JP5929000B2 - Method for producing porous aluminum foil - Google Patents
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- JP5929000B2 JP5929000B2 JP2011069897A JP2011069897A JP5929000B2 JP 5929000 B2 JP5929000 B2 JP 5929000B2 JP 2011069897 A JP2011069897 A JP 2011069897A JP 2011069897 A JP2011069897 A JP 2011069897A JP 5929000 B2 JP5929000 B2 JP 5929000B2
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- 229910052782 aluminium Inorganic materials 0.000 title claims description 95
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 87
- 239000011888 foil Substances 0.000 title claims description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000007747 plating Methods 0.000 claims description 40
- -1 aluminum halide Chemical class 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 12
- 150000003457 sulfones Chemical class 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 229910000039 hydrogen halide Inorganic materials 0.000 claims description 7
- 239000012433 hydrogen halide Substances 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 6
- 150000003512 tertiary amines Chemical class 0.000 claims description 5
- 150000001450 anions Chemical class 0.000 claims description 4
- 150000003141 primary amines Chemical class 0.000 claims description 4
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 4
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 4
- 150000003335 secondary amines Chemical class 0.000 claims description 3
- 239000000463 material Substances 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 15
- 239000011148 porous material Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 10
- 239000002585 base Substances 0.000 description 9
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000005703 Trimethylamine hydrochloride Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- SZYJELPVAFJOGJ-UHFFFAOYSA-N trimethylamine hydrochloride Chemical compound Cl.CN(C)C SZYJELPVAFJOGJ-UHFFFAOYSA-N 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000011149 active material Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000005486 organic electrolyte Substances 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- HBOOMWHZBIPTMN-UHFFFAOYSA-N 1-hexylsulfonylhexane Chemical compound CCCCCCS(=O)(=O)CCCCCC HBOOMWHZBIPTMN-UHFFFAOYSA-N 0.000 description 1
- YBJCDTIWNDBNTM-UHFFFAOYSA-N 1-methylsulfonylethane Chemical compound CCS(C)(=O)=O YBJCDTIWNDBNTM-UHFFFAOYSA-N 0.000 description 1
- JEXYCADTAFPULN-UHFFFAOYSA-N 1-propylsulfonylpropane Chemical compound CCCS(=O)(=O)CCC JEXYCADTAFPULN-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 1
- 229910013870 LiPF 6 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- BICAGYDGRXJYGD-UHFFFAOYSA-N hydrobromide;hydrochloride Chemical compound Cl.Br BICAGYDGRXJYGD-UHFFFAOYSA-N 0.000 description 1
- 150000003840 hydrochlorides Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- BAVYZALUXZFZLV-UHFFFAOYSA-N mono-methylamine Natural products NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 description 1
- UPOHIXYDQZCJLR-UHFFFAOYSA-J tetraethylazanium tetrafluoride Chemical compound C(C)[N+](CC)(CC)CC.[F-].[F-].[F-].[F-].C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC.C(C)[N+](CC)(CC)CC UPOHIXYDQZCJLR-UHFFFAOYSA-J 0.000 description 1
- DDFYFBUWEBINLX-UHFFFAOYSA-M tetramethylammonium bromide Chemical compound [Br-].C[N+](C)(C)C DDFYFBUWEBINLX-UHFFFAOYSA-M 0.000 description 1
- RXMRGBVLCSYIBO-UHFFFAOYSA-M tetramethylazanium;iodide Chemical compound [I-].C[N+](C)(C)C RXMRGBVLCSYIBO-UHFFFAOYSA-M 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Cell Electrode Carriers And Collectors (AREA)
Description
本発明は、多孔質アルミニウム箔の製造方法に関する。 The present invention relates to a method for producing a porous aluminum foil.
