JP6047007B2 - Preparation method of evaluation sample and evaluation method of film - Google Patents

Description

  The present invention relates to products (products, including machines, products, manufactures, compositions (compositions of matter)) and methods (processes, including simple methods and production methods). In particular, one embodiment of the present invention relates to a semiconductor device, a light-emitting device, a display device, a driving method thereof, or a manufacturing method thereof. Another embodiment of the present invention relates to a method for evaluating a film used for a semiconductor device, a light-emitting device, or a display device.

  Note that in this specification and the like, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and includes a transistor, a semiconductor circuit, a memory device, an imaging device, an electro-optical device, a power generation device (thin film solar cell, It can be said that all of the electronic devices and the like (including organic thin film solar cells) are semiconductor devices.

  Research and development of a light-emitting element (also referred to as an organic EL element) using an organic electroluminescence (EL) phenomenon has been actively conducted. The basic structure of the organic EL element is such that a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. By applying voltage to this element, light emission from the light-emitting organic compound can be obtained. Since the organic EL element can be formed in a film shape, a large-area element can be easily formed, and the utility value as a surface light source applicable to illumination or the like is high.

  Further, a technique for forming a transistor using a semiconductor thin film has attracted attention. The transistor is widely applied to an electronic device such as an integrated circuit (IC) or a display device. A silicon-based semiconductor material is widely known as a semiconductor thin film applicable to a transistor, but an oxide semiconductor has attracted attention as another material.

  For example, Patent Document 1 discloses a transistor using an amorphous oxide containing indium (In), gallium (Ga), and zinc (Zn) as an active layer of the transistor.

JP 2006-165528 A

  The organic EL element has a problem that reliability is impaired by moisture and impurities entering from the outside. In some cases, moisture or impurities enter the organic compound or metal material constituting the organic EL element from the outside, so that the lifetime of the organic EL element may be significantly reduced. This is because an organic compound or a metal material used for the organic EL element reacts with moisture or impurities and deteriorates.

  In addition, the electrical conductivity of an oxide semiconductor may change if it deviates from the stoichiometric composition due to lack of oxygen or the like, or hydrogen or water that forms an electron donor in the device manufacturing process occurs. There is. Such a phenomenon becomes a variation factor of electrical characteristics for a semiconductor element such as a transistor including an oxide semiconductor.

  As described above, in a device such as a semiconductor device, a light-emitting device, or a display device, the electrical characteristics of the semiconductor element, the light-emitting element, and the like may be deteriorated due to components contained in the atmosphere.

  In order to protect the elements included in the device, a protective layer that suppresses mixing of components in the atmosphere into the device as much as possible and an appropriate method for forming the protective layer are required.

  An object of one embodiment of the present invention is to improve the reliability of a device such as a semiconductor device, a light-emitting device, or a display device. Another object of one embodiment of the present invention is to provide a method for evaluating a function as a protective layer.

  Thus, an object of one embodiment of the present invention is to provide a novel semiconductor device. Another object of one embodiment of the present invention is to provide a novel light-emitting device. Another object of one embodiment of the present invention is to provide a novel display device.

  Another object of one embodiment of the present invention is to provide a light-emitting device or a display device that is difficult to break. Another object of one embodiment of the present invention is to provide a light-emitting device or a display device that can be bent easily. Another object of one embodiment of the present invention is to provide a light-emitting device or a display device that is light in weight.

  Another object of one embodiment of the present invention is to provide a semiconductor device with high reliability and stable electrical characteristics. Another object of one embodiment of the present invention is to provide a semiconductor device with favorable electrical characteristics. Another object of one embodiment of the present invention is to provide a semiconductor device with little variation in electrical characteristics.

  Note that the description of these problems does not disturb the existence of other problems. Note that one embodiment of the present invention does not have to solve all of these problems. Issues other than these will be apparent from the description of the specification, drawings, claims, etc., and other issues can be extracted from the descriptions of the specification, drawings, claims, etc. It is.

  In one embodiment of the present invention, a separation layer is formed over a first substrate, an evaluation film is formed over the separation layer, a detection layer is formed over the evaluation film, and a barrier layer that covers the detection layer is formed A method for producing an evaluation sample, wherein a second substrate facing the first substrate is provided on the barrier layer via an adhesive layer, and the first substrate is removed by peeling between the peeling layer and the film to be evaluated. It is.

  In another embodiment of the present invention, an island-shaped release layer is formed over a first substrate, an evaluation film is formed to cover the release layer, a detection layer is formed over the evaluation film, and detection is performed. Forming a barrier layer covering the layer, providing a second substrate opposite to the first substrate on the barrier layer with an adhesive layer interposed therebetween, and outer peripheries of the first substrate and the second substrate so as to divide the release layer This is a method for producing an evaluation sample, in which a part is cut and peeled between the peeling layer and the film to be evaluated to remove the first substrate.

  In another embodiment of the present invention, an evaluation sample is produced by the method for producing an evaluation sample of the above-described embodiment of the present invention, the evaluation sample is exposed to a test environment, and the detection layer in the evaluation sample is optically observed. Then, the area of the region where the optical characteristics of the detection layer are changed is measured, and the gas permeation amount (gas permeation amount) of the film to be evaluated is calculated based on the area and the exposure time.

  By applying one embodiment of the present invention, reliability of a device such as a semiconductor device, a light-emitting device, or a display device can be improved. Alternatively, a method for evaluating the function as a protective layer can be provided.

FIG. 14 illustrates an example of a display device of one embodiment of the present invention. FIG. 14 illustrates an example of a display device of one embodiment of the present invention. 8A and 8B illustrate a method for manufacturing an evaluation sample according to Embodiment. 8A and 8B illustrate an evaluation sample manufacturing method and a film evaluation method according to an embodiment. FIG. 6 illustrates an example of a semiconductor device of one embodiment of the present invention. FIG. 6 illustrates an example of a light-emitting device of one embodiment of the present invention. FIG. 14 illustrates an example of an electronic device of one embodiment of the present invention. FIG. 14 illustrates an example of an electronic device of one embodiment of the present invention. FIG. 14 illustrates an example of an electronic device of one embodiment of the present invention.

  Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

  Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated. In addition, in the case where the same function is indicated, the hatch pattern is the same, and there is a case where no reference numeral is given.

  In addition, the position, size, range, and the like of each component illustrated in the drawings and the like may not represent the actual position, size, range, or the like for easy understanding. Therefore, the disclosed invention is not necessarily limited to the position, size, range, or the like disclosed in the drawings and the like.

(Embodiment 1)
In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

The display device of one embodiment of the present invention includes a transistor, a light-emitting element, and an insulating layer with high gas barrier properties (low gas permeability). The insulating layer having a high gas barrier property is applied to, for example, a base film, a gate insulating layer or a protective layer of a transistor, or a protective layer of a light-emitting element. For example, the water vapor permeation amount of the insulating layer having a high gas barrier property is 1 × 10 ⁻⁴ [g / m ² · day] in a high temperature and high humidity environment (for example, temperature 65 ° C., humidity 95%, 1 atm). Or less, preferably 1 × 10 ⁻⁵ [g / m ² · day] or less, more preferably 1 × 10 ⁻⁶ [g / m ² · day] or less, more preferably 1 × 10 ⁻⁷ [g / m ² · Day] or less, more preferably 1 × 10 ⁻⁸ [g / m ² · day] or less. With such an insulating layer, a highly reliable display device can be realized.

  An example of a method for evaluating the gas barrier property (gas permeability) of the membrane will be described in detail in Embodiment 2. The display device of one embodiment of the present invention includes an insulating layer using a material whose gas barrier property (gas permeability) is evaluated using the film evaluation method of one embodiment of the present invention as a component. By using a material that is evaluated to have sufficiently high gas barrier properties (gas permeability is sufficiently low), in one embodiment of the present invention, a highly reliable display device can be realized.

[Configuration Example 1 of Display Device]
FIG. 1A shows a schematic top view of a display device 200 that employs a top emission method.

  The display device 200 includes a display portion 201, a scan line driver circuit 202, and a signal line driver circuit 203 on the upper surface of the flexible substrate 254. In addition, the display device 200 includes an adhesive layer 252 that covers the display portion 201 and a flexible substrate 253 over the adhesive layer 252. In addition, the display device 200 includes an external connection terminal 204 over the flexible substrate 254 that is electrically connected to the scan line driver circuit 202 and the signal line driver circuit 203, and is electrically connected to the external connection terminal 204. The FPC 205 can input signals such as a power supply potential and a driving signal for driving the scanning line driving circuit 202, the signal line driving circuit 203, and the like from the outside.

  FIG. 1B is a schematic cross-sectional view taken along cutting lines AB and CD for cutting a region including the external connection terminal 204, the scanning line driver circuit 202, and the display portion 201.

  The display device 200 includes an insulating layer 255 over a flexible substrate 254 with an adhesive layer 251 interposed therebetween. The display device 200 includes an element layer 270 including a light emitting element 240 and a scan line driver circuit 202 (and a signal line driver circuit 203) and an external connection terminal 204 over an insulating layer 255.

  The external connection terminal 204 is composed of a conductive layer constituting a transistor or a light emitting element in the display device 200. In this structural example, a conductive layer that forms a gate of a transistor and a conductive layer that forms an electrode are stacked. As described above, the external connection terminal 204 is formed by stacking a plurality of conductive layers, which is preferable because the strength can be increased. In addition, a connection body 206 is provided in contact with the external connection terminal 204, and the FPC 205 and the external connection terminal 204 are electrically connected through the connection body 206. As the connection body 206, a paste-like or sheet-like material in which metal particles are mixed with a thermosetting resin can be used, and a material that exhibits anisotropic conductivity by thermocompression bonding can be used. As the metal particles, it is preferable to use particles in which two or more kinds of metals are layered, for example, nickel particles coated with gold.

  FIG. 1B illustrates an example in which the scan line driver circuit 202 includes an NMOS circuit in which an n-channel transistor 211 and a transistor 212 are combined. Note that the scan line driver circuit 202 is not limited to an NMOS circuit, and may include a variety of CMOS circuits in which n-channel transistors and p-channel transistors are combined, or a PMOS circuit in which p-channel transistors are combined. . The same applies to the signal line driver circuit 203. Further, although this configuration example shows a driver-integrated configuration in which the scanning line driver circuit 202 and the signal line driver circuit 203 are formed on the insulating surface on which the display portion 201 is formed, the insulating portion on which the display portion 201 is formed is shown. In addition to the surface, one or both of the scan line driver circuit 202 and the signal line driver circuit 203 may be provided.

