 134 (or the second triple point region 136). sell. Electrons can be emitted from the minute protrusions into the minute gaps.

  Due to these factors, the first triple point region 134 (or the second triple point region 136) is more susceptible to initial discharge events such as electron supply and gas ionization than other places. When a material with a low melting point, such as aluminum, is present in the vicinity of the initial event, the vaporization of the material, the ionization of the gas, the electrostatic acceleration of the ions, and the collision of the ions with the peripheral members are synergistic. It can make progress.

  If the inner wall surface 128 of the bushing is in direct contact with the surface of the first conductor flange 130 (for example, the first exposed region 140), a triple point of low melting point conductive material, insulating material, and vacuum is present at the contact portion. As it is formed, early events and even discharges may occur frequently. Alternatively, the initial event may develop into a large discharge.

  If the discharge current is excessive, the voltage of the power source (for example, the power supply device 111) of the first conductor flange 130 (or the second conductor flange 132) may drop instantaneously. Such voltage fluctuations can affect the quality of the ion beam B generated by the ion source device 102. In an extreme case, damage such as carbonization may occur in members around the first triple point region 134 (or the second triple point region 136) due to discharge. In the long term, such damage can grow and, for example, large scale carbonization paths can form on the insulator surface.

  If the conductor element 150 is not provided, the recess 152 is opened to the internal space 118, so that the boundary between the bushing 126, the first conductor flange 130 (or the second conductor flange 132), and the internal space 118 is the first joint. It will be formed at the edge of the region 138 (or the second bonding region 144). Hereinafter, for convenience of explanation, the triple point that will be formed when there is no conductor element 150 in this way may be referred to as an old triple point 158. On the other hand, the triple point formed when the conductor element 150 is provided may be referred to as a new triple point 160.

  According to the present embodiment, the old triple point 158 is covered with the conductor element 150, and the new triple point 160 is formed on the upper surface 156 of the conductor element 150. The new triple point 160 is a boundary between a high melting point conductive material, an insulating material, and a vacuum. Therefore, vaporization of the conductive material at the new triple point 160 is suppressed. Therefore, the frequency of occurrence of discharge can be suppressed. Alternatively, the scale of discharge can be reduced.

  As a result, according to the present embodiment, the fluctuation caused by the high voltage discharge applied to the first conductor flange 130 (or the second conductor flange 132) is suppressed, and the ion beam B generated by the ion source device 102 is suppressed. The quality of the stable. Therefore, the high voltage electrode insulation structure according to the present embodiment contributes to the productivity of the ion implantation apparatus 100.

  In the above-described embodiment, the insulating structure is formed on the first conductor flange 130. This configuration is practically useful when the first conductor flange 130 serves as a cathode with respect to the second conductor flange 132, and therefore the first conductor flange 130 can serve as an electron emission source. However, the high-voltage electrode insulation structure according to the present embodiment may be provided not only on the first conductor flange 130 but also on the second conductor flange 132 (see FIG. 2B). Alternatively, depending on the situation, an insulating structure may be provided only on the second conductor flange 132.

  In the above-described embodiment, the conductor element 150 is a graphite plate or sheet. However, the material of the conductor element 150 may not be pure graphite. The conductor element 150 may be formed of a material containing graphite as a main component (for example, a purity of 80% or more, the same applies hereinafter).

  In addition, the conductor element 150 may be formed of a refractory metal such as tungsten, tantalum, or molybdenum, or a material containing such a refractory metal as a main component. The conductor element 150 may be formed of a material mainly composed of silicon carbide, tantalum carbide, or tungsten carbide. The conductor element 150 may be formed of a material mainly composed of iron or an alloy thereof (for example, pure iron, steel, stainless steel, etc.).

  Note that the conductivity of the material forming the conductor element 150 may be equal to or greater than the conductivity of the first conductor flange 130. A part of the conductor element 150 may be formed of the same material as that of the first conductor flange 130.

