JP5900742B2 - Liquid ejecting apparatus, manufacturing method thereof, and manufacturing method of nozzle plate - Google Patents

Description

  The present invention relates to a liquid ejection device and a method for manufacturing the same.

  The mist discharge technique is a technique for discharging a liquid in a mist form by introducing ultrasonic waves generated from a vibrator such as a piezoelectric vibrator into a liquid and focusing the acoustic energy of the ultrasonic waves. A mist jet head using such a mist discharge technique has been conventionally proposed (see, for example, Patent Document 1).

  The mist jet head described in Patent Document 1 includes an ink tank and a piezoelectric transducer provided on the bottom surface of the ink tank. The ink tank has a cavity for storing ink therein, and the inner wall of this cavity is a reflecting wall. Further, an ejection port for ejecting ink is provided on the upper surface side of the cavity, that is, the side separated from the bottom surface on which the piezoelectric transducer is provided.

  In the mist jet head having such a structure, ultrasonic waves are introduced from the piezoelectric transducer to the ink in a substantially planar shape, and the ultrasonic waves are reflected by the reflection wall. The reflecting wall has a parabolic shape in the cross section, and the ejection port is disposed in the vicinity of the focal point of the parabola, so that the ultrasonic waves are focused on the ejection port, and the density of the acoustic energy in the ink at this portion is increased. Ink droplets are ejected from ejection ports.

  Further, a nozzle plate having nozzle holes on the discharge ports on the upper surface of the ink tank can be further provided. If a nozzle plate is provided, the ink droplet size can be controlled separately from these dimensions, and ink can be ejected in the form of a mist.

Japanese Patent No. 3242859

  In a conventional ultrasonic mist jet head, a method of arranging a plurality of ink tanks may be considered in order to increase the mist discharge amount. However, increasing the number of ink tanks has a problem that the structure becomes large, and the output varies depending on the ink tank, so that the discharge amount varies and becomes unstable.

  The present invention has been made in view of the above, and an object of the present invention is to obtain a liquid ejecting apparatus capable of stably increasing a mist discharge amount without increasing the structure and a manufacturing method thereof.

In order to achieve the above object, a liquid ejecting apparatus according to the present invention includes a tank having a paraboloid-shaped side wall surface that stores liquid and has a discharge port for discharging the liquid, and has a focal point near the discharge port. And an ultrasonic wave application unit that is provided in the tank and is isolated from the discharge port and applies an ultrasonic wave to the liquid, and the ultrasonic wave is reflected by the side wall surface and focused on the discharge port, In the liquid ejection device that ejects the liquid from the ejection port, a nozzle plate having a plurality of nozzle holes having a diameter smaller than that of the ejection port in a range smaller than the resonance wavelength size of the ultrasonic wave application unit, forming position provided on the discharge port side of the tank so as to overlap with the discharge port, the nozzle plate comprises an insulating layer and the semiconductor layer is composed of an SOI substrate, which are sequentially stacked on a silicon substrate, said sheet The substrate and the insulating layer are provided with openings over a region corresponding to a region where the plurality of nozzle holes are provided, and the semiconductor layer constituting the bottom surface of the openings is provided with the plurality of nozzle holes. the semiconductor layer is characterized Rukoto disposed in contact with said tank.

  According to this invention, since the nozzle plate having a plurality of nozzle holes having a diameter smaller than the discharge port in the range smaller than the resonance wavelength size of the ultrasonic wave application means is provided on the discharge port side of the tank, There is an effect that it is possible to stably increase the mist discharge amount without increasing the structure of the apparatus, eliminating variations in the discharge amount.

