JP6115366B2 - Prediction device, prediction program, and prediction method - Google Patents

Description

  The present invention relates to a prediction device, a prediction program, and a prediction method.

  Semiconductor integrated circuits used in various electronic devices are manufactured by various manufacturing methods. An example of a method for manufacturing a semiconductor integrated circuit will be described. FIG. 14 is a diagram illustrating an example of a method of manufacturing a semiconductor integrated circuit. As shown in FIG. 14, an insulating layer such as an oxide is repeatedly exposed to a wiring pattern, etched to form a wiring groove, plated to deposit copper, and polished to remove excess copper. By constructing, a semiconductor integrated circuit is manufactured.

  In recent years, in copper wiring, ECP (Electro-Chemical Plating) in which wiring grooves are formed on an insulator, copper plating is performed on the wiring grooves, and the wiring grooves are filled with copper has been the mainstream. However, since the entire upper surface of the insulator as well as the wiring groove is covered with copper, CMP (Chemical Mechanical Polishing) is used for polishing to expose the wiring pattern.

  As a result of this CMP, there is a case where a phenomenon called EOE (Edge Over Erosion) occurs in which a certain region is sharply cut. EOE tends to occur when the polishing rate difference between a plurality of materials to be polished is large and the density distribution of materials is uneven. When EOE occurs, the performance of the semiconductor integrated circuit may deteriorate and the yield may decrease. FIG. 15 is a diagram illustrating an example where EOE occurs as a result of CMP. In the example of FIG. 15, EOE occurs in the region where the copper density is high at the boundary between the region where the copper density is high (Cu high density region) and the region where the copper density is low (Cu low density region). An example will be shown.

JP-A-11-265866 JP 2006-72938 A

  Here, it is conceivable to simulate the CMP in the manufacturing process of the semiconductor integrated circuit and predict the occurrence of EOE before manufacturing the semiconductor integrated circuit. For example, it is conceivable to divide a semiconductor integrated circuit model into a plurality of meshes, select a mesh, and predict the occurrence of EOE by the following method. That is, when the copper density of the selected mesh is higher than the average value of the copper densities of a plurality of meshes existing within a predetermined range of the selected mesh, it can be predicted that EOE has occurred in the selected mesh. Conceivable.

  In the technique for predicting the occurrence of EOE described above, the average value of the copper densities of a plurality of meshes existing within a predetermined range of the selected mesh is compared with the copper density of the selected mesh. However, among the multiple meshes that exist within the selected range of the selected mesh, there is a mesh that is not related to the occurrence of EOE in the selected mesh and that is related to the occurrence of EOE in other meshes other than the selected mesh. There is a case. Therefore, in the technique for predicting the occurrence of EOE described above, the average value of the copper density of a plurality of meshes including a mesh not related to the occurrence of EOE in the selected mesh is compared with the copper density of the selected mesh. There is a case. Therefore, in such a case, the accuracy of prediction regarding the occurrence of EOE may be reduced.

  In one aspect, an object of the present invention is to suppress a decrease in prediction accuracy regarding occurrence of EOE.

  In one aspect, the prediction device includes a dividing unit, a calculating unit, a selecting unit, a specifying unit, and an output unit. The dividing unit divides a predetermined surface of a circuit model having a plurality of surfaces and a substrate having a groove formed in a predetermined surface of the plurality of surfaces and a wiring provided in the groove into a plurality of meshes. . The calculation unit calculates the wiring density in each of the plurality of meshes. The selection unit selects a plurality of first meshes, which are meshes having a wiring density higher than the first predetermined value, from the plurality of meshes by a density higher than the wiring density in the adjacent mesh. The specifying unit specifies the first mesh having the shortest distance from the plurality of first meshes for each of the plurality of second meshes that are meshes other than the first mesh among the plurality of meshes. For each of the plurality of first meshes, the output unit adds EOE (Edge Over Erosion) to the first mesh when the area of the second mesh as described below is equal to or greater than a third predetermined value. ) Is output. The area of the second mesh here is that of the second mesh whose wiring density is less than or equal to the second predetermined value among the second mesh specified by the specifying unit when the distance is closest to the first mesh. It is an area.

  It is possible to suppress a decrease in prediction accuracy for the occurrence of EOE.

FIG. 1 is a diagram illustrating an example of a functional configuration of the prediction apparatus according to the embodiment. FIG. 2 is a diagram illustrating an example of a data structure of mesh data. FIG. 3 is a diagram illustrating an example of a data structure of the high-density mesh list. FIG. 4 is a diagram for explaining an example of processing for dividing a substrate into a plurality of meshes. FIG. 5 is a diagram for explaining an example of processing for selecting a high-density mesh. FIG. 6 is a diagram for explaining an example of a process for grouping each high-density mesh so as to belong to any one of a plurality of groups. FIG. 7A is a diagram for explaining a possibility that EOE occurs. FIG. 7B is a diagram for explaining the possibility of occurrence of EOE. FIG. 8 is a diagram for explaining an example of processing for creating a discrete Voronoi diagram. FIG. 9 is a diagram for explaining an example of processing executed by the determination unit. FIG. 10 is a diagram for explaining an example of processing executed by the determination unit. FIG. 11 is a flowchart illustrating the procedure of the prediction process according to the embodiment. FIG. 12 is a flowchart illustrating a procedure of EOE prediction processing according to the embodiment. FIG. 13 is a diagram illustrating a computer that executes a prediction program. FIG. 14 is a diagram illustrating an example of a method of manufacturing a semiconductor integrated circuit. FIG. 15 is a diagram illustrating an example where EOE occurs as a result of CMP.

  Hereinafter, embodiments of a prediction apparatus, a prediction program, and a prediction method disclosed in the present application will be described in detail with reference to the drawings. The embodiments do not limit the disclosed technology.

[Example of functional configuration of prediction device]
FIG. 1 is a diagram illustrating an example of a functional configuration of the prediction apparatus according to the embodiment. As illustrated in the example of FIG. 1, the prediction device 10 includes an input unit 11, a display unit 12, a storage unit 13, and a control unit 14.

  The input unit 11 inputs various information to the control unit 14. For example, the input unit 11 receives an instruction for executing a prediction process described later from the user of the prediction device 10 and inputs the received instruction to the control unit 14. Examples of the device of the input unit 11 include a mouse and a keyboard.

  The display unit 12 displays various information. For example, the display unit 12 displays a model of a semiconductor integrated circuit in which a mesh portion where an EOE is generated is emphasized under the control of a display control unit 14h described later. Further, the display unit 12 displays various contents of the record in which “1” and the dummy wiring ID are registered in an item of “Dummy change information” described later under the control of the display control unit 14 h described later. An example of the device of the display unit 12 is a liquid crystal display.

  The storage unit 13 stores various information. For example, the storage unit 13 stores semiconductor integrated circuit model data 13a, mesh data 13b, and a high-density mesh list 13c.

  The semiconductor integrated circuit model data 13a is data indicating a model of the semiconductor integrated circuit designed in the design process of the semiconductor integrated circuit. The model of the semiconductor integrated circuit has, for example, a plurality of layers including a plurality of surfaces and an oxide substrate in which a groove is formed on a predetermined surface of the plurality of surfaces and a copper wiring provided in the groove. It is a model of the stacked semiconductor integrated circuit. In the semiconductor integrated circuit model, dummy wirings are provided in each layer. Examples of the format of the semiconductor integrated circuit model data 13a include GDSII and OASYS.