  In the above-described embodiment, the entire conductor element 150 is accommodated in the recess 152 of the first conductor flange 130. The recess 152 is formed only in the first conductor flange 130. However, the recess 152 may be formed in both the first conductor flange 130 and the bushing 126.

  As shown in FIG. 4A, the conductor element 150 may be accommodated in a recess 153 including an upper recess 162 and a lower recess 164. The lower recess 164 is formed in the first conductor flange 130, and the upper recess 162 is formed in the bushing 126 so as to face the lower recess 164. In this case, the conductor element 150 has an exposed portion 166 that protrudes from the recess 153 into the internal space 118. Even in this case, similarly to the embodiment shown in FIGS. 3A and 3B, the old triple point 158 is covered with the conductor element 150, and the new triple point 160 is formed on the upper surface 156 of the conductor element 150. be able to.

  When the operation of the ion source device 102 is continued for a long time, the material of the conductor element 150 can be gradually consumed in the vicinity of the new triple point 160. In order to provide the conductor element 150 with a sufficient lifetime, the thickness D of the conductor element 150 at the new triple point 160 is preferably, for example, about 30 μm or more, or 50 μm or more. The thickness D may be in the range of about 0.1 mm to about 5 mm, for example.

  Further, in order to form the new triple point 160 with a high melting point conductive material, the creepage distance (illustrated by the broken arrow E) from the new triple point 160 to the first junction region 138 (that is, the old triple point 158) is: It is preferably about 0.5 mm or more and / or about 5 mm or less (or about 10 mm or less). The creepage distance from the new triple point 160 to the first exposed region 140 (illustrated by the dashed arrow F) is about 0.5 mm or more and / or about 5 mm or less (or about 10 mm or less). preferable.

  Further, instead of the first conductor flange 130 having a recess for receiving the conductor element 150, the conductor element 150 is received in the bushing recess 168 formed in the bushing 126 as shown in FIG. May be. Since the depth H of the bushing recess 168 is smaller than the width G of the conductor element 150, the conductor element 150 has an exposed portion 170 that protrudes from the bushing recess 168 into the internal space 118. Even in this case, similarly to the embodiment shown in FIGS. 3A and 3B, the old triple point 158 is covered with the conductor element 150, and the new triple point 160 is formed on the upper surface 156 of the conductor element 150. be able to.

  The depth H of the bushing recess 168 may be equal to or greater than the width G of the conductor element 150 so that the entire conductor element 150 is accommodated in the bushing recess 168 without the exposed portion 170. In this way, the old triple point 158 can be covered with the conductor element 150, and the new triple point 160 can be formed on the upper surface 156 of the conductor element 150.

  Or the recessed part which accommodates the conductor element 150 does not need to be formed in any of the 1st conductor flange 130 and the bushing 126. As shown in FIG. 5, the conductor element 150 is disposed adjacent to the base 172 of the bushing 126 that contacts the first bonding region 138. In this way, the conductor element 150 can be installed so as to cover the old triple point 158 formed by the existing first conductor flange 130 and the bushing 126. The conductor element 150 is a so-called cover that covers the old triple point 158.

  The conductor element 150 may not be in contact with the base 172 of the bushing 126. To facilitate attachment or removal of the conductor element 150, the gap J between the conductor element 150 and the base 172 of the bushing 126 may be, for example, within about 1 mm, or within about 0.5 mm. Even in this case, the new triple point 160 can be formed in the conductor element 150.

  As shown in FIG. 6, the conductor element 150 may include a plurality of members. For example, the conductor element 150 may include a first conductor member 174 housed in the recess 152 and a second conductor member 176 adjacent to the base 172 of the bushing 126. The second conductor member 176 is disposed on the first conductor member 174 so as to cover the exposed surface of the first conductor member 174.

