JP6305500B2 - Surface-enhanced Raman scattering unit - Google Patents

Description

  The present invention relates to a surface enhanced Raman scattering unit.

As a conventional surface-enhanced Raman scattering unit, a unit including a minute metal structure that generates surface enhanced Raman scattering (SERS) is known (see, for example, Patent Document 1 and Non-Patent Document 1). In such a surface-enhanced Raman scattering unit, when a sample to be subjected to Raman spectroscopic analysis is brought into contact with a fine metal structure and the sample is irradiated with excitation light in that state, surface-enhanced Raman scattering occurs, For example, Raman scattered light enhanced to about 10 ⁸ times is emitted.

  Incidentally, for example, Patent Document 2 discloses that each of one surface of a substrate and the top surfaces of a plurality of microprojections formed on one surface of the substrate (or the bottom surfaces of a plurality of micro holes formed on one surface of the substrate). A micro metal structure in which a metal layer is formed so as to be in a non-contact state (so that the distance between the shortest portions is about 5 nm to 10 μm) is described.

JP 2011-33518 A JP 2009-222507 A

“Q-SERSTM G1 Substrate”, [online], OptScience, Inc. [searched on July 19, 2012], Internet <URL: http: //www.optoscience.com/maker/nanova/pdf/Q- SERS_G1.pdf>

  As described above, when a so-called nanogap is formed in the fine metal structure, local electric field enhancement occurs when the excitation light is irradiated, and the intensity of surface enhanced Raman scattering is increased.

  Therefore, an object of the present invention is to provide a surface-enhanced Raman scattering unit that can increase the intensity of surface-enhanced Raman scattering by a suitable nanogap.

  The surface-enhanced Raman scattering unit of the present invention includes a support part, a fine structure part formed on the support part, and a conductor layer constituting the optical function part that is deposited on the fine structure part and causes surface-enhanced Raman scattering. And the fine structure portion has a plurality of pillars erected on the support portion, and the support portion is provided with a plurality of facing portions that face the side surfaces of the pillars. In the direction in which the pillar protrudes, it is located on the support side with respect to the tip of the pillar, and the opposing portion is formed so as to surround the side surface of the pillar when viewed from the direction in which the pillar protrudes. The support portion, the pillar, and the facing portion are integrally formed of the same material.

  ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to provide the surface enhancement Raman scattering unit which can increase the intensity | strength of surface enhancement Raman scattering with a suitable nanogap.

It is a top view of the surface enhancement Raman scattering unit of a 1st embodiment of the present invention. It is sectional drawing along the II-II line of FIG. It is sectional drawing of the optical function part of the surface enhancement Raman scattering unit of FIG. It is the top view and sectional drawing of the pillar of FIG. 3, and an opposing part. It is a SEM photograph of the optical function part of the surface enhancement Raman scattering unit of FIG. It is sectional drawing which shows the manufacturing process of the surface enhancement Raman scattering unit of FIG. It is sectional drawing which shows the manufacturing process of the surface enhancement Raman scattering unit of FIG. It is the top view and sectional view of a pillar and a counter part of a 2nd embodiment of the present invention. It is the top view and sectional view of a pillar and a counter part of a 3rd embodiment of the present invention.

DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same or an equivalent part, and the overlapping description is abbreviate | omitted.
[First Embodiment]

  As shown in FIG. 1 and FIG. 2, the SERS unit (surface enhanced Raman scattering unit) 1 of the first embodiment includes a handling substrate 2 and a SERS element (surface enhanced Raman scattering device) mounted on the handling substrate 2. 3 is provided. The handling substrate 2 is a rectangular plate-shaped slide glass, a resin substrate, a ceramic substrate, or the like. The SERS element 3 is arranged on the surface 2 a of the handling substrate 2 in a state of being offset from one end portion in the longitudinal direction of the handling substrate 2.

