JP6020681B2 - LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE - Google Patents

Description

  The present invention relates to a light emitting element, a light emitting device, and an electronic apparatus.

  An organic electroluminescence element (so-called organic EL element) is a light emitting element having a structure in which at least one light emitting organic layer is interposed between an anode and a cathode. In such a light emitting device, by applying an electric field between the cathode and the anode, electrons are injected into the light emitting layer from the cathode side and holes are injected from the anode side, and electrons and holes are injected into the light emitting layer. Recombination generates excitons, and when the excitons return to the ground state, the energy is emitted as light.

As such a light emitting element, an element that emits infrared light in a long wavelength region exceeding 700 nm, that is, a near infrared region is known (for example, see Patent Documents 1 and 2).
For example, in the light-emitting element described in Patent Documents 1 and 2, light emission is achieved by using a material in which an amine as an electron donor and a nitrile group as an electron acceptor are used as functional groups in the molecule as a dopant in the light-emitting layer. The wavelength is increased.

However, conventionally, it has not been possible to realize a highly efficient and long-life device that emits light in the near infrared region.
Therefore, it is possible to realize a light-emitting element including a light-emitting layer that emits light in the near-infrared region and a light-emitting layer that emits light in the visible light region. However, when applied to such a light-emitting device, long-term light emission in the visible light region can be realized. However, long-term light emission in the near infrared region could not be realized.

JP 2000-091973 A JP 2001-110570 A

  An object of the present invention is to provide a light emitting element including an infrared light emitting layer that emits infrared light with high efficiency and a long life, a visible light light emitting layer that emits visible light with a high efficiency and a long life, and a light emitting device including the light emitting element. And providing electronic equipment.

これにより、高効率かつ長寿命に赤外線を発光する赤外線発光層と、高効率かつ長寿命に可視光を発光する可視光発光層とを備える発光素子とすることができる。 Such an object is achieved by the present invention described below.
The light emitting device of the present invention comprises an anode,
A cathode,
Provided between the anode and the cathode, the visible light-emitting layer to emit visible light, possess an intermediate layer, and the infrared light emitting layer which emits infrared,
The visible light emitting layer, the intermediate layer, and the infrared light emitting layer are laminated in this order from the anode side,
The infrared light emitting layer contains a platinum complex compound represented by the following general formula (2) as a light emitting material, and a quinolinolato metal complex as a host material,
The intermediate layer includes an acene-based material and an amine-based material .

Thereby, it can be set as a light emitting element provided with the infrared light emitting layer which light-emits infrared light with high efficiency and long lifetime, and the visible light light emitting layer which light-emits visible light with high efficiency and long life.

In the light emitting device of the present invention, it is preferable to emit white light as the visible light.
Thereby, the light emitting element of this structure is applicable to the light source for illumination and the light source of a skin diagnostic apparatus.
In the light emitting device of the present invention, it is preferable to emit green light as the visible light.
Thereby, the light emitting element of this structure is applicable to the light source of a pulse measuring device and an authentication device.
The light-emitting device of the present invention includes the light-emitting element of the present invention.
Thereby, a light emitting device with excellent reliability can be obtained.
An electronic apparatus according to the present invention includes the light emitting device according to the present invention.
Thereby, it can be set as the electronic device excellent in reliability.

It is sectional drawing which shows typically 1st Embodiment of the light emitting element of this invention. It is sectional drawing which shows typically 2nd Embodiment of the light emitting element of this invention. It is sectional drawing which shows typically 3rd Embodiment of the light emitting element of this invention. It is sectional drawing which shows typically 4th Embodiment of the light emitting element of this invention. It is sectional drawing which shows typically 5th Embodiment of the light emitting element of this invention. It is a figure which shows embodiment of the light source for illumination to which the light-emitting device of this invention is applied. It is a figure which shows embodiment of the skin diagnostic apparatus to which the light-emitting device of this invention is applied. It is a figure which shows embodiment of the pulse measuring device to which the light-emitting device of this invention is applied. It is a figure which shows embodiment of the authentication apparatus to which the light-emitting device of this invention is applied. 1 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which an electronic apparatus of the present invention is applied. It is a figure which shows the emission spectrum in the light emitting element of Examples 1-4. It is a figure which shows the emission spectrum in the light emitting element of Examples 5-8. It is a figure which shows the emission spectrum in the light emitting element of the reference examples 1 and 2. FIG.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the light-emitting element, the light-emitting device, and the electronic apparatus of the invention will be described with reference to the accompanying drawings.
<First Embodiment>
First, a first embodiment of the light emitting device of the present invention will be described.
FIG. 1 is a cross-sectional view schematically showing a first embodiment of a light emitting device of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 1 will be described as “upper” and the lower side as “lower”.

  1 includes an anode 3, a hole injection layer 4, a hole transport layer 5, an infrared light emitting layer 6, a red light emitting layer 7R, a first intermediate layer 8A, and a blue light emitting layer 7B. The green light emitting layer 7G, the electron transport layer 9, the electron injection layer 10, and the cathode 11 are laminated in this order. That is, in the light emitting element 1, between the anode 3 and the cathode 11, from the anode 3 side to the cathode 11 side, the hole injection layer 4, the hole transport layer 5, the infrared light emitting layer 6, the red light emitting layer 7R, and the first intermediate layer. A laminated body 14 in which the layer 8A, the blue light emitting layer 7B, the green light emitting layer 7G, the electron transport layer 9, and the electron injection layer 10 are laminated in this order is interposed.

The entire light emitting element 1 is provided on the substrate 2 and sealed with a sealing member 12.
In such a light emitting device 1, electrons are supplied (injected) from the cathode 11 side to the light emitting layers of the infrared light emitting layer 6, the red light emitting layer 7R, the blue light emitting layer 7B, and the green light emitting layer 7G. At the same time, holes are supplied (injected) from the anode 3 side. In each light emitting layer, holes and electrons recombine, and excitons (excitons) are generated by the energy released during the recombination, and energy (fluorescence or phosphorescence) is generated when the excitons return to the ground state. Release. Therefore, the infrared light emitting layer 6 emits infrared light, and the red light emitting layer 7R, the blue light emitting layer 7B, and the green light emitting layer 7G emit red, blue, and green visible light, respectively. Thereby, the light emitting element 1 emits infrared rays and white visible light. In the present embodiment, the visible light emitting layer 7 that emits visible light is composed of the red light emitting layer 7R, the blue light emitting layer 7B, and the green light emitting layer 7G.

  In the present embodiment, since the light emitting element 1 includes the first intermediate layer 8A between the red light emitting layer 7R and the blue light emitting layer 7B, the light emitting element 1 is interposed between the red light emitting layer 7R and the blue light emitting layer 7B. Therefore, the exciton energy transfer between the red light emitting layer 7R and the blue light emitting layer 7B can be prevented. As a result, the red light-emitting layer 7R and the blue light-emitting layer 7B emit light in a balanced manner, and the light-emitting element 1 emits white light more reliably as visible light.

Furthermore, the infrared light emitting layer 6 can emit light in the near infrared region by using a light emitting material as described later. In the present specification, the “near infrared region” refers to a wavelength region of 700 nm to 1500 nm.
The substrate 2 supports the anode 3. Since the light-emitting element 1 of the present embodiment is configured to extract light from the substrate 2 side (bottom emission type), the substrate 2 and the anode 3 are substantially transparent (colorless transparent, colored transparent, or translucent), respectively. Has been.

Examples of the constituent material of the substrate 2 include resin materials such as polyethylene terephthalate, polyethylene naphthalate, polypropylene, cycloolefin polymer, polyamide, polyethersulfone, polymethyl methacrylate, polycarbonate, and polyarylate, quartz glass, and soda glass. Such glass materials can be used, and one or more of these can be used in combination.
Although the average thickness of such a board | substrate 2 is not specifically limited, It is preferable that it is about 0.1-30 mm, and it is more preferable that it is about 0.1-10 mm.

In the case where the light emitting element 1 is configured to extract light from the side opposite to the substrate 2 (top emission type), the substrate 2 can be either a transparent substrate or an opaque substrate.
Examples of the opaque substrate include a substrate made of a ceramic material such as alumina, an oxide film (insulating film) formed on the surface of a metal substrate such as stainless steel, and a substrate made of a resin material. It is done.
In such a light-emitting element 1, the distance between the anode 3 and the cathode 11 (that is, the average thickness of the laminate 14) is preferably 100 to 500 nm, and more preferably 100 to 300 nm. 100 to 250 nm is more preferable. Thereby, the drive voltage of the light emitting element 1 can be set within a practical range easily and reliably.

Hereinafter, each part which comprises the light emitting element 1 is demonstrated sequentially.
[anode]
The anode 3 is an electrode that injects holes into the hole transport layer 5 through a hole injection layer 4 described later. As a constituent material of the anode 3, it is preferable to use a material having a large work function and excellent conductivity.

Examples of the constituent material of the anode 3 include oxides such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), In ₃ O ₃ , SnO ₂ , Sb-containing SnO ₂ , and Al-containing ZnO, Au, Pt, Ag Cu, alloys containing these, and the like can be used, and one or more of these can be used in combination.
In particular, the anode 3 is preferably made of ITO. ITO is a material having transparency, a large work function, and excellent conductivity. Thereby, holes can be efficiently injected from the anode 3 into the hole injection layer 4.

Further, the surface of the anode 3 on the hole injection layer 4 side (the upper surface in FIG. 1) is preferably subjected to plasma treatment. Thereby, the chemical and mechanical stability of the joint surface between the anode 3 and the hole injection layer 4 can be enhanced. As a result, the hole injection property from the anode 3 to the hole injection layer 4 can be improved. Such plasma treatment will be described in detail in the description of the method for manufacturing the light emitting element 1 described later.
The average thickness of the anode 3 is not particularly limited, but is preferably about 10 to 200 nm, and more preferably about 50 to 150 nm.

[cathode]
On the other hand, the cathode 11 is an electrode that injects electrons into the electron transport layer 9 via an electron injection layer 10 described later. As a constituent material of the cathode 11, a material having a small work function is preferably used.
Examples of the constituent material of the cathode 11 include Li, Mg, Ca, Sr, La, Ce, Er, Eu, Sc, Y, Yb, Ag, Cu, Al, Cs, Rb, and alloys containing these. These can be used alone or in combination of two or more thereof (for example, as a laminate of a plurality of layers, a mixed layer of a plurality of types, or the like).

In particular, when an alloy is used as the constituent material of the cathode 11, it is preferable to use an alloy containing a stable metal element such as Ag, Al, or Cu, specifically, an alloy such as MgAg, AlLi, or CuLi. By using such an alloy as the constituent material of the cathode 11, the electron injection efficiency and stability of the cathode 11 can be improved.
Although the average thickness of such a cathode 11 is not specifically limited, It is preferable that it is about 100-10000 nm, and it is more preferable that it is about 100-500 nm.
In addition, since the light emitting element 1 of this embodiment is a bottom emission type, the cathode 11 is not particularly required to have light transmittance. In the case of the top emission type, since it is necessary to transmit light from the cathode 11 side, the average thickness of the cathode 11 is preferably about 1 to 50 nm.

[Hole injection layer]
The hole injection layer 4 has a function of improving the hole injection efficiency from the anode 3 (that is, has a hole injection property).
Thus, by providing the hole injection layer 4 between the anode 3 and the hole transport layer 5 described later, the hole property from the anode 3 is improved, and as a result, the light emission efficiency of the light emitting element 1 is increased. Can do.

The hole injection layer 4 includes a material having a hole injection property (that is, a hole injection material).
The hole injecting material contained in the hole injecting layer 4 is not particularly limited. For example, copper phthalocyanine, 4,4 ′, 4 ″ -tris (N, N-phenyl-3-methylphenylamino) ) Triphenylamine (m-MTDATA), N, N′-bis- (4-diphenylamino-phenyl) -N, N′-diphenyl-biphenyl-4-4′-diamine, and the like.

Among them, as the hole injecting material contained in the hole injecting layer 4, it is preferable to use an amine-based material from the viewpoint of excellent hole injecting property and hole transporting property, and a diaminobenzene derivative, a benzidine derivative (benzidine) It is more preferable to use a triamine-based compound or a tetraamine-based compound having both a “diaminobenzene” unit and a “benzidine” unit in the molecule.
The average thickness of the hole injection layer 4 is not particularly limited, but is preferably about 5 to 90 nm, and more preferably about 10 to 70 nm.
The hole injection layer 4 may be omitted depending on the constituent materials of the anode 3 and the hole transport layer 5.

[Hole transport layer]
The hole transport layer 5 has a function of transporting holes injected from the anode 3 through the hole injection layer 4 to the infrared light emitting layer 6 (that is, has a hole transport property).
The hole transport layer 5 includes a material having a hole transport property (that is, a hole transport material).

  As the hole transporting material contained in the hole transporting layer 5, various p-type polymer materials and various p-type low molecular materials can be used alone or in combination. For example, N, N′— Di (1-naphthyl) -N, N′-diphenyl-1,1′-diphenyl-4,4′-diamine (NPD), N, N′-diphenyl-N, N′-bis (3-methylphenyl) And tetraarylbenzidine derivatives such as -1,1′-diphenyl-4,4′-diamine (TPD), tetraaryldiaminofluorene compounds or derivatives thereof (amine compounds), etc., and one or two of these A combination of more than one species can be used.

Among them, the hole transport material contained in the hole transport layer 5 is preferably an amine-based material from the viewpoint of excellent hole injection property and hole transport property, and a benzidine derivative (a material having a benzidine skeleton). Is more preferable.
The average thickness of the hole transport layer 5 is not particularly limited, but is preferably about 5 to 90 nm, and more preferably about 10 to 70 nm.