携帯電話やノートパソコンなどのモバイルツールの電源に、大きなエネルギー密度を持ち、かつ、放電容量の著しい減少が無いリチウムイオン二次電池が用いられていることは周知の事実であるが、近年、モバイルツールの小型化に伴い、そこに装着されるリチウムイオン二次電池にも小型化の要請がなされている。また、地球温暖化防止対策などの観点からのハイブリッド自動車や太陽光発電などの技術の進展に伴い、電気二重層キャパシター、レドックスキャパシター、リチウムイオンキャパシターなどの大きなエネルギー密度を持つスーパーキャパシターの新しい用途展開が加速しつつあり、これらのさらなる高エネルギー密度化が要求されている。
リチウムイオン二次電池やスーパーキャパシターといった蓄電デバイスは、例えば、電解質としてLiPF6やNR4・BF4(Rはアルキル基)などの含フッ素化合物を含んだ有機電解液中に、正極と負極がポリオレフィンなどからなるセパレータを介して配された構造を持つ。正極はLiCoO2(コバルト酸リチウム)や活性炭などの正極活物質と正極集電体からなるとともに、負極はグラファイトや活性炭などの負極活物質と負極集電体からなり、それぞれの形状は集電体の表面に活物質を塗布してシート状に成型したものが一般的である。各電極とも、大きな電圧がかかることに加え、腐食性が高い含フッ素化合物を含んだ有機電解液に浸漬されることから、特に、正極集電体の材料は、電気伝導性に優れるとともに、耐腐食性に優れることが求められる。このような事情から、現在、正極集電体の材料としては、ほぼ100%に、電気良導体であり、かつ、表面に不働態膜を形成することで優れた耐腐食性を有するアルミニウムが採用されている(負極集電体の材料としては銅やニッケルなどが挙げられる)。
It is a well-known fact that lithium-ion secondary batteries with large energy density and no significant reduction in discharge capacity are used as the power source for mobile tools such as mobile phones and laptop computers. With the downsizing of tools, there is a demand for miniaturization of lithium ion secondary batteries attached to the tools. In addition, with the advancement of technologies such as hybrid vehicles and solar power generation from the viewpoint of global warming prevention measures, new applications of supercapacitors with large energy density such as electric double layer capacitors, redox capacitors and lithium ion capacitors will be developed. Accelerating, and further higher energy density is required.
An electricity storage device such as a lithium ion secondary battery or a supercapacitor has a positive electrode and a negative electrode made of polyolefin in an organic electrolyte containing a fluorine-containing compound such as LiPF 6 or NR 4 .BF 4 (R is an alkyl group) as an electrolyte. It has a structure that is arranged through a separator consisting of. The positive electrode is composed of a positive electrode active material such as LiCoO 2 (lithium cobaltate) and activated carbon and a positive electrode current collector, and the negative electrode is composed of a negative electrode active material such as graphite and activated carbon and a negative electrode current collector, and each shape is a current collector. In general, an active material is applied to the surface of the material and formed into a sheet shape. In addition to applying a large voltage to each electrode, it is immersed in an organic electrolyte containing a highly corrosive fluorine-containing compound, so that the material of the positive electrode current collector is particularly excellent in electrical conductivity and resistance. It is required to be excellent in corrosiveness. Under such circumstances, as the material of the positive electrode current collector, aluminum that is a good electrical conductor and has excellent corrosion resistance by forming a passive film on the surface is adopted as the material of the positive electrode current collector. (Examples of the material for the negative electrode current collector include copper and nickel).
蓄電デバイスの小型化や高エネルギー密度化のための方法の一つとして、シート状に成型された電極を構成する集電体として用いる金属部材を多孔質化し、空孔を利用して金属部材を圧縮することでその厚みを薄くしたり、空孔に活物質を担持させたりする方法が考えられている。かかる観点から、本発明者らは、多孔質基材の表面に電気アルミニウムめっきによってアルミニウム被膜を形成した後、多孔質基材を除去することで得られるアルミニウム多孔質材を特許文献1において提案している。しかしながら、より簡易な方法でアルミニウム部材を多孔質化できればより望ましい。 As one of the methods for downsizing and increasing the energy density of an electricity storage device, a metal member used as a current collector constituting an electrode molded into a sheet shape is made porous, and the metal member is made available by using pores. A method of reducing the thickness by compressing or supporting an active material in pores has been considered. From this viewpoint, the present inventors have proposed an aluminum porous material obtained by removing the porous substrate after forming an aluminum film on the surface of the porous substrate by electroaluminum plating in Patent Document 1. ing. However, it is more desirable if the aluminum member can be made porous by a simpler method.
そこで本発明は、多孔質アルミニウム部材としての多孔質アルミニウム箔の簡易な製造方法を提供することを目的とする。 Then, this invention aims at providing the simple manufacturing method of the porous aluminum foil as a porous aluminum member.
