JP6195325B2 - Pressure sensing semiconductor device - Google Patents

Description

  The present invention relates to a pressure sensing semiconductor device that detects an externally applied pressure as a change in capacitance.

  As an example of a position input device used as an input device for a personal computer or the like, for example, a position indicator having a pen-like shape and having a writing pressure detection unit, and a pointing operation using the position indicator And a position detection device having an input surface for inputting characters, drawings, and the like.

  For example, a variable capacitor as described in Patent Document 1 (Japanese Patent Laid-Open No. 4-96212) is used for the writing pressure detection unit of the position indicator. The variable capacitor described in Patent Document 1 includes, as a mechanical structural component, a first electrode attached to one surface of a dielectric, and another surface side facing the one surface of the dielectric. A flexible second electrode disposed on the substrate. The variable capacitor includes a spacer means for separating the second electrode and the other surface of the dielectric by a small distance except for a portion thereof, and the second electrode and the dielectric. It has parts that apply relative pressure or displacement. When the pen pressure is applied to the pen-shaped position indicator, the flexible second electrode is displaced to change the capacity.

  Therefore, the variable capacitor of the position indicator of Patent Document 1 has a large number of parts and is a mechanical part, so that the configuration of the position indicator is complicated.

  On the other hand, for example, Patent Literature 2 (Japanese Patent Laid-Open No. 11-284204), Patent Literature 3 (Japanese Patent Laid-Open No. 2001-83030), Patent Literature 4 (Japanese Patent Laid-Open No. 2004-309282), Patent Literature 5 (US Publication). As disclosed in US 2002/0194919), a capacitive pressure sensor manufactured by a semiconductor microfabrication technique represented by a MEMS (Micro Electro Mechanical System) technique or the like has been proposed.

  The pressure sensor disclosed in Patent Documents 2 to 5 includes a first electrode and a semiconductor structure provided with a second electrode disposed to face the first electrode with a predetermined distance therebetween. And the distance between the first electrode and the second electrode changes according to the pressure applied to the first electrode, whereby the first electrode and the second electrode Since the capacitance formed between them changes, the pressure can be detected as a change in the capacitance.

JP-A-4-96212 JP-A-11-284204 JP 2001-83030 A JP 2004-309282 A US Publication No. US2002 / 0194919

  As described in Patent Document 1, a variable capacitor composed of a plurality of mechanical structural parts in order to make the capacitance variable by an external pressing force is used as the MEMS described in Patent Documents 2 to 5. If it can be replaced with a pressure sensor constructed by technology, the number of parts can be reduced, and mechanical parts for assembly can be eliminated, which simplifies the configuration and contributes to improved reliability and cost reduction. To do.

  By the way, as a pressure sensor for detecting a pressing force from the outside, such as for detecting the writing pressure of the position indicator described in Patent Document 1 described above, the pressure level such as sound pressure is not comparable. In order to correspond, it is necessary to provide a structure having pressure resistance that can withstand the pressure. In addition, it is desirable to provide a structure that can reliably and efficiently sense pressure from a specific direction, such as the pressure in the axial direction of a position indicator having a pen shape.

  However, the pressure sensors of Patent Document 2 and Patent Document 3 sense the pressure of a fluid such as water or air, and cannot be applied for detecting the writing pressure of the position indicator described above.

  Moreover, the pressure sensor of patent document 4 and patent document 5 changes the distance of a 1st electrode and a 2nd electrode because the semiconductor substrate which consists of a ceramic layer or a silicon | silicone etc. receives a pressure, for example, and bends. The capacitance changes. However, these Patent Documents 4 and 5 only describe the behavior when pressure is directly applied to the ceramic layer and the semiconductor substrate. Therefore, there is no disclosure of a structure for reliably and efficiently sensing pressure resistance and pressure required for application. Further, no mention is made of impact resistance against a pressure unexpectedly applied to the first electrode or the second electrode.

  In view of the above points, the present invention has pressure resistance against pressure caused by pressing force applied from the outside, and can reliably and efficiently sense the pressure, and is applied from the outside. An object of the present invention is to provide a pressure sensing semiconductor device having a structure in consideration of impact resistance against an unexpected pressing force.

In order to solve the above problems, the present invention provides:
A first electrode; and a second electrode disposed to face the first electrode with a predetermined distance therebetween, and the first electrode according to a pressure applied to the first electrode The capacitance between the first electrode and the second electrode is changed by displacement of the first electrode, and the first electrode and the second electrode are accommodated in a package member. Pressure sensing semiconductor device comprising:
The first electrode is displaced by applying a pressure applied to the core projecting from one end of the position indicator housing to the first electrode, and
The change in the capacitance due to the displacement of the first electrode is based on a change in the distance between the first electrode and the second electrode,
An elastic member is disposed in contact with the surface of the first electrode opposite to the side opposite to the second electrode, and the pressure applied to the core is the elastic member. Is configured to be transmitted to the first electrode via
The package member is formed with a recess so as to open the elastic member disposed on the surface of the first electrode opposite to the side facing the second electrode. ,
A pressure sensing semiconductor device is provided, wherein pressure applied to the core via the recess is transmitted to the first electrode via the elastic member.

  In the pressure sensing semiconductor device of the present invention having the above-described configuration, the first electrode and the second electrode disposed to face the first electrode with a predetermined distance are provided on the package member. It is housed and configured. Then, the distance between the first electrode and the second electrode changes as the first electrode is displaced according to the pressure applied to the core projecting from one end of the casing of the position indicator. This changes the capacitance between the first electrode and the second electrode.

  In the present invention, the elastic member is disposed on the surface of the first electrode opposite to the side facing the second electrode. Further, the package member is formed with a recess so as to open the elastic member disposed on the surface of the first electrode opposite to the side facing the second electrode. The pressure applied to the core through the recess is transmitted to the first electrode through the elastic member.

  Therefore, the pressure applied to the core body is not directly transmitted to the first electrode, but is always transmitted via the elastic member disposed on the one surface side of the first electrode. In addition to having pressure resistance against pressure applied from the body, it also has impact resistance against shock pressure applied unexpectedly.

  And since the 1st electrode receives a pressure via an elastic member, it can be constituted so that the pressure from the outside can be appropriately transmitted to the 1st electrode by the elastic member having a predetermined elasticity. The pressure sensing semiconductor device can sense pressure reliably and efficiently.

  In the pressure sensing semiconductor device according to the present invention, the elastic member is disposed on the surface of the first electrode facing the second electrode opposite to the side facing the second electrode. The pressure applied to the core body through the provided recess is transmitted to the first electrode through this elastic member. Therefore, according to the pressure sensing semiconductor device of the present invention, the pressure sensing semiconductor device has pressure resistance against the pressure applied to the core body, can reliably and efficiently sense the pressure, and has an unexpected impact pressure. There is a remarkable effect of providing impact resistance against

It is a figure which shows the basic structural example of 1st Embodiment of the pressure sensing semiconductor device by this invention. It is a figure which shows the structural example of the pressure sensing part used for the pressure sensing semiconductor device by this invention. It is a figure which shows the example of a characteristic of the pressure sensing part used for the pressure sensing semiconductor device by this invention. It is a figure which shows the other structural example of the pressure sensing part used for the pressure sensing semiconductor device by this invention. It is a figure which shows the example of a characteristic of the pressure sensing part used for the pressure sensing semiconductor device of the example of FIG. It is a figure which shows the modification of 1st Embodiment of the pressure sensing semiconductor device by this invention. It is a figure which shows the other modification of 1st Embodiment of the pressure sensing semiconductor device by this invention. It is a figure which shows the other modification of 1st Embodiment of the pressure sensing semiconductor device by this invention. It is a figure which shows the structural example of 2nd Embodiment of the pressure sensing semiconductor device by this invention. It is a figure for demonstrating the example of a structure of 3rd Embodiment of the pressure sensing semiconductor device by this invention. It is a figure for demonstrating the other structural example of 3rd Embodiment of the pressure sensing semiconductor device by this invention. It is a figure for demonstrating the example of a structure of 4th Embodiment of the pressure sensing semiconductor device by this invention. It is a figure for demonstrating the example of a structure of 5th Embodiment of the pressure sensing semiconductor device by this invention. It is a figure for demonstrating the structural example of 6th Embodiment of the pressure sensing semiconductor device by this invention. It is a figure for demonstrating the structural example of 7th Embodiment of the pressure sensing semiconductor device by this invention. It is a figure for demonstrating the position detection apparatus to which embodiment of the pressure sensing semiconductor device by this invention is applied. It is a figure for demonstrating the position indicator to which embodiment of the pressure sensing semiconductor device by this invention is applied. It is a circuit diagram of an example of a position detection and writing pressure detection circuit of a position detection device to which an embodiment of a pressure sensing semiconductor device according to the present invention is applied. It is a figure for demonstrating the modification of the pressure sensing semiconductor device by this invention.

[First Embodiment]
FIG. 1 is a diagram for explaining a configuration of a first embodiment of a pressure sensing semiconductor device according to the present invention, and FIG. 1A is a perspective view of a pressure sensing semiconductor device 100 of the first embodiment. FIG. 1B is a longitudinal sectional view including the line AA in FIG. 1A, and FIG. 1C is the pressure sensing semiconductor device 100 according to the first embodiment attached to the printed wiring board 200. It is a figure which shows the state at the time.

  In the pressure sensing semiconductor device 100 according to the first embodiment, for example, a pressure sensing chip 10 configured as a semiconductor chip manufactured by MEMS technology is sealed in a box-shaped package 20 of, for example, a cube or a rectangular parallelepiped. (See FIGS. 1A and 1B). The pressure sensing chip 10 is an example of a pressure sensing unit.

  The pressure sensing chip 10 detects an applied pressure as a change in capacitance, and in this example, has a configuration as shown in FIG. FIG. 2B is a view of the pressure sensing chip 10 of this example as viewed from the surface 1a receiving the pressure P, and FIG. 2A is a vertical cross-sectional view taken along the line BB in FIG. 2B. FIG.

  As shown in FIG. 2, the pressure sensing chip 10 of the first example has a rectangular parallelepiped shape of length × width × height = L × L × H. In this example, L = 1.5 mm and H = 0.5 mm.

The pressure sensing chip 10 in this example includes a first electrode 1, a second electrode 2, and an insulating layer (dielectric layer) 3 between the first electrode 1 and the second electrode 2. In this example, the first electrode 1 and the second electrode 2 are made of a conductor made of single crystal silicon (Si). In this example, the insulating layer 3 is composed of an insulating film made of an oxide film (SiO ₂ ). The insulating layer 3 does not need to be formed of an oxide film, and may be formed of other insulating materials.

  And in this example, the circular recessed part 4 centering on the center position of the said surface is formed in the surface side which opposes the 1st electrode 1 of this insulating layer 3. As shown in FIG. Due to the recess 4, a space 5 is formed between the insulating layer 3 and the first electrode 1. In this example, the bottom surface of the recess 4 is a flat surface, and its diameter D is, for example, D = 1 mm. In addition, the depth of the concave portion 4 is about several tens of microns to several hundreds of microns in this example.

  The pressure sensing chip 10 of this example is manufactured by a semiconductor process as follows. First, the insulating layer 3 made of an oxide film is formed on the single crystal silicon constituting the second electrode 2. Next, a recess 4 is formed by arranging and etching a mask covering a portion other than the circular portion having a diameter D so that a space 5 is formed in the insulating layer 3 of the oxide film. . Then, single crystal silicon constituting the first electrode 1 is deposited on the insulating layer 3. As a result, the pressure sensing chip 10 including the space 5 is formed below the first electrode 1.

  Due to the presence of the space 5, the first electrode 1 can be displaced so as to bend in the direction of the space 5 when pressed from the surface 1 a side opposite to the surface facing the second electrode 2. The thickness t of single crystal silicon as an example of the first electrode 1 is a thickness that can be bent by the applied pressure P, and is thinner than the second electrode 2. As will be described later, the thickness t of the first electrode 1 is selected so that the bending displacement characteristic of the first electrode 1 with respect to the applied pressure P becomes a desired one.

