JP5787170B2 - 検出能を高めるフォトダイオードデバイス及びその形成方法 - Google Patents
検出能を高めるフォトダイオードデバイス及びその形成方法 Download PDFInfo
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- JP5787170B2 JP5787170B2 JP2012026650A JP2012026650A JP5787170B2 JP 5787170 B2 JP5787170 B2 JP 5787170B2 JP 2012026650 A JP2012026650 A JP 2012026650A JP 2012026650 A JP2012026650 A JP 2012026650A JP 5787170 B2 JP5787170 B2 JP 5787170B2
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- 238000000034 method Methods 0.000 title claims description 22
- 230000002708 enhancing effect Effects 0.000 title 1
- 230000000903 blocking effect Effects 0.000 claims description 34
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 23
- 229920001940 conductive polymer Polymers 0.000 claims description 19
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000010406 cathode material Substances 0.000 claims description 9
- UUIQMZJEGPQKFD-UHFFFAOYSA-N Methyl butyrate Chemical compound CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 claims description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 150000004702 methyl esters Chemical class 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims 1
- 229910000024 caesium carbonate Inorganic materials 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 11
- 108091008695 photoreceptors Proteins 0.000 description 10
- 239000000975 dye Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- JVWLOLRJWFXRLM-UHFFFAOYSA-N [C].[Cs] Chemical compound [C].[Cs] JVWLOLRJWFXRLM-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 231100001231 less toxic Toxicity 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Description
D*=(AΔf)0.5/NEP (1)
NEP=in/R,in=(2qIdΔf) (2)
D*=((AΔf)0.5R/in=R/(2qJd)0.5
12透明導電性フィルム
14導電性ポリマー層
16有機活性層
18電荷ブロッキング層
20陰極電極
Claims (2)
- 電荷ブロッキング層を有し、光電子増倍効果を備えるフォトダイオードデバイスの形成方法であって、前記方法は、
基板を準備する段階、
前記基板の上に透明導電性フィルムを形成する段階、
前記透明導電性フィルムの上に導電性ポリマー層を形成する段階、
前記導電性ポリマー層の上に有機活性層を形成する段階、
前記有機活性層の上に電荷ブロッキング層を形成する段階、および、
前記電荷ブロッキング層の上に陰極金属を形成する段階で構成され、
前記透明導電性フィルムは厚さ1μmから100μmの酸化インジウムスズ(ITO)であって、前記透明導電性フィルムを形成する方法はスパッタリング、蒸着、化学気相成長のうちのいずれかであり、
前記導電性ポリマー層の厚さは1nmから1000nmの範囲にあり、
前記有機活性層はポリ3−ヘキシルチオフェン(poly 3−hexylthiophene、P3HT)、フェニルC 61 酪酸メチルエステル([6,6]−phenyl C61−butyric acid methyl ester 、PCBM)、および有機染料であるIr−125を含み、
前記有機活性層の形成方法は、まずポリ3−ヘキシルチオフェン(poly 3−hexylthiophene、P3HT)及びフェニルC61酪酸メチルエステル([6,6]−phenyl C61−butyric acid methyl ester 、PCBM)を準備し、有機染料であるIr−125を前記P3HT及びPCBMに混ぜて有機混合物を形成し、前記有機混合物を前記導電性ポリマー層の上に堆積する方法であり、
前記電荷ブロッキング層の形成方法は熱蒸着法であって、前記電荷ブロッキング層の材料には、バトクプロイン(2,9−ジメチル−4,7−ジフェニル−1,10−フェナントロリン;BCP)が含まれ、前記電荷ブロッキング層の厚さは18nmから22nmの範囲にあることを特徴とする方法。 - 検出能を高めるために電荷ブロッキング層を有し、光電子増倍効果を備えるフォトダイオードデバイスであって、前記デバイスは、
基板、
前記基板に設置された透明導電性フィルム、
前記透明導電性フィルムに設置された導電性ポリマー層、
