JP5630640B2 - Carbon nanotube manufacturing method and carbon nanotube manufacturing apparatus - Google Patents

Description

  The present invention relates to a carbon nanotube manufacturing method and a carbon nanotube manufacturing apparatus.

  Patent Document 1 discloses a carbon nanotube manufacturing method in which an installation unit for setting a substrate in a reaction chamber and a single pipe-shaped gas supply pipe facing the substrate installed in the installation unit with an interval therebetween are provided. An apparatus is disclosed. According to this, the gas supply pipe is bent. A plurality of air outlets are formed in the peripheral wall of the gas supply pipe. According to this, when the reaction gas is blown out from the plurality of blowout ports of the gas supply pipe toward the substrate, the distance from each blowout port to the carbon nanotube formation surface of the substrate is set to 100 mm or less.

  Patent Document 2 discloses a carbon nanotube production apparatus that supplies a reaction gas along a direction substantially parallel to an upper surface and a lower surface of a flat substrate placed in a reaction chamber and forms carbon nanotubes on the upper surface and the lower surface of the substrate. It is disclosed.

  Patent Document 3 discloses a capacitor having a structure in which carbon nanotubes are respectively formed on an upper surface and a lower surface of a substrate. According to this, the length of the carbon nanotube formed on the upper surface of the substrate is the same as the length of the carbon nanotube formed on the lower surface of the substrate.

JP 2008-137831 A JP 2004-332093 A JP 2007-48907 A

  According to Patent Document 1, since the gas supply pipe for supplying the reaction gas is formed by bending one pipe, the properties (length, etc.) of the carbon nanotube formed on the carbon nanotube formation surface of the substrate are described. ) May cause variations. The reason is that although the outlet formed in the pipe-shaped gas supply pipe is close to the carbon nanotube formation surface of the substrate, the gas supply pipe is a single pipe and is formed in the gas supply pipe. This is because the distance between the air outlet and the carbon nanotube formation surface of the substrate is not uniform. Also in Patent Document 2, there is a possibility that variations may occur in the properties of the carbon nanotubes formed at each part of the carbon nanotube formation surface of the substrate. The reason for this is presumed to be to supply the reaction gas to the substrate along a direction substantially parallel to the upper and lower surfaces of the flat substrate placed in the reaction chamber. In Patent Document 2, in particular, variations in properties tend to occur between the carbon nanotubes formed on the upper surface of the substrate and the carbon nanotubes formed on the lower surface of the substrate. The present applicant has confirmed this phenomenon as Comparative Example 1 of the present application. Also in Patent Document 3, it is speculated that there may be variations in the properties of the carbon nanotubes formed on the carbon nanotube formation surface of the substrate.

  The present invention has been made in view of the above situation, and a novel carbon that can suppress variations in carbon nanotubes formed on the same carbon nanotube formation surface as long as it is the same carbon nanotube formation surface of the object. It is an object to provide a nanotube manufacturing method and a carbon nanotube manufacturing apparatus.

  (1) In the carbon nanotube manufacturing method according to the present invention, (i) an object having a carbon nanotube formation surface for forming carbon nanotubes is prepared, a reaction chamber for accommodating the object, and a reaction chamber The gas supply chamber extended along the surface direction in which the carbon nanotube formation surface extends while facing the carbon nanotube formation surface of the object to be accommodated with a space therebetween, and the gas supply chamber and the reaction chamber communicate with each other And a gas passage forming member having a plurality of outlets for blowing the reaction gas in the gas supply chamber to the reaction chamber, and forming a carbon nanotube at least one of the carbon nanotube formation surface of the object, the gas passage formation member, and the reaction gas A preparation step of preparing a heating source to be heated to a temperature; (ii) a carbon nanotube forming surface of a target object, a gas passage forming member; By supplying the reaction gas to the gas supply chamber in a state where at least one of the reaction gases is heated to the carbon nanotube formation temperature, the surface in which the carbon nanotube formation surface of the object in the reaction chamber extends extends. A carbon nanotube formation step is performed in which the reaction gas in the gas supply chamber is blown out from the outlet toward the carbon nanotube formation surface of the object along the intersecting direction, and carbon nanotubes are formed on the carbon nanotube formation surface of the object. To do.

  The gas supply chamber extends along the surface direction in which the carbon nanotube formation surface extends while facing the carbon nanotube formation surface of the object accommodated in the reaction chamber with a space therebetween. The plurality of air outlets communicate the gas supply chamber and the reaction chamber, and blow out the reaction gas in the gas supply chamber toward an object in the reaction chamber.

  For this reason, when the reactive gas is blown out, the shortest distance L from each outlet to the carbon nanotube forming surface of the object is balanced as much as possible from each outlet to the carbon nanotube forming surface of the object. Has been. For this reason, in the same carbon nanotube formation surface among objects, the dispersion | variation in the property of the carbon nanotube formed in each site | part of the carbon nanotube formation surface is reduced.

  (2) A carbon nanotube production apparatus according to the present invention is a carbon nanotube production apparatus for producing carbon nanotubes on an object having a carbon nanotube formation surface for forming carbon nanotubes, comprising: (i) a substrate; and (ii) ) A facing wall provided on the substrate and facing the carbon nanotube forming surface of the target object with a space therebetween, extending along the surface direction in which the carbon nanotube forming surface of the target object extends, and the facing wall A plurality of air outlets formed so as to penetrate, a gas supply chamber that extends along a surface direction in which the carbon nanotube forming surface of the object extends using a facing wall and communicates with the air outlet, and a reaction chamber A gas passage forming member having a gas discharge passage communicating with the gas passage, and (iii) a carbon nanotube forming surface of the object provided on the substrate, a gas passage shape Member, comprising a heating source for heating at least one of carbon nanotube formation temperature of the reaction gas.

  The gas supply chamber extends along the surface direction in which the carbon nanotube formation surface extends while facing the carbon nanotube formation surface of the object accommodated in the reaction chamber with a space therebetween. The plurality of air outlets communicate the gas supply chamber and the reaction chamber, and blow out the reaction gas in the gas supply chamber toward an object in the reaction chamber.

  For this reason, when the reactive gas is blown out, the shortest distance L from each outlet to the carbon nanotube forming surface of the object is balanced as much as possible from each outlet to the carbon nanotube forming surface of the object. Has been. For this reason, in the same carbon nanotube formation surface, the dispersion | variation in the growth of the carbon nanotube formed in the same carbon nanotube formation surface is reduced.

  According to the present invention, the gas supply chamber is extended along the surface direction in which the carbon nanotube formation surface extends while facing the carbon nanotube formation surface of the object accommodated in the reaction chamber with a space therebetween. Yes. The plurality of air outlets communicate the gas supply chamber and the reaction chamber, and blow out the reaction gas in the gas supply chamber toward an object in the reaction chamber. For this reason, when the reactive gas is blown out, the shortest distance L from each outlet to the carbon nanotube forming surface of the object is balanced as much as possible from each outlet to the carbon nanotube forming surface of the object. Has been. For this reason, in the same carbon nanotube formation surface, the dispersion | variation in the growth of the carbon nanotube formed in the same carbon nanotube formation surface is reduced.

1 is a cross-sectional view illustrating a concept of a carbon nanotube production apparatus according to Embodiment 1. FIG. FIG. 4 is a cross-sectional view of the carbon nanotube manufacturing apparatus according to Embodiment 1 along different directions. FIG. 3 is a plan view of the main part of the carbon nanotube production apparatus according to the first embodiment. It is sectional drawing which concerns on Embodiment 1 and shows the relationship between a 1st blower outlet and a 2nd blower outlet, and a target object. 3 is an electron micrograph showing the properties of carbon nanotubes formed on an object according to Example 1. FIG. 4 is an electron micrograph showing the properties of carbon nanotubes formed on an object according to Example 2. FIG. 6 is an electron micrograph showing the properties of carbon nanotubes formed on an object according to Example 3. FIG. 6 is an electron micrograph showing the properties of carbon nanotubes formed on an object according to Comparative Example 1. FIG. It is sectional drawing which concerns on Embodiment 3 and shows the concept of a carbon nanotube manufacturing apparatus. It is sectional drawing which concerns on Embodiment 4 and shows the concept of a carbon nanotube manufacturing apparatus. FIG. 10 is a cross-sectional view of the carbon nanotube manufacturing apparatus according to the fifth embodiment along different directions. It is sectional drawing which concerns on Embodiment 6 and shows the concept of a carbon nanotube manufacturing apparatus. FIG. 10 is a cross-sectional view illustrating a concept of a carbon nanotube production apparatus according to Embodiment 7. 2 is a cross-sectional view showing a concept of a carbon nanotube production apparatus used in Comparative Example 1. FIG. It is sectional drawing along a different direction which shows the concept of the carbon nanotube manufacturing apparatus used in the comparative example 1. FIG.

