JP6346058B2 - Photoelectric conversion device - Google Patents

Description

  The present invention relates to a photoelectric conversion device in which a plurality of semiconductor layers are stacked.

  As a photoelectric conversion device used for solar power generation or the like, there is one in which a plurality of semiconductor layers are stacked (for example, see Patent Document 1). Such a photoelectric conversion device has a configuration in which a plurality of photoelectric conversion cells are arranged side by side in a plane. Each photoelectric conversion cell includes a lower electrode such as a metal electrode on a substrate such as glass, a light absorption layer including a metal chalcogenide such as CIGS, and a buffer layer including indium sulfide heterojunction to the light absorption layer. The upper electrode such as a transparent electrode or a metal electrode is laminated in this order. In addition, the plurality of photoelectric conversion cells are electrically connected in series by electrically connecting the upper electrode of one adjacent photoelectric conversion cell and the lower electrode of the other photoelectric conversion cell by a connecting conductor. Yes.

JP 2003-282909 A

  A photoelectric conversion device is always required to improve photoelectric conversion efficiency. In order to increase the photoelectric conversion efficiency of the photoelectric conversion device, it is effective to reduce the recombination of carriers generated by the photoelectric conversion. One object of the present invention is to reduce the recombination of carriers generated by photoelectric conversion and improve the photoelectric conversion efficiency of the photoelectric conversion device.

A photoelectric conversion device according to one embodiment of the present invention includes a substrate, a lower electrode layer provided over the substrate, a light absorption layer having a first conductivity type provided over the lower electrode layer, and the light A buffer layer having a second conductivity type provided on the absorption layer; a plurality of insulating layers provided so as to partially cover an upper surface of the buffer layer; and provided on the buffer layer and the insulating layer. An upper electrode layer, and a current collecting electrode provided on the upper electrode layer and having a plurality of strips extending in one direction and arranged at intervals , the plurality of insulating layers comprising: A plurality of strips extending in a direction crossing the one direction are arranged at intervals .

  ADVANTAGE OF THE INVENTION According to this invention, the recombination of the carrier which arose by photoelectric conversion can be reduced, and the photoelectric conversion efficiency of a photoelectric conversion apparatus can be improved.

It is a perspective view which shows an example of Embodiment of the photoelectric conversion apparatus of 1st Embodiment. It is sectional drawing of the photoelectric conversion apparatus of FIG. It is the top view except the part above the insulating layer of the photoelectric conversion apparatus of FIG. It is a top view except the part above the insulating layer of the photoelectric conversion apparatus of 2nd Embodiment. It is a top view except the part above the insulating layer of the photoelectric conversion apparatus of 3rd Embodiment. It is a top view except the part above the insulating layer of the photoelectric conversion apparatus of 4th Embodiment.

  Hereinafter, the present invention will be described in detail with reference to the drawings.

<Photoelectric Conversion Device of First Embodiment>
FIG. 1 is a perspective view showing a photoelectric conversion device according to the first embodiment of the present invention, and FIG. 2 is a sectional view thereof. FIG. 3 is a plan view excluding a portion above the insulating layer of the photoelectric conversion device in order to make the configuration of the buffer layer and the insulating layer easy to see. In the photoelectric conversion device 11, a plurality of photoelectric conversion cells 10 are arranged on the substrate 1 and are electrically connected to each other. In FIG. 1, only two photoelectric conversion cells 10 are shown for convenience of illustration. However, in an actual photoelectric conversion device 11, a large number of photoelectric conversion cells are arranged in the horizontal direction of the drawing or in a direction perpendicular thereto. The cells 10 may be arranged in a plane (two-dimensionally).

  1 and 2, a plurality of lower electrode layers 2 are arranged in a plane on a substrate 1. 1 and 2, the plurality of lower electrode layers 2 include lower electrode layers 2 a to 2 c that are arranged at intervals in one direction. A light absorption layer 3, a buffer layer 4, an insulating layer 6, and an upper electrode layer 5 are sequentially stacked from the lower electrode layer 2a through the substrate 1 to the lower electrode layer 2b. Furthermore, on the lower electrode layer 2b, the connection conductor 7 is provided along or through the side surfaces of the light absorption layer 3 and the buffer layer 4. The connection conductor 7 electrically connects the upper electrode layer 5 and the lower electrode layer 2b. The lower electrode layer 2, the light absorption layer 3, the buffer layer 4, the insulating layer 6, and the upper electrode layer 5 constitute one photoelectric conversion cell 10, and adjacent photoelectric conversion cells 10 are connected in series via the connection conductor 7. By being connected, the high-power photoelectric conversion device 11 is obtained. In addition, although the photoelectric conversion apparatus 11 in this embodiment assumes what light injects into the light absorption layer 3 from the upper electrode layer 5 side, it is not limited to this, Light absorption from the lower electrode layer 2 side The light may be incident on the layer 3.