本発明者は、これまでアルミニウムの電気めっき技術について精力的に研究を行ってきているが、その研究成果として、ジアルキルスルホンにアルミニウムハロゲン化物を溶解して調製しためっき液を用いる方法を開発している(特開2008−31551号公報)。そこで本発明者は、このめっき液を用いた電解法によるアルミニウム箔の製造を試みたところ、このめっき液は、めっき処理中に塩化水素ガスが発生しにくいといった利点や、8A/dm2以上の電流密度を印加しても安定なめっき処理が可能なため、成膜速度が速いといった利点があるものの、基材の表面に形成されるアルミニウム被膜は硬く延性に乏しいため、当該被膜を基材から剥離する際に破れてしまうといった現象が起こることがわかった。そこでこの問題を解決するために鋭意検討を重ねた結果、めっき液に所定の含窒素化合物を添加することで、より速い成膜速度で延性に富む高純度のアルミニウム箔が得られることを見出した(国際公開第2011/001932号公報)。さらに本発明者が研究を進めたところ、こうして得たアルミニウム箔に対して所定の温度で熱処理を行うと、全く意外にも、箔の内部に多数の空孔が生成し、箔を多孔質化することができることを見出した。 The present inventor has been energetically researching aluminum electroplating technology, and as a result of the research, developed a method using a plating solution prepared by dissolving aluminum halide in dialkyl sulfone. (Japanese Patent Laid-Open No. 2008-31551). Then, when this inventor tried manufacture of the aluminum foil by the electrolytic method using this plating solution, this plating solution has the advantage that hydrogen chloride gas is hard to generate | occur | produce during a plating process, and 8A / dm < 2 > or more. Although stable plating treatment is possible even when a current density is applied, there is an advantage that the film forming speed is fast, but the aluminum film formed on the surface of the base material is hard and poor in ductility. It was found that a phenomenon such as tearing occurred when peeling. Therefore, as a result of intensive studies to solve this problem, it was found that a high purity aluminum foil with high ductility can be obtained at a higher film formation rate by adding a predetermined nitrogen-containing compound to the plating solution. (International Publication No. 2011/001932). Furthermore, when the present inventor further researched, when the aluminum foil thus obtained was heat-treated at a predetermined temperature, a number of pores were generated unexpectedly inside the foil, making the foil porous. Found that you can.
上記の知見に基づいて完成された本発明の多孔質アルミニウム箔の製造方法は、請求項1記載の通り、(1)ジアルキルスルホン、(2)アルミニウムハロゲン化物、および、(3)ハロゲン化アンモニウム、第一アミンのハロゲン化水素塩、第二アミンのハロゲン化水素塩、第三アミンのハロゲン化水素塩、一般式:R1R2R3R4N・X(R1〜R4は同一または異なってアルキル基、Xは第四アンモニウムカチオンに対するカウンターアニオンを示す)で表される第四アンモニウム塩からなる群から選択される少なくとも1つの含窒素化合物を少なくとも含むめっき液を用いた電解法によって基材の表面にアルミニウム被膜を形成した後、当該被膜を基材から剥離してアルミニウム箔を得、得られたアルミニウム箔に対して350〜700℃の温度範囲で熱処理を行うことで箔の内部に空孔を生成せしめることを特徴とする。 The manufacturing method of the porous aluminum foil of the present invention completed based on the above knowledge is as described in claim 1, (1) dialkyl sulfone, (2) aluminum halide, and (3) ammonium halide, Primary amine hydrohalide, secondary amine hydrohalide, tertiary amine hydrohalide, general formula: R 1 R 2 R 3 R 4 N · X (R 1 to R 4 are the same or Differently from an alkyl group, and X represents a counter anion for a quaternary ammonium cation) by an electrolytic method using a plating solution containing at least one nitrogen-containing compound selected from the group consisting of quaternary ammonium salts. After forming an aluminum film on the surface of the material, the film is peeled off from the base material to obtain an aluminum foil. Wherein the allowed to produce pores inside the foil by performing heat treatment at a temperature range of 50 to 700 ° C..
本発明によれば、多孔質アルミニウム箔の簡易な製造方法を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the simple manufacturing method of porous aluminum foil can be provided.
本発明の多孔質アルミニウム箔の製造方法は、(1)ジアルキルスルホン、(2)アルミニウムハロゲン化物、および、(3)ハロゲン化アンモニウム、第一アミンのハロゲン化水素塩、第二アミンのハロゲン化水素塩、第三アミンのハロゲン化水素塩、一般式:R1R2R3R4N・X(R1〜R4は同一または異なってアルキル基、Xは第四アンモニウムカチオンに対するカウンターアニオンを示す)で表される第四アンモニウム塩からなる群から選択される少なくとも1つの含窒素化合物を少なくとも含むめっき液を用いた電解法によって基材の表面にアルミニウム被膜を形成した後、当該被膜を基材から剥離してアルミニウム箔を得、得られたアルミニウム箔に対して350〜700℃の温度範囲で熱処理を行うことで箔の内部に空孔を生成せしめることを特徴とするものである。 The method for producing the porous aluminum foil of the present invention comprises (1) dialkyl sulfone, (2) aluminum halide, and (3) ammonium halide, a primary amine hydrogen halide salt, and a secondary amine hydrogen halide. Salt, tertiary amine hydrogen halide salt, general formula: R 1 R 2 R 3 R 4 N · X (R 1 to R 4 are the same or different, alkyl group, X represents counter anion for quaternary ammonium cation) The aluminum film is formed on the surface of the base material by an electrolytic method using a plating solution containing at least one nitrogen-containing compound selected from the group consisting of quaternary ammonium salts represented by the following formula: To obtain an aluminum foil, and heat treatment is performed on the obtained aluminum foil in a temperature range of 350 to 700 ° C. It is characterized in that allowed to produce a vacancy part.
