JP5853440B2 - Light emitting device - Google Patents

Description

  The present invention relates to a light emitting device including a plurality of light emitting elements.

  Conventionally, an invention has been proposed in which three light emitting elements of red, green, and blue are incorporated, and at least the red light emitting element of the three light emitting elements is a semiconductor laser element (see Patent Document 1).

JP 2005-64163 A

  However, the conventional invention has a problem that light generated from a plurality of light emitting elements is extracted from the plurality of light emitting elements.

  Accordingly, an object of the present invention is to provide a light-emitting device that can extract light generated from a plurality of light-emitting elements from one light-emitting element.

  According to the present invention, the above problem is solved by the following means.

The present invention relates to a base, an end face light emitting element provided on the base or a holding member fixed to the base, and a light emitting end face of the end face light emitting element as a starting point, which is substantially perpendicular to the light emitting end face. A light emitting diode element provided on the base so as to cross the axis, the end surface light emitting element is provided below the light emitting diode element, and the light emitting wavelength of the end surface light emitting element is the light emitting diode It is a light-emitting device characterized by being longer than the emission peak wavelength of the element .

  The light-emitting diode element includes a substrate and a semiconductor layer constituting an element structure, and the light-emitting diode element is any one of an upper surface of the light-emitting diode element, a surface of the substrate on the semiconductor layer side, and the inside of the substrate. In addition, the light-emitting device includes an optical structure.

  In addition, the present invention is the light-emitting device described above, characterized in that a plurality of the edge-emitting elements are provided.

  Further, according to the present invention, the plurality of edge-emitting light emitting elements have substantially the same emission wavelength, and an axis substantially perpendicular to the light emission end face starting from the light emission end face of each edge-emitting element is The light-emitting device described above, wherein the light-emitting device is disposed obliquely and substantially rotationally symmetric with respect to a central axis of the light-emitting diode element.

In the present invention, a wavelength selective material that transmits light from the end surface light emitting element and reflects at least light from the light emitting diode element is provided between the light emitting diode element and the end surface light emitting element. The above-described light-emitting device.

  Further, the present invention is the above light emitting device, wherein an insulating light reflecting material is provided in at least a partial region on the side surface of the light emitting diode element.

  Further, the present invention is the above light emitting device, wherein a light shielding member is provided on the upper surface of the light emitting diode element along the periphery of the upper surface.

  Further, the present invention is the above light emitting device, wherein a wavelength conversion member including a phosphor excited by light of the light emitting diode element is provided on an upper surface of the light emitting diode element.

  ADVANTAGE OF THE INVENTION According to this invention, the light-emitting device which can take out the light produced from the several light emitting element from one light emitting element can be provided.

1 is a schematic conceptual diagram of a light emitting device according to an embodiment of the present invention. It is a figure explaining an example of an optical structure. It is a figure which shows a mode that the light-shielding member was provided in the light-emitting device which concerns on embodiment of this invention. It is a figure which shows the example of arrangement | positioning of several end surface light emitting element. It is a figure which shows the assembly method 1 of the light-emitting device based on Example 1 of this invention. It is a figure which shows the assembly method 2 of the light-emitting device based on Example 1 of this invention. It is a figure which shows the light-emitting device based on Example 2 of this invention. It is a figure which shows the light-emitting device based on Example 3 of this invention.

  EMBODIMENT OF THE INVENTION Below, the form for implementing this invention is demonstrated, referring attached drawing. Note that illustration of members that are not the subject of explanation may be omitted as appropriate.

  FIG. 1 is a schematic conceptual diagram of a light-emitting device according to an embodiment of the present invention, (a) is a plan view, and (b) is a cross-sectional view (the light-emitting device is cut by a broken line in FIG. 1 (a)). In the case).

