JP6095350B2 - Imaging apparatus and defective pixel detection method - Google Patents

Description

  The present invention relates to an imaging apparatus, and more particularly to a technique for detecting defective pixels of a solid-state imaging element used in the imaging apparatus.

  As solid-state imaging devices such as CMOS sensors are miniaturized, the frequency of defective pixels increases, and defective pixels having various different characteristics have been confirmed. Typical defective pixels include white point defective pixels that become white points in dark images when light is blocked, and black point defective pixels that become black points when shooting high-luminance subjects such as light boxes. There are also known defective pixels whose output level changes with temperature.

  In order to deal with such defective pixels, the imaging device, for example, detects a defective pixel of a solid-state imaging device on a production line, stores the detected address in a nonvolatile memory, and around the defective pixel based on the address An interpolation pixel for correcting a defective pixel from the pixel is created. In addition, as a defective pixel detection technique, detection of defective pixels or false detections is performed by detecting defective pixels with a low-intensity subject when detecting white-point defective pixels and with a high-luminance subject when detecting black-point defective pixels. A technique for reducing the thickness has been proposed (see Patent Document 1). Furthermore, a technique has been proposed in which false detection is reduced by changing a threshold value for detecting a defective pixel in accordance with temperature to reduce dependency of detection performance on temperature (see Patent Document 2).

JP 2005-142722 A Japanese Patent Laid-Open No. 5-268527

  Here, an example of defective pixels in the CMOS sensor will be described. FIG. 7 is a diagram illustrating an example of a relationship between temperature and output characteristics in a defective pixel of a CMOS sensor. 7A shows the defective pixels α, β, when the charge accumulation time is 1/60 seconds (TV60), and FIG. 7B shows the charge accumulation time when the charge accumulation time is 1/2 seconds (TV2). The relationship between the temperature of γ and the output characteristics is shown.

  As is clear from the comparison between FIGS. 7A and 7B, the defective pixel α is a white point defective pixel having a generally known characteristic, and its output level changes depending on the temperature of the CMOS sensor. At the same time, it is a defective pixel whose output level changes depending on the charge accumulation time. The defective pixel β has an output level that changes with temperature, but has almost no change in output level due to the charge accumulation time. The defective pixel γ is a pixel having a constant output level regardless of the temperature and the charge accumulation time. The defective pixels α and β are characteristics that appear due to defects in the photodiode (PD), and the defective pixel γ is a characteristic that appears as defects in the floating diffusion (FD).

  Assuming that the output level at which defective pixels can be detected is 100 mV, in order to accurately detect all white point defective pixels, from FIG. 7, the TV 60 has a CMOS sensor at 60 ° C. or higher, and the TV 2 has a CMOS sensor at 55 ° C. It turns out that it is necessary to perform detection in the above state.

  However, in order to ensure the productivity of the imaging apparatus, it is not possible to spend more time than necessary to detect defective pixels, and therefore it is necessary to detect defective pixels while the solid-state imaging device is at a low temperature. In order to detect defective pixels whose output characteristics change depending on temperature in a low temperature state, the detection threshold is set low as in Patent Document 2 described above. However, if the detection threshold is too low, defective pixels that are not originally required to be detected are detected. There arises a problem that a large number of defective pixels having the γ characteristic are detected. This also causes a problem that the corrected output image is deteriorated by performing correction for interpolating defective pixels more than necessary.

  On the other hand, by setting the detection threshold high as the state of the TV 2, it is possible to detect only the defective pixel α without detecting a large amount of defective pixels having the characteristic of the defective pixel γ. Further, unlike the defective pixels α and β, the defective pixel γ can be dealt with by detecting it separately using a characteristic that can be detected even when the PD charge transfer is turned off. Is possible. Such a method can prevent occurrence of the above-described problem that the output image after correction is deteriorated by performing correction more than necessary, but the solid-state imaging device may detect the defective pixel β in a low temperature state. The problem of being unable to remain remains.

