JP5874804B2 - THIN FILM TRANSISTOR, ITS MANUFACTURING METHOD, DISPLAY DEVICE, AND ELECTRONIC DEVICE - Google Patents

Description

  The present invention relates to a thin film transistor, a manufacturing method thereof, a display device, and an electronic apparatus.

  As a device for driving an active matrix of a liquid crystal display device, it is widely known that a thin film transistor (TFT) is formed on a transparent substrate such as a glass substrate. In recent years, in order to support the display of a wide variety of information, higher definition of pixels of liquid crystal display devices has been promoted. Higher definition reduces the area of each pixel, but ensures a sufficient opening area so as not to decrease the display luminance of each pixel. As a result, it is inevitable that the area of the pixel that holds the electric charge is reduced, that is, the storage capacity is reduced. As the storage capacity decreases, the influence of the decrease in the charge of the pixel due to the leakage current (light leakage current) of the pixel transistor when the backlight is irradiated increases. That is, a decrease in the charge of the pixel causes a decrease in contrast.

  Further, in an organic electroluminescence display device using an organic electroluminescence device which is a self-luminous element, there is a form in which a TFT is formed on a transparent substrate as a bottom emission type active matrix driving device. In that case, when the light leakage current of the TFT increases due to external light incident through the glass substrate, the contrast is lowered. Therefore, when external light enters from the glass substrate side, a light shielding layer is formed between the TFT and the glass substrate so that external light does not enter the TFT. That is, a means for suppressing light leakage current by using a light shielding layer and suppressing incidence of light outside the TFT is employed.

  In Patent Document 1 (paragraphs 0015 to 0020), in a TFT having a so-called LDD (Lightly Doped Drain) structure in which low concentration impurity regions are provided on both sides of a gate electrode, a low concentration provided on both sides of a channel region and a channel region. A structure in which the impurity region is covered with a light shielding film in a plane has been proposed. Specifically, a low-concentration impurity in which a polycrystalline silicon film is formed on both sides of a channel region by irradiating an amorphous silicon film with laser light on a light shielding film made of an opaque metal. It is used as an area. The resulting polycrystalline silicon film has a large and uniform crystal grain size and a structure that can suppress the leakage current of the TFT during light irradiation.

  Patent Document 2 (paragraphs 0006 to 0010) proposes a TFT provided with a light shielding layer formed so as to cover only a boundary region between a drain region and a channel region. By suppressing the occurrence of a light leakage current in the boundary region between the drain region and the channel region that is in a reverse bias state, an effect of reducing the variation in characteristics (for example, threshold voltage) of the thin film transistor is obtained.

Japanese Patent Laid-Open No. 2001-284594 (Page 2 to Page 3) JP 2007-109868 (Page 3-4)

  However, the TFT disclosed in Patent Document 1 (Japanese Patent Laid-Open No. 2001-284594) has the following problems. Since the TFT disclosed in Patent Document 1 (Japanese Patent Laid-Open No. 2001-284594) has a high driving capability, a top gate type polycrystalline silicon TFT is adopted. Covers the light-shielding layer to isolate the source / drain region and channel region (polycrystalline silicon film) from the light-shielding layer made of a conductor that shields the entire source / drain region and channel region An insulating film is formed, and a silicon film is formed on the insulating film. Therefore, the source region / drain region and channel region (polycrystalline silicon film) have a laminated structure of polycrystalline silicon film / insulating film / light shielding layer (conductor layer), and the light shielding layer (conductor layer) An electric field is generated between the light shielding layer and the polycrystalline silicon film due to the potential. Therefore, depending on the potential of the light shielding layer, a channel is formed on the back surface side (polycrystalline silicon film / insulating film interface) of the polycrystalline silicon film in the channel region. As a result, an increase in off current and a shift in threshold voltage of the top gate type polycrystalline silicon TFT are caused. Further, in the liquid crystal display device driven by the TFT, display defects such as flicker occur.

  Instead of a light-shielding layer made of a conductor that shields the entire source region, drain region, and channel region, a light-shielding layer made of a conductor has a shape that shields a very small part of the channel region. However, the threshold voltage of the top gate type crystalline silicon TFT shifts. Even in a shape in which a very small part of the channel region is shielded, the mechanism causing the threshold voltage shift has not been elucidated. However, when a stacked structure of crystalline silicon film / insulating film / light-shielding layer (conductor layer) is formed, the potential of the light-shielding layer (conductor layer) is limited to a part of the channel region (crystallinity). It affects the potential of the silicon film / insulating film interface. For example, when a boundary between the gate electrode and the drain region, that is, a boundary region of a so-called gate electrode and an LDD (Lightly Doped Drain) structure exists immediately above the light shielding layer (conductor layer), the boundary region in the crystalline silicon film The electric field distribution is affected. If the electric field distribution in the crystalline silicon film in the boundary region is affected even if there is no influence on the electric field distribution in the crystalline silicon film in the channel region, the top gate type crystalline The possibility of causing a threshold shift of the silicon TFT is estimated.

  When the potential of the light shielding layer (conductor layer) is fixed, fluctuation of the electric field generated between the light shielding layer and the crystalline silicon film is prevented. For this purpose, a step of forming an electrode for applying a potential to the light shielding layer, specifically, a step of forming a contact hole for forming an electrode of the light shielding film, and a step of forming an electrode of the light shielding film are necessary. It becomes. There is also a problem that the manufacturing cost increases with the addition of the above steps. Further, in addition to the drain line (data line) and the gate line (scanning line), it is necessary to provide an electrode line for applying a constant potential to the light shielding film. Therefore, there is a problem that the aperture ratio of the pixel is reduced by the area occupied by the electrode lines for applying a constant potential to the light shielding film, and the luminance of the display device is reduced.

Further, in the top gate type polycrystalline silicon TFT described in Patent Document 2 (Japanese Patent Laid-Open No. 2007-109868), the n ⁻ layer and the n ⁻ layer are in contact with the channel region made of p-type polycrystalline silicon of the N-channel TFT. ^A so-called LDD (Lightly Doped Drain) structure is formed by providing a source region and a drain region composed of ⁺ layers and using n ⁻ layers. A light shielding layer (conductor layer) is formed to cover only the boundary region between the drain region and the channel region of the N-channel TFT. At this time, the laminated structure is formed of polycrystalline silicon film / insulating film / light-shielding layer (conductive layer) is directly above the light-shielding layer (conductive layer), n drain region ^- and the layer, the n ^- Only the boundary portion of the channel region made of p-type polycrystalline silicon that forms a pn junction with the layer exists. In the boundary region between the drain region and the channel region of the N-channel TFT, the pn junction is reverse-biased and depleted. As a result, it is disclosed that even if the potential of the light shielding layer (conductor layer) changes, the characteristic variation of the N-channel TFT can be suppressed.

  However, if a light-shielding layer (conductor layer) is present even under the channel region made of p-type crystalline silicon, the channel region made of p-type crystalline silicon immediately above the light-shielding layer (conductor layer) is not limited. ). In order to reduce the influence, it is preferable to fix the potential of the light shielding layer (conductor layer), and it is necessary to provide an electrode for applying a constant potential to the light shielding layer (conductor layer).

Further, in addition to the case where the pn junction formed at the boundary between the n ⁻ layer in the drain region and the channel region made of p-type crystalline silicon is reverse-biased, the n ⁻ layer in the source region and the p-type crystalline silicon When a pn junction formed at the boundary portion of the channel region is assumed to be reverse-biased, the boundary portion between the n ⁻ layer of the drain region and the channel region made of p-type crystalline silicon and the source region A light shielding layer (conductor layer) is provided on both the n ⁻ layer and the boundary portion of the channel region made of p-type crystalline silicon. Since the light shielding layer (conductor layer) is formed so as to cover only the boundary portion between the n ⁻ layer (LDD region) and the channel region made of p-type crystalline silicon, the light shielding layer (conductor layer) is produced. It is necessary to process in accordance with the length (LDD length) of the n ⁻ layer (LDD region).

When the N-channel TFT is turned on, the n ⁻ layer (LDD region) has an internal resistance. Therefore, when the length of the n ⁻ layer (LDD region) (LDD length) is increased, the on resistance of the TFT is increased. The value becomes higher. As a result, the on-current value of the TFT decreases. Further, in a liquid crystal display device driven by the N-channel TFT, if the on-current value of the TFT is significantly reduced, video signals cannot be sufficiently written to the pixels, resulting in display defects.

Therefore, the length of the n ⁻ layer (LDD region) (LDD length) needs to be shortened to some extent (for example, shorter than 3 μm). At that time, it is necessary to process the light shielding layer (conductor layer) with high accuracy, and there is a problem that the process margin is reduced.

In the N-channel TFT, both the drain region n ⁻ layer and the channel region made of p-type crystalline silicon and the source region n ⁻ layer and the channel region made of p-type crystalline silicon both. In addition, when adopting a structure in which a drain light shielding layer and a source light shielding layer are provided, the following problems occur when the potential of each light shielding layer (conductor layer) is not fixed.

While the N-channel TFT is in the “off state”, the drain region has the potential of the drain electrode (V _D (OFF)), and the source region has the potential of the source electrode (V _S (OFF)). Yes. The drain light-shielding layer covering only the boundary between the n ⁻ layer of the drain region and the channel region made of p-type crystalline silicon has a potential (V _BD (OFF) derived from the potential of the drain electrode (V _D (OFF)). )) Is induced. The source light shielding layer covering only the boundary between the n ⁻ layer of the source region and the channel region made of p-type crystalline silicon has a potential (V _BS (OFF) derived from the potential of the source electrode (V _S (OFF)). )) Is induced.

Thereafter, when the N-channel type TFT is turned on, n drain region ^- the layer (LDD region), the electric field due to the potential (V _BD (OFF)) of the drain light-blocking layer, the source region n ^- layer ( In the LDD region, an electric field due to the potential (V _BS (OFF)) of the source light-shielding layer is generated. As a result, n drain region ^- the layer (LDD region), n source regions ^- one of the layers (LDD regions) exhibit a relatively high resistance value, as a result, if the on-resistance of the TFT is increased There is. Accordingly, the on-current value of the TFT may decrease. Further, in a liquid crystal display device driven by the N-channel TFT, if the on-current value of the TFT is significantly reduced, video signals cannot be sufficiently written to the pixels, resulting in display defects.

On the other hand, while the N-channel TFT is held in the “on state”, the potential of the drain region is V _D (ON) and the potential of the source region is V _S (ON). Therefore, the potential of the drain light-shielding layer covering only the boundary between the n ⁻ layer and the p-type channel region of the drain region is changed from the potential in the off state (V _BD (OFF)) to the potential of the drain region in the on state (V _D (ON)) gradually changes to the potential (V _BD (ON)). The potential of the source light-shielding layer covering only the boundary portion between the n ⁻ layer of the source region and the channel region made of p-type crystalline silicon is changed from the potential in the off state (V _BS (OFF)) to the source region in the on state. It gradually changes to a potential (V _BS (ON)) derived from the potential (V _S (ON)).

As the N-channel TFT is turned on / off, the potential (V _BD (t)) of the drain light-shielding layer covering only the boundary between the n ⁻ layer of the drain region and the channel region made of p-type crystalline silicon is , And varies between an “off-state” potential (V _BD (OFF)) and an “on-state” potential (V _BD (ON)). The potential (V _BS (t)) of the source light-shielding layer covering only the boundary between the n ⁻ layer of the source region and the channel region made of p-type crystalline silicon is the “off-state” potential (V _BS (OFF) ) And the “on-state” potential (V _BS (ON)). When the cycle (τ) of the on / off operation is shortened, the changes in the potential (V _BD (t)) of the drain light shielding layer and the potential (V _BS (t)) of the source light shielding layer are changed. ) Cannot be followed. Specifically, when the repetition period (τ) of the on / off operation is short, the time average value of the potential (V _BD (t)) of the drain light shielding layer and the time of the potential (V _BS (t)) of the source light shielding layer The average value becomes “shifted state” according to the “Duty ratio” from the “off-state potential” to the “on-state potential” over time. As a result, the time average value of the on-resistance value of the TFT may seem to shift over time according to the “Duty ratio”. Therefore, apparently, the time average value of the on-current value of the TFT may shift over time according to the “Duty ratio” in the on state.

  In order to reduce the influence, it is preferable to fix the potential of the two light shielding layers (conductor layers), and it is necessary to provide electrodes for applying a constant potential to the two light shielding layers (conductor layers), respectively. .

  The present invention solves the problems described above. That is, an object of the present invention is not to provide an electrode for applying a constant potential to the light-shielding layer (conductor layer), which causes an increase in manufacturing cost, and the TFT operation layer: channel region, drain region / source THIN FILM TRANSISTOR HAVING A LIGHT-EMITTING LAYER EXCELLENT IN CONTROLLING LIGHT LEAKAGE CURRENT DURING LIGHT LIGHTING TO AREA, ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY DEVICE USED BY USING THIN FILM TRANSISTOR, AND LIQUID CRYSTAL DISPLAY DEVICE It is to provide an electronic device configured by incorporating.

  In order to solve the above problems, the present inventors first generate a light leakage current when light is irradiated from the insulating transparent substrate side to the TFT operation layer; the channel region, the drain region and the source region. The mechanism was considered.

For example, in the top-gate type crystalline silicon TFT shown in FIG. 2, in particular, a P-channel type TFT, an n-type crystalline silicon film is heavily doped with p-type impurities to form a p ⁺ region. The drain region and the source region are manufactured. Further, on both sides of the gate electrode, a p-type impurity is lightly doped from the surface side of the n-type crystalline silicon film to form a p region, thereby providing a low concentration impurity doped region. Of the portion sandwiched between the drain region and the source region, the portion excluding the low concentration impurity doped region is an n-type crystalline silicon region. The n-type crystalline silicon region directly under the gate electrode is a channel region. The low concentration impurity doped regions provided on both sides of the gate electrode function as an LDD region constituting a so-called LDD structure.

The drain region / LDD region / channel region has a p ⁺ / p / n structure, and a pn junction is formed at the boundary of the LDD region / channel region. The source region / LDD region / channel region also has a p ⁺ / p / n structure, and a pn junction is formed at the boundary of the LDD region / channel region. When the P-channel TFT is in the “off state”, the “off-state” gate voltage Vg (OFF) applied to the gate electrode of the P-channel TFT is the drain voltage V _D applied to the drain electrode. The source voltage V _S applied to the source electrode is normally set in a range of Vg (OFF)> V _S > V _D.

Therefore, when the P-channel TFT is in the “off state” and Vg (OFF)> V _S > V _D , the drain side pn junction is in the reverse bias state. As a result, when the gate voltage Vg (OFF) in the “off state” is applied to the gate electrode of the P-channel TFT, the p region in the p ⁺ / p / n structure at the drain side pn junction portion A wide depletion layer is formed at the boundary between (LDD region) / channel region (n region).

  In addition, the interface between the drain side LDD region / underlying layer is a p region / underlying layer (insulating film) junction. Due to this junction, the drain side LDD region in contact with the underlayer is depleted. A region is formed.

On the other hand, when the P-channel TFT is in the “off state”, the pn junction on the source side is normally in the forward bias state / zero bias state. Note that a depletion layer is also formed at the boundary between the p region (LDD region) and the channel region in the p ⁺ / p / n structure at the pn junction portion on the source side. In particular, on the gate insulating film side, when the source side pn junction is also in a reverse bias state, a depletion layer is formed in the source side LDD region / channel region pn junction. On the other hand, the channel region immediately below the gate electrode is composed of an n-type crystalline silicon layer, and most of the channel region on the gate insulating film side is depleted when the P-channel TFT is in the “off state”. Not.

When light is irradiated from the insulating transparent substrate side, light transmitted through the insulating transparent substrate and the base layer is incident on the crystalline silicon film. Of the light incident on the crystalline silicon film, only light having energy higher than the forbidden band width Eg of crystalline silicon is absorbed by the crystalline silicon film, and an electron-hole pair is generated. In the p ⁺ region (drain region / source region), since high-density holes exist, generated electrons recombine with the holes and disappear. Further, when the gate voltage Vg (OFF) in the “off state” is applied to the gate electrode of the P-channel TFT, electrons of a considerable density exist in the channel region (n region) immediately below the gate electrode. A substantial portion of the generated holes recombine with electrons and disappear.

On the other hand, a depletion layer resulting from the pn junction is formed at the drain side LDD region / channel region boundary, and a depletion region is also formed at the interface between the drain side LDD region and the underlying layer. . Therefore, the electrons and holes generated in the depletion layer and the depletion region hardly recombine, and the hole is transferred to the p ⁺ region (drain region) by the electric field in the depletion layer and the depletion region. Travel to the channel region (n region).

  On the gate insulating film side, when the source-side pn junction is also in a reverse bias state, a depletion layer is also formed in the source-side LDD region / channel region pn junction. The electrons and holes generated in the depletion layer on the source side recombine with electrons injected from the channel region side, and the electrons recombine with holes injected from the LDD region side.

  As a result, the depletion layer at the boundary portion (pn junction portion) of the LDD region / channel region on the drain side and the depletion region at the boundary portion (junction portion) of the LDD region / underlayer on the drain side may cause the depletion. It was conceived that electrons and holes generated in the layer and in the depletion region are the main cause of the photoleakage current.

  Therefore, the light incident on the depletion layer at the boundary portion (pn junction portion) of the LDD region / channel region on the drain side and the depletion region at the boundary portion (junction portion) of the LDD region / underlayer on the drain side is shielded. Thus, the inventors have conceived that generation of light leakage current can be effectively suppressed.

  Actually, when a light-shielding film is provided on the upper surface of the insulating transparent substrate, the light passing through the insulating transparent substrate and the underlying layer, and shielding the light incident on the crystalline silicon film, is directly under the gate electrode of the P-channel TFT. The channel region (n-type crystalline silicon) portion is not covered with a light shielding film, but the depletion layer at the boundary between the drain side LDD region / channel region and the boundary portion between the drain side LDD region / underlayer It was confirmed that generation of light leakage current can be effectively suppressed by shielding light incident on the depletion region of (junction portion).

  At that time, a structure in which an electrode for applying a constant potential is not provided for the light shielding film is selected, but the channel region (n-type crystalline silicon) portion immediately below the gate electrode of the P-channel TFT has a light shielding film. Therefore, the influence of the potential fluctuation of the light shielding film on the channel region (n-type crystalline silicon) portion is reduced. Therefore, it was confirmed that the shift amount of the threshold voltage of the TFT due to the fluctuation of the potential of the light shielding film is suppressed.

On the other hand, the drain region (p ⁺ region) and the drain side LDD region (p region), and the source region (p ⁺ region) and source side LDD region (p region) of the P-channel TFT are divided. The light shielding film is covered with two regions. The drain region and the LDD region on the drain side are affected by the potential (V _BD (t)) of the drain side region of the light shielding film. The source region and the LDD region on the source side are affected by the potential (V _BS (t)) of the source side region of the light shielding film. At that time, in the portion where the LDD region (p region) is formed, the range of influence is mainly the portion in contact with the base layer. Therefore, when the P-channel TFT is turned “on”, the on-resistance value is mainly the resistance of the P-channel and the LDD region formed on the gate insulating film side. That is, the region of the LDD region that is in contact with the base layer does not substantially contribute to the on-resistance value. Therefore, with the periodic on / off operation, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film become “off state It was also confirmed that even when the potential fluctuated between “potential” and “on-state potential”, the on-resistance value of the P-channel TFT did not substantially increase.

In particular, when a structure in which two regions of the divided light shielding film, the drain side region of the light shielding film and the source side region of the light shielding film are electrically connected in a region where the crystalline silicon film is not formed, is adopted. By the connecting portion, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film can be substantially equal (V _BD (t)). ≈V _BS (t)).

In a P-channel TFT, in a structure in which the drain side region of the light shielding film and the source side region of the light shielding film are electrically connected, an MIS junction (capacitor C _D ) composed of a drain region / underlayer / drain region of the light shielding film. This corresponds to a state where the MIS junction (capacitor C _S ) composed of the source region / underlayer / source region of the light shielding film is connected in series. In that situation, when the potential of the drain region (V _D (t)) and the potential of the source region (V _S (t)) are V _S (t)> V _D (t), the drain side region of the light shielding film Potential (V _BD (t)) and the source side region potential (V _BS (t)) of the light shielding film are V _S (t)> V _BS (t) ≈V _BD (t)> V _D (t) It was found that the above conditions were satisfied.

In particular, when V _S (t)> V _D (t), when reaching the steady state of “off state”, that is, the state where the charging of the capacitor C _D and the capacitor C _S is completed, the drain side region of the light shielding film Potential (V _BD (t)) and the source side region potential (V _BS (t)) of the light shielding film are V _S (t)> V _BS (t) = V _BD (t)> V _D (t) Satisfy the conditions. At that time, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film are equal to the potential (V _D (t)) of the drain region and the source region. Is maintained at an average potential (V _S (t)).

On the other hand, in the P-channel TFT, in the structure in which the drain side region of the light shielding film and the source side region of the light shielding film are electrically separated, a MIS junction (capacitor consisting of drain region / underlayer / drain side region of the light shielding film) C _D ), MIM junction (capacitor C _DIS ) composed of drain side region of light shielding film / underlying layer / source side region of light shielding film, capacitor MIS junction (capacitor C _S ) composed of source region / underlying layer / source side region of light shielding film ) Corresponds to the state of being connected in series. In this situation, if the potential of the drain region (V _D (t)) and the potential of the source region (V _S (t)) are V _S (t)> V _D (t), the drain side of the light shielding film The potential (V _BD (t)) of the region and the potential (V _BS (t)) of the source side region of the light shielding film are V _S (t) ≧ V _BS (t)> V _BD (t) ≧ V _D (t ) Was satisfied.

In particular, when V _S (t)> V _D (t), when the steady state of “off state”, that is, the state where the charging of the capacitor C _D , the capacitor C _DIS and the capacitor C _S is completed, the light shielding film is reached. The potential (V _BD (t)) of the drain side region and the potential (V _BS (t)) of the source side region of the light shielding film are V _S (t)> V _BS (t)> V _BD (t)> V _D The condition (t) is satisfied.

For example, in a structure in which the drain side region of the light shielding film and the source side region of the light shielding film are electrically connected, if the drain side region of the light shielding film and the source side region of the light shielding film are arranged symmetrically, the drain bias ( Even if the operation of periodically reversing V _D ) and the source bias (V _S ) is continued, in the steady state of “off state”, the potential (V _BD (t)) of the drain side region of the light shielding film and the light shielding The potential (V _BS (t)) of the source side region of the film is substantially maintained at V _BD (t) = V _BS (t). In addition, when performing a periodic on / off operation, a MIS junction (capacitor C _D ) composed of a drain region / underlayer / light shielding film drain side region, and a MIS composed of a source region / underlayer / light shielding film source side region. Even if charging / discharging of the junction (capacitor C _S ) does not occur promptly, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t) of the source side region of the light shielding film in the “off state”. It was found that the shift over time of t)) was suppressed.

