JP5701944B2 - 周波数可変信号発生装置 - Google Patents
周波数可変信号発生装置 Download PDFInfo
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- JP5701944B2 JP5701944B2 JP2013145682A JP2013145682A JP5701944B2 JP 5701944 B2 JP5701944 B2 JP 5701944B2 JP 2013145682 A JP2013145682 A JP 2013145682A JP 2013145682 A JP2013145682 A JP 2013145682A JP 5701944 B2 JP5701944 B2 JP 5701944B2
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- 230000003287 optical effect Effects 0.000 claims description 121
- 239000013307 optical fiber Substances 0.000 claims description 93
- 230000010287 polarization Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 13
- 238000010009 beating Methods 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/083—Ring lasers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
- H04B10/2575—Radio-over-fibre, e.g. radio frequency signal modulated onto an optical carrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1053—Control by pressure or deformation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1092—Multi-wavelength lasing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/146—External cavity lasers using a fiber as external cavity
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Plasma & Fusion (AREA)
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Description
しかしながら、前述した従来技術による方法は、マイクロ波の周波数変換が容易ではないという不具合がある。
一方、光電変換器190に入力される2つの光信号の重複信号は、下記の式2によって表すことができる。
即ち、2つの光信号のビーティングにより生じる電気信号RFの周波数は、2つの光信号の周波数差と同一になる。
前記目的を達成するために本発明の第1の態様による周波数可変信号発生装置は、光信号を生成する光源と、前記光源の光信号が入力され、互いに光学的に連結され、互いに異なる共振条件を有する第1及び第2共振器と、前記第1共振器に光学的に連結され、ひずみによって変形可能な構造物と、前記構造物上に設けられ、それぞれ第1波長及び第2波長の光信号をフィルタリングする第1光ファイバ格子及び第2光ファイバ格子と、前記第1共振器に光学的に連結され、前記第1波長及び第2波長間の間隔に対応する周波数の信号を生成する光電変換器とを含む。
本発明の第3の態様による周波数可変信号発生方法は、光信号を生成する段階と、第1光ファイバ格子及び第2光ファイバ格子を用いて、光信号のうち第1波長及び第2波長の光信号をそれぞれフィルタリングする段階と、前記第1光ファイバ格子及び前記第2光ファイバ格子に生じさせたひずみによって前記第1波長及び前記第2波長間の間隔を調節する段階と、前記第1波長及び前記第2波長間の間隔に対応する周波数の信号を生成する段階とを含む。
Claims (7)
- 周波数可変信号発生装置において、
光信号を生成する光源と、
前記光源の光信号が入力される共振器と、
ひずみによって変形可能な構造物と、
前記構造物上に位置し、第1波長及び第2波長を含む波長帯域の光信号を透過し、前記共振器に光学的に連結された第1光ファイバ格子と、
前記共振器に光学的に連結され、前記第1光ファイバ格子で透過された光信号のうち前記第1波長及び前記第2波長の光信号をフィルタリングする第2光ファイバ格子と、
前記共振器に光学的に連結され、前記第1波長及び前記第2波長間の間隔に対応する周波数の信号を生成する光電変換器と
を含み、
前記第1波長及び前記第2波長間の間隔は前記構造物が変形された程度に対応し、
前記構造物は、第1方向に変形される第1領域及び第2方向に変形される第2領域を含み、
前記第1光ファイバ格子は前記第1領域又は前記第2領域に位置し、
前記構造物は、
中に穴の空いた第1円板、前記第1円板内の第2円板、及び前記第1円板及び前記第2円板と連結され、前記第1円板が回転することによって変形される平板を含み、
前記第1領域及び前記第2領域は前記平板上に位置することを特徴とする周波数可変信号発生装置。 - 前記第1光ファイバ格子は位相遷移光ファイバ格子であり、
前記第2光ファイバ格子は反射型光ファイバ格子であり、
前記第1光ファイバ格子及び前記第2光ファイバ格子は同じ中心波長を有することを特徴とする請求項1に記載の周波数可変信号発生装置。 - 前記共振器及び前記第2光ファイバ格子の間に光学的に連結された光循環器を更に含み、
前記光循環器は、前記共振器に光学的に連結された第1ポート、前記第2光ファイバ格子に光学的に連結された第2ポート、及び前記共振器に光学的に連結された第3ポートを備えることを特徴とする請求項1に記載の周波数可変信号発生装置。 - 前記共振器に光学的に連結された偏光調節器を更に含むことを特徴とする請求項1に記載の周波数可変信号発生装置。
- 前記光源は、半導体光増幅器を含むことを特徴とする請求項1に記載の周波数可変信号発生装置。
- 前記共振器は、リング共振器であることを特徴とする請求項1に記載の周波数可変信号発生装置。
- 前記共振器に光学的に連結された光アイソレータを更に含むことを特徴とする請求項1に記載の周波数可変信号発生装置。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090000295A KR100973981B1 (ko) | 2009-01-05 | 2009-01-05 | 주파수 가변 신호 발생 장치 및 방법 |
| KR10-2009-0000295 | 2009-01-05 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2009207064A Division JP5319465B2 (ja) | 2009-01-05 | 2009-09-08 | 周波数可変信号発生装置及び方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013201464A JP2013201464A (ja) | 2013-10-03 |