  The SERS element 3 includes a substrate 4 attached on the handling substrate 2, a molding layer 5 formed on the substrate 4, and a conductor layer 6 formed on the molding layer 5. The substrate 4 is formed in a rectangular plate shape with silicon or glass or the like, and has an outer shape of about several hundred μm × several hundred μm to several tens of mm × several tens of mm and a thickness of about 100 μm to 2 mm. The back surface 4b of the substrate 4 is formed on the surface 2a of the handling substrate 2 by direct bonding, bonding using a metal such as solder, eutectic bonding, fusion bonding by laser light irradiation, anodic bonding, or bonding using a resin. It is fixed.

  As shown in FIG. 3, the molding layer 5 includes a fine structure portion 7, a support portion 8, and a frame portion 9. The fine structure portion 7 is a region having a periodic pattern, and is formed on the surface layer opposite to the substrate 4 in the central portion of the molding layer 5. In the fine structure portion 7, a plurality of square pyramidal pillars 71 having a diameter and height of about several nanometers to several hundred nanometers are arranged along the surface (main surface) 4 a of the substrate 4 from several tens of nanometers to several nanometers. They are periodically arranged at a pitch of about 100 μm (preferably 250 nm to 800 nm). When viewed from the thickness direction of the substrate 4, the fine structure portion 7 has a rectangular outer shape of about several hundred μm × several hundred μm to several tens mm × several tens mm. The support portion 8 is a rectangular region that supports the fine structure portion 7, and is formed on the surface 4 a of the substrate 4. The frame portion 9 is a rectangular annular region that surrounds the support portion 8, and is formed on the surface 4 a of the substrate 4. The support part 8 and the frame part 9 have a thickness of about several tens of nanometers to several tens of micrometers. Such a molding layer 5 is formed by, for example, nanoimprinting a resin (acrylic, fluorine-based, epoxy-based, silicone-based, urethane-based, PET, polycarbonate, inorganic / organic hybrid material, etc.) or low-melting glass disposed on the substrate 4. It is integrally formed by molding by the method.

  The plurality of pillars 71 are erected on the support portion 8, and the surface 8 a of the support portion 8 is exposed between the adjacent pillars 71. A plurality of recesses 11 are formed on the surface 8 a of the support portion 8. The recess 11 is provided for each pillar 71. The recess 11 is located on the substrate 4 side with respect to the tip 71a of the pillar 71 in the direction in which the pillar 71 protrudes.

  As shown in FIGS. 4A and 4B, the recess 11 is provided adjacent to the pillar 71 when viewed from the direction in which the pillar 71 protrudes. Specifically, the recess 11 is defined by a side surface 71b of the pillar 71 and a wall (inner surface) 11a facing the side surface 71b. That is, the wall portion 11 a of the recess 11 functions as a facing portion that faces the side surface 71 b of the pillar 71. The wall portion 11 a extends along one side surface 71 b of the pillar 71 when viewed from the direction in which the pillar 71 protrudes. The concave portion 11 has a depth of, for example, about several nm to several hundred nm, and has a length of about several nm to several hundred nm (length along the side surface 71b). The maximum distance between the side surface 71b and the wall portion 11a is, for example, about several tens of nm.

  As shown in FIG. 3, the conductor layer 6 is formed from the fine structure portion 7 to the frame portion 9. In the fine structure portion 7, the conductor layer 6 is formed on the outer surface of the pillar 71, the surface 8 a of the support portion 8, and the inner surface of the recess 11. The conductor layer 6 has a thickness of about several nm to several μm. Such a conductor layer 6 is formed, for example, by depositing or sputtering a conductor such as metal (Au, Ag, Al, Cu, Pt, etc.) on the molding layer 5 molded by the nanoimprint method. The In the SERS element 3, the optical function unit 10 that causes surface enhanced Raman scattering is configured by the fine structure portion 7 and the conductor layer 6 formed on the surface 8 a of the support portion 8.