  In the pressure sensing chip 10 configured as described above, a capacitance Cv is formed between the first electrode 1 and the second electrode 2. Then, as shown in FIG. 2A, a pressure P is applied to the first electrode 1 from the upper surface 1a side of the first electrode 1 opposite to the surface facing the second electrode 2. Then, the first electrode 1 bends as shown by a dotted line in FIG. 2A, and the distance between the first electrode 1 and the second electrode 2 becomes short, and the capacitance Cv is reduced. The value changes so as to increase. The amount of bending of the first electrode 1 changes according to the magnitude of the applied pressure P. Therefore, the electrostatic capacitance Cv changes according to the magnitude of the pressure P applied to the pressure sensing chip 10 as shown in the equivalent circuit of FIG.

  Note that the single crystal silicon exemplified as the first electrode 1 is bent several microns due to pressure. The capacitance of the capacitor Cv exhibits a change of 0 to 10 pF (picofarad) due to the pressing force P causing the deflection.

  In the pressure sensing semiconductor device 100 of this embodiment, the pressure sensing chip 10 having the above-described configuration has a surface 1a of the first electrode 1 that receives pressure as shown in FIGS. 1 (A) and 1 (B). 20 is housed in the package 20 so as to face the upper surface 20a of the package 20.

  In this example, the package 20 includes a package member 21 made of an electrically insulating material such as a ceramic material or a resin material, and an elastic member 22 provided in the package member 21 on the surface 1a side where the pressure sensing chip 10 receives pressure. It consists of. The elastic member 22 is an example of a pressure transmission member having a predetermined elasticity.

  In this example, a recess 21 a corresponding to the area of the first electrode 1 is provided in an upper portion of the package member 21 on the surface 1 a side of the first electrode 1 where the pressure sensing chip 10 receives pressure. The recess 21a is filled with an elastic member 22 and disposed. In this example, the elastic member 22 is made of silicon resin having a predetermined elasticity, and in particular made of silicon rubber.

  The package 20 is formed with a communication hole 23 that communicates from the upper surface 20 a to a part of the elastic member 22. That is, the package member 21 is provided with a through hole 21 b that constitutes a part of the communication hole 23, and the elastic member 22 is provided with a concave hole 22 a that constitutes an end of the communication hole 23. Yes. Further, a tapered portion 21c is formed on the opening portion side (upper surface 20a side) of the communication hole 23 of the package member 21, and the opening portion of the communication hole 23 has a trumpet shape.

  In FIGS. 1A and 1B, as shown by the dotted line, the communication hole 23 is pressed to apply pressure applied from the outside, such as a pressing force by the user, to the pressure sensing semiconductor device 100. A rod-like protruding member 300 as a member is inserted. In this case, the external pressure P is applied in the axial direction (center line direction) of the rod-shaped protruding member 300. In this example, the inner diameter of the through hole 21b is slightly larger than the diameter of the portion where the protruding member 300 abuts the through hole 21b, and the inner diameter of the recessed hole 22a is the same as that of the protruding member 300. By making the diameter slightly smaller than the diameter of the portion in contact with the tapered member 21, the tapered portion 21 c and the through hole 21 b facilitate the guide of the protruding member 300 into the pressure sensing semiconductor device 100, and the pressure sensing semiconductor device 100. The projecting member 300 inserted in is not configured to easily fall off.

  That is, since the opening of the communication hole 23 has a trumpet shape, the protruding member 300 is guided by the tapered portion 21c of the opening and is easily guided and inserted into the communication hole 23. Then, the protruding member 300 is pushed into the concave hole 22 a of the elastic member 22 at the end of the communication hole 23. Thus, the protruding member 300 is inserted into the communication hole 23 of the pressure sensing semiconductor device 100 so that the pressure sensing chip 10 is positioned in a state in which the pressure P in the axial direction is applied to the surface side where the pressure is received. Is done.

  In this case, since the inner diameter of the recessed hole 22a is slightly smaller than the diameter of the portion where the protruding member 300 contacts the recessed hole 22a, the protruding member 300 is more elastic by the elastic member 22 in the recessed hole 22a of the elastic member 22. It will be in the state held by. That is, when the protruding member 300 is inserted into the communication hole 23 of the pressure sensing semiconductor device 100, the protruding member 300 is held by the pressure sensing semiconductor device 100. On the other hand, the holding state by the pressure sensing semiconductor device 100 can be easily released by pulling out the protruding member 300 with a predetermined force.

  1A and 1B, a first lead terminal 31 connected to the first electrode 1 of the pressure sensing chip 10 is derived from the package member 21 of the pressure sensing semiconductor device 100. At the same time, the second lead terminal 32 connected to the second electrode 2 of the pressure sensing chip 10 is led out. The first lead terminal 31 is electrically connected to the first electrode 1 by, for example, a gold wire 33. The second lead terminal 32 is electrically connected to the second electrode 2 by being led out in contact with the second electrode 2. Of course, the second lead terminal 32 and the second electrode 2 may be electrically connected by a gold wire or the like.

  In this example, the first and second lead terminals 31 and 32 are made of a conductor and are wide as shown in the figure. In this example, the first and second lead terminals 31 and 32 are led out from the bottom surface 20b facing the top surface 20a of the package 20 in a direction perpendicular to the bottom surface 20b, and the pressure sensing semiconductor. They are derived so as to face each other in parallel with an interval corresponding to the thickness d of the printed wiring board 200 on which the device 100 is disposed.

  Then, as shown in FIG. 1C, the first and second lead terminals of the pressure sensing semiconductor device 100 with the bottom surface 20b of the package 20 in contact with the end surface 200a of the printed wiring board 200. 31 and 32 are arranged so as to sandwich the thickness direction of the printed wiring board 200.

  Then, the printed wiring pattern 202 provided on the one surface 200 b of the printed wiring board 200 and the first lead terminal 31 are electrically connected and fixed by the solder 201. Although not shown, the printed wiring pattern provided on the surface opposite to the one surface 200b of the printed wiring board 200 and the second lead terminal 32 are similarly fixed by soldering. When a signal processing circuit (IC or the like) is provided on the one surface 200b side of the printed wiring board 200, the printed wiring pattern to which the second lead terminal 32 is soldered is the same as the one surface 200b of the printed wiring board 200. Is provided on the opposite side surface, and is connected to the printed wiring pattern 202 on the one surface 200b side through a through hole provided in the printed wiring board 200 and connected to the signal processing circuit.

  In this state, as shown in FIG. 1C, when a pressing force P is applied in the axial direction of the protruding member 300, a pressure corresponding to the pressing force P is applied to the pressure sensing chip 10 via the elastic member 22. To be applied. As described above, the capacitance Cv of the pressure sensing chip 10 changes according to the pressure applied to the pressure sensing chip 10. Therefore, the signal processing circuit provided on the printed wiring board 200 performs signal processing according to the capacitance value of the electrostatic capacitance Cv.

  In this case, as shown in FIG. 1 (B), pressure is applied to the first electrode 1 via the elastic member 22 on the surface 1a side on which the pressure sensing chip 10 receives pressure, so that the projecting member The capacitance Cv corresponding to the pressing force P by 300 is exhibited.

  In this case, the surface on which the pressure sensing chip 10 receives pressure is not directly pressed by the projecting member 300 by the projecting member 300, but the elastic member 22 is connected to the projecting member 300, the pressure sensing chip 10, and the like. Therefore, pressure resistance and shock resistance on the surface side where the pressure sensing chip 10 receives pressure is improved, and the surface side is prevented from being damaged by excessive pressure, unexpected instantaneous pressure, and the like. Can do. That is, in the pressure sensing semiconductor device 100 of the first embodiment, the pressure sensing chip 10 receives the pressure caused by the pressing force P by the protruding member 300 from the outside via the elastic member 22 as a pressure transmission member having a predetermined elasticity. Therefore, it has pressure resistance against shock applied to the pressure sensing chip 10, more specifically, the first electrode 1 receiving pressure, and shock resistance.

  Further, the protruding member 300 as a pressing member is positioned by being inserted into a communication hole 23 provided in the package 20 of the pressure sensing semiconductor device 100 and guided. Therefore, the pressure applied by the protruding member 300 is reliably transmitted to the pressure sensing chip 10 via the elastic member 22.

  Then, the pressing force applied by the protruding member 300 is transmitted by the elastic member 22 as a pressure to the surface 1 a of the first electrode 1 of the pressure sensing chip 10. Therefore, the pressing force applied by the protruding member 300 is applied to the surface 1a on which the pressure sensing chip 10 receives pressure, and the capacitance Cv of the pressure sensing chip 10 corresponds to the pressing force P. Change. That is, the pressure sensing semiconductor device 100 of this embodiment exhibits a change in capacitance corresponding to the pressing force P, and when this is used for detecting the pen pressure as described at the beginning, for example, Can be detected satisfactorily.

[Modification of First Embodiment]
<Adjustment of pressure-capacitance change characteristics>
<First example>
In the pressure sensing chip 10 of the pressure sensing semiconductor device 100 according to the first embodiment described above, when the thickness t of the single crystal silicon constituting the first electrode 1 to which the pressure is applied is changed, the pressure sensing chip 10 is changed according to the applied pressure. The amount of bending of the first electrode 1 changes. Therefore, by selecting the thickness t of the first electrode 1, the capacitance change characteristic of the capacitance Cv of the pressure sensing chip 10 with respect to the applied pressure P can be changed.

  FIG. 3 is a characteristic diagram illustrating an example of a capacitance change characteristic of the capacitance Cv with respect to the pressure applied to the pressure sensing chip 10. As shown in FIG. 3, when the thickness of the first electrode 1 is t = t1, the capacitance change characteristic of the capacitance Cv of the pressure sensing chip 10 with respect to the applied pressure is as shown by a curve 40. .

  When the thickness t of the first electrode 1 is set to t2 (t2> t1) which is thicker than t1, the first electrode 1 becomes more difficult to bend with respect to the applied pressure. The capacitance change characteristic of the capacitance Cv with respect to the curve 40 changes in the same manner as the curve 40, but becomes a curve 41 that changes more slowly than the curve 40.

  In addition, when the thickness t of the first electrode 1 is set to t3 (t3 <t1) which is thinner than t1, the first electrode 1 is more easily bent with respect to the applied pressure. The capacitance change characteristic of the capacitance Cv with respect to the curve 40 changes in the same manner as the curve 40, but becomes a curve 42 with a steeper change than the curve 40.

  As described above, by changing the thickness t of the first electrode 1 of the pressure sensing chip 10, the capacitance change characteristic of the capacitance Cv with respect to the applied pressure can be selected as desired.

  In the above example, the thickness t of the first electrode 1 is changed. However, by changing the material of the first electrode 1 such as a material that is more easily bent and a material that is less likely to be bent, Even if the thickness t is the same, the capacitance change characteristic of the capacitance Cv of the pressure sensing chip 10 with respect to the applied pressure can be changed. In this case, the capacitance change characteristics can be changed more finely by changing the material of the first electrode 1 and changing the thickness t.

  Note that the relationship between the elastic member 22 and the first electrode 1 can be understood by selecting the elastic modulus of the elastic member 22 or by comparing FIGS. 10B and 11B described later. Since the application characteristic (transmission characteristic) of the pressure to the pressure sensing chip 10 can be changed by giving variations in the joint relationship (for example, the contact shape), the pressure sensing chip 10 can be changed in this way. The capacitance change characteristic of the electrostatic capacitance Cv can also be changed.

<Second example>
In the above example, the capacitance change characteristics of the capacitance Cv with respect to the pressure applied to the pressure sensing chip 10 have similar tendencies. The second example is an example in which the rate of change of the capacitance change characteristic of the capacitance Cv with respect to the pressure applied to the pressure sensing chip 10, that is, the so-called gradient change tendency has different characteristics.