  The conductor element 150 shown in FIG. 6 is an annular member having an L-shaped cross section as a whole. On the other hand, the conductor element 150 shown in FIGS. 3A, 4A, 4B, and 5 has a rectangular cross section. However, the cross section of the conductor element 150 is not limited to an L shape or a rectangle, and may have any other shape.

  In the above embodiment, as shown in FIG. 3B, the conductor element 150 is provided along the entire circumference of the bushing inner wall surface 128. The conductor element 150 is a member that is continuous in the circumferential direction. However, in some embodiments, the conductor element 150 may be divided into a plurality of sector types along the circumferential direction. In addition, it is preferable that the clearance gap between the conductor elements divided | segmented into plurality is less than 0.5 mm.

  In addition, as shown in FIG. 7, the high-voltage electrode insulation structure according to an embodiment of the present invention may include one or more holding members 178 that hold the conductor element 150. The holding member 178 is disposed on the first conductor flange 130 adjacent to the conductor element 150. The holding member 178 may be provided to structurally support the conductor element 150. The holding member 178 may be provided to facilitate the mounting work of the conductor element 150.

  The holding member 178 is formed of a material different from that of the conductor element 150. Therefore, the holding member 178 has a melting point and / or conductivity different from those of the conductor element 150. The holding member 178 may be formed of the same or other conductive material as the first conductor flange 130. The holding member 178 may be formed of an insulating material.

  The conductor element 150 may be fixed to the holding member 178 so as to form a single part together with the holding member 178. For example, the conductor element 150 may be coupled to the holding member 178 at the atomic level. The conductor element 150 may be a layer or film formed on the surface of the holding member 178. Alternatively, the conductor element 150 may be removable from the holding member 178.

  As shown in FIG. 8, a vacuum sealing member 180 (for example, an O-ring) may be provided between the first bonding region 138 and the portion of the bushing 126 in contact therewith. The vacuum sealing member 180 is provided apart from the conductor element 150 as a member different from the conductor element 150. The vacuum sealing member 180 is accommodated in a groove 182 formed in the first joint region 138 of the first conductor flange 130. The groove 182 may be formed in the bushing 126.

  FIG. 9 shows the end face of the bushing 126 in contact with the first conductor flange 130 as in FIG. As shown in FIG. 9, the conductor element 150 may be formed along a part (for example, a half circumference) of the bushing inner wall surface 128. When discharge is likely to occur at a specific place in the circumferential direction, the conductor element 150 may be disposed at such a place, and the conductor element 150 may not be provided at a place where discharge is relatively difficult to occur. The shape of the conductor element 150 in the circumferential direction is not limited to the illustrated arc shape as long as the creepage distance from other members in contact with the conductor element 150 is sufficient.

  In the above, this invention was demonstrated based on the Example. It will be understood by those skilled in the art that the present invention is not limited to the above-described embodiment, and various design changes are possible, various modifications are possible, and such modifications are within the scope of the present invention. By the way.

  In the above-described embodiment, the surface of the first conductor flange 130 that faces the bushing 126 is formed in a planar shape. For example, in the embodiment shown in FIG. 3A, the first joint region 138 and the first exposed region 140 of the first conductor flange 130 and the upper surface 156 of the conductor element 150 form the same plane. The boundary zone 142 is parallel. However, the relative positional relationship between these parts is not limited to such a specific configuration.

  For example, the first boundary zone 142 may have a step so that a height difference is formed between the first bonding region 138 and the first exposed region 140. In this case, the first exposed region 140 may be positioned above or below the first bonding region 138. Further, the first boundary zone 142 may have a corner so that the first bonding region 138 and the first exposed region 140 intersect. The first exposed region 140 may be inclined upward with respect to the first bonding region 138 or may be inclined downward. For example, the first exposed region 140 may be perpendicular to the first bonding region 138.

  Furthermore, at least one of the first bonding region 138, the first exposed region 140, and the first boundary zone 142 may not be flat, and may have a convex portion or a concave portion, for example. For example, the convex portion of the first exposed region 140 may be a cover or a part thereof for covering the first joint region 138 and / or the first boundary zone 142 with respect to the internal space 118.