本発明の多孔質アルミニウム箔の製造方法において用いるめっき液に含ませるジアルキルスルホンとしては、ジメチルスルホン、ジエチルスルホン、ジプロピルスルホン、ジヘキシルスルホン、メチルエチルスルホンなどのアルキル基の炭素数が1〜6のもの(直鎖状でも分岐状でもよい)を例示することができるが、良好な電気伝導性や入手の容易性などの観点からはジメチルスルホンを好適に採用することができる。 The dialkyl sulfone contained in the plating solution used in the method for producing the porous aluminum foil of the present invention has 1 to 6 carbon atoms in the alkyl group such as dimethyl sulfone, diethyl sulfone, dipropyl sulfone, dihexyl sulfone, and methyl ethyl sulfone. Examples thereof (which may be linear or branched) can be exemplified, but dimethyl sulfone can be preferably employed from the viewpoint of good electrical conductivity and availability.
アルミニウムハロゲン化物としては、塩化アルミニウムや臭化アルミニウムなどを例示することができるが、アルミニウムの析出を阻害する要因となるめっき液に含まれる水分の量を可能な限り少なくするという観点から、用いるアルミニウムハロゲン化物は無水物であることが望ましい。 Examples of the aluminum halide include aluminum chloride and aluminum bromide, but from the viewpoint of minimizing the amount of moisture contained in the plating solution which is a factor that hinders the precipitation of aluminum. The halide is preferably anhydrous.
含窒素化合物として採用することができるハロゲン化アンモニウムとしては、塩化アンモニウムや臭化アンモニウムなどを例示することができる。また、第一アミン〜第三アミンとしては、メチルアミン、ジメチルアミン、トリメチルアミン、エチルアミン、ジエチルアミン、トリエチルアミン、プロピルアミン、ジプロピルアミン、トリプロピルアミン、ヘキシルアミン、メチルエチルアミンなどのアルキル基の炭素数が1〜6のもの(直鎖状でも分岐状でもよい)を例示することができる。ハロゲン化水素としては、塩化水素や臭化水素などを例示することができる。一般式:R1R2R3R4N・X(R1〜R4は同一または異なってアルキル基、Xは第四アンモニウムカチオンに対するカウンターアニオンを示す)で表される第四アンモニウム塩におけるR1〜R4で示されるアルキル基としては、メチル基、エチル基、プロピル基、ヘキシル基などの炭素数が1〜6のもの(直鎖状でも分岐状でもよい)を例示することができる。Xとしては塩素イオンや臭素イオンやヨウ素イオンなどのハロゲン化物イオンの他、BF4 −やPF6 −などを例示することができる。具体的な化合物としては、塩化テトラメチルアンモニウム、臭化テトラメチルアンモニウム、ヨウ化テトラメチルアンモニウム、四フッ化ホウ素テトラエチルアンモニウムなどを例示することができる。好適な含窒素化合物としては、速い成膜速度で延性に富む高純度のアルミニウム箔の製造を容易にする点において第三アミンの塩酸塩、例えばトリメチルアミン塩酸塩を挙げることができる。 Examples of the ammonium halide that can be employed as the nitrogen-containing compound include ammonium chloride and ammonium bromide. In addition, as primary amine to tertiary amine, the carbon number of alkyl groups such as methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, propylamine, dipropylamine, tripropylamine, hexylamine, methylethylamine, etc. 1 to 6 (which may be linear or branched) can be exemplified. Examples of the hydrogen halide include hydrogen chloride and hydrogen bromide. R in a quaternary ammonium salt represented by the general formula: R 1 R 2 R 3 R 4 N · X (R 1 to R 4 are the same or different and are an alkyl group, X represents a counter anion for a quaternary ammonium cation) Examples of the alkyl group represented by 1 to R 4 include those having 1 to 6 carbon atoms (which may be linear or branched) such as a methyl group, an ethyl group, a propyl group, and a hexyl group. Examples of X include halide ions such as chlorine ions, bromine ions and iodine ions, as well as BF 4 − and PF 6 − . Specific examples of the compound include tetramethylammonium chloride, tetramethylammonium bromide, tetramethylammonium iodide, and tetraethylammonium tetrafluoride. Suitable nitrogen-containing compounds include hydrochlorides of tertiary amines such as trimethylamine hydrochloride in terms of facilitating the production of high-purity aluminum foil having a high ductility at a high film formation rate.