  FIG. 1B illustrates a cross-sectional structure of one pixel as an example of the display portion 201. The pixel includes a switching transistor 213, a current control transistor 214, and a first electrode 233 electrically connected to an electrode (source electrode or drain electrode) of the current control transistor 214. In addition, an insulating layer 219 that covers an end portion of the first electrode 233 is provided.

  The light-emitting element 240 is a stacked body in which a first electrode 233, an EL layer 235, and a second electrode 237 are stacked in this order over an insulating layer 217. Since the display device 200 illustrated in this structural example is a top emission display device, a light-transmitting material is used for the second electrode 237. A reflective material is preferably used for the first electrode 233. The EL layer 235 includes at least a light-emitting organic compound.

  When a voltage is applied between the first electrode 233 and the second electrode 237 that sandwich the EL layer 235, the light-emitting element can emit light.

  The light emitting element 240 is covered with a protective layer 239.

  Here, a layer including the light emitting element 240 is referred to as an element layer 270. The element layer 270 includes at least the light-emitting element 240 and may include components (eg, a transistor and a wiring) other than the light-emitting element 240. In this embodiment, the layer including the transistor, the light-emitting element 240, and the protective layer 239 corresponds to the element layer 270. Specifically, in this configuration example, a stack from the upper surface of the insulating layer 255 to the protective layer 239 is referred to as an element layer 270.

  The display device 200 includes an insulating layer 223 on a surface of the flexible substrate 253 facing the light emitting element 240, and a color filter 221 at a position overlapping the light emitting element 240 on the surface of the insulating layer 223 facing the light emitting element 240. The black matrix 222 is provided at a position overlapping the insulating layer 219.

  The insulating layer 223 and the insulating layer 255 suppress diffusion of impurities contained in the flexible substrate 253 and the flexible substrate 254, respectively. The insulating layers 216 and 218 in contact with the semiconductor layer of the transistor preferably suppress diffusion of impurities into the semiconductor layer. For these insulating layers, for example, a semiconductor such as silicon or a metal oxide or nitride such as aluminum can be used. Alternatively, a stacked film of such an inorganic insulating material or a stacked film of an inorganic insulating material and an organic insulating material may be used.

  In the display device 200, an insulating layer having a high gas barrier property is used as at least one of the insulating layer 216, the insulating layer 217, the insulating layer 218, the insulating layer 219, the insulating layer 223, the insulating layer 255, and the protective layer 239. Thereby, a highly reliable light-emitting device can be realized. Note that the present invention is not limited thereto, and for example, an insulating layer having a high gas barrier property may be provided as a part of a flexible substrate or an overcoat layer.

  Each insulating layer included in the display device 200 includes, for example, aluminum nitride, aluminum oxide, aluminum nitride oxide, aluminum oxynitride, magnesium oxide, gallium oxide, silicon nitride, silicon oxide, silicon nitride oxide, silicon oxynitride, germanium oxide, and oxide. A material selected from zirconium, lanthanum oxide, neodymium oxide, tantalum oxide, or the like is formed as a single layer or a stacked layer. Note that in this specification, nitridation oxidation is a composition whose nitrogen content is higher than oxygen, and oxynitridation is a composition whose oxygen content is higher than nitrogen. Indicates. In addition, content of each element can be measured using RBS etc., for example.

The insulating layer includes hafnium silicate (HfSiO _x ), hafnium silicate added with nitrogen (HfSi _x O _y N _z ), hafnium aluminate added with nitrogen (HfAl _x O _y N _z ), hafnium oxide, A high-k material such as yttrium oxide may be used.

[Configuration Example 2 of Display Device]
In this configuration example, a display device employing a bottom emission method will be described. In addition, about the part which overlaps with the said structural example 1, description is abbreviate | omitted or simplified.

  FIG. 2 is a schematic cross-sectional view of the display device 250 exemplified in this configuration example.

  The display device 250 is different from the display device 200 exemplified in the configuration example 1 in that the color filter 221 is provided on the surface where the element layer 270 is formed with respect to the light emitting element 240.

  In the light-emitting element 240, a light-transmitting material is used for the first electrode 233 and a reflective material is used for the second electrode 237. Therefore, light emission from the EL layer 235 is emitted to the flexible substrate 254 side.

  In addition, a color filter 221 is provided on the insulating layer 218 covering the transistor so as to overlap with the light-emitting element 240. Further, an insulating layer 217 is provided so as to cover the color filter 221.

  Here, the insulating layer 217, the insulating layer 218, the insulating layer 216, the insulating layer 255, the adhesive layer 251, and the flexible substrate 254 are formed using a material that transmits light from the EL layer 235.

  In the display device 250, an insulating layer having a high gas barrier property is used as at least one of the insulating layer 216, the insulating layer 217, the insulating layer 218, the insulating layer 219, the insulating layer 223, the insulating layer 255, and the protective layer 239. Thereby, a highly reliable light-emitting device can be realized.

[Method for forming element layer]
Hereinafter, a method for forming an element layer including a light-emitting element over a flexible insulating surface will be described.

  The element layer includes at least a light-emitting element, and may include an element such as a wiring electrically connected to the light-emitting element or a transistor used for a circuit for controlling light emission of the light-emitting element in addition to the light-emitting element.

  Here, the support having an insulating surface on which the element layer is formed is referred to as a base material. For example, in the above configuration example, the flexible substrate 254 corresponds to the base material.

  As a method of forming an element layer on a base material having a flexible insulating surface, a method of forming an element layer directly on the base material, and an element layer on a supporting base material having rigidity different from that of the base material After forming (at least a part of), there is a method of peeling the element layer and the supporting base material and transferring the element layer to the base material.

  When the material which comprises a base material has heat resistance with respect to the heat concerning the formation process of an element layer, when an element layer is directly formed on a base material, since a process is simplified, it is preferable. At this time, it is preferable to form the element layer in a state in which the base material is fixed to the support base material, because it is easy to transport the device inside and between the devices.

  In the case of using a method in which an element layer is formed on a supporting substrate and then transferred to the substrate, a peeling layer and an insulating layer are first stacked on the supporting substrate, and an element layer is formed on the insulating layer. Then, a support base material and an element layer are peeled and it transfers to a base material. At this time, a material that causes peeling in the interface between the support base and the release layer, the interface between the release layer and the insulating layer, or the release layer may be selected.

  For example, a layer including a high-melting-point metal material such as tungsten and a layer including an oxide of the metal material are stacked as the separation layer, and a layer in which a plurality of layers of silicon nitride or silicon oxynitride are stacked is preferably used. . It is preferable to use a refractory metal material because the degree of freedom in forming the element layer is increased.

  Peeling may be performed by applying a mechanical force, etching the peeling layer, or dropping a liquid on a part of the peeling interface to permeate the entire peeling interface. Alternatively, peeling may be performed by applying heat to the peeling interface using a difference in thermal expansion.

  In the case where peeling is possible at the interface between the support base and the insulating layer, the peeling layer may not be provided. For example, separation may be performed by heating the organic resin using glass as the supporting base and using an organic resin such as polyimide as the insulating layer. Alternatively, a metal layer is provided between the support base and the insulating layer made of an organic resin, and the metal layer is heated by passing an electric current through the metal layer, whereby peeling is performed at the interface between the metal layer and the insulating layer. May be.

  Note that the same method can be applied to a case where a color filter or the like is formed over a flexible substrate, as exemplified in the following embodiment.

  Moreover, when bonding the base material in which the element layer was formed, and the base material in which the color filter was formed, it is preferable to adhere these using a curable material as an adhesive layer. Or what is necessary is just to adhere | attach these with a curable material in the area | region outside the area | region in which an contact bonding layer is provided.

  Also, after pasting together the support base material on which the element layer is formed and the support base material on which the color filter is formed, the element layer or the color filter and the support base material are peeled off, and each is transferred to the base material. May be. By performing the bonding in a state where the element layer and the color filter are formed on the support base material, the alignment accuracy of the bonding can be improved.

[Material and forming method]
Below, the material which can be used for each element mentioned above, and a formation method are demonstrated.

<Flexible substrate>
In this specification, a flexible substrate is referred to as a flexible substrate. As a material for the flexible substrate, an organic resin, a glass material having a thickness enough to be flexible, or the like can be used.

For example, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin, cyclohexane Examples include olefin resins, polystyrene resins, polyamideimide resins, polyvinyl chloride resins, and the like. In particular, a material having a low thermal expansion coefficient is preferably used. For example, a polyamideimide resin, a polyimide resin, PET, or the like having a thermal expansion coefficient of 30 × 10 ⁻⁶ / K or less can be suitably used. In addition, a substrate in which a fibrous body is impregnated with a resin (also referred to as a prepreg) or a substrate in which an inorganic filler is mixed with an organic resin to reduce the thermal expansion coefficient can be used.

  When a fibrous body is included in the material, a high-strength fiber of an organic compound or an inorganic compound is used for the fibrous body. The high-strength fiber specifically refers to a fiber having a high tensile modulus or Young's modulus, and representative examples include polyvinyl alcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramid fiber, Examples include polyparaphenylene benzobisoxazole fibers, glass fibers, and carbon fibers. Examples of the glass fiber include glass fibers using E glass, S glass, D glass, Q glass, and the like. These may be used in the form of a woven fabric or a non-woven fabric, and a structure obtained by impregnating the fibrous body with a resin and curing the resin may be used as the flexible substrate. When a structure made of a fibrous body and a resin is used as the flexible substrate, it is preferable because reliability against breakage due to bending or local pressing is improved.

  For the flexible substrate on the side from which light from the light-emitting element 240 is extracted, a material that transmits light from the EL layer 235 is used. In the material provided on the light emitting side, in order to improve the light extraction efficiency, it is preferable that the refractive index of the material having flexibility and translucency is high. For example, by dispersing an inorganic filler having a high refractive index in an organic resin, a substrate having a higher refractive index than a substrate made of only the organic resin can be realized. In particular, it is preferable to use a small inorganic filler having a particle diameter of 40 nm or less because optical transparency is not lost.

