JP5732224B2 - Reduced electroless silver plating solution - Google Patents
Reduced electroless silver plating solution Download PDFInfo
- Publication number
- JP5732224B2 JP5732224B2 JP2010226919A JP2010226919A JP5732224B2 JP 5732224 B2 JP5732224 B2 JP 5732224B2 JP 2010226919 A JP2010226919 A JP 2010226919A JP 2010226919 A JP2010226919 A JP 2010226919A JP 5732224 B2 JP5732224 B2 JP 5732224B2
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- JP
- Japan
- Prior art keywords
- plating solution
- silver
- compound
- plating
- silver plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000007747 plating Methods 0.000 title claims description 151
- 229910052709 silver Inorganic materials 0.000 title claims description 80
- 239000004332 silver Substances 0.000 title claims description 80
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims description 75
- 150000001875 compounds Chemical class 0.000 claims description 57
- 239000007788 liquid Substances 0.000 claims description 19
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 13
- 229910052740 iodine Inorganic materials 0.000 claims description 13
- 239000011630 iodine Substances 0.000 claims description 13
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 12
- 229940100890 silver compound Drugs 0.000 claims description 12
- 150000003379 silver compounds Chemical class 0.000 claims description 12
- 239000011593 sulfur Substances 0.000 claims description 12
- 229910052717 sulfur Inorganic materials 0.000 claims description 12
- 239000003638 chemical reducing agent Substances 0.000 claims description 10
- 239000003381 stabilizer Substances 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- JBHHRZZRNDRGMY-UHFFFAOYSA-N Cl.C(C1=CC=CC=C1)NCCNCCN Chemical compound Cl.C(C1=CC=CC=C1)NCCNCCN JBHHRZZRNDRGMY-UHFFFAOYSA-N 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 103
- -1 cyanide compound Chemical class 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000000354 decomposition reaction Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000008139 complexing agent Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- 229910001961 silver nitrate Inorganic materials 0.000 description 3
- GBBZLMLLFVFKJM-UHFFFAOYSA-N 1,2-diiodoethane Chemical compound ICCI GBBZLMLLFVFKJM-UHFFFAOYSA-N 0.000 description 2
- MOMFXATYAINJML-UHFFFAOYSA-N 2-Acetylthiazole Chemical compound CC(=O)C1=NC=CS1 MOMFXATYAINJML-UHFFFAOYSA-N 0.000 description 2
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- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- KQJQICVXLJTWQD-UHFFFAOYSA-N N-Methylthiourea Chemical compound CNC(N)=S KQJQICVXLJTWQD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- NZZFYRREKKOMAT-UHFFFAOYSA-N diiodomethane Chemical compound ICI NZZFYRREKKOMAT-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 description 2
- 229910000367 silver sulfate Inorganic materials 0.000 description 2
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 2
- 239000001356 (3R)-3-sulfanylbutan-2-one Substances 0.000 description 1
- 239000001082 (3R)-3-sulfanylpentan-2-one Substances 0.000 description 1
- VXLFMCZPFIKKDZ-UHFFFAOYSA-N (4-methylphenyl)thiourea Chemical compound CC1=CC=C(NC(N)=S)C=C1 VXLFMCZPFIKKDZ-UHFFFAOYSA-N 0.000 description 1
- JAEZSIYNWDWMMN-UHFFFAOYSA-N 1,1,3-trimethylthiourea Chemical compound CNC(=S)N(C)C JAEZSIYNWDWMMN-UHFFFAOYSA-N 0.000 description 1
- FPZXQVCYHDMIIA-UHFFFAOYSA-N 1,1-diphenylthiourea Chemical compound C=1C=CC=CC=1N(C(=S)N)C1=CC=CC=C1 FPZXQVCYHDMIIA-UHFFFAOYSA-N 0.000 description 1
- BCAGFJXMCZSAHD-UHFFFAOYSA-N 1,2-bis(2-iodoethoxy)ethane Chemical compound ICCOCCOCCI BCAGFJXMCZSAHD-UHFFFAOYSA-N 0.000 description 1
- LWBZAWFABLYPDP-UHFFFAOYSA-N 1,2-dihydrotriazole-5-thione;sodium Chemical compound [Na].S=C1C=NNN1 LWBZAWFABLYPDP-UHFFFAOYSA-N 0.000 description 1
- JYSUYJCLUODSLN-UHFFFAOYSA-N 1,3-benzothiazol-2-ylhydrazine Chemical compound C1=CC=C2SC(NN)=NC2=C1 JYSUYJCLUODSLN-UHFFFAOYSA-N 0.000 description 1
- MGQNWXQDRBNDQI-UHFFFAOYSA-N 1,3-dibutylthiourea;1,3-diethylthiourea Chemical compound CCNC(=S)NCC.CCCCNC(=S)NCCCC MGQNWXQDRBNDQI-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- ZXSQEZNORDWBGZ-UHFFFAOYSA-N 1,3-dihydropyrrolo[2,3-b]pyridin-2-one Chemical compound C1=CN=C2NC(=O)CC2=C1 ZXSQEZNORDWBGZ-UHFFFAOYSA-N 0.000 description 1
- XHRFDEOAZQGXMM-UHFFFAOYSA-N 1,3-diiodo-5-methoxybenzene Chemical compound COC1=CC(I)=CC(I)=C1 XHRFDEOAZQGXMM-UHFFFAOYSA-N 0.000 description 1
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- BTUGGGLMQBJCBN-UHFFFAOYSA-N 1-iodo-2-methylpropane Chemical compound CC(C)CI BTUGGGLMQBJCBN-UHFFFAOYSA-N 0.000 description 1
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- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 description 1
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- MVVGSPCXHRFDDR-UHFFFAOYSA-N 2-(1,3-benzothiazol-2-yl)phenol Chemical compound OC1=CC=CC=C1C1=NC2=CC=CC=C2S1 MVVGSPCXHRFDDR-UHFFFAOYSA-N 0.000 description 1
- ZRXNLCFJIKBZCA-UHFFFAOYSA-N 2-(1,3-benzothiazol-2-ylmethyl)-1,3-benzothiazole Chemical compound C1=CC=C2SC(CC=3SC4=CC=CC=C4N=3)=NC2=C1 ZRXNLCFJIKBZCA-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
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- 239000012811 non-conductive material Substances 0.000 description 1
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- 239000004033 plastic Substances 0.000 description 1
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- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- XPVDFJPXADVZEN-UHFFFAOYSA-N propan-2-yl 3-sulfanylpropanoate Chemical compound CC(C)OC(=O)CCS XPVDFJPXADVZEN-UHFFFAOYSA-N 0.000 description 1