  Further, the conductor element 150 may cover at least a part of the first exposed region 140. That is, the surface of the first conductor portion exposed to the internal space 118 may be covered with the conductor element 150. Alternatively, the conductor element 150 may cover at least a part of the first bonding region 138. In this case, the surface of the conductor element 150 may be joined to the bushing 126.

  In the above-described embodiment, the conductor element 150 is a member separate from the first conductor flange 130. However, in an embodiment, the conductor element 150 may be formed integrally with the first conductor flange 130 and a heat-resistant portion that is in close contact with the first conductor flange 130 may be provided.

  In the above-described embodiment, the conductor element 150 is formed of a material having heat resistance. However, other interpretations of the material properties of the conductor element 150 are possible. For example, the conductor element 150 may be formed of a material having a low conductor density. Electrons resulting from sputtering are less likely to be generated by a material having a low conductor density such as graphite. The conductor element 150 may be formed of a material having a high work function. This is because field emission is less likely to occur as the work function increases. Graphite and tungsten have a higher work function than aluminum. Thus, the conductor element 150 may be formed of an electron non-emitting material that is less likely to emit electrons than the first conductor flange 130. Here, the electron non-emitting material means a material that is less likely to emit electrons than the conductor portion in which the conductor element 150 is disposed. Since the emission of electrons to the space in the triple point region can be suppressed, the frequency or scale of discharge can be reduced.

  When the insulating structure of the high voltage electrode according to the embodiment of the present invention is formed on both the first conductor flange 130 and the second conductor flange 132, they may have different structures. Any of the above-described embodiments may be employed for the first conductor flange 130, and any other of the above-described embodiments may be employed for the second conductor flange 132.

  The insulating structure of the high voltage electrode according to the embodiment of the present invention can be applied to any conductor portion or electrode body of the ion source device 102. In addition, the high-voltage electrode insulation structure according to the embodiment of the present invention can be applied to any conductor portion or electrode body of the ion implantation apparatus 100.

  Moreover, the insulation structure of the high voltage electrode which concerns on embodiment of this invention can also be applied to two conductor parts or electrode bodies to which an alternating high voltage is applied. In this case, the conductor element 150 may be provided in each of the two conductor portions or the electrode bodies. For example, the conductor element 150 may be provided between the scanning electrode of the beam scanning device 110 and an insulator that supports the scanning electrode.

  Further, the exposed surface of the insulator may be exposed to the vacuum space or may be exposed to the atmospheric space. Alternatively, the exposed surface of the insulator may be exposed to a fluid space filled with a fluid such as insulating oil. Similarly, the exposed region of the conductor body may be exposed to the vacuum space, may be exposed to the atmospheric space, or may be exposed to the fluid space. Therefore, the triple point may be formed between the conductor portion, the insulator, and the vacuum space, may be formed between the conductor portion, the insulator, and the atmospheric space, or the conductor portion, the insulator, It may be formed between the fluid space. The insulating structure of the high voltage electrode according to this embodiment can be applied to such a triple point.

  Hereinafter, some embodiments of the present invention will be given.

A0. A high voltage electrode insulation structure for an ion implanter comprising:
An insulator with an exposed surface in space;
A conductor section comprising: a junction region in contact with the insulator; an exposed region to the space; and a boundary zone extending along the exposed surface of the insulator between the junction region and the exposed region; With
The conductor portion includes a conductor body including the boundary zone, and at least one conductor element disposed in the conductor body.
The conductor element is provided in at least a part of the boundary zone so as to be adjacent to the exposed surface of the insulator, and is formed of a conductive material having a melting point higher than that of the conductor portion. Electrode insulation structure.

