JP6094886B2 - Manufacturing method of semiconductor device and acrylic resin composition for semiconductor sealing used therefor - Google Patents

Description

  The present invention relates to a method for producing a semiconductor device and an acrylic resin composition for semiconductor encapsulation used therein. More specifically, the present invention relates to a method of manufacturing a semiconductor device in which electrical connection and curing of a sealing resin are simultaneously performed at the time of reflow by a method of previously supplying a sealing resin to a circuit board in flip chip mounting, and the semiconductor device is used for the method. The present invention relates to an acrylic resin composition for semiconductor encapsulation.

  In recent years, there has been a demand for higher density of flip chip type semiconductor devices having packages such as BGA (Ball grid array), LGA (Land grid array), and CSP (Chip size package). There is also a need to make it.

  In mounting a flip chip type semiconductor device, a bump electrode is formed by solder on a semiconductor chip of a mounting component, and a circuit board on which a mounting electrode pad provided to correspond to the bump electrode is formed, A semiconductor chip is placed face down. Then, the solder is melted by reflow treatment to directly connect the bump electrode and the electrode pad.

  In connection by mounting a flip-chip type semiconductor device, for example, in a temperature cycle test, there is a possibility that electrical connection failure may occur due to distortion due to thermal stress, and reliability may be a problem. That is, the thermal stress derived from the difference in thermal expansion coefficient between the semiconductor chip and the circuit board may concentrate on the connection part and break the connection part.

  As a method to increase reliability, after joining the electrodes by reflow treatment, the gap formed between the semiconductor chip and the circuit board is sealed with a resin composition, so that this thermal stress is dispersed and connection reliability is achieved. Underfill technology that enhances performance is widely used.

  As an underfill technology, a semiconductor chip is mounted on a circuit board, the electrodes are joined together by reflow treatment, and then a sealing resin (underfill resin) is injected into the gap between the circuit board and the semiconductor chip. The method is widely used.

  However, in this post-supply method, the reflow process, the sealing resin filling process and the subsequent curing process process are separate processes. There was a problem.

  In order to solve such a problem, in recent years, a pre-feeding method in which a sealing resin is supplied to a circuit board in advance before the reflow process has attracted attention (Patent Documents 1 to 4).

  In this prior supply method, before the semiconductor chip is bonded to the circuit board by thermocompression bonding, the semiconductor chip is mounted after the sealing resin is previously supplied to the circuit board by coating or the like. Then, by reflowing them, the sealing resin is cured by heating at the time of thermocompression bonding together with the bonding between the electrodes.

  In recent years, in the market trend of downsizing, weight reduction, and high functionality of electronic devices, higher integration and surface mounting of semiconductor devices are progressing year by year. For example, in order to meet the demand for higher pin count and higher speed, a semiconductor device having a package-on-package (package on package: PoP) structure in which semiconductor packages are stacked in the vertical direction has been developed.

  In many cases, the PoP semiconductor device uses a logic package in the lower stage and a memory package in the upper stage. For PoP semiconductor devices, only good logic packages and memory packages can be selected and used, and various combinations of memory capacity packages and logic packages can be freely used. It is particularly suitable for applications that need to be made.

  Conventionally, bumps formed of solder or gold have been used as bumps formed on a semiconductor chip. However, in order to cope with recent fine connection such as a semiconductor device having a PoP structure, Bump electrodes having a structure in which solder is formed at the tip have been used. In such a semiconductor device, sealing by the above-described first supply method is being studied.

  Conventionally, an epoxy resin composition has been proposed for the sealing resin of this first supply method (Patent Documents 1 to 3).

  However, the technique using this epoxy resin composition has a problem that voids remain in the sealing resin cured after reflow. As a cause of the generation of voids, volatilization of an uncured low molecular component contained in a solder resist that protects the surface of the circuit board can be cited.

  The voids left in the cured sealing resin may cause the solder to flow into the voids after reflow, or may reduce the reliability of bonding between the semiconductor chip and the circuit board.

  In addition, an acrylic thermosetting adhesive has also been studied for this first-supply type sealing resin (Patent Document 4). In this technique, a film-like acrylic thermosetting adhesive containing an organic peroxide having a high decomposition temperature near or exceeding the solder melting point is used as a radical initiator. Specifically, Patent Document 4 discloses that at least a part of bumps of a semiconductor chip is formed by using, as a polymerization initiator, an electrode of the circuit board in which at least a part of the solder is composed of solder having a melting temperature Ts (° C.) and a bump of the semiconductor chip. Connected by pressing from the semiconductor chip side with a flip chip bonder at the pressure bonding temperature T2 (° C.) through an acrylic thermosetting adhesive containing an organic peroxide with a minute half-life temperature T1 (° C.) It is described that Ts ≦ T2 and −5 ≦ T1−T2 ≦ 10 are satisfied when the connection structure is manufactured. For example, when lead-free solder such as Sn2.5Ag having a melting point of 221 ° C. is used, T1 is in the range of 216 to 241 ° C. ≦ T1 ≦ 231 to 250 ° C.

JP 2008-239822 A Special table 2004-530740 gazette JP 2009-242585 A JP 2011-243786 A

  However, recently, from the viewpoint of further improving the production efficiency of semiconductor devices, it has been desired to shorten the time required for bonding by a flip chip bonder. For example, 4 to 5 seconds from the time when the bonding head holding the semiconductor chip is grounded to the sealing resin on the circuit board of the stage until the solder is melted by heating, the sealing resin is cured, and the bonding head is raised from the stage. In some cases, it is required to carry out in a short time and in a high cycle.

  Patent Document 4 mainly assumes a conventional standard bonding process without assuming such a short time heating and pressure bonding process of 4 to 5 seconds. However, in the short time thermocompression bonding process of 4 to 5 seconds, when a radical initiator having a high decomposition temperature such as temperature T1 is used, first, thickening due to curing of the sealing resin in the initial stage of heating is performed. Since it is slow, the intrusion of voids from the circuit board cannot be suppressed, and secondly, since the decomposition temperature of the radical initiator is high, the curing reaction does not proceed sufficiently even after the solder is melted in a short time process, so that the semiconductor chip There is a problem that peeling occurs between the sealing resin and the sealing resin.

  In the first supply method, since the sealing resin is cured simultaneously with the thermocompression bonding, it is necessary to prevent the wetting of the solder from being inhibited by the curing. That is, when the curing of the sealing resin proceeds and the viscosity increases, deformation of the solder is hindered and sufficient wettability cannot be exhibited. In Patent Document 4, an activator is not blended. In that case, in a short heat-pressing process of 4 to 5 seconds, the wettability of the solder is bad and the reliability is adversely affected.

