JP5942850B2 - Manufacturing method of electronic device, manufacturing method of electric and electronic parts - Google Patents

Description

The present invention is manufactured how electronic devices, electrical relates to the production how electronic components.

  In a conventional electronic device having a COW (Chip On Wafer) structure, it is not necessary to reduce the thickness of the semiconductor wafer so much, so the backside grinding process of the semiconductor wafer, the TSV (Through Silicon Via) forming process, and the solder bump forming process And the semiconductor chip mounting process could be implemented without sticking a support body to a semiconductor wafer (patent document 1).

  On the other hand, as electronic devices become lighter and thinner, there is an increasing market demand for reducing the thickness of semiconductor wafers. However, if the thickness of the semiconductor wafer is reduced (for example, 100 μm or less), the self-supporting function of the semiconductor wafer itself is lost, so that a problem relating to handling properties such as breakage of the semiconductor wafer occurs in the above process. It was difficult to manufacture with good yield.

JP 2009-110995 A

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a WL-CSP (Wafer Level-Chip Size Package) electronic device having a COW structure with a simple manufacturing process, good yield, low cost, and high reliability. The present invention also provides an electronic device manufactured by the method for manufacturing an electronic device, and an electronic device manufactured by the method for manufacturing an electronic device.

The object of the present invention can be achieved by the following (1) to ( 15 ).
(1) A first fixed resin layer is provided on the surface of the first support substrate, and then the first fixed resin layer and the semiconductor wafer are placed so that the functional surfaces of the first fixed resin layer and the semiconductor wafer face each other. Bonding or providing a first fixed resin layer on the functional surface of the semiconductor wafer, and then bonding the first fixed resin layer and the first support substrate together to form the first support substrate / first Obtaining a first laminate in which the fixed resin layer / semiconductor wafer are laminated in this order;
Grinding the back surface of the semiconductor wafer, and further forming a semiconductor wafer back surface processing step of forming electrodes on the back surface of the semiconductor wafer;
The back surface of the semiconductor wafer and the second support substrate are bonded together via a second fixed resin layer, thereby providing a first support substrate / first fixed resin layer / semiconductor wafer / second fixed resin layer / Obtaining a second laminate in which the second support base material is laminated in this order;
A first peeling step of peeling the first supporting substrate from the second laminated body by heating the second laminated body;
Mounting a plurality of semiconductor devices on the functional surface of the semiconductor wafer to obtain a third laminated body in which the second support base material / second fixed resin layer / semiconductor wafer / semiconductor device are laminated in this order; ,
A second peeling step of peeling the second support substrate from the third laminate;
I have a,
The first fixed resin layer is a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays, and the first peeling step is performed with active energy rays from the first support substrate side. , A method for producing an electronic device , which is a step of peeling the first support substrate by thermally decomposing the thermally decomposable fixing resin layer ,
(2) The method for manufacturing an electronic device according to ( 1 ), further including a step of removing the first fixed resin layer attached to the functional surface of the semiconductor wafer after the first peeling step.
( 3 ) The method for manufacturing an electronic device according to ( 1 ) or ( 2 ), including a step of removing the second fixed resin layer attached to the back surface of the semiconductor wafer after the second peeling step.
( 4 ) The method for manufacturing an electronic device according to any one of ( 1 ) to ( 3 ), wherein the semiconductor device is a semiconductor chip or a stacked body of semiconductor chips.
( 5 ) The method for manufacturing an electronic device according to any one of ( 1 ) to ( 4 ), wherein the semiconductor device is mounted on a semiconductor wafer via a resin composition having a flux function.
( 6 ) The method for manufacturing an electronic device according to any one of ( 1 ) to ( 5 ), including a sealing step of sealing the semiconductor device with a sealing resin after the step of obtaining the third stacked body.
( 7 ) The method for manufacturing an electronic device according to any one of ( 1 ) to ( 6 ), further including an individualization step for individual semiconductor device units after the second peeling step .
(8) The method for manufacturing an electronic device according to any one of (1) to ( 7 ) , wherein the first fixed resin layer is a thermally decomposable fixed resin layer containing a thermally decomposable resin .
(9) The thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with the active energy ray is a thermally decomposable fixed resin layer containing a thermally decomposable resin whose thermal decomposition temperature is lowered by an acid (1 ) to a manufacturing method of an electronic apparatus according to any one of (8),
( 10 ) In the second peeling step, for the third laminate,
(I) heating,
(Ii) irradiating active energy rays, or (iii) supplying a solvent,
The method for producing an electronic device according to any one of ( 1 ) to ( 9 ), wherein the second supporting substrate is peeled off by
( 11 )
(I) The second fixing resin layer is a thermally decomposable or thermosoftening fixed resin layer, and in the second peeling step, the third laminate is heated to generate the thermally decomposable or Pyrolyzing or softening the heat-softening fixed resin layer,
(Ii) The second fixing resin layer is a fixing resin layer having a photothermal conversion layer, and in the second peeling step, the third laminate is irradiated to fix the resin having the photothermal conversion layer. Or (iii) the second fixed resin layer is a fixed resin layer having solvent solubility, and in the second peeling step, a solvent is supplied to the third laminate. , Dissolving the solvent-soluble fixed resin layer in a solvent,
The method for producing an electronic device according to ( 10 ), wherein the second supporting substrate is peeled off by
( 12 ) The method for manufacturing an electronic device according to ( 11 ), wherein the second fixed resin layer is a thermally decomposable fixed resin layer containing a thermally decomposable resin,
( 13 ) The second fixed resin layer is a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays, and the second peeling step is performed from the second support base material side. ( 11 ) The method for producing an electronic device according to ( 11 ), which is a step of thermally decomposing a thermally decomposable fixed resin layer after irradiation with active energy rays
( 14 ) The thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with the active energy ray is a thermally decomposable fixed resin layer containing a thermal decomposable resin whose thermal decomposition temperature is lowered by an acid ( 13 ) Electronic device manufacturing method according to
(15) A first fixed resin layer is provided on the surface of the first support substrate, and then the first fixed resin layer and the semiconductor wafer are placed so that the functional surfaces of the first fixed resin layer and the semiconductor wafer face each other. Bonding or providing a first fixed resin layer on the functional surface of the semiconductor wafer, and then bonding the first fixed resin layer and the first support substrate together to form the first support substrate / first Obtaining a first laminate in which the fixed resin layer / semiconductor wafer are laminated in this order;
Grinding the back surface of the semiconductor wafer, and further forming a semiconductor wafer back surface processing step of forming electrodes on the back surface of the semiconductor wafer;
The back surface of the semiconductor wafer and the second support substrate are bonded together via a second fixed resin layer, thereby providing a first support substrate / first fixed resin layer / semiconductor wafer / second fixed resin layer / Obtaining a second laminate in which the second support base material is laminated in this order;
A first peeling step of peeling the first supporting substrate from the second laminated body by heating the second laminated body;
Mounting a plurality of semiconductor devices on the functional surface of the semiconductor wafer to obtain a third laminated body in which the second support base material / second fixed resin layer / semiconductor wafer / semiconductor device are laminated in this order; ,
A second peeling step of peeling the second support base material from the third laminate and obtaining an electronic device in which the semiconductor device is mounted on the functional surface of the semiconductor wafer;
A step of mounting the electronic device on a substrate,
Have
The first fixed resin layer is a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays, and the first peeling step is performed with active energy rays from the first support substrate side. after irradiation with the thermal decomposition of the fixed resin layer Ru step der peeling the first support substrate by thermal decomposition electrical method of manufacturing an electronic component.

  According to the present invention, in a method for manufacturing a WL-CSP type electronic device having a COW structure, a method for manufacturing an electronic device that can provide an electronic device that has a simple manufacturing process, good yield, low cost, and high reliability, Furthermore, an electronic device manufactured by the electronic device manufacturing method can be provided.

It is a longitudinal cross-sectional view for demonstrating the manufacturing process of the electronic device concerning the 1st and 2nd embodiment of this invention. It is a longitudinal cross-sectional view for demonstrating the manufacturing process of the electronic device concerning the 1st and 2nd embodiment of this invention. It is a longitudinal cross-sectional view for demonstrating the manufacturing process of the electronic device concerning the 3rd Embodiment of this invention. It is a longitudinal cross-sectional view for demonstrating the manufacturing process of the electronic device concerning the 3rd Embodiment of this invention. It is a longitudinal cross-sectional view for demonstrating the manufacturing process of the electronic device concerning the 4th Embodiment of this invention. It is a longitudinal cross-sectional view for demonstrating the manufacturing process of the electronic device concerning the 4th Embodiment of this invention. It is a longitudinal cross-sectional view for demonstrating the manufacturing process of the electronic device concerning the 5th Embodiment of this invention. It is a longitudinal cross-sectional view for demonstrating the manufacturing process of the electronic device concerning the 5th Embodiment of this invention.

In the method of manufacturing an electronic device according to the present invention, a first fixed resin layer is provided on the surface of the first support base, and then the first fixed resin layer and the functional surface of the semiconductor wafer are opposed to each other. The first fixing resin layer and the semiconductor wafer are bonded together, or the first fixing resin layer is provided on the functional surface of the semiconductor wafer, and then the first fixing resin layer and the first supporting substrate are bonded together to form the first. A step of obtaining a first laminated body in which the supporting substrate / first fixed resin layer / semiconductor wafer are laminated in this order;
Grinding the back surface of the semiconductor wafer, and further forming a semiconductor wafer back surface processing step of forming electrodes on the back surface of the semiconductor wafer;
The back surface of the semiconductor wafer and the second support substrate are bonded together via a second fixed resin layer, thereby providing a first support substrate / first fixed resin layer / semiconductor wafer / second fixed resin layer / Obtaining a second laminate in which the second support base material is laminated in this order;
A first peeling step of peeling the first supporting substrate from the second laminate;
Mounting a plurality of semiconductor devices on the functional surface of the semiconductor wafer to obtain a third laminated body in which the second support base material / second fixed resin layer / semiconductor wafer / semiconductor device are laminated in this order; ,
A second peeling step of peeling the second support substrate from the third laminate;
It is a manufacturing method of the electronic device characterized by having.

That is, the electronic device manufacturing method of the present invention includes a step of obtaining a first laminate, a step of processing a semiconductor wafer back surface, a step of obtaining a second laminate, a first peeling step, and a third laminate. A step of obtaining a body and a second peeling step. The functional surface of the semiconductor wafer means a surface on which semiconductor elements such as transistors and diodes and circuits for connecting them are formed.
In the method for manufacturing an electronic device according to the present invention, the first fixing resin layer for fixing the first supporting substrate to the semiconductor wafer and the second fixing for fixing the second supporting substrate to the semiconductor wafer. As a resin layer, a thermally decomposable fixed resin layer, a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays, a thermosoftening fixed resin layer, and a fixed resin layer having a photothermal conversion layer There are five types of fixed resin layers having solvent solubility, and the embodiments differ depending on which type of fixed resin layer is used as the first fixed resin layer and the second fixed resin layer.

The thermally decomposable fixed resin layer is a component that constitutes the fixed resin layer in detail because the fixed resin layer is thermally decomposed by heating at a temperature equal to or higher than the thermal decomposition temperature in the peeling step. Refers to a fixed resin layer that can be thermally decomposed to peel the support substrate from the laminate. Therefore, in the peeling step, the laminated body is heated at a temperature equal to or higher than the thermal decomposition temperature of the thermally decomposable fixing resin layer, whereby the thermally decomposable fixing resin layer is thermally decomposed and the supporting substrate is peeled off. In order to thermally decompose the thermally decomposable fixing resin layer in the peeling step, the heating temperature when heating the laminate is preferably 120 to 420 ° C, particularly preferably 150 to 350 ° C.
Further, the thermally decomposable fixed resin layer includes a fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays. When using a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays, the thermal energy of the fixed resin layer is lowered by first irradiating the fixed resin layer with active energy rays in the peeling process. Then, the laminated body is heated at a temperature equal to or higher than the reduced thermal decomposition temperature, whereby the thermally decomposable fixing resin layer is thermally decomposed and the supporting base material is peeled off. Therefore, the heating temperature of the laminate in the peeling step can be lowered by using a thermally decomposable fixing resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays. In order to thermally decompose the thermally decomposable fixing resin layer after irradiation with active energy rays in the peeling step, the heating temperature when heating the laminate is preferably 100 to 400 ° C, particularly preferably 120 to 300 ° C. is there.

In addition, the heat softening fixed resin layer can be peeled off from the laminate by lowering the melt viscosity of the fixed resin layer by heating at a temperature equal to or higher than the softening temperature in the peeling step. Refers to the fixed resin layer. For this reason, in the peeling step, the laminated body is heated at a temperature equal to or higher than the heat softening temperature of the heat softening fixed resin layer to soften the heat softening fixing resin layer and peel the support substrate. In order to heat soften the thermosoftening fixed resin layer in the peeling step, the heating temperature when heating the laminate is preferably 100 to 350 ° C, particularly preferably 120 to 300 ° C.

  In addition, the fixing resin layer having the photothermal conversion layer is, in the peeling process, by irradiating active energy rays, the light absorbent contained in the photothermal conversion layer generates thermal energy, and the generated thermal energy Since the thermally decomposable resin contained in the light-to-heat conversion layer is thermally decomposed to generate voids in the light-to-heat conversion layer, it refers to a fixed resin layer that can peel the support substrate from the laminate. Therefore, in the peeling step, the photothermal conversion layer is first irradiated with active energy rays to thermally decompose the thermally decomposable resin in the photothermal change layer to generate voids, and then the support substrate is peeled off. A void means a gap such as a bubble generated between layers. In addition, the fixed resin layer having the light-heat conversion layer includes a light-heat conversion layer only and a light-heat conversion layer and an adhesive layer.

  Further, the fixed resin layer having solvent solubility means that in the peeling step, the fixed resin layer is dissolved by supplying the solvent to the fixed resin layer from the through-hole provided in the support base material, and the laminate. The fixed resin layer which can peel a support base material from is pointed out. Therefore, in a peeling process, a support base material is peeled by supplying a solvent to a fixed resin layer and dissolving a fixed resin layer.

  Table 1 shows an embodiment of a method for manufacturing an electronic device according to the present invention.

１）先に活性エネルギー線を照射した後、熱分解することを指す。

1) Refers to thermal decomposition after irradiation with active energy rays.

  When a thermally decomposable fixed resin layer is used as the first fixed resin layer and a thermally decomposable fixed resin layer or a thermosoftening fixed resin layer is used as the second fixed resin layer, the first fixed resin is used. As the layer and the second fixed resin layer, those having a thermal decomposition temperature or a thermal softening temperature higher than that of the first fixed resin layer are used. Thus, the laminate is heated at a temperature higher than the thermal decomposition temperature of the first fixed resin layer and lower than the thermal decomposition temperature or thermal softening temperature of the second fixed resin layer in the first peeling step. Thus, the first support substrate can be selectively peeled off, and the second support substrate can be prevented from being peeled off or displaced. The first fixed resin layer is a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays, and when the active energy rays are irradiated first in the first peeling step, the first In the fixed resin layer and the second fixed resin layer, the thermal decomposition temperature of the second fixed resin layer (the second fixed resin layer is a thermally decomposable fixing whose thermal decomposition temperature is lowered by irradiation with active energy rays). When it is a resin layer and is irradiated with active energy rays first in the second peeling step, the thermal decomposition temperature before irradiation with the active energy rays) or thermal softening temperature is the active energy rays in the first peeling step. A material having a temperature higher than the thermal decomposition temperature of the first fixed resin layer after irradiation is used.

  Moreover, when using both a thermally decomposable fixed resin layer as a 1st fixed resin layer and a 2nd fixed resin layer, you may use the thermally decomposable fixed resin layer of the same composition, or another composition. A thermally decomposable fixed resin layer may be used.

  When using a thermally decomposable fixed resin layer having the same composition, for example, as the first fixed resin layer and the second fixed resin layer, a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays By using this to selectively irradiate the first fixed resin layer with active energy rays in the first peeling step, the thermal decomposition temperature of the first fixed resin layer can be lowered. Thereby, in the 1st exfoliation process, the thermal decomposition temperature of the 2nd fixed resin layer can be made higher than the thermal decomposition temperature of the 1st fixed resin layer after being irradiated with an active energy ray.

  Moreover, when using the thermally decomposable fixed resin layer of another composition, for example, the thermal decomposition temperature of the thermally decomposable resin contained in the first fixed resin layer is set to the thermal decomposability contained in the second fixed resin layer. By making it lower than the thermal decomposition temperature of the resin, the thermal decomposition temperature of the second fixed resin layer can be made higher than the thermal decomposition temperature of the first fixed resin layer.

