JP6263484B2 - Electrostatic chuck and manufacturing method thereof - Google Patents
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- JP6263484B2 JP6263484B2 JP2015017872A JP2015017872A JP6263484B2 JP 6263484 B2 JP6263484 B2 JP 6263484B2 JP 2015017872 A JP2015017872 A JP 2015017872A JP 2015017872 A JP2015017872 A JP 2015017872A JP 6263484 B2 JP6263484 B2 JP 6263484B2
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- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000000919 ceramic Substances 0.000 claims description 46
- 239000011241 protective layer Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 33
- 238000004891 communication Methods 0.000 claims description 19
- 238000005524 ceramic coating Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000007751 thermal spraying Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000011109 contamination Methods 0.000 description 20
- 238000009423 ventilation Methods 0.000 description 17
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 12
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
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- 238000012360 testing method Methods 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000006091 Macor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000004323 axial length Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052628 phlogopite Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Description
本発明は、ウエハ等の基板を保持する静電チャックに関する。 The present invention relates to an electrostatic chuck for holding a substrate such as a wafer.
半導体ウエハなどの基板のプラズマ処理に際して、当該基板を保持するために用いられる静電チャックには、当該基板の周囲に対してヘリウムガスなどを供給するための通気経路が設けられている場合、この通気経路においてアーキング（異常放電）が発生する可能性がある。 In plasma processing of a substrate such as a semiconductor wafer, an electrostatic chuck used for holding the substrate is provided with a ventilation path for supplying helium gas or the like around the substrate. There is a possibility of arcing (abnormal discharge) in the ventilation path.
そこで、アルミニウム等の導電性のプレートの開口に嵌め込まれたアルミナ等からなる誘電体チューブと、当該チューブの一端部を覆う多孔質性のアルミナ等からなる誘電体層によりガス流路を構成することが提案されている（特許文献１参照）。チューブの一端部および誘電体層の密着性の向上のため、当該チューブとして多孔質焼結体またはマシナブルセラミックスからなるチューブを採用することが提案されている（特許文献２参照）。 Therefore, a gas flow path is constituted by a dielectric tube made of alumina or the like fitted into an opening of a conductive plate such as aluminum and a dielectric layer made of porous alumina or the like covering one end of the tube. Has been proposed (see Patent Document 1). In order to improve the adhesion between the one end of the tube and the dielectric layer, it has been proposed to employ a tube made of a porous sintered body or machinable ceramic as the tube (see Patent Document 2).
しかし、マシナブルセラミックスに含有されているナトリウム等の物質により、基板のコンタミネーション（汚染）が生じる可能性がある。 However, there is a possibility that contamination (contamination) of the substrate may occur due to a substance such as sodium contained in the machinable ceramic.
そこで、本発明は、アーキングの発生を防止しながらも保持対象である基板のコンタミネーションの防止を図りうる静電チャックを提供することを目的とする。 Accordingly, an object of the present invention is to provide an electrostatic chuck capable of preventing contamination of a substrate to be held while preventing occurrence of arcing.
本発明は、上端面から下方に延在する部分を有する連通孔が形成されている導電性の基体と、前記連通孔のうち前記基体の上端面から下方に延在する部分の側面に対して側面が全周にわたって密着している筒状の絶縁性の成形体と、前記基体のおよび前記成形体のそれぞれの上端面を被覆し、前記成形体の中空部に連通する貫通孔を有するセラミックスコーティング膜からなる保護層と、を備えている静電チャックに関する。 The present invention relates to a conductive substrate having a communication hole having a portion extending downward from an upper end surface, and a side surface of a portion of the communication hole extending downward from the upper end surface of the substrate. A cylindrical insulating molded body whose side surfaces are in close contact with the entire circumference, and a ceramic coating having a through hole that covers the upper surface of each of the base body and the molded body and communicates with the hollow portion of the molded body The present invention relates to an electrostatic chuck including a protective layer made of a film.
本発明の静電チャックは、前記成形体が、筒状の絶縁性マシナブルセラミックスからなる第１成形体と、前記第１成形体の内側面に対して全周にわたり密着している、当該マシナブルセラミックスとは異なる筒状の絶縁性セラミックスからなる第２成形体と、により構成されていることを特徴とする。 In the electrostatic chuck of the present invention, the molded body is in close contact with the first molded body made of a cylindrical insulating machinable ceramic and the inner surface of the first molded body over the entire circumference. It is comprised by the 2nd molded object which consists of a cylindrical insulating ceramics different from a nablable ceramics.
本発明の静電チャックによれば、成形体の中空部およびこれに連通する保護層の貫通孔を含む通気経路におけるアーキングの発生が、絶縁性の成形体によって防止または抑制されうる。二重構造の成形体の外側を構成する第１成形体がマシナブルセラミックスからなるので、セラミックスコーティング膜からなる保護層との密着性の向上が図られている。成形体の内側を構成する第２成形体がマシナブルセラミックスとは異なる絶縁性セラミックスからなるので、マシナブルセラミックスが含有する材料が通気経路を通じて基板の周囲に供給されることによる当該基板のコンタミネーションが防止または抑制されうる。第２成形体は、基板のコンタミネーションの原因となる物質を含んでいない緻密質セラミック焼結体、多孔質セラミックス焼結体または多孔質セラミックス溶射体によって構成されている。 According to the electrostatic chuck of the present invention, the occurrence of arcing in the ventilation path including the hollow portion of the molded body and the through hole of the protective layer communicating with the hollow portion can be prevented or suppressed by the insulating molded body. Since the 1st molded object which comprises the outer side of the molded object of a double structure consists of machinable ceramics, the improvement of adhesiveness with the protective layer which consists of a ceramic coating film is aimed at. Since the second molded body constituting the inside of the molded body is made of insulating ceramics different from machinable ceramics, contamination of the substrate by supplying the material contained in the machinable ceramics to the periphery of the substrate through the ventilation path Can be prevented or suppressed. The second compact is composed of a dense ceramic sintered body, a porous ceramic sintered body, or a porous ceramic sprayed body that does not contain a substance that causes substrate contamination.
前記静電チャックにおいて、前記第２成形体が、前記成形体の軸線方向全長にわたって前記第１成形体の内側面に対して全周にわたり密着していることが好ましい。前記成形体の上端面における前記第２成形体の上端面の占有面積比率が０〜０．１０であることが好ましい。前記静電チャックにおいて、前記第２成形体が、前記成形体の下端面の少なくとの一部に対して密着する部分を有するように形成されていることが好ましい。前記成形体の下端面における前記第２成形体の下端面の占有面積比率が０．２５〜１であることが好ましい。 In the electrostatic chuck, it is preferable that the second compact is in close contact with the inner surface of the first compact over the entire length in the axial direction of the compact. It is preferable that the occupied area ratio of the upper end surface of the second molded body in the upper end surface of the molded body is 0 to 0.10. In the electrostatic chuck, it is preferable that the second molded body is formed to have a portion that is in close contact with at least a part of a lower end surface of the molded body. It is preferable that the occupied area ratio of the lower end surface of the second molded body in the lower end surface of the molded body is 0.25 to 1.
当該構成の静電チャックによれば、マシナブルセラミックスからなる第１成形体の通気経路に対する露出面積の低減が図られる。このため、マシナブルセラミックスが含有する材料が通気経路を通じて基板の周囲に供給されることによる当該基板のコンタミネーションがより確実に防止または抑制されうる。 According to the electrostatic chuck having this configuration, the exposed area of the first molded body made of machinable ceramics with respect to the ventilation path can be reduced. For this reason, the contamination of the board | substrate by the material which a machinable ceramic contains is supplied to the circumference | surroundings of a board | substrate through a ventilation | gas_flow path can be prevented or suppressed more reliably.
前記静電チャックにおいて、前記第２成形体が、その上端面の面積が下端面の面積よりも小さくなるように形成されていることが好ましい。 In the electrostatic chuck, it is preferable that the second molded body is formed such that the area of the upper end surface is smaller than the area of the lower end surface.
当該構成の静電チャックによれば、成形体において保護層に密着する上端面において第１成形体の上端面が占める面積の増大が図られる。このため、第２成形体が緻密質セラミックス焼結体からなる場合でも、成形体の一端面および保護層の密着性の向上が図られる。 According to the electrostatic chuck having the above configuration, the area occupied by the upper end surface of the first molded body can be increased in the upper end surface in close contact with the protective layer in the molded body. For this reason, even when the second compact is made of a dense ceramic sintered body, the adhesion between the one end surface of the compact and the protective layer can be improved.