On the other hand, in the structure in which the drain side region of the light shielding film and the source side region of the light shielding film are electrically separated, even if the drain side region of the light shielding film and the source side region of the light shielding film are symmetrically arranged, the drain bias ( When V _D ) and source bias (V _S ) are periodically inverted, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film Fluctuates periodically. In addition, when performing a periodic on / off operation, a MIS junction (capacitor C _D ) composed of a drain region / underlayer / light shielding film drain side region, and a MIS composed of a source region / underlayer / light shielding film source side region. If the MIM junction (capacitor C _DIS ) composed of the junction (capacitor C _S ) and the drain side region of the light shielding film / the base layer / the source side region of the light shielding film does not promptly charge / discharge, the light shielding film in the “off state”. It is assumed that a time-dependent shift of the potential (V _BD (t)) of the drain side region and the source side region (V _BS (t)) of the light shielding film is caused.

Accordingly, when the operation of periodically inverting the drain bias (V _D ) and the source bias (V _S ) is continued, or when the periodic on / off operation is performed, a coupling portion is provided to block light. It has been found that a shift with time of the potential (V _BD (t)) of the drain side region of the film and the potential (V _BS (t)) of the source side region of the light shielding film can be substantially suppressed. Of course, even if the periodic on / off operation is performed, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t) of the source side region of the light shielding film in the “off state”. ) Is held substantially constant, and it has been found that the on-resistance value of the P-channel TFT does not shift with time.

  Based on the above series of findings, the present inventors have completed the present invention.

First, the first embodiment of the present invention is the invention of the following thin film transistor. That is, the thin film transistor according to the first aspect of the present invention is:
A top gate type thin film transistor formed on a transparent substrate,
In the thin film transistor,
On the transparent substrate,
A patterned light-shielding film;
An underlayer,
A patterned crystalline silicon film;
A gate insulating film;
Patterned gate electrode films are sequentially stacked;
The patterned crystalline silicon film is
A channel region overlapping the patterned gate electrode film;
Two low-concentration impurity regions in contact with the channel region;
The patterned light shielding film is disposed so as not to overlap the channel region, and is disposed so that at least a part thereof overlaps in any of the two low concentration impurity regions of the two low concentration impurity regions. The thin film transistor is characterized.

In the thin film transistor according to the first aspect of the present invention,
The channel region comprises a region of a first conductivity type,
It is preferable that the two low-concentration impurity regions have a structure composed of a low-concentration impurity-doped region of the second conductivity type. For example, the channel region includes a first conductivity type region in which carriers are electrons, and the two low-concentration impurity regions include a second conductivity type low-concentration impurity doped region in which carriers are holes. It is preferable to select the structure.

  It is desirable to use an insulating transparent substrate as the transparent substrate. Further, it is desirable to use a base layer made of a light transmissive insulating material as the base layer. Of course, the patterned light-shielding film is preferably made of a light-impermeable conductive material. Furthermore, it is desirable that the patterned crystalline silicon film has two second-conductivity type high-concentration impurity doped regions used as a drain region and a source region.

Furthermore, the transparent substrate is an insulating transparent substrate;
The underlayer is a layer made of a light-transmissive insulating material;
The patterned light-shielding film is preferably in a form in which the entire film surface is surrounded by the transparent substrate and the base layer and is electrically isolated.

In addition, the patterned light shielding film is
Having a third region not located directly under the patterned crystalline silicon film;
The drain-side region of the light-shielding film and the source-side region of the light-shielding film, which are divided across the channel region, are electrically interconnected via the third region of the light-shielding film. It is preferable to do.

For example, one aspect of the thin film transistor according to the first aspect of the present invention is:
A top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate,
The thin film transistor
An insulating transparent substrate;
A patterned light-shielding film formed on the upper surface of the insulating transparent substrate;
A base layer made of a light-transmitting insulating material, formed to cover the upper surface of the patterned light-shielding film and the insulating transparent substrate;
A patterned crystalline silicon film formed on the upper surface of the underlayer;
A gate insulating film formed so as to cover the patterned crystalline silicon film and the upper surface of the base layer;
Comprising a patterned gate electrode film formed on an upper surface of the gate insulating film;
A gate electrode comprising the patterned gate electrode film;
The gate insulating film;
A channel region composed of a region of the first conductivity type immediately below the gate electrode of the patterned crystalline silicon film in contact with the gate insulating film;
A drain region formed of a high-concentration impurity-doped region of the second conductivity type formed in the patterned crystalline silicon film;
A source region formed of a high-concentration impurity doped region of the second conductivity type formed in the patterned crystalline silicon film;
An LDD region formed of a lightly doped impurity region of a second conductivity type formed on the surface side of the patterned crystalline silicon film in contact with the gate insulating film on both sides of the channel region;
The drain electrode and the source electrode, which are formed of electrode films and are formed so as to be electrically connected to the upper surface of the drain region and the source region, respectively,
Constitutes a field effect transistor;
In the on state of the field effect transistor,
By applying a gate voltage exceeding the threshold voltage to the gate electrode, a channel is formed,
A carrier flow path is formed between the drain region and the source region via the channel and the LDD regions on both sides thereof;
The patterned light-shielding film is
Made of light impermeable conductive material,
Surrounded by an insulative transparent substrate and an underlayer and electrically isolated;
The patterned light shielding film does not exist immediately below the channel region,
At least, the formation region of the patterned light shielding film overlaps with a part of the region immediately below the drain region and a part of the region immediately below the source region, respectively.
For each of the LDD regions provided on both sides of the channel region, a part of the region immediately below the LDD region and the formation region of the patterned light-shielding film are arranged to overlap each other. It is a thin film transistor.

The second aspect of the present invention is the following thin film transistor invention. That is, the thin film transistor according to the second aspect of the present invention is:
A top gate type thin film transistor formed on a transparent substrate,
In the thin film transistor,
On the transparent substrate,
A patterned light-shielding film;
An underlayer,
A patterned crystalline silicon film;
A gate insulating film;
Patterned gate electrode films are sequentially stacked;
The patterned crystalline silicon film is
A drain region and a source region composed of a high concentration impurity doped region,
A channel region of length L that overlaps the patterned gate electrode film;
On both sides of the gate electrode film, a drain-side LDD region having a length d and a source-side LDD region having a length d made of a low-concentration impurity doped region are provided in contact with the channel region;
The patterned light-shielding film is
It is divided into a drain side region and a source side region across the channel region,
Arranged so as not to overlap the channel region,
A gap having an interval x equal to or longer than the length L of the channel region is provided between the drain side region and the source side region of the divided light shielding film,
The region on the drain side of the divided light shielding film is disposed so as to overlap at least a part of the drain side LDD region having a length d and a part of the drain region,
The source-side region of the divided light-shielding film is a thin film transistor that is arranged so as to overlap at least a part of the source-side LDD region having a length d and a part of the source region.

In particular, with respect to the length L of the channel region, the length d of the drain side LDD region, and the length d of the source side LDD region,
The gap x provided between the drain side region of the light shielding film and the source side region of the light shielding film, which is divided across the channel region, is selected so as to satisfy the following formula (1). ing:
L + 2d ≧ x ≧ L Formula (1)
It is a thin film transistor characterized by this.

In the thin film transistor according to the second embodiment of the present invention,
The channel region comprises a region of a first conductivity type,
It is preferable that the drain side LDD region and the source side LDD region both have a structure composed of a second conductivity type low concentration impurity doped region. For example, the channel region includes a first conductivity type region in which carriers are electrons, and the two low-concentration impurity regions include a second conductivity type low-concentration impurity doped region in which carriers are holes. It is preferable to select the structure.

  It is desirable to use an insulating transparent substrate as the transparent substrate. Further, it is desirable to use a base layer made of a light transmissive insulating material as the base layer. Of course, the patterned light-shielding film is preferably made of a light-impermeable conductive material.

Furthermore, the transparent substrate is an insulating transparent substrate;
The underlayer is a layer made of a light-transmissive insulating material;
The patterned light-shielding film is preferably in a form in which the entire film surface is surrounded by the transparent substrate and the base layer and is electrically isolated.

In addition, the patterned light shielding film is
Having a third region not located directly under the patterned crystalline silicon film;
The drain-side region of the light-shielding film and the source-side region of the light-shielding film, which are divided across the channel region, are electrically interconnected via the third region of the light-shielding film. It is preferable to do.

For example, one aspect of the thin film transistor according to the second aspect of the present invention is:
A top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate,
The thin film transistor
An insulating transparent substrate;
A patterned light-shielding film formed on the upper surface of the insulating transparent substrate;
A base layer made of a light-transmitting insulating material, formed to cover the upper surface of the patterned light-shielding film and the insulating transparent substrate;
A patterned crystalline silicon film of a first conductivity type formed on the upper surface of the underlayer;
A gate insulating film formed so as to cover the patterned crystalline silicon film and the upper surface of the base layer;
Comprising a patterned gate electrode film formed on an upper surface of the gate insulating film;
A gate electrode having a gate length L _gate composed of the patterned gate electrode film;
The gate insulating film;
A channel region having a length L equal to the gate length L _gate , comprising a region of the first conductivity type immediately below the gate electrode of the gate length L _gate of the patterned crystalline silicon film in contact with the gate insulating film;
A drain region having a length L _D and a source region having a length L _{S made} of a heavily doped impurity region of a second conductivity type formed on a patterned crystalline silicon film on both sides of the gate electrode;
A long region comprising a lightly doped region of the second conductivity type formed between the channel region, the drain region and the source region on the surface side of the patterned crystalline silicon film in contact with the gate insulating film. A drain-side LDD region of length d and a source-side LDD region of length d;
The drain electrode and the source electrode, which are formed of electrode films and are formed so as to be electrically connected to the upper surface of the drain region and the source region, respectively,
Constitutes a field effect transistor;
In the on state of the field effect transistor,
By applying a gate voltage exceeding the threshold voltage to the gate electrode, a channel is formed,
Between the drain region and the source region, a drain region, a drain side LDD region, a channel, a source side LDD region, and a carrier flow path passing through the source region are formed;
The patterned light-shielding film is
Made of light impermeable conductive material,
Surrounded by an insulative transparent substrate and an underlayer and electrically isolated;
The patterned light-shielding film is
It is divided into a drain side region and a source side region across the channel region,
Arranged so as not to overlap the channel region,
A gap having an interval x equal to or longer than the length L of the channel region is provided between the drain side region and the source side region of the divided light shielding film,
The region on the drain side of the divided light shielding film is disposed so as to overlap at least a part of the drain side LDD region having a length d and a part of the drain region,
The source-side region of the divided light-shielding film is a thin film transistor that is arranged so as to overlap at least a part of the source-side LDD region having a length d and a part of the source region.

At that time, in the thin film transistor according to the second aspect of the present invention,
For the length L of the channel region, the length d of the drain side LDD region, and the length d of the source side LDD region,
The gap x provided between the drain side region of the light shielding film and the source side region of the light shielding film, which is divided across the channel region, is selected so as to satisfy the following formula (1). ing:
L + 2d ≧ x ≧ L Formula (1)
It is preferable.

The region on the drain side of the light shielding film and the region on the source side of the light shielding film, which are divided across the channel region,
The end on the gate electrode side of the drain side region of the light shielding film and the end on the gate electrode side of the source side region of the light shielding film are:
Desirably, the gate electrode is disposed so as to be symmetrical.

In the thin film transistor according to the first aspect of the present invention, and the thin film transistor according to the second aspect of the present invention,
The patterned light-shielding film is
A third region not located immediately below the patterned crystalline silicon film of the first conductivity type;
The region on the drain side of the light shielding film and the region on the source side of the light shielding film, which are divided across the channel region, are electrically interconnected via the third region of the light shielding film. It is preferable to adopt.

Moreover,
The high-concentration impurity doped region of the second conductivity type reaches the upper surface of the underlayer,
It is preferable to adopt a structure in which the second conductivity type low-concentration impurity doped region also reaches the upper surface of the underlayer.

In the thin film transistor according to the first aspect of the present invention, and the thin film transistor according to the second aspect of the present invention,
The top gate type field effect transistor is:
A structure including an interlayer insulating film formed so as to cover the upper surfaces of the gate electrode and the gate insulating film is desirable.

On the other hand, in the thin film transistor according to the first aspect of the present invention and the thin film transistor according to the second aspect of the present invention,
The first conductivity type is a conductivity type using holes as carriers,
The second conductivity type is a conductivity type using electrons as carriers,
The top gate type field effect transistor configured may be an N-channel type field effect transistor.

Or
The first conductivity type is a conductivity type using electrons as carriers,
The second conductivity type is a conductivity type using holes as carriers,
The top gate type field effect transistor configured may be a P-channel type field effect transistor.

The third aspect of the present invention is an invention of a method for producing a thin film transistor according to the first aspect of the present invention. That is, the manufacturing method of the thin film transistor according to the third aspect of the present invention is:
A method for producing a thin film transistor according to the first aspect of the present invention having the above-described configuration on a transparent substrate,
The method of manufacturing the thin film transistor includes
On the transparent substrate,
A patterned light-shielding film;
An underlayer,
A patterned crystalline silicon film;
A gate insulating film;
Forming a structure in which patterned gate electrode films are sequentially stacked;
The patterned crystalline silicon film is
A channel region overlapping the patterned gate electrode film;
Two low-concentration impurity regions in contact with the channel region;
The patterned light shielding film is disposed so as not to overlap the channel region, and is disposed so that at least a part thereof overlaps in any of the two low concentration impurity regions of the two low concentration impurity regions. A thin film transistor manufacturing method is characterized.

In the method of manufacturing a thin film transistor according to the third aspect of the present invention,
The channel region comprises a region of a first conductivity type,
It is preferable that the two low-concentration impurity regions have a structure composed of a low-concentration impurity-doped region of the second conductivity type. For example, the channel region includes a first conductivity type region in which carriers are electrons, and the two low-concentration impurity regions include a second conductivity type low-concentration impurity doped region in which carriers are holes. It is preferable to select the structure.

  It is desirable to use an insulating transparent substrate as the transparent substrate. Further, it is desirable to use a base layer made of a light transmissive insulating material as the base layer. Of course, the patterned light-shielding film is preferably made of a light-impermeable conductive material. Further, it is desirable that the patterned crystalline silicon film has two high-concentration impurity doped regions used as a drain region and a source region.

Furthermore, the transparent substrate is an insulating transparent substrate;
The underlayer is a layer made of a light-transmissive insulating material;
The patterned light-shielding film is preferably in a form in which the entire film surface is surrounded by the transparent substrate and the base layer and is electrically isolated.

In addition, the patterned light shielding film is
Having a third region not located directly under the patterned crystalline silicon film;
The drain-side region of the light-shielding film and the source-side region of the light-shielding film, which are divided across the channel region, are electrically interconnected via the third region of the light-shielding film. It is preferable to do.

For example, one aspect of the method for producing a thin film transistor according to the third aspect of the present invention is
A method of manufacturing a thin film transistor exemplified as an embodiment of the thin film transistor according to the first aspect of the present invention on an insulating transparent substrate,
The method of manufacturing the thin film transistor includes
Forming a film made of the light impermeable conductive material on the upper surface of the insulating transparent substrate (1);
Patterning a film made of the light-impermeable conductive material to form the patterned light-shielding film on the upper surface of the insulating transparent substrate (2);
(3) forming a base layer by forming a film made of a light-transmitting insulating material so as to cover the patterned light-shielding film and the upper surface of the insulating transparent substrate;
Forming an amorphous silicon film on the upper surface of the underlayer (4);
A step (5) of forming a first conductive type crystalline silicon film by heat-treating the amorphous silicon film formed on the upper surface of the underlayer by irradiation with an excimer laser or the like;
Patterning the first conductive type crystalline silicon film to form the patterned first conductive type crystalline silicon film on the upper surface of the underlayer (6);
Forming the gate insulating film so as to cover the patterned crystalline silicon film and the upper surface of the underlayer (7);
Forming a gate electrode film on the upper surface of the gate insulating film (8);
Patterning the gate electrode film to form the patterned gate electrode film on the upper surface of the gate insulating film (9);
A second conductivity type high-concentration impurity doped region for a drain region, which is formed by implanting an impurity imparting second conductivity at a high concentration into the patterned crystalline silicon film of the first conductivity type. And a step (10) of producing a second conductivity type heavily doped region for the source region;
A low-concentration impurity of the second conductivity type formed by implanting an impurity imparting the second conductivity into the patterned crystalline silicon film of the first conductivity type at a low concentration on both sides of the gate electrode. Producing a doped region (11);
The second conductivity type heavily doped impurity doped region and the second conductivity type lightly doped impurity doped region are each subjected to an activation heat treatment for the impurity imparting the second conductivity that has been implanted. The drain region and the source region are formed from the high concentration impurity doped region of the second conductivity type, and the LDD regions are respectively formed on both sides of the gate electrode from the low concentration impurity doped region of the second conductivity type. Performing step (12);
An opening for forming an electrode is provided in the gate insulating film covering the upper surfaces of the drain region and the source region, and an electrode film is formed in the opening so as to be electrically connected to the upper surface of the drain region and the source region, respectively. And (13) producing the drain electrode and the source electrode;
Comprising at least the steps (1) to (13);
The length of the patterned gate electrode film formed in step (9) is selected equal to the gate length of the gate electrode;
A region immediately below the gate electrode having a gate length in the patterned crystalline silicon film of the first conductivity type in contact with the gate insulating film is a channel region having a length equal to the gate length;
The lengths of the second conductivity type heavily doped regions doped in the step (10) are selected to be equal to the drain region length L _D and the source region length L _S , respectively;
The lengths of the second conductivity type lightly doped regions doped between the gate electrode and the drain region and between the gate electrode and the source region in the step (11) are respectively on the drain side. Selected to be equal to the length d of the LDD region and the length d of the source side LDD region;
The pattern shape of the patterned light shielding film formed in step (2) is as follows:
It is divided into a drain side region and a source side region across the channel region,
Arranged so as not to overlap the channel region,
At least, the formation region of the patterned light shielding film overlaps with a part of the region immediately below the drain region and a part of the region immediately below the source region, respectively.
For each of the LDD regions provided on both sides of the channel region, a part of the region immediately below the LDD region overlaps with the formation region of the patterned light shielding film,
A pattern shape is selected, which has a gap of an interval x greater than or equal to the length of the channel region,
The patterned gate electrode film formed in the step (9) is
For the pattern shape of the patterned light shielding film formed in the step (2),
Select the arrangement position of the patterned gate electrode film on the upper part of the gap x that is longer than the length of the channel region,
The arrangement position of the patterned gate electrode film is as follows:
A distance of length d is provided between a side end of the patterned gate electrode film on the drain region side and a side end of the drain region on the gate electrode film side,
A distance d is provided between a side end of the patterned gate electrode film on the source region side and a side end of the source region on the gate electrode film side.
In the method of manufacturing a thin film transistor, the arrangement position of the patterned gate electrode film is positioned.

A fourth aspect of the present invention is an invention of a method for manufacturing a thin film transistor according to the second aspect of the present invention. That is, the manufacturing method of the thin film transistor according to the fourth aspect of the present invention is:
A method of manufacturing a thin film transistor according to the second aspect of the present invention having the above-described configuration on a transparent substrate,
The method of manufacturing the thin film transistor includes
On the transparent substrate,
A patterned light-shielding film;
An underlayer,
A patterned crystalline silicon film;
A gate insulating film;
Forming a structure in which patterned gate electrode films are sequentially stacked;
The patterned crystalline silicon film is
A drain region and a source region composed of a high concentration impurity doped region,
A channel region of length L that overlaps the patterned gate electrode film;
On both sides of the gate electrode film, a drain-side LDD region having a length d and a source-side LDD region having a length d made of a low-concentration impurity doped region are provided in contact with the channel region;
The patterned light-shielding film is
It is divided into a drain side region and a source side region across the channel region,
Arranged so as not to overlap the channel region,
A gap having an interval x equal to or longer than the length L of the channel region is provided between the drain side region and the source side region of the divided light shielding film,
The region on the drain side of the divided light shielding film is disposed so as to overlap at least a part of the drain side LDD region having a length d and a part of the drain region,
In the method of manufacturing a thin film transistor, the source-side region of the divided light-shielding film is disposed so as to overlap at least a part of the source-side LDD region having a length d and a part of the source region. .

In the method of manufacturing a thin film transistor according to the fourth aspect of the present invention,
The channel region comprises a region of a first conductivity type,
It is preferable that the drain side LDD region and the source side LDD region both have a structure composed of a second conductivity type low concentration impurity doped region. For example, the channel region includes a first conductivity type region in which carriers are electrons, and the two low-concentration impurity regions include a second conductivity type low-concentration impurity doped region in which carriers are holes. It is preferable to select the structure.

  It is desirable to use an insulating transparent substrate as the transparent substrate. Further, it is desirable to use a base layer made of a light transmissive insulating material as the base layer. Of course, the patterned light-shielding film is preferably made of a light-impermeable conductive material.

Furthermore, the transparent substrate is an insulating transparent substrate;
The underlayer is a layer made of a light-transmissive insulating material;
The patterned light-shielding film is preferably in a form in which the entire film surface is surrounded by the transparent substrate and the base layer and is electrically isolated.

In addition, the patterned light shielding film is
Having a third region not located directly under the patterned crystalline silicon film;
The drain-side region of the light-shielding film and the source-side region of the light-shielding film, which are divided across the channel region, are electrically interconnected via the third region of the light-shielding film. It is preferable to do.

For example, one aspect of a method for manufacturing a thin film transistor according to the fourth aspect of the present invention is as follows.
A method of manufacturing a thin film transistor exemplified as an embodiment of the thin film transistor according to the second aspect of the present invention described above on an insulating transparent substrate,
The method of manufacturing the thin film transistor includes
Forming a film made of the light impermeable conductive material on the upper surface of the insulating transparent substrate (1);
Patterning a film made of the light-impermeable conductive material to form the patterned light-shielding film on the upper surface of the insulating transparent substrate (2);
(3) forming a base layer by forming a film made of a light-transmitting insulating material so as to cover the patterned light-shielding film and the upper surface of the insulating transparent substrate;
Forming an amorphous silicon film on the upper surface of the underlayer (4);
A step (5) of forming a first conductive type crystalline silicon film by heat-treating the amorphous silicon film formed on the upper surface of the underlayer by irradiation with an excimer laser or the like;
Patterning the first conductive type crystalline silicon film to form the patterned first conductive type crystalline silicon film on the upper surface of the underlayer (6);
Forming the gate insulating film so as to cover the patterned crystalline silicon film and the upper surface of the underlayer (7);
Forming a gate electrode film on the upper surface of the gate insulating film (8);
Patterning the gate electrode film to form the patterned gate electrode film on the upper surface of the gate insulating film (9);
High conductivity impurity doping of the second conductivity type, which is formed by implanting a high concentration of impurities imparting second conductivity into the patterned first crystalline silicon film on both sides of the gate electrode. Producing a region (10);
A second conductivity is imparted to the patterned crystalline silicon film of the first conductivity type on both sides of the gate electrode, between the gate electrode and the high impurity concentration doped region of the second conductivity type. A step (11) of producing a low-concentration impurity-doped region of the second conductivity type, in which an impurity to be implanted is implanted at a low concentration;
The second conductivity type heavily doped impurity doped region and the second conductivity type lightly doped impurity doped region are each subjected to an activation heat treatment for the impurity imparting the second conductivity that has been implanted. Forming the drain region and the source region from the high conductivity impurity doped region of the second conductivity type, and forming the drain side LDD region and the source side LDD region from the low conductivity impurity doped region of the second conductivity type ( 12);
An opening for forming an electrode is provided in the gate insulating film covering the upper surfaces of the drain region and the source region, and an electrode film is formed in the opening so as to be electrically connected to the upper surface of the drain region and the source region, respectively. And (13) producing the drain electrode and the source electrode;
Comprising at least the steps (1) to (13);
The length of the patterned gate electrode film formed in step (9) is selected equal to the gate length L _gate of the gate electrode;
The region immediately below the gate electrode having the gate length L _gate of the patterned crystalline silicon film of the first conductivity type in contact with the gate insulating film is a channel region having a length L equal to the gate length L _gate ;
The lengths of the high-concentration impurity doped regions of the second conductivity type prepared on both sides of the gate electrode in the step (10) are the length L _D of the drain region and the length L _{S of the} source region, respectively. Selected equally;
The lengths of the low-concentration impurity doped regions of the second conductivity type prepared on both sides of the gate electrode in step (11) are equal to the length of the drain side LDD region and the length d of the source side LDD region, respectively. Selected;
The patterned light shielding film formed in step (2) is:
It is divided into a drain side region and a source side region across the channel region,
A gap having an interval x equal to or longer than the length L of the channel region is provided between the drain side region and the source side region of the divided light shielding film;
When positioning the arrangement position of the patterned gate electrode film on the upper part of the gap of the interval x not less than the length L of the channel region,
The region on the drain side of the divided light shielding film overlaps at least a part of the drain side LDD region having a length d and a part of the drain region,
The region on the source side of the divided light shielding film overlaps at least a part of the source-side LDD region having a length d and a part of the source region,
In the method of manufacturing a thin film transistor, the arrangement position of the patterned gate electrode film is positioned.

