JP5635788B2 - Deposition equipment - Google Patents

Description

  The present invention relates to a film forming apparatus used when manufacturing a semiconductor element or a high-performance film (for example, an antireflection film or a gas barrier film).

  Conventionally, a thin film is formed by plasma enhanced chemical vapor deposition (plasma CVD). For example, in the plasma film forming apparatuses described in Patent Documents 1 and 2, a first flow path for flowing a first gas containing a film material and a second flow path for flowing a second gas not containing a film material And an electrode. The active gas is generated in the second gas by applying a voltage to the second gas flowing through the second flow path with an electrode to generate a discharge, and the first gas and the active seed flowing through the first flow path. And the second gas containing. As a result, the raw material of the first gas film is decomposed and reacted with the active species of the second gas. Thereafter, the raw material of the film is deposited on the object to be processed by spraying the first gas and the second gas mixed and mixed on the object to be processed. In this way, a thin film can be formed on the surface of the object to be processed.

JP 2004-149919 A JP-A-2005-116901

  However, in the above-described plasma film forming apparatus, the first gas and the second gas are merged by flowing the second gas from a direction substantially perpendicular to the flow direction of the first gas or an oblique direction of about 45 °. ing. Therefore, the flow direction of the first gas is disturbed by the merge with the second gas, and the raw material of the film that reaches the object to be processed is likely to be non-uniform, and as a result, the film thickness on the object to be processed is non-uniform. Therefore, there is a problem that it is difficult to form a uniform thin film. Furthermore, since the first gas is supplied from the periphery of the second gas flow, the reaction between the active species in the first gas and the second gas tends to be non-uniform, and as a result, a thin film having a uniform composition is formed. There was a problem that it was difficult.

  The present invention has been made in view of the above points, and an object thereof is to provide a film forming apparatus that can easily form a film having a uniform thickness and composition.

A film forming apparatus according to the present invention is a film forming apparatus for generating a plasma under atmospheric pressure and depositing a film raw material on the surface of an object to be processed by using the plasma. A first flow path for flowing a film-forming gas contained therein, a second flow path for flowing a plasma-generating gas, an electrode for applying an electric field to the plasma-generating gas and generating plasma, The film forming gas from the first flow path to the merge section is provided with a merge section that merges the first flow path and the second flow path, and a discharge port through which the film material is discharged from the merge section. The first flow path is formed in the second flow path so that the inflow direction of the gas and the flow direction of the plasma at the confluence portion are substantially parallel, and the first nozzle having the first flow path, A second nozzle having the second flow path, the first nozzle being the second flow The first nozzle and the second nozzle are formed so as to be relatively movable in a direction substantially parallel to a flow direction of the plasma generation gas in the second flow path, and the first nozzle and the second nozzle A nozzle moving unit for moving at least one of the nozzles relative to the other has a plasma detecting unit that detects the state of the plasma, and the first by the nozzle moving unit based on the detection result of the plasma detecting unit A movement control unit that controls a movement amount of at least one of the nozzle and the second nozzle is provided .
A film forming apparatus according to the present invention is a film forming apparatus for generating a plasma under atmospheric pressure and depositing a film raw material on the surface of an object to be processed by using the plasma. A first flow path for flowing a film-forming gas contained therein, a second flow path for flowing a plasma-generating gas, an electrode for applying an electric field to the plasma-generating gas and generating plasma, The film forming gas from the first flow path to the merge section is provided with a merge section that merges the first flow path and the second flow path, and a discharge port through which the film material is discharged from the merge section. The first flow path is formed in the second flow path so that the inflow direction of the plasma and the flow direction of the plasma at the merging portion are substantially parallel, and the opening area of the discharge port is variable. It is characterized by being made.
A film forming apparatus according to the present invention is a film forming apparatus for generating a plasma under atmospheric pressure and depositing a film raw material on the surface of an object to be processed by using the plasma. A first flow path for flowing a film-forming gas contained therein, a second flow path for flowing a plasma-generating gas, an electrode for applying an electric field to the plasma-generating gas and generating plasma, A merging portion for merging the first flow path and the second flow path; an outlet for discharging the membrane material from the merging section; a first nozzle having the first flow path; and the second flow path. The first nozzle and the second nozzle are formed of an insulating material, the first nozzle is provided in the second flow path, and the outer side of the first nozzle and the second nozzle The space formed between the inside and the inside of the The electrode is provided so that is substantially parallel to the flow direction of the plasma generation gas, the flow direction of the film forming gas from the first flow path to the merge portion, and the flow direction of the plasma at the merge portion The first flow path is formed in the second flow path so as to be substantially parallel to each other.

  In the present invention, it is preferable that a plurality of the electrodes are provided, and these electrodes are juxtaposed in a direction substantially parallel to the flow direction of the plasma generating gas flowing through the second flow path.