  In addition, since the material provided on the side opposite to the light emission side does not have to be translucent, a metal substrate or the like can be used in addition to the above-described substrate. The thickness of the metal substrate is not particularly limited as a material constituting the metal substrate, preferably 10 μm or more and 200 μm or less, preferably 20 μm or more and 50 μm or less in order to obtain flexibility and bendability. Aluminum, copper, nickel, or an alloy of metals such as an aluminum alloy or stainless steel can be preferably used. It is preferable to use a conductive substrate containing a metal or alloy material for the flexible substrate on the side from which light is not extracted because heat dissipation against heat generated from the light-emitting element 240 is increased.

  The flexible substrate 254 is preferably a substrate that has been subjected to an insulating treatment by oxidizing the surface of a conductive substrate or forming an insulating film on the surface. For example, an insulating film is formed on the surface of a conductive substrate by using an electrodeposition method, a coating method such as a spin coating method or a dipping method, a printing method such as a screen printing method, or a deposition method such as a vapor deposition method or a sputtering method. Alternatively, the surface of the flexible substrate 254 may be oxidized by a method of leaving or heating in an oxygen atmosphere or a method such as an anodic oxidation method.

  In the case where the surface of the flexible substrate has an uneven shape, a planarization layer may be provided to form an insulating surface that is flattened by covering the uneven shape. As the planarization layer, an insulating material can be used, and it can be formed of an organic material or an inorganic material. For example, the planarization layer may be formed using a deposition method such as a sputtering method, a coating method such as a spin coating method or a dip method, a discharge method such as an ink jet method or a dispensing method, a printing method such as a screen printing method, or the like. it can.

  Alternatively, a material obtained by stacking a plurality of layers can be used as the flexible substrate. For example, a material in which two or more types of layers made of an organic resin are laminated, a material in which a layer made of an organic resin and a layer made of an inorganic material are laminated, a material in which two or more layers made of an inorganic material are laminated, and the like are used. By providing the layer made of an inorganic material, intrusion of moisture or the like into the inside is suppressed, so that the reliability of the light-emitting device can be improved.

  As the inorganic material, a metal or semiconductor oxide material, nitride material, oxynitride material, or the like can be used. For example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, or the like may be used.

  For example, when laminating a layer made of an organic resin and a layer made of an inorganic material, the layer made of the inorganic material is formed on the upper layer or the lower layer of the layer made of an organic resin by a sputtering method, a CVD method, a coating method, or the like. Can do.

  Further, a glass substrate that is thin enough to have flexibility may be used as the flexible substrate. In particular, it is preferable to use a sheet in which an organic resin layer, an adhesive layer, and a glass layer are stacked from the side close to the light emitting element 240. The thickness of the glass layer is 20 μm or more and 200 μm or less, preferably 25 μm or more and 100 μm or less. The glass layer having such a thickness can simultaneously realize a high barrier property and flexibility against water and oxygen. The thickness of the organic resin layer is 10 μm or more and 200 μm or less, preferably 20 μm or more and 50 μm or less. By providing such an organic resin layer in contact with the glass layer, it is possible to suppress breakage and cracking of the glass layer and improve mechanical strength. By applying such a composite material of a glass material and an organic resin to a flexible substrate, a highly reliable and flexible light-emitting device can be obtained.

<Light emitting element>
In the light-emitting element 240, a material that transmits light emitted from the EL layer 235 is used for an electrode provided on the light emission side.

  As the light-transmitting material, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like can be used. Alternatively, graphene may be used. As the conductive layer, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy containing any of these materials can be used. Alternatively, nitrides of these metal materials (for example, titanium nitride) may be used. Note that in the case where a metal material (or a nitride thereof) is used, it may be thinned so as to have translucency. In addition, a stacked film of the above materials can be used as a conductive layer. For example, it is preferable to use a laminated film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be increased.

  Such an electrode is formed by vapor deposition or sputtering. In addition, it can be formed using a discharge method such as an inkjet method, a printing method such as a screen printing method, or a plating method.

  Note that in the case where the above-described conductive oxide having a light-transmitting property is formed by a sputtering method, the light-transmitting property can be improved by forming the conductive oxide in an atmosphere containing argon and oxygen.

  In the case where the conductive oxide film is formed over the EL layer, the first conductive oxide film formed in an atmosphere containing argon with a reduced oxygen concentration and the atmosphere containing argon and oxygen are formed. A stacked film of the second conductive oxide film is preferable because film formation damage to the EL layer can be reduced. Here, it is particularly preferable that the purity of the argon gas used when forming the first conductive oxide film is high. For example, an argon gas having a dew point of −70 ° C. or lower, preferably −100 ° C. or lower is preferably used. .

  For the electrode provided on the side opposite to the light emitting side, a material having reflectivity with respect to light emission from the EL layer 235 is preferably used.

  As the material having light reflectivity, for example, a metal such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy containing these metals can be used. Further, lanthanum, neodymium, germanium, or the like may be added to a metal or alloy containing these metal materials. In addition, alloys containing aluminum such as aluminum and titanium alloys, aluminum and nickel alloys, aluminum and neodymium alloys (aluminum alloys), silver and copper alloys, silver and palladium and copper alloys, and silver and magnesium alloys An alloy containing silver such as can also be used. An alloy containing silver and copper is preferable because of its high heat resistance. Furthermore, by stacking a metal film or a metal oxide film in contact with the aluminum alloy film, oxidation of the aluminum alloy film can be suppressed. Examples of the material for the metal film and metal oxide film include titanium and titanium oxide. Alternatively, a film formed using the light-transmitting material and a film formed using a metal material may be stacked. For example, a laminated film of silver and indium tin oxide, a laminated film of an alloy of silver and magnesium and indium tin oxide, or the like can be used.

  Such an electrode is formed by vapor deposition or sputtering. In addition, it can be formed using a discharge method such as an inkjet method, a printing method such as a screen printing method, or a plating method.

  The EL layer 235 may include at least a layer containing a light-emitting organic compound (hereinafter also referred to as a light-emitting layer), and may be a single layer or a plurality of layers. As an example of a configuration composed of a plurality of layers, a configuration in which a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer are stacked from the anode side can be given as an example. Note that these layers other than the light-emitting layer are not necessarily provided in the EL layer 235. Further, these layers can be provided in an overlapping manner. Specifically, a plurality of light emitting layers may be provided to overlap with the EL layer 235, or a hole injection layer may be provided to overlap with the electron injection layer. In addition to the charge generation layer, other configurations such as an electronic relay layer can be added as appropriate as an intermediate layer. For example, it is good also as a structure which laminates | stacks the light emitting layer which exhibits a different luminescent color. For example, white light emission can be obtained by laminating two or more light emitting layers having a complementary color relationship.

  The EL layer 235 can be formed by a vacuum evaporation method, a discharge method such as an inkjet method or a dispense method, or a coating method such as a spin coat method.

<Adhesive layer>
As the adhesive layer, for example, a curable material such as a resin that cures at room temperature such as a two-component mixed resin, a thermosetting resin, a photocurable resin, or a gel can be used. For example, epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide, polyvinyl chloride (PVC), polyvinyl butyral (PVB), ethylene vinyl acetate (EVA), or the like can be used. In particular, a material with low moisture permeability such as an epoxy resin is preferable.

  The adhesive layer may contain a desiccant. For example, a substance that absorbs moisture by chemical adsorption, such as an alkaline earth metal oxide (such as calcium oxide or barium oxide), can be used. As another desiccant, a substance that adsorbs moisture by physical adsorption, such as zeolite or silica gel, may be used. In addition, by providing a granular desiccant, light emitted from the light emitting element 240 is diffusely reflected by the desiccant, so that the light emitting device has high reliability and improved viewing angle dependency (especially useful for lighting applications). Can be realized.

<Transistor>
There is no particular limitation on the structure of the transistors included in the display portion 201, the scan line driver circuit 202, and the signal line driver circuit 203. For example, a staggered transistor or an inverted staggered transistor may be used. Further, any transistor structure of a top gate type transistor or a bottom gate type transistor may be employed. As a semiconductor material used for the transistor, a semiconductor material such as silicon or germanium may be used, or an oxide semiconductor containing at least one of indium, gallium, and zinc may be used. As an oxide semiconductor, an oxide semiconductor containing at least one of indium, gallium, and zinc typically includes an In—Ga—Zn-based metal oxide. The use of an oxide semiconductor with a wider band gap and lower carrier density than silicon is preferable because a transistor with low off-state current can be realized and leakage current when a light-emitting element to be formed later can be suppressed. There is no particular limitation on the crystallinity of a semiconductor used for the transistor, and either an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor partially including a crystal region) is used. May be. The use of a semiconductor having crystallinity is preferable because deterioration of transistor characteristics is suppressed.

<Color filter and black matrix>
The color filter 221 is provided for the purpose of adjusting the emission color from the light emitting element 240 and increasing the color purity. For example, when a full-color display device is formed using a light-emitting element that emits white light, a plurality of pixels provided with different color filters are used. In that case, three color filters of red (R), green (G), and blue (G) may be used, or four colors including yellow (Y) may be used. Further, in addition to R, G, B, (and Y), white (W) pixels may be used to obtain four colors (or five colors).

  A black matrix 222 is provided between the adjacent color filters 221. The black matrix 222 blocks light coming from the light emitting elements 240 of adjacent pixels and suppresses color mixing between adjacent pixels. Here, by providing the end portion of the color filter 221 so as to overlap the black matrix 222, light leakage can be suppressed. The black matrix 222 can be formed using a material that blocks light emitted from the light-emitting element 240 and can be formed using a metal, an organic resin containing a pigment, or the like. Note that the black matrix 222 may be provided in a region other than the display portion 201 such as the scanning line driver circuit 202.

  Further, an overcoat covering the color filter 221 and the black matrix 222 may be provided. The overcoat protects the color filter 221 and the black matrix 222 and suppresses diffusion of impurities contained therein. The overcoat is made of a material that transmits light emitted from the light emitting element 240, and an inorganic insulating film or an organic insulating film can be used.

  The display device exemplified in this embodiment is a display device having both high flexibility and high reliability.

  This embodiment can be implemented in appropriate combination with any of the other embodiments described in this specification.

(Embodiment 2)
The film evaluation method of one embodiment of the present invention is described below. Here, a method for evaluating gas barrier properties (gas permeability) of a film to be evaluated and a method for producing an evaluation sample that can be used for the evaluation will be described with reference to the drawings.