  In the mesh data 13b, for each mesh described later, data relating to the mesh is registered by a dividing unit 14a, a calculating unit 14b, a grouping unit 14d, and a correcting unit 14g described later. FIG. 2 is a diagram illustrating an example of a data structure of mesh data. In the mesh data 13b shown in the example of FIG. 2, data related to one mesh is registered in one record. The mesh data 13b shown in the example of FIG. 2 includes items “layer”, “X coordinate”, “Y coordinate”, “Dens”, “dummy Dens”, “dummy Area”, “Group”, and “Dummy change information”. Have. In the item “layer”, a numerical value indicating the number of the layer on which the mesh is located is registered by the division unit 14a described later. In the item “X coordinate”, the X coordinate value of a predetermined point on the mesh (for example, the point on the mesh closest to the origin O (0, 0)) is registered by the below-described dividing unit 14a. The In the item “Y-coordinate”, a Y-coordinate value of a predetermined point on the mesh (for example, a point on the mesh closest to the origin O) is registered by the below-described dividing unit 14a. In the item “Dens”, the density (%) of copper in the mesh is registered by the calculation unit 14b described later. Here, the density of copper registered in the item “Dens” is the density of two wirings of a wiring through which a current flows and a so-called dummy wiring in the semiconductor integrated circuit. In the item “dummyDens”, the density of dummy wirings in the mesh is registered by the calculation unit 14b described later. In the item “dummyArea”, coordinates for specifying a region where dummy wirings can be placed and an area of the region where dummy wirings can be placed are registered by the calculation unit 14b described later. In the item “Group”, an ID (Identification) for identifying a later-described group to which the mesh belongs is registered by a later-described grouping unit 14d. In the following description, an ID for identifying a group which will be described later is referred to as a “group ID”. The item “Dummy change information” indicates that when a dummy wiring arranged in the mesh is changed, a dummy wiring arranged in the mesh has been changed by the correcting unit 14g described later. 1 ”is registered, and the registration content of the item“ Dummy change information ”is updated. In the “Dummy change information” item, “0” indicating that the dummy wiring has not been changed is registered in advance. Furthermore, in the item “Dummy change information”, an ID for identifying a dummy wiring arranged in the mesh is registered by the correction unit 14g described later. In the following description, an ID for identifying a dummy wiring is referred to as a “dummy wiring ID”.

  In the high-density mesh list 13c, for each high-density mesh described later, data related to the high-density mesh is registered by the selection unit 14c, grouping unit 14d, and determination unit 14f described later. FIG. 3 is a diagram illustrating an example of a data structure of the high-density mesh list. In the high-density mesh list 13c shown in the example of FIG. 3, data related to one high-density mesh described later is registered in one record. The high-density mesh list 13c illustrated in the example of FIG. 3 includes items of “layer”, “X coordinate”, “Y coordinate”, “Group”, and “existence of EOE”. In the item “layer”, a numerical value indicating the number of the layer on which the high-density mesh is located is registered by the selection unit 14c described later. In the item “X coordinate”, the value of the X coordinate of a predetermined point on the high-density mesh (for example, a point on the high-density mesh closest to the origin O) is registered by the selection unit 14c described later. . In the item “Y-coordinate”, the value of the Y-coordinate of a predetermined point on the high-density mesh (for example, a point on the high-density mesh closest to the origin O) is registered by the selection unit 14c described later. . In the “Group” item, the group ID of the group to which the high-density mesh belongs is registered by the grouping unit 14d described later. In the item “existence / non-occurrence of EOE”, “1” indicating that EOE occurs is registered when the determination unit 14f described below predicts that EOE will occur in the high-density mesh. In addition, in the item “existence / non-occurrence of EOE”, “0” indicating that EOE does not occur is registered when the determination unit 14f described later predicts that EOE does not occur in the high-density mesh. .

  The storage unit 13 is, for example, a semiconductor memory device such as a flash memory, or a storage device such as a hard disk or an optical disk.

  The control unit 14 has an internal memory for storing programs defining various processing procedures and control data, and executes various processes using these. As shown in FIG. 1, the control unit 14 includes a dividing unit 14a, a calculating unit 14b, a selecting unit 14c, a grouping unit 14d, a specifying unit 14e, a determining unit 14f, a correcting unit 14g, and a display control unit. 14h.

  The dividing unit 14a divides the predetermined plane described above into a plurality of meshes for each layer with respect to the model of the semiconductor integrated circuit indicated by the semiconductor integrated circuit model data 13a. One aspect of the dividing unit 14a will be described. When the instruction for executing the prediction process is input from the input unit 11, the dividing unit 14 a acquires the semiconductor integrated circuit model data 13 a from the storage unit 13. The dividing unit 14a selects each layer of the model of the semiconductor integrated circuit indicated by the semiconductor integrated circuit model data 13a one by one. And the division part 14a performs the next process, whenever it selects a layer one by one. That is, the dividing unit 14a divides the surface of the selected layer (the substrate on which the copper wiring is provided) provided with the copper wiring into a plurality of meshes. FIG. 4 is a diagram for explaining an example of processing for dividing a substrate into a plurality of meshes. As shown in the example of FIG. 4, the dividing unit 14 a divides the substrate 20 provided with the copper wiring into a plurality of meshes 21. Here, one mesh is, for example, a square having a length 20 (μm) in the X-axis direction × a length 20 (μm) in the Y-axis direction. By performing the processing described above, the dividing unit 14a divides each layer of the model of the semiconductor integrated circuit indicated by the semiconductor integrated circuit model data 13a into a plurality of meshes.

  Then, the dividing unit 14a adds a record to the mesh data 13b for each mesh. Then, for each mesh, the dividing unit 14a registers a numerical value indicating the number of the layer where the mesh is located in the “layer” item of the added record. Further, for each mesh, the dividing unit 14a sets the value of the X coordinate of a predetermined point on the mesh (for example, the point on the mesh closest to the origin O) in the “X coordinate” item of the added record. sign up. For each mesh, the dividing unit 14a sets the value of the Y coordinate of a predetermined point on the mesh (for example, the point on the mesh closest to the origin O) in the item “Y coordinate” of the added record. sign up.

  The dividing unit 14a performs the above-described processing on all the layers, thereby dividing all the layers of the model of the semiconductor integrated circuit into a plurality of meshes, and registers data regarding each mesh in the mesh data 13b.

  The calculation unit 14b calculates the density of copper wiring in each mesh. One aspect of the calculation unit 14b will be described. The calculation unit 14b divides all layers of the semiconductor integrated circuit model into a plurality of meshes by the dividing unit 14a, and registers the data about each mesh in the mesh data 13b. Select one by one. Moreover, whenever the calculation part 14b selects a layer one by one, it calculates the density of the copper wiring in each mesh of the selected layer. The density of the copper wiring is a density of two wirings of a wiring through which a current flows and a so-called dummy wiring in the model of the semiconductor integrated circuit. For example, the calculation unit 14b calculates the copper wiring density in each of all the meshes 21 illustrated in the example of FIG. By performing the processing described above, the calculation unit 14b calculates the density of copper wiring in a plurality of meshes in each layer of the model of the semiconductor integrated circuit.