  As shown in FIG. 1, the light emitting device according to the embodiment of the present invention includes a base body 11, a light emitting diode element 12 provided on the base body 11, and an edge-emitting element 13. The light emitting diode element 12 is provided so as to cross an axis substantially perpendicular to the light emitting end face of the end face light emitting element 13. This axis is within the light emitting end face of the edge emitting element 13, more preferably within the light emitting region within the light emitting end face of the edge emitting element 13 (area corresponding to the end face of the optical waveguide of the edge emitting element 13). The starting point. Hereinafter, this axis is also referred to as an optical axis of the edge-emitting element 13.

  In the light emitting device according to the embodiment of the present invention, the end surface light emitting element 13 is provided below the light emitting diode element 12, and the light of the end surface light emitting element 13 is incident on the lower surface of the light emitting diode element 12 and is emitted from the light emitting diode element 12. It is taken out.

  Therefore, according to the light emitting device according to the embodiment of the present invention, light generated from a plurality of light emitting elements (light emitting diode element 12 and end surface light emitting element 13) can be extracted from one light emitting element (light emitting diode element 12). it can. For this reason, light generated from a plurality of light-emitting elements can be extracted from a minute region corresponding to one light-emitting element.

  In the case of taking out light generated from a plurality of light emitting elements from each of the plurality of light emitting elements, color unevenness occurs when the optical system (lens) is passed through, thereby reducing the optical performance of a system such as a lighting device or a liquid crystal backlight. Cause. However, according to the light emitting device according to the embodiment of the present invention, such color unevenness can be effectively suppressed. Further, in the case of using a plurality of light emitting elements emitting substantially the same color, uneven luminance can be effectively suppressed.

  In the light emitting device according to the embodiment of the present invention, the upper surface of the light emitting diode element 12 is a main light extraction surface from which light from the light emitting diode element 12 and the end surface light emitting element 13 is extracted. In this way, the region from which light is extracted can be more limited than when light from a plurality of light emitting elements is extracted from the entire light emitting diode element 12.

  Details will be described below.

[Substrate]
As the base 11, for example, a mounting substrate provided with wiring can be used. Alternatively, the package may include a lead frame and a molded body that integrally holds the lead frame. A light emitting diode element 12 is provided on the base 11. The light emitting diode element 12 can be directly provided on the base 11 by being placed on the upper surface of the base 11, or the base by being placed on a submount or the like placed on the upper surface of the base 11. 11 may be provided indirectly.

  As shown in FIG. 1, the base body 11 is a base body having a through hole, and light from the edge-emitting element 13 enters the lower surface of the light emitting diode element 12 through the through hole of the base body 11. In this case, as the base 11, a ceramic material, a metal material, or a resin material can be used. A light reflecting material can be formed on the inner wall of the through hole. In this way, light from the edge-emitting element 13 can be efficiently incident on the lower surface of the light-emitting diode element 12 while suppressing light loss due to absorption by the base 11.

  As the base 11, a light-transmitting substrate such as a sapphire substrate or a glass substrate can be used. In this case, the light from the edge-emitting element 13 passes through the substrate 11 and enters the lower surface of the light-emitting diode element 12. When a translucent substrate is used as the base 11, it is preferable to use a translucent conductive material such as ITO as the wiring provided on the base 11.

  Note that the light-emitting device according to the embodiment of the present invention preferably includes a holding member (not shown in FIG. 1) that holds the edge-emitting element 13. Such a holding member can be provided as a part of the base 11, but can also be provided as a member separate from the base 11. That is, the edge-emitting element 13 is provided on the base 11 or a holding member fixed to the base 11. If the holding member is provided as a member separate from the base body 11, the position and orientation of the end surface light emitting element 13 with respect to the light emitting diode element 12 can be easily adjusted. The edge-emitting element 13 can be provided directly or indirectly on the base 11 or the holding member, similarly to the light-emitting diode element 12 described above.

[Light emitting diode element]
(Example of light-emitting diode element)
As the light emitting diode element 12, for example, an element including a substrate and a semiconductor layer constituting an element structure can be used. In addition, a semiconductor layer constituting the element structure from which the growth substrate is peeled can be used as the light emitting diode element 12.