FIG. 1 is a side cross-sectional view schematically showing an example of the configuration of the liquid ejection device according to the first embodiment. FIG. 2 is a top view schematically showing an example of the configuration of the liquid ejection device according to the first embodiment. FIG. 3 is an enlarged cross-sectional view near the boundary between the tank and the nozzle plate. FIG. 4 is a diagram schematically showing how the mist is discharged from the nozzle plate. FIG. 5 is a schematic cross-sectional view schematically showing an example of a nozzle plate manufacturing method according to the first embodiment. FIG. 6 is a schematic cross-sectional view schematically showing an example of the structure of the nozzle plate according to the second embodiment. FIG. 7 is a schematic cross-sectional view schematically showing an example of a nozzle plate manufacturing method according to the second embodiment. FIG. 8 is a schematic sectional view schematically showing an example of the structure of the nozzle plate according to the third embodiment. FIG. 9 is a schematic cross-sectional view schematically illustrating an example of a nozzle plate manufacturing method according to the third embodiment.

  Hereinafter, a liquid ejecting apparatus and a manufacturing method thereof according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to these embodiments.

Embodiment 1 FIG.
FIG. 1 is a side sectional view schematically showing an example of the configuration of the liquid ejection device according to the first embodiment, and FIG. 2 is a top view schematically showing an example of the configuration of the liquid ejection device according to the first embodiment. It is. The liquid ejecting apparatus 10 includes a tank 11 that stores a liquid (here, ink). The tank 11 has a liquid chamber 111 that is a cavity for storing (storing) ink therein, and a side wall surface 112 of the liquid chamber 111 is formed in a parabolic shape, and the side wall surface Between 112, it has a shape of a tip-drawer shape toward the upper direction in FIG. In addition, an ejection port 113 for ejecting ink is provided on the upper surface side having a tapered shape in the liquid chamber 111. The discharge port 113 is disposed in the vicinity of the focal point of the side wall surface 112 having a parabolic shape.

  The liquid ejection device 10 has a holding plate 14 on the lower surface of the tank 11 in FIG. A film 15 is attached to a region of the holding plate 14 in contact with the liquid chamber 111, and a piezoelectric vibrator 16 made of a piezoelectric material is attached to the surface of the film 15 opposite to the tank 11. An AC power source 17 is connected to the piezoelectric vibrator 16 by wiring. The piezoelectric vibrator 16 and the AC power supply 17 constitute an ultrasonic wave application unit. Further, an O-ring 13 is provided on the lower surface of the tank 11 so as to surround the outer periphery of the side wall surface 112 constituting the liquid chamber 111, and when the holding plate 14 is fixed to the tank 11, the inside of the liquid chamber 111 is held airtight. The configuration is possible.

  The nozzle plate 12 is joined to the upper surface of the liquid ejection device 10 on the discharge port 113 side of the tank 11. The nozzle plate 12 has a plurality of nozzle holes 121 at the position where one discharge port 113 provided in the tank 11 is formed. As shown in FIG. 2, the nozzle hole 121 does not have to be rectangular, but may be circular, polygonal, or slit-shaped.

  In this way, the liquid is filled in the liquid chamber 111 which is a space constituted by the side wall surface 112 of the tank 11, the nozzle plate 12, the film 15, the O-ring 13 and the holding plate 14.

  Next, the operation of the liquid ejecting apparatus 10 having such a configuration will be described. FIG. 3 is an enlarged cross-sectional view near the boundary between the tank and the nozzle plate. After the liquid is injected into the tank 11, when a high-frequency voltage corresponding to the resonance frequency of the piezoelectric vibrator 16 is applied to the piezoelectric vibrator 16 by the AC power supply 17, ultrasonic waves are transmitted from the piezoelectric vibrator 16 in FIG. 3. The light is emitted upward (in the direction in which the nozzle plate 12 is disposed) as indicated by the arrow. Although this ultrasonic wave is reflected by the side wall surface 112, since the side wall surface 112 has a parabolic shape, it is focused on the point P1, which is its focal point. A surface traveling wave is generated by the converged pressure, and mist is discharged from the nozzle hole 121 of the nozzle plate 12.