前記静電チャックにおいて、前記保護層との熱膨張係数の偏差が−３［ｐｐｍ］〜＋３［ｐｐｍ］の範囲内であるマシナブルセラミックスからなることが好ましい。 The electrostatic chuck is preferably made of machinable ceramics having a thermal expansion coefficient deviation from the protective layer within a range of −3 [ppm] to +3 [ppm].
当該構成の静電チャックによれば、第１成形体および保護層の間の熱膨張の差の低減が図られるので、当該差の過大によって保護層が第１成形体から剥離する可能性の低減が図られるので、当該剥離に伴う基板のコンタミネーションが確実に抑制される。 According to the electrostatic chuck having such a configuration, the difference in thermal expansion between the first molded body and the protective layer can be reduced, so that the possibility of the protective layer peeling from the first molded body due to the excessive difference is reduced. Therefore, the contamination of the substrate accompanying the peeling is surely suppressed.
本発明の静電チャックの製造方法は、筒状の絶縁性マシナブルセラミックスからなる第１成形体の中空部に対して、マシナブルセラミックスとは異なる筒状または柱状の絶縁性セラミックス焼結体からなる第２成形体を圧入し、前記第１成形体およびその内側面に対して外側面が全周にわたり密着している前記第２成形体により構成される成形体を作製する工程と、金属からなる基体において上端面から下方に延在する部分を有するように形成されている連通孔に対して前記成形体をその上端面が露出するように圧入し、前記連通孔のうち前記基体の上端面から下方に延在する部分の側面に対して全周にわたって前記成形体の外側面を密着させる工程と、前記基体および前記成形体のそれぞれの上端面に、溶射によりセラミックコーティング膜からなる保護層を形成する工程と、前記第２成形体が柱状である場合、前記第２成形体にその軸線方向に貫通し、前記保護層の貫通孔に連通する中空部を形成する工程と、前記保護層をその厚み方向に貫通し、前記第２成形体の中空部に連通する貫通孔を形成する工程と、を含むことを特徴とする。 The method for manufacturing an electrostatic chuck according to the present invention includes a cylindrical or columnar insulating ceramic sintered body different from a machinable ceramic to a hollow portion of a first molded body made of a cylindrical insulating machinable ceramic. A step of producing a molded body constituted by the second molded body, the second molded body being press-fitted, and the first molded body and the second molded body, the outer surface of which is in close contact with the inner surface of the first molded body; The formed body is press-fitted into a communication hole formed so as to have a portion extending downward from the upper end surface of the base body so that the upper end surface thereof is exposed, and the upper end surface of the base body in the communication hole. A step of bringing the outer surface of the molded body into close contact with a side surface of a portion extending downward from the entire surface, and ceramic coating by thermal spraying on the upper end surfaces of the base body and the molded body, respectively. And a step of forming a hollow portion that penetrates through the second molded body in the axial direction thereof and communicates with a through hole of the protective layer when the second molded body is columnar. And a step of penetrating the protective layer in the thickness direction and forming a through hole communicating with the hollow portion of the second molded body.
（構成（第１実施形態））
図１には、本発明の第１実施形態としての静電チャックのうち、当該静電チャックが有する複数の通気経路のうち一の通気経路の周辺部分のみが示されている。静電チャックは、全体的には略円板形状に形成され、複数の通気経路は当該円板と中心を同じくする同心円に沿って断続的に配置されている。静電チャックは、半導体製造装置またはフラットパネルディスプレイ製造装置などにおいて、シリコンウエハ等の基板を固定するために用いられる。静電チャックは、基体１、成形体２および保護層４を備えている。
(Configuration (first embodiment))
FIG. 1 shows only the peripheral portion of one ventilation path among a plurality of ventilation paths of the electrostatic chuck of the electrostatic chuck as the first embodiment of the present invention. The electrostatic chuck is generally formed in a substantially disk shape, and the plurality of ventilation paths are intermittently arranged along a concentric circle having the same center as that of the disk. The electrostatic chuck is used for fixing a substrate such as a silicon wafer in a semiconductor manufacturing apparatus or a flat panel display manufacturing apparatus. The electrostatic chuck includes a base body 1, a molded body 2, and a protective layer 4.
基体１は、金属（たとえば、ＡｌもしくはＴｉ）または金属−セラミックス複合体（たとえば、Ａｌ−ＳｉＣ複合体もしくはＳｉ−ＳｉＣ複合体）などの導電性材料により形成されている。基体１には、その上端面から下端面まで下方に延在する直径３〜１０［ｍｍ］程度の断面円形状の連通孔１０が形成されている。連通孔１０は、基体１の上端面から下方に延在する部分を有していればよく、たとえば中空構造の基体１の内部に形成された横方向に延在する中空空間から分岐する経路に連通する孔であってもよい。連通孔１０の断面形状は円形のほか、楕円形、矩形または三角形などの任意の形状が採用されてもよい。基体１には、連通孔１０をその下部から上部にかけて拡径させる段差１１が設けられている。当該段差１１は複数あってもよいし、省略されてもよい。連通孔１０がその軸線方向について断続的にではなく連続的にその径または面積が変化するような形状であってもよい。 The substrate 1 is formed of a conductive material such as a metal (for example, Al or Ti) or a metal-ceramic composite (for example, an Al-SiC composite or a Si-SiC composite). A communication hole 10 having a circular cross section with a diameter of about 3 to 10 [mm] extending downward from the upper end surface to the lower end surface is formed in the base body 1. The communication hole 10 only needs to have a portion extending downward from the upper end surface of the base body 1. For example, the communication hole 10 is formed in a path branched from a hollow space extending in the lateral direction formed inside the base body 1 having a hollow structure. It may be a hole that communicates. The cross-sectional shape of the communication hole 10 may be any shape such as an ellipse, a rectangle, or a triangle in addition to a circle. The base body 1 is provided with a step 11 for expanding the diameter of the communication hole 10 from the lower part to the upper part. There may be a plurality of the steps 11 or may be omitted. The communication hole 10 may have a shape whose diameter or area continuously changes in the axial direction instead of intermittently.
成形体２は、略円筒状の絶縁性材料からなり、その外側面が基体１の連通孔１０の側面に対して全周にわたり、かつ、当該円筒の全長にわたり密着している。成形体２の上端面の高さ位置は、基体１の上端面の高さ位置と同一であるが、当該位置が相互にずれていてもよい。成形体２は連通孔１０に圧入され、その結果生じる応力で連通孔１０の側面において基体１に対して密着している。接着剤を用いて、成形体２および連通孔１０の側面接着させることも可能である。シリコーン接着剤などを用いることができるが、その際には保護層４との密着性も考慮して接着剤を選ぶ必要がある。 The molded body 2 is made of a substantially cylindrical insulating material, and its outer surface is in close contact with the side surface of the communication hole 10 of the base 1 over the entire circumference and over the entire length of the cylinder. The height position of the upper end surface of the molded body 2 is the same as the height position of the upper end surface of the base 1, but the positions may be shifted from each other. The molded body 2 is press-fitted into the communication hole 10 and is in close contact with the base body 1 on the side surface of the communication hole 10 due to the resulting stress. It is also possible to adhere the side surfaces of the molded body 2 and the communication hole 10 using an adhesive. A silicone adhesive or the like can be used, but in that case, it is necessary to select an adhesive in consideration of adhesion to the protective layer 4.