  In the second example, the concave portion 4 of the insulating layer 3 of the pressure sensing chip 10 does not form a uniform plane on the surface that forms the space 5 facing the first electrode 1. By making the thickness non-uniform, the capacitance change characteristic of the capacitance Cv with respect to the pressure of the pressure sensing chip 10 becomes desired. 4A and 4B are views for explaining the pressure sensing chips 10A and 10B of the second example, and are cross-sectional views of the pressure sensing chip 10 shown in FIG. 2A, respectively. It is sectional drawing corresponding to. 4A and 4B, the same parts as those of the pressure sensing chip 10 described above are denoted by the same reference numerals, and the description thereof is omitted.

  In the pressure sensing chip 10A of the example of FIG. 4A, the thickness of the recess 4A formed in the insulating layer 3 changes so that the surface of the recess 4A facing the first electrode 1 gradually becomes deeper. In this example, two stepped portions 61 and 62 are formed so that the surface of the recess 4A facing the first electrode 1 gradually becomes deeper. After the step 4A is formed as described above, the stepped portions 61 and 62 are provided with a mask that covers a portion other than a circular region of a predetermined size on the bottom surface facing the first electrode 1 of the recess 4A. Furthermore, it forms by repeating performing an etching process. By this etching process, the unmasked circular region becomes a recess having a deeper depth than its periphery, and stepped portions 61 and 62 are formed.

  The characteristic curve of the capacitance Cv with respect to the applied pressure in the case of the pressure sensing chip 10 having the concave portion 4 whose surface facing the first electrode 1 is a flat surface is a curve 43 in FIG. Then, the pressure sensing chip 10A in the example of FIG. 4A is as shown by a curve 44 in FIG. 5, and the capacitance Cv changes in a substantially linear proportion to the applied pressure. Has characteristics.

  In order to obtain the characteristic shown by the curve 44 in FIG. 5, the stepped portion 61 as in the above example can be used as a method of gradually deepening the facing surface of the recess 4 </ b> A to the first electrode 1. , 62 is not limited to the method, and for example, a curved concave portion that gradually becomes deeper toward the center of the concave portion 4A may be used.

  Next, in the pressure sensing chip 10B of the example of FIG. 4B, the recess 4B formed in the insulating layer 3 differs from the example of FIG. 4A with the first electrode 1 of the recess 4B. This is an example of a case where the thickness of the opposite surface is gradually changed so as to gradually approach the first electrode 1 side from the peripheral portion toward the central portion. In this example, bulging portions 63 and 64 bulging toward the first electrode 1 are formed on the surface of the recess 4B facing the first electrode 1.

  In the case of this example, first, in the oxide film constituting the insulating layer 3, a mask is provided on the portion excluding the bulging portion 63 and etching is performed, and the bulging portion 63 portion is projected. And Next, the portion of the bulging portion 63 is masked, and a mask is applied in a state in which the portion of the bulging portion 64 around the bulging portion 63 is exposed, and an etching process is performed to The bulging portion 64 is formed around the bulging portion 63 so as to form a region deeper than the bulging portion 63. Next, the portions of the bulging portions 63 and 64 are masked, and a mask is applied in a state in which the portion of the concave portion 4B around the protrusions 63 and 64 is exposed, and an etching process is performed, so that the bulging portions 63 and 64 are applied. A region deeper than the bulging portion 64 is formed around this portion. By repeatedly performing such processing as necessary, a space 5 having a shape in which the central portion bulges out from the peripheral portion as shown in FIG. 4B can be formed.

  In the example of FIG. 4B, the characteristic curve of the capacitance Cv with respect to the pressure applied to the pressure sensing chip 10B is as shown by a curve 45 in FIG. 5, and the capacitance is large when the applied pressure is small. As the applied pressure increases and the applied pressure increases, the capacitance changes less.

  In order to obtain the characteristic shown by the curve 45 in FIG. 5, the distance between the recess 4B and the surface facing the first electrode 1 is closer to the first electrode 1 side toward the center of the recess 4B. The method of making the shape shorter as it gets closer is not limited to the method of forming the bulging portions 63 and 64 as in the above example, and the surface of the recess 4B that faces the first electrode 1 is not limited. For example, a dome shape that gradually bulges in a curved shape toward the center of the recess 4B may be used.

  As described above, the shape of the surface facing the first electrode 1 of the recesses 4A and 4B for forming the space 5 formed between the insulating layer 3 and the first electrode 1 is changed. Thus, by making the distance from the first electrode 1 non-uniform, the characteristic of the capacitance Cv with respect to the pressure applied to the pressure sensing chips 10A and 10B can be made a desired characteristic.

  As in the case of the pressure sensing chip 10 described above, the characteristics of the capacitance Cv with respect to the pressure applied to the pressure sensing chips 10A and 10B are the thickness t of the first electrode 1, the elastic modulus of the elastic member 22, and the like. Desired characteristics can also be achieved by providing variations in the elastic characteristics or the engagement relationship (for example, the contact shape) between the elastic member 22 and the first electrode 1.

  That is, the pressure sensing chip 10 is changed by changing the shape of the tip of the protruding member 300 engaged with the elastic member 22 to, for example, a curved surface shape, a sharp pointed shape, or a planar shape. , 10A, 10B, the way of bending the first electrode 1 in the direction of the space 5 is changed. As described above, by changing the shape of the tip of the protruding member 300 engaged with the elastic member 22 to various shapes as described above, the capacitance change characteristic of the variable capacitance Cv of the pressure sensing chip 10 with respect to the applied pressure. Can be changed.

<Positioning mounting of pressure sensing semiconductor device to printed wiring board>
In the above-described embodiment, as shown in FIG. 1C, the bottom surface 20b facing the top surface 20a of the package 20 of the pressure sensing semiconductor device 100 is pressed against the end surface 200a of the printed circuit board 200, The pressure sensing semiconductor device 100 is attached to the wiring board 200.

  In this case, if the bottom surface 20 b of the package 20 of the pressure sensing semiconductor device 100 is a flat surface, it is difficult to position the pressure sensing semiconductor device 100 on the end surface 200 a of the printed wiring board 200. The example shown below considers this positioning.

  FIGS. 6A and 6B are diagrams for explaining an example of a pressure sensing semiconductor device that can be easily positioned on a printed wiring board, and is an AA in FIG. 1B described above. This corresponds to the line cross-sectional view and FIG. 6A and 6B, the same parts as those of the pressure sensing semiconductor device 100 of the example of FIG. 1 described above are denoted by the same reference numerals, and the description thereof is omitted.

  In the pressure sensing semiconductor device 100A in the example of FIG. 6A, a protrusion 24 is provided, for example, at the center of the bottom surface 20b of the package 20. On the other hand, the end surface 200a of the printed wiring board 200 is formed with a recess 203 into which the protrusion 24 of the pressure sensing semiconductor device 100A is fitted. The protrusion 24 may have any shape for positioning, such as a columnar shape, a quadrangular prism shape, a conical shape, a truncated cone shape, a truncated pyramid shape, or a dome shape. Needless to say, the recess 203 has a shape corresponding to the shape of the protrusion 24.

  The recessed portion 203 is formed on the end surface 200a of the printed wiring board 200 at a position where the printed wiring board 200 is sandwiched between the lead terminals 31 and 32 of the pressure sensing semiconductor device 100A, and the protrusion 24 of the pressure sensing semiconductor device 100A is fitted into the recessed portion 203. The lead terminal 31 of the pressure sensing semiconductor device 100A is a position where it is electrically connected to the printed wiring pattern 202 provided on the one surface 200b of the printed wiring board 200. When positioned in this way, although not shown, the lead terminal 32 of the pressure sensing semiconductor device 100A is also electrically connected to the printed wiring pattern formed on the surface opposite to the surface 200b of the printed wiring board 200. Positioned to be connected to

  Therefore, the printed wiring board 200 is sandwiched between the lead terminals 31 and 32 of the pressure sensing semiconductor device 100A, and the protrusion 24 of the pressure sensing semiconductor device 100A is fitted into the concave portion 203 of the printed wiring board 200. The pressure sensing semiconductor device 100A can be easily positioned, and operations such as soldering can be easily and reliably performed. Note that the protrusion 24 provided on the package 20 and the recess 203 provided on the printed wiring board 200 can be replaced with each other. That is, it is also possible to position each other by providing the package 20 with a concave portion and providing the printed wiring board 200 with a convex portion.

  Further, the pressure sensing semiconductor device 100 is positioned with respect to the printed wiring board 200 by notching the end surface 200 a of the printed wiring board 200 and forming a recess for accommodating the package 20 of the pressure sensing semiconductor device 100. You can also. FIG. 6B shows this example. In the pressure sensing semiconductor device 100B of this example, the bottom surface 20b side of the package 20 is accommodated in the recess 25 formed by partially cutting the end surface 200a of the printed wiring substrate 200, so that the end surface of the printed wiring substrate 200 is obtained. Positioned with respect to 200a.

  In the example of FIG. 6B, the pressure sensing semiconductor device 100B is easily positioned with respect to the printed wiring board 200 in the same manner as in the example of FIG. And it can carry out reliably.

<Holding of pressing member (protruding member) 300 in pressure sensing semiconductor device>
In the pressure sensing semiconductor devices 100, 100A, and 100B of the above-described example, the elastic member 22 is formed of silicon rubber, and the inner diameter of the concave hole 22a provided in the elastic member 22 constituting a part of the communication hole 23 is set to the pressure member. By making the diameter slightly smaller than the diameter of the rod-like protruding member 300 as an example, the protruding member 300 is held in the communication hole 23. However, in the pressure sensing semiconductor device, the means for holding the rod-like protruding member 300 is not limited to such holding means.

  FIG. 7 is a view for explaining a pressure sensing semiconductor device 100C provided with another example relating to a holding means for holding the rod-like protruding member 300, and FIG. 7A is a view of FIG. FIG. 7B is a view corresponding to the cross-sectional view taken along the line A, and is a view seen from the upper surface 20a side of the package 20. 7A and 7B, the same parts as those in the pressure sensing semiconductor device 100 of the example of FIG. 1 described above are denoted by the same reference numerals, and the description thereof is omitted.

  In the example of FIG. 7, the inner diameter of the concave hole 22a of the elastic member 22 is selected to be approximately equal to the diameter of the portion of the protruding member 300 that contacts the concave hole 22a or slightly larger than the diameter of the portion that contacts. To do. 7A and 7B, a plurality of protrusions are formed on the inner wall surface of the concave hole 22a of the elastic member 22. In the example of FIG. 7, four protrusions 26a, 26b, 26c, and 26d are provided. Are formed at intervals of 90 degrees, for example. In this case, the distance between the protrusion 26a and the protrusion 26c and the distance between the protrusion 26b and the protrusion 26d are shorter than the diameter of the portion with which the protruding member 300 abuts.

  According to the example of FIG. 7, when the protruding member 300 is inserted into the communication hole 23, the protruding member 300 is elastically held by the four protrusions 26a, 26b, 26c, and 26d. Moreover, the protruding member 300 can be easily pulled out from the communication hole 23 of the pressure sensing semiconductor device 100C.

  Note that the number of protrusions formed on the inner wall surface of the recessed hole 22a may be two or more, and preferably three or more. Moreover, you may make it form such a some protrusion further in the centerline direction of the protruding member 300. FIG.

  In addition, as a holding means for holding the rod-shaped protruding member 300, an O-ring-shaped protruding portion can be used instead of providing a plurality of protrusions 26a, 26b, 26c, and 26d on the inner wall surface of the recessed hole 22a of the elastic member 22. May be formed. Even in that case, a plurality of O-ring-shaped protrusions on the inner wall of the concave hole 22 a of the elastic member 22 may be formed in the center line direction of the protruding member 300. In that case, the inner diameter of the O-ring-shaped protrusion is slightly smaller than the diameter of the portion with which the protruding member 300 abuts.

