JP6308489B2 - Measuring device, measuring method, program, recording medium - Google Patents

Description

  The present invention relates to measuring conditions in a chamber that generates plasma.

  Conventionally, an automatic impedance matching device is known (for example, see FIG. 1 of Patent Document 1, FIG. 1 of Patent Document 2, and FIG. 1 of Patent Document 3). These automatic impedance matching devices are assumed to be connected to a plasma chamber that generates plasma, but the signals used are not high frequency power but electrode voltage and current.

JP 2004-85446 A JP 2006-166212 A JP-A-4-368799

  An object of the present invention is to measure the state of a chamber that generates plasma.

  A measuring apparatus according to the present invention includes a plasma process including a plasma chamber in which plasma is generated, a power source that applies a traveling wave to an electrode in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber. A measuring device for measuring the device, a plurality of mixers for outputting a signal having a frequency equal to the difference between the frequencies of two inputs, a single local signal source for providing a common local signal input to the plurality of mixers; An error measuring unit for measuring a level difference and a phase difference between outputs of the plurality of mixers when a common correction signal input is given to the plurality of mixers; a circuit constant in the impedance matching unit; and the plurality of mixers From the outputs of the plurality of mixers when the measured signal input having a common frequency is given to An impedance derivation unit for deriving an impedance in the plasma chamber; and an error correction unit for correcting a derivation result of the impedance derivation unit based on a measurement result of the error measurement unit, wherein the traveling wave and the traveling wave are The reflected wave reflected by the plasma chamber is configured as the signal under measurement input.

  A plasma chamber in which plasma is generated by the measuring apparatus configured as described above, a power source that applies a traveling wave to the electrodes in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber The plasma processing apparatus is measured. The plurality of mixers outputs a signal having a frequency equal to the difference between the frequencies of the two inputs. A single local signal source provides a common local signal input to the plurality of mixers. The error measuring unit measures a level difference and a phase difference between outputs of the plurality of mixers when a common correction signal input is given to the plurality of mixers. The impedance deriving unit derives the impedance in the plasma chamber from the circuit constants in the impedance matching unit and the outputs of the plurality of mixers when the measured signal inputs having the same frequency are given to the plurality of mixers. . The error correction unit corrects the derivation result of the impedance derivation unit based on the measurement result of the error measurement unit. The traveling wave and the reflected wave obtained by reflecting the traveling wave by the plasma chamber are used as the signal to be measured.

  Note that the measurement apparatus according to the present invention may acquire the traveling wave and the reflected wave from between the power source and the impedance matching unit.

  The measurement apparatus according to the present invention may include an in-chamber state determination unit that determines a state in the plasma chamber based on a result derived by the impedance deriving unit.

  In the measurement apparatus according to the present invention, the in-chamber state determination unit may determine whether there is an abnormality in one plasma process in the plasma processing apparatus.

  In the measuring apparatus according to the present invention, the in-chamber state determination unit may determine whether there is an abnormal plasma process in a plurality of plasma processes in the plasma processing apparatus.

  In the measuring apparatus according to the present invention, the error measurement unit measures the level difference and the phase difference in association with the frequency of the local signal input, and the error correction unit measures the frequency of the local signal input. Correction may be performed according to the above.

  In the measurement apparatus according to the present invention, the error correction unit may perform correction based on the result of interpolation of the measurement result of the error measurement unit with respect to the frequency of the local signal input.

  The measuring apparatus according to the present invention is provided with the local signal input and the intermediate frequency signal input, and outputs a signal having a frequency equal to the sum of the frequencies of the local signal input and the intermediate frequency signal input as the correction signal. A signal mixer may be provided.

  A measuring apparatus according to the present invention includes a plasma process including a plasma chamber in which plasma is generated, a power source that applies a traveling wave to an electrode in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber. A measuring device for measuring the device, a plurality of mixers for outputting a signal having a frequency equal to the difference between the frequencies of two inputs, a single local signal source for providing a common local signal input to the plurality of mixers; An impedance deriving unit for deriving an impedance in the plasma chamber from a circuit constant in the impedance matching unit and an output of the plurality of mixers when a measured signal input having a common frequency is given to the plurality of mixers; When a common signal input is given to the plurality of mixers, Serial level difference and the phase difference between the outputs of the plurality of mixers without said traveling wave, configured such that the traveling wave and the measured signal input and a reflected wave reflected by the plasma chamber.

  A plasma chamber in which plasma is generated by the measuring apparatus configured as described above, a power source that applies a traveling wave to the electrodes in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber The plasma processing apparatus is measured. The plurality of mixers outputs a signal having a frequency equal to the difference between the frequencies of the two inputs. A single local signal source provides a common local signal input to the plurality of mixers. The impedance deriving unit derives the impedance in the plasma chamber from the circuit constants in the impedance matching unit and the outputs of the plurality of mixers when the measured signal inputs having the same frequency are given to the plurality of mixers. . There is no level difference or phase difference between the outputs of the plurality of mixers when a common signal input is given to the plurality of mixers. The traveling wave and the reflected wave obtained by reflecting the traveling wave by the plasma chamber are used as the signal to be measured.

  The present invention measures a plasma processing apparatus having a plasma chamber in which plasma is generated, a power source that applies a traveling wave to electrodes in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber. A measurement apparatus, comprising: a plurality of mixers that output a signal having a frequency equal to a difference between frequencies of two inputs; and a single local signal source that provides a common local signal input to the plurality of mixers. An error measuring step of measuring a level difference and a phase difference between outputs of the plurality of mixers when a common correction signal input is given to the plurality of mixers, and the impedance matching The circuit constants in the unit and the measured signal input with the same frequency were given to the plurality of mixers. An impedance derivation step for deriving an impedance in the plasma chamber from outputs of the plurality of mixers, and an error correction step for correcting the derivation result of the impedance derivation step based on the measurement result of the error measurement step. A measuring method using the traveling wave and the reflected wave reflected by the plasma chamber as the measured signal input.

  The present invention measures a plasma processing apparatus having a plasma chamber in which plasma is generated, a power source that applies a traveling wave to electrodes in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber. A measurement apparatus, comprising: a plurality of mixers that output a signal having a frequency equal to a difference between frequencies of two inputs; and a single local signal source that provides a common local signal input to the plurality of mixers. A program for causing a computer to execute measurement processing, wherein the measurement processing measures a level difference and a phase difference between outputs of the plurality of mixers when a common correction signal input is given to the plurality of mixers. Error measurement step, circuit constants in the impedance matching unit, and the plurality of mixers. An impedance derivation step for deriving an impedance in the plasma chamber from outputs of the plurality of mixers when a signal input to be measured having a common frequency is supplied to the signal, and the impedance based on the measurement result of the error measurement step An error correction step for correcting a derivation result of the derivation step, wherein the traveling wave and a reflected wave reflected by the plasma chamber are input to the signal to be measured.