<Board>
As the substrate, a translucent substrate is preferably used. Moreover, the thickness of a board | substrate shall be 50 micrometers-200 micrometers, for example. Note that the light-transmitting substrate may be a growth substrate used for growing a semiconductor layer, or may be a substrate attached to the semiconductor layer. When the substrate is attached to the semiconductor layer, for example, the growth substrate is peeled off from the semiconductor layer by lift-off or the like. After that, if a substrate is attached to the semiconductor layer directly through a light-transmitting adhesive or by thermocompression bonding or surface activation bonding, light can be easily extracted efficiently. As the growth substrate, for example, a sapphire substrate or a GaN substrate can be used. In addition to these, a glass substrate or the like can be used as the substrate attached to the semiconductor layer, and the substrate may contain a phosphor.

<Semiconductor layer>
As the semiconductor layer, for example, a nitride semiconductor layer can be used. The thickness of the nitride semiconductor layer is, for example, 3 μm to 10 μm. The nitride semiconductor can change the band gap energy in a range corresponding to the ultraviolet region to the visible / infrared region depending on its composition. In particular, a nitride semiconductor can constitute a semiconductor layer capable of efficiently emitting short-wavelength light such as ultraviolet light and blue light. Such a nitride semiconductor layer capable of efficiently emitting short-wavelength light is unlikely to absorb longer-wavelength light such as green and red light. For this reason, by using a nitride semiconductor layer for the semiconductor layer of the light emitting diode element 12, it is easy to suppress loss due to light absorption of the edge-emitting element 13 and to easily extract light from the edge-emitting element 13 efficiently. it can.

(Light-emitting diode element mounting)
For example, the light-emitting diode element 12 can be flip-chip mounted on the base 11 using a gold bump or the like by providing a positive electrode and a negative electrode on the same surface side. This eliminates the need for an electrode or wire on the upper surface side of the light emitting diode element 12, thereby improving the light utilization efficiency of the light emitting diode element 12 and the end surface light emitting element 13.

  As an electrode of the light emitting diode element 12, for example, a translucent conductive material such as ITO can be used. In this way, the light of the edge-emitting element 13 can be easily transmitted to the upper surface through the electrode of the light-emitting diode element 12, so that the light use efficiency of the edge-emitting element 13 can be improved.

  In the case where the light emitting diode element 12 includes a substrate and a semiconductor layer, for example, a positive electrode and a negative electrode are provided on the same surface side, or a positive electrode and a negative electrode are provided on opposite surfaces, respectively. It can also be mounted so that is on the upper surface side. The electrode on the upper surface side is connected to the wiring of the base 11 and the lead frame by a wire. In this case, it is preferable to use a translucent member as the fixing material of the light emitting diode element 12. Furthermore, you may give the light-scattering effect by mix | blending an insulating light-scattering material with the fixing material. Moreover, when the light emitting diode element 12 is provided with an electrode on the lower surface side, it can be electrically connected to the wiring of the base body 11 or the lead frame by blending a translucent conductive material into the fixing material.

(Optical structure)
<Top surface of light emitting diode element>
An optical structure can be formed on the upper surface of the light emitting diode element 12. In this way, the light of the light emitting diode element 12 and the end surface light emitting element 13 changes its traveling direction on the upper surface of the light emitting diode element 12 and is easily extracted from the upper surface of the light emitting diode element 12. The uniformity of the light intensity can be improved.

  When the light emitting diode element 12 including the substrate and the semiconductor layer is used and the substrate is on the upper surface side, a method of directly processing the substrate by etching, laser processing, or blasting, or a light transmitting member is printed on the substrate. The optical structure can be formed by a method or the like.

  Further, when the light emitting diode element 12 including the substrate and the semiconductor layer is used and the semiconductor layer is on the upper surface side, a method of directly processing the semiconductor layer and the electrode of the light emitting diode element 12 by etching or the like, or a translucent member The above-mentioned optical structure can be formed by a method of printing on a semiconductor layer or an electrode.