  The present invention has been made in view of the circumstances as described above, and in a flip chip mounting that simultaneously performs electrical connection and curing of the sealing resin during thermocompression bonding by a method of supplying the sealing resin to the circuit board first. The production efficiency can be improved by mounting and sealing in a very short time. Furthermore, the generation of voids from the circuit board is suppressed, the solder wettability is ensured, and the semiconductor chip and the sealing resin are separated. It is an object of the present invention to provide a method for manufacturing a semiconductor device that can be suppressed and an acrylic resin composition for semiconductor encapsulation used therein.

  In order to solve the above-described problems, a method of manufacturing a semiconductor device according to the present invention includes a thermosetting acrylic resin that is liquid at room temperature, and a one-minute half-life temperature of 150 to 180 ° C. that is a radical initiator of the thermosetting acrylic resin. An acrylic resin composition for semiconductor encapsulation containing an organic peroxide, an epoxy resin, a curing agent for the epoxy resin having a reaction start temperature of 180 ° C. or more, an activator, and an inorganic filler is used as an electrode pad of a circuit board. And a step of mounting the circuit board on a stage heated to a constant temperature in the range of 60 to 100 ° C. and bonding that holds the semiconductor chip and is heated to a constant temperature in the range of 100 to 160 ° C. The head is used for sealing the semiconductor on the circuit board mounted on the stage by aligning the bump electrodes of the semiconductor chip and the electrode pads of the circuit board. A lead having a melting point of 210 ° C. or more disposed on the bump electrode of the semiconductor chip from the constant temperature, the step of grounding the cryl resin composition and holding it within a range of 0.1 to 2 seconds; The step of raising the temperature within a range of 1 to 2.5 seconds up to a temperature equal to or higher than the melting point of the free solder, and the temperature of the bonding head is maintained within the range of 0.5 to 2 seconds at the predetermined temperature after the temperature rise. And the step of raising the bonding head from the stage within 5 seconds after the grounding, after curing the acrylic resin composition for semiconductor encapsulation.

  In this method of manufacturing a semiconductor device, the semiconductor chip preferably has a bump electrode having a structure in which the lead-free solder is formed at the tip of a copper pillar.

  In this method of manufacturing a semiconductor device, the acrylic resin composition for semiconductor encapsulation preferably contains an organic acid as the activator.

  In this method of manufacturing a semiconductor device, the acrylic resin composition for semiconductor encapsulation has a content of the activator of 0.1 to 20.0 mass% with respect to the total amount of the acrylic resin composition for semiconductor encapsulation. It is preferable to be within the range.

  In this method of manufacturing a semiconductor device, the acrylic resin composition for semiconductor encapsulation preferably has a maximum particle size of the inorganic filler of 10 μm or less.

  The acrylic resin composition for semiconductor encapsulation according to the present invention is mounted on a stage in which a sealing resin is supplied to a surface having an electrode pad of a circuit board and the circuit board is heated to a constant temperature within a range of 60 to 100 ° C. And mounting the bonding head, which holds the semiconductor chip and is heated to a constant temperature within a range of 100 to 160 ° C., on the stage by aligning the bump electrodes of the semiconductor chip and the electrode pads of the circuit board The step of grounding the sealing resin on the circuit board and holding it within a range of 0.1 to 2 seconds, and the temperature of the bonding head from the constant temperature to the bump electrode of the semiconductor chip A step of raising the temperature within a range of 1 to 2.5 seconds to a temperature not lower than the melting point of lead-free solder having a melting point of 210 ° C. or higher, and the temperature of the bonding head after the temperature increase. And holding the temperature within a range of 0.5 to 2 seconds to cure the acrylic resin composition for semiconductor encapsulation, and then raising the bonding head from the stage within 5 seconds from the grounding. A semiconductor sealing acrylic resin composition used as a sealing resin in a method for manufacturing a semiconductor device, which is a thermosetting acrylic resin that is liquid at room temperature, and a radical initiator for the thermosetting acrylic resin for 1 minute It contains an organic peroxide having an half-life temperature of 150 to 180 ° C., an epoxy resin, a curing agent for the epoxy resin having a reaction start temperature of 180 ° C. or more, an activator, and an inorganic filler.

  According to the present invention, it is possible to improve the production efficiency by mounting and sealing in a very short time, further suppress the generation of voids from the circuit board, ensure the wettability of the solder, and seal the semiconductor chip Peeling from the resin can be suppressed.

It is sectional drawing which shows typically an example of the manufacturing method of the semiconductor device of this invention. It is an example of the heating profile of the manufacturing method of the semiconductor device of this invention.

  The present invention is described in detail below.

  In the present invention, a thermosetting acrylic resin that is liquid at room temperature is blended with the acrylic resin composition for semiconductor encapsulation.

  By using a thermosetting acrylic resin and increasing the viscosity at the initial stage of heating during bonding by radical reaction, generation of voids in the sealing resin can be suppressed.

  Here, “liquid at normal temperature” means having fluidity in a temperature range of 5 to 28 ° C. under atmospheric pressure, particularly at a room temperature of 18 ° C.

  As a component used for the thermosetting acrylic resin, a compound having two or more (meth) acryloyl groups is preferable and 2 to 6 (meth) acryloyl groups are preferable in consideration of securing heat resistance. A compound is more preferable, and a compound having two (meth) acryloyl groups is more preferable.

  Examples of the compound having two (meth) acryloyl groups include ethylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, 1, 9-nonanediol di (meth) acrylate, 1,3-butanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, dimer diol di (meth) acrylate, dimethylol tricyclodecane di (meth) acrylate, etc. Is mentioned.

  Diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, tripropylene glycol di (meth) acrylate, polypropylene glycol di (meth) An acrylate etc. are mentioned.

  Also, glycerin di (meth) acrylate, trimethylolpropane di (meth) acrylate, pentaerythritol di (meth) acrylate, zinc di (meth) acrylate, cyclohexanediol di (meth) acrylate, cyclohexanedimethanol di (meth) acrylate, cyclohexane Examples include diethanol di (meth) acrylate, cyclohexanedialkyl alcohol di (meth) acrylate, dimethanol tricyclodecane di (meth) acrylate, and the like.