At this time, the length L of the channel region, the length d of the drain side LDD region, and the length d of the source side LDD region are
The gap x provided between the drain side region of the light shielding film and the source side region of the light shielding film, which is divided across the channel region, is selected so as to satisfy the following formula (1). ing:
L + 2d ≧ x ≧ L Formula (1)
It is preferable.

The region on the drain side of the light shielding film and the region on the source side of the light shielding film, which are divided across the channel region,
The end on the gate electrode side of the drain side region of the light shielding film and the end on the gate electrode side of the source side region of the light shielding film are:
To be symmetric with respect to the gate electrode,
It is desirable to position the arrangement position of the patterned gate electrode film.

Furthermore, the thin film transistor according to the first aspect of the present invention produced by the method for producing a thin film transistor according to the third aspect of the present invention, and the thin film transistor according to the fourth aspect of the present invention, The thin film transistor according to the second aspect of the present invention,
The patterned light-shielding film is
A third region not located immediately below the patterned crystalline silicon film of the first conductivity type;
The region on the drain side of the light shielding film and the region on the source side of the light shielding film, which are divided across the channel region, are electrically connected to each other via the third region of the light shielding film. preferable.

Also,
The high-concentration impurity doped region of the second conductivity type reaches the upper surface of the underlayer,
It is preferable to adopt a structure in which the second conductivity type low-concentration impurity doped region also reaches the upper surface of the underlayer.

Moreover,
For the top gate type field effect transistor,
The manufacturing process may further include a step of forming an interlayer insulating film formed so as to cover the upper surfaces of the gate electrode and the gate insulating film.

The thin film transistor according to the first aspect of the present invention produced by the method for producing a thin film transistor according to the third aspect of the present invention, and the book produced by the method for producing a thin film transistor according to the fourth aspect of the present invention. The thin film transistor according to the second aspect of the invention is
The first conductivity type is a conductivity type using holes as carriers,
The second conductivity type is a conductivity type using electrons as carriers,
The top gate type field effect transistor that is configured can be selected to be an N-channel type field effect transistor.

Or
The first conductivity type is a conductivity type using electrons as carriers,
The second conductivity type is a conductivity type using holes as carriers,
The structure of the P-channel type field effect transistor may be selected as the top gate type field effect transistor that is configured.

The fifth aspect of the present invention corresponds to the invention of the thin film transistor according to the first aspect of the present invention or the method of using the thin film transistor according to the second aspect of the present invention. The present invention is an invention of a display device driven using the thin film transistor according to the first aspect of the invention or the thin film transistor according to the second aspect of the present invention. That is, the display device according to the fifth aspect of the present invention is:
A display device driven using a top gate type crystalline silicon thin film transistor formed on a transparent substrate,
In the display device, a top gate type crystalline silicon thin film transistor formed on a transparent substrate, which is used as a driving device,
A display device comprising the thin film transistor according to the first aspect of the present invention or the thin film transistor according to the second aspect of the present invention.

For example, a preferred aspect of the display device according to the fifth aspect of the present invention is:
A display device driven using a top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate,
In the display device, a top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate, which is used as a driving device,
A display device comprising the thin film transistor according to the first aspect of the present invention or the thin film transistor according to the second aspect of the present invention.

One aspect of the display device according to the fifth aspect of the present invention is a liquid crystal display driven using the thin film transistor according to the first aspect of the present invention or the thin film transistor according to the second aspect of the present invention. It is an invention of the device. That is, one aspect of the display device according to the fifth aspect of the present invention is:
A liquid crystal display device driven using a top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate,
The liquid crystal display device
Adopts a method in which backlight for liquid crystal display is incident from the insulating transparent substrate side;
As a top gate type crystalline silicon thin film transistor thin film transistor formed on an insulating transparent substrate that receives light irradiation by the backlight light,
The thin film transistor exemplified as one embodiment of the thin film transistor according to the first aspect of the present invention described above or the thin film transistor exemplified as one embodiment of the thin film transistor according to the second aspect of the present invention described above is used. The liquid crystal display device.

The sixth aspect of the present invention corresponds to the invention of the thin film transistor according to the first aspect of the present invention or the method of using the thin film transistor according to the first aspect of the present invention. It is invention of the electronic device comprised by incorporating the display apparatus concerning the 5th form of this invention. That is, the electronic device according to the sixth aspect of the present invention is:
An electronic device comprising a display device,
The display device employed in the electronic device is
An electronic apparatus that is a display device according to the fifth aspect of the present invention.

One aspect of the electronic device according to the sixth aspect of the present invention is an invention of an electronic device configured by incorporating a display device according to the fifth aspect of the present invention, particularly a liquid crystal display device. Specifically, one aspect of the electronic device according to the sixth aspect of the present invention is:
An electronic device adopting a liquid crystal display device as a display mechanism,
The liquid crystal display device employed in the electronic apparatus is
Adopts a method in which backlight for liquid crystal display is incident from the insulating transparent substrate side;
The liquid crystal display device is the above-described liquid crystal display device which is an embodiment of the display device according to the fifth aspect of the present invention.

  In the present invention, a polycrystalline silicon film can be adopted as the crystalline silicon film.

  In the thin film transistor according to the present invention, when the light irradiated from the insulating transparent substrate side enters the crystalline silicon film of the operating layer of the TFT, the channel region is not covered, but the drain region and the source region are covered. By providing two regions of the divided light shielding layer on the upper surface of the insulating transparent substrate, light transmitted through the insulating transparent substrate and the base layer is incident on the LDD region on the drain side and the LDD region on the source side. It has an excellent function of suppressing the light leakage current. Further, since the divided light shielding layer does not cover the channel region, the influence of the potential of the light shielding layer does not reach the channel region, so that the variation of the threshold voltage of the TFT due to the influence of the potential of the light shielding layer is prevented. In addition, it is not necessary to provide an electrode for applying a constant potential to the light shielding layer (conductor layer), and the factor of increasing the manufacturing cost is eliminated. By utilizing the excellent characteristics of the thin film transistor according to the present invention, in a liquid crystal display device driven using the thin film transistor, a video signal cannot be sufficiently written to a pixel, and a writing operation that causes display failure The occurrence of defects is prevented.

It is a top view which shows typically the structure of 1st Embodiment of the thin-film transistor concerning this invention. In the thin film transistor according to the present invention, it is a diagram illustrating a change amount (ΔV _th ) of the threshold over time when continuously operating with respect to the threshold in the initial state, and ○ (no electrical connection) indicates divided light shielding. When there is no electrical connection between the two regions of the film, ◆ (with electrical connection) indicates the result when the two regions of the divided light shielding film are electrically connected. It is sectional drawing which shows typically the structure of the cross section shown by A-A 'in the structure of 1st Embodiment of the thin-film transistor concerning this invention shown in FIG. Structural features of the first embodiment of the thin film transistor according to the present invention; distance x between two regions of the divided light shielding film, channel length L of the channel region, and length of the low-concentration impurity region provided on both sides of the channel region D is a cross-sectional view showing the crystalline silicon film in more detail. The relationship between the distance x between the light shielding films divided across the channel region of the thin film transistor and the “normalized light leakage current”, and the threshold value of the thin film transistor provided with the light shielding film divided across the channel region FIG. 5 is a diagram showing a relationship between a difference (ΔV _th ) and a threshold value (V _th ) of a conventional TFT (TFT-B). It is sectional drawing which shows typically the structure of the conventional thin-film transistor (TFT-C) which employ | adopts LDD structure and has provided the light shielding film which provides the electrode for electric potential application. It is process drawing which shows the manufacturing method of the thin-film transistor which shows the 2nd Embodiment of this invention, and has shown the part of process (a)-process (d). It is process drawing which shows the manufacturing method of the thin-film transistor which shows the 2nd Embodiment of this invention, and has shown the part of process (e)-process (g). It is process drawing which shows the manufacturing method of the thin-film transistor which shows the 2nd Embodiment of this invention, and has shown the part of process (h)-process (j). It is process drawing which shows the manufacturing method of the thin-film transistor which shows the 2nd Embodiment of this invention, and has shown the part of process (k) and process (l). It is process drawing which shows the manufacturing method of the conventional thin-film transistor (TFT-C) compared with this invention, and has shown the part of process (a)-process (d). The It is process drawing which shows the manufacturing method of the conventional thin-film transistor (TFT-C) compared with this invention, and has shown the part of process (e)-process (h). The It is process drawing which shows the manufacturing method of the conventional thin-film transistor (TFT-C) compared with this invention, and has shown the part of process (i)-process (k). The It is process drawing which shows the manufacturing method of the conventional thin-film transistor (TFT-C) compared with this invention, and has shown the part of process (l)-process (n). It is a top view which shows 3rd Embodiment of the thin-film transistor of this invention which employ | adopts a double gate structure. It is a disassembled perspective view of the liquid crystal display device concerning the 4th Embodiment of this invention. It is a perspective view of the electronic device concerning the 5th Embodiment of this invention.

  Hereinafter, a thin film transistor according to the present invention, a manufacturing process thereof, a display device using the thin film transistor according to the present invention as a driving device, and an electronic device to which the display device is applied will be described in more detail.

  The technical features of the present invention are summarized below.

The first feature of the present invention is:
In a TFT in which a light shielding film, a base film, a silicon film, a gate insulating film, and a gate electrode film, which are arranged on a transparent substrate so as not to overlap at least the channel region, are formed, the light shielding film present under the silicon film is the channel region. The distance between the divided light shielding films is not less than the channel length and not more than twice the sum of the channel length and the LDD length.

The second feature of the present invention is that
In the divided light-shielding film, an end on the opposite side to the side facing the channel region is present in the high-concentration impurity region.

The third feature of the present invention is that
The light-shielding film divided across the channel region is electrically connected to other than the channel region.

  In addition, a display device of the present invention includes the above-described thin film transistor.

  Furthermore, an electronic apparatus according to the present invention includes the display device described above.

In the TFT having the above first feature of the present invention,
On the transparent substrate, a patterned light-shielding film, an underlayer, a patterned silicon film, a gate insulating film, and a patterned gate electrode film are sequentially stacked, and the patterned silicon film is In a thin film transistor having a channel region overlapping the patterned gate electrode film and two low-concentration impurity regions in contact with the channel region,
The patterned light-shielding film is a pattern that is disposed so as not to overlap the channel region, and is disposed so that at least a part thereof overlaps in any one of the two low-concentration impurity regions. It has the structure of

In that case, the first feature and the second feature of the present invention are specifically:
During the operation of the thin film transistor, the patterned light shielding film that overlaps the two low concentration impurity regions in a direction in which carriers flow from one of the two low concentration impurity regions to the channel region and further flow to the other of the low concentration impurity regions. X is the distance between the ends of the two low-concentration impurity regions, the total length of the two low-concentration impurity regions is 2d, and the length of the channel region is L.
L + 2d ≧ x ≧ L
It corresponds to the condition of satisfying.

The third feature of the present invention is that
The patterned light shielding film can be achieved by adopting a form in which it is one continuous pattern.

In order for the first to third features of the present invention to exert their effects,
The patterned light shielding film employs a structure in which the entire surface of the film is surrounded by a transparent substrate having insulating properties and a film having insulating properties and is electrically isolated.

  In order to exhibit the first feature of the present invention, it is necessary that the manufacturing process of the TFT conforms to the following manufacturing method.

A method of manufacturing a thin film transistor having a channel region and a low concentration impurity region between the channel region and the high concentration impurity region,
A light-shielding film is formed on the transparent substrate so as not to overlap the channel region, and the two low-concentration impurity regions overlap at least partially in any low-concentration impurity region,
Furthermore, a method for manufacturing a thin film transistor, comprising: sequentially laminating a base layer, a patterned silicon film, a gate insulating film, and a patterned gate electrode film on a patterned light shielding film.

In that case, the first feature and the second feature of the present invention are specifically:
During operation of the thin film transistor, carriers flow from one of the two low-concentration impurity regions to the channel region and further to the other of the low-concentration impurity regions.
When the distance between the edges of the patterned light-shielding film overlapping the two low-concentration impurity regions is x, the total length of the two low-concentration impurity regions is 2d, and the length of the channel region is L ,
L + 2d ≧ x ≧ L
This corresponds to the condition of employing a thin film transistor manufacturing method characterized by forming a light shielding film so as to satisfy the above.

The third feature of the present invention is that
This can be achieved by forming the patterned light shielding film into one continuous pattern.

In order for the first to third features of the present invention to exert their effects,
It is necessary to form the patterned light-shielding film that is surrounded by the insulating substrate and the insulating film and electrically isolated from the entire surface.

  The effects of the present invention and the action (principle) that exerts the effects obtained when the first to third characteristics of the present invention are adopted can be summarized as follows.

  When light is irradiated into silicon, a pair of electrons and holes is generated by light absorption. When an electric field is present, the generated electrons and holes are transported in the opposite direction, resulting in a light leakage current. . The region where the light leakage current is generated at the time of light irradiation is a region where an electric field for transporting electrons and holes generated by light absorption in the reverse direction exists. When a bias is applied between the source region and the drain region, in the “off-state” TFT, an electric field due to a potential difference between the source region and the drain region exists in the channel region and the LDD regions provided on both sides thereof. is there. In particular, the drain side LDD region and the channel side drain side portion. In the present invention, when a bias is applied between the source region and the drain region, in the TFT in the “off state”, the channel region and the LDD regions provided on both sides of the channel region where the electric field exists are excluded, except for the channel region. Light leakage current is suppressed by shielding the LDD region using a patterned light shielding film.

  The reason for this is currently unknown, but we think as follows. In an “off state” in which no channel is formed, an electric field due to a bias applied between the source region and the drain region exists mainly in the LDD region. Therefore, since an electric field exists in the LDD region, carriers generated by photoexcitation can be efficiently extracted to the outside. On the other hand, in a region where no electric field exists in the channel portion, carriers generated by photoexcitation are recombined on the spot and cannot be extracted outside. Therefore, considering that the bias state between the junction of the channel region and the drain region including the LDD region and the bias state between the junction of the source region including the channel region and the LDD region may be switched when the liquid crystal display device is driven, Light leakage current can be effectively suppressed by shielding the LDD region with a light shielding film patterned like the TFT of the present invention.

  Actually, when a bias is applied between the source region and the drain region, in the “off-state” TFT, a region where an electric field due to the pn junction exists is a depletion layer of a pn junction composed of an LDD region and a channel region. When the carrier concentration of the LDD region is lower than the carrier concentration of the region, particularly the channel region, the LDD region is depleted. Furthermore, an electric field also exists in a depletion region formed at the interface between the drain side LDD region and the base layer. In the TFT in the “off state”, light leakage current can be suppressed by shielding the region where the electric field exists (depletion layer region and depletion region) in the LDD region on the drain side.

  When the source region, the drain region, and the light shielding film are overlapped and the potential of the light shielding film is not fixed, when a voltage is applied to each of the source and drain electrodes, the potential of the light shielding film also changes accordingly. However, in the TFT structure of the present invention, since the light shielding film does not exist in the channel region, the channel region is not affected, and the resistance value of the LDD region varies only slightly. For this reason, when applied to a liquid crystal display device, it is not necessary to change the driving voltage condition used for normal display (displayed by a liquid crystal display device to which a TFT without a light shielding film is applied), but the gate voltage to be applied. By slightly increasing the value, excellent display characteristics can be obtained more reliably.

  In addition, when the TFT characteristics vary greatly, it is necessary to greatly increase the gate voltage in accordance with the TFT having the lowest on-current value so that display failure does not occur, and there is a concern that the power consumption will increase significantly. Arise. However, by electrically connecting the light shielding films that are divided symmetrically across the channel region as in the TFT of the present invention in regions other than the channel region, the potential of the light shielding film can be set to the applied voltage value (voltage It is influenced by both low and high electrodes, and can be kept at a high potential to some extent. Therefore, it is induced by the potential of the light-shielding film rather than when the light-shielding film is isolated on the left and right of the gate electrode. Since the resistance value of the LDD region to be increased can be suppressed, the problem of a decrease in on-current of the TFT does not occur. For this reason, even when the variation in TFT characteristics is large, an increase in power consumption is suppressed, and excellent display characteristics can be obtained.

  In order to suppress the influence on the channel region due to the potential of the light shielding film, an electrode for fixing the potential of the light shielding film may be formed. However, as described above, the number of complicated processes increases and the cost increases. In the TFT manufacturing process of the present invention, since the light shielding film does not exist directly under the channel region, that is, below the gate electrode to which the gate electric field is applied, it is not necessary to fix the potential of the light shielding film, and the light shielding film that leads to cost increase A step of forming an electrode is not necessary.

Further, in shielding the light shielding of the LDD region of the TFT, and the boundary between the LDD region and the source and drain regions, the end of the light shielding film opposite to the opposite side across the channel region as in the TFT of the present invention Is processed in a high-concentration impurity region, that is, the source region and the drain region, so that the length of the light-shielding film can be obtained even when the LDD length is short to some extent in order to ensure sufficient on-current as described above. Can be made sufficiently long, so that a sufficient process margin can be realized. Note that in the case of a TFT having a plurality of gate electrodes, such as a double gate structure or a triple gate structure, a region immediately below each gate electrode is a channel region. When the channel region is divided as a result of providing a plurality of gate electrodes, the source-drain bias V _SD is applied between the outermost source region and the drain region. Accordingly, the end of the light shielding film opposite to the side facing the channel region is processed so as to be positioned in the outermost source region and drain region.

  Hereinafter, the first to sixth embodiments of the present invention will be described with reference to specific examples. In the following first to fifth embodiments, specific examples described as exemplifications are examples of the best embodiments of the present invention, but the technical scope of the present invention is the implementation examples illustrated in these examples. The form is not limited.

(First embodiment)
As the first embodiment of the present invention, an example of the structure of the thin film transistor according to the first embodiment or the second embodiment of the present invention, and the thin film transistor according to the first embodiment or the second embodiment of the present invention, liquid crystal A form used for an active matrix driving device of a display device will be described in detail with reference to the drawings.

  FIG. 1 is a top view schematically showing a mode in which the thin film transistor according to the first mode or the second mode of the present invention is used for an active matrix driving device of a liquid crystal display device. In the P-channel TFT shown in FIG. 1, the light shielding film 2 is divided into two regions in parallel with the channel width direction with the channel region interposed therebetween. The two regions of the light shielding film 2 are electrically connected by a third region provided in a region where the silicon film 4 is not formed. That is, the light shielding film 2 is formed in a “U-shaped” pattern including two divided regions and a third region.

In the P-channel TFT shown in FIG. 1, a region immediately below the gate electrode branched from the gate line 5 in the silicon film 4 is a channel region. The pattern shape of the light shielding film 2 is arranged so as not to overlap with the channel region. Low-concentration impurity doped regions (LDD regions) are formed on both sides of the gate electrode of the silicon film 4 so as to be in contact with the channel region. The two divided regions of the light shielding film 2 are arranged so as to overlap at least a part of any of the two LDD regions. At that time, the width W _shield of the two divided regions of the light shielding film 2 is preferably wider than the width W _LDD of the LDD region (the width of the LDD region in the channel width direction). By selecting the width W _shield of the two divided regions of the light shielding film 2 as described above, the boundary portion between the LDD region and the source / drain regions is surely shielded and generated from the light irradiated to the LDD region. The light leakage current of the TFT can be suppressed.

Further, the lengths L _shield-D and L _shield-S of the two divided regions of the light shielding film 2 are set to be not less than the length d of the LDD region (the length of the LDD region in the channel length direction), respectively. preferable. That is, the two divided regions of the light shielding film 2 are preferably arranged so as to overlap at least a part of any two of the LDD regions and a part of the source region and the drain region.

  At that time, the two divided regions of the light-shielding film 2 are arranged so as to overlap with a part of the source region 8 and the drain region 9 formed by the high concentration impurity doped region, respectively.

  A drain region 9 is disposed above the region on the drain side of the light shielding film 2 with a base layer 3 interposed therebetween. Further, a source region 8 is disposed on the source side region of the light shielding film 2 via the base layer 3.

The portion where the drain region 9, the base layer 3, and the drain side region of the light shielding film 2 are stacked constitutes a MIS structure (capacitor C _D ) composed of the drain region 9 / the base layer 3 / the drain side region of the light shielding film 2. doing. The portion where the source region 8, the base layer 3, and the source side region of the light shielding film 2 are stacked constitutes a MIS structure (capacitor C _S ) composed of the source region 8 / the base layer 3 / the light source film 2. doing. That is, when the drain side region of the light shielding film and the source side region of the light shielding film are electrically connected, the MIS junction (capacitor C _D ) composed of the drain region / underlying layer / drain side region of the light shielding film, and the source region This corresponds to a state in which the MIS junction (capacitor C _S ) composed of / source layer / underlayer / light shielding film is connected in series.

In that situation, when the potential (V _D (t)) of the drain region of the P-channel TFT and the potential (V _S (t)) of the source region are V _S (t)> V _D (t), The potential (V _BD (t)) of the drain side region of the light shielding film 2 and the potential (V _BS (t)) of the source side region of the light shielding film 2 are V _S (t)> V _BS (t) ≈V _BD ( t)> V _D (t) is satisfied.

That is, when the drain side region of the light shielding film and the source side region of the light shielding film are electrically connected, the potential (V _BD (t)) of the drain side region of the light shielding film 2 and the source side region of the light shielding film 2 are The potentials (V _BS (t)) are equal and become an intermediate value between the drain region potential (V _D (t)) and the source region potential (V _S (t)).

At this time, when the P-channel TFT reaches the steady state of “off state”, that is, the state where the charging of the capacitor C _D and the capacitor C _S is completed, the potential (V _BD ( t)) and the potential (V _BS (t)) of the source side region of the light-shielding film 2 satisfy the condition of V _S (t)> V _BS (t) = V _BD (t)> V _D (t). .

