JP5629630B2 - Optical semiconductor device - Google Patents
Optical semiconductor device Download PDFInfo
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- JP5629630B2 JP5629630B2 JP2011085924A JP2011085924A JP5629630B2 JP 5629630 B2 JP5629630 B2 JP 5629630B2 JP 2011085924 A JP2011085924 A JP 2011085924A JP 2011085924 A JP2011085924 A JP 2011085924A JP 5629630 B2 JP5629630 B2 JP 5629630B2
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- 230000003287 optical effect Effects 0.000 title claims description 40
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 239000011347 resin Substances 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 238000007789 sealing Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- QIYHCQVVYSSDTI-UHFFFAOYSA-N 2-(phenyliminomethyl)phenol Chemical class OC1=CC=CC=C1C=NC1=CC=CC=C1 QIYHCQVVYSSDTI-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
本発明は発光素子や受光素子等の光半導体素子を利用した光半導体装置に関する。 The present invention relates to an optical semiconductor device using an optical semiconductor element such as a light emitting element or a light receiving element.
表面実装型の光半導体装置は、現在、広く利用されている。特に、電子機器の小型化の要求がますます高くなっているため、表面実装型の光半導体装置は、ますます求められるようになっている。 Surface mount type optical semiconductor devices are widely used at present. In particular, since the demand for miniaturization of electronic equipment is increasing, surface mount type optical semiconductor devices are increasingly required.
特許文献１には、表面実装型発光装置の製造方法が開示されている。この方法によって、発光部を除く封止樹脂面にＴｉＯ２含有樹脂を塗布することによって、反射部材を形成し、より小型の発光装置を製造できた。しかし、この手法は、電極にＴｉＯ２含有樹脂を塗らないように細かなマスキング処理を要する。このため、マスキングの気密性を保持するための押さえ治具などは大掛かりな設備投資を必要とする。更に、より小型の発光装置を製造しようとすれば、より高い塗布精度を必要とするため、更に大掛かりな設備投資を必要としてしまう。従って、より簡単な工程で発光装置等を製造しうる方法が求められていた。 Patent Document 1 discloses a method for manufacturing a surface-mounted light-emitting device. By this method, a reflective member was formed by applying a TiO 2 -containing resin to the sealing resin surface excluding the light emitting portion, and a smaller light emitting device could be manufactured. However, this technique requires a fine masking process so as not to apply the TiO 2 -containing resin to the electrodes. For this reason, a holding jig or the like for maintaining the airtightness of the masking requires a large capital investment. Furthermore, if an attempt is made to manufacture a smaller light emitting device, higher application accuracy is required, and thus a larger capital investment is required. Accordingly, there has been a demand for a method capable of manufacturing a light emitting device and the like with simpler processes.
本発明の一観点によれば、配線基板上に光半導体素子を配置する工程と、前記光半導体素子を封止樹脂で覆う工程と、前記封止樹脂を不透明な感熱部で覆う工程と、前記感熱部の一部に熱を加え、その部分を透明にする工程と、を有する光半導体装置の製造方法が開示される。 According to one aspect of the present invention, a step of arranging an optical semiconductor element on a wiring board, a step of covering the optical semiconductor element with a sealing resin, a step of covering the sealing resin with an opaque heat-sensitive part, There is disclosed a method of manufacturing an optical semiconductor device having a step of applying heat to a part of the heat sensitive part to make the part transparent.
本発明による製造方法は、光半導体装置の光出射部又は光入射部を感熱材料の透明化によって得る一方で、それ以外の反射部又は遮蔽部を有色状態のままの感熱材料を利用する点に特徴がある。即ち、任意の部分に感熱材料を変色させるための加熱を行うだけで光出射部又は光入射部を形成できる。感熱材料を含む樹脂部は、光半導体素子を封止する樹脂の上から、スプレーやポッティングなどの精度を必要としない手法によって容易に作製できるため、大掛かりな設備投資は不要である。 In the manufacturing method according to the present invention, the light emitting portion or the light incident portion of the optical semiconductor device is obtained by making the heat-sensitive material transparent, while the other reflecting portions or the shielding portions are used in the color-sensitive heat-sensitive material. There are features. That is, the light emitting part or the light incident part can be formed only by performing heating for changing the color of the heat sensitive material in an arbitrary part. Since the resin portion including the heat sensitive material can be easily manufactured from the resin for sealing the optical semiconductor element by a technique that does not require accuracy such as spraying or potting, a large capital investment is not required.