  FIG. 4 is a diagram schematically showing how the mist is discharged from the nozzle plate. The ultrasonic wave generated by the piezoelectric vibrator 16 is concentrated on the focal point P1 due to the paraboloid shape of the side wall surface 112 as described above. If the wavelength of the generated ultrasonic wave is λ, the range of the wavelength λ around the focal point P1. Then the pressure is almost uniform. Therefore, by forming a plurality of nozzle holes 121 in the range of this wavelength λ, the amount of mist discharged increases by that number. However, the number of nozzle holes 121 cannot be increased indefinitely. This is because mist generation uses surface traveling waves. When the wavelength by the surface traveling wave is λc, the wavelength λc is expressed by the following equation (1).

Here, σ indicates the surface tension of the liquid, ρ indicates the density of the liquid, and f indicates the frequency of the ultrasonic waves. When the diameter of the opening outlet 121a of the nozzle hole 121 is Do, although depending on the value of the surface tension σ of the liquid, the diameter Do of the opening outlet 121a is increased to some extent in order to prevent interference between surface traveling waves. There is a need. In consideration of interference between surface traveling waves, the waves from both ends of the nozzle hole 121 are overlapped when the diameter Do of the opening outlet 121a satisfies the dimension of the following equation (2), so that the wave peaks and valleys overlap. Get smaller. Note that m is an integer of 1 or more.
mλc = Do (2)

On the contrary, when the diameter Do of the opening outlet 121a satisfies the dimension of the following equation (3), the wave crests and crests from both ends of the nozzle hole 121 overlap with each other, and the wave becomes large.
(M + 1/2) λc = Do (3)

When normal water or the like is considered as the liquid, the surface traveling wave is rapidly attenuated and the influence of the second wave is considered to be small. Therefore, when the case of m = 1 in the expression (3) is considered as the minimum value of the diameter Do of the opening outlet 121a, the minimum value of the diameter Do of the opening outlet 121a is defined by the following expression (4).
3λc / 2 <Do (4)

On the other hand, since a plurality of nozzle holes 121 can be formed in the range of the wavelength λ of the ultrasonic wave as described above, the diameter of the opening inlet 121b of the nozzle hole 121 is Di, the pitch of the nozzle holes 121 is Pc, and the wavelength When the number of nozzle holes 121 arranged in the range of λ is n (n is an integer of 2 or more), the following equation (5) is established.
λ ≧ (n−1) Pc + Di (5)

  As long as the equations (4) and (5) are satisfied, any number of nozzle holes 121 can be arranged.

  For example, when the resonance frequency is 10 MHz with water at room temperature, λc = 1.66 μm and λ = 150 μm. If Do = 10 μm, Di = 30 μm, Pc = 60 μm, and n = 3, three laterally ( Two-dimensionally, 3 × 3 = 9 nozzle holes 121 can be arranged. Further, the nozzle holes 121 are arranged in a honeycomb shape, so that the discharge amount can be increased most efficiently.

  Next, a method for manufacturing the nozzle plate 12 will be described. If the nozzle hole 121 is mechanically formed, a metal such as stainless steel can be used. However, in order to form a plurality of nozzle holes 121 in a thin plate and make the edge of the opening outlet 121a have an acute angle, it is desirable to form the nozzle holes 121 by etching using a silicon substrate.

  FIG. 5 is a schematic cross-sectional view schematically showing an example of a nozzle plate manufacturing method according to the first embodiment. First, as shown in FIG. 5A, protective films 21 and 22 are formed on both surfaces (both sides of a pair of opposing main surfaces) of a substrate 12a made of silicon. As the protective films 21 and 22, a film having resistance in a later etching process is used, and for example, a thermal oxide film can be used. In addition, the thickness of the protective films 21 and 22 is set so that the protective films 21 and 22 remain even after the etching process for opening the nozzle holes 121 in the substrate 12a as described later.

  Next, as shown in FIG. 5B, the protective film 22 on the lower surface side is selectively removed and patterned by a lithography technique and an etching technique so as to have an opening 22a in a portion where the nozzle hole 121 is formed. The The dimension of the pattern at this time is determined with reference to equations (2) and (3).