  Preferably, when the reactive gas is blown, when the shortest distance L from each blowout port to the same carbon nanotube formation surface of the target is displayed as 100, relative to each blowout port, it is set within a range of 75 to 125. The shortest distance L from each air outlet to the carbon nanotube formation surface of the object is balanced. In this case, variation in the properties of the carbon nanotubes is reduced. The property means at least one of at least one of the length, diameter, number, number of layers, crystallinity, density, weight, distribution, etc. of the carbon nanotube.

  Preferably, the carbon nanotube formation surface of the object has a first carbon nanotube formation surface and a second carbon nanotube formation surface, and a first operation for forming carbon nanotubes on the first carbon nanotube formation surface, The second operation of forming carbon nanotubes on the two carbon nanotube formation surface is independently controlled. In this case, if the first operation and the second operation are controlled independently, the properties of the carbon nanotube formed on the first carbon nanotube formation surface by the first operation and the second operation on the second carbon nanotube formation surface are formed. It is also possible to change the properties of the carbon nanotubes to be produced. Of course, the property of the first carbon nanotube formed on the first carbon nanotube formation surface by the first operation and the property of the second carbon nanotube formed on the second carbon nanotube formation surface by the second operation are made the same or approximate. You can also

  Preferably, the extension line extending from the center line of the plurality of outlets toward the object is a predetermined angle (corresponding to θ1, θ2 shown in FIG. 4) with respect to the surface direction in which the carbon nanotube formation surface of the object extends. θ1, θ2 = 70 to 110 °). In this case, variation in the properties of the carbon nanotubes is reduced.

  Preferably, the carbon nanotube formation surface of the object has a first carbon nanotube formation surface and a second carbon nanotube formation surface, and a first operation for forming carbon nanotubes on the first carbon nanotube formation surface, The second operation of forming carbon nanotubes on the two carbon nanotube formation surface is independently controlled. In this case, if the first operation and the second operation are controlled independently, the properties of the carbon nanotube formed on the first carbon nanotube formation surface by the first operation and the second operation on the second carbon nanotube formation surface are formed. It is also possible to change the properties of the carbon nanotubes to be produced. The property means at least one of the length, diameter, number, number of layers, crystallinity, density, weight, distribution, etc. of the carbon nanotube. Of course, the property of the first carbon nanotube formed on the first carbon nanotube formation surface by the first operation and the property of the second carbon nanotube formed on the second carbon nanotube formation surface by the second operation are made the same or approximate. You can also In addition, it is preferable in production that the first operation and the second operation are performed at the same time. Furthermore, the first operation and the second operation may be performed while shifting the time while partially overlapping in time.

  Preferably, (a) the carbon nanotube formation surface of the target object has a first carbon nanotube formation surface and a second carbon provided at different positions (for example, a front surface, a back surface, or a side surface when the target object is a substrate). (B) the facing wall has a first facing wall facing the first carbon nanotube forming surface of the object with a first interval, and a second carbon nanotube forming surface of the object. And (c) the air outlet is a first air outlet formed in the first face wall and a second air wall formed in the second face wall. (D) the gas supply chamber is connected to the first gas supply source, and is connected to the first gas supply chamber, the second gas supply source, and the second gas supply chamber. A second gas supply chamber that communicates with the air outlet. , (E) the heating source is configured to use at least one of the first reaction gas for forming the carbon nanotubes on the first carbon nanotube formation surface, the first carbon nanotube formation surface of the object, and the first gas supply chamber as the first carbon. At least one of a first heating source for heating to the nanotube formation temperature, a second reaction gas for forming carbon nanotubes on the second carbon nanotube formation surface, a second carbon nanotube formation surface of the object, and a second gas supply chamber And a second heating source for heating to a temperature for forming the second carbon nanotubes. In this case, the first operation for forming the carbon nanotubes on the first carbon nanotube formation surface and the second operation for forming the carbon nanotubes on the second carbon nanotube formation surface can be controlled independently. In this case, if the first operation and the second operation are controlled independently, the properties of the carbon nanotube formed on the first carbon nanotube formation surface by the first operation and the second operation on the second carbon nanotube formation surface are formed. It is also possible to change the properties of the carbon nanotubes to be produced. The property means at least one of the length, diameter, number, number of layers, crystallinity, density, weight, distribution, etc. of the carbon nanotube. Of course, the properties of the carbon nanotubes formed on the first carbon nanotube formation surface by the first operation and the properties of the carbon nanotubes formed on the second carbon nanotube formation surface by the second operation can be made the same or approximate. As described above, the first operation and the second operation may be performed simultaneously in time, or may be performed while being shifted in time.

  Preferably, in forming the carbon nanotube, one end side of the object can be sandwiched between the pair of first installation parts, and the other end side of the object can be sandwiched between the pair of second installation parts. Then, by displacing the first installation part and the second installation part in a direction in which the first installation part and the second installation part are relatively separated from each other along the surface direction of the object, tension is applied in the surface direction of the object, and excessive bending deformation of the object is caused. It is suppressed. In this case, when the flow rate per unit time of the first reaction gas blown out from the first outlet is not equal to the flow rate per unit time of the second reaction gas blown out from the second outlet, per unit time. Even so, displacement of the carbon nanotube formation surface of the object in the thickness direction of the object is suppressed. In this way, carbon nanotubes can be formed on the object while applying tension in the surface direction of the object.

  Preferably, the outlet of the gas discharge passage of the gas passage forming member is disposed at a position facing the side end surface of the object. In this case, the reaction gas that has come into contact with the carbon nanotube formation surface of the object can be quickly discharged from the gas discharge passage after the carbon nanotubes are formed. For this reason, it is suppressed that the reacted gas after forming the carbon nanotube remains in the reaction chamber. In this case, it can contribute to formation of a favorable carbon nanotube. In the carbon nanotube formation reaction, the carbon source and process conditions are not particularly limited. Examples of the carbon source for supplying carbon for forming carbon nanotubes include aliphatic hydrocarbons such as alkanes, alkenes, and alkynes, aliphatic compounds such as alcohols and ethyls, and aromatic compounds such as aromatic hydrocarbons. Therefore, a CVD method (thermal CVD, plasma CVD, remote plasma CVD method, etc.) using an alcohol-based source gas or a hydrocarbon-based source gas is exemplified as the carbon source. Examples of the alcohol-based source gas include gases such as methyl alcohol, ethyl alcohol, propanol, butanol, pentanol, and hexanol. Further, examples of the hydrocarbon-based source gas include methane gas, ethane gas, acetylene gas, and propane gas.