[Infrared emitting layer]
The infrared light emitting layer 6 emits infrared light as emitted light when energized between the anode 3 and the cathode 11 described above.
Such an infrared light emitting layer 6 may be configured to include a light emitting material that emits infrared light as emitted light, and in particular, a light emitting material that emits infrared light in the near infrared region that is a wavelength region of 700 nm to 1500 nm. It is preferable that it is comprised including.

As such a light emitting material that emits infrared light in the near infrared region, a thiadiazole compound and a platinum complex compound are particularly preferably used.
Examples of the thiadiazole-based compound include compounds represented by the following formulas (1A), (1B), and (1C).
First, the compound represented by the following formula (1A) will be described.

［式（１Ａ）中、ＡおよびＢは、それぞれ独立に、水素原子、アルキル基、置換基を有していてもよいアリール基、アリールアミノ基、トリアリールアミンを示す。］

[In Formula (1A), A and B each independently represent a hydrogen atom, an alkyl group, an aryl group optionally having a substituent, an arylamino group, or a triarylamine. ]

By setting it as the structure containing such a thiadiazole type compound as a luminescent material, the infrared rays light emitting layer 6 can obtain light emission in a wavelength range (near infrared region) of 700 nm or more.
In particular, as the light emitting material (thiadiazole compound) used for the infrared light emitting layer 6, it is preferable to use a compound represented by the following formula (2A) or formula (3A).

［式（２Ａ）、（３Ａ）中、Ａは、それぞれ独立に、水素原子、アルキル基、置換基を有していてもよいアリール基、アリールアミノ基、トリアリールアミンを示す。］

[In formulas (2A) and (3A), A independently represents a hydrogen atom, an alkyl group, an aryl group optionally having a substituent, an arylamino group, or a triarylamine. ]

That is, in the formula (1A), it is preferable that B is a phenyl group or a methyl group, respectively.
Each of the phenyl group and the methyl group has relatively high chemical stability. Therefore, by using such a compound as a light emitting material included in the infrared light emitting layer 6, the life of the infrared light emitting layer 6 and thus the light emitting element 1 can be extended. Further, since the molecular weight of the light emitting material can be kept relatively small, the infrared light emitting layer 6 can be formed with high accuracy by using vapor phase film formation. As a result, also in this respect, the light emitting element 1 can be made highly efficient and have a long life.
Further, as the light emitting material used for the infrared light emitting layer 6, it is preferable to use compounds represented by the following formulas (4A) to (9A), and specifically, represented by the following formulas D-1 to D-3. It is preferable to use a compound.

［式（４Ａ）〜（９Ａ）中、Ｒは、それぞれ独立に、水素原子、アルキル基、置換基を有していてもよいアリール基を示す。また、隣合う２つのＲの炭素同士が連結して環状をなしていてもよい。］

[In the formulas (4A) to (9A), R each independently represents a hydrogen atom, an alkyl group, or an aryl group which may have a substituent. Two adjacent R carbons may be linked to form a ring. ]

  Next, the compound represented by the following formula (1B) will be described.

［式（１Ｂ）中、Ａは、それぞれ独立に、水素原子、アルキル基、置換基を有していてもよいアリール基、アリールアミノ基、トリアリールアミンを示す。］

[In the formula (1B), A independently represents a hydrogen atom, an alkyl group, an aryl group optionally having a substituent, an arylamino group, or a triarylamine. ]

By setting it as the structure containing such a thiadiazole type compound as a luminescent material, the infrared rays light emitting layer 6 can obtain light emission in a wavelength range (near infrared region) of 700 nm or more.
In particular, as the light emitting material used for the infrared light emitting layer 6, it is preferable to use compounds represented by the following formulas (2B) to (4B), specifically, for example, represented by the following formulas D-4 to D-6. It is preferable to use a compound.

［式（２Ｂ）〜（４Ｂ）中、Ｒは、それぞれ独立に、水素原子、アルキル基、置換基を有していてもよいアリール基を示す。また、隣り合う２つのＲの炭素同士が連結して環状をなしていてもよい。］

[In the formulas (2B) to (4B), R each independently represents a hydrogen atom, an alkyl group, or an aryl group which may have a substituent. Two adjacent R carbons may be linked to form a ring. ]

  Next, the compound represented by the following formula (1C) will be described.

［式（１Ｃ）中、ＡおよびＢは、それぞれ独立に、水素原子、アルキル基、置換基を有していてもよいアリール基、アリールアミノ基、トリアリールアミンを示す。］

[In Formula (1C), A and B each independently represent a hydrogen atom, an alkyl group, an aryl group optionally having a substituent, an arylamino group, or a triarylamine. ]

The light emitting layer 6 containing such a thiadiazole-based compound can obtain light emission in a wavelength region (near infrared region) of 700 nm or more.
Moreover, as a luminescent material used for the light emitting layer 6, it is preferable to use the compound represented by following formula (2C)-(4C) from a viewpoint that improvement in efficiency and lifetime can be aimed at, specifically, In particular, it is preferable to use compounds represented by the following formulas D-7 to D-9.

［式（２Ｃ）〜（４Ｃ）中、Ｒは、それぞれ独立に、水素原子、アルキル基、置換基を有していてもよいアリール基を示す。また、隣合う２つのＲの炭素同士が連結して環状をなしていてもよい。］

[In the formulas (2C) to (4C), each R independently represents a hydrogen atom, an alkyl group, or an aryl group which may have a substituent. Two adjacent R carbons may be linked to form a ring. ]

  In addition, examples of the platinum complex compound include compounds represented by the following formula (2).

Even in the infrared light emitting layer 6 containing such a platinum complex compound (specifically, Pt (II) Tetrahenyl tetrabenzo porphrin: Pt (TPTBP)), light emission in a wavelength region of 700 nm or more (near infrared region) can be obtained. Can do.
The infrared light emitting layer 6 may contain light emitting materials (various fluorescent materials and various phosphorescent materials) other than the above-described light emitting materials.

As the constituent material of the infrared light emitting layer 6, in addition to the light emitting material as described above, it is preferable to use a host material to which this light emitting material is added (supported) as a guest material (dopant).
This host material recombines holes and electrons to generate excitons and to transfer the exciton energy to the luminescent material (Felster movement or Dexter movement) to excite the luminescent material. Have. Therefore, the light emission efficiency of the light emitting element 1 can be increased. Such a host material can be used by, for example, doping a host material with a light-emitting material that is a guest material as a dopant.

Such a host material is not particularly limited as long as it exhibits the functions described above for the light emitting material to be used. For example, a distyrylarylene derivative, a naphthacene derivative, 2-t-butyl-9, Anthracene derivatives such as 10-di (2-naphthyl) anthracene (TBADN), perylene derivatives, distyrylbenzene derivatives, distyrylamine derivatives, bis (2-methyl-8-quinolinolato) (p-phenylphenolato) aluminum (BAlq) ), Quinolinolato metal complexes such as tris (8-quinolinolato) aluminum complex (Alq ₃ ), triarylamine derivatives such as tetramers of triphenylamine, oxadiazole derivatives, rubrene and its derivatives, silole derivatives, dicarbazole Derivatives, oligothiophene derivatives Benzopyran derivatives, triazole derivatives, benzoxazole derivatives, benzothiazole derivatives, quinoline derivatives, 4,4'-bis (2,2'-diphenylvinyl) biphenyl (DPVBi), 3-phenyl-4- (1'-naphthyl)- Examples thereof include carbazole derivatives such as 5-phenylcarbazole and 4,4′-N, N′-dicarbazole biphenyl (CBP), and one of these may be used alone or in combination of two or more.
Among these, it is preferable to use an acene-based material as the host material.

The acene-based material is rarely used for unintentional mutual materials with the light emitting material as described above. In addition, when an acene-based material (particularly an anthracene-based material or a tetracene-based material) is used as the host material, energy transfer from the host material to the light-emitting material can be efficiently performed. This is because (a) it is possible to generate a singlet excited state of the luminescent material by energy transfer from the triplet excited state of the acene-based material, and (b) a π electron cloud of the acene-based material and an electron cloud of the luminescent material. And (c) the overlap between the fluorescence spectrum of the acene-based material and the absorption spectrum of the light-emitting material is increased.
Therefore, when an acene-based material is used as the host material, the light emission efficiency of the light-emitting element 1 can be increased.

  Acene-based materials are excellent in resistance to electrons and holes. Acene-based materials are also excellent in thermal stability. Therefore, the life of the light emitting element 1 can be extended. In addition, since the acene-based material is excellent in thermal stability, the host material can be prevented from being decomposed by heat at the time of film formation when the light emitting layer is formed using the vapor phase film formation method. Therefore, a light emitting layer having excellent film quality can be formed. As a result, the light emission efficiency of the light emitting element 1 can be increased and the life can be extended.

Furthermore, since the acene-based material itself does not easily emit light, the host material can be prevented from adversely affecting the emission spectrum of the light-emitting element 1.
Such an acene-based material is not particularly limited as long as it has an acene skeleton and exhibits the effects described above. For example, naphthalene derivatives, anthracene derivatives, naphthacene derivatives (tetracene derivatives), pentacene Derivatives are listed, and one or more of these can be used in combination, but anthracene derivatives (anthracene-based materials) or tetracene derivatives (tetracene-based materials) are preferably used.
Thereby, electrons can be efficiently delivered from the red light emitting layer 7 </ b> R to the anthracene material or tetracene material in the infrared light emitting layer 6.

  The tetracene-based material is not particularly limited as long as it has at least one tetracene skeleton in one molecule and can function as a host material as described above. For example, the following formula IRH The compound represented by -1 is preferably used, the compound represented by the following formula IRH-2 is more preferably used, and the compound represented by the following IRH-3 is more preferably used.

［前記式ＩＲＨ−１中、ｎは、１〜１２の自然数を示し、Ｒは置換機または官能基を表し、それぞれ独立に、水素原子、アルキル基、置換基を有していてもよいアリール基、アリールアミノ基を示す。また、前記式ＩＲＨ−２、ＩＲＨ−３中、Ｒ_１〜Ｒ_４は、それぞれ独立に、水素原子、アルキル基、置換基を有していてもよいアリール基、アリールアミノ基を示す。また、Ｒ_１〜Ｒ_４は、互いに同じであっても異なっていてもよい。］

[In the formula IRH-1, n represents a natural number of 1 to 12, R represents a substituent or a functional group, and each independently represents a hydrogen atom, an alkyl group, or an aryl group optionally having a substituent. Represents an arylamino group. Moreover, R < ₁ > -R < ₄ > shows the aryl group and arylamino group which may have a hydrogen atom, an alkyl group, and a substituent each independently in said Formula IRH-2 and IRH-3. R _{1 to} R ₄ may be the same as or different from each other. ]

The tetracene-based material is preferably composed of carbon atoms and hydrogen atoms. Thereby, it is possible to prevent unintended interaction between the host material and the light emitting material. Therefore, the light emission efficiency of the light emitting element 1 can be increased. In addition, the resistance of the host material to potential and holes can be increased. Therefore, the lifetime of the light emitting element 1 can be extended.
Specifically, as the tetracene-based material, for example, compounds represented by the following formulas H1-1 to H1-11 and compounds represented by the following formulas H1-12 to H1-27 are preferably used.

  The anthracene-based material is not particularly limited as long as it has at least one anthracene skeleton in one molecule and can exhibit the function as the host material as described above. It is preferable to use a compound represented by the formula IRH-4 or a derivative thereof, and it is more preferable to use a compound represented by the following formulas IRH5 to IRH-8.

［前記式ＩＲＨ−４中、ｎは、１〜１０の自然数を示し、Ｒは置換基または官能基を表し、それぞれ独立に、水素原子、アルキル基、置換基を有していてもよいアリール基、アリールアミノ基を示す。また、前記式ＩＲＨ−５〜ＩＲＨ−８中、Ｒ_１、Ｒ_２は、それぞれ独立に、水素原子、アルキル基、置換基を有していてもよいアリール基、アリールアミノ基を示す。また、Ｒ_１、Ｒ_２は、互いに同じであっても異なっていてもよい。］

[In the formula IRH-4, n represents a natural number of 1 to 10, R represents a substituent or a functional group, and each independently represents a hydrogen atom, an alkyl group, or an aryl group optionally having a substituent. Represents an arylamino group. Moreover, R < ₁ >, R < ₂ > shows the aryl group and arylamino group which may have a hydrogen atom, an alkyl group, and a substituent each independently in said Formula IRH-5-IRH-8. R ₁ and R ₂ may be the same as or different from each other. ]

The anthracene-based material is preferably composed of carbon atoms and hydrogen atoms. Thereby, it is possible to prevent unintended interaction between the host material and the light emitting material. Therefore, the light emission efficiency of the light emitting element 1 can be increased. In addition, the resistance of the host material to potential and holes can be increased. Therefore, the lifetime of the light emitting element 1 can be extended.
Specifically, examples of the anthracene-based material include compounds represented by the following formulas H2-1 to H2-16, compounds represented by the following formulas H2-21 to H2-40, and formulas H2-51 to H2- It is preferable to use a compound represented by 70.

Note that the content (dope amount) of the light emitting material in the infrared light emitting layer 6 including such a light emitting material and a host material is preferably 0.01 to 10 wt%, and preferably 0.1 to 5 wt%. Is more preferable. Luminous efficiency can be optimized by setting the content of the light emitting material within such a range.
Moreover, although the average thickness of the infrared light emitting layer 6 is not specifically limited, It is preferable that it is about 1-60 nm, and it is more preferable that it is about 3-50 nm.

[Red light emitting layer]
The red light emitting layer 7R emits red light as emitted light (visible light) when energized between the anode 3 and the cathode 11 described above.
The red light emitting layer 7R includes a red light emitting material that emits red light.
Such a red light emitting material is not particularly limited, and various red fluorescent materials and red phosphorescent materials can be used singly or in combination.