  Then, the calculation unit 14b calculates the density of dummy wirings in each mesh of the selected layer. Further, the calculation unit 14b specifies coordinates for specifying a region where dummy wirings can be placed in each mesh of the selected layer. As an example of such coordinates, there are the coordinates of the position closest to the origin O of the area where the dummy wiring can be arranged, and the coordinates of the position farthest from the origin O of the area where the dummy wiring can be arranged. In addition, the calculation unit 14b calculates the area of a region where dummy wirings can be placed in each mesh of the selected layer.

  And the calculation part 14b specifies the record corresponding to a mesh from the records of the mesh data 13b for every mesh. And the calculation part 14b registers the density of copper wiring into the item of "Dens" of the specified record for every mesh. Further, the calculation unit 14b registers the density of the dummy wiring in the item “dummyDens” of the specified record for each mesh. Further, the calculation unit 14b sets, for each mesh, the coordinates for specifying the area where the dummy wiring can be placed and the area of the area where the dummy wiring can be placed in the item “dummyArea” of the specified record. sign up.

  For each layer selected by the calculation unit 14b, the selection unit 14c is a mesh having a wiring density higher than the wiring density in the adjacent mesh by a first predetermined value or more from among the plurality of meshes of the selected layer. Select multiple high density meshes. One aspect of the selection unit 14c will be described. The selection unit 14c, for each mesh of the layer selected by the calculation unit 14b, has a copper wiring density, a dummy wiring density, coordinates for specifying an area in which the dummy wiring can be arranged, When the area is registered in the mesh data 13b, the following processing is performed. That is, the selection unit 14c acquires the density of copper wiring of each mesh of the layer selected by the calculation unit 14b from the mesh data 13b. And the selection part 14c selects the high density mesh demonstrated below from the mesh of the layer selected by the calculation part 14b using the acquired density of the copper wiring of each mesh. In other words, the selection unit 14c is a mesh having a wiring density higher than the density of the copper wiring in the adjacent mesh by the first predetermined value or more among the meshes of the selected layers, and the copper wiring A mesh having a density equal to or higher than the second predetermined value is selected as the high density mesh. The selection unit 14c is a mesh having a wiring density higher than the copper wiring density in at least one of the adjacent eight meshes by a first predetermined value and having a copper wiring density. A mesh that is equal to or greater than the second predetermined value is selected as a high-density mesh. Here, the first predetermined value is, for example, 20%, and the second predetermined value is 50%. The values of the first predetermined value and the second predetermined value are predicted. It can be set and changed by the user of the device 10, and any value can be used.

  FIG. 5 is a diagram for explaining an example of processing for selecting a high-density mesh. In the example of FIG. 5, 17 meshes 21 (black meshes) as follows among the meshes 21 (white meshes) of the layers selected by the calculation unit 14 b are selected as the high-density mesh 22 and the selection unit 14 c. Shows the case where is selected. That is, the example of FIG. 4 is a mesh 21 having a wiring density 20% or more higher than the copper wiring density in the adjacent mesh 21 and a copper wiring density 50% or more. The case where the selection part 14c selects as the high-density mesh 22 is shown.

  Then, the selection unit 14c adds a record to the high density mesh list 13c for each high density mesh. Then, the selection unit 14c registers, for each high-density mesh, a numerical value indicating the number of the layer where the high-density mesh is located in the item “layer” of the added record. For each high density mesh, the selection unit 14c sets the X of a predetermined point on the high density mesh (for example, the point on the mesh closest to the origin O) in the “X coordinate” item of the added record. Register the coordinate value. For each high-density mesh, the selection unit 14c adds Y of a predetermined point on the high-density mesh (for example, a point on the mesh closest to the origin O) to the item “Y coordinate” of the added record. Register the coordinate value.

  For each layer selected by the calculation unit 14b, the grouping unit 14d groups each of the plurality of high-density meshes of the selected layer so as to belong to any one of the plurality of groups. One aspect of the grouping unit 14d will be described. FIG. 6 is a diagram for explaining an example of a process for grouping each high-density mesh so as to belong to any one of a plurality of groups. As shown in the example of FIG. 5, when the high-density mesh 22 is selected by the selection unit 14c, the grouping unit 14d includes, for example, four groups in the X-axis direction from the origin O as shown in FIG. A line 23 a parallel to the Y axis is drawn for each mesh 21. Further, the grouping unit 14d draws a line 23b parallel to the X axis for each of the four meshes 21 from the origin O in the Y axis direction. As a result, a plurality of blocks are formed by the lines 23a and 23b. The grouping unit 14d includes a plurality of high-density meshes 22 existing in the same block so that the plurality of high-density meshes 22 existing in the same block formed by the lines 23a and 23b belong to the same group. Are assigned the same group ID.

  For example, in the case shown in the example of FIG. 6, the grouping unit 14d selects records corresponding to each of the three high density meshes 22a, 22b, and 22c existing in the same block 30a in the records of the high density mesh list 13c. Identify from. Then, the grouping unit 14d registers the same group ID “30a” in each “Group” item of the specified record. In the case shown in the example of FIG. 6, the grouping unit 14d specifies a record corresponding to the high density mesh 22d existing in the block 30d from the records of the high density mesh list 13c. The grouping unit 14d registers the group ID “30d” in the “Group” item of the specified record. In the case shown in the example of FIG. 6, the grouping unit 14d identifies the records corresponding to the two high-density meshes 22e and 22f existing in the same block 30f from the records in the high-density mesh list 13c. To do. Then, the grouping unit 14d registers the same group ID “30f” in the item “Group” of each identified record. In the case shown in the example of FIG. 6, the grouping unit 14d records records corresponding to each of the four high density meshes 22g, 22h, 22i, and 22j existing in the same block 30k in the high density mesh list 13c. Identify from the list. Then, the grouping unit 14d registers the same group ID “30k” in each “Group” item of the specified record. Further, in the case shown in the example of FIG. 6, the grouping unit 14d identifies the records corresponding to the two high density meshes 22k and 22l existing in the same block 30l from the records of the high density mesh list 13c. To do. Then, the grouping unit 14d registers the same group ID “30l” in each “Group” item of the specified record. In the case shown in the example of FIG. 6, the grouping unit 14d identifies the records corresponding to the two high-density meshes 22m and 22n existing in the same block 30m from the records in the high-density mesh list 13c. To do. Then, the grouping unit 14d registers the same group ID “30m” in each “Group” item of the specified record. Further, in the case shown in the example of FIG. 6, the grouping unit 14d identifies the records corresponding to the two high density meshes 22o and 22p existing in the same block 30n from the records of the high density mesh list 13c. To do. Then, the grouping unit 14d registers the same group ID “30n” in each “Group” item of the specified record. In the case shown in the example of FIG. 6, the grouping unit 14d specifies a record corresponding to the high density mesh 22q existing in the same block 30s from the records of the high density mesh list 13c. The grouping unit 14d registers the group ID “30s” in the “Group” item of the specified record.

  As described above, by grouping the high-density meshes, processing is performed for each grouped high-density mesh in the specifying unit 14e described later, and thus processing can be easily performed in the specifying unit 14e described later. become able to.

  Here, one reason why EOE is considered to occur will be described. The polishing rate of polishing with an abrasive used in CMP is higher in a region where the density of copper wiring is high than in a region where the density of copper wiring is low. This is because copper is more easily scraped by the abrasive than a substrate made of oxide or the like. Therefore, in CMP, the abrasive that exists on the low-density region of the copper wiring tends to flow into the high-density region of the copper wiring. Then, the abrasive tends to accumulate in a region on the high density side of the boundary portion between the low density region and the high density region. Then, the accumulated abrasive can greatly scrape the area on the high density side of the boundary portion between the low density area and the high density area. As a result, EOE can occur.