(Embodiment 1)
1 to 4 show the first embodiment. The carbon nanotube production apparatus produces carbon nanotubes on the carbon nanotube formation surfaces 11 and 12 of the object 1 for forming carbon nanotubes. Here, as shown in FIGS. 1 to 3, the object 1 has a flat substrate shape, and the two-dimensionally extending flat first carbon nanotube formation surfaces 11 facing each other, 2 A flat second carbon nanotube forming surface 12 which is dimensionally arranged. The material of the object 1 is not particularly limited, and examples thereof include silicon and metal. Examples of the metal include iron, titanium, copper, aluminum, iron alloys (including stainless steel), titanium alloys, copper alloys, and aluminum alloys. As can be understood from FIG. 3, the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12 have a flat shape extending in a two-dimensional direction, and the X direction (longitudinal direction), which is one direction, It extends in the Y direction (width direction), which is the other direction that intersects (orthogonally). A catalyst is preferably present on the carbon nanotube formation surfaces 11 and 12 of the object 1. As the catalyst, a transition metal is usually used. In particular, metals of Group V to VIII are preferable. Depending on the target value of the density of the carbon nanotube aggregate, for example, iron, nickel, cobalt, molybdenum, copper, chromium, vanadium, nickel vanadium, titanium, platinum, palladium, rhodium, ruthenium, silver, gold, and alloys thereof Is exemplified. The catalyst is preferably an AB type alloy. Here, A is preferably at least one of iron, cobalt, and nickel, and B is preferably at least one of titanium, vanadium, zirconium, niobium, hafnium, and tantalum. In this case, it is preferable to include at least one of an iron-titanium alloy and an iron-vanadium alloy. Furthermore, a cobalt-titanium alloy, a cobalt-vanadium alloy, a nickel-titanium alloy, a nickel-vanadium alloy, an iron-zirconium alloy, and an iron-niobium alloy can be used. In the case of an iron-titanium alloy, titanium is 10% or more, 30% or more, 50% or more, 70% or more (the balance is iron), and 90% or less by mass ratio. In the case of an iron-vanadium alloy, vanadium is 10% or more, 30% or more, 50% or more, 70% or more (the balance is iron), and 90% or less by mass ratio.

  A base 2 shown in FIG. 1 forms the base of a carbon nanotube production apparatus. A gas passage forming member 3 for supplying a reaction gas is provided on the base 2. As shown in FIGS. 1 and 2, the gas passage forming member 3 includes a reaction chamber 30 having a volume for accommodating the target object 1 and a first interval E1 (shortest interval) between the first carbon nanotube formation surface 11 of the target object 1. ) And a second facing wall 32 facing the second carbon nanotube forming surface 12 of the object 1 with a second spacing E2. It is preferable that E1 = E2 or E1≈E2 (for example, E1 / E2 = 0.85 to 1.15). In this case, as shown in FIG. 2, the length and other properties of the first carbon nanotube 101 formed on the first carbon nanotube formation surface 11 and the second carbon nanotube 102 formed on the second carbon nanotube formation surface 12 are as follows. Are the same or approximate. The property means physical property and chemical property, and at least one of the length, diameter, number, number of layers, crystallinity, density, weight, distribution, etc. of the carbon nanotube is exemplified. However, in some cases, when the properties of the first carbon nanotube 101 and the second carbon nanotube 102 are changed, E1 <E2 or E1> E2 may be satisfied.

  As shown in FIGS. 1 and 2, the first facing wall 31 is substantially parallel to the first carbon nanotube formation surface 11 of the object 1, and the first carbon nanotube formation surface 11 of the object 1 extends. It extends two-dimensionally along the first surface direction (arrow S1 direction), and extends in the X direction and the Y direction described above. In this case, the property of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11 of the object 1 is advantageous in suppressing variations in the first carbon nanotube formation surface 11. The second facing wall 32 is substantially parallel to the second carbon nanotube formation surface 12 of the object 1 and extends along the surface direction (arrow S2 direction) in which the second carbon nanotube formation surface 12 of the object 1 extends. Extending two-dimensionally and extending in the X and Y directions described above. In this case, it is advantageous for suppressing variations in the properties of the first carbon nanotubes 101 formed on the second carbon nanotube formation surface 12 of the object 1.

  As shown in FIG. 1 and FIG. 2, the gas passage forming member 3 is formed on the first facing wall 31 on the second facing wall 32 and the plurality of first air outlets 41 formed so as to penetrate the first facing wall 31 in the thickness direction. A first surface direction (S1) in which the first carbon nanotube forming surface 11 of the object 1 extends using a plurality of second air outlets 42 formed so as to penetrate through this in the thickness direction and the first facing wall 31. The second carbon nanotube forming surface 12 of the object 1 extends using the first gas supply chamber 51 extending along the direction) and communicating with the first air outlet 41 and the second facing wall 32. A second gas supply chamber 52 extending along the surface direction (direction S2) and communicating with the second outlet 42, and a first gas discharge passage 33 communicating with the reaction chamber 30 via the first outlet 38 thereof. (See FIG. 2) and communicated with the reaction chamber 30 through the second outlet 39 thereof. The second gas discharge passage 34 has a (see FIG. 2). The first blower outlet 41 faces the first carbon nanotube formation surface 11 of the object 1. The second air outlet 42 faces the second carbon nanotube formation surface 12 of the object 1.

  As shown in FIG. 2, the first gas supply chamber 51 is formed so as to face the first carbon nanotube formation surface 11 of the object 1 and is a box-shaped passage, and from the width dimension D2 of the object 1 Also has a large width dimension D20. The second gas supply chamber 52 is formed so as to face the first carbon nanotube formation surface 11 of the object 1 and is a box-shaped passage, and has a width dimension D20 larger than the width dimension D2 of the object 1. . As shown in FIG. 2, the box-shaped passage is a flat box-shaped passage extending in a two-dimensional direction (X direction, Y direction). This is because the first reaction gas is sprayed as uniformly as possible on the first carbon nanotube formation surface 11 to form the first carbon nanotube 101 as uniformly as possible. Further, the second reactive gas is sprayed as uniformly as possible on the second carbon nanotube forming surface 12 to form the second carbon nanotube 102 as uniformly as possible. In order to reduce the variation in the properties of the carbon nanotubes 101 and 102, when the cross-sectional area of the first gas supply chamber 51 is SA1, and the cross-sectional area of the second gas supply chamber 52 is SA2, SA1 = SB2, SA1≈SB2 is preferable. In some cases, SA1 / SB2 == 0.8 to 1.2, or 0.9 to 1.1. However, it is not limited to this. In the present embodiment, as shown in FIG. 2, the first gas supply chamber 51 is disposed above the object 1, and the second gas supply chamber 52 is disposed below the object 1.

  The plurality of first air outlets 41 are preferably formed on the substantially entire surface (excluding the peripheral portion) of the first facing wall 31 at a substantially equal interval in a staggered arrangement. In this case, the first reactive gas can be sprayed as uniformly as possible, which can contribute to the reduction in variation in properties of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11. Note that the arrangement is not limited to the staggered arrangement, and as long as the first carbon nanotubes 101 can contribute to the reduction in variation in the properties of the first carbon nanotubes 101, the plurality of first air outlets 41 may be formed in a scattered manner on the first facing wall 31. good. Similarly, it is preferable that the plurality of second air outlets 42 are formed in the second facing wall 32 at a substantially equal interval in a staggered arrangement. In this case, it is possible to contribute to a reduction in variation in properties of the second carbon nanotubes 102 formed on the second carbon nanotube formation surface 12. It is not limited to the staggered arrangement.

  As can be understood from FIG. 4, the first air outlet 41 is a circular hole having an inner diameter DW1 (for example, 0.2 to 8 millimeters, 0.3 to 5 millimeters), depending on the size of the object 1 and the like. Can be formed. If the pitch between the central axes P1 of the first air outlets 41 adjacent to each other is PA1, and the inner diameter of the first air outlet 41 is DW1, the pitch PA1 = DW1 × α1 can be obtained. Examples of α1 include a range of 2 to 50 and a range of 3 to 25. However, it is not limited to this. The same applies to the inner diameter DW2 of the second outlet 42 and the pitch PA2 between the central axes P2 of the second outlet 42. Further, in order to uniformly introduce the source gas into the surface of the object having a large area, the pitch may be reduced or the hole diameter may be increased as the gas supply is further away.