前記導電性ポリマー層に設置された有機活性層、
前記有機活性層に設置された電荷ブロッキング層、および、
前記電荷ブロッキング層に設置された陰極金属層から構成され、
前記透明導電性フィルムは厚さ1μmから100μmの酸化インジウムスズ(ITO)であって、
前記導電性ポリマー層の厚さは1nmから1000nmの範囲にあり、
前記有機活性層はポリ3−ヘキシルチオフェン(poly 3−hexylthiophene、P3HT)、フェニルC 61 酪酸メチルエステル([6,6]−phenyl C61−butyric acid methyl ester 、PCBM)、および有機染料であるIr−125を含み、
前記有機活性層の形成方法は、まずポリ3−ヘキシルチオフェン(poly 3−hexylthiophene、P3HT)及びフェニルC61酪酸メチルエステル([6,6]−phenyl C61−butyric acid methyl ester 、PCBM)を準備し、有機染料であるIr−125を前記P3HT及びPCBMに混ぜて有機混合物を形成し、前記有機混合物を前記導電性ポリマー層の上に堆積する方法であり、
前記電荷ブロッキング層の材料には、バトクプロイン(2,9−ジメチル−4,7−ジフェニル−1,10−フェナントロリン;BCP)が含まれ、前記電荷ブロッキング層の厚さは18nmから22nmの範囲にあり、
前記陰極金属層は陰極材料と配線からなり、前記陰極材料は外部回路に電気的に接続され、前記陰極材料はカルシウム、リチウム、炭酸セシウム(Cs2CO3)、酸化チタン(TiOx)、酸化亜鉛(ZnO)のうちから選択され、前記配線の材料は金、銀、銅、アルミニウム、ニッケル、亜鉛のうちから選択される、ことを特徴とするフォトダイオードデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100144798 | 2011-12-06 | ||
TW100144798A TWI458105B (zh) | 2011-12-06 | 2011-12-06 | 提高光偵測度之光偵測元件及其形成方法 |
Publications (2)
Publication Number | Publication Date |
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JP2013120928A JP2013120928A (ja) | 2013-06-17 |
JP5787170B2 true JP5787170B2 (ja) | 2015-09-30 |
Family
ID=48523393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012026650A Expired - Fee Related JP5787170B2 (ja) | 2011-12-06 | 2012-02-09 | 検出能を高めるフォトダイオードデバイス及びその形成方法 |
Country Status (3)
Country | Link |
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US (1) | US20130140662A1 (ja) |
JP (1) | JP5787170B2 (ja) |
TW (1) | TWI458105B (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US6451415B1 (en) * | 1998-08-19 | 2002-09-17 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device with an exciton blocking layer |
GB0701909D0 (en) * | 2007-01-31 | 2007-03-14 | Imp Innovations Ltd | Deposition Of Organic Layers |
JP5258037B2 (ja) * | 2008-09-08 | 2013-08-07 | 国立大学法人京都大学 | 光電変換素子、その製造方法、及び太陽電池 |
WO2010059240A1 (en) * | 2008-11-21 | 2010-05-27 | Plextronics, Inc. | Doped interfacial modification layers for stability enhancement for bulk heterojunction organic solar cells |
US8847066B2 (en) * | 2009-05-19 | 2014-09-30 | Regents Of The University Of Minnesota | Graded organic photovoltaic device |
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2011
- 2011-12-06 TW TW100144798A patent/TWI458105B/zh not_active IP Right Cessation
-
2012
- 2012-02-09 JP JP2012026650A patent/JP5787170B2/ja not_active Expired - Fee Related
- 2012-05-08 US US13/466,263 patent/US20130140662A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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JP2013120928A (ja) | 2013-06-17 |
TWI458105B (zh) | 2014-10-21 |
US20130140662A1 (en) | 2013-06-06 |
TW201324794A (zh) | 2013-06-16 |
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