  The present invention measures a plasma processing apparatus having a plasma chamber in which plasma is generated, a power source that applies a traveling wave to electrodes in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber. A measurement apparatus, comprising: a plurality of mixers that output a signal having a frequency equal to a difference between frequencies of two inputs; and a single local signal source that provides a common local signal input to the plurality of mixers. A computer-readable recording medium storing a program for causing a computer to execute measurement processing, wherein the measurement processing is performed when a plurality of mixers receive a common correction signal input. An error measuring step for measuring a level difference and a phase difference between outputs; An impedance deriving step for deriving an impedance in the plasma chamber from circuit constants in a dance matching unit and outputs of the plurality of mixers when a signal input to be measured having a common frequency is applied to the plurality of mixers; An error correction step of correcting the derivation result of the impedance derivation step based on the measurement result of the error measurement step, the traveling wave and the reflected wave reflected by the plasma chamber being the signal under measurement It is a recording medium to be input.

It is a functional block diagram which shows the structure of the measuring apparatus 1 concerning embodiment of this invention. It is a functional block diagram which shows a structure when a correction signal is given to the measuring apparatus 1 concerning embodiment of this invention. It is a figure which shows an example of the measurement of the level difference between the outputs of the several mixers 14 and 24 when a common correction signal input is given to the several mixers 14 and 24. FIG. Output level differences ΔLv1 to _ΔLv3 interpolated with respect to the frequency f _Lo1 of the local signal input when a common correction signal input is given to the plurality of mixers 14 and 24 (see FIG. 4A) and output phase difference It is a figure which shows what interpolated ( _{DELTA) P1-} ( _{DELTA) P3} about local signal input frequency _fLo1 (refer _FIG.4 (b)). It is a functional block diagram which shows a structure when a to-be-measured signal is given to the measuring apparatus 1 concerning embodiment of this invention. The figure (refer FIG. 6 (a)) which shows the structure of what connected the measuring apparatus 1 concerning embodiment of this invention to the plasma processing apparatus, and the equivalent circuit schematic (refer FIG.6 (b)) of the matcher 5 and the plasma chamber 6 It is. In one plasma process, is a diagram illustrating a case where the plasma chamber 6 becomes abnormal state after the normal state, the correspondence between the real part R _P or imaginary part X _P and time of the load impedance Z _L . In multiple plasma process, it shows a correspondence between the real part R _P or imaginary part X _P of the load impedance Z _L plasma chamber 6 in the plasma process in a normal state time (see FIG. 8 (a)), plasma chamber 6 is a diagram showing the correspondence between the load impedance Z _L real part R _P or imaginary part X _P and time in the plasma process in an abnormal state (see Figure 8 (b)).

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 is a functional block diagram showing a configuration of a measuring apparatus 1 according to an embodiment of the present invention. The measuring device 1 includes a first terminal 11, a second terminal 21, an output terminal 31, a first local signal source 12, a first mixer 14, a first A / D converter 16, a first level / phase measuring unit 18, a first Two local signal source 22, second mixer 24, second A / D converter 26, second level / phase measuring unit 28, intermediate frequency signal source 32, correction signal mixer 34, switches 42 and 44, local frequency setting unit 52, an error measurement unit 54, an error correction unit 56, an impedance derivation unit 60, and an in-chamber state determination unit 70. The measuring apparatus 1 is a spectrum analyzer, for example.

  FIG. 2 is a functional block diagram showing a configuration when a correction signal is given to the measuring apparatus 1 according to the embodiment of the present invention. FIG. 5 is a functional block diagram showing a configuration when a signal under measurement is given to the measuring apparatus 1 according to the embodiment of the present invention.

  Referring to FIG. 2, distributor 4 provides a correction signal to first terminal 11 and second terminal 21. The distributor 4 may be built in the measuring device 1. Referring to FIG. 5, traveling wave and reflected wave (measurement signal input) are applied to first terminal 11 and second terminal 21, respectively.

  FIG. 6 is a diagram (see FIG. 6A) showing the configuration of the measuring apparatus 1 according to the embodiment of the present invention connected to a plasma processing apparatus, and an equivalent circuit diagram of the matcher 5 and the plasma chamber 6 (FIG. 6 ( b)).

  Referring to FIG. 6A, the plasma processing apparatus includes a plasma chamber 6, a high frequency power source 2, and a matcher (impedance matching unit) 5. Plasma is generated in the plasma chamber 6. The high frequency power supply 2 gives a traveling wave to the electrode 6 a in the plasma chamber 6. In FIG. 6A, a traveling wave is shown to be applied to the electrode 6a, but a traveling wave may be applied to the electrode 6b instead of the electrode 6a. A matcher (impedance matching unit) 5 performs impedance matching between the high-frequency power source 2 and the plasma chamber 6.

  The directional coupler 3 is disposed between the high frequency power source 2 and the matcher 5. The measuring apparatus 1 is connected to the plasma processing apparatus via the directional coupler 3. The measuring apparatus 1 measures a plasma processing apparatus.

  A traveling wave from the high frequency power source 2 (frequency is 2.4 GHz, for example) is applied to the electrode 6 a in the plasma chamber 6 through the matcher 5. The matcher 5 is for impedance matching between the high-frequency power source 2 side (impedance is about 50Ω) and the plasma chamber 6 side (impedance is different from 50Ω). In the plasma chamber 6, an electrode 6b (grounded) is also arranged. Plasma is generated in the plasma chamber 6. Plasma is generated between the electrodes 6a and 6b. The wafer 7 placed on the electrode 6b is processed by plasma. The process from the start to the end of processing of the wafer 7 by plasma is called one plasma process.

  The measuring apparatus 1 receives a traveling wave and a reflected wave in which the traveling wave is reflected by the plasma chamber 6 from between the high-frequency power source 2 and the matcher 5 via the directional coupler 3. The traveling wave is given to the first terminal 11 of the measuring apparatus 1. The reflected wave is given to the second terminal 21 of the measuring device 1. The traveling wave and the reflected wave become the signal under measurement input. The traveling wave and the reflected wave have the same frequency.