  In the case of using a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiating active energy rays as both the first fixed resin layer and the second fixed resin layer, the first peeling step Thus, when the active energy ray is irradiated from the first support base material side, the semiconductor wafer prevents the active energy ray from being irradiated to the second fixed resin layer, so that only the first fixed resin layer is irradiated. Active energy rays are irradiated.

  When a thermosoftening fixing resin layer is used as the first fixing resin layer, the first fixing resin layer and the second fixing resin layer have a thermal decomposition temperature or a heat softening temperature of the second fixing resin layer. A material having a temperature higher than the heat softening temperature of the first fixed resin layer is used. Thereby, in the first peeling step, the laminate is heated at a temperature higher than the thermal softening temperature of the first fixed resin layer and lower than the thermal decomposition temperature or thermal softening temperature of the second fixed resin layer. As a result, the first support substrate can be selectively peeled, and the second support substrate can be prevented from being peeled off or displaced. When the second fixed resin layer is a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays, and the active energy rays are irradiated first in the second peeling step, the first In the fixed resin layer and the second fixed resin layer, the thermal decomposition temperature of the second fixed resin layer before irradiation with active energy rays is higher than the thermal softening temperature of the first fixed resin layer. Use.

Moreover, when using a heat-softening fixed resin layer as both the first fixed resin layer and the second fixed resin layer, the heat softening temperature of the second fixed resin layer is set to the heat softening temperature of the first fixed resin layer. Higher than.
As a method for making the thermal softening temperature of the second fixed resin layer higher than the thermal softening temperature of the first fixed resin layer, for example, the thermal softening temperature of the thermosoftening resin contained in the first fixed resin layer is For example, the temperature may be lower than the heat softening temperature of the heat softening resin contained in the second fixed resin layer.

  When a fixed resin layer having a photothermal conversion layer is used as the first fixed resin layer and a thermally decomposable fixed resin layer or a thermosoftening fixed resin layer is used as the second fixed resin layer, the first peeling In the process, when the photothermal conversion layer is irradiated with active energy rays, thermal energy is generated from the light absorbent contained in the photothermal conversion layer, and the thermally decomposable resin is decomposed by the generated heat. Here, the first fixed resin layer and the second fixed resin layer include a thermal decomposition temperature of the second fixed resin layer (the thermal decomposition temperature of the second fixed resin layer is lowered by irradiation of active energy rays. In the case of a thermally decomposable fixing resin and irradiating active energy rays in the second exfoliation step, the thermal decomposing temperature before irradiation with active energy rays) or thermal softening temperature is the first exfoliation step. The layered body is heated by the heat generated by the light absorber and the temperature higher than the temperature reached by the photothermal conversion layer is used. Thereby, in the first peeling step, the first fixed resin layer is heated to a temperature higher than the thermal decomposition temperature of the thermally decomposable resin included in the photothermal conversion layer of the first fixed resin layer, and the first Since the second fixing resin layer is heated to a temperature lower than the thermal decomposition temperature or thermal softening temperature of the second fixing resin layer, the first supporting substrate can be selectively peeled off and the second It is possible to prevent the support substrate from being peeled off or displaced.

  Moreover, when using the fixed resin layer which has a photothermal conversion layer as both the 1st fixed resin layer and the 2nd fixed resin layer, you may use the photothermal conversion layer of the same composition, or the photothermal conversion of another composition. Layers may be used.

  Further, as the first fixed resin layer, a fixed resin layer having a photothermal conversion layer is used, and as the second fixed resin layer, a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays, Or when using the fixed resin layer which has a photothermal conversion layer, when an active energy ray is irradiated from the 1st support base material side at the 1st exfoliation process, a semiconductor wafer turns into the 2nd fixed resin layer. Since the active energy ray is prevented from being irradiated, only the photothermal conversion layer of the first fixed resin layer is irradiated with the active energy ray.

When using a fixed resin layer having a photothermal conversion layer having the same composition, only the photothermal conversion layer in the first fixed resin layer can be obtained by selectively irradiating the photothermal conversion layer of the first fixed resin layer with active energy rays. Voids can be formed.
Moreover, when using the fixed resin layer which has the photothermal conversion layer of another composition, for example, by adjusting the thermal decomposition temperature of the thermally decomposable resin in the photothermal conversion layer, the kind and blending amount of the light absorbent, A void can be selectively formed only in the photothermal conversion layer in the fixed resin layer.

  Moreover, when using both a solvent-soluble fixed resin layer as the first fixed resin layer and the second fixed resin layer, a solvent-soluble fixed resin layer having the same composition may be used, or a different composition may be used. A solvent-soluble fixed resin layer may be used.

When using a solvent-soluble fixed resin layer having the same composition, only the first fixed resin layer can be dissolved by selectively supplying the solvent only to the first fixed resin layer.
When a solvent-soluble fixed resin layer having another composition is used, for example, the solubility of the solvent-soluble resin contained in the first fixed resin layer with respect to the solvent is determined based on the solvent contained in the second fixed resin layer. By making it higher than the solubility of the soluble resin in the solvent, the first fixed resin layer can be selectively dissolved in the solvent in the first peeling step.

Hereinafter, although the preferable example of this invention is demonstrated, this invention is not limited to these examples. Additions, omissions, substitutions, and other modifications can be made without departing from the spirit of the present invention.
First, five embodiments using a thermally decomposable fixed resin layer as the first fixed resin layer, which is a preferred form in the method for manufacturing an electronic device of the present invention, will be described in detail.

<First Embodiment>
Hereinafter, the manufacturing method of the electronic device according to the first embodiment of the present invention includes a thermally decomposable fixing resin in which a thermal decomposition temperature is lowered by irradiation with active energy rays as a first fixing resin layer and a second fixing resin layer. In this embodiment, a layer is used, and thermal decomposition is performed after first irradiating active energy rays in the first peeling step, and thermal decomposition is performed after first irradiating active energy rays in the second peeling step.

(Step of obtaining the first laminate)
First, as shown in FIG. 1 (a), a thermally decomposable first fixed resin layer 10 whose thermal decomposition temperature is lowered by irradiation with active energy rays is formed on the first support substrate 1. In the first embodiment, active energy rays are first irradiated from the first support base material 1 side in the first peeling step described later, and from the second support base material 4 side in the second peeling step. In order to irradiate the active energy ray, a support substrate that transmits the active energy ray is used as the first support substrate 1 and the second support substrate 4.

  Here, the first support base material 1 and the second support base material 4 that transmit active energy rays are not particularly limited, and examples thereof include a hard substrate that transmits ultraviolet light and laser light. Specifically, a glass substrate etc. are mentioned.

  In the first embodiment shown in FIG. 1, after the first fixed resin layer 10 is provided on the first support base 1, the functional surfaces of the first fixed resin layer 10 and the semiconductor wafer 2 are bonded. However, after the first fixed resin layer 10 is provided on the functional surface side of the semiconductor wafer 2, the first fixed resin layer 10 and the first support substrate 1 may be attached. In addition, about this point, it is the same also about this invention, and is the same also about other embodiments, such as 2nd-25th embodiment of this invention.

In addition, as a method for providing the first fixed resin layer 10, for example, a known method such as a spin coating method, a spray method, a printing method, a film transfer method, a slit coating method, or a scan coating method can be used. There is an advantage that no significant capital investment is required.
As a method of providing the first fixed resin layer 10, a spin coating method is preferable, and a uniform and flat thin film can be formed.

Next, the thermally decomposable fixed resin layer used in the first fixed resin layer 10 and the second fixed resin layer 20 of the first embodiment will be described.
The first fixed resin layer 10 and the second fixed resin layer 20 of the first embodiment are thermally decomposable fixed resin layers whose thermal decomposition temperature is lowered by irradiation with active energy rays, and are irradiated with active energy rays. Thus, it is composed of a thermally decomposable resin composition whose thermal decomposition temperature is lowered. For example, the first fixed resin layer 10 and the second fixed resin layer 20 are composed of a photoacid generator or photobase generator that generates an acid upon irradiation with active energy rays, and an acid or light generated by the photoacid generator. It is a fixed resin layer containing a thermally decomposable resin whose thermal decomposition temperature is lowered by a base generated by a base generator. In addition, the thermally decomposable resin whose thermal decomposition temperature is lowered by the acid generated by the photoacid generator or the base generated by the photobase generator is also referred to as a thermally decomposable resin (1).

In the thermally decomposable resin (1) contained in the first fixed resin layer 10, the difference between the 95% weight reduction temperature and the 5% weight reduction temperature is 5 ° C. ≦ (95% weight reduction temperature) − (5% weight). A thermally decomposable resin composition containing a thermally decomposable resin satisfying (decrease temperature) ≦ 100 ° C. is preferred. Further, in the thermally decomposable resin (1) contained in the second fixed resin layer 20, the difference between the 95% weight reduction temperature and the 5% weight reduction temperature is 5 ° C. ≦ (95% weight reduction temperature) − (5 % Degradable temperature) ≦ 100 ° C. is preferred.
The 5% weight reduction temperature, 50% weight reduction temperature and 95% weight reduction temperature of the thermally decomposable resin are measured with a TG / DTA apparatus (manufactured by Seiko Instruments Inc.) by weighing approximately 10 mg of the thermally decomposable resin. Atmosphere: nitrogen, heating rate: 5 ° C./min). Moreover, that the thermal decomposition temperature of a thermally decomposable resin falls means that the 5% weight reduction temperature of a thermally decomposable resin falls.

  The thermal decomposable fixing resin layer contains a thermal decomposable resin in which the difference between the 95% weight reduction temperature and the 5% weight reduction temperature is specified in a range of 5 ° C. or more and 100 ° C. or less, thereby causing thermal decomposition. The temperature range required for the thermal decomposition of the conductive fixing resin layer is narrow, the time required for the thermal decomposition can be shortened, and damage to the semiconductor wafer can be suppressed. In addition, the semiconductor wafer after processing can be easily detached and the fixed resin layer hardly remains on the semiconductor wafer. In addition, since a wide temperature range that can be stably used can be secured, it is possible to use the substrate for various processing steps while temporarily fixing the supporting base material to the semiconductor wafer. In addition, since the surface can be formed as a thin film on a support base having a smooth surface and sufficient accuracy, the connection terminal is formed on the semiconductor wafer, and further, the processing accuracy such as obtaining a joined body of the semiconductor wafer and the semiconductor device is high. There is an effect.

  Here, the stable temperature range is a temperature range in which the semiconductor wafer can be stably held without decomposition of the thermally decomposable fixing resin layer. Since the fixed resin layer according to the first embodiment can secure a wide temperature range, it can be used for a back surface processing step that requires heating while temporarily fixing the semiconductor wafer to the support base. Become. Therefore, it has the advantage that a different process can be performed continuously.

  Moreover, it is preferable that the said heat-decomposable resin (1) has a 5% weight loss temperature of 50 ° C. or higher. According to this, it is possible to obtain an effect that the fixed resin layer is not thermally decomposed during an electronic device manufacturing process, such as forming an electrode on a semiconductor wafer and obtaining a joined body of the semiconductor wafer and the semiconductor device, which will be described later. .

  Moreover, it is preferable that the 50% weight reduction | decrease temperature is 400 degrees C or less. According to this, it is possible to obtain an effect that it is possible to prevent the semiconductor wafer from being damaged by the thermal history in the peeling step described later.

  Here, the thermally decomposable resin (1) in which the difference between the 95% weight reduction temperature and the 5% weight reduction temperature is specified in a range of 5 ° C. or more and 100 ° C. or less is not limited, For example, it can be obtained by selecting a resin having a bond hydrolyzed by an acid or base in the main chain and having a low bond strength of the main chain and adjusting the molecular weight and the like.

  The thermal decomposition temperature is lowered by the acid generated by the photoacid generator or the base generated by the photobase generator, and the difference between the 95% weight reduction temperature and the 5% weight reduction temperature is in the range of 5 ° C to 100 ° C. The thermally decomposable resin (1) that can be defined is not particularly limited. For example, polycarbonate resin, polyester resin, polyamide resin, polyether resin, polyurethane resin, (meth) Examples include acrylate resins. By applying these thermally decomposable resins, it is possible to prevent thermal decomposition of the fixed resin layer during an electronic device manufacturing process such as a step of obtaining a laminate and a semiconductor wafer back surface processing step, which will be described later, and further peeling The thermal decomposition time of the fixed resin layer in the process can be shortened.

  Among these thermally decomposable resins (1), the thermal decomposition of the fixed resin layer during the electronic device manufacturing process can be effectively prevented, and the thermal decomposition time of the fixed resin layer in the peeling process can be effectively reduced. Polycarbonate resins are preferred because they can be shortened.

When the thermally decomposable resin (1) is a polycarbonate resin, the decomposition time at a 5% weight loss temperature is preferably 1 minute or more and 60 minutes or less.
By setting the thermal decomposition time to the above lower limit or more, rapid thermal decomposition of the fixed resin layer can be suppressed, and the pyrolyzed gas can be exhausted by the exhaust device. It is possible to prevent contamination of the equipment for manufacturing. Moreover, since the time required for thermal decomposition in the peeling step can be shortened by setting it to the above upper limit value or less, the productivity of the electronic device can be improved.

  The polycarbonate-based resin is not particularly limited. For example, propylene carbonate, ethylene carbonate, 1,2-butylene carbonate, 1,3-butylene carbonate, 1,4-butylene carbonate, cis-2,3-butylene carbonate, trans-2,3-butylene carbonate, α, β-isobutylene carbonate, α, γ-isobutylene carbonate, cis-1,2-cyclobutylene carbonate, trans-1,2-cyclobutylene carbonate, cis-1,3-cyclo Butylene carbonate, trans-1,3-cyclobutylene carbonate, hexene carbonate, cyclopropene carbonate, cyclohexene carbonate, (methylcyclohexene carbonate), (vinylcyclohexene) Carbonate), dihydronaphthalene carbonate, hexahydrostyrene carbonate, cyclohexane propylene carbonate, styrene carbonate, (3-phenylpropylene carbonate), (3-trimethylsilyloxypropylene carbonate), (3-methacryloyloxypropylene carbonate), perfluoropropylene Examples thereof include polycarbonate, norbornene carbonate, and polycarbonate resins having a skeleton of a combination thereof.

  More specifically, examples of the polycarbonate resin include polypropylene carbonate / polycyclohexene carbonate copolymer, poly [(oxycarbonyloxy-1,1,4,4-tetramethylbutane) -alt- (oxycarbonyl). Oxy-5-norbornene-2-endo-3-endo-dimethane)], poly [(oxycarbonyloxy-1,4-dimethylbutane) -alt- (oxycarbonyloxy-5-norbornene-2-endo-3- endo-dimethane)], poly [(oxycarbonyloxy-1,1,4,4-tetramethylbutane) -alt- (oxycarbonyloxy-p-xylene)], and poly [(oxycarbonyloxy-1,4) -Dimethylbutane) -alt- (oxycarbonyloxy-p- Siren)], polycyclohexene carbonate / polynorbornene carbonate copolymer, and the like.

The polycarbonate resin preferably has a weight average molecular weight (Mw) of 1,000 to 1,000,000, and more preferably 5,000 to 800,000.
By setting the weight average molecular weight to the above lower limit or more, when forming the fixed resin layer on the semiconductor wafer or the support substrate, the wettability of the fixed resin layer to the semiconductor wafer or the support substrate is improved, The effect of improving the film formability can be obtained. Moreover, the effect of improving the compatibility with the various components constituting the fixed resin layer, the solubility in various solvents, and the thermal decomposability of the fixed resin layer in the peeling step is obtained by setting the upper limit value or less. be able to.
In addition, a weight average molecular weight (Mw) is measured by calculating as polystyrene conversion value by GPC (gel permeation chromatogram) using THF (tetrahydrofuran) as a solvent. The wettability refers to the ease of spreading of the solution when a resin solution is applied to a solid surface such as a semiconductor wafer or a support substrate.

  The polymerization method of the polycarbonate-based resin is not particularly limited. For example, a known polymerization method such as a phosgene method (solvent method) or a transesterification method (melting method) is used.

  The content of the thermally decomposable resin (1) is preferably 10% by weight to 100% by weight, more preferably 30% by weight to 100% by weight of the thermally decomposable fixed resin layer. By making content of a thermally decomposable resin (1) more than the said lower limit, it can prevent that a fixed resin layer remains on a semiconductor wafer or a support base material after the peeling process mentioned later.