A1. A high voltage electrode insulation structure for an ion implanter comprising:
Two conductor parts that are electrodes;
An insulator interposed between the two conductor parts,
The two conductor portions are each connected to the insulator,
The insulator has a surface exposed to a vacuum space;
Each of the two conductor portions includes a conductor body including a junction region in contact with the insulator, an exposure region to the vacuum space, and a boundary zone between the junction region and the exposure region,
At least one of the two conductor portions includes at least one conductor element disposed on the conductor body,
The conductor element is provided in at least a part of the boundary zone so as to be adjacent to the exposed surface of the insulator, and is formed of a conductive material having a melting point higher than that of the conductor portion. Electrode insulation structure.

  A2. The high-voltage electrode insulation structure according to Embodiment A0 or A1, wherein the conductor element is disposed with a gap between the conductor and the exposed surface of the insulator.

  A3. The insulator includes a facing portion facing the boundary zone, a recess is formed in at least one of the facing portion and the boundary zone, and at least a part of the conductor element is accommodated in the recess. An insulating structure for a high-voltage electrode according to any one of Embodiments A0 to A2.

  A4. The high-voltage electrode insulation structure according to any one of Embodiments A0 to A3, wherein the conductor element is adjacent to a base portion of the insulator in contact with the joining region.

  A5. The insulating structure for a high voltage electrode according to any one of Embodiments A0 to A4, further comprising a holding member that holds the conductor element, wherein the holding member is formed of a material different from that of the conductor element. .

  A6. Insulation of a high voltage electrode according to any of embodiments A0 to A5, wherein the conductor element has a creepage distance of 0.5 mm or more between the exposed surface of the insulator and the joining region Construction.

  A7. The high voltage electrode insulation according to any of embodiments A0 to A6, wherein the conductor element has a creepage distance of 0.5 mm or more between the exposed surface of the insulator and the exposed region. Construction.

  A8. The insulation structure for a high voltage electrode according to any one of Embodiments A0 to A7, wherein the conductor element has a thickness of 30 μm or more between the exposed surface of the insulator and the conductor body.

  A9. The high voltage according to any one of embodiments A0 to A8, wherein the space is a space that is evacuated to a vacuum, and a vacuum sealing member is provided between the bonding region and the insulator. Electrode insulation structure.

  A10. Any of Embodiments A0 to A9, wherein the exposed surface of the insulator is an inner wall surface of the insulator surrounding the space, and the conductor element is formed along the entire circumference of the inner wall surface. The high voltage electrode insulation structure according to claim 1.

  A11. Any of Embodiments A0 to A9, wherein the exposed surface of the insulator is an inner wall surface of the insulator surrounding the space, and the conductor element is formed along a part of the inner wall surface. The high voltage electrode insulation structure according to claim 1.

A12. A first DC voltage is applied to the first conductor portion,
The high voltage electrode according to any one of Embodiments A0 to A11, wherein a second conductor to which a second DC voltage different from the first DC voltage is applied is attached to the insulator. Insulation structure.

  A13. A second conductor portion different from the first conductor portion is attached to the insulator, an AC voltage is applied between the two conductor portions, and the second conductor portion has a second conductor element. The high-voltage electrode insulation structure according to any one of Embodiments A0 to A11, comprising:

  A14. The high-voltage electrode insulation structure according to any one of Embodiments A0 to A13, wherein the conductive material includes graphite.

  A15. The high-voltage electrode insulation structure according to any one of Embodiments A0 to A13, wherein the conductive material includes tungsten, tantalum, or molybdenum.

  A16. The insulating structure for a high-voltage electrode according to any one of Embodiments A0 to A13, wherein the conductive material includes silicon carbide, tantalum carbide, or tungsten carbide.

  A17. The high-voltage electrode insulation structure according to any one of Embodiments A0 to A13, wherein the conductive material includes iron.

  A18. The high-voltage electrode insulation structure according to any one of Embodiments A0 to A17, wherein the conductive element is formed of an electron non-emitting material instead of the conductive material.

  A19. An ion source device comprising the high-voltage electrode insulation structure according to any one of Embodiments A0 to A18.