Referring to FIG. 6 (b), the matcher 5 is equivalent to the circuit of the LC element, the plasma chamber 6 is equivalent to the elements of the impedance Z _L. In the equivalent circuit of the matcher 5 and the plasma chamber 6, and that the plasma chamber 6 capacitance C2 on the side viewed, inductance L2, elements of the impedance Z _L is connected in series from the capacitance C3, the capacitance C1, and the capacitance C3 Connected in parallel. They are further connected to one end of an inductance L1. Capacitances C1 and C2 are variable, thereby changing the real component (resistance) and imaginary component (reactance) of the impedance of the matcher 5 to obtain impedance matching.

  The first terminal (CH1: channel 1) 11 supplies a traveling wave (see FIG. 5) or a correction signal (see FIG. 2) given from the distributor 4 to the first mixer. The second terminal (CH2: channel 2) 21 supplies the reflected wave (see FIG. 5) or the correction signal (see FIG. 2) given from the distributor 4 to the second mixer 24.

  The output terminal 31 outputs a correction signal. The output terminal 31 is connected to the distributor 4 (see FIG. 2).

  The first mixer 14 outputs a signal having a frequency equal to the difference between the frequencies of two inputs (R input and L input) (I output). However, the R input is supplied from the first terminal 11 and the L input is supplied from the first local signal source 12. R input, L input, and I output mean Radio Frequency input, Local input, and Intermediate Frequency output, respectively.

  The second mixer 24 outputs a signal having a frequency equal to the difference between the frequencies of the two inputs (R input and L input) (I output). However, the R input is supplied from the second terminal 21 and the L input is supplied from the first local signal source 12. The meanings of the R input, L input, and I output are the same as those of the first mixer 14.

The first local signal source 12 is a single local signal source that provides a common local signal input to the L inputs of the plurality of mixers 14 and 24 (see FIGS. 2 and 5). Note that the frequency f _{Lo1 of the} local signal is variable, that is, can be swept.

  The first A / D converter 16 receives the I output (analog signal) of the first mixer 14 and converts it into a digital signal. The second A / D converter 26 receives the I output (analog signal) of the second mixer 24 and converts it into a digital signal.

  The first level / phase measurement unit 18 provides the first mixer when a plurality of mixers 14 and 24 are supplied with a signal under measurement (see FIG. 5) having a common frequency or a common correction signal input (see FIG. 2). Measure the level and phase of the 14 outputs. The measurement result of the first mixer 14 is given to the error measurement unit 54 (see FIG. 2) or given to the impedance measurement unit 62 (see FIG. 5).

  The second level / phase measurement unit 28 provides the second mixer when the measured signal input (see FIG. 5) or the common correction signal input (see FIG. 2) having the same frequency is given to the plurality of mixers 14 and 24. Measure the level and phase of the 24 outputs. The measurement result of the second mixer 24 is given to the error measuring unit 54 (see FIG. 2) or given to the impedance measuring unit 62 (see FIG. 5).

  The first level / phase measurement unit 18 and the second level / phase measurement unit 28 are implemented by, for example, a DSP (Digital Signal Processor).

  The second local signal source 22 is a signal source that can be swept (variable in frequency).

  The intermediate frequency signal source 32 provides an intermediate frequency signal input to the correction signal mixer 34. The intermediate frequency signal may be a signal similar to the signal under measurement, or may be a pulse, a continuous wave (frequency may be swept), a modulated signal, or noise.

  The correction signal mixer 34 is supplied with a local signal input (L input) and an intermediate frequency signal input (I input). Further, the correction signal mixer 34 outputs a signal having a frequency equal to the sum of the frequencies of the local signal input and the intermediate frequency signal input as a correction signal (R output). The local signal input (L input) is supplied from the first local signal source 12 via the switch 42. The intermediate frequency signal input (I input) is supplied from the intermediate frequency signal source 32. The correction signal is given to the output terminal 31.

  However, R output, L input, and I input mean Radio Frequency output, Local (local) input, and Intermediate Frequency input (intermediate frequency), respectively.

  The switch 42 is a switch for switching whether the first local signal source 12 is connected to the correction signal mixer 34 (see FIG. 2) or not (see FIG. 5).

  The switch 44 is a switch that connects the second mixer 24 to the single local signal source 12 (see FIGS. 2 and 5) or the second local signal source 22.

The local frequency setting unit 52 sets f _Lo1 that is the frequency of the first local signal source 12.

  The error measurement unit 54 outputs the level and phase of the output of the first mixer 14 from the first level / phase measurement unit 18 when a common correction signal input is given to the plurality of mixers 14 and 24 (see FIG. 2). Then, the level and phase of the output of the second mixer 24 are received from the second level / phase measurement unit 28.

  Further, the error measurement unit 54 is configured to provide a common correction signal input to the plurality of mixers 14 and 24 based on the measurement results received from the first level / phase measurement unit 18 and the second level / phase measurement unit 28. (See FIG. 2), the level difference and phase difference between the outputs of the plurality of mixers 14, 24 are measured.

The error measuring unit 54 calculates the level difference and phase difference between the outputs of the plurality of mixers 14 and 24 when the common correction signal input is given to the plurality of mixers 14 and 24 (see FIG. 2). _Measured in association with frequency f _Lo1 .

  FIG. 3 is a diagram showing an example of the measurement of the level difference and the phase difference between the outputs of the plurality of mixers 14 and 24 when a common correction signal input is given to the plurality of mixers 14 and 24.

The error measurement unit 54 receives from the first level / phase measurement unit 18 the output level of the first mixer 14 (CH1) when the frequency f _Lo1 of the local signal input is f ₁ . In addition, the error measurement unit 54 receives the output level of the second mixer 24 (CH2) from the second level / phase measurement unit 28 when the frequency f _Lo1 of the local signal input is f ₁ . Further, the error measuring unit 54 calculates (ΔLv1) and records the difference (CH2−CH1) between the two output levels. The error measurement unit 54 acquires from the local frequency setting unit 52 that the frequency f _Lo1 of the local signal input is f ₁ . The error measurement unit 54 records ΔLv1 in association with f ₁ .

Similarly, the error measurement section 54 calculates the difference between the output levels of both when the frequency f _Lo1 of the local signal input is _{f 2 (CH2-CH1) (} ΔLv2), is recorded. The error measuring unit 54 acquires from the local frequency setting unit 52 that the frequency f _Lo1 of the local signal input is f ₂ . Error measuring section 54 records the ΔLv2 in association with f _2.