  The red fluorescent material is not particularly limited as long as it emits red fluorescence. For example, perylene derivatives such as a compound represented by the following chemical formula (17) (diindenoperylene derivative), europium complexes, benzopyran derivatives, rhodamine Derivatives, benzothioxanthene derivatives, porphyrin derivatives, Nile red, 2- (1,1-dimethylethyl) -6- (2- (2,3,6,7-tetrahydro-1,1,7,7-tetramethyl) -1H, 5H-benzo (ij) quinolizin-9-yl) ethenyl) -4H-pyran-4H-ylidene) propanedinitrile (DCJTB), 4- (dicyanomethylene) -2-methyl-6- (p-dimethyl) Aminostyryl) -4H-pyran (DCM) and the like.

Among these, it is preferable to use a diindenoperylene derivative as the red light emitting material. Thereby, the red light emitting layer 7R can emit red light with higher luminance.
The red phosphorescent material is not particularly limited as long as it emits red phosphorescence, and examples thereof include metal complexes such as iridium, ruthenium, platinum, osmium, rhenium, and palladium. Among the ligands of these metal complexes, And those having at least one of phenylpyridine skeleton, bipyridyl skeleton, porphyrin skeleton and the like. More specifically, tris (1-phenylisoquinoline) iridium, bis [2- (2′-benzo [4,5-α] thienyl) pyridinate-N, C ³ ′] iridium (acetylacetonate) (btp2Ir ( acac)), 2,3,7,8,12,13,17,18-octaethyl-12H, 23H-porphyrin-platinum (II), bis [2- (2′-benzo [4,5-α] thienyl ) Pyridinate-N, C ³ '] iridium, bis (2-phenylpyridine) iridium (acetylacetonate).

In addition to the red light emitting material described above, the red light emitting layer 7R preferably contains a host material that uses the red light emitting material as a guest material.
As the host material, the same materials as described as the host material included in the infrared light emitting layer 6 can be used.
When the infrared light emitting layer 6 and the red light emitting layer 7R are adjacent to each other as in the present embodiment, it is preferable that the infrared light emitting layer 6 is positioned on the anode 3 side. Thereby, the light extraction efficiency in each of the light emitting layers 6 and 7R can be improved.

  Further, in this case, the host material of the red light emitting layer 7 </ b> R is preferably the same as the host material of the infrared light emitting layer 6. As a result, no band gap is generated between the light emitting layers 6 and 7R, so that infrared light and red light can be emitted in a balanced manner without causing an increase in voltage. That is, even if the light emitting layers 6 and 7R are adjacent to each other, both infrared light and red light can be emitted with a good balance.

[First intermediate layer]
The first intermediate layer 8A is provided between the red light emitting layer 7R and the blue light emitting layer 7B so as to be in contact therewith, and carriers (holes and electrons) between the red light emitting layer 7R and the blue light emitting layer 7B. It has a function to adjust movement. With this function, the red light emitting layer 7R and the blue light emitting layer 7B can each emit light efficiently.

The first intermediate layer 8A may have any configuration as long as it has a function of adjusting the movement of carriers (holes and electrons), and in particular, the red light emitting layer 7R described above. It is preferable that the material includes the same or the same material as the host material and is substantially free of a light emitting material.
As such a constituent material of the first intermediate layer 8A, for example, a material containing an acene-based material is preferably used as described as the host material of the red light emitting layer 7R.

  By using such a material, the energy rank of the highest occupied orbit (HOMO) of the first intermediate layer 8A is set lower than the energy rank of the highest occupied orbit (HOMO) of both the red light emitting layer 7R and the blue light emitting layer 7B. Furthermore, the energy rank of the lowest empty orbit (LUMO) of the first intermediate layer 8A is set higher than the energy rank of the lowest empty orbit (LUMO) of both the red light emitting layer 7R and the blue light emitting layer 7B. be able to. As a result, the exciton energy transfer between the red light emitting layer 7R and the blue light emitting layer 7B is more reliably prevented.

  The acene-based material is not particularly limited as long as it has an acene skeleton and exhibits the effects described above. For example, a naphthalene derivative, anthracene derivative, tetracene (naphthacene) derivative, pentacene derivative, hexacene Derivatives, heptacene derivatives and the like can be mentioned, and one or more of these can be used in combination, but it is preferable to use a tetracene (naphthacene) derivative.

Although it does not specifically limit as a tetracene (naphthacene) derivative, The thing similar to the naphthacene derivative demonstrated with the host material of the infrared rays light emitting layer 6 mentioned above can be used.
Such naphthacene derivatives are bipolar. Therefore, the first intermediate layer 8A can smoothly transport holes from the red light emitting layer 7R to the blue light emitting layer 7B, and can smoothly transport electrons from the blue light emitting layer 7B to the red light emitting layer 7R. The first intermediate layer 8A has excellent resistance to electrons and holes. Therefore, the deterioration of the first intermediate layer 8A can be prevented, and as a result, the durability of the light emitting element 1 can be improved.

The content of the acene-based material in the first intermediate layer 8A is not particularly limited, but is preferably 10 to 90 wt%, more preferably 30 to 70 wt%, and 40 to 60 wt%. Is more preferable.
Furthermore, as a constituent material of the first intermediate layer 8A, it is particularly preferable to include an amine material (amine derivative) in addition to the acene material described above.

  An amine-based material (that is, a material having an amine skeleton) is excellent in hole transporting property, and the above-described acene-based material (that is, a material having an acene skeleton) is excellent in electron transporting property. Thereby, the first intermediate layer 8A has both electron transport properties and hole transport properties. That is, the first intermediate layer 8A has a bipolar property. Thus, when the first intermediate layer 8A is bipolar, holes are smoothly transferred from the red light emitting layer 7R to the blue light emitting layer 7B via the first intermediate layer 8A, and from the blue light emitting layer 7B to the first intermediate layer 8B. Electrons can be smoothly transferred to the red light emitting layer 7R through the layer 8A. As a result, electrons and holes can be efficiently injected into the red light emitting layer 7R and the blue light emitting layer 7B to emit light.

In addition, since the first intermediate layer 8A has bipolar properties, it has excellent resistance to carriers (electrons and holes). In addition, since the acene-based material is excellent in exciton resistance, even if electrons and holes are recombined in the first intermediate layer 8A to generate excitons, the first intermediate layer 8A is deteriorated. Can be prevented or suppressed. Thereby, deterioration due to excitons of the first intermediate layer 8A can be prevented or suppressed, and as a result, the durability of the light-emitting element 1 can be improved.
The amine-based material used for the first intermediate layer 8A is not particularly limited as long as it has an amine skeleton and exhibits the effects as described above. Of the materials, materials having an amine skeleton can be used, but benzidine-based amine derivatives are preferably used.

  Particularly, among the benzidine-based amine derivatives, the amine-based material used for the first intermediate layer 8A is preferably a material into which two or more naphthyl groups are introduced. Examples of such benzidine-based amine derivatives include N, N′-bis (1-naphthyl) -N, N′-diphenyl [1,1′-biphenyl]-represented by the following chemical formula (22). Examples include 4,4′-diamine (α-NPD) and N, N, N ′, N′-tetranaphthyl-benzidine (TNB) represented by the following chemical formula (23).

Such amine-based materials are generally excellent in hole transport properties, and the hole mobility of amine-based materials is higher than the hole mobility of acene-based materials described later. Therefore, holes can be smoothly transferred from the red light emitting layer 7R to the blue light emitting layer 7B through the first intermediate layer 8A.
The content of the amine-based material in the first intermediate layer 8A is not particularly limited, but is preferably 10 to 90 wt%, more preferably 30 to 70 wt%, and 40 to 60 wt%. Is more preferable.

Further, the average thickness of the first intermediate layer 8A is not particularly limited, but is preferably 1 to 100 nm, more preferably 3 to 50 nm, and further preferably 5 to 30 nm. Thereby, the first intermediate layer 8A can reliably adjust the movement of holes and electrons between the red light emitting layer 7R and the blue light emitting layer 7B while suppressing the driving voltage.
On the other hand, when the average thickness of the first intermediate layer 8A exceeds the upper limit, depending on the constituent material of the first intermediate layer 8A, the driving voltage may be significantly increased, or the light emission of the light emitting element 1 (especially white light emission). ) May be difficult. On the other hand, if the average thickness of the first intermediate layer 8A is less than the lower limit value, the first intermediate layer 8A may have the red light emitting layer 7R and the blue light emitting layer 7B depending on the constituent material of the first intermediate layer 8A, the driving voltage, and the like. It may be difficult to reliably adjust the movement of holes and electrons between them.

[Blue light-emitting layer]
The blue light emitting layer 7B emits blue light as emitted light (visible light) when energized between the anode 3 and the cathode 11 described above.
The blue light emitting layer 7B includes a blue light emitting material that emits blue light.
Examples of such blue light-emitting materials include various blue fluorescent materials and blue phosphorescent materials, and one or more of these materials can be used in combination.

  The blue fluorescent material is not particularly limited as long as it emits blue fluorescence. For example, a styrylamine derivative such as a styrylamine compound represented by the following chemical formula (24A) or the following chemical formula (24B), a fluoranthene derivative, Pyrene derivatives, perylene and perylene derivatives, anthracene derivatives, benzoxazole derivatives, benzothiazole derivatives, benzimidazole derivatives, chrysene derivatives, phenanthrene derivatives, distyrylbenzene derivatives, tetraphenylbutadiene, 4,4′-bis (9-ethyl-3) -Carbazovinylene) -1,1'-biphenyl (BCzVBi), poly [(9.9-dioctylfluorene-2,7-diyl) -co- (2,5-dimethoxybenzene-1,4-diyl)], poly [(9,9-dihexyloxy Luolene-2,7-diyl) -ortho-co- (2-methoxy-5- {2-ethoxyhexyloxy} phenylene-1,4-diyl)], poly [(9,9-dioctylfluorene-2,7 -Diyl) -co- (ethylnylbenzene)] and the like.

The blue phosphorescent material is not particularly limited as long as it emits blue phosphorescence. Examples thereof include metal complexes such as iridium, ruthenium, platinum, osmium, rhenium, and palladium. Specifically, bis [4 , 6-difluorophenyl pyridinium sulfonate -N, ^{C 2} '] - picolinate - iridium, tris [2- (2,4-difluorophenyl) pyridinate -N, ^{C 2']} iridium, bis [2- (3,5 - trifluoromethyl) pyridinate -N, ^{C 2} '] - picolinate - iridium, bis (4,6-difluorophenyl pyridinium sulfonate -N, ^{C 2')} iridium (acetylacetonate) and the like.
In addition to the blue light-emitting material described above, the blue light-emitting layer 7B preferably contains a host material that uses a blue light-emitting material as a guest material.
As such a host material, the same materials as described as the host material included in the infrared light emitting layer 6 can be used.

[Green light-emitting layer]
The green light emitting layer 7G emits green light as emitted light (visible light) when energized between the anode 3 and the cathode 11 described above.
The green light emitting layer 7G includes a green light emitting material that emits green light.
Such a green light emitting material is not particularly limited, and various green fluorescent materials and green phosphorescent materials can be used singly or in combination.

  The green fluorescent material is not particularly limited as long as it emits green fluorescence. For example, a coumarin derivative, a quinacridone such as a quinacridone derivative represented by the following chemical formula (25) and a derivative thereof, 9,10-bis [(9- Ethyl-3-carbazole) -vinylenyl] -anthracene, poly (9,9-dihexyl-2,7-vinylenefluorenylene), poly [(9,9-dioctylfluorene-2,7-diyl) -co- ( 1,4-diphenylene-vinylene-2-methoxy-5- {2-ethylhexyloxy} benzene)], poly [(9,9-dioctyl-2,7-divinylenefluorenylene) -ortho-co- (2 -Methoxy-5- (2-ethoxylhexyloxy) -1,4-phenylene)] and the like.

The green phosphorescent material is not particularly limited as long as it emits green phosphorescence, and examples thereof include metal complexes such as iridium, ruthenium, platinum, osmium, rhenium, and palladium. 2-phenylpyridine) iridium (Ir (ppy) 3), bis (2-phenyl-pyridinium sulfonate -N, ^{C 2} ') iridium (acetylacetonate), fac - tris [5-fluoro-2- (5-tri Fluoromethyl-2-pyridine) phenyl-C, N] iridium and the like.

The green light emitting layer 7G preferably contains a host material that uses the green light emitting material as a guest material in addition to the green light emitting material described above.
As the host material, the same materials as described as the host material included in the infrared light emitting layer 6 can be used.
Moreover, it is preferable to use an acene derivative (acene-based material) as the host material of the green light emitting layer 7G like the host material of the red light emitting layer 6. Thereby, the green light emitting layer 7G can emit red light with higher luminance and higher efficiency.
Further, the host material of the green light emitting layer 7G is preferably the same as the host material of the blue light emitting layer 8 described above. As a result, no band gap is generated between the light emitting layers 8 and 9, so that green light and blue light can be emitted in a balanced manner.

[Electron transport layer]
The electron transport layer 9 has a function of transporting electrons injected from the cathode 11 through the electron injection layer 10 to the green light emitting layer 7G.
Examples of the constituent material (electron transport material) of the electron transport layer 9 include phenanthroline derivatives such as 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), and tris (8-quinolinolato) aluminum. Quinoline derivatives such as organometallic complexes having 8-quinolinol or its derivatives such as (Alq ₃ ) as a ligand, azaindolizine derivatives, oxadiazole derivatives, perylene derivatives, pyridine derivatives, pyrimidine derivatives, quinoxaline derivatives, diphenyl A quinone derivative, a nitro substituted fluorene derivative, etc. are mentioned, Among these, it can use combining 1 type (s) or 2 or more types.