  An object of the present invention is to provide a technique for improving the detection accuracy of a defective pixel having a characteristic that the output characteristic depends on the temperature but hardly depends on the charge accumulation time even when the solid-state imaging device is in a low temperature state.

The image pickup apparatus according to the present invention includes: a detection unit that detects a defective pixel included in a solid-state image sensor from an image obtained by the solid-state image sensor; and the detection unit that detects a first image obtained by the solid-state image sensor. Removing means for removing the address of the defective pixel detected by the detecting means from the second image obtained by the solid-state imaging device from the detected address of the defective pixel, and obtaining the address of the defective pixel having a predetermined characteristic; The first image is an image obtained by transferring the charge of the photodiode of the solid-state imaging device, and the second image is transferred without transferring the charge of the photodiode of the solid-state imaging device. It is an obtained image .

Another imaging apparatus according to the present invention includes a subtracting unit that subtracts a second image obtained by the solid-state imaging device from a first image obtained by the solid-state imaging device, and obtains a difference image; and the subtracting unit Detecting means for detecting an address of a defective pixel having a predetermined characteristic possessed by the solid-state imaging device from the difference image obtained by the step , and when the solid-state imaging device is higher than a predetermined temperature, the detecting means A defective pixel address is detected from the first image, and the detected defective pixel address is used as the defective pixel address having the predetermined characteristic .

  According to the present invention, even when the image sensor is in a low temperature state, it is possible to accurately detect a defective pixel having a characteristic whose output characteristic depends on temperature but hardly depends on the charge accumulation time. Accordingly, unnecessary defective pixel interpolation is not performed, so that a high-quality output image can be obtained.

It is a perspective view which shows the external appearance structure of the digital video camera which concerns on embodiment of this invention. FIG. 2 is a block diagram illustrating a schematic hardware configuration of the digital video camera of FIG. 1. It is a flowchart which shows the process sequence of the 1st defective pixel detection method performed with respect to the image pick-up element of the digital video camera of FIG. It is a figure which shows typically how a defective pixel detection result changes when the 1st defective pixel detection method of FIG. 3 is performed. It is a flowchart which shows the process sequence of the 2nd defective pixel detection method performed with respect to the image pick-up element of the digital video camera of FIG. It is a figure which shows typically how a defective pixel detection result changes when the 2nd defective pixel detection method of FIG. 5 is performed. It is a figure which shows the example of the relationship between the temperature in a defective pixel of a CMOS sensor, and an output.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Here, the present invention will be described by taking a digital video camera as an example of an imaging apparatus employing the defective pixel detection method according to the present invention.

<Appearance structure of digital video camera>
FIG. 1 is a perspective view showing an external structure of a digital video camera according to an embodiment of the present invention. The digital video camera 100 includes a liquid crystal (LCD) panel 101 and a finder 102 as a display unit that displays various information such as captured images, imaging conditions, function settings and operation settings of the digital video camera 100. The digital video camera 100 also includes a connector 105 for connecting a power cable (not shown). The digital video camera 100 operates by receiving power from an attached battery (not shown), and the battery is housed inside the battery housing unit 106.

  The digital video camera 100 includes an operation unit 107 including operation members such as various switches, buttons, and a touch panel that receive various operations from the user. By selecting a menu button or various function icons displayed on the liquid crystal panel 101 and performing a touch operation, the selected function can be executed. Examples of the function icon include an end button, a return button, an image advance button, a jump button, a narrow button, an attribute change button, and the like. Note that the touch panel is superimposed on the liquid crystal panel 101. There is no restriction | limiting in the touch detection method of a touch panel, For example, a resistive film system, an electrostatic capacitance system, a surface acoustic wave system, an infrared system, an electromagnetic induction system, an image recognition system, an optical sensor system etc. are mentioned.