  As the thermally decomposable resin (1), a polypropylene carbonate polymer, a 1,4-polybutylene carbonate polymer, and a polycyclohexene carbonate / polynorbornene carbonate copolymer are particularly preferable.

  In addition, the thermally decomposable fixed resin layer containing the thermally decomposable resin (1) includes a photoacid generator that generates an acid or a photobase generator that generates a base by applying energy by irradiation of active energy rays. Including. Thereby, the thermal decomposition temperature of the said thermally decomposable resin (1) can be reduced.

The photoacid generator is not particularly limited, but tetrakis (pentafluorophenyl) borate-4-methylphenyl [4- (1-methylethyl) phenyl] iodonium (DPI-TPFPB), tris (4-t-butyl) Phenyl) sulfonium tetrakis- (pentafluorophenyl) borate (TTBPS-TPFPB), tris (4-t-butylphenyl) sulfonium hexafluorophosphate (TTBPS-HFP), triphenylsulfonium triflate (TPS-Tf), bis (4 -Tert-butylphenyl) iodonium triflate (DTBPI-Tf), triazine (TAZ-101), triphenylsulfonium hexafluoroantimonate (TPS-103), triphenylsulfonium bis (perf) Olomethanesulfonyl) imide (TPS-N1), di- (pt-butyl) phenyliodonium, bis (perfluoromethanesulfonyl) imide (DTBPI-N1), triphenylsulfonium, tris (perfluoromethanesulfonyl) methide ( TPS-C1), di- (pt-butylphenyl) iodonium tris (perfluoromethanesulfonyl) methide (DTBPI-C1), tris {4-[(4-acetylphenyl) thio] phenyl} sulfonium tris ( Perfluoromethanesulfonyl) methide and combinations of two or more thereof.

  Among these, tetrakis (pentafluorophenyl) borate-4-methylphenyl [4- (1-methylethyl) is particularly preferable because the thermal decomposition temperature of the thermally decomposable resin (1) can be efficiently lowered. Phenyl] iodonium (DPI-TPFPB) is preferred.

  The photobase generator is not particularly limited, and examples thereof include 5-benzyl-1,5-diazabicyclo (4.3.0) nonane and 1- (2-nitrobenzoylcarbamoyl) imidazole. Among these, 5-benzyl-1,5-diazabicyclo (4.3.0) nonane and 5-benzyl-1 are particularly preferable because the thermal decomposition temperature of the thermally decomposable resin (1) can be efficiently lowered. , A derivative having a 5-diazabicyclo (4.3.0) nonane skeleton is preferred.

  The content of the photoacid generator or photobase generator is preferably 0.01 to 50% by weight, more preferably 0.1 to 30% by weight of the thermally decomposable fixing resin layer. By setting it to the above lower limit value or more, it becomes possible to stably lower the thermal decomposition temperature of the thermally decomposable resin (1), and by setting it to the upper limit value or less, the fixed resin layer remains on the semiconductor wafer or the support substrate. As a result, it is possible to effectively prevent the residual.

  As a combination of the polycarbonate resin, the photo acid generator or the photo base generator, the polycarbonate resin is particularly preferably a polypropylene carbonate polymer, a 1,4-polybutylene carbonate polymer, a neopentyl carbonate polymer, It is a cyclohexene carbonate / norbornene carbonate copolymer, and tetrakis (pentafluorophenyl) borate-4-methylphenyl [4- (1-methylethyl) phenyl] iodonium (DPI-TPFPB) is used as a photoacid generator or photobase generator. ), Tris {4-[(4-acetylphenyl) thio] phenyl} sulfonium tris (perfluoromethanesulfonyl) methide.

  In this case, the content of the polycarbonate-based resin is 30 to 100% by weight of the thermally decomposable fixed resin layer, and the content of the photoacid generator or photobase generator is 0.1 of the thermally decomposable fixed resin layer. The weight average molecular weight (Mw) of the polycarbonate resin is preferably 5,000 to 800,000. As a result, wettability to a semiconductor wafer or support, film formability of a thermally decomposable fixed resin layer, compatibility with various components constituting the thermally decomposable fixed resin layer, solubility in various solvents, and The thermal decomposability of the fixed resin layer in the peeling process can be ensured.

  The polycarbonate resin forms a structure that facilitates thermal cutting of the main chain of the polycarbonate resin in the presence of the photoacid generator or photobase generator, or the polycarbonate resin itself is easily heated. It is considered that the thermal decomposition temperature is lowered because a thermal ring closure structure that decomposes (thermal ring closure reaction) is formed.

The following reaction formula (1) shows the mechanism of thermal cleavage of the main chain of the polypropylene carbonate resin and formation of a thermal ring closure structure.
First, H ⁺ derived from the photoacid generator protonates the carbonyl oxygen of the polypropylene carbonate resin, and further shifts the polar transition state to generate unstable tautomeric intermediates [A] and [B].
Then, in the case of the thermal cutting of the main chain, an intermediate [A] is fragmented as acetone and CO _2.
In the case of formation of a thermal ring closure structure (a or b), intermediate [B] produces propylene carbonate, which is fragmented as CO ₂ and propylene oxide.

  For the formation of the thermally decomposable fixing resin layer, the thermally decomposable resin (1) and the photoacid generator or photobase generator and other components constituting the thermally decomposable fixing resin layer are dissolved in a solvent. Alternatively, a resin composition containing a solvent is prepared by dispersion, and the resin containing the obtained solvent is formed into a film on a support substrate or a semiconductor wafer, and the solvent is removed by drying, whereby a thermally decomposable resin is obtained. A fixing resin can be formed. Solvents are not particularly limited, but hydrocarbons such as mesitylene, decalin, mineral spirits, alcohols / ethers such as anisole, propylene glycol monomethyl ether, dipropylene glycol methyl ether, diethylene glycol monoethyl ether, diglyme, etc. , Esters / lactones such as ethylene carbonate, ethyl acetate, N-butyl acetate, ethyl lactate, ethyl 3-ethoxypropionate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene carbonate, γ-butyrolactone, cyclopenta Non-, cyclohexanone, methyl isobutyl ketone, ketones such as 2-heptanone, amide / lactams such as N-methyl-2-pyrrolidinone, etc. . When the thermally decomposable resin composition contains a solvent, it becomes easy to adjust the viscosity of the thermally decomposable resin composition, and a thin film of a thermally decomposable fixed resin layer is formed on a semiconductor wafer or a supporting substrate. Easy to do.

  Although content of the said solvent is not specifically limited, It is preferable that it is 5-98 weight% in the resin composition containing a solvent, and it is especially preferable that it is 10-95 weight%.

  The thermally decomposable fixing resin layer has a function of developing or increasing the reactivity of the photoacid generator or photobase generator with respect to an active energy ray of a specific type or wavelength together with the photoacid generator or photobase generator. It may contain a sensitizer which is a component it has.

  The sensitizer is not particularly limited. For example, anthracene, phenanthrene, chrysene, benzpyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthen-9-one, 2-isopropyl-9H -Thioxanthen-9-one, 4-isopropyl-9H-thioxanthen-9-one, 1-chloro-4-propoxythioxanthone, and mixtures thereof. The content of such a sensitizer is preferably 100 parts by weight or less and more preferably 20 parts by weight or less with respect to 100 parts by weight of the photoacid generator or photobase generator described above.

  The thermally decomposable fixing resin layer may contain an antioxidant. The antioxidant has a function of preventing generation of undesirable acid and natural oxidation of the thermally decomposable fixed resin layer.

  The antioxidant is not particularly limited. For example, Ciba IRGANOX (registered trademark) 1076 or Ciba IRGAFOS (registered trademark) 168 available from Ciba Fine Chemicals of Tarrytown, New York is preferably used. It is done.

  In addition, as other antioxidants, for example, Ciba Irganox (registered trademark) 129, Ciba Irganox 1330, Ciba Irganox 1010, Ciba Cyanox (registered trademark) 1790, Ciba Irganox 3114, Ciga 31, Ciga etc. can be used.

  The content of the antioxidant is preferably 0.1 to 10 parts by weight and more preferably 0.5 to 5 parts by weight with respect to 100 parts by weight of the thermally decomposable resin (1).

  Further, the thermally decomposable fixing resin layer may contain additives such as acrylic, silicone, fluorine and vinyl leveling agents, silane coupling agents, diluents and the like as required.

The silane coupling agent is not particularly limited. For example, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltri Methoxysilane, N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, N-2- (aminoethyl) -3-aminopropyl Triethoxy 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, bis (triethoxy Propyl) tetrasulfide, 3-isocyanatopropyltriethoxysilane and the like, and may be used alone or in admixture of two or more.
When the thermally decomposable fixing resin layer contains a silane coupling agent, it is possible to improve the adhesion to the semiconductor wafer or the support substrate.

Examples of the diluent include, but are not limited to, cycloether compounds such as cyclohexene oxide and α-pinene oxide, and aromatic cycloethers such as [methylenebis (4,1-phenyleneoxymethylene)] bisoxirane. And cycloaliphatic vinyl ether compounds such as 1,4-cyclohexanedimethanol divinyl ether.
When the thermally decomposable resin composition used for forming the thermally decomposable fixed resin layer contains a diluent, the fluidity of the thermally decomposable resin composition can be improved, and the thermally decomposable resin composition It becomes possible to improve the wettability of an object to a semiconductor wafer or a support substrate.

  Next, as shown in FIG. 1 (b), the first fixed resin layer 10 and the semiconductor wafer 2 are bonded to each other with the first fixed resin layer 10 and the semiconductor wafer 2 facing each other. A first laminated body 60 is obtained in which the supporting substrate 1 / first fixed resin layer 10 / semiconductor wafer 2 are laminated in this order.

  The method for adhering the first fixed resin layer 10 and the semiconductor wafer 2 is not particularly limited, and examples thereof include a vacuum press device and a wafer bonder.

The conditions for adhering the first fixed resin layer 10 and the semiconductor wafer 2 are not particularly limited, but the temperature is 50 to 350 ° C., the pressure is 0.01 to 3 MPa, and the time is 10 to 600. It can be performed under the conditions of a second, temperature: 70 to 300 ° C., pressure: 0.03 to 2 MPa, time: preferably 20 to 500 seconds, temperature: 100 to 250 ° C., pressure 0. It is particularly preferable that the sticking be performed under the conditions of 05: to 1 MPa and time: 30 to 400 seconds. Thereby, since it is possible to effectively prevent bubbles from being generated between the first support base 1 and the semiconductor wafer 2, the thickness variation of the semiconductor wafer 2 after the semiconductor wafer 2 is ground (described later). Can be reduced.
Furthermore, it is preferable to stick the first fixed resin layer 10 and the semiconductor wafer 2 under a reduced pressure, and bubbles generated between the first support base 1 and the semiconductor wafer 2 can be more effectively prevented. .

(Semiconductor wafer backside processing process)
Next, as shown in FIG. 1 (c), a semiconductor wafer back surface processing step for grinding the back surface of the semiconductor wafer 2 and forming the electrodes 3 is performed.

  The method for performing the back surface grinding of the semiconductor wafer 2 is not particularly limited, but the back surface grinding of the semiconductor wafer 2 can be performed by a commercially available back grinding apparatus. In the first embodiment, since the functional surface of the semiconductor wafer 2 is protected by the first fixed resin layer 10, it is possible to effectively prevent dust and moisture from adhering to the functional surface during back grinding. it can.

  The thickness of the semiconductor wafer 2 is not particularly limited, but is preferably 10 to 100 μm, and particularly preferably 20 to 80 μm. By setting the thickness of the semiconductor wafer 2 within the above range, the thickness of the electronic device can be reduced.

  The electrode on the back surface of the semiconductor wafer 2 is not particularly limited, but is preferably formed of a metal material such as solder, copper, gold, silver, nickel, etc., and can be bonded to a semiconductor device such as a semiconductor chip. It is particularly preferable to form with excellent solder bumps and gold stud bumps. The solder bumps and gold stud bumps can be produced from the solder bumps and gold stud bumps by a known method. Moreover, it is preferable that solder is formed on at least one of the electrodes of the semiconductor wafer and the semiconductor device such as the semiconductor chip. As a result, the junction of the semiconductor wafer / semiconductor chip stack can be made of an alloy of solder and dissimilar metal, so that the electrical characteristics and mechanical characteristics of the junction of the semiconductor wafer / semiconductor device can be improved.

  Further, in the semiconductor wafer back surface processing step, other processes such as forming TSV (Through Silicon Via) may be performed in addition to grinding the back surface of the semiconductor wafer 2 and further forming the electrodes 3.

(Step of obtaining the second laminate)
Next, as shown in FIG. 1 (d), a second fixed resin layer 20 having the same composition as that of the first fixed resin layer 10 is formed on the back surface of the semiconductor wafer 2 and the second support base 4. The first supporting base material 1 / first fixing resin layer 10 / semiconductor wafer 2 / second fixing resin layer 20 / second supporting base material 4 are laminated in this order. The laminate 70 is obtained. The composition of the first fixed resin layer 10 and the composition of the second fixed resin layer 20 may be different.

  The method for adhering the back surface of the semiconductor wafer 2 and the second support base material 4 through the second fixed resin layer 20 is not particularly limited, but the semiconductor may be formed using a vacuum press device, a wafer bonder, or the like. The back surface of the wafer 2 and the second support base 4 can be attached via the second fixed resin layer 20.

  In addition, the conditions for adhering the back surface of the semiconductor wafer 2 and the second support base material 4 through the second fixed resin layer 20 are not particularly limited, but temperature: 50 to 350 ° C., pressure : 0.01 to 3 MPa, time: 10 to 600 seconds, temperature: 70 to 300 ° C., pressure: 0.03 to 2 MPa, time: 20 to 500 seconds. It is particularly preferable to apply the paste under the conditions of temperature: 100 to 250 ° C., pressure: 0.05 to 1 MPa, and time: 30 to 400 seconds. Thereby, since it is possible to effectively prevent bubbles from being generated between the second support base 4 and the semiconductor wafer 2, the thickness variation of the semiconductor wafer 2 after the semiconductor wafer 2 is ground (described later). Can be reduced.

  Here, as a manufacturing method of the second laminated body 70, the second fixed resin layer 20 may be formed in advance on the back surface of the semiconductor wafer 2, and the second support base material 4 may be adhered. Two fixed resin layers 20 may be formed in advance on the second support base 4 and the back surface of the semiconductor wafer 2 may be adhered. In addition, about this point, it is the same also about this invention, and is the same also about other embodiments, such as 2nd-25th embodiment of this invention.

(First peeling step)
Next, as shown to a figure (1-e), an active energy ray is irradiated from the 1st support base material 1 side.

  Examples of the active energy ray include near-ultraviolet rays and far-infrared rays such as g-line, i-line, and excimer laser.

  Thus, the thermal decomposition temperature of the 1st fixed resin layer 10 can be lowered | hung by irradiating an active energy ray from the 1st support base material 1 side previously. For example, when the first fixed resin layer 10 is a thermally decomposable fixed resin containing a photoacid generator and a thermally decomposable resin (1), active energy rays are irradiated to the first fixed resin layer 10. Thus, the photoacid generator generates an acid in the first fixed resin layer 10, and the acid generated by the photoacid generator causes the heat decomposable resin (1) contained in the first fixed resin layer 10. Since the thermal decomposition temperature decreases, the thermal decomposition temperature of the first fixed resin layer 10 decreases. On the other hand, since the semiconductor wafer 2 has an action of shielding the irradiation of the active energy ray to the second fixed resin layer 20, the thermal decomposition temperature of the second fixed resin layer 20 does not decrease. As described above, by irradiating active energy rays from the first support base material 1 side, the thermal decomposition temperature of the first fixed resin layer 10 is made lower than the thermal decomposition temperature of the second fixed resin layer 20. be able to.

  Next, as shown in FIG. 2 (a), the first support substrate 1 is peeled from the second laminate 70 by heating the second laminate 70.

  Specifically, by heating to a temperature higher than the thermal decomposition temperature of the first fixed resin layer 10 after irradiation with active energy rays and lower than the thermal decomposition temperature of the second fixed resin layer 20, Only one fixed resin layer 10 is selectively thermally decomposed, and the first support substrate 1 is peeled off.

  The method of peeling the first support substrate 1 is not particularly limited, but a method of detaching in the direction perpendicular to the back surface of the semiconductor wafer 2 while heating, or the back surface of the semiconductor wafer 2 is performed. And a method of detaching by sliding in the horizontal direction, a method of floating the first support substrate 1 from one side of the first support substrate 1, and the like.