  Here, the larger the area of the low-density region, the more abrasive flows into the high-density region, and more abrasive in the region on the high-density side at the boundary between the low-density region and the high-density region. It becomes easy to collect. For this reason, as the area of the low-density region adjacent to the high-density region increases, the possibility that the region on the high-density side of the boundary portion between the low-density region and the high-density region is more greatly scraped increases. Therefore, the larger the area of the low density region, the higher the possibility that EOE will occur in the region on the high density side of the boundary between the low density region and the high density region.

  7A and 7B are diagrams for explaining the possibility that EOE will occur. In the example of FIG. 7A, a region 40b having a low copper wiring density exists next to the region 40a where the copper wiring density is high, and a copper wiring density is adjacent to the region 40b. The case where the area | region 40c which is high-density exists is shown. In the example of FIG. 7B, a region 40e where the density of the copper wiring is low exists next to the region 40d where the density of the copper wiring is high, and the copper wiring density is adjacent to the region 40e. The case where the area | region 40f with a high density exists is shown. Here, the area of the region 40b is larger than the area of the region 40e. Therefore, the possibility that EOE occurs in the high density region 41a at the boundary between the region 40a and the region 40b is the possibility that EOE occurs in the high density region 41b at the boundary between the region 40d and the region 40e. Higher than.

  From the above, if the area of a low-density mesh into which abrasive flows into a certain high-density mesh is greater than or equal to a predetermined value, it is considered that EOE occurs in the high-density mesh. Therefore, in this embodiment, as described below, for each high-density mesh, the area of the low-density mesh that allows the abrasive to flow into the high-density mesh is calculated, and if the calculated area is equal to or greater than a predetermined value, It is predicted that EOE will occur in the high-density mesh.

  The specifying unit 14e specifies a high-density mesh having the shortest distance among the plurality of high-density meshes for each of the meshes other than the high-density mesh among the plurality of meshes of the layer selected by the calculation unit 14b. Further, the specifying unit 14e sets a plurality of high-density meshes belonging to the same group as the same high-density mesh, and for each of the plurality of meshes other than the high-density mesh, the closest distance from the plurality of high-density meshes Specify the density mesh.

  One aspect of the specifying unit 14e will be described. For example, the specifying unit 14e regards a plurality of high-density meshes belonging to the same group as the same high-density mesh, and is a diagram in which meshes other than the high-density mesh indicate which high-density mesh is closer to the area. Create a discrete Voronoi diagram. FIG. 8 is a diagram for explaining an example of processing for creating a discrete Voronoi diagram. As illustrated in the example of FIG. 8, the specifying unit 14e regards the three high-density meshes 22a, 22b, and 22c belonging to the group indicated by the group ID “30a” as the same high-density mesh. Further, the specifying unit 14e regards the two high density meshes 22e and 22f belonging to the group indicated by the group ID “30f” as the same high density mesh. The specifying unit 14e regards the four high density meshes 22g, 22h, 22i, and 22j belonging to the group indicated by the group ID “30k” as the same high density mesh. Further, the specifying unit 14e regards the two high density meshes 22k and 22l belonging to the group indicated by the group ID “30l” as the same high density mesh. Further, the specifying unit 14e regards the two high density meshes 22m and 22n belonging to the group indicated by the group ID “30m” as the same high density mesh. Further, the specifying unit 14e regards the two high density meshes 22o and 22p belonging to the group indicated by the group ID “30n” as the same high density mesh. As a result, the number of high-density meshes includes six high-density meshes regarded as the same high-density mesh, the high-density mesh 22d belonging to the group ID “30d”, and the high-density mesh 22q belonging to the group ID “30s”. It becomes 8 which added two high density meshes.

  And as shown in the example of FIG. 8, the specific | specification part 14e is a figure divided into the area | region which shows which high-density mesh a mesh other than a high-density mesh is near among 8 high-density meshes. Create a discrete Voronoi diagram. By creating such a discrete Voronoi diagram, the specifying unit 14e converts the three high-density meshes 22a, 22b, and 22c regarded as one high-density mesh into the 26 meshes 21 having the closest distance. Specify as a mesh. Thereby, the specific unit 14e has three high density meshes 22a in which the abrasive on the mesh 21 whose wiring density is lower than a predetermined value among the 26 meshes 21 is regarded as one high density mesh in CMP. , 22b, 22c can be specified.

  The specifying unit 14e specifies the high-density mesh 22d as the high-density mesh that is closest to the 56 meshes 21. Thereby, the specifying unit 14e can specify that the polishing agent on the mesh 21 having the wiring density lower than the predetermined value out of the 56 meshes 21 flows into the high-density mesh 22d in the CMP.

  The specifying unit 14e specifies the high-density meshes 22e and 22f regarded as one high-density mesh as the high-density mesh that is closest to the 28 meshes 21. As a result, in the CMP, the specifying unit 14e uses two high-density meshes 22e in which the abrasive on the mesh 21 whose wiring density is lower than a predetermined value among the 28 meshes 21 is regarded as one high-density mesh. , 22f can be specified.

  The specifying unit 14e specifies the four high-density meshes 22g, 22h, 22i, and 22j regarded as one high-density mesh as the high-density mesh that is closest to the 28 meshes 21. As a result, the specific unit 14e uses the high-density meshes 22g, 22h, in which the abrasive on the mesh 21 whose wiring density is lower than a predetermined value among the 28 meshes 21 in CMP is regarded as one high-density mesh. 22i and 22j can be specified.

  The specifying unit 14e specifies the high-density meshes 22k and 22l regarded as one high-density mesh as the high-density mesh that is closest to the 25 meshes 21. As a result, in the CMP, the specifying unit 14e uses two high-density meshes 22k in which the abrasive on the mesh 21 whose wiring density is lower than a predetermined value among the 25 meshes 21 is regarded as one high-density mesh. , 22l can be specified.

  The specifying unit 14 e specifies the high-density meshes 22 m and 22 n regarded as one high-density mesh as the high-density mesh that is closest to the seven meshes 21. As a result, in the CMP, the specifying unit 14e uses two high-density meshes 22m in which the abrasive on the mesh 21 whose wiring density is lower than a predetermined value among the seven meshes 21 is regarded as one high-density mesh. , 22n can be specified.

  The specifying unit 14 e specifies the high-density meshes 22 o and 22 p regarded as one high-density mesh as the high-density mesh that is closest to the 43 meshes 21. As a result, in the CMP, the specifying unit 14e uses two high-density meshes 22o in which the abrasive on the mesh 21 whose wiring density is lower than a predetermined value among the 43 meshes 21 is regarded as one high-density mesh. , 22p can be specified.

  Further, the specifying unit 14e specifies the high-density mesh 22q as a high-density mesh that is closest to the 25 meshes 21. Thereby, the specifying unit 14e can specify that the abrasive on the mesh 21 whose wiring density is lower than a predetermined value out of the 25 meshes 21 flows into the high-density mesh 22q in CMP.