[Production method of evaluation sample]
Below, the example of the production method of the evaluation sample which can be used for evaluation of the gas barrier property (gas permeability) of a to-be-evaluated film | membrane is demonstrated.

  First, the island-shaped peeling layer 102 is formed over the substrate 101 (FIG. 3A). At this time, the release layer 102 is preferably provided on the inner side than the end portion of the formation surface of the substrate 101. The release layer 102 may be formed using a photolithography method or the like after forming a film to be the release layer 102, or the island-like release layer 102 may be formed using a printing method such as a screen printing method. You may form directly.

  As the substrate 101, a substrate having a relatively flat surface is used. As the substrate 101, in addition to a glass substrate or a resin substrate, a substrate such as a semiconductor substrate, a metal substrate, or a ceramic substrate can be used.

  Subsequently, an evaluation target film 104 that covers the peeling layer 102 is formed (FIG. 3B).

  The target film 104 is a film whose gas barrier property (gas permeability) should be evaluated later. Examples of the material that can be used for the film to be evaluated 104 include metals, alloys, semiconductors, oxide films and nitride films thereof, other inorganic materials, and organic materials such as resins. Further, the evaluation target film 104 may be a stacked film of films containing the above materials.

  Here, in order to perform peeling between the peeling layer 102 and the film to be evaluated 104 in a later step, the peeling layer 102 uses a material that can be peeled between them depending on the material of the film to be evaluated 104.

  For example, a metal such as tungsten is used for the peeling layer 102, and an oxide such as silicon oxide is used for the evaluated film 104. At this time, the surface of the metal is oxidized by contact with the oxide, and an oxide of the metal (for example, tungsten oxide) is formed. Note that heat treatment may be performed after the film to be evaluated 104 is formed to promote the oxidation reaction. Alternatively, the surface of the peeling layer 102 may be oxidized by performing plasma treatment, exposing to an oxidizing liquid or gas, or the like before forming the target film 104. Here, when an external force for physically peeling the peeling layer 102 is applied, peeling occurs between the peeling layer 102 and the target film 104.

  In addition, by using a metal as the peeling layer 102 and a resin such as polyimide as the film to be evaluated 104, the peelable layer 102 may be peelable by controlling the adhesion between them. Alternatively, a structure may be used in which the peeling layer 102 and the evaluation target film 104 having surfaces with extremely high flatness are used, and these flat surfaces are bonded to each other so as to adhere to each other.

  Note that the evaluation target film 104 may be formed in contact with the surface of the substrate 101 as the peeling layer 102. For example, a metal substrate can be used as the substrate 101, and a resin can be used as the film to be evaluated 104.

  The material used for the peeling layer 102 and the material used for the film to be evaluated 104 may be selected from various materials other than the above as long as the material can be peeled between them, such as low adhesion. be able to. For example, a combination of a metal material or an alloy material and an organic material, a combination of a metal material or an alloy material and an inorganic insulating material, a combination of an inorganic insulating material and an organic material, a combination of a semiconductor material and an organic material, or the like can be used. Note that one of these combinations may be applied to the separation layer 102 and the other to the film to be evaluated 104. Alternatively, the release layer 102 and the target film 104 may be made of materials having different stresses and peeled using the difference in stress.

  In this way, by forming the film to be evaluated 104 so as to extend outward from the island-shaped peeling layer 102, the film to be evaluated 104 peels off from the peeling layer 102 unintentionally in a subsequent process. It is preferable because it can be prevented.

  Subsequently, the detection layer 105 is formed on the target film 104 in a region overlapping with the peeling layer 102. The detection layer 105 can be formed by a sputtering method or a vapor deposition method using a shadow mask such as a metal mask.

  The detection layer 105 is made of a material that reacts with the gas that has passed through the target film 104 and whose optical characteristics (reflectance, transmittance, refractive index, etc.) change. Therefore, the material used for the detection layer 105 may be appropriately selected according to the gas to be evaluated.

  Typically, by using a calcium film for the detection layer 105, the barrier property against water vapor can be evaluated. The calcium membrane reacts with water to produce calcium hydroxide. Since calcium hydroxide has higher translucency than calcium, the progress of the reaction can be confirmed by optical observation. Examples of such materials include group 2 elements such as magnesium and barium in addition to calcium.

  The thickness of the detection layer 105 can be 10 nm or more and less than 500 nm, preferably 20 nm or more and less than 200 nm. When the detection layer 105 is thinner than 10 nm, it is difficult to detect a change in optical characteristics and it is difficult to form the detection layer 105 with a uniform thickness. On the other hand, if it is thicker than 500 nm, the region formed by the reaction between the detection layer 105 and the gas may be non-uniform in the depth direction, and the measurement error increases in the optical evaluation. End up.

  Subsequently, a barrier layer 106 is formed so as to cover the detection layer 105 (FIG. 3C). As the barrier layer 106, a film made of a material having a high barrier property (low gas permeability) against the gas detected by the detection layer 105 can be used. For example, a material with low moisture permeability is used. For example, a metal, an alloy, an inorganic insulating film, or the like can be used. Since the barrier layer 106 is provided in contact with the detection layer 105, it is preferable to use a material that is chemically stable with respect to contact with the material used for the detection layer 105. Further, the barrier layer 106 needs to prevent impurities contained in the adhesive layer 107 to be formed later from diffusing into the detection layer 105. Therefore, the barrier layer 106 is preferably formed to be sufficiently thick in order to prevent these impurities from penetrating or entering through a pinhole or the like, and has a thickness of 50 nm to 20 μm, preferably 500 nm to less than 10 μm. . At this time, it is preferable to use a formation method in which no pinhole is formed in the barrier layer 106.

  The barrier layer 106 can be formed by a sputtering method or a vapor deposition method using a shadow mask such as a metal mask. Alternatively, after forming by a CVD method or the like, unnecessary portions may be etched by a photolithography method and processed into an island shape.

  After that, the substrate 101 and the substrate 108 are bonded to each other with the adhesive layer 107 (FIG. 3D). At this time, the substrate 108 is disposed so that the structure provided on the substrate 101 is sandwiched between the substrate 101 and the substrate 108.

  As the substrate 108, a material having a high barrier property (low gas permeability) with respect to a gas detected by the detection layer 105 can be used. For example, a material with low moisture permeability is used. For example, a semiconductor substrate, a glass substrate, a metal substrate, a ceramic substrate, or the like can be used.

  The adhesive layer 107 can be formed using a curable resin or the like. For example, a resin that cures at room temperature, such as a two-component mixed resin, a thermosetting resin, a photocurable resin, or the like can be used. The adhesive layer is preferably made of a material having a high barrier property (low gas permeability) against the gas detected by the detection layer 105. For example, a material with low moisture permeability is used.

  Note that in the case where a material with low translucency or a material that does not transmit light is used as the film to be evaluated, the detection layer 105 needs to be optically observed through the substrate 108, the adhesive layer 107, and the barrier layer 106. Therefore, a translucent material is used as these.

  Next, the outer peripheral portions of the substrate 101 and the substrate 108 are cut (FIG. 4A). At this time, the substrate 101 and the substrate 108 are cut so that a part of the island-shaped release layer 102 is cut. Thus, the subsequent peeling step can be performed more easily by cutting the substrate 101 and the substrate 108 so that the end face of the peeling layer 102 is exposed.

  Subsequently, the separation layer 102 and the target film 104 are separated, and the substrate 101 over which the separation layer 102 is formed is removed (FIG. 4B).

  As a peeling method, for example, the substrate 101 or the substrate 108 is fixed to the suction stage, and a starting point of peeling is formed at the boundary between the peeling layer 102 and the evaluation target film 104. For example, the peeling starting point may be formed by inserting a sharply shaped tool such as a blade into these boundaries. Further, a liquid having a low surface tension (for example, alcohol, water, water containing carbon dioxide, or the like) is dropped on the end portion, and the liquid is allowed to permeate the boundary between the peeling layer 102 and the target film 104 using a capillary phenomenon. Thus, a starting point of peeling may be formed.

  Next, the detection layer 105 and the barrier layer 106 can be peeled without being damaged by gently applying a physical force in a direction substantially perpendicular to the adhesion surface from the peeling starting point. At this time, peeling may be performed by attaching a tape or the like to the substrate 101 or the substrate 108 and pulling the tape in the above direction, or by peeling a hook-shaped member to the end of the substrate 101 or the substrate 108. You may go. Further, peeling may be performed by adsorbing a member capable of vacuum suction to the back surface of the substrate 101 or the substrate 108 and pulling the member.

  Through the above steps, the evaluation sample 100 can be manufactured.

  Note that it is preferable to perform the peeling immediately before the evaluation because the evaluation sample 100 may be affected by the atmosphere around the evaluation sample 100 immediately after the evaluation sample 100 is manufactured, more specifically, immediately after the peeling. Or after peeling, it is preferable to store in the environment where the density | concentration of the gas used as evaluation object and the gas which a detection layer can react is fully reduced.

  According to the method for preparing the evaluation sample exemplified above, the film to be evaluated can be formed by various forming methods, so that the type of film to be evaluated and the degree of freedom of the forming method can be increased.

  Here, for example, in the case where an evaluation sample is prepared by sequentially laminating a film to be evaluated, a detection layer, and a barrier layer directly on a plastic substrate having high gas permeability (for example, moisture permeability), the type of film to be evaluated The forming method is limited by the heat resistance of the plastic substrate used and the resistance to reactive gases and liquids. For example, such a method cannot evaluate a dense film having a high gas barrier property that can be formed using a plasma CVD method with an increased film formation temperature.

  On the other hand, by using the method for manufacturing an evaluation sample of one embodiment of the present invention, a film formed at such a high temperature or a film formed using a highly reactive gas can be evaluated. For example, in the case where a glass substrate is used as the substrate 101, a film formed at a temperature of 200 ° C. or higher and lower than the softening point of the substrate, preferably 300 ° C. or higher and 700 ° C. or lower, or heat treatment at the temperature during the manufacturing process. Evaluation is possible even for a film that has undergone the above. In the case where a single crystal silicon substrate is used as the substrate 101, a film formed at a temperature exceeding 1000 ° C. or subjected to heat treatment at such a temperature can be evaluated.