Further, the error measurement section 54 calculates the difference between the output levels of both when the frequency f _Lo1 of the local signal input is _{f 3 (CH2-CH1) (} ΔLv3), is recorded. The error measuring unit 54 acquires from the local frequency setting unit 52 that the frequency f _Lo1 of the local signal input is f ₃ . Error measuring section 54 records the ΔLv3 in association with f _3.

For example, f ₃ −f ₂ = f ₂ −f ₁ and f ₃ > f ₂ > f ₁ .

The error measurement unit 54 receives from the first level / phase measurement unit 18 the output phase of the first mixer 14 (CH1) when the frequency f _Lo1 of the local signal input is f ₁ . Moreover, the error measurement unit 54 receives the output phase of the second mixer 24 (CH2) from the second level / phase measurement unit 28 when the local signal input frequency f _Lo1 is f ₁ . Further, the error measurement unit 54 obtains (ΔP1) and records the difference (CH2−CH1) between the two output phases. The error measurement unit 54 acquires from the local frequency setting unit 52 that the frequency f _Lo1 of the local signal input is f ₁ . The error measurement unit 54 records ΔP1 in association with f ₁ .

Similarly, the error measurement section 54 calculates the difference between the output phase when the frequency f _Lo1 of the local signal input is _{f 2 (CH2-CH1) (} ΔP2), is recorded. The error measuring unit 54 acquires from the local frequency setting unit 52 that the frequency f _Lo1 of the local signal input is f ₂ . Error measuring section 54 records the ΔP2 in association with f _2.

Further, the error measurement section 54 calculates the difference between the output phase when the frequency f _Lo1 of the local signal input is _{f 3 (CH2-CH1) (} ΔP3), is recorded. The error measuring unit 54 acquires from the local frequency setting unit 52 that the frequency f _Lo1 of the local signal input is f ₃ . Error measuring section 54 records the ΔP3 in association with f _3.

The impedance deriving unit 60 generates plasma from the circuit constants in the matcher (impedance matching unit) 5 and the outputs of the plurality of mixers 14 and 24 when the signals to be measured having the same frequency are supplied to the plurality of mixers 14 and 24. The impedance (load impedance Z _L ) in the chamber 6 is derived.

  The impedance deriving unit 60 includes a characteristic impedance measuring unit 62, a matcher characteristic recording unit 64, and a load impedance measuring unit 66.

  The characteristic impedance measurement unit 62 (see FIG. 5) measures the ratio of the outputs of the plurality of mixers 14 and 24 when the signal under measurement having a common frequency is supplied to the plurality of mixers 14 and 24.

  The characteristic impedance measurement unit 62 obtains the measurement result Pf of the output (electric field) of the first mixer 14 (CH1) when the measured signal input having a common frequency is given to the plurality of mixers 14 and 24 (see FIG. 5). The first level / phase measurement unit 18 receives the measurement result Pr of the output (electric field) of the second mixer 24 (CH 2) from the second level / phase measurement unit 28.

Furthermore, the characteristic impedance measuring unit 62 measures and outputs the ratio between the output Pf of the first mixer 14 (CH1) and the output Pr of the second mixer 24 (CH2). The output (having amplitude and phase) of the mixer 14 represents a traveling wave, and the output (having amplitude and phase) of the mixer 24 represents a reflected wave. The characteristic impedance measurement unit 62 calculates (reflected wave) / (traveling wave), which means that the impedance in the matcher 5 and the plasma chamber 6 (referred to as characteristic impedance Z _CIM ) is measured.

  The measurement result of the characteristic impedance measurement unit 62 is corrected by the error correction unit 56. This correction will be described later.

  The matcher characteristic recording unit 64 records the characteristics of the matcher 5. The matcher characteristic recording unit 64 records capacitances C1, C2, C3 and inductances L1, L2, which are circuit constants in the matcher 5, as the characteristics of the matcher 5. Since the capacitances C1 and C2 are variable, the matcher characteristic recording unit 64 receives the changed value from the matcher 5 and records it.

The load impedance measuring unit 66 calculates the impedance (load impedance) in the plasma chamber 6 from the characteristic impedance Z _CIM measured by the characteristic impedance measuring unit 62 and the characteristic (circuit constant) of the matcher 5 recorded in the matcher characteristic recording unit 64. Z _L ) is derived.

The characteristic impedance Z _CIM is considered to be a combination of the load impedance Z _L and the impedance of the matcher 5. Therefore, referring to FIG. 6B, the characteristic impedance Z _CIM is expressed as follows by the load impedance Z _L and the circuit constant of the matcher 5.

特性インピーダンスZ_CIMは、特性インピーダンス測定部６２により測定されており既知である。しかも、キャパシタンスC1、C2、C3、インダクタンスL1、L2は、マッチャー特性記録部６４により記録されており既知である。結局、負荷インピーダンスZ_Lのみが未知である。よって、負荷インピーダンス測定部６６は、上記の式（１）を負荷インピーダンスZ_Lについて解くことで、負荷インピーダンスZ_Lを求めることができる。

The characteristic impedance Z _CIM is measured by the characteristic impedance measuring unit 62 and is known. Moreover, the capacitances C1, C2, C3 and the inductances L1, L2 are recorded by the matcher characteristic recording unit 64 and are known. After all, only the load impedance Z _L is unknown. Therefore, the load impedance measuring unit 66 can obtain the load impedance Z _L by solving the above equation (1) for the load impedance Z _L.

That is, the impedance deriving unit 60 provides the circuit constants in the matcher 5 recorded in the matcher characteristic recording unit 64 and the plurality of mixers 14, 24 when the measured signals having the same frequency are supplied to the plurality of mixers 14, 24. From the outputs Pf and Pr (received by the characteristic impedance measuring unit 62), the load impedance Z _L is derived.

The error correction unit 56 corrects the measurement result of the characteristic impedance measurement unit 62 according to the frequency f _Lo1 of the local signal input based on the measurement result of the error measurement unit 54 (see FIG. 5). Thereby, the derivation result of the impedance derivation unit 60 is corrected.

For example, the error correction unit 56 acquires from the local frequency setting unit 52 that the frequency f _Lo1 of the local signal input is f ₁ . Further, the error correction unit 56 reads out the output level difference ΔLv 1 and the output phase difference ΔP ₁ associated with f ₁ from the error measurement unit 54. The error correction unit 56 corrects the measurement result of the impedance measurement unit 62 by providing ΔLv1 and ΔP1 to the characteristic impedance measurement unit 62. For example, when the impedance measuring unit 62 measures the ratio between the output of the first mixer 14 (CH1) and the output of the second mixer 24 (CH2), the level [dBm] of the output of the second mixer 24 (CH2). And the phase [rad] is reduced by ΔLv1 and ΔP1.

