JP5751844B2 - Method for manufacturing piezoelectric device - Google Patents

Description

  The present invention relates to a method for manufacturing a piezoelectric device.

  2. Description of the Related Art Conventionally, a piezoelectric device in which a piezoelectric element is mounted on a base substrate is known as known, and the following manufacturing methods are known. FIG. 4 is a perspective view schematically showing a piezoelectric device manufacturing method in the prior art. In the manufacturing method shown here, first, a processing technique such as etching, vapor deposition or the like is formed in a flat piezoelectric element wafer 1 made of a piezoelectric material. The piezoelectric element 2 is integrally formed by appropriately using the film forming technique, and then a mechanical pressure is applied to the piezoelectric element 2 integrally formed in the piezoelectric element wafer 1 from above, so that the piezoelectric element The beam-shaped connecting portion 3 that connects the piezoelectric element wafer 1 and the piezoelectric element wafer 1 is broken to separate the piezoelectric elements 2, and at the same time, the separated piezoelectric elements 2 are arranged in advance below the piezoelectric element wafer 1. 4 is placed in the element storage recess 4a as it is, and then aligned, and then the piezoelectric elements 2 are taken out one by one from the alignment tray 4 by vacuum suction or the like, and a joining member such as a conductive adhesive on the base substrate 5 in advance. 6 was arranged It mounted on the pass. (For example, see Patent Document 1)

JP2007-135131A

  However, in the piezoelectric device manufacturing method in the prior art, the piezoelectric elements separated from the piezoelectric element wafer are once aligned on the alignment tray, and then the piezoelectric elements are taken out one by one and transferred (mounted) onto the base substrate. There was a problem that productivity was poor.

  The present invention has been made in view of the above-described problems of the prior art, and an object thereof is to provide a method for manufacturing a piezoelectric device with good productivity.

A method for manufacturing a piezoelectric device comprising a piezoelectric element mounted on a base substrate, the step of integrally forming the piezoelectric element in a piezoelectric element wafer, and the step of forming the piezoelectric element integrally in the piezoelectric element wafer A step of bonding the piezoelectric element to the base substrate in a wafer state, a step of separating the piezoelectric element bonded to the base substrate from the piezoelectric element wafer, and a region excluding the piezoelectric element bonded to the base substrate. wherein possess a step of removing the piezoelectric device wafer, and in the step of separating the piezoelectric element from the piezoelectric device wafer, the piezoelectric element is bonded to the base substrate in a state of pressing to the base substrate side, The piezoelectric element wafer and the base substrate in a region excluding the piezoelectric element bonded to the base substrate are relatively separated from each other so that the piezoelectric element and the piezoelectric element are separated from each other. To generate a stress in the connecting portion between the child wafer, a method for manufacturing a piezoelectric device by breaking the connecting portion by the stress removing simultaneously the piezoelectric element wafer when separating the piezoelectric element from the piezoelectric device wafer.

The pre-Symbol piezoelectric device wafer and manufacturing method of dividing rather pressure photovoltaic device taken by vacuum suction.

  According to the present invention, it is not necessary to align the piezoelectric element separated from the piezoelectric element wafer on the alignment tray, and it is not necessary to transfer the alignment element from the alignment tray to the base substrate. And productivity can be improved.

The perspective view which shows typically the manufacturing method of the piezoelectric device in one Example of this invention (Example 1) Side cross-sectional view of piezoelectric device The perspective view which shows typically the manufacturing method of the piezoelectric device in one Example of this invention (Example 2). The perspective view which shows typically the manufacturing method of the piezoelectric device in a prior art

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding elements are denoted by the same reference numerals.

  FIG. 1 is a perspective view schematically showing a method for manufacturing a piezoelectric device in one embodiment of the present invention, and FIG. 2 is a side sectional view of the piezoelectric device. The piezoelectric device manufactured in this example is a package type piezoelectric device in which a tuning fork type piezoelectric element 2 is mounted on a flat base substrate 5 and hermetically sealed with a cap-shaped lid member 7 as shown in FIG. When manufacturing a device, first, as shown in FIG. 1, a processing technique such as etching or a film forming technique such as vapor deposition is applied to a flat-plate wafer-like piezoelectric element wafer 1 made of a piezoelectric material such as quartz. A plurality of piezoelectric elements 2 that can operate as elements are integrally formed as appropriate (step 1). At this time, the piezoelectric element 2 is connected to the piezoelectric element wafer 1 in a cantilevered manner via the beam-like connection portion 3. In addition, the connection form of the piezoelectric element 2 and the piezoelectric element wafer 1 is not limited to this, for example, the form in which the piezoelectric element 2 is connected to the piezoelectric element wafer 1 through the plurality of connecting portions 3, A configuration in which the entire outer periphery is connected to the piezoelectric element wafer 1 can also be adopted.

