JP6116109B1 - Wafer chuck for vacuum prober and vacuum prober device - Google Patents

Abstract

A heat flow generated by a heat exchange metal unit is efficiently transmitted to a wafer. A wafer chuck 100 in which a heat exchange metal unit 30, an insulating layer 20, and a chuck top 10 for fixing a wafer 50 are stacked in this order, and the heat exchange metal unit 30 is disposed between the heat exchange metal unit 30 and the insulating layer 20. , And plate-like metal elastic members 40a and 40b interposed between one or both of the insulating layer 20 and the chuck top 10. Further, the wafer 50 is pressed against the chuck top 10 by the retainer 15, and a nitrogen gas is caused to flow between the chuck top 10 and the wafer 50. [Selection] Figure 3

Description

The present invention relates to a vacuum prober wafer chuck and a vacuum prober apparatus.

2. Description of the Related Art In recent years, electronic control has been performed in many industrial devices and household electrical appliances due to higher performance of semiconductor elements. In particular, semiconductor devices mounted on portable terminal devices and in-vehicle devices are required to operate stably in a wide temperature range from low to high temperatures. Semiconductor device manufacturers conduct temperature characteristics tests at the wafer level. Yes.
This temperature characteristic test applies temperature stress or electrical stress to a wafer fixed on a stage cooled and heated in the range of 4K (−269 ° C.) to + 500 ° C. It measures the temperature dependence of characteristics.

  The heating / cooling stage (hereinafter referred to as “wafer chuck”) used for the temperature characteristic test of the wafer needs to make the temperature of the temperature sensor for controlling the temperature of the heater and the cooler substantially equal to the wafer temperature. . For example, Patent Document 1 discloses a technique in which a high thermal conductivity sheet (carbon sheet) placed on a wafer chuck and a wafer placed on the high thermal conductivity sheet are fixed by a vacuum chuck. The technique of Patent Document 1 reduces the temperature difference between the wafer chuck and the wafer.

JP 2007-288101 A

  Incidentally, the wafer chuck needs to be configured so that current noise generated by the heater does not affect the wafer. For this purpose, the wafer chuck has a ceramic insulating layer inserted between a heat exchanging unit for heating and cooling and a metal chuck top on which the wafer is placed, and an electric circuit is provided between the heat exchanging unit and the chuck top. May provide typical insulation. A temperature sensor for controlling the temperature of the heater or cooler may also generate current noise. For this reason, the temperature sensor may be built in the heat exchange unit without being built in the chuck top.

  By the way, the larger the diameter of the wafer, the more prominent problems of surface warpage and non-flatness (surface accuracy) of the insulating layer and the chuck top. This warpage or non-flatness generates a gap between the heat exchange unit and the insulating image, or between the insulating layer and the chuck top. This gap causes unevenness in the heat conduction from the heat exchange unit to the chuck top, and reduces the heat flow to the chuck top. As a result, the wafer chuck increases the temperature difference between the heat exchange unit and the chuck top or wafer, making temperature control of the chuck top or wafer difficult.

  The technique of Patent Document 1 is a technique for increasing the thermal conductivity between the chuck top, which is the uppermost stage of the wafer chuck, and the wafer. That is, the technique of Patent Document 1 does not consider a wafer chuck in which an insulating layer is inserted between the chuck top and the heat exchange unit. For this reason, the technique of Patent Document 1 cannot solve the unevenness of the heat distribution of the chuck top and cannot efficiently transfer the heat flow generated by the heat exchange unit to the wafer.

The present invention has been made to solve the above problems, provides heat flow generated in the heat exchanger metal units efficiently vacuum prober wafer chuck can be transferred to the wafer, and a vacuum prober The purpose is to do.

In order to achieve the above object, one means of the present invention is a wafer probe for a vacuum prober in which a heat exchange metal unit, an insulating layer, and a chuck top are laminated in this order. A mounting portion for attaching a retainer for holding the gas, and an opening for allowing a gas (for example, nitrogen gas) to flow between the wafer and the chuck top, and between the heat exchange metal unit and the insulating layer, And a plate-like metal elastic member interposed between one or both of the insulating layer and the chuck top .

  As the diameter of the chuck top increases, the problem of warpage and surface accuracy increases. The gas flowing between the wafer and the chuck top fills a gap formed at the boundary between the wafer and the chuck top, and eliminates uneven heat conduction from the chuck top to the wafer. For this reason, the heat flow is efficiently transferred from the heat exchange metal unit to the wafer via the chuck top.