  Further, a plurality of strip-shaped protrusions are formed on the inner wall of the concave hole 22 a of the elastic member 22 in the direction along the center line direction of the protruding member 300, thereby constituting a holding means for the rod-shaped protruding member 300. You can also.

<Other examples of lead terminal derivation methods from pressure sensing semiconductor devices>
In the pressure sensing semiconductor device of the above-described embodiment, the lead terminal 31 connected to the first electrode 1 and the lead terminal 32 connected to the second electrode 2 are separated by the thickness of the printed wiring board 200. The pressure sensing semiconductor device is attached to the printed wiring board 200 such that the printed wiring board 200 is sandwiched between the two lead terminals 31 and 32 in the thickness direction. Therefore, the lead terminal 31 is soldered to the printed wiring pattern on the one surface 200b of the printed wiring board 200, and the lead terminal 32 is soldered to the printed wiring pattern on the surface opposite to the one surface 200b.

  Since the lead terminal 31 and the lead terminal 32 are connected to different surfaces of the printed wiring board 200 as described above, the lead terminal 32 is a signal provided on the one surface 200b side of the printed wiring board 200. When connecting to the processing circuit unit, it is necessary to connect the printed wiring pattern on the surface opposite to the one surface 200b to the conductive pattern on the one surface 200b side through, for example, a through hole.

  In the pressure sensing semiconductor device of the example described below, the lead terminals corresponding to the lead terminals 31 and 32 are both led out to the one surface 200b side of the printed wiring board 200, so that connection through a through hole or the like is not required. This is a good example.

  FIG. 8 is a diagram for explaining the pressure sensing semiconductor device 100D of this example, and FIG. 8A is similar to the case of FIG. 1C on the end surface 200a of the printed wiring board 200. The figure which shows the state which attached pressure sensing semiconductor device 100D, and FIG. 8 (B) is CC sectional view taken on the line of FIG. 8 (A). 8A and 8B, the same parts as those of the pressure sensing semiconductor device 100 in the example of FIG. 1 described above are denoted by the same reference numerals, and the description thereof is omitted.

  In the pressure sensing semiconductor device 100D of the example of FIG. 8, the size of the package 20 is slightly smaller than that of the example of FIG. 8A and 8B, a lead terminal 31D connected to the first electrode 1 of the pressure sensing chip 10 and a lead terminal 32D connected to the second electrode 2 Is formed in a direction perpendicular to the side surface from one side surface 21d side of the package member 21 of the package 20, and then bent at a right angle as shown in the figure.

  A dummy terminal 34 that is not electrically connected to the pressure sensing chip 10 is led out from the side surface 21e facing the one side surface 21d of the package member 21. The dummy terminal 34 also has a shape bent at a right angle as shown in the figure. The dummy terminal 34 has the same width as the lead terminal 32 of the pressure sensing semiconductor device 100 described above.

  In this case, a portion where the lead terminals 31D and 32D led out from the side surface 21d side of the package member 21 are bent at a right angle and a portion where the dummy terminal 34 led out from the side surface 21e side is bent at a right angle face each other. As shown in FIGS. 8A and 8B, the distance between them is selected to be approximately equal to the thickness d of the printed wiring board 200. Other configurations of the pressure sensing semiconductor device 100D are the same as those of the pressure sensing semiconductor device 100.

  As shown in FIG. 8A, the pressure sensing semiconductor device 100D of this example includes dummy terminals such as lead terminals 31D and 32D in a state where the bottom surface 20b of the package 20 is in contact with the end surface 200a of the printed wiring board 200. The terminals 34 are arranged so as to sandwich the thickness direction of the printed wiring board 200.

  Then, the printed wiring patterns 202D and 203D provided on the one surface 200b of the printed wiring board 200, and the first lead terminal 31D and the second lead terminal 32D are respectively soldered and fixed. Although not shown, similarly, the dummy terminal 34 is fixed to the dummy wiring pattern by soldering on the surface opposite to the one surface 200b of the printed wiring board 200.

  According to the pressure sensing semiconductor device 100D of this example, the same effects as those of the pressure sensing semiconductor device 100 described above can be obtained, and the lead terminal 31D and the second electrode connected to the first electrode 1 of the pressure sensing chip 10 can be obtained. Since both lead terminals 32D connected to 2 are located on the one surface 200b side of the printed wiring board 200, the lead terminals 32 connected to the second electrode 2 are connected to the printed wiring like the pressure sensing semiconductor device 100. For example, it is not necessary to provide a wiring such as a through hole for connecting to the printed wiring pattern on the one surface 200b side of the substrate 200.

[Second Embodiment]
In the pressure sensing semiconductor device of the first embodiment described above, an elastic member as an example of a pressure transmission member is disposed in the package. However, the package member that constitutes the package is also made of an elastic material, so that the package member can also be used as a pressure transmission member. The second embodiment is an example of such a case.

  FIG. 9 is a view for explaining the pressure sensing semiconductor device 100E of the second embodiment. FIG. 9A is a perspective view of the pressure sensing semiconductor device 100E of the second embodiment, and FIG. 9B is a cross-sectional view taken along the line DD in FIG. 9A. 9A and 9B, the same parts as those of the pressure sensing semiconductor device 100 of the example of FIG. 1 described above are denoted by the same reference numerals, and the description thereof is omitted.

  That is, the package 20E of the pressure sensing semiconductor device 100E of the second embodiment is configured by a package member 21E made of an elastic resin material, for example, silicon rubber, and the elastic member 22 disposed independently is I don't have it.

  The package member 21E is formed with a communication hole 23E having a predetermined cross section corresponding to the communication hole 23 of the pressure sensing semiconductor device 100 described above, for example, a circular shape. As shown in FIG. 9B, O-ring-like protrusions 27a and 27b for holding a round bar-like protrusion member 300 are provided on the inner wall surface of the communication hole 23E. That is, the inner diameter of the communication hole 23E is equal to or slightly larger than the diameter of the portion with which the round bar-shaped projecting member 300 abuts, and the inner diameter of the O-ring-shaped projecting portions 27a and 27b is the same as that of the projecting member 300. It is selected to be smaller than the diameter of the contacting part.

  The first electrode 1 of the pressure sensing chip 10 is connected to a first lead terminal 31E made of a conductor, and the second electrode 2 is connected to a second lead terminal 32E made of a conductor. Connected. In the second embodiment, the first and second lead terminals 31E and 32E are parallel to the top surface 20Ea or the bottom surface 20Eb of the package 20E as shown in FIGS. 9A and 9B, and It is derived so as to be flush with the bottom surface 20Eb. Other configurations of the pressure sensing semiconductor device 100E are the same as those of the pressure sensing semiconductor device 100.

  In the pressure sensing semiconductor device 100E of the second embodiment, the bottom surface 20Eb is disposed in contact with the surface 200b of the printed wiring board 200 on which the printed wiring pattern is formed, and the first and second lead terminals are arranged. 31E and 32E are fixed to the printed wiring board 200 by being soldered to the conductor pattern.

  The pressure sensing semiconductor device 100E of the second embodiment has the same effects as the pressure sensing semiconductor device 100 of the above-described embodiment, and the package 20E is configured by a package member 21E that functions as a pressure transmission member. Therefore, the structure as a pressure sensing semiconductor device can be made very simple.

  Even when the pressure sensing semiconductor device 100E of the second embodiment is attached to the surface 200b on which the printed wiring pattern of the printed wiring board 200 is formed, the positioning to the end surface 200a as shown in FIG. 6 is performed. Similarly to the case, positioning can be performed by a positioning projection, a recess, a groove, or a projection.

[Third Embodiment]
In the pressure sensing semiconductor device 100 of the first embodiment described above, the elastic member 22 as an example of the pressure transmission member is housed in the recess provided in the package member 21. In the second embodiment described above, the package member 21 also has the function of a pressure transmission member. The main function as the pressure transmitting member is to transmit the pressure applied by the protruding member 300 to the pressure sensing chip 10 to cause the pressure sensing chip 10 to be elastically displaced according to the applied pressure. From this point of view, a further form of pressure transmission member is conceivable. As described above, the pressure transmission member preferably has a function capable of protecting against an unexpected instantaneous pressure.

  In the third embodiment, in consideration of the above function as a pressure transmission member, a member not fixed to the package member is disposed as the pressure transmission member.

  FIG. 10 is a view for explaining the pressure sensing semiconductor device 100F of the third embodiment. FIG. 10A is a perspective view of the pressure sensing semiconductor device 100F of the third embodiment, and FIG. 10B is a cross-sectional view taken along line EE of FIG. 10A. 10A and 10B, the same parts as those of the pressure sensing semiconductor device 100 in the example of FIG. 1 described above are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIGS. 10A and 10B, in the pressure sensing semiconductor device 100F of the third embodiment, the package 20F includes a package member 21F and pressure transmission members (22F, 28Fa, 28Fb). Composed. The package member 21F includes a main part 21Fa and a lid part 21Fb. Then, as shown in FIG. 10B, a concave portion 23F is formed in the main portion 21Fa of the package member 21F, and the pressure sensing chip 10 is opened above the first electrode 1 by the concave portion 23F. Stored. Further, a pressing protrusion 22Fa constituting the pressure transmission member 22F is accommodated in the recess 23F provided above the pressure sensing chip 10 so as to face the first electrode 1.

  In this example, a cushion member 28Fa having a predetermined elasticity is deposited on the upper surface of the first electrode 1 of the pressure sensing chip 10. The cushion member 28Fa protects the pressing protrusion 22Fa of the pressure transmission member 22F from directly contacting the first electrode 1 and damaging the first electrode 1, and also by the pressing member 300F through the pressure transmission member 22F. It plays the role of elastically transmitting the applied pressure. The cushion member 28Fa is made of, for example, silicon rubber. The elastic modulus or elastic characteristic is applied by a desired capacitance changing characteristic of the capacitance Cv of the pressure sensing chip 10 with respect to the applied pressure or the pressing member 300F. It is selected according to the impact resistance characteristics against unexpected pressure.

  The pressure transmission member 22F is exposed to the outside of the pressing protrusion 22Fa, the flange portion 22Fb, and the package 20F that contacts the first electrode 1 of the pressure sensing chip 10 via the cushion member 28Fa. And a pressing application portion 22Fc that protrudes from the upper surface 20Fa of the package 20F. In this example, the pressing protrusion 22Fa of the pressure transmission member 22F is formed in a spherical shape. Further, a cushion member 28Fb having a predetermined elasticity is formed on the surface of the flange portion 22Fb on the side of the pressing protrusion 22Fa. Further, the pressing application portion 22Fc has a columnar protrusion shape in this example.

  In this example, the pressure transmission member 22F elastically transmits the pressure applied from the pressing member 300F to the first electrode 1 of the pressure sensing chip 10 due to the presence of the cushion members 28Fa and 28Fb. Therefore, unlike the cushion members 28Fa and 28Fb, the pressure transmission member 22F can be made of a resin having no elasticity. Further, the pressure transmission member 22F may be made of an elastic material such as silicon rubber, and the cushion members 28Fa and 28Fb may have elastic characteristics capable of protecting against unexpected instantaneous pressure.

  When the pressure transmission member 22F is formed of an elastic body such as silicon rubber, the cushion member 28Fa and the cushion member 28Fb can be omitted.

  As shown in FIG. 10B, the recess 23F of the main part 21Fa of the package member 21F includes a recessed hole 23Fa for freely moving the pressing protrusion 22Fa of the pressure transmission member 22F, and the pressure transmission member 22F. The flange portion 22Fb includes a step portion 23Fb that engages with the cushion member 28Fb.

  In the pressure sensing semiconductor device 100F of the third embodiment, the pressure protrusion of the pressure transmission member 22F is inserted into the recess 23Fa of the recess 23F in the main portion 21Fa of the package member 21F in which the pressure sensing chip 10 is accommodated. The pressure transmission member 22F is inserted so that the flange portion 22Fb of the pressure transmission member 22F is engaged with the step portion 23Fb provided in the main portion 21Fa of the package member 21F via the cushion member 28Fb. It is mounted on the main part 21Fa of the package member 21F. At this time, the pressure application member 22Fc and the pressure projection 22Fa of the pressure transmission member 22F are arranged in the applied pressure direction orthogonal to the surface of the first electrode 1 of the pressure sensing chip 10.