以下、図面に従って本発明を説明する。図１から図４は、本発明による第一の実施形態の光半導体装置の製造方法を示す図である。まず、図１にあるように、配線パターン２を形成した配線基板１上に、発光ダイオード素子やフォトダイオード素子等の光半導体素子３を配置する。光半導体素子３は、導電性ペースト（図示せず）や、ワイヤ４などにより配線パターン２に電気的に接続される。その後、透明な封止樹脂５によって光半導体素子３、ワイヤ４が封止される。 The present invention will be described below with reference to the drawings. 1 to 4 are views showing a method of manufacturing an optical semiconductor device according to the first embodiment of the present invention. First, as shown in FIG. 1, an optical semiconductor element 3 such as a light emitting diode element or a photodiode element is arranged on a wiring board 1 on which a wiring pattern 2 is formed. The optical semiconductor element 3 is electrically connected to the wiring pattern 2 by a conductive paste (not shown), a wire 4 or the like. Thereafter, the optical semiconductor element 3 and the wire 4 are sealed with a transparent sealing resin 5.
次に、図２にあるように、不透明な感熱部６によって、封止樹脂５を被覆する。感熱部６は、例えば、樹脂と有機溶剤とによって構成されるバインダー材料に感熱材料を混合したものを用いる。封止材料５を覆う工程は、例えば、スプレー法、ディップ法、スクリーン印刷法、ポッティング法などを選択できる。被覆後、加熱によって有機溶剤の気化と樹脂硬化を行い、感熱部６を封止樹脂５上に固定する。 Next, as shown in FIG. 2, the sealing resin 5 is covered with an opaque heat-sensitive part 6. As the heat sensitive part 6, for example, a heat sensitive material mixed with a binder material composed of a resin and an organic solvent is used. For example, a spray method, a dipping method, a screen printing method, or a potting method can be selected as the step of covering the sealing material 5. After coating, the organic solvent is vaporized and the resin is cured by heating, and the heat sensitive part 6 is fixed on the sealing resin 5.
次に、図３にあるように、感熱部６のうち、光半導体素子３に該当する部分の上方を加熱し、透明感熱部６ａとする。この一部分のみ加熱するには、例えば、加熱した金属ブロックを感熱部６に押し付けるなどの方法を選択できる。 Next, as shown in FIG. 3, the upper part of the heat sensitive part 6 corresponding to the optical semiconductor element 3 is heated to form a transparent heat sensitive part 6 a. In order to heat only this part, the method of pressing the heated metal block against the heat sensitive part 6 can be selected, for example.
最後に、図４にあるように、配線基板１と不透明感熱部６ｂをダイシング、ブレーキング等の方法によって分割し、個片化する。その後、各々に個片化された光半導体装置は、実装基板などに半田などによって固定される等の通常の電子部品として扱われる。 Finally, as shown in FIG. 4, the wiring board 1 and the opaque heat-sensitive portion 6b are divided into individual pieces by a method such as dicing or braking. Thereafter, the individual optical semiconductor devices are treated as normal electronic components such as being fixed to a mounting substrate by soldering or the like.
感熱部６は、製造方法と機能の観点によって好適な材料が選択される。感熱材料としては、常温において不透明であって、変色点以上になると不可逆的に透明となる物質を使用する。例えば、サリチリデンアニリン系化合物やフルオラン系化合物等である。ここで、変色点としては感熱部６を形成後に最も高温となる工程中の温度より、更に高い必要がある。例えば、個片化後にリフロー工程などを経て半田実装される場合、リフロー工程は２３０℃程度であることが通例である。従って、このような場合には、変色点が２３０℃より高い材料を使用するべきである。なぜなら、この環境下に曝されて不透明感熱部６ｂが透明化してはならないからである。一般的に言って、変色点としては感熱部６を形成後に最も高温となる工程中の温度より２０℃以上高ければ、工程中の温度管理をさほど厳密にしなくともすむため、より望ましい。なお、感熱材料の色は任意のものを選択できるが、光半導体素子として発光素子を採用した場合、その発光波長と一致する色である場合、発光色表示を兼ねると共に光取り出し効率向上にも資する。 A suitable material is selected for the heat sensitive part 6 according to the viewpoint of the manufacturing method and function. As the heat-sensitive material, a substance that is opaque at room temperature and becomes irreversibly transparent when the color change point is exceeded is used. Examples thereof include salicylidene aniline compounds and fluorane compounds. Here, the discoloration point needs to be higher than the temperature in the process that becomes the highest temperature after forming the heat sensitive portion 6. For example, when solder mounting is performed through a reflow process after singulation, the reflow process is typically about 230 ° C. Therefore, in such a case, a material having a color change point higher than 230 ° C. should be used. This is because the opaque heat-sensitive portion 6b should not be transparent when exposed to this environment. Generally speaking, the color change point is more preferably 20 ° C. or more than the temperature in the process that becomes the highest temperature after the formation of the heat sensitive portion 6, because temperature control in the process does not need to be so strict. The color of the heat-sensitive material can be selected, but when a light-emitting element is used as the optical semiconductor element, if the color matches the emission wavelength, it also serves as an emission color display and improves the light extraction efficiency. .