  FIG. 5 is a SEM photograph of the optical function part of the surface-enhanced Raman scattering unit of FIG. As shown in FIGS. 3 and 5, the conductor layer 6 includes a plurality of nanoparticles NP formed on the side surface 71 b of the pillar 71 and the wall portion 11 a of the recess 11. Each nanoparticle NP is formed in a substantially hemispherical shape, and a gap G is formed between adjacent nanoparticles NP.

  The SERS unit 1 configured as described above is used as follows. First, an annular spacer made of, for example, silicone is disposed on the surface 2 a of the handling substrate 2 so as to surround the SERS element 3. Subsequently, using a pipette or the like, a solution sample (or a powder sample dispersed in a solution of water or ethanol) is dropped inside the spacer, and the sample is placed on the optical function unit 10. . Subsequently, in order to reduce the lens effect, a cover glass is placed on the spacer and brought into close contact with the solution sample.

Subsequently, the SERS unit 1 is set in the Raman spectroscopic analyzer, and the sample placed on the optical function unit 10 is irradiated with excitation light through the cover glass. Thus, the interface with the surface-enhanced Raman scattering and optical function unit 10 and the sample occurs, are released is enhanced to a Raman scattered light, for example, 10 ⁸ times from the sample. Therefore, the Raman spectroscopic analyzer can perform highly sensitive and highly accurate Raman spectroscopic analysis.

  In addition to the method described above, the method for arranging the sample on the optical function unit 10 includes the following method. For example, the handling substrate 2 is gripped, the SERS element 3 is immersed in a sample that is a solution (or a powder sample is dispersed in a solution such as water or ethanol), pulled up, and blown to obtain a sample. May be dried. Alternatively, a small amount of a sample which is a solution (or a powder sample dispersed in a solution of water or ethanol) may be dropped on the optical function unit 10 and the sample may be naturally dried. Further, a sample that is a powder may be dispersed on the optical function unit 10 as it is.

  Next, an example of a manufacturing method of the SERS unit 1 of the first embodiment will be described. First, as shown in FIG. 6A, a master mold M and a film substrate F are prepared. The master mold M includes a fine structure portion M7 corresponding to the fine structure portion 7, and a support portion M8 that supports the fine structure portion M7. On the support portion M8, a plurality of fine structure portions M7 are arranged in a matrix. Subsequently, as shown in FIG. 6 (b), the film base F is pressed against the master mold M, and the pattern of the plurality of microstructures M7 is formed by pressing and heating in this state. Transfer to F.

  Subsequently, as shown in FIG. 6C, by releasing the film base F from the master mold M, as shown in FIG. 6D, a pattern of a plurality of microstructures M7 is obtained. A replica mold (replica film) R to which is transferred is obtained. When releasing, various conditions are controlled. For example, as shown in FIG. 6C, it is possible to control the release direction of the film base F with respect to the master mold M. For example, it is possible to control a tensile load, a mold release speed, etc.

  As shown in FIG. 6D, the replica mold R is formed with pillar forming recesses R71. Further, by controlling the mold release direction as described above, in the replica mold R, a portion that is in contact with the support portion M8 of the master mold M and adjacent to the pillar forming recess R71 is formed with a recess. Part R11 is formed. More specifically, the recess forming portion R11 is formed at a position opposite to the release direction with respect to the pillar forming recess R71.

  Subsequently, as shown in FIG. 7A, a silicon wafer 40 to be the substrate 4 is prepared, and a UV curable resin is applied to the surface 40 a, thereby forming the nanoimprint layer 50 to be the molding layer 5. Formed on the silicon wafer 40. Subsequently, as shown in FIG. 7B, the replica mold R is pressed against the nanoimprint layer 50, and the nanoimprint layer 50 is cured by irradiating UV in this state, whereby the pattern of the replica mold R is nanoprinted. Transfer to layer 50. Subsequently, as shown in FIG. 7C, the replica mold R is released from the nanoimprint layer 50, thereby obtaining the silicon wafer 40 on which the plurality of microstructures 7 are formed.