  Then, while maintaining this mounting state, the upper portion of the pressure transmission member 22F is exposed in such a manner that the pressing portion 22Fc of the pressure transmission member 22F protrudes from the upper surface 20Fa of the package 20F by the lid portion 21Fb of the package member 21F. Is sealed.

  In the third embodiment, similarly to the pressure sensing semiconductor device 100 of the first embodiment, the first lead terminal 31F and the second electrode 2 connected to the first electrode 1 are connected to each other. The connected second lead terminal 32F is led out from the bottom surface 20Fb of the package 20F in a direction perpendicular to the bottom surface 20Fb.

  In the pressure sensing semiconductor device 100F of the third embodiment, the tip of the pressing member 300F presses the upper surface of the pressing application portion 22Fc of the pressure transmission member 22F. In the third embodiment, the pressing application unit 22Fc is configured to protrude from the upper surface 20Fa of the package 20F. However, it is the same surface as the upper surface 20Fa or in a direction closer to the pressure sensing chip 10 than the upper surface 20Fa. A backward configuration may be used.

  When the pressing force by the pressing member 300F is applied to the pressing application portion 22Fc of the pressure transmission member 22F, the pressing protrusion 22Fa of the pressure transmission member 22F causes the first protrusion of the pressure sensing chip 10 by the elasticity of the cushion members 28Fa and 28Fb. The electrode 1 is pressed toward the space 5 side. As a result, the first electrode 1 of the pressure sensing chip 10 is bent toward the space 5 and the capacitance Cv changes.

  In the pressure sensing semiconductor device 100F of the third embodiment, since the shape of the pressing protrusion 22Fa of the pressure transmitting member 22F is spherical, the direction of the pressing force applied from the pressing member 300F is the pressure sensing. Even if the direction perpendicular to the surface of the first electrode 1 of the chip 10 is different, the position of the contact point between the cushion member 28Fa and the spherical pressing protrusion 22Fa is maintained. 1 can maintain a stable contact state.

[Modification of Third Embodiment]
In the example of FIG. 10, the pressure transmission member 22F is provided with a pressing application portion 22Fc that protrudes from the upper surface 20Fa of the package 20F. On the other hand, a concave portion or a concave hole may be provided in place of such a projecting shape in order to more reliably receive the pressure applied by the pressing member from the outside.

  FIG. 11 is a diagram for explaining a pressure sensing semiconductor device 100G according to a modification of the third embodiment having such a configuration. FIG. 11A is a perspective view of a pressure sensing semiconductor device 100G according to a modification of the third embodiment, and FIG. 11B is a sectional view taken along line FF in FIG. is there. In FIGS. 11A and 11B, the same parts as those of the pressure sensing semiconductor device 100 of the example of FIG. 1 described above are denoted by the same reference numerals, and the pressure sensing semiconductors of FIGS. 10A and 10B are used. Portions corresponding to the device 100F are indicated by adding G instead of the suffix F to the same numerals, and detailed description thereof is omitted.

  That is, in the example of FIG. 11, as in the example of FIG. 10, the package member 21G is composed of a main portion 21Ga and a lid portion 21Gb, and the pressure transmission member (22G, 28Ga, 28Gb) is disposed in the recess 23G. It is set as the housed configuration. Then, the pressure transmission member 22G applies a pressure that causes the first electrode 1 of the pressure sensing chip 10 to bend in the direction of the space 5 via cushion members 28Ga and 28Gb separately constituting the pressure transmission member. Is configured to be possible.

  In the example of FIG. 11, the structure of the pressure transmission member, specifically, the shape of the pressure transmission member 22G is different from the pressure transmission member of the example of FIG. Other configurations of the pressure sensing semiconductor device 100G are the same as those of the pressure sensing semiconductor device 100F.

  That is, in the example of FIG. 11, the pressure transmission member 22G includes a pressing protrusion 22Ga, a flange 22Gb, and a pressing application unit 22Gc. As shown in FIG. 11B, the pressing protrusion 22Ga has a pointed tip, and the pressing application unit 22Gc includes a hemispherical recess 22Gd. In this case, the recess 22Gd and the pressing protrusion 22Ga of the pressure transmission member 22G are formed so as to be aligned in the pressure application direction orthogonal to the surface of the first electrode 1 of the pressure sensing chip 10.

  In the example of FIG. 11, the pressure of the pressure member 300 </ b> G is inserted by inserting the tip of a spherical pressure member 300 </ b> G facing the pressure transmission member 22 </ b> G into the recess 22 </ b> Gd provided in the pressure transmission member 22 </ b> G. Even if the application direction may be slightly different from the pressure application direction orthogonal to the surface of the first electrode 1 of the pressure sensing chip 10, it can function so that the deviation in this direction can be ignored, and thus stable. Thus, the pressure applied by the pressing member 300 </ b> G can be reliably transmitted to the first electrode 1 of the pressure sensing chip 10. The pressing protrusion 22Ga presses the first electrode 1 of the pressure sensing chip 10 toward the space 5 side by the pressing force applied by the pressing member 300G. As a result, the first electrode 1 of the pressure sensing chip 10 is bent toward the space 5 and the capacitance Cv changes.

  In the pressure sensing semiconductor device 100G of the example of FIG. 11, the tip of the pressing member 300G is inserted into the recess 22Gd provided in the pressure transmitting member 22G, so that a reliable connection between the pressure transmitting member 22G and the pressing member 300G is achieved. Positioning is performed. In this example, since the concave portion 22Gd has a hemispherical shape and the tip of the pressing member 300G has a spherical shape, the pressing direction by the pressing member 300G is the surface of the first electrode 1 of the pressure sensing chip 10. Is applied to the first electrode 1 of the pressure sensing chip 10 in the same manner as when the pressing force by the pressing member 300G is applied in the direction perpendicular to the electrode 1 even if it is slightly deviated from the vertical direction. Is done.

  In the third embodiment shown in FIGS. 10 and 11 described above, the shape of the tip of the pressure transmission member that presses the first electrode 1 of the pressure sensing chip 10 is a protrusion or a spherical shape. Including the projecting shape. Thus, by making the tip portion of the pressure transmission member into various protruding shapes, for example, the tip shapes of the pressing projection 22Fa of the pressure transmission member 22F or the pressing projection 22Ga of the pressure transmission member 22G, and the cushion member 28Fa. , 28Fb and / or the material of the cushion members 28Ga, 28Gb, the capacitance change characteristic of the capacitance Cv of the pressure sensing chip 10 with respect to the pressure applied by the pressing member 300F or the pressing member 300G is selected. It can be as desired. In this case, the tip portion of the pressure transmission member that presses the first electrode 1 of the pressure sensing chip 10 has a non-planar shape such as the above-described spherical shape or a pointed tip shape. The non-planar shape may be, for example, a pyramid or conical shape that presses the first electrode 1 side as a point, or may be a curved shape having a predetermined curvature. Further, the tip of the pressure transmitting member that presses the first electrode 1 of the pressure sensing chip 10 does not press as a point, but has a predetermined area and further corresponds to the pressure applied by the pressing member 300G. The shape may be such that the first electrode 1 is pressed so that the area changes nonlinearly.

[Fourth Embodiment]
In the above-described embodiment, the pressure sensing semiconductor device pressure is detected by the pressure sensing chip 10 in order to sense the pressure pressed from the direction parallel to the surface (substrate surface) on which the printed wiring pattern is formed of the printed wiring board. The surface of the first electrode 1 of the sensing chip 10 is attached so as to be parallel to the end surface of the printed wiring board. In this structure, the pressure sensing semiconductor device needs to be attached to the end face portion of the printed wiring board, and the degree of freedom of the attachment position may be limited.

  In the fourth embodiment described below, when a pressing force from a direction parallel to the substrate surface of the printed wiring board is applied to the first electrode 1 of the pressure sensing chip 10, the pressure sensing semiconductor device is used. 2 is a configuration example of a pressure sensing semiconductor device that can be disposed at an arbitrary position on a substrate surface of a printed wiring board.

  FIG. 12 shows a configuration example of the pressure sensing semiconductor device 100H of the fourth embodiment. FIG. 12A is an external perspective view of the pressure sensing semiconductor device 100H of this example, and FIG. It is the GG sectional view taken on the line in FIG.

  As shown in FIG. 12B, in the pressure sensing semiconductor device 100H of the fourth embodiment, the pressure sensing chip 10 includes a first electrode 1 and a second electrode 2 that are located with respect to the bottom surface 20Hb of the package 20H. And sealed in the package 20H in a perpendicular direction. The lead terminal 31H connected to the first electrode 1 of the pressure sensing chip 10 is led out in a direction parallel to the bottom surface 20Hb and flush with the bottom surface 20Hb. The lead terminal 32H connected to the second electrode 2 is also led out in a direction parallel to the bottom surface 20Hb and flush with the bottom surface 20Hb.

  A concave hole 23H is provided in the package member 21H of the package 20H that houses the pressure sensing chip 10 in a direction parallel to the bottom surface 20Hb of the package 20H. The recessed hole 23H communicates with the upper surface 1a of the first electrode 1 of the pressure sensing chip 10 in the package member 21H. Further, the opening side of the concave hole 23H is a tapered portion that spreads in a trumpet shape and guides the projection member 300H as a pressing member to be easily inserted.

  A cushion member 22H made of, for example, silicon rubber, which constitutes a pressure transmission member, is provided on the upper surface 1a side of the first electrode 1 of the pressure sensing chip 10. Furthermore, O-ring-shaped protrusions 23Ha and 23Hb are formed on the inner wall surface of the recessed hole 23H. The inner diameter of the recessed hole 23H is substantially equal to or slightly larger than the diameter of the portion where the protruding member 300H (indicated by a broken line in the figure) abuts against the pressure sensing semiconductor device 100H of this example. . The inner diameters of the O-ring-like projections 23Ha and 23Hb are selected to be slightly smaller than the diameter of the portion with which the projection-like member 300H (indicated by a broken line in the drawing) abuts.

  Therefore, the protruding member 300H is inserted into the concave hole 23H, and the tip of the protruding member 300H is brought into contact with the upper surface 1a of the first electrode 1 of the pressure sensing chip 10 via the cushion member 22H. Can be. As a result, a pressing force is applied to the projecting member 300H inserted into the concave hole 23H from a direction parallel to the upper surface 20Ha or the bottom surface 20Hb of the package 20H, whereby the first electrode 1 of the pressure sensing chip 10 is attached. , Can be deflected in the direction of the space 5, and the capacitance Cv of the pressure sensing chip 10 can be changed.

  At this time, according to the fourth embodiment, the protruding member 300H is held by the O-ring-shaped protruding portions 23Ha and 23Hb by being inserted into the recessed hole 23H. And the pressure according to the pressing force by the protruding member 300H is surely applied to the first electrode 1 of the pressure sensing chip 10 via the cushion member 22H.

  In the example of FIG. 12, the cushion member 22H is provided as the pressure transmission member. However, as in the example of FIG. 1, the front surface of the first electrode 1 of the pressure sensing chip 10 is formed in the recessed hole 23H. It can also be set as the structure which arrange | positions an elastic member. Moreover, it can also comprise so that a package member may have the function of a pressure transmission member by comprising the package member 21H with an elastic material like 2nd Embodiment.

  In the example of FIG. 12, the projecting member is selected by selecting one or both of the shape of the tip of the projecting member 300H and the material of the cushion member 22H, which are inserted into the recessed hole 23H. The capacitance change characteristic of the capacitance Cv of the pressure sensing chip 10 with respect to the pressure applied by 300H can be made desired.