  Further, according to the evaluation sample manufacturing method of one embodiment of the present invention, an evaluation sample in a form in which the film to be evaluated is exposed on the outermost surface can be manufactured. Therefore, it is possible to more accurately evaluate the inherent gas barrier properties of the film to be evaluated.

[Method for evaluating moisture permeability of film to be evaluated]
Hereinafter, a method for evaluating the gas barrier property of the film 104 to be evaluated using the evaluation sample 100 manufactured by the above-described method will be described.

  FIG. 4C is a schematic diagram of the evaluation system.

  The evaluation sample 100 is supported on the stage 111 so that the evaluation target film 104 side is an upper surface. The evaluation can be performed by optically observing the detection layer 105 through the film to be evaluated 104 and optically observing the area of the region where the detection layer 105 has changed due to reaction with gas. Here, in the case where a material with poor translucency or a material that does not transmit light is used as the film 104 to be evaluated, the evaluation sample 100 is placed on the stage 111 so that the substrate 108 side is the upper surface, The detection layer 105 is optically observed through the adhesive layer 107 and the barrier layer 106.

  In the evaluation system illustrated in FIG. 4C, the gas barrier property of the film 104 to be evaluated is evaluated by performing image analysis on the image of the detection layer 105 captured by the camera 112 using the arithmetic device 113.

  More specifically, the detection layer 105 is observed with respect to the evaluation sample 100 after being held for a certain time in the test environment, and the area of the observation region and the region in which the detection layer 105 in the observation region has been altered by reacting with gas are changed. By measuring the area, it is possible to calculate the weight of the gas that has permeated the film to be evaluated 104 during the period maintained in the test environment.

  Hereinafter, a method of using a calcium film as the detection layer 105 and evaluating the water vapor transmission amount of the evaluation target film 104 will be described.

  First, the evaluation sample 100 is held for a certain period in the test environment. The test environment may be set as appropriate, and may be selected as appropriate from, for example, an air atmosphere, a high or low temperature atmosphere, a high or low humidity atmosphere, and the like. Thereafter, the calcium film that is the detection layer 105 is imaged by the camera 112, and the captured image is analyzed by the arithmetic device 113, thereby calculating the two areas described above.

  Here, 1 mol of calcium reacts with 2 mol of water to produce 1 mol of calcium hydroxide and 1 mol of hydrogen. The reaction formula at this time is as shown in Formula (1).

Here, the area of the observation area of the calcium film is A ₀ [m ² ], the area of the area where the alteration of calcium is confirmed in the observation area (calcium hydroxide) is A [m ² ], and the thickness of the calcium film is t [m], calcium hydroxide density d [g / m ² ], water molecular weight M _H2O , calcium hydroxide molecular weight M _{Ca (OH) 2} , test environment retention time T [day] In this case, the water vapor transmission amount WVTR [g / m ² · day] can be calculated as in Expression (2).

  By such a method, it is possible to evaluate the water vapor transmission amount which is an index of moisture permeability of the film to be evaluated.

  In the above, the calculation formula of the water vapor permeation amount based on the reaction formula of calcium and water is exemplified, but the practitioner appropriately changes the calculation formula depending on the material used for the detection layer 105 and the type of target gas. Can be used.

  According to the evaluation sample manufacturing method and the film evaluation method exemplified in this embodiment, the gas barrier properties (gas permeability) of the films formed by various methods can be more accurately evaluated.

For example, when the water vapor transmission amount calculated by the above-described evaluation method is maintained in a high-temperature and high-humidity environment (for example, temperature 65 ° C., humidity 95%, 1 atm), 1 × 10 ⁻⁴ [g / m ² · day] Or less, preferably 1 × 10 ⁻⁵ [g / m ² · day] or less, more preferably 1 × 10 ⁻⁶ [g / m ² · day] or less, more preferably 1 × 10 ⁻⁷ [g / m ² · Day] or less, more preferably 1 × 10 ⁻⁸ [g / m ² · day] or less is preferably used as a protective layer of a transistor or a light-emitting element.

  This embodiment can be implemented in appropriate combination with any of the other embodiments described in this specification.

(Embodiment 3)
In this embodiment, a semiconductor device of one embodiment of the present invention will be described with reference to FIGS.

In one embodiment of the present invention, an insulating layer with high gas barrier properties (low gas permeability) is used as at least one of the insulating layers included in the semiconductor device. An insulating layer having a high gas barrier property can be applied to, for example, a base film, a gate insulating layer of a transistor, a protective layer, or the like. For example, the water vapor permeation amount of the insulating layer having a high gas barrier property is 1 × 10 ⁻⁴ [g / m ² · day] in a high temperature and high humidity environment (for example, temperature 65 ° C., humidity 95%, 1 atm). Or less, preferably 1 × 10 ⁻⁵ [g / m ² · day] or less, more preferably 1 × 10 ⁻⁶ [g / m ² · day] or less, more preferably 1 × 10 ⁻⁷ [g / m ² · Day] or less, more preferably 1 × 10 ⁻⁸ [g / m ² · day] or less. With such an insulating layer, a highly reliable semiconductor device can be realized.

  In the semiconductor device of one embodiment of the present invention, a material whose gas barrier property (gas permeability) is evaluated using the film evaluation method of one embodiment of the present invention described in detail in Embodiment 2 is used as a component. It has an insulating layer. With the use of a material that is evaluated to have sufficiently high gas barrier properties (gas permeability is sufficiently low), in one embodiment of the present invention, a highly reliable semiconductor device can be realized.

[Configuration example of semiconductor device]
FIG. 5 is a schematic cross-sectional view of a transistor provided over a substrate 330 having an insulating surface.

  FIG. 5A is a schematic cross-sectional view of a bottom-gate transistor 300. FIG.

  The transistor 300 includes a gate electrode 301, a gate insulating layer 302 that covers the gate electrode 301, a semiconductor layer 303 that overlaps with the gate electrode 301 through the gate insulating layer 302, and a source electrode that is electrically connected to the semiconductor layer 303. 304a and a drain electrode 304b. In addition, a protective layer 305 is provided to cover the transistor 300.

  In the transistor 300, an insulating layer having a high gas barrier property is used for at least one of the gate insulating layer 302 and the protective layer 305. Thereby, a highly reliable semiconductor device can be realized. The gate insulating layer 302 and the protective layer 305 can be formed using a material that can be used for the insulating layer described in Embodiment 1.

  Here, in the transistor 300, the source electrode 304 a and the drain electrode 304 b are formed so as to cover part of the upper surface and part of the side surface of the semiconductor layer 303. Here, as illustrated in FIG. 5A, when processing the source electrode 304 a and the drain electrode 304 b by etching, part of the upper surface of the semiconductor layer 303 may be etched and thinned.

  Note that the region of the semiconductor layer 303 that is in contact with the source electrode 304a and the drain electrode 304b may have a low resistance by doping impurities or the like. In the case where silicon is used as the semiconductor, silicide with a metal may be formed. By reducing the resistance of the region in contact with the source electrode 304a and the drain electrode 304b of the semiconductor layer 303, the contact resistance between the electrode and the semiconductor layer 303 can be reduced. Since resistance between the source electrode 304a and the drain electrode 304b can be reduced, transistor characteristics such as on-state current can be improved, which is preferable.

  The transistor 300 having such a structure can reduce a photomask required for formation, so that a manufacturing process can be simplified.

  A transistor 310 illustrated in FIG. 5B is different from the transistor 300 illustrated in FIG. 5A in that an insulating layer 306 is provided over the semiconductor layer 303.

  The insulating layer 306 is provided to protect the semiconductor layer 303 when the source electrode 304a and the drain electrode 304b are processed by etching. In addition, since the insulating layer 306 is provided, at least the upper surface of the region where the channel is formed in the semiconductor layer 303 is not exposed after the insulating layer 306 is formed. , Organic contamination) can be eliminated, and a highly reliable transistor can be obtained.

  In the transistor 310, an insulating layer with high gas barrier properties is used for at least one of the gate insulating layer 302, the protective layer 305, and the insulating layer 306. Thereby, a highly reliable semiconductor device can be realized. The insulating layer 306 can be formed using a material that can be used for the insulating layer described in Embodiment 1.

  In the transistor 320 illustrated in FIG. 5C, an insulating layer 306 is formed over the semiconductor layer 303 other than an opening for connecting the source electrode 304a and the drain electrode 304b to the semiconductor layer 303. This is different from the transistor 310 shown in FIG.

  The source electrode 304 a and the drain electrode 304 b are electrically connected to the semiconductor layer 303 through openings provided in the insulating layer 306.

  Here, as shown in FIG. 5C, the insulating layer 306 is formed so as to cover the end portion of the semiconductor layer 303, so that a region other than the opening is not exposed, and contamination in the subsequent steps is performed. Thus, a highly reliable transistor can be obtained.

  In the transistor 320, an insulating layer having a high gas barrier property is used for at least one of the gate insulating layer 302, the protective layer 305, and the insulating layer 306. Thereby, a highly reliable semiconductor device can be realized.

[electrode]
As a conductive material for forming an electrode (a gate electrode, a source electrode, and a drain electrode) included in a semiconductor device, aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium Further, a metal element selected from vanadium, niobium, manganese, magnesium, zirconium, beryllium and the like, an alloy containing the above metal element as a component, or an alloy combining the above metal elements can be used. Alternatively, a semiconductor typified by polycrystalline silicon containing an impurity element such as phosphorus, or silicide such as nickel silicide may be used. The formation method of the conductive layer is not particularly limited, and various formation methods such as an evaporation method, a CVD method, a sputtering method, and a spin coating method can be used.

  The electrodes of the semiconductor device include indium tin oxide (ITO), indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, and indium tin oxide including titanium oxide. Alternatively, a conductive material containing oxygen such as indium zinc oxide or indium tin oxide to which silicon oxide is added can be used. Alternatively, a stacked structure of the conductive material containing oxygen and the material containing the metal element can be employed.

  In addition, as an electrode of a semiconductor device, for example, a single layer structure of an aluminum layer containing silicon, a two layer structure in which a titanium layer is stacked on an aluminum layer, a two layer structure in which a titanium layer is stacked on a titanium nitride layer, or nitriding A two-layer structure in which a tungsten layer is stacked on a titanium layer, a two-layer structure in which a tungsten layer is stacked on a tantalum nitride layer, a titanium layer, an aluminum layer is stacked on the titanium layer, and a titanium layer is further formed thereon A three-layer structure. Alternatively, aluminum may be a layer of an element selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium, or an alloy layer or nitride layer that is a combination of a plurality of elements.