Another means of the present invention is a wafer chuck for a vacuum prober in which a heat exchange metal unit, an electrical insulating layer, and a chuck top for fixing a wafer are laminated in this order, and the heat exchange metal unit A plate-shaped metal elastic member interposed between the electrical insulation layer and between the electrical insulation layer and the chuck top or both, the electrical insulation layer comprising alumina, It is one of sapphire and boron nitride ceramic, and the heat exchange metal unit has a built-in temperature sensor .

  The plate-like metal elastic member (for example, copper mesh) has high thermal conductivity. As for the heat exchange metal unit, the insulating layer, and the chuck top, as the diameter of the wafer increases, the problem of warpage and surface accuracy increases. The plate-like metal elastic member fills the gaps formed at the boundary between the heat exchange metal unit and the insulating layer and the boundary between the insulating layer and the chuck top, and eliminates uneven heat conduction from the heat exchange metal unit to the chuck top. For this reason, the heat flow is efficiently transferred from the heat exchange metal unit to the wafer via the chuck top.

  According to the present invention, the heat flow generated by the heat exchange metal unit can be efficiently transmitted to the wafer.

It is the block diagram of the vacuum prober apparatus which is 1st Embodiment of this invention, and a figure which shows the probing state. It is a top view of the wafer chuck which is a 1st embodiment of the present invention. It is sectional drawing and the front view of the wafer chuck which are 1st Embodiment of this invention. It is the top view, front view, and side view of a retainer. It is the top view which shows the example of the copper mesh of plain weave and twill, and sectional drawing. It is the top view which shows the example of the copper mesh of a plain tatami mat and a twill mat, and sectional drawing.

  Hereinafter, an embodiment of the present invention (hereinafter referred to as “the present embodiment”) will be described in detail with reference to the drawings. In addition, each figure is only shown roughly to such an extent that this embodiment can fully be understood. Moreover, in each figure, the same code | symbol is attached | subjected about the common component and the same component, and those overlapping description is abbreviate | omitted.

FIG. 1A is a configuration diagram of a vacuum prober apparatus according to the first embodiment of the present invention, and FIG. 1B is a diagram showing a probing state.
The vacuum prober apparatus 200 is an apparatus that measures in a wafer state a device that requires a package structure sealed in an airtight or vacuum state. Such devices include MEMS timing devices, RF MEMS timing device switches, angular velocity sensors, and uncooled infrared sensors. These devices require vacuum sealing in order to reduce air resistance during operation, improve mechanical Q value, and improve thermal insulation properties that eliminate heat transfer errors due to gas. The vacuum prober apparatus 200 includes a wafer chuck 100, an XYZθ stage 110, a vacuum chamber 120, an electronic measuring instrument 150, and a probe card 160. The probe card 160 may be a manipulator type.

  The wafer chuck 100 is for mounting and fixing the wafer 50 to be measured on the upper surface thereof. The wafer chuck 100 heats and cools the wafer 50 fixed on the upper surface, and includes a heater 32 and a temperature sensor 33 (FIG. 3B). The XYZθ stage 110 moves the wafer chuck 100 in the XYZθ direction, and moves the wafer 50 as the wafer chuck 100 moves.

  The vacuum chamber 120 accommodates the wafer chuck 100, the XYZθ stage 110, and the probe card 160. The vacuum chamber 120 is for performing measurement in a vacuum. For example, the impedance characteristics of a semiconductor element can be measured in a vacuum environment. The vacuum pump 130 is a device that exhausts air to make the inside of the vacuum chamber 120 vacuum.

  The electronic measuring instrument 150 is, for example, a semiconductor parameter analyzer or an impedance analyzer, and can evaluate a current-voltage characteristic, a voltage-capacitance characteristic, and an impedance characteristic of a semiconductor element. The probe card 160 makes the probe 161 contact a specific part of the wafer 50, applies voltage and current, and measures the voltage, current, and phase of the specific part. The probe card 160 and the electronic measuring instrument 150 are connected via a test cable 165 and a hermetic current introduction terminal (not shown). The probe card 160 and the manipulator (not shown) include a plurality of probes 161.

  In FIG. 1B, a probe 161 is brought into contact with a semiconductor element (for example, a MOS (Metal Oxide Semiconductor) transistor) formed on the wafer 50, and is used for measuring the potential and current of the semiconductor element. .