[Fifth Embodiment]
Similarly to the fourth embodiment, the fifth embodiment is also adapted to the pressure applied by the projecting member from the direction parallel to the substrate surface of the printed wiring board when attached to the printed wiring board. This is an example of a pressure sensing semiconductor device in which the capacitance Cv of the pressure sensing chip 10 changes.

  FIG. 13 shows a configuration example of the pressure sensing semiconductor device 100I of the fifth embodiment. FIG. 13A is an external perspective view of the pressure sensing semiconductor device 100I, and FIG. It is the HH sectional view taken on the line in 13 (A).

  As shown in FIG. 13B, in the pressure sensing semiconductor device 100I of the fifth embodiment, the side surfaces of the pressure sensing semiconductor device 100F of the third embodiment shown in FIG. This is almost equivalent to an example in which the lead terminal derivation method is changed. The shape of the pressure transmission member is also very similar. Therefore, in FIG. 13, portions corresponding to the pressure sensing semiconductor device 100 </ b> F of the example of FIG. 10 are denoted by the same reference numerals with I added instead of the suffix F.

  That is, as shown in FIG. 13B, in the pressure sensing semiconductor device 100I of the fifth embodiment, the pressure sensing chip 10 includes the first electrode 1 and the second electrode 2 that are the bottom surfaces of the package 20I. It is sealed in the package 20I in a direction perpendicular to 20Ib. The lead terminal 31I connected to the first electrode 1 of the pressure sensing chip 10 is parallel to the bottom surface 20Ib and orthogonal to the direction in which the pressure P is applied by a protruding member (not shown). In the direction, it is derived so as to be flush with the bottom surface 20Ib. The lead terminal 32I connected to the second electrode 2 is also led out in a direction parallel to the bottom surface 20Ib and flush with the bottom surface 20Ib.

  As shown in FIGS. 13A and 13B, in the pressure sensing semiconductor device 100I of the fifth embodiment, the package 20I includes a package member 21I and a pressure transmission member 22I. And the pressure transmission member 22I is accommodated in the recessed part 23I in the package member 21I. In this case, in the pressure transmission member 22I, the pressing protrusion 22Ia of the pressure transmission member 22I is inserted into the recessed hole 23Ia, and the flange portion 22Ib of the pressure transmission member 22I is inserted into the package member 21I via the cushion member 28Ib. The pressure transmission member 22I is attached to the main part 21Ia of the package member 21I so as to abut with a step part 23Ib provided in the main part 21Ia.

  However, in the case of this example, a tapered portion is formed so as to spread in a trumpet shape on the opening side of the concave portion 23I of the package member 21I, and the pressure transmission member 22I is formed on the bottom portion of the tapered portion on the opening side. The pressure application unit 22Ic is exposed. That is, a concave portion is formed by the tapered portion provided on the lid portion 21Ib constituting the package member 21I and the exposed surface of the pressure applying portion 22Ic of the pressure transmission member 22I. The tip of the projecting member is guided by this recess and brought into contact with the pressure applying portion 22Ic of the pressure transmitting member 22I, so that the projecting member can be easily attached to the pressure sensing chip 10 and the pressure can be reliably transmitted. . In the case of this example, the pressing protrusion 22Ia of the pressure transmission member 22I presses the first electrode 1 of the pressure sensing chip 10 in the direction of the space 5 via the cushion member 28Ia.

  According to the fifth embodiment of the example of FIG. 13, as in the fourth embodiment, the pressure sensing semiconductor device 100I detects the pressure from the direction parallel to the top surface 20Ia or the bottom surface 20Ib of the package 20I. Will be able to. Furthermore, in the fifth embodiment, the same effects as those of the third embodiment described above can be obtained.

  In addition, although the shape of the front-end | tip part which presses the 1st electrode 1 of the pressure sensing chip | tip 10 of the pressure transmission member 22I in this 5th Embodiment was made into the spherical shape in FIG. 13, it is the same as 3rd Embodiment mentioned above. Similarly, various non-planar shapes can be used. Also in the fifth embodiment, the shape of the tip of the pressure transmission member 22I that presses the first electrode 1 of the pressure sensing chip 10, that is, the shape of the tip of the pressing protrusion 22Ia, the cushion member 28Ia, By selecting either one or both of the 28Ib materials, the capacitance change characteristic of the capacitance Cv of the pressure sensing chip 10 with respect to the pressure applied by the protruding member can be made desired.

[Sixth Embodiment]
In the sixth embodiment, as in the fourth to fifth embodiments, the pressure that changes the capacitance Cv of the pressure sensing chip 10 according to the pressing force from the direction parallel to the top surface or the bottom surface of the package. This is an example of the sensing semiconductor device 100J.

  FIG. 14 shows a configuration example of the pressure sensing semiconductor device 100J of the sixth embodiment. FIG. 14A is an external perspective view of the pressure sensing semiconductor device 100J, and FIG. It is the II sectional view taken on the line in 14 (A).

  As shown in FIGS. 14A and 14B, in the pressure sensing semiconductor device 100J of the sixth embodiment, the package 20J includes a package member 21J and a pressure transmission member 22J. The package member 21J includes a main part 21Ja and a lid part 21Jb. Then, as shown in FIG. 14B, the main part 21Ja of the package member 21J is bent in a key shape from above the first electrode 1 of the pressure sensing chip 10 in a direction parallel to the bottom surface 20Jb of the package 20J. A recess 23J is provided.

  In this example, a cushion member 28Ja is deposited on the first electrode 1 of the pressure sensing chip 10. The cushion member 28Ja protects the pressure transmission member 22J from directly contacting the first electrode 1 and damaging the first electrode 1, and elastically applies pressure applied through the pressure transmission member 22J. Play a role to communicate. The cushion member 28Ja is made of, for example, silicon rubber. The elastic modulus is selected according to the capacitance change characteristic of the capacitance Cv desired by the pressure sensing chip 10 with respect to the pressure P applied by the pressing member. Is done.

  The pressure transmission member 22J is exposed to the outside of the pressing protrusion 22Ja, the flange portion 22Jb, and the package 20J, which is in contact with the first electrode 1 of the pressure sensing chip 10 via the cushion member 28Ja. A pressure application unit 22Jc that receives pressure. In this example, the pressing protrusion 22Ja has a hemispherical shape. Also, a cushion member 28Jb is formed on the surface of the flange portion 22Jb on the pressing projection 22Ja side. In this example, the pressure transmission member 22J is formed with a recess 22Jd that receives the tip of the pressing member.

  As shown in FIG. 14B, the concave portion 23J of the main portion 21Ja of the package member 21J includes a concave hole 23Ja for freely accommodating the pressing projection 22Ja of the pressure transmission member 22J, and the pressure transmission member 22J. The flange portion 22Jb includes a step portion 23Jb that engages with the cushion member 28Jb.

  In the pressure sensing semiconductor device 100J of the sixth embodiment, the pressing protrusion 22Ja of the pressure transmission member 22J is inserted into the recess 23J in the main part 21Ja of the package member 21J in which the pressure sensing chip 10 is accommodated. At the same time, the flange 22Jb of the pressure transmission member 22J is brought into contact with the step portion 23Jb provided in the main portion 21Ja of the package member 21J via the cushion member 28Jb, so that the pressure transmission member 22J is It is attached to the main part 21Ja.

  Then, the package 20J is sealed in a state in which the pressing application portion 22Jc of the pressure transmission member 22J is exposed from the package 20J by the lid portion 21Jb of the package member 21J while maintaining this mounting state.

  As shown in FIG. 14B, in the pressure sensing semiconductor device 100J of the sixth embodiment, the pressure sensing chip 10 includes the first electrode 1 and the second electrode 2 on the upper surface of the package 20J. It is sealed in the package 20J in a state of being horizontal with respect to 20Ja or the bottom surface 20Jb. The lead terminal 31J connected to the first electrode 1 of the pressure sensing chip 10 is led out in a direction parallel to the pressure P applied by the bottom surface 20Jb and the pressing member and to be flush with the bottom surface 20Jb. Is done. The lead terminal 32J connected to the second electrode 2 is also led out in a direction parallel to the pressure P applied by the bottom surface 20Jb and the pressing member and to be flush with the bottom surface 20Jb.

  As described above, the recess 23J is formed as a guide hole for the pressure transmission member 22J that is bent in a key shape from the top of the first electrode 1, and the inclined wall 23Jc is formed in the key-shaped bent portion. It is set as the internal shape provided with. Then, the key-shaped pressure transmission member 22J corresponding to the internal shape of the recess 23J can change its position in the recess 23J in the direction in which the pressure P by the pressing member is applied. It will be in a state where it can be loosely fitted.

  The pressing protrusion 22Ja of the pressure transmission member 22J includes an inclined surface 22Je that abuts the inclined wall 23Jc of the recess 23J.

  Since the pressure sensing semiconductor device 100J of the sixth embodiment has the above-described structure, the pressure transmission member 22J generates the pressure P by the pressing member from the direction indicated by the arrow in FIG. When received, the pressure transmission member 22J is displaced in the direction in which the pressure P is applied by the cushion member 28Jb. Then, since the inclined surface 22Je of the pressing protrusion 22Ja of the pressure transmission member 22J is in contact with the inclined wall 23Jc in the recess 23J, the pressure transmission member 22J presses the first electrode 1 of the pressure sensing chip 10. Displace in the direction. Therefore, the first electrode 1 of the pressure sensing chip 10 bends according to the pressing force due to the displacement of the pressure transmission member 22J, and thereby the capacitance Cv of the pressure sensing chip 10 changes.

  Also in the pressure sensing semiconductor device 100J of the sixth embodiment, the capacitance of the pressure sensing chip 10 with respect to the pressure P by the pressing member is selected by selecting the material of the cushion members 28Ja and 28Jb and the elastic constant of the pressure transmitting member 22J. The capacity change characteristic of Cv can be made desirable. Further, even when the pressure P is excessively applied to the pressure sensing chip 10, the cushion members 28Ja and 28Jb having predetermined elasticity are disposed, so that the pressure sensing chip 10 can be prevented from being damaged by the excessive pressure P. Therefore, the package 20J and the pressure transmission member 22J can be formed of a resin material having a relatively high hardness such as plastic or ceramic. For this reason, the pressure P applied from the direction along the electrode surface of the pressure sensing chip 10 does not cause elastic deformation between the inclined wall 23Jc in the concave portion 23J and the inclined surface 22Je of the pressure transmitting member 22J. Can be reduced and converted into a direction perpendicular to the electrode surface of the pressure sensing chip 10.

[Seventh Embodiment]
The seventh embodiment is also a case of a pressure sensing semiconductor device that can sense a pressing force from a direction parallel to the top surface or bottom surface of the package when the pressure sensing semiconductor device is attached to the substrate surface of the printed wiring board. It is an example.

  FIG. 15 shows a configuration example of the pressure sensing semiconductor device 100K of the seventh embodiment. FIG. 15A is an external perspective view of the pressure sensing semiconductor device 100K, and FIG. It is the JJ sectional view taken on the line in 15 (A).

  The seventh embodiment is a modification of the sixth embodiment. That is, in the seventh embodiment, the pressure sensing chip 10 includes a first electrode 1 and a second electrode 2 arranged in a direction perpendicular to the top surface 20Ka or the bottom surface 20Kb of the package 20K. Sealed within 20K. The lead terminal 31K connected to the first electrode 1 of the pressure sensing chip 10 is led out in a direction parallel to the bottom surface 20Kb and the pressure P applied by the pressing member and flush with the bottom surface 20Kb. Is done. The lead terminal 32K connected to the second electrode 2 is also led out in a direction parallel to the bottom surface 20Kb and the pressure P applied by the pressing member and to be flush with the bottom surface 20Kb.

  As shown in FIGS. 15A and 15B, in the pressure sensing semiconductor device 100K of the seventh embodiment, the package member 21K constituting the package 20K includes a main part 21Ka and a lid part 21Kb. In the package member 21K, a recess 23K that is bent in a key shape from the top of the first electrode 1 of the pressure sensing chip 10 is formed.