In this invention, it is preferable to provide the 1st nozzle which has the said 1st flow path, and the 2nd nozzle which has the said 2nd flow path .
In the present invention, it is preferable that the first nozzle and the second nozzle are formed so as to be relatively movable in a direction substantially parallel to a flow direction of the plasma generation gas in the second flow path.

  In the present invention, it is preferable that a nozzle moving unit for moving at least one of the first nozzle and the second nozzle with respect to the other is provided.

  In this invention, it has a plasma detection part which detects the state of the said plasma, Based on the detection result of this plasma detection part, the movement amount of at least one of the said 1st nozzle and the said 2nd nozzle by a nozzle moving part It is preferable that a movement control unit for controlling the movement is provided.

In the present invention, the discharge port which the membrane material to the merging portion is released is formed, the merging portion and the opening area of the discharge port is smaller than the cross-sectional area of in the combined position of the first flow path It is preferable.

  In the present invention, it is preferable that the opening area of the discharge port is formed to be variable.

  In the present invention, it has an opening variable part for making the opening area of the discharge port variable, and has a plasma detection part for detecting the state of the plasma, and based on the detection result of the plasma detection part, It is preferable to provide an opening control unit that controls a variable amount of the opening area by the opening variable unit.

  In this invention, it is preferable that the said plasma detection part is an optical sensor which detects the emitted light of the plasma produced | generated in the said 2nd flow path, or the plasma discharge | released from the said discharge port.

  In the present invention, it has an opening variable part for making the opening area of the discharge port variable, and has a film detection part for detecting the state of the film formed on the object to be processed, and this film detection part It is preferable that an opening control unit that controls a variable amount of the opening area by the opening variable unit based on the detection result is provided.

  In this invention, it is preferable that the said film | membrane detection part is an optical sensor which detects the reflected light or the transmitted light of the film | membrane formed in the said to-be-processed object.

  In the present invention, it is preferable to include a film forming gas control unit that controls a supply amount of the film forming gas based on a detection result of the plasma detection unit or the film detection unit.

  In the present invention, the second nozzle is preferably formed using a circular tube.

  In the present invention, the second nozzle is preferably formed using a square tube.

  The present invention is easy to form a film having a uniform thickness and composition.

It is a schematic sectional drawing which shows an example of embodiment of this invention. An example of the 1st nozzle same as the above is shown, and (a) and (b) are perspective views. It is a schematic sectional drawing which shows an example of other embodiment same as the above. It is a schematic sectional drawing which shows an example of other embodiment same as the above. It is a schematic sectional drawing which shows an example of other embodiment same as the above. It is a schematic sectional drawing which shows an example of other embodiment same as the above. An example of a 2nd nozzle same as the above is shown, (a) (b) is a perspective view. It is a schematic sectional drawing which shows an example of other embodiment same as the above. An example of a 2nd nozzle same as the above is shown, (a) (b) is a perspective view. It is a schematic sectional drawing which shows an example of other embodiment same as the above. It is a schematic sectional drawing which shows an example of other embodiment same as the above. It is a schematic sectional drawing which shows an example of other embodiment same as the above. It is a schematic sectional drawing which shows an example of other embodiment same as the above.

  Hereinafter, modes for carrying out the present invention will be described.

  FIG. 1 shows an example of a film forming apparatus A. The film forming apparatus A includes a first nozzle 1, a second nozzle 2, an electrode 3, and the like.

  The first nozzle 1 is formed by a tube member 4 such as a circular tube as shown in FIG. 2A or a square tube as shown in FIG. The tube member 4 is formed of an insulating material (dielectric material) having a high melting point, and a glassy material such as quartz, alumina, yttria partially stabilized zirconium, or a ceramic material is used as the insulating material. The pipe member 4 is formed straight, and the space inside thereof is formed as a straight first flow path 5. One end (upper end) of the first flow path 5 is opened as an inlet 6 at one end (upper end) of the pipe member 4 and the other end (lower end) of the first flow path 5 is the other end (lower end) of the pipe member 4. ) Is opened as the outlet 7.

  Similar to the first nozzle 1, the second nozzle 2 is formed by a tube member 8 such as a circular tube or a square tube, and the material of the second nozzle 2 is the same as that described above. The pipe member 8 is formed straight, and the internal space is formed as a straight second flow path 9. One end of the second channel 9 is opened as an inlet 10 at one end (upper end) of the tube member 8, and the other end of the second channel 9 is opened as an outlet 11 at the other end (lower end) of the tube member 8. It is open. The inner diameter of the tube member 8 of the second nozzle is formed larger than the outer diameter of the tube member 4 of the first nozzle 1.

  The electrode 3 is made of a conductive metal material such as copper, aluminum, brass, or stainless steel having high corrosion resistance (such as SUS304). Further, although the electrode 3 is formed in an annular shape, the inner peripheral shape thereof is preferably formed to match the outer peripheral shape of the second nozzle 2.