  According to the present embodiment, as can be understood from FIG. 4, which is a cross-sectional view showing the thickness of the object 1, the first carbon nanotube formation surface 11 of the object 1 is formed from the central axis P <b> 1 of the plurality of first outlets 41. The extension line PK1 extending toward the surface is specifically within a first predetermined angle θ1 (θ1 = 70 to 110 °) with respect to the surface direction (S1 direction) in which the first carbon nanotube formation surface 11 of the object 1 extends. Is preferably set to intersect within θ1 = 85 to 95 °. As shown in FIG. 4, the extension line PK2 extending from the central axis P2 of the plurality of second outlets 42 toward the second carbon nanotube formation surface 12 of the object 1 is the second carbon nanotube formation surface of the object 1 12 is set so as to intersect with the surface direction (S2 direction) extending within 12 within a second predetermined angle θ2 (θ2 = 70 to 110 °), specifically within θ2 = 85 to 95 °. Is preferred. θ1 and θ2 may be 88 to 92 °, particularly 90 °.

  As shown in FIG. 2, in the gas passage forming member 3, the first facing wall 31 and the second facing wall 32 are connected to each other by a first subwall 61 and a second subwall 62. The first outlet 38 of the reaction chamber 30 is formed in the first subwall 61 so as to face the one end surface 14 of the object 1 while approaching. The second outlet 39 of the reaction chamber 30 is formed in the second sub-wall 62 so as to face the other side end face 15 of the object 1 while approaching.

  As shown in FIG. 2, when the thickness TA of the object 1 is relatively thick, the distance between the first outlet 38 and the side end face 14 is M1, and the distance between the second outlet 39 and the side end face 15 is M2. When the thickness of the object 1 is TA, M1 is exemplified as (0.3-7) × TA or (0.5-5) × TA. However, it is not limited to this. When the thickness of the first sub-wall 61 is TE, M1 is exemplified as (0.3-7) × TE or (0.5-5) × TE. However, it is not limited to this. As described above, the first outlet 38 approaches the side end surface 14 of the object 1 while facing the side end surface 14. Therefore, it is advantageous to quickly discharge the reaction gas in which the carbon nanotubes 101 and 102 are formed from the first outlet 38 to the first gas discharge passage 33. Similarly, M2 is exemplified as (0.3-5) × TA or (0.5-2) × TA. In this case, the second outlet 39 approaches the side end face 15 of the object 1 while facing it. For this reason, it is advantageous to quickly discharge the reaction gas in which the carbon nanotubes 101 and 102 are formed from the second outlet 39 to the second gas discharge passage 34. Here, in order to make the properties of the first carbon nanotube 101 and the second carbon nanotube 102 the same or approximate, M1 = M2 or M1≈M2 (in the range of M1 / M2 = 0.7 to 1.3). , 0.9 to 1.1).

  As shown in FIG. 2, the first gas discharge passage 33 is formed using a first sub wall 61 and a first side wall 63 outside the first sub wall 61, and is not shown on the drain side. It leads to. The second gas discharge passage 34 is formed using the second subwall 62 and the second side wall 64 outside the second subwall 62 and is connected to the drain side.

  Furthermore, at least one of the first carbon nanotube formation surface 11 of the object 1, the gas passage formation member 3, and the first reaction gas in the first gas supply chamber 51 is changed to a carbon nanotube formation temperature (for example, about 400 to 1000 ° C., A first heating source 71 for heating to 550 to 700 ° C. is provided on the base 2. A second heating source 72 for heating at least one of the second carbon nanotube forming surface 12 of the object 1, the gas passage forming member 3, and the second reaction gas in the second gas supply chamber 52 to the carbon nanotube forming temperature. Is provided on the base 2. Since the heating sources 71 and 72 are disposed outside the gas supply chambers 51 and 52, it is advantageous for heating the entire gas supply chambers 51 and 52 and the entire passage forming member 3.

  The first heating source 71 is preferably disposed on the outside (upper side) of the first gas supply chamber 51 and is formed of a lamp heater that emits near infrared rays. The second heating source 72 is preferably disposed on the outer side (upper side) of the second gas supply chamber 52 and is formed of a lamp heater that emits near infrared rays. The heating sources 71 and 72 can heat the passage forming member 3 itself and the reaction gas in the passage forming member 3. In addition, it is preferable that the whole channel | path formation member 3 is formed with the material (for example, quartz glass) which can permeate | transmit near infrared rays. In this case, the first heating source 71 and the second heating source 72 can heat the object 1 in the reaction chamber 30 to the carbon nanotube formation temperature. The heat sources 71 and 72 are covered with a cover member 75 from the outside.

  It is preferable that the first heating source 71 and the second heating source 72 can be controlled independently from each other by the control device. In this case, it is advantageous to independently control the temperature T1 of the first carbon nanotube formation surface 11 of the object 1 and the temperature T2 of the second carbon nanotube formation surface 12 of the object 1. In addition, when the target object 1 has conductivity and magnetic permeability such as iron or an iron alloy, the first heating source 71 and the second heating source 72 are an induction heating method in which the target object 1 is heated by electromagnetic induction. Also good. In the case of induction heating, the surfaces of the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12 can be intensively and quickly heated by the skin effect. Furthermore, other heating methods may be used.

  As shown in FIG. 1, the first gas supply chamber 51 is connected via a first supply passage 81 that can supply the first reaction gas and the first carrier gas. The first supply passage 81 is provided with a first supply valve 81a for the first reactive gas and a first supply valve 81c for the first carrier gas. The second gas supply chamber 52 is connected via a second supply passage 82 that can supply the second reaction gas and the second carrier gas. The second supply passage 82 is provided with a second supply valve 82a for the second reaction gas and a second supply valve 82c for the second carrier gas. The first supply passage 81 and the second supply passage 82 are preferably provided with a flow meter for measuring the flow rate of each gas to be supplied. Furthermore, it is preferable to provide the reaction gas outlets 41 and 42 and the heating sources 71 and 72 symmetrically with respect to the object 1. In this case, it is advantageous to suppress variation in the difference in properties (for example, at least one of length, diameter, number, number of layers, crystallinity, density, etc.) of the carbon nanotubes formed on both surfaces of the object. .

  Now, the carbon nanotube formation process will be described. First, it is preferable that a catalyst is supported on each of the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12 of the object 1. The catalyst can be formed on the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12 of the object 1 by vapor deposition, sputtering, dipping, or the like.

  Thereafter, a carbon nanotube formation step is performed. That is, as shown in FIGS. 1 and 2, the object 1 is installed in the reaction chamber 30 via the installation unit 18. The installation unit 18 may be a fixed type or a conveyance roller. If it is a fixed type, carbon nanotubes are formed with the object 1 fixed. If it is a conveyance roller, the carbon nanotubes 11 and 12 can be formed continuously, conveying the target object 1 continuously in the conveyance direction, and productivity can be improved. In the carbon nanotube formation step, the reaction chamber 30 is evacuated. Further, the first heating source 71 and the second heating source 72 are turned on to raise the temperature of the first carbon nanotube forming surface 11 and the second carbon nanotube forming surface 12 of the object 1 to a predetermined temperature (for example, 300 to 600 ° C.). Keep it.

  In this state, a carrier gas (argon gas or nitrogen gas) is supplied from the first supply passage 81 to the reaction chamber 30 via the first gas supply chamber 51 and the first outlet 41 and the carrier gas is supplied from the second supply passage 82. Gas is supplied to the reaction chamber 30 through the second gas supply chamber 52 and the second outlet 42, and the pressure in the reaction chamber 30 is adjusted. Thereafter, the first reaction gas is supplied from the first supply passage 81 to the first gas supply chamber 51, and the second reaction gas is supplied from the second supply passage 82 to the second gas supply chamber 52. The first reaction gas supplied to the first gas supply chamber 51 is blown out from the plurality of first blowout ports 41 toward the first carbon nanotube formation surface 11 of the object 1 so as to collide with the first reaction gas. The second reaction gas supplied to the second gas supply chamber 52 is blown out so as to collide with the second carbon nanotube formation surface 12 of the object 1 from the plurality of second blow-out ports 42. The first reaction gas and the second reaction gas can be the same amount and the same type.