光半導体素子３は、好適には発光ダイオード素子又はフォトダイオード等の受光素子である。発光ダイオード素子の場合、不透明感熱部６ｂは反射部として作用し、封止樹脂５の側面方向へ放出されようとする光をその内側へ反射して戻し、透明感熱部６ａからより多くの光が放出されるようにする。一方、受光素子の場合、不透明感熱部６ｂは遮蔽部として作用し、封止樹脂５の側面方向から入射されようとする光を遮蔽して、透明感熱部６ａから光が入射されるようにする。 The optical semiconductor element 3 is preferably a light receiving element such as a light emitting diode element or a photodiode. In the case of a light-emitting diode element, the opaque heat-sensitive part 6b acts as a reflecting part, reflects light that is about to be emitted toward the side surface of the sealing resin 5 back to the inside, and more light is transmitted from the transparent heat-sensitive part 6a. To be released. On the other hand, in the case of the light receiving element, the opaque heat-sensitive part 6b acts as a shielding part, shields light that is about to enter from the side surface direction of the sealing resin 5, and allows light to enter from the transparent heat-sensitive part 6a. .
その他、配線基板１、配線パターン２、ワイヤ４、封止樹脂５などは従来から利用されてきたものと同様のため、説明を省略する。 In addition, since the wiring board 1, the wiring pattern 2, the wire 4, the sealing resin 5 and the like are the same as those conventionally used, the description thereof is omitted.
図５から図８は、本発明による第二の実施形態の光半導体装置の製造方法を示す図である。この装置は、受光素子７と、発光素子８とが一つのパッケージの中に遮光部９を隔てて存在する、いわゆる光センサである。まず、図５にあるように、配線パターン２が形成された配線基板１上に受光素子７と発光素子８とを配置する。受光素子７及び発光素子８は、導電性ペースト（図示せず）や、ワイヤ４などにより配線パターン２に電気的に接続される。その後、透明な封止樹脂５によって光半導体素子３、ワイヤ４が封止される。更に、受光素子７と発光素子８との間に遮光部９を設け、発光素子８からの光が、直接受光素子７側へ放射されないようにする。 5 to 8 are views showing a method of manufacturing an optical semiconductor device according to the second embodiment of the present invention. This device is a so-called optical sensor in which a light receiving element 7 and a light emitting element 8 are present in a single package with a light shielding portion 9 therebetween. First, as shown in FIG. 5, the light receiving element 7 and the light emitting element 8 are arranged on the wiring substrate 1 on which the wiring pattern 2 is formed. The light receiving element 7 and the light emitting element 8 are electrically connected to the wiring pattern 2 by a conductive paste (not shown), a wire 4 or the like. Thereafter, the optical semiconductor element 3 and the wire 4 are sealed with a transparent sealing resin 5. Further, a light shielding portion 9 is provided between the light receiving element 7 and the light emitting element 8 so that light from the light emitting element 8 is not directly emitted to the light receiving element 7 side.
次に、図６にあるように、不透明な感熱部６によって、封止樹脂５を被覆する。被覆後、加熱によって有機溶剤の気化と樹脂硬化を行い、感熱部６を封止樹脂５上に固定する。 Next, as shown in FIG. 6, the sealing resin 5 is covered with the opaque heat-sensitive part 6. After coating, the organic solvent is vaporized and the resin is cured by heating, and the heat sensitive part 6 is fixed on the sealing resin 5.
次に、図７にあるように、感熱部６のうち、受光素子７に該当する部分の上方を加熱し、透明感熱部６ａとする。この一部分のみ加熱するには、加熱した金属ブロックを感熱部６に押し付けるなどの方法を選択できるのは、第一の実施形態と同様である。なお、受光素子７に該当する部分の上方のみならず、発光素子８に該当する部分の上方をも加熱して透明感熱部６ａを形成してもよい。 Next, as shown in FIG. 7, the upper part of the heat sensitive part 6 corresponding to the light receiving element 7 is heated to form a transparent heat sensitive part 6a. In order to heat only this part, it is possible to select a method such as pressing a heated metal block against the heat sensitive part 6 as in the first embodiment. Note that the transparent heat-sensitive portion 6a may be formed by heating not only above the portion corresponding to the light receiving element 7 but also above the portion corresponding to the light emitting element 8.
最後に、図８にあるように、配線基板１と不透明感熱部６ｂをダイシング、ブレーキング等の方法によって分割し、個片化する。その後、各々に個片化された光センサ装置は、実装基板などに半田などによって固定される等の通常の電子部品として扱われる。 Finally, as shown in FIG. 8, the wiring board 1 and the opaque heat-sensitive portion 6b are divided into individual pieces by a method such as dicing or braking. Thereafter, the individual optical sensor devices are treated as ordinary electronic components such as being fixed to a mounting substrate by soldering or the like.