  The determination unit 14f performs the following process for each of the plurality of high-density meshes in the layer selected by the calculation unit 14b. That is, for each high-density mesh, the determination unit 14f determines the area of the mesh whose wiring density is equal to or less than the third predetermined value among the meshes specified by the specifying unit 14e as being closest to the high-density mesh. It is determined whether or not a predetermined value of 4 or more.

  One aspect of the determination unit 14f will be described. The determination unit 14f selects a plurality of high-density meshes of the layer selected by the calculation unit 14b one by one. Here, the determination unit 14f selects one high-density mesh one by one after eliminating a plurality of high-density meshes regarded as one high-density mesh in the specifying unit 14e as one high-density mesh. To do. Moreover, the determination part 14f performs the following processes, whenever a high density mesh is selected one by one. In other words, the determination unit 14f uses the selected high-density mesh as a center, and the radius is N (N is a positive number) times the length of one side of the mesh. When the distance is closest to the selected high-density mesh, the mesh specified by the specifying unit 14e is specified. Here, for example, “3” can be cited as N, but the value of N can be set and changed by the user of the prediction device 10, and an arbitrary value can be used.

  FIG. 9 is a diagram for explaining an example of processing executed by the determination unit. The example of FIG. 9 is an enlarged view near the high density mesh 22j when the determination unit 14f selects the high density mesh 22j in the previous example of FIG. In this case, when the value of N is “3”, as illustrated in the example of FIG. 9, the determination unit 14f has a radius that is centered on the high-density mesh 22j and the length of one side of the mesh. A circle 50 that is three times larger is generated. Then, the determination unit 14f specifies the 26 meshes 51 specified by the specifying unit 14e that are closest to the high-density mesh 22j among the meshes 21 included in the circle 50. Here, the determination unit 14f specifies a mesh including a part of the circle as well as a mesh including all of the mesh as a mesh included in the circle.

  Then, the determination unit 14f specifies a mesh whose copper wiring density is equal to or lower than a third predetermined value among the specified meshes as a low-density mesh. Here, as the third predetermined value, for example, “20%” can be mentioned, but the value of the third predetermined value can be set and changed by the user of the prediction device 10, and an arbitrary value can be set. Can be used. FIG. 10 is a diagram for explaining an example of processing executed by the determination unit. For example, when 26 meshes 51 are specified as shown in the example of FIG. 9, the determination unit 14f has a copper wiring density of 20 in the mesh 51 as shown in the example of FIG. 10 meshes 51 of% or less are specified as low density meshes.

Then, the determination unit 14f calculates the area of the identified low density mesh. For example, as shown in the example of FIG. 10, when ten low density meshes 51 are specified, the determination unit 14f performs the following process. That is, the determination unit 14 f uses the area (20 (μm) × 20 (μm)) × 10 value (4000 μm ² ) of one low density mesh 51 as the area of the ten specified low density meshes 51. calculate.

Then, the determination unit 14f determines whether or not the calculated area is equal to or greater than a fourth predetermined value. Here, as the fourth predetermined value, for example, “3600 μm ² ” can be mentioned, but the value of the fourth predetermined value can be set and changed by the user of the prediction device 10, and an arbitrary value can be set. Can be used. If the calculated area is equal to or greater than the fourth predetermined value, it is predicted that EOE will occur in the selected high-density mesh, and therefore the determination unit 14f selects the record corresponding to the selected high-density mesh as the high-density mesh list. It is identified from the records of 13c. Then, the determination unit 14f registers “1” indicating that EOE is generated in the item “existence of EOE” of the specified record. On the other hand, if the calculated area is less than the fourth predetermined value, it is predicted that EOE will not occur in the selected high-density mesh, and therefore the determination unit 14f increases the record corresponding to the selected high-density mesh. It is specified from the records of the density mesh list 13c. Then, the determination unit 14f registers “0” indicating that EOE does not occur in the item “existence of occurrence of EOE” of the specified record.

  Here, each process after the process which calculates the density of the copper wiring performed by the calculation unit 14b described above, and each of the processes performed by the selection unit 14c, the grouping unit 14d, the specifying unit 14e, and the determination unit 14f described above. The process is executed in the EOE prediction process. Then, the determination unit 14f determines whether or not the end condition is satisfied. For example, the determination unit 14f determines whether or not the end condition is satisfied by determining whether or not the EOE prediction process has been performed a predetermined number of times or more in one layer selected by the calculation unit 14b. Here, the determination unit 14f determines that the end condition is satisfied when it is determined that the EOE prediction process has been performed a predetermined number of times or more in one layer selected by the calculation unit 14b. On the other hand, if the determination unit 14f determines that the EOE prediction process has not been performed a predetermined number of times or more, the determination unit 14f determines that the end condition is not satisfied.

  In addition, the determination unit 14f refers to the high-density mesh list 13c, and determines whether the number of generated EOEs in the one layer selected by the calculation unit 14b is equal to or less than a predetermined value. It can also be determined whether or not the above is satisfied. Here, the determination unit 14f can determine that the number of “1” registered in the “presence / absence of occurrence of EOE” item in the high-density mesh list is the number of generated EOEs. The determination unit 14f determines that the end condition is satisfied when it is determined that the number of generated EOEs is less than or equal to a predetermined value in one layer selected by the calculation unit 14b. On the other hand, if the determination unit 14f determines that the number of generated EOEs is greater than a predetermined value, the determination unit 14f determines that the termination condition is not satisfied.

  If it is determined that the end condition is satisfied, the determination unit 14f determines whether it is determined that the end condition is satisfied in all layers. If the determination unit 14f determines that any of the layers does not satisfy the termination condition, the prediction device 10 according to the present embodiment performs the above-described EOE prediction process again, Each process described above after the EOE prediction process is executed again.

  The correction unit 14g performs the following process when the determination unit 14f determines that the termination condition is not satisfied in one layer selected by the calculation unit 14b. That is, the correction unit 14g refers to the mesh data 13b, obtains the density of the copper wiring of the low-density mesh of the layer selected by the calculation unit 14b, and arranges the low-density meshes in descending order of the copper wiring density. Thus, the records of the mesh data 13b are rearranged.

  Then, the correction unit 14g specifies the top N (N is an integer) records among all the records of the mesh data 13b in which the records are rearranged. Then, the correction unit 14g corrects the dummy wiring for each of the N low-density meshes indicated by the specified N records. For example, the correction unit 14g deletes the dummy wiring already provided for each of the N low-density meshes, and deletes the dummy wiring deleted from a predetermined dummy wiring list (not shown). A dummy wiring having a larger area is selected. Then, the correction unit 14g registers “1” indicating that the dummy wiring has been changed, together with the dummy wiring ID of the selected dummy wiring, in the “Dummy change information” item of the specified record. In this way, the correcting unit 14g corrects the dummy wiring for each of the N low-density meshes indicated by the specified N records. The correction unit 14g selects a dummy wiring to be provided in the gap between the dummy wirings already provided for each of the N low-density meshes from the predetermined dummy wiring list. You can also. Also in this case, the correction unit 14g registers “1” indicating that the dummy wiring has been changed, together with the dummy wiring ID of the selected dummy wiring, in the “Dummy change information” item of the specified record. .

  The display control unit 14h performs the following process when the determination unit 14f determines that the area of the mesh whose wiring density is equal to or smaller than the third predetermined value is equal to or larger than the fourth predetermined value. That is, the display control unit 14h controls the display unit 12 to display information indicating that EOE (Edge Over Erosion) occurs in the selected high-density mesh. The display control unit 14h is an example of an output unit.