- WHMDPDGBKYUEMW-UHFFFAOYSA-N pyridine-2-thiol Chemical compound SC1=CC=CC=N1 WHMDPDGBKYUEMW-UHFFFAOYSA-N 0.000 description 1
- HBCQSNAFLVXVAY-UHFFFAOYSA-N pyrimidine-2-thiol Chemical compound SC1=NC=CC=N1 HBCQSNAFLVXVAY-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000028043 self proteolysis Effects 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- 229910001958 silver carbonate Inorganic materials 0.000 description 1
- LKZMBDSASOBTPN-UHFFFAOYSA-L silver carbonate Substances [Ag].[O-]C([O-])=O LKZMBDSASOBTPN-UHFFFAOYSA-L 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- XNGYKPINNDWGGF-UHFFFAOYSA-L silver oxalate Chemical compound [Ag+].[Ag+].[O-]C(=O)C([O-])=O XNGYKPINNDWGGF-UHFFFAOYSA-L 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- WYCFMBAHFPUBDS-UHFFFAOYSA-L silver sulfite Chemical compound [Ag+].[Ag+].[O-]S([O-])=O WYCFMBAHFPUBDS-UHFFFAOYSA-L 0.000 description 1
- LMEWRZSPCQHBOB-UHFFFAOYSA-M silver;2-hydroxypropanoate Chemical compound [Ag+].CC(O)C([O-])=O LMEWRZSPCQHBOB-UHFFFAOYSA-M 0.000 description 1
- TZMGLOFLKLBEFW-UHFFFAOYSA-M silver;sulfamate Chemical compound [Ag+].NS([O-])(=O)=O TZMGLOFLKLBEFW-UHFFFAOYSA-M 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- FRTIVUOKBXDGPD-UHFFFAOYSA-M sodium;3-sulfanylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CCCS FRTIVUOKBXDGPD-UHFFFAOYSA-M 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229960002317 succinimide Drugs 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Landscapes
- Chemically Coating (AREA)
Description
本発明は、還元型無電解銀めっき液に関し、特に、シアン化合物を含まないめっき液において液安定性の優れた還元型無電解銀めっき液に関する。 The present invention relates to a reduced electroless silver plating solution, and more particularly to a reduced electroless silver plating solution having excellent solution stability in a plating solution not containing a cyanide compound.
銀めっきは、古くは装飾用等に用いられており、近年ではその電気特性や高い反射率を活かして、電気工業分野や光学工業分野、その他電磁波シールドや滅菌コート等の分野においても多く用いられている。そのなかでも、無電解銀めっきは、膜厚のコントロールが可能であり、必要な銀膜厚を容易に生成できるという点において多用されている。 Silver plating has been used for decorative purposes in the past, and in recent years it has been widely used in the fields of electrical industry, optical industry, other electromagnetic shielding, sterilization coating, etc., taking advantage of its electrical properties and high reflectance. ing. Among them, electroless silver plating is widely used in that the film thickness can be controlled and a necessary silver film thickness can be easily generated.
無電解銀めっきは、置換型と還元型に大別される。置換型無電解銀めっきは、めっき液としては比較的安定性に優れており、市場でも多く利用されている(例えば特許文献1及び2参照)。しかしながら、置換型無電解銀めっきは、素地金属との置換反応によって銀めっきを析出させるものであるため、下地素地に制限があるという問題がある。 Electroless silver plating is roughly divided into a substitution type and a reduction type. Substitutional electroless silver plating is relatively excellent as a plating solution, and is widely used in the market (see, for example, Patent Documents 1 and 2). However, substitutional electroless silver plating has a problem that the base substrate is limited because silver plating is deposited by a substitution reaction with the base metal.
一方で、還元型無電解銀めっきは、めっき液中に還元剤を含有させ、水溶性銀化合物を金属銀に還元することによって、下地金属上に銀めっきを析出させるものであり、下地素地を荒らすことなく、また下地素地の種類が制限されることなく、良好な銀めっき皮膜を形成することができる。 On the other hand, reduced electroless silver plating is a method in which a reducing agent is contained in a plating solution and a water-soluble silver compound is reduced to metallic silver to deposit silver plating on the underlying metal. A good silver plating film can be formed without roughening and without limiting the type of the base material.
ところが、これまで還元型無電解銀めっき液として報告されている大部分は、シアンを錯体として用いためっき液となっている。近年、地球温暖化や作業環境の改善等が重視されており、シアン化合物を含まない還元型無電解銀めっき液が求められている。 However, most of the reported electroless silver plating solutions have been plating solutions using cyan as a complex. In recent years, there has been an emphasis on global warming, work environment improvement, and the like, and there is a need for a reduced electroless silver plating solution that does not contain a cyanide compound.
しかしながら、環境的な問題を考慮して、還元型の無電解銀めっき液においてシアン化合物を含まない、いわゆるシアンフリー化を検討した場合、めっき液の安定性に問題が生じる。シアン化合物を錯体として含有させない場合、めっき液中の銀化合物が自己分解してしまい、めっき液を長期間に亘って安定的に保持させることができなくなる。 However, in consideration of environmental problems, when a reduction-type electroless silver plating solution that does not contain a cyanide compound, so-called cyan-free, is considered, a problem arises in the stability of the plating solution. When the cyan compound is not contained as a complex, the silver compound in the plating solution is self-decomposed, and the plating solution cannot be stably held for a long period of time.
これまで、シアンフリーのめっき液を安定に保つために、例えば特許文献3又は4に記載されているように、硫黄系化合物やヨウ素系化合物等を添加するという技術が提案され、めっき液の安定性が保たれたという報告はなされているものの、未だ十分な安定性を維持できるレベルまでには至っておらず、シアン化合物含有めっき液以上に量産化・実用化させることは困難となっている状況である。 In the past, in order to keep the cyan-free plating solution stable, for example, as described in Patent Document 3 or 4, a technique of adding a sulfur-based compound or iodine-based compound has been proposed, and the plating solution is stable. Although it has been reported that the stability has been maintained, it has not yet reached a level where sufficient stability can be maintained, and it is difficult to mass-produce and put it to practical use beyond a cyanide-containing plating solution It is.
そこで、本発明は、そのような従来の問題点に鑑みてなされたものであり、シアン化合物を含まない還元型の無電解銀めっき液において、十分な液安定性を有する還元型無電解銀めっき液を提供することを目的とする。 Accordingly, the present invention has been made in view of such a conventional problem, and a reduced electroless silver plating having sufficient liquid stability in a reduced electroless silver plating solution not containing a cyanide compound. The purpose is to provide a liquid.