  A plurality of semiconductor elements are formed on the wafer 50. FIG. 1B shows a state in which the characteristic of any one semiconductor element (MOS transistor) is measured. In the MOS transistor, a drain, a gate, and a source are formed on a substrate (wafer 50), and the potential and current of each part are measured.

  Incidentally, a wafer chuck 101 as a comparative example compared with the wafer chuck 100 of the present embodiment includes a heater 32. For this reason, in the wafer chuck 101 as a comparative example, current noise generated by the heater 32 flows into the probe 161 and may affect the measurement potential of the probe 161.

2 is a plan view of the wafer chuck, FIG. 3A is a cross-sectional view taken along the line AA of the wafer chuck, and FIG. 3B is a front view of the wafer chuck.
Therefore, the wafer chuck 100 of the present embodiment has a basic structure of a three-layer structure including a metal heat exchange unit 30, an insulator 20 as an insulating layer, and a chuck top 10 formed of metal. That is, the insulator 20 prevents current noise generated by the heater 32 from flowing into the wafer 50. Here, the insulator 20 is formed of a ceramic such as alumina.

  Furthermore, in the wafer chuck 100 of the present embodiment, a copper mesh 40a as a wire mesh is inserted between the chuck top 10 and the insulator 20, and a copper mesh 40b is inserted between the insulator 20 and the heat exchange unit 30. This is the characteristic configuration.

  The copper meshes 40a and 40b reduce the contact thermal resistance between the chuck top 10 and the insulator 20 and between the insulator 20 and the heat exchange unit 30, and the temperature between the heat exchange unit 30 and the chuck top 10 is reduced. It is inserted for the purpose of reducing the difference. Moreover, since the copper mesh 40a, 40b has the copper wire (copper thermal conductivity: 398 [W / mK]) knitted into a plate shape, the thickness direction and in-plane thermal conductivity are alumina (thermal Conductivity: higher than 32 [W / mK]).

  5 and 6 are a plan view and a cross-sectional view showing an example of a copper mesh. In particular, FIGS. 5 (a) and 5 (b) show a plain weave, FIGS. 5 (c) and 5 (d) show a twill, FIGS. 6 (a) and 6 (b) show a plain woven, and FIG. ) (D) shows a twill woven. In addition, each figure is described by the close-packed structure, and the vertical line and the horizontal line are bent, but if the space | interval of a vertical line and a horizontal line is expanded, bending will become less.

  The plain weave is the most basic weaving method in which the vertical lines and the horizontal lines are alternately spaced one by one with a certain distance. On the other hand, the twill weave is a weaving method in which vertical lines and horizontal lines maintain a certain distance and cross over each other by two or more. Since twill weaves two lines, the bending angle of the lines increases. Flat tatami weave is a weaving method in which horizontal lines are aligned. A plain woven fabric provides high strength and is suitable for reinforcement. Twill tatami weave is a weaving method in which horizontal lines are aligned so that two or more cross over each other. Compared with other weaving methods, the twill woven fabric can obtain the finest filtration particle size and has a smooth surface.

The copper meshes 40a and 40b of this embodiment are made of plain weave (FIGS. 5A and 5B) in order to increase the number of contact areas 41 and 42 that come into contact with the chuck top 10, the insulator 20, and the heat exchange unit 30. Although adopted, a twill weave, a plain tatami mat, or a twill tatami mat may be used.
In FIG.5 (b), the copper mesh 40 (40a, 40b) is drawn so that it may have thickness t3 3 times the diameter of a vertical line and a horizontal line. However, the thickness t2 of the contact region 41 and the thickness t1 of the contact region 42 are twice the wire diameter. That is, the copper meshes 40a and 40b have a space (t3-t2) in the contact region 41 and a space (t3-t1) in the contact region 42. In other words, the copper mesh 40a, 40b has a property as an elastic member in which the positions of the contact regions 41, 42 can be displaced by a distance (t3-t2) or a distance (t3-t1) in the thickness direction due to the elasticity of the wire. Have. This property as an elastic member is remarkable if the distance between adjacent vertical and horizontal lines is slightly increased.