成形体２の高さは、基体１の厚さ以下であり通常５〜２０［ｍｍ］程度である。成形体２は、略円筒状の第１成形体２１（外側成形体）および第１成形体２１の内側面に対して全周にわたり密着している略円筒状の第２成形体２２（内側成形体）により構成されている。第１成形体２１および第２成形体２２のそれぞれの断面形状は、円形のほか、楕円形、矩形または三角形などであってもよい。第２成形体２２は第１成形体２１の中空部に圧入され、その結果生じる応力で外側面において第１成形体２１の内側面に対して密着している。接着剤を用いて、第１成形体２１の内側面および第２成形体２２の外側面を接着させることも可能である。 The height of the molded body 2 is not more than the thickness of the substrate 1 and is usually about 5 to 20 [mm]. The molded body 2 includes a substantially cylindrical first molded body 21 (outer molded body) and a substantially cylindrical second molded body 22 (inner molded body) in close contact with the inner surface of the first molded body 21. Body). The cross-sectional shape of each of the first molded body 21 and the second molded body 22 may be an ellipse, a rectangle, or a triangle in addition to a circle. The second molded body 22 is press-fitted into the hollow portion of the first molded body 21, and is in close contact with the inner surface of the first molded body 21 on the outer surface due to the resulting stress. It is also possible to bond the inner surface of the first molded body 21 and the outer surface of the second molded body 22 using an adhesive.
成形体２の上端面における第２成形体２２の上端面の占有面積比率が０〜０．１０であることが好ましい。成形体２の下端面における第２成形体２２の下端面の占有面積比率が０．２５〜１であることが好ましい。 The occupied area ratio of the upper end surface of the second molded body 22 to the upper end surface of the molded body 2 is preferably 0 to 0.10. The occupied area ratio of the lower end surface of the second molded body 22 in the lower end surface of the molded body 2 is preferably 0.25 to 1.
第１成形体２１はガラス、酸化物セラミックスまたは非酸化物などをマトリックスとし、雲母、窒化ホウ素などをフィラーとする、マコール、ホトベール、アルマタイト、シェイパル、ホトベールＩＩ（いずれも登録商標）などのマシナブルセラミックスからなる。 The first molded body 21 is machinable such as Macor, Photovale, Almatite, Shapepal, Photovale II (all are registered trademarks) using glass, oxide ceramics or non-oxide as a matrix and mica, boron nitride or the like as a filler. Made of ceramics.
特に、第１成形体２１および保護層４との熱膨張の差が過大になって保護層４が成形体２から剥離する可能性を低減させる観点から、保護層４に対する熱膨張係数の偏差が−３［ｐｐｍ］〜＋３［ｐｐｍ］での範囲に含まれるようなマシナブルセラミックスにより第１成形体２１が構成されていることが好ましい。保護層４がＡｌ2Ｏ3、Ｙ2Ｏ3およびＺｒＯ2のそれぞれからなる場合、その熱膨張係数は８［ｐｐｍ］、７．３［ｐｐｍ］および９〜１０［ｐｐｍ］のそれぞれである。これらの場合、第１成形体２１は熱膨張係数９．３［ｐｐｍ］のマコールまたは熱膨張係数８．５［ｐｐｍ］のホトベールからなることが好ましい。 Particularly, from the viewpoint of reducing the possibility that the protective layer 4 is peeled off from the molded body 2 due to an excessive difference in thermal expansion between the first molded body 21 and the protective layer 4, the deviation of the thermal expansion coefficient with respect to the protective layer 4 is small. It is preferable that the 1st molded object 21 is comprised with machinable ceramics included in the range of -3 [ppm]-+3 [ppm]. When the protective layer 4 is made of Al 2 O 3 , Y 2 O 3 and ZrO 2 , the thermal expansion coefficients are 8 [ppm], 7.3 [ppm] and 9 to 10 [ppm], respectively. In these cases, the first molded body 21 is preferably made of macor having a thermal expansion coefficient of 9.3 [ppm] or a photobail having a thermal expansion coefficient of 8.5 [ppm].
第２成形体２２は、マシナブルセラミックスとは異なる、Ａｌ２Ｏ３、ＳｉＯ２、ＺｒＯ２もしくはＹ２Ｏ３またはそれらの複合材などの絶縁性セラミックスからなる。たとえばＡｌ２Ｏ３の第２成形体２２が用いられる場合、純度が９９．５％以上であることが好ましく、９９．９％以上であることがさらに好ましい。純度を高くすることにより、基板の汚染を防止することができる。第２成形体２２は、緻密質の焼結体、または多孔質の焼結体もしくは溶射体であってもよい。第２成形体２２が多孔質である場合、保護層４との密着性およびアーキング防止の観点から、気孔径の分布範囲が２〜２０［μｍ］であり、かつ、気孔率が１０〜５０％、特に１０〜３５％であることが好ましい。 The second molded body 22 is made of an insulating ceramic such as Al 2 O 3 , SiO 2, ZrO 2, Y 2 O 3, or a composite material thereof, which is different from machinable ceramics. For example, when the second molded body 22 made of Al 2 O 3 is used, the purity is preferably 99.5% or more, and more preferably 99.9% or more. By increasing the purity, contamination of the substrate can be prevented. The second molded body 22 may be a dense sintered body, or a porous sintered body or sprayed body. When the second molded body 22 is porous, from the viewpoint of adhesion to the protective layer 4 and prevention of arcing, the pore diameter distribution range is 2 to 20 [μm], and the porosity is 10 to 50%. In particular, 10 to 35% is preferable.
第１成形体２１の外側面には、基体１の段差１１に相当する位置で当該第１成形体２１の外径をその下側から上側にかけて断続的に拡径させる外側段差２１１が設けられている。第１成形体２１の内側面には、当該第１成形体２１の内径を下側から上側にかけて断続的に縮径させるような内側段差２１２が設けられている。外側段差２１１および内側段差２１２の高さ位置は同じであってもよく、外側段差２１１のほうが内側段差２１２より上に位置してもよく、内側段差２１２のほうが外側段差２１１より上に位置してもよい。外側段差２１１および内側段差２１２の少なくとも一方が複数あってもよいし、省略されてもよい。第１成形体２１がその軸線方向について断続的にではなく連続的にその外側面もしくは内側面の径、または外側輪郭により囲まれる面積もしくは内側輪郭により囲まれる面積が変化するような形状であってもよい。 The outer surface of the first molded body 21 is provided with an outer step 211 that intermittently expands the outer diameter of the first molded body 21 from the lower side to the upper side at a position corresponding to the step 11 of the base body 1. Yes. An inner step 212 is provided on the inner side surface of the first molded body 21 so as to intermittently reduce the inner diameter of the first molded body 21 from the lower side to the upper side. The heights of the outer step 211 and the inner step 212 may be the same, the outer step 211 may be located above the inner step 212, and the inner step 212 is located above the outer step 211. Also good. There may be a plurality of at least one of the outer step 211 and the inner step 212 or may be omitted. The shape of the first molded body 21 is such that the diameter of the outer surface or inner surface of the first molded body 21 changes continuously, not intermittently, or the area surrounded by the outer contour or the area surrounded by the inner contour changes. Also good.
第２成形体２２の外側面には、第１成形体２１の内側段差２１２に相当する位置で当該第２成形体２２の外径をその下側から上側にかけて断続的に縮径させる外側段差２２２が設けられている。第２成形体２２の内側面には、当該第２成形体２２の内径（成形体２の中空部２０の径）を下側から上側にかけて断続的に縮径させるような内側段差２２０が設けられている。外側段差２２２および内側段差２２０の高さ位置は同じであってもよく、外側段差２２２のほうが内側段差２２０より上に位置してもよく、内側段差２２０のほうが外側段差２２２より上に位置してもよい。外側段差２２２および内側段差２２０の少なくとも一方が複数あってもよいし、省略されてもよい。第２成形体２２がその軸線方向について断続的にではなく連続的にその外側面もしくは内側面の径、または外側輪郭により囲まれる面積もしくは内側輪郭により囲まれる面積が変化するような形状であってもよい。 On the outer surface of the second molded body 22, an outer step 222 that reduces the outer diameter of the second molded body 22 intermittently from the lower side to the upper side at a position corresponding to the inner step 212 of the first molded body 21. Is provided. An inner step 220 is provided on the inner surface of the second molded body 22 so as to intermittently reduce the inner diameter of the second molded body 22 (the diameter of the hollow portion 20 of the molded body 2) from the lower side to the upper side. ing. The heights of the outer step 222 and the inner step 220 may be the same, the outer step 222 may be located above the inner step 220, and the inner step 220 is located above the outer step 222. Also good. There may be a plurality of at least one of the outer step 222 and the inner step 220 or may be omitted. The shape of the second molded body 22 is such that the diameter of the outer surface or inner surface of the second molded body 22 changes continuously, not intermittently, or the area surrounded by the outer contour or the area surrounded by the inner contour changes. Also good.