ジアルキルスルホン、アルミニウムハロゲン化物、含窒素化合物の配合割合は、例えば、ジアルキルスルホン10モルに対し、アルミニウムハロゲン化物は1.5〜4.0モルが望ましく、2.0〜3.5モルがより望ましい。含窒素化合物は0.001〜2.0モルが望ましく、0.005〜1.5モルがより望ましい。アルミニウムハロゲン化物の配合量がジアルキルスルホン10モルに対し1.5モルを下回ると形成されるアルミニウム被膜が黒ずんでしまう現象(焼けと呼ばれる現象)が発生する恐れや成膜効率が低下する恐れがある一方、4.0モルを超えるとめっき液の液抵抗が高くなりすぎることでめっき液が発熱して分解する恐れがある。また、含窒素化合物の配合量がジアルキルスルホン10モルに対し0.001モルを下回ると配合することの効果、即ち、めっき液の電気伝導性の改善に基づく高電流密度印加でのめっき処理の実現による成膜速度の向上、アルミニウム箔の高純度化や延性の向上などの効果が得られにくくなる恐れがある一方、2.0モルを超えるとめっき液の組成が本質的に変わってしまうことでアルミニウムが析出しなくなってしまう恐れがある。 The blending ratio of the dialkyl sulfone, the aluminum halide, and the nitrogen-containing compound is, for example, preferably 1.5 to 4.0 mol, more preferably 2.0 to 3.5 mol for the aluminum halide with respect to 10 mol of the dialkyl sulfone. . The nitrogen-containing compound is preferably 0.001 to 2.0 mol, more preferably 0.005 to 1.5 mol. If the blending amount of aluminum halide is less than 1.5 moles relative to 10 moles of dialkyl sulfone, the formed aluminum film may be darkened (a phenomenon called burning), or the film formation efficiency may be lowered. On the other hand, if it exceeds 4.0 moles, the plating solution may become too hot and decompose due to excessively high resistance of the plating solution. In addition, the effect of blending when the blending amount of the nitrogen-containing compound is less than 0.001 mole with respect to 10 moles of dialkyl sulfone, that is, realization of the plating treatment with high current density application based on the improvement of the electrical conductivity of the plating solution While it may be difficult to obtain effects such as improving the film formation rate, improving the purity of the aluminum foil, and improving ductility, the composition of the plating solution will change essentially when it exceeds 2.0 moles. There is a risk that aluminum will not precipitate.
電気めっき条件としては、例えば、めっき液の温度が80〜110℃、印加電流密度が2〜15A/dm2を挙げることができる。めっき液の温度の下限はめっき液の融点を考慮して決定されるべきものであり、望ましくは85℃、より望ましくは95℃である(めっき液の融点を下回るとめっき液が固化するのでめっき処理がもはや行えなくなる)。一方、めっき液の温度が110℃を超えると基材の表面に形成されたアルミニウム被膜とめっき液の間での反応が活発化し、アルミニウム被膜中に不純物が多く取り込まれることでその純度が低下する恐れがある。また、印加電流密度が2A/dm2を下回ると成膜効率が低下する恐れがある一方、15A/dm2を超えると含窒素化合物の分解などが原因で安定なめっき処理が行えなくなったり延性に富む高純度のアルミニウム箔が得られなくなったりする恐れがある。印加電流密度は3〜12A/dm2が望ましい。本発明のアルミニウム箔の製造方法において用いるめっき液の特筆すべき利点は、10A/dm2以上の電流密度を印加しても安定なめっき処理が可能なため、成膜速度の向上を図ることができる点にある。なお、めっき処理の時間は、アルミニウム箔の所望する厚み、めっき液の温度や印加電流密度などにも依存するが、通常、1〜300分間である(生産効率を考慮すると1〜30分間が望ましい)。めっき処理の環境は、めっき液の劣化を防いでその寿命の延長を図る観点から、乾燥雰囲気にすることが望ましい。 Examples of the electroplating conditions include a plating solution temperature of 80 to 110 ° C. and an applied current density of 2 to 15 A / dm 2 . The lower limit of the temperature of the plating solution should be determined in consideration of the melting point of the plating solution, desirably 85 ° C., more desirably 95 ° C. Processing is no longer possible). On the other hand, when the temperature of the plating solution exceeds 110 ° C., the reaction between the aluminum coating formed on the surface of the substrate and the plating solution is activated, and the purity is lowered by incorporating a large amount of impurities into the aluminum coating. There is a fear. Further, while the applied current density is deposited efficiency falls below 2A / dm 2 may be reduced, stable plating ductility or not be performed degradation and the cause of the nitrogen-containing compound exceeds 15A / dm 2 There is a risk that a high-purity aluminum foil that is rich cannot be obtained. Applied current density 3~12A / dm 2 is preferred. A notable advantage of the plating solution used in the method for producing an aluminum foil of the present invention is that a stable plating process can be performed even when a current density of 10 A / dm 2 or more is applied. It is in a point that can be done. The time for the plating treatment depends on the desired thickness of the aluminum foil, the temperature of the plating solution, the applied current density, etc., but is usually 1 to 300 minutes (in consideration of production efficiency, 1 to 30 minutes is desirable. ). The plating treatment environment is desirably a dry atmosphere from the viewpoint of preventing the deterioration of the plating solution and extending its life.