本発明者らは、上記課題を解決するために鋭意検討を重ねた結果、特定のアミン系化合物を添加することによって、シアンフリーの還元型無電解銀めっき液でも、優れた液安定性が得られることを見出した。 As a result of intensive studies to solve the above problems, the present inventors have obtained excellent liquid stability even with a cyan-free reduced electroless silver plating solution by adding a specific amine compound. I found out that
すなわち、本発明に係る還元型無電解銀めっき液は、水溶性銀化合物と、還元剤と、下記一般式(1)で表される化合物を液安定剤として0.1〜100mg/l含有してなる。 That is, the reduced electroless silver plating solution according to the present invention contains 0.1 to 100 mg / l of a water-soluble silver compound, a reducing agent, and a compound represented by the following general formula (1) as a liquid stabilizer. It becomes.
(式中、Rはアルキル基又はアリール基を表し、m及びnはそれぞれ1〜3の整数である。) (In the formula, R represents an alkyl group or an aryl group, and m and n are each an integer of 1 to 3.)
本発明によれば、シアン化合物を含有させることなく、液安定性に優れた還元型無電解銀めっき液を提供することができる。 According to the present invention, it is possible to provide a reduced electroless silver plating solution having excellent liquid stability without containing a cyanide compound.
以下、本実施の形態に係る還元型無電解銀めっき液について詳細に説明する。本実施の形態に係る還元型無電解銀めっき液は、少なくとも、水溶性銀化合物と、還元剤と、液安定剤とを含有する。 Hereinafter, the reduced electroless silver plating solution according to the present embodiment will be described in detail. The reduced electroless silver plating solution according to the present embodiment contains at least a water-soluble silver compound, a reducing agent, and a liquid stabilizer.
水溶性銀化合物としては、めっき液に可溶性であるものであれば特に限定されないが、例えば硝酸銀、酸化銀、硫酸銀、塩化銀、亜硫酸銀、炭酸銀、酢酸銀、乳酸銀、スルホコハク酸銀、スルホン酸銀、スルファミン酸銀、シュウ酸銀等を用いることができる。これら水溶性銀化合物は、1種単独で又は2種以上を併せて用いることができる。 The water-soluble silver compound is not particularly limited as long as it is soluble in the plating solution. For example, silver nitrate, silver oxide, silver sulfate, silver chloride, silver sulfite, silver carbonate, silver acetate, silver lactate, silver sulfosuccinate, Silver sulfonate, silver sulfamate, silver oxalate and the like can be used. These water-soluble silver compounds can be used alone or in combination of two or more.
水溶性銀化合物の含有量としては、銀濃度として0.1〜30g/lとすることが好ましい。濃度として0.1〜30g/lの範囲とすることにより、銀めっきの析出速度を良好にし、また良好な安定性を有するめっき液とすることができる。 The content of the water-soluble silver compound is preferably 0.1 to 30 g / l as the silver concentration. By setting the concentration in the range of 0.1 to 30 g / l, the deposition rate of silver plating can be improved and a plating solution having good stability can be obtained.
還元剤としては、めっき液中の水溶性銀化合物を金属銀に還元する能力を有するものであって水溶性の化合物であれば特に限定されないが、例えばヒドラジン誘導体、ホルムアルデヒド化合物、ヒドロキシルアミン類、糖類、ロッセル塩、水素化ホウ素化合物、次亜リン酸塩、DMAB、アスコルビン酸等を用いることができる。これら還元剤は、1種単独で又は2種以上を併せて用いることができる。 The reducing agent is not particularly limited as long as it is capable of reducing a water-soluble silver compound in a plating solution to metallic silver and is a water-soluble compound. For example, hydrazine derivatives, formaldehyde compounds, hydroxylamines, saccharides Roselle salt, borohydride compound, hypophosphite, DMAB, ascorbic acid and the like can be used. These reducing agents can be used alone or in combination of two or more.
還元剤の含有量としては、例えば0.1〜30g/lとすることが好ましい。還元剤の含有量が0.1g/lより少ない場合には、めっき液中の水溶性銀化合物を金属銀に還元することができず十分な銀めっきを析出させることができない。一方で、30g/lよりも多すぎると、めっき液の安定性に悪影響を及ぼすとともに経済的にも好ましくない。 As content of a reducing agent, it is preferable to set it as 0.1-30 g / l, for example. When the content of the reducing agent is less than 0.1 g / l, the water-soluble silver compound in the plating solution cannot be reduced to metallic silver and sufficient silver plating cannot be deposited. On the other hand, if it is more than 30 g / l, it adversely affects the stability of the plating solution and is not preferable economically.
また、本実施の形態に係る還元型無電解銀めっき液は、液安定剤として、以下の一般式(1)で表される化合物を含有する。 Further, the reduced electroless silver plating solution according to the present embodiment contains a compound represented by the following general formula (1) as a liquid stabilizer.
ここで、上記一般式(1)中において、Rはアルキル基又はアリール基を表し、m及びnはそれぞれ1〜3の整数である。 Here, in the said General formula (1), R represents an alkyl group or an aryl group, and m and n are an integer of 1-3, respectively.
上記一般式(1)で表される化合物として、より好ましくはCas番号68603−67−8の化合物を用いることができ、例えばベンジルジエチレントリアミンクロライドを挙げることができる。 As the compound represented by the general formula (1), a compound having a Cas number of 68603-67-8 can be more preferably used, and examples thereof include benzyldiethylenetriamine chloride.
この液安定剤の添加量としては、特に限定されないが、例えば0.1〜100mg/lとすることが好ましい。添加量が0.1mg/lより少ない場合には、十分にめっき液の自己分解を抑制させることができず、めっき液の安定性を向上させることができない。一方で、添加量が100mg/lより多い場合には、それ以上液安定性の効果を高めることができず、経済的でない。また、添加量が多すぎるとめっき析出速度を低下させ、所望とする膜厚の銀めっき皮膜を形成させることができなくなる。 The amount of the liquid stabilizer added is not particularly limited, but is preferably 0.1 to 100 mg / l, for example. When the addition amount is less than 0.1 mg / l, the self-decomposition of the plating solution cannot be sufficiently suppressed, and the stability of the plating solution cannot be improved. On the other hand, when the addition amount is more than 100 mg / l, the effect of liquid stability cannot be further increased, which is not economical. Moreover, when there is too much addition amount, a plating deposition rate will fall and it will become impossible to form the silver plating film of the desired film thickness.
このように、本実施の形態に係る還元型無電解液銀めっき液は、液安定剤として、上記一般式(1)で表される化合物を添加する。これにより、本実施の形態に係る還元型無電解液銀めっき液では、めっき液中における銀化合物の自己分解を抑制し、長期間に亘ってめっき液の安定性を維持することができる。 Thus, the reduced electroless liquid silver plating solution according to the present embodiment adds the compound represented by the general formula (1) as a liquid stabilizer. Thereby, in the reduced electroless liquid silver plating solution according to the present embodiment, the self-decomposition of the silver compound in the plating solution can be suppressed, and the stability of the plating solution can be maintained over a long period of time.