  In 1st Embodiment, the heating temperature of the 2nd laminated body in a 1st peeling process shall be T1 (degreeC), and 5% weight of the thermally decomposable resin (1) contained in the 2nd fixed resin layer Assuming that the decrease temperature is T2 (° C.), “T1 <T2”, preferably “T1 + 20 <T2”. At the time of the first peeling step, the second fixed resin layer is not yet irradiated with active energy, so T2 is included in the second fixed resin layer before being irradiated with active energy rays. This is the thermal decomposition temperature of the thermal decomposition resin (1).

  After the first peeling step, the first fixed resin layer 10 remaining on the first support substrate 1 or the semiconductor wafer 2 may be removed as necessary. A method for removing the remaining first fixed resin layer 10 is not particularly limited, and examples thereof include plasma treatment, chemical immersion treatment, polishing treatment, and heat treatment.

  In the method for manufacturing the electronic device according to the first embodiment, since the first fixing resin layer 10 is thermally decomposed to have a low molecular weight, the first support substrate 1 can be detached without stress. There is an effect that the support base material 1 and the semiconductor wafer 2 are not easily damaged. Further, the component of the first fixed resin layer 10 having a reduced molecular weight is volatilized during heating, and the first fixed resin layer 10 is less likely to remain on the first support base 1 and the semiconductor wafer 2. Play. Therefore, there is an advantage that a post-process such as cleaning can be simplified and handling properties are improved.

(Step of obtaining a third laminate)
Next, as shown in FIG. 2B, the second support base 4 / second fixed resin layer 20 / semiconductor wafer 2 are mounted by mounting a plurality of semiconductor devices 100 on the functional surface of the semiconductor wafer 2. / A third stacked body 80 in which the semiconductor devices 100 are stacked in this order is obtained.

  Here, the semiconductor device 100 is not particularly limited, and examples thereof include a semiconductor chip. The semiconductor device 100 may be a single layer or a multi-layer semiconductor device 100 in which semiconductor chips are stacked in advance.

  A method for mounting the plurality of semiconductor devices 100 on the functional surface of the semiconductor wafer 2 is not particularly limited. For example, a surface of the semiconductor device 100 that faces the functional surface of the semiconductor wafer 2 is previously made of solder, gold, or the like. There is a method of mounting by forming bumps made of a metal material and bonding the bumps 3 to the electrodes 3 on the functional surface of the semiconductor wafer 2.

In order to more specifically describe a method of mounting a plurality of semiconductor devices 100 on the functional surface of the semiconductor wafer 2, a case where a semiconductor chip is used as the semiconductor device 100 will be described.
First, a semiconductor chip having solder bumps on the surface facing the semiconductor wafer is prepared. Next, after positioning the electrodes (gold electrodes) on the functional surface of the semiconductor wafer and the solder bumps, a solder reflow process is performed to bond the solder bumps to the gold electrodes. In the solder reflow process, in the first embodiment, the second fixed resin layer 20 before being irradiated with the active energy ray has a high thermal decomposition temperature because it is not irradiated with the active energy ray, and is difficult to be thermally decomposed. The semiconductor wafer 2 can be prevented from being displaced, and the semiconductor device 100 can be mounted reliably. Next, the semiconductor chip can be mounted by filling the gap between the semiconductor chip and the semiconductor wafer with a thermosetting liquid sealing material and further thermosetting the liquid sealing material.

  As another method for mounting the semiconductor chip, a resin composition layer made of a thermosetting resin having a flux function is formed on the surface of the semiconductor chip having the solder bumps. The flux function refers to a function that facilitates joining of metals by dissolving and removing dirt such as an oxide film on a metal surface such as a solder bump. The method of forming the resin composition layer made of the thermosetting resin having the flux function is not particularly limited, and the resin composition made of the thermosetting resin having the liquid flux function is dispensed, printed, or spin coated. And a method of laminating a resin composition made of a thermosetting resin having a film-like flux function. Next, the solder bump and the gold electrode can be joined by aligning, pressurizing and heating the solder bump and the gold electrode. At this time, the resin composition layer made of a thermosetting resin having a flux function is reliably formed by forming a resin composition made of a thermosetting resin having a flux function in order to remove the oxide film on the surface of the solder bump. The solder bump and the gold electrode can be bonded to each other. After joining the solder bump and the gold electrode, the resin composition layer made of a thermosetting resin having a flux function is filled around the solder bump and the gold electrode, and therefore made of a thermosetting resin having a flux function. The semiconductor chip mounting is completed by thermosetting the resin composition layer.

  In the above description of the first embodiment, the embodiment in which the solder bump of the semiconductor chip and the gold electrode of the semiconductor wafer are bonded has been described. However, the present invention is not limited to this. Bonding of copper electrode and the like may be used.

(Sealing process)
Next, after the step of obtaining the third stacked body 80, a sealing step of sealing the semiconductor device 100 may be performed. By sealing the semiconductor device 100, moisture and dust can be prevented from being mixed, so that the reliability of the electronic device can be improved.

  A sealing material for sealing the semiconductor device 100 is not particularly limited, and may be a liquid sealing material or a solid sealing material. Further, the sealing method is not particularly limited, and transfer molding or compression molding may be used, but compression molding in which the third laminated body 80 hardly causes displacement is preferable.

(Second peeling step)
Next, an active energy ray is irradiated from the 2nd support base material 4 side.

  Examples of the active energy ray include near-ultraviolet rays and far-infrared rays such as g-line, i-line, and excimer laser.

  Next, as illustrated in FIG. 2C, the second support base 4 is peeled from the third stacked body 80 by heating the third stacked body 80. Thereby, the electronic device 200 in which the semiconductor device 100 is mounted on the functional surface of the semiconductor wafer 2 can be obtained.

  Specifically, the second fixed resin layer 20 is thermally decomposed by heating to a temperature higher than the thermal decomposition temperature of the second fixed resin layer 20 after being irradiated with the active energy rays, and the second The support base material 4 is peeled off.

  The method of peeling the second support substrate 4 is not particularly limited, but a method of detaching in the direction perpendicular to the back surface of the semiconductor wafer 2 while heating, or the back surface of the semiconductor wafer 2 is performed. And a method of detaching by sliding in the horizontal direction, a method of floating the second support substrate 4 from one side of the second support substrate 4 and the like.

  After the second peeling step, the second fixed resin layer 20 remaining on the second support base 4 or the semiconductor wafer 2 may be removed as necessary. A method for removing the remaining second fixed resin layer 20 is not particularly limited, and examples thereof include plasma treatment, chemical immersion treatment, polishing treatment, and heat treatment.

  In the method of manufacturing the electronic device according to the first embodiment, since the second fixed resin layer 20 is thermally decomposed to have a low molecular weight, the second support substrate can be detached without stress. The support base 4 and the semiconductor wafer 2 are not easily damaged. Further, the component of the second fixed resin layer 20 having a reduced molecular weight is volatilized during the heating, and the second fixed resin layer 20 is unlikely to remain on the second support base 4 and the semiconductor wafer 2. Play. Therefore, it is possible to simplify post-cleaning and other post-processes and to improve handling.

(Individualization process)
Next, as illustrated in FIG. 2D, an individualization process for separating the electronic device 200 in which the semiconductor device 100 is mounted on the semiconductor wafer can be performed.

  The method for dividing into individual pieces is not particularly limited. For example, after the second peeling step, the dicing tape may be attached to the back surface of the semiconductor wafer 2 and diced by a dicing apparatus. it can.

  In addition, as a method of separating the electronic device 200 on which the semiconductor device 100 is mounted, a semiconductor wafer is obtained after the step of obtaining the third stacked body 80 or after the sealing step when the semiconductor device 100 is sealed. 2 may be performed in a state of being bonded to the second support base 4. Thereby, the effect that a process can be simplified compared with the case where the dicing tape mentioned above is affixed and can be produced can be show | played.

  In the first embodiment, a semiconductor wafer back surface processing step (grinding of the semiconductor wafer back surface, formation of electrodes) and a step of obtaining the third stacked body 80 (mounting a semiconductor device on the functional surface of the semiconductor wafer) 2 can be performed with the first support substrate 1 or the second support substrate 4 being supported. By supporting with the first support substrate 1, it is not necessary to attach and remove the back grind tape having low heat resistance in the semiconductor wafer back surface processing step. In addition, by supporting the second support base 4 with the second support base 4, the support function for transporting the second support base 4 from the first peeling step to the step of obtaining the third laminate 80 and the semiconductor device 100. Can also be used as a support function when mounting the semiconductor chip 2 on the semiconductor wafer 2. As described above, the manufacturing process of the electronic device can be simplified, and the electronic device 300 can be manufactured with high yield and low cost.

<Second Embodiment>
The method for manufacturing an electronic device according to the second embodiment of the present invention uses a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation of an active energy ray as the first fixed resin layer, and the second fixed resin layer. A heat decomposable fixing resin layer is used as the resin layer, and in the first peeling step, the fixing resin layer is first irradiated with active energy rays, and then the fixing resin layer is thermally decomposed, and the second peeling step. Then, it is embodiment which performs thermal decomposition of a fixed resin layer, without irradiating an active energy ray to a fixed resin layer.

  The second embodiment is different from the first embodiment in that the active energy ray is not irradiated first in the second peeling step. Since the active energy ray is not irradiated in the second peeling step, the second fixed resin layer may be a fixed resin layer that is thermally decomposed by heating at a temperature equal to or higher than the thermal decomposition temperature. Therefore, even if it is a thermally decomposable fixed resin layer whose thermal decomposition temperature does not decrease even when irradiated with active energy rays, it is a thermally decomposable fixed resin layer whose thermal decomposition temperature decreases due to irradiation with active energy rays. Also good. In other words, in the second embodiment, the thermal decomposition temperature is lowered even when the second fixing resin layer is irradiated with the active energy ray, in which the thermal energy is not irradiated in the second peeling step and the second fixing resin layer is irradiated with the active energy ray. The heat-decomposable fixed resin layer is the same as that of the first embodiment except that the heat-decomposable fixed resin layer may be a heat-decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays. . Therefore, in the following description, the second embodiment will be described with reference to FIGS. 1 and 2 used in the description of the first embodiment.

(Step of obtaining the first laminate)
First, as shown in FIG. 1 (1-a), as in the first embodiment, the first thermally decomposable first thermal decomposition temperature is lowered on the first support substrate 1 by irradiation with active energy rays. The fixed resin layer 10 is formed. In the second embodiment, since the active energy rays are irradiated from the first supporting substrate 1 side first in the first peeling step, the first supporting substrate 1 is a supporting substrate that transmits the active energy rays. Is used. The process of obtaining the 1st laminated body of 2nd Embodiment is the same as the process of obtaining the 1st laminated body of 1st Embodiment.

  The 1st support base material 1 which permeate | transmits the active energy ray of 2nd Embodiment is the same as the 1st support base material 1 which permeate | transmits the active energy ray of 1st Embodiment.

  The first fixed resin layer 10 of the second embodiment is the same as the first fixed resin layer 10 of the first embodiment.

  Next, as shown in FIG. 1 (b), the first fixed resin layer 10 and the semiconductor wafer 2 are bonded to each other with the first fixed resin layer 10 and the semiconductor wafer 2 facing each other. A first laminated body 60 is obtained in which the supporting substrate 1 / first fixed resin layer 10 / semiconductor wafer 2 are laminated in this order.

  In the second embodiment, the method for adhering the first fixed resin layer 10 and the semiconductor wafer 2 is the same as the method for adhering the first fixed resin layer 10 and the semiconductor wafer 2 in the first embodiment. It is.

(Semiconductor wafer backside processing process)
Next, as shown in FIG. 1 (c), a semiconductor wafer back surface processing step for grinding the back surface of the semiconductor wafer 2 and forming the electrodes 3 is performed. The semiconductor wafer back surface processing step of the second embodiment is the same as the semiconductor wafer back surface processing step of the first embodiment.

(Step of obtaining the second laminate)
Next, as shown in FIG. 1 (d), a second fixed resin layer 20 having the same composition as that of the first fixed resin layer 10 is formed on the back surface of the semiconductor wafer 2 and the second support base 4. The first supporting base material 1 / first fixing resin layer 10 / semiconductor wafer 2 / second fixing resin layer 20 / second supporting base material 4 are laminated in this order. The laminate 70 is obtained. The process of obtaining the 2nd laminated body of 2nd Embodiment is a heat decomposable fixed resin layer or active energy ray which does not fall a thermal decomposition temperature even if it irradiates an active energy ray as a 2nd fixed resin layer. Except for using a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation, it is the same as the step of obtaining the second laminate of the first embodiment. The second support base 4 may be a support base that transmits active energy rays or a support base that does not transmit active energy rays, and the active energy rays of the first embodiment. And a support substrate that does not transmit active energy rays, such as a semiconductor wafer or a metal plate.

The thermally decomposable fixed resin layer used for the second fixed resin layer 20 of the second embodiment is a fixed resin layer that is thermally decomposed by heating at a temperature equal to or higher than the thermal decomposition temperature. Therefore, even if it is a thermally decomposable fixed resin layer whose thermal decomposition temperature does not decrease even when irradiated with active energy rays, it is a thermally decomposable fixed resin layer whose thermal decomposition temperature decreases due to irradiation with active energy rays. Also good. The thermally decomposable second fixed resin layer 20 of the second embodiment is made of a thermally decomposable resin composition, and is, for example, a fixed resin layer containing a thermally decomposable resin. The resin that is thermally decomposed by heating is also referred to as a thermally decomposable resin (2).
In the thermally decomposable resin (2) contained in the second fixed resin layer 20, the difference between the 95% weight reduction temperature and the 5% weight reduction temperature is 5 ° C. ≦ (95% weight reduction temperature) − (5% weight). A thermally decomposable resin having a decreasing temperature) ≦ 100 ° C. is preferred.

  The thermal decomposition of the second decomposable resin layer 20 of the second embodiment is such that the difference between the 95% weight reduction temperature and the 5% weight reduction temperature is specified in the range of 5 ° C to 100 ° C. By including the conductive resin (2), the temperature range required for the thermal decomposition of the thermally decomposable fixing resin layer is narrow, the time required for the thermal decomposition can be shortened, and damage to the semiconductor wafer can be suppressed. In addition, the semiconductor wafer after processing can be easily detached and the fixed resin layer hardly remains on the semiconductor wafer. Further, since a wide temperature range that can be stably used can be secured, it is possible to use the support base material in various processing steps while temporarily fixing the support base material to the semiconductor wafer. In addition, since the surface can be formed as a thin film on a support base having a smooth surface and sufficient accuracy, the connection terminal is formed on the semiconductor wafer, and further, the processing accuracy such as obtaining a joined body of the semiconductor wafer and the semiconductor device is high. There is an effect.

  Here, the stable temperature range is a temperature range in which the semiconductor wafer can be stably held without decomposition of the thermally decomposable fixing resin layer. Since the thermal decomposable second fixing resin layer of the second embodiment can secure a wide temperature range, the back surface processing step that requires heating while the semiconductor wafer is temporarily fixed to the support substrate. Can also be used. Therefore, it has the advantage that a different process can be performed continuously.

  Moreover, it is preferable that 5% weight reduction temperature is 50 degreeC or more as for the thermally decomposable resin (2) contained in the thermally decomposable 2nd fixed resin layer of 2nd Embodiment. According to this, it is possible to obtain an effect that the fixed resin layer is not thermally decomposed during an electronic device manufacturing process, such as forming an electrode on a semiconductor wafer and obtaining a joined body of the semiconductor wafer and the semiconductor device, which will be described later. .

  Moreover, it is preferable that the 50% weight reduction | decrease temperature of the thermally decomposable resin (2) contained in the thermally decomposable 2nd fixed resin layer of 2nd Embodiment is 400 degrees C or less. According to this, it is possible to obtain an effect that it is possible to prevent the semiconductor wafer from being damaged by the thermal history in the peeling step described later.

  Here, the difference between the 95% weight reduction temperature and the 5% weight reduction temperature contained in the thermally decomposable second fixed resin layer of the second embodiment is defined in a range of 5 ° C. or more and 100 ° C. or less. The thermally decomposable resin (2) is not limited, but can be obtained by adjusting the molecular weight of the resin having a low bond strength of the main chain.

Heat that can define the difference between the 95% weight reduction temperature and the 5% weight reduction temperature contained in the thermally decomposable second fixed resin layer of the second embodiment within a range of 5 ° C to 100 ° C. The decomposable resin (2) is not particularly limited. For example, a polycarbonate resin, a polyester resin, a polyamide resin, a polyimide resin, a polyether resin, a polyurethane resin, and a (meth) acrylate resin. Examples thereof include resins. By applying these thermally decomposable resins, thermal decomposition of the fixed resin layer during the electronic device manufacturing process can be prevented, and further, the thermal decomposition time of the fixed resin layer in the peeling process can be shortened.
Among the thermally decomposable resins (2) contained in the thermally decomposable second fixed resin layer of the second embodiment, the thermal decomposition of the fixed resin layer during the electronic device manufacturing process is effectively prevented. Furthermore, since the thermal decomposition time of the fixed resin layer in the peeling step can be effectively shortened, a polycarbonate resin is preferable.