  Subsequently, as shown in FIG. 7D, a metal such as Au or Ag is formed on the molding layer 5 by a vapor deposition method such as resistance heating vapor deposition or electron beam vapor deposition, or a sputtering method. Layer 6 is formed. At this time, the amount of the metal fine particles to be deposited decreases on the side surface 71b of the pillar 71 and the wall portion 11a of the recess 11, and the nanoparticles NP are formed on both the side surface 71b and the wall portion 11a due to the aggregation action of the metal fine particles. The Further, also on the other side surface of the pillar 71, the amount of deposited metal fine particles is reduced, and the nanoparticle NP is formed.

  Further, when depositing the conductor layer, the metal fine particles evaporate with energy and adhere to the molding layer 5. At this time, since energy is stored, the metal fine particles adhering to the molding layer move slightly on the molding layer 5. Between the side surface 71b and the wall portion 11a, it is considered that the movement of the metal fine particles attached to the molding layer 5 changes as compared with a flat portion, and it is also considered that the nanoparticle NP is formed.

  Furthermore, when depositing the conductor layer, the metal fine particles may be bounced back by the corners of the recesses 11 (portions where the wall 11a and the surface of the support 8 intersect) and head toward the side surface 71b. Thereby, it is considered that the nanoparticles NP are formed on the side surface 71b.

  Subsequently, by cutting the silicon wafer 40 for each fine structure portion 7 (in other words, for each optical function portion 10), a plurality of SERS elements 3 are obtained. Subsequently, the SERS element 3 is attached on the handling substrate 2 to obtain the SERS unit 1.

  As described above, in the SERS unit 1 of the first embodiment, the wall portion 11a facing the side surface 71b of the pillar 71 is provided at a position on the substrate 4 side with respect to the tip end portion 71a of the pillar 71. When the conductor layer 6 is formed by deposition, the amount of the conductive material fine particles deposited on the side surface 71b and the wall portion 11a of the pillar 71 is reduced, and the side surface 71b and the wall portion 11a of the pillar 71 are aggregated due to the aggregation action of the conductive material fine particles. For example, a nanoparticle NP having a hemispherical outer shape is formed, and a gap G is favorably formed between the nanoparticles NP and NP. The gap G formed on the side surface 71b of the pillar 71 preferably functions as a nanogap in which local electric field enhancement occurs. Therefore, according to this SERS unit 1, the intensity of surface enhanced Raman scattering can be increased by a suitable nanogap.

  In the SERS unit 1 described above, the pillars 71 are periodically arranged along the main surface 4a. For this reason, the intensity of the surface enhanced Raman scattering can be stably increased.

  In the SERS unit 1 described above, the support portion 8 is formed with a plurality of recesses 11, and the wall portion 11 a is the inner surface of the recess 11. As a result of diligent research, the inventors of the present invention, as described above, in producing the replica mold R, by controlling the conditions when releasing the film substrate F from the master mold M, in the replica mold R, It has been found that a convex concave portion forming portion R11 can be easily formed in the vicinity of the pillar forming concave portion R71 for forming the pillar. As in the SERS unit 1 described above, when the facing portion is the wall portion 11a that is the inner surface of the concave portion 11, the wall portion 11a can be easily formed by the concave portion forming portion R11 when the molding layer 5 is formed by nanoimprinting. Can do. For this reason, an opposing part can be formed easily and reliably.

Further, in the SERS unit 1 described above, the wall portion 11a extends along the side surface 71b that is a part of the side surface of the pillar 71 when viewed from the direction in which the pillar 71 protrudes. For this reason, the gap G which functions suitably as a nano gap can be increased.
[Second Embodiment]

  FIG. 8 is a plan view and a cross-sectional view of the pillar and the facing portion according to the second embodiment of the present invention. The SERS unit 1 of the second embodiment is mainly different from the SERS unit 1 of the first embodiment described above in that a plurality of recesses 11 and 12 are provided for one pillar 71.