(Surface on the semiconductor layer side of the substrate of the light emitting diode element>
When the light emitting diode element 12 includes a substrate and a semiconductor layer, an optical structure can be formed on the surface of the substrate of the light emitting diode element 12 on the semiconductor layer side. In this way, the light of the light emitting diode element 12 and the end surface light emitting element 13 changes its traveling direction on the surface of the substrate on the semiconductor layer side, and is easily extracted from the upper surface of the light emitting diode element 12. The uniformity of light intensity on the upper surface can be improved.

<Inside of light emitting diode element substrate>
When the light emitting diode element 12 includes a substrate and a semiconductor layer, an optical structure can be formed inside the substrate of the light emitting diode element 12. This makes it possible to change the traveling direction of light inside the substrate and to be easily extracted from the upper surface of the light emitting diode element 12 and to improve the uniformity of light intensity on the upper surface of the light emitting diode element 12. The optical structure in this case can be formed using a femtosecond laser or the like.

<Example of optical structure>
FIG. 2 is a diagram illustrating an example of an optical structure. As the optical structure, for example, convex and / or concave can be preferably used. Convex and concave portions can be formed regularly or irregularly. Examples of the regularly formed convexes and concaves include, for example, a single convex or concave component such as a lens shown in FIG. 2A or a prism shown in FIG. An example in which a plurality of protrusions and recesses are configured by a pattern can be given. Each of the plurality of convexes and concaves may be the lens or the prism, or a polyhedron having a trapezoidal cross-sectional view (preferably the side surface is inclined or curved) as shown in FIG. But you can. Examples of irregularly formed protrusions and depressions include, for example, unevenness on the roughened surface (FIG. 2D).

[Edge-emitting device]
(Edge-emitting elements and directivity)
The edge-emitting element 13 is a light-emitting element that emits directional light from the end face, and has an optical waveguide that extends in a direction substantially perpendicular to the light-emitting end face in a semiconductor layer constituting the element structure. As the specific edge emitting element 13, for example, a light emitting element such as a semiconductor laser element or a super luminescence diode can be used. If these are used, the light from the edge-emitting element 13 can be efficiently incident on the lower surface of the light-emitting diode element 12.

(Wavelength of light emitted from the edge-emitting element)
The emission wavelength of the edge-emitting element 13 is preferably longer than the emission peak wavelength of the light-emitting diode element 12. In general, the light emitting diode element extremely easily absorbs light in a wavelength region shorter than the emission peak wavelength. Therefore, in this case, the light from the edge-emitting element 13 is not easily absorbed by the light-emitting diode element 12, so that the light from the edge-emitting element 13 can be easily extracted from the light-emitting diode element 12. Use efficiency improves.

[Between light-emitting diode element and edge-emitting element]
(Optical parts)
An optical component can be provided between the light emitting diode element 12 and the end surface light emitting element 13. In this way, since the direction of the light emitted from the edge-emitting element 13 can be adjusted, the light utilization efficiency of the edge-emitting element 13 can be improved. As the optical component, for example, a condensing lens, a Frey array lens, a rod lens, or the like can be used.

(Wavelength selective material)
Between the light emitting diode element 12 and the edge emitting element 13, a wavelength selective material (for example, a dielectric multilayer film) that transmits the light of the edge emitting element 13 and reflects other light can be provided. In this way, the light from the edge-emitting element 13 can be easily extracted from the upper surface of the light emitting diode element 12 through the wavelength selective material, and the light from the light emitting diode element 12 is reflected by the wavelength selective material. Since it becomes easy to take out from the upper surface of the light emitting diode element 12, the light utilization efficiency of the light emitting diode element 12 and the end surface light emitting element 13 can be improved.

  For example, when an optical component is provided between the light emitting diode element 12 and the end surface light emitting element 13, the wavelength selective material can be provided on the optical component. Moreover, when using a translucent board | substrate as the base | substrate 11, it can provide in the upper surface and / or lower surface of a translucent board | substrate.