第１成形体２１および第２成形体２２のそれぞれの上端面の高さ位置は同じであってもよく、異なっていてもよい。たとえば、第２成形体２２の上端面が第１成形体２１の上端面よりも低い位置にあってもよい。第１成形体２１および第２成形体２２のそれぞれの下端面の高さ位置は同じであってもよく、異なっていてもよい。たとえば、第２成形体２２の下端面が第１成形体２１の下端面よりも高い位置にあってもよい。すなわち、第１成形体２１の内側面の軸線方向の全部ではなく一部に対して、第２成形体２２の外側面が全周にわたり密着していてもよい。 The height positions of the upper end surfaces of the first molded body 21 and the second molded body 22 may be the same or different. For example, the upper end surface of the second molded body 22 may be at a position lower than the upper end surface of the first molded body 21. The height positions of the lower end surfaces of the first molded body 21 and the second molded body 22 may be the same or different. For example, the lower end surface of the second molded body 22 may be higher than the lower end surface of the first molded body 21. In other words, the outer surface of the second molded body 22 may be in close contact with the entire inner periphery of the first molded body 21 with respect to a part rather than the entire axial direction.
成形体２の中空部２０のうち上部（細穴）の直径は、アーキング発生防止の観点から０．５［ｍｍ］以下、特に０．２［ｍｍ］以下であることが好ましい。中空部２０の小径上部の直径の大小によりガス流量の多少が調節される。１つの成形体２に独立した複数の中空部が設けられることによってガス流量が調節される。中空部２０の下部（太穴またはザグリ穴）の直径は２［ｍｍ］以上であることが好ましい。 The diameter of the upper part (thin hole) in the hollow part 20 of the molded body 2 is preferably 0.5 [mm] or less, particularly preferably 0.2 [mm] or less from the viewpoint of preventing arcing. The gas flow rate is adjusted depending on the diameter of the upper portion of the small diameter of the hollow portion 20. The gas flow rate is adjusted by providing a plurality of independent hollow portions in one molded body 2. The diameter of the lower part (thick hole or counterbore hole) of the hollow part 20 is preferably 2 [mm] or more.
保護層４は、基体１および成形体２の一端面（上端面）を被覆するセラミックコーティング膜により構成されている。保護層４は、溶射のほか、ＣＶＤ、イオンプレーティング、スパッタリング、またはエアロゾルデポジション等による乾式製膜や、セラミックペーストを基体１および成形体２のそれぞれの上端面に塗布し、乾燥後焼き付ける湿式製膜の方法により形成されていてもよい。保護層４は、Ａｌ２Ｏ３、Ｙ２Ｏ３もしくはＺｒＯ２またはこれらを主成分とした複合物等からなる。保護層４の厚みは、１００〜１０００［μｍ］であることが好ましい。保護層４には、厚み方向に貫通する、成形体２の中空部２０に連通する貫通孔４０が設けられている。成形体２の中空部２０および保護層４の貫通孔４０により静電チャックの通気経路が構成されている。 The protective layer 4 is composed of a ceramic coating film that covers one end face (upper end face) of the base body 1 and the molded body 2. In addition to thermal spraying, the protective layer 4 is a wet type in which dry film formation by CVD, ion plating, sputtering, aerosol deposition, or the like, or ceramic paste is applied to the upper end surfaces of the substrate 1 and the molded body 2 and dried and then baked. It may be formed by a film forming method. The protective layer 4 is made of Al 2 O 3 , Y 2 O 3, ZrO 2 or a composite containing these as main components. The thickness of the protective layer 4 is preferably 100 to 1000 [μm]. The protective layer 4 is provided with a through hole 40 that penetrates in the thickness direction and communicates with the hollow portion 20 of the molded body 2. The hollow portion 20 of the molded body 2 and the through hole 40 of the protective layer 4 constitute an air passage for the electrostatic chuck.
（構成（第２実施形態））
図２には、本発明の第２実施形態としての静電チャックのうち、当該静電チャックが有する複数の通気経路のうち一の通気経路の周辺部分のみが示されている。本発明の第１実施形態としての静電チャック（図１参照）と共通の構成については同一符号を用いるとともに説明を省略する。第２実施形態の静電チャックは、第２成形体２２が略二段円筒状ではなく上底を上端面とする略円錐台筒状であり、第１成形体２１の内側面も当該円錐台の側面に沿った形状とされている点で第１実施形態の静電チャックと異なっている。
(Configuration (second embodiment))
FIG. 2 shows only a peripheral portion of one ventilation path among a plurality of ventilation paths of the electrostatic chuck of the electrostatic chuck as the second embodiment of the present invention. Constituent elements common to the electrostatic chuck (see FIG. 1) as the first embodiment of the present invention are denoted by the same reference numerals and description thereof is omitted. In the electrostatic chuck according to the second embodiment, the second molded body 22 is not a substantially two-stage cylindrical shape but a substantially truncated cone shape having an upper base as an upper end surface, and the inner surface of the first molded body 21 is also the truncated cone. This is different from the electrostatic chuck of the first embodiment in that it is shaped along the side surface.
当該構成の静電チャックによれば、成形体２において保護層４に密着する一端面（上端面）において第１成形体２１の一端面が占める面積の増大が図られる。なお、略円錐台状の第２成形体２２の上底（上端面）とその中空部２０の上端とが同径に設計されることにより、成形体２において保護層４に密着する一端面（上端面）がほぼ第１成形体２１の一端面により占められる。 According to the electrostatic chuck having such a configuration, an area occupied by one end surface of the first molded body 21 can be increased in one end surface (upper end surface) of the molded body 2 that is in close contact with the protective layer 4. The upper end (upper end surface) of the substantially truncated cone-shaped second molded body 22 and the upper end of the hollow portion 20 are designed to have the same diameter, so that one end surface (in close contact with the protective layer 4) of the molded body 2 ( The upper end surface) is almost occupied by one end surface of the first molded body 21.
このため、第２成形体２２が緻密質セラミックス焼結体からなる場合でも、成形体２の一端面および保護層の密着性の向上が図られる。これは、第２成形体２２が、その軸線方向に対して垂直な方向についてのサイズが、その上端面に接近するにつれて連続的または断続的に減少するように形成されていれば同様である。このため、第２成形体２２が、その上段部が下段部より小径の略二段円筒状である第１実施形態の静電チャックにおいても同様である（図１参照）。 For this reason, even when the 2nd molded object 22 consists of a dense ceramic sintered compact, the adhesiveness of the end surface of the molded object 2 and a protective layer is aimed at. This is the same if the second molded body 22 is formed such that the size in the direction perpendicular to the axial direction decreases continuously or intermittently as it approaches the upper end surface. For this reason, the same applies to the electrostatic chuck of the first embodiment in which the second molded body 22 has a substantially two-stage cylindrical shape whose upper step portion has a smaller diameter than the lower step portion (see FIG. 1).
（構成（第３実施形態））
図３には、本発明の第３実施形態としての静電チャックのうち、当該静電チャックが有する複数の通気経路のうち一の通気経路の周辺部分のみが示されている。本発明の第２実施形態としての静電チャック（図２参照）と共通の構成については同一符号を用いるとともに説明を省略する。第３実施形態の静電チャックは、第２成形体２２が、その下端部から径方向外側に張り出した略円環状のフランジ部２２４を備え、当該フランジ部２２４の上面が第１成形体２１の下端面に対して密着している点で第２実施形態の静電チャックと異なっている。フランジ部２２４は第１成形体２１の下端面の全部のほか一部に対して密着していてもよい。
(Configuration (Third Embodiment))
FIG. 3 shows only the peripheral portion of one ventilation path among the plurality of ventilation paths of the electrostatic chuck of the electrostatic chuck as the third embodiment of the present invention. Constituent elements common to the electrostatic chuck (see FIG. 2) as the second embodiment of the present invention are given the same reference numerals and explanations thereof are omitted. In the electrostatic chuck of the third embodiment, the second molded body 22 includes a substantially annular flange portion 224 projecting radially outward from the lower end portion, and the upper surface of the flange portion 224 is the first molded body 21. It differs from the electrostatic chuck of the second embodiment in that it is in close contact with the lower end surface. The flange portion 224 may be in close contact with the entire lower end surface of the first molded body 21 or a part thereof.