この液安定剤によるメカニズムは定かではないが、以下の2種類の働きによって、めっき液を安定に保つことができるものと推測される。すなわち、まず、めっき液中の液安定剤である当該化合物が、カソード(素地)表面に移動することによって、カソード−カチオン間の相互作用によってカソード表面に吸着するようになり、反応場を制限するためにめっき反応が制御され、めっき液を安定に維持することができるものと考えられる。また、当該化合物は、ピラミッド型の立体構造であり、めっき液中における活性で不安定な銀イオンを補足して、銀イオンを安定化することができるため、めっき液の自己分解を抑制することができるものと考えられる。なお、当然、以上の働きがあるため、当該化合物の濃度が高くなると反応場が減少し、さらにめっき液中の活性な銀イオンも極端に低下するためにめっき析出速度は低下し、過剰に添加すると反応が停止する。 Although the mechanism by this liquid stabilizer is not certain, it is presumed that the plating liquid can be kept stable by the following two kinds of actions. That is, first, the compound, which is a liquid stabilizer in the plating solution, moves to the surface of the cathode (substrate), so that it is adsorbed on the cathode surface by the interaction between the cathode and the cation, thereby limiting the reaction field. Therefore, it is considered that the plating reaction is controlled and the plating solution can be stably maintained. In addition, since the compound has a pyramid type three-dimensional structure and can capture active and unstable silver ions in the plating solution and stabilize the silver ions, it suppresses the self-decomposition of the plating solution. Can be considered. Of course, because of the above functions, when the concentration of the compound increases, the reaction field decreases, and the active silver ions in the plating solution also extremely decrease, so the plating deposition rate decreases and is added excessively. Then the reaction stops.
本実施の形態に係る還元型無電解銀めっき液には、さらに含硫黄化合物及び/又は含ヨウ素化合物を添加するようにしてもよい。このように、めっき液中にさらに含硫黄化合物及び/又は含ヨウ素化合物を添加することによって、より一層効果的にめっき液の銀イオンを錯化して、めっき液の安定性をより向上させることができる。 A sulfur-containing compound and / or an iodine-containing compound may be further added to the reduced electroless silver plating solution according to the present embodiment. Thus, by adding a sulfur-containing compound and / or an iodine-containing compound to the plating solution, the silver ions of the plating solution can be more effectively complexed to further improve the stability of the plating solution. it can.
含硫黄化合物としては、特に限定されないが、例えばチオ尿素、メチルチオ尿素、テトラメチルチオ尿素、1−アリル-2チオ尿素、エチレンチオ尿素、1,1−ジフェニル−2−チオ尿素、1,3−ジブチルチオ尿素、1,3−ジエチル−2−チオ尿素、1,3−ジメチルチオ尿素、グアニルチオ尿素、メチルイソチオ尿素硫酸塩、N−ベンゾイルチオ尿素、N−メチルチオ尿素、o−トリルチオ尿素、p−トリルチオ尿素、テトラメチルチオ尿素、トリメチルチオ尿素等のチオ尿素誘導体や、(2−メルカプトエチル)ピラジン、2−メルカプト−1−メチルイミダゾール、2−メルカプト−5−ベンゾイミダゾールカルボン酸、2−メルカプト−5−メトキシベンズイミダゾール、2−メルカプト−5−メトキシベンゾチアゾール、5−メチル−2−ベンゾイミダゾールチオール、2−メルカプト−5−メチルチオ−1,3,4−チアジアゾール、2−メルカプト−5−チアゾリドン、2−メルカプト−6−ニトロベンゾチアゾール、2−メルカプトベンゾイミダゾール、2−メルカプトベンゾチアゾール、2−メルカプトベンゾチアゾール、2−メルカプトエタノール、2−メルカプトニコチン酸、2−メルカプトピリジン、2−メルカプトピリミジン、2−メルカプトチアゾリン、3−アミノ−5−メルカプト−1,2,4−トリアゾール、3−メルカプト−1,2,4−トリアゾール、3−メルカプト−2−ブタノン、3−メルカプト−2−ペンタノン、3−メルカプト−4−メチル−4H−1,2,4−トリアゾール、3−メルカプトイソ酪酸、3−メルカプトプロピオン酸、3−メルカプトプロピオン酸イソプロピル、3−メルカプトプロピオン酸3−メトキシブチル、4,6−ジアミノ−2−メルカプトピリミジン、4,6−ジメチル−2−メルカプトピリミジン、4−アミノ−3−ヒドラジノ−5−メルカプト−1,2,4−トリアゾール、4−メルカプト安息香酸、4−メルカプトピリジン、5−アミノ−2−メルカプトベンゾイミダゾール、5−エトキシ−2−メルカプトベンズイミダゾール、5−メルカプト−(1H)−テトラゾリル酢酸ナトリウム、1H−1,2,3−トリアゾール−5−チオールナトリウム、6−アミノ−2−メルカプトベンゾチアゾール、8−メルカプトキノリン塩酸塩、メルカプト酢酸アンモニウム、ビス(2−メルカプトエチル)エーテル、ビス(2−メルカプトエチル)スルフィド、2−メルカプトプロピオン酸エチル、3−メルカプトプロピオン酸エチル、3−メルカプトプロピオン酸メチル、2−メルカプトエタンスルホン酸ナトリウム、3−メルカプト-1-プロパンスルホン酸ナトリウム、メルカプト酢酸ナトリウム等のメルカプト類や、2,5,6−トリメチルベンゾチアゾール、2,5−ジメチルベンゾチアゾール、2−(2−ヒドロキシフェニル)ベンゾチアゾール、2−(2−チエニル)ベンゾチアゾール、2−(4−メトキシフェニル)ベンゾチアゾール、2−(メチルチオ)ベンゾチアゾール、2−(メチルチオ)ナフト[1,2−d]チアゾール、2−(メチルチオ)チアゾール、2−アセトアミドチアゾール、2−アセチルチアゾール、2−アミノ−4,5−ジメチルチアゾール、2−アミノ−5−メチルチアゾール、2−アミノベンゾチアゾール、2−アミノチアゾール、2−エトキシチアゾール、2−エチルチアゾール、2−エチル−4−メチルチアゾール、2−ヒドラジノベンゾチアゾール、2−ヒドロキシベンゾチアゾール、2(3H)−ベンゾチアゾロン、ベンゾチアゾール、チアゾール、(−)−ベンゾテトラミゾール、1,2−ベンゾイソチアゾール−3(2H)−オン、2,2’−メチレンビスベンゾチアゾール、2,4,5−トリメチルチアゾール、2,4−ジメチルチアゾール等のチアゾール類などを挙げることができる。これら含硫黄化合物は、1種単独で又は2種以上を併せて用いることができる。 