Similar correction is performed when the frequency f _Lo1 of the local signal input is f ₂ or f ₃ .

However, when the frequency f _Lo1 of the local signal input is not any of f ₁ , f ₂ and f ₃ , the measurement result of the impedance measuring unit 62 cannot be corrected by the above method. In such a case, the error correction unit 56 corrects the measurement result of the characteristic impedance measurement unit 62 based on the measurement result of the error measurement unit 54 interpolated with respect to the frequency f _Lo1 of the local signal input.

FIG. 4 shows an output level difference ΔLv1 to _ΔLv3 interpolated with respect to the frequency f _Lo1 of the local signal input when a common correction signal input is given to the plurality of mixers 14 and 24 (see FIG. 4A) and It is a figure which shows what interpolated the difference (DELTA) P1-ΔP3 of output phase about the frequency fLo1 of local signal input (refer _FIG.4 (b)).

  In FIG. 4, the output level and the output phase are interpolated by a linear function as an example. The result obtained by interpolating the output level and the output phase is recorded in the error measurement unit 54.

The error correction unit 56 _acquires the value of the frequency f _Lo1 of the local signal input from the local frequency setting unit 52. The error correction unit 56 obtains the difference between the output level and the output phase corresponding to this value from the interpolation result (see FIGS. 4A and 4B), and gives it to the characteristic impedance measurement unit 62. Thus, the measurement result of the characteristic impedance measurement unit 62 is corrected.

  The chamber internal state determination unit 70 determines the internal state of the plasma chamber 6 based on the result derived by the impedance deriving unit 60.

  The in-chamber state determination unit 70 determines whether there is an abnormality in one plasma process in the plasma processing apparatus. It is also conceivable to control the power or frequency of the high-frequency power source 2 based on the determination result.

7, in one plasma process, in the case where the plasma chamber 6 becomes abnormal state after the normal state, the correspondence between the real part R _P or imaginary part X _P and time of the load impedance Z _L FIG. The abnormal state may be, for example, abnormal discharge or vibration of the wafer 7 due to an improper fixing of the wafer 7.

In one single plasma process, if a normal plasma chamber 6 states (time 0 to t1), the real part R _P or imaginary part X _P of the load impedance Z _L is to approximate a linear function of time Can do. 7, in a normal state, the real part R _P or imaginary part X _P is shown an example of monotonically increasing is also contemplated that a monotonically decreasing or constant.

Here, the plasma chamber 6 becomes an abnormal state (time T1～t0), the real part R _P or imaginary part X _P is not able to approximate a linear function of time. For example, the real part R _P or the imaginary part X _P is fluctuated as compared with the normal state. The in-chamber state determination unit 70 can determine that there is an abnormality in one plasma process by detecting this fluctuation. This volatility may be detected at that you get a real part R _P or imaginary part X _P under normal conditions in a single plasma processing.

For example, chamber state determining section 70, it obtains a real part R _P or imaginary part X _P under normal conditions in a single plasma processing. Further, chamber state determination unit 70 in advance seeking a departure from the real part R _P or imaginary part X _P by threshold ΔP0 vertically in a normal state (shown by dotted lines in FIG. 7), which the real part If _RP or imaginary part _XP is exceeded, it is determined that there is an abnormal condition.

  Further, the chamber internal state determination unit 70 determines the presence or absence of an abnormal plasma process in a plurality of plasma processes in the plasma processing apparatus. It is also conceivable to control the power or frequency of the high-frequency power source 2 based on the determination result.

8, a plurality of times of the plasma process, shows a correspondence between the load impedance Z _L real part R _P or imaginary part X _P and time in the plasma process in the normal state plasma chamber 6 (Fig. 8 (a )) and a diagram showing the correspondence between the real part R _P or imaginary part X _P of the load impedance Z _L plasma chamber 6 in the plasma process in an abnormal state time (FIG. 8 (b) refer). Note that the abnormal state may be, for example, accumulation of unnecessary materials on the wall surface in the plasma chamber 6, contamination of the wall surface in the plasma chamber 6, or a gas density defect in the plasma chamber 6.

Referring to FIG. 8 (a), in normal one plasma process, the real part R _P or imaginary part X _P of the load impedance Z _L can be approximated to a linear function of time. In FIG. 8 (a), the in normal condition, but the real part R _P or imaginary part X _P is shown an example of monotonically increasing is also contemplated that a monotonically decreasing or constant. Usually, the plasma processing apparatus repeats a normal plasma process as shown in FIG. However, eventually, the inside of the plasma chamber 6 becomes abnormal.

Referring to FIG. 8 (b), when the plasma chamber 6 becomes an abnormal state, the real part R _P or imaginary part X _P is not able to approximate a linear function of time. For example, the real part R _P or the imaginary part X _P is fluctuated as compared with the normal state. The in-chamber state determination unit 70 can determine that this is an abnormal plasma process by detecting this fluctuation.

For example, chamber state determining section 70, you obtain a real part R _P or imaginary part X _P in normal one plasma process (see Figure 8 (a)). Further, the in-chamber state determination unit 70 is separated from the real part R _P or the imaginary part X _P (see FIG. 8A) in the normal single plasma process by a threshold value ΔP1 in the vertical direction (FIG. 8 ( In FIG. 5B, the dotted line indicates), and when the real part _RP or the imaginary part _XP is exceeded, it is determined that the plasma process is abnormal.

  Next, the operation of the embodiment of the present invention will be described.

(1) Input of correction signal (see Fig. 2)
First, referring to FIG. 2, a correction signal is given to the measuring apparatus 1.

A switch 42 connects the first local signal source 12 to the L input of the correction signal mixer 34. Here, the local frequency setting unit 52 sets the frequency f _Lo1 of the first local signal source 12. Then, the local signal input (L input) is supplied from the first local signal source 12 to the correction signal mixer 34. In addition, an intermediate frequency signal input (I input) is supplied from the intermediate frequency signal source 32 to the correction signal mixer 34.

  Then, a signal having a frequency equal to the sum of the frequencies of the local signal input and the intermediate frequency signal input is output from the correction signal mixer 34 as a correction signal (R output). The correction signal is output from the output terminal 31 and given to the distributor 4. The distributor 4 gives a correction signal to the first terminal 11 and the second terminal 21.