[Closing out]
(Insulating light reflecting material on the side of the light emitting diode element)
An insulating light reflecting material can be provided in at least a partial region on the side surface of the light emitting diode element 12. In particular, it is preferable to provide an insulating light reflecting material on all side surfaces of the light emitting diode element 12.

  By doing so, it is possible to clearly identify the upper surface of the light emitting diode element 12 as the light emitting region, giving up the insulating light reflecting material. Further, since the light of the edge-emitting element 13 incident on the light-emitting diode element 12 is reflected by the insulating light reflecting material and easily extracted from the upper surface of the light-emitting diode element 12, the light use efficiency of the edge-emitting element 13 is improved. Can be made. Furthermore, since the light reflected by the insulating light reflecting material is scattered, the uniformity of the light intensity on the upper surface of the light emitting diode element 12 can be improved.

  The insulating light reflecting material is fixed to at least a partial region on the side surface of the light emitting diode element 12 by being mixed and adhered to the light transmitting member or by electrophoretic electrodeposition.

(Light shielding member)
3A and 3B are views showing a state in which a light-shielding member is provided in the light-emitting device according to the embodiment of the present invention. FIG. 3A is a plan view, and FIG. 3B is a cross-sectional view (the light-emitting device is shown in FIG. It is a cross section when cut by a broken line in the middle).

  As shown in FIG. 3, a light shielding member 14 may be provided on the upper surface of the light emitting diode element 12 along the periphery of the upper surface. In this way, it is possible to clearly specify the upper surface of the light emitting diode element 12 as the light emitting region with the light shielding member 14 being parted. The light shielding member 14 can be provided by sputtering silver or aluminum in a frame shape, or mounting a frame member made of an insulating light reflecting material. Further, when the light shielding member 14 is coated with a light transmissive member including an insulating light reflecting material on the side surface of the light emitting diode element 12, the light transmissive member including the insulating light reflecting material is applied to the upper surface of the light emitting diode element 12. It can also be suppressed from flowing.

[Wavelength conversion member containing phosphor]
A wavelength conversion member including a phosphor can be provided on the upper surface of the light emitting diode element 12. In this way, the wavelength of light from the light-emitting diode element 12 and the edge-emitting element 13 can be converted, so that it is easy to increase the number of wavelengths.

  The phosphor is fixed to the upper surface of the light emitting diode element 12 by, for example, adhesion using a translucent member or electrophoretic electrodeposition. The phosphor may be any material that is excited by the light from the light emitting diode element 12.

  Further, if one light emitting diode element 12 whose emission wavelength is blue, one end light emitting element 13 whose emission wavelength is red, and a phosphor whose emission wavelength is yellow, a light emitting diode element 12 is provided. In addition, redness can be added to the white light obtained from the phosphor, and light emission with higher color rendering can be achieved.

[Example of arrangement of multiple edge-emitting elements]
FIG. 4 is a diagram illustrating an arrangement example of a plurality of edge-emitting elements. In the embodiment of the present invention, a plurality of edge-emitting elements can be used. In this case, the plurality of edge-emitting elements 13 can be arranged in a vertical incidence arrangement, that is, the optical axes of all the edge-emitting elements 13 can be arranged substantially parallel to the central axis of the light-emitting diode elements 12, As shown in FIG. 4, the oblique incident arrangement, that is, the optical axis of each end surface light emitting element 13 is oblique with respect to the central axis of the light emitting diode element 12, and preferably arranged so as to intersect the central axis. can do.