Although it does not specifically limit as a sulfur-containing compound, For example, thiourea, methylthiourea, tetramethylthiourea, 1-allyl-2 thiourea, ethylenethiourea, 1,1-diphenyl-2-thiourea, 1,3-dibutylthiourea 1,3-diethyl-2-thiourea, 1,3-dimethylthiourea, guanylthiourea, methylisothiourea sulfate, N-benzoylthiourea, N-methylthiourea, o-tolylthiourea, p-tolylthiourea, tetramethylthio Thiourea derivatives such as urea and trimethylthiourea, (2-mercaptoethyl) pyrazine, 2-mercapto-1-methylimidazole, 2-mercapto-5-benzimidazolecarboxylic acid, 2-mercapto-5-methoxybenzimidazole, 2-mercapto-5-methoxybenzothiazole, 5- Methyl-2-benzimidazolethiol, 2-mercapto-5-methylthio-1,3,4-thiadiazole, 2-mercapto-5-thiazolidone, 2-mercapto-6-nitrobenzothiazole, 2-mercaptobenzimidazole, 2- Mercaptobenzothiazole, 2-mercaptobenzothiazole, 2-mercaptoethanol, 2-mercaptonicotinic acid, 2-mercaptopyridine, 2-mercaptopyrimidine, 2-mercaptothiazoline, 3-amino-5-mercapto-1,2,4- Triazole, 3-mercapto-1,2,4-triazole, 3-mercapto-2-butanone, 3-mercapto-2-pentanone, 3-mercapto-4-methyl-4H-1,2,4-triazole, 3- Mercaptoisobutyric acid, 3-mercaptopropi Acid, isopropyl 3-mercaptopropionate, 3-methoxybutyl 3-mercaptopropionate, 4,6-diamino-2-mercaptopyrimidine, 4,6-dimethyl-2-mercaptopyrimidine, 4-amino-3-hydrazino- 5-mercapto-1,2,4-triazole, 4-mercaptobenzoic acid, 4-mercaptopyridine, 5-amino-2-mercaptobenzimidazole, 5-ethoxy-2-mercaptobenzimidazole, 5-mercapto- (1H) -Sodium tetrazolylacetate, 1H-1,2,3-triazole-5-thiol sodium, 6-amino-2-mercaptobenzothiazole, 8-mercaptoquinoline hydrochloride, mercaptoacetate ammonium, bis (2-mercaptoethyl) ether, Bis (2-mercaptoe L) Mercapto such as sulfide, ethyl 2-mercaptopropionate, ethyl 3-mercaptopropionate, methyl 3-mercaptopropionate, sodium 2-mercaptoethanesulfonate, sodium 3-mercapto-1-propanesulfonate, sodium mercaptoacetate 2,5,6-trimethylbenzothiazole, 2,5-dimethylbenzothiazole, 2- (2-hydroxyphenyl) benzothiazole, 2- (2-thienyl) benzothiazole, 2- (4-methoxyphenyl) Benzothiazole, 2- (methylthio) benzothiazole, 2- (methylthio) naphtho [1,2-d] thiazole, 2- (methylthio) thiazole, 2-acetamidothiazole, 2-acetylthiazole, 2-amino-4,5 -Dimethylthiazole, 2 -Amino-5-methylthiazole, 2-aminobenzothiazole, 2-aminothiazole, 2-ethoxythiazole, 2-ethylthiazole, 2-ethyl-4-methylthiazole, 2-hydrazinobenzothiazole, 2-hydroxybenzothiazole 2 (3H) -benzothiazolone, benzothiazole, thiazole, (−)-benzotetramizole, 1,2-benzisothiazol-3 (2H) -one, 2,2′-methylenebisbenzothiazole, 2,4 , 5-trimethylthiazole, and thiazoles such as 2,4-dimethylthiazole. These sulfur-containing compounds can be used alone or in combination of two or more.
含硫黄化合物の添加量としては、特に限定されないが、例えば0.01〜500mg/lとすることが好ましい。含硫黄化合物の添加量が0.01mg/lより少なすぎると、銀が十分に錯化されないため、めっき液のさらなる安定性向上効果を得ることができなる。一方で、添加量が500mg/lより多すぎると、めっき液の安定性向上効果は奏し得るものの、めっき析出速度が低下して、所定の析出銀量を得るために長時間が必要となり効率的ではない。 Although it does not specifically limit as an addition amount of a sulfur-containing compound, For example, it is preferable to set it as 0.01-500 mg / l. If the addition amount of the sulfur-containing compound is less than 0.01 mg / l, silver is not sufficiently complexed, so that a further stability improvement effect of the plating solution can be obtained. On the other hand, if the addition amount is more than 500 mg / l, the effect of improving the stability of the plating solution can be achieved, but the plating deposition rate is lowered, and it takes a long time to obtain a predetermined amount of precipitated silver, which is efficient. is not.
また、含ヨウ素化合物としては、特に限定されないが、例えばヨウ化カリウム、ヨウ素酸カリウム、ヨウドチロシン、ヨウドメタン、ジヨードメタン、1,2−ジヨードエタン、アセチルヨージド、安息香酸2−ヨードエチル、2−ヨード−2−メチルプロパン、2−ヨードブタン、1,2−ビス(2−ヨードエトキシ)エタン、ジヨードメタン、1,3−ジヨードプロパン、1,2−ジヨードエタン、1,4−ジヨードブタン、1,5−ジヨードペンタン、2−ヨードアセトアミド、1−ヨードブタン、ヨードエタン、1−ヨード−3−メチルブタン、1−ヨードオクタデカン、1−ヨードプロパン、2−ヨードプロパン、3−ヨード-1-プロペン、3−ヨードプロピオン酸、1−ヨード−2−メチルプロパン、2−ヨードエタノール、1−ヨードヘキサデカン、2−ヨードアセトアミド、5−ヨードウラシル、3−ヨードピリジン、4−ヨードピリジン、ヨードベンゼン、5−ヨード−2‐メチルベンズイミダゾール、2−ヨードチオアニゾール、p−ヨードフェノール、1−(ヨードメチル)−ピロリドン、3,5−ジヨードアニゾール、1−ヨード−2−イソプロピルベンゼンなどを挙げることができる。これら含ヨウ素化合物は、1種単独で又は2種以上を併せて用いることができる。 Further, the iodine-containing compound is not particularly limited. For example, potassium iodide, potassium iodate, iodotyrosine, iodomethane, diiodomethane, 1,2-diiodoethane, acetyl iodide, 2-iodoethyl benzoate, and 2-iodo-2. -Methylpropane, 2-iodobutane, 1,2-bis (2-iodoethoxy) ethane, diiodomethane, 1,3-diiodopropane, 1,2-diiodoethane, 1,4-diiodobutane, 1,5-diiodopentane 2-iodoacetamide, 1-iodobutane, iodoethane, 1-iodo-3-methylbutane, 1-iodooctadecane, 1-iodopropane, 2-iodopropane, 3-iodo-1-propene, 3-iodopropionic acid, 1 -Iodo-2-methylpropane, 2-iodoethanol, 1- Hexadecane, 2-iodoacetamide, 5-iodouracil, 3-iodopyridine, 4-iodopyridine, iodobenzene, 5-iodo-2-methylbenzimidazole, 2-iodothioanizole, p-iodophenol, 1- ( Iodomethyl) -pyrrolidone, 3,5-diiodoanisol, 1-iodo-2-isopropylbenzene and the like. These iodine-containing compounds can be used alone or in combination of two or more.