  Thereafter, as shown in FIG. 5C, the substrate 12a is etched by wet etching until the protective film 21 is exposed, using the protective film 22 with the opening 22a formed as a mask, and penetrates in the thickness direction of the substrate 12a. The nozzle hole 121 to be formed is formed. For example, when a thermal oxide film is used as the protective films 21 and 22, TMAH (Tetra-methyl-ammonium-hydroxide) having a large selectivity with respect to silicon (substrate 12a) is preferable as an etching solution. When a single crystal silicon substrate having a (100) plane orientation is used as the substrate 12a, the slope (110) plane formed by wet etching is at an angle of 54.7 °.

  Thereafter, as shown in FIG. 5D, the protective films 21 and 22 are removed. For example, when a thermal oxide film is used as the protective films 21 and 22, the protective films 21 and 22 can be removed by wet etching using hydrofluoric acid as a removing liquid. Thereby, the substrate 12a having the plurality of nozzle holes 121 becomes the nozzle plate 12, and the manufacturing method of the nozzle plate 12 is completed.

  In the above description, the nozzle plate 121 is manufactured by forming the nozzle holes 121 in the substrate 12a by wet etching. However, the nozzle holes 121 are formed in the substrate 12a by anisotropic dry etching. Also good. In this case, it is possible to prevent the nozzle hole 121 from spreading due to the taper as compared with the case where the nozzle hole 121 is formed by wet etching on the (100) plane single crystal silicon substrate described above. As a result, the nozzle hole 121 can be formed with an increased density. In this case, it is not necessary to use a single crystal silicon substrate as the substrate 12a, and a polycrystalline silicon substrate can be used.

  Thereafter, the nozzle plate 12 manufactured as described above is joined to the tank 11 manufactured by a known method to manufacture the liquid ejection device. At this time, when the nozzle plate 12 is formed of a silicon substrate, if the material of the tank 11 is formed of glass, it is possible to perform accurate positioning between the tank 11 and the nozzle plate 12 by anodic bonding. . In addition, when the material of the tank 11 is silicon, it is possible to perform accurate alignment between the tank 11 and the nozzle plate 12 by surface activation bonding using plasma.

  According to the first embodiment, since the nozzle plate 12 having the plurality of nozzle holes 121 is provided above the discharge port 113 of the liquid chamber 111 of one tank 11, the nozzle holes 121 are not increased without increasing the tank 11. As a result, it is possible to increase the discharge amount of the mist-like liquid. Further, since the liquid is ejected in the form of mist by the ultrasonic wave from one ultrasonic wave generating unit provided in the liquid chamber 111 of the tank 11, the ultrasonic wave from the ultrasonic wave generating unit provided in each of the liquid chambers of the plurality of tanks. Compared with the case where liquid is discharged by sound waves, there is also an effect that there is no variation in the discharge amount and the discharge is stable.

Embodiment 2. FIG.
FIG. 6 is a schematic cross-sectional view schematically showing an example of the structure of the nozzle plate according to the second embodiment. As shown in this figure, the nozzle plate 12 uses an SOI (Silicon on Insulator) substrate 12b in which an insulating layer 123 such as a SiO ₂ layer and a semiconductor layer 124 such as a silicon layer are sequentially stacked on a silicon substrate 122. And a structure in which a plurality of nozzle holes 121 are formed in the semiconductor layer 124 in the opening 125. Have The thickness of the silicon substrate 122 is about the same as that of the nozzle plate 12 of the first embodiment and can be about 300 to 600 μm, and the thickness of the semiconductor layer 124 can be about 5 to 50 μm. In addition, the same code | symbol is attached | subjected to the component same as Embodiment 1, and the description is abbreviate | omitted.

  FIG. 7 is a schematic cross-sectional view schematically showing an example of a nozzle plate manufacturing method according to the second embodiment. First, as illustrated in FIG. 7A, protective films 21 and 22 are formed on both surfaces of an SOI substrate 12 b in which an insulating layer 123 and a semiconductor layer 124 are stacked on a silicon substrate 122. As in the first embodiment, the protective films 21 and 22 are resistant to the subsequent etching process, and are formed with such a thickness that the protective films 21 and 22 remain on both surfaces of the SOI substrate 12b after the etching process. The As the protective films 21 and 22, for example, a thermal oxide film can be used. Next, in order to release the outlet of the nozzle hole 121, the protective film 21 on the silicon substrate 122 side is patterned by lithography and etching techniques so that the opening 21a is formed in the entire region where the nozzle hole 121 is formed.