| JP5701944B2 true JP5701944B2 (ja) | 2015-04-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2009207064A Expired - Fee Related JP5319465B2 (ja) | 2009-01-05 | 2009-09-08 | 周波数可変信号発生装置及び方法 |
| JP2013145682A Expired - Fee Related JP5701944B2 (ja) | 2009-01-05 | 2013-07-11 | 周波数可変信号発生装置 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2009207064A Expired - Fee Related JP5319465B2 (ja) | 2009-01-05 | 2009-09-08 | 周波数可変信号発生装置及び方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20100172382A1 (ja) |
| JP (2) | JP5319465B2 (ja) |
| KR (1) | KR100973981B1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5902267B1 (ja) * | 2014-09-19 | 2016-04-13 | 株式会社東芝 | 半導体発光素子 |
| CN105514773B (zh) * | 2015-12-10 | 2018-12-21 | 华讯方舟科技有限公司 | 一种双波长光纤激光器及其工作方法 |
| KR102179521B1 (ko) * | 2019-10-31 | 2020-11-17 | 부산대학교 산학협력단 | 이중 가변 기반의 발진 광주파수 스캐닝 레이저 광원 및 그를 이용하는 측정 장치 |
| US12609504B2 (en) | 2019-10-31 | 2026-04-21 | Pusan National University Industry-University Cooperation Foundation | Dual spectral variable-based optical frequency scanning laser light source and measurement device using the same and object angle-dependent distance measurement device using propagation angle switching for each optical frequency |
| KR102353365B1 (ko) * | 2020-08-31 | 2022-01-19 | 부산대학교 산학협력단 | 컬러천이 레이저의 중심파장 별 전파 각도 전환을 이용하는 대상물의 각도에 따른 거리 측정 장치 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS55121215U (ja) * | 1979-02-21 | 1980-08-28 | ||
| JP2605023B2 (ja) * | 1986-10-07 | 1997-04-30 | 富士通株式会社 | フアイバリングレーザ |
| US5450427A (en) * | 1994-10-21 | 1995-09-12 | Imra America, Inc. | Technique for the generation of optical pulses in modelocked lasers by dispersive control of the oscillation pulse width |
| KR100329042B1 (ko) * | 1999-08-03 | 2002-03-18 | 윤덕용 | 광섬유 구조물 변형 감지시스템 |
| ES2261598T3 (es) * | 2002-03-06 | 2006-11-16 | Aston University | Generacion de señales portadoras electronicas en el dominio optico. |
| JP2004064031A (ja) * | 2002-06-03 | 2004-02-26 | Mitsubishi Cable Ind Ltd | 光増幅装置および光源装置 |
| KR100488354B1 (ko) * | 2002-10-31 | 2005-05-10 | 한국전자통신연구원 | 광섬유 격자 거울을 이용한 변조 주파수 가변형 광 발진기 |
| KR100786649B1 (ko) * | 2003-09-08 | 2007-12-21 | 한국과학기술연구원 | 광통신 시스템용 가변 분산 보상기 |
| JP4527479B2 (ja) | 2004-09-10 | 2010-08-18 | サンテック株式会社 | 波長走査型ファイバレーザ光源 |
| JP2007115900A (ja) * | 2005-10-20 | 2007-05-10 | Nec Corp | 波長可変光源、波長可変光源モジュール、および波長可変光源の駆動方法 |
| JP2007142091A (ja) * | 2005-11-17 | 2007-06-07 | Noritsu Koki Co Ltd | レーザ装置、レーザ露光装置及び写真処理装置 |
| KR100767722B1 (ko) * | 2006-03-28 | 2007-10-17 | 한국과학기술연구원 | 초협대역 대역투과 필터 기반 광섬유 레이저 광원을 이용한마이크로파 신호 발생기 |
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2009
- 2009-01-05 KR KR1020090000295A patent/KR100973981B1/ko not_active Expired - Fee Related
- 2009-08-26 US US12/547,712 patent/US20100172382A1/en not_active Abandoned
- 2009-09-08 JP JP2009207064A patent/JP5319465B2/ja not_active Expired - Fee Related
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2013
- 2013-07-11 JP JP2013145682A patent/JP5701944B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013201464A (ja) | 2013-10-03 |
| US20100172382A1 (en) | 2010-07-08 |
| JP5319465B2 (ja) | 2013-10-16 |
| KR100973981B1 (ko) | 2010-08-05 |
| JP2010157685A (ja) | 2010-07-15 |
| KR20100081036A (ko) | 2010-07-14 |
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