  When a plurality of end surface light emitting elements 13 are arranged in the oblique incident arrangement described above, the end surface light emitting elements 13 are substantially rotationally symmetric with respect to the central axis of the light emitting diode element 12, that is, the top surface of the substrate 11. Arranged so as to be equally arranged in view (for example, when two end-emitting elements 13 are arranged, they are arranged at intervals of 180 °, and when three end-emitting elements 13 are arranged, they are arranged at intervals of 120 °). It is preferable to do. In this way, it is possible to reduce the bias of the light distribution of the end surface light emitting element 13 extracted from the light emitting diode element 12. At this time, in particular, the plurality of end surface light emitting elements 13 are preferably arranged so that their optical axes intersect within the light emitting diode element 12. Further, the end surface light emitting element 13 is arranged so as to be inclined so that the optical axis thereof is larger than 0 ° and smaller than 45 ° with respect to the central axis of the light emitting diode element 12, whereby light is efficiently transmitted to the light emitting diode element 12. It can enter well and is preferable.

  The oblique incidence arrangement is particularly effective in widening the light distribution of light having that wavelength when arranging a plurality of edge-emitting elements 13 having substantially the same emission wavelength. Further, the present invention may be applied to a case where a plurality of end surface light emitting elements 13 having substantially the same emission wavelength are used as a set, and a plurality of sets of end surface light emitting elements having different emission wavelengths are used (for example, the emission wavelength is 2). Two end surface light emitting devices are arranged at intervals of 180 ° when viewed from the top of the substrate, and two end surface light emitting devices having a light emission wavelength of green (for example, at an interval of 90 ° with respect to the red end surface light emitting device) in the same manner Arranged at intervals of 180 °). On the other hand, the normal incidence arrangement is preferable in order to align the optical axes of the end surface light emitting elements 13 and is particularly suitable when a plurality of end surface light emitting elements 13 having different emission wavelengths are disposed.

[Various materials]
Although the light emitting device according to the embodiment of the present invention has been described above, for example, the following can be used as the insulating light reflecting material, the light transmitting member, and the phosphor described above.

(Insulating light reflector)
As the insulating light reflecting material, for example, inorganic powder of silicon dioxide, titanium dioxide, aluminum oxide, calcium carbonate, barium sulfate, or a mixture thereof can be used.

(Light reflecting material)
As the light reflecting material, in addition to the insulating light reflecting material described above, for example, a metallic reflecting material such as aluminum or silver can be used.

(Translucent member)
As the translucent member, for example, an alicyclic epoxy resin, a silicone resin, a fluororesin, a glass precursor, or a mixture thereof can be used.

(Insulating light scattering material)
Examples of the insulating light scattering material include silicon or acrylic resin fine particles, hollow glass beads, or inorganic powders of silicon dioxide, titanium dioxide, zirconium dioxide, aluminum oxide, zinc oxide, lead carbonate, barium sulfate, and zinc sulfide. Or mixtures thereof.

(Translucent conductive material)
As the translucent conductive material, for example, ITO or the like can be used.

(Phosphor)
As the phosphor, for example, YAG, TAG, and silicate phosphors can be used.

(Assembly method 1)
FIG. 5 is a diagram illustrating an assembling method 1 of the light emitting device according to the first embodiment of the invention. Note that some drawings include a cross-sectional view (a cross section when the light-emitting device is cut along a broken line in the plan view) in addition to the plan view.

  First, as shown in FIG. 5A, a mounting substrate 101 having a through hole A is prepared. A wiring 102 is provided on the mounting substrate 101.

  Next, as shown in FIG. 5B, the light emitting diode element 103 is flip-chip mounted on the mounting substrate 101 by conductive adhesive, solder paste, or ultrasonic bonding.

  Next, as shown in FIG. 5C, a resin 104 containing an insulating light reflecting material is applied to the side surface of the light emitting diode element 103.

  Next, as illustrated in FIG. 5D, a holding member 105 is prepared, and an optical component 106 such as a rod lens is fixed to the prepared holding member 105. A wavelength selective material 107 is formed on the emission surface of the optical component 106. As the holding member 105, for example, a ceramic material, a metal material, a resin material, or the like can be used.