In a region sandwiched between the drain side region of the light shielding film 2 and the source side region of the light shielding film 2, the potential V _{under-channel} (z, t) on the lower surface side of the base layer 3 is the potential of the drain side region of the light shielding film 2 ( In general, V _BS (t) ≧ V _{under-channel} (z, t) ≧ V _BD (t) with respect to V _BD (t)) and the potential (V _BS (t)) of the source side region of the light shielding film 2. It becomes. In particular, when the condition of V _S (t)> V _BS (t) = V _BD (t)> V _D (t) is satisfied, V _BS (t) = V _{under-channel} (z, t) = V _BD (T).

In the case of V _S (t)> V _BS (t) = V _BD (t)> V _D (t), in the MIS junction (capacitor C _D ) composed of the drain region / underlayer / light shielding film drain side region. A reverse bias (ΔV _reverse ) is applied to the M / I / p ⁺ type junction. Therefore, in this M / I / p + type junction, a depleted region is formed in the drain region (p ⁺ region) in contact with the base layer. The MIS junction (capacitor C _D ) composed of the drain region / underlayer / light shielding film drain side region has a junction capacitance resulting from the formation of the depleted region. On the other hand, a forward bias (ΔV _forward ) is applied to the M / I / p ⁺ type junction in the MIS junction (capacitor C _S ) composed of the source region / underlayer / light shielding film source side region. Therefore, in this M / I / p ⁺ type junction, a carrier (hole) accumulation region is formed in the drain region (p ⁺ region) in contact with the base layer. The MIS junction (capacitor C _S ) composed of the source region / underlayer / source region of the light-shielding film has a junction capacitance resulting from the formation of the carrier (hole) accumulation region. In general, in the case of | ΔV _forward | = | ΔV _reverse |, even when the junction area is the same, the junction capacitance C _MIP-reverse (when applying a _reverse bias (ΔV _reverse ) to the M / I / p ⁺ type junction is used. ΔV _reverse ) and the junction capacitance C _MIP-forward (ΔV _forward ) when applying a _forward bias (ΔV _forward ) to the M / I / p ⁺ type junction are not equal (C _MIP-reverse (ΔV _reverse ) ≠ C _MIP-forward (ΔV _forward )).

For example, two parallel plate capacitors (capacitor C ₁ and capacitor C ₂ ) are connected in series, and a potential V ₁ (t) and a potential V ₂ (t) are applied to both ends thereof (provided that V ₂ ( t) ≧ V ₁ (t)), when the two capacitors are charged, the potential difference (V ₂ (t) −V ₁ (t)) is distributed between the two capacitors (capacitor C ₁ and capacitor C ₂ ). Think about the situation.

In the process of charging the two capacitors, a current i (t) flows through the two capacitors connected in series. This current i (t) is an increase rate dQ ₁ (t) / dt of the charge amount Q ₁ (t) accumulated in the capacitor C ₁ and an increase in the charge amount Q ₂ (t) accumulated in the capacitor C _2. This corresponds to the rate dQ ₂ (t) / dt.

i (t) = dQ ₁ (t) / dt
i (t) = dQ ₂ (t) / dt
The total i (t) dt of the current i (t) that flows from the start of charging to the completion of charging can be expressed as follows.

∫i (t) dt = ∫ (dQ ₁ (t) / dt) dt
∫ i (t) dt = ∫ (dQ ₂ (t) / dt) dt
Assuming that the potential difference applied to the capacitors C ₁ and C ₂ at the time of completion of charging is ΔV ₁ and ΔV ₂ , the total (ΔV ₁ + ΔV ₂ ) is, of course, (V ₁ (t) − V ₂ (t)).

(ΔV ₁ + ΔV ₂ ) = (V ₂ (t) −V ₁ (t))
Further, when the charging is completed, the charge amount Q _D and the charge amount Q _S stored in the capacitor C _D and the capacitor C _S , respectively, can be expressed as follows.

Q ₁ = ∫ (dQ ₁ (t) / dt) dt = C ₁ · ΔV ₁
Q ₂ = ∫ (dQ ₂ (t) / dt) dt = C ₂ · ΔV ₂
that time,
Since ∫ (dQ ₁ (t) / dt) dt = ∫i (t) dt = ∫ (dQ ₂ (t) / dt) dt,
C ₁ · ΔV ₁ = Q ₁ = Q ₂ = C ₂ · ΔV ₂
It has become.

Therefore, ΔV ₁ and ΔV ₂ can be expressed as follows.

ΔV ₁ = (V ₂ (t) −V ₁ (t)) · (1 / C ₁ ) / {(1 / C ₁ ) + (1 / C ₂ )}
ΔV ₂ = (V ₂ (t) −V ₁ (t)) · (1 / C ₂ ) / {(1 / C ₁ ) + (1 / C ₂ )}
That is, at the time when charging is completed, the potential V _B (t) of the connecting portion of the capacitors C ₁ and C ₂ connected in series can be expressed as follows.

ΔV ₁ = (V _B (t) −V ₁ (t))
ΔV ₂ = (V ₂ (t) −V _B (t))
V _B (t) = (C ₁ · V ₁ (t) + C ₂ · V ₂ (t)) / (C ₁ + C ₂ )
On the other hand, in the P-channel TFT, even if the drain side region of the light shielding film and the source side region of the light shielding film are electrically separated, the drain region 9, the base layer 3, and the drain side region of the light shielding film 2 are laminated. The formed portion constitutes the MIS structure (capacitor C _D ) composed of the drain region / underlayer / drain region of the light shielding film. A portion where the source region 8, the underlayer 3, and the source side region of the light shielding film 2 are stacked constitutes a MIS structure (capacitor C _S ) composed of the source region 8 / underlayer / source region of the light shielding film. Yes. Further, since the drain side region of the light shielding film and the source side region of the light shielding film are electrically separated, the potential (V _BD (t)) of the drain side region of the light shielding film and the source side region of the light shielding film are The potential (V _BS (t)) is essentially different. Accordingly, when the potential of the drain region (V _D (t)) and the potential of the source region (V _S (t)) are V _S (t)> V _D (t), the potential of the drain side region of the light shielding film (V _BD (t)) and the potential (V _BS (t)) of the source side region of the light shielding film are generally V _S (t) ≧ V _BS (t)> V _BD (t) ≧ V _D (t) Satisfy the conditions.

That is, when the drain side region of the light shielding film and the source side region of the light shielding film are electrically separated, the potential (V _BD (t)) of the drain side region of the light shielding film 2 is equal to the potential of the drain region (V _D (T)), and the potential (V _BS (t)) of the source side region of the light shielding film 2 is close to the potential (V _S (t)) of the source region.

A potential difference (V _BS (t) −V _BD (t)) exists between the drain side region of the light shielding film and the source side region of the light shielding film, and the drain side region / underlayer / light shielding film of the light shielding film. An MIM structure (capacitor C _DIS ) composed of a source side region is formed. In other words, the MIS junction (capacitor C _D ) composed of the drain region / underlayer / light shielding film drain side region (capacitor C _D ), and the MIM structure (capacitor C _DIS ) composed of the light shielding film drain side region / underlayer / light shielding film source side region. This corresponds to a state in which the MIS junction (capacitor C _S ) composed of the source region / underlayer / source region of the light shielding film is connected in series.

At that time, when the P-channel TFT reaches the steady state of “off state”, that is, the state where the charging of the capacitor C _D , the capacitor C _DIS and the capacitor C _S is completed, V _S (t)> V _BS (t )> V _BD (t)> V _D (t).

In a region sandwiched between the drain side region of the light shielding film 2 and the source side region of the light shielding film 2, the potential V _{under-channel} (z, t) on the lower surface side of the base layer 3 is the potential of the drain side region of the light shielding film 2 ( In general, V _BS (t) ≧ V _{under-channel} (z, t) ≧ V _BD (t) with respect to V _BD (t)) and the potential (V _BS (t)) of the source side region of the light shielding film 2. It becomes. The potential V _{under-channel} (z, t) on the lower surface side of the underlayer 3 is in the range of V _BS (t) ≧ V _{under-channel} (z, t) ≧ V _BD (t), and the drain side region of the light shielding film It changes linearly from the side to the source side region side of the light shielding film. In particular, when the condition of V _S (t)> V _BS (t)> V _BD (t)> V _D (t) is satisfied, V _BS (t)> V _{under-channel} (z, t)> V _BD (T).

In the case of V _S (t)> V _BS (t)> V _BD (t)> V _D (t), in the MIS junction (capacitor C _D ) composed of the drain region / underlying layer / drain region of the light shielding film. A reverse bias (ΔV _reverse ) is applied to the M / I / p ⁺ type junction. Therefore, in this M / I / p ⁺ type junction, a depleted region is formed in the drain region (p ⁺ region) in contact with the base layer. The MIS junction (capacitor C _D ) composed of the drain region / underlayer / light shielding film drain side region has a junction capacitance resulting from the formation of the depleted region. On the other hand, a forward bias (ΔV _forward ) is applied to the M / I / p ⁺ type junction in the MIS junction (capacitor C _S ) composed of the source region / underlayer / light shielding film source side region. Accordingly, in this M / I / p + type junction, a carrier (hole) accumulation region is formed in the drain region (p ⁺ region) in contact with the base layer. The MIS junction (capacitor C _S ) composed of the source region / underlayer / source region of the light-shielding film has a junction capacitance resulting from the formation of the carrier (hole) accumulation region. In general, in the case of | ΔV _forward | = | ΔV _reverse |, even when the junction area is the same, the junction capacitance C _MIP-reverse (when applying a _reverse bias (ΔV _reverse ) to the M / I / p ⁺ type junction is used. ΔV _reverse ) and the junction capacitance C _MIP-forward (ΔV _forward ) when applying a _forward bias (ΔV _forward ) to the M / I / p ⁺ type junction are not equal (C _MIP-reverse (ΔV _reverse ) ≠ C _MIP-forward (ΔV _forward )). On the other hand, in the MIM junction (capacitor C _DIS ) composed of the drain side region of the light shielding film / the underlying layer / the source side region of the light shielding film, the junction capacitance C _MIM of the MIM junction is originally a bias applied to the MIM junction ( The direction of ΔV _MIM ) does not depend on its magnitude.

For example, three parallel plate capacitors (capacitor C ₁ , capacitor C ₃ , capacitor C ₂ ) are connected in series, and potential V ₁ (t) and potential V ₂ (t) are applied to both ends thereof (provided that , V ₂ (t) ≧ V ₁ (t)), and when the three capacitors are charged, the potential difference (V ₂ (t) −V ₁ (t)) becomes three capacitors (capacitor C ₁ , capacitor C ₃ , Consider the situation of being distributed among capacitors C ₂ ).

In the process of charging the three capacitors, a current i (t) flows through the three capacitors connected in series. This current i (t) is an increase rate dQ ₁ (t) / dt of the charge amount Q ₁ (t) accumulated in the capacitor C ₁ and an increase in the charge amount Q ₃ (t) accumulated in the capacitor C _3. This corresponds to the rate dQ ₃ (t) / dt and the rate of increase dQ ₂ (t) / dt of the charge amount Q ₂ (t) accumulated in the capacitor C ₂ .

i (t) = dQ ₁ (t) / dt
i (t) = dQ ₃ (t) / dt
i (t) = dQ ₂ (t) / dt
The total i (t) dt of the current i (t) that flows from the start of charging to the completion of charging can be expressed as follows.

∫i (t) dt = ∫ (dQ ₁ (t) / dt) dt
∫ i (t) dt = ∫ (dQ ₃ (t) / dt) dt
∫ i (t) dt = ∫ (dQ ₂ (t) / dt) dt
Assuming that the potential differences applied to the capacitors C ₁ , C ₃ , and C ₂ are ΔV ₁ , ΔV ₃ , and ΔV ₂ when charging is completed, the total (ΔV ₁ + ΔV ₃ + ΔV ₂ ) is Of course, it is equal to (V ₂ (t) −V ₁ (t)).

(ΔV ₁ + ΔV ₃ + ΔV ₂ ) = (V ₂ (t) −V ₁ (t))
Further, when the charging is completed, the charge amount Q ₁ , the charge amount Q ₃ , and the charge amount Q ₂ stored in the capacitor C ₁ , the capacitor C ₃ , and the capacitor C ₂ can be expressed as follows.

Q ₁ = ∫ (dQ ₁ (t) / dt) dt = C ₁ · ΔV ₁
Q ₃ = ∫ (dQ ₃ (t) / dt) dt = C ₃ · ΔV ₃
Q ₂ = ∫ (dQ ₂ (t) / dt) dt = C ₂ · ΔV ₂
that time,
∫ (dQ ₃ (t) / dt) dt = ∫i (t) dt = ∫ (dQ ₂ (t) / dt) dt
∫ (dQ ₃ (t) / dt) dt = ∫i (t) dt = ∫ (dQ ₁ (t) / dt) dt
So
C ₁ · ΔV ₁ = C ₃ · ΔV ₃ = C ₂ · ΔV ₂
It has become.

Therefore, ΔV ₁ , ΔV ₃ , ΔV ₂ can be expressed as follows.

ΔV ₁ = (V ₂ (t) −V ₁ (t)) · (1 / C ₁ ) / [(1 / C ₁ ) + (1 / C ₃ ) + (1 / C ₃ )]
ΔV ₃ = (V ₂ (t) −V ₁ (t)) · (1 / C ₃ ) / [(1 / C ₁ ) + (1 / C ₃ ) + (1 / C ₂ )]
ΔV ₂ = (V ₂ (t) −V ₁ (t)) · (1 / C ₂ ) / [(1 / C ₁ ) + (1 / C ₃ ) + (1 / C ₂ )]
That is, at the time when charging is completed, the potential V _B-1 (t) of the connection portion of the capacitors C ₁ and C ₃ connected in series and the potential V _B− of the connection portion of the capacitors C ₂ and C ₃ are connected. ₂ (t) can be expressed as follows.

ΔV ₁ = (V _B-1 (t) −V ₁ (t))
ΔV ₃ = (V _B−2 (t) −V _B−1 (t))
ΔV ₂ = (V ₂ (t) −V _B-2 (t))
V _B-1 (t) = V ₁ (t) + (V ₂ (t) -V ₁ (t)) ・ (1 / C ₁ ) / [(1 / C ₁ ) + (1 / C ₃ ) + (1 / C ₂ )]
V _B-2 (t) = V ₂ (t) − (V ₂ (t) -V ₁ (t)) ・ (1 / C ₂ ) / [(1 / C ₁ ) + (1 / C ₃ ) + (1 / C ₂ )]
For example, in a P-channel TFT, in a structure in which the drain side region of the light shielding film and the source side region of the light shielding film are electrically connected, the drain side region of the light shielding film and the source side region of the light shielding film are arranged symmetrically. Then, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film are substantially equal to the potential (V _D (t)) of the drain region. And the average value of the potential (V _S (t)) of the source region. For example, even if the operation of periodically inverting the drain bias (V _D ) and the source bias (V _S ) is continued, when the steady state of the “off state” is reached, the potential of the drain side region of the light shielding film ( V _BD (t)) and the potential (V _BS (t)) of the source side region of the light shielding film are substantially equal to the potential of the drain region (V _D (t)) and the potential of the source region (V _S (t)). ) Is maintained at an average value. In addition, when a periodic on / off operation is performed, the temporal shift between the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film is It is suppressed.

On the other hand, in the P-channel TFT, in the structure in which the drain side region of the light shielding film and the source side region of the light shielding film are electrically separated, the drain side region of the light shielding film and the source side region of the light shielding film are arranged symmetrically. However, when the drain bias (V _D ) and the source bias (V _S ) are periodically inverted, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BD (t)) of the source side region of the light shielding film ( V _BS (t)) varies periodically. In addition, when a periodic on / off operation is performed, there is a temporal shift between the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film. Is caused.

FIG. 2 shows a region on the drain side of the light-shielding film, which is divided across a channel region via a third region that is not located immediately below the patterned crystalline silicon film of the first conductivity type. And the source side region of the light shielding film are electrically interconnected (with electrical connection), and the drain side region of the light shielding film and the source side region of the light shielding film are electrically separated It is a graph which compares the time-dependent change of the threshold gate voltage _Vth of this P channel type TFT about two structures of (no electrical connection). The P-channel TFT is operated continuously under the following driving conditions, and the increase in threshold gate voltage V _th accompanying the increase in continuous operation time, ΔV _th is plotted. FIG. 2 shows the results when a polycrystalline silicon film is used as the crystalline silicon film.

The operating conditions are such that the P-channel TFT exemplified in FIG. 1 is used for an active matrix driving device of a liquid crystal display device.
Drain bias (V _D ): V _D = −10V,
Source bias (V _S ): V _S = 0V,
“ON” gate voltage: Vg (ON) = − 10V,
“OFF state” gate voltage: Vg (OFF) = 10V,
“On / off cycle”: 1 ms (1 kHz).

  In the results shown in FIG. 2, the distance x between the drain side region of the light shielding film and the source side region of the light shielding film is equal to the gate electrode length L and the length d of the LDD region provided on both sides of the gate electrode. On the other hand, x = L is selected.

At that time, the threshold gate voltage V _th (τ = 0) in the initial state is
In the structure in which the drain side region of the light shielding film and the source side region of the light shielding film are electrically interconnected, V _th (τ = 0) = − 2.4V,
In a structure in which the drain side region of the light shielding film and the source side region of the light shielding film are electrically separated, V _th (τ = 0) = − 2.6V.

Thus, in the initial state threshold gate voltage V _th (τ = 0), the drain side region of the light shielding film and the source side region of the light shielding film are electrically separated from the structure. There is a difference between the structure being considered. This difference is determined to be due to the difference in the influence of the potential of the light shielding film on the channel region between the electrically interconnected structure and the electrically isolated structure.

The result shown in FIG. 2 is that when a structure (electrically connected) in which the drain side region of the light shielding film and the source side region of the light shielding film are electrically interconnected is selected, Compared with a structure in which the source side region of the light shielding film is electrically isolated (no electrical connection), an increase in threshold gate voltage V _th accompanying an increase in continuous operation time under the above operating conditions, ΔV It shows that _th can be suppressed.

When the continuous operation is performed under the above operating conditions, the factors causing the rise of the threshold gate voltage V _th and ΔV _th are the potential (V _BD (t)) of the drain side region of the light shielding film and the source side region of the light shielding film. It is considered that this is a time-dependent shift of the potential (V _BS (t)).

Specifically, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film gradually become lower as the continuous operation time becomes longer. It is thought that it is caused by becoming (decreasing). The decrease in the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film is caused by the drain side region of the light shielding film and the source side region of the light shielding film. In addition, it is considered that the charge is gradually accumulated as the continuous operation time becomes longer.

The decrease in the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film is caused by the drain side region of the light shielding film / underlayer / source side of the light shielding film. The MIM structure composed of regions induces a decrease in the potential V _{under-channel} (t) of the base layer 3 portion of the MIM structure (capacitor C _DIS ). That is, it is presumed that a decrease in the potential V _{under-channel} (t) of the lower surface of the portion located immediately below the channel region of the underlayer 3 is a factor causing an increase in threshold gate voltage V _th and ΔV _th. The

In the structure in which the drain side region of the light shielding film and the source side region of the light shielding film are electrically interconnected (with electrical connection), the potential (V _BD (t)) of the drain side region of the light shielding film and the light shielding The potential (V _BS (t)) of the source side region of the film is substantially equal to the potential of the drain region when the drain side region of the light shielding film and the source side region of the light shielding film are symmetrically arranged as described above. The average potential of (V _D (t)) and the potential of the source region (V _S (t)) is maintained. Therefore, accumulation of charges injected through the MIS structure portion is suppressed.

On the other hand, in the structure in which the drain side region of the light shielding film and the source side region of the light shielding film are electrically separated (without electrical connection), the drain side region of the light shielding film and the source side of the light shielding film as described above. When the regions are arranged symmetrically, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film are different as described above. . For this reason, it is determined that the accumulation of charges injected through the MIS structure portion is relatively increased.

  In the TFT illustrated in FIG. 1, the light shielding film 2 is formed in a “U-shaped” pattern, but there are two third regions provided in the region where the silicon film 4 is not formed. Thus, it can also be formed in a “B-shaped” pattern. At this time, the periphery of the channel region is surrounded by the “B” -shaped pattern, but the region where the light shielding film 2 is formed and the channel region are arranged so as not to overlap.

  Further, in the TFT illustrated in FIG. 1, the formation region of the light-shielding film 2 having a “U” shape is arranged so as not to overlap the formation region of the gate electrode film 6 and the gate line. Therefore, the potential (Vg) of the gate electrode film 6 and the gate line is not substantially affected by the potential of the light shielding film 2.

  Even when the light-shielding film 2 is formed in a “B” -shaped pattern, the gate electrode film 6 and the potential (Vg) of the gate line do not substantially affect the potential of the light-shielding film 2. It is desirable to select.

When the third region provided in the region where the silicon film 4 is not formed in the light shielding film 2 is arranged so as to partially overlap the gate electrode film 6 and the gate line formation region, the light shielding film 2 / An MIM structure (capacitor _{CGI (D / S)} ) of (underlayer 3 + gate insulating film 5) / gate electrode film 6 (gate line) is formed. In that case, the MIM structure (capacitor C _{GI (D / S)} ) with respect to the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film. ), The potential (Vg) of the gate electrode film 6 is also affected.

  FIG. 3 schematically shows a cross-sectional view in the A-A ′ direction of the TFT shown in FIG. 1. The configuration of the TFT shown in FIG. 1 will be described below with reference to FIG.

  The TFT shown in FIG. 1 is used in an active matrix driving device of a liquid crystal display device. The upper surface of the TFT is covered with a first interlayer insulating film, and the drain region and the source region of the TFT are contact holes 11. Is electrically connected to the electrode film. One of the electrode films is integrated with a drain line 14 formed on the first interlayer insulating film 10. The other of the electrode films is connected to a pixel electrode 13 formed on the second interlayer insulating film 15 covering the first interlayer insulating film 10 and a contact hole provided in the second interlayer insulating film 15. Electrically connected.

  The TFT shown in FIG. 1 is configured as a top gate type crystalline silicon thin film transistor in order to provide a light shielding film. In particular, it has the shape of a planar TFT, and a patterned crystalline silicon film 4 formed on the upper surface of the base layer 3 made of an insulating material is used as an operation layer. After patterning the crystalline silicon film of the first conductivity type, a high concentration impurity doped region is formed as the drain region 9 and the source region 8 by doping the second conductivity type impurity at a high concentration. Low-concentration impurity regions 7 each doped with a second conductivity type impurity at a low concentration are formed on both sides of the gate electrode, on the drain region side and on the source region side. Accordingly, the crystalline silicon film of the first conductivity type directly under the gate electrode sandwiched between the low concentration impurity regions 7 is used as the channel region.

  A gate insulating film 5 is formed so as to cover the upper surface of the patterned crystalline silicon film 4. The gate electrode film 6 is formed on the upper surface of the gate insulating film 5. When a gate voltage equal to or higher than the threshold gate voltage is applied to the gate electrode, a channel is formed immediately below the gate electrode film 6 at the interface between the gate insulating film 5 and the crystalline silicon film of the first conductivity type. State ".