当該構成の静電チャックによれば、マシナブルセラミックスからなる第１成形体２１の、成形体２の中空部２０および保護層４の貫通孔４０により構成される通気経路に対する露出面積の低減が図られる。このため、マシナブルセラミックスが含有する材料が通気経路を通じて基板の周囲に供給されることによる当該基板のコンタミネーションを発生させる事態がより確実に防止または抑制されうる。当該フランジ部２２４は、第１実施形態の第２成形体２２（図１参照）にも設けられてもよい。 According to the electrostatic chuck having such a configuration, the exposed area of the first molded body 21 made of machinable ceramics with respect to the ventilation path constituted by the hollow portion 20 of the molded body 2 and the through hole 40 of the protective layer 4 can be reduced. It is done. For this reason, the situation which the contamination of the said board | substrate due to the material which machinable ceramics contain is supplied to the circumference | surroundings of a board | substrate through a ventilation | gas_flow path can be prevented or suppressed more reliably. The said flange part 224 may be provided also in the 2nd molded object 22 (refer FIG. 1) of 1st Embodiment.
（静電チャックの製造方法）
マシナブルセラミックスにより第１成形体２１が作製される。緻密質または多孔質のセラミックス焼結体により第２成形体２２が作製される。第２成形体２２が第１成形体２１の中空部に対して下側から圧入されることで、成形体２が作製される。
(Electrostatic chuck manufacturing method)
The 1st molded object 21 is produced with machinable ceramics. The second molded body 22 is produced from a dense or porous ceramic sintered body. The 2nd molded object 22 is press-fitted from the lower side with respect to the hollow part of the 1st molded object 21, and the molded object 2 is produced.
続いて、基体１にあらかじめ設けられている、その厚み方向に貫通する連通孔１０に対して、成形体２が上側から圧入される。 Subsequently, the molded body 2 is press-fitted from above into a communication hole 10 provided in advance in the base body 1 and penetrating in the thickness direction.
次に、基体１および成形体２のそれぞれの一端面（図１の上端面）にセラミックス粒子の溶射によりセラミックスコーティング膜を形成し、当該膜の表面を所定厚さまで研削し、滑らかに仕上げ加工することにより保護層４が形成される。そして、保護層４に成形体２の中空部２０まで達する貫通孔４０が設けられることにより、静電チャックが作製される。 Next, a ceramic coating film is formed on one end face (the upper end face in FIG. 1) of each of the base body 1 and the molded body 2 by thermal spraying of ceramic particles, and the surface of the film is ground to a predetermined thickness and finished smoothly. Thereby, the protective layer 4 is formed. And the electrostatic chuck is produced by providing the through-hole 40 which reaches the hollow part 20 of the molded object 2 in the protective layer 4.
なお、セラミックス焼結体により柱状部材が作製された上で第１成形体２１の中空部に対して圧入されることで成形体２の予備部材が作製され、当該予備部材が基体１の連通孔１０に対して圧入された後、予備部材に軸線方向に貫通する孔が形成されることにより静電チャックが作製されてもよい。 In addition, after the columnar member is manufactured by the ceramic sintered body, the preliminary member of the molded body 2 is manufactured by press-fitting into the hollow portion of the first molded body 21, and the preliminary member is connected to the communication hole of the base body 1. After press-fitting with respect to 10, the electrostatic chuck may be manufactured by forming a hole penetrating in the axial direction in the preliminary member.
（実施例）
（実施例１）
本発明の第１実施形態にしたがって、実施例１の静電チャックが作製された（図１参照）。第１成形体２１および第２成形体２２のそれぞれの上端面の高さ位置が同一であり、第１成形体２１および第２成形体２２のそれぞれの下端面の高さ位置が同一になるように成形体２が作製された。第２成形体２２の外側面が、軸線方向について第１成形体２１の内側面の全部に対して全周にわたり密着している。
(Example)
Example 1
According to the first embodiment of the present invention, the electrostatic chuck of Example 1 was manufactured (see FIG. 1). The height positions of the upper end surfaces of the first molded body 21 and the second molded body 22 are the same, and the height positions of the lower end surfaces of the first molded body 21 and the second molded body 22 are the same. A molded body 2 was produced. The outer surface of the second molded body 22 is in close contact with the entire inner surface of the first molded body 21 in the axial direction over the entire circumference.
第１成形体２１は、マシナブルセラミックスの１つであるマコール（マトリックス：硼珪酸ガラス（ＳｉＯ2：５０％、Ａｌ2Ｏ3：２０％、Ｂ2Ｏ3：１３％、ＭｇＯ：８％、Ｒ2Ｏ：９％） フィラー：ＺｒＯ2、ＫＭｇ3ＡｌＳｉ3Ｏ10Ｆ2（フッ素金雲母））により作製された。第１成形体２１は、上部が大径の略二段円柱状（上段内径３［ｍｍ］、下段内径４［ｍｍ］）の中空部を有する、上部が小径の高さ１０［ｍｍ］の略二段円筒状（上段外径１０［ｍｍ］、下段外径８［ｍｍ］）に形成された。 The first molded body 21 is one of machinable ceramics (macol (matrix: borosilicate glass (SiO 2 : 50%, Al 2 O 3 : 20%, B 2 O 3 : 13%), MgO: 8%, R 2 O: 9%) Filler: ZrO 2 , KMg 3 AlSi 3 O 10 F 2 (fluorine phlogopite))). The first molded body 21 has a hollow portion having an approximately two-stage cylindrical shape (upper inner diameter 3 [mm], lower inner diameter 4 [mm]) with a large upper portion, and an upper portion with a small diameter and a height of 10 [mm]. It was formed in a two-stage cylindrical shape (upper outer diameter 10 [mm], lower outer diameter 8 [mm]).
第２成形体２２は、純度９９．５％のＡｌ２Ｏ３焼結体により作製された。当該焼結体（多孔質）の気孔径分布範囲は２〜２０［μｍ］であり、気孔率は、１５％であった。第２成形体２２は、上部が小径の略二段円柱状（上段内径０．２［ｍｍ］、下段内径１．０［ｍｍ］）の中空部を有する、上部が小径の高さ１０［ｍｍ］の略二段円筒状（上段外径３［ｍｍ］、下段外径４［ｍｍ］）に形成された。第１成形体２１の内側面において第２成形体２２との密着部分の面積比率（第１成形体２１の軸線方向長さに対する、第２成形体２２の軸線方向長さの比率）は１．０に調節された。成形体２の上端面における、第２成形体２２の上端面の面積占有比率が０．０９に調節された。成形体２の下端面における、第２成形体２２の下端面の面積占有比率が０．２５に調節された。 The second molded body 22 was made of an Al 2 O 3 sintered body having a purity of 99.5%. The pore size distribution range of the sintered body (porous) was 2 to 20 [μm], and the porosity was 15%. The second molded body 22 has a hollow portion having an approximately two-stage cylindrical shape (an upper inner diameter of 0.2 [mm] and a lower inner diameter of 1.0 [mm]) having a small diameter at the upper portion and a height of 10 [mm at a small diameter at the upper portion. ] In a substantially two-stage cylindrical shape (upper outer diameter 3 [mm], lower outer diameter 4 [mm]). The area ratio of the close contact portion with the second molded body 22 on the inner surface of the first molded body 21 (ratio of the axial length of the second molded body 22 to the axial length of the first molded body 21) is 1. Adjusted to zero. The area occupation ratio of the upper end surface of the second molded body 22 in the upper end surface of the molded body 2 was adjusted to 0.09. The area occupation ratio of the lower end surface of the second molded body 22 in the lower end surface of the molded body 2 was adjusted to 0.25.
保護層４は、Ａｌ２Ｏ３溶射膜により作製され、その厚さが２５０［μｍ］になるように形成された。 The protective layer 4 was made of an Al 2 O 3 sprayed film and formed so as to have a thickness of 250 [μm].
（実施例２）
第２成形体２２が純度９８％のＡｌ２Ｏ３焼結体により作製されたほかは実施例１と同様の条件にしたがって実施例２の静電チャックが作製された。
(Example 2)
An electrostatic chuck of Example 2 was produced according to the same conditions as in Example 1 except that the second molded body 22 was made of an Al 2 O 3 sintered body having a purity of 98%.