[Semiconductor layer]
In the semiconductor device of one embodiment of the present invention, an oxide semiconductor is preferably used for the semiconductor layer 303. An oxide semiconductor has an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more, so that off-state current of the transistor can be reduced. In this embodiment, the case where an oxide semiconductor layer is used as the semiconductor layer 303 is described.

  The oxide semiconductor layer contains one or both of In and Ga. Typically, an In—Ga oxide (an oxide containing In and Ga), an In—Zn oxide (an oxide containing In and Zn), an In—M—Zn oxide (In, the element M, An oxide containing Zn. The element M is one or more elements selected from Al, Ti, Ga, Y, Zr, La, Ce, Nd, and Hf. Moreover, Sn, Sc, Gd, etc. may be included.

  The contents of indium, gallium, and the like in the oxide semiconductor layer can be compared by time-of-flight secondary ion mass spectrometry (ToF-SIMS) or X-ray electron spectroscopy (XPS).

In order to impart stable electrical characteristics to a transistor including an oxide semiconductor layer, a semiconductor layer in which the oxygen vacancy and impurity concentration in the oxide semiconductor layer are reduced and the oxide semiconductor layer can be regarded as intrinsic or substantially intrinsic It is preferable that In addition, it is preferable that the channel formation region in the oxide semiconductor layer be regarded as intrinsic or substantially intrinsic. Specifically, the carrier density of the oxide semiconductor layer is less than 1 × 10 ¹⁷ / cm ^3, less than 1 × 10 ¹⁵ / cm ³ , or less than 1 × 10 ¹³ / cm ³ .

In the oxide semiconductor layer, hydrogen, nitrogen, carbon, silicon, and metal elements other than main components are impurities. In particular, when the oxide semiconductor layer contains silicon at a high concentration, impurity levels due to silicon are formed in the oxide semiconductor layer. The impurity level becomes a trap and may deteriorate the electrical characteristics of the transistor. In order to reduce deterioration in electric characteristics of the transistor, the silicon concentration of the oxide semiconductor layer is less than 1 × 10 ¹⁹ atoms / cm ³ , preferably less than 5 × 10 ¹⁸ atoms / cm ³ , more preferably 1 × 10 ^18. It may be less than atoms / cm ³ .

In addition, hydrogen and nitrogen in the oxide semiconductor layer form donor levels and increase the carrier density. In order to make the oxide semiconductor layer intrinsic or substantially intrinsic, the hydrogen concentration in the oxide semiconductor layer is set to 2 × 10 ²⁰ atoms / cm ^{3 in a} secondary ion analysis method (SIMS: Secondary Ion Mass Spectrometry). Hereinafter, it is preferably 5 × 10 ¹⁹ atoms / cm ³ or less, more preferably 1 × 10 ¹⁹ atoms / cm ³ or less, and further preferably 5 × 10 ¹⁸ atoms / cm ³ or less. Further, the nitrogen concentration in SIMS is less than 5 × 10 ¹⁹ atoms / cm ³ , preferably 5 × 10 ¹⁸ atoms / cm ³ or less, more preferably 1 × 10 ¹⁸ atoms / cm ³ or less, and even more preferably 5 × 10. ¹⁷ atoms / cm ³ or less.

Note that when the oxide semiconductor layer contains silicon and carbon at high concentrations, the crystallinity of the oxide semiconductor layer may be reduced. In order not to lower the crystallinity of the oxide semiconductor layer, the silicon concentration of the oxide semiconductor layer may be set to the above value (a value similar to a value suitable for reducing deterioration in electric characteristics of the transistor). In order not to decrease the crystallinity of the oxide semiconductor layer, the carbon concentration of the oxide semiconductor layer is less than 1 × 10 ¹⁹ atoms / cm ³ , preferably less than 5 × 10 ¹⁸ atoms / cm ³ , more preferably 1 What is necessary is just to set it as less than * 10 < ¹⁸ > atoms / cm < ³ >.

  Here, crystallinity of the oxide semiconductor layer is described.

  The oxide semiconductor layer may include a non-single crystal, for example. The non-single crystal includes, for example, CAAC (C Axis Aligned Crystal), polycrystal, microcrystal, and amorphous part. The amorphous part has a higher density of defect states than microcrystals and CAAC. In addition, microcrystals have a higher density of defect states than CAAC. Note that an oxide semiconductor including CAAC is referred to as a CAAC-OS (C Axis Crystallized Oxide Semiconductor).

  The oxide semiconductor layer may include, for example, CAAC. For example, the CAAC is c-axis oriented, and the a-axis and / or the b-axis are not aligned with the macro.

  The oxide semiconductor layer may include microcrystal, for example. The oxide layer (also referred to as a microcrystalline oxide) layer having microcrystals includes, for example, an oxide including microcrystals (also referred to as nanocrystals) having a size of 1 nm to less than 10 nm in the film. Alternatively, the microcrystalline oxide layer includes, for example, an oxide having a crystal-amorphous mixed phase structure having a crystal part of 1 nm to less than 10 nm.

  The oxide semiconductor layer may have an amorphous part, for example. An oxide layer (also referred to as an amorphous oxide) layer having an amorphous part has, for example, disordered atomic arrangement and no crystal component. Alternatively, the amorphous oxide layer is, for example, completely amorphous and has no crystal part.

  Note that the oxide semiconductor layer may be a mixed film of CAAC, microcrystalline oxide, and amorphous oxide. The mixed film includes, for example, an amorphous oxide region, a microcrystalline oxide region, and a CAAC region. The mixed film may have a stacked structure of an amorphous oxide region, a microcrystalline oxide region, and a CAAC region, for example.

  Note that the oxide semiconductor layer may include a single crystal, for example.

  The oxide semiconductor layer preferably includes a plurality of crystal parts, and the c-axis of the crystal parts is aligned in a direction parallel to the normal vector of the surface to be formed or the normal vector of the surface. Note that the directions of the a-axis and the b-axis may be different between different crystal parts. An example of such an oxide layer (or oxide semiconductor layer) is a CAAC-OS film.

  The CAAC-OS film is not completely amorphous. The CAAC-OS film includes, for example, an oxide semiconductor with a crystal-amorphous mixed phase structure including a crystal part and an amorphous part. Note that the crystal part is often large enough to fit in a cube whose one side is less than 100 nm. Further, in the observation image obtained by a transmission electron microscope (TEM), the boundary between the amorphous part and the crystal part included in the CAAC-OS film and the boundary between the crystal part and the crystal part are not clear. In addition, a clear grain boundary (also referred to as a grain boundary) cannot be confirmed in the CAAC-OS film by TEM. Therefore, in the CAAC-OS film, reduction in electron mobility due to grain boundaries is suppressed.

  The crystal part included in the CAAC-OS film is aligned so that, for example, the c-axis is in a direction parallel to the normal vector of the formation surface of the CAAC-OS film or the normal vector of the surface, and is perpendicular to the ab plane. When viewed from the direction, the metal atoms are arranged in a triangular shape or a hexagonal shape, and when viewed from the direction perpendicular to the c-axis, the metal atoms are arranged in layers, or the metal atoms and oxygen atoms are arranged in layers. Note that the directions of the a-axis and the b-axis may be different between different crystal parts. In this specification, the term “perpendicular” includes a range of 80 ° to 100 °, preferably 85 ° to 95 °. In addition, a simple term “parallel” includes a range of −10 ° to 10 °, preferably −5 ° to 5 °.

  Note that the distribution of crystal parts in the CAAC-OS film is not necessarily uniform. For example, in the formation process of the CAAC-OS film, when crystal growth is performed from the surface side of the oxide semiconductor film, the ratio of crystal parts in the vicinity of the surface of the oxide semiconductor film is higher in the vicinity of the surface. In addition, when an impurity is added to the CAAC-OS film, the crystal part in a region to which the impurity is added becomes amorphous in some cases.

  Since the c-axis of the crystal part included in the CAAC-OS film is aligned in a direction parallel to the normal vector of the formation surface of the CAAC-OS film or the normal vector of the surface, the shape of the CAAC-OS film ( Depending on the cross-sectional shape of the surface to be formed or the cross-sectional shape of the surface, the directions may be different from each other. The crystal part is formed when a film is formed or when a crystallization process such as a heat treatment is performed after the film formation. Therefore, the c-axes of the crystal parts are aligned in a direction parallel to the normal vector of the surface where the CAAC-OS film is formed or the normal vector of the surface.

  In a transistor using a CAAC-OS film, change in electrical characteristics due to irradiation with visible light or ultraviolet light is small. Therefore, the transistor has high reliability.

  In order to use the oxide semiconductor layer as a CAAC-OS film, the surface over which the oxide semiconductor layer is formed is preferably amorphous. When the surface over which the oxide semiconductor layer is formed is crystalline, the crystallinity of the oxide semiconductor layer is easily disturbed, and the CAAC-OS film is hardly formed.

  Further, the surface over which the oxide semiconductor layer is formed may have a crystallinity similar to that of the CAAC-OS film. In the case where the surface over which the oxide semiconductor layer is formed has the same crystallinity as the CAAC-OS film, the oxide semiconductor layer is likely to be a CAAC-OS film.

  Since the oxide semiconductor layer is a layer in which a channel is formed, it is preferable that the oxide semiconductor layer have high crystallinity because stable electrical characteristics can be imparted to the transistor.

  This embodiment can be implemented in appropriate combination with any of the other embodiments described in this specification.

(Embodiment 4)
In this embodiment, a light-emitting device of one embodiment of the present invention will be described with reference to FIGS.

In one embodiment of the present invention, an insulating layer with high gas barrier properties (low gas permeability) is used as at least one of the insulating layers included in the light-emitting device. An insulating layer having a high gas barrier property can be applied to, for example, a base film or a protective layer of a light-emitting device. For example, the water vapor permeation amount of the insulating layer having a high gas barrier property is 1 × 10 ⁻⁴ [g / m ² · day] in a high temperature and high humidity environment (for example, temperature 65 ° C., humidity 95%, 1 atm). Or less, preferably 1 × 10 ⁻⁵ [g / m ² · day] or less, more preferably 1 × 10 ⁻⁶ [g / m ² · day] or less, more preferably 1 × 10 ⁻⁷ [g / m ² · Day] or less, more preferably 1 × 10 ⁻⁸ [g / m ² · day] or less. With such an insulating layer, a highly reliable light-emitting device can be realized.