  The digital video camera 100 also includes a trigger button 103, a mode switch 104, a zoom key 108, and a power switch 109. The trigger button 103 issues a shooting instruction (shooting start / shooting end). The mode switch 104 switches the operation mode (moving image shooting mode / still image shooting mode). The mode changeover switch 104 switches the shooting mode (auto shooting mode, auto scene discrimination mode, manual mode, scene mode for each shooting scene, program AE mode, custom mode, etc.). The zoom key 108 performs zoom operations such as optical zoom and electronic zoom. The power switch 109 switches the power on (ON) / off (OFF).

  The digital video camera 100 includes a recording medium slot 111 for storing a recording medium 220 (see FIG. 2) such as a memory card. The recording medium slot 111 can be opened and closed by a lid 112. The recording medium 220 stored in the recording medium slot 111 can communicate with the main body of the digital video camera 100. The digital video camera 100 includes a grip belt 110 for fixing the digital video camera 100 and a user's hand during shooting.

<Digital video camera hardware configuration>
FIG. 2 is a block diagram showing a schematic hardware configuration of the digital video camera 100. In FIG. 2, the same components as those in FIG. The digital video camera 100 includes a barrier 201, a photographing lens 202, a shutter 203, an image sensor 204, an A / D conversion unit 205, an image processing unit 206, a memory control unit 207, a D / A conversion unit 208, a memory 209, and a system control unit. 210.

  The barrier 201 covers the photographing lens 202 to prevent the imaging optical system including the photographing lens 202, the shutter 203, and the imaging element 204 from being soiled or damaged. The photographing lens 202 is a lens group including a zoom lens and a focus lens. The shutter 203 has a diaphragm function and controls the exposure amount with respect to the image sensor 204. The image sensor 204 is a solid-state image sensor such as a MOS sensor or a CCD sensor that converts an optical image of a subject into an electrical signal (analog signal). The A / D conversion unit 205 converts an analog signal output from the image sensor 204 into a digital signal (image data).

  The image processing unit 206 performs pixel interpolation processing, resizing processing such as reduction, color conversion processing, or the like on the image data output from the A / D conversion unit 205 or the image data received from the memory control unit 207. In addition, the image processing unit 206 obtains data used when the system control unit 210 performs exposure control and distance measurement control by performing predetermined arithmetic processing using photographed image data. The exposure control and distance measurement control executed by the system control unit 210 include TTL (through-the-lens) AF (autofocus) processing, TTL AWB (auto white balance) processing, and AE (automatic exposure). ) Processing, EF (flash pre-emission) processing, and the like.

  A digital signal (image data) output from the A / D conversion unit 205 is written into the memory 209 via the image processing unit 206 and the memory control unit 207 or via the memory control unit 207. The memory 209 also serves as an image display memory (video memory), and stores image display data to be displayed on the liquid crystal panel 101 and the finder 102. The memory 209 has a storage capacity sufficient to store a predetermined number of still images, a moving image for a predetermined time, and audio data. The D / A conversion unit 208 converts the image display data stored in the memory 209 into an analog signal and supplies the analog signal to the liquid crystal panel 101 and the finder 102, whereby an image or the like is displayed on the liquid crystal panel 101 or the finder 102. Is done. The image data A / D converted by the A / D conversion unit 205 and stored in the memory 209 is D / A converted by the D / A conversion unit 208 and sequentially transferred to the liquid crystal panel 101 and the finder 102. Through images can be displayed by the electronic viewfinder function.

  The digital video camera 100 includes a nonvolatile memory 211, a system memory 212, a system timer 213, a power supply control unit 214, a power supply unit 215, and a recording medium I / F 216. The nonvolatile memory 211 is an electrically erasable / recordable memory, such as an EEPROM. The nonvolatile memory 211 stores constants and programs for operation of the system control unit 210 (including programs for executing flowcharts of FIGS. 3 and 5 to be described later).