  Here, the switch 44 connects the second mixer 24 to the single local signal source 12.

  The correction signal given to the first terminal (CH1) 11 is given to the R input of the first mixer 14. A local signal input from the local signal source 12 is given to the L input of the first mixer 14. Then, a signal having a frequency equal to the difference between the frequencies of the two inputs (R input and L input) is output from the first mixer 14 (I output). The frequency of the I output is the frequency of the intermediate frequency signal output from the intermediate frequency signal source 32.

  The I output (analog signal) of the first mixer 14 is converted into a digital signal by the first A / D converter 16 and supplied to the first level / phase measurement unit 18. The first level / phase measurement unit 18 measures the level (power level) and phase of the output of the first mixer 14, and supplies the measured level to the error measurement unit 54.

  The correction signal given to the second terminal (CH2) 21 is given to the R input of the second mixer 24. A local signal input from the local signal source 12 is given to the L input of the second mixer 24. Then, a signal having a frequency equal to the difference between the frequencies of the two inputs (R input and L input) is output from the second mixer 24 (I output). The frequency of the I output is the frequency of the intermediate frequency signal output from the intermediate frequency signal source 32.

  The I output (analog signal) of the second mixer 24 is converted into a digital signal by the second A / D converter 26 and supplied to the second level / phase measurement unit 28. The second level / phase measurement unit 28 measures the level (power level) and phase of the output of the second mixer 24, and gives them to the error measurement unit 54.

The local frequency setting unit 52 gives the error measurement unit 54 the value of the local signal input frequency f _Lo1 .

  Since the same correction signal is given to both the first mixer 14 and the second mixer 24, the output level and output phase, which are the measurement results of the first level / phase measurement unit 18, and the second level / phase measurement unit 28. Ideally, the output level and the output phase, which are measurement results, are equal.

  However, in reality, the same correction signal is given to both the first mixer 14 and the second mixer 24, but the output level and output phase, which are the measurement results of the first level / phase measurement unit 18, The output level and the output phase which are the measurement results of the second level / phase measurement unit 28 are different. Actually, there is a difference between the electrical length and attenuation of the electrical circuit from the local signal source 12 to the first mixer 14 and the electrical length and attenuation of the electrical circuit from the local signal source 12 to the second mixer 24. It is.

The error measurement unit 54 provides level differences ΔLv1 to ΔLv3 and phase differences ΔP1 to ΔP3 between outputs of the plurality of mixers 14 and 24 when a common correction signal input is given to the plurality of mixers 14 and 24 (see FIG. 2). _Is measured in association with the frequency f _Lo1 of the local signal input (see FIG. 3).

  The level difference between the outputs of the plurality of mixers 14 and 24 is the difference between the output level that is the measurement result of the first level / phase measurement unit 18 and the output level that is the measurement result of the second level / phase measurement unit 28. It is a difference.

  Further, the phase difference between the outputs of the plurality of mixers 14 and 24 is the difference between the output phase that is the measurement result of the first level / phase measurement unit 18 and the output phase that is the measurement result of the second level / phase measurement unit 28. It is a difference.

The error measurement unit 54 interpolates the output level differences ΔLv1 to ΔLv3 with respect to the local signal input frequency f _Lo1 (see FIG. 4A) and the output phase differences ΔP1 to ΔP3 with respect to the local signal input frequency f _Lo1 . The interpolated one (see FIG. 4B) is obtained and recorded.

(2) Input signal under measurement (see Fig. 5)
Next, referring to FIG. 5, a signal under measurement is given to the measuring apparatus 1.

  First, referring to FIG. 6, the directional coupler 3 is connected to the first terminal 11 and the second terminal 21. Then, measured signals (traveling waves and reflected waves) are applied to the first terminal 11 and the second terminal 21, respectively.

  Here, the switch 44 connects the second mixer 24 to the single local signal source 12.

  The signal under measurement (traveling wave) given to the first terminal (CH 1) 11 is given to the R input of the first mixer 14. A local signal input from the local signal source 12 is given to the L input of the first mixer 14. Then, a signal having a frequency equal to the difference between the frequencies of the two inputs (R input and L input) is output from the first mixer 14 (I output).

  The I output (analog signal) of the first mixer 14 is converted into a digital signal by the first A / D converter 16 and supplied to the first level / phase measurement unit 18. The first level / phase measurement unit 18 measures the level (power level) and phase of the output of the first mixer 14 and outputs the result to the characteristic impedance measurement unit 62.

  The signal under measurement (reflected wave) given to the second terminal (CH 2) 21 is given to the R input of the second mixer 24. A local signal input from the local signal source 12 is given to the L input of the second mixer 24. Then, a signal having a frequency equal to the difference between the frequencies of the two inputs (R input and L input) is output from the second mixer 24 (I output).

  The I output (analog signal) of the second mixer 24 is converted into a digital signal by the second A / D converter 26 and supplied to the second level / phase measurement unit 28. The second level / phase measurement unit 28 measures the level (power level) and phase of the output of the second mixer 24 and outputs the result to the characteristic impedance measurement unit 62.

Further, the error correction unit 56 _acquires the value of the frequency f _Lo1 of the local signal input from the local frequency setting unit 52. Further, the error correction unit 56 reads out from the error measurement unit 54 the difference in output level and the difference in output phase corresponding to the value of the frequency f _Lo1 of the local signal input.

If the value of the frequency f _Lo1 of the local signal input is any one of f ₁ , f _2, and f ₃ , the error correction unit 56 is one of the actual measurement values ΔLv1 to ΔLv3 of the error measurement unit 54 and ΔP1 to ΔP3. Any one (see FIG. 3) may be read.

When the frequency f _Lo1 of the local signal input is not any of f ₁ , f ₂ and f ₃ , the error correction unit 56 calculates the difference in output level and output phase corresponding to the frequency f _Lo1 of the local signal input. From the interpolation result recorded in the error measurement unit 54 (see FIGS. 4A and 4B).

The error correction unit 56 gives the read output level difference and output phase difference to the characteristic impedance measurement unit 62. Then, the characteristic impedance measurement unit 62 corrects the measurement result (characteristic impedance Z _CIM ) of the characteristic impedance measurement unit 62 according to the value given from the error correction unit 56.

  Thereby, there is a difference between the electrical length and attenuation of the electrical circuit from the local signal source 12 to the first mixer 14 and the electrical length and attenuation of the electrical circuit from the local signal source 12 to the second mixer 24. An error between the measurement results of the first level / phase measurement unit 18 and the second level / phase measurement unit 28 can be corrected.