（実施例３）
第２成形体２２が純度９５％のＡｌ２Ｏ３焼結体により作製されたほかは実施例１と同様の条件にしたがって実施例３の静電チャックが作製された。
(Example 3)
An electrostatic chuck of Example 3 was produced according to the same conditions as in Example 1 except that the second molded body 22 was made of an Al 2 O 3 sintered body having a purity of 95%.
（実施例４）
第２成形体２２の下端面が第１成形体２１の下端面よりも高い位置にあって、第２成形体２２の外側面が、軸線方向について第１成形体２１の内側面に対して部分的に、かつ、全周にわたり密着するように成形体２が作製された。第１成形体２１の内側面において第２成形体２２との密着部分の面積比率は０．９に調節された。そのほかは実施例１と同様の条件にしたがって実施例４の静電チャックが作製された。
Example 4
The lower end surface of the second molded body 22 is higher than the lower end surface of the first molded body 21, and the outer surface of the second molded body 22 is a part of the inner surface of the first molded body 21 in the axial direction. In addition, the molded body 2 was produced so as to be in close contact with the entire circumference. The area ratio of the close contact portion with the second molded body 22 on the inner surface of the first molded body 21 was adjusted to 0.9. Other than that, the electrostatic chuck of Example 4 was produced according to the same conditions as in Example 1.
（実施例５）
第２成形体２２の軸線方向長さ（高さ）第１成形体２１の内側面における第２成形体２２との密着部分の面積比率が０．７に調節されたほかは実施例４と同様の条件にしたがって実施例５の静電チャックが作製された。
(Example 5)
The length (height) of the second molded body 22 in the axial direction The same as in Example 4 except that the area ratio of the close contact portion with the second molded body 22 on the inner surface of the first molded body 21 is adjusted to 0.7. The electrostatic chuck of Example 5 was manufactured according to the conditions described above.
（実施例６）
第１成形体２１の内側面における第２成形体２２との密着部分の面積比率が０．５に調節されたほかは実施例４と同様の条件にしたがって実施例６の静電チャックが作製された。
(Example 6)
The electrostatic chuck of Example 6 was manufactured according to the same conditions as in Example 4 except that the area ratio of the close contact portion with the second molded body 22 on the inner surface of the first molded body 21 was adjusted to 0.5. It was.
（実施例７）
本発明の第２実施形態にしたがって、第１成形体２１は、上底を上端面とする略円錐台状（上端内径２［ｍｍ］、下端内径４［ｍｍ］）の中空部を有する、上部が大径の略二段円筒状（上段外径１０［ｍｍ］、下段外径８［ｍｍ］）に形成された。第２成形体２２は、上部が小径の略二段円筒状（上段外径２［ｍｍ］、下段外径４［ｍｍ］）の中空部を有する、上底を上端面とする略円錐台状（上端内径０．２［ｍｍ］、下端内径１［ｍｍ］）に形成された（図２参照）。
(Example 7)
In accordance with the second embodiment of the present invention, the first molded body 21 has a hollow portion having a substantially truncated cone shape (upper end inner diameter 2 [mm], lower end inner diameter 4 [mm]) having an upper bottom as an upper end surface. Was formed into a large two-stage cylindrical shape (upper outer diameter 10 [mm], lower outer diameter 8 [mm]). The second molded body 22 has a hollow portion having a substantially two-stage cylindrical shape (upper outer diameter 2 [mm], lower outer diameter 4 [mm]) having a small upper portion, and a substantially truncated cone shape having an upper bottom as an upper end surface. (Upper end inner diameter 0.2 [mm], lower end inner diameter 1 [mm]) (see FIG. 2).
成形体２の上端面における、第２成形体２２の上端面の面積占有比率が０．０３（実施例１より低い）に調節された。成形体２の下端面における、第２成形体２２の下端面の面積占有比率が０．２５に調節された。そのほかは実施例１と同様の条件にしたがって実施例７の静電チャックが作製された。 The area occupation ratio of the upper end surface of the second molded body 22 in the upper end surface of the molded body 2 was adjusted to 0.03 (lower than Example 1). The area occupation ratio of the lower end surface of the second molded body 22 in the lower end surface of the molded body 2 was adjusted to 0.25. Other than that, an electrostatic chuck of Example 7 was fabricated according to the same conditions as in Example 1.
（実施例８）
本発明の第３実施形態にしたがって、第２成形体２２には、上底を上端面とする略円錐台状であって、その下端部から径方向外側に張り出しているフランジ部２２４（内径１［ｍｍ］、外径８［ｍｍ］）が形成された（図３参照）。そのほかは実施例７と同様の条件にしたがって実施例８の静電チャックが作製された。
(Example 8)
According to the third embodiment of the present invention, the second molded body 22 has a substantially truncated cone shape having an upper bottom as an upper end surface and a flange portion 224 (inner diameter 1) projecting radially outward from the lower end portion thereof. [Mm], outer diameter 8 [mm]) was formed (see FIG. 3). Other than that, an electrostatic chuck of Example 8 was fabricated according to the same conditions as in Example 7.
（実施例９）
第１成形体２１がマシナブルセラミックスの１つであるホトベールにより作製され、第２成形体２２が純度９９．５％の石英ガラスにより作製された。そのほかは実施例１と同様の条件にしたがって実施例９の静電チャックが作製された。
Example 9
The 1st molded object 21 was produced with the photo veil which is one of machinable ceramics, and the 2nd molded object 22 was produced with the quartz glass of purity 99.5%. Otherwise, an electrostatic chuck of Example 9 was produced according to the same conditions as in Example 1.
（実施例１０）
第１成形体２１がマシナブルセラミックスの１つであるホトベールにより作製され、第２成形体２２が純度９９．９％の石英ガラスにより作製された。そのほかは実施例１と同様の条件にしたがって実施例１０の静電チャックが作製された。
(Example 10)
The 1st molded object 21 was produced with the photo veil which is one of the machinable ceramics, and the 2nd molded object 22 was produced with the quartz glass of purity 99.9%. Otherwise, the electrostatic chuck of Example 10 was manufactured according to the same conditions as in Example 1.
（実施例１１）
第１成形体２１は、上部が大径の略二段円柱状（上段内径３．５［ｍｍ］、下段内径４［ｍｍ］）の中空部を有する、上部が小径の高さ１０［ｍｍ］の略二段円筒状（上段外径１０［ｍｍ］、下段外径８［ｍｍ］）に形成された。
(Example 11)
The first molded body 21 has a hollow portion having a large two-stage cylindrical shape (upper inner diameter: 3.5 [mm], lower inner diameter: 4 [mm]) at the upper part, and the upper part has a small diameter of 10 [mm]. In a two-stage cylindrical shape (upper outer diameter 10 [mm], lower outer diameter 8 [mm]).
成形体２の上端面における、第２成形体２２の上端面の面積占有比率が０．１３（＞０．１）に調節された。そのほかは実施例１と同様の条件にしたがって実施例１１の静電チャックが作製された。 The area occupation ratio of the upper end surface of the second molded body 22 in the upper end surface of the molded body 2 was adjusted to 0.13 (> 0.1). Otherwise, the electrostatic chuck of Example 11 was fabricated according to the same conditions as in Example 1.
（実施例１２）
第１成形体２１は、上部が大径の略二段円柱状（上段内径３．０［ｍｍ］、下段内径３．５［ｍｍ］）の中空部を有する、上部が小径の高さ１０［ｍｍ］の略二段円筒状（上段外径１０［ｍｍ］、下段外径８［ｍｍ］）に形成された。
(Example 12)
The first molded body 21 has a hollow portion having an upper part with a large diameter and a substantially two-stage cylindrical shape (upper inner diameter 3.0 [mm], lower inner diameter 3.5 [mm]), and the upper part has a small diameter of 10 [ mm] in a substantially two-stage cylindrical shape (upper outer diameter 10 [mm], lower outer diameter 8 [mm]).
成形体２の下端面における、第２成形体２２の下端面の面積占有比率が０．２１（＜０．２５）に調節された。そのほかは実施例１と同様の条件にしたがって実施例１２の静電チャックが作製された。 The area occupation ratio of the lower end surface of the second molded body 22 in the lower end surface of the molded body 2 was adjusted to 0.21 (<0.25). Other than that, an electrostatic chuck of Example 12 was fabricated according to the same conditions as in Example 1.