完成した光センサ装置の構成を、図９に示す。図９の左側の斜視図にあるとおり、受光素子７の上方に該当する部分のみ透明となっている。このため、図９の右側にあるとおり、受光素子７は、発光素子８から発して被検知物で反射した光を受けることができる。一方で、他の方向から入射しようとする迷光は不透明感熱部６ｂによって遮られ、受光素子７に入ることはない。従って、信号−雑音比（Ｓ／Ｎ比）を高めることができる。 FIG. 9 shows the configuration of the completed optical sensor device. As shown in the left perspective view of FIG. 9, only the portion corresponding to the upper side of the light receiving element 7 is transparent. Therefore, as shown on the right side of FIG. 9, the light receiving element 7 can receive light emitted from the light emitting element 8 and reflected by the object to be detected. On the other hand, stray light entering from other directions is blocked by the opaque heat sensitive part 6 b and does not enter the light receiving element 7. Therefore, the signal-noise ratio (S / N ratio) can be increased.
感熱部６は、第一の実施形態と同様、常温において不透明であって、変色点以上になると不可逆的に透明となる感熱材料を含む。また、配線基板１等については従来から利用されてきたものを採用できることも第一の実施形態と同様である。 As in the first embodiment, the heat-sensitive part 6 includes a heat-sensitive material that is opaque at room temperature and becomes irreversibly transparent when the color change point is reached. In addition, as with the first embodiment, the wiring board 1 and the like that have been conventionally used can be adopted.
１ 配線基板
２ 配線パターン
３ 光半導体素子
４ ワイヤ
５ 封止樹脂
６ 感熱部
６ａ 透明感熱部
６ｂ 不透明感熱部
７ 受光素子
８ 発光素子
９ 遮光部
DESCRIPTION OF SYMBOLS 1 Wiring board 2 Wiring pattern 3 Optical semiconductor element 4 Wire 5 Sealing resin 6 Heat sensitive part 6a Transparent heat sensitive part 6b Opaque heat sensitive part 7 Light receiving element 8 Light emitting element 9 Light shielding part
Claims (2)
前記配線基板上に配置された光半導体素子と、
前記光半導体素子を覆う封止樹脂と、
前記封止樹脂を覆う感熱部と、を有し、
前記感熱部は、前記光半導体素子からの光が出射するか、又は入射する部分は透明となっていて、かつ、それ以外の部分は不透明である、光半導体装置。 A wiring board;
An optical semiconductor element disposed on the wiring board;
A sealing resin covering the optical semiconductor element;
A heat-sensitive part covering the sealing resin,
The heat-sensitive part is an optical semiconductor device in which light from the optical semiconductor element is emitted or incident part is transparent and other parts are opaque.
前記光半導体素子を封止樹脂で覆う工程と、
前記封止樹脂を不透明な感熱部で覆う工程と、
前記感熱部の一部に熱を加え、その部分を透明にする工程と、
を有する光半導体装置の製造方法。 Arranging the optical semiconductor element on the wiring board;
Covering the optical semiconductor element with a sealing resin;
Covering the sealing resin with an opaque heat-sensitive part;
Applying heat to a part of the heat sensitive part to make the part transparent;
A method for manufacturing an optical semiconductor device comprising:
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| JP2011085924A JP5629630B2 (en) | 2011-04-08 | 2011-04-08 | Optical semiconductor device |
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| JP5629630B2 true JP5629630B2 (en) | 2014-11-26 |
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| JPH046056Y2 (en) * | 1986-12-22 | 1992-02-19 | ||
| JPH0321495A (en) * | 1989-06-19 | 1991-01-30 | Fuji Photo Film Co Ltd | Thermal recording material |
| JPH054443A (en) * | 1991-06-26 | 1993-01-14 | Kanzaki Paper Mfg Co Ltd | Thermal recording body and manufacture thereof |
| JPH0781242A (en) * | 1993-09-13 | 1995-03-28 | New Oji Paper Co Ltd | Heat-sensitive recording sheet and manufacture thereof |
| JP3306607B2 (en) * | 1994-03-25 | 2002-07-24 | パイロットインキ株式会社 | Thermochromic shading-translucent composition, laminate using the same, and internally concealed three-dimensional object using the laminate |
| JPH11220180A (en) * | 1998-01-30 | 1999-08-10 | Ricoh Co Ltd | Led array head |
| JP2000258911A (en) * | 1999-03-11 | 2000-09-22 | Hitachi Chem Co Ltd | Photosensitive colorable resin composition, photosensitive fluid for forming colored image, photosensitive element, production of colored image, production of panel for color filter and production of color filter |
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