  Next, a piezoelectric element wafer 1 in which the piezoelectric elements 2 are integrally formed, and a flat wafer base having a bonding member 6 such as a conductive adhesive or a metal brazing material disposed in advance in a region where the piezoelectric elements 2 are to be mounted. In order to position the substrate 5 so that the piezoelectric elements 2 are positioned so that the piezoelectric element 2 is positioned in the region to be mounted on the base substrate 5 and to face each other, and to weld or cure the bonding member 6 in this state Necessary processes such as heating are appropriately performed, and the piezoelectric element 2 is bonded to the base substrate 5 through the bonding member 6 (step 2).

  The positioning of the piezoelectric element wafer 1 and the base substrate 5 is a so-called “pin alignment” in which positioning is performed by providing pins on one of them and engaging them with holes provided on the other. This is performed by image recognition using a camera.

  Further, the bonding of the piezoelectric element 2 to the base substrate 5 is not necessarily performed through the bonding member 6, and other means may be used as long as the piezoelectric element 2 and the base substrate 5 can be mechanically connected. Regardless, for example, a form in which the piezoelectric element 2 is directly bonded to the base substrate 5 by surface activated bonding may be employed.

  Further, the base substrate 5 does not have to be in the form of a wafer, and individual pieces that are cut in advance for each product region may be aligned on an alignment tray, and the piezoelectric element wafer 1 may be abutted there. .

  Here, the mounting of the piezoelectric element 2 on the base substrate 5 is performed in the wafer state without separating the piezoelectric element 2 from the piezoelectric element wafer 1, so that the piezoelectric element 2 is separated from the piezoelectric element wafer 1 as in the past. Thus, the step of once aligning with the alignment tray 4 and further transferring from there to the base substrate 5 is omitted.

  In addition, since the piezoelectric element 2 is formed in the piezoelectric element wafer 1 with high positional accuracy using a microfabrication technique such as photolithography, the base substrate 5 is left as it is without separating the piezoelectric element 2 from the piezoelectric element wafer 1. The piezoelectric element 2 can be mounted on the base substrate 5 while maintaining its high positional accuracy.

  Next, a laser irradiation or mechanical pressure is applied to the connecting portion 3 between the piezoelectric element 2 and the piezoelectric element wafer 1 to cut or break the connecting portion 3 to separate the piezoelectric element 2 from the piezoelectric element wafer 1 (step) 3).

  As other methods for separating the piezoelectric element 2 from the piezoelectric element wafer 1, dicing, etching, sandblasting, or the like can be selected as appropriate.

  Next, the piezoelectric element wafer 1 in the region excluding the piezoelectric element 2 that has become unnecessary due to the separation of the piezoelectric element 2 is separated from the base substrate 5 by vacuum suction, a gripping jig (robot hand) or the like, and then the base substrate 5 Remove from above (step 4).

  Here, if vacuum suction is used as means for removing the piezoelectric element wafer 1 from the base substrate 5, cutting waste generated when the piezoelectric element 2 is separated from the piezoelectric element wafer 1 can be removed at the same time.

  As a subsequent process, a wafer-like lid member (not shown) in which a plurality of recesses for individually accommodating each piezoelectric element 2 is integrally formed on the surface of the base substrate 5 on which the piezoelectric element 2 is mounted. After that, the joined body of the base substrate 5 and the lid member is cut into individual parts by dicing or the like to obtain individual piezoelectric devices as shown in FIG.

  The base substrate 5 and the lid member need not be separated into pieces after being bonded together in the wafer state as described above, for example, before the lid member 7 is bonded to the base substrate 5 in advance. The base substrate 5 and the lid member 7 may be individually separated, and the separated base substrate 5 and the lid member 7 may be joined.

  FIG. 3 is a perspective view schematically showing a method for manufacturing a piezoelectric device in one embodiment of the present invention. In the first embodiment, after the piezoelectric element 2 is bonded to the base substrate 5, the piezoelectric element 2 is once separated from the piezoelectric element wafer 1, and then the piezoelectric element wafer 1 in a region excluding the piezoelectric element 2 is placed on the base substrate 5. On the other hand, in the second embodiment, after the piezoelectric element 2 is bonded to the base substrate 5, the piezoelectric element 2 is separated from the piezoelectric element wafer 1 and at the same time, the piezoelectric element in the region excluding the piezoelectric element 2 is removed. The wafer 1 is removed from the base substrate 5. Specifically, first, similarly to the first embodiment, the step of integrally forming the piezoelectric element 2 in the piezoelectric element wafer 1 and the piezoelectric element wafer 1 in which the piezoelectric element 2 is integrally formed are used as the base substrate 5. The steps of joining the piezoelectric element 2 to the base substrate 5 are sequentially performed.