When the thermally decomposable resin (2) contained in the thermally decomposable second fixed resin layer of the second embodiment is a polycarbonate resin, the thermal decomposition time at a 5% weight reduction temperature is 1 minute or more and 60 minutes. The following is preferable.
By setting the thermal decomposition time to the above lower limit or more, rapid thermal decomposition of the fixed resin layer can be suppressed, and the pyrolyzed gas can be exhausted by the exhaust device. It is possible to prevent contamination of the equipment for manufacturing. Moreover, since the time required for thermal decomposition in the peeling step can be shortened by setting it to the above upper limit value or less, the productivity of the electronic device can be improved.

  Although it does not specifically limit as polycarbonate-type resin contained in the 2nd heat decomposable resin layer of 2nd Embodiment, For example, propylene carbonate, ethylene carbonate, 1, 2- butylene carbonate, 1, 3- butylene Carbonate, 1,4-butylene carbonate, cis-2,3-butylene carbonate, trans-2,3-butylene carbonate, α, β-isobutylene carbonate, α, γ-isobutylene carbonate, cis-1,2-cyclobutylene carbonate , Trans-1,2-cyclobutylene carbonate, cis-1,3-cyclobutylene carbonate, trans-1,3-cyclobutylene carbonate, hexene carbonate, cyclopropene carbonate, cyclohexene carbonate, (Lohexene carbonate), (vinylcyclohexene carbonate), dihydronaphthalene carbonate, hexahydrostyrene carbonate, cyclohexane propylene carbonate, styrene carbonate, (3-phenylpropylene carbonate), (3-trimethylsiloxypropylene carbonate), (3-methacryloyl) Roxypropylene carbonate), perfluoropropylene carbonate, norbornene carbonate, and polycarbonate resins having a skeleton of a combination thereof.

  More specifically, examples of the polycarbonate-based resin contained in the thermally decomposable second fixed resin layer of the second embodiment include a polypropylene carbonate / polycyclohexene carbonate copolymer, poly [(oxycarbonyloxy- 1,1,4,4-tetramethylbutane) -alt- (oxycarbonyloxy-5-norbornene-2-endo-3-endo-dimethane)], poly [(oxycarbonyloxy-1,4-dimethylbutane) -Alt- (oxycarbonyloxy-5-norbornene-2-endo-3-endo-dimethane)], poly [(oxycarbonyloxy-1,1,4,4-tetramethylbutane) -alt- (oxycarbonyloxy -P-xylene)] and poly [(oxycarbonyloxy-1,4-dimethyl) Tan)-alt-(oxycarbonyl -p- xylene), polycyclohexene carbonate / polynorbornene carbonate copolymer, and the like.

The weight-average molecular weight (Mw) of the polycarbonate-based resin contained in the thermally decomposable second fixed resin layer of the second embodiment is preferably 1,000 to 1,000,000, and is preferably 5,000 to More preferably, it is 800,000.
By making the weight average molecular weight equal to or more than the above lower limit, the wettability of the fixed resin layer to the semiconductor wafer or the support substrate is improved when the fixed resin layer is formed on the semiconductor wafer or the support substrate. The effect of improving the film property can be obtained. Moreover, the effect of improving the compatibility with the various components constituting the fixed resin layer, the solubility in various solvents, and the thermal decomposability of the fixed resin layer in the peeling step is obtained by setting the upper limit value or less. be able to.

  The polymerization method of the polycarbonate resin contained in the thermally decomposable second fixed resin layer of the second embodiment is not particularly limited. For example, the phosgene method (solvent method) or the transesterification method ( And a known polymerization method such as a melting method).

  The content of the thermally decomposable resin (2) contained in the thermally decomposable second fixed resin layer of the second embodiment is 10% to 100% by weight of the thermally decomposable second fixed resin layer. More preferably, it is 30 to 100% by weight. By setting the content of the thermally decomposable resin (2) contained in the thermally decomposable second fixed resin layer of the second embodiment to be equal to or higher than the above lower limit value, the fixed resin layer becomes a semiconductor wafer or after the peeling step. It can prevent remaining on a support base material.

  As the thermally decomposable resin (2) contained in the thermally decomposable second fixed resin layer of the second embodiment, a polypropylene carbonate polymer, a 1,4-polybutylene carbonate polymer, and a polycyclohexene are particularly preferable. It is a carbonate / polynorbornene carbonate copolymer.

  Further, in the second embodiment, as the second fixed resin layer, a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiating the active energy ray used in the first embodiment is used. You can also.

  Moreover, the thermally decomposable second fixed resin layer of the second embodiment may contain an antioxidant. The antioxidant contained in the thermally decomposable second fixed resin layer of the second embodiment is the same as the antioxidant contained in the fixed resin layer of the first embodiment.

  The content of the antioxidant contained in the thermally decomposable second fixed resin layer of the second embodiment is the same as that of the thermally decomposable second fixed resin layer of the second embodiment. (2) It is preferable that it is 0.1-10 weight part with respect to 100 weight part, and it is more preferable that it is 0.5-5 weight part.

  In addition, the thermally decomposable second fixing resin layer according to the second embodiment is provided with additives such as acrylic, silicone, fluorine, and vinyl leveling agents, silane coupling agents, diluents, and the like as necessary. May be included. Leveling agents such as silicone-based, fluorine-based, and vinyl-based materials, silane coupling agents, diluents, and the like contained in the thermally decomposable second fixed resin layer of the second embodiment are the same as those in the first embodiment. These are the same as additives such as silicone-based, fluorine-based and vinyl-based leveling agents, silane coupling agents, diluents and the like contained in the fixed resin layer.

(First peeling step)
Next, as shown to a figure (1-e), an active energy ray is irradiated from the 1st support base material 1 side. Next, as shown in FIG. 2 (a), the second laminated body 70 is heated to peel the first support substrate 1 from the second laminated body 70. The first peeling process of the second embodiment is the same as the first peeling process of the first embodiment.

  In 2nd Embodiment, the heating temperature of the 2nd laminated body in a 1st peeling process shall be T1 (degreeC), and 5% weight of the thermally decomposable resin (2) contained in the 2nd fixed resin layer Assuming that the decrease temperature is T2 (° C.), “T1 <T2”, preferably “T1 + 20 <T2”.

  After the first peeling step, the first fixed resin layer 10 remaining on the first support substrate 1 or the semiconductor wafer 2 may be removed as necessary. A method for removing the remaining first fixed resin layer 10 is not particularly limited, and examples thereof include plasma treatment, chemical immersion treatment, polishing treatment, and heat treatment.

(Step of obtaining a third laminate)
Next, as shown in FIG. 2B, the second support base 4 / second fixed resin layer 20 / semiconductor wafer 2 are mounted by mounting a plurality of semiconductor devices 100 on the functional surface of the semiconductor wafer 2. / A third stacked body 80 in which the semiconductor devices 100 are stacked in this order is obtained. The process of obtaining the 3rd laminated body of 2nd Embodiment is the same as the process of obtaining the 3rd laminated body of 1st Embodiment.

(Sealing process)
Next, after the step of obtaining the third stacked body 80, a sealing step of sealing the semiconductor device 100 may be performed. By sealing the semiconductor device 100, moisture and dust can be prevented from being mixed, so that the reliability of the electronic device can be improved.

(Second peeling step)
Next, as shown in FIG. 2C, the third stacked body 80 is heated to peel the second support substrate 4 from the third stacked body 80. Thereby, the electronic device 200 in which the semiconductor device 100 is mounted on the functional surface of the semiconductor wafer 2 can be obtained.

  Specifically, the second fixed resin layer 20 is thermally decomposed by heating to a temperature higher than the thermal decomposition temperature of the second fixed resin layer 20, and the second support substrate 4 is peeled off.

  The method for peeling off the second support base 4 is not particularly limited, but a method of detaching in the direction perpendicular to the back surface of the semiconductor wafer 2 or a direction in the horizontal direction with respect to the back surface of the semiconductor wafer 2. Examples include a method of detaching by sliding, a method of floating the second support substrate 4 from one side of the second support substrate 4, and the like.

  After the second peeling step, the second fixed resin layer 20 remaining on the second support base 4 or the semiconductor wafer 2 may be removed as necessary. A method for removing the remaining second fixed resin layer 20 is not particularly limited, and examples thereof include plasma treatment, chemical immersion treatment, polishing treatment, and heat treatment.

  In the method for manufacturing an electronic device according to the second embodiment, since the second fixed resin layer 20 is thermally decomposed to have a low molecular weight, the second support substrate can be detached without stress. The support base 4 and the semiconductor wafer 2 are not easily damaged. Further, the component of the second fixed resin layer 20 having a reduced molecular weight is volatilized during the heating, and the second fixed resin layer 20 is unlikely to remain on the second support base 4 and the semiconductor wafer 2. Play. Therefore, it is possible to simplify post-cleaning and other post-processes and to improve handling.

(Individualization process)
Next, as illustrated in FIG. 2D, an individualization process for separating the electronic device 200 in which the semiconductor device 100 is mounted on the semiconductor wafer can be performed. The singulation process of the second embodiment is the same as the singulation process of the first embodiment.

<Third Embodiment>
The electronic device manufacturing method according to the third embodiment of the present invention uses a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation of active energy rays as the first fixed resin layer. A heat-softening fixed resin layer is used as the resin layer, and the fixed resin layer is thermally decomposed after first irradiating the fixed resin layer with active energy rays in the first peeling step, and then the second peeling step. Then, it is embodiment which heat-softens a fixed resin layer by heating.

  In the third embodiment, active energy rays are not irradiated in the second peeling step. In the third embodiment, the active energy ray irradiation step is not performed in the second peeling step, and heat softening is performed by heating, and the second fixed resin layer has a thermal decomposition temperature by irradiation of the active energy rays. Although it is different from the first embodiment in that it is not a heat-decomposable fixed resin layer that is lowered but a heat-softening fixed resin layer, the other points are the same as those in the first embodiment. Therefore, in the third embodiment, the description of the parts common to the first embodiment is omitted, and the description of the parts different from the first embodiment is mainly described.

  In the third embodiment, the thermal decomposition temperature of the first fixed resin layer after irradiation with active energy rays is lower than the softening point of the thermosoftening fixed resin layer that is the second fixed resin layer. Accordingly, the first heat-degradable first fixing resin is selectively heated by heating at a temperature higher than the heat-decomposition temperature of the heat-decomposable fixing resin layer and lower than the softening point of the heat-softening fixing resin layer. Since only the layer can be thermally decomposed, only the first supporting substrate can be reliably peeled in the first peeling step.

(Step of obtaining the first laminate)
The step of obtaining the first laminate of the third embodiment is the same as the step of obtaining the first laminate of the first embodiment.
First, as shown in FIG. 3 (a), as in the first embodiment described above, a pyrolytic property in which the thermal decomposition temperature is lowered by irradiation with active energy rays on the first support substrate 1. The first fixed resin layer 10 is formed. The fixed resin layer 10 of the third embodiment is the same as the fixed resin layer 10 of the first embodiment. In the third embodiment, since the active energy rays are first irradiated from the first supporting base material 1 side in the first peeling step, the first supporting base material 1 transmits the active energy rays. Is used. The second support substrate may be a support substrate that transmits active energy rays or a support substrate that does not transmit active energy rays.

  Next, as shown in FIG. 3B, the first stacked body 61 is obtained in the same manner as in the first embodiment described above.

(Semiconductor wafer backside processing process)
Next, as shown in FIG. 3C, a semiconductor wafer back surface processing step is performed as in the first embodiment described above.

(Step of obtaining the second laminate)
Next, as shown in FIG. 3D, the back surface of the semiconductor wafer 2 and the second support base 4 are bonded together via a thermosoftening second fixed resin layer 30, thereby A second laminated body 71 is obtained in which the supporting substrate 1 / first fixing resin layer 10 / semiconductor wafer 2 / second fixing resin layer 30 / second supporting substrate 4 are laminated in this order.

  The method for adhering the back surface of the semiconductor wafer 2 and the second support substrate 4 through the thermosoftening second fixing resin layer 30 is not particularly limited, but a vacuum press device, a wafer bonder, or the like may be used. Can be mentioned.

  In addition, the conditions for adhering the back surface of the semiconductor wafer 2 and the second support base 4 via the thermosoftening second fixing resin layer 30 are not particularly limited, but the temperature is 25 to 25. 300 ° C, pressure: 0.01 to 3 MPa, time: 1 to 300 seconds, temperature: 30 to 250 ° C, pressure: 0.03 to 2 MPa, time: 3 to 250 seconds It is preferable to apply, and it is particularly preferable to apply under conditions of temperature: 50 to 200 ° C., pressure: 0.05 to 1 MPa, and time: 5 to 200 seconds. Thereby, since it is possible to effectively prevent bubbles from being generated between the second support base 4 and the semiconductor wafer 2, the thickness variation of the semiconductor wafer 2 after the semiconductor wafer 2 is ground (described later). Can be reduced.

  Here, as a manufacturing method of the second laminated body 71, the thermosoftening second fixing resin layer 30 is formed in advance on the back surface of the semiconductor wafer 2 and the second support base material 4 is adhered. Alternatively, the heat-softening second fixed resin layer 30 may be formed in advance on the second support base 4 and the back surface of the semiconductor wafer 2 may be adhered.

Next, the thermosoftening fixed resin layer used in the second fixed resin layer 30 will be described. The second fixed resin layer 30 is made of a heat softening resin composition.
The heat-softening second fixing resin layer 30 does not decrease in viscosity at the heating temperature in the first peeling step, but decreases in melt viscosity by heating at the heating temperature in the second peeling step. If it is a thing, it will not specifically limit. Specifically, the thermosoftening second fixing resin layer preferably has a viscosity at the heating temperature in the first peeling step of 500 Pa · s or more, particularly 1000 Pa · s or more. Further, the viscosity at the heating temperature in the second peeling step is preferably 300 Pa · s or less, and particularly preferably 250 Pa · s or less. Thereby, it is possible to prevent the semiconductor wafer 2 from being displaced in the first peeling step, and it is possible to reliably mount the semiconductor device 100 on the semiconductor wafer 2. The heat softening temperature of the heat softening fixed resin layer refers to a temperature at which the melt viscosity of the fixed resin layer becomes 300 Pa · s.

  The thermosoftening fixed resin layer contains a thermosoftening resin. The thermosoftening resin is not particularly limited as long as it is a thermoplastic resin that is softened by heating in the second peeling step. For example, an acrylic ester copolymer containing an acrylic ester monomer as a main component. And acrylic resins such as vinyl acetate / acrylic acid ester copolymers, rubber resins such as butyl rubber, polyisoprene, polybutadiene and styrene / butadiene copolymers, and polyimide resins. As described above, since the heat softening resin is softened by heating in the second peeling step, the second support base 4 can be peeled without damaging the semiconductor wafer 2.

  The heat-softening fixed resin layer is not particularly limited, and contains additives such as an antioxidant, a flocculant, a plasticizer, a surfactant, a wax and a filler in addition to the heat-softening resin. Also good.

  Regarding the formation of the thermosoftening second fixing resin layer 30, a resin composition containing a solvent by dissolving or dispersing the thermosoftening resin and other components constituting the thermosoftening fixing resin layer in a solvent. A heat-softening fixed resin layer can be formed by preparing a product, forming a resin composition containing the obtained solvent on a support substrate or a semiconductor wafer, and removing the solvent by drying. . Solvents are not particularly limited, but hydrocarbons such as mesitylene, decalin, mineral spirits, alcohols / ethers such as anisole, propylene glycol monomethyl ether, dipropylene glycol methyl ether, diethylene glycol monoethyl ether, diglyme, etc. , Esters / lactones such as ethylene carbonate, ethyl acetate, N-butyl acetate, ethyl lactate, ethyl 3-ethoxypropionate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene carbonate, γ-butyrolactone, acetone, Ketones such as methyl ethyl ketone, cyclopentanone, cyclohexanone, methyl isobutyl ketone, 2-heptanone, N-methyl-2-pyrrolidinone, etc. Bromide / lactams, and the like. When the thermosoftening resin composition contains a solvent, it becomes easy to adjust the viscosity of the thermosoftening resin composition, and a thin film of the thermosoftening resin composition is formed on a semiconductor wafer or a supporting substrate. Easy to do.