  When the above-described carbon nanotube formation step is performed, as can be understood from FIG. 2, the first carbon nanotube 101 is formed on the first carbon nanotube formation surface 11 of the object 1, and the second carbon of the object 1 is formed. Second carbon nanotubes 102 are formed on the nanotube formation surface 12. The first carbon nanotubes 101 basically grow in a direction substantially perpendicular to the first carbon nanotube formation surface 11. The second carbon nanotubes 102 basically grow in a direction substantially perpendicular to the second carbon nanotube formation surface 12.

  When the first reactive gas is blown out, when the shortest distance L1 (see FIG. 4) from each first outlet 41 to the same first carbon nanotube forming surface 11 of the object 1 is displayed as 100, The one outlet 41 is set within a range of 75 to 125. Specifically, it is preferable to set within the range of 90 to 110 (particularly within the range of 95 to 105, 100) over each first outlet 41. Therefore, for each first air outlet 41, the shortest distance L1 from the first air outlet 41 to the first carbon nanotube formation surface 11 of the object 1 is balanced as much as possible. In this case, variations in the properties (for example, at least one of length, diameter, number, number of layers, crystallinity, density, distribution, etc.) of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11 are suppressed. The For example, regarding the first carbon nanotube 101, the difference in length can be suppressed to a variation of 10% in the positive mass. Similarly, when the second reaction gas is blown out, when the shortest distance L2 (see FIG. 4) from each second blow-out opening 42 to the same second carbon nanotube formation surface 12 of the object 1 is displayed as 100, relative display is performed. The second outlets 42 are set within a range of 75 to 125. Specifically, it is preferable to set within the range of 90 to 110 (particularly within the range of 95 to 105) over each second outlet 42. For this reason, the shortest distance L2 from each 2nd blower outlet 42 to the 2nd carbon nanotube formation surface 12 of the target object 1 is balanced as much as possible. In this case, variations in the properties (for example, at least one of the length, diameter, number, number of layers, crystallinity, density, distribution, etc.) of the second carbon nanotubes 102 formed on the second carbon nanotube formation surface 12 are suppressed. The For example, the difference in length of the second carbon nanotubes 102 can be suppressed to a variation of 10% positive mass.

  According to the above-described embodiment, the flow rates per unit time of the first reaction gas and the second reaction gas are basically the same, and L1 and L2 have sizes corresponding to each other. Therefore, with respect to the difference in properties (for example, at least one of length, diameter, number, number of layers, crystallinity, density, distribution, etc.) between the first carbon nanotube 101 and the second carbon nanotube 102, 10% Can be suppressed. In this case, the outputs of the heating sources 71 and 72 are preferably basically the same. Further, in consideration of reducing variations in the first carbon nanotube 101 and the second carbon nanotube 102, the catalyst supported on the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12 of the object 1 is also supported. It is preferable that the amount, loading density and composition are basically the same. The supported density means the catalyst weight per unit area of the carbon nanotube formation surface.

  According to the present embodiment, in the carbon nanotube formation step, as shown in FIG. 1, the first gas supply chamber 51 is supplied with the first reaction gas from the opposite directions (directions of arrows W10 and W11). The room 51 is supplied. As a result, it is possible to contribute to a reduction in variation in properties of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11 of the object 1. As shown in FIG. 1, also for the second gas supply chamber 52, the second reaction gas is supplied to the second gas supply chamber 52 from opposite directions (arrows W20 and W21 directions). Thereby, it is possible to contribute to the reduction in variation in the properties of the carbon nanotubes formed on the second carbon nanotube formation surface 12 of the object 1. When the formation of the first carbon nanotube 101 and the second carbon nanotube 102 is completed, the object 1 is taken out from the reaction chamber 30.

  As described above, according to the present embodiment, the gas supply chambers 51, 52 face the carbon nanotube formation surfaces 11, 12 of the object 1 accommodated in the reaction chamber 30 with a space therebetween, while forming the carbon nanotubes. It is extended along the surface direction (S1, S2 direction) where the surfaces 11 and 12 extend. The plurality of outlets 41, 42 communicate the gas supply chambers 51, 52 and the reaction chamber 30 and blow out the reaction gas in the gas supply chambers 51, 52 to the reaction chamber 30. For this reason, when the reactive gas is blown out, the shortest distances L1 and L2 from the air outlets 41 and 42 to the carbon nanotube formation surfaces 11 and 12 of the object 1 are connected to the object 1 from the air outlets 41 and 42, respectively. The shortest distances L1 and L2 to the carbon nanotube formation surfaces 11 and 12 are balanced as much as possible. For this reason, variation in properties (for example, length, diameter, number, number of layers, crystallinity, density, distribution) of the first carbon nanotubes 101 formed on the same first carbon nanotube formation surface 11 of the target 1 is reduced. The Similarly, variation in properties (for example, length, diameter, number, number of layers, crystallinity, density, distribution) of the second carbon nanotubes 102 formed on the same second carbon nanotube formation surface 12 of the target 1 is reduced. Is done.

  According to the present embodiment, the first operation of forming the first carbon nanotube 101 on the first carbon nanotube formation surface 11 of the object 1 based on the first reaction gas, and the object 1 based on the second reaction gas. The second operation of forming the second carbon nanotube 102 on the second carbon nanotube formation surface 12 can be independently controlled. Specifically, the valves 81a and 82a can be controlled independently of each other. The valves 81c and 82c can be controlled independently of each other. The heating temperatures by the heating sources 71 and 72 can be controlled independently of each other. If the first operation and the second operation are independently controlled in this way, the properties of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11 by the first operation and the second carbon nanotube formation surface 12 are controlled. The property of the second carbon nanotube 102 formed by the second operation can be made the same or approximate. Moreover, the output of the heating sources 71 and 72 can also be controlled independently.

  According to this embodiment, as can be understood from FIG. 2, the first outlet 38 of the reaction chamber 30 of the gas passage forming member 3 is disposed at a position facing the side end surface 14 of the object 1. The first outlet 39 is disposed at a position facing the side end surface 15 of the object 1. In this case, for the first reaction gas that has contacted the first carbon nanotube formation surface 11 of the target object 1, the first carbon nanotube 101 is formed on the first carbon nanotube formation surface 11, and then promptly in the directions of arrows N 1 and N 2. From the first outlet 38 and the second outlet 39, the gas discharge passages 33 and 34 can be discharged. For this reason, it is suppressed that the reacted gas after forming the first carbon nanotube 101 remains in the reaction chamber 30. In this case, it can contribute to the formation of a good first carbon nanotube 101. Similarly, for the second reaction gas that collides with and contacts the second carbon nanotube formation surface 12 of the object 1, the second carbon nanotube 102 is formed on the second carbon nanotube formation surface 12, and the arrow N1 is promptly formed. , N2 direction, the gas can be discharged from the first outlet 38 and the second outlet 39 to the gas discharge passages 33 and 34. For this reason, it is suppressed that the reacted gas after forming the second carbon nanotube 102 remains in the reaction chamber 30. In this case, it can contribute to the formation of a favorable second carbon nanotube 102.

(Embodiment 2)
This embodiment basically has the same configuration and the same function and effect as the first and second embodiments. Hereinafter, the description will focus on the different parts. A first operation for forming the first carbon nanotube 101 on the first carbon nanotube formation surface 11 of the object 1 based on the first reaction gas, and a second carbon nanotube formation surface 12 of the object 1 based on the second reaction gas. And the second operation for forming the second carbon nanotubes 102 are independently controlled. By independently controlling the first operation and the second operation, the properties of the first carbon nanotubes 101 formed by the first operation on the first carbon nanotube formation surface 11 and the second on the second carbon nanotube formation surface 12 are controlled. The property of the second carbon nanotube 102 formed by the operation is changed.

  In the carbon nanotube formation step, the independent control includes (a) a mode in which the supply flow rate V1 per unit time of the first reaction gas and the supply flow rate V2 per unit time of the second reaction gas are changed, and (b) the first heating. The output of the source 71 and the second heating source 72 is changed to change the temperature T1 of the first carbon nanotube formation surface 11 and the temperature T2 of the second carbon nanotube formation surface 12, (c) the first carbon nanotube formation surface 11 Examples are a mode in which the catalyst loading and / or catalyst composition on the second carbon nanotube formation surface 12 is changed, and (e) a mode in which the composition of the first reaction gas and the second reaction gas is changed.