  Thereafter, as shown in FIG. 7B, the silicon substrate 122 is etched by wet etching using the protective film 21 provided with the opening 21a as a mask and the insulating layer 123 as a stopper to form the opening 125. When the thermal oxide films are the protective films 21 and 22, TMAH having a large selectivity with respect to silicon is preferable as the etching solution.

  Next, as shown in FIG. 7C, the protective film 22 on the semiconductor layer 124 side is patterned by a lithography technique and an etching technique so as to have an opening 22a in a portion where the nozzle hole 121 is formed. The dimension of the pattern at this time is determined with reference to equations (2) and (3).

Thereafter, as shown in FIG. 7D, the semiconductor layer 124 is etched by wet etching until the insulating layer 123 is exposed, using the protective film 22 as a mask. Then, the protective films 21 and 22 formed on both surfaces of the SOI substrate 12b are removed by wet etching. At this time, the insulating layer 123 exposed in the opening 125 of the SOI substrate 12b together with the protective films 21 and 22 is also removed at the same time. When the protective films 21 and 22 are composed of thermal oxide films and the insulating layer 123 is composed of an SiO ₂ layer, for example, hydrofluoric acid can be used as the chemical solution. As a result, as shown in FIG. 6, the SOI substrate 12b having the plurality of nozzle holes 121 becomes the nozzle plate 12, and the manufacturing method of the nozzle plate 12 is completed.

  According to the second embodiment, since the nozzle holes 121 are formed in the semiconductor layer 124 of the SOI substrate 12b, the semiconductor layer 124 can be thinned, and a large number of nozzle holes 121 are formed as compared with the first embodiment. It becomes possible to do. In addition, the etching amount when forming the nozzle hole 121 becomes easier as compared with the case of etching a substrate having a thickness of several hundred μm or more as in the case of the first embodiment. The nozzle hole 121 having the opening outlet 121a having a size close to the defined minimum value can be formed. As a result, compared to the first embodiment, there is an effect that the discharge amount can be increased by the number of nozzle holes 121.

Embodiment 3 FIG.
FIG. 8 is a schematic sectional view schematically showing an example of the structure of the nozzle plate according to the third embodiment. As shown in this figure, the nozzle plate 12 is formed by multi-stage etching using a silicon substrate. That is, an opening 126 is formed on the lower surface of the nozzle plate 12 on the tank 11 side so as to include the formation region of the nozzle hole 121 at a predetermined depth that does not penetrate the silicon substrate 12c, and the bottom of the opening 126 ( A plurality of nozzle holes 121 are formed in the upper part). The entrance size Di2 of the opening 126 provided below the nozzle hole 121 is desirably smaller than the wavelength λ of the ultrasonic wave. This is because the liquid inside the opening 126 can have a uniform pressure distribution by making it smaller than the wavelength size where the pressure distribution by the ultrasonic waves is uniform. In addition, the same code | symbol is attached | subjected to the component same as Embodiment 1, and the description is abbreviate | omitted.

  FIG. 9 is a schematic cross-sectional view schematically illustrating an example of a nozzle plate manufacturing method according to the third embodiment. First, as shown in FIG. 9A, protective films 21 and 22 are formed on both surfaces of the silicon substrate 12c. The protective films 21 and 22 formed here are the same as those in the first embodiment. As the silicon substrate 12c, a single crystal substrate or a polycrystalline substrate may be used. Next, the protective film 22 is patterned by a lithography technique and an etching technique so that the opening 22b including the entire region where the nozzle hole 121 is formed is formed.