Among these, it is preferable to use an azaindolizine derivative as the electron transporting material used for the electron transporting layer 9, and in particular, a compound having an azaindolizine skeleton and an anthracene skeleton in the molecule (hereinafter simply referred to as “azaindolizine”). It is more preferable to use a "compound".
As described above, since the compound having an azaindolizine skeleton and an anthracene skeleton in the molecule is used as the electron transport material of the electron transport layer 9 adjacent to the green light-emitting layer 7G, the electron transport layer 9 to the green light-emitting layer 7G. Electrons can be transported efficiently. Therefore, the light emission efficiency of the light emitting element 1 can be improved.

In addition, since the electron transport from the electron transport layer 9 to the green light emitting layer 7G can be efficiently performed, the driving voltage of the light emitting element 1 can be lowered, and accordingly, the life of the light emitting element 1 can be extended. Can be planned.
Furthermore, since a compound having an azaindolizine skeleton and an anthracene skeleton in a molecule is excellent in stability (resistance) against electrons and holes, the life of the light-emitting element 1 can also be extended in this respect.

The electron transporting material (azaindolizine compound) used for the electron transporting layer 9 preferably has one or two azaindolizine skeletons and anthracene skeletons in one molecule. Thereby, the electron transport property and the electron injection property of the electron transport layer 9 can be made excellent.
Specifically, examples of the azaindolizine compound used for the electron transport layer 9 include compounds represented by the following formulas ELT-A1 to ELT-A24, and formulas ELT-B1 to ELT-B12. It is preferable to use such a compound and the compounds represented by the following ELT-C1 to ELT-C20.

Such an azaindolizine compound is excellent in electron transport property and electron injection property. Therefore, the light emission efficiency of the light emitting element 1 can be improved.
The reason why the electron transport property and electron injection property of the azaindolizine compound is excellent is considered as follows.
In the azaindolizine-based compound having an azaindolizine skeleton and an anthracene skeleton in the molecule as described above, the entire molecule is connected by a π-conjugated system, and therefore the electron cloud spreads over the entire molecule.

  The azaindolizine skeleton portion of the azaindolizine compound has a function of accepting electrons and a function of sending the received electrons to the anthracene skeleton portion. On the other hand, the anthracene skeleton portion of the azaindolizine compound has a function of accepting electrons from the azaindolizine skeleton portion, and the received electrons are adjacent to the anode 3 side of the electron transport layer 9, that is, green light emission. And a function of passing to the layer 7G6.

  Specifically, the azaindolizine skeleton portion of the azaindolizine compound has two nitrogen atoms, and one of the nitrogen atoms (on the side close to the anthracene skeleton portion) has an sp2 hybrid orbital. The nitrogen atom on the other side (the side far from the anthracene skeleton portion) has an sp3 hybrid orbital. Nitrogen atom having sp2 hybrid orbital constitutes part of the conjugated system of azaindolizine compound molecule, and has higher electronegativity than carbon atom, and has higher strength to attract electrons. Function as. On the other hand, a nitrogen atom having an sp3 hybrid orbital is not a normal conjugated system, but has an unshared electron pair, so that the electron functions as a part that sends electrons toward the conjugated system of the molecule of the azaindolizine compound. .

  On the other hand, since the anthracene skeleton portion of the azaindolizine compound is electrically neutral, electrons can be easily accepted from the azaindolizine skeleton portion. In addition, since the anthracene skeleton portion of the azaindolizine compound has a large orbital overlap with the constituent material of the green light emitting layer 7G, particularly the host material (acene material), electrons are easily transferred to the host material of the green light emitting layer 7G. Can be handed over to.

In addition, since the azaindolizine-based compound is excellent in the electron transporting property and the electron injecting property as described above, the driving voltage of the light emitting element 1 can be lowered as a result.
The azaindolizine skeleton portion is stable even when a nitrogen atom having an sp2 hybrid orbital is reduced, and is stable even if a nitrogen atom having an sp3 hybrid orbital is oxidized. Therefore, such an azaindolizine compound has high stability against electrons and holes. As a result, the lifetime of the light emitting element 1 can be extended.

Moreover, when using 2 or more types of electron transport materials in combination as mentioned above, the electron transport layer 9 may be comprised with the mixed material which mixed 2 or more types of electron transport materials, and is different. You may be comprised by laminating | stacking the some layer comprised with the electron transport material.
Although the average thickness of the electron carrying layer 9 is not specifically limited, It is preferable that it is about 1.0-200 nm, and it is more preferable that it is about 10-100 nm.

[Electron injection layer]
The electron injection layer 10 has a function of improving the electron injection efficiency from the cathode 11.
Examples of the constituent material (electron injectable material) of the electron injection layer 10 include various inorganic insulating materials and various inorganic semiconductor materials.

  Examples of such inorganic insulating materials include alkali metal chalcogenides (oxides, sulfides, selenides, tellurides), alkaline earth metal chalcogenides, alkali metal halides, and alkaline earth metal halides. Of these, one or two or more of these can be used in combination. By configuring the electron injection layer 10 using these as main materials, the electron injection property can be further improved. In particular, an alkali metal compound (alkali metal chalcogenide, alkali metal halide, etc.) has a very small work function, and the light-emitting element 1 can have high luminance by forming the electron injection layer 10 using the work function. Become.

Examples of the alkali metal chalcogenide include Li ₂ O, LiO, Na ₂ S, Na ₂ Se, and NaO.
Examples of the alkaline earth metal chalcogenide include CaO, BaO, SrO, BeO, BaS, MgO, and CaSe.
Examples of the alkali metal halide include CsF, LiF, NaF, KF, LiCl, KCl, and NaCl.
Examples of the alkaline earth metal halide include CaF ₂ , BaF ₂ , SrF ₂ , MgF ₂ , and BeF ₂ .

In addition, as the inorganic semiconductor material, for example, an oxide including at least one element of Li, Na, Ba, Ca, Sr, Yb, Al, Ga, In, Cd, Mg, Si, Ta, Sb, and Zn , Nitrides, oxynitrides, and the like, and one or more of these can be used in combination.
The average thickness of the electron injection layer 10 is not particularly limited, but is preferably about 0.1 to 1000 nm, more preferably about 0.2 to 100 nm, and about 0.2 to 50 nm. Further preferred.
The electron injection layer 10 may be omitted depending on the constituent materials and thicknesses of the cathode 11 and the electron transport layer 9.

[Sealing member]
The sealing member 12 is provided so as to cover the anode 3, the laminated body 14, and the cathode 11, and has a function of hermetically sealing them and blocking oxygen and moisture. By providing the sealing member 12, effects such as improvement in reliability of the light emitting element 1 and prevention of deterioration / deterioration (improvement in durability) are obtained.

  Examples of the constituent material of the sealing member 12 include Al, Au, Cr, Nb, Ta, Ti, alloys containing these, silicon oxide, various resin materials, and the like. In addition, when using the material which has electroconductivity as a constituent material of the sealing member 12, in order to prevent a short circuit, between the sealing member 12, the anode 3, the laminated body 14, and the cathode 11, it is required. Accordingly, an insulating film is preferably provided.

Further, the sealing member 12 may be formed in a flat plate shape so as to face the substrate 2 and be sealed with a sealing material such as a thermosetting resin.
According to the light-emitting element 1 configured as described above, a thiadiazole-based compound is used as the light-emitting material of the infrared light-emitting layer 6, and a tetracene-based material is used as the host material of the infrared light-emitting layer 6. Light emission is possible, and high efficiency and long life can be achieved.
The above light emitting element 1 can be manufactured as follows, for example.

[1] First, the substrate 2 is prepared, and the anode 3 is formed on the substrate 2.
The anode 3 is, for example, a chemical vapor deposition method (CVD) such as plasma CVD or thermal CVD, a dry plating method such as vacuum deposition, a wet plating method such as electrolytic plating, a thermal spraying method, a sol-gel method, a MOD method, or a metal foil. It can be formed by using, for example, bonding.
[2] Next, the hole injection layer 4 is formed on the anode 3.
The hole injection layer 4 is preferably formed by, for example, a vapor phase process using a CVD method, a dry plating method such as vacuum deposition or sputtering, or the like.

For example, the hole injection layer 4 may be dried (desolvent or solvent-free) after supplying a material for forming a hole injection layer obtained by dissolving a hole injection material in a solvent or dispersing in a dispersion medium onto the anode 3. It can also be formed by dedispersing medium).
As a method for supplying the hole injection layer forming material, for example, various coating methods such as a spin coating method, a roll coating method, and an ink jet printing method can be used. By using such a coating method, the hole injection layer 4 can be formed relatively easily.
Examples of the solvent or dispersion medium used for the preparation of the hole injection layer forming material include various inorganic solvents, various organic solvents, or mixed solvents containing these.

The drying can be performed, for example, by standing in an atmospheric pressure or a reduced pressure atmosphere, heat treatment, or blowing an inert gas.
Prior to this step, the upper surface of the anode 3 may be subjected to oxygen plasma treatment. Thereby, it is possible to impart lyophilicity to the upper surface of the anode 3, remove (clean) organic substances adhering to the upper surface of the anode 3, adjust the work function near the upper surface of the anode 3, and the like. .
Here, the oxygen plasma treatment conditions include, for example, a plasma power of about 100 to 800 W, an oxygen gas flow rate of about 50 to 100 mL / min, a conveyance speed of the member to be treated (anode 3) of about 0.5 to 10 mm / sec, and a substrate. The temperature of 2 is preferably about 70 to 90 ° C.

[3] Next, the hole transport layer 5 is formed on the hole injection layer 4.
The hole transport layer 5 is preferably formed by a vapor phase process using, for example, a CVD method, a dry plating method such as vacuum evaporation or sputtering.
In addition, a hole transport layer forming material obtained by dissolving a hole transport material in a solvent or dispersing in a dispersion medium is supplied onto the hole injection layer 4 and then dried (desolvent or dedispersion medium). Can also be formed.

[4] Next, the infrared light emitting layer 6 is formed on the hole transport layer 5.
The infrared light emitting layer 6 can be formed, for example, by a vapor phase process using a dry plating method such as vacuum deposition.
[5] Next, the red light emitting layer 7 </ b> R is formed on the infrared light emitting layer 6.
The red light emitting layer 7R can be formed by, for example, a vapor phase process using a CVD method, a dry plating method such as vacuum deposition, sputtering, or the like.

[6] Next, the first intermediate layer 8A is formed on the red light emitting layer 7R.
The first intermediate layer 8A can be formed by, for example, a vapor phase process using a CVD method, a dry plating method such as vacuum deposition or sputtering, or the like.
For example, the first intermediate layer 8A is supplied with a first intermediate layer forming material obtained by dissolving the constituent material in a solvent or dispersed in a dispersion medium on the red light emitting layer 7R, and then dried (desolvent or It can also be formed by dedispersing medium).

[7] Next, the blue light emitting layer 7B is formed on the first intermediate layer 8A.
The blue light emitting layer 7B can be formed by, for example, a vapor phase process using a CVD method, a dry plating method such as vacuum deposition or sputtering, or the like.
[8] Next, the green light emitting layer 7G is formed on the blue light emitting layer 7B.
The green light emitting layer 7G can be formed by, for example, a vapor phase process using a CVD method, a dry plating method such as vacuum deposition or sputtering, or the like.

[9] Next, the electron transport layer 9 is formed on the green light emitting layer 7G.
The electron transport layer 9 can be formed by, for example, a vapor phase process using a CVD method, a dry plating method such as vacuum deposition, sputtering, or the like.
In addition, the electron transport layer 9 is dried (desolvent or dedispersed) after supplying an electron transport layer forming material obtained by, for example, dissolving an electron transport material in a solvent or dispersing in a dispersion medium onto the green light emitting layer 7G. It can also be formed by the medium.

[10] Next, the electron injection layer 10 is formed on the electron transport layer 9.
When an inorganic material is used as the constituent material of the electron injection layer 10, the electron injection layer 10 is formed by, for example, a vapor phase process using a CVD method, a dry plating method such as vacuum vapor deposition or sputtering, and application and baking of inorganic fine particle ink. Etc. can be used.
[11] Next, the cathode 11 is formed on the electron injection layer 10.
The cathode 11 can be formed by using, for example, a vacuum deposition method, a sputtering method, bonding of metal foil, application and firing of metal fine particle ink, or the like.
The light emitting element 1 is obtained through the steps as described above.
Finally, the sealing member 12 is placed so as to cover the obtained light emitting element 1 and bonded to the substrate 2.

Second Embodiment
FIG. 2 is a cross-sectional view schematically showing a second embodiment of the light emitting device of the present invention.
Hereinafter, the light emitting device of the second embodiment will be described focusing on the differences from the first embodiment described above, and the description of the same matters will be omitted.
The light emitting element 1 of 2nd Embodiment differs in the position which laminates | stacks the infrared light emitting layer 6, and also is equipped with the 2nd intermediate | middle layer 8B between the infrared light emitting layer 6 and the green light emitting layer 7G in the lamination position. Is the same as the light emitting device of the first embodiment.

  That is, the light emitting device 1 shown in FIG. 2 includes an anode 3, a hole injection layer 4, a hole transport layer 5, a red light emitting layer 7R, a first intermediate layer 8A, a blue light emitting layer 7B, a green light emitting layer 7G, and a second intermediate. The layer 8B, the infrared light emitting layer 6, the electron transport layer 9, the electron injection layer 10, and the cathode 11 are laminated in this order. In other words, in the light emitting element 1, between the anode 3 and the cathode 11, from the anode 3 side to the cathode 11 side, the hole injection layer 4, the hole transport layer 5, the red light emitting layer 7R, the first intermediate layer 8A, A laminated body 14 in which a blue light emitting layer 7B, a green light emitting layer 7G, a second intermediate layer 8B, an infrared light emitting layer 6, an electron transport layer 9, and an electron injection layer 10 are laminated in this order is interposed.