  Further, a reaction product of 1 mol of bisphenol A, bisphenol F or bisphenol AD and 2 mol of glycidyl acrylate, a reaction product of 1 mol of bisphenol A, bisphenol F or bisphenol AD and 2 mol of glycidyl methacrylate, and the like can be mentioned.

  Further, as the compound having two or more (meth) acryloyl groups, a (meth) acrylate having a crosslinked polycyclic structure represented by the following formula (I) or (II) is preferable. When a (meth) acrylate having this crosslinked polycyclic structure is used, a cured product having excellent heat resistance can be obtained.

(In the formula, R ¹ and R ² each independently represent a hydrogen atom or a methyl group, a is 1 or 2, and b is 0 or 1.)

(Wherein R ³ and R ⁴ each independently represent a hydrogen atom or a methyl group, X represents a hydrogen atom, a methyl group, a methylol group, an amino group, or a (meth) acryloyloxymethyl group, and c represents 0 or 1)
Examples of the (meth) acrylate having such a crosslinked polycyclic structure include a (meth) acrylate having a dicyclopentadiene skeleton in which a in the formula (I) is 1 and b is 0, and in the formula (II) a (meth) acrylate having a perhydro-1,4: 5,8-dimethananaphthalene skeleton in which c is 1, a (meth) acrylate having a norbornane skeleton in which c in the formula (II) is 0, the formula (I Dicyclopentadienyl diacrylate (tricyclodecane dimethanol diacrylate) in which R ¹ and R ² are hydrogen atoms and a = 1 and b = 0, and X in the formula (II) is acryloyloxymethyl Perhydro-1,4: 5,8-dimethananaphthalene-2,3,7-trimethylol triacrylate, wherein R ³ and R ⁴ are hydrogen atoms and c is 1 X, R ³ and R ^{4 in the} formula (II) are hydrogen atoms, and norbornane dimethylol diacrylate in which c is 0, X, R ³ and R ^{4 in the} formula (II) are hydrogen atoms, c Perhydro-1,4: 5,8-dimethananaphthalene-2,3-dimethylol diacrylate and the like. Of these, dicyclopentadienyl diacrylate and norbornane dimethylol diacrylate are preferable.

  Further, as a compound having two or more (meth) acryloyl groups, di (meth) acrylate having a structure in which an alkylene oxide is added to a bisphenol skeleton represented by the following formula (III) or (IV) is preferable. When di (meth) acrylate having a structure in which alkylene oxide is added to this bisphenol skeleton is used, a cured product having excellent heat resistance and adhesion can be obtained.

(In the formula, R ⁵ represents hydrogen, a methyl group, or an ethyl group, R ⁶ represents a divalent organic group, and m and n represent integers of 1 to 20.)

(In the formula, R ⁵ represents hydrogen, a methyl group, or an ethyl group, R ⁶ represents a divalent organic group, and m and n represent integers of 1 to 20.)
Examples of the di (meth) acrylate having a structure in which an alkylene oxide is added to the bisphenol skeleton include, for example, Aronix M-210, M-211B (manufactured by Toagosei), NK ester ABE-300, and A-BPE-4. A-BPE-6, A-BPE-10, A-BPE-20, A-BPE-30, BPE-100, BPE-200, BPE-500, BPE-900, BPE-1300N (manufactured by Shin-Nakamura Chemical) EO modified bisphenol A type di (meth) acrylate (n = 2 to 20) such as EO modified bisphenol F type di (meth) acrylate (n = 2 to 20) such as Aronix M-208 (manufactured by Toagosei), Dena PO-modified bisphenol such as coal acrylate DA-250 (manufactured by Nagase Kasei) and biscoat 540 (manufactured by Osaka Organic Chemical Industry) And PO-modified phthalic acid diacrylates such as diol A type di (meth) acrylate (n = 2 to 20) and Denacol acrylate DA-721 (manufactured by Nagase Kasei).

  Moreover, as a compound having two or more (meth) acryloyl groups, epoxy (meth) acrylate is preferable. When epoxy (meth) acrylate is used, a cured product excellent in reactivity, heat resistance, and adhesion can be obtained when an epoxy resin described later is used in combination.

  As the epoxy (meth) acrylate, an oligomer that is an addition reaction product of an epoxy resin and an unsaturated monobasic acid such as acrylic acid or methacrylic acid can be used. As the raw material epoxy resin, a diglycidyl compound (bisphenol type epoxy resin) obtained by condensation of bisphenols typified by bisphenols such as bisphenol A and bisphenol F and epihalohydrin can be used. In addition, as an epoxy resin having a phenol skeleton, a polyvalent glycidyl ether (phenol novolac-type epoxy resin, cresol novolak) obtained by condensation of phenol or cresol and phenol novolaks which are condensates of aldehydes typified by formalin and epihalohydrin is used. Type epoxy resin). An epoxy resin having a cyclohexyl ring can be used.

  As the epoxy (meth) acrylate, for example, a bisphenol A type epoxy acrylate represented by the following formula, which is a solid at 25 ° C. or a liquid having a viscosity of 10 Pa · s or more, can be preferably used.

(In the formula, n represents a positive integer.)
Commercially available products of bisphenol A type epoxy acrylate include, for example, Denacol acrylate DA-250 (Nagase Kasei, 60 Pa · s at 25 ° C.), Denacol acrylate DA-721 (Nagase Kasei, 100 Pa · s at 25 ° C.), Lipoxy VR-60 (Showa polymer, solid at room temperature), Lipoxy VR-77 (Showa polymer, 100 Pa · s at 25 ° C.), and the like.

  Other examples of the compound having three or more (meth) acryloyl groups include pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol pentaacrylate, ethoxylation (3) trimethylolpropane triacrylate, ethoxylation (6) Trimethylolpropane triacrylate, ethoxylated (9) trimethylolpropane triacrylate, propoxylated (6) trimethylolpropane triacrylate, propoxylated (3) glyceryl triacrylate, highly propoxylated (55) glyceryl triacrylate, ethoxylated ( 15) Trimethylolpropane triacrylate, trimethylolpropane trimethacrylate, tetraethylene glycol diacrylate, dimethylolpro Tetraacrylate, tripropylene glycol diacrylate, pentaacrylate ester, 1,3-adamantanediol dimethacrylate, 1,3-adamantanediol diacrylate, 1,3-adamantane dimethanol dimethacrylate, 1,3-adamantane dimethanol dimethacrylate An acrylate etc. are mentioned.