  Next, as shown in FIG. 5E, the mounting substrate 101 on which the light emitting diode element 103 is mounted is fixed to the upper surface of the holding member 105, and the package 108 containing the semiconductor laser element is attached to the lower surface of the holding member 105. Fix it. At this time, it is preferable to first fix the package 108 containing the semiconductor laser element to the holding member 105 and adjust the fixing position of the holding member 105 with respect to the mounting substrate 101 while causing the semiconductor laser element to emit light. As the package 108 that houses the semiconductor laser element, an airtight sealed package such as a can package or a non-airtight sealed package obtained by removing the cap from the can package can be used.

(Assembly method 2)
FIG. 6 is a diagram illustrating an assembling method 2 of the light emitting device according to the first embodiment of the invention. Note that some drawings include a cross-sectional view (a cross section when the light-emitting device is cut along a broken line in the plan view) in addition to the plan view.

  First, as shown in FIG. 6A, a mounting substrate 101 having translucency is prepared. A wiring 102 is provided on the mounting substrate 101. Note that the wiring 102 is made of a light-transmitting conductive material.

  Next, as shown in FIG. 6B, a light emitting diode element is formed by a conductive adhesive (particularly, a translucent conductive adhesive in which ITO particles are blended with a translucent resin), solder paste, or ultrasonic bonding. 103 is flip-chip mounted on the mounting substrate 101.

  Next, as shown in FIG. 6C, a resin 104 containing an insulating light reflecting material is applied to the side surface of the light emitting diode element 103. When there is a possibility that the resin 104 containing the insulating light reflecting material may wrap around the lower surface of the light emitting diode element 103, the lower surface of the light emitting diode element 103 may be filled with a light transmitting resin as the underfill 111 first. .

  A wavelength selective material 107 is provided on the lower surface of the mounting substrate 101. The wavelength selective material 107 can be provided between the wiring 102 and the implementation substrate 101 and positioned on the upper surface of the mounting substrate 101.

  Next, as shown in FIG. 6D, an optical component 109 such as a condenser lens or a light scattering member is fixed to the holding member 105.

  Next, as shown in FIG. 6E, the mounting substrate 101 on which the light emitting diode element 103 is mounted is fixed to the upper surface of the holding member 105, and the package 108 that houses the semiconductor laser element is attached to the lower surface of the holding member 105. Fix it. At this time, it is preferable to first fix the package 108 containing the semiconductor laser element to the holding member 105 and adjust the fixing position of the holding member 105 with respect to the mounting substrate 101 while causing the semiconductor laser element to emit light. As the package 108 that houses the semiconductor laser element, an airtight sealed package such as a can package or a non-airtight sealed package obtained by removing the cap from the can package can be used.

The light emitting device according to the first embodiment of the present invention assembled by the assembly method 1 and the assembly method 2 described above can be configured as 1 to 3 shown in the following table, for example. In Table 1, LD is a semiconductor laser element, and LED is a light emitting diode element. Note that the LD and the LED can emit light simultaneously or independently. Moreover, in the structure (3) in Table 1, it is preferable that the light emission wavelength of LD is longer than the light emission peak wavelength of LED in a blue region.

  FIG. 7 is a diagram showing a light-emitting device according to Example 2 of the present invention.

  The light emitting device according to the second embodiment of the present invention is different from the light emitting device according to the first embodiment of the present invention in that the wavelength conversion member 110 is provided on the upper surface of the light emitting diode element 103. The wavelength conversion member 110 is obtained by printing a silicone resin containing a phosphor.

The light emitting device according to Example 2 of the present invention thus assembled can be driven, for example, as shown in 1 and 2 shown in the following table. In Table 2, LD is a semiconductor laser element, and LED is a light emitting diode element. In the configuration (1) in Table 2, the LD and the LED can emit light simultaneously or independently. By simultaneously emitting light and changing only the light intensity of the LD whose emission wavelength is red, the color rendering property can be changed. Further, in the configuration (2) in Table 2, the emission wavelength of the LD is preferably longer than the emission peak wavelength of the LED in the blue region.