Accordingly, the length of the first carbon nanotube 101 formed on the first carbon nanotube formation surface 11 can be made relatively long, and the length of the second carbon nanotube 102 formed on the second carbon nanotube formation surface 12 can be made relatively. Can be shortened. Conversely, the length of the first carbon nanotube 101 may be shorter than the length of the second carbon nanotube 102, and the length of the second carbon nanotube 102 may be relatively longer than the first carbon nanotube 101. Alternatively, the density of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11 can be relatively higher than the density of the second carbon nanotubes 102, and the second carbon formed on the second carbon nanotube formation surface 12 can be obtained. The density of the nanotubes 102 can be relatively lower than the density of the first carbon nanotubes 101. The reverse is also acceptable. When applied to a capacitor electrode, when the carbon nanotube is long, the surface area increases, and a high chargeable amount of electricity can be expected. When the carbon nanotube is short, an improvement in responsiveness can be expected. The material of the object 1 may be silicon or metal. Examples of the metal include iron, titanium, copper, aluminum, iron alloys (including stainless steel), titanium alloys, copper alloys, and aluminum alloys. Depending on the material of the object 1, the first operation and the second operation can be performed so as to change the operation contents.
Example 1
Example 1 was carried out using the carbon nanotube production apparatus shown in FIGS.
(Object 1) In Example 1, the first carbon nanotube 101 formed on the first carbon nanotube formation surface 11 and the second carbon nanotube 102 formed on the second carbon nanotube formation surface 12 of the object 1 The length was almost the same. As the object 1, a 0.5 mm silicon substrate was used. The silicon substrate was polished. The surface roughness of the silicon substrate was Ra5 nanometers.
(Pretreatment) As a first step, the surface of the object 1 was subjected to water repellent treatment. The treatment liquid was a mixture of toluene and hexaorganosilazan at a concentration of 5% by volume. The object 1 was immersed in this treatment solution for 30 minutes. Thereafter, the object 1 was pulled up from the treatment liquid and allowed to dry naturally. As a second step, a coating solution was applied to the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12 of the object 1 by a dip coating method to form an iron-titanium alloy thin film of 30 nm. The catalyst is considered to be island-shaped. The coating solution is obtained by dispersing iron-titanium alloy particles (Fe: 80%, Ti: 20%) in hexane and measuring the absorbance at a wavelength of 680 nm with a visible photometer (CO7500, manufactured by WPA). The solution was adjusted to a concentration of 0.3. In the dip coating method, after dipping in the atmosphere at room temperature, the film was pulled up at a rate of 3 mm / min. After pulling up, hexane evaporated quickly by natural drying.
(CNT formation) Carbon nanotubes were formed by a carbon nanotube production apparatus formed by a thermal CVD apparatus having the structure shown in FIGS. The reaction chamber 30 is evacuated in advance to 10 Pa. Nitrogen gas of 5000 cc / min is introduced from both sides of the object 1 as a carrier gas into the reaction chamber 30 and the pressure in the reaction chamber 30 is set to 1 × 10 ⁵ Pa. It was adjusted. After the surface temperature of the object 1 was raised to 600 ° C., a reaction gas (acetylene gas) serving as a carbon source was introduced from both surfaces of the object 1 for 6 minutes at 1000 cc / min. In this case, the first gas supply chamber 51 was set to 500 cc / min. The second gas supply chamber 52 was set to 500 cc / min. As a result, carbon nanotubes were formed on both the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12 of the object 1. FIG. 5 shows the formed carbon nanotubes. The length of the carbon nanotube was about 94 μm for both the first carbon nanotube 101 and the second carbon nanotube 102.

(Example 2)
(Object 1) In Example 2, the first carbon nanotube 101 formed on the first carbon nanotube formation surface 11 and the second carbon nanotube 102 formed on the second carbon nanotube formation surface 12 of the object 1 Different lengths. The object 1 was the same as in Example 1.
(Pretreatment) Same as Example 1.
(CNT formation) Carbon nanotubes were formed by a carbon nanotube production apparatus formed by a thermal CVD apparatus having the structure shown in FIGS. The reaction chamber 30 is evacuated in advance to 10 Pa. Nitrogen gas of 5000 cc / min is introduced from both sides of the object 1 as a carrier gas into the reaction chamber 30 and the pressure in the reaction chamber 30 is set to 1 × 10 ⁵ Pa. It was adjusted. After the surface temperature of the object 1 is raised to 600 ° C., the first gas supply chamber 51 on the upper side is supplied with the first reaction gas (acetylene gas) at 400 cc / min and the lower second gas supply chamber 52. The second reaction gas (acetylene gas) was set at a flow rate of 1000 cc / min and was simultaneously introduced from both sides of the object 1 for 6 minutes. As a result, carbon nanotubes were formed on both the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12 of the object 1. FIG. 6 shows the carbon nanotubes formed for Example 2. Regarding the length of the carbon nanotube, the first carbon nanotube 101 was about 54 μm. The second carbon nanotube 102 was 184 μm.

Example 3
(Object 1) In Example 3, the first carbon nanotube 101 formed on the first carbon nanotube formation surface 11 and the second carbon nanotube 102 formed on the second carbon nanotube formation surface 12 of the object 1 Different lengths. The object 1 was a silicon substrate having a thickness of 0.5 mm. The surface roughness of the first carbon nanotube formation surface 11 which is the upper surface was Ra 5 nanometers. The surface roughness of the second carbon nanotube formation surface 12 as the lower surface was Ra 100 nanometers, which was rougher than the first carbon nanotube formation surface 11.
(Pretreatment) Same as Example 1.
(CNT formation) Same as Example 1. Carbon nanotubes were formed on both the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12 of the object 1. FIG. 7 shows the carbon nanotubes formed for Example 3. Regarding the length of the carbon nanotube, the first carbon nanotube 101 formed on the first carbon nanotube formation surface 11 which is the upper surface was about 72 μm. The 2nd carbon nanotube 102 formed in the 2nd carbon nanotube formation surface 12 which is a lower surface was 144 micrometers (comparative example 1).
(Object 1) Object 1 was the same as in Example 1.
(Pretreatment) Same as Example 1.
(CNT formation) Carbon nanotubes were formed by a carbon nanotube production apparatus formed by a thermal CVD apparatus having the structure shown in FIGS. In this apparatus, the reaction gas is supplied along the surface direction of the first carbon nanotube formation surface 11 and the second carbon nanotube formation surface 12 of the object 1. Accordingly, the flow direction of the reaction gas is basically 90 ° different from those of Examples 1 to 3. Also in this case, nitrogen gas 5000 cc / min is introduced from both sides of the object 1 as a carrier gas into the reaction chamber 30 which is evacuated to 10 Pa in advance, and the pressure in the reaction chamber 30 is 1 It adjusted to * 10 < ⁵ > Pa. After raising the surface temperature of the object 1 to 650 ° C., 1000 cc of reaction gas (acetylene gas) serving as a carbon source is directed to the surface of the first carbon nanotube 101 which is the upper surface of the object 1 at 400 cc / min. At 6 minutes toward the second carbon nanotube formation surface, which is the lower surface of the object 1, for 6 minutes, the carbon nanotubes are introduced into both the first carbon nanotube formation surface and the second carbon nanotube formation surface of the object 1. Formed. FIG. 8 shows the carbon nanotubes formed in Comparative Example 1. The carbon nanotube formed on the first carbon nanotube formation surface, which is the upper surface, was about 35 μm. Furthermore, the carbon nanotubes were not formed well on the first carbon nanotube formation surface, which is the upper surface. The carbon nanotube formed on the second carbon nanotube formation surface which is the lower surface was 188 μm. In this case, the length and density of the carbon nanotubes were greatly different on the first carbon nanotube formation surface and the second carbon nanotube formation surface.