  In addition, regarding the formation of the thermosoftening second fixing resin layer 30, a resin containing a solvent by dissolving the thermosoftening resin and other components constituting the thermosoftening fixing resin layer in the above-described solvent. A film is obtained by obtaining a composition, and then applying a resin composition containing a solvent to a substrate such as polyethylene terephthalate (PET), polyethylene (PE), or polypropylene (PP), and further evaporating the solvent by heating. The resin composition on the film can be obtained, and then the resin composition on the film can be laminated on a supporting substrate or a semiconductor wafer to form a thermosoftening fixed resin layer.

(First peeling step)
Next, an active energy ray is irradiated from the 1st support base material 1 side.

  Next, as shown to a figure (4-a), the 2nd laminated body 71 is heated and the 1st support base material 1 is peeled from the 2nd laminated body 71. FIG. The first peeling process of the third embodiment is the same as the first peeling process of the first embodiment.

  Specifically, by heating to a temperature that is higher than the thermal decomposition temperature of the first fixed resin layer 10 after being irradiated with the active energy rays and lower than the thermal softening temperature of the second fixed resin layer 30, Only the first fixed resin layer 10 is selectively thermally decomposed, and the first support substrate 1 is peeled off.

  In the third embodiment, if the heating temperature of the second laminate in the first peeling step is T1 (° C.) and the thermal softening temperature of the second fixed resin layer is T2 (° C.), “T1 <T2 And preferably “T1 + 20 <T2.”

  After the first peeling step, the first fixed resin layer 10 remaining on the first support substrate 1 or the semiconductor wafer 2 may be removed as necessary. A method for removing the remaining first fixed resin layer 10 is not particularly limited, and examples thereof include plasma treatment, chemical immersion treatment, polishing treatment, and heat treatment.

In the method for manufacturing an electronic device according to the third embodiment, since the first fixed resin layer 10 is thermally decomposed to have a low molecular weight, the first support substrate can be detached without stress. The support substrate 1 and the semiconductor wafer 2 are not easily damaged.
In addition, the component of the first fixed resin layer 10 having a low molecular weight is volatilized during heating, and the first fixed resin layer 1 hardly remains on the first support base 1 and the semiconductor wafer 2. Play. Therefore, it is possible to simplify post-cleaning and other post-processes and to improve handling.

(Step of obtaining a third laminate)
Next, as shown in FIG. 4B, a third laminate 81 is obtained in the same manner as in the first embodiment described above.

(Second peeling step)
Next, as shown in FIG. 4C, the third laminate 81 is heated by heating the third laminate 81 at a temperature equal to or higher than the softening temperature of the thermosoftening second fixed resin layer 30. A second peeling step for peeling the second support base material 4 from 81 is performed. Thereby, the electronic device 200 in which the semiconductor device 100 is mounted on the functional surface of the semiconductor wafer 2 can be obtained.

  In the method for manufacturing an electronic device according to the third embodiment, since the second fixed resin layer 30 is thermally softened, the second support substrate 4 can be detached without stress. 4 and the semiconductor wafer 2 are less likely to be damaged.

(Individualization process)
Next, as shown in FIG. 4D, an individualization step for individualizing the electronic device 200 in which the semiconductor device 100 is mounted on the semiconductor wafer 2 is performed as in the first embodiment described above. Can do.

<Fourth Embodiment>
The manufacturing method of the electronic device of the fourth embodiment of the present invention uses a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation of active energy rays as the first fixed resin layer, and the second fixed resin layer. A fixed resin layer having a light-to-heat conversion layer is used as the resin layer, and the fixed resin layer is thermally decomposed after first irradiating the fixed resin layer in the first peeling step, and then the second peeling. In the process, the photothermal conversion layer is decomposed by irradiating active energy rays. 4th Embodiment is a point which decomposes | disassembles a photothermal conversion layer by irradiating an active energy ray in a 2nd peeling process, and the point that the 2nd fixed resin layer is a fixed resin layer which has a photothermal conversion layer, Although different from the first embodiment, the rest is the same as the first embodiment. Therefore, in the third embodiment, the description of the parts common to the first embodiment is omitted, and the description of the parts different from the first embodiment is mainly described.

  In the fourth embodiment, the thermal decomposition temperature of the first fixed resin layer after irradiation with active energy rays is lower than the temperature at which voids are formed in the photothermal conversion layer of the second fixed resin layer. As a result, only the thermally decomposable fixed resin layer is selectively heated by heating to a temperature higher than the pyrolysis temperature of the thermally decomposable fixed resin layer and lower than the photothermal conversion layer thermally decomposes to form voids. Therefore, only the first support substrate can be reliably peeled off in the first peeling step.

(Step of obtaining the first laminate)
The process of obtaining the 1st laminated body of 4th Embodiment is the same as the process of obtaining the 1st laminated body of 1st Embodiment.
First, as shown in FIG. 5- (a), as in the first embodiment described above, a pyrolytic property in which the thermal decomposition temperature is lowered by irradiation with active energy rays on the first support substrate 1. The first fixed resin layer 10 is formed. The fixed resin layer 10 of the fourth embodiment is the same as the fixed resin layer 10 of the first embodiment. In the fourth embodiment, since the active energy rays are first irradiated from the first supporting substrate 1 side in the first peeling step, the first supporting substrate 1 is a supporting substrate that transmits the active energy rays. Is used. Moreover, in 4th Embodiment, in order to irradiate an active energy ray at a 2nd peeling process, the support base material which permeate | transmits an active energy ray is used as a 2nd support base material.

  Next, as shown in FIG. 5B, the first laminate 62 is obtained in the same manner as in the first embodiment described above.

(Semiconductor wafer backside processing process)
Next, as shown in FIG. 5C, a semiconductor wafer back surface processing step is performed as in the first embodiment described above.

(Step of obtaining the second laminate)
Next, as shown in FIG. 5D, the back surface of the semiconductor wafer 2 and the second support base 4 are bonded together via a second fixed resin layer 40 having a photothermal conversion layer 42 and an adhesive layer 41. Accordingly, the first support base material 1 / the first fixed resin layer 10 / the semiconductor wafer 2 / the second fixed resin layer 40 / the second support base material 4 are stacked in this order. Get. In FIG. 5D, it is described that the second fixed resin layer is a fixed resin layer having a photothermal conversion layer and an adhesive layer. However, the second fixed resin layer of the fourth embodiment is Further, it may be a fixed resin layer composed only of the photothermal conversion layer.

  In the fourth embodiment shown in FIGS. 5 and 6, since the fixed resin layer having the adhesive layer 41 and the photothermal conversion layer 42 is used as the second fixed resin layer 40, the second laminate 72 is more Specifically, a structure in which the first support substrate 1 / first fixed resin layer 10 / semiconductor wafer 2 / adhesive layer 41 / photothermal conversion layer 42 / second support substrate 4 are laminated in this order. Have.

(Photothermal conversion layer)
Here, the photothermal conversion layer 42 and the adhesive layer 41 used in the fourth embodiment will be described.
The photothermal conversion layer 42 is not particularly limited, but preferably contains a light absorber and a thermally decomposable resin. The thermally decomposable resin contained in the photothermal conversion layer 42 is also referred to as a thermally decomposable resin (3). When the photothermal conversion layer 42 contains the light absorber and the thermally decomposable resin (3), the photothermal conversion layer 42 is irradiated with active energy rays, whereby thermal energy is generated, and the temperature of the photothermal conversion layer 42 is increased. It rises rapidly. When the temperature of the photothermal conversion layer 42 reaches the decomposition temperature of the thermally decomposable resin (3), the thermally decomposable resin (3) is decomposed and volatilized, so that a void is formed in the photothermal conversion layer 42.

  Here, the active energy ray is not particularly limited, and examples thereof include laser light having a wavelength of 300 to 2000 nm, and more specifically, a YAG laser that generates an active energy ray having a wavelength of 1064 nm, 532 nm. And a second harmonic YAG laser having a wavelength of 780 to 1300 nm and a semiconductor laser having a wavelength of 780 to 1300 nm. Among these, the YAG laser which can utilize the present general-purpose equipment is preferable.

  Examples of the light absorber include, but are not limited to, carbon black, graphite powder, iron, aluminum, copper, nickel, cobalt, manganese, chromium, zinc and other metal fine particle powder, squarylium compound, cyanine. And dyes such as methine dyes, methine dyes, naphthoquinone dyes, and anthraquinone dyes. Among these, carbon black that can efficiently convert active energy into thermal energy is preferable.

  The content of the light absorber varies depending on the type and shape of the light absorber, dispersibility in the photothermal conversion layer 42, etc., but is preferably 1 to 80% by volume of the photothermal conversion layer, and 3 to 70. It is preferable that it is volume%. If the content is less than the lower limit, the light-to-heat conversion layer 42 may not generate enough heat, and the thermally decomposable resin (3) may be difficult to decompose. On the other hand, when the above upper limit is exceeded, the film-forming property of the photothermal conversion layer 42 may be poor and the uniform photothermal conversion layer 42 may not be formed.

  The thermally decomposable resin (3) is not particularly limited. For example, gelatin, cellulose, cellulose acetate, nitrocellulose, polyphenol, polyvinyl butyral, polyvinyl acetal, polycarbonate, polyurethane, polyester, polyorthoester, polyacetal. , Polyvinyl alcohol, polyvinyl pyrrolidone, poly (meth) acrylate resin, polyvinyl chloride and the like, and these may be used alone or in combination of two or more. In addition, the glass transition temperature of the thermally decomposable resin (3) is not less than room temperature (25 ° C.) so that the photothermal conversion layer 42 formed by forming voids by thermal decomposition of the thermally decomposable resin (3) is not reattached. Desirably, the glass transition temperature is more preferably 100 ° C. or higher in order to prevent re-adhesion. When the second support substrate is glass, in order to increase the adhesion between the glass and the photothermal conversion layer 42, polar groups that can hydrogen bond with silanol groups on the glass surface (for example, —COOH, —OH, etc.) A thermally decomposable resin (3) having in the molecule can be used. Furthermore, in application to applications requiring chemical treatment such as chemical etching, in order to impart chemical resistance to the photothermal conversion layer 42, a thermally decomposable resin (in the molecule having a functional group capable of self-crosslinking by heat treatment) 3) or a thermally decomposable resin (3) that can be cross-linked with ultraviolet rays or visible light can also be used.

  The photothermal conversion layer 42 contains additives such as a filler, a coupling agent, a surfactant, an antioxidant, a foaming agent, and a sublimation agent as necessary, in addition to the thermally decomposable resin and the light absorber. Also good.

(Adhesive layer)
In the third embodiment, the adhesive layer 41 is used for fixing the semiconductor wafer 2 to the second support base 4 via the photothermal conversion layer 42. After the separation of the semiconductor wafer 2 and the second support base 4 by thermal decomposition of the photothermal conversion layer 42, the semiconductor wafer 2 to which the adhesive layer 41 is attached is obtained. The adhesive layer 41 has a sufficient adhesive force for fixing the semiconductor wafer 2 to the second support base 4, but after the semiconductor wafer 2 and the second support base 4 are peeled, the adhesive layer 41 is What can be easily peeled off from the semiconductor wafer 2 is preferable.

  The adhesive that can be used to form the adhesive layer 41 is not particularly limited, but is a one-component solution based on a rubber adhesive, epoxy, urethane, or the like in which rubber or elastomer is dissolved in a solvent. Thermosetting adhesives, two-component mixed reaction adhesives based on epoxy, urethane, acrylic, etc., hot melt adhesives, ultraviolet (UV) or electron beam curable adhesives based on acrylic, epoxy, etc. A water dispersion type adhesive etc. are mentioned. More specifically, UV curing by adding a photopolymerization initiator and, if necessary, an additive to an oligomer and / or a (meth) acrylic monomer having a (meth) acrylic group such as urethane acrylate, epoxy acrylate or polyester acrylate. Mold adhesives. Examples of the additive include a thickener, a plasticizer, a dispersant, a filler, a flame retardant, and an antioxidant.

  In particular, since the semiconductor wafer 2 has unevenness such as a circuit pattern, the adhesive layer 41 is a liquid adhesive in order to fill the unevenness of the semiconductor wafer 2 with the adhesive layer 41 and make the adhesive layer 41 have a uniform thickness. The viscosity of the liquid adhesive is preferably 10 Pa · s or less, particularly preferably 5 Pa · s or less, at a temperature (for example, 25 ° C.) when applied to the semiconductor wafer 2.

  Further, the elastic modulus at 25 ° C. after the adhesive layer 41 is formed on the semiconductor wafer 2 is preferably 100 MPa or more, particularly preferably 200 MPa or more. Further, the elastic modulus at 260 ° C. after forming the adhesive layer 41 on the semiconductor wafer 2 is preferably 1 MPa or more, and particularly preferably 5 Mpa or more. Thereby, it is possible to suitably prevent the semiconductor wafer 2 from being damaged or the semiconductor wafer 2 from being displaced due to stress generated when the semiconductor device 100 described later is mounted on the semiconductor wafer 2.

  Further, as the adhesive layer 41, a double-sided adhesive tape can be used. Such a double-sided adhesive tape is usually provided with a pressure-sensitive adhesive layer on both sides of a base film. The pressure-sensitive adhesive is not particularly limited, and includes a pressure-sensitive adhesive mainly composed of acrylic, urethane, natural rubber, or the like, or a pressure-sensitive adhesive containing a crosslinking agent in addition to these. Preferably, it is a pressure-sensitive adhesive containing a copolymer mainly composed of an acrylate ester. The base film is not particularly limited, and base films such as paper and plastic are used. Here, the base film is preferably a flexible base film that can facilitate peeling of the adhesive layer 41 from the semiconductor wafer 2.

  The thickness of the adhesive layer 41 is not particularly limited as long as the thickness can fill the thickness uniformity and the unevenness of the semiconductor wafer, but is preferably 10 to 200 μm, and particularly preferably 20 to 150 μm.

(First peeling step)
Next, an active energy ray is irradiated from the 1st support base material 1 side.

  Next, as shown to a figure (5-e), the 2nd laminated body 72 is heated and the 1st peeling process which peels the 1st support base material 1 from the 2nd laminated body 72 is performed. . The first peeling process of the fourth embodiment is the same as the first peeling process of the first embodiment.

  In 4th Embodiment, the heating temperature of the 2nd laminated body in a 1st peeling process shall be T1 (degreeC), and the thermally decomposable resin (3) contained in the photothermal conversion layer of a 2nd fixed resin layer Assuming that the 5% weight loss temperature of T2 (° C.) is “T1 <T2”, preferably “T1 + 20 <T2”.

(Step of obtaining a third laminate)
Next, as shown in FIG. 6A, a third stacked body 82 is obtained in the same manner as in the first embodiment described above. The step of obtaining the third laminate of the fourth embodiment is the same as the step of obtaining the third laminate of the first embodiment.

(Second peeling step)
Next, as shown in FIG. 6B, thermal energy is generated in the photothermal conversion layer 42 by irradiating active energy rays from the second support base material 4 side. The thermally decomposable resin (3) is thermally decomposed, and voids 5 are generated in the photothermal conversion layer. Here, the photothermal conversion layer 42 does not need to be thermally decomposed entirely, and the void 5 may be formed in the photothermal conversion layer 42 by partially thermally decomposing.

  Next, as shown in FIG. 6C, the second support base material 4 is peeled from the third laminate 82. In the fourth embodiment, the void 5 is formed in the photothermal conversion layer 42 by first irradiating the active energy ray, and the adhesion area between the adhesive layer 41 and the second support base 4 is reduced. Therefore, the second support substrate 4 can be easily peeled off.

  In the method for manufacturing an electronic device according to the fourth embodiment, since the void 5 is formed in the photothermal conversion layer 42, the second support substrate 4 can be detached without stress. 4 and the semiconductor wafer 2 are less likely to be damaged.

  Next, the adhesive layer 41 in contact with the semiconductor wafer 2 is removed. The method for removing the adhesive layer 41 is not particularly limited, and examples include plasma treatment, chemical immersion treatment, polishing treatment, and simple peeling. However, the damage to the semiconductor wafer 2 on which the semiconductor device 100 is laminated is reduced. A simple peel that can be done is preferred.

  In the fourth embodiment, when the second support base 4 is reused, it is preferable to remove the photothermal conversion layer 42 remaining on the second support base 4. The method for removing the photothermal conversion layer 42 is not particularly limited, and examples thereof include plasma treatment, chemical immersion treatment, polishing treatment, and heat treatment.