Here, the description returns to FIGS. The wafer chuck 100 includes a chuck top 10 having a circular shape in cross section, and is provided with a cooling air IN port 36, a cooling air OUT port 35, and a gas introduction port 37. The chuck top 10 has a plurality of nitrogen outlets 11 and a plurality of retainer tap holes 12 arranged radially. The nitrogen outlet 11 is an opening that emits nitrogen gas (N ₂ ). The nitrogen gas flows between the chuck top 10 and the wafer 50 (see FIG. 3A) and stays in a gap formed between the chuck top 10 and the wafer 50. A completely vacuum void does not transmit heat flow, but a void in which nitrogen gas stays transmits heat flow. For this reason, the nitrogen gas has an effect of reducing a temperature difference between the chuck top 10 and the wafer 50 due to the flow thereof. The emitted nitrogen gas is collected by the vacuum pump 130 (FIG. 1).

The plurality of nitrogen outlets 11 emit inexpensive nitrogen gas (N ₂ ) as an inert gas (in a broad sense), but a rare gas (in a narrow sense, an inert gas) such as argon (Ar) or helium (He). ) May be emitted. Further, the wafer chuck 100 is provided with a gas introduction port 37 (FIG. 2) for introducing nitrogen gas. The retainer tap hole 12 is a tap hole for fixing the retainer 15 as an attachment portion with the ceramic bolts 60 a and 60 b, and is provided to hold the wafer 50 with the retainer 15.

FIG. 4 is a plan view, a front view, and a side view of the retainer.
The retainer 15 is an elastic member such as a substantially rectangular plate-like resin, metal, or ceramic in a plan view having a length L, a width W, and a thickness t. The retainer 15 has a long hole 15a formed on one end side in the longitudinal direction, and a notch 15b formed on one surface side of the other end side.

  The retainer 15 is fixed to the chuck top 10 by inserting an M3 flat head screw into the elongated hole 15a. The notch 15b is notched to a length L1 and a depth t1. Between the notch 15 b and the upper surface of the chuck top 10 is a space into which the outer periphery of the wafer 50 is inserted. In other words, the retainer 15 fixes the chuck top 10 so as to be movable in a radial direction within a horizontal plane, and holds the wafer 50 by the notch 15b. Here, in FIG. 3, the wafer 50 and the retainer 15 are drawn away from the upper surface of the chuck top 10 in order to emphasize the flow of nitrogen. Since the retainer 15 is an elastic member such as resin, the wafer 50 can be clamped to the chuck top 10 by setting the depth t1 of the notch 15b to be smaller than the thickness of the wafer 50.

  The insulator 20 is an insulator that is electrically insulated, and is formed of a ceramic such as alumina. The insulator 20 has a nitrogen flow hole 21 in the center. The nitrogen flow holes 21 communicate with the plurality of nitrogen outlets 11 of the chuck top 10. The diameter of the nitrogen flow hole 21 is different between the boundary portion with the chuck top 10 and the boundary portion with the heat exchange unit 30. An O-ring 65 is disposed on the outer periphery of the nitrogen flow hole 21 at the boundary between the chuck top 10 and the insulator 20. An O-ring 66 is disposed on the outer periphery of the nitrogen flow hole 21 at the boundary between the insulator 20 and the heat exchange unit 30. The O-rings 65 and 66 prevent nitrogen gas from leaking from the nitrogen flow hole 21 to the copper meshes 40a and 40b.

  The insulator 20 has a plurality of bolt holes 20a and a plurality of bolt holes 20b. The bolt hole 20a is a hole that is fixed to the heat exchange unit 30 with the ceramic bolt 60a. The bolt hole 20b is a hole that is fixed to the chuck top 10 with a ceramic bolt 60b. The heat exchange unit 30 has a plurality of bolt tap holes 30a that correspond to the bolt holes 20b, and the chuck top 10 has the retainer tap holes 12 for bolts that correspond to the bolt holes 20a. Also serves as a tap hole.

  The heat exchange unit 30 is made of metal and includes a heating unit 38 and a cooling unit 39. The heating unit 38 includes a heater 32 and a temperature sensor 33 (see FIG. 3B). The cooling unit 32 cools the casing heated by the heater 32 by air, and is provided with cooling air ports 35 and 36.

  The heat exchange unit 30 is provided with a plurality of nitrogen flow holes 31 through which nitrogen gas flows so as to avoid the temperature sensor 33 in the center. The plurality of nitrogen flow holes 31, 31,... Communicate with the large diameter side of the nitrogen flow hole 21 of the insulator 20. The heat exchange unit 30 has a plurality of bolt tap holes 30a, and is fixed to the insulator 20 with ceramic bolts 60a.