  Specifically, the support portion 8 has a recess 12 in addition to the recess 11. The recess 12 is provided on the opposite side of the recess 11 with the pillar 71 interposed therebetween. The recess 12 is provided adjacent to the pillar 71 when viewed from the direction in which the pillar 71 protrudes. More specifically, the recess 12 is defined by a side surface 71c of the pillar 71 and a wall (inner surface) 12a facing the side surface 71c. That is, the wall portion 12 a of the recess 12 functions as a facing portion that faces the side surface 71 c of the pillar 71. The recess 12 extends along one side surface 71c of the pillar 71 when viewed from the direction in which the pillar 71 protrudes.

  The plurality of recesses 11 and 12 provided for one pillar 71 have different shapes, and the wall portions 11a and 12a also have different shapes. Specifically, the recessed part 12 is smaller than the recessed part 11, and the wall part 12a is also smaller than the wall part 11a.

  The SERS unit 1 configured as described above can be manufactured, for example, as follows. That is, in producing the replica mold R by thermal nanoimprinting in the manufacturing method described above, the temperature and tensile load when releasing the film substrate F from the master mold M are adjusted to thereby adjust the recess 11 and the recess 12 respectively. Can be formed adjacent to the pillar forming recess R71. And the SERS unit which has the recessed parts 11 and 12 can be manufactured by performing the remaining processes like the above using the obtained replica mold.

  As described above, in the SERS unit 1 of the second embodiment, the wall portion 11a facing the side surface 71b of the pillar 71 and the wall portion 12a facing the side surface 71c of the pillar 71 are provided. When the conductor layer 6 is formed by deposition, the side surfaces 71b and 71c of the pillar 71 and the wall portions 11a and 12a reduce the amount of conductive material fine particles to be deposited. Nanoparticles NP having, for example, a hemispherical shape are formed on both 71b and 71c and the walls 11a and 12a, and a gap G is favorably formed between the nanoparticles NP and NP. Therefore, the intensity of surface enhanced Raman scattering can be increased by a suitable nanogap.

  In the SERS unit 1 described above, the pillars 71 are periodically arranged along the main surface 4a. For this reason, the intensity of the surface enhanced Raman scattering can be stably increased.

  In the SERS unit 1 described above, the support portion 8 is formed with a plurality of recesses 11 and recesses 12, the wall 11 a is the inner surface of the recess 11, and the wall 12 a is the inner surface of the recess 12. . For this reason, as described above, when producing the replica mold R by thermal nanoimprint, the wall portion 11a and the wall portion 12a are controlled by controlling the conditions when the film base F is released from the master mold M. It can be formed easily and reliably.

  Further, in the SERS unit 1 described above, the wall portion 11a extends along the side surface 71b which is a part of the side surface of the pillar 71 when viewed from the direction in which the pillar 71 protrudes, and the wall portion 12a. Is extended along the side surface 71c which is a part of the side surface of the pillar 71 when viewed from the direction in which the pillar 71 protrudes. For this reason, the gap G which functions suitably as a nano gap can be increased.

  Further, in the SERS unit 1 described above, the plurality of wall portions 11 a and the wall portion 12 a are provided for one pillar 71. For this reason, the gap G which functions suitably as a nano gap can be increased.

Moreover, in the SERS unit 1 mentioned above, the several wall part 11a provided with respect to one pillar and the wall part 12a have a mutually different shape. For this reason, in the relationship between the pillars 71, by forming the wall portion 11a and the wall portion 12a in the same manner, a predetermined directionality occurs in the formation state of the gap G in the optical function portion 10, and thus a predetermined polarization direction is obtained. The light intensity can be selectively increased.
[Third Embodiment]

  FIG. 9 is a plan view and a cross-sectional view of a pillar and a facing portion according to a third embodiment of the present invention. The SERS unit 1 of the third embodiment is mainly different from the SERS unit 1 of the first embodiment described above in that a recess 13 is provided so as to surround the side surface of the pillar 71.