  In the seventh embodiment, the recess 23K is filled with a fluid (or fluid) 29, and the recess 23K is closed by the closing valve 22Ka so that the fluid 29 does not leak. However, the closing valve 22Ka is displaceable as will be described later.

  In the seventh embodiment, the valve pressing portion 22Kb compresses the shutoff valve 22Ka and the fluid 29 via the cushion member 28Ka engaged with the step portion 23Kb provided in the main portion 21Ka of the package member 21K. Press in such a direction. The valve pressing portion 22Kb includes a recess 22Kd that receives the tip of the pressing member that applies the pressing force P from the lateral direction indicated by the arrow in FIG.

  Since the pressure sensing semiconductor device 100K of the seventh embodiment has the above-described structure, when the valve pressing portion 22Kb receives the pressing force P from the direction indicated by the arrow in FIG. The valve pressing portion 22Kb is displaced in the direction in which the pressing force P is applied by the cushion member 28Ka, and the closing valve 22Ka is displaced in the direction in which the fluid 29 is compressed accordingly.

  Then, the pressing force P transmitted to the fluid 29 is transmitted to the first electrode 1 of the pressure sensing chip 10, and the first electrode 1 of the pressure sensing chip 10 bends according to the pressing force P, thereby The capacitance Cv of the pressure sensing chip 10 changes.

  From the above, in the pressure sensing semiconductor device 100K of the seventh embodiment, the fluid 29, the closing valve 22Ka, the valve pressing portion 22Kb, and the cushion member 28Ka constitute a pressure transmission member. .

  In this case, in this example, the cross-sectional area of the recess 23K is selected to be smaller than the cross-sectional area Sb on the first electrode 1 of the pressure sensing chip 10 than the cross-sectional area Sa on the blocking valve 22Ka side. For this reason, the pressure applied to the blocking valve 22Ka side is transmitted as a large force on the first electrode 1 of the pressure sensing chip 10, and the pressing force P is efficiently transmitted to the first electrode 1 of the pressure sensing chip 10. Can be transmitted on one electrode 1.

  In the pressure sensing semiconductor device 100K of the seventh embodiment, the material of the cushion member 28Ka and the material of the fluid 29 have desired capacitance change characteristics of the capacitance Cv of the pressure sensing chip 10 with respect to the pressing force P. It is selected as follows. Here, the fluid 29 may be either a liquid or a gas, and may be anything as long as it can transmit the pressure P applied by the pressing member.

[Application examples of semiconductor devices]
The pressure sensing semiconductor device of the present invention described above can be applied to an electronic apparatus that realizes various functions and uses by using a capacitance that changes according to an applied pressure as part of a circuit.

  What will be described below is an example of the position indicator used together with the position detecting device described at the beginning, which is used for a device capable of detecting writing pressure. Hereinafter, this application example will be described. FIG. 16 is a diagram illustrating an external configuration example of the position indicator 400 and the position detection device 500 in which the pressure sensing semiconductor device according to the embodiment of the present invention is used.

  The position detection device 500 is used as an input device for these external devices by being connected to an external device (not shown) such as a personal computer or a portable device via a cable 501. Alternatively, the display unit is a device that can be operated without being connected to an external device.

  The position detection apparatus 500 of this example is configured by a detection unit 502 that detects the position indicated by the position indicator 400 by an electromagnetic induction method, and a housing 503 that forms a hollow thin substantially rectangular parallelepiped having the detection unit 502. ing. The housing 503 has an upper housing 505 having an opening 504 for exposing the detection surface of the detection unit 502, and a lower housing (not shown) that is superimposed on the upper housing 505. The upper housing 505 has a rectangular opening 504 that exposes the input surface of the detection unit 502, and the detection unit 502 is fitted into the opening 504. In the position detecting device 500 having such a configuration, characters, drawings, and the like are input by a pointing operation by the position indicator 400, and when the display unit is provided, the position detecting device 500 can perform the pointing operation by the position indicator 400 on the display unit. Corresponding display can be performed.

  Next, a configuration example of the position indicator 400 will be described with reference to FIG. FIG. 17 is a cross-sectional view of the position indicator 400 shown in FIG.

  The position indicator 400 instructs the position detection device 500 by the electromagnetic induction method. That is, the position indicator 400 has a resonance circuit that resonates with respect to an electromagnetic wave having a specific frequency transmitted from the position detection device 500. The position indicator 400 indicates the position to the position detection device 500 by transmitting a resonance signal detected by the resonance circuit to the position detection device 500.

  As shown in FIG. 17, a position indicator 400 includes a case 401 showing a specific example of a housing, a core body 402, a position indicating coil 403, a pressure sensing semiconductor device 404 constituting a variable capacitor, and a ferrite. A core 405 and a printed wiring board 406 are provided. The position indicating coil 403, the variable capacitance capacitor Cv of the pressure sensing semiconductor device 404, and a plurality of fixed capacitance capacitors 406c collectively connected as the capacitor Cf and connected in parallel to the variable capacitance capacitor Cv. A resonant circuit is configured. The number (capacitance) of the fixed capacitors 406c corresponding to the resonance frequency of the resonance circuit is selected.

  Case 401 is formed as an exterior part of position indicator 400. The case 401 has a bottomed cylindrical shape with one side closed. The case 401 is composed of a first case 407 and a second case 408 that are assembled and joined together in the axial direction. The first case 407 has a substantially conical shape on one end side in the axial direction, and has an opening 407a at the tip thereof. The other end in the axial direction of the first case 407 is open.

  The second case 408 has a cylindrical shape that is open at one end in the axial direction and closed at the other end. The first case 407 and the second case 408 are disposed on the same axis and are engaged with each other by an adhesive or the like. A printed wiring board 406 on which electronic components are mounted is accommodated in the second case 408 and fixed with an adhesive or the like. A ferrite core 405 is housed and fixed in the first case 407.

  The ferrite core 405 has, for example, a cylindrical shape, and the core body 402 is inserted into the cylindrical hole 405a. And the instruction | indication part 402a of the core body 402 protrudes from the axial direction one end side of the ferrite core 405. As shown in FIG. Further, a position indicating coil 403 constituting a resonance circuit is wound around and mounted on the outer periphery of the ferrite core 405. Both ends (not shown) of the position indicating coil 403 are electrically connected to electronic components on the printed wiring board 406.

  In this example, the pressure sensing semiconductor device 404 uses the pressure sensing semiconductor device 100D of the embodiment shown in FIG.

  That is, in the example of FIG. 17, the pressure sensing semiconductor device 404 incorporating the pressure sensing chip 4041 is attached to the end of the printed wiring board 406 located on the core body 402 side as shown in FIG. It has been. That is, as shown in FIG. 17, the pressure sensing semiconductor device 404 includes lead terminals 4042 and 4043 having shapes corresponding to the lead terminals 31D and 32D shown in FIG. At each end of the printed wiring board 406, each surface of the printed wiring board 406 is sandwiched between lead terminals 4042 and 4043 on one side and dummy terminals (not shown) on the other side. The pressure sensing semiconductor device 404 is attached in a state where the bottom surface side of the package is pressed against the end surface of the printed wiring board 406.

  The lead terminals 4042 and 4043 are soldered to the conductor patterns 406a and 406b formed on the printed wiring board 406, respectively. The printed wiring board 406 is provided with a plurality of capacitors 406c having the fixed capacitance described above. The plurality of capacitors 406c are connected in parallel between the conductor patterns 406a and 406b. The conductor patterns 406a and 406b are electrically connected to one end and the other end of the position indicating coil 403, although not shown. In this way, the pressure sensing semiconductor device 404 receives the pressing force in the axial direction of the case 401 from the core body 402 and can change the capacitance Cv of the pressure sensing chip 4041 with respect to the printed wiring board 406. Fixed and attached.

  The core body 402 is made of a rod-shaped member and is housed in the case 401 along the axial direction of the case 401. The core body 402 includes an instruction portion 402a that serves as a pen tip at one end in the axial direction, and a shaft portion 402b formed continuously from the instruction portion 402a. The instruction part 402a is formed in a substantially conical shape. When the core body 402 is accommodated in the case 401, the instruction unit 402a protrudes outward from the opening 407a of the first case 407.

  And the other end side of the core body 402 which has the instruction | indication part 402a in one end is fitted by the press body 409. FIG. That is, the pressing body 409 has a columnar shape, and includes a fitting concave hole 409 c into which the other end side of the core body 402 is fitted in the axial direction of the core body 402. And the protrusion part 409a, 409b inserted in the notch part 410a, 410b which has predetermined | prescribed length in the axial direction of the case 401 formed in the side surface of the holding | maintenance part 410 in the side peripheral part of the press body 409. Is formed. The pressing body 409 is configured such that the protrusions 409a and 409b and the cutout portions 410a and 410b are fitted in a cylindrical holding portion 410 fixed to the first case 407, respectively. It is stored so that it can move in the direction. Therefore, the pressing body 409 has the shaft 401 of the case 401 within the length of the notches 410a and 410b of the holding portion 410 in a state where the protrusions 409a and 409b are inserted into the notches 410a and 410b. It can move in the direction.

  Further, the pressing body 409 is further inserted into the concave hole of the pressure sensing semiconductor device 404 (see the concave hole 23 in FIG. 8), and presses the first electrode 1 of the pressure sensing chip 4041 toward the space 5. A projection 409d is provided.

  Since the position indicator 400 is configured as described above, when the user holds the position indicator 400 in his / her hand and makes contact with the detection unit 502 of the position detection device 500 and presses it, the core body 402 becomes the case 401. Accordingly, the protrusion 409 d of the pressing body 409 presses the first electrode 1 of the pressure sensing chip 4041 of the pressure sensing semiconductor device 404 in the direction of the space 5. Therefore, a pressing force corresponding to the writing pressure applied to the core body 402 is applied to the first electrode 1 of the pressure sensing chip 4041 of the pressure sensing semiconductor device 404, and the electrostatic capacitance Cv of the pressure sensing chip 4041 is the writing pressure. It changes according to.

  As a result, the resonance frequency of the resonance circuit of the position indicator 400 changes. The position detection device 500 detects a change in the resonance frequency of the resonance circuit of the position indicator 400 to detect the writing pressure applied to the position indicator 400 as described below.

[Circuit Configuration for Position Detection and Pen Pressure Detection in Position Detection Device 500]
Next, a circuit configuration example in the position detection apparatus 500 that detects the indicated position and the writing pressure using the position indicator 400 of the above-described embodiment will be described with reference to FIG. FIG. 18 is a block diagram illustrating a circuit configuration example of the position indicator 400 and the position detection device 500.

  The position indicator 400 has a circuit configuration in which a position indicating coil 403, a variable capacitor Cv formed of a pressure sensing chip 4041, and a fixed capacitor Cf including a plurality of fixed capacitors 406c are connected in parallel. A resonance circuit is provided.

  On the other hand, in the position detection device 500, a position detection coil 510 is formed by laminating an X-axis direction loop coil group 511 and a Y-axis direction loop coil group 512. Each loop coil group 511, 512 is composed of, for example, n and m rectangular loop coils, respectively. Each loop coil which comprises each loop coil group 511,512 is arrange | positioned so that it may overlap in order along with equal intervals.

  The position detection apparatus 500 is provided with a selection circuit 513 to which the X-axis direction loop coil group 511 and the Y-axis direction loop coil group 512 are connected. The selection circuit 513 sequentially selects one loop coil from the two loop coil groups 511 and 512.

  Further, the position detection device 500 includes an oscillator 521, a current driver 522, a switching connection circuit 523, a reception amplifier 524, a detector 525, a low-pass filter 526, a sample hold circuit 527, and an A / D conversion. A circuit 528, a synchronous detector 529, a low-pass filter 530, a sample hold circuit 531, an A / D conversion circuit 532, and a processing control unit 533 are provided.