各実施例の静電チャックについて、第１成形体２１および第２成形体２２の材料、第１成形体２１の内側面における第２成形体２２との密着部分の占有率、成形体２の上端面における第２成形体２の上端面の面積占有比率、成形体２の下端面における第２成形体２の下端面の面積占有比率および第１成形体２１の下端面の第２成形体２２（フランジ部２２４）による被覆の有無のほか、基板の汚染度の測定結果、熱サイクル試験結果が表１にまとめて示されている。静電チャックにより吸着保持されている基板に対して通気経路を通じてＨｅガスが１５［ｍｉｎ］にわたり供給された後、ＩＣＰ−ＭＳ分析によるＮａの当該基板に対する付着量が当該基板の汚染度として測定された。熱サイクル試験は、静電チャックに対して５０〜２００［℃］の熱サイクルが３０回繰り返された後において、保護膜４における通気経路付近でのクラック発生有無が観測されることにより行われた。 Regarding the electrostatic chuck of each example, the material of the first molded body 21 and the second molded body 22, the occupation ratio of the close contact portion with the second molded body 22 on the inner surface of the first molded body 21, the top of the molded body 2 The area occupation ratio of the upper end surface of the second molded body 2 at the end surface, the area occupation ratio of the lower end surface of the second molded body 2 at the lower end surface of the molded body 2, and the second molded body 22 at the lower end surface of the first molded body 21 ( In addition to the presence or absence of coating by the flange portion 224), the measurement results of the contamination degree of the substrate and the thermal cycle test results are summarized in Table 1. After He gas is supplied to the substrate held by suction by the electrostatic chuck through the ventilation path for 15 [min], the adhesion amount of Na to the substrate by ICP-MS analysis is measured as the contamination degree of the substrate. It was. The thermal cycle test was performed by observing the presence or absence of cracks in the vicinity of the ventilation path in the protective film 4 after the thermal cycle of 50 to 200 [° C.] was repeated 30 times for the electrostatic chuck. .
表１から次のことがわかる。実施例１〜１２の静電チャックによれば、汚染度が１０10［ａｔｍ／ｃｍ2］のオーダーまたは２×１０11以下であり、かつ、保護層４にクラックが発生していない。第２成形体２２を構成するセラミックス（Ａｌ2Ｏ3）の純度が高いほど、汚染度が低い（実施例１〜３参照）。第１成形体２１の内側面における第２成形体２２との密着部分の面積占有率が高いほど汚染度が低い（実施例１、４〜６参照）。第１成形体２１の内側面に加えて下端面が第２成形体２２により被覆されている実施例８の静電チャックによれば、第１成形体２１の内側面のみが第２成形体２２により被覆されている実施例１〜７のそれぞれの静電チャックと比較して基板の汚染度が低い。 Table 1 shows the following. According to the electrostatic chucks of Examples 1 to 12, the degree of contamination is on the order of 10 10 [atm / cm 2 ] or 2 × 10 11 or less, and no crack is generated in the protective layer 4. The higher the purity of the ceramic (Al 2 O 3 ) constituting the second compact 22 is, the lower the degree of contamination is (see Examples 1 to 3). The higher the area occupancy ratio of the close contact portion with the second molded body 22 on the inner surface of the first molded body 21, the lower the contamination degree (see Examples 1, 4 to 6). According to the electrostatic chuck of Example 8 in which the lower end surface is covered with the second molded body 22 in addition to the inner side surface of the first molded body 21, only the inner surface of the first molded body 21 is the second molded body 22. Compared with each of the electrostatic chucks of Examples 1 to 7 coated with the substrate, the degree of contamination of the substrate is low.
成形体２の上端面における第２成形体２２の上端面の面積占有比率が０．１を超えている実施例１１の静電チャックは、当該比率が０．１以下である実施例１と比較して基板の汚染度が高い。成形体２の下端面における第２成形体２２の下端面の面積占有比率が０．２５未満である実施例１２の静電チャックは、当該比率が０．２５以上である実施例１、実施例４〜５と比較して基板の汚染度が高い。 The electrostatic chuck of Example 11 in which the area occupation ratio of the upper end surface of the second molded body 22 in the upper end surface of the molded body 2 exceeds 0.1 is compared with Example 1 in which the ratio is 0.1 or less. And the degree of contamination of the substrate is high. The electrostatic chuck of Example 12 in which the area occupying ratio of the lower end surface of the second molded body 22 in the lower end surface of the molded body 2 is less than 0.25 is the Example 1 and Example in which the ratio is 0.25 or more. Compared with 4-5, the contamination degree of a board | substrate is high.
（比較例）
（比較例１）
第２成形体２２が省略され、成形体２が第１成形体２１によってのみ構成されたほかは実施例１と同様の条件にしたがって比較例１の静電チャックが作製された。
(Comparative example)
(Comparative Example 1)
The electrostatic chuck of Comparative Example 1 was manufactured according to the same conditions as in Example 1 except that the second molded body 22 was omitted and the molded body 2 was constituted only by the first molded body 21.
（参考例）
（参考例１）
第２成形体２２が純度９４．５％のＡｌ２Ｏ３焼結体により作製されたほかは実施例１と同様の条件にしたがって参考例１の静電チャックが作製された。
(Reference example)
(Reference Example 1)
An electrostatic chuck of Reference Example 1 was produced according to the same conditions as in Example 1 except that the second molded body 22 was made of an Al 2 O 3 sintered body having a purity of 94.5%.
（参考例２）
上部外径が５［ｍｍ］、下段外径５．５［ｍｍ］になるように第２成形体２２が形成されることで、成形体２の上端面における第２成形体２の上端面の占有比率が０．２５、下段面の占有比率が０．４７に設計されたほかは実施例１と同様の条件にしたがって参考例２の静電チャックが作製された。
(Reference Example 2)
By forming the second molded body 22 so that the upper outer diameter is 5 [mm] and the lower outer diameter is 5.5 [mm], the upper end surface of the second molded body 2 at the upper end surface of the molded body 2 is formed. An electrostatic chuck of Reference Example 2 was manufactured according to the same conditions as in Example 1 except that the occupation ratio was designed to be 0.25 and the occupation ratio of the lower surface was 0.47.
（参考例３）
第１成形体２１の材料として、マシナブルセラミックスの１つであるホトベールII（マトリックス：窒化アルミニウムＡｌＮ、フィラー：窒化ホウ素ＢＮ、熱膨張率１．４ｐｐｍを使用したほかは、実施例１と同様の条件にしたがって参考例３の静電チャックが作製された。
(Reference Example 3)
As the material of the first molded body 21, Photoveel II (matrix: aluminum nitride AlN, filler: boron nitride BN, thermal expansion coefficient 1.4ppm), which is one of machinable ceramics, was used. The electrostatic chuck of Reference Example 3 was produced according to the conditions.
比較例および各参考例の静電チャックについて、第１成形体２１および第２成形体２２の材料、第１成形体２１の内側面における第２成形体２２との密着部分の占有率、第１成形体２１の下端面の第２成形体２２（フランジ部２２４）による被覆の有無、成形体２の上端面における第２成形体２の上端面の面積占有比率のほか、基板の汚染度の測定結果、熱サイクル試験結果が表２にまとめて示されている。 For the electrostatic chucks of the comparative example and each reference example, the material of the first molded body 21 and the second molded body 22, the occupation ratio of the contact portion with the second molded body 22 on the inner surface of the first molded body 21, the first Measurement of the degree of contamination of the substrate in addition to the presence / absence of covering of the lower end surface of the molded body 21 with the second molded body 22 (flange portion 224), the area occupation ratio of the upper end surface of the second molded body 2 to the upper end surface of the molded body 2 Results and thermal cycle test results are summarized in Table 2.