  As the wavelength conversion member 110, in addition to printing a silicone resin blended with a phosphor, a solid body (silicone resin or glass material) blended with a phosphor can also be mounted.

  In the above description, the upper and side surfaces of the wavelength conversion member 110 are exposed. However, after the wavelength conversion member 110 is placed on the light emitting diode element 103, a resin containing an insulating light reflecting material is applied. The side surface of the wavelength conversion member 110 may also be covered with the resin. At this time, the upper surface of the wavelength conversion member 110 is exposed from the resin.

  FIG. 8 is a diagram showing a light-emitting device according to Example 3 of the present invention.

  The light emitting device according to Example 3 of the present invention is different from the light emitting device according to Example 1 of the present invention in that it includes two semiconductor laser elements.

The light-emitting device according to Example 3 of the present invention thus assembled can be driven as shown in 1 shown in the following table, for example. In Table 3, LD is a semiconductor laser element, and LED is a light emitting diode element. Each LD and LED can emit light simultaneously or independently. In the configuration (2) in Table 3, the emission wavelength of each LD is preferably longer than the emission peak wavelength of the LED in the blue region.

  The light emitting devices according to the first to third embodiments of the present invention described above can be used for various applications by appropriately selecting the wavelengths of light emitted from a plurality of elements. For example, when emitting red, green and blue light from multiple elements, lighting device, liquid crystal backlight, portable strobe, CIS scanner, amusement (light decoration such as pachinko), self-luminous display, projection display (Pico projector, projector, etc.), retinal scanning display, etc.

  As mentioned above, although embodiment and the Example of this invention were described, these description is related to an example of this invention, and this invention is not limited at all by these description.

DESCRIPTION OF SYMBOLS 11 Substrate 12 Light emitting diode element 13 End surface light emitting element 14 Light shielding member 101 Mounting substrate 102 Wiring 103 Light emitting diode element 104 Resin 105 Holding member 106 Optical component 107 Wavelength selective material 108 Package for housing semiconductor laser element 109 Optical component 110 Wavelength Conversion member 111 Underfill

Claims (8)

A substrate;
An edge-emitting element provided on the substrate or a holding member fixed to the substrate;
A light emitting diode element provided on the base so as to cross an axis substantially perpendicular to the light emitting end face starting from the inside of the light emitting end face of the end face light emitting element;
With
The edge-emitting element is provided below the light-emitting diode element ;
The emission wavelength of the edge-emitting element is longer than the emission peak wavelength of the light emitting diode element,
A light emitting device characterized by that. The light emitting diode element includes a substrate and a semiconductor layer constituting an element structure,
Upper surface of the light emitting diode element, a surface of the semiconductor layer side of the substrate, either internally said substrate comprises an optical structure, the light emitting device according to claim 1, wherein the. Comprising a plurality of said edge-emitting element, that the light emitting device according to claim 1 or claim 2, characterized in. The plurality of edge-emitting light emitting elements have substantially the same emission wavelength,
An axis that starts from the light emitting end face of each end face light emitting element and that is substantially perpendicular to the light emitting end face is disposed obliquely and substantially rotationally symmetric with respect to the central axis of the light emitting diode element. The light-emitting device according to claim 3 . The wavelength selective material which transmits the light of the end surface light emitting element and reflects at least the light of the light emitting diode element is provided between the light emitting diode element and the end surface light emitting element. The light emitting device according to any one of claims 1 to 4 . At least a partial region, the light emitting device according to any one of claims 1 to 5, an insulating light reflective material is provided, it is characterized by the side surface of the light emitting diode element. The light emitting diode on the upper surface of the device, the light shielding member is provided along the periphery of the upper surface, that the light emitting device according to any one of claims 1 to 6, wherein. Wherein the upper surface of the light emitting diode element, a wavelength conversion member including a phosphor excited by light of the light emitting diode element is provided, according to any one of claims 1 to 7, characterized in that Light emitting device.

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