  The substrate 1 is for supporting the photoelectric conversion cell 10. Examples of the material used for the substrate 1 include glass, ceramics, resin, and metal. As the substrate 1, for example, blue plate glass (soda lime glass) having a thickness of about 1 to 3 mm can be used.

  The lower electrode layer 2 (lower electrode layers 2a, 2b and 2c) is a conductor such as Mo, Al, Ti or Au provided on the substrate 1. The lower electrode layer 2 is formed to a thickness of about 0.2 μm to 1 μm using a known thin film forming method such as sputtering or vapor deposition.

  The light absorption layer 3 is a semiconductor layer that functions to absorb light and generate carriers (electrons and holes). The light absorption layer 3 has a thickness of about 1 μm to 3 μm, for example, and has a first conductivity type (here, a p-type example is shown). Examples of the first semiconductor layer 3 include compound semiconductors such as II-VI group compounds, I-III-VI group compounds, and I-II-IV-VI group compounds.

  The II-VI group compound is a compound semiconductor of a group 12 element (also referred to as II-B group element) and a group 16 element (also referred to as VI-B group element). Examples of II-VI group compounds include CdTe.

The I-III-VI group compound is a compound of a group 11 element (also referred to as a group IB element), a group 13 element (also referred to as a group III-B element), and a group 16 element. Examples of the I-III-VI group compound include CuInSe ₂ (also referred to as copper indium selenide, CIS), Cu (In, Ga) Se ₂ (also referred to as copper indium selenide / gallium, CIGS), Cu ( In, Ga) (Se, S) ₂ (also referred to as diselene / copper indium / gallium / CIGSS). Alternatively, the light absorption layer 3 may be composed of a multi-component compound semiconductor thin film such as copper indium selenide / gallium having a thin film of selenite / copper indium sulfide / gallium as a surface layer.

The I-II-IV-VI group compound is a compound of a group 11 element, a group 12 element, a group 14 element (also referred to as a group IV-B element) and a group 16 element. Examples of the I-II-IV-VI group compound include Cu ₂ ZnSnS ₄ (also referred to as CZTS), Cu ₂ ZnSn (S, Se) ₄ (also referred to as CZTSSe), and Cu ₂ ZnSnSe ₄ (also referred to as CZTSe). Can be mentioned.

  The light absorption layer 3 can be formed by a so-called vacuum process such as a sputtering method or a vapor deposition method, or can be formed by a process called a coating method or a printing method. A process referred to as a coating method or a printing method is a process in which a complex solution of constituent elements of the light absorption layer 3 is applied on the lower electrode layer 2 and then dried and heat-treated.

The buffer layer 4 is a semiconductor layer having a second conductivity type different from the first conductivity type (here, an n-type example is shown) heterojunction to the light absorption layer 3 and having a thickness of 5 to 200 nm. have. As the buffer layer 4, for example, a metal sulfide such as CdS, ZnS, In ₂ S ₃ is used. The buffer layer 4 may be a mixed crystal containing at least one of a metal oxide and a metal hydroxide in addition to such a metal sulfide. The buffer layer 4 is formed by, for example, a solution deposition method (CBD method), an ALD method, an MOCVD method, or the like.

  As shown in FIG. 3, the insulating layer 6 is provided on the buffer layer 4 and partially covers the upper surface of the buffer layer 4. In the example of FIG. 3, the insulating layers 6 are scattered on the buffer layer 4. With such a configuration, the insulating layer 6 functions as a passivation film and generates an electric field effect due to band bending, so that recombination of carriers can be reduced due to minority carrier repulsion at the interface. Alternatively, in the portion where the buffer layer 4 is covered with the insulating layer 6, since the buffer layer 4 and the upper electrode layer 5 are not joined, one carrier moving in the upper structure 5 and minority carriers existing on the surface of the buffer layer 4 Can be reduced. In the portion of the buffer layer 4 that is not covered with the insulating layer 6, the upper electrode layer 5 and the buffer layer 4 are electrically joined, so that carriers generated by photoelectric conversion can be favorably taken out. As a result, the photoelectric conversion efficiency of the photoelectric conversion device 11 can be improved.