  An example of a preferable blend in the thermosetting acrylic resin has a structure in which 10 to 50% by mass of (meth) acrylate having a crosslinked polycyclic structure with respect to the total amount of the thermosetting acrylic resin and alkylene oxide is added to the bisphenol skeleton. It is within the range of 3 to 20% by mass of di (meth) acrylate and 5 to 30% by mass of epoxy (meth) acrylate.

  In addition to the above components, various vinyl monomers such as a monofunctional vinyl monomer may be added to the thermosetting acrylic resin.

  In the present invention, an organic peroxide having a 1 minute half-life temperature of 150 to 180 ° C., which is a radical initiator of a thermosetting acrylic resin, is blended in the acrylic resin composition for semiconductor encapsulation.

  By using an organic peroxide having such a decomposition temperature as a radical initiator, in the initial stage of heating in a short time thermocompression bonding process, the viscosity is increased rapidly to such an extent that solder wettability is not hindered. Intrusion of voids from the circuit board can be suppressed. Since the decomposition temperature is low, the curing reaction sufficiently proceeds between the temperature raising step of the bonding head and after the solder is melted, and the peeling between the semiconductor chip and the sealing resin can be suppressed.

  Examples of the organic peroxide include t-butyl peroxy-2-ethylhexyl monocarbonate (1 minute half-life temperature 161.4 ° C.), t-butyl peroxybenzoate (1 minute half-life temperature 166.8 ° C.), t-Butylcumyl peroxide (1 minute half-life temperature 173.3 ° C.), Dicumyl peroxide (1 minute half-life temperature 175.2 ° C.), α, α′-di (t-butylperoxy) diisopropylbenzene ( 1-minute half-life temperature 175.4 ° C.), 2,5-dimethyl-2,5-di (t-butylperoxy) hexane (1-minute half-life temperature 179.8 ° C.), and the like.

  Although it does not specifically limit as content of a radical initiator, 0.2-2 mass parts is preferable with respect to 100 mass parts of thermosetting acrylic resins. If it is in this range, the viscosity stability of the acrylic resin composition for semiconductor encapsulation is good, and a decrease in adhesion can also be suppressed.

  In the present invention, an epoxy resin and an epoxy resin curing agent having a reaction start temperature of 180 ° C. or higher are blended in the acrylic resin composition for semiconductor encapsulation.

  By compounding the epoxy resin, the reactivity during reflow is adjusted, and the wettability of the solder can be improved. Moreover, adhesiveness can be improved and bleeding can also be suppressed.

  By adding an epoxy resin curing agent having a reaction start temperature of 180 ° C. or higher, the epoxy resin curing reaction proceeds sufficiently between the bonding head heating step and after the solder is melted. Peeling from the stop resin can be suppressed.

  The reaction start temperature of the epoxy resin curing agent can be a temperature at which the heat generation amount starts increasing when the heat generation amount of the resin composition in a predetermined temperature range is measured by a DSC apparatus. The curing heat generation start temperature calculated according to the method of JIS K7121 is taken into consideration.

  As an epoxy resin, if it has 2 or more of epoxy groups in 1 molecule, the molecular weight and molecular structure will not be specifically limited, Various things can be used. Specifically, for example, various epoxy resins such as a glycidyl ether type, a glycidyl amine type, a glycidyl ester type, and an olefin oxidation type (alicyclic) can be used. More specifically, for example, bisphenol type epoxy resins such as bisphenol A type epoxy resins and bisphenol F type epoxy resins, hydrogenated bisphenol type epoxy resins such as hydrogenated bisphenol A type epoxy resins and hydrogenated bisphenol F type epoxy resins, Biphenyl type epoxy resin, naphthalene type epoxy resin, alicyclic epoxy resin, dicyclopentadiene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, triphenylmethane type epoxy resin, aliphatic epoxy resin, triglycidyl Isocyanurate and the like can be used. Among these, bisphenol-type epoxy resins, hydrogenated bisphenol-type epoxy resins, and naphthalene-type epoxy resins are preferable, and these epoxy equivalents are preferably in the range of 120 to 200.

  As for the compounding quantity of the epoxy resin in the acrylic resin composition for semiconductor encapsulation of this invention, 0.1-1 mass% is preferable with respect to the whole quantity of a resin component (Acrylic resin, an epoxy resin, the hardening | curing agent of an epoxy resin). Within this range, the solder wettability can be improved. Moreover, adhesiveness can be improved and bleeding can also be suppressed.

  Examples of the curing agent for the epoxy resin having a reaction start temperature of 180 ° C. or higher include isophthalic acid dihydrazide, (2,4-diamino-6- [2-undecylimidazolyl- (1)]-ethyl-S-triazine, And dicyandiamide, 2,4-diamino-6- [2-ethyl-4-methylimidazolyl- (1)]-ethyl-S-triazine, diaminomaleonitrile).

  As for the compounding quantity of the hardening | curing agent of the epoxy resin in the acrylic resin composition for semiconductor sealing of this invention, 2-10 mass% is preferable with respect to the whole quantity of an epoxy resin. Within this range, peeling between the semiconductor chip and the sealing resin can be suppressed.

  In the present invention, the acrylic resin composition for semiconductor encapsulation contains an activator. By blending the activator, the oxide film on the surface of the solder metal is removed by heating during reflow, and electrical connection reliability can be ensured.

  Although it does not specifically limit as an activator, For example, an organic acid, various amines, its salt, etc. can be used.

  Of these, organic acids are preferred as the activator. By using the organic acid, the wettability of the solder can be particularly improved.

  Examples of organic acids include abietic acid, glutaric acid, succinic acid, malonic acid, oxalic acid, adipic acid, pimelic acid, suberic acid, azelaic acid, diglycolic acid, thiodiglycolic acid, phthalic acid, isophthalic acid, terephthalic acid Acid, propanetricarboxylic acid, citric acid, tartaric acid and the like can be mentioned.

  Of these, abietic acid, glutaric acid, and oxalic acid are preferable because the wettability of solder can be particularly improved.

  The content of the activator is preferably in the range of 0.1 to 20% by mass and more preferably in the range of 1 to 10% by mass with respect to the total amount of the acrylic resin composition for semiconductor encapsulation. Within this range, the flux activity can be exhibited and the wettability between the solder and the electrode pad or bump electrode can be improved. Moreover, it can suppress that hardened | cured material becomes brittle or insulation reliability is impaired, and a bleed can also be suppressed.