  A20. An ion implantation apparatus including the high-voltage electrode insulation structure according to any one of Embodiments A0 to A18.

B1. A high voltage electrode insulation structure for an ion implanter comprising:
An insulator with an exposed surface;
A conductor portion provided with a junction region in contact with the insulator and a heat-resistant portion provided along at least a part of the edge of the junction region so as to be adjacent to the exposed surface of the insulator. ,
The high-temperature electrode insulating structure, wherein the heat-resistant portion is disposed with a gap between the exposed surface of the insulator and a conductive material having a melting point higher than that of the conductor portion. .

  B2. The insulating structure for a high-voltage electrode according to embodiment B1, wherein the conductor portion includes the heat-resistant portion and at least one conductor element disposed on the edge portion.

  B3. The insulator includes a facing portion that opposes the edge portion of the joining region, a recess is formed in at least one of the facing portion and the edge portion, and at least a part of the heat-resistant portion is accommodated in the recess The insulation structure for a high-voltage electrode according to Embodiment B1 or B2, characterized in that

  B4. The high-voltage electrode insulation structure according to any one of Embodiments B1 to B3, wherein the heat-resistant portion is adjacent to a base portion of the insulator that is in contact with the bonding region.

  B5. The insulation structure for a high-voltage electrode according to any one of Embodiments B1 to B4, further comprising a holding member that holds the heat-resistant portion, wherein the holding member is formed of a material different from that of the heat-resistant portion. .

  B6. The high-temperature electrode insulation according to any one of embodiments B1 to B5, wherein the heat-resistant portion has a creepage distance of 0.5 mm or more between the exposed surface of the insulator and the bonding region. Construction.

  B7. The high-temperature electrode insulation according to any one of Embodiments B1 to B6, wherein the heat-resistant portion has a creepage distance of 0.5 mm or more between the exposed surface of the insulator and the exposed region. Construction.

  B8. The insulation structure for a high voltage electrode according to any one of Embodiments B1 to B7, wherein the heat-resistant portion has a thickness of 30 μm or more between the exposed surface of the insulator and the conductor body.

  B9. Any of Embodiments B1 to B8, wherein the exposed surface is a surface exposed to a space that is evacuated to a vacuum, and a vacuum sealing member is provided between the bonding region and the insulator. The high voltage electrode insulation structure according to claim 1.

  B10. The exposed surface of the insulator is an inner wall surface of the insulator, and the heat-resistant portion is formed along the entire circumference of the inner wall surface, according to any one of Embodiments B1 to B9. High voltage electrode insulation structure.

  B11. The exposed surface of the insulator is an inner wall surface of the insulator, and the heat-resistant portion is formed along a part of the inner wall surface, according to any one of Embodiments B1 to B9. High voltage electrode insulation structure.

B12. A first DC voltage is applied to the conductor portion,
The high voltage electrode according to any one of Embodiments B1 to B11, wherein a second conductor portion to which a second DC voltage different from the first DC voltage is applied is attached to the insulator. Insulation structure.

  B13. A second conductor portion different from the conductor portion is attached to the insulator, an AC voltage is applied between the two conductor portions, and the second conductor portion includes a second heat-resistant portion. The insulation structure of a high-voltage electrode according to any one of Embodiments B1 to B11, characterized in that

  B14. The high-voltage electrode insulation structure according to any one of Embodiments B1 to B13, wherein the conductive material includes graphite.

  B15. The insulating structure for a high-voltage electrode according to any one of Embodiments B1 to B13, wherein the conductive material includes tungsten, tantalum, or molybdenum.

  B16. The insulating structure of a high voltage electrode according to any one of Embodiments B1 to B13, wherein the conductive material includes silicon carbide, tantalum carbide, or tungsten carbide.

  B17. The high-voltage electrode insulation structure according to any one of Embodiments B1 to B13, wherein the conductive material includes iron.