  Moreover, when the 2nd fixed resin layer of 4th Embodiment is a fixed resin layer which consists only of a photothermal conversion layer, by irradiating an active energy ray from the 2nd support base material 4 side, in a photothermal conversion layer The thermally decomposable resin (3) is thermally decomposed to generate voids in the photothermal conversion layer, and the second supporting substrate is peeled off. Next, if necessary, the photothermal conversion layer (second fixed resin layer) remaining on the semiconductor wafer 2 is removed using a method such as plasma treatment, chemical solution immersion treatment, polishing treatment, or heat treatment.

(Individualization process)
Next, as shown in FIG. 6D, an individualization step is performed to separate the electronic device 200 in which the semiconductor device 100 is mounted on the semiconductor wafer, as in the first embodiment described above.

<Fifth Embodiment>
The manufacturing method of the electronic device of the fifth embodiment of the present invention uses a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation of active energy rays as the first fixed resin layer, and uses the second fixed resin layer. A fixed resin layer having solvent solubility is used as the resin layer, the active resin is irradiated with active energy rays in the first peeling step, the fixed resin layer is thermally decomposed, and the second peeling is performed. In the process, the second fixing resin layer is dissolved in the solvent. In the fifth embodiment, the point that the second fixing resin layer is dissolved in the second peeling step and the second fixing resin layer is a fixing resin layer having solvent solubility are the first implementation. Although it differs from a form, it is the same as that of 1st Embodiment except those. For this reason, in the fifth embodiment, descriptions of parts common to the first embodiment are omitted, and descriptions of parts different from the first embodiment are mainly described.

  In the fifth embodiment, the thermal decomposition temperature of the first fixed resin layer after being irradiated with active energy is lower than the softening temperature of the fixed resin layer having solvent solubility, which is the second fixed resin layer. Thereby, the temperature is higher than the thermal decomposition temperature of the first decomposable resin layer that is thermally decomposable after irradiation with the active energy ray, and lower than the thermal softening temperature of the second fixed resin layer having solvent solubility. Since only the thermally decomposable fixed resin layer can be thermally decomposed by heating, only the first base material can be reliably peeled in the first peeling step. The heat softening temperature of the fixed resin layer having solvent solubility refers to a temperature at which the melt viscosity of the fixed resin layer becomes 300 Pa · s.

(Step of obtaining the first laminate)
The step of obtaining the first laminate of the fifth embodiment is the same as the step of obtaining the first laminate of the first embodiment.
First, as shown in FIG. 7A, as in the first embodiment described above, a pyrolytic property in which the thermal decomposition temperature is lowered on the first support base material 1 by irradiation with active energy rays. The first fixed resin layer 10 is formed. The fixed resin layer 10 of the fifth embodiment is the same as the fixed resin layer 10 of the first embodiment. In the fifth embodiment, since the active energy rays are irradiated from the first supporting substrate 1 side before the first peeling step, the first supporting substrate 1 is a supporting substrate that transmits the active energy rays. Is used.

(Step of obtaining the first laminate)
Next, as shown in FIG. 7B, a first laminate 63 is obtained in the same manner as in the first embodiment described above.

(Semiconductor wafer backside processing process)
Next, as shown in FIG. 7C, a semiconductor wafer back surface processing step is performed as in the first embodiment described above.

(Step of obtaining the second laminate)
Next, as shown in FIG. 7D, the back surface of the semiconductor wafer 2 and the second support base material 4 are bonded together via a second fixed resin layer 50 having solvent solubility. Support substrate 1 / first fixed resin layer 10 / semiconductor wafer 2 / second fixed resin layer 50 having solvent solubility / second support substrate 4 stacked in this order. Get.

  As shown in FIG. 7D, the second support substrate 4 in the fifth embodiment is preferably provided with a through hole 6 in the thickness direction. Accordingly, the solvent can be supplied from the through-hole 6 in the second peeling step described later, and the contact area between the solvent and the second fixed resin layer 50 having the solvent solubility is increased. The two fixed resin layers 50 can be rapidly dissolved.

Here, the solvent-soluble fixed resin layer used in the fifth embodiment will be described.
The solvent-soluble second fixed resin layer 50 is made of a solvent-soluble resin composition and is not particularly limited as long as it contains a solvent-soluble resin.

  The solvent-soluble resin is not particularly limited as long as it is a resin that is soluble in the solvent supplied in the second peeling step, that is, a solvent-soluble resin. For example, a phenol novolac resin , Cresol novolac resin, bisphenol A type novolak resin, bisphenol F type novolak resin and other novolak phenol resins, polyimide precursor resins obtained by reaction of diamines and acid anhydrides, and dehydration ring closure And an acrylic resin obtained by polymerizing a (meth) acrylate monomer. The solvent-soluble resin refers to a resin that is dissolved in 1 g or more in 100 g of a solvent at 25 ° C.

  Moreover, the fixed resin layer having solvent solubility may contain additives such as an antioxidant, a flocculant, a plasticizer, a surfactant, a wax, and a filler, if necessary.

  About formation of the 2nd fixed resin layer 50 which has solvent solubility, the component which comprises resin which has solvent solubility, and other fixed resin layer which has solvent solubility is dissolved or disperse | distributed in a solvent, and a solvent is contained. The resin composition containing the obtained solvent is prepared, and the resin composition containing the obtained solvent is formed on a support substrate or a semiconductor wafer, and the solvent is removed by drying to form a thermosoftening fixed resin layer. be able to. Solvents are not particularly limited, but hydrocarbons such as mesitylene, decalin, mineral spirits, alcohols / ethers such as anisole, propylene glycol monomethyl ether, dipropylene glycol methyl ether, diethylene glycol monoethyl ether, diglyme, etc. , Esters / lactones such as ethylene carbonate, ethyl acetate, N-butyl acetate, ethyl lactate, ethyl 3-ethoxypropionate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene carbonate, γ-butyrolactone, acetone, Ketones such as methyl ethyl ketone, cyclopentanone, cyclohexanone, methyl isobutyl ketone, 2-heptanone, N-methyl-2-pyrrolidinone, etc. Bromide / lactams, and the like. When the thermosoftening resin composition contains a solvent, it becomes easy to adjust the viscosity of the thermosoftening resin composition, and a thin film of the thermosoftening resin composition is formed on a semiconductor wafer or a supporting substrate. Easy to do.

  The solvent-soluble second fixed resin layer 50 is formed by dissolving a solvent-soluble resin and other components constituting the solvent-soluble fixed resin layer in the above-mentioned solvent and containing a solvent. A resin composition containing a solvent is then applied to a substrate such as polyethylene terephthalate (PET), polyethylene (PE), polypropylene (PP), and the solvent is evaporated by heating. A film-like resin composition can be obtained, and then the resin composition on the film can be laminated on a supporting substrate or a semiconductor wafer to form a thermosoftening fixed resin layer.

(First peeling step)
Next, an active energy ray is irradiated from the 1st support base material 1 side.

(First peeling step)
Next, as illustrated in FIG. 7E, the second stacked body 73 is heated to peel the first support base material 1 from the second stacked body 73. The first peeling process of the fifth embodiment is the same as the first peeling process of the first embodiment.

  Specifically, it is heated to a temperature higher than the thermal decomposition temperature of the first fixed resin layer 10 after irradiation with the active energy rays and lower than the thermal softening temperature of the second fixed resin layer having solvent solubility. By doing so, only the first fixed resin layer 10 is selectively thermally decomposed, and the first support substrate 1 is peeled off.

  In the fifth embodiment, when the heating temperature of the second laminate in the first peeling step is T1 (° C.) and the thermal softening temperature of the second fixing resin layer having solvent solubility is T2 (° C.). , “T1 <T2”, and preferably “T1 + 20 <T2”.

  After the first peeling step, the first fixed resin layer 10 remaining on the first support substrate 1 or the semiconductor wafer 2 may be removed as necessary. A method for removing the remaining first fixed resin layer 10 is not particularly limited, and examples thereof include plasma treatment, chemical immersion treatment, polishing treatment, and heat treatment.

In the method for manufacturing an electronic device according to the fifth embodiment, since the first fixed resin layer 10 is thermally decomposed and reduced in molecular weight, the first support base material can be detached without stress. There is an effect that the support base material 1 and the semiconductor wafer 2 are not easily damaged.
In addition, the component of the first fixed resin layer 1 having a reduced molecular weight is volatilized during heating, and the first fixed resin layer 10 hardly remains on the first support base 1 and the semiconductor wafer 2. Play. Therefore, it is possible to simplify post-cleaning and other post-processes and to improve handling.

(Step of obtaining a third laminate)
Next, as shown in FIG. 8A, a third laminate 83 is obtained in the same manner as in the first embodiment described above.

(Second peeling step)
Next, as shown to a figure (8-b), the solvent which can dissolve the 2nd fixed resin layer 50 which has solvent solubility from the through-hole 6 of the 2nd support base material 4 is supplied.
In the fifth embodiment, since the solvent can be supplied from the through hole 6 of the second support base 4, the solvent is applied only to the cross section in the thickness direction of the second fixed resin layer 50 having solvent solubility. Compared with the case where it supplies, the contact area of the 2nd fixed resin layer 50 which has solvent solubility, and a solvent can be enlarged. Therefore, the second fixed resin layer 50 having solvent solubility can be removed in a short time, and the residue remaining on the semiconductor wafer 2 and the second support base 4 can be reduced.

  The solvent for dissolving the second fixed resin layer having solvent solubility may be any solvent that can dissolve the second fixed resin layer 50 having solvent solubility, such as acetone, methyl ethyl ketone, cyclohexanone, and the like. Examples include ketones, alcohols such as methanol, ethanol, isopropyl alcohol, and n-butanol, γ-butyrolactone, N-methyl-2-pyrrolidone, and the like.

  Next, as shown in FIG. 8C, the second support base material 4 is peeled from the third laminate 83. In 5th Embodiment, the 2nd fixed resin layer 50 (solvent solubility) melt | dissolves in a solvent previously, and the adhesion area of the 2nd fixed resin layer 50 which has the 2nd support base material 4 and solvent solubility. Therefore, the second support substrate 4 can be easily peeled off.

  In the method for manufacturing an electronic device according to the fifth embodiment, since the second fixed resin layer 50 having solvent solubility is dissolved in the solvent, it is possible to detach the second support substrate 4 without stress. The second support base material 4 and the semiconductor wafer 2 are less likely to be damaged.

  In the fifth embodiment, after the second peeling step, the second fixed resin layer 50 having solvent solubility attached to the semiconductor wafer 2 is removed. A method for removing the second fixed resin layer 50 having solvent solubility is not particularly limited, and examples thereof include plasma treatment, chemical immersion treatment, polishing treatment, and simple peeling, but the semiconductor device 100 is laminated. Simple peeling that can reduce damage to the semiconductor wafer 2 is preferable.

  In the fifth embodiment, when the second support substrate 4 is reused, it is preferable to remove the second fixed resin layer 50 having solvent solubility remaining on the second support substrate 4. . A method for removing the second fixed resin layer 50 is not particularly limited, and examples thereof include plasma treatment, chemical immersion treatment, polishing treatment, and heat treatment.

(Individualization process)
Next, as shown in FIG. 8D, an individualization step for individualizing the electronic device 200 in which the semiconductor device 100 is mounted on the semiconductor wafer 2 is performed as in the first embodiment described above.

  In the sixth to tenth embodiments of the present invention, a thermally decomposable fixing resin layer is used as the first fixing resin layer, and active energy rays are applied to the fixing resin layer in the first peeling step. This is an embodiment in which the fixed resin layer is thermally decomposed by heating the laminated body without performing irradiation. The thermally decomposable first fixed resin layer of the sixth to tenth embodiments is the same as the thermally decomposable second fixed resin layer of the second embodiment, and the sixth to tenth embodiments. The first peeling process is the same as the second peeling process of the second embodiment, and the second peeling processes of the sixth to tenth embodiments are the first to fifth embodiments, respectively. This is the same as the second peeling step.

In the method for manufacturing an electronic device according to the sixth embodiment of the present invention, a thermally decomposable fixed resin layer is used as the first fixed resin layer, and a thermal decomposition temperature is applied by irradiation with active energy rays as the second fixed resin layer. The heat decomposable fixing resin layer is used to reduce the temperature, and in the first peeling step, the fixing resin layer is thermally decomposed without irradiating the fixing resin layer with active energy rays. In this embodiment, the fixed resin layer is thermally decomposed after the active resin is irradiated with active energy rays.
In 6th Embodiment, the heating temperature of the 2nd laminated body in a 1st peeling process shall be T1 (degreeC), and 5% weight of the thermally decomposable resin (1) contained in the 2nd fixed resin layer Assuming that the decrease temperature is T2 (° C.), “T1 <T2”, preferably “T1 + 20 <T2”. At the time of the first peeling step, the second fixed resin layer is not yet irradiated with active energy, so T2 is included in the second fixed resin layer before being irradiated with active energy rays. This is the thermal decomposition temperature of the thermal decomposition resin (1).

In the electronic device manufacturing method according to the seventh embodiment of the present invention, a thermally decomposable fixed resin layer is used as the first fixed resin layer, and a thermally decomposable fixed resin layer is used as the second fixed resin layer. In the first peeling step, the fixing resin layer is thermally decomposed without irradiating the fixed resin layer with active energy rays, and in the second peeling step, the fixed energy layer is irradiated with active energy rays. In this embodiment, the fixed resin layer is thermally decomposed.
In 7th Embodiment, the heating temperature of the 2nd laminated body in a 1st peeling process shall be T1 (degreeC), and 5% weight of the thermally decomposable resin (2) contained in the 2nd fixed resin layer Assuming that the decrease temperature is T2 (° C.), “T1 <T2”, preferably “T1 + 20 <T2”.

In the electronic device manufacturing method according to the eighth embodiment of the present invention, a thermally decomposable fixed resin layer is used as the first fixed resin layer, and a thermosoftening fixed resin layer is used as the second fixed resin layer. In the first peeling step, the fixing resin layer is thermally decomposed without irradiating the fixing resin layer with active energy rays, and in the second peeling step, the fixing resin layer is thermally softened.
In the eighth embodiment, when the heating temperature of the second laminate in the first peeling step is T1 (° C.) and the heat softening temperature of the thermosetting second fixing resin layer is T2 (° C.), “T1 <T2”, preferably “T1 + 20 <T2”.

The manufacturing method of the electronic device of the ninth embodiment of the present invention uses a thermally decomposable fixed resin layer as the first fixed resin layer and a fixed resin layer having a photothermal change layer as the second fixed resin layer. In the first peeling step, the fixing resin layer is thermally decomposed without irradiating the fixing resin layer with the active energy ray, and in the second peeling step, the photothermal conversion layer is irradiated with the active energy ray. It is an embodiment which decomposes | disassembles a photothermal conversion layer.
In 9th Embodiment, the heating temperature degree of the 2nd laminated body in a 1st peeling process shall be T1 (degreeC), and the 5% weight reduction | decrease temperature of the thermally decomposable resin (3) contained in the photothermal conversion layer Is T2 (° C.), “T1 <T2”, and preferably “T1 + 20 <T2”.

In the electronic device manufacturing method according to the tenth embodiment of the present invention, a thermally decomposable fixed resin layer is used as the first fixed resin layer, and a solvent-soluble fixed resin layer is used as the second fixed resin layer. In the first peeling step, the fixing resin layer is thermally decomposed without irradiating the fixing resin layer with active energy rays, and in the second peeling step, the second fixing resin layer is dissolved in a solvent. It is a form.
In the tenth embodiment, assuming that the heating temperature of the second laminate in the first peeling step is T1 (° C.) and the thermal softening temperature of the fixed resin layer having solvent solubility is T2 (° C.), “T1 <T2 ”, preferably“ T1 + 20 <T2 ”.

  In the 11th to 15th embodiments of the present invention, a thermosoftening fixed resin layer is used as the first fixed resin layer, and the second laminate is heated in the first peeling step. This is an embodiment in which the heat-softening first fixed resin layer is heat-softened. The heat-softening first fixing resin layer of the 11th to 15th embodiments is the same as the heat-softening second fixing resin layer of the third embodiment, and the 11th to 15th embodiments. The first peeling step is the same as the second peeling step of the third embodiment, and the second peeling steps of the 11th to 15th embodiments are the first to fifth embodiments, respectively. This is the same as the second peeling step.