The insulating layer 6 may have an electrical resistivity of 1 Ω · m or more. Examples of such an insulating layer 6 include metal oxides such as Al ₂ O ₃ , SiO ₂ , ZrO ₂ and TiO ₂ . Further, from the viewpoint of forming the upper electrode layer 5 well in the non-formed portion of the insulating layer 6 and improving the electrical connection between the upper electrode layer 5 and the buffer layer 4, the thickness of the insulating layer 6 is 15 What is necessary is just about -200 nm.

  The coverage area ratio of the insulating layer 6 per unit area on the upper surface of the buffer layer 4 may be 10% or more and 75% or less. Within such a range, the passivation function by the insulating layer 6 and the extraction of the carrier can be satisfactorily performed.

  The insulating layer 6 can be produced by using a film forming method such as a vapor deposition method, a sputtering method, a sol-gel method, a screen printing method, a coating method, a plating method, or a spray coating method. If necessary, the insulating layer 6 can be formed into a desired pattern shape by combining a photolithography method, a lift-off method, a coating method using a dispenser, and a pattern forming method such as laser scribing. Further, after the insulating layer 6 is formed, a step of promoting crystallization such as annealing or removing foreign matter can be added. In this case, the processing is performed in an atmosphere that does not deteriorate the characteristics affecting the lower electrode 2, the light absorption layer 3, and the buffer layer 4, or the processing is performed in an atmosphere for the purpose of resistance control of the light absorption layer 3 and hydrogen termination. You can also.

  The insulating layer 6 may be changed in quantity, size, etc. depending on the location. By doing in this way, the effect of suppressing recombination is further increased corresponding to the composition of the light absorption layer 3 and film thickness unevenness, or the conversion efficiency of the photoelectric conversion device 21 is increased by reducing the resistance component as much as possible. Can do.

  The upper electrode layer 5 is a semiconductor layer having the same second conductivity type as the buffer layer 4 and is a conductive film having a thickness of about 0.05 to 3.0 μm. The upper electrode layer 5 is for taking out charges generated in the light absorption layer 3 satisfactorily. For example, the electric resistivity of the upper electrode layer 5 is 1 Ω · cm or less, and the sheet resistance is 50 Ω / □ or less. There may be.

The upper electrode layer 5 includes a metal oxide such as ZnO, In ₂ O ₃ , or SnO ₂ , and any one of Al, B, Ga, In, Sn, F, and the like is used to reduce the electrical resistivity. Elements may be included. Specific examples of the metal oxide semiconductor containing such an element include, for example, AZO (Aluminum Zinc Oxide), BZO (Boron Zinc Oxide), GZO (Gallium Zinc Oxide), IZO (Indium Zinc Oxide), ITO ( Indium Tin Oxide) and FTO (Fluorine tin Oxide). The upper electrode layer 5 is formed by sputtering, vapor deposition, CVD, or the like.

Further, the upper electrode layer 5 may be formed of two or more layers having different electrical resistivity, including metal oxides such as ZnO, In ₂ O ₃ , and SnO ₂ . By doing so, it is possible to increase the resistance on the buffer layer 4 side of the upper electrode layer 5 and to provide a function of suppressing leakage.

  Further, as shown in FIGS. 1 and 2, a collecting electrode 8 may be further formed on the upper electrode layer 5. The collecting electrode 8 is for taking out the electric charge generated in the light absorption layer 3 more satisfactorily. For example, as shown in FIG. 1, the collector electrode 8 is formed in a linear shape from one end of the photoelectric conversion cell 10 to the connection conductor 7. As a result, the current generated in the light absorption layer 3 is collected to the current collecting electrode 8 via the upper electrode layer 5, and the adjacent photoelectric conversion cell 10 is successfully energized via the connection conductor 7.

  The collector electrode 8 may have a width of 50 to 400 μm from the viewpoint of increasing the light transmittance to the light absorption layer 3 and having good conductivity. The current collecting electrode 8 may have a plurality of branched portions.

  The collector electrode 8 is formed, for example, by printing a metal paste in which a metal powder such as Ag is dispersed in a resin binder or the like in a pattern and curing it.

  1 and 2, the connection conductor 7 is a conductor provided in a groove that divides the light absorption layer 3, the buffer layer 4, and the upper electrode layer 5. The connection conductor 7 can be made of metal, conductive paste, or the like. In FIG. 1 and FIG. 2, the collector electrode 8 is extended to form the connection conductor 7, but the present invention is not limited to this. For example, the upper electrode layer 5 may be stretched.

  The present invention is not limited to the above-described embodiment, and various changes and improvements can be made without departing from the scope of the present invention. Various modifications are shown below.