  Thereafter, as shown in FIG. 9B, the silicon substrate 12c is etched by wet etching using the protective film 22 provided with the openings 22b as a mask to form openings 126. At this time, etching is performed so that the silicon substrate 12c in the formation region of the nozzle hole 121 has a predetermined thickness. Further, when the thermal oxide film is the protective films 21 and 22, TMAH having a large selection ratio with respect to silicon is preferable as the etching solution.

  Next, as shown in FIG. 9C, the upper surface side protective film 21 is patterned by lithography and etching techniques so as to have an opening 21a in a portion where the nozzle hole 121 is formed. The dimension of the pattern at this time is determined with reference to equations (2) and (3).

  Thereafter, as shown in FIG. 9D, the silicon substrate 12c is etched from both sides of the silicon substrate 12c by wet etching to form nozzle holes 121. At this time, the etching shape from the upper surface side of the silicon substrate 12c is initially etched into a shape (forward taper shape) in which the hole seen in the normal anisotropic etching is narrowed, but the etching shape from the lower surface side of the silicon substrate 12c. After the nozzle hole 121 is connected to the opening portion 126, the edge portion of the opening portion 126 is etched to have a shape as shown in FIG. 9D (reverse taper shape).

  Finally, by removing the protective films 21 and 22, the silicon substrate 12c having the plurality of nozzle holes 121 becomes the nozzle plate 12, and the manufacturing method of the nozzle plate 12 is completed.

  According to the third embodiment, the opening 126 having an opening diameter smaller than the wavelength λ of the ultrasonic wave is provided on the lower surface side of the silicon substrate 12c, and the plurality of nozzle holes 121 are formed on the bottom surface (upper surface) of the opening 126. Therefore, the liquid having a uniform pressure distribution is narrowed at the inlet of the opening 126 of the first nozzle hole 121 and further narrowed by the plurality of nozzle holes 121, thereby increasing the discharge amount and The nozzle hole 121 has an effect that mist can be discharged uniformly.

DESCRIPTION OF SYMBOLS 10 Liquid ejection apparatus 11 Tank 12 Nozzle plate 12a Substrate 12b SOI substrate 12c, 122 Silicon substrate 13 O-ring 14 Holding plate 15 Film 16 Piezoelectric vibrator 17 AC power supply 21, 22 Protective film 21a, 22a, 22b Opening 111 Liquid chamber 112 side Wall surface 113 Discharge port 121 Nozzle hole 121a Opening exit 121b Opening entrance 123 Insulating layer 124 Semiconductor layers 125 and 126 Opening

Claims (11)