  In the light-emitting device of one embodiment of the present invention, a material whose gas barrier property (gas permeability) is evaluated using the film evaluation method of one embodiment of the present invention described in detail in Embodiment 2 is used as a component. It has an insulating layer. By using a material that has been evaluated to have sufficiently high gas barrier properties (gas permeability is sufficiently low), in one embodiment of the present invention, a highly reliable light-emitting device can be realized.

  FIG. 6A is a schematic top view of the light emitting device 400. FIG. 6B is a schematic cross-sectional view taken along a cutting line EF in FIG. The light emitting device 400 is an illumination device that employs a top emission method. Note that description of components that are the same as those of the display device 200 described in Embodiment 1 is omitted or simplified.

  The light-emitting device 400 includes an insulating layer 255 over a flexible substrate 254 with an adhesive layer 251 interposed therebetween. The light emitting device 400 includes the light emitting element 240 over the insulating layer 255. The light emitting element 240 is covered with a protective layer 239. The light-emitting device 400 includes a flexible substrate 253 on the protective layer 239 with an adhesive layer 252 interposed therebetween.

  In the region where the flexible substrate 254 and the flexible substrate 253 do not overlap, the extraction electrode 403 electrically connected to the first electrode 233 of the light-emitting element 240 and the extraction electrode electrically connected to the second electrode 237 407 is provided.

  Here, the structure including the light-emitting element 240 and the protective layer 239 corresponds to the element layer 270.

  For the protective layer 239, the flexible substrate 253, and the adhesive layer 252, a material that transmits light from the EL layer 235 is used.

  FIG. 6B illustrates an example in which the extraction electrode 403 and the extraction electrode 407 are formed on the same plane and include the same layer as the first electrode 233. Here, a part of the first electrode 233 constitutes the extraction electrode 403.

  The second electrode 237 is provided so as to be in contact with the extraction electrode 407 across the insulating layer 409 covering the step portions of the first electrode 233 and the extraction electrode 407, and is electrically connected thereto.

  Note that the extraction electrode 403 and the extraction electrode 407 may be separately formed using a conductive film different from that of the first electrode 233. At this time, it is preferable to use a conductive film containing copper for the conductive film because conductivity can be increased.

  The insulating layer 409 is provided so as to cover the end portion of the first electrode 233 so that the second electrode 237 does not short-circuit with the first electrode 233. In addition, in order to improve the coverage of the second electrode 237 formed on the insulating layer 409, a curved surface having a curvature radius (0.2 μm to 3 μm) is formed at the upper end or the lower end of the insulating layer 409. It is preferable to have it. As a material for the insulating layer 409, an organic compound such as a negative photosensitive resin that becomes insoluble in an etchant by light irradiation, or a positive photosensitive resin that becomes soluble in an etchant by light irradiation, Inorganic compounds such as silicon oxide and silicon oxynitride can be used.

  Further, as shown in FIGS. 6A and 6B, it is preferable that a lens-like uneven shape is formed on the surface of the flexible substrate 253 that does not face the light emitting element 240. The uneven shape is provided for the purpose of suppressing total reflection of light emission from the light emitting element 240 at the interface between the flexible substrate 253 and the outside (air). As the flexible substrate 253, a lens array made of a photorefractive material, a microlens array, a diffusion sheet, a diffusion film, or the like can be used. In particular, when a microlens array is used, the light extraction efficiency can be improved efficiently and the viewing angle dependency can be further improved, so that an illumination device with uniform light emission luminance can be realized.

  In addition, as a method for forming an uneven shape on the surface of the flexible substrate 253, a photolithography method, a nanoimprint method, a sand blast method, or the like can be used as appropriate.

  Here, the refractive index of the flexible substrate 253 is preferably equal to or higher than the refractive index of the adhesive layer 252. That is, it is preferable to set the refractive index to be higher as the film is farther from the light emitting element 240. With such a configuration, total reflection at the interface of each layer is suppressed, and substantially all light emitted from the light emitting element 240 can be extracted.

  In the light-emitting device 400, an insulating layer having a high gas barrier property is used as at least one of the insulating layer 255, the insulating layer 409, and the protective layer 239. Thereby, a highly reliable light-emitting device can be realized. The insulating layer 255, the insulating layer 409, or the protective layer 239 can be formed using a material that can be used for the insulating layer described in Embodiment 1.

  This embodiment can be implemented in appropriate combination with any of the other embodiments described in this specification.

(Embodiment 5)
In this embodiment, examples of an electronic device and a lighting device, and an application example of a display device will be described.

  The electronic device of this embodiment includes at least one of the display device, the semiconductor device, and the light-emitting device of one embodiment of the present invention. The lighting device of this embodiment includes the light-emitting device of one embodiment of the present invention.

  The display device, the semiconductor device, and the light-emitting device of one embodiment of the present invention include a film having a sufficiently high gas barrier property (a sufficiently low gas permeability) as a component. Therefore, a highly reliable electronic device or lighting device can be realized.

In one embodiment of the present invention, an insulating layer with high gas barrier properties (low gas permeability) is used for at least one of insulating layers of a display device, a semiconductor device, and a light-emitting device. The insulating layer having a high gas barrier property is applied to, for example, a base film, a gate insulating layer or a protective layer of a transistor, or a protective layer of a light-emitting element. For example, the water vapor permeation amount of the insulating layer having a high gas barrier property is 1 × 10 ⁻⁴ [g / m ² · day] in a high temperature and high humidity environment (for example, temperature 65 ° C., humidity 95%, 1 atm). Or less, preferably 1 × 10 ⁻⁵ [g / m ² · day] or less, more preferably 1 × 10 ⁻⁶ [g / m ² · day] or less, more preferably 1 × 10 ⁻⁷ [g / m ² · Day] or less, more preferably 1 × 10 ⁻⁸ [g / m ² · day] or less. By using a display device, a semiconductor device, or a light-emitting device having such an insulating layer, a highly reliable electronic device or lighting device can be realized.

  In one embodiment of the present invention, an insulating layer using a material whose gas barrier property (gas permeability) is evaluated using the film evaluation method of one embodiment of the present invention described in detail in Embodiment 2 is used as a component. Have. With the use of a material that has been evaluated to have sufficiently high gas barrier properties (gas permeability is sufficiently low), in one embodiment of the present invention, a highly reliable electronic device or lighting device can be realized.

  7A to 7H and FIGS. 8A to 8D illustrate electronic devices. These electronic devices include a housing 5000, a display portion 5001, a speaker 5003, an LED lamp 5004, operation keys 5005 (including a power switch or operation switch), a connection terminal 5006, and a sensor 5007 (force, displacement, position, speed, Measure acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemical, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell or infrared A microphone 5008, and the like.

  FIG. 7A illustrates a mobile computer which can include a switch 5009, an infrared port 5010, and the like in addition to the above components. FIG. 7B illustrates a portable image reproducing device (eg, a DVD reproducing device) provided with a recording medium, which includes a second display portion 5002, a recording medium reading portion 5011, and the like in addition to the above-described components. it can. FIG. 7C illustrates a goggle type display which can include a second display portion 5002, a support portion 5012, an earphone 5013, and the like in addition to the above components. FIG. 7D illustrates a portable game machine which can include the memory medium reading portion 5011 and the like in addition to the above objects. FIG. 7E illustrates a digital camera with a television receiving function, which can include an antenna 5014, a shutter button 5015, an image receiving portion 5016, and the like in addition to the above objects. FIG. 7F illustrates a portable game machine that can include the second display portion 5002, the recording medium reading portion 5011, and the like in addition to the above objects. FIG. 7G illustrates a television receiver that can include a tuner, an image processing portion, and the like in addition to the above components. FIG. 7H illustrates a portable television receiver that can include a charger 5017 that can transmit and receive signals in addition to the above components. FIG. 8A illustrates a display which can include a support base 5018 and the like in addition to the above objects. FIG. 8B illustrates a camera which can include an external connection port 5019, a shutter button 5015, an image receiving portion 5016, and the like in addition to the above components. FIG. 8C illustrates a computer which can include a pointing device 5020, an external connection port 5019, a reader / writer 5021, and the like in addition to the above components. FIG. 8D illustrates a mobile phone, which can include a transmission unit, a reception unit, a one-segment partial reception service tuner for a mobile phone / mobile terminal, and the like in addition to the above-described components.

  The electronic devices illustrated in FIGS. 7A to 7H and FIGS. 8A to 8D can have a variety of functions. For example, a function for displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function for displaying a calendar, date or time, a function for controlling processing by various software (programs), Wireless communication function, function for connecting to various computer networks using the wireless communication function, function for transmitting or receiving various data using the wireless communication function, and reading and displaying the program or data recorded on the recording medium It can have a function of displaying on the section. Further, in an electronic device having a plurality of display units, one display unit mainly displays image information and another one display unit mainly displays character information, or the plurality of display units consider parallax. It is possible to have a function of displaying a three-dimensional image, etc. by displaying the obtained image. Furthermore, in an electronic device having an image receiving unit, a function for capturing a still image, a function for capturing a moving image, a function for automatically or manually correcting a captured image, and a captured image on a recording medium (externally or incorporated in a camera) A function of saving, a function of displaying a captured image on a display portion, and the like can be provided. Note that the functions of the electronic devices illustrated in FIGS. 7A to 7H and 8A to 8D are not limited to these, and can include various functions. .

  The electronic device described in this embodiment includes a display portion for displaying some information.

  Next, application examples of the display device will be described.

  FIG. 8E illustrates an example in which the display device is provided so as to be integrated with a building. FIG. 8E includes a housing 5022, a display portion 5023, a remote control device 5024 which is an operation portion, a speaker 5025, and the like. The display device is integrated with the building as a wall-hanging type, and can be installed without requiring a large installation space.

  FIG. 8F illustrates another example in which the display device is provided so as to be integrated with the building. The display module 5026 is attached to the unit bath 5027 so that the bather can view the display module 5026.

  Note that in this embodiment, a wall and a unit bus are used as buildings as examples, but this embodiment is not limited to this, and display devices can be installed in various buildings.

  Next, an example in which the display device is provided integrally with the moving body is described.