In the eleventh embodiment of the present invention, the electronic device manufacturing method uses a thermosoftening fixing resin layer as the first fixing resin layer, and the thermal decomposition temperature by irradiation with active energy rays as the second fixing resin layer. In the first peeling process, the fixing resin layer was thermally softened, and in the second peeling process, the active resin was irradiated with active energy rays first. In this embodiment, the fixed resin layer is thermally decomposed later.
In the eleventh embodiment, the heating temperature of the second laminate in the first peeling step is T1 (° C.), and 5% by weight of the thermally decomposable resin (1) contained in the second fixed resin layer Assuming that the decrease temperature is T2 (° C.), “T1 <T2”, preferably “T1 + 20 <T2”. At the time of the first peeling step, the second fixed resin layer is not yet irradiated with active energy, so T2 is included in the second fixed resin layer before being irradiated with active energy rays. This is the thermal decomposition temperature of the thermal decomposition resin (1).

In the electronic device manufacturing method according to the twelfth embodiment of the present invention, a thermosoftening fixing resin layer is used as the first fixing resin layer, and a thermally decomposable fixing resin layer is used as the second fixing resin layer. In this embodiment, the fixing resin layer is thermally softened in the first peeling step, and the fixing resin layer is thermally decomposed without irradiating the fixing resin layer with active energy rays in the second peeling step.
In the twelfth embodiment, the heating temperature of the second laminate in the first peeling step is T1 (° C.), and 5% by weight of the thermally decomposable resin (2) contained in the second fixed resin layer Assuming that the decrease temperature is T2 (° C.), “T1 <T2”, preferably “T1 + 20 <T2”.

In the manufacturing method of the electronic device according to the thirteenth embodiment of the present invention, a thermosoftening fixing resin layer is used as the first fixing resin layer, and a thermosoftening fixing resin layer is used as the second fixing resin layer. In the first peeling step, the fixing resin layer is thermally softened, and in the second peeling step, the fixing resin layer is heat softened.
In the thirteenth embodiment, when the heating temperature of the second laminate in the first peeling step is T1 (° C.) and the heat softening temperature of the thermosetting second fixing resin layer is T2 (° C.), “T1 <T2”, preferably “T1 + 20 <T2”.

The electronic device manufacturing method according to the fourteenth embodiment of the present invention uses a heat-softening fixed resin layer as the first fixed resin layer, and a fixed resin layer having a photothermal conversion layer as the second fixed resin layer. In this embodiment, the fixing resin layer is thermally softened in the first peeling step, and the photothermal conversion layer is decomposed by irradiating the photothermal conversion layer with active energy rays in the second peeling step.
In the fourteenth embodiment, the heating temperature of the second laminate in the first peeling step is T1 (° C.), and the 5% weight reduction temperature of the thermally decomposable resin (3) contained in the photothermal conversion layer is Assuming T2 (° C.), “T1 <T2”, and preferably “T1 + 20 <T2”.

In the manufacturing method of the electronic device according to the fifteenth embodiment of the present invention, a thermosoftening fixing resin layer is used as the first fixing resin layer, and a solvent-soluble fixing resin layer is used as the second fixing resin layer. In this embodiment, the fixing resin layer is thermally softened in the first peeling step, and the solvent of the second fixing resin layer is dissolved in the second peeling step.
In the fifteenth embodiment, assuming that the heating temperature of the second laminate in the first peeling step is T1 (° C.) and the thermal softening temperature of the fixed resin layer having solvent solubility is T2 (° C.), “T1 <T2 ”, preferably“ T1 + 20 <T2 ”.

  In the sixteenth to twentieth embodiments of the present invention, a fixed resin layer having a photothermal conversion layer is used as the first fixed resin layer, and active energy rays are applied to the photothermal conversion layer in the first peeling step. In this embodiment, the photothermal conversion layer is decomposed by irradiation. The first fixed resin layer having the photothermal conversion layer of the sixteenth to twentieth embodiments is the same as the second fixed resin layer having the photothermal conversion layer of the fourth embodiment, and the sixteenth to twentieth The first peeling process of the embodiment is the same as the second peeling process of the fourth embodiment, and the second peeling processes of the sixteenth to twentieth embodiments are the first to fifth, respectively. It is the same as that of the 2nd peeling process of embodiment.

  In the electronic device manufacturing method according to the sixteenth embodiment of the present invention, a fixed resin layer having a photothermal conversion layer is used as the first fixed resin layer, and thermal decomposition is performed by irradiation with active energy rays as the second fixed resin layer. Using a heat-decomposable fixing resin layer that decreases in temperature, the photothermal conversion layer is decomposed by irradiating the photothermal conversion layer with active energy rays in the first peeling step, and is fixed first in the second peeling step. This is an embodiment in which the fixed resin layer is thermally decomposed after irradiation of the active energy rays to the resin layer.

  In the electronic device manufacturing method according to the seventeenth embodiment of the present invention, a fixed resin layer having a photothermal conversion layer is used as the first fixed resin layer, and a thermally decomposable fixed resin layer is used as the second fixed resin layer. Used in the first peeling step, the photothermal conversion layer is decomposed by irradiating the photothermal conversion layer with active energy rays, and fixed in the second peeling step without irradiating the fixed resin layer with active energy rays. This is an embodiment for thermally decomposing a resin layer.

  In the electronic device manufacturing method according to the eighteenth embodiment of the present invention, a fixed resin layer having a photothermal conversion layer is used as the first fixed resin layer, and a thermosoftening fixed resin layer is used as the second fixed resin layer. In this embodiment, the photothermal conversion layer is decomposed by irradiating the photothermal conversion layer with active energy rays in the first peeling step, and the fixing resin layer is thermally softened in the second peeling step.

  The electronic device manufacturing method of the nineteenth embodiment of the present invention uses a fixed resin layer having a photothermal conversion layer as the first fixed resin layer, and a fixed resin layer having a photothermal conversion layer as the second fixed resin layer. In the first peeling step, the photothermal conversion layer is decomposed by irradiating the photothermal conversion layer with active energy rays, and in the second peeling step, the photothermal conversion layer is irradiated with active energy rays. It is embodiment which performs decomposition | disassembly of a layer.

  The electronic device manufacturing method according to the twentieth embodiment of the present invention uses a fixed resin layer having a photothermal conversion layer as the first fixed resin layer, and a fixed resin layer having solvent solubility as the second fixed resin layer. In the first peeling step, the photothermal conversion layer is decomposed by irradiating the photothermal conversion layer with active energy rays, and the second fixing resin layer is dissolved in the solvent in the second peeling step. is there.

  In the 21st to 25th embodiments of the present invention, a fixed resin layer having solvent solubility is used as the first fixed resin layer, and a solvent is added to the first fixed resin layer in the first peeling step. This is an embodiment in which the first fixing resin layer having solvent solubility is dissolved by supplying the solvent. The 1st fixed resin layer which has the solvent solubility of 21st-25th embodiment is the same as the 2nd fixed resin layer which has the solvent solubility of 5th Embodiment, The 21st-25th The first peeling process of the embodiment is the same as the second peeling process of the fifth embodiment, and the second peeling processes of the 21st to 25th embodiments are respectively the first to the fifth. It is the same as that of the 2nd peeling process of embodiment.

  In the electronic device manufacturing method according to the twenty-first embodiment of the present invention, a fixed resin layer having solvent solubility is used as the first fixed resin layer, and thermal decomposition is performed by irradiation with active energy rays as the second fixed resin layer. Using a thermally decomposable fixed resin layer whose temperature drops, the solvent of the fixed resin layer is dissolved in the first peeling step, and the active energy ray is irradiated to the fixed resin layer first in the second peeling step. This is an embodiment in which the fixed resin layer is thermally decomposed.

  In the electronic device manufacturing method according to the twenty-second embodiment of the present invention, a solvent-soluble fixing resin layer is used as the first fixing resin layer, and a thermally decomposable fixing resin layer is used as the second fixing resin layer. In this embodiment, the solvent of the fixing resin layer is dissolved in the first peeling step, and the fixing resin layer is thermally decomposed without irradiating the fixing resin layer with active energy rays in the second peeling step. .

  In the manufacturing method of the electronic device according to the twenty-third embodiment of the present invention, a fixed resin layer having solvent solubility is used as the first fixed resin layer, and a thermosoftening fixed resin layer is used as the second fixed resin layer. In this embodiment, the solvent of the fixing resin layer is dissolved in the first peeling step, and the softening of the fixing resin layer is performed in the second peeling step.

  In the electronic device manufacturing method according to the twenty-fourth embodiment of the present invention, a fixed resin layer having solvent solubility is used as the first fixed resin layer, and a fixed resin layer having a photothermal change layer as the second fixed resin layer. In the first peeling step, the solvent of the fixing resin layer is dissolved, and in the second peeling step, the photothermal conversion layer is decomposed by irradiating the photothermal conversion layer with active energy rays.

  In the method for manufacturing an electronic device according to the twenty-fifth embodiment of the present invention, a fixed resin layer having solvent solubility is used as the first fixed resin layer, and a fixed resin layer having solvent solubility is used as the second fixed resin layer. In the embodiment, the solvent of the fixed resin layer is dissolved in the first peeling step, and the solvent of the second fixed resin layer is dissolved in the second peeling step.

  As described above, by manufacturing a WL-CSP type electronic device having a COW structure using the fixed resin layer according to the present invention, an electronic device having a simple manufacturing process, a high yield, a low cost, and a high reliability can be obtained. The effect that it can be obtained can be produced.

  As mentioned above, although the specific example of the manufacturing method of the electronic device of this invention was described giving embodiment, this invention is not limited to these. For example, in the method for manufacturing an electronic device of the present invention, an arbitrary step may be added as necessary.

  In a method for manufacturing a WL-CSP type electronic device having a COW structure, a method for manufacturing an electronic device capable of obtaining an electronic device with a simple manufacturing process, high yield, low cost, and high reliability. An electronic device manufactured by the manufacturing method can be provided.

DESCRIPTION OF SYMBOLS 1 1st support substrate 2 Semiconductor wafer 3 Electrode 4 2nd support substrate 5 Void 6 Through-hole 10 1st fixed resin layer (The thermally decomposable fixed resin layer in which thermal decomposition temperature falls by irradiation of an active energy ray)
20 Second fixing resin layer (thermally decomposable fixing resin layer)
30 Second fixing resin layer (thermal softening fixing resin layer)
40 Second fixed resin layer (fixed resin layer having a photothermal conversion layer)
41 Adhesive layer 42 Photothermal conversion layer 50 Second fixed resin layer (fixed resin layer having solvent solubility)
60, 61, 62, 63 1st laminated body 70, 71, 72, 73 2nd laminated body 80, 81, 82, 83 3rd laminated body 100 Semiconductor device 200 Electronic device 300 Electronic device (separation)

Claims (15)

A first fixed resin layer is provided on the surface of the first support base, and then the first fixed resin layer and the semiconductor wafer are bonded together with the first fixed resin layer facing the functional surface of the semiconductor wafer. Alternatively, a first supporting resin / first fixing resin is provided by providing a first fixing resin layer on the functional surface of the semiconductor wafer and then bonding the first fixing resin layer and the first supporting substrate together. Obtaining a first laminate in which layers / semiconductor wafers are laminated in this order;
Grinding the back surface of the semiconductor wafer, and further forming a semiconductor wafer back surface processing step of forming electrodes on the back surface of the semiconductor wafer;
The back surface of the semiconductor wafer and the second support substrate are bonded together via a second fixed resin layer, thereby providing a first support substrate / first fixed resin layer / semiconductor wafer / second fixed resin layer / Obtaining a second laminate in which the second support base material is laminated in this order;
A first peeling step of peeling the first supporting substrate from the second laminated body by heating the second laminated body;
Mounting a plurality of semiconductor devices on the functional surface of the semiconductor wafer to obtain a third laminated body in which the second support base material / second fixed resin layer / semiconductor wafer / semiconductor device are laminated in this order; ,
A second peeling step of peeling the second support substrate from the third laminate;
I have a,
The first fixed resin layer is a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays, and the first peeling step is performed with active energy rays from the first support substrate side. The method for manufacturing an electronic device is a step of peeling the first support substrate by thermally decomposing the thermally decomposable fixed resin layer after irradiation . The method of manufacturing an electronic device according to claim 1 , further comprising a step of removing the first fixed resin layer attached to the functional surface of the semiconductor wafer after the first peeling step. Wherein after the second peeling process, a manufacturing method of an electronic device according to claim 1 or 2 comprising a step of removing the second fixing resin layer adhering to the back surface of the semiconductor wafer. Method of manufacturing an electronic device according to any one of 3 to the semiconductor device claims 1 is a laminate of a semiconductor chip or a semiconductor chip. Method of manufacturing an electronic device according to any one of the four claims 1 mounted on the semiconductor wafer through the resin composition, wherein the semiconductor device has a flux function. Wherein after the step of obtaining a second laminate, a manufacturing method of an electronic device according to any one of claims 1 to 5 having a sealing step of sealing with the sealing resin of the semiconductor device. Wherein after the second separation step, the method of manufacturing an electronic device according to any one of claims 1 to 6 having a singulation step of dicing the individual semiconductor device unit. The method for manufacturing an electronic device according to claim 1, wherein the first fixed resin layer is a thermally decomposable fixed resin layer containing a thermally decomposable resin. The thermal decomposition of the fixing resin layer pyrolysis temperature is lowered by irradiation of active energy rays, claims 1, thermally decomposable fixing resin layer containing a thermally decomposable resin pyrolysis temperature is lowered by an acid 8 The manufacturing method of the electronic device in any one of. In the second peeling step, for the third laminate,
(I) heating,
(Ii) irradiating active energy rays, or (iii) supplying a solvent,
Method of manufacturing an electronic device according to any one of claims 1 to 9 for separating the second supporting substrate by. (I) The second fixing resin layer is a thermally decomposable or thermosoftening fixed resin layer, and in the second peeling step, the third laminate is heated to generate the thermally decomposable or Pyrolyzing or softening the heat-softening fixed resin layer,
(Ii) The second fixing resin layer is a fixing resin layer having a photothermal conversion layer, and in the second peeling step, the third laminate is irradiated to fix the resin having the photothermal conversion layer. (Iii) the second fixed resin layer is a fixed resin layer having solvent solubility, and in the second peeling step, a solvent is supplied to the third laminate. , Dissolving the solvent-soluble fixed resin layer in a solvent,
The method for manufacturing an electronic device according to claim 10 , wherein the second supporting substrate is peeled off by the step. The method for manufacturing an electronic device according to claim 11 , wherein the second fixed resin layer is a thermally decomposable fixed resin layer containing a thermally decomposable resin. The second fixed resin layer is a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation of active energy rays, and the second peeling step is performed from the second support base material side with active energy rays. The method of manufacturing an electronic device according to claim 11 , wherein the heat decomposable fixing resin layer is thermally decomposed after irradiation. Thermally decomposing the fixed resin layer pyrolysis temperature is lowered by irradiation of the active energy ray, according to claim 13, which is a thermally decomposable fixed resin layer containing a thermally decomposable resin pyrolysis temperature is lowered by an acid Method for manufacturing the electronic device. A first fixed resin layer is provided on the surface of the first support base, and then the first fixed resin layer and the semiconductor wafer are bonded together with the first fixed resin layer facing the functional surface of the semiconductor wafer. Alternatively, a first supporting resin / first fixing resin is provided by providing a first fixing resin layer on the functional surface of the semiconductor wafer and then bonding the first fixing resin layer and the first supporting substrate together. Obtaining a first laminate in which layers / semiconductor wafers are laminated in this order;
Grinding the back surface of the semiconductor wafer, and further forming a semiconductor wafer back surface processing step of forming electrodes on the back surface of the semiconductor wafer;
The back surface of the semiconductor wafer and the second support substrate are bonded together via a second fixed resin layer, thereby providing a first support substrate / first fixed resin layer / semiconductor wafer / second fixed resin layer / Obtaining a second laminate in which the second support base material is laminated in this order;
A first peeling step of peeling the first supporting substrate from the second laminated body by heating the second laminated body;
Mounting a plurality of semiconductor devices on the functional surface of the semiconductor wafer to obtain a third laminated body in which the second support base material / second fixed resin layer / semiconductor wafer / semiconductor device are laminated in this order; ,
A second peeling step of peeling the second support base material from the third laminate and obtaining an electronic device in which the semiconductor device is mounted on the functional surface of the semiconductor wafer;
A step of mounting the electronic device on a substrate,
Have
The first fixed resin layer is a thermally decomposable fixed resin layer whose thermal decomposition temperature is lowered by irradiation with active energy rays, and the first peeling step is performed with active energy rays from the first support substrate side. after irradiation with the thermal decomposition of the fixed resin layer Ru step der peeling the first support substrate by thermal decomposition electrical method of manufacturing an electronic component.

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