表２から次のことがわかる。第２成形体２２を構成するセラミックス（Ａｌ2Ｏ3）の純度が比較的低い参考例１の静電チャックによれば、当該純度が比較的高い実施例１〜３の静電チャックと比較して汚染度が高い。第１成形体２１の内側面が第２成形体２２により被覆されていない比較例１の静電チャックによれば、第１成形体２１の内側面が第２成形体２２により被覆されている実施例１〜１２の静電チャックと比較して汚染度が著しく高い。成形体２の上端面における第２成形体２２の上端面の占有比率が比較的高い参考例２の静電チャックによれば、当該比率が比較的低い実施例１〜１２のそれぞれの静電チャックと比較して基板の汚染度が高い。参考例３の静電チャックによれば熱膨張率が溶射膜からなる保護層４と比較し小さいマシナブルセラミックス（ホトベールＩＩ）により第１成形体２１が構成されているため、保護層４にクラックが発生している。 Table 2 shows the following. According to the electrostatic chuck of Reference Example 1 in which the purity of the ceramic (Al 2 O 3 ) constituting the second molded body 22 is relatively low, compared with the electrostatic chucks of Examples 1 to 3 in which the purity is relatively high. High pollution level. According to the electrostatic chuck of Comparative Example 1 in which the inner surface of the first molded body 21 is not covered with the second molded body 22, the inner surface of the first molded body 21 is covered with the second molded body 22. Compared with the electrostatic chucks of Examples 1 to 12, the degree of contamination is extremely high. According to the electrostatic chuck of Reference Example 2 in which the occupation ratio of the upper end surface of the second molded body 22 to the upper end surface of the molded body 2 is relatively high, each of the electrostatic chucks of Examples 1 to 12 has a relatively low ratio. Compared with, the degree of contamination of the substrate is high. According to the electrostatic chuck of Reference Example 3, the first molded body 21 is composed of machinable ceramics (Photoveel II) having a smaller thermal expansion coefficient than the protective layer 4 made of a sprayed film. Has occurred.
１‥基体、２‥成形体、４‥保護層、１０‥連通孔、２０‥成形体の中空部、２１‥第１成形体、２２‥第２成形体、４０‥貫通孔。 DESCRIPTION OF SYMBOLS 1 ... Base | substrate, 2 ... Molded object, 4 ... Protective layer, 10 ... Communication hole, 20 ... Hollow part of molded object, 21 ... 1st molded object, 22 ... 2nd molded object, 40 ... Through-hole.
Claims (8)
前記連通孔のうち前記基体の上端面から下方に延在する部分の側面に対して側面が全周にわたって密着している筒状の絶縁性の成形体と、
前記基体のおよび前記成形体のそれぞれの上端面を被覆し、前記成形体の中空部に連通する貫通孔を有するセラミックスコーティング膜からなる保護層と、を備えている静電チャックであって、
前記成形体が、筒状の絶縁性マシナブルセラミックスからなる第１成形体と、前記第１成形体の内側面に対して全周にわたり密着している、当該マシナブルセラミックスとは異なる筒状の絶縁性セラミックスからなる第２成形体と、により構成されていることを特徴とする静電チャック。 A conductive substrate having a communication hole having a portion extending downward from the upper end surface;
A cylindrical insulating molded body whose side surface is in close contact with the side surface of the portion extending downward from the upper end surface of the base body in the communication hole;
A protective layer made of a ceramic coating film covering a top end surface of each of the base body and the molded body and having a through-hole communicating with a hollow portion of the molded body,
The molded body is in a cylindrical shape different from the machinable ceramic, which is in close contact with the first molded body made of a cylindrical insulating machinable ceramic and the inner surface of the first molded body. An electrostatic chuck comprising: a second molded body made of an insulating ceramic.
前記第２成形体が、前記成形体の軸線方向全長にわたって前記第１成形体の内側面に対して全周にわたり密着していることを特徴とする静電チャック。 The electrostatic chuck according to claim 1,
The electrostatic chuck, wherein the second compact is in close contact with the inner surface of the first compact over the entire length in the axial direction of the compact.
前記成形体の上端面における前記第２成形体の上端面の占有面積比率が０〜０．１０であることを特徴とする静電チャック。 The electrostatic chuck according to claim 1 or 2,
The electrostatic chuck characterized in that an occupied area ratio of the upper end surface of the second molded body to the upper end surface of the molded body is 0 to 0.10.
前記第２成形体が、前記成形体の下端面の少なくとの一部に対して密着する部分を有するように形成されていることを特徴とする静電チャック。 In the electrostatic chuck according to any one of claims 1 to 3,
The electrostatic chuck, wherein the second molded body is formed to have a portion that is in close contact with at least a part of a lower end surface of the molded body.
前記成形体の下端面における前記第２成形体の下端面の占有面積比率が０．２５〜１であることを特徴とする静電チャック。 In the electrostatic chuck according to any one of claims 1 to 4,
The electrostatic chuck characterized in that the ratio of the occupied area of the lower end surface of the second molded body to the lower end surface of the molded body is 0.25 to 1.
前記第２成形体が、その上端面の面積が下端面の面積よりも小さくなるように形成されていることを特徴とする静電チャック。 In the electrostatic chuck according to any one of claims 1 to 5,
The electrostatic chuck, wherein the second molded body is formed such that an area of an upper end surface thereof is smaller than an area of a lower end surface thereof.
前記第１成形体が、前記保護層との熱膨張係数の偏差が−３［ｐｐｍ］〜＋３［ｐｐｍ］の範囲内であるマシナブルセラミックスからなることを特徴とする静電チャック。 In the electrostatic chuck according to any one of claims 1 to 6,
The electrostatic chuck characterized in that the first molded body is made of machinable ceramics having a deviation of thermal expansion coefficient from the protective layer within a range of -3 [ppm] to +3 [ppm].
金属からなる基体において上端面から下方に延在する部分を有するように形成されている連通孔に対して前記成形体をその上端面が露出するように圧入し、前記連通孔のうち前記基体の上端面から下方に延在する部分の側面に対して全周にわたって前記成形体の外側面を密着させる工程と、
前記基体および前記成形体のそれぞれの上端面に、溶射によりセラミックコーティング膜からなる保護層を形成する工程と、
前記第２成形体が柱状である場合、前記第２成形体にその軸線方向に貫通し、前記保護層の貫通孔に連通する中空部を形成する工程と、
前記保護層をその厚み方向に貫通し、前記第２成形体の中空部に連通する貫通孔を形成する工程と、を含むことを特徴とする静電チャックの製造方法。 A second molded body made of a cylindrical or columnar insulating ceramic sintered body different from the machinable ceramic is press-fitted into a hollow portion of the first molded body made of a cylindrical insulating machinable ceramic, and the first Producing a molded body composed of the first molded body and the second molded body, the outer surface of which is in close contact with the inner surface of the molded body;
The formed body is press-fitted into a communicating hole formed so as to have a portion extending downward from the upper end surface in a base made of metal so that the upper end surface is exposed, A step of closely contacting the outer surface of the molded body over the entire circumference with respect to the side surface of the portion extending downward from the upper end surface;
Forming a protective layer made of a ceramic coating film by thermal spraying on the upper end surface of each of the base body and the molded body;
When the second molded body is columnar, a process of forming a hollow portion penetrating in the axial direction in the second molded body and communicating with the through hole of the protective layer;
Forming a through hole that penetrates the protective layer in the thickness direction and communicates with a hollow portion of the second molded body.
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| CN110943023A (en) * | 2018-09-25 | 2020-03-31 | 北京华卓精科科技股份有限公司 | Anti-blocking device for functional hole of electrostatic chuck |
| JP7127737B2 (en) | 2020-03-31 | 2022-08-30 | Toto株式会社 | Sanitary equipment parts |
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| JP5449750B2 (en) * | 2008-11-19 | 2014-03-19 | 株式会社日本セラテック | Electrostatic chuck and manufacturing method thereof |
| JP3154629U (en) * | 2009-08-04 | 2009-10-22 | 日本碍子株式会社 | Electrostatic chuck |
| JP6017328B2 (en) * | 2013-01-22 | 2016-10-26 | 東京エレクトロン株式会社 | Mounting table and plasma processing apparatus |
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| CN110943023A (en) * | 2018-09-25 | 2020-03-31 | 北京华卓精科科技股份有限公司 | Anti-blocking device for functional hole of electrostatic chuck |
| CN110943023B (en) * | 2018-09-25 | 2022-04-26 | 北京华卓精科科技股份有限公司 | Anti-blocking device for functional hole of electrostatic chuck |
| JP7127737B2 (en) | 2020-03-31 | 2022-08-30 | Toto株式会社 | Sanitary equipment parts |
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