  The system control unit 210 performs overall control of the digital video camera 100 and starts a series of shooting processing operations from reading a signal from the image sensor 204 by operating the shutter 203 to writing image data to the recording medium 220. To do. Further, the system control unit 210 executes various processes described later by executing a predetermined program stored in the nonvolatile memory 211. Further, the system control unit 210 controls the display of the liquid crystal panel 101 and the finder 102 by controlling the memory 209, the D / A conversion unit 208, the liquid crystal panel 101, the finder 102, and the like.

  The system memory 212 uses a RAM, temporarily stores constants and variables for the operation of the system control unit 210, and develops a program read from the nonvolatile memory 211. The system timer 213 measures the time used for various controls and the time of a built-in clock. The trigger button 103, the mode switch 104, the operation unit 107, and the power switch 109 have already been described with reference to FIG.

  The power supply unit 215 is a primary battery such as an alkaline battery or a lithium battery, a secondary battery such as a NiCd battery, a NiMH battery, or a Li battery, an AC adapter, or the like. The power supply control unit 214 includes a battery detection circuit, a DC-DC converter, a switch circuit that switches a block to be energized, and the like, and detects whether or not the battery is installed in the power supply unit 215, the type of battery, and the remaining battery level. Further, the power control unit 214 controls the DC-DC converter based on the detection result and the instruction from the system control unit 210, and supplies a necessary voltage to each unit including the recording medium 220 for a necessary period. The recording medium I / F 216 is an interface that enables communication between the recording medium 220 and the system control unit 210. The recording medium 220 is, for example, a semiconductor memory such as a memory card, a hard disk, or an optical disk.

<Defective Pixel Detection Processing of Image Sensor 204>
Next, the defective pixel detection process of the image sensor 204 will be described. In the following description, similarly to FIG. 7 described above, the output characteristics (output level) change depending on the temperature of the image sensor 204 and the charge accumulation time (the output level has temperature dependence and charge accumulation time dependence). ) Let white point defective pixels be defective pixels α. Also, the output level changes depending on the temperature of the image sensor 204, but the output level does not substantially change depending on the charge accumulation time (the output level has temperature dependence but little charge accumulation time dependence). Let it be pixel β. Further, a white point defective pixel whose output level is constant regardless of the temperature of the image sensor 204 and the charge accumulation time (without the temperature dependence and charge accumulation time dependence of the output level) is defined as a defective pixel γ. . Therefore, the defective pixels α and β appear as photodiode (PD) defects, and the defective pixel γ appears as a floating diffusion (FD) defect. Note that the threshold used for detecting defective pixels is changed according to the temperature of the image sensor 204 in order to obtain the defective pixels α and β regardless of the temperature of the image sensor 204.

[First defective pixel detection method]
In the first defective pixel detection method, a defective pixel is detected by excluding a defective pixel detected under an arbitrary detection condition from all defective pixels detected under a plurality of detection conditions. FIG. 3 is a flowchart showing a processing procedure of the first defective pixel detection method. The system control unit 210 reads out a predetermined program stored in the nonvolatile memory 211, develops and executes it in the work area of the system memory 212, and controls each unit of the digital video camera 100, whereby the flowchart of FIG. Each process is executed.

  First, in step S301, as a preparation for capturing a dark image, the system control unit 210 performs light shielding using components such as a shutter 203 and a lens cap, and sets the charge accumulation time to short exposure. Charge accumulation control is performed. Here, the charge accumulation time of short second exposure is 1/60 seconds (TV 60). In subsequent step S302, system control unit 210 obtains captured image A_in (first captured image), which is a dark image accumulated in short seconds, which is shielded from light in step S301. Subsequently, in step S303, the system control unit 210 performs defective pixel detection (first detection step) using the captured image A_in acquired in step S302.

  Next, in step S304, the system control unit 210 acquires a defective pixel detection result A_out obtained as a result of performing defective pixel detection in step S303. The defective pixels obtained here are all defective pixels α, β, γ. In step S305, the system control unit 210 sets PD charge transfer to OFF. As a result, defective pixels α and β which are PD defects are not generated, and only defective pixels γ which are FD defects are generated. Instead of turning off the PD charge transfer, a charge accumulation state may be set.