  In this invention, an inorganic filler is mix | blended with the acrylic resin composition for semiconductor sealing. The thermal expansion coefficient of the cured product can be adjusted by blending the inorganic filler.

  Examples of the inorganic filler include silica powder such as fused silica (fused spherical silica and fused crushed silica), synthetic silica and crystalline silica, oxides such as alumina and titanium oxide, talc, fired clay, unfired clay, mica, Silicates such as glass, carbonates such as calcium carbonate, magnesium carbonate and hydrotalcite, hydroxides such as aluminum hydroxide, magnesium hydroxide and calcium hydroxide, sulfates such as barium sulfate, calcium sulfate and calcium sulfite Alternatively, borates such as sulfite, zinc borate, barium metaborate, aluminum borate, calcium borate, and sodium borate, and nitrides such as aluminum nitride, boron nitride, and silicon nitride can be used.

  Among these, fused silica, crystalline silica, and synthetic silica are preferable because heat resistance, moisture resistance, strength, and the like can be improved.

  The shape of the inorganic filler is not particularly limited, such as a crushed shape, a needle shape, a flake shape, and a spherical shape, but a spherical shape is preferably used from the viewpoint of dispersibility and viscosity control.

  The inorganic filler may be any size as long as the average particle size is smaller than the gap between the semiconductor chip and the circuit board when flip-chip connected. From the viewpoint of filling density and viscosity control, the average particle size is 10 μm. The following are preferable, those of 5 μm or less are more preferable, those of 3 μm or less are more preferable, and those of 0.2 to 3 μm are particularly preferable.

  Here, the average particle diameter can be measured, for example, by particle size distribution measurement by a laser light diffraction method. Moreover, an average particle diameter can be calculated | required as a median diameter.

  The inorganic filler preferably has a maximum particle size of 10 μm or less, and more preferably 0.5 to 10 μm. When the maximum particle size is 10 μm or less, a narrow gap of 20 μm or less can be handled. Further, when the maximum particle size is 0.5 μm or more, an increase in viscosity can be suppressed.

  Furthermore, in order to adjust the viscosity and physical properties of the cured product, two or more kinds of inorganic fillers having different particle diameters may be used in combination.

  In this invention, the compounding quantity of the inorganic filler in the acrylic resin composition for semiconductor sealing has preferable 25-75 mass% with respect to the whole quantity of the acrylic resin composition for semiconductor sealing. Within this range, the thermal expansion coefficient can be reduced to improve the connection reliability, and the viscosity can be increased too much to prevent the workability from decreasing.

  In the present invention, the acrylic resin composition for semiconductor encapsulation may further contain other additives within a range not impairing the effects of the present invention. Examples of such other additives include silane coupling agents, antifoaming agents, leveling agents, low stress agents, and pigments. However, it is preferable not to use a solvent.

  In this invention, the acrylic resin composition for semiconductor sealing can be manufactured in the following procedure, for example. The above components are blended simultaneously or separately, and stirring, dissolution, mixing, and dispersion are performed while performing heat treatment or cooling treatment as necessary. Next, an inorganic filler is added to this mixture, and an acrylic resin composition for semiconductor encapsulation can be obtained by stirring, mixing, and dispersing again while performing heat treatment and cooling treatment as necessary. . For this stirring, dissolution, mixing, and dispersion, a disper, a planetary mixer, a ball mill, three rolls, or the like can be used in combination.

  The acrylic resin composition for semiconductor encapsulation is preferably liquid at 25 ° C. from the viewpoints of workability and workability. The viscosity of the acrylic resin composition for semiconductor encapsulation is preferably 1 to 1000 Pa · s at 25 ° C., more preferably 1 to 500 Pa · s, and further preferably 1 to 200 Pa · s. preferable. When the viscosity is in this range, it is possible to suppress a decrease in workability when supplying the semiconductor sealing acrylic resin composition onto the circuit board. Here, the viscosity is a value when measured using an E-type rotational viscometer at 25 ° C. and a rotational speed of 0.5 rpm.

  This acrylic resin composition for semiconductor encapsulation is used in a mounting process in which a semiconductor chip is pressed against a circuit board after supplying the sealing resin onto the circuit board. In this mounting step, the electrical connection and the curing of the acrylic resin composition for semiconductor sealing are simultaneously performed by heating to a temperature equal to or higher than the melting point of the solder of the bump electrode.

  Specific examples of the semiconductor device of the present invention manufactured through this mounting process include flip-chip type semiconductor devices such as BGA, LGA, and CSP in which a semiconductor chip is mounted face-down on a circuit board. In addition, a PoP type semiconductor device that stacks and joins a plurality of flip chip type surface mount components can be used.

FIG. 1 is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device of the present invention, and FIG. 2 is an example of a heating profile of the method for manufacturing a semiconductor device of the present invention.
(Supply process)
As shown to Fig.1 (a), the said acrylic resin composition 30a for semiconductor sealing is supplied to the surface in which the electrode pad 14 of the circuit board 13 for mounting the semiconductor chip 10 was formed.

  As the circuit board 13, for example, a circuit board 13 in which an unnecessary portion of a metal layer such as copper formed on the surface of an insulating substrate such as glass epoxy, polyimide, polyester, or ceramic is removed by etching is used. it can. Further, it is possible to use a wiring pattern formed on the surface of the insulating substrate by copper plating or the like, or a wiring pattern formed by printing a conductive material on the surface of the insulating substrate.

  It is preferable that any surface treatment layer selected from a gold layer, a solder layer, a tin layer, and a rust preventive film layer is formed on the surface of the wiring pattern.

  The gold layer and the tin layer can be formed by electroless or electrolytic plating. The solder layer may be formed by plating, or may be formed by a method in which a solder paste is applied by printing and then heated and melted, or a method in which fine solder particles are placed on a wiring pattern and heated and melted.

  The anti-corrosion film layer (for example, Cu-OSP) is also called preflux, and by immersing the substrate in a dedicated chemical solution, the oxide film on the surface of the wiring pattern formed of copper or the like is removed, and an organic component is formed on the surface It is possible to form a rust-proof coating layer made of The rust preventive coating layer can secure good wettability with respect to the solder 12, and is suitable from the viewpoint of adapting to fine connection.

  The electrode pad 14 may be formed with a solder paste or a solder layer having a relatively low melting point, or with copper plating, Ni / Cu plating, or Sn plating.