A tank for storing liquid and having a discharge port for discharging the liquid, and having a parabolic side wall surface having a focal point near the discharge port;
An ultrasonic wave application means that is provided in the tank so as to be isolated from the discharge port and applies an ultrasonic wave to the liquid;
In the liquid ejecting apparatus, the ultrasonic wave is reflected by the side wall surface and focused on the ejection port, and the liquid is ejected from the ejection port.
A nozzle plate having a plurality of nozzle holes having a diameter smaller than that of the discharge port in a range smaller than the resonance wavelength size of the ultrasonic wave application means, and the formation position of the nozzle hole overlaps with the discharge port. In preparation for the discharge port side ,
The nozzle plate is composed of an SOI substrate in which an insulating layer and a semiconductor layer are sequentially stacked on a silicon substrate,
The silicon substrate and the insulating layer are provided with openings over a region corresponding to a region where the plurality of nozzle holes are provided,
The plurality of nozzle holes are provided in the semiconductor layer constituting the bottom surface of the opening,
Liquid ejecting apparatus wherein the semiconductor layer is characterized Rukoto disposed in contact with said tank. A tank for storing liquid and having a discharge port for discharging the liquid, and having a parabolic side wall surface having a focal point near the discharge port;
An ultrasonic wave application means that is provided in the tank so as to be isolated from the discharge port and applies an ultrasonic wave to the liquid;
In the liquid ejecting apparatus, the ultrasonic wave is reflected by the side wall surface and focused on the ejection port, and the liquid is ejected from the ejection port.
A nozzle plate having a plurality of nozzle holes having a diameter smaller than that of the discharge port in a range smaller than the resonance wavelength size of the ultrasonic wave application means, and the formation position of the nozzle hole overlaps with the discharge port. In preparation for the discharge port side,
The nozzle plate is composed of a silicon substrate,
On the surface of the silicon substrate that is disposed in contact with the tank, an opening is provided over a region corresponding to a region where the plurality of nozzle holes are provided,
Liquids ejection device you wherein the plurality of nozzle holes are provided on the bottom surface of the opening. Liquid ejection apparatus according to claim 1 or 2, characterized in that placing the nozzle holes of the nozzle plate into a honeycomb shape. The liquid ejection device according to claim 2 , wherein a diameter of the opening on the tank side is smaller than the resonance wavelength size. A tank having a discharge port for storing liquid and discharging the liquid, and having a parabolic side wall surface having a focal point in the vicinity of the discharge port; and provided in the tank separately from the discharge port, Ultrasonic application means for applying an ultrasonic wave to the liquid, and the ultrasonic wave is reflected by the side wall surface and focused on the discharge port, and the liquid ejection device discharges the liquid from the discharge port. A method of manufacturing a nozzle plate provided on the discharge port side,
A protective film forming step of forming first and second protective films on the first and second main surfaces of the substrate facing each other;
A protective film patterning step of forming, in the first protective film, a plurality of opening patterns having a diameter smaller than that of the ejection port in a range smaller than a resonance wavelength size of the ultrasonic wave application unit;
A nozzle hole forming step of forming a plurality of nozzle holes by etching the substrate until the second protective film is exposed, using the patterned first protective film as a mask;
A protective film removing step of removing the first and second protective films;
The manufacturing method of the nozzle plate characterized by including. The substrate is a silicon substrate;
6. The method of manufacturing a nozzle plate according to claim 5 , wherein, in the nozzle hole forming step, the silicon substrate is etched by wet etching. 6. The method for manufacturing a nozzle plate according to claim 5 , wherein, in the nozzle hole forming step, the silicon substrate is etched by anisotropic dry etching. The substrate is an SOI substrate in which an insulating layer and a semiconductor layer are sequentially stacked on a silicon substrate,
After the protective film forming step and before the protective film patterning step, a pattern in which regions for forming the plurality of nozzle holes are opened is formed in the second protective film, and the second protective film is masked And an opening forming step of etching the silicon substrate using the insulating layer as a stopper to form an opening,
In the nozzle hole forming step, using the first protective film as a mask, the semiconductor layer is etched until the insulating layer is exposed to form the plurality of nozzle holes,
6. The method of manufacturing a nozzle plate according to claim 5 , wherein, in the protective film removing step, the insulating layer exposed at the bottom of the opening is also removed in addition to the first and second protective films. . The substrate is a silicon substrate;
After the protective film forming step and before the protective film patterning step, a pattern in which regions for forming the plurality of nozzle holes are opened is formed in the second protective film, and the second protective film is masked And further including an opening forming step of etching the silicon substrate to a predetermined depth to form an opening.
Wherein in the nozzle hole forming step, by etching the silicon substrate to the silicon substrate remaining on the bottom of the opening extends, according to claim 5, characterized in that to form a plurality of nozzle holes Manufacturing method of nozzle plate. A method for manufacturing a liquid jetting apparatus for manufacturing a liquid jetting apparatus by joining the nozzle plate manufactured by the method according to claim 5 and a tank,
The nozzle plate is made of silicon,
The tank is made of glass,
A method of manufacturing a liquid ejection device, wherein the nozzle plate and the tank are joined by anodic bonding. A method for manufacturing a liquid jetting apparatus for manufacturing a liquid jetting apparatus by joining the nozzle plate manufactured by the method according to claim 5 and a tank,
The nozzle plate is made of silicon,
The tank is made of silicon,
A method of manufacturing a liquid ejection device, wherein the nozzle plate and the tank are joined by surface activated joining using plasma.

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