  One aspect of the display control unit 14h will be described. The display control unit 14h specifies a record in which “1” indicating that EOE has occurred is registered in the item “whether or not EOE has occurred” from the records of the high-density mesh list 13c. Then, the display control unit 14h uses the registered contents of the specified record and the semiconductor integrated circuit model data 13a to display the model of the semiconductor integrated circuit in which the mesh portion where EOE is generated is emphasized. The unit 12 is controlled. Furthermore, the display control unit 14h specifies the record in which “1” and the dummy wiring ID are registered in the item “Dummy change information” from the records of the mesh data 13b, and displays various contents of the specified record. The display unit 12 can also be controlled to display.

  The control unit 14 is a circuit such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a central processing unit (CPU), or a micro processing unit (MPU).

[Process flow]
Next, the flow of processing executed by the prediction device 10 according to the present embodiment will be described. FIG. 11 is a flowchart illustrating the procedure of the prediction process according to the embodiment. The prediction process according to the embodiment is executed by the control unit 14 when, for example, an instruction for executing the prediction process is input from the input unit 11 to the control unit 14.

  As shown in FIG. 11, the dividing unit 14a acquires the semiconductor integrated circuit model data 13a from the storage unit 13 (S101). Then, the dividing unit 14a determines whether or not there is an unselected layer among all the layers of the model of the semiconductor integrated circuit indicated by the semiconductor integrated circuit model data 13a (S102).

  If it is determined that there is an unselected layer (S102; Yes), the dividing unit 14a selects one unselected layer (S103). Then, the dividing unit 14a divides the surface of the selected layer (substrate on which the copper wiring is provided) provided with the copper wiring into a plurality of meshes (S104).

  Then, the dividing unit 14a adds a record to the mesh data 13b for each mesh (S105). And the division part 14a registers the various data regarding a mesh into the added record for every mesh. For example, the dividing unit 14a registers a numerical value indicating the number of the layer where the mesh is located in the item “layer” of the added record. Further, for each mesh, the dividing unit 14a sets the value of the X coordinate of a predetermined point on the mesh (for example, the point on the mesh closest to the origin O) in the “X coordinate” item of the added record. sign up. For each mesh, the dividing unit 14a sets the value of the Y coordinate of a predetermined point on the mesh (for example, the point on the mesh closest to the origin O) in the item “Y coordinate” of the added record. Registration is performed (S106). Then, the dividing unit 14a returns to S102.

  On the other hand, when it determines with there being no unselected layer (S102; No), the division part 14a makes unselected all the selected layers (S107).

  Then, the calculation unit 14b determines whether or not there is an unselected layer among all the layers of the model of the semiconductor integrated circuit (S108). When it is determined that there is an unselected layer (S108; Yes), the calculation unit 14b selects one unselected layer (S109). And the calculation part 14b etc. perform an EOE prediction process (S110).

  FIG. 12 is a flowchart illustrating a procedure of EOE prediction processing according to the embodiment. As shown in FIG. 12, the calculation unit 14b calculates the density of copper wiring in each mesh of the selected layer (S201).

  Then, the calculation unit 14b calculates the density of dummy wirings in each mesh of the selected layer (S202). Then, the calculation unit 14b specifies coordinates for specifying a region where dummy wirings can be arranged in each mesh of the selected layer (S203). Then, the calculation unit 14b calculates the area of a region where dummy wirings can be placed in each mesh of the selected layer (S204).

  And the calculation part 14b specifies the record corresponding to a mesh from the record of the mesh data 13b for every mesh (S205). And the calculation part 14b registers the various data regarding a mesh into the specified record for every mesh. For example, the calculation unit 14b registers the density of the copper wiring in the item “Dens” of the specified record for each mesh. Further, the calculation unit 14b registers the density of the dummy wiring in the item “dummyDens” of the specified record for each mesh. Further, the calculation unit 14b sets, for each mesh, the coordinates for specifying the area where the dummy wiring can be placed and the area of the area where the dummy wiring can be placed in the item “dummyArea” of the specified record. Register (S206).

  Then, the selection unit 14c acquires the density of copper wiring of each mesh of the layer selected by the calculation unit 14b from the mesh data 13b (S207). And the selection part 14c selects the high density mesh demonstrated below from the mesh of the layer selected by the calculation part 14b using the acquired density of the copper wiring of each mesh. That is, the selection unit 14c is a mesh in which the wiring density is higher than the density of the copper wiring in the adjacent mesh by the first predetermined value or more, and the density of the copper wiring is second. Is selected as a high density mesh (S208).

  Then, the selection unit 14c adds a record to the high density mesh list 13c for each high density mesh (S209). And the selection part 14c registers the various data regarding a high density mesh into the added record for every high density mesh. For example, for each high density mesh, the selection unit 14c registers a numerical value indicating the number of the layer where the high density mesh is located in the item “layer” of the added record. For each high density mesh, the selection unit 14c sets the X of a predetermined point on the high density mesh (for example, the point on the mesh closest to the origin O) in the “X coordinate” item of the added record. Register the coordinate value. For each high-density mesh, the selection unit 14c adds Y of a predetermined point on the high-density mesh (for example, a point on the mesh closest to the origin O) to the item “Y coordinate” of the added record. Coordinate values are registered (S210).

  Then, the grouping unit 14d draws a line 23a parallel to the Y axis for each predetermined mesh from the origin O in the X axis direction, and a line 23b parallel to the X axis for each predetermined mesh from the origin O to the Y axis direction. To form a plurality of blocks by the lines 23a and 23b (S211). Then, the grouping unit 14d performs the following process so that the plurality of high-density meshes 22 existing in the same block formed by the lines 23a and 23b belong to the same group. That is, the grouping unit 14d assigns the same group ID to a plurality of high-density meshes 22 existing in the same block (S212).

  Then, the identification unit 14e regards a plurality of high-density meshes belonging to the same group as the same high-density mesh, and is a diagram in which meshes other than the high-density mesh indicate to which high-density mesh the distance is close A discrete Voronoi diagram is created (S213). And the specific | specification part 14e performs the following process using a discrete Voronoi diagram. In other words, the specifying unit 14e sets a plurality of high-density meshes belonging to the same group as the same high-density mesh, and for each of the plurality of meshes other than the high-density mesh, the closest distance from the plurality of high-density meshes A density mesh is specified (S214).

  Then, the determination unit 14f determines whether or not there is an unselected high-density mesh among the plurality of high-density meshes of the layer selected by the calculation unit 14b (S215). Here, the determination unit 14f resolves that a plurality of high-density meshes regarded as one high-density mesh in the specifying unit 14e are regarded as one high-density mesh, and then includes the plurality of high-density meshes. It is determined whether there is an unselected high-density mesh.

  If it is determined that there is an unselected high density mesh (S215; Yes), the determination unit 14f selects one unselected high density mesh (S216). Then, the determination unit 14f generates a circle centered on the selected high-density mesh and whose radius is N (N is a positive number) times the length of one side of the mesh. Process. That is, the determination unit 14f specifies the mesh specified by the specifying unit 14e as having the closest distance to the selected high-density mesh among the meshes included in the generated circle (S217).

  Then, the determination unit 14f specifies a mesh whose copper wiring density is equal to or lower than a third predetermined value among the specified meshes as a low density mesh (S218). Then, the determination unit 14f calculates the area of the identified low density mesh (S219).