  In the next step S306, the system control unit 210 acquires a captured image B_in (second captured image) that is a dark image accumulated in a short second with the PD charge transfer set to OFF in step S305. In subsequent step S307, the system control unit 210 performs defective pixel detection (second detection step) using the captured image B_in acquired in step S306. Subsequently, in step S308, the system control unit 210 acquires a defective pixel detection result B_out obtained as a result of performing defective pixel detection in step S307. The defective pixel obtained here is equivalent to the defective pixel γ existing in the defective pixel detection result A_out obtained in step S304.

  Therefore, in the next step S309, the system control unit 210 acquires the defective pixel detection result C_out by removing the defective pixel detection result B_out obtained in step S308 from the defective pixel detection result A_out obtained in step S304. To do. This defective pixel detection result C_out detects only defective pixels α and β. That is, the defective pixels α and β are determined from the defective pixel detection result C_out. Thereby, this process is complete | finished.

  As described above, in the first defective pixel detection method, defective pixels detected under an arbitrary detection condition are excluded from all defective pixels detected under a plurality of detection conditions. As a result, with respect to the defective pixel β having the characteristic that the output level is temperature-dependent but has almost no charge accumulation time dependency, the occurrence of false detection is reduced even when the image sensor 204 is at a low temperature. Detection can be performed.

  Further, in the first defective pixel detection method, the threshold used for detecting defective pixels is changed according to the temperature of the image sensor 204, so that defective pixels can be detected even when the temperature of the image sensor 204 becomes high. It is. That is, the defective pixel γ can be detected with the PD charge transfer turned off as in the conventional case. Therefore, by using this characteristic, only the defective pixel γ is detected, and the detection result of step S309 and the detection result of only the defective pixel γ are ORed, so that the defective pixels α, β, γ can be detected with higher accuracy. All can be detected.

  When the image sensor 204 is in a high temperature state, the threshold used for detecting defective pixels is sufficiently high, so that erroneous detection of defective pixels γ is prevented. Therefore, when the temperature of the image sensor 204 exceeds a predetermined temperature, the defective pixel detection processing time may be shortened by omitting the processing after step S305. It goes without saying that the defective pixel can be corrected by interpolating the pixel value of the defective pixel obtained by the first defective pixel detection method using surrounding pixels.

  FIG. 4 is a diagram schematically showing how the defective pixel detection result transitions when the first defective pixel detection method is executed. FIG. 4A is an image diagram of the defective pixel detection result A_out obtained in step S304. Black squares (■) indicate detected defective pixels, and the defective pixels shown here are all defective pixels α, β, and γ. FIG. 4B is an image diagram of the defective pixel detection result B_out obtained in step S308, and the defective pixels shown here are only defective pixels γ.

  FIG. 4C is an image diagram of the processing performed in step S309. Here, the defective pixel detection result B_out obtained in step S308 is removed from the defective pixel detection result A_out obtained in step S304, and a defective pixel from which the cross (x) is removed is shown. FIG. 4D is an image diagram of the defective pixel detection result C_out obtained in step S309, and the defective pixels shown here are only defective pixels α and β.

[Second defective pixel detection method]
In the second defective pixel detection method, it is obtained by subtracting a second captured image (another arbitrary captured image) different from the first captured image from the first captured image (arbitrary captured image). The defective pixel is detected using the obtained image data. FIG. 5 is a flowchart showing a processing procedure of the second defective pixel detection method. The system control unit 210 reads out a predetermined program stored in the nonvolatile memory 211, develops and executes it in the work area of the system memory 212, and controls each unit of the digital video camera 100, whereby the flowchart of FIG. Each process is executed.