  Specifically, a recess 13 is formed in the support portion 8. The recess 13 is provided adjacent to the pillar 71 when viewed from the direction in which the pillar 71 protrudes. More specifically, the recess 13 is defined by the side surfaces 71b, 71c, 71d, 71e of the pillar 71 and the wall (inner surface) 13a facing the side surfaces 71b, 71c, 71d, 71e. That is, the wall 13a of the recess 13 functions as a facing portion that faces the side surfaces 71b, 71c, 71d, 71e of the pillar 71. The wall 13a extends so as to surround the side surfaces 71b, 71c, 71d, 71e of the pillar 71 when viewed from the direction in which the pillar 71 protrudes.

  The SERS unit 1 configured as described above can be manufactured, for example, as follows. That is, in producing the replica mold by thermal nanoimprinting in the above manufacturing method, when releasing the film base F from the master mold M, the film base F is pulled up in the thickness direction of the film base F. Thus, the recess forming portion corresponding to the recess 13 can be formed so as to surround the pillar forming recess R71. And the SERS unit which has the wall part 13a can be manufactured by performing the remaining processes like the above using the obtained replica mold.

  As described above, in the SERS unit 1 of the third embodiment, the wall portion 13a facing the side surfaces 71b, 71c, 71d, 71e of the pillar 71 is provided. When the conductor layer 6 is formed by deposition, the amount of conductive material fine particles to be deposited is reduced on the side surfaces 71b, 71c, 71d, 71e of the pillar 71 and the wall portion 13a. Nanoparticles NP having, for example, a hemispherical shape are formed on both of the side surfaces 71b, 71c, 71d, 71e and the wall portion 13a, and a gap G is favorably formed between the nanoparticles NP, NP. Therefore, the intensity of surface enhanced Raman scattering can be increased by a suitable nanogap.

  In the SERS unit 1 described above, the pillars 71 are periodically arranged along the main surface 4a. For this reason, the intensity of the surface enhanced Raman scattering can be stably increased.

  In the SERS unit 1 described above, the support portion 8 is formed with a plurality of recesses 13, and the wall portion 13 a is the inner surface of the recess 13. For this reason, as described above, when producing the replica mold R by thermal nanoimprinting, the wall 13a can be easily and reliably controlled by controlling the conditions for releasing the film substrate F from the master mold M. Can be formed.

  Further, in the SERS unit 1 described above, the wall portion 13a extends so as to surround the side surfaces 71b, 71c, 71d, 71e of the pillar 71 when viewed from the direction in which the pillar 71 protrudes. For this reason, the gap G which functions suitably as a nano gap can be increased.

  The first to third embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments. For example, the cross-sectional shape of the pillar 71 is not limited to a quadrangle, and may be a polygon such as a triangle, a circle, or an ellipse. Thus, the materials and shapes of the components of the SERS unit 1 are not limited to the materials and shapes described above, and various materials and shapes can be applied.

  Moreover, formation of the recessed parts 11, 12, and 13 is not limited to the thing by the parameter adjustment at the time of mold release using the master mold M and the film base material F as mentioned above. For example, by providing the master mold M with recesses corresponding to the recesses 11, 12, and 13, the replica mold R is provided with a recess forming portion, and the replica mold R is pressed against the nanoimprint layer 50, whereby the recess 11 , 12, 13 may be formed. In this case, the replica mold R is not limited to the film substrate F, and may be formed of quartz, silicon, nickel, or the like. Further, for example, by providing convex portions corresponding to the concave portions 11, 12, 13 to the mold and pressing the mold against the nanoimprint layer 50, the concave portions 11, 12, 13 are formed without using the replica mold R. May be.

  Further, the conductor layer 6 is not limited to the one directly formed on the fine structure portion 7, but a buffer metal (Ti, Cr, etc.) layer for improving the adhesion of the metal to the fine structure portion 7 or the like. Alternatively, it may be formed indirectly on the fine structure 7 through some layer.