  Then, the determination unit 14f determines whether or not the calculated area is equal to or greater than a fourth predetermined value (S220). If it is determined that the calculated area is equal to or greater than the fourth predetermined value (S220; Yes), the determination unit 14f specifies a record corresponding to the selected high-density mesh from the records in the high-density mesh list 13c. Then, the following processing is performed. In other words, the determination unit 14f registers “1” indicating that EOE occurs in the item “existence / non-occurrence of EOE” of the specified record (S221), and returns to S215. On the other hand, when it is determined that the calculated area is less than the fourth predetermined value (S220; No), the determination unit 14f selects a record corresponding to the selected high-density mesh in the records of the high-density mesh list 13c. The following processing is performed. That is, the determination unit 14f registers “0” indicating that EOE does not occur in the item “existence of occurrence of EOE” of the specified record (S222), and returns to S215.

  On the other hand, if it is determined that there is no unselected high-density mesh (S215; No), the determination unit 14f stores the processing result in the internal memory of the control unit 14 and returns.

  Returning to the description of FIG. 11, the determination unit 14f determines whether or not the end condition is satisfied (S111).

  If it is determined that the termination condition is not satisfied (S111; No), the correction unit 14g refers to the mesh data 13b and acquires the density of the copper wiring of the low-density mesh of the layer selected by the calculation unit 14b. The following processing is performed. That is, the correction unit 14g rearranges the records of the mesh data 13b so that the low-density meshes are arranged in the order of decreasing copper wiring density (S113).

  Then, the correction unit 14g identifies the top N (N is an integer) records among all the records of the mesh data 13b in which the records are rearranged, and the N low density indicated by the identified N records The dummy wiring is corrected for each mesh (S114). Then, the correcting unit 14g returns to S110.

  On the other hand, when it is determined that the end condition is satisfied (S111; Yes), the determination unit 14f determines whether it is determined that the end condition is satisfied in all layers (S112). If it is determined that the termination condition is not satisfied in any one of the layers (S112; No), the determination unit 14f returns to S108.

  When it is determined that the termination condition is satisfied in all layers (S112; Yes), the display control unit 14h performs the following process. That is, the display control unit 14h specifies a record in which “1” indicating that an EOE has occurred is registered in the item “whether or not EOE has occurred” from the records of the high-density mesh list 13c (S115). ). Then, the display control unit 14h uses the registered contents of the specified record and the semiconductor integrated circuit model data 13a to display the model of the semiconductor integrated circuit in which the mesh portion where EOE is generated is emphasized. The unit 12 is controlled. Furthermore, the display control unit 14h specifies the record in which “1” and the dummy wiring ID are registered in the item “Dummy change information” from the records of the mesh data 13b, and displays various contents of the specified record. The display unit 12 is controlled to display (S116). Then, the display control unit 14h ends the prediction process.

  When it is determined that there is no unselected layer (S108; No), the display control unit 14h controls the display unit 12 to display a predetermined error message (S117), and ends the prediction process. .

  As described above, the prediction device 10 according to the embodiment divides the predetermined plane described above into a plurality of meshes for each layer with respect to the model of the semiconductor integrated circuit. And the prediction apparatus 10 calculates the density of the copper wiring in each mesh. Then, the prediction device 10 selects a plurality of high-density meshes, which are meshes having a wiring density higher than a predetermined density by a first predetermined value from a plurality of meshes. Then, the prediction device 10 groups each of the plurality of high-density meshes so as to belong to any one of the plurality of groups. And the prediction apparatus 10 specifies the high density mesh with the shortest distance among several meshes other than a high density mesh among several meshes. Then, the prediction device 10 has, for each of the plurality of high-density meshes, among the meshes identified as having the closest distance to the high-density mesh for each high-density mesh, the wiring density is a low value of the third predetermined value or less. Specify the density mesh. And the prediction apparatus 10 performs the next process, when the area of the specified low density mesh is more than a 4th predetermined value. That is, the prediction device 10 outputs information indicating that EOE has occurred in the high-density mesh. Therefore, according to the prediction apparatus 10, the low density mesh relevant to generation | occurrence | production of EOE in a high density mesh is specified for every high density mesh. And the prediction apparatus 10 outputs the information which shows that EOE generate | occur | produced in the high-density mesh, when the area of the specified low-density mesh is 4th predetermined value or more. In other words, the prediction device 10 predicts the occurrence of EOE using information on meshes (low density meshes) related to the occurrence of EOE, without using information on meshes not related to the occurrence of EOE. Therefore, according to the prediction device 10, it is possible to suppress a decrease in prediction accuracy regarding the occurrence of EOE. Furthermore, according to the prediction device 10, it is possible to improve the yield of the semiconductor integrated circuit as a result of suppressing the decrease in the prediction accuracy regarding the occurrence of EOE.

  The prediction device 10 groups each of the plurality of high-density meshes so as to belong to any one of the plurality of groups. Then, the prediction device 10 identifies a plurality of high-density meshes belonging to the same group as the same high-density mesh, and for each of the plurality of meshes, the closest high-density mesh from among the plurality of high-density meshes. . As described above, according to the prediction device 10, after the high-density meshes are grouped, for each of the plurality of meshes, the closest high-density mesh is identified from among the plurality of high-density meshes. Processing when specifying a mesh is simplified.

  Moreover, the prediction apparatus 10 corrects the dummy wiring in the low density mesh so that the density of the wiring in the low density mesh becomes high when the area of the identified low density mesh is equal to or larger than the fourth predetermined value. And the prediction apparatus 10 outputs the information which concerns on the low density mesh by which the dummy wiring was corrected. For example, the prediction device 10 identifies the record in which “1” and the dummy wiring ID are registered in the item “Dummy change information” from the records of the mesh data 13b, and displays various contents of the identified record. The display unit 12 is controlled to do so. As described above, the prediction device 10 does not correct the dummy wirings in all the meshes around the high-density mesh, but corrects the dummy wirings in the low-density mesh specified by the pinpoint. Therefore, according to the prediction apparatus 10, it can suppress that the data size of the information by which the dummy wiring was corrected increases.

  Further, the prediction device 10 predicts the occurrence of EOE for each layer of the model of the semiconductor integrated circuit. Therefore, according to the prediction device 10, it is possible to suppress a decrease in the accuracy of prediction regarding the occurrence of EOE in each layer of the model of the semiconductor integrated circuit.

  Although the embodiments related to the disclosed apparatus have been described above, the present invention may be implemented in various different forms other than the above-described embodiments.

  For example, in the above-described embodiment, a case has been described in which the grouping unit 14d groups each of the plurality of high-density meshes so as to belong to any one of the plurality of groups. However, the disclosed apparatus can omit the grouping process. In this case, the specific unit of the disclosed device selects a high-density mesh having the shortest distance from a plurality of non-grouped high-density meshes for each of the meshes other than the high-density meshes. Identify.

  Further, the first predetermined value, the second predetermined value, the third predetermined value, the fourth predetermined value, and each value of “N” described above are stored in a file (not shown) stored in the storage unit 13. ) Can also be registered. In this case, when each unit of the control unit 14 is used in each process, each unit reads from the file the first predetermined value, the second predetermined value, the third predetermined value, the fourth predetermined value, and “N”. One of these values is acquired, and each process is performed using the acquired value. In addition, the first predetermined value, the second predetermined value, the third predetermined value, the fourth predetermined value, and each value of “N” registered in the file are arbitrary values by the user of the prediction device 10. Can be changed.