  B18. The high-voltage electrode insulation structure according to any one of Embodiments B1 to B17, wherein the conductor element is formed of an electron non-emitting material instead of the conductive material.

  B19. An ion source device comprising the high-voltage electrode insulation structure according to any one of Embodiments B1 to B18.

  B20. An ion implantation apparatus including the high-voltage electrode insulation structure according to any one of Embodiments B1 to B18.

C. Arranged so that at least two electrode bodies are joined via an insulator,
A DC or AC voltage with an effective value of 1 kV or more is applied between each electrode body,
In the electrode body structure in which at least a part of the junction between each electrode body and the insulator is in contact with the vacuum, and a boundary line (so-called triple point) between each electrode body, the insulator and the vacuum is formed,
An additional member made of a high melting point material and having conductivity is disposed in the vicinity of the insulator and the electrode body so as to cover the original triple point,
The potential of the additional member is equal to the electrode body;
A vacuum electrode structure, wherein a triple point (a boundary line where an insulator, a conductor and a vacuum are in contact) is formed on the additional member at a portion where the additional member is attached.

  DESCRIPTION OF SYMBOLS 100 Ion implantation apparatus, 102 Ion source apparatus, 112 Ion source, 118 Interior space, 126 Bushing, 128 Bushing inner wall surface, 130 1st conductor flange, 132 2nd conductor flange, 134 1st triple point area | region, 136 2nd triple point Area, 138 first bonding area, 140 first exposed area, 142 first boundary zone, 144 second bonding area, 146 second exposed area, 148 second boundary zone, 150 conductor element, 152 recess, 154 facing part, 156 Upper surface, 158 old triple point, 160 new triple point, 172 base, 178 holding member, 180 vacuum sealing member.

Claims (22)