The entire light emitting element 1 is provided on the substrate 2 and sealed with a sealing member 12.
In such a light emitting element 1, as in the light emitting element 1 of the first embodiment, the light emitting layers of the infrared light emitting layer 6, the red light emitting layer 7R, the blue light emitting layer 7B, and the green light emitting layer 7G are used. Electrons are supplied (injected) from the cathode 11 side, and holes are supplied (injected) from the anode 3 side. In each light emitting layer, holes and electrons recombine, and excitons (excitons) are generated by the energy released during the recombination, and energy (fluorescence or phosphorescence) is generated when the excitons return to the ground state. Release. Therefore, the infrared light emitting layer 6 emits infrared light, and the red light emitting layer 7R, the blue light emitting layer 7B, and the green light emitting layer 7G emit red, blue, and green visible light, respectively. Thereby, the light emitting element 1 of this embodiment also emits infrared rays and white visible light. In the present embodiment, the visible light emitting layer 7 that emits visible light is composed of the red light emitting layer 7R, the blue light emitting layer 7B, and the green light emitting layer 7G.

  In the present embodiment, since the light emitting element 1 includes the first intermediate layer 8A between the red light emitting layer 7R and the blue light emitting layer 7B, the light emitting element 1 is interposed between the red light emitting layer 7R and the blue light emitting layer 7B. Therefore, the exciton energy transfer between the red light emitting layer 7R and the blue light emitting layer 7B can be prevented. As a result, the red light-emitting layer 7R and the blue light-emitting layer 7B emit light in a balanced manner, and the light-emitting element 1 emits white light more reliably as visible light.

  Furthermore, in this embodiment, since the light emitting element 1 has the second intermediate layer 8B between the green light emitting layer 7G and the infrared light emitting layer 6, between the green light emitting layer 7G and the infrared light emitting layer 6. Therefore, the exciton energy transfer between the green light emitting layer 7G and the infrared light emitting layer 6 can be prevented. As a result, the green light emitting layer 7G and the infrared light emitting layer 6 emit light in a balanced manner, and the light emitting element 1 emits white light more reliably as visible light and emits infrared light more reliably.

The infrared light emitting layer 6 emits infrared light as emitted light when energized between the anode 3 and the cathode 11.
The infrared light emitting layer 6 can have the same configuration as that of the infrared light emitting layer 6 included in the light emitting element 1 of the first embodiment described above. As the host material contained in the infrared light emitting layer 6, bis (2-methyl-8-quinolinolato) (p-phenylphenolato) aluminum (BAlq) is used when positioned on the cathode 11 side of the light emitting layers 7R, 7G, and 7B. It is preferable to use a quinolinolato metal complex such as tris (8-quinolinolato) aluminum complex (Alq ₃ ). Thereby, the lifetime of the infrared light emitting layer 6 can be extended.
Further, the second intermediate layer 8B can have the same configuration as the first intermediate layer 8A provided in the light emitting device 1 of the first embodiment described above.

<Third Embodiment>
FIG. 3 is a cross-sectional view schematically showing a third embodiment of the light emitting device of the present invention.
Hereinafter, the light emitting device of the third embodiment will be described focusing on the differences from the first embodiment described above, and the description of the same matters will be omitted.
The light emitting device 1 of the third embodiment omits the formation of the red light emitting layer 7R, the blue light emitting layer 7B, and the green light emitting layer 7G as the light emitting layer that emits visible light, and includes the yellow light emitting layer 7Y and the cyan light emitting layer 7C. Except for the formation, it is the same as the light emitting device of the first embodiment.

  That is, the light-emitting element 1 shown in FIG. 3 includes an anode 3, a hole injection layer 4, a hole transport layer 5, an infrared light-emitting layer 6, a first intermediate layer 8A, a yellow light-emitting layer 7Y, a cyan light-emitting layer 7C, and an electron transport layer. 9, the electron injection layer 10, and the cathode 11 are laminated in this order. In other words, in the light emitting element 1, between the anode 3 and the cathode 11, from the anode 3 side to the cathode 11 side, the hole injection layer 4, the hole transport layer 5, the infrared light emitting layer 6, and the first intermediate layer 8A. And a yellow light emitting layer 7Y, a cyan light emitting layer 7C, an electron transport layer 9, and an electron injection layer 10 are interposed in this order.

The entire light emitting element 1 is provided on the substrate 2 and sealed with a sealing member 12.
In such a light emitting element 1, electrons are supplied (injected) from the cathode 11 side to the light emitting layers of the infrared light emitting layer 6, the yellow light emitting layer 7Y, and the cyan light emitting layer 7C, and from the anode 3 side. Holes are supplied (injected). In each light emitting layer, holes and electrons recombine, and excitons (excitons) are generated by the energy released during the recombination, and energy (fluorescence or phosphorescence) is generated when the excitons return to the ground state. Release. Therefore, the infrared light emitting layer 6 emits infrared light, and the yellow light emitting layer 7Y and the cyan light emitting layer 7C emit yellow and cyan visible light, respectively. Thereby, the light emitting element 1 of this embodiment emits infrared rays and white visible light. In the present embodiment, the visible light emitting layer 7 that emits visible light is composed of the yellow light emitting layer 7Y and the cyan light emitting layer 7C.

[Yellow light emitting layer]
The yellow light emitting layer 7 </ b> Y emits yellow light as emitted light (visible light) when energized between the anode 3 and the cathode 11.
The yellow light emitting layer 7Y includes a yellow light emitting material that emits yellow light.
Such a yellow light-emitting material is not particularly limited, and various yellow fluorescent materials and yellow phosphorescent materials can be used alone or in combination of two or more.
The yellow fluorescent material is not particularly limited as long as it emits yellow fluorescence. Examples thereof include tetracene compounds represented by the following chemical formula (26A), tetraphenylnaphthacene (common name: rubrene), and the like. One or two or more of them can be used in combination.

  The yellow phosphorescent material is not particularly limited as long as it emits yellow phosphorescence, and examples thereof include tris (2-phenylquinoline) iridium (III) represented by the following formula (26B).

[Cyan emission layer]
The cyan light emitting layer 7 </ b> C emits cyan light as emitted light (visible light) when energized between the anode 3 and the cathode 11.
The cyan light emitting layer 7C includes a cyan light emitting material that emits cyan.
Such a cyan light emitting material is not particularly limited, and various cyan fluorescent materials and cyan phosphorescent materials can be used singly or in combination.

The cyan fluorescent material is not particularly limited as long as it emits cyan fluorescence. For example, a styrylamine derivative such as a styrylamine compound represented by the chemical formula (24A), 4,4′-bisdiphenylamino-distilbene. These can be used, and one or more of these can be used in combination.
The cyan phosphorescent material is not particularly limited as long as it emits cyan phosphorescence. For example, bis (3,5-difluoro-2- (2-pyridyl) phenyl) represented by the following formula (27) -(2-Carboxypyridyl) iridium (III) etc. are mentioned.

Further, in the yellow light emitting layer 7Y and the cyan light emitting layer 7C, in addition to the yellow light emitting material and the cyan light emitting material described above, host materials using the yellow light emitting material and the cyan light emitting material as guest materials are included, respectively. Is preferred.
In addition, as this host material, the thing similar to having demonstrated as the host material contained in the said infrared light emitting layer 6 can be used.

<Fourth embodiment>
FIG. 4 is a cross-sectional view schematically showing a fourth embodiment of the light emitting device of the present invention.
Hereinafter, the light emitting device of the fourth embodiment will be described focusing on differences from the above-described third embodiment, and description of similar matters will be omitted.
The light emitting device 1 of the fourth embodiment is different in the position where the infrared light emitting layer 6 is laminated, and further includes the first intermediate layer 8A between the infrared light emitting layer 6 and the cyan light emitting layer 7C at the laminated position. Is the same as the light emitting device of the third embodiment.

That is, the light-emitting element 1 shown in FIG. 4 includes an anode 3, a hole injection layer 4, a hole transport layer 5, a yellow light-emitting layer 7Y, a cyan light-emitting layer 7C, a first intermediate layer 8A, an infrared light-emitting layer 6, and an electron transport layer. 9, the electron injection layer 10, and the cathode 11 are laminated in this order. In other words, in the light emitting element 1, between the anode 3 and the cathode 11, from the anode 3 side to the cathode 11 side, the hole injection layer 4, the hole transport layer 5, the yellow light emitting layer 7Y, and the cyan light emitting layer 7C A laminate 14 in which the first intermediate layer 8A, the infrared light emitting layer 6, the electron transport layer 9, and the electron injection layer 10 are laminated in this order is interposed.
The entire light emitting element 1 is provided on the substrate 2 and sealed with a sealing member 12.

  In such a light-emitting element 1, as in the light-emitting element 1 of the third embodiment, electrons are emitted from the cathode 11 side to the light-emitting layers of the infrared light-emitting layer 6, the yellow light-emitting layer 7Y, and the cyan light-emitting layer 7C. Are supplied (injected) and holes are supplied (injected) from the anode 3 side. In each light emitting layer, holes and electrons recombine, and excitons (excitons) are generated by the energy released during the recombination, and energy (fluorescence or phosphorescence) is generated when the excitons return to the ground state. Release. Therefore, the infrared light emitting layer 6 emits infrared light, and the yellow light emitting layer 7Y and the cyan light emitting layer 7C emit yellow and cyan visible light, respectively. Thereby, the light emitting element 1 of this embodiment emits infrared rays and white visible light. In the present embodiment, the visible light emitting layer 7 that emits visible light is composed of the yellow light emitting layer 7Y and the cyan light emitting layer 7C.

  In the present embodiment, since the light emitting element 1 includes the first intermediate layer 8A between the cyan light emitting layer 7C and the infrared light emitting layer 6, between the cyan light emitting layer 7C and the infrared light emitting layer 6. Therefore, the exciton energy transfer between the cyan light emitting layer 7C and the infrared light emitting layer 6 can be prevented. As a result, the cyan light emitting layer 7C and the infrared light emitting layer 6 emit light in a balanced manner, and the light emitting element 1 emits white light more reliably as visible light and emits infrared light more reliably.

The infrared light emitting layer 6 emits infrared light as emitted light when energized between the anode 3 and the cathode 11.
The infrared light emitting layer 6 can have the same configuration as that of the infrared light emitting layer 6 included in the light emitting element 1 of the third embodiment described above. As the host material contained in the infrared light emitting layer 6, bis (2-methyl-8-quinolinolato) (p-phenylphenolato) aluminum (BAlq), tris It is preferable to use a quinolinolato-based metal complex such as (8-quinolinolato) aluminum complex (Alq ₃ ). Thereby, the lifetime of the infrared light emitting layer 6 can be extended.

<Fifth Embodiment>
FIG. 5 is a cross-sectional view schematically showing a fifth embodiment of the light emitting device of the present invention.
Hereinafter, the light emitting device of the fifth embodiment will be described focusing on the differences from the third embodiment described above, and description of similar matters will be omitted.
The light-emitting element 1 of the fifth embodiment is the same as the light-emitting layer that emits visible light, except that the red light-emitting layer 7R and the blue light-emitting layer 7B are omitted and the green light-emitting layer 7G is formed alone. It is the same as that of the light emitting element of 1 embodiment.

  That is, the light emitting device 1 shown in FIG. 5 includes an anode 3, a hole injection layer 4, a hole transport layer 5, an infrared light emission layer 6, a first intermediate layer 8A, a green light emission layer 7G, an electron transport layer 9, and an electron injection layer. 10 and the cathode 11 are laminated in this order. In other words, in the light emitting element 1, between the anode 3 and the cathode 11, from the anode 3 side to the cathode 11 side, the hole injection layer 4, the hole transport layer 5, the infrared light emitting layer 6, and the first intermediate layer 8A. , Green light emitting layer 7G, electron transport layer 9, and electron injection layer 10 are stacked in this order.

The entire light emitting element 1 is provided on the substrate 2 and sealed with a sealing member 12.
In such a light emitting element 1, electrons are supplied (injected) from the cathode 11 side and holes are supplied from the anode 3 side to the light emitting layers of the infrared light emitting layer 6 and the green light emitting layer 7G ( Injected). In each light emitting layer, holes and electrons recombine, and excitons (excitons) are generated by the energy released during the recombination, and energy (fluorescence or phosphorescence) is generated when the excitons return to the ground state. Release. Therefore, the infrared light emitting layer 6 emits infrared light, and the green light emitting layer 7G emits green visible light. That is, the light emitting element 1 of the present embodiment emits infrared rays and green visible light. In the present embodiment, the visible light emitting layer 7 that emits visible light is configured by one layer of the green light emitting layer 7G.

  Moreover, in this embodiment, since the light emitting element 1 has the 1st intermediate | middle layer 8A between the infrared light emitting layer 6 and the green light emitting layer 7G, between the infrared light emitting layer 6 and the green light emitting layer 7G. Therefore, the exciton energy transfer between the infrared light emitting layer 6 and the green light emitting layer 7G can be prevented. As a result, the infrared light emitting layer 6 and the green light emitting layer 7G emit light with a good balance, and the light emitting element 1 emits green light more reliably as visible light. Such an effect can be significantly obtained when the green light emitting layer 7G contains a green phosphorescent material as a light emitting material. That is, by inhibiting the exciton energy transfer between the infrared light emitting layer 6 and the green light emitting layer 7G, the deactivation of triplet excitons generated in the green phosphorescent material can be reliably prevented.

Next, a light emitting device (the light emitting device of the present invention) including the above-described light emitting element of the present invention will be described.
(Light source for lighting)
First, the case where the light-emitting device of the present invention is applied to an illumination light source will be described.
FIG. 6 is a diagram showing an embodiment of an illumination light source according to the present invention.