  First, in step S501, as a preparation for capturing a dark image, the system control unit 210 performs light shielding using components such as a shutter 203 and a lens cap, and sets the charge accumulation time to short exposure. . Also here, the charge accumulation time of short second exposure is 1/60 seconds (TV 60). In the subsequent step S502, the system control unit 210 acquires a captured image A_in that is a dark image accumulated in the short seconds that has been shielded from light in step S501. In subsequent step S503, system control unit 210 sets PD charge transfer to OFF. As a result, defective pixels α and β which are PD defects are not generated, and only defective pixels γ which are FD defects are generated. Instead of turning off the PD charge transfer, a charge accumulation state may be set.

  Next, in step S504, the system control unit 210 acquires the captured image B_in that is a dark image accumulated in a short second with the PD charge transfer set to OFF in step S503. In subsequent step S505, the system control unit 210 subtracts the captured image B_in obtained in step S504 from the captured image A_in obtained in step S502, thereby obtaining a difference image C_in. Subsequently, in step S506, the system control unit 210 performs defective pixel detection on the difference image C_in acquired in step S505. In step S507, the system control unit 210 acquires a defective pixel detection result C_out obtained as a result of the defective pixel detection performed in step S506. This defective pixel detection result C_out detects only the defective pixels α and β, and this processing is completed.

  As described above, in the second defective pixel detection method, defective pixel detection is performed on the difference image C_in obtained by subtracting an arbitrary captured image B_in different from the captured image A_in from an arbitrary captured image A_in. Do. As a result, with respect to the defective pixel β having the characteristic that the output level is temperature-dependent but has almost no charge accumulation time dependency, the occurrence of false detection is reduced even when the image sensor 204 is at a low temperature. Detection can be performed.

  In the second defective pixel detection method, the threshold used for detecting defective pixels is changed in accordance with the temperature of the image sensor 204, so that defective pixels can be detected even when the temperature of the image sensor 204 becomes high. It is. That is, the defective pixel γ can be detected with the PD charge transfer turned off as in the conventional case. Therefore, by using this characteristic, only the defective pixel γ is detected, and the detection result of step S309 and the detection result of only the defective pixel γ are ORed, so that the defective pixels α, β, γ can be detected with higher accuracy. All can be detected.

  When the image sensor 204 is in a high temperature state, the threshold used for detecting defective pixels is sufficiently high, so that erroneous detection of defective pixels γ is prevented. Therefore, when the temperature of the image sensor 204 exceeds a predetermined temperature, the defective pixel detection processing time may be shortened by omitting the processing from step S503 to step S505. It goes without saying that the defective pixels can be corrected by interpolating the defective pixels obtained by the second defective pixel detection method using surrounding pixels.

  FIG. 6 is a diagram schematically showing how the defective pixel detection result transitions when the second defective pixel detection method is executed. As shown in FIG. 6A, FIG. (E) to (e) show the relationship between pixels and output levels when an arbitrary horizontal line in the imaging region of the image sensor 204 is extracted.

  FIG. 6B is an image diagram of the captured image A_in obtained in step S502, and the defective pixels obtained here are all defective pixels α, β, and γ. FIG. 6C is an image diagram of the captured image B_in obtained in step S504, and the defective pixel obtained here is only the defective pixel γ. FIG. 6D is an image diagram of the process performed in step S505. Here, the picked-up image B_in obtained in step S504 is subtracted from the picked-up image A_in obtained in step S502, and the cross mark (×) indicates the output level to be subtracted. FIG. 6E is an image diagram of the difference image C_in obtained in step S505, and the defective pixels (pixels having a high output level indicated by broken line arrows) obtained here are only defective pixels α and β.

<Other embodiments>
Although the present invention has been described in detail based on preferred embodiments thereof, the present invention is not limited to these specific embodiments, and various forms within the scope of the present invention are also included in the present invention. included. Furthermore, each embodiment mentioned above shows only one embodiment of this invention, and it is also possible to combine each embodiment suitably.

  The present invention can also be realized by executing the following processing. That is, software (program) that realizes the functions of the above-described embodiments is supplied to a system or apparatus via a network or various storage media, and a computer (or CPU, MPU, etc.) of the system or apparatus reads the program code. It is a process to be executed. In this case, the program and the storage medium storing the program constitute the present invention.