  The method for supplying the acrylic resin composition 30a for semiconductor encapsulation is performed by coating or the like, and can be performed by, for example, a dispenser, screen printing, inkjet, or the like. It is desirable that the supply amount be an amount necessary for sealing and a minimum amount that is not excessive.

  As an apparatus for connecting the semiconductor chip 10 and the circuit board 13, for example, a normal flip chip bonder including a bonding head 20 and a stage 21 can be used.

The acrylic resin composition 30a for semiconductor sealing was supplied to the surface of the circuit board 13 having the electrode pads 14, and the circuit board 13 was heated to a constant temperature in the range of 60 to 100 ° C, preferably 70 to 100 ° C. It is mounted on the stage 21. The semiconductor sealing acrylic resin composition 30a is heated to the vicinity of this constant temperature.
(Grounding process)
Next, as shown in FIG. 1A, the semiconductor chip 10 is disposed in a predetermined position face down by the bonding head 20 of the flip chip bonder, and the semiconductor chip 10 and the circuit board 13 are aligned. The bonding head 20 is lowered and the bump electrode 11 of the semiconductor chip 10 is grounded to the electrode pad 14 of the circuit board 13 as shown in FIG.

  The bonding head 20 is heated to a constant temperature within a range of 100 to 160 ° C., and the bonding head 20 holding the semiconductor chip 10 is aligned with the bump electrodes 11 of the semiconductor chip 10 and the electrode pads 14 of the circuit board 13. Then, the semiconductor sealing acrylic resin composition 30a on the circuit board 13 mounted on the stage 21 is grounded and held for 0.1 to 2 seconds, preferably 0.1 to 1 second. After grounding as shown in FIG. 1B, the temperature of the circuit board 13 on the stage 21 rises sharply to the temperature of the bonding head 20.

  The semiconductor chip 10 is not particularly limited. For example, an elemental semiconductor such as silicon or germanium, a compound semiconductor such as gallium arsenide, or indium phosphide can be used.

  As the bump electrode 11 formed on the semiconductor chip 10, for example, a structure in which a solder 12 or a tin layer is formed at the tip of a copper pillar, a solder bump, a copper bump, a gold bump, or the like can be used. Considering the correspondence to fine connection, a bump electrode 11 having a structure in which solder 12 is formed at the tip of a copper pillar as shown in FIG. 1 is suitable.

As the solder 12, Sn-3.5Ag (melting point 221 ° C.), Sn-2.5Ag-0.5Cu-1Bi (melting point 214 ° C.), Sn-0.7Cu (melting point 227 ° C.), Sn-3Ag-0. Lead-free solder having a melting point of 210 ° C. or higher such as 5Cu (melting point: 217 ° C.) can be used.
(Temperature raising process)
After spreading the semiconductor sealing acrylic resin composition 30a between the semiconductor chip 10 and the circuit board 13 by grounding for 0.1 to 2 seconds, the temperature of the bonding head 20 is changed from the constant temperature of the semiconductor chip 10. The temperature rises within a range of 1 to 2.5 seconds up to a temperature higher than the melting point of the lead-free solder 12 having a melting point of 210 ° C. or higher disposed on the bump electrode 11 in consideration of productivity, control of rheological characteristics, wettability of the solder 12, and the like. Warm up.

  After grounding as shown in FIG. 1 (b), the circuit board 13 on the stage 21 of the flip chip bonder is heated to the temperature of the bonding head 20, and then the temperature of the bonding head 20 is raised to increase the bumps. The temperature is raised to a region above the melting point of the solder 12 of the electrode 11. Thereby, the solder 12 of the bump electrode 11 is melted as shown in FIG. 1C while the curing reaction of the acrylic resin composition 30a for semiconductor encapsulation proceeds.

  Here, by using an organic peroxide having a half-life temperature of 150 to 180 ° C. as a radical initiator of the acrylic resin composition 30a for semiconductor encapsulation, the wettability of the solder 12 is quickly prevented to be not impaired. It is possible to suppress the intrusion of voids from the circuit board 13 by increasing the viscosity. Then, the curing reaction sufficiently proceeds between the temperature raising step of the bonding head 20 and after the solder is melted, and the peeling between the semiconductor chip and the sealing resin can be suppressed. Then, by using an epoxy resin curing agent having a reaction start temperature of 180 ° C. or higher, the curing reaction of the epoxy resin at a high temperature sufficiently proceeds from the temperature raising step of the bonding head 20 to after the solder is melted, Peeling between the semiconductor chip and the sealing resin can be suppressed.

  It is important how to control the expression of the rheology, curability, and activity of the activator of the acrylic resin composition 30a for semiconductor encapsulation in the region of the heating profile from FIG. 1 (b) to FIG. 1 (c). is there. In this region, first, the acrylic resin composition 30a for semiconductor encapsulation whose viscosity has been reduced by heating is excluded from between the bump electrode 11 and the electrode pad 14, and the oxide film on the surface of the solder 12 is reduced by an activator and removed. To do.

  When a solid activator is used at room temperature, it is heated to a temperature equal to or higher than its melting point or softening point to become a liquid or low-viscosity state so that it is uniformly wetted on the surface of the solder 12 necessary for exhibiting flux activity. Become. However, since the temperature does not reach the melting point of the solder 12, the connection portion is not formed by metal bonding.

Here, when the semiconductor sealing acrylic resin composition 30a starts to gel before the solder 12 flows, the gelled semiconductor sealing acrylic resin composition 30a flows to form an electrical connection. Disturb. Although details are not shown in FIG. 1 at the time of grounding in FIG. 1B, the shape of the solder 12 is actually crushed by the applied pressure. Here, when the curing of the acrylic resin composition 30a for semiconductor encapsulation is quick, the wetting of the solder 12 is suppressed and the grounded shape is maintained. On the other hand, when the solder 12 is melted, if the semiconductor sealing acrylic resin composition 30 a has fluidity, the solder 12 wets well with respect to the electrode pads 14 and the bump electrodes 11. That is, in order to wet well, it is necessary to add an activator and adjust the reactivity of the acrylic resin composition 30a for semiconductor encapsulation.
(High temperature holding process)
Next, the temperature of the bonding head 20 is maintained at the temperature after the temperature rise, and the acrylic resin composition 30a for semiconductor encapsulation is cured. That is, as shown in FIG. 1C, the solder 12 is melted and held at a peak temperature equal to or higher than the melting point of the solder 12, and the semiconductor chip 10 and the circuit board 13 are connected by metal bonding with the solder 12, and As shown in FIG. 1D, the semiconductor sealing acrylic resin composition 30a is cured to obtain a cured product 30b.