  The TFT is manufactured on a substrate made of a light transmissive insulating material, that is, an insulating transparent substrate 1, and for the purpose of shielding light incident from the back side of the insulating transparent substrate 1, the insulating transparent substrate 1. A patterned light-shielding film 2 is formed so as to be in contact with the lower surface of the underlayer 3 on the upper surface of the substrate. In order to improve the adhesion between the patterned light shielding film 2 and the insulating transparent substrate 1 disposed on the upper surface of the insulating transparent substrate 1, the light shielding film for the light shielding film is provided on the upper surface of the insulating transparent substrate 1. After forming the underlayer, the patterned light-shielding film 2 can be formed on the upper surface of the underlayer for the light-shielding film.

  Since the patterned light-shielding film 2 is used for the purpose of shielding light incident from the back side of the insulating transparent substrate 1, a conductive material that does not transmit light, for example, a metal material such as chromium is used. Produced. When using a metal material, it is desirable that the thickness of the light shielding film 2 is selected to be 20 nm or more in order to achieve light shielding properties. When the light shielding film 2 is formed on the upper surface of the insulating transparent substrate 1, stress is applied to the insulating transparent substrate 1. It is desirable to select the thickness of the light-shielding film 2 within a range not exceeding 500 nm so that the insulating transparent substrate 1 is not greatly warped by the applied stress.

  In addition, as a conductive material that does not transmit light, a conductive non-light-transmitting resin material, for example, a resin material having a light blocking performance in which an organic pigment such as carbon is dispersed is used as a light blocking film. 2 can also be used. When this resin black matrix film is used, the film thickness is within a range where the desired light shielding performance can be exhibited, and the silicon film formed thereon is formed by a step caused by the patterned light shielding film 2. If a film | membrane is not cut | disconnected, it will not specifically limit. When the resin black matrix film is used, the film thickness is preferably selected in the range of 0.5 to 2 μm.

  Compared with a conventional TFT without a light shielding film (hereinafter referred to as TFT-B), the TFT structure shown in FIG. 1 has an insulating transparent substrate 1 except for the patterned light shielding film 2 described above. The structure provided on the upper portion of the base layer 3 can be substantially the same.

  The patterned light shielding film 2 is divided into a drain side region of the light shielding film disposed on the drain region 9 side and a source side region of the light shielding film disposed on the source region 8 side with the channel region interposed therebetween. Has been. At this time, it is desirable to perform division so that the drain side region of the light shielding film and the source side region of the light shielding film are arranged symmetrically with respect to the center of the gate electrode.

In the form used for the active matrix driving device of the liquid crystal display device, the potential (V _D (t)) of the drain region 9 and the source region 8 are changed as a result of switching the bias applied to the drain line 14 when driving the liquid crystal display device. There is a step of performing an “on / off operation” in a state where the potential (V _S (t)) is switched. At this time, if the drain side region of the light shielding film and the source side region of the light shielding film are arranged at symmetrical positions, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential of the source side region of the light shielding film ( The effects due to V _BS (t)) can be equalized. For example, when the bias applied to the drain line 14 is switched, “ON” is caused by the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film. The change in resistance of the LDD region in the “state” does not change. As a result, it is possible to suppress variations in TFT characteristics associated with the “switching operation” for switching the bias applied to the drain line 14. Therefore, in the form used for the active matrix driving device of the liquid crystal display device, the drain region 9 and the drain side LDD region, the source region 8 and the source side LDD region are arranged symmetrically with respect to the center of the gate electrode. The drain side region of the light shielding film and the source side region of the light shielding film are preferably arranged symmetrically with respect to the center of the gate electrode with the channel region interposed therebetween.

  The underlayer 3 is formed so as to cover the patterned light-shielding film 2 and is used as an underlayer when the amorphous silicon film is vapor-phase grown. The underlayer 3 is also used to electrically separate the patterned light-shielding film 2 from the patterned crystalline silicon film 4 to be produced.

  Therefore, the underlayer 3 is composed of a silicon oxide film or a laminate of a silicon nitride film and a silicon oxide film. In the case of adopting a laminated structure of silicon nitride film / silicon oxide film, a structure is selected in which the upper layer side serving as a base when the amorphous silicon film is vapor-phase grown is a silicon oxide film. That is, when an amorphous silicon film grown by vapor phase is crystallized to produce a crystalline silicon film, silicon oxide is compared with the interface state density generated at the interface between the silicon nitride film and the crystalline silicon film. The interface state density generated at the interface between the film and the crystalline silicon film is low. Accordingly, in order to keep the interface state density at the interface between the underlying layer 3 and the patterned crystalline silicon film 4 low, the upper surface of the underlying layer 3 is made of a silicon oxide film.

  Next, in order to crystallize the amorphous silicon film formed on the base layer 3, an excimer laser or the like is irradiated to melt the amorphous silicon film locally. At that time, when the amorphous silicon film is locally heated, heat is conducted to the base layer 3 side. When the film thickness of the underlayer 3 is thin, heat quickly propagates to the patterned light-shielding film 2 located therebelow. The patterned light-shielding film 2 is made of a metal material or a conductive non-light-transmissive material. Compared with the thermal conductivity of the light-transmissive insulating material for forming the base layer 3, the patterned light-shielding film 2 is made of a metal material or a conductive material. The heat conductivity of the non-light transmissive material is remarkably excellent. Accordingly, in the patterned light shielding film 2, in-plane thermal diffusion (lateral thermal diffusion) proceeds. Therefore, when the thickness of the underlayer 3 is thin, the temperature of the locally melted portion is rapidly lowered by the pulse laser beam irradiation due to in-plane thermal diffusion (lateral thermal diffusion), It may be difficult to obtain sufficient crystallinity.

  Therefore, it is preferable to select the film thickness of the underlayer 3 to be 100 nm or more. Furthermore, it is more preferable to select the film thickness of the underlayer 3 to be 600 nm or more. In particular, when the film thickness is 600 nm or more, the influence of the step of the patterned light-shielding film 2 can be reduced. Therefore, when a crystalline silicon film is formed on the upper surface of the base layer 3, a uniform crystal is formed. Can be obtained. FIG. 3 illustrates a form in which the upper surface of the base layer 3 is flattened and the step of the patterned light-shielding film 2 is not affected when the crystalline silicon film is manufactured.

  In addition, when the film thickness of the base layer 3 is too thick, it costs and the stress is applied to the insulating transparent substrate 1. It is desirable to select the film thickness of the underlayer 3 within a range not exceeding 1.5 μm so that the insulating transparent substrate 1 is not greatly warped by the applied stress.

  In the patterned light shielding film 2, there is a distance of length x between the drain side region of the light shielding film and the source side region of the light shielding film. Light that enters from the back side of the insulating transparent substrate 1 and passes through a region where the light shielding film 2 is provided, which is provided on the patterned light shielding film 2, passes through the base layer 3 made of a light-transmissive insulating material. The bottom surface of the patterned crystalline silicon film 4 is reached. Specifically, in the patterned crystalline silicon film 4, a channel region made of the first conductive crystalline silicon film and a part of the LDD regions on both sides of the channel region are patterned light shielding film 2. In this case, light is not shielded and light enters the region.

  When the TFT is in the “on state”, a current flows through the channel region and the LDD regions on both sides thereof. Therefore, among electrons and holes generated by absorption of incident light, those corresponding to minority carriers are rapidly recombined by the majority carriers and disappear. Accordingly, electrons and holes generated by absorption of incident light do not substantially generate a light leakage current.

  On the other hand, when the TFT is in the “off state”, the channel region made of the first conductive crystalline silicon film, the LDD region made of the second conductive crystalline silicon film on both sides thereof, and the pn junction portion A depletion layer is formed. Electrons and holes generated by absorption of light incident on the depletion layer portion are not lost by recombination. Due to the electric field present in the depletion layer, the generated electrons and holes are transported in the opposite directions, and as a result, a light leakage current is generated. Therefore, by reducing the volume of the depletion layer portion that exists when the TFT is in the “off state”, it is possible to suppress light leakage current caused by incident light. Specifically, by reducing the thickness of the patterned crystalline silicon film 4, the volume of the depletion layer portion is reduced.

  For example, the LDD region is formed by doping a second conductivity type impurity at a low concentration from the upper surface of the first conductive crystalline silicon film. When the film thickness of the first conductive crystalline silicon film is thick, the first conductive crystalline silicon portion remains below the LDD region, and this portion becomes a depletion layer portion. Therefore, it is preferable to reduce the thickness of the crystalline silicon film so that the thickness of the crystalline silicon film does not become thicker than the depth of the LDD region to be formed.

  On the other hand, in the high concentration impurity doped region used as the drain region and the source region, when the thickness of the crystalline silicon film is reduced, the doping concentration of the impurity is further increased, so that the resistance value of the high concentration impurity doped region is increased. Avoid climbs. Accordingly, when the thickness of the crystalline silicon film becomes thinner than necessary, the density of damaged portions of the crystal lattice increases due to, for example, ion implantation of high-concentration impurities. In addition, the introduced impurities accumulate at a high concentration at the interface between the crystalline silicon film and the underlayer 3. If the crystal lattice damage is not sufficiently recovered and impurities accumulated at a high concentration in the vicinity of the interface are precipitated, it causes amorphization. In order to recover high-density crystal lattice damage and avoid precipitation of impurities accumulated at high concentration, activation heat treatment is performed at high temperature, concentration is uniformed by thermal diffusion, crystal lattice Need to recover.

  When a glass substrate is used as the insulating transparent substrate 1, the temperature of the activation heat treatment cannot be selected to be higher than about 600 ° C., which is a temperature at which the glass substrate is greatly deformed.

  If recovery of high-density crystal lattice damage cannot be achieved, the crystallinity is lowered, the activation of implanted impurities is not sufficient, and the sheet resistance value of the high-concentration impurity doped region is increased.

  Considering the above two requirements, the thickness of the crystalline silicon film is preferably selected in the range of 15 to 100 nm. In particular, the thickness of the crystalline silicon film can be selected in the range of 20 to 50 nm.

  Note that a polycrystalline silicon film can be employed as the crystalline silicon film 4.

  A gate insulating film 5 is formed so as to cover the patterned crystalline silicon film 4. The gate insulating film 5 is a silicon oxide film or a laminate of a silicon oxide film and a silicon nitride film, and has a sufficient withstand voltage so as not to be broken down by a gate voltage applied to the gate electrode. A first interlayer insulating film 10 is formed so as to cover the gate insulating film 5 and the gate electrode film 6. The first interlayer insulating film 10 is composed of a silicon oxide film, a silicon nitride film, or a laminated film thereof. Furthermore, an electrode film 12 connected to the source region and the drain region is formed in the first interlayer insulating film 10 through the contact hole 11.

  FIG. 4 is a diagram schematically showing an enlarged structure in the vicinity of the channel region in the cross-sectional structure of the P-channel TFT shown in FIG.

  The patterned light-shielding film 2 is divided into two regions, and has a length x between the drain-side region of the light-shielding film and the source-side region of the light-shielding film, which are arranged symmetrically with respect to the gate electrode. There is a distance. The length of the channel region (channel length) formed immediately below the gate electrode is L, and the length of the LDD regions provided on both sides of the channel region is d. FIG. 4 illustrates a mode in which the length (channel length) L of the channel region is equal to the gate electrode length. In addition, the drain side region of the light shielding film and the source side region of the light shielding film are illustrated as being arranged so that at least a part of the drain region and the source region overlap each other.

  The lower end of the LDD region reaches the interface between the underlayer 3 and the patterned crystalline silicon film 4, and the first conductive crystalline silicon portion does not remain under the LDD region. It has become. That is, when the TFT is in the “off state”, it is formed at the interface between the channel region made of the first conductive crystalline silicon film and the LDD region made of the second conductive crystalline silicon film. The structure has a depletion layer derived from the pn junction.

The film thickness t _polySi of the patterned crystalline silicon film 4 is t _polySi = 50 nm, the channel width W is W = 5 μm, the channel length L is L = 5 μm, and the length d of the LDD region is d = 1. In the structure selected to be .5 μm, TFTs with various lengths x selected between the drain side region of the light shielding film and the source side region of the light shielding film are produced, and their characteristics are compared. Note that the channel region made of the first conductive crystalline silicon film has n-type conductivity of n = 5 × 10 ¹⁶ cm ⁻³ , and the LDD region has an average carrier concentration p = 3 × 10 ¹⁷ cm ^{−. 3} has a p-type conductivity. Therefore, it has a P-channel field effect transistor structure.

Normally, a depletion layer on the n-type conductive crystalline silicon layer side in a pn junction composed of an n-type conductive crystalline silicon layer with a carrier concentration n and a p-type conductive crystalline silicon layer with a carrier concentration p The thickness t _depletion-n and the thickness t _depletion-p of the depletion layer on the p-type conductive crystalline silicon layer side satisfy the relationship of n · t _depletion-n = p · t _depletion-p . Therefore, in the pn junction constituted by the n-type conductive crystalline silicon layer of n = 5 × 10 ¹⁶ cm ⁻³ and the p-type conductive crystalline silicon layer of p = 3 × 10 ¹⁷ cm ⁻³ , the n Of the depletion layer thickness t _depletion-n on the p-type conductive crystalline silicon layer side and the depletion layer thickness t _depletion-p on the p-type conductive crystalline silicon layer side (t _depletion-n / t _depletion-p ) is a _{(t depletion-n / t depletion} -p) = p / n = (3 × 10 17/5 × 10 16) = 6/1.

In general, the electric field E generated in the pn junction to which the reverse bias is applied has the maximum electric field strength E _max at the interface of the pn junction, and the electric field strength is zero at both ends of the depletion layer. That is, the electric field E generated at the pn junction exists only in the depletion layer. In a p region that is not depleted in a pn junction to which a reverse bias is applied, an electron-hole pair generated by light absorption immediately disappears because electrons recombine with a large amount of holes. In the n region which is not depleted, the electron-hole pair generated by light absorption disappears immediately because the hole recombines with a large amount of existing electrons. On the other hand, when electrons and hole pairs are generated by light absorption in the depletion layer, the electric field E transports electrons to the n region side and holes to the p region side. As a result, in a pn junction to which a reverse bias is applied, a photocurrent flows from the n region to the p region due to electron-hole pairs generated by light absorption in the depletion layer.

  Furthermore, an electric field is also formed at the interface between the drain-side LDD region (p region) and the underlying layer, and a depletion region is formed at the interface between the drain-side LDD region (p region) and the underlying layer. Has been. As a result, a photocurrent flows due to electron-hole pairs generated by light absorption in the depletion region on the lower surface side of the drain-side LDD region (p region).

  Therefore, when the P-channel TFT shown in FIG. 3 is in the “off state”, a depletion layer caused by a pn junction at the boundary between the drain side LDD region (p region) and the channel region (n region), and the drain side A photocurrent flows due to electron-hole pairs generated by light absorption in the depletion region formed at the interface between the LDD region (p region) and the base layer.

  On the other hand, the patterned light shielding film 2 is made of a Cr film having a thickness of 50 nm, and the underlayer 3 is made of a silicon oxide film having a thickness of 500 nm.

First, regarding the light leakage current, in the “off state”, the leakage current I _light-on when irradiating light from a white LED light source exhibiting a luminance of about 15000 cd / m ² from the back surface side of the insulating transparent substrate 1. And the leakage current I _light-off when no light is irradiated, and the difference (I _light-on −I _light-off ) is _defined as the light leakage current I _leak-photo (x). In addition, when x ≧ L / 2, the measurement conditions satisfying I _light-on >> I _light-off are selected, and in that range, the light leakage current I _leak-photo (x) = I _light-on is set. .

The measurement is performed under the following “off state” operating conditions.
Drain bias (V _D ): V _D = −10V,
Source bias (V _S ): V _S = 0V,
“OFF state” gate voltage: Vg (OFF) = 10V
In addition, with respect to t _polySi , L, and d, the same size as described above is selected and the light leakage current is also applied to the structure without the light shielding film, that is, the conventional P-channel TFT (TFT-B) under the above conditions. We are measuring.

I _leak-photo (x) / I _leak-photo (x = _∽ ) normalized by the light leak current I _leak-photo (x = ∽) measured in the TFT-B having a structure without the light shielding film. ) Is the “normalized light leakage current”.

  FIG. 5 shows the result of plotting the “normalized light leakage current” measured under the above measurement conditions against the length x between the drain side region of the light shielding film and the source side region of the light shielding film. Show. FIG. 5 shows the results when a polycrystalline silicon film is used as the crystalline silicon film.

  As the length x between the drain side region of the light shielding film and the source side region of the light shielding film increases, the “standardized light leakage current” increases. When x is in the range of L ≦ x ≦ L + 2d, the “standardized light leakage current” is in the range of 0.35 to 0.55, but when x = L + 3d, the “standardized light leakage current” is 0. .95, increasing rapidly. Therefore, by setting L ≦ x ≦ L + 2d, the effect of suppressing a rapid increase in “normalized light leakage current” is exhibited.

  FIG. 5 shows the “normalization” measured when the length x between the drain side region of the light shielding film and the source side region of the light shielding film is selected as L / 2, L, L + d, L + 2d, and L + 3d. The “light leakage current” is shown in contrast.

  When no light shielding film is provided (in the case of TFT-B in FIG. 5), the drain region, the source region, the LDD region, and the channel region are not shielded from light. Light absorption occurs in the entire depletion layer formed in the pn junction, and a photocurrent is generated due to the generated electron and hole pairs.

In addition, the lower surfaces of the drain region (p ⁺ region) and the LDD region (p region) on the drain side are in contact with a base layer made of a light-transmitting insulating material, and an SI junction is formed at the interface. . Further, the lower surfaces of the source region (p ⁺ region) and the LDD region (p region) on the source side are in contact with a base layer made of a light-transmitting insulating material, and an SI junction is formed at the interface. Further, the lower surface of the channel region is also in contact with the base layer made of a light-transmissive insulating material, and an SI junction is formed at the interface.

In the "off-state", the potential of the drain region 9 of the potential (V _D (t)) and the source region 8 (V _S (t)), so that a _{V S (t)> V D} (t), An electric field exists at least at the interface between the drain region (p ⁺ region) and the underlayer 3. A space charge for forming the electric field is present in the SI junction between the drain region (p ⁺ region) and the underlying layer 3, that is, a depletion region is formed in the SI junction. In addition, an electric field also exists at the interface between the drain side LDD region (p region) and the underlying layer, which is in contact with the drain region (p ⁺ region). The space charge that forms the electric field exists in the drain side LDD region (p region) portion and the SI junction portion of the underlying layer where this electric field exists, that is, the SI junction portion is depleted. A region is formed. Since the drain region (p ⁺ region) is a high-concentration impurity doped region, while the LDD region is a low-concentration impurity doped region, it is formed at the SI junction between the drain region (p ⁺ region) and the underlayer 3. The thickness of the depletion region is much thinner than the thickness of the depletion region formed in the LDD region (p region) portion on the drain side and the SI junction portion of the base layer.

An electric field exists at least at the interface between the source region (p ⁺ region) and the underlayer 3. Charges (holes) for forming the electric field are accumulated in the SI junction portion between the source region (p ⁺ region) and the base layer 3, that is, a depletion region is formed in the SI junction portion. Not. In addition, an electric field also exists at the interface between the source side LDD region (p region) and the underlying layer in contact with the source region (p ⁺ region). Charges (holes) that form the electric field are accumulated in the source-side LDD region (p region) portion and the SI junction portion of the underlying layer where this electric field exists, that is, in the SI junction portion. The depleted region is not formed. Further, the depletion region is not substantially formed even in the SI junction portion between the channel region and the base layer 3.

In the “off state”, in addition to the depletion layer formed in the pn junction composed of the LDD region / channel region described above, the drain region (p ⁺ region) and the drain side LDD region (p region) Light absorption occurs in the depletion region formed in the SI junction of the formation, and a photocurrent is generated due to the generated electron and hole pairs.

  At x = L + 3d, a substantial part of the source region and the drain region is shielded from light, but a part of the drain region, the drain side LDD region, the channel region, the source side LDD region, and a part of the source region are shielded from light. Not. In the “off state”, a depletion region formed in the SI junction portion of a part of the drain region and the lower surface of the LDD region on the drain side, and a depletion layer formed in a pn junction composed of the LDD region / channel region In this case, light absorption occurs and a light leakage current due to the generated electron-hole pair occurs. At this time, since a considerable portion of the drain region is shielded from light, the “normalized light leakage current” is slightly reduced to 0.95, compared with the case where no light shielding film is provided (in the case of TFT-B). It is judged that

When x = L / 2, the LDD region and the boundary portion of the LDD region / channel region are shielded from light, but half of the channel region is not shielded. Light absorption occurs. In the “off state”, when a part of the depletion layer due to the pn junction is present in a half of the channel region, light absorption is performed in the depletion layer present in the half of the channel region. Occurs, and a light leakage current due to the generated electron and hole pair is generated. Even when x = L / 2, the “normalized light leakage current” is 0.25, and there is a part of the depletion layer due to the pn junction in the half of the channel region that is not shielded from light. It is judged that That is, in the “off state”, due to the pn junction, the thickness t _{depletion of the depletion} layer on the channel region side extending from the junction surface of the pn junction on the drain side (the boundary surface between the LDD region / channel region on the drain side) _-n is determined to be L (5 μm)> t _depletion-n > L / 4 (1.25 μm).

Of the thickness t _depletion-n of the _depletion layer on the channel region side, the “normalized light leakage current” is 0.25 due to the light leakage current generated in the portion of (t _depletion-n −L / 4). It is presumed that

  When x = L, the LDD region is shielded from light, but the channel region is not shielded from light. Therefore, light absorption occurs in the channel region. That is, in the “off state”, light absorption occurs in a portion of the depletion layer formed in the pn junction composed of the LDD region / channel region and exists in the channel region, which is caused by the generated electron and hole pairs. Light leakage current is generated. Even when x = L, the “normalized light leakage current” is 0.35, and it is determined that a substantial portion of the depletion layer due to the pn junction exists in the channel region that is not shielded from light.

That is, it is presumed that the “normalized light leakage current” is 0.35 due to the light leakage current generated in the _depletion layer thickness t _depletion-n of the channel region side.

Temporarily, the ratio of “normalized light leakage current” at x = L / 2 and “normalized light leakage current” at x = L, 0.25 / 0.35, is (t _depletion-n −L / 4). Assuming that the ratio is equal to the ratio of / t _depletion-n , t _depletion-n = (0.35 / 0.10) · L / 4 = 7/8 · L and the thickness t _{depletion- of the depletion} layer on the channel region side _n is estimated.

The ratio of the _depletion layer thickness t _depletion-n on the channel region side to the depletion layer thickness t _depletion-p on the LDD region side (t _depletion-n / t _depletion-p ) is (t _depletion-n / _{t depletion-p) = p /} n = assuming ^{(3 × 10 17/5 ×} 10 16) = a 6/1, the thickness t _depletion-p of the depletion layer of the LDD region side, t _depletion-p = _1/6 · t _depletion-n = _7/48 · L is estimated. Since L = 5 μm and d = 1.5 μm, it is estimated that t _depletion-p = _7/48 · (10/3 · d) ≈1 / 2 · d.

  On the other hand, when x = L + 2d, since the LDD region and the channel region are not shielded from light, light absorption occurs in the entire depletion layer formed in the pn junction composed of the LDD region / channel region in the “off state”. A photocurrent is generated due to the generated electron-hole pairs. Further, light absorption occurs in the depletion region formed in the drain side LDD region (p region) and the SI junction portion of the base layer, and a photocurrent due to the generated electron and hole pair is also generated. However, even when x = L + 2d, the “standardized light leakage current” is 0.55, and light leakage current is generated as compared with the case where no light shielding film is provided (in the case of TFT-B) or when x = L + 3d. Is significantly suppressed.