  FIG. 8G illustrates an example in which the display device is provided in a car. The display module 5028 is attached to the vehicle body 5029 of the automobile, and can display the operation of the vehicle body or information input from inside and outside the vehicle body on demand. Note that a navigation function may be provided.

  FIG. 8H is a diagram illustrating an example in which the display device is provided integrally with a passenger airplane. FIG. 8H is a diagram showing a shape in use when the display module 5031 is provided on the ceiling 5030 above the seat of the passenger airplane. The display module 5031 is integrally attached via a ceiling 5030 and a hinge portion 5032, and passengers can view the display module 5031 by extension and contraction of the hinge portion 5032. The display module 5031 has a function of displaying information when operated by a passenger.

  In this embodiment, examples of the moving body include an automobile body and an airplane body. However, the present invention is not limited to this, and motorcycles, automobiles (including automobiles, buses, etc.), trains (monorails, railways, etc.) can be used. It can be installed on various things such as ships).

  Next, examples of an electronic device or a lighting device to which a light-emitting device having a flexible shape is applied are shown. Examples of such electronic devices include a television device (also referred to as a television or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (a mobile phone, a mobile phone device). Also, a large game machine such as a portable game machine, a portable information terminal, a sound reproduction device, and a pachinko machine can be given. It is also possible to incorporate lighting and display devices along the inner or outer wall of a house or building, or along the curved surface of the interior or exterior of an automobile.

  FIG. 9A illustrates an example of a mobile phone. A mobile phone 7400 is provided with a display portion 7402 incorporated in a housing 7401, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. Note that the cellular phone 7400 is manufactured using the light-emitting device for the display portion 7402.

  Information can be input to the cellular phone 7400 illustrated in FIG. 9A by touching the display portion 7402 with a finger or the like. In addition, any operation such as making a call or inputting characters can be performed by touching the display portion 7402 with a finger or the like.

  Further, by operating the operation button 7403, the power can be turned on and off, and the type of image displayed on the display portion 7402 can be switched. For example, the mail creation screen can be switched to the main menu screen.

  Here, the display portion 7402 incorporates the light-emitting device of one embodiment of the present invention. Therefore, a highly reliable mobile phone including a curved display portion can be provided.

  FIG. 9B illustrates an example of a wristband display device. A portable display device 7100 includes a housing 7101, a display portion 7102, operation buttons 7103, and a transmission / reception device 7104.

  The portable display device 7100 can receive a video signal by the transmission / reception device 7104 and can display the received video on the display portion 7102. Also, the audio signal can be transmitted to another receiving device.

  Further, the operation button 7103 can be used to perform power ON / OFF operation, switching of a video to be displayed, or adjusting an audio volume.

  Here, the display portion 7102 incorporates the light-emitting device of one embodiment of the present invention. Therefore, the portable display device can be provided with a curved display portion and high reliability.

  9C to 9E illustrate an example of a lighting device. Each of the lighting devices 7200, 7210, and 7220 includes a base portion 7201 including an operation switch 7203 and a light-emitting portion supported by the base portion 7201.

  A lighting device 7200 illustrated in FIG. 9C includes a light-emitting portion 7202 having a wavy light-emitting surface. Therefore, the lighting device has high design.

  A light emitting portion 7212 included in the lighting device 7210 illustrated in FIG. 9D has a structure in which two light emitting portions curved in a convex shape are arranged symmetrically. Accordingly, all directions can be illuminated with the lighting device 7210 as the center.

  A lighting device 7220 illustrated in FIG. 9E includes a light-emitting portion 7222 that is curved in a concave shape. Therefore, since the light emitted from the light emitting unit 7222 is condensed on the front surface of the lighting device 7220, it is suitable for brightly illuminating a specific range.

  In addition, since each light emitting unit included in the lighting device 7200, the lighting device 7210, and the lighting device 7220 has flexibility, the light emitting unit is fixed with a member such as a plastic member or a movable frame, and is adapted to the use. It is good also as a structure which can bend the light emission surface of a light emission part freely.

  Note that although the lighting device in which the light emitting unit is supported by the base is illustrated here, the housing including the light emitting unit may be fixed to the ceiling or used so as to be suspended from the ceiling. Since the light emitting surface can be curved and used, a specific area can be illuminated brightly by curving the light emitting surface, or the entire room can be illuminated brightly by curving the light emitting surface convexly.

  Here, the light-emitting device of one embodiment of the present invention is incorporated in each light-emitting portion. Therefore, a lighting device having a curved light emitting surface and high reliability can be obtained.

  This embodiment can be implemented in appropriate combination with any of the other embodiments described in this specification.

  In this example, an evaluation sample was manufactured using the method for manufacturing an evaluation sample of one embodiment of the present invention.

[Production of evaluation samples]
First, a silicon oxynitride film having a thickness of about 100 nm was formed on the first glass substrate by a plasma CVD method. Next, a tungsten film having a thickness of about 30 nm was formed as a release layer by a sputtering method. Next, after the surface of the tungsten film was subjected to N ₂ O plasma treatment, a silicon oxynitride film having a thickness of about 600 nm was continuously formed as a first film to be evaluated by a plasma CVD method. Then, the outer peripheral part of the peeling layer and the first film to be evaluated was removed by etching and processed into an island shape. Next, as a second film to be evaluated, a silicon nitride film having a thickness of about 200 nm, a silicon oxynitride film having a thickness of about 200 nm, a silicon nitride oxide film having a thickness of about 140 nm, and a silicon oxynitride film having a thickness of about 100 nm are used. Films were continuously formed by a plasma CVD method. Thereafter, a heat treatment was performed at 480 ° C. for 1 hour.

  Subsequently, a titanium film having a thickness of about 100 nm, an aluminum film having a thickness of about 400 nm, and a titanium film having a thickness of about 100 nm are successively formed on the second film to be evaluated by a sputtering method. Processing was performed to form a stripe-shaped wiring. The wiring was provided to prevent defects such as cracks in the peeling process.

  Subsequently, a calcium film having a thickness of about 100 nm was formed as a detection layer on the second film to be evaluated and the wiring by a vacuum deposition method using a shadow mask. Next, an aluminum film having a thickness of about 800 nm was formed as a barrier layer so as to cover the calcium film by a vacuum deposition method using a shadow mask.

  Thereafter, an ultraviolet curable acrylic resin was applied as an adhesive layer on the aluminum film, a second glass substrate was attached, and then the acrylic resin was irradiated with ultraviolet rays to be cured.

  Thereafter, the outer peripheral portions of the two glasses are cut so that the side surfaces of the tungsten film and the first film to be evaluated are exposed, and the tungsten film and the first film to be evaluated are peeled to form a tungsten film. The first glass substrate thus formed was removed.

  In this way, an evaluation sample was obtained in which the adhesive layer, the barrier layer, the detection layer, the first film to be evaluated, and the second film to be evaluated were sequentially stacked on the second substrate.

  As described above, an evaluation sample can be manufactured by the method for manufacturing an evaluation sample of one embodiment of the present invention.

  This example can be implemented in combination with any of the other embodiments described in this specification as appropriate.

100 Evaluation Sample 101 Substrate 102 Peeling Layer 104 Target Film 105 Detection Layer 106 Barrier Layer 107 Adhesive Layer 108 Substrate 111 Stage 112 Camera 113 Arithmetic Device 200 Display Device 201 Display Unit 202 Scan Line Driver Circuit 203 Signal Line Driver Circuit 204 External Connection Terminal 205 FPC
206 connector 211 transistor 212 transistor 213 transistor 214 transistor 216 insulating layer 217 insulating layer 218 insulating layer 219 insulating layer 221 color filter 222 black matrix 223 insulating layer 233 first electrode 235 EL layer 237 second electrode 239 protective layer 240 light emission Element 250 Display device 251 Adhesive layer 252 Adhesive layer 253 Flexible substrate 254 Flexible substrate 255 Insulating layer 270 Element layer 300 Transistor 301 Gate electrode 302 Gate insulating layer 303 Semiconductor layer 304a Source electrode 304b Drain electrode 305 Protective layer 306 Insulating layer 310 Transistor 320 Transistor 330 Substrate 400 Light-emitting device 403 Extraction electrode 407 Extraction electrode 409 Insulating layer 5000 Housing 5001 Display portion 5002 Display portion 5003 Peaker 5004 LED lamp 5005 Operation key 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared port 5011 Recording medium reading unit 5012 Support unit 5013 Earphone 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5017 Charger 5018 Support base 5019 External connection port 5020 Pointing device 5021 Reader / Writer 5022 Housing 5023 Display unit 5024 Remote control device 5025 Speaker 5026 Display module 5027 Unit bus 5028 Display module 5029 Car body 5030 Ceiling 5031 Display module 5032 Hinge unit 7100 Portable display device 7101 Housing 7102 Display unit 7103 Operation button 7104 Transmission / reception device 7200 Illuminating device 7201 Stand 720 Emitting portion 7203 operation switches 7210 lighting device 7212 emitting portion 7220 lighting device 7222 emitting unit 7400 cellular telephone 7401 housing 7402 display unit 7403 operation button 7404 an external connection port 7405 speaker 7406 microphone

Claims (3)

Forming a release layer on the first substrate;
Forming a film to be evaluated on the release layer;
Forming a detection layer on the film to be evaluated;
Forming a barrier layer covering the detection layer;
A second substrate facing the first substrate is provided on the barrier layer via an adhesive layer,
Peeling between the peeling layer and the film to be evaluated to remove the first substrate;
A method for producing an evaluation sample. Forming an island-shaped release layer on the first substrate;
Forming an evaluation film covering the release layer;
Forming a detection layer on the film to be evaluated;
Forming a barrier layer covering the detection layer;
A second substrate facing the first substrate is provided on the barrier layer via an adhesive layer,
Cutting the outer periphery of the first substrate and the second substrate so as to divide the release layer;
Peeling between the peeling layer and the film to be evaluated to remove the first substrate;
A method for producing an evaluation sample. An evaluation sample is produced by the method for producing an evaluation sample according to claim 1 or 2,
After exposing the evaluation sample to a test environment,
Optically observing the detection layer in the evaluation sample, measuring the area of the region where the optical properties of the detection layer have changed,
Based on the area and exposure time, calculate the gas permeation amount of the film to be evaluated.
Evaluation method of membrane.