  The first nozzle 1 is provided by being inserted into the second flow path 9 of the second nozzle 2. In this case, it is preferable that the first nozzle 1 and the second nozzle 2 are arranged so that the axial direction (longitudinal direction) thereof is the vertical direction. Further, the axial direction of the first nozzle 1 and the axial direction of the second nozzle 2 are the same direction, but the second flow path is such that the central axis of the first nozzle 1 and the central axis of the second nozzle 2 coincide. 9 is preferably provided with the first nozzle 1. The electrode 3 is provided on the outer periphery of the second nozzle 2. A plurality of electrodes 3 can be provided. For example, a pair of electrodes 3 can be used. The pair of electrodes 3 can be juxtaposed in the axial direction of the second nozzle 2 via a predetermined interval. A power source 12 is connected to the electrode 3. Of the pair of electrodes 3, the power source 12 is connected to an electrode (upstream electrode) 3 farther than the discharge port 11 of the second nozzle 2, and an electrode (downstream electrode) 3 closer to the discharge port 11. Is preferably grounded.

  In the second flow path 9, a discharge is generated by applying a voltage from the power supply 12 to the electrode 3, and a portion where plasma is generated is formed as a plasma generation unit 13. That is, the plasma generation unit 13 can be formed between the upstream end 3 a of the upstream electrode 3 and the downstream end 3 b of the downstream electrode 3. In the second flow path 9, the outlet 7 of the first nozzle 1 is positioned between the upstream end of the plasma generator 13 and the outlet 11 so as to face the outlet 11. A part of the second flow path 9 between the discharge port 11 and the discharge port 11 is formed as a merge portion 14. In FIG. 1, the outlet 7 is located downstream of the downstream end of the plasma generator 13.

  A nozzle holding portion 15 is provided at the upstream end of the second nozzle 2. The nozzle holding part 15 positions the first nozzle 1 and the second nozzle 2, and the upstream end of the first nozzle 1 protruding from the inlet 10 of the second nozzle 2 is inserted therein. In addition, a supply path 16 that communicates with the second flow path 9 through the inlet 10 is formed in the nozzle holding portion 15.

  Formation of the film C on the surface of the workpiece W under atmospheric pressure using the film forming apparatus A formed as described above is performed as follows. In this specification, “under atmospheric pressure” refers to a range of atmospheric pressure of 90 to 107 kPa.

  First, the plasma generation gas PG is supplied from the inlet 10 to the second flow path 9 through the supply path 16 under atmospheric pressure. As the plasma generation gas PG, nitrogen, helium, argon, neon, hydrogen, or the like can be used alone or in combination. The supply amount (flow rate) of the plasma generation gas PG is not particularly limited, but can be 0.1 to 300 liters / minute. The plasma generation gas PG supplied to the second flow path 9 flows downward through the second flow path 9 (the space between the outer surface of the first nozzle 1 and the inner surface of the second nozzle 2) to generate plasma. It reaches the part 13 and then reaches the junction part 14. The flow direction of the plasma generation gas PG is substantially parallel to the axial direction of the first nozzle 1 and the second nozzle 2 (substantially vertically downward).

  On the other hand, a voltage is applied between the pair of electrodes 3 by the power supply 12, and an electric field E is applied to the plasma generation unit 13. The waveform of the voltage applied to the electrode 3 can be a continuous waveform such as a sine wave, and the frequency is preferably set to 1 kHz to 200 MHz. The waveform of the voltage applied to the electrode 3 can be a pulse waveform. In this case, the frequency is preferably set to 0.5 kHz to 200 MHz. The voltage applied to the electrodes 3 varies depending on the distance between the electrodes 3 and the composition of the plasma generating gas PG, but is preferably set so that the electric field strength is in the range of 0.1 kV to 30 kV / mm. When an electric field is applied to the plasma generation unit 13 in this way, a discharge such as a streamer discharge is generated in the plasma generation unit 13 under atmospheric pressure, and the plasma generation gas PG flowing through the plasma generation unit 13 becomes plasma P due to this discharge. Here, the plasma P is a gas containing active species such as ions, radicals, and charged particles. Therefore, a gas containing active species, that is, plasma P flows into the junction 14 downstream of the plasma generator 13.

Next, a film forming gas CG containing a film material is supplied from the inlet 6 of the first nozzle 1 to the first flow path 5 under atmospheric pressure. Here, silane, organosilane, metal element-containing gas (for example, gas containing a metal element such as silicon, indium, aluminum, zinc) or the like may be used alone or in combination as a film material. Can do. The film forming gas CG may be composed of only a film raw material gas or a mixed gas of a film raw material (whether or not it is a gas) and other gases. In this case, as other gases mixed with the film material, oxygen, hydrogen, nitrogen, air, ammonia, nitrogen oxide gas, hydrocarbon gas, or the like can be used alone or in combination. The supply amount (flow rate) of the film forming gas CG can be appropriately set depending on the thickness of the film forming, the type and concentration of the film raw material, and is not particularly limited. For example, it may be 0.01 to 30 liters / minute. Can do. The film forming gas CG supplied to the first flow path 5 flows downward through the first flow path 5 and flows into the junction 14 through the outlet 7, and the flow direction of the film forming gas CG is the first direction. It is substantially parallel to the axial direction of the first nozzle 1 and the second nozzle 2 (substantially vertically downward). Therefore, the flow direction at the joining portion 14 of the plasma P, a flowing direction of film forming gas CG into the confluent part 14 from the outlet port 7 of the first flow path 5 is made of a substantially flat row. Here, “substantially parallel” means that the angle formed between the flow direction of the plasma P at the merge portion 14 and the inflow direction of the film forming gas CG from the outlet 7 of the first flow path 5 to the merge portion 14. A range of 0 ° to 10 °.