  In addition, among the processes described in the embodiments, all or a part of the processes described as being automatically performed can be manually performed. In addition, among the processes described in the embodiments, all or a part of the processes described as being performed manually can be automatically performed by a known method.

  In addition, the processing at each step of each processing described in each embodiment can be arbitrarily finely divided or combined according to various loads and usage conditions. Also, the steps can be omitted.

  Further, the order of processing at each step of each processing described in each embodiment can be changed according to various loads and usage conditions.

  Further, each component of each illustrated apparatus is functionally conceptual, and does not necessarily need to be physically configured as illustrated. In other words, the specific state of distribution / integration of each device is not limited to the one shown in the figure, and all or a part thereof may be functionally or physically distributed or arbitrarily distributed in arbitrary units according to various loads or usage conditions. Can be integrated and configured.

[Prediction program]
Various processes of the prediction apparatus 10 described in the above embodiment can also be realized by executing a prepared program on a computer system such as a personal computer or a workstation. Therefore, in the following, an example of a computer that executes a prediction program having the same function as the prediction device 10 described in the above embodiment will be described with reference to FIG. FIG. 13 is a diagram illustrating a computer that executes a prediction program.

  As illustrated in FIG. 13, the computer 300 includes a CPU 310, a ROM 320, an HDD (Hard Disk Drive) 330, and a RAM 340. These devices 310 to 340 are connected via a bus 350.

  The ROM 320 stores a basic program such as an OS (Operating System). In addition, the HDD 330 stores in advance a prediction program 330a that exhibits the same function as each of the units 14a to 14h shown in the above embodiment. The HDD 330 is provided with various data and lists stored in the storage unit 13.

  Then, the CPU 310 reads the prediction program 330a from the HDD 330 and executes it.

  Then, the CPU 310 reads out various data and lists and stores them in the RAM 340. Further, the CPU 310 executes the prediction program 330 a using various data and lists stored in the RAM 340. Note that the data stored in the RAM 340 may not always be stored in the RAM 340. Data used for processing may be stored in the RAM 340.

  Note that the above-described prediction program 330a is not necessarily stored in the HDD 330 from the beginning.

  For example, the program is stored in a “portable physical medium” such as a flexible disk (FD), a CD-ROM, a DVD disk, a magneto-optical disk, or an IC card inserted into the computer 300. Then, the computer 300 may read and execute the program from these.

  Furthermore, the program is stored in “another computer (or server)” connected to the computer 300 via a public line, the Internet, a LAN, a WAN, or the like. Then, the computer 300 may read and execute the program from these.

DESCRIPTION OF SYMBOLS 10 Prediction apparatus 13 Memory | storage part 13a Semiconductor integrated circuit model data 13b Mesh data 13c High-density mesh list 14 Control part 14a Division | segmentation part 14b Calculation part 14c Selection part 14d Grouping part 14e Identification part 14f Judgment part 14g Correction part 14h Display control part

Claims (6)

Dividing the predetermined surface of a circuit model having a plurality of surfaces and having a substrate having a groove formed in a predetermined surface of the plurality of surfaces and a wiring provided in the groove into a plurality of meshes And
A calculation unit for calculating the density of the wiring in each of the plurality of meshes;
A selection unit that selects a plurality of first meshes that are higher than the density of the wiring in the adjacent mesh from the plurality of meshes by a first predetermined value or more and the density of the wiring is higher;
A specifying unit that specifies a first mesh having a closest distance from the plurality of first meshes for each of a plurality of second meshes that are meshes other than the first mesh among the plurality of meshes; ,
For each of the plurality of first meshes, a second mesh whose wiring density is less than or equal to a second predetermined value among the second meshes specified by the specifying unit when the distance is closest to the first mesh. An output unit that outputs information indicating that EOE (Edge Over Erosion) occurs in the first mesh when the area of the mesh is equal to or greater than a third predetermined value;
The prediction apparatus characterized by having. A grouping unit that groups each of the plurality of first meshes so as to belong to any one of a plurality of groups;
The specifying unit sets a plurality of first meshes belonging to the same group as the same first mesh, and a first distance closest to the first mesh among the plurality of second meshes. The prediction apparatus according to claim 1, wherein the mesh is specified. For each of the plurality of first meshes, a second mesh whose wiring density is less than or equal to a second predetermined value among the second meshes specified by the specifying unit when the distance is closest to the first mesh. When the area of the mesh is equal to or greater than the third predetermined value, a correction unit that corrects the wiring of the second mesh whose density is less than or equal to the second predetermined value;
The said output part outputs the information which concerns on the said 2nd mesh by which the wiring was corrected by the said correction part with the said information. The prediction apparatus of Claim 1 or Claim 2 characterized by the above-mentioned. The circuit model is a circuit model in which a plurality of layers including a substrate having a groove formed on the predetermined surface and a wiring provided in the groove are stacked.
The dividing unit divides the predetermined surface into a plurality of meshes for each layer,
The calculation unit calculates the density of the wiring for each layer,
The selection unit selects a plurality of the first meshes for each layer,
For each of the plurality of second meshes, the specifying unit specifies the first mesh having the shortest distance from the plurality of first meshes for each of the plurality of second meshes,
For each of the plurality of first meshes, for each of the plurality of first meshes, the output unit includes the wiring density among the second meshes identified by the identifying unit as having the closest distance to the first mesh. When the area of the second mesh that is less than or equal to the second predetermined value is greater than or equal to the third predetermined value, information indicating that EOE occurs in the first mesh is output. The prediction apparatus as described in any one of Claims 1-3. On the computer,
Dividing the predetermined surface of a circuit model having a plurality of surfaces and a circuit board having a groove formed in a predetermined surface of the plurality of surfaces and a wiring provided in the groove into a plurality of meshes;
Calculating the density of the wiring in each of the plurality of meshes;
From the plurality of meshes, select a plurality of first meshes that are meshes having a density higher than the first predetermined value and higher than the density of the wirings in the adjacent mesh,
For each of a plurality of second meshes that are meshes other than the first mesh among the plurality of meshes, the first mesh having the closest distance is identified from among the plurality of first meshes,
For each of the plurality of first meshes, among the second meshes identified as being closest to the first mesh, the area of the second mesh whose wiring density is equal to or less than a second predetermined value is If it is greater than or equal to the third predetermined value, control is performed to output information indicating that EOE occurs in the first mesh.
A prediction program characterized by causing a process to be executed. Computer
Dividing the predetermined surface of a circuit model having a plurality of surfaces and a circuit board having a groove formed in a predetermined surface of the plurality of surfaces and a wiring provided in the groove into a plurality of meshes;
Calculating the density of the wiring in each of the plurality of meshes;
From the plurality of meshes, select a plurality of first meshes that are meshes having a density higher than the first predetermined value and higher than the density of the wirings in the adjacent mesh,
For each of a plurality of second meshes that are meshes other than the first mesh among the plurality of meshes, the first mesh having the closest distance is identified from among the plurality of first meshes,
For each of the plurality of first meshes, among the second meshes identified as being closest to the first mesh, the area of the second mesh whose wiring density is equal to or less than a second predetermined value is If it is greater than or equal to the third predetermined value, control is performed to output information indicating that EOE occurs in the first mesh.
A prediction method characterized by executing processing.

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