  However, if there is no level difference or phase difference between the outputs of the first mixer 14 and the second mixer 24 when a common signal input is given to both the first mixer 14 and the second mixer 24, error correction is performed. Correction by the unit 56 is unnecessary.

The measurement result (characteristic impedance Z _CIM ) of the characteristic impedance measurement unit 62 with the error corrected is given to the load impedance measurement unit 66. The load impedance measuring unit 66 further reads out circuit constants (capacitances C1, C2, C3, inductances L1, L2) in the matcher 5 recorded in the matcher characteristic recording unit 64. The load impedance measuring unit 66 obtains the load impedance Z _L by solving the above equation (1) for the load impedance Z _L. The load impedance Z _L is given to the in-chamber state determination unit 70.

  The in-chamber state determination unit 70 determines whether there is an abnormality in one plasma process in the plasma processing apparatus.

7, chamber state determining section 70, it obtains a real part R _P or imaginary part X _P in a normal state within one plasma process (time 0 to t1). Further, chamber state determination unit 70 in advance seeking a departure from the real part R _P or imaginary part X _P by threshold ΔP0 vertically in a normal state (shown by dotted lines in FIG. 7), which the real part It determines an abnormal state when the R _P or imaginary part X _P has exceeded (time T1～t0) is there.

  Further, the chamber internal state determination unit 70 determines the presence or absence of an abnormal plasma process in a plurality of plasma processes in the plasma processing apparatus.

8, chamber state determining section 70, you obtain a real part R _P or imaginary part X _P in normal one plasma process (see Figure 8 (a)). Further, the in-chamber state determination unit 70 is separated from the real part R _P or the imaginary part X _P (see FIG. 8A) in the normal single plasma process by a threshold value ΔP1 in the vertical direction (FIG. 8 ( In FIG. 5B, the dotted line indicates), and when the real part _RP or the imaginary part _XP is exceeded, it is determined that the plasma process is abnormal.

According to the embodiment of the present invention, the impedance (load impedance Z _L ) in the plasma chamber 6 can be derived. The load impedance Z _L seems to represent the state in the plasma chamber 6 more accurately than the impedance in the matcher 5 and the plasma chamber 6 (characteristic impedance Z _CIM ).

  Moreover, the measuring apparatus 1 according to the embodiment of the present invention acquires traveling waves and reflected waves from between the high-frequency power source 2 and the matcher (impedance matching unit) 5. Therefore, the directional coupler 3 used for acquiring the traveling wave and the reflected wave may be connected between the high-frequency power source 2 and the matcher 5. Thereby, there exist the following advantageous effects.

  First, the directional coupler 3 does not affect the physical phenomenon of the plasma in the plasma chamber 6. When connecting the directional coupler 3, there is no need to process the plasma chamber 6 itself. The directional coupler 3 can be easily connected to the plasma processing apparatus.

  Further, according to the embodiment of the present invention, it is possible to determine whether there is an abnormality in one plasma process in the plasma processing apparatus and whether there is an abnormal plasma process in a plurality of plasma processes.

  Moreover, the output of a single local signal source 12 is used as a local signal in the measuring apparatus 1 having a plurality of channels (CH1, CH2). For this reason, since the phase fluctuation of the local signal in each channel is common, the phase mismatch of the local signal can be reduced.

Furthermore, there is a difference between the electrical length and attenuation of the electrical circuit from the local signal source 12 to the first mixer 14 and the electrical length and attenuation of the electrical circuit from the local signal source 12 to the second mixer 24. The error between the measurement results of the first level / phase measurement unit 18 and the second level / phase measurement unit 28 is recorded in the error measurement unit 54 in association with the value of the frequency f _Lo1 of the local signal input. Since the error correction unit 56 reads the data and gives it to the characteristic impedance measurement unit 62 to correct the measurement result, the error can be corrected.

  Moreover, said embodiment is realizable as follows. A computer equipped with a CPU, a hard disk, and a medium (floppy (registered trademark) disk, CD-ROM, etc.) reader is added to each of the above-described parts, for example, the first level / phase measurement unit 18, the second level / phase measurement unit 28, A medium recording a program for realizing the error measuring unit 54, the error correcting unit 56, the impedance deriving unit 60, and the in-chamber state determining unit 70 is read and installed on the hard disk. Such a method can also realize the above functions.

DESCRIPTION OF SYMBOLS 1 Measuring apparatus 2 High frequency power supply 3 Directional coupler 4 Divider 5 Matcher (impedance matching part)
6 Plasma chamber 6a, 6b Electrode 7 Wafer 11 First terminal 21 Second terminal 31 Output terminal 12 (Single) first local signal source 14 First mixer 16 First A / D converter 18 First level / phase measurement Unit 22 second local signal source 24 second mixer 26 second A / D converter 28 second level / phase measurement unit 32 intermediate frequency signal source 34 correction signal mixer 42, 44 switch 52 local frequency setting unit 54 error measurement unit 56 Error correction unit 60 Impedance derivation unit 62 Characteristic impedance measurement unit 64 Matcher characteristic recording unit 66 Load impedance measurement unit 70 In-chamber state determination unit
f _Lo1 local signal input frequency ΔLv1 to ΔLv3 Level difference between the outputs of the plurality of mixers 14 and 24 ΔP1 to ΔP3 Phase difference between the outputs of the plurality of mixers 14 and 24
Z _CIM characteristic impedance
Z _L Load impedance

Claims (12)