An illumination light source 200 shown in FIG. 6 is a light source used for illumination, particularly for illuminating indoors.
The illumination light source 200 includes a transparent substrate 205 and the light emitting element 1.
The light-emitting element 1 includes a transparent electrode 202, a counter electrode 203, and a stacked body 201. By applying an electric field between the transparent electrode 202 and the counter electrode 203, the light emitting layer included in the stacked body 201 emits light. To do. Then, the emitted light generated in the light emitting layer passes through the transparent substrate 205, so that, for example, the interior is illuminated.

In the present embodiment, the light emitting element 1 included in the illumination light source 200 emits near-infrared infrared light and white visible light. That is, the illumination light source 200 includes the light emitting element 1 having the configuration described in the first to fourth embodiments.
Here, in an ordinary light source for indoor illumination, for example, a fluorescent lamp, the emission wavelength is approximately 400 to 700 nm, which is an emission wavelength having near-infrared emission like sunlight. Absent.

On the other hand, the light receiving wavelength of a light receiving element (CCD, CMOS, etc.) provided in the digital camera is about 1100 nm. Thus, the light receiving element has sensitivity to wavelengths in the near infrared region (700 to 1100 nm).
For this reason, there is a problem that when the image is taken indoors and outdoors using a digital camera, there is a subtle difference in image quality.

In order to solve such a problem, the illumination light source 200 emits near-infrared infrared light and white visible light as emitted light.
As described above, since not only visible light but also light in the near infrared region is emitted, it is possible to obtain almost the same image as that in outdoor shooting even in indoor shooting.
Moreover, since the illumination light source 200 includes the light-emitting element 1 with high efficiency and long life, the illumination light source 200 is excellent in reliability.

(Skin diagnostic device)
Next, the case where the light-emitting device of this invention is applied to a skin diagnostic apparatus is demonstrated.
FIG. 7 is a diagram showing an embodiment of the skin diagnostic apparatus of the present invention.
A skin diagnostic apparatus 300 shown in FIG. 7 is a skin diagnostic apparatus that can accurately grasp the state based on the measurement result of the skin state.

The skin diagnostic apparatus 300 includes a first measurement probe 302, a second measurement probe 303, a keyboard 304, a calculation unit 305, a calculation unit 305, a digital micro camera 306, and a display 307.
The first measurement probe 302 is for measuring the moisture content, sebum amount, elasticity and the like of the skin.

The second measurement probe 303 measures the skin tone, blood circulation state, melanin pigmentation state, and the like.
The keyboard 304 is input means for inputting a result of an inquiry from a subject or observation or palpation of the subject's skin.
The calculation means 305 calculates an evaluation index of the skin condition of the subject based on the measurement signal from the measurement probes 302 and 303 or the input result of the inquiry, observation or palpation.

The digital micro camera 306 is configured to be connectable via a USB terminal, includes a light source, and can capture an enlarged image of 20 to 150 times.
Further, the display 307 is for displaying the calculated skin condition evaluation index.
In the skin diagnostic apparatus 300 having such a configuration, the light source included in the digital micro camera 306 includes a plurality of the light emitting elements 1 described above, and infrared light in the near infrared region is directed toward the skin (skin) that is the imaging target. And white visible light.

That is, the light source includes a plurality of light emitting elements 1 having the configurations described in the first to fourth embodiments.
According to such a skin diagnostic apparatus 300, imaging by the digital micro camera 306 is performed using near-infrared infrared light and white visible light.
In this way, blood information can be obtained by imaging not only with visible light but also with infrared light in the near infrared region. That is, not only the state on the skin surface (for example, the amount of melanin pigment on the skin surface) but also the red blood cell index and hematocrit value can be obtained. Therefore, it becomes possible to measure the skin state taking into account the blood color.
Moreover, since the skin diagnostic apparatus 300 includes the light-emitting element 1 with high efficiency and long life, the skin diagnostic apparatus 300 is excellent in reliability.

(Pulse measuring device)
Next, a case where the light emitting device of the present invention is applied to a pulse measuring device will be described.
FIG. 8 is a diagram showing an embodiment of the pulse measuring device of the present invention.
A pulse measuring device 400 shown in FIG. 8 is a portable pulse measuring device that measures a pulse rate by attaching a sensor module to a finger.

The pulse measuring device 400 includes a sensor module 481, a device main body 482, and a wiring L that connects them.
The sensor module 481 includes a pulse wave sensor 483 that is attached to a measurer's finger and detects a pulse wave component.
The pulse wave sensor 483 has a light source 483A that emits detection light and a light receiving unit (Photo Detector) 483B that receives the detection light reflected by the human body (finger).

The apparatus main body 482 measures the pulse rate by extracting the pulse component based on the light reception result in the light receiving unit 483B, and displays the pulse rate as the measurement result on the display unit 497.
In the pulse measuring device 400 having such a configuration, the light source 483A includes the light-emitting element 1 described above, and irradiates near-infrared infrared light and green visible light toward the finger whose pulse is to be measured. To do.

That is, the light source 483A includes the light emitting element 1 having the configuration described in the fifth embodiment.
According to such a pulse measuring device 400, the detection light reflected by the finger is generated using the near-infrared infrared light and green visible light emitted from the light source 483A, and this detection is performed. The pulse is measured based on the change (strength) of the light intensity.

Here, when the pulse measurement is performed indoors, the light receiving unit 483B can detect a change in the intensity of the detection light even by a method using only infrared light in the near infrared region. However, when the pulse measurement is performed outdoors, noise or the like is generated in the light reception result in the light receiving unit 483B due to sunlight having strong near infrared rays.
In addition, green (wavelength: about 500 to 550 nm) visible light easily penetrates into the skin as compared with visible light of other wavelengths, so it is particularly suitable for measuring pulse rate among visible light. Is. However, when the pulse measurement is performed with green visible light alone, it is necessary to particularly increase the power of the emitted light, and it is difficult to stably measure the pulse rate.

Therefore, by using both near-infrared infrared light and green visible light as the light source used for pulse rate measurement, these disadvantages can be compensated for each other, and the pulse measurement can be performed outdoors. Can be implemented.
Moreover, since the pulse measuring device 400 includes the light-emitting element 1 with high efficiency and long life, the pulse measuring device 400 is excellent in reliability.

(Authentication device)
Next, a case where the light emitting device of the present invention is applied to an authentication device will be described.
FIG. 9 is a diagram showing an embodiment of the authentication device of the present invention.
An authentication apparatus 1000 illustrated in FIG. 9 is a biometric authentication apparatus that authenticates an individual using the biometric information of the biometric F (fingertip in this embodiment).

The authentication apparatus 1000 includes a light source 100B, a cover glass 1001, a microlens array 1002, a light receiving element group 1003, a light emitting element driving unit 1006, a light receiving element driving unit 1004, and a control unit 1005.
The light source 100 </ b> B includes a plurality of the light emitting elements 1 described above, and irradiates near-infrared infrared light and green visible light toward the living body F that is an imaging target.

That is, the light source 100B includes a plurality of light emitting elements 1 having the configuration described in the fifth embodiment.
In the light source 100B, the plurality of light emitting elements 1 are arranged along the outer peripheral portion of the cover glass 1001, for example.
The cover glass 1001 is a part where the living body F is in contact with or close to.

The microlens array 1002 is provided on the side opposite to the side of the cover glass 1001 where the living body F is in contact with or close to. The microlens array 1002 includes a plurality of microlenses arranged in a matrix.
The light receiving element group 1003 is provided on the side opposite to the cover glass 1001 with respect to the microlens array 1002. The light receiving element group 1003 includes a plurality of light receiving elements provided in a matrix corresponding to the plurality of microlenses of the microlens array 1002. As each light receiving element of the light receiving element group 1003, for example, a CCD (Charge Coupled Device), a CMOS, or the like can be used.

The light emitting element driving unit 1006 is a driving circuit that drives the light source 100B.
The light receiving element driving unit 1004 is a drive circuit that drives the light receiving element group 1003.
The control unit 1005 is, for example, an MPU, and has a function of controlling driving of the light emitting element driving unit 1006 and the light receiving element driving unit 1004.
In addition, the control unit 1005 has a function of performing authentication of the living body F by comparing the light reception result of the light receiving element group 1003 with biometric authentication information stored in advance.

For example, the control unit 1005 generates an image pattern (for example, a vein pattern) related to the living body F based on the light reception result of the light receiving element group 1003. Then, the control unit 1005 compares the image pattern with an image pattern stored in advance as biometric authentication information, and performs authentication (for example, vein authentication) of the biometric F based on the comparison result.
According to such an authentication apparatus 1000, biometric authentication is performed based on a light reception result in the light receiving element group 1003 formed using near-infrared infrared light and green visible light.

Here, when biometric authentication is performed indoors, an image pattern (for example, a vein pattern) can also be generated by a method using only near-infrared infrared light. However, when the biometric authentication is performed outdoors, noise is generated in the light reception result in the light receiving element group 1003 due to the fact that sunlight has a strong near infrared ray.
Further, green (wavelength: about 500 to 550 nm) visible light is suitable for generating an image pattern (for example, a vein pattern) among visible light.
Therefore, outdoor biometric authentication can be performed by using near-infrared infrared light and green visible light as light sources used for biometric authentication.
Further, since the light-emitting element 1 having high efficiency and long life is provided, the reliability is excellent.
Such an authentication apparatus 1000 can be incorporated into various electronic devices.

(Electronics)
FIG. 10 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which the electronic apparatus of the present invention is applied.
In this figure, a personal computer 1100 includes a main body 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display. The display unit 1106 is rotatable with respect to the main body 1104 via a hinge structure. It is supported by.
In the personal computer 1100, the main body 1104 is provided with the authentication device 1000 described above.
According to such a personal computer 1100, since the light-emitting element 1 with high efficiency and long life is provided, the reliability is excellent.

In addition to the personal computer (mobile personal computer) shown in FIG. 10, the electronic apparatus of the present invention may be, for example, a mobile phone, a digital still camera, a television, a video camera, a viewfinder type, or a monitor direct view type video tape. Recorder, laptop personal computer, car navigation system, pager, electronic organizer (including communication function), electronic dictionary, calculator, electronic game device, word processor, workstation, video phone, security TV monitor, electronic binoculars, POS Terminals, devices equipped with a touch panel (for example, cash dispensers of financial institutions, automatic ticket vending machines), medical devices (for example, electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse measuring devices, electrocardiographic display devices, ultrasonic diagnostics) Device, endoscope display device), fish school , Various measuring instruments, gages (e.g., gages for vehicles, aircraft, and ships), a flight simulator, various monitors, and a projection display such as a projector.
As mentioned above, although the light emitting element of this invention, the light-emitting device, and the electronic device were demonstrated based on embodiment of illustration, this invention is not limited to these.
For example, the light-emitting element, the light-emitting device, and the electronic device of the present invention can be replaced with any element that can exhibit the same function, or can have any structure.

Next, specific examples of the present invention will be described.
1. Production of thiadiazole compound (Synthesis Example A1) Synthesis of compound represented by formula D-2

Synthesis (A1-1)
A 5-liter flask was charged with 1500 ml of fuming nitric acid and cooled. Thereto, 1500 ml of sulfuric acid was added in portions while maintaining the temperature at 10 to 50 ° C. Further, 150 g of compound (a), which is a raw material dibromobenzothiadiazole, was added in small portions over 1 hour. At that time, the solution temperature was adjusted to 5 ° C. or lower. After adding the whole amount, the reaction was allowed to proceed at room temperature (25 ° C.) for 20 hours. After the reaction, the reaction solution was poured into 3 kg of ice and stirred overnight. Thereafter, the mixture was filtered and washed with methanol and heptane.
The residue remaining after filtration was dissolved in 200 ml of toluene by heating, and then gradually cooled to room temperature, followed by filtration. The residue was washed with a small amount of toluene and then dried under reduced pressure.
As a result, 60 g of compound (b) (4,7-dibromo-5,6-dinitro-benzo [1,2,5] thiadiazole) having an HPLC purity of 95% was obtained.

Synthesis (A1-2)
In a 5 liter flask under Ar, 30 g of the obtained dibromo compound (b), 54.2 g of triphenylamine boronic acid, 2500 ml of toluene, 2M aqueous cesium carbonate solution (152 g / (distilled water) 234 ml). The mixture was allowed to react at 90 ° C. overnight. After the reaction, filtration, liquid separation and concentration were performed, and 52 g of the resulting crude product was separated with a silica gel column (SiO ₂ 5 kg) to obtain a red-purple solid.
As a result, 8.9 g of a compound (c) having a HPLC purity of 96% was obtained.

In the synthesis of the boronic acid form of triphenylamine, 246 g of 4-bromotriphenylamine (commercially available product) and 1500 ml of dehydrated tetrahydrofuran were placed in a 5-liter flask under Ar, and 1.6 M n- 570 ml of BuLi / hexane solution was added dropwise over 3 hours. After 30 minutes, 429 g of triisopropyl borate was added dropwise over 1 hour. After dropping, the reaction was allowed to proceed overnight at the expected temperature. After the reaction, 2 liters of water was added dropwise, and then extracted with 2 liters of toluene and separated. The organic layer was concentrated, recrystallized, filtered and dried to obtain 160 g of a boronic acid compound as a white target product.
The HPLC purity of the obtained boronic acid compound was 99%.

Synthesis (A1-3)
Under Ar, 8 g of the obtained dinitro compound (c), 7 g of reduced iron, and 600 ml of acetic acid were placed in a 1 liter flask, reacted at 80 ° C. for 4 hours, and cooled to room temperature. After the reaction, the reaction solution was poured into 1.5 liters of ion exchange water, and 1.5 liters of ethyl acetate was further added thereto. After the addition, since a solid was precipitated, 1 liter of tetrahydrofuran and 300 g of sodium chloride were added and separated. The aqueous layer was re-extracted with 1 liter of tetrahydrofuran. The concentrated and dried product was washed again with a small amount of water and methanol to obtain an orange solid.
As a result, 7 g of a compound (d) having an HPLC purity of 80% was obtained.