アルミニウム被膜を形成するための基材(陰極)としては、ステンレス板、チタン板、アルミニウム板、ニッケル板などを例示することができる。通常、基材からのアルミニウム被膜の剥離を容易ならしめるためには、基材の表面は鏡面加工が施されるなどすることによって可能な限り平滑であることが望ましいが、本発明において基材の表面に形成されたアルミニウム被膜は、基材に対してこのような加工を施さなくても剥離が容易であるという特徴を有する(その理由は必ずしも明らかではないが基材の表面にアルミニウム被膜が形成される際に基材に接する側のアルミニウム被膜の表面付近にめっき液に由来するSとClが濃化することが関係しているものと推察される)。なお、陽極の材質としては、例えばアルミニウムを例示することができる。基材からのアルミニウム被膜の剥離はバッチ的に行うことができる他、陰極ドラムを用いてアルミニウム被膜の形成と剥離を連続的に行うこともできる(例えば特開平6−93490号公報)。なお、アルミニウム被膜を基材から剥離するに先立って、表面にアルミニウム被膜が形成された基材の表面に付着しているめっき液を除去するための水洗を行った後、乾燥することが望ましい。 Examples of the substrate (cathode) for forming the aluminum coating include a stainless plate, a titanium plate, an aluminum plate, a nickel plate, and the like. Usually, in order to facilitate the peeling of the aluminum coating from the base material, it is desirable that the surface of the base material be as smooth as possible by performing mirror finishing or the like. The aluminum film formed on the surface has a feature that it can be easily peeled off even if such processing is not performed on the substrate (the reason is not necessarily clear, but the aluminum film is formed on the surface of the substrate). It is presumed that S and Cl derived from the plating solution are concentrated near the surface of the aluminum coating on the side in contact with the base material). In addition, as a material of an anode, aluminum can be illustrated, for example. The aluminum film can be peeled off from the substrate batchwise, or the aluminum film can be formed and peeled continuously using a cathode drum (for example, Japanese Patent Laid-Open No. 6-93490). Prior to peeling off the aluminum coating from the base material, it is desirable to dry it after washing with water to remove the plating solution adhering to the surface of the base material on which the aluminum coating is formed.
本発明の多孔質アルミニウム箔の製造方法においては、上記のようにして得たアルミニウム箔に対して350〜700℃の温度範囲で熱処理を行い、箔の内部に空孔を生成せしめて箔を多孔質化する。熱処理によってアルミニウム箔の内部に空孔が生成する理由は必ずしも明らかではないが、アルミニウム被膜を基材の表面に形成する際に被膜に取り込まれためっき液の成分が気化したりすることによるものであると推察される。アルミニウム箔に対する熱処理の温度範囲を350〜700℃と規定するのは、350℃を下回ると箔の内部に空孔を生成せしめることができなかったり、生成せしめるのに必要以上に時間を要したりする恐れがある一方、700℃を超えるとアルミニウム箔が溶融してしまう恐れがあるからである。350〜700℃の温度範囲でアルミニウム箔に対して熱処理を行うことで、例えば10秒間〜3時間の処理時間でアルミニウム箔の溶融を引き起こすことなく効果的に箔の内部に空孔を生成せしめることができる。なお、アルミニウム箔に対する熱処理は、例えば、大気雰囲気下、減圧雰囲気下、アルゴンガスや窒素ガスを利用した不活性ガス雰囲気下などで行えばよい。 In the method for producing a porous aluminum foil of the present invention, the aluminum foil obtained as described above is heat-treated in a temperature range of 350 to 700 ° C., and voids are generated inside the foil to make the foil porous. Qualify. The reason why pores are generated inside the aluminum foil by heat treatment is not necessarily clear, but it is because the components of the plating solution taken into the coating vaporize when the aluminum coating is formed on the surface of the substrate. It is assumed that there is. The temperature range of heat treatment for aluminum foil is defined as 350 to 700 ° C. If the temperature falls below 350 ° C., voids cannot be generated inside the foil, or it takes more time than necessary to generate it. On the other hand, if the temperature exceeds 700 ° C., the aluminum foil may be melted. By performing heat treatment on the aluminum foil in a temperature range of 350 to 700 ° C., for example, voids are effectively generated inside the foil without causing melting of the aluminum foil in a treatment time of 10 seconds to 3 hours, for example. Can do. The heat treatment for the aluminum foil may be performed, for example, in an air atmosphere, a reduced pressure atmosphere, or an inert gas atmosphere using argon gas or nitrogen gas.