含ヨウ素化合物の添加量としては、特に限定されないが、例えば0.01〜500mg/lとすることが好ましい。含ヨウ素化合物の添加量が0.01mg/lより少なすぎると、めっき液のさらなる安定性向上効果を得ることができない。一方で、添加量が500mg/lより多すぎると、めっき析出速度が低下して、所定の析出銀量を得るために長時間が必要となり効率的ではない。 The amount of the iodine-containing compound added is not particularly limited, but is preferably 0.01 to 500 mg / l, for example. If the amount of the iodine-containing compound added is too small than 0.01 mg / l, a further stability improvement effect of the plating solution cannot be obtained. On the other hand, if the addition amount is more than 500 mg / l, the plating deposition rate is lowered, and it takes a long time to obtain a predetermined amount of precipitated silver, which is not efficient.
また、本実施の形態に係る還元型無電解銀めっき液においては、必要に応じて錯化剤を添加してもよい。錯化剤としては、特に限定されないが、亜硫酸塩、コハク酸イミド、ヒダントイン誘導体、エチレンジアミン、エチレンジアミン四酢酸(EDTA)等を用いることができる。これら錯化剤は、1種単独で又は2種以上を併せて用いることができる。 Further, in the reduced electroless silver plating solution according to the present embodiment, a complexing agent may be added as necessary. Although it does not specifically limit as a complexing agent, A sulfite, a succinimide, a hydantoin derivative, ethylenediamine, ethylenediaminetetraacetic acid (EDTA), etc. can be used. These complexing agents can be used alone or in combination of two or more.
錯化剤の添加量としては、その種類によっても異なり、特に限定的ではないが、1〜100g/l程度とすることが好ましい。錯化剤の濃度をこのような範囲とすることで、銀めっきの析出速度を良好にし、またより一層に良好な安定性を有するめっき液とすることができる。 The addition amount of the complexing agent varies depending on the type and is not particularly limited, but is preferably about 1 to 100 g / l. By setting the concentration of the complexing agent in such a range, the deposition rate of silver plating can be improved, and a plating solution having even better stability can be obtained.
なお、その他、本実施の形態に係る還元型無電解銀めっき液には、上述の成分以外に、必要に応じて公知の界面活性剤、pH調整剤、緩衝剤、平滑剤、応力緩和剤等の添加剤を混合するようにしてもよい。 In addition to the above components, the reduced electroless silver plating solution according to the present embodiment includes known surfactants, pH adjusters, buffering agents, smoothing agents, stress relaxation agents, and the like as necessary. These additives may be mixed.
本実施の形態に係る還元型無電解銀めっき液は、液温として0〜80℃の範囲で用いることができ、特に10〜60℃程度で用いることにより、めっき液の安定性をより一層に良好にすることができる。めっき液の温度が低すぎると、銀の析出速度が遅く所定の銀析出量を得るために長時間が必要となる。一方で、めっき液の温度が高すぎると、自己分解反応による還元剤の損失や、めっき液安定性の低下を引き起こし易くなる。 The reduced electroless silver plating solution according to the present embodiment can be used in the range of 0 to 80 ° C. as the solution temperature. Can be good. If the temperature of the plating solution is too low, the silver deposition rate is slow and a long time is required to obtain a predetermined amount of silver deposition. On the other hand, if the temperature of the plating solution is too high, loss of the reducing agent due to the autolysis reaction and deterioration of the plating solution stability are likely to occur.
また、還元型無電解銀めっき液のpHは、1〜14の範囲で使用することができる。特に、めっき液のpHを6〜13程度とすることによって、めっき液の安定性をより一層に良好にすることができる。めっき液のpH調整は、通常、pHを下げる場合には、水溶性銀塩のアニオン部分と同種のアニオン部分を有する酸、例えば水溶性銀塩として硫酸銀を用いる場合には硫酸、水溶性銀塩として硝酸銀を用いる場合には硝酸を用いて行い、pHを上げる場合には、アルカリ金属水酸化物、アンモニア等を用いて行う。 The pH of the reduced electroless silver plating solution can be used in the range of 1-14. In particular, the stability of the plating solution can be further improved by setting the pH of the plating solution to about 6 to 13. The pH of the plating solution is usually adjusted by lowering the pH by using an acid having an anion portion of the same kind as the water-soluble silver salt, for example, sulfuric acid or water-soluble silver when silver sulfate is used as the water-soluble silver salt. When silver nitrate is used as the salt, nitric acid is used, and when raising the pH, alkali metal hydroxide, ammonia or the like is used.
本実施の形態に係る還元型無電解銀めっき液を用いためっき処理方法としては、例えば上述した液温、及びpH値に調節しためっき液中に、被めっき物を浸漬して処理する。また、噴霧、塗布等することによってめっき液を被めっき物に対して接触させるようにしてもよい。 As a plating method using the reduced electroless silver plating solution according to the present embodiment, for example, an object to be plated is immersed in the plating solution adjusted to the above-described solution temperature and pH value. Moreover, you may make it contact a plating solution with respect to a to-be-plated object by spraying, application | coating, etc.
無電解銀めっき皮膜を形成させる被めっき物としては、特に限定されるものではなく、金属材料やその他の各種の導電性材料、非導電性材料を被めっき物とすることができる。金属材料を被めっき物とする場合には、常法に従って脱脂処理等の前処理を行った後、被めっき物を直接めっき液中に浸漬する。 The object to be plated on which the electroless silver plating film is formed is not particularly limited, and a metal material, other various conductive materials, and non-conductive materials can be used as the objects to be plated. When a metal material is to be plated, after pretreatment such as degreasing is performed according to a conventional method, the plated object is directly immersed in a plating solution.
また、セラミックス、プラスチックス等の非金属材料にめっき処理を行うには、脱脂処理等の前処理を行った後、被めっき物を活性化処理し、その後めっき液に浸漬する。活性化処理は、常法に従えばよく、例えばパラジウム触媒(キャタリスト−アクセラレーター法、センシタイズ−アクチベーター法等)、銀触媒、銅触媒等を用いて、公知の条件に従って、活性化処理を行う。 Further, in order to perform plating treatment on non-metallic materials such as ceramics and plastics, after pretreatment such as degreasing treatment, the object to be plated is activated, and then immersed in a plating solution. The activation treatment may be performed according to a conventional method, for example, using a palladium catalyst (a catalyst-accelerator method, a sensitizing-activator method, etc.), a silver catalyst, a copper catalyst, or the like according to known conditions. Do.