  In addition, when x = L + d, since the channel region is not shielded from 1/2 of the LDD region, in the “off state”, among the depletion layers formed in the pn junction composed of the LDD region / channel region, Light absorption occurs in a portion that exists in the channel region and a portion that exists in a half of the LDD region, and a photocurrent due to the generated electron-hole pair is generated. When x = L + d, the “normalized light leakage current” is 0.50, which is only slightly smaller than the “normalized light leakage current” of 0.55 at x = L + 2d. Therefore, it is determined that most of the depletion layer existing in the LDD region among the depletion layers formed in the pn junction composed of the LDD region / channel region exists in a half of the LDD region. The

Note that the estimated thickness t _depletion-p ≈ 1/2 · d of the _depletion layer on the LDD region side due to the pn junction is a half of the LDD region on the drain region side (1 / 2 · d).

From the above examination results, by selecting L ≦ x ≦ L + 2d, in the “off state”, the depletion layer formed in the pn junction composed of the LDD region / channel region described above, and the drain region (p ^It can be seen that generation of light leakage current due to light absorption in the depletion region formed in the ⁺ region) and the LDD region (p region) on the drain side and the SI junction portion of the underlayer can be effectively suppressed.

Further, LDD regions are formed on both sides of the gate electrode, and the length of the gate electrode (gate electrode length) L _gate is equal to the length of the channel region (channel length) L formed immediately below the gate electrode (L = L _gate ) structure is preferably employed. This structure can be formed in a self-aligned manner when the LDD regions are formed on both sides of the gate electrode film, and the manufacturing process is not complicated.

On the other hand, when the length (channel length) L of the channel region and the length d of the LDD regions provided on both sides thereof are long, the voltage (V _D −V _S ) applied between the source electrode and the drain electrode is increased. There is a need. Along with this, power consumption also increases.

Therefore, when the voltage (V _D −V _S ) applied between the source electrode and the drain electrode is in the range of 50 V ≧ | V _D −V _S | ≧ 0.1 V, the length of the channel region (channel The length (L) is preferably selected in the range of 100 μm ≧ L ≧ 2 μm, and the length d of the LDD regions provided on both sides thereof is preferably selected in the range of 10 μm ≧ d ≧ 0.1 μm.

  When selecting L and d in the above range, if a combination of (L = 2 μm, d = 10 μm) is selected, d / L = 10/2, and (L = 100 μm, d = 0.1 μm) When a combination is selected, d / L = 1/1000.

Next, when adopting a structure that is electrically floating without controlling the potential of the light shielding film, the influence of the potential of the light shielding film on the threshold gate voltage _Vth is examined. Specifically, when the configuration shown in FIG. 4 is adopted, the threshold value gate voltage V _th (x) is changed by variously changing the length x between the drain side region of the light shielding film and the source side region of the light shielding film. Is measuring the change.

At this time, the threshold gate voltage V _th (x = ∽) of the structure without the influence of the potential of the light shielding film, specifically, the structure without the light shielding film, that is, the conventional TFT (TFT-B). Is measured separately. Then, the difference between the threshold gate voltage V _th (x) measured in the structure of length x between the drain side region of the light shielding film and the source side region of the light shielding film, ΔV _th (x) = (V _th (X) −V _th (x = ∽)) is the shift amount of the threshold gate voltage V _th (x).

Further, x = 0, that is, a structure in which a light shielding film is formed so as to shield the entire surface from the source region to the channel region, that is, a conventional P-channel TFT having a structure shown in FIG. 6 (hereinafter referred to as TFT-C). ), The threshold gate voltage V _th (x = 0) is separately measured while the electrode film electrically connected to the light-shielding film is in a floating state.

At that time, the thickness t _polySi of the patterned crystalline silicon film 4 is t _polySi = 50 nm, the channel width W is W = 5 μm, the channel length L is L = 5 μm, and the length d of the LDD region is In the structure where d = 1.5 μm is selected, TFTs having various lengths x selected between the drain-side region of the light-shielding film and the source-side region of the light-shielding film are manufactured, and their characteristics are compared. . Note that the channel region made of the first conductive crystalline silicon film has n-type conductivity of n = 5 × 10 ¹⁶ cm ⁻³ , and the LDD region has an average carrier concentration p = 3 × 10 ¹⁷ cm ^{−. 3} has a p-type conductivity. Therefore, it has a P-channel field effect transistor structure.

  On the other hand, the patterned light shielding film 2 is made of a Cr film having a thickness of 50 nm, and the underlayer 3 is made of a silicon oxide film having a thickness of 500 nm.

The measurement of the threshold gate voltage V _th (x) is performed under the following conditions without light irradiation.
Drain bias (V _D ): V _D = −10V,
Source bias (V _S ): V _S = 0V,
“OFF state” gate voltage: Vg (OFF) = 10V
The gate voltage Vg that changes from the “off state” to the “on state” is measured. The gate voltage Vg at which the source-drain current I _DS (A) is 1 × 10 ⁻⁷ A is the threshold gate voltage V _th (x).

FIG. 5 shows the “shift amount of threshold gate voltage V _th (x): ΔV _th (x)” measured under the above measurement conditions between the drain side region of the light shielding film and the source side region of the light shielding film. The plotted result is shown with respect to the length x.

When the length x between the drain side region of the light shielding film and the source side region of the light shielding film is in the range of x <L, the drain side of the light shielding film is disposed below the channel region via the base layer 3. The region and the source side region of the light shielding film are partially arranged. Therefore, the lower surface of the channel region is directly affected by the potential of the drain side region (V _BD (t)) of the light shielding film and the potential of the source side region (V _BS (t)) of the light shielding film via the base layer 3. It becomes the state which reaches. As a result, in the range of x <L, x decreases and “shift amount of threshold gate voltage V _th (x): ΔV _th (x)” increases.

As in the TFT illustrated in FIG. 1, in the range of x> L, the formation region of the light-shielding film 2 having a “U-shaped” pattern is the formation region of the channel region, the gate electrode film 6 and the gate line 5. It is arranged so as not to overlap. Accordingly, the potentials (Vg (OFF)) of the gate electrode film 6 and the gate line 5 do not substantially affect the potentials of the light shielding film 2 (V _BD (t) and V _BS (t)). It has become.

On the other hand, in the range of 0 <x <L, the formation region of the light-shielding film 2 having the “U-shaped” pattern is arranged so as to partially overlap the formation region of the channel region and the gate electrode film 6. Yes. The light shielding film 2 and the gate electrode film 6 partially overlap with each other with the base layer 3 and the gate insulating film 5 interposed therebetween. As a result, the MIM structure (capacitor _{CGI (D / S)} ) of the light shielding film 2 / (underlayer 3 + gate insulating film 5) / gate electrode film 6 is formed. Therefore, the MIM structure (capacitor C _{GI (D / S)} ) with respect to the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film. In this arrangement, the potential (Vg (OFF)) of the gate electrode film 6 also has an influence via the.

Further, in the case of TFT-C (when x = 0), the formation region of the light shielding film 2 is arranged to have a wider overlap with the formation region of the channel region and the gate electrode film 6. The light shielding film 2 and the gate electrode film 6 overlap with each other with a wider area through the base layer 3 and the gate insulating film 5. As a result, the MIM structure (capacitor _{CGI (D / S)} ) of the light shielding film 2 / (underlayer 3 + gate insulating film 5) / gate electrode film 6 is formed. Therefore, the MIM structure (capacitor C _{GI (D / S)} ) with respect to the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film. Through this, the potential (Vg (OFF)) of the gate electrode film 6 has a greater influence.

On the other hand, in the range of L + 2d ≧ x ≧ L, the drain side region of the light shielding film and the source side region of the light shielding film are partially disposed below the LDD region via the base layer 3. Therefore, the lower surface of the channel region is not directly affected by the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film. ing. As a result, in the range of L + 2d ≧ x ≧ L, it can be considered that “the shift amount of the threshold gate voltage V _th (x): ΔV _th (x)” is substantially absent. In other words, in the range of L + 2d ≧ x ≧ L, "the threshold gate voltage V _th (x)", a structure not provided with the light shielding film, i.e., "the threshold gate voltage V _th of the TFT of the conventional structure (TFT-B) (X = ∽) ”.

The potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film are between the drain side region of the light shielding film and the source side region of the light shielding film. It depends on the length x and the film thickness of the underlayer 3. Accordingly, the variation in the length x and the film thickness of the base layer 3 is caused by the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film. Causes variation. At this time, if the length x is in the range of L + 2d ≧ x ≧ L, the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film Even if this variation occurs, the “threshold gate voltage V _th (x)” is substantially equal to the “threshold gate voltage V _th (x = ∽)”. When the TFT shown in FIG. 1 is used for an active matrix driving device of a liquid crystal display device, the length x between the drain side region of the light shielding film and the source side region of the light shielding film is in a range of L + 2d ≧ x ≧ L. If it is held at, it is possible to suppress variations in the “threshold gate voltage V _th (x)”.

When the results shown in FIG. 5 are examined in detail, “the shift amount of the threshold gate voltage V _th (x): ΔV _th (x)” is slightly different between x = L and x = L + 2d. Is shown. This difference is determined to be due to the slight difference in the influence of the potential of the light shielding film on the channel region between x = L and x = L + 2d. In other words, the channel region and the light shielding film do not overlap, but when x = L + 2d to x = L, it is determined that the potential of the light shielding film slightly affects the channel region. In the result shown in FIG. 2 described above, the channel region and the light shielding film do not overlap, but when x = L, the potential of the light shielding film slightly affects the channel region. It clearly suggests. On the other hand, when the results shown in FIG. 5 and the results shown in FIG. 2 are combined, the channel region and the light-shielding film do not overlap, but even when x = L, the potential of the light-shielding film is less than the channel region. It can be seen that the effect of this has been negligible.

When a TFT is used as an active matrix driving device of a liquid crystal display device, a gate voltage at the time of “off operation” used for the “on / off operation” of the TFT: Vg (OFF) and a gate voltage at the time of “on operation” : Vg (ON) is set in consideration of the variation ΔV _th of the “threshold gate voltage V _th ” of the TFT used. For example, the gate voltage Vg (OFF) at the “off operation” is Vg (OFF) <V _th −ΔV _th , and the gate voltage Vg (ON) at the “on operation” is Vg (ON)> V _th Set in the range of + ΔV _th . At this time, the difference (Vg (ON) −Vg (OFF)) between the gate voltage Vg (OFF) at the “off operation” and the gate voltage Vg (ON) at the “on operation” is at least (Vg ( ON) −Vg (OFF))> 2ΔV _th The drive voltage (gate voltage: Vg) used for the “on / off operation” of the TFT is set so as to satisfy the condition. When the TFT having the configuration shown in FIG. 1 is used, the variation of the “threshold gate voltage V _th (x)” is suppressed by maintaining the length x in the range of L + 2d ≧ x ≧ L. It is not necessary to set an increase (Vg (ON) −Vg (OFF)) of the driving voltage (gate voltage: Vg) unnecessarily large. Increase in drive voltage (gate voltage: Vg) in order to avoid display defects caused by variations in “threshold gate voltage V _th (x)” of individual TFTs used in active matrix drive devices of liquid crystal display devices It is not necessary to set the minute (Vg (ON) −Vg (OFF)) unnecessarily large.

In the TFT having the configuration shown in FIG. 1, the length x between the drain side region of the light shielding film and the source side region of the light shielding film is maintained in a range of L + 2d ≧ x ≧ L without fixing the potential of the light shielding film. As a result, the “light leakage current” in the “off state” is suppressed, and the variation in the “threshold gate voltage V _th (x)” is also reduced.

  In the first embodiment, for convenience, the first embodiment of the present invention or the second embodiment of the present invention will be described with reference to the embodiment adopting the shape of the planar TFT shown in FIG. The technical features of the thin film transistor according to the embodiment are described. The technical feature of the thin film transistor according to the first embodiment or the second embodiment of the present invention is that the shape of the planar TFT or the shape of the forward staggered TFT is any top gate type thin film transistor. It can also be applied when selecting.

Actually, when the shape of the forward stagger type TFT is adopted, the drain electrode is provided on the base layer, the drain region is formed on the drain electrode, the source electrode is provided on the base layer, and the source electrode A source region is formed thereon. Therefore, the drain side region of the light shielding film overlaps with the drain electrode through the base layer, and the source side region of the light shielding film overlaps with the source electrode through the base layer. In the overlapping portions, the MIM structure (capacitor C _D-MIM ) composed of the drain electrode / underlying layer / the light shielding film drain side region and the MIM structure composed of the source electrode / underlying layer / the light shielding film source side region, respectively. (Capacitor C _S-MIM ) is formed. In addition, the drain side region of the light shielding film overlaps with part of the drain region through the base layer, and the source side region of the light shielding film overlaps with part of the source region through the base layer. In that portion, the MIS structure (capacitor C _D-MIS ) composed of the drain region / underlayer / light shielding film drain side region and the MIS structure (capacitor C _S−) composed of the source region / underlayer / light shielding film source side region. _MIS ) is configured. Therefore, the technical feature of the thin film transistor according to the first embodiment or the second embodiment of the present invention is that the shape of the planar TFT or the shape of the forward staggered TFT is any top gate type thin film transistor. The same applies when selecting.

(Second Embodiment)
As a second embodiment of the present invention, a thin film transistor according to the first embodiment of the present invention having the structure shown in FIG. 4 for the method of manufacturing a thin film transistor according to the third embodiment or the fourth embodiment of the present invention. The manufacturing process will be described in detail with reference to the drawings.

  7A to 7D are process diagrams showing a manufacturing process of the thin film transistor according to the first embodiment of the present invention, specifically, the TFT whose cross-sectional structure is shown in FIG. 7A to 7D, the TFT shown in FIG. 3 is excluded from the manufacturing process of the second interlayer insulating film 15 and the pixel electrode 13 formed on the second interlayer insulating film 15. A series of steps for producing a planar type TFT in the following steps (a) to (i) is shown.

In the steps disclosed in FIGS. 7-1 to 7-4, a form in which a polycrystalline silicon film is employed as the crystalline silicon film can be selected.
Step (a)
First, on the insulating transparent substrate 1 such as glass, a metal film such as chromium that is used to manufacture the light shielding film 2 is formed.

  In a conventional TFT (TFT-C) provided with an electrode film for fixing the potential of the light shielding film shown in FIG. 6, when forming a contact hole in the base layer and forming an electrode film in contact with the light shielding film, In the etching process at the time of forming the contact hole, since the surface of the light shielding film in the opening is also etched, it is necessary to select the thickness of the light shielding film in consideration of the etching amount. That is, the thickness of the light shielding film must be selected to be equal to or greater than the etching amount.

In the TFT shown in FIG. 4, since the electrode film for fixing the potential of the light shielding film is not provided, the thickness of the light shielding film is the non-conductive conductivity used as described in the first embodiment. The film thickness is selected in consideration of the light shielding performance of the light transmissive material. When a metal film such as chromium is used, the thickness of the light shielding film can be set as thin as 20 nm or more and 500 nm or less.
Step (b)
After forming a photoresist pattern by lithography on the light shielding film 2, the light shielding film 2 is patterned into a desired shape using dry etching, wet etching, or both means.

  The planar shape of patterning of the light shielding film 2 is a “U-shaped” pattern as illustrated in the top view shown in FIG. 1, and is divided into two regions on the left and right. The length x between the left and right two regions is selected in a range of L + 2d ≧ x ≧ L with respect to the length L of the TFT channel region and the length d of the LDD region provided on both sides thereof. . Also, the end opposite to the side facing the channel region of the “U-shaped” pattern is overlapped with the high concentration impurity doped region which becomes the source region and drain region of the TFT. The size of the outer periphery of the “U-shaped” pattern is selected.

At this time, as shown in FIG. 4, the length L _shield-D of the drain side region of the light shielding film and the length L _shield-S of the source side region of the light shielding film overlap with the drain region and the source region of the TFT. By selecting, a part of the LDD region of the TFT and the boundary portion between the LDD region and the source region and the drain region are shielded from light.

As described above, in the structure shown in FIG. 4, the length L of the TFT channel region and the length d of the LDD region provided on both sides thereof are in the range of 100 μm ≧ L ≧ 2 μm, 10 μm ≧ d ≧ 0. By selecting in the range of 1 μm, the voltage (V _D −V _S ) applied between the source electrode and the drain electrode is in the range of 50 V ≧ | V _D −V _S | ≧ 0.1 V.

The length L _shield-D of the drain side region of the light shielding film and the length L _shield-S of the source side region of the light shielding film are usually selected sufficiently longer than the length d of the LDD region.

In order to obtain a sufficiently high current density in the “on state” (on current density), it is necessary to reduce the resistance in the “on state”. Specifically, it is necessary to shorten the length L of the TFT channel region and the length d of the LDD regions provided on both sides thereof to some extent. On the other hand, even when the length d of the LDD region is shortened to some extent, the length L _shield-D of the drain side region of the light shielding film and the length L _shield-S of the source side region of the light shielding film can be sufficiently ensured. . Therefore, the patterning process itself of the light shielding film 2 can realize a sufficient process margin.
Step (c)
A silicon oxide film or a laminated film of a silicon oxide film and a silicon nitride film is formed as a base layer 3 on the patterned light shielding film 2.
Step (d)
An amorphous silicon film is formed on the base layer 3. At this time, for the purpose of controlling the threshold gate voltage V _th (x), the impurity concentration of the first conductivity type in the crystalline silicon film of the first conductivity type constituting the channel region is set to a desired value. A p-type impurity such as boron or an n-type impurity such as phosphorus can be mixed during the formation of the amorphous silicon film. Alternatively, the first conductivity type impurity may be introduced to the entire surface of the amorphous silicon film by ion doping or ion implantation after film formation.

  Next, the amorphous silicon film is irradiated with an excimer laser or the like to be crystallized to form a crystalline silicon film having excellent characteristics.

  In this step (d), a crystalline silicon film may be formed by a plasma CVD method or a sputtering method, giving priority to the uniformity of the film thickness, in addition to the crystallization method by irradiation with the excimer laser or the like.

When selecting a form for forming a polycrystalline silicon film as the crystalline silicon film, the amorphous silicon film is irradiated with an excimer laser to crystallize to form a polycrystalline silicon film having excellent characteristics. be able to. Further, when selecting a form for forming a polycrystalline silicon film as the crystalline silicon film, a polycrystalline silicon film can be formed by applying a plasma CVD method or a sputtering method.
Step (e)
Next, the crystalline silicon film is patterned into a desired shape by lithography and dry etching. A natural oxide film is formed on the surface of the patterned crystalline silicon film 4. Before forming the gate insulating film, cleaning is performed with dilute hydrofluoric acid or the like for the purpose of removing the natural oxide film present on the surface of the crystalline silicon film. The patterned crystalline silicon film 4 that has been subjected to the removal process of the natural oxide film and exposed a clean silicon surface is used in the next step.
Step (f)
A gate insulating film 5 is formed so as to cover the patterned crystalline silicon film 4 and the underlying layer 3. The gate insulating film 5 is a silicon oxide film or a laminate of a silicon oxide film and a silicon nitride film. At this time, the interface between the patterned crystalline silicon film 4 and the gate insulating film 5 is crystalline silicon film / silicon. It is considered as an interface with the oxide film.

  The gate insulating film 5 is formed by a plasma CVD method. The temperature at the time of film formation is selected to be lower than the temperature at which the insulating transparent substrate 1 is deformed by heat, for example, in the range of 600 ° C. or less.

The thickness of the gate insulating film 5 is not particularly limited as long as a desired gate breakdown voltage can be obtained and the target threshold gate voltage V _th (x) can be achieved. At least when the gate breakdown voltage is 10 V or more, the thickness of the gate insulating film 5 is preferably selected from a range of 5 nm to 5000 nm, for example, and more preferably selected from a range of 10 nm to 1000 nm.

Note that the thickness of the gate insulating film 5 is such that the concentration in the desired depth direction from the upper surface of the gate insulating film 5 in the step of introducing a high concentration impurity by ion implantation, which will be described later, and the step of introducing a low concentration impurity. The distribution is selected so that ion implantation is possible.
Step (g)
Next, a gate electrode film 6 is formed on the gate insulating film 5.

The work function of the crystalline silicon film of the first conductivity type, which depends on the impurity concentration of the first conductivity type in the crystalline silicon film of the first conductivity type used as the channel region, The material of the gate electrode film is selected so that the work function of the gate electrode film 6 has a desired value with respect to the work function and the film thickness. As a material of the gate electrode film 6,
That is, as the material of the gate electrode film 6, a metal material having a desired work function or silicon (polycrystalline silicon) to which an impurity of the second conductivity type is added at a desired concentration can be used. That is, a metal gate having a desired work function or a poly-Si gate having a desired work function can be adopted as the gate electrode. In addition, a stacked film of a film made of the above metal material and a silicon film to which an impurity of the second conductivity type is added can be used. For example, for the purpose of reducing the resistance of the gate electrode, a metal material having a desired work function, or a lower layer film made of silicon (polycrystalline silicon) to which an impurity of the second conductivity type is added at a desired concentration, An upper layer film made of a metal material having excellent electrical conductivity can also be laminated.

  Note that when a silicon film to which an impurity of the second conductivity type is added is adopted as the material of the gate electrode film 6, the second film is usually added to the silicon film to which the impurity of the second conductivity type is added. The concentration of the conductivity type impurity is selected to be high. When the crystalline silicon film of the first conductivity type is a p-type crystalline silicon film, an n-type impurity such as phosphorus is selected as the second conductivity type impurity. When the crystalline silicon film of the first conductivity type is an n-type crystalline silicon film, a p-type impurity such as boron is selected as the second conductivity type impurity. In addition, a plurality of types of second conductivity type impurities may be added as the second conductivity type impurity. At that time, the concentration of the second conductivity type impurity added to the silicon film to which the second conductivity type impurity is added is the type of the second conductivity type impurity to be used, and the target. The selection is made according to the electric conductivity of the gate electrode film 6.

  A metal film by sputtering or a silicon film to which an impurity of the second conductivity type is added is formed on the gate insulating film 5 with a predetermined film thickness by CVD or the like.

  A photoresist pattern is formed on the gate electrode film by lithography, and the gate electrode film is etched using a dry etching method, a wet etching method, or a combination of both methods to form a gate electrode having a desired gate length. Make it.

  In the patterning of the gate electrode film, alignment is performed so that the gate electrode having a desired gate length is positioned above the gap portion provided between the two divided regions in the patterned light-shielding film 2. . Specifically, the alignment is performed so that the ends of the two divided regions of the patterned light-shielding film 2 have a symmetrical arrangement with respect to the center of the gate electrode having a desired gate length. .

The fabricated gate electrode film 6 is used as an ion implantation mask in a step of ion implantation of a second conductivity type impurity described later at a low concentration. Accordingly, the thickness of the gate electrode film 6 to be manufactured is selected to a thickness necessary for the function as the ion implantation mask. For example, when the gate electrode film 6 is a metal gate, the thickness of the gate electrode film 6 can be selected in the range of 50 nm to 1000 nm.
Step (h)
A second conductivity type impurity is ion-implanted from the upper surface of the patterned crystalline silicon film 4 through the gate insulating film 5 to form a high concentration impurity doped region and a low concentration impurity doped region.