  In this way, the film forming gas CG and the plasma P that have flowed into the joining portion 14 flow downward through the joining portion 14 while being mixed. As a result of this mixing, the active species contained in the plasma P act on the film raw material in the film forming gas CG to cause dissociation and bonding reaction of the film raw material. For example, when hexamethyldisiloxane is used as the film material and argon and oxygen mixed gas are used as the plasma generation gas PG, active species of oxygen radicals are generated by discharge, and the film material becomes silicon oxide by the active species.

  Thereafter, the mixed gas of the film forming gas CG and the plasma P containing the film raw material flows downward through the junction 14 and is discharged from the discharge port 11. At this time, the mixed gas can be jetted out by the pressure of the film forming gas CG and the plasma P or the like. Then, when the mixed gas is supplied to the workpiece W located downstream of the discharge port 11 under atmospheric pressure, the film material in the mixed gas adheres to the surface of the workpiece W and accumulates. Thus, the film C is formed. The film C can be formed to a thickness of 10 nm to 100 μm, for example. Here, film formation can be performed while the workpiece W is conveyed in a direction orthogonal to the blowing direction of the mixed gas on the downstream side of the discharge port 11, and the film forming apparatus A is orthogonal to the blowing direction of the mixed gas. The film may be formed while moving in the direction. Further, the film may be formed without relatively moving the workpiece W and the film forming apparatus A. When the workpiece W is conveyed, the speed can be appropriately set depending on the thickness of the film C, the composition of the film raw material, and the like. In addition, as the to-be-processed object W, a glass plate, a glass molded product, a resin film, a molded product, etc. can be illustrated. In this case, the resin workpiece W can be formed of, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate, acrylic resin, epoxy resin, or the like.

Then, in the film deposition apparatus A, the inflow direction into the confluent part 14 of the film forming gas CG, since it Ryakutaira line and flow direction of the plasma P in the combined unit 14, the flow of the deposition gas CG plasma It becomes difficult to be disturbed by merging with P. Furthermore, since the film forming gas CG is reliably introduced into the plasma P, the reaction between the film forming gas CG and the active species in the plasma P is promoted. Therefore, since the film forming gas CG travels substantially straight from the outlet 7 to the workpiece W through the junction 14 and the discharge port 11, the film raw material easily reaches the workpiece W uniformly and has a uniform thickness. Thus, a homogeneous film can be easily formed, and the film material can be easily reacted with the plasma P efficiently, so that the homogenization of the film composition can be improved. In addition, the film forming gas CG is heated by conduction of heat of the plasma P through the first nozzle 1 when passing through the location of the plasma generation unit 13 while flowing through the first flow path 5. Become. Therefore, even if the film forming gas CG and the plasma P merge, it is possible to prevent a rapid temperature change, and uniform dissociation and reaction of the film raw material are likely to occur. At this time, since the film forming gas CG can be heated without being directly exposed to the plasma P, the plasma generating unit 13 is not contaminated by the film raw material. Further, in the film forming apparatus A, since the pair of electrodes 3 are arranged in parallel with the flow direction of the plasma generation gas PG, the direction of the electric field E applied to the plasma generation unit 13 is also the plasma generation gas PG. Is substantially parallel to the distribution direction. Therefore, streamer discharge is likely to occur in the plasma generation unit 13, and active species are efficiently generated in the plasma generation gas PG. Therefore, the reactivity of the film material is improved, and it is difficult for the film quality to be deteriorated such that an unreacted film material is mixed. Here, “substantially parallel” refers to a range in which the angle formed between the flow direction of the plasma generation gas PG and the direction of the electric field E applied to the plasma generation unit 13 is 0 ° or more and 30 ° or less.

FIG. 3 shows another example of the film forming apparatus A. In the film forming apparatus A, the first nozzle 1 and the second nozzle 2 are formed to be relatively movable in a direction parallel to the axial direction. In this case, the first nozzle 1 and the nozzle holder 15 are not completely fixed. Further, the nozzle holding portion 15 is provided with a packing 17, and the first nozzle 1 and the packing 17 are brought into close contact with each other so that the plasma generation gas PG is hardly leaked from the supply path 16. Other configurations and film forming operations are the same as those in FIG.