以下、本発明の具体的な実施例について説明する。なお、下記のいずれかの実施例に本発明の範囲が限定されるものではない。 Hereinafter, specific examples of the present invention will be described. Note that the scope of the present invention is not limited to any of the following examples.
(実施例)
硝酸銀を銀濃度として2.0g/l、還元剤としてのヒドラジン5.0g/l、錯化剤としてのEDTA50g/l、及び液安定剤として下記一般式(1)に示す化合物50mg/lを含有する水溶液に水酸化カリウムを用いてpH8.0とし、還元型無電解銀めっき液を調製した。なお、実施例1〜36では、上記一般式(1)中のR、m、nをそれぞれ下記表2に示すようにした化合物を添加した。
(Example)
Contains 2.0 g / l of silver nitrate as silver concentration, 5.0 g / l of hydrazine as a reducing agent, 50 g / l of EDTA as a complexing agent, and 50 mg / l of a compound represented by the following general formula (1) as a liquid stabilizer A reduced electroless silver plating solution was prepared by adjusting the pH of the aqueous solution to 8.0 using potassium hydroxide. In Examples 1 to 36, compounds in which R, m, and n in the general formula (1) are as shown in Table 2 below were added.
BGA基板(上村工業株式会社製)を被めっき物として用い、上述の還元型無電解銀めっき液によるめっき処理に先立ち、前処理として下記表1に示す各工程を順に行った。すなわち、被めっき物であるBGA基板に対して、ACL−738(上村工業株式会社製)によるクリーナー処理(脱脂)後、100g/Lの過硫酸ナトリウム溶液(SPS)にてソフトエッチング処理を行った。続いて、10%硫酸(H2SO4)溶液でエッチング残渣を除去し(酸洗)、3%硫酸溶液でプリディップ処理後、MNK−4(上村工業株式会社製)でPd触媒を付与(キャタリスト)した。そして、その後、無電解ニッケル液NPR−4(上村工業株式会社製)を用いて下地となるニッケルめっき皮膜を形成させた。 Using a BGA substrate (manufactured by Uemura Kogyo Co., Ltd.) as an object to be plated, each step shown in Table 1 below was sequentially performed as a pretreatment prior to the plating treatment with the above-described reduced electroless silver plating solution. That is, the BGA substrate as the object to be plated was subjected to a soft etching process with a 100 g / L sodium persulfate solution (SPS) after a cleaner process (degreasing) with ACL-738 (manufactured by Uemura Kogyo Co., Ltd.). . Subsequently, the etching residue is removed with a 10% sulfuric acid (H 2 SO 4 ) solution (pickling), a pre-dip treatment is performed with a 3% sulfuric acid solution, and then a Pd catalyst is applied with MNK-4 (manufactured by Uemura Kogyo Co., Ltd.) (Catalist). And the nickel plating film | membrane used as a foundation | substrate was formed after that using electroless nickel liquid NPR-4 (made by Uemura Kogyo Co., Ltd.).
この前処理を行った後、被めっき物を上述の還元型無電解銀めっき液に浸漬し、60℃で20分無電解めっき処理を行った。 After performing this pretreatment, the object to be plated was immersed in the above-described reduced electroless silver plating solution and subjected to electroless plating at 60 ° C. for 20 minutes.
めっき処理を行った後、60℃で100時間昇温放置し、めっき液の自己分解の有無でめっき液の安定性を評価した。 After performing the plating treatment, the temperature was allowed to stand at 60 ° C. for 100 hours, and the stability of the plating solution was evaluated by the presence or absence of self-decomposition of the plating solution.
(比較例)
比較例1では、上記一般式(1)に示す化合物を添加しなかったこと以外は、実施例と同様にして還元型無電解銀めっき液を調整して前処理工程を行った後にめっき処理を施し、60℃で100時間昇温放置した後のめっき液の安定性を評価した。
(Comparative example)
In Comparative Example 1, except that the compound represented by the general formula (1) was not added, the reduced electroless silver plating solution was prepared and the pretreatment step was performed in the same manner as in the example, and then the plating treatment was performed. The stability of the plating solution after being allowed to stand at 60 ° C. for 100 hours was evaluated.
表2に、実施例において添加した液安定剤としての一般式(1)に示す化合物及びその添加量、並びに実施例及び比較例のめっき液の安定性評価結果を示す。 In Table 2, the compound shown to General formula (1) as a liquid stabilizer added in the Example, its addition amount, and the stability evaluation result of the plating solution of an Example and a comparative example are shown.
表2に示されるように、上記一般式(1)に示す化合物を添加した場合(実施例1〜36)には、めっき液の自己分解が起こらず、めっき液は安定した状態を維持していた。また、これら実施例で用いた還元型無電解銀めっき液では、下地ニッケルめっき皮膜上にムラを形成させることなく、良好な銀めっき皮膜を形成させることができた。 As shown in Table 2, when the compound represented by the general formula (1) was added (Examples 1 to 36), the plating solution did not self-decompose and the plating solution maintained a stable state. It was. Moreover, with the reduced electroless silver plating solution used in these Examples, a good silver plating film could be formed without forming unevenness on the underlying nickel plating film.
一方で、一般式(1)に示す化合物を添加しなかった比較例1では、めっき液の自己分解が起こってしまい、めっき液を安定的に保つことはできなかった。また、下地ニッケルめっき皮膜上の全体に銀めっきが析出されず、局所的にムラのある銀めっき皮膜となってしまった。 On the other hand, in Comparative Example 1 in which the compound represented by the general formula (1) was not added, the plating solution self-decomposed, and the plating solution could not be kept stable. In addition, silver plating was not deposited on the entire surface of the underlying nickel plating film, resulting in a locally uneven silver plating film.
次に、上述の実施例のように、一般式(1)に示す化合物を添加した還元型無電解銀めっき液に、さらに含硫黄化合物及び/又は含ヨウ素化合物を添加し、実施例1〜36と同様に前処理工程を行った後にめっき処理を施し、60℃で100時間昇温放置した後のめっき液の安定性を評価した。 Next, a sulfur-containing compound and / or an iodine-containing compound is further added to the reduced electroless silver plating solution to which the compound represented by the general formula (1) is added as in the above-described Examples, and Examples 1-36 In the same manner as described above, the plating treatment was performed after the pretreatment step, and the stability of the plating solution after being allowed to stand at 60 ° C. for 100 hours was evaluated.