  The heating time maintained at the peak temperature equal to or higher than the melting point of the solder 12 is in the range of 0.5 to 2 seconds in consideration of productivity, control of rheological characteristics, wettability of the solder 12, and the like. When general lead-free solder is used, the peak temperature is usually in the range of 200 to 300 ° C, preferably in the range of 200 to 280 ° C, more preferably in the range of 220 to 260 ° C.

  Here, as a curing agent for the epoxy resin of the acrylic resin composition 30a for semiconductor encapsulation, a curing agent having a reaction start temperature of 180 ° C. or higher is used, so that the process from the temperature rising step of the bonding head 20 to after solder melting In the meantime, the curing reaction of the epoxy resin proceeds sufficiently, and the peeling between the semiconductor chip and the sealing resin can be suppressed.

  And as shown in FIG.1 (d), after hold | maintaining the acrylic resin composition 30a for semiconductor sealing and forming the hardened | cured material 30b, keeping at the temperature more than melting | fusing point of the solder 12, FIG.1 (e) As shown, the heating head 20 is raised from the semiconductor chip 10. The pressurizing conditions in the heating profiles from FIG. 1B to FIG. 1D are not particularly limited and can be appropriately set depending on the area of the semiconductor chip 10 and the number of bump electrodes 11. In consideration of eliminating the resin from between the electrode 11 and the electrode pad 14 and preventing the semiconductor chip 10 from being damaged such as cracks, the area of the semiconductor chip 10 is within a range of 10 to 50N. Preferably, the range of 15-40N is more preferable.

  The heating profile from the grounding in FIG. 1B to the resin curing in FIG. 1D is performed within a total range of 5 seconds, preferably within a range of 3 to 5 seconds.

  The semiconductor device thus obtained includes a semiconductor chip on which a plurality of bump electrodes are formed, a circuit board having a plurality of electrode pads electrically connected to the bump electrodes, and the circuit board and the semiconductor chip. And an arranged sealing resin.

  The electrically connected semiconductor device has a configuration in which bump electrodes exist in a columnar shape in a parallel gap between the semiconductor chip and the circuit board.

  The sealing resin is formed from a cured product of an acrylic resin composition for semiconductor sealing, and seals the gap between the circuit board and the semiconductor chip.

  The circuit board includes an insulating substrate such as an interposer and a wiring pattern provided on one surface of the circuit board. The wiring pattern of the circuit board and the semiconductor chip are electrically connected by a plurality of bump electrodes and electrode pads.

  The circuit board is also provided with an electrode pad on the surface opposite to the surface on which the wiring pattern is provided, and the electrode pad is electrically connected to the wiring pattern through the circuit board. Solder balls may be provided on the electrode pads. In this case, the solder bumps can be formed by a screen printing method or a solder ball method. In the screen printing method, a solder alloy is made into fine solder powder, and then mixed with flux to form a paste. Next, squeezing is performed on the electrode pad using a metal mask, and after a certain amount of paste is placed on the electrode pad, solder bumps can be formed by reflowing. In the method using solder balls, solder bumps can be formed by arranging and reflowing solder balls on electrode pads coated with flux or paste.

  In a semiconductor device having a PoP structure in which semiconductor packages are stacked in the vertical direction, for example, a logic package is used in the lower stage and a memory package is mounted in the upper stage. The acrylic resin composition for semiconductor encapsulation of the present invention can be used for the underfill of the lower logic package.

  The semiconductor device of the present invention can be used for mobile devices such as a mobile phone, a multi-function mobile phone, a portable information terminal, a digital camera, and a notebook computer.

  EXAMPLES Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

As the blending components shown in Table 1, the following were used.
(Thermosetting acrylic resin)
・ EO modified bisphenol A type diacrylate, 30 oxyethylene groups
・ Tricyclodecane dimethanol diacrylate ・ Bisphenol A type epoxy acrylate (radical initiator)
Organic peroxide, dicumyl peroxide (1 minute half-life temperature 175.2 ° C)
Organic peroxide, α, α′-di (t-butylperoxy) diisopropylbenzene (1 minute half-life temperature 175.4 ° C.)
The organic oxide used had a purity of 98% or more.
(Epoxy resin)
・ Bisphenol A type epoxy resin, epoxy equivalent 175
・ Bisphenol F type epoxy resin, epoxy equivalent 160
-Naphthalene type epoxy resin, epoxy equivalent 136-148
(Curing agent for epoxy resin)
・ Isophthalic acid dihydrazide amine (Fujicure 7000)
(Inorganic filler)
・ Synthetic silica, average particle size 2.5μm
(Active agent)
・ Abietic acid, glutaric acid, succinic acid, oxalic acid (epoxy resin)
・ Bisphenol A type epoxy resin, epoxy equivalent 175
・ Bisphenol F type epoxy resin, epoxy equivalent 160
Each component was mix | blended with the compounding quantity shown in Table 1, and the acrylic resin composition for semiconductor sealing was prepared by stirring, melt | dissolving, mixing, and disperse | distributing according to a conventional method.

  The following evaluation was performed about the acrylic resin composition for semiconductor sealing of the Example and comparative example which were prepared in this way.

  A semiconductor chip (size 7.3 mm × 7.3 mm, bump pitch 50 μm, number of bumps 544, thickness) on which a bump electrode having a structure having a lead-free solder layer (Sn-3.5Ag: melting point 221 ° C.) is formed at the tip of the copper pillar. 0.15 mm), and a glass epoxy substrate having a copper wiring pattern on the surface of which a rust preventive film was formed by preflux treatment was prepared as a circuit board.

  Subsequently, the circuit board was adsorbed and fixed on a stage set to 60 to 100 ° C. of a flip chip bonder, and 3.0 to 4.0 mg of an acrylic resin composition for semiconductor encapsulation was dispensed.

  After aligning the semiconductor chip with the circuit board, pressure bonding is performed at a head temperature of 100 to 160 ° C. for 0.1 to 2 seconds, and then the flip chip bonder head temperature is set to the bump electrode of the semiconductor chip with a melting point of 221 ° C. The temperature was raised within a range of 1 to 2.5 seconds (load 15 to 40 N) to an ultimate temperature (220 to 260 ° C.) that is higher than the melting point of lead-free solder.