<Photoelectric Conversion Device of Second Embodiment>
FIG. 4 is a plan view of the photoelectric conversion device 21 according to the second embodiment except for a portion (an upper electrode layer and a collecting electrode) above the insulating layer 26. 4, the same components as those in FIGS. 1 to 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 4, the photoelectric conversion device 21 of the second embodiment is different from that of the first embodiment in that the insulating layer 26 has a plurality of through holes that expose the upper surface of the buffer layer 4. It is different from the photoelectric conversion device 11.

Even with such a configuration, similarly to the photoelectric conversion device 11 of the first embodiment, the recombination of carriers generated by photoelectric conversion can be reduced and the photoelectric conversion efficiency can be improved. Furthermore, if it is the structure of the photoelectric conversion apparatus 21 of 2nd Embodiment, the impact at the time of forming the upper electrode layer 5 by sputtering method etc. can be reduced, and a leak current can be reduced more.

  In addition, the number of through holes that expose the upper surface of the buffer layer 4 formed in the insulating layer 26 shown in FIG. By doing in this way, the effect of suppressing recombination is further increased corresponding to the composition of the light absorption layer 3 and film thickness unevenness, or the conversion efficiency of the photoelectric conversion device 21 is increased by reducing the resistance component as much as possible. Can do.

<Photoelectric Conversion Device of Third Embodiment>
FIG. 5 is a plan view of the photoelectric conversion device 31 according to the third embodiment excluding a portion (an upper electrode layer and a collecting electrode) above the insulating layer 36. 5, the same components as those in FIGS. 1 to 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 5, the photoelectric conversion device 31 according to the third embodiment includes the photoelectric conversion device 11 according to the first embodiment in that the insulating layer 36 includes a plurality of strips extending in the X-axis direction at intervals. Is different.

  Even with such a configuration, similarly to the photoelectric conversion device 11 of the first embodiment, the recombination of carriers generated by photoelectric conversion can be reduced and the photoelectric conversion efficiency can be improved. Furthermore, in the configuration of the photoelectric conversion device 31 according to the third embodiment, the portion where the buffer layer 4 and the upper electrode layer 5 are connected without passing through the insulating layer 36 is in the direction in which the current flows. Can be made relatively small to reduce current loss. When the collector electrode 8 is formed, by aligning the collector electrode so as to form the collector electrode 36, loss due to light reflection of the insulating layer can be minimized, and current loss can be reduced. Can be small.

<Photoelectric Conversion Device of Fourth Embodiment>
FIG. 6 is a plan view of the photoelectric conversion device 41 according to the fourth embodiment excluding a portion (an upper electrode layer and a collecting electrode) above the insulating layer 46. 6, the same components as those in FIGS. 1 to 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 6, the photoelectric conversion device 41 according to the fourth embodiment includes the photoelectric conversion device 11 according to the first embodiment in that the insulating layer 46 includes a plurality of strips extending in the Y-axis direction at intervals. Is different.

  Even with such a configuration, similarly to the photoelectric conversion device 11 of the first embodiment, the recombination of carriers generated by photoelectric conversion can be reduced and the photoelectric conversion efficiency can be improved. When the film thickness variation and composition variation of the light absorption layer 3 and the buffer layer 4 change in the direction perpendicular to P2 and P3 in the figure, the width of the insulating layer 46 and the buffer layer 4 are changed with such a configuration. By changing the width to be exposed, the effect of suppressing recombination can be partially increased, the resistance component can be reduced, and the conversion efficiency of the photoelectric conversion device 41 can be increased.

2, 2a, 2b, 2c: Lower electrode layer 3: Light absorption layer 4: Buffer layer 5: Upper electrode layer 6, 26, 36, 46: Insulating layer 11, 21, 31, 41: Photoelectric conversion device

Claims (4)

A substrate,
A lower electrode layer provided on the substrate;
A light absorption layer having a first conductivity type provided on the lower electrode layer;
A buffer layer having a second conductivity type provided on the light absorption layer;
A plurality of insulating layers provided to partially cover the upper surface of the buffer layer;
An upper electrode layer provided on the buffer layer and the insulating layer;
A current collecting electrode provided on the upper electrode layer, wherein a plurality of strips extending in one direction are arranged at intervals;
The plurality of insulating layers is a photoelectric conversion device in which a plurality of strips extending in a direction intersecting the one direction are arranged at intervals .   The photoelectric conversion device according to claim 1, wherein an electrical resistivity of the insulating layer is 1 Ω · m or more.   3. The photoelectric conversion device according to claim 1, wherein a covering area ratio of the insulating layer per unit area on the upper surface of the buffer layer is 10% or more and 75% or less. The photoelectric conversion device according to claim 1, wherein the insulating layer includes at least one of Al ₂ O ₃ , SiO ₂ , ZrO _2, and TiO ₂ .

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