A measuring apparatus for measuring a plasma processing apparatus having a plasma chamber in which plasma is generated, a power source that applies a traveling wave to an electrode in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber. And
A first mixer for outputting a frequency signal equal to the difference between the frequencies of the two inputs of a first and second inputs,
A second mixer for outputting a signal having a frequency equal to a difference between frequencies of two inputs including the first input and the second input;
A single local signal source that provides a common local signal input to the second input of the first mixer and the second input of the second mixer ;
When given a common correction signal input to said first input of said first of said first input and said second mixer mixer, between the output of the first mixer and the second mixer An error measuring unit for measuring the level difference and the phase difference ;
Before SL given the traveling wave to the first input of the first mixer, said when the traveling wave to the first input of the second mixer gave a reflected wave reflected by the plasma chamber the characteristic impedance measuring unit that measures the output or al of the first mixer and the second mixer, the characteristic impedance of the plasma chamber,
Based on the measurement result of the error measurement unit, an error correction unit that corrects the derivation result of the characteristic impedance measurement unit ;
A load impedance measurement unit for measuring a load impedance in the plasma chamber from the measurement result corrected by the error correction unit and a circuit constant in the impedance matching unit;
Measurement device equipped with. The measuring device according to claim 1,
The traveling wave and the reflected wave are acquired from between the power source and the impedance matching unit.
measuring device. The measuring device according to claim 1,
An in-chamber state determination unit for determining a state in the plasma chamber based on the load impedance ;
Measuring device. The measuring device according to claim 3,
The in-chamber state determination unit determines whether or not there is an abnormality in one plasma process in the plasma processing apparatus;
measuring device. The measuring device according to claim 3,
The in-chamber state determination unit determines the presence or absence of an abnormal plasma process in a plurality of plasma processes in the plasma processing apparatus,
measuring device. A measuring device according to any one of claims 1 to 5,
The error measurement unit measures the level difference and the phase difference in association with the frequency of the local signal input;
The error correction unit performs correction according to the frequency of the local signal input.
measuring device. The measuring device according to claim 6,
The error correction unit performs correction based on an interpolation of the measurement result of the error measurement unit with respect to the frequency of the local signal input.
measuring device. A measuring device according to any one of claims 1 to 5,
A correction signal mixer which is provided with the local signal input and the intermediate frequency signal input and outputs a signal having a frequency equal to the sum of the frequencies of the local signal input and the intermediate frequency signal input as the correction signal;
Measuring device. A measuring apparatus for measuring a plasma processing apparatus having a plasma chamber in which plasma is generated, a power source that applies a traveling wave to an electrode in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber. And
A first mixer for outputting a frequency signal equal to the difference between the frequencies of the two inputs of a first and second inputs,
A second mixer for outputting a signal having a frequency equal to a difference between frequencies of two inputs including the first input and the second input;
A single local signal source that provides a common local signal input to the second input of the first mixer and the second input of the second mixer ;
Before SL given the traveling wave to the first input of the first mixer, said when the traveling wave to the first input of the second mixer gave a reflected wave reflected by the plasma chamber the characteristic impedance measuring unit that measures the output or al of the first mixer and the second mixer, the characteristic impedance of the plasma chamber,
From the characteristic impedance and the circuit constant in the impedance matching unit, a load impedance measurement unit that measures the load impedance in the plasma chamber,
With
Said first mixer when given a common signal input to the first input of the first input and the second mixers, said first mixer and level between the output of the second mixer There difference and the phase difference is no,
measuring device. A measuring apparatus for measuring a plasma processing apparatus having a plasma chamber in which plasma is generated, a power source that applies a traveling wave to an electrode in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber. A first mixer for outputting a signal having a frequency equal to the difference between the frequencies of the two inputs comprising the first input and the second input, and the frequencies of the two inputs comprising the first input and the second input. A second mixer that outputs a signal having a frequency equal to the difference between the first mixer, a single local signal input to the second input of the first mixer and the second input of the second mixer . A measurement method for performing measurement processing in a measurement apparatus having a local signal source,
When given a common correction signal input to said first input of said first of said first input and said second mixer mixer, between the output of the first mixer and the second mixer An error measurement process for measuring level difference and phase difference;
Before SL given the traveling wave to the first input of the first mixer, said when the traveling wave to the first input of the second mixer gave a reflected wave reflected by the plasma chamber output either these first mixer and the second mixer, the characteristic impedance measuring step of measuring the characteristic impedance of the plasma chamber,
Based on the measurement result of the error measurement step, an error correction step of correcting the derivation result of the characteristic impedance measurement step ;
A load impedance measurement step of measuring a load impedance in the plasma chamber from the measurement result corrected by the error correction step and a circuit constant in the impedance matching unit;
Measuring method with. A measuring apparatus for measuring a plasma processing apparatus having a plasma chamber in which plasma is generated, a power source that applies a traveling wave to an electrode in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber. A first mixer for outputting a signal having a frequency equal to the difference between the frequencies of the two inputs comprising the first input and the second input, and the frequencies of the two inputs comprising the first input and the second input. A second mixer that outputs a signal having a frequency equal to the difference between the first mixer, a single local signal input to the second input of the first mixer and the second input of the second mixer . A program for causing a computer to execute measurement processing in a measurement apparatus having a local signal source,
The measurement process includes
When given a common correction signal input to said first input of said first of said first input and said second mixer mixer, between the output of the first mixer and the second mixer An error measurement process for measuring level difference and phase difference;
Before SL given the traveling wave to the first input of the first mixer, said when the traveling wave to the first input of the second mixer gave a reflected wave reflected by the plasma chamber output either these first mixer and the second mixer, the characteristic impedance measuring step of measuring the characteristic impedance of the plasma chamber,
Based on the measurement result of the error measurement step, an error correction step of correcting the derivation result of the characteristic impedance measurement step ;
A load impedance measurement step of measuring a load impedance in the plasma chamber from the measurement result corrected by the error correction step and a circuit constant in the impedance matching unit;
A program with A measuring apparatus for measuring a plasma processing apparatus having a plasma chamber in which plasma is generated, a power source that applies a traveling wave to an electrode in the plasma chamber, and an impedance matching unit that performs impedance matching between the power source and the plasma chamber. A first mixer for outputting a signal having a frequency equal to the difference between the frequencies of the two inputs comprising the first input and the second input, and the frequencies of the two inputs comprising the first input and the second input. A second mixer that outputs a signal having a frequency equal to the difference between the first mixer, a single local signal input to the second input of the first mixer and the second input of the second mixer . Read by a computer recording a program for causing the computer to execute measurement processing in a measurement apparatus having a local signal source. A recording medium that can be taken,
The measurement process includes
When given a common correction signal input to said first input of said first of said first input and said second mixer mixer, between the output of the first mixer and the second mixer An error measurement process for measuring level difference and phase difference;
Before SL given the traveling wave to the first input of the first mixer, said when the traveling wave to the first input of the second mixer gave a reflected wave reflected by the plasma chamber output either these first mixer and the second mixer, the characteristic impedance measuring step of measuring the characteristic impedance of the plasma chamber,
Based on the measurement result of the error measurement step, an error correction step of correcting the derivation result of the characteristic impedance measurement step ;
A load impedance measurement step of measuring a load impedance in the plasma chamber from the measurement result corrected by the error correction step and a circuit constant in the impedance matching unit;
A recording medium comprising:

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