  Thereafter, the piezoelectric element 2 is appropriately pressed against the base substrate 5 side by contacting a jig (not shown) only from above with the piezoelectric element 2 as necessary, and the region excluding the piezoelectric element 2 is then pressed. The piezoelectric element wafer 1 is separated from the base substrate 5 by vacuum suction, a gripping jig (robot hand), or the like, and the connecting portion 3 between the piezoelectric element 2 and the piezoelectric element wafer 1 is broken by the shearing stress generated thereby. Is removed from the piezoelectric element wafer 1, and at the same time, the piezoelectric element wafer 1 except for the piezoelectric element 2 is removed from the base substrate 5. The subsequent steps are the same as in the first embodiment.

  In the second embodiment, the piezoelectric element 2 is separated from the piezoelectric element wafer 1 and at the same time, the piezoelectric element wafer 1 except for the piezoelectric element 2 is removed from the base substrate 5. The process can be simplified rather than performing the processes separately.

  When the bonding force of the piezoelectric element 2 to the base substrate 5 is sufficiently large, the piezoelectric element 2 is not necessarily pressed to the base substrate 5 side with a jig or the like when the piezoelectric element wafer 1 is separated from the base substrate 5. There is no need to keep it.

  If the bonding position of the piezoelectric element 2 does not shift due to the pressure when the piezoelectric element wafer 1 is separated from the base substrate 5, the step of separating the piezoelectric element wafer 1 from the base substrate 5 is performed on the basis of the piezoelectric element 2. When the joining member 6 is used for joining the substrate 5 completely, that is, when the joining member 6 is used for joining the piezoelectric element 2, the joining member 6 is completely welded or cured, and then the piezoelectric element 2 is attached to the base substrate 5. You may make it completely join.

  Further, in order to facilitate separation of the piezoelectric element 2 from the piezoelectric element wafer 1, the connecting portion 3 between the piezoelectric element 2 and the piezoelectric element wafer 1 is previously diced before the step of separating the piezoelectric element wafer 1 from the base substrate 5. The piezoelectric element 2 is processed by etching, laser, etc. so that it can be easily separated from the piezoelectric element wafer 1 (formation of grooves and through holes), or modified (weakened) so as to be easily broken. May be.

  As a modification of the second embodiment, the process of separating the piezoelectric element 2 from the piezoelectric element wafer 1 and simultaneously removing the piezoelectric element wafer 1 in the region excluding the piezoelectric element 2 from the base substrate 5 is replaced with the following process. May be. That is, after bonding the piezoelectric element 2 to the base substrate 5 in the wafer state, the entire region of the piezoelectric element wafer 1 is etched after protecting the formation region of the piezoelectric element 2 with the resist layer, and the region not covered with the resist layer The piezoelectric element wafer 1 is dissolved and disappeared, whereby the piezoelectric element 2 is separated from the piezoelectric element wafer 1 and at the same time, the piezoelectric element wafer 1 except for the piezoelectric element 2 is removed from the base substrate 5.

  In this modification, there is no possibility that the piezoelectric element 2 and the piezoelectric element wafer 1 are forcibly separated from each other, so that there is no possibility that the piezoelectric element 2 is displaced, detached, or defectively cut (cracked).

  Although the present invention has been described with reference to the examples, the present invention is not limited to the contents of the examples, and various modifications can be made without departing from the gist of the present invention. For example, a plurality of piezoelectric elements 2 do not have to be formed in the piezoelectric element wafer 1, and at least one piezoelectric element 2 may be formed. The material of the piezoelectric element 2 is not limited to quartz, and other various materials can be selected as appropriate. In addition, the piezoelectric element wafer 1 and the base substrate 5 are preferably flat in shape for ease of bonding, but other shapes can be used as long as they can be physically bonded. It doesn't matter.

DESCRIPTION OF SYMBOLS 1 Piezoelectric element wafer 2 Piezoelectric element 3 Connection part 4 Tray for alignment 4a Element storage recessed part 5 Base substrate 6 Bonding member 7 Lid member

Claims (2)

A method of manufacturing a piezoelectric device having a piezoelectric element mounted on a base substrate,
Forming the piezoelectric element integrally in a piezoelectric element wafer made of a piezoelectric material;
Bonding the piezoelectric element integrally formed in the piezoelectric element wafer to the base substrate in a wafer state;
Separating the piezoelectric element bonded to the base substrate from the piezoelectric element wafer;
Have a, a step of removing the piezoelectric device wafer areas except the piezoelectric element bonded to the base substrate,
In the step of separating the piezoelectric element from the piezoelectric element wafer, the piezoelectric element bonded to the base substrate is pressed against the base substrate side, and the region excluding the piezoelectric element bonded to the base substrate is removed. The piezoelectric element wafer and the base substrate are relatively separated from each other to generate a stress at a connecting portion between the piezoelectric element and the piezoelectric element wafer, and the connecting portion is broken by the stress to cause the piezoelectric element to move to the piezoelectric A method for manufacturing a piezoelectric device, characterized in that the piezoelectric element wafer is removed simultaneously with separation from the element wafer . Method for manufacturing a piezoelectric device according to claim 1, wherein the dividing wolfberry take before Symbol piezoelectric device wafer by vacuum suction.

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