204 Image sensor 207 Memory control unit 206 Image processing unit 210 System control unit

Claims (10)

Detecting means for detecting a defective pixel included in the solid-state imaging device from an image obtained by the solid-state imaging device;
The address of the defective pixel detected by the detection unit is removed from the second image obtained by the solid-state imaging device from the address of the defective pixel detected by the detection unit from the first image obtained by the solid-state imaging device. And a removing means for obtaining an address of a defective pixel having a predetermined characteristic ,
The first image is an image obtained by transferring the charge of the photodiode of the solid-state image sensor, and the second image is obtained without transferring the charge of the photodiode of the solid-state image sensor. imaging device, characterized in that the is image. When the solid-state image sensor higher than a predetermined temperature, the first address of a defective pixel detected by the detection unit from the image, to claim 1, characterized in that an address of a defective pixel of said predetermined characteristic The imaging device described. The detecting device, the imaging device according to a threshold in detecting defective pixels from an image obtained by the solid-to claim 1 or 2, characterized by changing the temperature of the solid-state imaging device. Subtracting means for subtracting the second image obtained by the solid-state image sensor from the first image obtained by the solid-state image sensor to obtain a difference image;
Wherein from the difference image obtained by subtracting means, and a detection means for detecting an address of a defective pixel of a predetermined characteristic in which the solid-state imaging device has,
The detecting means detects an address of a defective pixel from the first image when the solid-state imaging device is higher than a predetermined temperature, and uses the detected defective pixel address as an address of a defective pixel having the predetermined characteristic. An imaging apparatus characterized by the above. The first image is an image obtained by transferring the charge of the photodiode of the solid-state image sensor, and the second image is obtained without transferring the charge of the photodiode of the solid-state image sensor. The imaging apparatus according to claim 4 , wherein the imaging apparatus is an image. The said detection means changes the threshold value at the time of detecting the address of a defective pixel from the picked-up image acquired by the said solid-state image sensor with the temperature of the said solid-state image sensor, The Claim 4 or 5 characterized by the above-mentioned. Imaging device. The predetermined and the defective pixel characteristics, the imaging apparatus according to any one of claims 1 to 6 output characteristics characterized in that it is a defective pixel that is dependent on the temperature of the solid-state imaging device. The imaging apparatus according to any one of claims 1 to 7, characterized in that it comprises interpolating means for interpolating the pixel indicated by the address of a defective pixel of said predetermined characteristic. A defective pixel detection method in which a computer of an imaging apparatus including a solid-state imaging device detects a defective pixel of the solid-state imaging device,
A first detection step of detecting an address of a defective pixel included in the solid-state imaging device from a first image obtained by the solid-state imaging device;
A second detection step of detecting an address of a defective pixel included in the solid-state imaging device from a second image obtained by the solid-state imaging device;
Removing the defective pixel address detected in the second detection step from the defective pixel address detected in the first detection step to obtain a defective pixel address having a predetermined characteristic ; and Yes, and
The first image is an image obtained by transferring the charge of the photodiode of the solid-state image sensor, and the second image is obtained without transferring the charge of the photodiode of the solid-state image sensor. A defective pixel detection method characterized by being an image . A defective pixel detection method in which a computer of an imaging apparatus including a solid-state imaging device detects a defective pixel of the solid-state imaging device,
A subtraction step of subtracting a second image obtained by the solid-state imaging device from a first image obtained by the solid-state imaging device to obtain a difference image;
Wherein from the difference image resulting from the subtraction step, have a detection step of detecting an address of a defective pixel of a predetermined characteristic in which the solid-state imaging device has,
In the detecting step, when the solid-state imaging device is higher than a predetermined temperature, an address of the defective pixel is detected from the first image, and the detected defective pixel address is set as an address of the defective pixel having the predetermined characteristic. A defective pixel detection method characterized by the above.

Images