(Embodiment 3)
FIG. 9 shows a third embodiment. This embodiment basically has the same configuration and the same function and effect as the first and second embodiments. Hereinafter, the description will focus on the different parts. As shown in FIG. 9, a supply passage 810 is provided on one end 51e side of the first gas supply chamber 51, and a supply valve 810a for the first reactive gas and a supply valve 810c for the carrier gas are provided. As shown in FIG. 9, a supply passage 811 is provided at the other end 51f of the first gas supply chamber 51, and a supply valve 811a for the first reactive gas and a supply valve 811c for the carrier gas are provided. When the first reactive gas is supplied to the first gas supply chamber 51, the gas flow rate per unit time can be controlled on the one end 51e side and the other end 51f side of the first gas supply chamber 51. In this case, with respect to the first carbon nanotube formation surface 11, it can be expected that the properties of the first carbon nanotube 11 are changed on the one end 51e side and the other end 51f side.

  As shown in FIG. 9, a supply passage 820 is provided on one end 52e side of the second gas supply chamber 52, and a supply valve 820a for the second reactive gas and a supply valve 820c for the carrier gas are provided. A supply passage 822 is provided on the other end 52f side of the second gas supply chamber 52, and a supply valve 822a for the second reactive gas and a supply valve 822c for the carrier gas are provided. When the second reaction gas is supplied to the second gas supply chamber 52, the gas flow rate per unit time can be controlled on the one end 52e side and the other end 52f side of the second gas supply chamber 52. In this case, with respect to the second carbon nanotube formation surface 12, it can be expected that the properties of the second carbon nanotube 12 are changed between the one end 52e side and the other end 52f side.

(Embodiment 4)
FIG. 10 shows a fourth embodiment. This embodiment basically has the same configuration and the same function and effect as the first and second embodiments. Hereinafter, the description will focus on the different parts. As shown in FIG. 10, the first gas supply chamber 51 and the second gas supply chamber 52 extend along the horizontal direction (horizontal direction). The first reactive gas is supplied to the first gas supply chamber 51 in the direction of arrow W1 (one direction, rightward in FIG. 9). The first reaction gas is blown out from the plurality of first outlets 41 so as to collide with the first carbon nanotube formation surface 11 of the object 1 substantially vertically along the downward direction. Second, the reactive gas is supplied to the second gas supply chamber 52 in the direction of arrow W2 (leftward in the one-way diagram 9). The second reactive gas is blown out from the plurality of second outlets 42 so as to collide with the second carbon nanotube formation surface 12 of the object 1 substantially vertically along the upward direction. In this case, in consideration of the first reaction gas supplied from the first gas supply chamber 51 to the reaction chamber 30 via the first outlet 41, the first reaction gas is fed into the first gas supply chamber 51 by the arrow W1 in FIG. When moving in the direction, the flow rate of the first reaction gas gradually decreases from the upstream region 51u of the first gas supply chamber 51 toward the downstream region 51d. Therefore, if the number of the 1st blower outlets 41 is the same, the internal diameter of the some 1st blower outlet 41 is increasing relatively in the downstream area | region 51d of the 1st gas supply chamber 51 rather than the upstream area | region 51u. Or if the internal diameter of each 1st blower outlet 41 is the same, the number of the several 1st blower outlets 41 per unit area will increase rather than the upstream area | region 51u in the downstream area | region 51d of the 1st gas supply chamber 51. Yes. The reason for this is to reduce variation in the flow rate of the first reaction gas in the first gas supply chamber 51 when it is blown into the reaction chamber 30. According to the present embodiment as described above, it is advantageous to reduce variation in properties of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11.

  The same applies to the second outlet 42. That is, as the second reaction gas moves in the direction of arrow W2 in FIG. 10 in the second gas supply chamber 52, the flow rate of the second reaction gas gradually increases from the upstream region 52u to the downstream region 52d of the second gas supply chamber 52. Decrease. Therefore, if the number of the second outlets 42 is the same, the inner diameters of the plurality of second outlets 42 are relatively increased in the downstream region 52d of the second gas supply chamber 52 than in the upstream region 52u. Or if the internal diameter of each 2nd blower outlet 42 is the same, the number of the some 2nd blower outlets 42 per unit area will be relatively in the downstream area | region 52d of the 2nd gas supply chamber 52 rather than the upstream area | region 52u. It has increased. This is because when the second reaction gas in the second gas supply chamber 52 is blown into the reaction chamber 30, variation in flow rate of the blown gas is reduced. Such an embodiment is advantageous in reducing variation in the properties of the second carbon nanotubes 102 formed on the second carbon nanotube formation surface 12.

(Embodiment 5)
FIG. 11 shows a fifth embodiment. This embodiment basically has the same configuration and the same function and effect as the first and second embodiments. Hereinafter, the description will focus on the different parts. As shown in FIG. 11, the first gas supply chamber 51 and the second gas supply chamber 52 are extended along the vertical direction (height direction, arrow H direction) while being box-shaped passages facing each other. ing. The object 1 is arranged along the vertical direction and has an upper part 1u and a lower part 1d. The carbon nanotube formation surfaces 11 and 12 extend along the height direction (arrow H direction). The first reaction gas supplied to the first gas supply chamber 51 collides with the first carbon nanotube formation surface 11 of the object 1 at an angle of approximately 85 to 95 ° C. along the lateral direction from the plurality of first outlets 41. Be blown out to do. The second reaction gas supplied to the second gas supply chamber 52 collides with the second carbon nanotube formation surface 12 of the object 1 at an angle of approximately 85 to 95 ° along the lateral direction from the plurality of second outlets 42. Be blown out to do.

  According to this embodiment, even when the distance between the upper installation portion 18c and the lower installation portion 18a is long, or even when the thickness TA of the object 1 is thin, the object 1 Of these, the portion 1m between the installation portions 18a and 18c is prevented from drooping downward due to gravity. Further, one end side of the object 1 is sandwiched between the installation parts 18c and 18c, and the other end side of the object 1 is sandwiched between the installation parts 18a and 18a. And the installation parts 18c and 18c and the installation parts 18a and 18a are displaced in the direction which leaves | separates relatively along the surface direction S1, S2 direction of the target object 1. FIG. Thereby, tension | tensile_strength is given to the surface direction S1, S2 direction of the target object 1, and the bending deformation of the site | part 1m of the target object 1 can be suppressed. In this case, the intervals E1 and E2 can be maintained at the target values. In addition, about the unit time, if the flow rate of the 1st reaction gas blown out from the 1st blower outlet 41 and the flow rate of the 1st reaction gas blown out from the 2nd blower outlet 42 are made equivalent, the target 1's It is possible to suppress the differential pressure from acting on the carbon nanotube formation surfaces 11 and 12. As a result, it is suppressed that the site | part 1m of the target object 1 is displaced to the thickness direction of the target object 1 by differential pressure | voltage. In this case, it can contribute to stabilization of the properties of the carbon nanotubes 101 and 102.

(Embodiment 6)
FIG. 12 shows a sixth embodiment. This embodiment basically has the same configuration and the same function and effect as the first and second embodiments. As shown in FIG. 12, the first facing wall 31 and the first gas supply chamber 51 are two-dimensionally along the lateral direction along the surface direction of the first carbon nanotube formation surface 11 of the plate-like object 1. It is extended. The first gas supply chamber 51 formed by using the first facing wall 31 extending in the lateral direction is two-dimensionally laterally along the surface direction of the first carbon nanotube formation surface 11 of the plate-like object 1. It extends along the direction. The first gas supply chamber 51 is a flat box-shaped passage that faces the first carbon nanotube formation surface 11. The 1st blower outlet 41 is formed in the substantially whole area of the 1st facing wall 31 in the shape of a dot at substantially equal intervals. The first reaction gas supplied to the first gas supply chamber 51 is blown out from the plurality of first outlets 41 so as to collide with the first carbon nanotube formation surface 11 of the object 1 substantially vertically along the downward direction. The Since the second gas supply chamber 52 is not formed, carbon nanotubes are formed mainly on the first carbon nanotube formation surface 11 of the object 1. That is, by supplying the reaction gas to the first gas supply chamber 51, a direction (first carbon nanotube) intersecting the surface direction in which the first carbon nanotube formation surface 11 of the object 1 in the reaction chamber 30 extends. The reaction gas in the first gas supply chamber 51 is blown out so as to collide from the first outlet 41 toward the first carbon nanotube formation surface 11 of the object 1 along the formation surface 11. Thereby, carbon nanotubes are formed on the first carbon nanotube formation surface 11 of the object 1.