  The oscillator 521 generates an AC signal having a frequency f0. The oscillator 521 supplies the generated AC signal to the current driver 522 and the synchronous detector 529. The current driver 522 converts the AC signal supplied from the oscillator 521 into a current and sends it to the switching connection circuit 523. The switching connection circuit 523 switches the connection destination (transmission side terminal T, reception side terminal R) to which the loop coil selected by the selection circuit 513 is connected under the control of the processing control unit 533 described later. Among the connection destinations, a current driver 522 is connected to the transmission side terminal T, and a reception amplifier 524 is connected to the reception side terminal R.

  The induced voltage generated in the loop coil selected by the selection circuit 513 is sent to the reception amplifier 524 via the selection circuit 513 and the switching connection circuit 523. The reception amplifier 524 amplifies the induced voltage supplied from the loop coil and sends it to the detector 525 and the synchronous detector 529.

  The detector 525 detects the induced voltage generated in the loop coil, that is, the received signal, and sends it to the low-pass filter 526. The low-pass filter 526 has a cutoff frequency sufficiently lower than the frequency f0 described above, converts the output signal of the detector 525 into a DC signal, and sends it to the sample hold circuit 527. The sample hold circuit 527 holds a voltage value at a predetermined timing of the output signal of the low-pass filter 526, specifically at a predetermined timing during the reception period, and sends it to an A / D (Analog to Digital) conversion circuit 528. . The A / D conversion circuit 528 converts the analog output of the sample hold circuit 527 into a digital signal and outputs the digital signal to the processing control unit 533.

  On the other hand, the synchronous detector 529 synchronously detects the output signal of the reception amplifier 524 with the AC signal from the oscillator 521 and sends a signal having a level corresponding to the phase difference therebetween to the low-pass filter 530. This low-pass filter 530 has a cutoff frequency sufficiently lower than the frequency f 0, converts the output signal of the synchronous detector 529 into a DC signal, and sends it to the sample hold circuit 531. The sample hold circuit 531 holds the voltage value at a predetermined timing of the output signal of the low-pass filter 530 and sends it to an A / D (Analog to Digital) conversion circuit 532. The A / D conversion circuit 532 converts the analog output of the sample hold circuit 531 into a digital signal and outputs the digital signal to the processing control unit 533.

  The process control unit 533 controls each unit of the position detection device 500. That is, the process control unit 533 controls the selection of the loop coil in the selection circuit 513, the switching of the switching connection circuit 523, and the timing of the sample hold circuits 527 and 531. The processing control unit 533 causes the X-axis direction loop coil group 511 and the Y-axis direction loop coil group 512 to transmit radio waves with a certain transmission duration based on input signals from the A / D conversion circuits 528 and 532.

  An induced voltage is generated in each loop coil of the X-axis direction loop coil group 511 and the Y-axis direction loop coil group 512 by radio waves transmitted from the position indicator 400. The process control unit 533 calculates the coordinate value of the indicated position in the X-axis direction and the Y-axis direction of the position indicator 400 based on the level of the voltage value of the induced voltage generated in each loop coil. Further, the processing control unit 533 detects the writing pressure based on the level of a signal corresponding to the phase difference between the transmitted radio wave and the received radio wave.

  Thus, in the position detection device 500, the position of the approaching position indicator 400 can be detected by the processing control unit 533. In addition, by detecting the phase of the received signal, information on the pen pressure value of the position indicator 400 can be obtained.

[Other Embodiments or Modifications]
In the pressure sensing device of the first embodiment described above, the package 20 is integrally formed by filling the recess 21a provided in the package member 21 with silicon rubber as an example of the elastic member 22 as a pressure transmission member. However, as shown in FIG. 19, the package 20 may be divided into an upper member and a lower member, and the upper member and the lower member may be fixed by heat welding or the like. . FIG. 19 shows a case in which this modification is applied to the pressure sensing device 100A in the example of FIG. 6A. The same reference numerals are given to the same parts as those in FIG. Detailed description is omitted.

  That is, in the pressure sensing device shown in FIG. 19A, the package 20 is divided into an upper package member 21UP1 and a lower package member 21DW1. The upper package member 21UP1 is formed with a recess 21UP1a corresponding to the aforementioned recess 21a, and an elastic member 22UP made of, for example, silicon rubber as a pressure transmitting member is disposed in the recess 21UP1a. In the case of this example, as shown in FIG. 19A, the elastic member 22UP slightly protrudes from the recess 21UP1a toward the first electrode 1 side of the pressure sensing chip 10. In the upper package member 21UP1, a communication hole 23 into which the rod-shaped protruding member 300 is inserted is formed by the through hole 21UP1b of the package member 21UP1 and the concave hole 22UPa formed in the elastic member 22UP.

  On the other hand, the lower package member 21DW1 houses the pressure sensing chip 10 in the state where the one surface 1a side of the first electrode 1 is exposed. Then, the lower package member 21DW1 derives the lead terminal 31 and the lead terminal 32 as described above. In this case, in this example, in the lower package member 21DW1, the recess 21DW1a in which the protruding elastic member 22UP of the upper package member 21UP1 is just fitted is formed on the one surface 1a of the first electrode 1 of the pressure sensing chip 10. The one surface 1a is formed as an exposed bottom portion.

  In the pressure sensing device of the example of FIG. 19A, the upper package member 21UP1 and the lower package member 21DW1 configured as described above are such that the protruding portion of the elastic member 22UP of the upper package member 21UP1 is the lower package member. The two are fixed and integrated with each other by heat welding or the like so as to fit into the recess 21DW1a of 21DW1. Thereby, one package 20 is constituted as a whole. In the example of FIG. 19A, the bottom surface of the lower package member 21DW1 constitutes the bottom surface 20b of the package 20. When the pressure sensing device is fixed to the printed wiring board on the bottom surface 20b, The positioning projection 24 is formed.

  The upper package member 21UP1 and the elastic member 22UP are configured as separate members, but the upper package member 21UP1 and the elastic member 22UP are configured integrally with the same member, for example, a resin member such as silicon rubber. The pressure transmission member may be a single member.

  The example of FIG. 19A is a case where an elastic member 22UP is provided on the upper package member 21UP1 side as a pressure transmission member. On the other hand, FIG. 19B shows the case where the elastic member is provided on the lower package member side.

  That is, in the example of FIG. 19B, the package 20 is divided into an upper package member 21UP2 and a lower package member 21DW2. The lower package member 21DW2 includes the lower package member 21DW1 shown in FIG. On the top, an elastic member 22DW made of, for example, silicon rubber is attached so as to be opposed to the first surface 1a of the first electrode 1 of the pressure sensing chip 10. A recess 22DW constituting the tip of the communication hole 23 is formed on the elastic member 22DW of the lower package member 21DW2 above the first electrode 1 of the pressure sensing chip 10.

On the other hand, the upper package member 21UP2 includes a through hole 21UP2b that forms the communication hole 23 together with the recess 22DWa of the elastic member 22DW. The upper package member 21UP2 and the lower package member 21DW2 are coupled and fixed so that a communication hole 23 is formed by the through-hole 21UP2b and the recess 22DWa of the elastic member 22DW.
In the example shown in FIG. 19B, the upper package member 21UP2 and the elastic member 22DW are configured as separate members. However, the upper package member 21UP2 is the same member as the elastic member 22DW, for example, a resin such as silicon rubber. It can also be set as the pressure transmission member comprised from one member by setting it as a member.

  Next, in the pressure sensing chip 10 of the pressure sensing semiconductor device of the above-described embodiment, the space 5 is formed as a circular space by the circular recess 4, but the shape of the space is not limited to a circle. Needless to say.

  In the above description, the application example of the pressure sensing semiconductor device according to the present invention is used for detecting the writing pressure of the position indicator of the position detecting device. However, the application example of the pressure sensing semiconductor device according to the present invention is not limited to this, and can be applied to all apparatuses and electronic devices that use a capacitance change corresponding to the pressing force.

  In the above example, the pressure sensing chip is configured only with a variable capacitor. However, a series or parallel capacitor may be formed by a semiconductor process with respect to the variable capacitor. Furthermore, the pressure sensing chip has a configuration in which a signal processing circuit to be connected to a single capacitor or a series or parallel circuit of a capacitor and another capacitor is formed on the same semiconductor chip by a semiconductor process. Needless to say.

  DESCRIPTION OF SYMBOLS 1 ... 1st electrode, 2 ... 2nd electrode, 3 ... Insulating layer, 4 ... Recessed part, 5 ... Space, 10 ... Pressure sensing chip, 20 ... Package, 21 ... Package member, 22 ... Elastic member, 23 ... Recessed part , 100 ... Pressure sensing semiconductor device

Claims (9)

A first electrode; and a second electrode disposed to face the first electrode with a predetermined distance therebetween, and the first electrode according to a pressure applied to the first electrode The capacitance between the first electrode and the second electrode is changed by displacement of the first electrode, and the first electrode and the second electrode are accommodated in a package member. Pressure sensing semiconductor device comprising:
The first electrode is displaced by applying a pressure applied to the core projecting from one end of the position indicator housing to the first electrode, and
The change in the capacitance due to the displacement of the first electrode is based on a change in the distance between the first electrode and the second electrode,
An elastic member is disposed in contact with the surface of the first electrode opposite to the side opposite to the second electrode, and the pressure applied to the core is the elastic member. Is configured to be transmitted to the first electrode via
The package member is formed with a recess so as to open the elastic member disposed on the surface of the first electrode opposite to the side facing the second electrode. ,
A pressure sensing semiconductor device, wherein pressure applied to the core via the recess is transmitted to the first electrode via the elastic member.   The pressure sensing semiconductor device according to claim 1, wherein the elastic member is made of silicon resin.   The pressure sensing semiconductor device according to claim 1, wherein the recess of the package member is formed corresponding to an area of the first electrode.   The concave portion of the package member is configured such that a pressing member for transmitting a pressure applied to the core body to the first electrode through the elastic member is inserted. The pressure sensing semiconductor device according to claim 1.   The concave portion of the package member is configured such that a pressure transmission member for transmitting pressure applied to the core body to the first electrode through the elastic member is inserted. The pressure sensing semiconductor device according to claim 1.   The concave portion of the package member is configured such that a pressure transmission member having a flange portion for transmitting pressure applied to the core body to the first electrode through the elastic member is inserted. And the movement of the pressure transmission member that transmits pressure to the first electrode via the elastic member with respect to the first electrode is a step formed on the side of the package member to which the pressure is transmitted. The pressure sensing semiconductor device according to claim 1, wherein the pressure sensing semiconductor device is configured to be limited by an abutment of the flange portion with respect to a portion. The pressure sensing semiconductor device according to claim 4, wherein the elastic member is configured to elastically hold the pressing member in the recess. A first electrode; and a second electrode disposed to face the first electrode with a predetermined distance therebetween, and the first electrode according to a pressure applied to the first electrode The capacitance between the first electrode and the second electrode is changed by displacement of the first electrode, and the first electrode and the second electrode are accommodated in a package member. Pressure sensing semiconductor device comprising:
The first electrode is displaced by applying a pressure applied to the core projecting from one end of the position indicator housing to the first electrode, and
The change in the capacitance due to the displacement of the first electrode is based on a change in the distance between the first electrode and the second electrode,
An elastic member is disposed in a state of being in contact with a surface of the first electrode opposite to the side facing the second electrode, and the pressure applied to the core body is a pressure transmission. Configured to be transmitted to the elastic member via a member,
The pressure applied to the core is configured to be transmitted to the first electrode via the pressure transmission member and the elastic member, and
The pressure transmission member includes a flange, and the movement of the pressure transmission member with respect to the first electrode is limited by the collision of the flange with the step formed on the side of the package member where the pressure is transmitted. Be done
A pressure sensing semiconductor device characterized by that. The flange portion of the pressure transmission member abuts the stepped portion formed on the package member via an elastic member.
The pressure sensing semiconductor device according to claim 8.

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