また、上述の比較例1の還元型無電解銀めっき液に、さらに含硫黄化合物及び/又は含ヨウ素化合物を添加し、実施例1〜36と同様に前処理工程を行った後にめっき処理を施し、60℃で100時間昇温放置した後のめっき液の安定性を評価した。すなわち、この実験では、一般式(1)に示す化合物を添加せずに、含硫黄化合物及び/又は含ヨウ素化合物のみを添加した場合におけるめっき液の安定性について調べた。 In addition, a sulfur-containing compound and / or an iodine-containing compound is further added to the reduced electroless silver plating solution of Comparative Example 1 described above, and after performing the pretreatment step in the same manner as in Examples 1-36, the plating treatment is performed. The stability of the plating solution after being allowed to stand at 60 ° C. for 100 hours was evaluated. That is, in this experiment, the stability of the plating solution when only the sulfur-containing compound and / or iodine-containing compound was added without adding the compound represented by the general formula (1) was examined.
表3A及び表3Bに、それぞれの評価結果を示す。なお、表中の「○」は自己分解せずめっき液が安定であったことを示し、「×」は自己分解してしまいめっき液の安定を維持できなかったことを示す。 Each evaluation result is shown in Table 3A and Table 3B. In the table, “◯” indicates that the plating solution was stable without self-decomposition, and “x” indicates that the plating solution was not stable due to self-decomposition.
表3A及び表3Bに示されるように、上記一般式(1)に示す化合物を添加しためっき液では、いずれの含硫黄化合物や含ヨウ素化合物をさらに添加した場合でも、自己分解せずにめっき液は安定した状態を維持した。また、これら実施例で用いた還元型無電解銀めっき液では、下地ニッケルめっき皮膜上にムラを形成させることなく、良好な銀めっき皮膜を形成させることができた。 As shown in Table 3A and Table 3B, in the plating solution to which the compound represented by the general formula (1) is added, even when any sulfur-containing compound or iodine-containing compound is further added, the plating solution does not self-decompose. Remained stable. Moreover, with the reduced electroless silver plating solution used in these Examples, a good silver plating film could be formed without forming unevenness on the underlying nickel plating film.
一方で、上記一般式(1)に示す化合物を添加せずに、含硫黄化合物や含ヨウ素化合物のみを添加しためっき液では、めっき液中において自己分解が生じてしまい、長期間に亘ってめっき液を安定的に保つことはできなかった。また、下地ニッケルめっき皮膜上の全体に銀めっきが析出されず、局所的にムラのある銀めっき皮膜となってしまった。 On the other hand, in the plating solution in which only the sulfur-containing compound or iodine-containing compound is added without adding the compound represented by the general formula (1), self-decomposition occurs in the plating solution, and plating is performed over a long period of time. The liquid could not be kept stable. In addition, silver plating was not deposited on the entire surface of the underlying nickel plating film, resulting in a locally uneven silver plating film.
次に、上記一般式(1)に示す化合物として、ベンジルエチレントリアミンクロライドを用い(実施例25と同様のめっき液)、当該ベンジルエチレントリアミンクロライドの添加量を変えて、めっき液の安定性を評価するとともに、形成された銀めっき皮膜の膜厚を調べた。 Next, benzylethylenetriamine chloride is used as the compound represented by the general formula (1) (the same plating solution as in Example 25), and the addition amount of the benzylethylenetriamine chloride is changed to evaluate the stability of the plating solution. In addition, the film thickness of the formed silver plating film was examined.
実験方法は、上述の実施例25において添加した化合物を、添加量として0.1mg/l、10mg/l、100mg/l、1500mg/lのそれぞれの場合で添加することによって、実施例25と同様にして還元型無電解銀めっき液を調整し、前処理工程を行った後にめっき処理を施し、60℃で1時間及び60℃で100時間昇温放置した後のめっき液の安定性を評価した。また、めっき処理後に形成された銀めっき皮膜の膜厚(Ag膜厚)を測定した。なお、銀めっき膜厚は、蛍光X線膜厚計(SFT9550 エスアイアイ・ナノテクノロジー株式会社製)を用いて測定した。表4に、評価結果を示す。 The experimental method was the same as in Example 25 by adding the compound added in Example 25 described above in each case of 0.1 mg / l, 10 mg / l, 100 mg / l, and 1500 mg / l as the addition amount. The reduced electroless silver plating solution was prepared, and after performing the pretreatment step, the plating treatment was performed, and the stability of the plating solution after being allowed to stand at 60 ° C. for 1 hour and at 60 ° C. for 100 hours was evaluated. . Moreover, the film thickness (Ag film thickness) of the silver plating film formed after the plating treatment was measured. The silver plating film thickness was measured using a fluorescent X-ray film thickness meter (SFT 9550, manufactured by SII Nano Technology Co., Ltd.). Table 4 shows the evaluation results.
表4に示されるように、上記一般式(1)に示す化合物であるベンジルエチレントリアミンクロライドをいずれの量で添加した場合においても、めっき液中の銀の自己分解は起こらず、長期間に亘ってめっき液を安定に保つことができた。 As shown in Table 4, even when benzylethylenetriamine chloride, which is a compound represented by the above general formula (1), is added in any amount, no self-decomposition of silver in the plating solution occurs and it takes a long time. The plating solution could be kept stable.
一方、形成された銀めっき皮膜の膜厚の点においては、添加量を多くするに従って薄くなり、1500mg/l添加した場合には、めっき皮膜は形成されなかった。このことは、一般式(1)に示す化合物の添加量が多すぎる場合には、めっき液中における当該化合物の濃度が高くなることによって、水溶性銀化合物の反応場が減少するとともに、めっき液中の活性な銀イオンが極端に低下してしまうため、めっき析出速度が低下し反応が停止してしまったものと考えられる。 On the other hand, in terms of the film thickness of the formed silver plating film, it became thinner as the addition amount was increased, and when 1500 mg / l was added, no plating film was formed. This is because when the amount of the compound represented by the general formula (1) is too large, the concentration of the compound in the plating solution is increased, so that the reaction field of the water-soluble silver compound is reduced, and the plating solution It is considered that the active silver ions in the medium are extremely lowered, so that the plating deposition rate is lowered and the reaction is stopped.
以上の結果から明らかなように、還元型無電解銀めっき液に、上記一般式(1)に示す化合物を添加することにより、めっき液中における銀の自己分解を抑制し、長期間に亘って優れた安定性を有するめっき液とすることができることが分かった。また、上記一般式(1)に示す化合物の添加量としては、好ましくは0.1〜100mg/l程度とすることにより、優れた液安定性のもと、良好な銀めっき皮膜を形成できることが分かった。 As is clear from the above results, by adding the compound represented by the general formula (1) to the reduced electroless silver plating solution, the self-decomposition of silver in the plating solution is suppressed, and over a long period of time. It turned out that it can be set as the plating solution which has the outstanding stability. The amount of the compound represented by the general formula (1) is preferably about 0.1 to 100 mg / l, whereby a good silver plating film can be formed with excellent liquid stability. I understood.
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