本発明の多孔質アルミニウム箔の製造方法によって製造された多孔質アルミニウム箔は、蓄電デバイスの小型化や高エネルギー密度化のために、箔の内部に生成した空孔を利用して圧縮することでその厚みを薄くしたり、空孔に活物質を担持させたりすることが可能な蓄電デバイス用集電体などとしての利用が期待される。多孔質アルミニウム箔の厚みは5〜200μmが望ましい。厚みが5μmを下回ると集電体などとして用いるには強度が不十分となる恐れがある一方、200μmを超えると厚みが厚すぎて集電体などとして用いることが困難になる恐れがある。なお、本発明の多孔質アルミニウム箔の製造方法によって製造された多孔質アルミニウム箔に対し、パンチングなどの機械加工やエッチングなどの化成処理などを行ってもよい。こうした処理を行うことで箔の表裏を貫通する加工孔や箔の表面に凹凸を設ければ、箔の内部に生成した空孔と相俟ってより一層の箔の多孔質化を図ることができる。 The porous aluminum foil produced by the method for producing a porous aluminum foil of the present invention is compressed by utilizing pores generated inside the foil in order to reduce the size and increase the energy density of the electricity storage device. It is expected to be used as a current collector for an electricity storage device that can be reduced in thickness or loaded with active material in pores. The thickness of the porous aluminum foil is preferably 5 to 200 μm. If the thickness is less than 5 μm, the strength may be insufficient for use as a current collector or the like, while if it exceeds 200 μm, the thickness may be too thick to be difficult to use as a current collector or the like. The porous aluminum foil manufactured by the method for manufacturing a porous aluminum foil of the present invention may be subjected to chemical processing such as machining such as punching or etching. If the processing holes penetrating the front and back of the foil and unevenness are provided on the surface of the foil by performing such treatment, it is possible to further increase the porosity of the foil in combination with the voids generated inside the foil. it can.
以下、本発明を実施例によってさらに詳細に説明するが、本発明はこれに限定して解釈されるものではない。 EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is limited to this and is not interpreted.
実施例1:
ジメチルスルホン、無水塩化アルミニウム、トリメチルアミン塩酸塩をモル比で10:3:0.05の割合で混合し、110℃で溶解させて電解アルミニウムめっき液を調製した。陽極に純度99.99mass%のアルミニウム板、陰極(アルミニウム被膜を形成するための基材)にチタン板を用い、10A/dm2の印加電流密度で、めっき液を95℃に保って300rpmの攪拌速度で攪拌しながら電気めっき処理を17分間行った。17分後、表面にアルミニウム被膜が形成されたチタン板をめっき液から取り出し、水洗を行ってから乾燥した後、その端部からアルミニウム被膜とチタン板の間に介入させたピンセットをチタン板に沿って滑らせるように移動させると、アルミニウム被膜はチタン板から容易に剥離し、アルミニウム箔が得られた。こうして得たアルミニウム箔に対して大気雰囲気下において550℃で1時間の熱処理を行った。熱処理前と熱処理後のアルミニウム箔の断面を走査型電子顕微鏡(S−800:日立製作所社製、以下同じ)で観察した結果をそれぞれ図1と図2に示す。図1と図2から明らかなように、アルミニウム箔に対して熱処理を行うことで、箔の内部に大きさが0.05〜3μm程度の多数の空孔が生成した。なお、この多孔質アルミニウム箔の厚みは約25μmであった。
Example 1:
Dimethylsulfone, anhydrous aluminum chloride, and trimethylamine hydrochloride were mixed at a molar ratio of 10: 3: 0.05 and dissolved at 110 ° C. to prepare an electrolytic aluminum plating solution. An aluminum plate with a purity of 99.99 mass% is used as the anode, and a titanium plate is used as the cathode (base material for forming the aluminum coating). The plating solution is kept at 95 ° C. at an applied current density of 10 A / dm 2 and stirred at 300 rpm. The electroplating process was carried out for 17 minutes while stirring at a speed. After 17 minutes, the titanium plate with the aluminum film formed on the surface is taken out of the plating solution, washed with water and dried, and then tweezers interposed between the aluminum film and the titanium plate are slid along the titanium plate from the end. The aluminum film was easily peeled from the titanium plate and an aluminum foil was obtained. The aluminum foil thus obtained was heat-treated at 550 ° C. for 1 hour in an air atmosphere. The results of observing the cross section of the aluminum foil before and after heat treatment with a scanning electron microscope (S-800: manufactured by Hitachi, Ltd., the same shall apply hereinafter) are shown in FIGS. 1 and 2, respectively. As is clear from FIGS. 1 and 2, by heat-treating the aluminum foil, a large number of pores having a size of about 0.05 to 3 μm were generated inside the foil. The porous aluminum foil had a thickness of about 25 μm.