A high voltage electrode insulation structure for an ion implanter comprising:
Two conductor parts that are electrodes;
An insulator interposed between the two conductor parts,
The two conductor portions are each connected to the insulator,
The insulator has a surface exposed to a vacuum space;
Each of the two conductor portions includes a conductor body including a bonding region in contact with the insulator and an exposed region to the vacuum space,
At least one of the two conductor portions includes at least one conductor element disposed on the conductor body,
The conductor element is disposed so as to be adjacent to the base along the entire circumference or a part of the annular base of the insulator in contact with the joining region, and is formed of a conductive material having a melting point higher than that of the conductor. ,
The high-voltage electrode insulation structure, wherein the conductor element is a detachable member separate from the conductor body.   The high-voltage electrode insulation structure according to claim 1, wherein the conductor element is disposed with a gap between the conductor element and the exposed surface of the insulator.   The high-voltage electrode insulation structure according to claim 1, wherein the conductor element is disposed with a gap between the conductor element and a base portion of the insulator.   4. The high voltage electrode insulation structure according to claim 1, further comprising a holding member that holds the conductor element, wherein the holding member is formed of a material different from that of the conductor element. 5. .   5. The insulating structure for a high voltage electrode according to claim 4, wherein the holding member is disposed on the conductor main body adjacent to the conductor element.   6. The high voltage electrode insulation structure according to claim 4, wherein the conductor element is fixed to the holding member so as to form a single component together with the holding member.   The high voltage electrode insulation structure according to claim 1, wherein a vacuum sealing member is provided between the bonding region and the insulator.   The exposed surface of the insulator is an inner wall surface of the insulator surrounding the vacuum space, and the conductor element is formed along the entire circumference of the inner wall surface. The insulation structure of the high voltage electrode in any one.   8. The exposed surface of the insulator is an inner wall surface of the insulator surrounding the vacuum space, and the conductor element is formed along a part of the inner wall surface. The insulation structure of the high voltage electrode in any one.   The first DC voltage is applied to one of the two conductor portions, and a second DC voltage different from the first DC voltage is applied to the other of the two conductor portions. 10. The high voltage electrode insulation structure according to any one of 9 above.   The high voltage electrode insulation structure according to any one of claims 1 to 9, wherein an AC voltage is applied between the two conductor portions, and each of the two conductor portions includes the conductor element. .   The insulating structure for a high voltage electrode according to claim 1, wherein the conductive material contains graphite.   The insulating structure for a high-voltage electrode according to claim 1, wherein the conductive material includes tungsten, tantalum, or molybdenum.   12. The insulating structure for a high voltage electrode according to claim 1, wherein the conductive material includes silicon carbide, tantalum carbide, or tungsten carbide.   The insulating structure for a high voltage electrode according to claim 1, wherein the conductive material contains iron.   16. The high voltage electrode insulation structure according to claim 1, wherein the conductive element is formed of an electron non-emitting material instead of the conductive material.   An ion source device comprising the high-voltage electrode insulation structure according to claim 1.   An ion implantation apparatus comprising the high-voltage electrode insulation structure according to claim 1. A high voltage electrode insulation structure for an ion implanter comprising:
A conductor that is an electrode;
An insulator interposed between the conductor portion and the other electrode,
The conductor portion and the other electrode are each connected to the insulator,
The insulator example Bei the exposed surface of the vacuum space,
The conductor portion, e Bei a joining region in contact with the insulator, and a heat-resistant portion provided along at least part of the edge portion of the junction region adjacent to the exposed surface of the insulator ,
The heat-resistant portion is disposed so as to be adjacent to the base portion along the entire circumference or a part of the annular base portion of the insulator in contact with the joining region, and is formed of a conductive material having a melting point higher than that of the conductor portion. ,
The insulation structure of a high-voltage electrode, wherein the heat-resistant part is a detachable member that is separate from the main body of the conductor part. A high voltage electrode insulation structure for an ion implanter comprising:
Two conductor parts that are electrodes;
An insulator interposed between the two conductor parts,
The two conductor portions are each connected to the insulator,
The insulator comprises an exposed surface to the atmospheric space;
Each of the two conductor portions includes a conductor body including a bonding region in contact with the insulator and an exposed region to the atmospheric space,
At least one of the two conductor portions includes at least one conductor element disposed on the conductor body,
The conductor element is disposed so as to be adjacent to the base along the entire circumference or a part of the annular base of the insulator in contact with the joining region, and is formed of a conductive material having a melting point higher than that of the conductor. ,
The high-voltage electrode insulation structure, wherein the conductor element is a detachable member separate from the conductor body. A high voltage electrode insulation structure for an ion implanter comprising:
Two conductor parts that are electrodes;
An insulator interposed between the two conductor parts,
The two conductor portions are each connected to the insulator,
The insulator includes a first exposed surface to the vacuum space and a second exposed surface to the atmospheric space,
Each of the two conductor portions includes a conductor body including a bonding region in contact with the insulator, a first exposure region to the vacuum space, and a second exposure region to the atmospheric space,
At least one of the two conductor portions includes at least one conductor element disposed on the conductor body,
The conductor element is disposed so as to be adjacent to the base along the entire circumference or a part of the annular base of the insulator in contact with the joining region, and is formed of a conductive material having a melting point higher than that of the conductor. ,
The high-voltage electrode insulation structure, wherein the conductor element is a detachable member separate from the conductor body. A high voltage electrode insulation structure for an ion implanter comprising:
Two conductor parts that are electrodes;
An insulator interposed between the two conductor parts,
The two conductor portions are each connected to the insulator,
The insulator comprises a surface exposed to a fluid space;
Each of the two conductor portions includes a conductor body including a joining region in contact with the insulator and an exposed region to the fluid space,
At least one of the two conductor portions includes at least one conductor element disposed on the conductor body,
The conductor element is disposed so as to be adjacent to the base along the entire circumference or a part of the annular base of the insulator in contact with the joining region, and is formed of a conductive material having a melting point higher than that of the conductor. ,
The high-voltage electrode insulation structure, wherein the conductor element is a detachable member separate from the conductor body.

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