  In the film forming apparatus A, the first nozzle 1 and the second nozzle 2 are moved relative to each other in a direction parallel to the axial direction (the flow direction of the film forming gas CG and the plasma generation gas PG), thereby the first nozzle 1. The position of the outlet 7 in one axial direction (longitudinal direction) can be changed. That is, it is possible to change the length of the merging portion 14 by changing the distance between the outlet 7 and the outlet 11, and until the film formation gas CG and the plasma P merge and reach the object W to be processed. You can change the time and distance. Therefore, it is easy to set optimum film forming conditions according to the composition of the film forming gas CG and the plasma generating gas PG and the state of the plasma P. For example, when the dissociation or reaction of the film material is difficult to occur, the joining portion 14 is lengthened, and the time until the film material reaches the workpiece W from the mixing of the film formation gas CG and the plasma generation gas PG is increased. The membrane material can be sufficiently dissociated and reacted.

  FIG. 4 shows another example of the film forming apparatus A. This film forming apparatus A is formed with the nozzle moving part 18 in FIG. 3, and other configurations are the same as those in FIG. The nozzle moving unit 18 moves the first nozzle 1 with respect to the second nozzle 2, and includes a driving source 19 that generates driving such as a motor, and an attachment unit 20 that moves by driving generated by the driving source 19. And is formed. The mounting portion 20 is driven in a direction substantially parallel to the axial direction of the first nozzle 1. The attachment portion 20 is attached to the upstream end portion of the first nozzle 1 that protrudes upstream of the nozzle holding portion 15.

  In the film forming apparatus A, the first nozzle 1 can be moved with respect to the second nozzle 2 by mechanical driving as compared with that in FIG. Therefore, for example, operations that are difficult to perform manually, such as vibrating the first nozzle 1 in the axial direction by the nozzle moving unit 18, can be easily performed.

  FIG. 5 shows another example of the film forming apparatus A. In this film forming apparatus A, the plasma detection unit 21 and the movement control unit 22 are provided in FIG. 4, and other configurations are the same as those in FIG. 4. The plasma detector 21 detects the state of the plasma P in the plasma generator 13. For example, the plasma detector 21 can be provided in contact with the outer surface of the first nozzle 1 between the pair of electrodes 3. The plasma detector 21 can use, for example, an optical sensor that captures radiated light from the plasma, and detects the state of the plasma P, such as the amount of light emitted from the plasma P and the emission color. The movement control unit 22 receives the state of the plasma P detected by the plasma detection unit 21 and controls the movement amount and movement direction of the first nozzle 1 by the nozzle movement unit 18 based on the input. The movement control unit 22 can be formed by a microcomputer or the like, and can be provided in the drive source 19 of the nozzle moving unit 18.

  In this film forming apparatus A, the plasma detection unit 21 detects the state of the plasma P in the plasma generation unit 13, and based on the detection result, the amount of movement of the first nozzle 1 is detected for feedback control. Depending on the state of the plasma P, the first nozzle 1 can be moved so as to achieve a more optimal film forming condition. For example, when the emission amount of the plasma P is small, it is determined that the generation amount of the plasma P is small, the first nozzle 1 is moved to the upstream side, and the joining portion 14 is lengthened to mix the plasma P and the film forming gas CG. It is possible to lengthen the time until the workpiece W is reached.

  FIG. 6 shows another example of the film forming apparatus A. In this film forming apparatus A, in FIG. 4, the second nozzle 2 is formed by providing a throttle 23 at the downstream end of the tube member 8, and the other configurations are the same as those in FIG. . The throttle portion 23 protrudes from the downstream end of the tube member 8 and is formed integrally with the tube member 8. As shown in FIG. 7A, when the tube member 8 is a circular tube, it is downstream from the upstream side. It is formed of a substantially truncated cone-shaped tubular body whose inner diameter gradually decreases toward the side. Further, as shown in FIG. 7B, when the tube member 8 of the second nozzle 2 is a rectangular tube that is long in the width direction, the throttle portion 23 has a short-side dimension from the upstream side toward the downstream side. It is formed to become gradually smaller. The downstream end surface of the throttle portion 23 of the tubular body is opened as the discharge port 11, and the upstream end portion of the throttle portion 23 communicates with the first flow path 5 and the second flow path 9. The first nozzle 1 is positioned at substantially the same height as the downstream end portion of the pipe member 8, and the inner space of the throttle portion 23 is formed as a merge portion 14.

  In this film forming apparatus A, as shown in FIG. 1, compared with the case where the cross-sectional area of the plasma generation unit 13 and the merging unit 14 (cross-sectional area in the direction orthogonal to the axial direction) and the opening area of the discharge port 11 are the same The flow of the film forming gas CG and the plasma P can be reduced by the restricting portion 23 to increase the flow velocity from the discharge port 11 and the pressure of the film forming gas CG and the plasma P supplied to the workpiece W can be increased. The film C can be efficiently formed. Even in the case where the throttle part 23 is provided, the inflow direction of the film forming gas CG to the joining part 14 and the flow direction of the plasma P in the joining part 14 are substantially parallel.