Synthesis (A1-4)
Under Ar, a 1 liter flask was charged with 4.5 g of the obtained diamine compound (d), 3.7 g of benzyl, and 300 ml of acetic acid as a solvent, and reacted at 80 ° C. for 2 hours. After the reaction, the reaction solution was cooled to room temperature, poured into 1 liter of ion-exchanged water, and the crystals were filtered and washed with water to obtain 7 g of a black-green solid. The black-green solid was purified with a silica gel column (SiO ₂ 1 kg).
As a result, 4 g of a compound (e) (compound represented by the formula D-2) having an HPLC purity of 99% was obtained. Mass analysis of this compound (e) showed M +: 826.
Furthermore, the obtained compound (e) was purified by sublimation at a preset temperature of 340 ° C. The HPLC purity of the compound (e) after the purification by sublimation was 99%.
(Synthesis Example A2) Synthesis of Compound Represented by Formula D-8

Synthesis (A2-1) to (A2-3)
In the same manner as in the synthesis (A1-1) to (A1-3) described in Synthesis Example A1, a compound (d) that is a diamine body was obtained.
Synthesis (A2-4)
Under Ar, a 1 liter flask was charged with 1.5 g of the obtained diamine compound (d), 0.6 g of 9,10-phenanthrenequinone, and 300 ml of acetic acid as a solvent, and reacted at 80 ° C. for 2 hours. . After the reaction, the reaction solution was cooled to room temperature, poured into 1 liter of ion-exchanged water, and the crystals were filtered, washed with water, and 2 g of a black-green solid was obtained. The black-green solid was purified with a silica gel column (SiO ₂ 1 kg).
As a result, 1.5 g of a compound (f) (compound represented by the formula D-8) having an HPLC purity of 99% was obtained. A mass spectrum of the compound (f) was M +: 824.
Furthermore, the obtained compound (f) was purified by sublimation at a preset temperature of 340 ° C. The HPLC purity of the compound (f) after the sublimation purification was 99%.

2. Production of host material (tetracene-based material) (Synthesis Example B1) Synthesis of Compound Represented by Formula H1-2

Synthesis (B1-1)
Under Ar, 6 g 4-bromobiphenyl and 50 ml dry diethyl ether were placed in a 300 ml flask. At room temperature, 14.5 ml of 1.6M n-BuLi / hexane solution was added dropwise and reacted for 30 minutes.
Separately, 5,12-naphthacenequinone 2.7 and 100 ml of dry toluene were charged into a 500 ml flask under Ar. The biphenyllithium prepared previously was dripped there and it was made to react for 3 hours. After the reaction, 20 ml of distilled water was added, stirred for 30 minutes, put into methanol, and the solid was separated by filtration. The obtained solid was purified on silica gel (SiO ₂ 500 g).
This gave 4.5 g of a white solid (5,12-bisbiphenyl-4-yl-5,12-dihydro-naphthacene-5,12-diol).

Synthesis (B1-2)
4.5 g of the diol obtained in synthesis (B1-1) and 300 ml of acetic acid were weighed and placed in a 1000 ml flask. A solution prepared by dissolving 5 g of tin (II) chloride (anhydrous) in 5 g of hydrochloric acid (35%) was added and stirred for 30 minutes. Then, it moved to the separating funnel, added toluene, liquid-separated and washed with distilled water, and dried. The obtained solid was purified with silica gel (SiO ₂ 500 g) to obtain 4 g of a yellow solid (compound represented by the formula H1-2).

3. Production of light emitting device (Example 1)
<1> First, a transparent glass substrate having an average thickness of 0.5 mm was prepared. Next, an ITO electrode (anode) having an average thickness of 100 nm was formed on the substrate by sputtering.
And after immersing a board | substrate in order of acetone and 2-propanol and ultrasonically cleaning, oxygen plasma treatment and argon plasma treatment were performed. Each of these plasma treatments was performed at a plasma power of 100 W, a gas flow rate of 20 sccm, and a treatment time of 5 seconds with the substrate heated to 70 to 90 ° C.

<2> Next, an amine-based hole transporting material (tetrakis-p-biphenylyl-benzidine) was deposited on the ITO electrode by a vacuum deposition method to form a hole transporting layer having an average thickness of 50 nm.
<3> Next, the constituent material of the infrared light emitting layer was vapor-deposited on the hole transport layer by a vacuum vapor deposition method to form an infrared light emitting layer having an average thickness of 10 nm. As a constituent material of the infrared light emitting layer, a compound represented by the formula D-2 was used as a luminescent material (guest material), and a compound (tetracene-based material) represented by the formula H1-2 was used as a host material. Further, the content (dope concentration) of the light emitting material (dopant) in the infrared light emitting layer was 4.0 wt%.

  <4> Next, the constituent material of the red light emitting layer was deposited on the infrared light emitting layer by a vacuum vapor deposition method to form a red light emitting layer having an average thickness of 5 nm. As a constituent material of the red light emitting layer, a compound (diindenoperylene derivative) represented by the chemical formula (17) is used as a light emitting material (guest material), and a compound (tetracene-based) represented by the formula H1-2 as a host material. Material) was used. Further, the content (doping concentration) of the light emitting material (dopant) in the red light emitting layer was set to 2.0 wt%.

<5> Next, on the red light emitting layer, a first intermediate layer having an average thickness of 5 nm composed of the following constituent materials of the first intermediate layer was formed using a vacuum deposition method.
Here, as the constituent material of the first intermediate layer, the compound represented by the formula H1-2 was used as the host material, and the compound represented by the chemical formula (22) was used as the amine material. Further, the content of the host material in the first intermediate layer was 50 wt%.

  <6> Next, the constituent material of the blue light emitting layer was vapor-deposited on the first intermediate layer by a vacuum evaporation method to form a blue light emitting layer having an average thickness of 15 nm. As a constituent material of the blue light emitting layer, a compound represented by the chemical formula (24B) (styrylamine compound) is used as a light emitting material (guest material), and a compound represented by the formula H2-34 (anthracene material) as a host material ) Was used. Further, the content (dope concentration) of the light emitting material (dopant) in the blue light emitting layer was 7.0 wt%.

  <7> Next, the constituent material of the green light emitting layer was deposited on the blue light emitting layer by a vacuum deposition method to form a green light emitting layer having an average thickness of 25 nm. As a constituent material of the green light emitting layer, a compound (quinacridone derivative) represented by the chemical formula (25) is used as a light emitting material (guest material), and a compound (anthracene-based material) represented by the formula H2-34 is used as a host material. Using. Further, the content (doping concentration) of the light emitting material (dopant) in the green light emitting layer was set to 7.0 wt%.

<8> Next, on the green light-emitting layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was formed by vacuum deposition, and an electron transport layer having an average thickness of 30 nm was formed. Formed.
<9> Next, on the electron transport layer, lithium fluoride (LiF) was formed by a vacuum vapor deposition method, thereby forming an electron injection layer having an average thickness of 1 nm.
<10> Next, Al was formed into a film by the vacuum evaporation method on the electron injection layer. Thereby, a cathode having an average thickness of 100 nm made of Al was formed.
<11> Next, a glass protective cover (sealing member) was placed over the formed layers, and fixed and sealed with an epoxy resin.
The light emitting device was manufactured through the above steps.

(Example 2)
In Example <3> of Example 1, except that the compound represented by Formula D-8 was used instead of the compound represented by Formula D-2 as the light emitting material of the infrared light emitting layer, the Example In the same manner as in Example 1, a light emitting device was produced.
(Example 3)
<1> First, a transparent glass substrate having an average thickness of 0.5 mm was prepared. Next, an ITO electrode (anode) having an average thickness of 100 nm was formed on the substrate by sputtering.
And after immersing a board | substrate in order of acetone and 2-propanol and ultrasonically cleaning, oxygen plasma treatment and argon plasma treatment were performed. Each of these plasma treatments was performed at a plasma power of 100 W, a gas flow rate of 20 sccm, and a treatment time of 5 seconds with the substrate heated to 70 to 90 ° C.

<2> Next, an amine-based hole transporting material (tetrakis-p-biphenylyl-benzidine) was deposited on the ITO electrode by a vacuum deposition method to form a hole transporting layer having an average thickness of 50 nm.
<3> Next, the constituent material of the red light emitting layer was vapor-deposited on the hole transport layer by a vacuum vapor deposition method to form a red light emitting layer having an average thickness of 5 nm. As a constituent material of the red light emitting layer, a compound (diindenoperylene derivative) represented by the chemical formula (17) is used as a light emitting material (guest material), and a compound (tetracene-based) represented by the formula H1-2 as a host material. Material) was used. Further, the content (doping concentration) of the light emitting material (dopant) in the red light emitting layer was set to 2.0 wt%.

<4> Next, on the red light emitting layer, a first intermediate layer having an average thickness of 5 nm composed of the following constituent materials of the first intermediate layer was formed using a vacuum deposition method.
Here, as the constituent material of the first intermediate layer, the compound represented by the formula H1-2 was used as the host material, and the compound represented by the chemical formula (22) was used as the amine material. Further, the content of the host material in the first intermediate layer was 50 wt%.

  <5> Next, the constituent material of the blue light emitting layer was deposited on the first intermediate layer by a vacuum vapor deposition method to form a blue light emitting layer having an average thickness of 15 nm. As a constituent material of the blue light emitting layer, a compound represented by the chemical formula (24B) (styrylamine compound) is used as a light emitting material (guest material), and a compound represented by the formula H2-34 (anthracene material) as a host material ) Was used. Further, the content (dope concentration) of the light emitting material (dopant) in the blue light emitting layer was 7.0 wt%.

  <6> Next, on the blue light emitting layer, the constituent material of the green light emitting layer was vapor-deposited by a vacuum vapor deposition method to form a green light emitting layer having an average thickness of 25 nm. As a constituent material of the green light emitting layer, a compound (quinacridone derivative) represented by the chemical formula (25) is used as a light emitting material (guest material), and a compound (anthracene-based material) represented by the formula H2-34 is used as a host material. Using. Further, the content (doping concentration) of the light emitting material (dopant) in the green light emitting layer was set to 7.0 wt%.

<7> Next, on the green light emitting layer, a second intermediate layer having an average thickness of 5 nm composed of the constituent materials of the second intermediate layer described below was formed using a vacuum deposition method.
Here, as the constituent material of the second intermediate layer, the compound represented by the formula H1-2 was used as the host material, and the compound represented by the chemical formula (22) described above was used as the amine material. Further, the content of the host material in the second intermediate layer was 50 wt%.

<8> Next, the constituent material of the infrared light emitting layer was deposited on the second intermediate layer by a vacuum vapor deposition method to form an infrared light emitting layer having an average thickness of 10 nm. As a constituent material of the infrared light emitting layer, a platinum complex compound represented by Formula 2 was used as a light emitting material (guest material), and tris (8-quinolinolato) aluminum complex (Alq ₃ ) was used as a host material. Further, the content (dope concentration) of the light emitting material (dopant) in the infrared light emitting layer was 2.0 wt%.

<9> Next, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is formed on the infrared light emitting layer by a vacuum deposition method, and an electron transport layer having an average thickness of 15 nm is formed. Formed.
<10> Next, on the electron transport layer, lithium fluoride (LiF) was formed by a vacuum vapor deposition method, thereby forming an electron injection layer having an average thickness of 1 nm.

<11> Next, Al was formed into a film by the vacuum evaporation method on the electron injection layer. Thereby, a cathode having an average thickness of 100 nm made of Al was formed.
<12> Next, a glass protective cover (sealing member) was placed over the formed layers, and fixed and sealed with an epoxy resin.
The light emitting device was manufactured through the above steps.

Example 4
<1> First, a transparent glass substrate having an average thickness of 0.5 mm was prepared. Next, an ITO electrode (anode) having an average thickness of 100 nm was formed on the substrate by sputtering.
And after immersing a board | substrate in order of acetone and 2-propanol and ultrasonically cleaning, oxygen plasma treatment and argon plasma treatment were performed. Each of these plasma treatments was performed at a plasma power of 100 W, a gas flow rate of 20 sccm, and a treatment time of 5 seconds with the substrate heated to 70 to 90 ° C.

<2> Next, an amine-based hole transporting material (tetrakis-p-biphenylyl-benzidine) was deposited on the ITO electrode by a vacuum deposition method to form a hole transporting layer having an average thickness of 50 nm.
<3> Next, the constituent material of the infrared light emitting layer was vapor-deposited on the hole transport layer by a vacuum vapor deposition method to form an infrared light emitting layer having an average thickness of 10 nm. As a constituent material of the infrared light emitting layer, a compound represented by the formula D-2 was used as a luminescent material (guest material), and a compound (tetracene-based material) represented by the formula H1-2 was used as a host material. Further, the content (dope concentration) of the light emitting material (dopant) in the infrared light emitting layer was 4.0 wt%.

<4> Next, on the infrared light emitting layer, a first intermediate layer having an average thickness of 5 nm composed of the following constituent materials of the first intermediate layer was formed using a vacuum deposition method.
Here, as the constituent material of the first intermediate layer, the compound represented by the formula H1-2 was used as the host material, and the compound represented by the chemical formula (22) was used as the amine material. Further, the content of the host material in the first intermediate layer was 50 wt%.

  <5> Next, the constituent material of the yellow light-emitting layer was deposited on the first intermediate layer by a vacuum evaporation method to form a yellow light-emitting layer having an average thickness of 15 nm. As a constituent material of the yellow light-emitting layer, a compound (tetracene compound) represented by the chemical formula (26A) is used as a light-emitting material (guest material), and a compound (anthracene-based material) represented by the formula H2-34 is used as a host material. Using. The content (dope concentration) of the light emitting material (dopant) in the yellow light emitting layer was 4.0 wt%.