  Moreover, although wall part 11a, 12a, 13a which is the inner surface of recessed part 11, 12, 13 is functioning as an opposing part, respectively, the protrusion part which protrudes from the support part 8 is provided so that the side surface of the pillar 71 may be opposed, This protruding portion may be the opposing portion. In this case, the protrusion is made adjacent to the pillar 71 so that the amount of metal fine particles passing between the side surface of the pillar 71 and the side surface of the protrusion is reduced when the conductor layer is deposited, and the height of the protrusion is set to the pillar. By making the height lower than 71 (that is, the protruding portion that is the opposing portion is positioned on the substrate 4 side with respect to the tip of the pillar in the direction in which the pillar protrudes), the above-described wall portions 11a, 12a, It is possible to make it function similarly to 13a. In this case, the distance between the pillars 71 and the protrusions is made smaller than the distance between the pillars 71 arranged periodically.

  DESCRIPTION OF SYMBOLS 1 ... SERS unit (surface enhancement Raman scattering unit), 4 ... Substrate, 4a ... Surface (main surface), 5 ... Molding layer, 6 ... Conductor layer, 7 ... Fine structure part, 8 ... Support part, 10 ... Optical function 11, 12, 13... Recess, 11 a, 12 a, 13 a... Wall part (opposing part), 71... Pillar, 71 a .. tip part, 71 b, 71 c, 71 d, 71 e.

Claims (10)

A support part;
A microstructure formed on the support;
A conductor layer that is deposited on the microstructure and forms an optical function unit that causes surface-enhanced Raman scattering; and
The fine structure portion has a plurality of pillars erected on the support portion,
The support portion is provided with a plurality of facing portions facing the side surface of the pillar,
The facing portion is located on the support portion side with respect to a tip portion of the pillar in a direction in which the pillar protrudes,
The facing portion is formed so as to surround a side surface of the pillar when viewed from the direction in which the pillar protrudes,
The surface-enhanced Raman scattering unit, wherein the support portion, the pillar, and the facing portion are integrally formed of the same material.   The surface-enhanced Raman scattering unit according to claim 1, wherein the pillars are periodically arranged when viewed from the direction in which the pillars protrude. A plurality of concave portions are formed in the support portion,
The surface-enhanced Raman scattering unit according to claim 1, wherein the facing portion is an inner surface of the concave portion. A support part;
A microstructure formed on the support;
A conductor layer that is deposited on the microstructure and forms an optical function unit that causes surface-enhanced Raman scattering; and
The fine structure portion has a plurality of pillars erected on the support portion,
The support part is provided with a plurality of recesses,
The concave portion is positioned on the support portion side with respect to a tip portion of the pillar in a direction in which the pillar protrudes,
The recess is formed so as to surround a side surface of the pillar when viewed from the direction in which the pillar protrudes.
The support portion, the pillar, and the recess are integrally formed of the same material.
Surface-enhanced Raman scattering unit. The surface-enhanced Raman scattering unit according to claim 4, wherein the concave portion is provided adjacent to the pillar when viewed from the direction in which the pillar protrudes. The surface-enhanced Raman scattering unit according to claim 4 or 5, wherein the concave portion is defined by the side surface of the pillar and a wall portion facing the side surface. The surface-enhanced Raman scattering unit according to any one of claims 4 to 6, wherein the conductor layer is formed on an outer surface of the pillar, a surface of the support portion, and an inner surface of the recess. The surface-enhanced Raman scattering unit according to claim 4, wherein the conductor layer includes a plurality of nanoparticles formed on the side surface of the pillar. The surface-enhanced Raman scattering unit according to claim 8, wherein a gap is formed between the adjacent nanoparticles. The surface-enhanced Raman scattering unit according to any one of claims 4 to 9 , wherein the pillars are periodically arranged when viewed from the direction in which the pillars protrude .