  At that time, a high concentration impurity doped region used as a source region and a drain region is formed first, and then a low concentration impurity doped region used as an LDD region is formed. Specifically, after the second conductivity type impurity is ion-implanted at a low concentration into the portion corresponding to the source region and the drain region, the second region is added to the portion corresponding to the source region, the drain region, and the LDD region. By ion-implanting the conductive impurity at a low concentration, a high concentration impurity doped region used as a source region and a drain region and a low concentration impurity doped region used as an LDD region are formed.

  In some cases, after the second conductivity type impurity is ion-implanted at a low concentration into the source region, the drain region, and the portion corresponding to the LDD region, the second conductivity type is injected into the portion corresponding to the source region and the drain region. By ion-implanting the type impurity at a low concentration, a high concentration impurity doped region used as a source region and a drain region and a low concentration impurity doped region used as an LDD region can be formed.

  That is, prior to the ion implantation step, a gate electrode is manufactured, and when performing ion implantation of the second conductivity type impurity at a low concentration, the gate electrode functions as a mask. For this reason, ion implantation of the second conductivity type impurity does not occur in the region immediately below the gate electrode, so that low-concentration impurity doped regions used as LDD regions are formed on both sides of the gate electrode in a self-aligned manner.

  First, a resist is applied to the entire surface, and a resist pattern having openings corresponding to the source region and the drain region is formed. Using this resist pattern as a mask, the second conductivity type impurity is ion-implanted at a high concentration. Therefore, the second conductivity type impurity is ion-implanted at a high concentration only in the openings corresponding to the source region and the drain region. Thereafter, the resist pattern is peeled off, and then the second conductivity type impurity is ion-implanted at a low concentration using the gate electrode film 6 as a mask. As a result, the openings corresponding to the source region and the drain region have been subjected to the high concentration ion implantation of the second conductivity type impurity and the low concentration ion implantation of the second conductivity type impurity. The total concentration distribution of the second conductivity type impurities is obtained by superimposing both concentration distributions. On the other hand, only the low-concentration ion implantation of the second conductivity type impurity is performed on the region directly under the gate electrode and the remaining region excluding the opening. As a result, regions where the second conductivity type impurities are ion-implanted at a low concentration are formed between both sides of the gate electrode film 6, the source region, and the drain region.

In the high-concentration ion implantation step of the second conductivity type impurity, phosphorus is selected when the second conductivity type impurity is an n-type impurity, and boron is selected when the second conductivity type impurity is a p-type impurity. The ion implantation conditions are, for example,
The gate insulating film 5 is a silicon oxide film having a thickness of 100 nm.
When the film thickness of the patterned crystalline silicon film 4 is 50 nm,
Utilizing B ⁺ ions generated by RF-plasma ionization of B ₂ H ₆ or P ⁺ ions generated by RF-plasma ionization of PH ₃ ,
The RF power used for the RF-plasma ionization is 100 W,
The accelerating voltage can be selected to be 25 keV and the set dose is 6.7 × 10 ¹⁵ cm ⁻² .

In the low-concentration ion implantation step of the second conductivity type impurity, phosphorus is selected when the second conductivity type impurity is an n-type impurity, and boron is selected when the second conductivity type impurity is a p-type impurity. The ion implantation conditions are, for example,
The gate insulating film 5 is a silicon oxide film having a thickness of 100 nm.
When the film thickness of the patterned crystalline silicon film 4 is 50 nm,
Utilizing B ⁺ ions generated by RF-plasma ionization of B ₂ H ₆ or P ⁺ ions generated by RF-plasma ionization of PH ₃ ,
The RF power used for the RF-plasma ionization is 100 W,
The acceleration voltage can be selected to be 30 keV and the set dose amount is 2.5 × 10 ¹³ cm ⁻² .

Under the above conditions, if the LDD region has p-type conductivity with an average carrier concentration p = 3 × 10 ¹⁷ cm ⁻³ , the drain region and the source region have an average carrier concentration p = 8 × 10 ^19. It is estimated that the p ⁺ type conductivity is about cm ⁻³ .
Step (i)
Next, the first interlayer insulating film 10 is formed.

  The first interlayer insulating film 10 is formed by forming a silicon oxide film, a silicon nitride film, or a laminated film thereof using a plasma CVD method or the like.

The first interlayer insulating film 10 insulates and separates the gate line 5 that supplies the gate voltage Vg applied to the gate electrode film 6 and the drain line 14 that supplies the drain bias V _D applied to the drain electrode. Yes. Therefore, in addition to the withstand voltage between the gate line 5 and the drain line 14, the wiring capacitance (C _gate-drain ) between the gate line 5 and the drain line 14 is also taken into consideration and the first interlayer insulating film 10. The film thickness is selected.

The temperature at which the first interlayer insulating film 10 is formed is selected to be lower than the temperature at which the insulating transparent substrate 1 is deformed by heat, for example, in the range of 600 ° C. or lower.
Step (j)
Next, activation heat treatment is performed in order to activate the second conductivity type impurities implanted in the high concentration impurity doped region and the low concentration impurity doped region.

  The temperature of the activation heat treatment is selected to be lower than the temperature at which the insulating transparent substrate 1 is deformed by heat, for example, in the range of 600 ° C. or less. Therefore, the temperature of the activation heat treatment is selected in the range of 300 ° C. or more and 600 ° C. or less, for example.

The activation heat treatment may be performed in an electric furnace or a rapid thermal annealing method such as an excimer laser.
Step (k)
After completing the activation heat treatment, contact holes 11 for forming a source electrode film and a drain electrode film that are in electrical contact with the source region and the drain region are formed.

A resist pattern having an opening corresponding to a part of the source region and the drain region is formed on the first interlayer insulating film 10, and dry etching, wet etching, or both of them are used together to form a first pattern of the opening. The first interlayer insulating film 10 and the gate insulating film 5 are etched to form contact holes 11.
Step (l)
After the contact hole 11 is formed, a metal film such as aluminum is formed by sputtering or the like. The metal film is patterned by various lithography and etching to form wirings for the source electrode film 12, the drain electrode film 12, and the drain line.

  In the TFT used for the active matrix driving device of the liquid crystal display device shown in FIG. 1, the first interlayer insulating film 10 and the drain line 14 are covered as shown in the cross-sectional structure shown in FIG. 3. A second interlayer insulating film 15 is produced and its upper surface is flattened.

  A pixel electrode film that is electrically connected to the source electrode film 12 through a contact hole provided in the second interlayer insulating film 15 is formed. The pixel electrode film formed on the upper surface of the second interlayer insulating film 15 is patterned to produce the pixel electrode 13.

  Note that when dangling bonds exist on the surface of the crystalline silicon film, the dangling bonds existing at the interface between the crystalline silicon film and the gate insulating film function as interface states. It is preferable to terminate dangling bonds on the surface of the crystalline silicon film to reduce the density of the interface states. Hydrogen can be exemplified as an element used for terminating dangling bonds on the surface of the crystalline silicon film. As a dangling bond termination treatment for hydrogen, hydrogen plasma treatment can be applied. A dangling bond termination process on the surface of the crystalline silicon film, such as a hydrogen plasma process, is performed prior to the formation of the gate insulating film after the patterning of the crystalline silicon film. For example, after patterning the crystalline silicon film, after removing the natural oxide film on the surface of the crystalline silicon film, a hydrogen plasma treatment is performed to form a gate insulating film.

  Through the steps described above, the TFT used for the active matrix driving device of the liquid crystal display device shown in FIG. 1 is manufactured, and the main steps for manufacturing the driving device portion of the liquid crystal display device are completed.

  7A to 7D, the gate electrode film 6 is formed in the step (g), and then the high concentration impurity doped region and the low concentration impurity doped region are formed in the step (h). Is taken as an example to describe the manufacturing process of the planar TFT shown in FIG. It is also possible to adopt a mode in which the high concentration impurity doped region is formed prior to the formation of the gate electrode film 6 and the low concentration impurity doped region is formed after the gate electrode film 6 is formed.

  In any form, after the gate electrode film 6 is formed, a low concentration impurity doped region is formed by performing low concentration ion implantation of the second conductivity type impurity using the gate electrode film 6 as a mask. The film thickness of the crystalline silicon film can be selected in the range of 15 to 100 nm, and the film thickness of the gate insulating film 5 can be selected from the range of 5 nm to 5000 nm, for example. For example, when the gate electrode film 6 is a metal gate, the thickness of the gate electrode film 6 can be selected in the range of 50 nm to 1000 nm. For example, even when the thickness of the crystalline silicon film is selected to be 100 nm, the thickness of the gate insulating film 5 is selected to be 5000 nm, and the thickness of the gate electrode film 6 is selected to be 50 nm, the gate electrode film 6 is used as a mask. The low-concentration impurity doped regions that reach the surface of the base layer can be formed on both sides of the gate electrode in a self-aligned manner.

  8A to 8D are process diagrams showing a manufacturing process of a conventional TFT (TFT-C) whose cross-sectional structure is shown in FIG. FIGS. 8A to 8D show the second interlayer insulating film 15 and the pixels formed on the second interlayer insulating film 15 in the conventional TFT (TFT-C) shown in FIG. A series of steps for producing the planar type TFT in the steps (a) to (n) excluding the step for producing the electrode 13 is shown.

  Note that in the steps disclosed in FIGS. 8A to 8D, a form in which a polycrystalline silicon film is employed as the crystalline silicon film can be selected.

In the conventional TFT (TFT-C) shown in FIG. 6, an electrode film for fixing the potential of the light shielding film 2 is formed. Therefore, the following two steps shown in FIG. 8-2 are provided.
Step (f) Formation of resist pattern for forming contact hole 11 and underlayer etching step;
Step (g) Formation of an electrode film used for production of the electrode film 12 in direct contact with the light-shielding film 2, formation of a resist pattern, and electrode film etching step By providing the step (f) and the step (g) In advance, an electrode film 12 that is in direct contact with the light shielding film 2 is formed on the upper surface of the base layer 3. As a result, when the source electrode film and the drain electrode film are formed in steps (m) and (n) shown in FIG. It is set as the process of producing together.

  In step (m) shown in FIG. 8-4, the first interlayer insulating film 10 and the gate are formed in order to form contact holes 11 reaching the surfaces of the source region and the drain region from the upper surface of the first interlayer insulating film 10. The insulating film 5 is etched. Temporarily, in order to form a contact hole reaching the upper surface of the light shielding film 2 from the upper surface of the first interlayer insulating film 10, it is necessary to etch the first interlayer insulating film 10, the gate insulating film 5, and the base layer 3. is there.

  In order to etch the first interlayer insulating film 10, the gate insulating film 5, and the etching time required for etching the first interlayer insulating film 10 and the gate insulating film 5, The time required for etching the formation 3 becomes longer. Therefore, in the step (m), when a contact hole reaching the upper surface of the light shielding film 2 from the upper surface of the first interlayer insulating film 10 is formed, the surfaces of the source region and the drain region are formed from the upper surface of the first interlayer insulating film 10. The portion of the contact hole 11 that reaches is over-etched.

  By providing the step (f) and the step (g), it is necessary to avoid the over-etching. In particular, when the film thickness of the patterned crystalline silicon film is thin, unnecessary over-etching causes an increase in sheet resistance of the source region and the drain region.

  In addition, in order to form a contact hole reaching the upper surface of the light shielding film 2 from the upper surface of the first interlayer insulating film 10, the first interlayer insulating film 10, the gate insulating film 5, and the base layer 3 are reliably etched. As for the actual etching time, a process margin is added at a constant ratio to the required etching time to prevent insufficient etching. When the required etching time becomes long, the time to be added becomes long, and a situation occurs in which the surface of the light shielding film 2 is over-etched.

  By providing the step (f) and the step (g), a contact hole reaching the surface of the light shielding film 2 from the upper surface of the base layer 3 is formed, and thus the etching time required for this step is shortened. As a result, it is possible to greatly reduce the degree of over-etching even on the surface of the light shielding film 2.

  In the manufacturing process of the TFT whose sectional structure is shown in FIG. 4, compared with the manufacturing process of the conventional TFT (TFT-C) whose sectional structure is shown in FIG. 6, step (f) shown in FIG. And the two steps (g) are unnecessary. As a result, there is an effect of reducing the manufacturing cost. In addition, the reduction in the number of processes has an effect on improving the overall yield.

(Third embodiment)
As a third embodiment of the present invention, another example of the structure of the thin film transistor according to the first embodiment of the present invention and the thin film transistor according to the first embodiment of the present invention are used as an active matrix driving device for a liquid crystal display device. The form used for the above will be described in detail with reference to the drawings.

FIG. 9 is a top view of a TFT according to the third embodiment of the present invention. The structure shown in FIG. 9 employs a double gate structure in which two TFTs are connected in series between a drain region and a source region. In this double gate structure, since two TFTs are connected in series, the potential of the drain region (V _D1 ) and the potential of the source region (V _S1 ) are applied to the first TFT, respectively. The drain region potential (V _D2 ) and the source region potential (V _S2 ) are applied to the second TFT. The source region of the first TFT and the drain region of the second TFT are integrated, so the potential (V _S1 ) of the source region of the first TFT and the potential of the drain region of the second TFT. (V _D2 ) is equal (V _S1 = V _D2 ).

In a double gate TFT, the difference between the drain electrode voltage (V _D ) and the source electrode voltage (V _S ), (V _D −V _S ), is (V _D −V _S ) = (V _D1 − V _S1 ) + (V _D2 −V _S2 ). Since the difference between the entire drain electrode voltage (V _D ) and the source electrode voltage (V _S ), (V _D −V _S ) is divided into two TFTs, the source-drain of the first TFT breakdown voltage V _Breaks-down1 and the source of the second TFT of between - relative breakdown voltage V _{Breaks-down2 drain, V Breaks-down1> | V} D1 -V S1 |, V Breaks-down2> | V D2 -V _{In the} range of _S2 |, breakdown is avoided.

Therefore, the potential difference | V _D −V _S | between the source and drain is divided into two TFTs, and the voltage applied to one TFT is divided. It is used for applications that effectively increase the withstand voltage.

Further, (V _D −V _S ) is divided into two TFTs, and a drain-source bias difference V _DS applied to each TFT V _DS ; (V _D1 −V _S1 ), (V _D2 −V _S2 ) Therefore, the variation in TFT characteristics, particularly the threshold gate voltage (V _th ), which depends on the drain-source bias difference V _DS applied to the TFT is reduced. The effective threshold gate voltage (V _th ) is considered to be suppressed from variation.

  That is, FIG. 9 shows a TFT used for a “display device” that needs to have a high breakdown voltage between the source and drain and is required to suppress variation in an effective threshold value of “on / off operation”. A TFT having a double gate structure having the structure shown can be preferably used.

In the double-gate TFT having the structure shown in FIG. 9, the first TFT and the second TFT each have a patterned light-shielding film 2 on the drain side and the source side so as to sandwich the channel region. It is divided into areas. In addition, the drain side region and the source side region of the light shielding film 2 do not overlap with the channel region, but overlap with part of the LDD regions provided on both sides of the channel region. Therefore, similarly to the TFT shown in FIG. 1 described in the first embodiment of the present invention described above, the light leakage current is suppressed, and “shift amount of threshold gate voltage V _th (x): ΔV _th ( x) "is also substantially absent.

In the TFT having the double gate structure having the structure shown in FIG. 9, the third region provided in the region where the silicon film 4 is not formed in the light shielding film 2 is the gate electrode film 6 and the gate line formation region. It is arranged so as to partially overlap. In that portion, a MIM structure (capacitor C _{GI (D / S)} ) of light shielding film 2 / (underlayer 3 + gate insulating film 5) / gate electrode film 6 (gate line) is formed. Therefore, in the “off state”, the MIM structure (capacitor C _GI ) is applied to the potential (V _BD (t)) of the drain side region of the light shielding film and the potential (V _BS (t)) of the source side region of the light shielding film. _{(D / S)} ), the potential (Vg (OFF)) of the gate electrode film 6 also has an influence.

Even in a TFT having a double gate structure, it is desirable to select a structure in which the potential (Vg) of the gate electrode film 6 and the gate line does not substantially affect the potential of the patterned light shielding film 2. For example, when the MIM structure (capacitor _{CGI (D / S)} ) of the light shielding film 2 / (underlayer 3 + gate insulating film 5) / gate electrode film 6 (gate line) is configured, the MIM structure (capacitor C _{GI (D / S)} ) capacitor capacity is made sufficiently small so that the potential (Vg) of the gate electrode film 6 and the gate line does not substantially affect the potential of the light shielding film 2. It can be.

Furthermore, even in the case of adopting a triple gate structure in which three TFTs are arranged in series between the source and drain, the patterned light-shielding film 2 for each TFT has a drain so as to sandwich the channel region. The same effect is exhibited by using a structure that is divided into a source region and a source region. That is, in each TFT, the drain side region and the source side region of the light shielding film 2 do not overlap with the channel region, but overlap with part of the LDD region provided on both sides of the channel region. The light leakage current is suppressed, and the “shift amount of the threshold gate voltage V _th (x): ΔV _th (x)” is substantially _eliminated .

  The fifth aspect of the present invention corresponds to the invention of the method for using the thin film transistor according to the first aspect or the second aspect of the present invention. Specifically, it is an invention of a display device that is driven using the thin film transistor according to the first embodiment or the second embodiment of the present invention. One aspect of the fifth aspect of the present invention is an invention of a liquid crystal display device driven by using the thin film transistor according to the first aspect or the second aspect of the present invention.

  As described above, the thin film transistor according to the first embodiment or the second embodiment of the present invention is a top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate. When used in a situation where light is irradiated from the substrate side, the technical significance of providing the light shielding plate is exhibited. Accordingly, the liquid crystal display device according to the fifth aspect of the present invention adopts a method in which the backlight light for liquid crystal display is incident from the insulating transparent substrate side so as to correspond to the operation state. .

(Fourth embodiment)
As a specific example of the display device according to the fifth aspect of the present invention, in particular, the liquid crystal display device which is one embodiment of the display device, the backlight type liquid crystal display device shown in FIG. To do.

  FIG. 10 is a conceptual exploded perspective view showing a general configuration of a backlight type liquid crystal display device. The backlight type liquid crystal display device 29 includes a liquid crystal panel 28 and a backlight unit 21. The backlight unit 21 includes a continuous light source with high luminance such as a cold cathode fluorescent lamp or a light emitting diode as the light source. The liquid crystal panel 28 includes an active matrix substrate 22 and a counter substrate 27 as a pair of transparent substrates that sandwich the liquid crystal layer 26. In the configuration shown in FIG. 10, the backlight light supplied from the backlight unit 21 enters from the active matrix substrate 22 side and is emitted from the counter substrate 27 side. A polarizing plate (not shown) or the like is provided on each of the incident surface and the exit surface of the liquid crystal panel 28. In the case of a color display liquid crystal display device, a color filter is provided on the counter substrate 27 serving as an emission surface of the liquid crystal panel 28. A common electrode (not shown) is formed on the counter substrate 27. On the active matrix substrate 22, a data circuit 24 and a scanning circuit 23 used for writing each pixel 25 are formed. A data line and a scanning line are connected to the data circuit 24 and the scanning circuit 23, respectively. The display area of the liquid crystal panel 28 includes pixel units formed on the active matrix substrate 22. Each pixel unit is partitioned by a data line and a scanning line, and each pixel unit is provided with the thin film transistor according to the first embodiment of the present invention. Each pixel unit supplies a voltage to be applied to the pixel electrode 13 through the TFT. Writing to each pixel 25 is performed by an on / off operation of the TFT.

  The active matrix substrate 22 corresponds to a transparent substrate on the incident surface side of the liquid crystal panel 28. Therefore, an insulating transparent substrate is used as the transparent substrate 1.

  When a light source having high luminance is used as the backlight unit 21, a large amount of light is continuously irradiated from the insulating transparent substrate 1 side to the thin film transistor used for writing pixels. In the thin film transistor according to the first embodiment of the present invention, the structure of the light shielding plate described above is adopted, so that light leakage current is generated even in a situation where a large amount of light is irradiated from the insulating transparent substrate 1 side. Is effectively suppressed. Therefore, the backlight type liquid crystal display device exhibits good display characteristics.

  In addition, even when the pixel writing cycle is short, that is, when the thin film transistor on / off operation cycle is short, the influence of the potential of the divided light shielding plate on the operation characteristics of the thin film transistor is substantially suppressed. . The backlight type liquid crystal display device of the third embodiment is suitable for applications in which the pixel writing cycle is short, for example, for displaying moving images.

  For example, if the “light leakage current” occurs while the driving TFT shown in FIG. 1 is in the “off state”, for example, one charge (Q) accumulated between the pixel electrode 13 and the common electrode. The part is discharged. As a result, when the potential difference between the pixel electrode 13 and the common electrode is reduced, the electric field in the liquid crystal layer is reduced, causing a display defect.

  In the thin film transistor according to the first embodiment or the second embodiment of the present invention, generation of light leakage current is effectively suppressed even in a situation where a large amount of light is irradiated from the insulating transparent substrate side. Therefore, by using the thin film transistor according to the first embodiment or the second embodiment of the present invention for an active matrix driving device of a liquid crystal display device, it is possible to suppress the occurrence of display defects due to the occurrence of light leakage current. .

In the thin film transistor according to the first embodiment or the second embodiment of the present invention, generation of light leakage current is effectively suppressed even in a situation where a large amount of light is irradiated from the insulating transparent substrate side. However, as described above, unlike the structure in which the light shielding plate is provided so as to cover the entire crystalline silicon film, a slight light leakage current is generated in the “off state”. Therefore, when the pixel writing cycle is long, a part of the charge (Q) accumulated between the pixel electrode 13 and the common electrode is a total amount (I) of the light leakage current generated during the cycle (τ). discharged by _photoleak · τ). As a result, the potential of the pixel electrode 13 decreases from the initial potential V ₀ to V ₀ · (1− (I _photoleak · τ) / Q) during the period (τ). When the pixel writing cycle (τ) is short, the rate of decrease in the potential of the pixel electrode 13: (I _photoleak · τ) / Q is small, so that the pixel writing cycle is short, for example, a moving image is displayed. This is suitable for the backlight type liquid crystal display device of the third embodiment.

  Although the liquid crystal display device according to the fifth embodiment of the present invention has been described above with respect to the embodiment of the backlight type liquid crystal display device 29 that combines the liquid crystal panel 28 and the backlight unit 21 of the surface light source, The liquid crystal display device according to the third aspect of the invention is not limited to this embodiment. For example, as in the case of a liquid crystal projector type liquid crystal display device, an embodiment in which a point light source type high-intensity light source unit is used instead of a surface light source backlight unit as a backlight light source is also included.

  The thin film transistor according to the first aspect of the present invention or the second aspect of the present invention is in a state in which the period of on / off operation is short in a situation where light is continuously irradiated with a large amount of light from the insulating transparent substrate side. The effect is remarkably exhibited. Accordingly, in addition to the backlight type liquid crystal display device, a display device that uses TFTs with a short cycle of on / off operation in a situation where a large amount of light is continuously irradiated from the insulating transparent substrate side. However, the thin film transistor according to the first aspect of the present invention can be preferably used. For example, in an organic electroluminescence display device used for applications where the pixel writing cycle is short, for example, for displaying moving images, a situation where a large amount of external light is continuously irradiated from the insulating transparent substrate side The thin film transistor according to the first embodiment of the present invention may be used as a driving device in contrast to the configuration used in FIG.