  <6> Next, on the yellow light-emitting layer, the constituent material of the cyan light-emitting layer was vapor-deposited by a vacuum vapor deposition method to form a cyan light-emitting layer having an average thickness of 15 nm. As a constituent material of the cyan light emitting layer, a compound (styrylamine compound) represented by the chemical formula (24A) is used as a light emitting material (guest material), and a compound (anthracene material) represented by the formula H2-34 as a host material. ) Was used. Further, the content (dope concentration) of the light emitting material (dopant) in the cyan light emitting layer was set to 7.0 wt%.

<7> Next, on the cyan light emitting layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was formed by vacuum deposition, and an electron transport layer having an average thickness of 30 nm was formed. Formed.
<8> Next, on the electron transport layer, lithium fluoride (LiF) was formed into a film by a vacuum evaporation method to form an electron injection layer having an average thickness of 1 nm.

<9> Next, Al was formed into a film by the vacuum evaporation method on the electron injection layer. Thereby, a cathode having an average thickness of 100 nm made of Al was formed.
<10> Next, a glass protective cover (sealing member) was placed over the formed layers, and fixed and sealed with an epoxy resin.
The light emitting device was manufactured through the above steps.

(Example 5)
In Example <4> of Example 4, except that the compound represented by Formula D-8 was used instead of the compound represented by Formula D-2 as the light emitting material of the infrared light emitting layer, the Example In the same manner as in Example 4, a light emitting device was produced.
(Example 6)
<1> First, a transparent glass substrate having an average thickness of 0.5 mm was prepared. Next, an ITO electrode (anode) having an average thickness of 100 nm was formed on the substrate by sputtering.
And after immersing a board | substrate in order of acetone and 2-propanol and ultrasonically cleaning, oxygen plasma treatment and argon plasma treatment were performed. Each of these plasma treatments was performed at a plasma power of 100 W, a gas flow rate of 20 sccm, and a treatment time of 5 seconds with the substrate heated to 70 to 90 ° C.

<2> Next, an amine-based hole transporting material (tetrakis-p-biphenylyl-benzidine) was deposited on the ITO electrode by a vacuum deposition method to form a hole transporting layer having an average thickness of 50 nm.
<3> Next, the constituent material of the yellow light emitting layer was vapor-deposited on the hole transport layer by a vacuum vapor deposition method to form a yellow light emitting layer having an average thickness of 15 nm. As a constituent material of the yellow light-emitting layer, a compound (tetracene compound) represented by the chemical formula (26A) is used as a light-emitting material (guest material), and a compound (anthracene-based material) represented by the formula H2-34 is used as a host material. Using. The content (dope concentration) of the light emitting material (dopant) in the yellow light emitting layer was 4.0 wt%.

  <4> Next, on the yellow light-emitting layer, the constituent material of the cyan light-emitting layer was vapor-deposited by a vacuum vapor deposition method to form a cyan light-emitting layer having an average thickness of 15 nm. As a constituent material of the cyan light emitting layer, a compound (styrylamine compound) represented by the chemical formula (24A) is used as a light emitting material (guest material), and a compound (anthracene material) represented by the formula H2-34 as a host material. ) Was used. Further, the content (dope concentration) of the light emitting material (dopant) in the cyan light emitting layer was set to 7.0 wt%.

<5> Next, on the cyan light emitting layer, a first intermediate layer having an average thickness of 5 nm composed of the following constituent materials of the first intermediate layer was formed using a vacuum deposition method.
Here, as the constituent material of the first intermediate layer, the compound represented by the formula H1-2 was used as the host material, and the compound represented by the chemical formula (22) was used as the amine material. Further, the content of the host material in the first intermediate layer was 50 wt%.

<6> Next, on the 1st intermediate | middle layer, the constituent material of the infrared light emitting layer was vapor-deposited by the vacuum evaporation method, and the infrared light emitting layer with an average thickness of 10 nm was formed. As a constituent material of the infrared light emitting layer, a platinum complex compound represented by Formula 2 was used as a light emitting material (guest material), and tris (8-quinolinolato) aluminum complex (Alq ₃ ) was used as a host material. Further, the content (dope concentration) of the light emitting material (dopant) in the infrared light emitting layer was 2.0 wt%.

<7> Next, on the infrared light emitting layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was formed by vacuum deposition, and an electron transport layer having an average thickness of 30 nm was formed. Formed.
<8> Next, on the electron transport layer, lithium fluoride (LiF) was formed into a film by a vacuum evaporation method to form an electron injection layer having an average thickness of 1 nm.

<9> Next, Al was formed into a film by the vacuum evaporation method on the electron injection layer. Thereby, a cathode having an average thickness of 100 nm made of Al was formed.
<10> Next, a glass protective cover (sealing member) was placed over the formed layers, and fixed and sealed with an epoxy resin.
The light emitting device was manufactured through the above steps.

(Example 7)
<1> First, a transparent glass substrate having an average thickness of 0.5 mm was prepared. Next, an ITO electrode (anode) having an average thickness of 100 nm was formed on the substrate by sputtering.
And after immersing a board | substrate in order of acetone and 2-propanol and ultrasonically cleaning, oxygen plasma treatment and argon plasma treatment were performed. Each of these plasma treatments was performed at a plasma power of 100 W, a gas flow rate of 20 sccm, and a treatment time of 5 seconds with the substrate heated to 70 to 90 ° C.

<2> Next, an amine-based hole transporting material (tetrakis-p-biphenylyl-benzidine) was deposited on the ITO electrode by a vacuum deposition method to form a hole transporting layer having an average thickness of 50 nm.
<3> Next, the constituent material of the infrared light emitting layer was vapor-deposited on the hole transport layer by a vacuum vapor deposition method to form an infrared light emitting layer having an average thickness of 25 nm. As a constituent material of the infrared light emitting layer, a compound represented by the formula D-2 was used as a luminescent material (guest material), and a compound (tetracene-based material) represented by the formula H1-2 was used as a host material. Further, the content (dope concentration) of the light emitting material (dopant) in the infrared light emitting layer was 4.0 wt%.

<4> Next, on the infrared light emitting layer, a first intermediate layer having an average thickness of 5 nm composed of the following constituent materials of the first intermediate layer was formed using a vacuum deposition method.
Here, as the constituent material of the first intermediate layer, the compound represented by the formula H1-2 was used as the host material, and the compound represented by the chemical formula (22) was used as the amine material. Further, the content of the host material in the first intermediate layer was 50 wt%.

  <5> Next, the constituent material of the green light emitting layer was vapor-deposited on the first intermediate layer by a vacuum vapor deposition method to form a green light emitting layer having an average thickness of 10 nm. As a constituent material of the green light emitting layer, fac-tris (2-phenylpyridine) iridium (Ir (ppy) 3) is used as a light emitting material (guest material), and 3-phenyl-4- (1′-naphthyl) is used as a host material. ) -5-phenylcarbazole, 4,4′-N, N′-dicarbazolebiphenyl (CBP) was used. Further, the content (dope concentration) of the light emitting material (dopant) in the green light emitting layer was 15 wt%.

<6> Next, bis (2-methyl-8-quinolinolato) (p-phenylphenolato) aluminum (BAlq) is formed on the green light-emitting layer by a vacuum deposition method, and a second intermediate having an average thickness of 20 nm. A layer was formed.
<7> Next, on the second intermediate layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was formed by vacuum deposition, and an electron transport layer having an average thickness of 40 nm. Formed.

<8> Next, on the electron transport layer, lithium fluoride (LiF) was formed into a film by a vacuum evaporation method to form an electron injection layer having an average thickness of 1 nm.
<9> Next, Al was formed into a film by the vacuum evaporation method on the electron injection layer. Thereby, a cathode having an average thickness of 100 nm made of Al was formed.
<10> Next, a glass protective cover (sealing member) was placed over the formed layers, and fixed and sealed with an epoxy resin.
The light emitting device was manufactured through the above steps.

(Example 8)
In Example <7> of Example 7, except that the compound represented by Formula D-8 was used instead of the compound represented by Formula D-2 as the light emitting material of the infrared light emitting layer, the Example In the same manner as in Example 7, a light emitting device was produced.
(Reference Example 1)
<1> First, a transparent glass substrate having an average thickness of 0.5 mm was prepared. Next, an ITO electrode (anode) having an average thickness of 100 nm was formed on the substrate by sputtering.
And after immersing a board | substrate in order of acetone and 2-propanol and ultrasonically cleaning, oxygen plasma treatment and argon plasma treatment were performed. Each of these plasma treatments was performed at a plasma power of 100 W, a gas flow rate of 20 sccm, and a treatment time of 5 seconds with the substrate heated to 70 to 90 ° C.

<2> Next, an amine-based hole transporting material (tetrakis-p-biphenylyl-benzidine) was deposited on the ITO electrode by a vacuum deposition method to form a hole transporting layer having an average thickness of 50 nm.
<3> Next, the constituent material of the infrared light emitting layer was vapor-deposited on the hole transport layer by a vacuum vapor deposition method to form an infrared light emitting layer having an average thickness of 25 nm. As a constituent material of the infrared light emitting layer, a compound represented by the formula D-2 was used as a luminescent material (guest material), and a compound (tetracene-based material) represented by the formula H1-2 was used as a host material. Further, the content (dope concentration) of the light emitting material (dopant) in the infrared light emitting layer was 4.0 wt%.

<4> Next, on the infrared light emitting layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was formed by vacuum deposition, and an electron transport layer having an average thickness of 80 nm was formed. Formed.
<5> Next, on the electron transport layer, lithium fluoride (LiF) was formed by a vacuum deposition method to form an electron injection layer having an average thickness of 1 nm.
<6> Next, Al was formed into a film by the vacuum evaporation method on the electron injection layer. Thereby, a cathode having an average thickness of 100 nm made of Al was formed.
<7> Next, a glass protective cover (sealing member) was placed over the formed layers, and fixed and sealed with an epoxy resin.
The light emitting device was manufactured through the above steps.
(Reference Example 2)
In the step <3> of Reference Example 1, the Reference Example except that the compound represented by Formula D-8 was used instead of the compound represented by Formula D-2 as the light emitting material of the infrared light emitting layer. In the same manner as in Example 1, a light emitting device was produced.

4). Evaluation About each example and each reference example, using a constant current power source (KEITLEY2400 manufactured by Toyo Corporation), a constant current of 100 mA / cm ² was passed through the light emitting element, and the emission waveform at that time was measured with a waveform measuring instrument (Soma Optics). It was measured using “S-2440” manufactured by the company.
In addition, the chromaticity (x, y) of the emitted light at that time is measured using a chromaticity meter (“CS-2000” manufactured by Konica Minolta Sensing Co., Ltd.), and the emitted light power is measured by an optical power measuring device (manufactured by ADC Corporation “Hikari”). Measured using a power meter 8230 ").
Furthermore, the voltage value (drive voltage) at that time was also measured.
These measurement results are shown in Table 1 and FIGS.

  As is clear from FIGS. 11 to 13, the light-emitting elements of the respective examples were able to emit visible light having a target color (wavelength) and to emit infrared light in the near infrared region. .

As is clear from Table 1, the light emitting elements of Examples 1 to 6 emit white light as visible light, and the light emitting elements of Examples 7 and 8 emit green light as visible light. became.
Furthermore, as is clear from Table 1, the light emitting elements of the respective examples can obtain high light emission power and can suppress the driving voltage. Therefore, the light emitting elements of the respective examples have excellent luminous efficiency. It was found to have

DESCRIPTION OF SYMBOLS 1 ... Light emitting element 2 ... Substrate 3 ... Anode 4 ... Hole injection layer 5 ... Hole transport layer 6 ... Infrared light emitting layer 7 ... Visible light emitting layer 7R ... Red light emitting layer 7G ... Green Light emitting layer 7B …… Blue light emitting layer 7C …… Cyan light emitting layer 7Y …… Yellow light emitting layer 8 …… Blue light emitting layer 8A …… First intermediate layer 8B …… Second intermediate layer 9 …… Electron transport layer 10 …… Electrons Injection layer 11 ... Cathode 12 ... Sealing member 14 ... Laminated body 100 ... Display device 100B ... Light source 200 ... Illumination light source 201 ... Laminated body 202 ... Transparent electrode 203 ... Counter electrode 205 ... Transparent substrate 300 …… Skin diagnostic device 302 …… First measurement probe 303 …… Second measurement probe 304 …… Keyboard 305 …… Calculation means 306 …… Digital micro camera 307 …… Display 400 …… Pulse measuring device 481 …… Sensor module 482 …… Device main body 483 …… Pulse wave sensor 483A …… Light source 484B …… Light receiving unit 497 …… Display unit 1000 …… Authentication device 1001 …… Cover glass 1002 …… Micro Lens array 1003... Light receiving element group 1004... Light receiving element driving unit 1005... Control unit 1006... Light emitting element driving unit 1100 ... Personal computer 1102 ... Keyboard 1104 ... Main body 1106 ... Display unit F. L …… Wiring

Claims (5)

The anode,
A cathode,
Provided between the anode and the cathode, the visible light-emitting layer to emit visible light, possess an intermediate layer, and the infrared light emitting layer which emits infrared,
The visible light emitting layer, the intermediate layer, and the infrared light emitting layer are laminated in this order from the anode side,
The infrared light emitting layer contains a platinum complex compound represented by the following general formula (2) as a light emitting material, and a quinolinolato metal complex as a host material,
The intermediate layer contains an acene-based material and an amine-based material .

The light emitting element according to claim 1 , which emits white light as the visible light. The light emitting element of Claim 1 or 2 which light-emits green light as said visible light. The light emitting device characterized in that it comprises a device as claimed in any of claims 1 to 3. An electronic apparatus comprising the light emitting device according to claim 4 .

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