  FIG. 8 shows another example of the film forming apparatus A. This film forming apparatus A is the same as that in FIG. 5 except that the second nozzle 2 is formed by providing the variable opening 24 at the downstream end of the tube member 8 in FIG. is there. The opening variable section 24 includes a base 25, a movable plate 26 and a movable plate driving section 27.

  The base 25 is formed in a square shape in plan view. The downstream end of the tube member 8 is inserted into the base 25, and the downstream opening of the tube member 8 is exposed at the downstream side surface (lower surface) of the base 25. The movable plate 26 is formed in a square shape when viewed from the front, and a plurality of movable plates 26 are provided on the base 25.

  The upstream end (upper end) of the movable plate 26 is pivotally attached to the downstream side surface of the base 25 around the downstream opening of the tube member 8 by a rotating shaft 28. Accordingly, the movable plate 26 is formed so as to be rotatable in a direction in which the movable plate 26 approaches and separates from the downstream opening of the tube member 8. As shown in FIG. 9 (a), in the case of a circular tube member 8, a base 25 having a substantially square shape in plan view can be used, and the movable plate 26 has a substantially square shape in front view. Can be used. In addition, the four movable plates 26 can be provided by arranging the rotation shaft 28 in parallel with the four sides of the base 25. On the other hand, in the case of a rectangular tube member 8 that is long in the width direction, as shown in FIG. 9B, the base 25 has a substantially rectangular shape in plan view having a length equivalent to the width direction of the tube member 8. Can be used. Also, in the case of the tube member 8 having a rectangular tube that is long in the width direction, the four movable plates 26 can be provided by arranging the rotation shafts 28 in parallel with the four sides. In this case, one opposing movable plate 26a, 26a is substantially rectangular in front view having a length equivalent to the width direction of the tube member 8, and the other opposing movable plate 26b, 26b is substantially in front view. A square thing can be used.

  In the second nozzle 2 in FIGS. 9A and 9B, it is not necessary to form all the four movable plates 26 so as to be rotatable. The movable plate 26 can be formed as a fixed plate 26c so as not to rotate. In this case, the fixed plate 26 c can be provided to protrude from the downstream side surface of the base 25 without using the rotating shaft 28. Moreover, in the thing of FIG.9 (b), the movable plate 26b arrange | positioned substantially parallel to the transversal direction of the pipe member 8 can be formed as a fixed plate 26c.

  The movable plate drive unit 27 drives the movable plate 26 to rotate, and is formed by a drive source 29 that generates a drive such as a motor, and a rod-shaped pressing unit 30 that moves by the drive generated by the drive source 29. ing. One movable plate drive unit 27 is provided for each movable plate 26, and is arranged on the outer side (opposite side to the tube member 8) of each movable plate 26 and attached to the base 25. The tip of the pressing portion 30 is pivotally connected to the surface of the movable plate 26 (the surface opposite to the surface on the tube member 8 side). The pressing portion 30 is driven in a direction substantially orthogonal to the axial direction of the second nozzle 2, and thereby the movable plate 26 is rotated by the pressing portion 30.

In this film forming apparatus A, a space surrounded by the movable plate 26 on the downstream side of the tube member 8 is formed as the joining portion 14, and the discharge port 11 is formed in a portion surrounded by the downstream end portion of the movable plate 26. ing. Then, when the movable plate 26 is rotated by the movable plate driving unit 27, the opposed movable plates 26 are brought close to and away from each other, and the volume of the junction 14 and the opening area of the discharge port 11 can be changed. Accordingly, the flow rate of the film forming gas CG and the plasma P is reduced to increase the flow velocity from the discharge port 11, or conversely, the flow rate of the film formation gas CG and the plasma P is widened to reduce the flow rate from the discharge port 11. Thus, it becomes easy to set the optimum film forming conditions for forming the film C. Even when the opening variable part 24 is provided, the inflow direction of the film forming gas CG to the joining part 14 and the flow direction of the plasma P in the joining part 14 are substantially parallel.

  FIG. 10 shows another example of the film forming apparatus A. In this film forming apparatus A, in FIG. 8, the movable plate driving section 27 is provided with the opening control section 31 to form the opening variable section 24, and other configurations are the same as those in FIG. The opening control unit 31 is formed so that the detection result of the state of the plasma P by the plasma detection unit 21 is input.

  In this film forming apparatus A, the state of the plasma P detected by the plasma detection unit 21 is input to the opening control unit 31, and based on this, the movement amount and movement direction of the movable plate 26 by the movable plate driving unit 27 are controlled. be able to. In this way, the state of the plasma P in the plasma generation unit 13 is detected by the plasma detection unit 21, and the detection is performed to feedback control the opening area of the discharge port 11 of the second nozzle 2 based on the detection result. In accordance with the state of the plasma P, it becomes easier to set more optimal film forming conditions.