  In addition, the temperature sensor 33 can keep the temperature of the chuck top 10 at the target temperature when the temperature sensor 33 is built in the chuck top 10 rather than the heat exchange unit 30. However, since the temperature sensor 33 can also be a noise source of current noise, the wafer chuck 100 of the present embodiment incorporates the temperature sensor 33 on the insulator 20 side in the center of the heating unit 31.

  As described above, in the wafer chuck 100 of the present embodiment, the copper mesh 40a is interposed between the chuck top 10 and the insulator 20, and the copper mesh 40b is interposed between the insulator 20 and the heat exchange unit 30. ing. With the copper meshes 40a and 40b, the wafer chuck 100 reduces the contact thermal resistance and reduces the temperature difference between the heat exchange unit 30 and the chuck top 10.

  By the way, as the diameter of the wafer 50 becomes larger, the surface of the chuck top 10, the insulator 20, and the heat exchange unit 30 are more prone to problems of surface warpage and non-flatness. For this reason, in the wafer chuck 101 of the comparative example, gaps are likely to be generated on the bonding surface between the chuck top 10 and the insulator 20 and the bonding surface between the insulator 20 and the heat exchange unit 30. Since heat conduction does not occur when the gap is in a vacuum, the wafer chuck 101 of the comparative example has a problem that unevenness in heat conduction occurs between a portion where the gap exists and a portion where there is no gap. Due to this uneven heat conduction, the heat flow is not efficiently transmitted from the heat exchange unit 30 to the chuck top 10 in the wafer chuck 101 of the comparative example, and the temperature of the chuck top 10 is difficult to rise or fall.

  For this reason, in the wafer chuck 101 of the comparative example, since the upper surface temperature of the heat exchange unit 30 and the temperature of the chuck top 10 are different, a temperature sensor 33 for controlling the temperature of the heat exchange unit 30 is incorporated in the chuck top 10. It was necessary to control the temperature based on the temperature of the chuck top 10.

  In this respect, in the wafer chuck 100 of the present embodiment, copper meshes 40 a and 40 b are interposed on the bonding surface between the chuck top 10 and the insulator 20 and the bonding surface between the insulator 20 and the heat exchange unit 30. For this reason, the wafer chuck 100 improves the problem of uneven heat conduction as compared with the wafer chuck 101 of the comparative example. Therefore, in the wafer chuck 100, the heat flow is efficiently transmitted from the heat exchange unit 30 to the chuck top 10, and the temperature of the temperature sensor 33 built in the heat exchange unit 30 approximates the temperature of the chuck top 10.

  Further, in the vacuum prober apparatus 200 (FIG. 1) of this embodiment, the thermal conductivity is improved as compared with that in the vacuum by passing a nitrogen gas between the chuck top 10 and the wafer 50. That is, in the wafer chuck 100, the temperature of the temperature sensor 33 built in the heat exchange unit 30 is approximate to the temperature of the wafer 50. Therefore, the wafer chuck 100 of the present embodiment can incorporate the temperature sensor 33 in the heat exchange unit 30 so that the current noise of the temperature sensor 33 does not affect the probe 161 (FIG. 1).

  By the way, between the chuck top 10 and the wafer 50, the warpage of the wafer due to temperature change, the biting of dust between the chuck top and the wafer, the scratch on the chuck top, the warpage of the chuck due to temperature change, the flatness of the back surface of the wafer. Thus, a vacuum space is formed. Here, a carbon sheet or an indium sheet that is a soft metal (thermal conductivity: 81.7 [W / mK]) is inserted between the chuck top 10 and the wafer 50 to fill the air gap and improve thermal conduction. It is possible to make it. However, indium has a low melting point of 156.4 ° C. and has a problem that it cannot be used for a high temperature test of + 200 ° C. or higher. In addition, the carbon sheet has a resistance value of about several ohms, and in a semiconductor element having a structure such as a power semiconductor with the back surface of the wafer as an electrode, this resistance value has an adverse effect on the electrical measurement test result. Has a point. In addition, since the vacuum prober apparatus 200 of this embodiment places the wafer 50 on the chuck top 10 in a vacuum, the wafer 50 is fixed by a retainer 15 as an attachment portion without using a vacuum chuck.

By the way, the Young's modulus E of copper is 110 [× 10 ⁹ N / m ² ], and the Young's modulus of indium is higher than 10.8 [× 10 ⁹ N / m ² ]. Since the metal mesh (copper mesh 40) is formed by arranging a plurality of bent wires at predetermined intervals (equal intervals), the line length L per unit length is long and the cross-sectional area A per one is small. Therefore, the spring constant K = EA / L of the metal mesh is smaller than that of the plate material.