  The sixth aspect of the present invention also corresponds to the invention of the method for using the thin film transistor according to the first aspect or the second aspect of the present invention. Specifically, in an electronic device that employs a liquid crystal display device as a display mechanism, the liquid crystal display according to the fifth embodiment of the present invention described above is used as a display mechanism that is an essential component of the electronic device. This is a form of using an apparatus. At that time, the liquid crystal display device according to the fifth embodiment of the present invention described above employs the thin film transistor according to the first embodiment or the second embodiment of the present invention as a thin film transistor used for driving the liquid crystal display device. Yes.

  The thin film transistor according to the first embodiment or the second embodiment of the present invention is a top-gate crystalline silicon thin film transistor formed on an insulating transparent substrate, and receives light irradiation from the insulating transparent substrate side. When used in a situation, the technical significance of providing the light shielding plate is exhibited. Therefore, the liquid crystal display device adopts a method in which the backlight for liquid crystal display is incident from the insulating transparent substrate side so as to correspond to the operation state.

(Fifth embodiment)
As a specific example of the electronic device according to the sixth embodiment of the present invention, a mobile phone provided with a liquid crystal display device will be described as an example, and an embodiment thereof will be described.

  FIG. 11 is a perspective view of a mobile phone including a backlight type liquid crystal display device. The casing 30 of the mobile phone 31 is composed of an upper casing and a lower casing. The upper housing is provided with a backlight type liquid crystal display device 29, and the lower housing is provided with a numeric keypad. The liquid crystal display device for mobile phones is a liquid crystal display device with excellent visibility without depending on the surrounding lighting conditions, such as the situation without external lighting or the situation where it is irradiated with outdoor direct sunlight. It is desirable. Therefore, it is desirable to use a light source having high luminance as the backlight unit. In that case, a large amount of light is continuously irradiated from the insulating transparent substrate side to the thin film transistor used for writing the pixel. Since the thin film transistor according to the first embodiment of the present invention adopts the structure of the light shielding plate described above, even in a situation where a large amount of light is irradiated from the insulating transparent substrate side, a light leakage current is generated. It is effectively suppressed. Therefore, the backlight-type liquid crystal display device can provide a mobile phone with excellent display characteristics and excellent visibility.

  The electronic device according to the sixth aspect of the present invention is not limited to the embodiment of the mobile phone provided with the backlight type liquid crystal display device. For example, various embodiments such as a personal computer, a PDA (Personal Digital Assistance), a viewfinder, a digital (video) camera equipped with a liquid crystal display monitor, and a liquid crystal projector using a backlight type liquid crystal display device However, the same effect is exhibited.

  In addition, even when the pixel writing cycle is short, that is, when the thin film transistor on / off operation cycle is short, the influence of the potential of the divided light shielding plate on the operation characteristics of the thin film transistor is substantially suppressed. . For applications where the pixel writing cycle is short, for example, for the purpose of displaying moving images, the present invention is suitable for electronic devices using a backlight type liquid crystal display device. Specifically, mobile phones, personal computers, PDAs (Personal Digital Assistance), viewfinders, digital (video) cameras equipped with a liquid crystal display monitor, liquid crystal projectors, etc. It is suitable for the embodiment.

The thin film transistor according to the present invention can be used as a driving transistor of a liquid crystal display device that is used under the condition that light is irradiated from the insulating transparent substrate side to the crystalline silicon film of the thin film transistor. In particular, it can be used as a driving transistor for a liquid crystal display device in which the backlight unit is disposed on the insulating transparent substrate side.

(Appendix 1)
A top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate,
The thin film transistor
An insulating transparent substrate;
A patterned light-shielding film formed on the upper surface of the insulating transparent substrate;
A base layer made of a light-transmitting insulating material, formed to cover the upper surface of the patterned light-shielding film and the insulating transparent substrate;
A patterned crystalline silicon film formed on the upper surface of the underlayer;
A gate insulating film formed so as to cover the patterned crystalline silicon film and the upper surface of the base layer;
Comprising a patterned gate electrode film formed on an upper surface of the gate insulating film;
A gate electrode comprising the patterned gate electrode film;
The gate insulating film;
A channel region composed of a region of the first conductivity type immediately below the gate electrode of the patterned crystalline silicon film in contact with the gate insulating film;
A drain region formed of a high-concentration impurity-doped region of the second conductivity type formed in the patterned crystalline silicon film;
A source region formed of a high-concentration impurity doped region of the second conductivity type formed in the patterned crystalline silicon film;
An LDD region formed of a lightly doped impurity region of a second conductivity type formed on the surface side of the patterned crystalline silicon film in contact with the gate insulating film on both sides of the channel region;
A drain electrode and a source electrode, which are formed of electrode films so as to be electrically connected to the drain region and the source region, respectively,
Constitutes a field effect transistor;
In the on state of the field effect transistor,
By applying a gate voltage exceeding the threshold voltage to the gate electrode, a channel is formed at the interface between the gate insulating film and the channel region immediately below the gate electrode,
A carrier flow path is formed between the drain region and the source region via the channel and the LDD regions on both sides thereof;
The patterned light-shielding film is
Made of light impermeable conductive material,
Surrounded by an insulative transparent substrate and an underlayer and electrically isolated;
The patterned light shielding film does not exist immediately below the channel region,
At least, the formation region of the patterned light shielding film overlaps with a part of the region immediately below the drain region and a part of the region immediately below the source region, respectively.
For each of the LDD regions provided on both sides of the channel region, a part of the region immediately below the LDD region and the formation region of the patterned light-shielding film are arranged to overlap each other. Thin film transistor.

(Appendix 2)
A top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate,
The thin film transistor
An insulating transparent substrate;
A patterned light-shielding film formed on the upper surface of the insulating transparent substrate;
A base layer made of a light-transmitting insulating material, formed to cover the upper surface of the patterned light-shielding film and the insulating transparent substrate;
A patterned crystalline silicon film formed on the upper surface of the underlayer;
A gate insulating film formed so as to cover the patterned crystalline silicon film and the upper surface of the base layer;
Comprising a patterned gate electrode film formed on an upper surface of the gate insulating film;
A gate electrode having a gate length L _gate composed of the patterned gate electrode film;
The gate insulating film;
A channel region having a length L equal to the gate length L _gate , comprising a region of the first conductivity type immediately below the gate electrode of the gate length L _gate of the patterned crystalline silicon film in contact with the gate insulating film;
A drain region having a length L _D and a source region having a length L _{S made} of a heavily doped impurity region of a second conductivity type formed on a patterned crystalline silicon film on both sides of the gate electrode;
A long region comprising a lightly doped region of the second conductivity type formed between the channel region, the drain region and the source region on the surface side of the patterned crystalline silicon film in contact with the gate insulating film. A drain-side LDD region of length d and a source-side LDD region of length d;
A drain electrode and a source electrode, which are formed of electrode films so as to be electrically connected to the drain region and the source region, respectively,
Constitutes a field effect transistor;
In the on state of the field effect transistor,
By applying a gate voltage exceeding the threshold voltage to the gate electrode, a channel is formed at the interface between the gate insulating film and the channel region immediately below the gate electrode,
Between the drain region and the source region, a drain region, a drain side LDD region, a channel, a source side LDD region, and a carrier flow path passing through the source region are formed;
The patterned light-shielding film is
Made of light impermeable conductive material,
Surrounded by an insulative transparent substrate and an underlayer and electrically isolated;
The patterned light-shielding film is
It has two parts divided into a drain side region and a source side region across the channel region,
The patterned light-shielding film does not exist immediately below the channel region having the length L,
A gap having an interval x equal to or longer than the length L of the channel region is provided between the drain side region and the source side region of the divided light shielding film,
The region on the drain side of the divided light shielding film is disposed so as to overlap at least a part of the drain side LDD region having a length d and a part of the drain region,
A thin film transistor, wherein a source-side region of the divided light-shielding film is disposed so as to overlap at least a part of a source-side LDD region having a length d and a part of the source region.

(Appendix 3)
For the length L of the channel region, the length d of the drain side LDD region, and the length d of the source side LDD region,
The gap x provided between the drain side region of the light shielding film and the source side region of the light shielding film, which is divided across the channel region, is selected so as to satisfy the following formula (1). ing:
L + 2d ≧ x ≧ L Formula (1)
3. The thin film transistor according to appendix 2, wherein:

(Appendix 4)
The region on the drain side of the light shielding film and the region on the source side of the light shielding film, which are divided across the channel region,
The end on the gate electrode side of the drain side region of the light shielding film and the end on the gate electrode side of the source side region of the light shielding film are:
4. The thin film transistor according to appendix 2 or 3, wherein the thin film transistor is disposed so as to be symmetrical with respect to the gate electrode.

(Appendix 5)
The patterned light-shielding film is
Having a third region not located directly under the patterned crystalline silicon film;
The region on the drain side of the light shielding film and the region on the source side of the light shielding film, which are divided across the channel region, are electrically connected via the third region of the light shielding film. The thin film transistor according to any one of Supplementary notes 1 to 4, which is characterized in that the thin film transistor.

(Appendix 6)
The high-concentration impurity doped region of the second conductivity type reaches the upper surface of the underlayer,
6. The thin film transistor according to any one of appendices 1 to 5, wherein the lightly doped impurity doped region of the second conductivity type also reaches the upper surface of the underlayer.

(Appendix 7)
The top gate type field effect transistor is:
The thin film transistor according to any one of appendices 1 to 6, further comprising an interlayer insulating film formed so as to cover an upper surface of the gate electrode and the gate insulating film.

(Appendix 8)
The first conductivity type is a conductivity type using holes as carriers,
The second conductivity type is a conductivity type using electrons as carriers,
The thin film transistor according to any one of appendices 1 to 7, wherein the top gate type field effect transistor configured is an N-channel type field effect transistor.

(Appendix 9)
The first conductivity type is a conductivity type using electrons as carriers,
The second conductivity type is a conductivity type using holes as carriers,
The thin film transistor according to any one of appendices 1 to 7, wherein the top gate type field effect transistor configured is a P-channel type field effect transistor.

(Appendix 10)
A method of manufacturing the thin film transistor according to Supplementary Note 1 on an insulating transparent substrate,
The method of manufacturing the thin film transistor includes
Forming a film made of the light impermeable conductive material on the upper surface of the insulating transparent substrate (1);
Patterning a film made of the light-impermeable conductive material to form the patterned light-shielding film on the upper surface of the insulating transparent substrate (2);
(3) forming a base layer by forming a film made of a light-transmitting insulating material so as to cover the patterned light-shielding film and the upper surface of the insulating transparent substrate;
Forming an amorphous silicon film on the upper surface of the underlayer (4);
A step (5) of forming a first conductive type crystalline silicon film by heat-treating the amorphous silicon film formed on the upper surface of the underlayer by irradiation with an excimer laser or the like;
Patterning the first conductive type crystalline silicon film to form the patterned first conductive type crystalline silicon film on the upper surface of the underlayer (6);
Forming the gate insulating film so as to cover the patterned crystalline silicon film and the upper surface of the underlayer (7);
Forming a gate electrode film on the upper surface of the gate insulating film (8);
Patterning the gate electrode film to form the patterned gate electrode film on the upper surface of the gate insulating film (9);
A second conductivity type high-concentration impurity doped region for a drain region, which is formed by implanting an impurity imparting second conductivity at a high concentration into the patterned crystalline silicon film of the first conductivity type. And a step (10) of producing a second conductivity type heavily doped region for the source region;
A low-concentration impurity of the second conductivity type formed by implanting an impurity imparting the second conductivity into the patterned crystalline silicon film of the first conductivity type at a low concentration on both sides of the gate electrode. Producing a doped region (11);
The second conductivity type heavily doped impurity doped region and the second conductivity type lightly doped impurity doped region are each subjected to an activation heat treatment for the impurity imparting the second conductivity that has been implanted. The drain region and the source region are formed from the high concentration impurity doped region of the second conductivity type, and the LDD regions are respectively formed on both sides of the gate electrode from the low concentration impurity doped region of the second conductivity type. Performing step (12);
An opening for forming an electrode is provided in the gate insulating film covering the upper surfaces of the drain region and the source region, and an electrode film is formed in the opening so as to be electrically connected to the upper surface of the drain region and the source region, respectively. And (13) producing the drain electrode and the source electrode;
Comprising at least the steps (1) to (13);
The length of the patterned gate electrode film formed in step (9) is selected equal to the gate length of the gate electrode;
A region immediately below the gate electrode having a gate length in the patterned crystalline silicon film of the first conductivity type in contact with the gate insulating film is a channel region having a length equal to the gate length;
The lengths of the second conductivity type heavily doped regions doped in the step (10) are selected to be equal to the drain region length L _D and the source region length L _S , respectively;
The lengths of the second conductivity type lightly doped regions doped between the gate electrode and the drain region and between the gate electrode and the source region in the step (11) are respectively on the drain side. Selected to be equal to the length d of the LDD region and the length d of the source side LDD region;
The pattern shape of the patterned light shielding film formed in step (2) is as follows:
The patterned light shielding film does not exist immediately below the channel region,
At least, the formation region of the patterned light shielding film overlaps with a part of the region immediately below the drain region and a part of the region immediately below the source region, respectively.
For each of the LDD regions provided on both sides of the channel region, a part of the region immediately below the LDD region overlaps with the formation region of the patterned light shielding film,
A pattern shape is selected, which has a gap of an interval x greater than or equal to the length of the channel region,
The patterned gate electrode film formed in the step (9) is
For the pattern shape of the patterned light shielding film formed in the step (2),
Select the arrangement position of the patterned gate electrode film on the upper part of the gap x that is longer than the length of the channel region,
The arrangement position of the patterned gate electrode film is as follows:
A distance of length d is provided between a side end of the patterned gate electrode film on the drain region side and a side end of the drain region on the gate electrode film side,
A distance d is provided between a side end of the patterned gate electrode film on the source region side and a side end of the source region on the gate electrode film side.
A method of manufacturing a thin film transistor, comprising positioning an arrangement position of the patterned gate electrode film.

(Appendix 11)
A method of manufacturing the thin film transistor according to Appendix 2, on an insulating transparent substrate,
The method of manufacturing the thin film transistor includes
Forming a film made of the light impermeable conductive material on the upper surface of the insulating transparent substrate (1);
Patterning a film made of the light-impermeable conductive material to form the patterned light-shielding film on the upper surface of the insulating transparent substrate (2);
(3) forming a base layer by forming a film made of a light-transmitting insulating material so as to cover the patterned light-shielding film and the upper surface of the insulating transparent substrate;
Forming an amorphous silicon film on the upper surface of the underlayer (4);
A step (5) of forming a first conductive type crystalline silicon film by heat-treating the amorphous silicon film formed on the upper surface of the underlayer by irradiation with an excimer laser or the like;
Patterning the first conductive type crystalline silicon film to form the patterned first conductive type crystalline silicon film on the upper surface of the underlayer (6);
Forming the gate insulating film so as to cover the patterned crystalline silicon film and the upper surface of the underlayer (7);
Forming a gate electrode film on the upper surface of the gate insulating film (8);
Patterning the gate electrode film to form the patterned gate electrode film on the upper surface of the gate insulating film (9);
High conductivity impurity doping of the second conductivity type, which is formed by implanting a high concentration of impurities imparting second conductivity into the patterned first crystalline silicon film on both sides of the gate electrode. Producing a region (10);
A second conductivity is imparted to the patterned crystalline silicon film of the first conductivity type on both sides of the gate electrode, between the gate electrode and the high impurity concentration doped region of the second conductivity type. A step (11) of producing a low-concentration impurity-doped region of the second conductivity type, in which an impurity to be implanted is implanted at a low concentration;
The second conductivity type heavily doped impurity doped region and the second conductivity type lightly doped impurity doped region are each subjected to an activation heat treatment for the impurity imparting the second conductivity that has been implanted. Forming the drain region and the source region from the high conductivity impurity doped region of the second conductivity type, and forming the drain side LDD region and the source side LDD region from the low conductivity impurity doped region of the second conductivity type ( 12);
An opening for forming an electrode is provided in the gate insulating film covering the upper surfaces of the drain region and the source region, and an electrode film is formed in the opening so as to be electrically connected to the upper surface of the drain region and the source region, respectively. And (13) producing the drain electrode and the source electrode;
Comprising at least the steps (1) to (13);
The length of the patterned gate electrode film formed in step (9) is selected equal to the gate length L _gate of the gate electrode;
The region immediately below the gate electrode having the gate length L _gate of the patterned crystalline silicon film of the first conductivity type in contact with the gate insulating film is a channel region having a length L equal to the gate length L _gate ;
The lengths of the high-concentration impurity doped regions of the second conductivity type prepared on both sides of the gate electrode in the step (10) are the length L _D of the drain region and the length L _{S of the} source region, respectively. Selected equally;
The lengths of the low-concentration impurity doped regions of the second conductivity type prepared on both sides of the gate electrode in step (11) are equal to the length of the drain side LDD region and the length d of the source side LDD region, respectively. Selected;
The patterned light shielding film formed in step (2) is:
It is divided into a drain side region and a source side region across the channel region,
A gap having an interval x equal to or longer than the length L of the channel region is provided between the drain side region and the source side region of the divided light shielding film;
When positioning the arrangement position of the patterned gate electrode film on the upper part of the gap of the interval x not less than the length L of the channel region,
The region on the drain side of the divided light shielding film overlaps at least a part of the drain side LDD region having a length d and a part of the drain region,
The region on the source side of the divided light shielding film overlaps at least a part of the source-side LDD region having a length d and a part of the source region,
A method of manufacturing a thin film transistor, comprising positioning an arrangement position of the patterned gate electrode film.

(Appendix 12)
For the length L of the channel region, the length d of the drain side LDD region, and the length d of the source side LDD region,
The gap x provided between the drain side region of the light shielding film and the source side region of the light shielding film, which is divided across the channel region, is selected so as to satisfy the following formula (1). ing:
L + 2d ≧ x ≧ L Formula (1)
12. The method for manufacturing a thin film transistor according to appendix 11, wherein:

(Appendix 13)
The region on the drain side of the light shielding film and the region on the source side of the light shielding film, which are divided across the channel region,
The end on the gate electrode side of the drain side region of the light shielding film and the end on the gate electrode side of the source side region of the light shielding film are:
To be symmetric with respect to the gate electrode,
13. The method of manufacturing a thin film transistor according to appendix 11 or 12, wherein an arrangement position of the patterned gate electrode film is positioned.

(Appendix 14)
The patterned light-shielding film is
A third region not located immediately below the patterned crystalline silicon film of the first conductivity type;
The region on the drain side of the light shielding film and the region on the source side of the light shielding film, which are divided across the channel region, are electrically connected via the third region of the light shielding film. The method for producing a thin film transistor according to any one of Supplementary notes 10 to 13, which is characterized in that

(Appendix 15)
The high-concentration impurity doped region of the second conductivity type reaches the upper surface of the underlayer,
15. The method of manufacturing a thin film transistor according to any one of appendices 10 to 14, wherein the second-conductivity-type low-concentration impurity-doped region also reaches the upper surface of the underlayer.

(Appendix 16)
For the top gate type field effect transistor,
The method of manufacturing a thin film transistor according to any one of appendices 10 to 15, further comprising a step of forming an interlayer insulating film formed so as to cover an upper surface of the gate electrode and the gate insulating film. Method.

(Appendix 17)
The first conductivity type is a conductivity type using holes as carriers,
The second conductivity type is a conductivity type using electrons as carriers,
The method of manufacturing a thin film transistor according to any one of Supplementary notes 10 to 16, wherein the top gate type field effect transistor configured is an N-channel type field effect transistor.

(Appendix 18)
The first conductivity type is a conductivity type using electrons as carriers,
The second conductivity type is a conductivity type using holes as carriers,
The method of manufacturing a thin film transistor according to any one of Supplementary notes 10 to 16, wherein the top gate type field effect transistor configured is a P-channel type field effect transistor.

(Appendix 19)
A display device driven using a top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate,
In the display device, a top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate, which is used as a driving device,
A display device, comprising the thin film transistor according to any one of Supplementary notes 1 to 9.

(Appendix 20)
An electronic device comprising a display device,
The display device employed in the electronic device is
20. An electronic device, which is the display device according to appendix 19.

(Appendix 21)
A liquid crystal display device driven using a top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate,
The liquid crystal display device
Adopts a method in which backlight for liquid crystal display is incident from the insulating transparent substrate side;
As a top gate type crystalline silicon thin film transistor formed on an insulating transparent substrate that receives light irradiation by the backlight light,
A liquid crystal display device using the thin film transistor according to any one of the supplementary notes 1 to 9.

(Appendix 22)
An electronic device adopting a liquid crystal display device as a display mechanism,
The liquid crystal display device employed in the electronic apparatus is
Adopts a method in which backlight for liquid crystal display is incident from the insulating transparent substrate side;
The electronic apparatus according to claim 21, wherein the liquid crystal display device is the liquid crystal display device according to appendix 21.

(Appendix 23)
The thin film transistor according to any one of appendices 1 to 9, wherein the crystalline silicon film is a polycrystalline silicon film.

(Appendix 24)
19. The method of manufacturing a thin film transistor according to any one of appendices 10 to 18, wherein the crystalline silicon film is a polycrystalline silicon film.

DESCRIPTION OF SYMBOLS 1 Insulating transparent substrate 2 Light-shielding film 3 Underlayer 4 Crystalline silicon film 5 Gate insulating film 6 Gate electrode film 7 Low concentration impurity region (LDD region)
8 Source region 9 Drain region 10 First interlayer insulating film 11 Contact hole 12 Electrode film 13 Pixel electrode 14 Drain line 15 Second interlayer insulating film 16 Gate line 21 Backlight unit 22 Active matrix substrate 23 Scan circuit 24 Data circuit 25 Pixel 26 Liquid crystal layer 27 Counter substrate 28 Liquid crystal panel 29 Liquid crystal display device 30 Housing 31 Mobile phone

Claims (4)

A top gate type thin film transistor formed on a transparent substrate,
In the thin film transistor,
On the transparent substrate,
A patterned light-shielding film;
An underlayer,
A patterned crystalline silicon film;
A gate insulating film;
Patterned gate electrode films are sequentially stacked;
The patterned crystalline silicon film is
A channel region overlapping the patterned gate electrode film;
Two low-concentration impurity regions in contact with the channel region;
The patterned light-shielding film is disposed so as not to overlap the channel region, and is disposed so that at least a part thereof overlaps in any of the low-concentration impurity regions of the two low-concentration impurity regions,
The patterned light-shielding film is
Having a third region not located directly under the patterned crystalline silicon film;
The region on the drain side of the light shielding film and the region on the source side of the light shielding film, which are divided across the channel region, are electrically connected via the third region of the light shielding film. A thin film transistor. The transparent substrate is an insulating transparent substrate;
The underlayer is a layer made of a light-transmissive insulating material;
2. The thin film transistor according to claim 1 , wherein an entire surface of the patterned light shielding film is surrounded by the transparent substrate and a base layer and is electrically isolated. A display device driven using a top gate type crystalline silicon thin film transistor formed on a transparent substrate,
In the display device, a top gate type crystalline silicon thin film transistor formed on a transparent substrate, which is used as a driving device,
A display device comprising the thin film transistor according to claim 1 . An electronic device comprising a display device,
The display device employed in the electronic device is
An electronic apparatus comprising the display device according to claim 3 .