After maintaining the temperature of the bonding head at a predetermined temperature after the temperature rise in a range of 0.5 to 2 seconds, the bonding head was raised from the stage in about 4 seconds after grounding.
[void]
About the sample produced on the said conditions, it observed with the image of the ultrasonic flaw detector (SAT: Hitachi Engineering Co., Ltd.), and evaluated the number of voids with the following reference | standard based on the average value of ten samples.
○: Zero voids △: Zero voids under the chip, 1 to 5 voids outside the peripheral ×: One or more voids under the chip
[Wet spread]
About the sample produced on the said conditions using the composition according to Table 1, the solder ball was mounted on resin and the solder was fuse | melted on the heated hotplate. Whether or not the solder was sufficiently wet was evaluated according to the following criteria based on the wet spreading rate at this time.
○: Wetting spread rate 55% or more Δ: Wetting spread rate 50% or more ×: Wetting spread rate less than 50%
[Adhesion]
NCP (acrylic resin composition for semiconductor encapsulation) is applied on a ceramic substrate, and a silicon wafer chip cut into a 2 mm square with a polyimide treatment on the adhesive surface is mounted, and the resin is applied in a curing furnace at 250 ° C. for 10 min. Cured. Thereafter, the adhesion was evaluated according to the following criteria.
○: 60 MPa or more Cohesive failure ×: Less than 60 MPa Chip / NCP interface peeling or cohesive failure
[reliability]
A temperature cycle test (−55 ° C. to 125 ° C.) was conducted and evaluated according to the following criteria.
○: Resistance increase is less than 10% at 1000 cycles. Δ: Resistance increase is at least 10% at 500 cycles or more and less than 1000 cycles. X: Resistance increase is at least 10% at 100 cycles Table 1 shows the evaluation results.

  From Table 1, a thermosetting acrylic resin that is liquid at room temperature, an organic peroxide having a half-life temperature of 150 to 180 ° C. that is a radical initiator of the thermosetting acrylic resin, an epoxy resin, and a reaction starting temperature of 180 ° C. In the acrylic resin composition for semiconductor encapsulation of Examples 1 to 7 containing the epoxy resin curing agent, activator, and inorganic filler as described above, voids were suppressed and wettability was also good. Moreover, it was excellent in the adhesiveness between the chip and the sealing resin and had reliability.

  On the other hand, Comparative Example 1 in which the epoxy resin curing agent having a reaction start temperature of 180 ° C. or higher was not blended, the epoxy resin was not sufficiently cured from the bonding head temperature raising step to after the solder was melted, The adhesion between the semiconductor chip and the sealing resin was lowered. In Comparative Example 2 in which no activator was blended, the wettability was further deteriorated. In Comparative Examples 4 and 5 in which an epoxy resin and its curing agent are not blended with a liquid thermosetting acrylic resin that is liquid at room temperature, both Comparative Example 4 in which no activator is blended and Comparative Example 5 in which an activator is blended are voids. There has occurred.

DESCRIPTION OF SYMBOLS 10 Semiconductor chip 11 Bump electrode 13 Circuit board 14 Electrode pad 20 Bonding head 21 Stage 30a Acrylic resin composition 30b for semiconductor sealing Hardened | cured material

Claims (6)

Thermosetting acrylic resin that is liquid at room temperature, organic peroxide having a half-life temperature of 150 to 180 ° C., which is a radical initiator of the thermosetting acrylic resin, epoxy resin, and reaction initiation temperature of 180 ° C. or higher An acrylic resin composition for semiconductor encapsulation containing an epoxy resin curing agent, an activator, and an inorganic filler is supplied to the surface of the circuit board having the electrode pads, and the circuit board is within a range of 60 to 100 ° C. Mounting on a stage heated to a constant temperature;
The circuit board on which a bonding head that holds a semiconductor chip and is heated to a constant temperature within a range of 100 to 160 ° C. is mounted on the stage by aligning the bump electrodes of the semiconductor chip and the electrode pads of the circuit board A step of grounding the acrylic resin composition for semiconductor encapsulation above and holding within a range of 0.1 to 2 seconds;
Increasing the temperature of the bonding head from the constant temperature to a temperature not lower than the melting point of lead-free solder having a melting point of 210 ° C. or higher disposed on the bump electrode of the semiconductor chip within a range of 1 to 2.5 seconds; ,
Within 5 seconds after the grounding, the bonding head temperature is maintained within the range of 0.5 to 2 seconds at the predetermined temperature after the temperature rise to cure the acrylic resin composition for semiconductor encapsulation. And a step of raising the bonding head from the stage.   The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor chip has a bump electrode having a structure in which the lead-free solder is formed at a tip of a copper pillar.   The method for manufacturing a semiconductor device according to claim 1, wherein the acrylic resin composition for semiconductor encapsulation contains an organic acid as the activator.   The said acrylic resin composition for semiconductor sealing has content of the said active agent in the range of 0.1-20.0 mass% with respect to the whole quantity of the acrylic resin composition for semiconductor sealing. A method for manufacturing a semiconductor device according to any one of claims 1 to 3.   5. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor sealing acrylic resin composition has a maximum particle size of the inorganic filler of 10 μm or less. A step of supplying a sealing resin to the surface of the circuit board having the electrode pads and mounting the circuit board on a stage heated to a constant temperature in the range of 60 to 100 ° C .; and 100 to 160 ° C. holding the semiconductor chip. The bonding head heated to a constant temperature within the range of is aligned with the bump electrode of the semiconductor chip and the electrode pad of the circuit board, and is grounded to the sealing resin on the circuit board mounted on the stage. The step of holding within a range of 0.1 to 2 seconds, and the temperature of the bonding head from the constant temperature to a temperature equal to or higher than the melting point of lead-free solder having a melting point of 210 ° C. or higher disposed on the bump electrode of the semiconductor chip Until the temperature of the bonding head is maintained within the range of 0.5 to 2 seconds at the predetermined temperature after the temperature increase. A semiconductor encapsulant used as the encapsulating resin in a method for manufacturing a semiconductor device, comprising: curing the acrylic resin composition for encapsulating a semiconductor, and then raising the bonding head from the stage within 5 seconds from the grounding. An acrylic resin composition for stopping,
Thermosetting acrylic resin that is liquid at room temperature, organic peroxide having a half-life temperature of 150 to 180 ° C., which is a radical initiator of the thermosetting acrylic resin, epoxy resin, and reaction initiation temperature of 180 ° C. or higher An acrylic resin composition for semiconductor encapsulation, comprising an epoxy resin curing agent, an activator, and an inorganic filler.

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