(Modification)
The present invention is not limited to the embodiments described above, and various modifications such as the following are possible.
(1) In the wafer chuck 100 of the above embodiment, the copper meshes 40a and 40b are inserted between the chuck top 10 and the insulator 20 and between the insulator 20 and the heat exchange unit 30, but copper ( Thermal conductivity: 398 [W / mK], Young's modulus: 110 [× 10 ⁹ N / m ² ]), iron (thermal conductivity: 80.3 [W / mK]), Young's modulus: 200 [× 10 ⁹ N / m ² ]), stainless steel, aluminum (thermal conductivity: 237 [W / mK], Young's modulus: 68.3 [× 10 ⁹ N / m ² ]), and plated products thereof. The metal mesh (wire net) used may be used.

(2) The insulator 20 of the above embodiment has high electrical insulation and is made of the most versatile alumina ceramic among ceramics. However, the sapphire has high electrical insulation and an allowable thermal conductivity. Alternatively, it may be formed of boron nitride ceramic. Even in this case, the gaps between the chuck top 10 and the insulator 20 and between the insulator 20 and the heat exchange unit 30 are not changed. For this reason, the wafer chuck using sapphire or boron nitride ceramic has an effect of thermally conducting the gap by inserting the copper meshes 40a and 40b as plate-like metal elastic members.

(3) Although the heat exchanging unit 30 of the embodiment includes the heating unit 38 using the heater 32 and the cooling unit 39 through which cooling air flows, for example, a Peltier element may be used.

10 Chuck top 11 Nitrogen outlet (opening)
12 Retainer tap hole 15 Retainer (Mounting part)
20 Insulator (insulating layer)
21 Nitrogen flow hole 30 Heat exchange unit (heat exchange metal unit)
31 Nitrogen flow hole 32 Heater 33 Temperature sensor 35, 36 Cooling air port 37 Gas introduction port 40, 40a, 40b Copper mesh (plate-like metal elastic member, wire mesh)
50 Wafer 100, 101 Wafer chuck (wafer chuck for vacuum prober)
110 XYZθ stage 120 Vacuum chamber 130 Vacuum pump 150 Electronic measuring instrument 160 Probe card 161 Probe 200 Vacuum prober device

Claims (5)

A wafer chuck for a vacuum prober in which a heat exchange metal unit, an insulating layer, and a chuck top are laminated in this order ,
The chuck top is
A mounting portion for attaching a retainer for fixing the wafer;
An opening for allowing gas to flow between the wafer and the chuck top ;
A plate-shaped metal elastic member inserted between one or both of the heat exchange metal unit and the insulating layer and between the insulating layer and the chuck top is further provided. Wafer chuck for vacuum probers . A temperature-controlled vacuum prober wafer chuck in which a heat exchange metal unit, an electrical insulating layer, and a chuck top to which a wafer is fixed are laminated in this order,
A plate-shaped metal elastic member interposed between one or both of the heat exchange metal unit and the electrical insulation layer and between the electrical insulation layer and the chuck top ;
The electrically insulating layer is any one of alumina, sapphire, and boron nitride ceramic,
The wafer chuck for a vacuum prober, wherein the heat exchange metal unit includes a temperature sensor . A wafer chuck for a vacuum prober according to claim 1 or 2 ,
2. The wafer chuck for a vacuum prober , wherein the plate-like metal elastic member is a wire mesh. A vacuum prober apparatus having a wafer chuck in which a heat exchange metal unit, an electrical insulating layer, and a chuck top are laminated in this order,
A plate-shaped metal elastic member interposed between one or both of the heat exchange metal unit and the electrical insulation layer and between the electrical insulation layer and the chuck top ;
The electrically insulating layer is any one of alumina, sapphire, and boron nitride ceramic,
The vacuum prober device , wherein the heat exchange metal unit includes a temperature sensor . A vacuum prober apparatus having a wafer chuck in which a heat exchange metal unit, an insulating layer, and a chuck top are laminated in this order ,
The chuck top is
A mounting portion for attaching a retainer for fixing the wafer;
And a opening for flow through the gas between the chuck top and the wafer,
A plate-shaped metal elastic member inserted between one or both of the heat exchange metal unit and the insulating layer and between the insulating layer and the chuck top is further provided. A vacuum prober device.

Images