  FIG. 11 shows another example of the film forming apparatus A. In this film forming apparatus A, the film forming gas control unit 32 is provided in FIG. 10, and the other configurations are the same as those in FIG. 10. The film forming gas control unit 32 controls the supply amount (flow rate) of the film forming gas CG to the first nozzle 1 based on the detection result of the plasma detection unit 21. As such a film forming gas control unit 32, for example, an electromagnetic valve or the like provided in the middle of a pipe 33 for supplying the film forming gas CG to the first nozzle 1, and a microcomputer for controlling opening and closing of the electromagnetic valve and the like. Etc. and can be formed.

  In the film forming apparatus A, the state of the plasma P detected by the plasma detecting unit 21 is input to the film forming gas control unit 32, and based on this, the supply amount (flow rate) of the film forming gas CG to the first nozzle 1 is determined. Can be controlled. As described above, the plasma detection unit 21 detects the state of the plasma P in the plasma generation unit 13, and based on the detection result, it is detected to feedback control the supply amount of the film forming gas CG to the first nozzle 1. In accordance with the state of the plasma P, it is easy to set more optimal film forming conditions. For example, when the emission amount of plasma P is large, it can be determined that the generation amount of plasma P is large, and the supply amount of the film forming gas CG supplied to the first nozzle 1 can be increased.

  FIG. 12 shows another example of the film forming apparatus A. In this film forming apparatus A, instead of the plasma detection unit 21 that detects the state of the plasma P in the plasma generation unit 13 as shown in FIG. 11, the plasma that detects the state of the plasma P emitted downstream of the emission port 11. A detection unit 21 is provided, and other configurations are the same as those in FIG.

In the film forming apparatus A, the state of the plasma P detected by the plasma detecting unit 21 is input to the movement control unit 22 of the nozzle moving unit 18, the opening control unit 31 of the variable opening unit 24, and the film forming gas control unit 32. Based on this, the movement amount of the first nozzle 1, the opening area of the discharge port 11, and the supply amount of the film forming gas CG to the first nozzle 1 can be controlled. As described above, the plasma detection unit 21 detects the state of the plasma P on the downstream side of the discharge port 11, and based on the detection result, the movement amount of the first nozzle 1, the opening area of the discharge port 11, and the first nozzle 1. In order to feedback-control the supply amount of the film forming gas CG, it is easy to set a more optimal film forming condition according to the detected state of the plasma P. In particular, in this film forming apparatus A, the state after the film forming gas CG and the plasma P are mixed is detected by the plasma detection unit 21, so that compared with the case where the state of the plasma P in the plasma generation unit 13 is detected, The reaction process between the film forming gas CG and the plasma P can be directly detected, and it becomes easier to set more optimal film forming conditions.

  FIG. 13 shows another example of the film forming apparatus A. In this film forming apparatus A, a film for detecting the state of the film C formed on the surface of the workpiece W instead of the plasma detecting unit 21 for detecting the state of the plasma P in the plasma generating unit 13 as shown in FIG. A detection unit 34 is provided, and other configurations are the same as those in FIG. The film detector 34 may be an optical sensor that captures reflected light or transmitted light from the film C. Therefore, the film detector 34 may be located at a position where reflected light or transmitted light from the film C is input, such as above or below the film-formed workpiece W. The state of the film C is the thickness, composition, etc. of the film C.

  In the film forming apparatus A, the state of the film C detected by the film detecting unit 34 is input to the movement control unit 22 of the nozzle moving unit 18, the opening control unit 31 of the opening variable unit 24, and the film forming gas control unit 32. Based on this, the movement amount of the first nozzle 1, the opening area of the discharge port 11, and the supply amount of the film forming gas CG to the first nozzle 1 can be controlled. In this way, the state of the film C is detected by the film detection unit 34, and based on the detection result, the movement amount of the first nozzle 1, the opening area of the discharge port 11, and the supply of the film forming gas CG to the first nozzle 1. In order to feedback control the amount, it becomes easier to set more optimal film formation conditions according to the detected state of the film C. In particular, in this film forming apparatus A, in order to directly detect the state of the film C, a more optimal film forming condition is set as compared with the case where the state of the plasma P is detected indirectly by detecting the state of the plasma P. It is easy to set.

A film forming apparatus C film E electric field P plasma W object to be processed CG film forming gas PG plasma generating gas 1 first nozzle 2 second nozzle 3 electrode 5 first flow path 9 second flow path 11 discharge port 14 junction 18 nozzle Movement unit 21 Plasma detection unit 22 Movement control unit 24 Aperture variable unit 31 Aperture control unit 32 Deposition gas control unit 34 Film detection unit

Claims (16)