  Also in the present embodiment, when the reactive gas is blown out, when the shortest distance L1 from each first blow-out port 41 to the same first carbon nanotube forming surface 11 of the object 1 is set as 100, each first is displayed. Over the outlet 41, it is set within the range of 90 to 110 (particularly within the range of 95 to 105, specifically 100). Therefore, the shortest distance L from each 1st blower outlet 41 to the 1st carbon nanotube formation surface 11 of the target object 1 is balanced about each 1st blower outlet 41. FIG. Therefore, it is possible to contribute to the reduction in variation in properties of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11. As can be understood from FIG. 12, since the reaction gas is not directly sprayed on the surface 12x of the object 1 on the side opposite to the first carbon nanotube formation surface 11, the generation of carbon nanotubes on the surface 12x is Limited.

(Embodiment 7)
FIG. 13 shows a seventh embodiment. This embodiment basically has the same configuration and the same function and effect as the first and second embodiments. As shown in FIG. 13, when the first reactive gas is blown out, the shortest distance L1 from each first outlet 41 to the same first carbon nanotube formation surface 11 of the object 1 is set. When the relative display is performed with the shortest distance L1 as 100, the first air outlet 41 is set within a range of 90 to 110 (particularly, within a range of 95 to 105, 100). For this reason, the shortest distance L1 from each 1st blower outlet 41 to the 1st carbon nanotube formation surface 11 of the target object 1 is balanced. In this case, variation in properties of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11 is suppressed. Similarly, when the second reactive gas is blown out, the shortest distance L2 from each second outlet 42 to the same second carbon nanotube forming surface 12 of the object 1 is set. When the relative display is performed with the shortest distance L2 being 100, it is preferable that the distance is set within a range of 75 to 125 over the second air outlets 42. Specifically, it is set within a range of 90 to 110 (particularly within a range of 95 to 105) over each second outlet 42. For this reason, the shortest distance L2 from each 2nd blower outlet 42 to the 2nd carbon nanotube formation surface 12 of the target object 1 is balanced. In this case, variation in the properties of the second carbon nanotubes 102 formed on the second carbon nanotube formation surface 12 is suppressed.

  According to the present embodiment, as shown in FIG. 13, the shortest distance L1 <the shortest distance L2. Therefore, the interval E1 <the interval E2. This can contribute to changing the properties of the first carbon nanotubes 101 formed on the first carbon nanotube formation surface 11 and the second carbon nanotubes 102 formed on the second carbon nanotube formation surface 12. The shortest distance L1 may be greater than the shortest distance L2.

  (Others) The present invention is not limited to the embodiment described above and shown in the drawings, and can be implemented with appropriate modifications within a range not departing from the gist.

  1 is an object, 11 is a first carbon nanotube formation surface, 12 is a second carbon nanotube formation surface, 101 is a first carbon nanotube, 102 is a second carbon nanotube, 14 is a side end surface, 15 is a side end surface, and 2 is a substrate. 3 is a passage forming member, 30 is a reaction chamber, 31 is a first facing wall, 32 is a second facing wall, 33 is a first gas discharge passage, 34 is a second gas discharge passage, 38 is a first outlet, and 39 is The second outlet, 41 is the first outlet, 42 is the second outlet, 51 is the first gas supply chamber, 52 is the second gas supply chamber, 71 is the first heating source, 72 is the second heating source, 81 is A first supply passage 82 is a second supply passage.

Claims (5)

(I) preparing an object having a carbon nanotube formation surface for forming carbon nanotubes;
A reaction chamber for accommodating the object, and a surface direction in which the carbon nanotube formation surface extends while facing the carbon nanotube formation surface of the object accommodated in the reaction chamber with a space therebetween A gas passage forming member having an extended gas supply chamber, a plurality of outlets for communicating the gas supply chamber and the reaction chamber and blowing out the reaction gas in the gas supply chamber to the reaction chamber; A preparation step of preparing a heating source for heating at least one of the carbon nanotube forming surface of the object, the gas passage forming member, and the reaction gas to a carbon nanotube forming temperature;
(Ii) In a state where at least one of the carbon nanotube formation surface of the object, the gas passage formation member, and the reaction gas is heated to the carbon nanotube formation temperature,
By supplying the reaction gas to the gas supply chamber, the reaction in the gas supply chamber is performed along a direction intersecting a surface direction in which the carbon nanotube formation surface of the object in the reaction chamber extends. In performing the carbon nanotube formation step of blowing gas from the outlet toward the carbon nanotube formation surface of the object, and forming the carbon nanotube on the carbon nanotube formation surface of the object ,
The carbon nanotube forming surface of the object has a first carbon nanotube forming surface and a second carbon nanotube forming surface; and a first operation of forming the carbon nanotube on the first carbon nanotube forming surface; The carbon nanotube manufacturing method which controls independently the 2nd operation which forms the said carbon nanotube in the said 2nd carbon nanotube formation surface . In claim 1, when the reactive gas is blown out, when the shortest distance L from the blower outlet to the carbon nanotube formation surface of the object is relatively displayed as 100, the shortest distance L over each blowout outlet is 75. A method for producing carbon nanotubes, wherein the shortest distance L from each outlet to the carbon nanotube formation surface of the object is balanced for each outlet. A carbon nanotube production apparatus for producing carbon nanotubes on an object having a carbon nanotube formation surface for forming carbon nanotubes,
(I) a substrate;
(Ii) A facing wall provided on the base and extending along a surface direction in which the carbon nanotube formation surface of the object extends while facing the carbon nanotube formation surface of the object with a space A plurality of air outlets formed in the facing wall so as to penetrate the facing wall, and extending along a surface direction in which the carbon nanotube forming surface of the object extends using the facing wall, and the A gas passage forming member having a gas supply chamber communicating with the blowout port and a gas discharge passage communicating with the reaction chamber;
(Iii) a heating source provided on the base body and heating at least one of the carbon nanotube formation surface of the object, the gas passage formation member, and the reaction gas to a carbon nanotube formation temperature ;
The carbon nanotube forming surface of the object has a first carbon nanotube forming surface and a second carbon nanotube forming surface provided at different positions,
The facing wall faces the first carbon nanotube forming surface of the object with a first interval, and faces the second carbon nanotube forming surface of the object with a second interval. And a second facing wall
The air outlet has a first air outlet formed in the first facing wall and a second air outlet formed in the second facing wall,
The gas supply chamber is connected to the first gas supply passage and communicates with the first outlet, and the second gas supply chamber is connected to the second gas supply passage and communicates with the second outlet. And
The heating source includes at least one of a first reaction gas for forming the carbon nanotubes on the first carbon nanotube formation surface, the first carbon nanotube formation surface of the object, and the first gas supply chamber. A first heating source for heating to a carbon nanotube formation temperature; a second reaction gas for forming carbon nanotubes on the second carbon nanotube formation surface; a second carbon nanotube formation surface of the object; and a second gas supply chamber. A carbon nanotube production apparatus comprising: a second heating source that heats at least one of them to a second carbon nanotube formation temperature . In Claim 3, the extension line extended toward the target object from the center line of each of the blower outlets is a predetermined angle θ (θ = 70 ~) with respect to the surface direction in which the carbon nanotube formation surface of the target object extends. The carbon nanotube manufacturing apparatus set so that it may cross within 110 degrees). 5. The carbon nanotube production apparatus according to claim 3, wherein an outlet of the reaction chamber of the gas passage forming member is disposed at a position facing a side end surface of the object.