実施例2:
ジメチルスルホン、無水塩化アルミニウム、トリメチルアミン塩酸塩をモル比で10:3:0.01の割合で混合してめっき液を調製すること、印加電流密度を5A/dm2とすること、めっき処理時間を26分間とすること、熱処理を350℃で行うこと以外は実施例1と同様にして、厚みが約25μmである熱処理を行ったアルミニウム箔を得た。図3にその断面を走査型電子顕微鏡で観察した結果を示す。図3から明らかなように、このアルミニウム箔は内部に多数の空孔が生成したものであった。
Example 2:
Dimethylsulfone, anhydrous aluminum chloride, and trimethylamine hydrochloride are mixed at a molar ratio of 10: 3: 0.01 to prepare a plating solution, the applied current density is set to 5 A / dm 2, and the plating processing time is set. A heat-treated aluminum foil having a thickness of about 25 μm was obtained in the same manner as in Example 1 except that the heat treatment was performed at 350 ° C. for 26 minutes. FIG. 3 shows the result of observing the cross section with a scanning electron microscope. As is apparent from FIG. 3, this aluminum foil had a large number of pores formed therein.
実施例3:
ジメチルスルホン、無水塩化アルミニウム、トリメチルアミン塩酸塩をモル比で10:3:0.005の割合で混合してめっき液を調製すること、めっき処理時間を6分間とすること以外は実施例2と同様にして、厚みが約5μmである熱処理を行ったアルミニウム箔を得た。その断面を走査型電子顕微鏡で観察したところ、箔の内部に多数の空孔が存在していた。
Example 3:
Same as Example 2 except that dimethylsulfone, anhydrous aluminum chloride, and trimethylamine hydrochloride are mixed at a molar ratio of 10: 3: 0.005 to prepare a plating solution and the plating time is 6 minutes. Thus, an aluminum foil subjected to heat treatment having a thickness of about 5 μm was obtained. When the cross section was observed with a scanning electron microscope, many holes were present in the foil.
実施例4:
めっき処理時間を210分間とすること、熱処理を700℃で10秒間行うこと以外は実施例2と同様にして、厚みが約200μmである熱処理を行ったアルミニウム箔を得た。その断面を走査型電子顕微鏡で観察したところ、箔の内部に多数の空孔が存在していた。
Example 4:
A heat-treated aluminum foil having a thickness of about 200 μm was obtained in the same manner as in Example 2 except that the plating time was 210 minutes and the heat treatment was performed at 700 ° C. for 10 seconds. When the cross section was observed with a scanning electron microscope, many holes were present in the foil.
比較例1:
熱処理を300℃で行うこと以外は実施例2と同様にして、厚みが約25μmである熱処理を行ったアルミニウム箔を得た。その断面を走査型電子顕微鏡で観察したところ、箔の内部には空孔が存在しなかった。
Comparative Example 1:
Except performing heat processing at 300 degreeC, it carried out similarly to Example 2, and obtained the aluminum foil which performed heat processing whose thickness is about 25 micrometers. When the cross section was observed with a scanning electron microscope, there were no pores inside the foil.
比較例2:
熱処理を750℃で12秒間行うこと以外は実施例2と同様にして熱処理を行ったアルミニウム箔を得ようとしたが、熱処理によって箔が溶融してしまい、熱処理後には箔の形態を維持していなかった。
Comparative Example 2:
An attempt was made to obtain an aluminum foil that was heat treated in the same manner as in Example 2 except that the heat treatment was performed at 750 ° C. for 12 seconds, but the foil melted by the heat treatment, and the shape of the foil was maintained after the heat treatment. There wasn't.
比較例3:
厚みが25μmの市販の圧延アルミニウム箔(日本製箔社製)に対して大気雰囲気下において500℃で1時間の熱処理を行った。熱処理前と熱処理後の圧延アルミニウム箔の断面を走査型電子顕微鏡で観察した結果をそれぞれ図4と図5に示す。図4と図5から明らかなように、圧延アルミニウム箔に対して熱処理を行っても結晶粒の肥大化(再結晶化)が起こっただけで、箔の内部に空孔は生成しなかった。
Comparative Example 3:
A commercially available rolled aluminum foil (manufactured by Nihon Foil Co., Ltd.) having a thickness of 25 μm was heat-treated at 500 ° C. for 1 hour in an air atmosphere. The results of observing the cross section of the rolled aluminum foil before and after heat treatment with a scanning electron microscope are shown in FIGS. 4 and 5, respectively. As apparent from FIGS. 4 and 5, even when the rolled aluminum foil was heat-treated, crystal grains were enlarged (recrystallized), and voids were not generated inside the foil.
本発明は、多孔質アルミニウム箔の簡易な製造方法を提供することができる点において産業上の利用可能性を有する。
The present invention has industrial applicability in that a simple method for producing a porous aluminum foil can be provided.
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