A film forming apparatus for generating a plasma under atmospheric pressure and depositing a film raw material on the surface of an object to be processed by using the plasma, for distributing a film forming gas containing the film raw material A first flow path, a second flow path for circulating the plasma-generating gas, an electrode for applying an electric field to the plasma-generating gas to generate plasma, the first flow path and the second flow A joining portion that joins the passage, and a discharge port through which the film material is discharged from the joining portion, and the inflow direction of the film forming gas from the first flow path to the joining portion, and the joining portion The first flow path is formed in the second flow path so that the plasma flow direction is substantially parallel to the second flow path, and the first nozzle having the first flow path and the second flow path having the second flow path. A nozzle, and the first nozzle is provided in the second flow path. The slip and the second nozzle are formed so as to be relatively movable in a direction substantially parallel to the flow direction of the plasma generation gas in the second flow path, and at least one of the first nozzle and the second nozzle is set to the other. And a plasma detector that detects the state of the plasma, and based on a detection result of the plasma detector, at least one of the first nozzle and the second nozzle by the nozzle moving unit A film forming apparatus comprising a movement control unit for controlling one movement amount . A film forming apparatus for generating a plasma under atmospheric pressure and depositing a film raw material on the surface of an object to be processed by using the plasma, for distributing a film forming gas containing the film raw material A first flow path, a second flow path for circulating the plasma-generating gas, an electrode for applying an electric field to the plasma-generating gas to generate plasma, the first flow path and the second flow A joining portion that joins the passage, and a discharge port through which the film material is discharged from the joining portion, and the inflow direction of the film forming gas from the first flow path to the joining portion, and the joining portion The first flow path is formed in the second flow path so that the flow direction of the plasma is substantially parallel, and the opening area of the discharge port is formed to be variable. Membrane device. A film forming apparatus for generating a plasma under atmospheric pressure and depositing a film raw material on the surface of an object to be processed by using the plasma, for distributing a film forming gas containing the film raw material A first flow path, a second flow path for circulating the plasma-generating gas, an electrode for applying an electric field to the plasma-generating gas to generate plasma, the first flow path and the second flow A merging portion for merging the passage, a discharge port through which the film material is discharged from the merging portion, a first nozzle having the first flow path, and a second nozzle having the second flow path, The first nozzle and the second nozzle are formed of an insulating material, the first nozzle is provided in the second flow path, and is formed between the outside of the first nozzle and the inside of the second nozzle. The space is the plasma generator, and the electric field direction is the flow of the plasma generating gas. The electrode is provided so as to be substantially parallel to the direction, and the inflow direction of the film forming gas from the first flow path to the joining portion is substantially parallel to the plasma flow direction in the joining portion. In this way, the first flow path is formed in the second flow path as described above. Comprising a plurality of said electrodes, any one of claims 1 to 3 these electrodes, characterized in that formed by juxtaposed in the flow direction substantially parallel to the direction of the plasma generation gas flowing through the second flow path The film forming apparatus according to item . And a second nozzle having a second flow path and the first nozzle having a first flow path, the first nozzle to claim 2, characterized in that provided in the second flow path The film-forming apparatus of description. Wherein the front Symbol first nozzle second nozzle to claim 3 or 5, characterized in that formed by relatively movably formed flow direction substantially parallel to the direction of the plasma generation gas in the second flow path The film-forming apparatus of description. The film forming apparatus according to claim 6 , further comprising a nozzle moving unit configured to move at least one of the first nozzle and the second nozzle with respect to the other. A movement control unit for controlling a movement amount of at least one of the first nozzle and the second nozzle by the nozzle moving unit based on a detection result of the plasma detection unit; The film forming apparatus according to claim 7 , wherein the film forming apparatus is provided. Film forming apparatus according to any one of claims 1 to 8, characterized in that formed by the merging portion formed smaller opening area of the discharge port than the cross sectional area of at merging position of the first flow path . Deposition apparatus according to claim 1 or 3, characterized in that the opening area of the discharge port is formed by the variable freely formed. An opening variable part for making the opening area of the discharge port variable, and a plasma detection part for detecting the state of the plasma, and based on the detection result of the plasma detection part, the opening area by the opening variable part The film forming apparatus according to claim 2, further comprising an opening controller that controls a variable amount of the film. The said plasma detection part is an optical sensor which detects the radiation light of the plasma produced | generated in the said 2nd flow path, or the plasma discharge | released from the said discharge port , The any one of Claims 1, 8, 11 characterized by the above-mentioned. The film forming apparatus according to claim 1 . It has an opening variable part for making the opening area of the discharge port variable and has a film detection part for detecting the state of the film formed on the object to be processed, and based on the detection result of the film detection part, The film forming apparatus according to claim 2, further comprising an opening control unit that controls a variable amount of the opening area by the opening variable unit. The film forming apparatus according to claim 13 , wherein the film detecting unit is an optical sensor that detects reflected light or transmitted light of a film formed on the object to be processed. Based on the plasma detection unit or the film detection portion of the detection result of claims 1,8,11 to 14, characterized in that it comprises a deposition gas control unit for controlling the supply amount of the film forming gas The film forming apparatus according to claim 1. The film forming apparatus according to claim 1 , wherein the second nozzle is formed using a circular tube or a square tube .

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